Display device and method of manufacturing same

Abstract

A display device and a method of manufacturing the same are provided. The display device includes a substrate including a first display area and a second display area, the first display area including first pixels and the second display area including second pixels and a transmissive area; a first pixel electrode and a first emission layer in the first pixel; a second pixel electrode and a second emission layer in the second pixel; a counter electrode disposed integrally in the first display area and the second display area; and a top layer disposed on the counter electrode, in which the counter electrode and the top layer each have an opening region corresponding to the transmission region, and in which a convex portion is located around the transmission region, the convex portion protruding in a top surface direction of the substrate.

Description

[0001] This application is a divisional application of application No. 202010400630.3, entitled “Display device and method for manufacturing the display device”, filed with the State Intellectual Property Office of China on May 13, 2020. Technical Field

[0002] Aspects of the present disclosure relate to a display device. Background Art

[0003] Recently, the purpose of use of display devices has become more diverse. For example, as display devices have become thinner and lighter, their scope of use has gradually expanded. In addition, the functions that can be combined or associated with display devices are increasing over time.

[0004] Since the display device may be used in various ways, there may be various methods in designing the shape of the display device. Summary of the invention

[0005] Aspects of some embodiments relate to a display device comprising a second display area inside a first display area, a sensor arranged in the second display area, etc. However, it should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting the disclosure.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

[0007] According to some embodiments, a display device is provided, comprising: a substrate, comprising a first display area and a second display area, the first display area comprising a first pixel, and the second display area comprising a second pixel and a transmission area; a first pixel electrode and a first emission layer, located in the first pixel; a second pixel electrode and a second emission layer, located in the second pixel; a counter electrode, arranged as a whole in the first display area and the second display area; and a top layer, arranged on the counter electrode, wherein the counter electrode and the top layer both have an opening area corresponding to the transmission area, and wherein a convex portion is located around the transmission area, and the convex portion protrudes in the direction of the top surface of the substrate.

[0008] In some embodiments, the protrusion is part of the top layer.

[0009] In some embodiments, the display device further includes: an organic functional layer located between the first pixel electrode and the counter electrode, wherein the organic functional layer corresponds to the transmission area.

[0010] In some embodiments, a plurality of protrusion patterns are located on a top surface of the organic functional layer.

[0011] In some embodiments, the plurality of protrusion patterns are separated from each other at set intervals, and each of the plurality of protrusion patterns extends in one direction.

[0012] In some embodiments, the display device further includes: a second thin film transistor located in the second display area; and a bottom electrode layer located between the substrate and the second thin film transistor.

[0013] In some embodiments, the display device further includes: a pixel defining layer exposing a central portion of each of the first pixel electrode and the second pixel electrode and covering an edge of each of the first pixel electrode and the second pixel electrode, wherein the pixel defining layer includes a first opening corresponding to the transmission area.

[0014] In some embodiments, the display device further includes: a planarization layer located between the substrate and the pixel defining layer, wherein the planarization layer includes a second opening corresponding to the transmission area.

[0015] In some embodiments, a width of the first opening is smaller than a width of the second opening.

[0016] In some embodiments, the display device further includes: an inorganic insulating layer disposed on the substrate, wherein the inorganic insulating layer includes a third opening corresponding to the transmission area.

[0017] In some embodiments, a width of the opening region is smaller than a width of the third opening.

[0018] In some embodiments, the first display area and the second display area are sealed by an encapsulation substrate facing the substrate.

[0019] In some embodiments, the display device further includes: a thin film encapsulation layer including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on a top layer.

[0020] According to some embodiments, a display device is provided, comprising: a substrate comprising pixels and a transmission area, the pixels comprising display elements; pixel electrodes and an emission layer located in the pixels; a counter electrode located on the emission layer; and a top layer located on the counter electrode, wherein the counter electrode and the top layer both have an opening corresponding to the transmission area, and wherein the top layer comprises a convex portion, the convex portion is adjacent to the transmission area and is thicker than its surrounding thickness.

[0021] In some embodiments, the display device further includes: an organic functional layer located between the pixel electrode and the counter electrode, wherein the organic functional layer corresponds to the transmission area.

[0022] In some embodiments, a plurality of protrusion patterns are located on a top surface of the organic functional layer.

[0023] According to some embodiments, a method for manufacturing a display device is provided, wherein the display device includes a substrate, the substrate including a first display area and a second display area, the first display area including a first pixel, and the second display area including a second pixel and a transmission area, the method including: forming a counter electrode and a top layer in the first display area and the second display area above a top surface of the substrate; irradiating a laser having an infrared wavelength to an area of ​​the counter electrode corresponding to the transmission area from the back side of the substrate; and forming an opening area in the counter electrode and the top layer by peeling off the area of ​​the counter electrode to which the laser is irradiated from the substrate.

[0024] In some embodiments, the top layer includes protrusions around the transmissive region, the protrusions being formed by laser.

[0025] In some embodiments, the wavelength of the laser light is from about 1000 nm to about 1100 nm.

[0026] In some embodiments, the absorptivity of the layers arranged from the substrate to the counter electrode with respect to laser light is 20% or less.

[0027] In some embodiments, the method further includes: providing an organic functional layer corresponding to the transmission area, wherein the organic functional layer includes a protrusion pattern formed by laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] These and / or other aspects will become apparent and more easily understood through the following description of the embodiments in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view of a display device according to an example embodiment; Figure 2 is a cross-sectional view of a display device according to some example embodiments; Figure 3A-3B is a plan view of a display panel according to an example embodiment; Figure 4A is an equivalent circuit diagram of a pixel that may be arranged in a first display area and / or a second display area of ​​a display device according to example embodiments; Figure 4B is an equivalent circuit diagram of a pixel that may be arranged in a first display area and / or a second display area of ​​a display device according to another example embodiment; Figure 5 yes Figure 3A a plan view of a portion of a second display area; Fig. 6A It is along Figure 3A The line I-I' and Figure 5 A cross-sectional view of the display device taken along line II-II'; Figure 6B yes Fig. 6AAn enlarged view of region III; 7A to 7C is a cross-sectional view of a method of manufacturing a display device according to an example embodiment; Fig. 8A is a cross-sectional view of a display device according to another example embodiment; Figure 8B is a cross-sectional view of a display device according to another example embodiment; Figure 8C is a plan view of a display device according to another example embodiment; Fig. 9 is a cross-sectional view of a display device according to another example embodiment; Fig.10 is a cross-sectional view of a display device according to another example embodiment; Fig.11 is a cross-sectional view of a display device according to another example embodiment; Fig.12 is a cross-sectional view of a display device according to another example embodiment; Fig.13 is a cross-sectional view of a display device according to another example embodiment; and Figure 14A-14B is an image around the transmissive region captured after peeling off the counter electrode. DETAILED DESCRIPTION

[0029] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein like reference numerals always denote like elements. In this regard, the embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain aspects of this specification.

[0030] Since the disclosure allows various changes and many embodiments, the example embodiments will be shown in the drawings and described in detail in the written description. When referring to the embodiments described with reference to the drawings, the effects and characteristics disclosed and the methods for achieving these will be obvious. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the example embodiments set forth herein.

[0031] Hereinafter, the disclosure will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are shown. When describing with reference to the accompanying drawings, the same reference numerals in the drawings represent the same or corresponding elements, and their repeated description may be omitted.

[0032] For the convenience of explanation, the size of the elements in the drawings may be exaggerated. In other words, since the size and thickness of the components in the drawings are arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.

[0033] When a specific embodiment can be implemented differently, the specific process order can be performed differently from the described order. For example, two consecutively described processes can be performed substantially simultaneously or in the reverse order of the described order.

[0034] Figure 1 is a perspective view of a display device 1 according to the embodiment.

[0035] Reference Figure 1 The display device 1 includes a first display area DA displaying an image and a first non-display area NDA not displaying an image. The display device 1 may display an image by using light emitted from a plurality of first pixels Pm arranged in the first display area DA.

[0036] The display device 1 includes a second display area SA. Figure 2 As described, the second display area SA may include an area in which a component such as a sensor using infrared light, visible light or sound is arranged in its lower portion. The second display area SA may include a transmission area TA, which can transmit light and / or sound output from the component to the outside or traveling from the outside toward the component. In an embodiment, when infrared light passes through the second display area SA, the transmittance may be 30% or more, more preferably, 50% or more, 75% or more, 80% or more, 85% or more, or 90% or more.

[0037] In the present embodiment, a plurality of second pixels Pa may be arranged in the second display area SA. The display device 1 may display a set or predetermined image by using light emitted from the second pixels Pa. The image displayed on the second display area SA is an auxiliary image and may have a resolution lower than that of the image displayed on the first display area DA. That is, since the second display area SA includes a transmissive area TA that may transmit light and / or sound, the number of second pixels Pa that may be arranged per unit area may be less than the number of first pixels Pm that may be arranged per unit area in the first display area DA.

[0038] The second display area SA may be arranged on one side of the first display area DA. Figure 1 It is shown that the second display area SA is arranged on the first display area DA, and the second display area SA is arranged between the first non-display area NDA and the first display area DA. However, the embodiment is not limited thereto. For example, the second display area SA may be surrounded by the first display area DA. Various suitable modifications may be made.

[0039] Although the display device 1 according to the embodiment is described as an organic light emitting display device as an example, the display device 1 according to the present disclosure is not limited thereto. In another embodiment, various suitable display devices such as an inorganic light emitting display device and a quantum dot light emitting display device may be used.

[0040] although Figure 1 2 shows that the second display area SA is arranged on the first display area DA having a quadrilateral shape, but the embodiment is not limited thereto. For example, the shape of the first display area DA may include a circle, an ellipse, or a polygon such as a triangle or a pentagon. The position and number of the second display area SA may be variously changed in a suitable manner.

[0041] Figure 2 is a cross-sectional view of a display device 1 according to an embodiment, and can be compared with Figure 1 Corresponding to the cross section taken by line A-A'.

[0042] Reference Figure 2 The display device 1 may include a display panel 10 including a display element and a component 20 corresponding to the second display area SA.

[0043] The display panel 10 may include a substrate 100, a display element layer 200, and a thin film encapsulation layer 300, wherein the display element layer 200 is disposed above the substrate 100, and the thin film encapsulation layer 300 serves as a sealing member to seal the display element layer 200. In addition, the display panel 10 may further include an insulating layer IL′ disposed above the substrate 100 and a lower protective film 175 disposed below the substrate 100.

[0044] The substrate 100 may include glass or a polymer resin. The polymer resin may include polyethersulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyallylate, polyimide (PI), polycarbonate (PC) and / or cellulose acetate propionate (CAP), etc. The substrate 100 including the polymer resin may be flexible, rollable or bendable. The substrate 100 may have a multilayer structure including a layer including a polymer resin and an inorganic layer.

[0045] The display element layer 200 may include a circuit layer, organic light emitting diodes OLED and OLED′ as display elements, and an insulating layer IL therebetween, and the circuit layer includes thin film transistors TFT and TFT′.

[0046] The first pixel Pm may be arranged in the first display area DA, the first pixel Pm including a main thin film transistor TFT and an organic light emitting diode OLED connected thereto. The second pixel Pa may be arranged in the second display area SA, the second pixel Pa including a second thin film transistor TFT' and an organic light emitting diode OLED' connected thereto.

[0047] In addition, the transmission area TA may be arranged in the second display area SA, and the second thin film transistor TFT' and the display element are not arranged in the transmission area TA. It can be understood that the transmission area TA is an area that transmits light / signals emitted from the component 20 or light / signals incident to the component 20.

[0048] The component 20 may be located in the second display area SA. The component 20 may include an electronic component that uses light or sound. For example, the component 20 may be a sensor such as an infrared sensor that emits and / or receives light, a sensor that outputs and senses light or sound to measure distance or identify fingerprints, a small lamp that outputs light, or a speaker that outputs sound. The electronic component using light may use light in various suitable wavelength bands, such as visible light, infrared light, and ultraviolet light. The component 20 arranged in the second display area SA may be set as a plurality of components. For example, as the component 20, the light emitting element and the light receiving element may be set together in the second display area SA. In some examples, the light emitter and the light receiver may be set together (e.g., simultaneously) as one component 20.

[0049] The bottom electrode layer BSM may be arranged in the second display area SA. The bottom electrode layer BSM may be arranged below the second thin film transistor TFT'. The bottom electrode layer BSM may prevent or substantially prevent external light from reaching the second pixel Pa including the second thin film transistor TFT'. For example, the bottom electrode layer BSM may prevent or substantially prevent light emitted from the component 20 from reaching the second pixel Pa.

[0050] In an embodiment, a constant voltage or signal may be applied to the bottom electrode layer BSM to prevent or substantially prevent the pixel circuit from being damaged by electrostatic discharge.

[0051] The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 2 A first inorganic encapsulating layer 310 , a second inorganic encapsulating layer 330 , and an organic encapsulating layer 320 are shown.

[0052] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each include at least one of inorganic insulating materials, including aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymer material. The polymer material may include acrylic resin, epoxy resin, polyimide, and / or polyethylene, etc.

[0053] The lower protective film 175 may be attached to the back side of the substrate 100 to support and protect the substrate 100. The lower protective film 175 may include an opening 175OP corresponding to the second display area SA. Since the lower protective film 175 includes the opening 175OP, the light transmittance of the second display area SA may be improved. The lower protective film 175 may include PET or PI.

[0054] The area of ​​the second display area SA may be larger than the area of ​​the area where the assembly 20 is disposed. Therefore, the area of ​​the opening 175OP of the lower protective film 175 may not coincide with the area of ​​the second display area SA. For example, the area of ​​the opening 175OP may be smaller than the area of ​​the second display area SA.

[0055] In addition, a plurality of components 20 may be arranged in the second display area SA. The plurality of components 20 may have different functions.

[0056] An input sensing member that senses a touch input, an anti-reflection member including a polarizer and a retarder or a color filter and a black matrix, and a transparent window may be further disposed on the display panel 10 .

[0057] Although the illustrated embodiment shows that the thin film encapsulation layer 300 is used as an encapsulation member for sealing the display element layer 200, the embodiment is not limited thereto. For example, as a member for sealing the display element layer 200, a sealing substrate attached to the substrate 100 through a sealant or glass frit may be used.

[0058] Figure 3A is a plan view of a display panel 10 according to an embodiment.

[0059] Reference Figure 3A , the display panel 10 is arranged in the first display area DA and includes a plurality of first pixels Pm. The first pixels Pm may each include a display element such as an organic light emitting diode. Each first pixel Pm may emit, for example, red light, green light, blue light, or white light through an organic light emitting diode. In this specification, it is understood that the first pixel Pm is a sub-pixel that emits light of one color of red, green, blue, and white as described above. The first display area DA may be referred to as Figure 2 The described encapsulation member covers and thus can protect the first display area DA from external air or moisture.

[0060] The second display area SA may be arranged on one side of the first display area DA. A plurality of second pixels Pa are arranged in the second display area SA. The second pixels Pa may each include a display element such as an organic light emitting diode. Each second pixel Pa may emit, for example, red light, green light, blue light or white light through an organic light emitting diode. In this specification, it is understood that the second pixel Pa is a sub-pixel that emits light of one color of red, green, blue and white as described above. The transmission area TA may be arranged in the second display area SA, and the transmission area TA is arranged between the second pixels Pa. At least one component 20 may be arranged below the second display area SA of the display panel 10.

[0061] In an embodiment, the pixel circuit of the first pixel Pm may be the same as the pixel circuit of the second pixel Pa. However, the embodiment is not limited thereto. For example, the pixel circuit included in the first pixel Pm may be different from the pixel circuit included in the second pixel Pa.

[0062] Since the second display area SA includes the transmissive area TA, the resolution of the second display area SA may be smaller than that of the first display area DA. For example, the resolution of the second display area SA may be about 1 / 2 of the resolution of the first display area DA. In an embodiment, the resolution of the first display area DA may be 400 ppi or higher, and the resolution of the second display area SA may be 200 ppi or higher.

[0063] Each of the first pixel Pm and the second pixel Pa may be electrically connected to a peripheral circuit disposed in the first non-display area NDA. The first scan driving circuit 110, the second scan driving circuit 120, the terminal 140, the data driving circuit 150, the first power line 160 and the second power line 170 may be disposed in the first non-display area NDA.

[0064] The first scan driving circuit 110 may provide a scan signal to each of the first pixel Pm and the second pixel Pa through a scan line SL. The first scan driving circuit 110 may provide an emission control signal to each of the first pixel Pm and the second pixel Pa through an emission control line EL. The second scan driving circuit 120 may be arranged in parallel with the first scan driving circuit 110, with the first display area DA located therebetween. Some of the first pixels Pm arranged in the first display area DA may be electrically connected to the first scan driving circuit 110, and the remaining first pixels Pm may be connected to the second scan driving circuit 120. In another embodiment, the second scan driving circuit 120 may be omitted.

[0065] The terminal 140 may be arranged on one side of the substrate 100. The terminal 140 may be exposed by not being covered by the insulating layer and thus electrically connected to the printed circuit board PCB. The terminal PCB-P of the printed circuit board PCB may be electrically connected to the terminal 140 of the display panel 10. The printed circuit board PCB transmits a signal or power of the controller to the display panel 10. The control signal generated by the controller may be transmitted to each of the first scan driving circuit 110 and the second scan driving circuit 120 through the printed circuit board PCB. The controller may provide the first power voltage ELVDD and the second power voltage ELVSS to the first power line 160 and the second power line 170 through the first connection line 161 and the second connection line 171, respectively (see the description to be made below). Figure 4A and Figure 4B ). The first power voltage ELVDD may be supplied to each of the first pixel Pm and the second pixel Pa through the driving voltage line PL connected to the first power line 160, and the second power voltage ELVSS (also referred to as a common voltage) may be supplied to the counter electrode of each of the first pixel Pm and the second pixel Pa connected to the second power line 170.

[0066] The data driving circuit 150 is electrically connected to the data line DL. The data signal of the data driving circuit 150 may be provided to each of the first pixel Pm and the second pixel Pa through the connection line 151 connected to the terminal 140 and the data line DL connected to the connection line 151. Figure 3A , the data driving circuit 150 is shown to be arranged on the printed circuit board PCB, but the data driving circuit 150 may be arranged on the substrate 100 instead. For example, the data driving circuit 150 may be arranged between the terminal 140 and the first power line 160.

[0067] The first power line 160 may include a first sub-line 162 and a second sub-line 163 extending parallel to each other in the x direction with the first display area DA located therebetween. The second power line 170 has a ring shape including one open side and may partially surround the first display area DA.

[0068] Despite Figure 3A , the second display area SA is shown to be arranged on one side of the first display area DA, but the embodiment is not limited thereto. Figure 3B As shown in , the second display area SA may be set to an area corresponding to the sensor arranged thereunder. In this case, the second display area SA may be arranged inside the first display area DA and thus be surrounded by the first display area DA.

[0069] Figure 4A and Figure 4Bis an equivalent circuit diagram of a first pixel Pm and / or a second pixel Pa that may be included in the display panel 10 according to an embodiment.

[0070] Reference Figure 4A Each of the first pixel Pm and the second pixel Pa includes a pixel circuit PC and an organic light emitting diode OLED, the pixel circuit PC is connected to the scan line SL and the data line DL, and the organic light emitting diode OLED is connected to the pixel circuit PC.

[0071] The pixel circuit PC includes a driving thin film transistor T1, a switching thin film transistor T2 and a storage capacitor Cst. The switching thin film transistor T2 is connected to the scan line SL and the data line DL, and transmits a data signal Dm to the driving thin film transistor T1 in response to a scan signal Sn input through the scan line SL, and the data signal Dm is input through the data line DL.

[0072] The storage capacitor Cst is connected to the switching thin film transistor T2 and the driving voltage line PL, and stores a voltage corresponding to a difference between a voltage transmitted from the switching thin film transistor T2 and a first power voltage ELVDD (or driving voltage) supplied through the driving voltage line PL.

[0073] The driving thin film transistor T1 may be connected to the driving voltage line PL and the storage capacitor Cst, and may control a driving current flowing from the driving voltage line PL through the organic light emitting diode OLED in response to a voltage stored in the storage capacitor Cst. The organic light emitting diode OLED may emit light with a set or predetermined brightness by using the driving current.

[0074] although Figure 4A The case where the pixel circuit PC includes two thin film transistors and one storage capacitor is described, but the embodiment is not limited thereto. Figure 4B As shown in , the pixel circuit PC may include seven thin film transistors and one storage capacitor.

[0075] Reference Figure 4B , each of the first pixel Pm and the second pixel Pa includes a pixel circuit PC and an organic light emitting diode OLED connected to the pixel circuit PC. The pixel circuit PC may include a plurality of thin film transistors and a plurality of storage capacitors. The thin film transistors and the storage capacitors may be connected to the signal lines SL, SL-1, EL and DL, the initialization voltage line VL and the driving voltage line PL.

[0076] Despite Figure 4B, each of the first pixel Pm and the second pixel Pa is shown to be connected to the signal lines SL, SL-1, EL and DL, the initialization voltage line VL and the driving voltage line PL, but the embodiment is not limited thereto. In another embodiment, at least one of the signal lines SL, SL-1, EL and DL, the initialization voltage line VL and the driving voltage line PL can be shared by adjacent pixels.

[0077] The plurality of thin film transistors may include a driving thin film transistor T1 , a switching thin film transistor T2 , a compensation thin film transistor T3 , a first initialization thin film transistor T4 , an operation control thin film transistor T5 , an emission control thin film transistor T6 , and a second initialization thin film transistor T7 .

[0078] The signal lines include a scan line SL, a previous scan line SL-1, an emission control line EL, and a data line DL. The scan line SL transmits a scan signal Sn, the previous scan line SL-1 transmits the previous scan signal Sn-1 to the first initialization thin film transistor T4 and the second initialization thin film transistor T7, the emission control line EL transmits the emission control signal En to the operation control thin film transistor T5 and the emission control thin film transistor T6, the data line DL crosses the scan line SL and transmits the data signal Dm. The driving voltage line PL transmits the driving voltage ELVDD to the driving thin film transistor T1, and the initialization voltage line VL transmits the initialization voltage Vint that initializes the driving thin film transistor T1 and the pixel electrode.

[0079] The driving gate electrode G1 of the driving thin film transistor T1 is connected to the first electrode Cst1 of the storage capacitor Cst, the driving source electrode S1 of the driving thin film transistor T1 is connected to the driving voltage line PL through the operation control thin film transistor T5, and the driving drain electrode D1 of the driving thin film transistor T1 is electrically connected to the pixel electrode of the organic light emitting diode OLED through the emission control thin film transistor T6. The driving thin film transistor T1 receives the data signal Dm according to the switching operation of the switching thin film transistor T2, and drives the driving current I OLED Supply to the organic light emitting diode OLED.

[0080] The switching gate electrode G2 of the switching thin film transistor T2 is connected to the scanning line SL, the switching source electrode S2 of the switching thin film transistor T2 is connected to the data line DL, the switching drain electrode D2 of the switching thin film transistor T2 is connected to the driving source electrode S1 of the driving thin film transistor T1, and the thin film transistor T5 is simultaneously connected to the driving voltage line PL by operating. The switching thin film transistor T2 is turned on in response to the scanning signal Sn transmitted through the scanning line SL, and performs a switching operation of transmitting the data signal Dm transmitted through the data line DL to the driving source electrode S1 of the driving thin film transistor T1.

[0081] The compensation gate electrode G3 of the compensation thin film transistor T3 is connected to the scan line SL, the compensation source electrode S3 of the compensation thin film transistor T3 is connected to the driving drain electrode D1 of the driving thin film transistor T1, and is simultaneously connected to the pixel electrode of the organic light emitting diode OLED through the emission control thin film transistor T6, and the compensation drain electrode D3 of the compensation thin film transistor T3 is connected to the first electrode Cst1 of the storage capacitor Cst, the first initialization drain electrode D4 of the first initialization thin film transistor T4, and the driving gate electrode G1 of the driving thin film transistor T1. The compensation thin film transistor T3 is turned on in response to the scan signal Sn transmitted through the scan line SL, and the driving thin film transistor T1 is diode-connected by electrically connecting the driving gate electrode G1 of the driving thin film transistor T1 to the driving drain electrode D1.

[0082] The first initialization gate electrode G4 of the first initialization thin film transistor T4 is connected to the previous scan line SL-1, the first initialization source electrode S4 of the first initialization thin film transistor T4 is connected to the second initialization drain electrode D7 of the second initialization thin film transistor T7 and the initialization voltage line VL, and the first initialization drain electrode D4 of the first initialization thin film transistor T4 is connected to the first electrode Cst1 of the storage capacitor Cst, the compensation drain electrode D3 of the compensation thin film transistor T3, and the driving gate electrode G1 of the driving thin film transistor T1. The first initialization thin film transistor T4 is turned on in response to the previous scan signal Sn-1 transmitted through the previous scan line SL-1, and performs an initialization operation of transmitting the initialization voltage Vint to the driving gate electrode G1 of the driving thin film transistor T1, thereby initializing the voltage of the driving gate electrode G1 of the driving thin film transistor T1.

[0083] The operation control gate electrode G5 of the operation control thin film transistor T5 is connected to the emission control line EL, the operation control source electrode S5 of the operation control thin film transistor T5 is connected to the driving voltage line PL, and the operation control drain electrode D5 of the operation control thin film transistor T5 is connected to the driving source electrode S1 of the driving thin film transistor T1 and the switching drain electrode D2 of the switching thin film transistor T2.

[0084] The emission control gate electrode G6 of the emission control thin film transistor T6 is connected to the emission control line EL, the emission control source electrode S6 of the emission control thin film transistor T6 is connected to the driving drain electrode D1 of the driving thin film transistor T1 and the compensation source electrode S3 of the compensation thin film transistor T3, and the emission control drain electrode D6 of the emission control thin film transistor T6 is connected to the second initialization source electrode S7 of the second initialization thin film transistor T7 and the pixel electrode of the organic light emitting diode OLED.

[0085] The operation control thin film transistor T5 and the emission control thin film transistor T6 are simultaneously (or concurrently) turned on in response to the emission control signal En transmitted through the emission control line EL, so that the driving voltage ELVDD is transmitted to the organic light emitting diode OLED, thereby making the driving current I OLED Flow through the organic light emitting diode OLED.

[0086] The second initialization gate electrode G7 of the second initialization thin film transistor T7 is connected to the previous scan line SL-1, the second initialization source electrode S7 of the second initialization thin film transistor T7 is connected to the emission control drain electrode D6 of the emission control thin film transistor T6 and the pixel electrode of the organic light emitting diode OLED, and the second initialization drain electrode D7 of the second initialization thin film transistor T7 is connected to the first initialization source electrode S4 of the first initialization thin film transistor T4 and the initialization voltage line VL. The second initialization thin film transistor T7 is turned on in response to the previous scan signal Sn-1 transmitted through the previous scan line SL-1, and initializes the pixel electrode of the organic light emitting diode OLED.

[0087] although Figure 4B The case where the first initialization thin film transistor T4 and the second initialization thin film transistor T7 are connected to the previous scan line SL-1 is shown, but the embodiment is not limited thereto. In another embodiment, the first initialization thin film transistor T4 may be connected to the previous scan line SL-1 and driven in response to the previous scan signal Sn-1, and the second initialization thin film transistor T7 may be connected to a separate signal line (e.g., the next scan line) and driven in response to a signal transmitted through the separate signal line.

[0088] The second electrode Cst2 of the storage capacitor Cst is connected to the driving voltage line PL, and the counter electrode of the organic light emitting diode OLED is connected to the signal line transmitting the common voltage ELVSS. Therefore, the organic light emitting diode OLED can receive the driving current I from the driving thin film transistor T1. OLED and emit light, thereby displaying an image.

[0089] Despite Figure 4B 2 shows that the compensation thin film transistor T3 and the first initialization thin film transistor T4 both have double gate electrodes, but the compensation thin film transistor T3 and the first initialization thin film transistor T4 may each have one gate electrode.

[0090] In the present embodiment, the first pixel Pm and the second pixel Pa may include the same pixel circuit PC. However, the embodiment is not limited thereto. For example, the first pixel Pm and the second pixel Pa may include pixel circuits PC with different structures. For example, the first pixel Pm may adopt Figure 4B The pixel circuit of the second pixel Pa can be Figure 4AVarious suitable modifications may be made.

[0091] Figure 5 yes Figure 3A a plan view of a portion of the second display area SA, Fig. 6A It is along Figure 3A The line I-I' and Figure 5 A cross-sectional view of the display device 1 taken along line II-II', Figure 6B yes Fig. 6A Magnified view of region III.

[0092] Reference Figure 5 According to an embodiment, the second pixels Pa and the transmission area TA are arranged in the second display area SA of the display device 1. The second pixels Pa may be continuously arranged to constitute one pixel group Pg. The pixel group Pg may include at least one second pixel Pa. Figure 5 , it is shown that one pixel group Pg includes four second pixels Pa arranged in two columns. However, the embodiment is not limited thereto. Various modifications may be made to the number of second pixels Pa included in one pixel group Pg and the arrangement of the second pixels Pa in a suitable manner. For example, one pixel group Pg may include three second pixels Pa arranged side by side in one column. In some examples, one pixel group Pg may include eight second pixels Pa arranged in four columns. The second pixels Pa may be arranged in various suitable arrangements, such as a stripe arrangement, a mosaic arrangement, and a pentile arrangement.

[0093] The transmission area TA is an area that does not include a display element and therefore has a high light transmittance. The transmission area TA may be provided as a plurality of transmission areas TA in the second display area SA. The transmission areas TA and the pixel groups Pg may be alternately arranged in a first direction (e.g., an x ​​direction) and / or a second direction (e.g., a y direction). In some examples, the transmission area TA may surround the pixel group Pg. In some examples, the second pixel Pa may surround the transmission area TA.

[0094] Reference Fig. 6A The display device 1 according to the embodiment includes a first display area DA and a second display area SA. The first pixel Pm is arranged in the first display area DA, and the second pixel Pa and the transmission area TA are arranged in the second display area SA.

[0095] The first pixel Pm may include a main thin film transistor TFT, a main storage capacitor Cst, and a main organic light emitting diode OLED. The second pixel Pa may include a second thin film transistor TFT', an auxiliary storage capacitor Cst', and an auxiliary organic light emitting diode OLED'. The second display area SA may include an opening area TAH corresponding to the transmission area TA.

[0096] The component 20 may be arranged below the second display area SA. The component 20 may include an infrared (IR) sensor that transmits / receives infrared rays. Since the transmission area TA is arranged in the second display area SA, the infrared signal transmitted / received from / to the component 20 may pass through the second display area SA. For example, light emitted from the component 20 may travel in the z direction through the transmission area TA, and light generated from the outside of the display device 1 and incident on the component 20 may travel in the (-) z direction through the transmission area TA. In another embodiment, the component 20 may include an image sensor that captures an image. In an embodiment, the component 20 may include a plurality of image sensors, and one image sensor may correspond to the transmission area TA.

[0097] Hereinafter, a structure in which elements of the display device 1 according to the embodiment are stacked is described.

[0098] The substrate 100 may include glass or a polymer resin. The polymer resin may include polyethersulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyallylate, polyimide (PI), polycarbonate (PC) and / or cellulose acetate propionate (CAP), etc. The substrate 100 including the polymer resin may be flexible, rollable or bendable. The substrate 100 may include a multilayer structure including a layer including a polymer resin and an inorganic layer.

[0099] The buffer layer 111 may be located on the substrate 100, may reduce or block the penetration of foreign matter, moisture or external air from below the substrate 100, and provide a flat surface on the substrate 100. The buffer layer 111 may include an inorganic material, an organic material, or an organic / inorganic composite material, and the inorganic material includes oxides and nitrides. The buffer layer 111 may have a single structure or a multilayer structure of an inorganic material and an organic material. A barrier layer may be further arranged between the substrate 100 and the buffer layer 111, and the barrier layer blocks the penetration of external air. In an embodiment, the buffer layer 111 may include silicon oxide (SiO 2 ) or silicon nitride (SiN x ). The buffer layer 111 may include a first buffer layer 111 a and a second buffer layer 111 b that are stacked.

[0100] In the second display area SA, the bottom electrode layer BSM may be disposed between the first buffer layer 111a and the second buffer layer 111b. In another embodiment, the bottom electrode layer BSM may be disposed between the substrate 100 and the first buffer layer 111a. The bottom electrode layer BSM may be disposed under the second thin film transistor TFT' and may prevent or substantially prevent the characteristics of the second thin film transistor TFT' from being degraded by light emitted from the component 20, etc.

[0101] In addition, the bottom electrode layer BSM can be connected to the wiring GCL arranged on different layers through a contact hole. The bottom electrode layer BSM receives a constant voltage or signal from the wiring GCL. For example, the bottom electrode layer BSM can receive a driving voltage ELVDD or a scan signal. Since the bottom electrode layer BSM receives a constant voltage or signal, the possibility of electrostatic discharge can be significantly reduced. The bottom electrode layer BSM may include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W and / or Cu. The bottom electrode layer BSM may have a single-layer or multi-layer structure including the above-mentioned materials.

[0102] The main thin film transistor TFT and the second thin film transistor TFT' may be arranged on the buffer layer 111. The main thin film transistor TFT includes a first semiconductor layer A1, a first gate electrode G1, a first source electrode S1, and a first drain electrode D1. The second thin film transistor TFT' includes a second semiconductor layer A2, a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. The main thin film transistor TFT may be connected to the main organic light emitting diode OLED in the first display area DA to drive the main organic light emitting diode OLED. The second thin film transistor TFT' may be connected to the auxiliary organic light emitting diode OLED' in the second display area SA to drive the auxiliary organic light emitting diode OLED'.

[0103] The first semiconductor layer A1 and the second semiconductor layer A2 may be arranged on the buffer layer 111 and may include polycrystalline silicon. In another embodiment, the first semiconductor layer A1 and the second semiconductor layer A2 may both include amorphous silicon. In another embodiment, the first semiconductor layer A1 and the second semiconductor layer A2 may include an oxide of at least one of In, Ga, Sn, Zr, V, Hf, Cd, Ge, Cr, Ti, and Zn. The first semiconductor layer A1 and the second semiconductor layer A2 may both include a channel region, a source region, and a drain region. The source region and the drain region may be doped with impurities.

[0104] The second semiconductor layer A2 may overlap with the bottom electrode layer BSM, and the second buffer layer 111b may be located therebetween. In an embodiment, the width of the second semiconductor layer A2 may be less than the width of the bottom electrode layer BSM. Therefore, in a direction perpendicular to the substrate 100, the second semiconductor layer A2 may completely overlap with the bottom electrode layer BSM.

[0105] The first gate insulating layer 112 may cover the first semiconductor layer A1 and the second semiconductor layer A2. The first gate insulating layer 112 may include an inorganic insulating material such as silicon oxide (SiO 2 )、Silicon Nitride(SiN x )、Silicon Oxynitride (SiON), Aluminum Oxide (Al 2 O 3 ), titanium oxide (TiO 2 )、Tantalum oxide(Ta 2 O 5 )、HfO 2 ) and / or zinc peroxide (ZnO 2 ). The first gate insulating layer 112 may include a single layer or multiple layers including the above-mentioned inorganic insulating material.

[0106] The first gate electrode G1 and the second gate electrode G2 are arranged on the first gate insulating layer 112 to overlap the first semiconductor layer A1 and the second semiconductor layer A2, respectively. The first gate electrode G1 and the second gate electrode G2 may each include at least one of Mo, Al, Cu, and Ti, and have a single-layer or multi-layer structure. For example, the first gate electrode G1 and the second gate electrode G2 may each include a single Mo layer.

[0107] The second gate insulating layer 113 may cover the first gate electrode G1 and the second gate electrode G2. The second gate insulating layer 113 may include an inorganic insulating material such as silicon oxide (SiO 2 )、Silicon Nitride(SiN x )、Silicon Oxynitride (SiON), Aluminum Oxide (Al 2 O 3 ), titanium oxide (TiO 2 )、Tantalum oxide(Ta 2 O 5 )、HfO 2 ) and / or zinc peroxide (ZnO 2 ). The second gate insulating layer 113 may have a single-layer or multi-layer structure including the above-mentioned inorganic insulating material.

[0108] A first top electrode CE2 of the main storage capacitor Cst and a second top electrode CE2 ′ of the auxiliary storage capacitor Cst′ may be disposed on the second gate insulating layer 113 .

[0109] In the first display area DA, the first top electrode CE2 may overlap the first gate electrode G1 thereunder. The first gate electrode G1 and the first top electrode CE2 may constitute a main storage capacitor Cst, the first gate electrode G1 and the first top electrode CE2 overlapping each other with the second gate insulating layer 113 therebetween. The first gate electrode G1 may serve as a first bottom electrode CE1 of the main storage capacitor Cst.

[0110] In the second display area SA, the second top electrode CE2' may overlap the second gate electrode G2 thereunder. The second gate electrode G2 and the second top electrode CE2' may constitute an auxiliary storage capacitor Cst', the second gate electrode G2 and the second top electrode CE2' overlapping each other with the second gate insulating layer 113 therebetween. The second gate electrode G2 may serve as a second bottom electrode CE1' of the auxiliary storage capacitor Cst'.

[0111] The first top electrode CE2 and the second top electrode CE2' may each include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W and / or Cu, and may have a single-layer or multi-layer structure including the above materials.

[0112] The interlayer insulating layer 115 may cover the first top electrode CE2 and the second top electrode CE2′. The interlayer insulating layer 115 may include silicon oxide (SiO 2 )、Silicon Nitride(SiN x )、Silicon Oxynitride (SiON), Aluminum Oxide (Al 2 O 3 ), titanium oxide (TiO 2 )、Tantalum oxide(Ta 2 O 5 )、HfO 2 ) and / or zinc peroxide (ZnO 2 )wait.

[0113] When the first gate insulating layer 112, the second gate insulating layer 113, and the interlayer insulating layer 115 are collectively referred to as an inorganic insulating layer IL, a structure in which the inorganic insulating layer IL is stacked on the substrate 100 may have a transmittance of 90% or more. For example, light having a wavelength ranging from about 900 nm to about 1100 nm and passing through the substrate 100 and the inorganic insulating layer IL may have a transmittance of about 90%.

[0114] The source electrodes S1 and S2 and the drain electrodes D1 and D2 are arranged on the interlayer insulating layer 115. The source electrodes S1 and S2 and the drain electrodes D1 and D2 may include a conductive material including Mo, Al, Cu, and Ti, and may have a single layer or multilayer structure including the above materials. For example, the source electrodes S1 and S2 and the drain electrodes D1 and D2 may have a multilayer structure of Ti / Al / Ti.

[0115] The planarization layer 117 may cover the source electrodes S1 and S2 and the drain electrodes D1 and D2. The planarization layer 117 may have a flat top surface so that the first and second pixel electrodes 221 and 221' disposed thereon are flat.

[0116] The planarization layer 117 may have a single-layer or multi-layer structure including an organic material. The planarization layer 117 may include a general polymer such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA), or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, or a blend thereof.

[0117] An opening exposing one of the first source electrode S1 and the first drain electrode D1 of the main thin film transistor TFT is provided in the planarization layer 117. The first pixel electrode 221 may be electrically connected to the main thin film transistor TFT by contacting the first source electrode S1 or the first drain electrode D1 through the opening.

[0118] In addition, an opening exposing one of the second source electrode S2 and the second drain electrode D2 of the second thin film transistor TFT' is provided in the planarization layer 117. The second pixel electrode 221' may be electrically connected to the second thin film transistor TFT' by contacting the second source electrode S2 or the second drain electrode D2 via the opening.

[0119] The first pixel electrode 221 and the second pixel electrode 221 ′ may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO). In another embodiment, the first pixel electrode 221 and the second pixel electrode 221' may both include a reflective layer, and the reflective layer includes Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a mixture thereof. In another embodiment, the first pixel electrode 221 and the second pixel electrode 221' may also include ITO, IZO, ZnO or In on / below the reflective layer. 2 O 3In another embodiment, the first pixel electrode 221 and the second pixel electrode 221' may have a stack structure of ITO / Ag / ITO.

[0120] The pixel defining layer 119 may cover the edge of each of the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 119 includes a first opening OP1 and a second opening OP2, which overlap the first pixel electrode 221 and the second pixel electrode 221', respectively, and define the emission area of ​​the pixel. The pixel defining layer 119 may prevent or substantially prevent the generation of an arc (e.g., an electric arc) or the like at the edge of the pixel electrode (i.e., at the edge of the first pixel electrode 221 and the second pixel electrode 221') by increasing the distance between the edge of the first pixel electrode 221 and the second pixel electrode 221' and the counter electrode 223 above the first pixel electrode 221 and the second pixel electrode 221'. The pixel defining layer 119 may include an organic insulating material such as polyimide, polyamide, acrylic resin, BCB, HMDSO, and phenolic resin. The pixel defining layer 119 may be formed by a method such as spin coating.

[0121] When the planarization layer 117 and the pixel defining layer 119 are referred to as an organic insulating layer OL, the organic insulating layer OL may have a transmittance of 90% or more with respect to light of an infrared wavelength. For example, light having a wavelength ranging from about 900 nm to about 1100 nm and passing through the organic insulating layer OL may have a transmittance of about 90%.

[0122] The first emission layer 222b and the second emission layer 222b' are respectively arranged in the first opening OP1 and the second opening OP2 of the pixel defining layer 119, and the first emission layer 222b and the second emission layer 222b' respectively correspond to the first pixel electrode 221 and the second pixel electrode 221'. The first emission layer 222b and the second emission layer 222b' may include a polymer material or a low molecular weight material, and emit red light, green light, blue light or white light.

[0123] The organic functional layer 222e may be disposed on and / or below the first emission layer 222b and the second emission layer 222b'. The organic functional layer 222e may include a first functional layer 222a and a second functional layer 222c. The first functional layer 222a or the second functional layer 222c may be omitted.

[0124] The first functional layer 222a may be arranged below the first emission layer 222b and the second emission layer 222b'. The first functional layer 222a may have a single-layer or multi-layer structure including an organic material. The first functional layer 222a may include a hole transport layer (HTL) having a single-layer structure. In some examples, the first functional layer 222a may include a hole injection layer (HIL) and the HTL. The first functional layer 222a may be provided as a whole (e.g., a continuum) to correspond to the first pixel Pm and the second pixel Pa included in the first display area DA and the second display area SA. Therefore, the first functional layer 222a may correspond to the transmission area TA.

[0125] The second functional layer 222c may be disposed on the first emission layer 222b and the second emission layer 222b'. The second functional layer 222c may have a single-layer or multi-layer structure including an organic material. The second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 222c may be provided as a whole (e.g., a continuous body) to correspond to the first pixel Pm and the second pixel Pa included in the first display area DA and the second display area SA. Therefore, the second functional layer 222c may correspond to the transmission area TA.

[0126] The counter electrode 223 is arranged on the second functional layer 222c. The counter electrode 223 may include a conductive material having a small work function. For example, the counter electrode 223 may include a (semi) transparent layer, and the (semi) transparent layer includes Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or an alloy thereof. In some examples, the counter electrode 223 may also include a conductive material including ITO, IZO, ZnO or In on the (semi) transparent layer including the above materials. 2 O 3 The counter electrode 223 may be provided as one body (eg, one continuous body) to correspond to the first pixel Pm and the second pixel Pa included in the first display area DA and the second display area SA.

[0127] Layers ranging from the first pixel electrode 221 to the opposing electrode 223 in the first display area DA may constitute a main organic light emitting diode OLED. Layers ranging from the second pixel electrode 221 ′ to the opposing electrode 223 in the second display area SA may constitute an auxiliary organic light emitting diode OLED′.

[0128] A top layer 250 may be formed on the counter electrode 223, the top layer 250 including an organic material. The top layer 250 may include a layer for protecting the counter electrode 223 and improving light extraction efficiency at the same time. The top layer 250 may include an organic material having a refractive index greater than that of the counter electrode 223. In some examples, the top layer 250 may include stacked layers having different refractive indices. For example, the top layer 250 may include stacked layers having a high refractive index, a layer having a low refractive index, and a layer having a high refractive index. In this case, the refractive index of the layer having a high refractive index may be 1.7 or greater, and the refractive index of the layer having a low refractive index may be 1.3 or less.

[0129] The top layer 250 may also include LiF. In some examples, the top layer 250 may also include an inorganic insulating material, such as silicon oxide (SiO 2 ) and silicon nitride (SiN x ).

[0130] In the present embodiment, the counter electrode 223 and the top layer 250 may each include an opening area TAH corresponding to the transmission area TA. That is, the counter electrode 223 and the top layer 250 may respectively have an opening 223H and an opening 250H, both corresponding to the transmission area TA. In an embodiment, the widths of the openings 223H and 250H constituting the opening area TAH may be substantially the same. For example, the width of the opening 223H of the counter electrode 223 may be substantially the same as the width of the opening area TAH. The opening area TAH corresponding to the transmission area TA may mean that the opening area TAH overlaps the transmission area TA.

[0131] Since forming the opening area TAH corresponding to the transmission area TA means removing a member such as the opposing electrode 223 , the light transmittance of the transmission area TA may be significantly increased.

[0132] The substrate 100, the inorganic insulating layer IL, the organic insulating layer OL, and the organic functional layer 222e may be arranged in the transmission area TA. In this case, the structure in which the substrate 100, the inorganic insulating layer IL, the organic insulating layer OL, and the organic functional layer 222e are stacked in the transmission area TA may have an absorptivity of 20% or less with respect to infrared light.

[0133] Reference Figure 6B , the opening area TAH may include an opening 223H of the counter electrode 223 and an opening 250H of the roof layer 250. The opening 223H of the counter electrode 223 may expose the top surface of the organic functional layer 222e. The opening 250H of the roof layer 250 may correspond to the opening 223H of the counter electrode 223 and expose the top surface of the organic functional layer 222e. The opening 223H of the counter electrode 223 may have an area substantially the same as that of the opening 250H of the roof layer 250.

[0134] In the present embodiment, the top layer 250 includes a convex portion 250c adjacent to the opening area TAH. The convex portion 250c may have a thickness t1 greater than the adjacent thickness t2. Although the thickness of the convex portion 250c is shown to gradually increase and then gradually decrease in the drawings, the embodiment is not limited thereto. For example, the convex portion 250c may include a flat top surface having a thickness t1 greater than the adjacent thickness t2. The convex portion 250c may be formed in the process of forming the opening area TAH. The process of forming the convex portion 250c is described below.

[0135] 7A to 7C is a cross-sectional view of a method of manufacturing the display device 1 according to the embodiment.

[0136] Reference Fig. 7A The opposing electrode 223 is formed as one body (eg, one continuous body) in the first display area DA and the second display area SA, and the roof layer 250 is formed thereon. That is, the opposing electrode 223 and the roof layer 250 are formed to cover the transmission area TA.

[0137] The counter electrode 223 may include a metal that absorbs light in an infrared band (eg, about 800 nm to about 3000 nm). The counter electrode 223 may include Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or an alloy thereof.

[0138] The thickness of the counter electrode 223 may be about 5Å to about 300Å.

[0139] The top layer 250 may include an organic material. In an embodiment, the top layer 250 may include an organic material having a refractive index greater than that of the counter electrode 223. In some examples, the top layer 250 may include stacked layers having different refractive indices. For example, the top layer 250 may include stacked layers having a high refractive index, layers having a low refractive index, and layers having a high refractive index. In this case, the refractive index of the layer having a high refractive index may be 1.7 or greater, and the refractive index of the layer having a low refractive index may be 1.3 or less.

[0140] The top layer 250 may also include LiF. In some examples, the top layer 250 may also include an inorganic insulating material, such as silicon oxide (SiO 2 ) and silicon nitride (SiN x ).

[0141] Next, refer to Figure 7B, the laser light LP is irradiated on the counter electrode 223 arranged in the transmission area TA from the back side of the substrate 100. That is, the laser light LP may travel in the z direction in the laser area LPA corresponding to the transmission area TA from the back side of the substrate 100, and may be irradiated on the back side of the counter electrode 223. The laser light LP may have an infrared wavelength. In the case where the laser light LP is infrared, since the transmittance of the substrate 100, the buffer layer 111, the inorganic insulating layer IL, the organic insulating layer OL, and the organic functional layer 222e is about 80% to about 90%, the laser light LP may effectively reach the counter electrode 223.

[0142] Since the opposite electrode 223 includes a metal that absorbs infrared light, the opposite electrode 223 may absorb the laser light LP. Therefore, thermal expansion of the opposite electrode 223 occurs, and the opposite electrode 223 on which the laser light LP is irradiated may be peeled off from the organic function layer 222e therebelow.

[0143] When the counter electrode 223 is peeled off, the top layer 250 disposed on the peeled counter electrode 223 may also be removed together with the counter electrode 223. Figure 7C As shown in , the opening 223H of the counter electrode 223 and the opening 250H of the roof layer 250 may be formed simultaneously (or concurrently). The opening 223H of the counter electrode 223 and the opening 250H of the roof layer 250 may form an opening area TAH.

[0144] In this case, the roof layer 250 includes the convex portion 250c around the opening area TAH. Since the heat corresponding to the absorption of the laser light LP can be transferred not only to the counter electrode 223 on which the laser light LP is irradiated but also to the surroundings of the counter electrode 223, the organic material included in the roof layer 250 is gathered due to the heat to form the convex portion 250c.

[0145] When the laser LP is irradiated not on the counter electrode 223 but on a sacrificial metal layer disposed on a layer different from the layer on which the counter electrode 223 is disposed, no convex portion is formed because the roof layer 250 is separated from the sacrificial metal layer.

[0146] In contrast, according to the present embodiment, since the laser light LP is irradiated on the counter electrode 223 directly contacting the roof layer 250 and the laser light LP is absorbed in the counter electrode 223 , the convex portion 250 c may be formed in a portion of the roof layer 250 .

[0147] For laser LP, light having a wavelength of 800 nm or more may be used. In an embodiment, for laser LP, light having a wavelength in a range from about 1000 nm to about 1100 nm may be used. In an embodiment, laser LP may be set to pulses having a nanosecond duration. The power of laser LP may be adjusted by parameters such as frequency, wavelength, and spot overlap.

[0148] The laser LP may be scanned a plurality of times on the transmission area TA in a scanning direction in one direction. Therefore, a pattern caused by the laser LP may be formed in the organic function layer 222 e and / or the pixel defining layer 119 under the opposing electrode 223 .

[0149] Since the component 20 (see FIG. 1 ) may be arranged in the second display area SA of the display device 1 according to the embodiment Fig. 6A ), so the substrate 100, the buffer layer 111, the inorganic insulating layer IL and the organic insulating layer OL, all of which have high transmittance with respect to infrared rays, may be disposed in the second display area SA.

[0150] Therefore, for the laser LP used to form the opening area TAH, a laser with an infrared band is used. Since the laser LP passes through the layer arranged below the counter electrode 223 and having a high transmittance, most of the laser LP is absorbed by the counter electrode 223, and the counter electrode 223 can be easily peeled off.

[0151] Fig. 8A and Figure 8B is a cross-sectional view of a portion of a display device according to another embodiment, and particularly illustrates the periphery of a transmission area TA. Figure 8C yes Fig. 8A or Figure 8B A plan view of an embodiment of the present invention. FIG. 8A to FIG. 8C In, due to Figure 6B The same reference numerals as those in the drawings denote the same elements, and thus repeated descriptions thereof are omitted.

[0152] Reference Fig. 8A and Figure 8B , each of the opposing electrode 223 and the roof layer 250 of the display device according to the embodiment includes an opening area TAH corresponding to the transmission area TA. The roof layer 250 includes a convex portion 250c adjacent to the opening area TAH.

[0153] In the present embodiment, a plurality of protrusion patterns 222S may be disposed on the top surface of the organic functional layer 222e corresponding to the opening area TAH. The protrusion pattern 222S may be formed in a process of peeling off the counter electrode 223 by using the laser LP. As described above, in the present embodiment, the laser LP is irradiated on the counter electrode 223 to form the opening area TAH. Therefore, the counter electrode 223 corresponding to the opening area TAH absorbs heat by the laser LP. Since such heat is transferred to the organic functional layer 222e disposed below the counter electrode 223, the protrusion pattern 222S caused by the heat of the laser LP may be formed on the top surface of the organic functional layer 222e.

[0154] The shape and size of the protrusion pattern 222S may vary according to the size of the spot of the laser LP and the degree of overlap when scanning the laser LP. In an embodiment, the protrusion degree of the protrusion pattern 222S may be about 10Å.

[0155] The organic functional layer 222e may include a first functional layer 222a and a second functional layer 222c that are stacked. In this case, the protrusion pattern 222S may be formed on the top surface of the second functional layer 222c. Fig. 8A As shown in FIG. 1 , the protrusion pattern 222S′ may be formed on the top surface of the first functional layer 222a. Figure 8B As shown in , a protrusion pattern 119S may be formed on a top surface of the pixel defining layer 119 .

[0156] Reference Figure 8C , the embossed portion of the protrusion pattern 222S may extend in one direction. This may mean that scanning of the laser LP has been performed in one direction. In addition, the protrusion pattern 222S may be set as a plurality of protrusion patterns. The plurality of protrusion patterns may be separated from each other at set or predetermined intervals. The intervals may correspond to the spot size of the laser LP.

[0157] The shape and spacing distance of the embossed portion of the protrusion pattern 222S can be set differently according to the scanning direction and spot size of the laser LP. For example, in the case where the laser LP is scanned in a zigzag or circular shape, the shape of the embossed portion of the protrusion pattern 222S can be set in a zigzag or circular shape.

[0158] Fig. 9 is a cross-sectional view of a display device according to another embodiment. Fig. 9 In, due to Figure 6B The same reference numerals as those in the drawings denote the same elements, and thus repeated descriptions thereof are omitted.

[0159] Reference Fig. 9The display device according to the present embodiment includes a first display area DA and a second display area SA, and the second display area SA includes a transmission area TA. Each of the counter electrode 223 and the roof layer 250 of the display device includes an opening area TAH corresponding to the transmission area TA. The roof layer 250 includes a convex portion 250c adjacent to the opening area TAH.

[0160] In the present embodiment, the pixel defining layer 119 may include a first opening H1 located in the transmission area TA. Since the first opening H1 is formed in the pixel defining layer 119, the transmittance of the transmission area TA may be improved. The opening area TAH may be formed inside the first opening H1. In an embodiment, the width of the opening area TAH may be smaller than the width of the first opening H1. Therefore, the organic functional layer 222e, the counter electrode 223, and the top layer 250 may be arranged on the inner wall of the first opening H1. However, the embodiment is not limited thereto.

[0161] For example, the width of the opening area TAH may be greater than the width of the first opening H1 , and the sidewall of the opening area TAH may be disposed on the top surface of the pixel defining layer 119 .

[0162] Fig.10 is a cross-sectional view of a display device according to another embodiment. Fig.10 In, due to Fig. 6A The same reference numerals as those in the drawings denote the same elements, and thus repeated descriptions thereof are omitted.

[0163] Reference Fig.10 The display device according to the present embodiment includes a first display area DA and a second display area SA, and the second display area SA includes a transmission area TA. Each of the counter electrode 223 and the roof layer 250 of the display device includes an opening area TAH corresponding to the transmission area TA. The roof layer 250 includes a convex portion 250c adjacent to the opening area TAH.

[0164] In the present embodiment, the pixel defining layer 119 may include a first opening H1 located in the transmission area TA, and the planarization layer 117 may include a second opening H2 located in the transmission area TA. The second opening H2 may overlap with the first opening H1. Although the lower width of the second opening H2 is shown to be greater than the lower width of the first opening H1 in the drawings, so that the pixel defining layer 119 covers the inner wall of the second opening H2, the embodiment is not limited thereto. For example, the width of the second opening H2 of the planarization layer 117 may be less than the width of the first opening H1 of the pixel defining layer 119. Since the first opening H1 and the second opening H2 are formed, the transmittance of the transmission area TA can be improved.

[0165] The opening area TAH may be formed inside the first opening H1 and the second opening H2. In an embodiment, the width of the opening area TAH may be smaller than the width of the first opening H1 and the second opening H2. Therefore, the organic functional layer 222e, the counter electrode 223, and the roof layer 250 may be arranged on the inner wall of the first opening H1. However, the embodiment is not limited thereto.

[0166] For example, the width of the opening area TAH may be greater than the width of the first opening H1 , and the sidewall of the opening area TAH may be disposed on the top surface of the pixel defining layer 119 .

[0167] Fig.11 is a cross-sectional view of a display device according to another embodiment. Fig.11 In, due to Fig. 6A The same reference numerals as those in the drawings denote the same elements, and thus repeated descriptions thereof are omitted.

[0168] Reference Fig.11 The display device according to the present embodiment includes a first display area DA and a second display area SA, and the second display area SA includes a transmission area TA. Each of the counter electrode 223 and the roof layer 250 of the display device includes an opening area TAH corresponding to the transmission area TA. The roof layer 250 includes a convex portion 250c adjacent to the opening area TAH.

[0169] In the present embodiment, the pixel defining layer 119 may include a first opening H1 in the transmission area TA, and the planarization layer 117 may include a second opening H2 in the transmission area TA. The second opening H2 may overlap the first opening H1. In addition, the third opening H3 may be disposed in the inorganic insulating layer IL.

[0170] The third opening H3 may expose the top surface of the buffer layer 111 or the substrate 100. The third opening H3 may include an opening of the first gate insulating layer 112, an opening of the second gate insulating layer 113, and an opening of the interlayer insulating layer 115 that overlap each other. The openings may be formed separately by separate processes, or may be formed simultaneously (or concurrently) by the same process. In some examples, the opening of the first gate insulating layer 112 and the opening of the second gate insulating layer 113 may be formed simultaneously (or concurrently), and the opening of the interlayer insulating layer 115 may be formed separately. Various suitable modifications may be made. In the case where the opening is formed by a separate process, a step difference may be formed on the side surface of the third opening H3.

[0171] In addition, the inorganic insulating layer IL may include a groove instead of the third opening H3 exposing the buffer layer 111. For example, the first gate insulating layer 112 of the inorganic insulating layer IL may be continuously arranged to correspond to the transmission area TA, and the second gate insulating layer 113 and the interlayer insulating layer 115 may include openings corresponding to the transmission area TA, respectively.

[0172] In some examples, the first gate insulating layer 112 and the second gate insulating layer 113 may be continuously arranged to correspond to the transmission area TA, and the interlayer insulating layer 115 may include an opening corresponding to the transmission area TA. Various suitable modifications may be made.

[0173] The third opening H3 may overlap the first opening H1 and the second opening H2. Since the first opening H1, the second opening H2, and the third opening H3 are formed, the transmittance of the transmission area TA may be increased. The organic functional layer 222e, the counter electrode 223, and the roof layer 250 may be arranged on the inner walls of the first opening H1, the second opening H2, and the third opening H3.

[0174] Fig.12 is a cross-sectional view of a display device according to another embodiment. Fig.12 In, due to Fig. 6A The same reference numerals as those in the drawings denote the same elements, and thus repeated descriptions thereof are omitted.

[0175] Reference Fig.12 The display device according to the present embodiment includes a first display area DA and a second display area SA, and the second display area SA includes a transmission area TA. Each of the counter electrode 223 and the roof layer 250 of the display device includes an opening area TAH corresponding to the transmission area TA. The roof layer 250 includes a convex portion 250c adjacent to the opening area TAH.

[0176] In the present embodiment, the main organic light emitting diode OLED and the auxiliary organic light emitting diode OLED' may be covered by an encapsulation substrate 300A. The encapsulation substrate 300A includes a transparent material. For example, the encapsulation substrate 300A may include a glass material. In some examples, the encapsulation substrate 300A may include a polymer resin. The encapsulation substrate 300A may prevent or substantially prevent external moisture or foreign matter from penetrating into the main organic light emitting diode OLED and the auxiliary organic light emitting diode OLED'.

[0177] A sealing material such as a sealant may be disposed between the substrate 100 and the encapsulation substrate 300A on which the main organic light emitting diode OLED and the auxiliary organic light emitting diode OLED′ are disposed. The sealing material may block external moisture or foreign matter that may penetrate through a space between the substrate 100 and the encapsulation substrate 300A.

[0178] Fig.13 is a cross-sectional view of a display device according to another embodiment. Fig.13 In, due to Fig. 6A The same reference numerals as those in the drawings denote the same elements, and thus repeated descriptions thereof are omitted.

[0179] Reference Fig.13 The display device according to the present embodiment includes a first display area DA and a second display area SA, and the second display area SA includes a transmission area TA. Each of the counter electrode 223 and the roof layer 250 of the display device includes an opening area TAH corresponding to the transmission area TA. The roof layer 250 includes a convex portion 250c adjacent to the opening area TAH.

[0180] In the display device according to the present embodiment, the thin film encapsulation layer 300 is arranged on the roof layer 250. The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Fig.13 3 shows that the thin film encapsulation layer 300 has a structure in which a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 are stacked. In another embodiment, the number of organic encapsulation layers, the number of inorganic encapsulation layers, and a stacking order may be modified.

[0181] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each include at least one inorganic insulating material and may be formed by chemical vapor deposition (CVD), wherein the at least one inorganic insulating material includes aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and / or silicon oxynitride, etc. The organic encapsulation layer 320 may include a polymer material. The polymer material may include silicon resin, acrylic resin, epoxy resin, polyimide and / or polyethylene, etc.

[0182] The first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 may all be formed as one body (eg, one continuous body) to cover the first display area DA and the second display area SA. Therefore, the first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 may be disposed inside the opening area TAH.

[0183] In another embodiment, the organic encapsulation layer 320 may be formed as one body (e.g., one continuous body) to cover the first display area DA and the second display area SA, and may not exist in the transmission area TA. In other words, the organic encapsulation layer 320 may include an opening corresponding to the transmission area TA. In this case, the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may contact each other inside the opening area TAH.

[0184] Fig.14A and Fig. 14Bis an image around the transmission area TA captured after the opposing electrode 223 is peeled off according to the present embodiment.

[0185] Reference Fig.14A and Fig. 14B The top layer 250 around the transmission area TA includes a convex portion 250c having a thickness t1 greater than its surrounding adjacent thickness t2. The organic function layer 222e and the pixel defining layer 119 may be arranged in the transmission area TA, and a protrusion pattern 222S may be formed on the top surface of the organic function layer 222e.

[0186] Reference Fig. 14B It is known that the protrusion pattern 222S on the top surface of the organic function layer 222e is formed in the scanning direction of the laser LP.

[0187] In the display device according to the embodiment, since the pixel area and the transmission area with improved transmittance are arranged in the second display area corresponding to the component (such as a sensor), an environment in which the component can operate can be ensured, and simultaneously (or concurrently), an image can be displayed in the area overlapping the component.

[0188] Therefore, a display device having various functions and improving quality at the same time can be provided.However, these effects are provided as examples, and the effects according to the embodiment are described in detail through the above description.

[0189] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the spirit and scope of the inventive concept, the first element, first component, first region, first layer or first part discussed below may be named as the second element, second component, second region, second layer or second part.

[0190] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature to another (other) element or feature as shown in the accompanying drawings. It will be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, the element described as "below" or "below" or "below" other elements or features will then be positioned as "above" the other elements or features. Therefore, the example terms "below" and "below" can include both above and below orientations. The device can be positioned otherwise (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used here should be interpreted accordingly. In addition, it will also be understood that when a layer is referred to as "between" two layers, the layer can be the only layer between the two layers, or one or more intermediate layers can also be present.

[0191] The terms used here are for the purpose of describing specific embodiments and are not intended to limit the inventive concept. As used herein, unless the context clearly indicates otherwise, the singular forms "one" and "one (kind / person)" are also intended to include plural forms. It will also be understood that when the terms "include", "comprise" and / or their variations are used in this specification, the stated features, wholes, steps, operations, elements and / or components are described, but the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their groups are not excluded. As used herein, the term "and / or" includes any combination and all combinations of one or more of the relevant listed items.

[0192] For the purpose of the present disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ for example.

[0193] Furthermore, when describing embodiments of the inventive concept, the use of “may” refers to “one or more embodiments of the inventive concept.” Furthermore, the term “exemplary” is intended to indicate an example or illustration.

[0194] It will be understood that when an element or layer is referred to as being “on,” “connected to,” “bound to,” or “adjacent to” another element or layer, the element or layer may be directly on, directly connected to, directly bound to, or directly adjacent to the other element or layer, or one or more intervening elements or layers may be present. When an element or layer is referred to as being “directly on,” “directly connected to,” “directly bound to,” or “immediately adjacent to” another element or layer, there are no intervening elements or layers.

[0195] As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation rather than terms of degree, and are intended to account for the inherent variations in measurements or calculations that those skilled in the art would recognize.

[0196] As used herein, the term "use" and variations thereof may be considered synonymous with the term "utilize" and variations thereof, respectively.

[0197] In addition, any numerical range stated herein is intended to include all sub-ranges of the same numerical precision contained in the stated range. For example, the range of "1.0 to 10.0" is intended to include all sub-ranges between the stated minimum value 1.0 and the stated maximum value 10.0 (including the stated minimum value 1.0 and the stated maximum value 10.0), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit stated here is intended to include all smaller numerical limits contained therein, and any minimum numerical limit stated in this specification is intended to include all larger numerical limits contained therein. Therefore, the applicant reserves the right to modify this specification (including claims) to explicitly state any sub-range contained in the range explicitly stated here. All these ranges are intended to be inherently described in this specification.

[0198] Any suitable hardware, firmware (e.g., a dedicated integrated circuit), software, or a suitable combination of software, firmware, and hardware may be used to implement the display device and / or any other related device or component according to the embodiments of the present invention described herein. For example, the various components of the display device may be formed on an integrated circuit (IC) chip or on separate IC chips. In addition, the various components of the display device may be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on the same substrate. In addition, the various components of the display device may be processes or threads running on one or more processors in one or more computing devices that execute computer program instructions and interact with other system components to perform the various functions described herein. The computer program instructions are stored in a memory, which may be implemented in a computing device using a standard memory device such as a random access memory (RAM) as an example. The computer program instructions may also be stored in other non-temporary computer-readable media (such as CD-ROMs, flash drives, etc. as examples). In addition, those skilled in the art should recognize that, without departing from the scope of the exemplary embodiments of the present invention, the functions of various computing devices may be combined or integrated into a single computing device, or the functions of a particular computing device may be distributed on one or more other computing devices.

[0199] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various suitable changes in form and detail may be made therein without departing from the spirit and scope of the present disclosure as defined by the claims and their equivalents.

Claims

1. A display panel, comprising: A substrate including a first display area and a second display area, the first display area including a first pixel, and the second display area including a second pixel and a transmission area; a first pixel electrode and a first emission layer, in the first pixel; a second pixel electrode and a second emission layer, in the second pixel; a counter electrode, arranged as a whole in the first display area and the second display area; as well as an organic functional layer, between the first pixel electrode and the counter electrode, The counter electrode has an opening area corresponding to the transmission area. wherein the organic functional layer extends to the transmission region, and Wherein, a plurality of protrusion patterns are arranged on the top surface of the organic functional layer.

2. The display panel according to claim 1, wherein: The plurality of protrusion patterns are spaced apart from each other at set intervals, and each of the plurality of protrusion patterns extends in one direction.

3. The display panel according to claim 1, wherein: The organic functional layer includes a first functional layer and a second functional layer disposed on the first functional layer.

4. The display panel according to claim 3, wherein: The plurality of protrusion patterns are disposed on the second functional layer.

5. The display panel according to claim 3, wherein: The plurality of protrusion patterns are disposed on the first functional layer and the second functional layer.

6. The display panel according to claim 1, wherein: Each of the plurality of protrusion patterns is disposed in a line shape in a plan view.

7. The display panel according to claim 1, further comprising: a second thin film transistor, in the second display area; as well as A bottom electrode layer is between the substrate and the second thin film transistor.

8. The display panel according to claim 1, further comprising: a pixel defining layer exposing a central portion of each of the first pixel electrode and the second pixel electrode and covering an edge of each of the first pixel electrode and the second pixel electrode, Wherein, the pixel defining layer includes a first opening corresponding to the transmission area.

9. The display panel according to claim 8, further comprising: a planarization layer, between the substrate and the pixel defining layer, Wherein, the planarization layer includes a second opening corresponding to the transmission area.

10. The display panel according to claim 1, further comprising: an inorganic insulating layer disposed on the substrate, Wherein, the inorganic insulating layer includes a third opening corresponding to the transmission area.

11. The display panel according to claim 10, wherein: The width of the opening area is smaller than the width of the third opening.

12. The display panel according to claim 1, further comprising: The thin film encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on a top layer arranged on the counter electrode.

13. The display panel according to claim 12, wherein: The first inorganic encapsulation layer is in direct contact with the organic functional layer at the transmission region.

14. A display device, comprising: A display panel comprising a first display area and a second display area, the first display area comprising a first pixel, and the second display area comprising a second pixel and a transmission area; as well as A component is arranged below the second display area of ​​the display panel, The display panel further includes: a substrate; a first pixel electrode and a first emission layer in the first pixel; a second pixel electrode and a second emission layer in the second pixel; a counter electrode arranged as a whole in the first display area and the second display area; and an organic functional layer between the first pixel electrode and the counter electrode. The counter electrode has an opening area corresponding to the transmission area. wherein the organic functional layer extends to the transmission region, and Wherein, a plurality of protrusion patterns are arranged on the top surface of the organic functional layer.

15. The display device according to claim 14, wherein: The component is a sensor using light.

16. The display device according to claim 14, wherein: Each of the plurality of protrusion patterns is disposed in a line shape in a plan view.

17. The display device according to claim 14, further comprising: an inorganic insulating layer disposed on the substrate, Wherein, the inorganic insulating layer includes a third opening corresponding to the transmission area.

18. The display device according to claim 17, wherein: The width of the opening area is smaller than the width of the third opening.

19. The display device according to claim 14, further comprising: The thin film encapsulation layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on a top layer arranged on the counter electrode.

20. The display device according to claim 19, wherein: The first inorganic encapsulation layer is in direct contact with the organic functional layer at the transmission region.

21. A display device, comprising: A substrate including a first display area and a second display area, the first display area including a first pixel, and the second display area including a second pixel and a transmission area; a first pixel electrode and a first emission layer, in the first pixel; a second pixel electrode and a second emission layer, in the second pixel; a counter electrode, arranged as a whole in the first display area and the second display area; an organic functional layer, between the first pixel electrode and the counter electrode; as well as a top layer, arranged on the counter electrode, Wherein, the counter electrode and the top layer both have an opening area corresponding to the transmission area, The top layer further comprises a convex portion around the transmission area, the convex portion is configured to protrude from the top surface of the substrate, and Wherein, the organic functional layer corresponds to the opening area.

22. The display device according to claim 21, wherein: A plurality of protrusion patterns are located on a top surface of the organic functional layer.

23. The display device according to claim 22, wherein: The plurality of protrusion patterns are spaced apart from each other at set intervals, and each of the plurality of protrusion patterns extends in one direction.

24. The display device according to claim 21, further comprising: a second thin film transistor, in the second display area; as well as A bottom electrode layer is between the substrate and the second thin film transistor.

25. The display device according to claim 21, further comprising: a pixel defining layer exposing a central portion of each of the first pixel electrode and the second pixel electrode and covering an edge of each of the first pixel electrode and the second pixel electrode, Wherein, the pixel defining layer includes a first opening corresponding to the transmission area.

26. The display device according to claim 25, further comprising: a planarization layer, between the substrate and the pixel defining layer, Wherein, the planarization layer includes a second opening corresponding to the transmission area.

27. The display device according to claim 26, wherein: A width of the first opening is smaller than a width of the second opening.

28. The display device according to claim 21, further comprising: an inorganic insulating layer disposed on the substrate, Wherein, the inorganic insulating layer includes a third opening corresponding to the transmission area.

29. The display device according to claim 28, wherein: The width of the opening area is smaller than the width of the third opening.

30. The display device according to claim 21, wherein: The first display area and the second display area are sealed by a packaging substrate facing the substrate.

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