Light-emitting device and display device

Abstract

The invention discloses a light-emitting device and a display device. The light-emitting device comprises a transparent layer, a plurality of light-emitting elements, a driving chip, a filling layer and a wiring layer. The plurality of light-emitting elements are arranged on the second surface of the transparent layer. The driving chip is arranged on the second surface of the transparent layer, the driving chip and the light-emitting elements are arranged at intervals, and the driving chip comprises a silicon semiconductor layer and an electrode layer. The filling layer is at least filled between the plurality of light-emitting elements and the driving chip; wherein the thickness of the filling layer is H1, the thickness of the silicon semiconductor layer of the driving chip is H2, and H1 is greater than or equal to H2. The wiring layer is arranged above the filling layer, the driving chip and the plurality of light-emitting elements and is electrically connected with the plurality of light-emitting elements and the driving chip respectively. Therefore, electric leakage caused by contact between the side wall of the driving chip and the wiring layer can be effectively prevented, the reliability of the light-emitting device is improved, and miniaturization of the device is facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a light-emitting device and a display device. Background Art

[0002] In recent years, new display technologies have been developing rapidly. For example, technologies such as OLED and MicroLED have received extensive research and attention. LED chips are widely used in display devices, vehicle lamps, general lighting, and other fields due to their high reliability, long life, and low power consumption. In addition, due to the advantage of low power consumption, LED has become the mainstream in the field of display technology.

[0003] At present, a single pixel unit used to form a display screen generally includes light-emitting chips for generating red light, blue light, and green light, respectively, and a driver chip for being electrically connected to these light-emitting chips. The driver chip controls these light-emitting chips so that the light-emitting device can generate different colors of light. However, since the existing light-emitting device encapsulates two chips, the driver chip and the light-emitting chip, the packaging structure is relatively complex. How to further improve the reliability of the light-emitting device and avoid device leakage has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] In view of the above shortcomings of the prior art, an object of the present invention is to provide a light emitting device and a display device to further improve the reliability of the light emitting device.

[0005] In order to achieve the above-mentioned object and other related objects, the present invention provides a light emitting device, comprising:

[0006] The transparent layer comprises a first surface and a second surface which are arranged opposite to each other, wherein the first surface is a light emitting surface;

[0007] A plurality of light emitting elements arranged at intervals are disposed on the second surface of the transparent layer;

[0008] A driving chip is disposed on the second surface of the transparent layer and is spaced apart from the plurality of light-emitting elements, wherein the driving chip comprises a silicon semiconductor layer and an electrode layer;

[0009] A filling layer, at least filled between the plurality of light-emitting elements and the driving chip;

[0010] The thickness of the filling layer is H1, the thickness of the silicon semiconductor layer of the driver chip is H2, and H1 is greater than or equal to H2;

[0011] The wiring layer is arranged above the filling layer, the driving chip and the plurality of light emitting elements, and is electrically connected to the plurality of light emitting elements and the driving chip respectively.

[0012] According to one aspect of the present invention, there is further provided a display device, comprising:

[0013] Display substrate;

[0014] At least one light emitting device is disposed on the display substrate, each light emitting device is electrically connected to the display substrate, and the light emitting device is the light emitting device mentioned above.

[0015] Compared with the prior art, the light emitting device and the display device of the present invention have at least the following beneficial effects:

[0016] The light-emitting device of the present invention comprises a transparent layer, a plurality of light-emitting elements, a driving chip, a filling layer and a wiring layer. The transparent layer comprises a first surface and a second surface arranged opposite to each other, and the first surface is a light-emitting surface. A plurality of light-emitting elements are arranged on the second surface of the transparent layer. The driving chip is arranged on the second surface of the transparent layer and is arranged at intervals from the plurality of light-emitting elements, and the driving chip comprises a silicon semiconductor layer and an electrode layer. The filling layer is at least filled between the plurality of light-emitting elements and the driving chip. The thickness of the filling layer is H1, the thickness of the silicon semiconductor layer of the driving chip is H2, and H1 is greater than or equal to H2. The wiring layer is arranged above the filling layer, the driving chip and the plurality of light-emitting elements, and is electrically connected to the plurality of light-emitting elements and the driving chip respectively. Therefore, the arrangement of the filling layer of the present invention can effectively prevent the side wall of the driving chip from contacting with the wiring layer to cause leakage, improve the reliability of the light-emitting device, and the arrangement of the filling layer will not affect the thickness of the light-emitting device, which is more conducive to the miniaturization of the device. In addition, the light-emitting element and the driving chip are arranged on the same layer, the preparation process is relatively simple, and the thickness of the light-emitting device as a whole can be further reduced, which is conducive to the miniaturization of the device.

[0017] The display device of the present invention includes the above-mentioned light-emitting device and also has the above-mentioned technical effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic diagram of a top view of the structure of a light emitting device in an embodiment of the present invention;

[0019] Figure 2a In one example of an embodiment of the present invention, Figure 1 A-A' section view;

[0020] Figure 2b for Figure 2a An enlarged view of point D in an example of FIG.

[0021] Figure 2c for Figure 2a An enlarged view of point D in an example of FIG.

[0022] Figure 3a In another example of an embodiment of the present invention, Figure 1 A-A' section view;

[0023] Figure 3b for Figure 3a The enlarged view of point D in the middle;

[0024] Figure 4a In another example of the embodiment of the present invention, Figure 1 A-A' section view;

[0025] Figure 4b for Figure 4a An enlarged view of point D in an example of FIG.

[0026] Figure 4c for Figure 4a An enlarged view of point D in an example of FIG.

[0027] Figure 5 In the embodiment of the present invention, Figure 1 The cross-section along the B-B' direction;

[0028] Figure 6 In the embodiment of the present invention, Figure 1 The cross-section along the C-C' direction;

[0029] Figure 7 A schematic diagram of the connection relationship between the pad and the underlying structure in an example of an embodiment of the present invention;

[0030] Figure 8 A schematic diagram of the connection relationship between the pad and the underlying structure in another example of an embodiment of the present invention;

[0031] Fig. 9 Schematic diagram of the connection relationship between the pad and the underlying structure in yet another example of an embodiment of the present invention.

[0032] List of reference numerals:

[0033] 100 Transparent Layer

[0034] 101 First Surface

[0035] 102 Second Surface

[0036] 110 First transparent layer

[0037] 120 Second transparent layer

[0038] 130 Light-shielding layer

[0039] 201 first light emitting element

[0040] 202 second light emitting element

[0041] 203 third light emitting element

[0042] 300 driver chip

[0043] 301 Silicon semiconductor layer

[0044] 302 electrode layer

[0045] 303 Driver chip insulation layer

[0046] 400 Filling Layers

[0047] 410 First filling layer

[0048] 420 Second filling layer

[0049] 501 pad wiring layer

[0050] 502 First connection wiring layer

[0051] 503 Second connection wiring layer

[0052] 600 Insulation

[0053] 701 First driving pad

[0054] 702 Second driving pad

[0055] 703 Third drive pad

[0056] 7041 First other pad

[0057] 7042 Second other pad

[0058] 7043 Third other pad DETAILED DESCRIPTION

[0059] The following specific embodiments illustrate the embodiments of the present invention, and those familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0060] It should be noted that the diagrams provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Although the diagrams only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component can be changed at will during actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that can be implemented in this application, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by the present invention.

[0061] In order to solve the above technical problems in the background technology, this embodiment further provides a light emitting device, which includes:

[0062] The transparent layer comprises a first surface and a second surface which are arranged opposite to each other, wherein the first surface is a light emitting surface;

[0063] A plurality of light emitting elements arranged at intervals are disposed on the second surface of the transparent layer;

[0064] A driving chip is disposed on the second surface of the transparent layer and is spaced apart from the plurality of light-emitting elements, wherein the driving chip comprises a silicon semiconductor layer and an electrode layer;

[0065] A filling layer, at least filled between the plurality of light-emitting elements and the driving chip;

[0066] The thickness of the filling layer is H1, the thickness of the silicon semiconductor layer of the driver chip is H2, and H1 is greater than or equal to H2;

[0067] The wiring layer is arranged above the filling layer, the driver chip and the plurality of light-emitting elements, and is electrically connected to the plurality of light-emitting elements and the driver chip. Thus, the arrangement of the filling layer in this embodiment can effectively prevent leakage from occurring when the side wall of the driver chip contacts the wiring layer, thereby improving the reliability of the light-emitting device. Furthermore, the light-emitting element and the driver chip are arranged in the same layer, the preparation process is relatively simple, and the thickness of the entire light-emitting device can be further reduced, which is conducive to the miniaturization of the device.

[0068] Optionally, the filling layer is disposed between adjacent light emitting elements, between any light emitting element and the driving chip, and around multiple light emitting elements and the driving chip, and the filling layer completely covers the side wall of the silicon semiconductor layer of the driving chip.

[0069] Optionally, the filling layer includes a first filling layer and a second filling layer formed at least on the first filling layer, the first filling layer covers a side wall of the silicon semiconductor layer of a portion of the driver chip, the second filling layer covers at least the side wall of the silicon semiconductor layer of the driver chip not covered by the first filling layer, the thickness of the first filling layer is H1a, the thickness of the second filling layer is H1b, H1a is less than H2, and H1a+H1b is greater than or equal to H2.

[0070] Optionally, the first filling layer and the second filling layer are made of the same material, or the first filling layer and the second filling layer are made of different materials.

[0071] Optionally, the second filling layer is formed on the first filling layer.

[0072] Optionally, the second filling layer is formed on the first filling layer and covers at least the outer contour of the driving chip.

[0073] Optionally, the wiring layer is formed on the second filling layer and covers the exposed surface and sidewall of the second filling layer, and the thickness of the second filling layer is smaller than the thickness of the wiring layer.

[0074] Optionally, the surface of the driver chip is flush with the surface of the filling layer; the surface of the driver chip is higher than the surface of the filling layer, exposing part of the side wall of the driver chip.

[0075] Optionally, the thickness difference between the light emitting element and the driving chip is ±5 μm.

[0076] Optionally, the driving chip further includes an insulating layer, the insulating layer is formed on the silicon semiconductor layer, the electrode layer is formed in the insulating layer, and the thickness of the insulating layer is between 2 μm and 10 μm.

[0077] Optionally, the thickness of the filling layer is greater than the thickness of the light emitting element, the thickness of the filling layer is greater than the thickness of the driving chip, and the thickness of the driving chip is greater than the thickness of the light emitting element.

[0078] Optionally, the filling layer contains a black light-absorbing material, which can prevent light emitted by adjacent light-emitting elements from interfering with each other, thereby improving the contrast of the light-emitting device.

[0079] Optionally, the light-emitting device further includes a shading layer, which is located between the driving chip and the transparent layer. In the light-emitting direction of the light-emitting device, the projection of the shading layer does not overlap with the projection of the multiple light-emitting elements, and the projection of the shading layer overlaps with the projection of the driving chip.

[0080] Optionally, the thickness of the driving chip is less than 20 μm, and the thickness of each light emitting element is less than 20 μm. Thus, the overall thickness of the light emitting device is smaller, which is more conducive to the miniaturization of the device.

[0081] Optionally, the length of the driving chip is less than 110 μm, and the width of the driving chip is less than 110 μm. The driving chip is small in size, which is conducive to forming a light-emitting device of smaller size.

[0082] Optionally, the transparent layer comprises:

[0083] First transparent layer;

[0084] The second transparent layer is arranged on the first transparent layer, and a plurality of light emitting elements and driving chips are arranged on the second transparent layer at intervals.

[0085] The plurality of light-emitting elements include a first light-emitting element, a second light-emitting element and a third light-emitting element. The first light-emitting element is a light-emitting element radiating blue light, the second light-emitting element is a light-emitting element radiating green light, and the third light-emitting element is a light-emitting element radiating red light.

[0086] The lighting device also includes:

[0087] The insulating layer covers the wiring layer, the filling layer, the three light-emitting elements and the driving chip. The insulating layer has a plurality of openings, and the openings expose a part of the surface of the wiring layer.

[0088] The lighting device also includes:

[0089] A plurality of pads are arranged at intervals, each pad being formed in a one-to-one correspondence in the opening portion and being electrically connected to the wiring layer exposed in the opening portion.

[0090] Optionally, the pad includes:

[0091] At least two driving pads, including a first driving pad and a second driving pad, the first driving pad drivingly connected to at least two light-emitting elements, and the second driving pad drivingly connected to at least a driving chip;

[0092] The other pads are electrically connected to other terminals of the driver chip.

[0093] Optionally, the at least two driving pads include:

[0094] A first driving pad is electrically connected to the first light emitting element and the second light emitting element;

[0095] The second driving pad is electrically connected to the third light emitting element and is electrically connected to the driving terminal of the driving chip. Driving the red light emitting element separately from the blue-green light emitting element can avoid the large difference between the driving voltage required by the red light emitting element and the driving voltage of the blue light emitting element and the green light emitting element. Driving the red light emitting element alone can avoid unnecessary power consumption caused by simultaneous driving, which is beneficial to saving energy consumption, and can also avoid damage to the light emitting element caused by mismatching driving voltages, which is beneficial to the reliability and service life of the light emitting element.

[0096] Optionally, the at least two driving pads include:

[0097] A first driving pad is electrically connected to the first light emitting element and the second light emitting element;

[0098] A second driving pad is electrically connected to the third light emitting element;

[0099] The third driving pad is electrically connected to the driving terminal of the driving chip. Since the driving voltage required by the red light emitting element is significantly different from the driving voltage of the blue light emitting element and the green light emitting element, driving the red light emitting element alone can avoid unnecessary power consumption caused by simultaneous driving, which is beneficial to saving energy consumption, and can also avoid damage to the light emitting element caused by mismatching driving voltages, which is beneficial to the reliability and service life of the light emitting element. The light emitting device includes six pads, and every three pads are evenly distributed on both sides of the light emitting device, which is beneficial to the uniformity and reliability of subsequent solid crystal.

[0100] Optionally, the at least two driving pads include:

[0101] A first driving pad is electrically connected to the first light emitting element, the second light emitting element and the third light emitting element;

[0102] The second driving pad is electrically connected to the driving terminal on the driving chip, thereby enabling the light emitting element and the driving chip to be driven separately, thus avoiding energy loss caused by inconsistent driving voltages between the light emitting element and the driving chip.

[0103] Optionally, the other pads include three pads, and the three pads are electrically connected to other different terminals on the driving chip respectively.

[0104] Optionally, the length of the light-emitting device is less than 500 μm, the width of the light-emitting device is less than 500 μm, and the thickness of the light-emitting device is less than 200 μm.

[0105] This embodiment also provides a display device, including:

[0106] Display substrate;

[0107] At least one light-emitting device is arranged on the display substrate, each light-emitting device is electrically connected to the display substrate, and the light-emitting device is the above-mentioned light-emitting device. The setting of the filling layer in the light-emitting device can effectively prevent the side wall of the driver chip from contacting with the wiring layer to cause leakage, improve the reliability of the light-emitting device, and the setting of the filling layer will not affect the thickness of the light-emitting device, which is more conducive to the miniaturization of the device. Furthermore, the light-emitting element is arranged on the same layer as the driver chip, the preparation process is relatively simple, and the overall thickness of the light-emitting device can also be reduced, which is conducive to reducing the package size.

[0108] The present invention is described in detail below with reference to specific embodiments.

[0109] Example 1

[0110] This embodiment provides a light emitting device, referring to Figure 1 , 2 or 3, the light-emitting device includes a transparent layer 100, a plurality of light-emitting elements, a driving chip 300, a filling layer 400 and a wiring layer.

[0111] Wherein, referring to Figure 2 or 3, the transparent layer 100 may have a light transmittance of more than 60% in the visible light range. The transparent layer 100 includes a first surface 101 and a second surface 102 arranged opposite to each other, and the first surface 101 is a light emitting surface, that is, the light emitted by the light emitting element is emitted outward through the first surface 101 of the transparent layer 100. The light emitting device needs to have a certain thickness for the convenience of client use, so the thickness of the transparent layer 100 is preferably greater than 10μm, and specifically preferably 30μm to 50μm, 50μm to 100μm or 100μm to 300μm. In the present embodiment, the transparent layer 100 includes a first transparent layer 101 and a second transparent layer 102, and the first transparent layer 101 is a transparent substrate. Optionally, the transparent substrate can be a light-transmitting substrate such as PET, glass, quartz, sapphire, transparent ceramics, etc. The second transparent layer 102 is an adhesive layer or a transfer layer, wherein the material of the second transparent layer 102 can be an elastic material such as silicone, so that the light-emitting element will be partially sunken into the second transparent layer 102 to keep the electrode surface of the light-emitting element at the same level, and the height difference of the light-emitting surface of each light-emitting element can be reduced, so that the light emitted from the side of the light-emitting element is absorbed by the filling layer 300 described below as much as possible, so as to improve the contrast of the light-emitting device. The thickness of the second transparent layer 102 is preferably 1μm to 15μm or 3μm to 10μm. If the thickness of the second transparent layer 102 is greater than 15μm, the alignment accuracy of the light-emitting element may be affected.

[0112] Reference Figure 6, a plurality of light-emitting elements arranged at intervals are arranged on the second surface 102 of the transparent layer 100. The light-emitting element in this embodiment mainly refers to a micrometer-level light-emitting diode, whose width or length ranges from 2 to 5 μm, 5 to 10 μm, 10 to 20 μm, 20 to 50 μm or 50 to 100 μm, and whose thickness ranges from 2 to 15 μm, preferably 5 to 10 μm. Specifically, each light-emitting element includes a semiconductor stack layer, and the semiconductor stack layer may include a first semiconductor layer, a second semiconductor layer arranged in sequence, and an active layer arranged therebetween, wherein the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the active layer is a multi-layer quantum well layer, which can provide red light or green light or blue light radiation. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the light-emitting element. On this basis, the light-emitting element may also include other functional structural layers that have an optimization effect on the performance of the light-emitting element.

[0113] In this embodiment, refer to Figure 6 The plurality of light emitting elements include a first light emitting element 201, a second light emitting element 202, and a third light emitting element 203. The first light emitting element 201, the second light emitting element 202, and the third light emitting element 203 radiate light of different wavelength ranges, respectively. For example, the first light emitting element 201 radiates blue light, the second light emitting element 202 radiates green light, and the third light emitting element 203 radiates red light. In one embodiment, different light emitting elements may have different semiconductor stacking layers, so as to directly radiate light of different wavelength ranges. The specific material of the semiconductor stacking layer is selected according to the wavelength of the radiated light, and includes but is not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum gallium indium phosphide, gallium nitride, indium gallium nitride, zinc selenide, or gallium phosphide. In another embodiment, different light-emitting elements may have the same semiconductor stacking layer, for example, the semiconductor stacking layers in the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 all radiate blue light, and a wavelength conversion layer is provided on the light-emitting surface of the second light-emitting element 202 to convert the radiated blue light into green light, and a wavelength conversion layer is provided on the light-emitting surface of the third light-emitting element 203 to convert the radiated blue light into red light. Each light-emitting element further includes a first electrode and a second electrode. The semiconductor stacking layer has a table surface exposing the first semiconductor layer, the first electrode is formed on the table surface and electrically connected to the first semiconductor layer, and the second electrode is formed on the second semiconductor layer and electrically connected to the second semiconductor layer.

[0114] Referring to Figures 2, 3 or 5, the driver chip 300 is arranged on the second surface 102 of the transparent layer 100 and is spaced apart from a plurality of light-emitting elements. The driver chip 300 is used to process data signals of the controller and the pixel points. A plurality of terminals are arranged on the surface of the driver chip 300, and each light-emitting element is electrically connected to different terminals on the driver chip 300 through a wiring layer. In the present embodiment, the number of terminals is 7. Among them, three terminals are electrically connected to three light-emitting elements through a wiring layer, respectively, to control the switching of the three light-emitting elements. Optionally, the driver chip 300 is an active driver IC chip. The use of an active driver IC chip can improve the display quality of the light-emitting device, and can be driven at a lower driving voltage, thereby increasing the service life of the display device.

[0115] The driver chip 300 can be clearly seen from the light-emitting surface of the light-emitting device, and the display of the driver chip 300 on the light-emitting surface will also affect the light emission or display effect of the entire light-emitting device. Figure 5 The light shielding layer 130 is disposed between the driver chip 300 and the transparent layer 100, or between the first transparent layer 101 and the second transparent layer 102. In the light emitting direction of the light emitting device, the projection of the light shielding layer 130 does not overlap with the projections of the multiple light emitting elements, and the projection of the light shielding layer 130 overlaps with the projection of the driver chip 300. Thus, the light shielding layer 300 can shield the display of the driver chip 300 on the light emitting surface, thereby preventing the driver chip 300 from affecting the display of the light emitting device.

[0116] Optionally, the positions of the driver chip 300 and the light-emitting elements on the transparent layer 100 can be arbitrary, as long as they do not affect the arrangement of other structures. In this embodiment, the driver chip 300 is arranged at the center of the transparent layer 100, and the three light-emitting elements are arranged on one side of the driver chip 300 as a light-emitting part. In order to avoid the driver chip 300 being too large in size and occupying too much space of the entire light-emitting device, which affects the light output of the light-emitting part. The size of the driver chip 300 is between about 1μm and 110μm. It should be noted that the size of the driver chip 300 refers to the length or width of the driver chip. Specifically, the size of the driver chip 300 can be 5μm, 10μm, 20μm, 50μm, 70μm or 100μm. In order to facilitate the transfer of the driving chip 300 and the light-emitting element to the transparent layer 100, the difference in thickness between the driving chip 300 and the light-emitting element is less than 50 μm, for example, less than 25 μm, or less than 15 μm, which can effectively improve the transfer yield of the driving chip 300 and the light-emitting element to the transparent layer 100. Optionally, the thickness of the driving chip 300 is greater than the thickness of the light-emitting element, and the thickness of the driving chip 300 is less than or equal to 5 times the thickness of the light-emitting element. If the thickness of the driving chip 300 is much greater than the thickness of the chip, it is not conducive to the preparation of the stacked structure subsequently formed above the two. Optionally, the thickness of the driving chip 300 is less than 20 μm, and the thickness of each light-emitting element is less than 20 μm, for example, less than 10 μm. Placing a smaller driving chip on the same layer with multiple light-emitting elements is more conducive to the miniaturization of the device.

[0117] Reference Figure 2b , Figure 2c or Figure 3b The driver chip 300 includes a silicon semiconductor layer 301 and an electrode layer 302 formed in the silicon semiconductor layer 301 and exposed on the surface of the silicon semiconductor layer 301. At this time, the sidewalls of the silicon semiconductor layer 301 and the surface of the silicon semiconductor layer 301 are not covered with insulating materials or the insulating materials are very thin, which is easy to cause leakage. Figure 4b or Figure 4c The driver chip 300 includes a silicon semiconductor layer 301, a driver chip insulating layer 303 formed on the surface of the silicon semiconductor layer 301, and an electrode layer 302 formed in the driver chip insulating layer 303 and exposed on the surface of the insulating layer 303. At this time, since the sidewalls of the silicon semiconductor layer 301 of the driver chip 300 are not covered with insulating materials, leakage is easily caused. Optionally, the thickness of the driver chip insulating layer 303 is between 2μm and 10μm, for example, 2μm to 6μm.

[0118] In one example, refer to Figure 2a and Figure 2bA filling layer 400 is provided between adjacent light-emitting elements, between adjacent light-emitting elements and driver chips 300, and around the light-emitting elements or driver chips 300. The provision of the filling layer 400 can prevent color mixing or light interference between adjacent light-emitting elements, thereby improving the contrast of the light-emitting device; on the other hand, it can completely cover the side wall of the driver chip 300, preventing the side wall of the driver chip 300 from contacting with the upper wiring layer, causing leakage of the side wall of the driver chip 300. In this embodiment, the driver chip 300 is flush with or lower than the surface of the filling layer 400, and there will be no leakage caused by the side wall of the silicon semiconductor layer 301 of the driver chip 300 contacting with the wiring layer formed subsequently. In this example, the driver chip 300 does not include a driver chip insulating layer 303.

[0119] The filling layer 400 is provided as a black glue layer that absorbs light and has the function of electrical insulation. Specifically, the filling layer 400 can be a component formed by dispersing a black filling component with a particle size not greater than 1 μm in a transparent or translucent material such as silica gel, epoxy resin, polyimide, low-temperature glass, polysiloxane, polysilazane, etc. The black filling component in the filling layer 400 includes but is not limited to carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder, etc. The particle size range of the black filling component is preferably 10 to 100 nm, or 100 to 200 nm, or 200 to 300 nm, or 300 nm to 500 nm. The filling layer 400 can also use a black dye.

[0120] There is a difference between the thickness of the driver chip 300 and the thickness of the light-emitting element. If the difference between the thickness of the driver chip 300 and the thickness of the light-emitting element is within ±2μm, the thickness of the two is deemed to be equal in the present invention. In the present embodiment, the difference in thickness between the light-emitting element and the driver chip 300 is ±5μm. When the filling layer 400 is formed between the light-emitting element and the driver chip 300, it is difficult to control the surface of the driver chip 300 to be flush with the thickness of the filling layer 400. In many cases, the surface of the driver chip 300 will be higher than the surface of the filling layer 400. If the raised side wall of the driver chip 300 includes part of the side wall of the silicon semiconductor layer 310, since the side wall of the silicon semiconductor layer 310 is not covered by the filling layer 400, it will form contact with the wiring layer formed subsequently, causing leakage of the side wall of the driver chip 300.

[0121] In order to solve the above technical problem, in another example of this embodiment, referring to Figure 2cThe filling layer 400 in this embodiment includes a first filling layer 410 and a second filling layer 420. After the first filling layer 410 is formed, the thickness of the first filling layer 410 is less than the thickness of the silicon semiconductor layer 301 of the driver chip 300, so that part of the sidewall of the silicon semiconductor layer 301 is exposed, which easily leads to leakage. In this embodiment, the second filling layer 420 is further formed on the first filling layer 410. The sum of the thickness H1b of the second filling layer 420 and the thickness H1a of the first filling layer 410 is greater than or equal to the thickness H2 of the silicon semiconductor layer of the driver chip 300, thereby being able to completely cover the sidewall of the silicon semiconductor layer 301, avoiding the leakage problem caused by the exposure of the sidewall of the silicon semiconductor layer. In another example, referring to Figure 3a and 3b The second filling layer 420 is formed on the first filling layer 410 and at least partially covers the outer contour of the driver chip 300. The partial coverage mentioned here means at least covering the overlapping part of the driver chip 300 and the lower wiring layer. Thus, the second filling layer 420 can well cover the side wall of the driver chip 300 to avoid the leakage caused by the electrical contact with the lower wiring layer due to the incomplete side wall covering. In order to simplify the process of making the second filling layer 420 and reduce the difficulty of making it, refer to Figure 5 or Figure 7 In this embodiment, the second filling layer 420 completely covers the outer contour of the driver chip 300. Figure 7 The outline of the second filling layer 420 is the same as the outer outline of the driver chip 300, and is only formed at the edge of the outline of the driver chip 300, with a hollow center. Generally, the first filling layer 410 is a black light-absorbing layer, which can prevent color mixing or light interference between adjacent light-emitting elements, thereby improving the contrast of the light-emitting device. Optionally, the material of the second filling layer 420 is the same as that of the first filling layer 400, and both are light-absorbing adhesive layers. Of course, the material of the second filling layer 420 can also be other materials that can achieve electrical insulation, such as silicon oxide or silicon nitride. In order to reduce the thickness of the light-emitting device, refer to Figure 3a or Figure 3b The wiring layer is formed on the second filling layer 420 and covers the exposed surface of the second filling layer 420 and the sidewall of the second filling layer 420, thereby avoiding the influence of the second filling layer 420 on the overall thickness of the light-emitting device. The thickness of the second filling layer 420 is less than the thickness of the wiring layer to avoid its influence on the overall thickness of the light-emitting device, and at the same time avoid its influence on the thickness of the wiring layer, affecting the conductive performance of the wiring layer, and improving the reliability and service life of the device. In the above examples, the driver chip 300 does not include the driver chip insulation layer 303.

[0122] In one example, refer to Figure 4a , 4b4c, the driver chip 300 includes a silicon semiconductor layer 301, a driver chip insulating layer 303 formed on the surface of the silicon semiconductor layer 301, and an electrode layer 302 formed in the driver chip insulating layer 303 and exposed on the surface of the insulating layer 303. At this time, since the side wall of the silicon semiconductor layer 301 of the driver chip 300 is not covered with insulating material, leakage is likely to occur. Figure 4b The thickness of the filling layer 400 is equal to or greater than the thickness of the silicon semiconductor layer 301 of the driving chip 300, and thus the sidewall of the silicon semiconductor layer 301 can be covered. Figure 4c When the thickness H1a of the first filling layer 410 is less than the thickness H2 of the silicon semiconductor layer 301 of the driving chip 300 , a second filling layer 420 may be formed above the first filling layer 410 to cover the thickness of the silicon semiconductor layer 301 of the driving chip 300 .

[0123] The thickness of the filling layer 400 may be greater than the thickness of the light emitting element and the driver chip 300, or less than the thickness of the light emitting element and the driver chip 300, or equal to the thickness of the light emitting element or the driver chip 300. Optionally, the thickness of the filling layer 400 may be greater than the thickness of the light emitting element and greater than the thickness of the driver chip 300.

[0124] Reference Figure 2a , Figure 3a , Figure 4a , Figure 5 and Figure 6 , and combined with Figure 7 , the wiring layer is arranged above the filling layer 400, the driving chip 300 and the plurality of light-emitting elements, and is electrically connected to the plurality of light-emitting elements and the driving chip 300, respectively, and is electrically connected to the driving chip 300 and the plurality of light-emitting elements. The wiring layer includes a pad wiring layer 501, a first connection wiring layer 502 and a second connection wiring layer 503 arranged in the same layer. Among them, the pad wiring layer 501 is arranged directly below the pad formed subsequently, and is used to connect the pad. The number of the pad wiring layer 501 corresponds to the number of the pad. One end of the first connection wiring layer 502 is connected to the pad wiring layer 501, and the other end is connected to the light-emitting element or the driving chip 300. The number of the first connection wiring layer 502 also corresponds to the number of the pad. One end of the second connection wiring layer 503 is electrically connected to the light-emitting element, and the other end is electrically connected to the driving chip 300.

[0125] 3 to 6, the insulating layer 600 covers the wiring layer, and the wiring layer and part of the filling layer 400 are formed in the insulating layer 600. The insulating layer 600 can be any insulating material, such as silicon dioxide or silicon nitride, and can also be formed of materials such as epoxy resin, polysiloxane or photoresist to prevent the wiring layer from being oxidized and to electrically isolate different wirings to prevent leakage failure of the light-emitting device.

[0126] Reference Figure 1 or 7, a plurality of pads arranged at intervals are electrically connected to the wiring layer, and extend from the connection end with the wiring layer through the insulating layer 600 and are exposed on the surface of the insulating layer 600. In this embodiment, refer to Figure 1 , the pads include at least two driving pads and other pads 704, the at least two driving pads are respectively a first driving pad 701 and a second driving pad 702, the first driving pad 701 drives and connects at least two light-emitting elements, and the second driving pad 702 drives and connects at least the driving chip 300. The number of other pads 704 is three, namely a first other pad 7041, a second other pad 7042 and a third other pad 7043. Among them, the three other pads 704 are electrically connected to other different terminals on the driving chip 300 respectively. The first other pad 7041 (Row / Clk) and the second other pad 7042 (Col / Data) are grounded by inputting data signals and timing signals to the driving chip 300, and the third other pad 7043 (Gnd) is electrically connected to the driving chip 300.

[0127] In one example, refer to Figure 7 , at least two driving pads include a first driving pad 701 and a second driving pad 702. The first driving pad 701 (VGB) is electrically connected to the first light-emitting element 201 and the second light-emitting element 202, and a driving voltage is input thereto. The second driving pad 702 (VR) is electrically connected to the third light-emitting element 203 and the driving chip 300, so as to input a driving voltage to the third light-emitting element 203 and the driving chip 300 at the same time, and the light-emitting device causes the light-emitting element to emit light with a specific brightness based on the driving voltage. The first light-emitting element 201 and the second light-emitting element 202 are respectively a blue light-emitting element and a green light-emitting element, and the third light-emitting element 203 is a red light-emitting element. Since the driving voltage required for the red light-emitting element is greatly different from the driving voltage of the blue light-emitting element and the green light-emitting element, driving the red light-emitting element alone can avoid unnecessary power consumption caused by simultaneous driving, which is beneficial to energy saving, and can also avoid damage to the light-emitting element caused by mismatching of the driving voltage, which is beneficial to the reliability and service life of the light-emitting element.

[0128] In another example, referring to Figure 8, at least two driving pads include a first driving pad 701, a second driving pad 702 and a third driving pad 703. The first driving pad 701 (VGB) is electrically connected to the first light-emitting element 201 and the second light-emitting element 202, and a driving voltage is input thereto. The second pad is electrically connected to the driving chip 300 to input a driving voltage to the driving chip 300. The third driving pad 703 (VR) is electrically connected to the third light-emitting element 203 to input a driving voltage separately to the third light-emitting element 203. Since the red light-emitting element is driven separately by the third driving pad 703, unnecessary power consumption caused by simultaneous driving can be avoided, which is beneficial to energy saving, and damage to the light-emitting element caused by mismatching of the driving voltage can be avoided, which is beneficial to the reliability and service life of the light-emitting element. The light-emitting device in this embodiment includes six pads, and every three pads are evenly distributed on both sides of the light-emitting device, which is beneficial to the uniformity and reliability of subsequent solid crystal.

[0129] In yet another example, referring to Fig. 9 , at least two driving pads include a first driving pad 701 and a second driving pad 702. The first driving pad 701 (VGB) is electrically connected to the first light-emitting element 201, the second light-emitting element 202 and the third light-emitting element 203, and a driving voltage is input thereto. The second driving pad 702 is electrically connected to the driving chip 300 to input a driving voltage to the driving chip 300. Thus, the present embodiment can realize the separate driving of the light-emitting element and the driving chip 300, and avoid energy loss caused by inconsistent driving voltages of the light-emitting element and the driving chip 300.

[0130] In one example, not shown in the figure, in order to make the structure of the light-emitting device more compact and reduce the cost, the top view of the light-emitting device is a rectangle, including a long side and a short side. The multiple light-emitting elements are arranged along the short side direction of the light-emitting device. The top view of the driver chip is also a rectangle, and the long side direction of the driver chip is consistent with the long side direction of the light-emitting device.

[0131] Example 2

[0132] This embodiment provides a display device, which includes a display substrate and at least one light-emitting device disposed on the display substrate. The light-emitting device is the light-emitting device in Embodiment 1.

[0133] Specifically, the pad of each light emitting device is electrically connected to the display substrate, and the light emitting surface of the light emitting device is away from the display substrate. When there are more than two light emitting devices, more than two light emitting devices are arranged at intervals on the display substrate, and each light emitting device is electrically connected to the display substrate.

[0134] The display device in this embodiment includes the light-emitting device in the above-mentioned embodiment 1. The setting of the filling layer in the light-emitting device can effectively prevent the side wall of the driver chip from contacting with the wiring layer to cause leakage, thereby improving the reliability of the light-emitting device. In addition, the setting of the filling layer will not affect the thickness of the light-emitting device, which is more conducive to the miniaturization of the device. Furthermore, the light-emitting element and the driver chip are arranged in the same layer, the preparation process is relatively simple, and the overall thickness of the light-emitting device can also be reduced, which is conducive to reducing the package size.

[0135] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting device, characterized in that: include: The transparent layer comprises a first surface and a second surface which are arranged opposite to each other, wherein the first surface is a light emitting surface; A plurality of light-emitting elements arranged at intervals are disposed on the second surface of the transparent layer; A driving chip is disposed on the second surface of the transparent layer and is spaced apart from the plurality of light emitting elements, wherein the driving chip comprises a silicon semiconductor layer and an electrode layer; A filling layer, at least filled between the plurality of light emitting elements and the driving chip; The thickness of the filling layer is H1, the thickness of the silicon semiconductor layer of the driver chip is H2, and H1 is greater than or equal to H2; The wiring layer is disposed above the filling layer, the driving chip and the plurality of light emitting elements, and is electrically connected to the plurality of light emitting elements and the driving chip respectively.

2. The light emitting device according to claim 1, characterized in that: The filling layer is disposed between adjacent light emitting elements, between any light emitting element and the driving chip, and around the plurality of light emitting elements and the driving chip. The filling layer completely covers the side wall of the silicon semiconductor layer of the driving chip.

3. The light emitting device according to claim 1, characterized in that: The filling layer includes a first filling layer and a second filling layer formed at least on the first filling layer, the first filling layer covers a portion of the side walls of the silicon semiconductor layer of the driver chip, the second filling layer covers at least the side walls of the silicon semiconductor layer of the driver chip not covered by the first filling layer, the thickness of the first filling layer is H1a, the thickness of the second filling layer is H1b, H1a is less than H2, and H1a+H1b is greater than or equal to H2.

4. The light emitting device according to claim 3, characterized in that: The first filling layer and the second filling layer are made of the same material, or the first filling layer and the second filling layer are made of different materials.

5. The light emitting device according to claim 3, characterized in that: The second filling layer is formed on the first filling layer.

6. The light emitting device according to claim 3, characterized in that: The second filling layer is formed on the first filling layer and at least covers the outer contour of the driving chip.

7. The light emitting device according to claim 3, characterized in that: The wiring layer is formed on the second filling layer and covers the exposed surface and sidewall of the second filling layer. The thickness of the second filling layer is smaller than the thickness of the wiring layer.

8. The light emitting device according to claim 1, characterized in that: The surface of the driving chip is flush with the surface of the filling layer; or the surface of the driving chip is higher than the surface of the filling layer, exposing a portion of the side wall of the driving chip.

9. The light emitting device according to claim 1, characterized in that: The difference between the thickness of the light emitting element and the thickness of the driving chip is ±5 μm.

10. The light emitting device according to claim 1, characterized in that: The driving chip further comprises a driving chip insulating layer, wherein the driving chip insulating layer is formed on the silicon semiconductor layer, the electrode layer is formed in the insulating layer, and the thickness of the insulating layer is between 2 μm and 10 μm.

11. The light emitting device according to claim 1, characterized in that: The thickness of the filling layer is greater than the thickness of the light emitting element, the thickness of the filling layer is greater than the thickness of the driving chip, and the thickness of the driving chip is greater than the thickness of the light emitting element.

12. The light emitting device according to claim 1, characterized in that: The filling layer contains black light absorbing material.

13. The light emitting device according to claim 1, characterized in that: The light-emitting device also includes a shading layer, which is located between the driving chip and the transparent layer; in the light emitting direction of the light-emitting device, the projection of the shading layer does not overlap with the projection of the multiple light-emitting elements, and the projection of the shading layer overlaps with the projection of the driving chip.

14. The light emitting device according to claim 1, characterized in that: The transparent layer comprises: First transparent layer; A second transparent layer is disposed on the first transparent layer, and the plurality of light emitting elements and the driving chip are disposed on the second transparent layer at intervals; The plurality of light-emitting elements include a first light-emitting element, a second light-emitting element and a third light-emitting element, wherein the first light-emitting element is a light-emitting element radiating blue light, the second light-emitting element is a light-emitting element radiating green light, and the third light-emitting element is a light-emitting element radiating red light; The light emitting device further comprises an insulating layer, the insulating layer covers the wiring layer, the filling layer, the three light emitting elements and the driving chip, the insulating layer has a plurality of openings, and the openings expose a portion of the surface of the wiring layer; The light emitting device further includes a plurality of pads arranged at intervals, each of the pads being formed in the opening in a one-to-one correspondence and forming an electrical connection with the wiring layer exposed in the opening.

15. The light emitting device according to claim 14, characterized in that: The pad comprises: At least two driving pads, including a first driving pad and a second driving pad, wherein the first driving pad is drivingly connected to at least two light-emitting elements, and the second driving pad is drivingly connected to at least the driving chip; Other pads are electrically connected to other terminals of the driving chip.

16. The light emitting device according to claim 15, characterized in that: The at least two driving pads include: A first driving pad, electrically connected to the first light emitting element and the second light emitting element; The second driving pad is electrically connected to the third light emitting element and to the driving terminal of the driving chip.

17. The light emitting device according to claim 15, characterized in that: The at least two driving pads include: A first driving pad, electrically connected to the first light emitting element and the second light emitting element; A second driving pad, electrically connected to the third light emitting element; The third driving pad is electrically connected to the driving terminal of the driving chip.

18. The light emitting device according to claim 15, characterized in that: The at least two driving pads include: A first driving pad is electrically connected to the first light emitting element, the second light emitting element and the third light emitting element; The second driving pad is electrically connected to the driving terminal on the driving chip.

19. The light emitting device according to claim 15, characterized in that: The other pads include three pads, and the three pads are electrically connected to other different terminals on the driving chip respectively.

20. The light emitting device according to claim 1, characterized in that: The length of the light-emitting device is less than 500 μm, the width of the light-emitting device is less than 500 μm, and the thickness of the light-emitting device is less than 200 μm.

21. A display device, characterized in that: include: Display substrate; At least one light-emitting device is disposed on the display substrate, each of the light-emitting devices is electrically connected to the display substrate, and the light-emitting device is the light-emitting device according to any one of claims 1 to 20.

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