A white light LED light source module with a high color gamut

Abstract

An embodiment of the present invention discloses a high-color gamut white LED light source module, which relates to the field of semiconductor lighting. The high-color gamut white LED light source module includes an LED chip and a light-emitting component; the mixed spectrum emitted by the LED chip is cyan light, and the peak wavelength range of the cyan light is 440-560 nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440-480 nm, and the peak wavelength range of the green light spectrum is 500-560 nm; the mixed spectrum emitted by the light-emitting component is red light or yellow-green light, and the peak wavelength range is 520-650 nm; the LED chip includes a first quantum well layer and a second quantum well layer, and the difference between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is greater than 60 nm; the first quantum well layer is electroluminescent, and the second quantum well layer is photoluminescent; the light-emitting component is photoluminescent. The high-color gamut white LED light source module has high color gamut, low cost, high reliability and high color stability at the same time.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor lighting, and particularly to a white LED light source module with a high color gamut. Background Art

[0002] The color gamut is an index to measure the ability of a display to truly reproduce colors. The wider the color gamut, the richer the color performance.

[0003] There are mainly two current technical routes: improving the color gamut through panel technology and backlight technology. And there are mainly the following three solutions for the technical route of improving the color gamut by backlight technology:

[0004] 1. Blue LED light source + quantum film, such as the invention patent "Quantum Dot Film" with the patent application number CN201480005245.1;

[0005] 2. White LED + quantum dot diffuser plate, such as the invention patent "A Quantum Dot Diffuser Plate and Its Preparation Method" with the patent application number CN202110840289.8;

[0006] 3. RGB Mini-LED as a backlight source, such as the invention patent "An RGB Mini-LED Field Sequential Backlight Control System and Method" with the patent application number CN202111382153.3.

[0007] The above three solutions cannot simultaneously take into account the core indicators such as high color gamut, low cost, high reliability, and color stability. Summary of the Invention

[0008] The technical problem to be solved by the embodiments of the present invention is the limitation of the display in color gamut performance, which cannot take into account high color gamut, low cost, high reliability, and color stability.

[0009] To solve the above problems, the embodiments of the present invention disclose a white LED light source module with a high color gamut. The white LED light source module with a high color gamut simultaneously has a white LED light source with high color gamut, low cost, high reliability, and high color stability.

[0010] The present invention provides a white LED light source module with a high color gamut. The white LED light source module with a high color gamut includes an LED chip and a light-emitting component. The mixed spectrum emitted by the LED chip is cyan light, and the peak wavelength range of the cyan light is 440 - 560 nm. The cyan light spectrum includes a blue light spectrum and a green light spectrum. The peak wavelength range of the blue light spectrum is 440 - 480 nm, and the peak wavelength range of the green light spectrum is 500 - 560 nm. The mixed spectrum emitted by the light-emitting component is red light or yellow-green light, and the peak wavelength range is 520 - 650 nm. The LED chip includes a first quantum well layer and a second quantum well layer. The difference between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is greater than 60 nm. The first quantum well layer is electroluminescent, and the second quantum well layer is photoluminescent. The light-emitting component is photoluminescent.

[0011] A further technical solution thereof is that the range of the CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED chip is 0.1 - 0.2, and the range of the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED chip is 0.15 - 0.3.

[0012] A further technical solution thereof is that the spectrum emitted by the first quantum well layer is blue light, the peak wavelength range is 400 nm - 480 nm, the wavelength half-width within the spectrum range is equal to or less than 40 nm, the range of the CIE-1931 chromaticity coordinate X value is 0.1 - 0.2, and the range of the CIE-1931 chromaticity coordinate Y value is 0.01 - 0.15.

[0013] A further technical solution thereof is that the spectrum emitted by the second quantum well layer is green light, the peak wavelength range is 500 nm - 560 nm, the wavelength half-width within the spectrum range is equal to or less than 40 nm, the range of the CIE-1931 chromaticity coordinate X value is 0.15 - 0.3, and the range of the CIE-1931 chromaticity coordinate Y value is 0.6 - 0.8.

[0014] A further technical solution thereof is that the light-emitting component includes a red powder and a transparent binder. The red powder is photoluminescent, and the refractive index range of the transparent binder is 1.3 - 1.8. The peak red light emission intensity of the red powder is greater than or equal to the peak green light emission intensity of the LED chip.

[0015] A further technical solution thereof is that the peak wavelength range of the red powder is 600 nm - 660 nm, and the wavelength half-width within the spectrum range is equal to or less than 70 nm.

[0016] A further technical solution thereof is that the light-emitting component further includes a green powder, and the green powder is photoluminescent.

[0017] A further technical solution is that the peak wavelength range of the green powder is 500 nm - 560 nm, and the wavelength half-width within the spectral range is equal to or less than 70 nm.

[0018] A further technical solution is that the light-emitting component is above the first quantum well layer, the second quantum well layer is below the first quantum well layer, and the peak of the light-emitting intensity of the first quantum well layer is greater than that of the second quantum well layer.

[0019] Compared with the prior art, the technical effects that can be achieved by the embodiments of the present invention include:

[0020] The light-emitting layer of the high-color gamut white LED light source module only needs two quantum well layers, with low cost; only one quantum well layer emits light electro-optically, with high reliability. Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0022] Figure 1 It is a schematic structural diagram of a high-color gamut LED light source module provided by the present application;

[0023] Figure 2 It is a schematic structural diagram of an LED chip provided by the present application.

[0024] Reference Signs

[0025] 1. LED chip; 2. Light-emitting component;

[0026] 11. First quantum well layer; 12. Second quantum well layer;

[0027] 21. Red powder; 22. Green powder. Detailed Embodiments

[0028] The technical solutions in the embodiments will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Similar component numbers in the drawings represent similar components. Obviously, the embodiments described below are only some embodiments of the present invention, not all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0029] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0030] It should also be understood that the terms used in the specification of the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present invention. As used in the specification of the embodiments of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.

[0031] To facilitate understanding of the technical solutions provided in this application, the research background of the technical solutions of this application will be briefly described below. The LED wafer 1 includes a substrate (also known as the bottom layer, substrate), an n-type semiconductor layer, an active layer (also known as the light-emitting layer), and a p-type semiconductor layer. The optical primary colors (RGB): red, green, and blue. After mixing the optical primary colors, they form the display colors of the display screen. When the three primary colors are added together simultaneously, it is white, and white belongs to one of the achromatic colors (black, white, and gray).

[0032] See Figure 1-2 , the embodiments of the present invention provide a high-color gamut white LED light source module. The high-color gamut white LED light source module includes an LED wafer 1 and a light-emitting component 2; the mixed spectrum emitted by the LED wafer 1 is cyan light, and the range of the peak wavelength of the cyan light is 440-560 nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, the range of the peak wavelength of the blue light spectrum is 440-480 nm, and the range of the peak wavelength of the green light spectrum is 500-560 nm; the mixed spectrum emitted by the light-emitting component 2 is red light or yellow-green light, and the range of the peak wavelength is 520-650 nm; the LED wafer 1 includes a first quantum well layer 11 and a second quantum well layer 12, and the difference between the peak wavelength of the first quantum well layer 11 and the peak wavelength of the second quantum well layer 12 is greater than 60 nm; the first quantum well layer 11 is electroluminescent, and the second quantum well layer 12 is photoluminescent; the light-emitting component 2 is photoluminescent. The specific introduction of each component is as follows:

[0033] In this embodiment, the first quantum well layer 11 and the second quantum well layer 12 both belong to the active layer of the LED wafer 1. The first quantum well layer 11 and the second quantum well layer 12 are stacked. The first quantum well layer 11 is above the second quantum well layer 12, or the first quantum well layer 11 is below the second quantum well layer 12. Understandably, the order or the up-and-down position of the first quantum well layer 11 and the second quantum well layer 12 is not limited. The structure of the LED wafer 1 includes a direct structure, an inverted structure, a vertical structure, and other structures extended based on the above structures, such as a thin film wafer. The side length of the LED ranges between 5 and 3000 microns. The LED wafer 1 does not require phosphor excitation and can emit two-color spectra after being powered on, and the obtained mixed light is cyan light. Among them, the first color is blue light, and the second color is green light. The light-emitting component 2 is excited by the light emitted by the LED wafer 1 and then emits red light, thereby obtaining white light mixed with blue light, green light, and red light.

[0034] In one embodiment, the peak wavelength range of the blue light spectrum of the LED wafer 1 is 440 - 480 nm, the peak wavelength range of the green light spectrum of the LED wafer 1 is 500 - 560 nm, and the blue light spectrum and the green light spectrum of the LED wafer 1 are combined to obtain a cyan light spectrum. The peak wavelength range of the cyan light spectrum is 440 - 560 nm. The peak wavelength of the blue light spectrum is separated from the peak wavelength of the green light spectrum by more than 60 nm. Blue light and green light are mixed to obtain cyan light. The first quantum well layer 11 includes a nitride semiconductor represented by the chemical formula In i Ga j Al k N, where 0 ≤ i, 0 ≤ j, 0 ≤ k, and i + j + k = 1. The second quantum well layer 12 of the LED wafer 1 is a compound semiconductor composed of a nitride or a phosphide.

[0035] The technical effects that can be achieved by the embodiments of the present invention include:

[0036] The light-emitting layer of the high-color gamut white LED light source module only needs two quantum well layers, and the cost is low; only one quantum well layer emits light electro-optically, there is no obvious color drift phenomenon, and the color consistency is high.

[0037] Continue to refer to Figure 1-2 , in this embodiment, the range of the CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED wafer 1 is 0.1 - 0.2, and the range of the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED wafer 1 is 0.15 - 0.3.

[0038] In this embodiment, the emission spectrum of the LED wafer 1 is cyan light, and the selected range of the CIE-1931 chromaticity coordinate X value is 0.13 - 0.18, and the CIE-1931 chromaticity coordinate Y value is 0.15 - 0.25.

[0039] Further, the spectrum emitted by the first quantum well layer 11 is blue light, the peak wavelength ranges from 400 nm to 480 nm, the wavelength half-width within the spectrum range is equal to or less than 40 nm, the range of the CIE-1931 chromaticity coordinate X value is 0.1 - 0.2, and the range of the CIE-1931 chromaticity coordinate Y value is 0.01 - 0.15.

[0040] Further, the spectrum emitted by the second quantum well layer 12 is green light, the peak wavelength ranges from 500 nm to 560 nm, the wavelength half-width within the spectrum range is equal to or less than 40 nm, the range of the CIE-1931 chromaticity coordinate X value is 0.15 - 0.3, and the range of the CIE-1931 chromaticity coordinate Y value is 0.6 - 0.8.

[0041] Further, the light-emitting component 2 includes a red powder 21 and a transparent adhesive. The red powder 21 is photoluminescent, and the refractive index of the transparent adhesive ranges from 1.3 to 1.8; the peak red light emission intensity of the red powder 21 is greater than or equal to the peak green light emission intensity of the LED wafer 1.

[0042] Specifically, the red powder 21 includes one or more of a red quantum dot phosphor and a red base powder. The red powder 21 is excited by an LED light source, and the peak wavelength of the emission after excitation is between 600 - 660 nm; the half-width wavelength of its emission spectrum does not exceed 70 nm. The transparent adhesive includes, but is not limited to, silicone rubber (based on siloxane polymer), resin adhesives (such as acrylic resin, polyurethane resin, etc.), epoxy adhesives (based on epoxy resin system), and the refractive index of the transparent adhesive ranges from 1.3 to 1.8.

[0043] In this embodiment, the light-emitting component 2 is formed by uniformly mixing the red powder 21 and the transparent adhesive. The peak red light emission intensity excited by the red powder 21 is denoted as E 红 , and the peak green light emission intensity of the LED wafer 1 is denoted as E 绿 . Understandably, E 红 ≥E 绿 .

[0044] The red base powder includes, but is not limited to, nitride phosphors (BaSi2O2N2, α-Sialon, β-Sialon, Sr2Si5N8, CaAlSiN3), fluoride phosphors (K2SiF6:Mn 4+ , K2GeF6:Mn 4+ , K2TiF6:Mn 4+ ). The red base powder is composed of one or more of the above materials, the particle diameter ranges from 1 to 50 microns, is photoluminescent, and is excited by an LED light source, and the peak wavelength of the emission after excitation is between 600 - 660 nm.

[0045] The red quantum dot phosphor includes, but is not limited to, cadmium selenide (CdSe), indium phosphide (InP), and perovskite (ABX3). The red quantum dot phosphor is composed of one or more of the above materials, with a particle diameter range of 10 - 30 nanometers, being photoluminescent, excited by an LED light source, having an emission peak wavelength after excitation between 600 - 660 nm, and the half-width wavelength of its emission spectrum not exceeding 50 nm.

[0046] Further, the peak wavelength of the red powder 21 ranges from 600 nm to 660 nm, and the half-wave width of the wavelength within the spectral range is equal to or less than 70 nm.

[0047] Specifically, the red powder 21 is excited by an LED light source, and the emission peak wavelength after excitation is between 600 - 660 nm; the half-width wavelength of its emission spectrum does not exceed 70 nm. In one embodiment, the peak value of the red light emission intensity of the red powder 21 is greater than or equal to the peak value of the green light emission intensity of the LED wafer 1.

[0048] Further, the light-emitting member 2 further includes a green powder 22, and the green powder 22 is photoluminescent.

[0049] Specifically, the green powder 22 includes one or more of a green base powder and a green quantum dot phosphor. The green powder 22 is excited by an LED light source, and the emission peak wavelength after excitation is between 500 - 560 nm; the half-width wavelength of its emission spectrum does not exceed 70 nm.

[0050] In this embodiment, the peak value of the red light emission intensity of the red powder 21 is greater than or equal to the sum of the peak values of the green light emission intensities of the LED wafer 1 and the green powder 22; the sum of the peak values of the green light emission intensities of the LED wafer 1 and the green powder 22 is less than or equal to the peak value of the blue light emission intensity of the LED wafer 1. The light-emitting member 2 is formed by uniformly mixing the red powder 21, the green powder 22, and a transparent adhesive, enabling the light-emitting member 2 to emit yellow-green light. The peak value of the red light emission intensity of the red powder 21 is denoted as E 红 , the sum of the peak values of the green light emission intensities of the LED wafer 1 and the green powder 22 is denoted as E 绿总 , the peak value of the blue light emission intensity of the LED wafer 1 is denoted as E 蓝 , understandably, E 红 ≥E 绿总 , E 蓝 ≥E 绿总 .

[0051] The green base powder includes, but is not limited to, sialon ceramic phosphor (β-SiAlON), silicate phosphor (Ba2SiO4, Sr3SiO5), aluminate phosphor (YAG, (Gd, Y)AG, (Lu, Y)AG). The green base powder is composed of one or more of the above materials, with a particle diameter of 1-50 microns, and is photoluminescent. It is excited by an LED light source, and the emission peak wavelength after excitation is between 500-560 nm.

[0052] Further, the peak wavelength of the green powder 22 ranges from 500 nm to 560 nm, and the wavelength half-width within the spectral range is equal to or less than 70 nm.

[0053] Specifically, the green powder 22 is excited by the light emitted from the LED chip 1, and the emission peak wavelength after excitation is between 500-560 nm; the half-width wavelength of its emission spectrum does not exceed 70 nm.

[0054] Further, the light-emitting element 2 is above the first quantum well layer 11, and the second quantum well layer 12 is below the first quantum well layer 11.

[0055] In this embodiment, the peak value of the blue light emission intensity emitted by the first quantum well layer 11 is 2-5 times that of the green light emission intensity peak emitted by the second quantum well layer 12. The light-emitting element 2 is above the first quantum well layer 11, and the second quantum well layer 12 is below the first quantum well layer 11. Both the light-emitting element 2 and the second quantum well layer 12 are photoluminescent. By arranging the first quantum well layer 11 with a stronger peak emission intensity between the light-emitting element 2 and the second quantum well layer 12 with a weaker peak emission intensity, the first quantum well layer 11 can effectively excite the light-emitting element 2 and the second quantum well layer 12 to emit light respectively.

[0056] In the above embodiments, the descriptions of each embodiment have their own emphases. For parts not detailed in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0057] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0058] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0059] In the present invention, unless otherwise clearly specified and defined, terms such as "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0060] In the present invention, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely means that the horizontal height of the first feature is lower than that of the second feature.

[0061] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification.

[0062] Obviously, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

[0063] As described above, the specific embodiments of the present invention are provided. However, the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A white light LED light source module with a high color gamut, characterized in that, It includes an LED chip and a light-emitting component; The mixed spectrum emitted by the LED chip is cyan light, and the peak wavelength range of the cyan light is 440 - 560 nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440 - 480 nm, and the peak wavelength range of the green light spectrum is 500 - 560 nm; The mixed spectrum emitted by the light-emitting component is red light or yellow-green light, and the peak wavelength range is 520 - 650 nm; The LED chip includes a first quantum well layer and a second quantum well layer, and the difference between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is greater than 60 nm; The first quantum well layer is electroluminescent, and the second quantum well layer is photoluminescent; the light-emitting component is photoluminescent; The light-emitting component is above the first quantum well layer, and the second quantum well layer is below the first quantum well layer. The peak luminous intensity of the first quantum well layer is greater than the peak luminous intensity of the second quantum well layer; The peak red light luminous intensity of the light-emitting component is greater than or equal to the sum of the peak green light luminous intensities of the light-emitting component and the second quantum well layer.

2. The white light LED light source module with a high color gamut according to claim 1, wherein The CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED chip ranges from 0.1 to 0.2, and the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED chip ranges from 0.15 to 0.

3.

3. The white light LED light source module with a high color gamut according to claim 2, characterized in that, The spectrum emitted by the first quantum well layer is blue light, the peak wavelength range is 400 nm - 480 nm, the wavelength half-width within the spectrum range is equal to or less than 40 nm, the CIE-1931 chromaticity coordinate X value ranges from 0.1 to 0.2, and the CIE-1931 chromaticity coordinate Y value ranges from 0.01 to 0.

15.

4. The white light LED light source module with a high color gamut according to claim 2, characterized in that, The spectrum emitted by the second quantum well layer is green light, the peak wavelength range is 500 nm - 560 nm, the wavelength half-width within the spectrum range is equal to or less than 40 nm, the CIE-1931 chromaticity coordinate X value ranges from 0.15 to 0.3, and the CIE-1931 chromaticity coordinate Y value ranges from 0.6 to 0.

8.

5. The white light LED light source module with a high color gamut according to claim 2, characterized in that, The light-emitting component includes a red powder and a transparent binder. The red powder is photoluminescent, and the refractive index range of the transparent binder is 1.3 - 1.

8.

6. The white light LED light source module with a high color gamut according to claim 5, wherein, The peak wavelength range of the red powder is 600 nm - 660 nm, and the wavelength half-width within the spectrum range is equal to or less than 70 nm.

7. The white light LED light source module with a high color gamut according to claim 5, characterized in that, The light-emitting component further includes a green powder, and the green powder is photoluminescent.

8. The white light LED light source module with a high color gamut according to claim 7, characterized in that, The peak wavelength range of the green powder is 500 nm - 560 nm, and the wavelength half-width within the spectrum range is equal to or less than 70 nm.

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