Light-emitting element

Abstract

A light-emitting element comprises a first type semiconductor layer, a second type semiconductor layer, an active layer, an intrinsic semiconductor layer, a first electrode and a second electrode. The second type semiconductor layer is arranged opposite to the first type semiconductor layer; the active layer is arranged between the first type semiconductor layer and the second type semiconductor layer; the intrinsic semiconductor layer is provided with a plurality of microstructures, and the second type semiconductor layer is arranged between the intrinsic semiconductor layer and the active layer; the first electrode and the second electrode are respectively arranged on two opposite sides of the active layer, and the second electrode is arranged in the through hole of the intrinsic semiconductor layer and the recess of the second type semiconductor layer.

Description

Technical Field

[0001] The present invention relates to a semiconductor element, and in particular to a light emitting element. Background Art

[0002] The light-emitting diode display panel includes an active component substrate and a plurality of light-emitting diode components transferred to the active component substrate. Inheriting the characteristics of light-emitting diodes, the light-emitting diode display panel has the advantages of power saving, high efficiency, high brightness and fast response time. In addition, compared with the organic light-emitting diode display panel, the light-emitting diode display panel also has the advantages of easy color adjustment, long luminous life and no image imprinting. Therefore, the light-emitting diode display panel is regarded as the next generation of display technology. The light-emitting diode element includes a vertical light-emitting diode element. Generally speaking, the upper electrode of the vertical light-emitting diode element is an opaque metal and is arranged in the center of the vertical light-emitting diode element, which is not conducive to the forward light emission. Summary of the invention

[0003] The invention provides a light-emitting element with good performance.

[0004] The light-emitting element of the present invention comprises a first-type semiconductor layer, a second-type semiconductor layer, an active layer, an intrinsic semiconductor layer, a first electrode and a second electrode; the second-type semiconductor layer is arranged opposite to the first-type semiconductor layer; the active layer is arranged between the first-type semiconductor layer and the second-type semiconductor layer; the intrinsic semiconductor layer has a plurality of microstructures, the second-type semiconductor layer is arranged between the intrinsic semiconductor layer and the active layer; the first electrode and the second electrode are arranged on opposite sides of the active layer, and are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. The intrinsic semiconductor layer has a through hole, the second-type semiconductor layer has a recess, the through hole of the intrinsic semiconductor layer is connected to the recess of the second-type semiconductor layer, and the second electrode is arranged in the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer.

[0005] In one embodiment of the light-emitting element of the present invention, the second electrode has a first part and a second part connected to the first part, the first part of the second electrode is arranged in the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer, the second part of the second electrode is located outside the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer and is arranged on the multiple microstructures of the intrinsic semiconductor layer, and the first electrode is light-transmissive.

[0006] In one embodiment of the light emitting element of the present invention, a first direction and a second direction are staggered and substantially parallel to the active layer, the through hole of the intrinsic semiconductor layer has a first side length and a second side length in the first direction and the second direction respectively, and the first side length is smaller than the second side length.

[0007] In one embodiment of the light emitting device of the present invention, a semiconductor structure includes the first-type semiconductor layer, the second-type semiconductor layer and the active layer, the semiconductor structure has a plurality of first sidewalls arranged in the first direction and a plurality of second sidewalls arranged in the second direction, and the light emitting device further includes:

[0008] A reflective structure is disposed on the second side walls and is not disposed on the first side walls.

[0009] In an embodiment of the light emitting device of the present invention, a semiconductor structure includes the first-type semiconductor layer, the second-type semiconductor layer and the active layer, and the through hole of the intrinsic semiconductor layer deviates from a geometric center of the semiconductor structure.

[0010] In an embodiment of the light emitting element of the present invention, the second electrode is made of metal.

[0011] In an embodiment of the light emitting element of the present invention, the second electrode is tapered.

[0012] In an embodiment of the light emitting element of the present invention, the intrinsic semiconductor layer has a thickness of T, a sum of a depth of the recess and the through hole is D, and D falls within a range of T+0.2 μm to T+1.5 μm.

[0013] In one embodiment of the light emitting device of the present invention, a side wall of the intrinsic semiconductor layer defining the through hole is substantially flush with a side wall of the second-type semiconductor layer defining the recess.

[0014] In an embodiment of the light emitting element of the present invention, in a top view of the light emitting element, the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer substantially overlap. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to an embodiment of the present invention.

[0016] Figure 2 FIG. 1 is a schematic top view of a light emitting element according to an embodiment of the present invention.

[0017] Figure 3 is a schematic cross-sectional view of a light emitting element of a comparative example.

[0018] Figure 4 Show Figure 3 A light emitting element of a comparative example and Figure 1 The light intensity distribution of the light emitting element of the embodiment is at each tilt angle in a direction parallel to the first direction or in a direction parallel to the second direction.

[0019] Figure 5 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention.

[0020] Figure 6 is a schematic cross-sectional view of a light emitting element of another comparative example.

[0021] Figure 7 FIG. 4 is a schematic top view of a light emitting element according to another embodiment of the present invention.

[0022] Figure 8 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention.

[0023] Fig. 9 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention.

[0024] Fig.10 Show Figures 7 to 9 The light intensity distribution of the light emitting element of the embodiment is at various tilt angles in an orientation parallel to the first direction and in an orientation parallel to the second direction.

[0025] Fig.11 FIG. 4 is a schematic top view of a light emitting element according to another embodiment of the present invention.

[0026] Fig.12 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention.

[0027] Fig.13 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention.

[0028] Fig.14 It is a top view or bottom view of a light emitting element according to an embodiment of the present invention.

[0029] Fig.15 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention.

[0030] Fig.16 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention.

[0031] Fig.17 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention.

[0032] Fig.18 It is a top view or bottom view of a light emitting element according to an embodiment of the present invention.

[0033] Fig.19 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention.

[0034] Fig. 20 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention.

[0035] Wherein, the reference numerals are:

[0036] 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I, 100J, 100', 100": Light emitting element

[0037] 110: first type semiconductor layer

[0038] 120: Second type semiconductor layer

[0039] 120a: Depression

[0040] 120s, 140s: Sidewall

[0041] 130: Active layer

[0042] 140: Intrinsic semiconductor layer

[0043] 140a, 140aB: through hole

[0044] 142: Microstructure

[0045] 150, 150A: first electrode

[0046] 160, 160A, 160B, 160D, 160E, 160F, 160G, 160', 160": second electrode

[0047] 161: Part 1

[0048] 162: Part 2

[0049] 170: Insulation layer

[0050] 180: The third electrode

[0051] 190B: Reflective structure

[0052] D: Depth and

[0053] d1: first direction

[0054] d2: second direction

[0055] S, SD, SH, SI, SJ: semiconductor structure

[0056] Sa: First side wall

[0057] Sb: Second side wall

[0058] Sc: Geometric center

[0059] T:Thickness

[0060] W140a: Width

[0061] W140aB-1, W160B-1: first side length W140aB-2, W160B-2: second side length I-I', II-II', III-III', IV-IV', V-V': line segment DETAILED DESCRIPTION

[0062] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0063] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connection" may refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other elements between two elements.

[0064] As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable deviation range of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property or other property, and can apply to all properties without a single standard deviation.

[0065] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless explicitly defined as such herein.

[0066] Figure 1 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to an embodiment of the present invention. Figure 2 FIG. 4 is a schematic top view of a light emitting element according to an embodiment of the present invention. Figure 1 correspond Figure 2 The line segment I-I'.

[0067] Please refer to Figure 1 and Figure 2, the light emitting element 100 includes a first-type semiconductor layer 110, a second-type semiconductor layer 120, an active layer 130, an intrinsic semiconductor layer 140, a first electrode 150 and a second electrode 160. The second-type semiconductor layer 120 is disposed opposite to the first-type semiconductor layer 110. The active layer 130 is disposed between the first-type semiconductor layer 110 and the second-type semiconductor layer 120. The intrinsic semiconductor layer 140 has a plurality of microstructures 142. The plurality of microstructures 142 are used to increase light extraction efficiency. The second-type semiconductor layer 120 is disposed between the intrinsic semiconductor layer 140 and the active layer 130. In some embodiments, the first-type semiconductor layer 110 may be a p-type semiconductor layer, the second-type semiconductor layer 120 may be an n-type semiconductor layer, and the active layer 130 may be a multiple quantum well structure. For example, in some embodiments, the first-type semiconductor layer 110 may be p-type gallium nitride, and the second-type semiconductor layer 120 may be n-type gallium nitride, but the present invention is not limited thereto. In some embodiments, the intrinsic semiconductor layer 140 contacts the second-type semiconductor layer 120. The intrinsic semiconductor layer 140 is an undoped semiconductor layer. For example, in some embodiments, the intrinsic semiconductor layer 140 may be undoped gallium nitride, but the present invention is not limited thereto.

[0068] The first electrode 150 and the second electrode 160 are respectively disposed on opposite sides of the active layer 130, and are electrically connected to the first type semiconductor layer 110 and the second type semiconductor layer 120. The first type semiconductor layer 110 is disposed between the active layer 130 and the first electrode 150. The second type semiconductor layer 120 is disposed between the second electrode 160 and the active layer 130. The intrinsic semiconductor layer 140 is disposed between the second electrode 160 and the second type semiconductor layer 120. In some embodiments, the first electrode 150 contacts the first type semiconductor layer 110. In some embodiments, the second electrode 160 contacts the intrinsic semiconductor layer 140 and the second type semiconductor layer 120. In some embodiments, the material of the first electrode 150 may include metal (e.g., gold), and the material of the second electrode 160 may include metal (e.g., aluminum), but the present invention is not limited thereto.

[0069] The semiconductor structure S includes a first-type semiconductor layer 110, a second-type semiconductor layer 120, and an active layer 130. The first direction d1 and the second direction d2 are interlaced and substantially parallel to the active layer 130. The semiconductor structure S has a plurality of first sidewalls Sa arranged in the first direction d1 and a plurality of second sidewalls Sb arranged in the second direction d2. In some embodiments, the light-emitting element 100 further includes an insulating layer 170 disposed on the plurality of first sidewalls Sa and the plurality of second sidewalls Sb of the semiconductor structure S. In some embodiments, the material of the insulating layer 170 is, for example, silicon oxide, but the present invention is not limited thereto.

[0070] It is worth noting that the intrinsic semiconductor layer 140 has a through hole 140a, the second-type semiconductor layer 120 has a recess 120a, the through hole 140a of the intrinsic semiconductor layer 140 is connected to the recess 120a of the second-type semiconductor layer 120, and at least a portion of the second electrode 160 is disposed in the through hole 140a of the intrinsic semiconductor layer 140 and the recess 120a of the second-type semiconductor layer 120. In some embodiments, the through hole 140a of the intrinsic semiconductor layer 140 and the recess 120a of the second-type semiconductor layer 120 may form a conical recess. In some embodiments, the second electrode 160 is disposed in the conical recess and may be conical. In some embodiments, during the manufacturing process of the light emitting device 100, the through hole 140a of the intrinsic semiconductor layer 140 and the recess 120a of the second-type semiconductor layer 120 are formed in the same etching process, so the sidewall 140s of the intrinsic semiconductor layer 140 defining the through hole 140a and the sidewall 120s of the second-type semiconductor layer 120 defining the recess 120a can be substantially aligned. In other words, in the top view of the light emitting device 100, the through hole 140a of the intrinsic semiconductor layer 140 and the recess 120a of the second-type semiconductor layer 120 substantially overlap.

[0071] In some embodiments, the intrinsic semiconductor layer 140 has a thickness T, and the depth D of the recess 120a and the through hole 140a may fall within the range of "the thickness T of the intrinsic semiconductor layer 140 + 0.2 μm" to "the thickness T of the intrinsic semiconductor layer 140 + 1.5 μm". In some embodiments, the thickness T of the intrinsic semiconductor layer 140, for example, falls within the range of 2 μm to 6 μm, but the present invention is not limited thereto. In some embodiments, the width W of the through hole 140a of the intrinsic semiconductor layer 140 is 140a The thickness may be in the range of 0.1 μm to 4 μm, but the present invention is not limited thereto.

[0072] It is worth mentioning that the through hole 140a of the intrinsic semiconductor layer 140 and the depression 120a of the second-type semiconductor layer 120 form a conical depression. The second electrode 160 is formed in the conical depression, and local ohmic contact can be performed without excessively damaging the microstructure 142. At the same time, the second electrode 160 disposed in the conical depression also has a mechanism for recycling light beams, and has little effect on blocking the emission of light beams. In addition, the vertical projection area of ​​the contact range between the second electrode 160 disposed in the conical depression and the second-type semiconductor layer 120 is small, so that the second electrode 160 is more effective in limiting current to avoid non-radiative recombination of the sidewalls. Thereby, the light extraction efficiency and forward light intensity of the light-emitting element 100 can be significantly improved. With the following combination Figure 3 , Figure 4 Table 1 gives an example to illustrate this.

[0073] Figure 3is a schematic cross-sectional view of a light emitting element of a comparative example. Figure 3 The light emitting element 100 ′ of the comparative example and Figure 1 The light emitting element 100 of the embodiment is similar to that of the embodiment, and the difference between the two is that: Figure 3 The light emitting element 100' of the comparative example does not include Figure 1 An intrinsic semiconductor layer 140 having a plurality of microstructures 142; Figure 3 The second electrode 160' of the comparative example is formed on the surface of the second-type semiconductor layer 120 instead of being formed on the Figure 1 The through hole 140 a of the intrinsic semiconductor layer 140 and the recess 120 a of the second-type semiconductor layer 120 are formed.

[0074] Please refer to Figure 1 and Figure 3 , Figure 4 Show Figure 3 The light emitting element 100 ′ of the comparative example and Figure 1 The light intensity distribution of the light emitting element 100 of the embodiment at various tilt angles in a direction parallel to the first direction d1 or in a direction parallel to the second direction d2 is shown in Table 1. Figure 3 The light emitting element 100 ′ of the comparative example and Figure 1 The light extraction efficiency and relative forward light intensity of the light emitting element 100 of the embodiment.

[0075]

[0076] [Table 1]

[0077] Please refer to Figure 1 , Figure 3 , Figure 4 And Table 1, by Figure 4 As can be seen from the data in Table 1, compared with the light emitting element 100 ′ of the comparative example, the light extraction efficiency and the forward light intensity of the light emitting element 100 of the embodiment are significantly improved.

[0078] It must be noted that the following embodiments use the component numbers and some contents of the previous embodiments, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can refer to the previous embodiments, and the following embodiments will not be repeated.

[0079] Figure 5 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention. Figure 5 The light emitting element 100A and Figure 1 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , and the main difference between the two is that: Figure 1 In the embodiment of , the second semiconductor layer 120 is on the top and the first semiconductor layer 110 is on the bottom; Figure 5In the embodiment of the present invention, the first semiconductor layer 110 is on the upper side and the second semiconductor layer 120 is below the lower side.

[0080] In addition, Figure 5 In the embodiment, the second electrode 160A has a first portion 161 and a second portion 162 connected to the first portion 161, the first portion 161 of the second electrode 160A is disposed in the through hole 140a of the intrinsic semiconductor layer 140 and the recess 120a of the second-type semiconductor layer 120, the second portion 162 of the second electrode 160A is located outside the through hole 140a of the intrinsic semiconductor layer 140 and the recess 120a of the second-type semiconductor layer 120 and is disposed on the plurality of microstructures 142 of the intrinsic semiconductor layer 140, and the first electrode 150A is light-transmissive. For example, in some embodiments, the material of the first electrode 150A may be indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides, or a stacked layer of at least two of the above, but the present invention is not limited thereto.

[0081] Furthermore, Figure 5 In the embodiment of the present invention, the light emitting element 100A may further selectively include a third electrode 180 disposed on the second electrode 160A. The third electrode 180 is directly connected to the second electrode 160A, and the combination of the third electrode 180 and the second electrode 160A may be regarded as a lower electrode of the light emitting element 100A. In some embodiments, the material of the third electrode 180 is, for example, gold, but the present invention is not limited thereto.

[0082] Figure 6 is a schematic cross-sectional view of a light emitting element of another comparative example. Figure 6 The light emitting element 100 of the comparative example is Figure 5 The light emitting element 100A of the embodiment is similar to the light emitting element 100A of the embodiment, and the difference between the two is that: Figure 6 The light emitting element 100 of the comparative example does not include Figure 5 An intrinsic semiconductor layer 140 having a plurality of microstructures 142; Figure 6 The second electrode 160" of the comparative example is formed on the surface of the second-type semiconductor layer 120 instead of being formed on Figure 6 The through hole 140 a of the intrinsic semiconductor layer 140 and the recess 120 a of the second-type semiconductor layer 120 are formed.

[0083] Table 2 lists Figure 6 The light emitting element 100 of the comparative example and Figure 5 Light extraction efficiency and relative forward light intensity of the light emitting element 100A of the embodiment.

[0084]

[0085]

[0086] [Table 2]

[0087] Please refer to Figure 5 , Figure 6 As shown in Table 2, it can be seen from the data in Table 2 that, compared with the light-emitting element 100" of the comparative example, the light extraction efficiency and the forward light intensity of the light-emitting element 100A of the embodiment are slightly improved.

[0088] Figure 7 FIG. 4 is a schematic top view of a light emitting element according to another embodiment of the present invention. Figure 8 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention. Fig. 9 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention. Figure 8 correspond Figure 7 The line segment II-II'. Fig. 9 correspond Figure 7 The line segment III-III'.

[0089] Figures 7 to 9 The light emitting element 100B and Figure 1 to Figure 2 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , and the main difference between the two is: Figures 7 to 9 The second electrode 160B of the light emitting element 100B is connected to Figure 1 to Figure 2 The second electrode 160 of the light-emitting element 100 is different.

[0090] Please refer to Figure 7 , Figure 8 and Fig. 9 Specifically, in this embodiment, the second electrode 160B has a first side length W in the first direction d1 and the second direction d2. 160B-1 and the second side length W 160B-2 , and the first side length is W 160B-1 Less than the second side length W 160B-2 In this embodiment, the through hole 140aB of the intrinsic semiconductor layer 140 has a first side length W in the first direction d1 and the second direction d2. 140aB-1 and the second side length W 140aB-2 , and the first side length is W 140aB-1 Less than the second side length W 140aB-2 .

[0091] In addition, in the present embodiment, the light emitting element 100B further includes a reflective structure 190B, which is disposed on a plurality of second side walls Sb of the semiconductor structure S, and is not disposed on a plurality of first side walls Sb of the semiconductor structure S. However, the present invention is not limited thereto, and in other embodiments not shown, the reflective structure 190B may also be disposed on the entire side wall of the semiconductor structure S. In the present embodiment, the reflective structure 190B is, for example, a single-layer structure, and the material of the reflective structure 190B is, for example, metal. However, the present invention is not limited thereto, and in other embodiments not shown, the reflective structure 190B may also be a distributed Bragg reflector (DBR) including a multi-layer structure.

[0092] Fig.10 Show Figures 7 to 9 The light intensity distribution of the light emitting element 100B of the embodiment of FIG. 1 at each tilt angle in the direction parallel to the first direction d1 and in the direction parallel to the second direction d2. Figures 7 to 10 In this embodiment, the light field shape of the light emitting element 100B in the direction parallel to the second direction d2 (ie, in the vertical viewing direction) can be narrowed by the long second electrode 160B. Figure 7 In the present embodiment, the second electrode 160B and the through hole 140aB may be selectively located on the geometric center Sc of the semiconductor structure S, and the light field shape of the light emitting element 100B in the direction parallel to the first direction d1 (i.e., the left and right viewing directions) may be symmetrical, but the present invention is not limited thereto.

[0093] Fig.11 FIG. 4 is a schematic top view of a light emitting element according to another embodiment of the present invention. Fig.12 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention. Fig.13 FIG. 4 is a cross-sectional schematic diagram of a light emitting element according to another embodiment of the present invention. Fig.12 correspond Fig.11 The line segment IV-IV'. Fig.13 correspond Fig.11 The line segment V-V'.

[0094] Figures 11 to 13 The light emitting element 100C and Figures 7 to 9 The light emitting element 100B is similar to the light emitting element 100B, and the difference between the two is that: Figures 11 to 13 In the embodiment of the present invention, the second electrode 160B and the through hole 140aB are offset from the geometric center Sc of the semiconductor structure S. In other words, the geometric center of the second electrode 160B, the geometric center of the through hole 140aB and the geometric center Sc of the semiconductor structure S are not aligned. Figures 11 to 13In this embodiment, the through hole 140aB biased toward one side, the recess 120a biased toward one side, and the second electrode 160B disposed in the through hole 140aB and the recess 120a can make the light field distribution of the light-emitting element 100C biased toward one side, and it is more suitable for application in specific fields (for example but not limited to: automotive displays).

[0095] Fig.14 It is a top view or bottom view of a light emitting element according to an embodiment of the present invention. Fig.14 The light emitting element 100D and Figure 2 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , and the difference between the two is that the shapes of the second electrodes 160 and 160D of the two are different. Figure 2 In the embodiment of the present invention, the shape of the second electrode 160 may be circular. Fig.14 In the embodiment of the present invention, the shape of the second electrode 160D may be a square.

[0096] Fig.15 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention. Fig.15 The light emitting element 100E and Figure 2 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , and the difference between the two is that the shapes of the second electrodes 160 and 160E of the two are different. Figure 2 In the embodiment of the present invention, the shape of the second electrode 160 may be circular. Fig.15 In the embodiment of the present invention, the shape of the second electrode 160E may be hexagonal.

[0097] Fig.16 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention. Fig.16 The light emitting element 100F and Figure 2 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , and the difference between the two is that the shapes of the second electrodes 160 and 160F of the two are different. Figure 2 In the embodiment of the present invention, the shape of the second electrode 160 may be circular. Fig.16 In the embodiment of the present invention, the shape of the second electrode 160F may be an ellipse.

[0098] Fig.17 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention. Fig.17 The light emitting element 100G and Figure 2 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , but the difference between the two is that the shapes of the second electrodes 160 and 160G of the two are different. Figure 2 In the embodiment of the present invention, the shape of the second electrode 160 may be circular. Fig.17 In the embodiment of the present invention, the shape of the second electrode 160G may be a cross.

[0099] Fig.18It is a top view or bottom view of a light emitting element according to an embodiment of the present invention. Fig.18 The light emitting element 100H with Figure 2 The light emitting element 100 is similar to the light emitting element 100 of FIG. 1 , and the difference between the two is that the shapes of the semiconductor structures S and SH are different. Figure 2 In the embodiment of FIG. 1 , in the top view of the light emitting element 100 , the semiconductor structure S may be rectangular. Fig.18 In the embodiment of the present invention, in the top view or the bottom view of the light emitting element 100H, the semiconductor structure SH may be circular.

[0100] Fig.19 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention. Fig.19 The light emitting element 100I and Fig.14 The light emitting element 100D is similar to the light emitting element 100D, and the difference between the two is that the shapes of the semiconductor structures S and SI are different. Fig.14 In the embodiment of FIG. 1 , in the top view or bottom view of the light emitting device 100D, the semiconductor structure S may be rectangular. Fig.19 In the embodiment, in the top view or bottom view of the light emitting element 100I, the semiconductor structure SI may be circular.

[0101] Fig. 20 It is a top view or bottom view of a light emitting element according to another embodiment of the present invention. Fig. 20 The light emitting element 100J and Fig.15 The light emitting element 100E is similar to the light emitting element 100E, and the difference between the two is that the shapes of the semiconductor structures S and SJ are different. Fig.15 In the embodiment of FIG. 1 , in the top view or bottom view of the light emitting element 100E, the semiconductor structure S may be rectangular. Fig. 20 In the embodiment of the present invention, in the top view or the bottom view of the light emitting element 100J, the semiconductor structure SJ may be circular.

Claims

1. A light emitting element, characterized in that: include: a first type semiconductor layer; a second type semiconductor layer, disposed opposite to the first type semiconductor layer; An active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer; An intrinsic semiconductor layer having a plurality of microstructures, wherein the second-type semiconductor layer is disposed between the intrinsic semiconductor layer and the active layer; A first electrode and a second electrode are respectively disposed on two opposite sides of the active layer and are respectively electrically connected to the first-type semiconductor layer and the second-type semiconductor layer; The intrinsic semiconductor layer has a through hole, the second-type semiconductor layer has a recess, the through hole of the intrinsic semiconductor layer is connected with the recess of the second-type semiconductor layer, and the second electrode is arranged in the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer.

2. The light emitting element according to claim 1, wherein The second electrode has a first part and a second part connected to the first part. The first part of the second electrode is arranged in the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer. The second part of the second electrode is located outside the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer and is arranged on the multiple microstructures of the intrinsic semiconductor layer, and the first electrode is light-transmissive.

3. The light emitting element according to claim 1, wherein A first direction and a second direction are interlaced and substantially parallel to the active layer. The through hole of the intrinsic semiconductor layer has a first side length and a second side length in the first direction and the second direction respectively, and the first side length is smaller than the second side length.

4. The light emitting element according to claim 3, wherein: A semiconductor structure includes the first-type semiconductor layer, the second-type semiconductor layer and the active layer. The semiconductor structure has a plurality of first sidewalls arranged in the first direction and a plurality of second sidewalls arranged in the second direction. The light-emitting element further includes: A reflective structure is disposed on the second side walls and is not disposed on the first side walls.

5. The light emitting element according to claim 3, wherein: A semiconductor structure includes the first-type semiconductor layer, the second-type semiconductor layer and the active layer, and the through hole of the intrinsic semiconductor layer deviates from a geometric center of the semiconductor structure.

6. The light emitting element according to claim 1, wherein The material of the second electrode is metal.

7. The light emitting element according to claim 1, wherein The second electrode is tapered.

8. The light emitting element according to claim 1, wherein The intrinsic semiconductor layer has a thickness of T. The sum of the depths of the recess and the through hole is D, and D is in the range of T+0.2 μm to T+1.5 μm.

9. The light emitting element according to claim 1, wherein A side wall of the intrinsic semiconductor layer defining the through hole is substantially aligned with a side wall of the second-type semiconductor layer defining the recess.

10. The light emitting element according to claim 1, wherein In the top view of the light emitting element, the through hole of the intrinsic semiconductor layer and the recess of the second-type semiconductor layer substantially overlap.

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