Light emitting device

Abstract

The invention discloses a light-emitting device, comprising: a light source for emitting an illumination beam; the reflecting layer is provided with a first cavity, and the light source is located on the bottom surface of the first cavity; the light collecting layer is positioned above the reflecting layer and is provided with a second cavity, and the bottom surface of the second cavity is butted with the top surface of the first cavity; the first light field control layer is positioned above the light collecting layer and is provided with a third cavity, and the bottom surface of the third cavity is opposite to the top surface of the second cavity; the second light field control layer is positioned above the first light field control layer and is provided with a fourth cavity, the bottom surface of the fourth cavity is connected with the top surface of the third cavity, the first cavity and the second cavity are combined to form a lower cavity, the reflecting layer comprises a first material with a first refractive index, and the second material comprises a second material with a second refractive index. The lower cavity includes a second material having a second refractive index, the light collection layer includes a third material having a third refractive index, where the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.

Description

Technical Field

[0001] The invention relates to a light emitting device. Background Art

[0002] Micro LED (μLED) displays are widely used in automotive display panels. For automotive display panels, focusing light into the driver's field of view can not only increase brightness, but also prevent large-angle light from passing through reflective glass to cause visual confusion and waste of light. Therefore, in application, the light output field type will be divided into three areas: A+, A, and B, corresponding to the driver's, co-pilot's, and passenger's fields of view, respectively, and each area must meet its own specifications.

[0003] On the other hand, in the manufacturing process of microLED (μLED) displays, an over coating (OC) is often added to the microLED display to flatten the display surface. However, after adding the over coating, the forward brightness of the microLED display is lost by about 40%, and the ambient light reflectivity is increased to about 25%, reducing the efficiency of the display.

[0004] Therefore, how to control the optical field pattern emitted by the display while taking into account the efficiency of the forward luminance and the reflectivity of the ambient light becomes an urgent problem to be solved. Summary of the invention

[0005] The invention provides a light emitting device for improving the efficiency of forward luminance and reducing the reflectivity of ambient light.

[0006] A light emitting device of the present invention comprises: a light source for emitting an illumination light beam; a reflective layer having a first cavity, wherein the light source is located at the bottom surface of the first cavity; a light collecting layer located above the reflective layer, having a second cavity, wherein the bottom surface of the second cavity is in contact with the top surface of the first cavity; a first light field control layer located above the light collecting layer, having a third cavity, wherein the bottom surface of the third cavity is opposite to the top surface of the second cavity; a second light field control layer located above the first light field control layer, having a fourth cavity, wherein the bottom surface of the fourth cavity is connected to the top surface of the third cavity, wherein the first cavity and the second cavity are combined into a lower cavity, wherein the reflective layer comprises a first material having a first refractive index, the lower cavity comprises a second material having a second refractive index, and the light collecting layer comprises a third material having a third refractive index, wherein the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.

[0007] In an embodiment of the present invention, the first material and the third material are the same material.

[0008] In one embodiment of the present invention, the cross-section of the lower cavity along a first direction perpendicular to the optical axis is hexagonal, and the cross-section of the lower cavity along a second direction perpendicular to the optical axis and the first direction is hexagonal.

[0009] In one embodiment of the present invention, an area of ​​the bottom surface of the second cavity is greater than an area of ​​the top surface of the second cavity.

[0010] In one embodiment of the present invention, the material of the first light field control layer and the second light field control layer is the third material, and the material of the third cavity and the fourth cavity is the second material.

[0011] In one embodiment of the present invention, the light emitting device further comprises: a connection layer located between the light collection layer and the first light field control layer, wherein the material of the connection layer is the second material.

[0012] In one embodiment of the present invention, the cross-section of the third cavity along a first direction perpendicular to the optical axis is trapezoidal, and the cross-section of the third cavity along a second direction perpendicular to the optical axis and the first direction is rectangular.

[0013] In one embodiment of the present invention, the cross-section of the fourth cavity along a first direction perpendicular to the optical axis is trapezoidal, and the cross-section of the fourth cavity along a second direction perpendicular to the optical axis and the first direction is rectangular.

[0014] In one embodiment of the present invention, the area of ​​the top surface of the third cavity is smaller than the area of ​​the bottom surface of the third cavity, and the area of ​​the top surface of the fourth cavity is smaller than the area of ​​the bottom surface of the fourth cavity.

[0015] In one embodiment of the present invention, the area of ​​the top surface of the third cavity is larger than the area of ​​the bottom surface of the third cavity, and the area of ​​the top surface of the fourth cavity is smaller than the area of ​​the bottom surface of the fourth cavity.

[0016] In one embodiment of the present invention, the top surface of the third cavity and the bottom surface of the fourth cavity have the same shape.

[0017] In one embodiment of the present invention, the third cavity and the fourth cavity are combined into an upper cavity, wherein the cross-section of the lower cavity along a first direction perpendicular to the optical axis is hexagonal, and the cross-section of the lower cavity along a second direction perpendicular to the optical axis and the first direction is rectangular.

[0018] In one embodiment of the present invention, the light emitting device further comprises: a light absorbing layer, wherein the light absorbing layer is disposed on the top surface of the second light field control layer and has an opening at the top surface of the fourth cavity to expose the top surface of the fourth cavity.

[0019] In one embodiment of the present invention, the light emitting device further comprises: an anti-reflection film, wherein the anti-reflection film is disposed on the second light field control layer and covers the top surface of the fourth cavity.

[0020] Based on the above, the light-emitting device provided by the present invention can control the optical field pattern emitted to meet the automotive display specifications, including compressing the light emitted in the vertical direction and extending the light emitted in the horizontal direction. On the other hand, it can improve the light emission efficiency and reduce the light loss of the forward light. And reduce the ambient light reflectivity. Therefore, in addition to the field pattern control, the efficiency of the forward luminance and the ambient light reflectivity are also taken into account. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of a light emitting device according to an embodiment of the present invention.

[0022] Figure 2A , Figure 2B It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0023] Figure 2C It is a three-dimensional diagram of a light emitting device according to an embodiment of the present invention.

[0024] Figure 3A , Figure 3B It is a schematic diagram of a light path of a light emitting device according to an embodiment of the present invention.

[0025] Figure 4A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0026] Figure 4B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0027] Figure 5A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0028] Figure 5B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0029] Fig. 6A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0030] Figure 6B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0031] Fig. 7A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0032] Figure 7BIt is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0033] Fig. 8A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0034] Figure 8B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0035] Fig. 9A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0036] Fig. 9B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0037] Fig. 10A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0038] Fig. 10B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0039] Fig.11A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0040] Fig. 11B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0041] Figure 12A-12L It is a manufacturing flow chart of a light emitting device according to an embodiment of the present invention.

[0042] Fig.13A , Fig. 13B It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0043] Fig. 13C It is a three-dimensional diagram of a light emitting device according to an embodiment of the present invention.

[0044] Fig.14A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0045] Fig. 14B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0046] Fig.15A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0047] Fig. 15B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0048] Fig.16AIt is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0049] Fig. 16B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0050] Figure 17A-17N It is a manufacturing flow chart of a light emitting device according to an embodiment of the present invention.

[0051] Wherein, the reference numerals are:

[0052] 10: Display device

[0053] 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 200: Light emitting device

[0054] 102, 202: Luminous area

[0055] 104, 204: light absorption area

[0056] 106: Luminous layer

[0057] 108, 208: Light field control layer

[0058] 112: Light Source

[0059] 114: Reflection layer

[0060] 116: First cavity

[0061] 116T, 120T, 126T, 130T: Top surface

[0062] 118: Light-collecting layer

[0063] 120: Second cavity

[0064] 120B, 126B, 130B: Bottom

[0065] 122: Connection layer

[0066] 124, 224: first light field control layer

[0067] 126, 126B, 126C, 126D, 126E, 126F, 126G, 226: third cavity

[0068] 128, 228: Second light field control layer

[0069] 130, 130B, 130C, 130D, 130E, 130F, 130G, 230: fourth cavity

[0070] 132: Protective layer

[0071] 134: light absorbing layer

[0072] 136: Anti-reflective film

[0073] 140: Lower cavity

[0074] 150, 250, 260: light-transmitting layer

[0075] AA, BB: Line

[0076] HBMR, W1, W2, W3, W4: Width

[0077] HR, H1, H2, H3: Height

[0078] L: Lighting beam

[0079] LH, LL, SH, SL: Length

[0080] X, Y, Z: direction DETAILED DESCRIPTION

[0081] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but is not intended to limit the present invention.

[0082] Figure 1 Schematic diagram of a light emitting device according to an embodiment of the present invention. Figure 1 As shown, the display device 10 has an array of light emitting devices 100. Each of the light emitting devices 100 can be divided into two parts: a light emitting area 102 and a light absorbing area 104. The light emitting area 102 is used to emit an illumination beam, and the light absorbing area 104 is used to absorb stray beams emitted by the light emitting area 102. The specific structure and function of the light emitting device 100 will be described below.

[0083] Figure 2A , Figure 2B It is a cross-sectional view of a light emitting device according to an embodiment of the present invention.

[0084] Please refer to Figure 2A . Figure 2A yes Figure 1 A cross-sectional view of the light-emitting device along line AA.

[0085] Figure 2A A light emitting device 100 is shown, which is divided into a light emitting region 102 and a light absorbing region 104. In addition, it can be further divided into a light emitting layer 106 and a light field control layer 108 along the vertical direction.

[0086] The light emitting area 102 includes a light source 112 , a reflective layer 114 , a light collection layer 118 , a first light field control layer 124 , and a second light field control layer 128 .

[0087] The light source 112 is used to emit an illumination light beam L. In some embodiments, the light source 112 may be a micro light emitting diode, or a light emitting diode having a similar function. The illumination light beam L may be red light, green light, blue light, or a combination thereof.

[0088] The reflective layer 114 has a first cavity 116 . The light source 112 is located at the bottom surface of the first cavity 116 .

[0089] The light collection layer 118 is located above the reflective layer 114 and has a second cavity 120 . The bottom surface 120B of the second cavity 120 is butted against the top surface 116T of the first cavity 116 .

[0090] like Figure 2A As shown, the first cavity 116 and the second cavity 120 are combined into a lower cavity 140 .

[0091] In this embodiment, the reflective layer 114 includes a first material having a first refractive index. The lower cavity 140 (including the first cavity 116 and the second cavity 120) includes a second material having a second refractive index, and the second material completely covers the light source 112. The light collection layer 118 includes a third material having a third refractive index. In this embodiment, the first material, the second material, and the third material are all light-transmitting materials, wherein the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.

[0092] In some embodiments, the first material may be a transparent photoresist with a refractive index of 1.47. In some embodiments, the second material may be a high refractive index resin material with a refractive index of 1.65. In some embodiments, the third material may be a transparent photoresist with a refractive index of 1.488. However, the present disclosure is not limited thereto.

[0093] In some embodiments, the first material and the third material are the same material, so the types and quantities of materials required for manufacturing the light-emitting device can be reduced, thereby reducing the complexity of the manufacturing process of the light-emitting device.

[0094] In this embodiment, the area of ​​the bottom surface 116B of the first cavity 116 is smaller than the area of ​​the top surface 116T of the first cavity 116. Therefore, the first cavity 116 is located in the first direction ( Figure 2A The cross-section (in the X direction) is a trapezoid that is wide at the top and narrow at the bottom.

[0095] In this embodiment, the area of ​​the bottom surface 120B of the second cavity 120 is greater than the area of ​​the top surface 120T of the second cavity 120. Therefore, the second cavity 120 is located in the first direction ( Figure 2A The cross-section (in the X direction) is a trapezoid that is narrow at the top and wide at the bottom.

[0096] Therefore, in this embodiment, if Figure 2AAs shown, the cross section of the lower cavity 140 (including the first cavity 116 and the second cavity 120) along the first direction perpendicular to the optical axis is a hexagon. Therefore, the illumination light beam emitted by the light source 112 can be transmitted between the reflective layer 114, the lower cavity 140, and the light collection layer 118, and mainly enters the first light field control layer 124 and the third cavity 126 through the top surface 120T of the lower cavity 140.

[0097] In addition, since the reflective layer 114 and the light collection layer 118 are both made of light-transmitting materials, a portion of the illumination light beam may be incident on the first light field control layer 124 and the third cavity 126 through the reflective layer 114 and the light collection layer 118 due to refraction.

[0098] Specifically, in the reflective layer 114 and the first cavity 116, since the second refractive index of the second material in the first cavity 116 is greater than the first refractive index of the first material in the reflective layer 114, a portion of the illumination light beam emitted by the light source 112 will be incident on the interface between the reflective layer 114 and the first cavity 116. At this time, part of the illumination light beam will be reflected back to the first cavity 116 by the reflective layer 114 due to total reflection, thereby reducing the loss of the illumination light beam.

[0099] In the light-collecting layer 118 and the second cavity 120, since the second refractive index of the second material of the second cavity 120 is greater than the third refractive index of the third material of the light-collecting layer 118, when the illumination light beam emitted by the light source 112 enters the interface between the light-collecting layer 118 and the second cavity 120, part of the illumination light beam will be reflected back to the second cavity 120 by the light-collecting layer 118 due to total reflection, thereby reducing the loss of the illumination light beam.

[0100] Therefore, by selecting transparent materials with different refractive indices for the reflective layer 114, the first cavity 116, the light collecting layer 118 and the second cavity 120, the illumination beam can be transmitted in the lower cavity 140 formed by the first cavity 116 and the second cavity 120 by total reflection, thereby reducing the loss of the illumination beam.

[0101] Please come back Figure 2A .like Figure 2A As shown, the first light field control layer 124 is located above the light collection layer 118 and has a third cavity 126 , and a bottom surface 126B of the third cavity 126 is opposite to a top surface 120T of the second cavity 120 .

[0102] The second light field control layer 128 is located above the first light field control layer 124 and has a fourth cavity 130 . The bottom surface 130B of the fourth cavity 130 is connected to the top surface 126T of the third cavity 126 .

[0103] After the illumination light beam passes through the lower cavity 140 formed by the first cavity 116 and the second cavity 120, it will enter the third cavity 126 of the first light field control layer 124 and the fourth cavity 130 of the second light field control layer 128. After the third cavity 126 and the fourth cavity 130 shape the light field of the illumination light beam, the shaped illumination light beam is emitted.

[0104] In this embodiment, the material of the first light field control layer 124 is the third material, and the material of the third cavity 126 is the second material. The second refractive index of the second material is greater than the third refractive index of the third material. Therefore, when the illumination light beam enters the first light field control layer 124 from the third cavity 126, total reflection may occur at the interface, and the illumination light beam is retained in the third cavity 126.

[0105] In this embodiment, the area of ​​the bottom surface 126B of the third cavity 126 is greater than the area of ​​the top surface 126T of the third cavity 126. Therefore, the third cavity 126 is located in the first direction ( Figure 2A The cross-section (in the X direction) is a trapezoid that is narrow at the top and wide at the bottom.

[0106] In this embodiment, the material of the second light field control layer 128 is the third material, and the material of the fourth cavity 130 is the second material. The second refractive index of the second material is greater than the third refractive index of the third material. Therefore, when the illumination light beam enters the second light field control layer 128 from the fourth cavity 130, total reflection may occur at the interface, and the illumination light beam is retained in the fourth cavity 130 and emitted outward through the top surface 130T of the fourth cavity 130.

[0107] In this embodiment, the area of ​​the bottom surface 130B of the fourth cavity 130 is greater than the area of ​​the top surface 130T of the fourth cavity 130. Therefore, the fourth cavity 130 is located in the first direction ( Figure 2A The cross-section (in the X direction) is a trapezoid that is narrow at the top and wide at the bottom.

[0108] Please come back Figure 2A .like Figure 2A As shown, in the light absorption region 104 of the light emitting device 100 , there is no cavity containing the second material in the reflective layer 114 , the light collection layer 118 , the first light field control layer 124 , and the second light field control layer 128 .

[0109] Please come back Figure 2A .like Figure 2A As shown, the light emitting device 100 further includes a connection layer 122 located between the light collection layer 118 and the first light field control layer 124. In this embodiment, the material of the connection layer 122 is the second material.

[0110] Since the connecting layer 122 is connected to the second cavity 120 and the third cavity 126 and all three are made of the second material with the same refractive index, the illumination beam can reduce the deflection of the illumination beam caused by the refractive index difference when passing through the connecting layer 122 and the second cavity 120 and the third cavity 126.

[0111] Please come back Figure 2A .like Figure 2A As shown, the light emitting device 100 further includes a light absorbing layer 134 , wherein the light absorbing layer 134 is disposed on the top surface of the second light field control layer 128 and has an opening at the top surface 130T of the fourth cavity 130 to expose the top surface 130T of the fourth cavity 130 .

[0112] Specifically, the light absorbing layer 134 is located in the light absorbing region 104 , so the illumination light beam incident on the light absorbing layer 134 will be absorbed by the light absorbing layer 134 and will not be emitted outside the light emitting device 100 .

[0113] On the other hand, the light absorption layer 134 extends from the light absorption region 104 to the light emitting region 102. The orthographic projection of the light absorption layer 134 along the optical axis partially overlaps with the orthographic projection of the fourth cavity 130 along the optical axis. Therefore, the light absorption layer 134 can effectively absorb most of the illumination light beam that is not emitted from the top surface 130T of the fourth cavity 130, so as to reduce the influence on the light field shape of the illumination light beam.

[0114] In some embodiments, the light absorbing layer 134 is a black photoresist that covers the entire visible light band and has high absorption characteristics, and is used to absorb the illumination light beam that is not emitted from the top surface 130T of the fourth cavity 130, or absorb the illumination light beam with a larger light emitting direction angle, so as to reduce the impact on the light field shape of the illumination light beam. In some embodiments, the refractive index of the black photoresist of the light absorbing layer is 1.5694.

[0115] Please come back Figure 2A .like Figure 2A As shown, the light emitting device 100 further includes an anti-reflection film 136 , wherein the anti-reflection film 136 is disposed on the second light field control layer 128 and covers the top surface 130T of the fourth cavity 130 . The anti-reflection film 136 is disposed on both the light emitting region 102 and the light absorbing region 104 .

[0116] The anti-reflection film 136 is used to increase the penetration of the interface to increase light output, and reduce the reflection of ambient light on the interface to reduce the impact on the light field generated by the light emitting device 100 .

[0117] Please refer to Figure 2B . Figure 2B yes Figure 1 A cross-sectional view of the light-emitting device along line BB. Figure 2B The structure shown is Figure 2AThe structures shown are similar. Therefore, the same parts are not repeated here. The cross section of the lower cavity 140 along the second direction perpendicular to the optical axis and the first direction is hexagonal.

[0118] like Figure 2B As shown, in this embodiment, the area of ​​the bottom surface 116B of the first cavity 116 is smaller than the area of ​​the top surface 116T of the first cavity 116. Therefore, the first cavity 116 is perpendicular to the optical axis and perpendicular to the first direction in the second direction ( Figure 2A The cross-section (in the Y direction) is a trapezoid that is wide at the top and narrow at the bottom.

[0119] In this embodiment, the area of ​​the bottom surface 120B of the second cavity 120 is greater than the area of ​​the top surface 120T of the second cavity 120. Therefore, the second cavity 120 is perpendicular to the optical axis and perpendicular to the first direction. Figure 2B The cross-section (in the Y direction) is a trapezoid that is narrow at the top and wide at the bottom.

[0120] Therefore, in this embodiment, if Figure 2B As shown, the lower cavity 140 (including the first cavity 116 and the second cavity 120) is arranged along a second direction ( Figure 2B Therefore, the illumination light beam emitted by the light source 112 can be transmitted among the reflective layer 114, the lower cavity 140, and the light collection layer 118, and mainly enters the first light field control layer 124 and the third cavity 126 through the top surface 120T of the lower cavity 140.

[0121] Please come back Figure 2B .like Figure 2B As shown, the third cavity 126 is arranged along a second direction ( Figure 2B The cross section of the third cavity 126 in the Y direction is a rectangle. Therefore, the three-dimensional shape of the third cavity 126 is a trapezoidal column.

[0122] like Figure 2B As shown, the fourth cavity 130 is along a second direction ( Figure 2B The cross section of the third cavity 130 in the Y direction is a rectangle. Therefore, the three-dimensional shape of the third cavity 130 is a trapezoidal column.

[0123] Figure 2C is a three-dimensional diagram of a light emitting device according to an embodiment of the present invention. Figure 2C . Figure 2C Only the corresponding Figure 2A and Figure 2B A three-dimensional diagram of a partial structure of a light emitting device. Specifically, Figure 2C Only the perspective view of the first cavity 116 , the second cavity 120 , the third cavity 126 , and the fourth cavity 130 is shown.

[0124] like Figure 2C As shown, the first cavity 116 is in a first direction ( Figure 2C The cross section of the first cavity 116 along the second direction ( Figure 2C The cross-section (in the Y direction) is a trapezoid that is wide at the top and narrow at the bottom.

[0125] like Figure 2C As shown, the second cavity 120 is in a first direction ( Figure 2C The cross section of the second cavity 120 along the second direction ( Figure 2C The cross-section (in the Y direction) is a trapezoid that is narrow at the top and wide at the bottom.

[0126] like Figure 2C As shown, the third cavity 126 is in a first direction ( Figure 2C The cross section of the third cavity 126 is a trapezoidal shape with a narrow top and a wide bottom. Figure 2C The cross-section (in the Y direction) is a rectangle.

[0127] like Figure 2C As shown, the fourth cavity 130 is in a first direction ( Figure 2C The cross section of the fourth cavity 130 along the second direction ( Figure 2C The cross-section (in the Y direction) is a rectangle.

[0128] Please refer to Figure 2A and Figure 2B In order to obtain the best light field distribution, the dimensions of each part of the light-emitting device must be within a certain range.

[0129] In some embodiments, the height HR of the reflective layer 114 is in the range of 3-15 μm, preferably 15 μm.

[0130] In some embodiments, the length LL of the first cavity 116 along the first direction (X direction) is in the range of 1-7 μm, preferably 3 μm.

[0131] In some embodiments, the length SL of the first cavity 116 along the second direction (Y direction) is in the range of 1-8 μm, preferably 2 μm.

[0132] In some embodiments, the height H1 of the light collecting layer 118 is in the range of 5-40 μm, preferably 40 μm.

[0133] In some embodiments, the length LH of the second cavity 120 along the first direction (X direction) ranges from 10 to 25 μm, preferably 15 μm.

[0134] In some embodiments, the length SH of the second cavity 120 along the second direction (Y direction) ranges from 0 to 15 μm, preferably 9 μm.

[0135] In some embodiments, the height H2 of the tie layer 122 is in the range of 1-3 μm, preferably 3 μm.

[0136] In some embodiments, the height H3 of the first light field control layer 124 is in the range of 5-15 μm, preferably 15 μm.

[0137] In some embodiments, the width W1 of the first light field control layer 124 in the first direction (X direction) is in the range of 10-20 μm, preferably 15 μm.

[0138] In some embodiments, the height H4 of the second light field control layer 128 is in the range of 5-15 μm, preferably 15 μm.

[0139] In some embodiments, the width W2 of the second light field control layer 128 in the first direction (X direction) is in the range of 10-20 μm, preferably 15 μm.

[0140] In some embodiments, the width HBMR of the light absorbing layer 134 in the first direction (X direction) is in the range of 0-15 μm, preferably 14 μm.

[0141] Figure 3A , Figure 3B This is a schematic diagram of the light path of a light emitting device according to an embodiment of the present invention. Figure 3A and Figure 3B When the light source 112 emits the illumination light beam L, the illumination light beam is emitted in all directions.

[0142] The reflective layer 114 and the first cavity 116 are also called a reflective cup. Due to the difference in refractive index between the reflective layer 114 and the first cavity 116, that is, the refractive index of the first cavity 116 is greater than the refractive index of the reflective layer 114, the reflective cup can redirect the illumination light beam emitted in one direction to be emitted upward in a total reflection manner.

[0143] Due to the difference in reflectivity between the light collecting layer 118 and the second cavity 120 , that is, the refractive index of the second cavity 120 is greater than the refractive index of the light collecting layer 118 , the illumination light beam with a larger angle emitted by the light source 112 will be concentrated toward the center through refraction and reflection.

[0144] However, since the light collection layer 118 is made of a light-transmitting material, part of the illumination light beam can also enter the third cavity 126 and the first light field control layer 124 through the light collection layer.

[0145] When the illumination light beam is incident on the first light field control layer 124 and the third cavity 126, the second light field control layer 128 and the fourth cavity 130, the illumination light beam can be concentrated multiple times, the light field distribution can be controlled, and the light loss can be reduced due to the upper narrow and lower wide trapezoidal structure of the third cavity 126 and the fourth cavity 130, and the difference in refractive index between the first light field control layer 124 and the second light field control layer 128.

[0146] exist Figure 2A-2C In the embodiment, the first light field control layer 124 and the third cavity 126, and the second light field control layer 128 and the fourth cavity 130 have an important influence on the light field shape. The following is an example to illustrate.

[0147] Figure 4A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Figure 4B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0148] Figure 4A is a cross-sectional view of another light emitting device 100A.

[0149] The structure of the light emitting device 100A is similar to that of the light emitting device 100, so the repeated parts are not repeated. The difference is that the light emitting device 100A has only a light-transmitting layer 150 at the corresponding light field control layer 108 of the light emitting device 100, that is, the first light field control layer 124 and the third cavity 126, and the second light field control layer 128 and the fourth cavity 130 of the light emitting device 100, wherein the material of the light-transmitting layer 150 is the same as that of the third cavity 126 and the fourth cavity 130, and has the same refractive index.

[0150] For automotive display panel applications, the light field distribution includes A+ area, A area, and B area, which correspond to the perspectives of the driver, co-driver, and passenger, respectively.

[0151] The viewing angle range is expressed as an angle (H, V), where H is the horizontal viewing angle range and V is the vertical viewing angle range.

[0152] The viewing angle and brightness requirements for each zone are as follows.

[0153] The critical angle of the A+ zone (driving) viewing angle is (-10°~10°, -4°~8°), where the left and right viewing angles are -10°~10° and the up and down viewing angles are -4°~8°. The brightness requirement for the A+ zone is: B(A+zone)>B(0)*80%, where B(A+zone) is the light field brightness of the A+ zone, and B(0°) is the light field brightness when the viewing angle is 0 degrees.

[0154] The critical angle of the viewing angle in Area A (the co-pilot) is (-40° to 40°, -10° to 20°), where the left and right viewing angles are distributed from -40° to 40°, and the up and down viewing angles are distributed from -10° to 20°. The brightness requirement for Area A is: B(A + zone) > B(0°) * 45%, where B(Azone) is the light field brightness of Area A, and B(0°) is the light field brightness at a viewing angle of 0°.

[0155] The critical angle of the viewing angle in Area B (the passenger) is (-50° to 50°, -10° to 20 0 ), where the left and right viewing angles are distributed from -50° to 50°, and the up and down viewing angles are distributed from -10° to 20°. The brightness requirement for Area B is: B(B zone) > B(0°) * 30%, where B(Bzone) is the light field brightness of Area B, and B(0°) is the light field brightness at a viewing angle of 0°.

[0156] In addition, there is another viewing angle Area V, which is ±35° in the vertical direction of the viewing angle. The brightness requirement for Area V is: B(Vzone) < B(0°) * 7%, so as to greatly reduce the chaos in the driving line of sight caused by large-angle light phenomena. Where B(Vzone) is the light field brightness of Area V, and B(0°) is the light field brightness at a viewing angle of 0°.

[0157] Figure 4B When there is no light field control layer, Monte Carlo ray tracing is performed using the geometric optical commercial software LightTools to obtain the light field distribution. The viewing angle distributions of each area are as follows:

[0158] Area A+: (-27.1° to 27.0°, -12.2° to 18.9°); Area A: (-39.7° to 39.4°, -23.5° to 31.4°); Area B: (-52.4° to 53.0°, -28.7° to 37.3°); Area V: (-42.9°, -49.1°).

[0159] Figure 5A is a cross-sectional view of the light-emitting device 100, which has the same structure as the Figure 2A shown light-emitting device 100. Therefore, in Figure 5A , the light emitted by the light source 112 will pass through the lower cavity, the third cavity, and the fourth cavity and then be emitted to the outside.

[0160] Figure 5B When Monte Carlo ray tracing is performed using the geometric optical commercial software LightTools to obtain the light field distribution, the viewing angle distributions of each area are as follows:

[0161] A+ zone: (-28.2°~28.0°, -10.1°~12.4°); A zone: (-40.9°~40.4°, -19.1°~21.4°); B zone: (-66.6°~66.4°, -22.4°~25.2°); V zone: (-34.0°, 33.6°).

[0162] In addition, in this embodiment, the light field loss is 4.07%, and the ambient light reflection is 0.04%.

[0163] Therefore, in the absence of the light field control layer 108, for example Figure 4A and Figure 4B , the viewing angle ranges of the A+ region, the A region, the B region and the V region are all smaller than the case where the light field control layer 108 is provided, for example Figure 5A and Figure 5B Therefore, we can know that Figure 2A / Figure 5A The light field control layer structure shown has a significant effect on improving the viewing angle range of each area.

[0164] In other embodiments, the third cavity 126 and the fourth cavity 130 of the light field control layer may also have other combinations of different shapes. Figure 2A , Figure 2B In the light emitting device 100, the third cavity 126 is a trapezoidal column, the fourth cavity 130 is a trapezoidal column, and when each size parameter is an optimal structure, the light field loss is 0.04%.

[0165] Fig. 6A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Figure 6B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0166] In this embodiment, the structure of the light emitting device 100B is similar to Figure 2A The structure of the light emitting device 100 is similar. The difference is that the third cavity 126B is a rectangular parallelepiped, and the fourth cavity 130B is a rectangular parallelepiped. In this embodiment, the light field loss is 21.19%.

[0167] Fig. 7A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Figure 7B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0168] In this embodiment, the structure of the light emitting device 100C is similar to Figure 2A The structure of the light emitting device 100 is similar. The difference is that the third cavity 126C is a rectangular parallelepiped, and the fourth cavity 130C is a semi-cylindrical. In this embodiment, the light field loss is 10.5%.

[0169] Fig. 8A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Figure 8B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0170] In this embodiment, the structure of the light emitting device 100D is similar to Figure 2A The structure of the light emitting device 100 is similar. The difference is that the third cavity 126D is a rectangular parallelepiped, and the fourth cavity 130D is a trapezoidal column. In this embodiment, the light field loss is 21.19%.

[0171] Fig. 9A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 9B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0172] In this embodiment, the structure of the light emitting device 100E is similar to Figure 2A The structure of the light emitting device 100 is similar. The difference is that the third cavity 126E is a semi-cylinder and the fourth cavity 130E is a semi-cylinder. In this embodiment, the light field loss is 7.11%.

[0173] Fig. 10A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 10B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0174] In this embodiment, the structure of the light emitting device 100F is similar to Figure 2A The structure of the light emitting device 100 is similar. The difference is that the third cavity 126F is a trapezoidal column, and the fourth cavity 130F is a rectangular parallelepiped. In this embodiment, the light field loss is 3.52%.

[0175] Fig.11A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 11B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0176] In this embodiment, the structure of the light emitting device 100G is similar to Figure 2A The structure of the light emitting device 100 is similar. The difference is that the third cavity 126G is a trapezoidal column, and the fourth cavity 130G is a semi-circular column. In this embodiment, the light field loss is 9.49%.

[0177] therefore, FIG. 2A to FIG. 2C The light emitting device 100 shown is relative to FIG. 6A to FIG. 11B Among them, the shapes of the other third cavity and the fourth cavity have the lowest optical field loss.

[0178] Figure 12A-12Lis a flowchart of manufacturing a light emitting device according to an embodiment of the present invention. FIG. 2A to FIG. 2C The manufacturing flow chart of the light emitting device 100 is shown.

[0179] Please refer to Fig. 12A On the light source 112, a first material having a first refractive index is spin-coated to form a reflective layer 114. Fig. 12B .

[0180] Please refer to Fig. 12B The reflective layer 114 is etched to form a first cavity 116. Fig. 12C .

[0181] Please refer to Fig. 12C A second material having a second refractive index is spin-coated to fill the first cavity 116 and cover the reflective layer 114. Fig.12D .

[0182] Please refer to Fig.12D The second material is etched to form a trapezoidal shape of the second cavity 120. Fig.12E .

[0183] Please refer to Fig.12E A third material having a third refractive index is spin-coated to form the light collecting layer 118 .

[0184] Therefore, by FIG. 12A to FIG. 12E In the steps shown, the light emitting layer 106 is formed.

[0185] Please continue to refer to Fig.12F On the light source 112, a second material having a second refractive index is spin-coated to form a protective layer 132, and a groove of the light absorption layer is etched. Figure 12G .

[0186] Please refer to Figure 12G A light absorbing material is spin-coated on the protective layer 132 to form a light absorbing layer 134. Fig.12H .

[0187] Please refer to Fig.12H A third material having a third refractive index is spin-coated on the protective layer 132 and the light absorbing layer 134 to form a second light field control layer 128. Fig.12I .

[0188] Please refer to Fig.12I The second optical field control layer 128 is etched to form a fourth cavity 130, and a second material having a second refractive index is spin-coated to fill the fourth cavity 130. Fig.12J .

[0189] Please refer to Fig.12J .repeat Fig.12H and Fig.12I to form the first light field control layer 124, etch the first light field control layer 124 to form the third cavity 126, spin-coat the second material having the second refractive index to fill the third cavity 126, and form the connection layer 122 with the second material.

[0190] therefore, FIG. 12F to FIG. 12J , which can be used to form the light field control layer 108 .

[0191] Please refer to Figure 12K , flip the light field control layer 108 180 degrees and move it above the light emitting layer 106. Figure 12L .

[0192] Please refer to Figure 12L , the light field control layer 108 and the light collection layer 118 of the light emitting layer 106 are connected to the second cavity 120 to form the light emitting device 100 .

[0193] Therefore, by means of the above-mentioned light emitting device 100, the shape of the emitted light field can be controlled. By reducing the light loss of the forward light from 40% to 0.04% and the ambient light reflection from 25% to 4.07%, the light extraction efficiency can be greatly improved, the ambient light reflectivity can be reduced, and the light field emitted by the vehicle display can be more in line with the driving perspective.

[0194] In addition, if FIG. 12A to FIG. 12L As shown, the manufacturing process of the light emitting device is simple and can be completed by the existing semiconductor process, thereby improving the ability to be integrated with other component processes.

[0195] In another embodiment, the configuration of the third cavity and the fourth cavity in the light field vacant layer may be changed to make the light output more concentrated.

[0196] Fig.13A , Fig. 13B It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 13C It is a three-dimensional diagram of a light emitting device according to an embodiment of the present invention. Fig.13A , Fig. 13B The light emitting device 200 shown is Figure 2A , Figure 2B The light emitting device 100 has a similar structure, so the same parts are not repeated. The difference between the light emitting device 200 and the light emitting device 100 is that the area of ​​the top surface 226T of the third cavity 226 is larger than the area of ​​the bottom surface 226B of the third cavity 226, and the area of ​​the top surface 230T of the fourth cavity 230 is smaller than the area of ​​the bottom surface 230B of the fourth cavity 230. The top surface 226T of the third cavity 226 and the bottom surface 230B of the fourth cavity 230 have the same shape.

[0197] Therefore, in the light emitting device 200, the third cavity 226 is a trapezoidal column with a wide top and a narrow bottom, and the fourth cavity 230 is a trapezoidal column with a narrow top and a wide bottom. In the light emitting device 100, the third cavity 126 is a trapezoidal column with a narrow top and a wide bottom, and the fourth cavity 130 is a trapezoidal column with a narrow top and a wide bottom.

[0198] The third cavity 226 is a trapezoidal column that is wide at the top and narrow at the bottom, and the fourth cavity 230 is a trapezoidal column that is narrow at the top and wide at the bottom, wherein the third cavity 226 and the fourth cavity 230 are combined into an upper cavity, wherein the cross-section of the upper cavity along a first direction perpendicular to the optical axis (i.e., the X direction) is a hexagon, and the cross-section of the upper cavity along a second direction perpendicular to the optical axis and perpendicular to the first direction (i.e., the Y direction) is a rectangle.

[0199] Therefore, in the light emitting device 200, the cross-sections of the upper cavity and the lower cavity along the first direction perpendicular to the optical axis (ie, the X direction) are both hexagonal, and the cross-sections along the second direction perpendicular to the optical axis and the first direction (ie, the Y direction) are rectangular.

[0200] With this structure, the illumination light can be concentrated twice before being emitted, which can effectively improve the brightness of the illumination light beam.

[0201] Please refer to Fig.13A and Fig. 13B In order to obtain the best light field distribution, the dimensions of each part of the light-emitting device must be within a certain range.

[0202] In some embodiments, the height HR of the reflective layer 114 is in the range of 5-15 μm, preferably 15 μm.

[0203] In some embodiments, the length LL of the first cavity 116 in the first direction (X direction) is in the range of 1-7 μm, preferably 1 μm.

[0204] In some embodiments, the length SL of the first cavity 116 in the second direction (Y direction) is in the range of 1-6 μm, preferably 1 μm.

[0205] In some embodiments, the height H1 of the light collecting layer 118 is in the range of 20-70 μm, preferably 50 μm.

[0206] In some embodiments, the length LH of the second cavity 120 in the first direction (X direction) is in the range of 1-24 μm, preferably 20 μm.

[0207] In some embodiments, the length SH of the second cavity 120 in the second direction (Y direction) ranges from 1 to 14 μm, preferably 6.25 μm.

[0208] In some embodiments, the height H2 of the tie layer 122 is in the range of 1-3 μm, preferably 3 μm.

[0209] In some embodiments, the width W3 of the first light field control layer 224 in the first direction (X direction) is in the range of 0-10 μm, preferably 0 μm.

[0210] In some embodiments, the height H4 of the second light field control layer 228 is in the range of 5-20 μm, preferably 10 μm.

[0211] In some embodiments, the width W4 of the second light field control layer 228 in the first direction (X direction) is in the range of 12-24 μm, preferably 20 μm.

[0212] exist Figure 13A-13C In the embodiment, the first light field control layer 224 and the third cavity 226, and the second light field control layer 228 and the fourth cavity 230 have an important influence on the light field shape. The following is an example.

[0213] Fig.14A It is a cross-sectional view of a light emitting device according to an embodiment of the present invention. Fig. 14B It is a light field distribution of a light emitting device according to an embodiment of the present invention.

[0214] Fig.14A 2 is a cross-sectional view of another light emitting device 200A. The light emitting device 200A only has a light source 112, a light-transmitting layer 250 and an anti-reflection film 136, wherein the material of the light-transmitting layer 250 is the same as that of the light-emitting device 200A. Fig.13A The third cavity 226 and the fourth cavity 230 are made of the same material and have the same refractive index. Fig.14A In the embodiment, the light emitted by the light source 112 is directly emitted to the outside.

[0215] Fig. 14B The light field distribution is obtained by Monte Carlo ray tracing using the commercial geometric optics software LightTools. The viewing angle distribution of each area is shown below:

[0216] A+ zone: (-46°~48°, -44°~46°); A zone: (-66°~68°, -66°~66°); B zone: (-74°~72°, -72°~72°); V zone: (-86°, 88°).

[0217] In addition, in this embodiment, the light field loss is 44%, and the ambient light reflection is 25.4%.

[0218] Fig.15A is a cross-sectional view of another light emitting device 200B. Fig.13AThe structure of the light emitting device 200 shown is similar, so the repeated parts are not repeated. The difference is that the light emitting device 200B has only a light-transmitting layer 260 at the light field control layer 108 corresponding to the light emitting device 200, that is, at the first light field control layer 224 and the third cavity 226, and the second light field control layer 228 and the fourth cavity 230 of the light emitting device 200, wherein the material of the light-transmitting layer 260 is the same as that of the third cavity 226 and the fourth cavity 230, and has the same refractive index. Therefore, Fig.15A In the embodiment, the light emitted by the light source 112 is concentrated by the lower cavity and then emitted to the outside.

[0219] Fig. 15B The light field distribution is obtained by Monte Carlo ray tracing using the commercial geometric optics software LightTools. The viewing angle distribution of each area is shown below:

[0220] A+ zone: (-22°~22°, -16°~26°); A zone: (-54°~54°, -44°~44°); B zone: (-74°~74°, -62°~66°); V zone: (-86°, 88°).

[0221] In addition, in this embodiment, the light field loss is 2.7%, and the ambient light reflection is 18.8%.

[0222] Fig.16A is a cross-sectional view of the light emitting device 200, and Fig.13A The structure of the light emitting device 200 shown is the same. Fig.15A In the embodiment, the light emitted by the light source 112 is concentrated twice by passing through the lower cavity and the upper cavity before being emitted to the outside.

[0223] Fig. 16B The light field distribution is obtained by Monte Carlo ray tracing using the commercial geometric optics software LightTools. The viewing angle distribution of each area is shown below:

[0224] A+ zone: (-22°~20°, -6°~16°); A zone: (-56°~58°, -16°~24°); B zone: (-74°~72°, -20°~28°); V zone: (-32°, 34°).

[0225] In addition, in this embodiment, the light field loss is -20.3%, and the ambient light reflection is 4.3%.

[0226] therefore, FIG. 16A to FIG. 16B The light emitting device 200 in FIG. 14A to FIG. 15BThe light emitting device 200A and the light emitting device 200B shown have larger A+ area, A area, B area, and smaller V area, indicating that the light emitting device 200 can make the light field more concentrated and reduce the influence of ambient light reflection to improve the light output quality.

[0227] Figure 17A-17N is a flowchart of manufacturing a light emitting device according to an embodiment of the present invention. FIG. 13A to FIG. 13C The manufacturing flow chart of the light emitting device 200 is shown.

[0228] Please refer to Fig.17A On the light source 112, a first material having a first refractive index is spin-coated to form a reflective layer 114. Fig. 17B .

[0229] Please refer to Fig. 17B The reflective layer 114 is etched to form a first cavity 116. Fig. 17C .

[0230] Please refer to Fig. 17C A second material having a second refractive index is spin-coated to fill the first cavity 116 and cover the reflective layer 114. Fig.17D .

[0231] Please refer to Fig.17D The second material is etched to form a trapezoidal shape of the second cavity 120. Fig.17E .

[0232] Please refer to Fig.17E A third material having a third refractive index is spin-coated to form the light collecting layer 118 .

[0233] Therefore, by FIG. 17A to FIG. 17E In the steps shown, the light emitting layer 106 is formed.

[0234] Please continue to refer to Fig.17F On the light source 112, a second material having a second refractive index is spin-coated to form a protective layer 132, and a groove of the light absorption layer is etched. Figure 17G .

[0235] Please refer to Figure 17G A light absorbing material is spin-coated on the protective layer 132 to form a light absorbing layer 134. Fig.17H .

[0236] Please refer to Fig.17H A third material having a third refractive index is spin-coated on the protective layer 132 and the light absorbing layer 134 to form a second light field control layer 228. Fig.17I .

[0237] Please refer to Fig.17IThe second light field control layer 228 is etched to form a fourth cavity 230. Fig.17J .

[0238] Please refer to Fig.17J A second material having a second refractive index is spin-coated on the second optical field control layer 228 and the fourth cavity 230 to fill the fourth cavity 230, and the second material is etched to form the third cavity 226. Figure 17K .

[0239] Please refer to Figure 17K A third material having a third refractive index is spin-coated on the second light field control layer 228 and the third cavity 226 to form the first light field control layer 224. Figure 17L .

[0240] Please refer to Figure 17L A second material having a second refractive index is spin-coated on the first light field control layer 224 and the fourth cavity 230 to form a connection layer 122 .

[0241] therefore, FIG. 17F to FIG. 17L , which can be used to form the light field control layer 208 .

[0242] Please refer to Fig.17M , flip the light field control layer 208 180 degrees and move it above the light emitting layer 106. Fig.17N .

[0243] Please refer to Fig.17N , the light field control layer 208 , the light collection layer 118 of the light emitting layer 106 and the second cavity 120 are connected to form the light emitting device 200 .

[0244] Therefore, by means of the above-mentioned light-emitting device 200, the shape of the emitted light field can be controlled. By reducing the light loss of the forward light from 40% to -20.3% and the ambient light reflection from 25% to 4.3%, the light emission efficiency can be greatly improved, the ambient light reflectivity can be reduced, and the light field emitted by the vehicle display can be more in line with the driving perspective.

[0245] In addition, if FIG. 17A to FIG. 17L As shown, the manufacturing process of the light emitting device is simple and can be completed by the existing semiconductor process, thereby improving the ability to be integrated with other component processes.

[0246] In summary, the light-emitting device provided by the present invention can control the optical field pattern emitted to meet the automotive display specifications, including compressing the light emitted in the vertical direction and extending the light emitted in the horizontal direction. On the other hand, it can improve the light emission efficiency and reduce the light loss of the forward light. And reduce the ambient light reflectivity. Therefore, in addition to the field pattern control, the efficiency of the forward luminance and the ambient light reflectivity are also taken into account.

[0247] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art may make various corresponding changes and modifications based on the present invention, but these corresponding changes and modifications should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. A light emitting device, characterized in that: include: A light source for emitting an illumination beam; The reflective layer has a first cavity, and the light source is located at the bottom surface of the first cavity; A light collecting layer, located above the reflective layer, having a second cavity, wherein a bottom surface of the second cavity is in contact with a top surface of the first cavity; A first light field control layer, located above the light collection layer, has a third cavity, wherein a bottom surface of the third cavity is opposite to a top surface of the second cavity; The second light field control layer is located above the first light field control layer and has a fourth cavity, wherein the bottom surface of the fourth cavity is connected to the top surface of the third cavity. The first cavity and the second cavity are combined into a lower cavity, The reflective layer comprises a first material having a first refractive index, the lower cavity comprises a second material having a second refractive index, and the light collecting layer comprises a third material having a third refractive index, wherein the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.

2. The light emitting device according to claim 1, characterized in that: The first material and the third material are the same material.

3. The light emitting device according to claim 1, characterized in that: The cross section of the lower cavity along a first direction perpendicular to the optical axis is hexagonal, and the cross section of the lower cavity along a second direction perpendicular to the optical axis and the first direction is hexagonal.

4. The light emitting device according to claim 1, characterized in that: The area of ​​the bottom surface of the second cavity is greater than the area of ​​the top surface of the second cavity.

5. The light emitting device according to claim 1, characterized in that: The material of the first light field control layer and the second light field control layer is the third material, and the material of the third cavity and the fourth cavity is the second material.

6. The light emitting device according to claim 1, characterized in that: The light emitting device further comprises: a connection layer located between the light collection layer and the first light field control layer, wherein the material of the connection layer is the second material.

7. The light emitting device according to claim 1, characterized in that: The cross section of the third cavity along a first direction perpendicular to the optical axis is trapezoidal, and the cross section of the third cavity along a second direction perpendicular to the optical axis and the first direction is rectangular.

8. The light emitting device according to claim 1, characterized in that: The cross section of the fourth cavity along a first direction perpendicular to the optical axis is trapezoidal, and the cross section of the fourth cavity along a second direction perpendicular to the optical axis and the first direction is rectangular.

9. The light emitting device according to claim 1, characterized in that: The area of ​​the top surface of the third cavity is smaller than the area of ​​the bottom surface of the third cavity, and the area of ​​the top surface of the fourth cavity is smaller than the area of ​​the bottom surface of the fourth cavity.

10. The light emitting device according to claim 1, characterized in that: The area of ​​the top surface of the third cavity is larger than the area of ​​the bottom surface of the third cavity, and the area of ​​the top surface of the fourth cavity is smaller than the area of ​​the bottom surface of the fourth cavity.

11. The light emitting device according to claim 1, characterized in that: The top surface of the third cavity has the same shape as the bottom surface of the fourth cavity.

12. The light emitting device according to claim 11, characterized in that: The third cavity and the fourth cavity are combined into an upper cavity, The cross section of the lower cavity along a first direction perpendicular to the optical axis is hexagonal, and the cross section of the lower cavity along a second direction perpendicular to the optical axis and the first direction is rectangular.

13. The light emitting device according to claim 1, characterized in that: Also includes: A light absorbing layer, wherein the light absorbing layer is disposed on the second light field control layer and has an opening at the top surface of the fourth cavity to expose the top surface of the fourth cavity.

14. The light emitting device according to claim 1, characterized in that: Also includes: An anti-reflection film, wherein the anti-reflection film is disposed on the top surface of the second light field control layer and covers the top surface of the fourth cavity.

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