Organic light emitting diode display device

Abstract

An organic light emitting diode display device includes: a substrate having a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel; a first color filter layer, a second color filter layer, and a third color filter layer over the substrate and in the second sub-pixel, the third sub-pixel, and the fourth sub-pixel, respectively; a first wavelength conversion layer, a second wavelength conversion layer, and a third wavelength conversion layer, the first wavelength conversion layer over the substrate and in the first sub-pixel, the second wavelength conversion layer and the third wavelength conversion layer over the first color filter layer and the second color filter layer, respectively; and a light emitting diode over the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer and in each of the first sub-pixel, the second sub-pixel, the third sub-pixel, and the fourth sub-pixel.

Description

[0001] This case is a divisional application, and its parent case is an application with a filing date of November 20, 2020, application number 202011307963.8, and invention name “Organic light-emitting diode display device”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the benefit of priority to Korean Patent Application No. 10-2019-0160623, filed in Korea on December 5, 2019, the entire contents of which are hereby incorporated by reference for all purposes as if fully set forth herein. Technical Field

[0004] The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device including a wavelength conversion layer. Background Art

[0005] Recently, flat panel displays (FPDs) having a thin profile, light weight, and low power consumption have been developed and applied to various fields.

[0006] In an organic light emitting diode (OLED) display device among flat panel displays, charges are injected into a light emitting layer between a cathode electrode for injecting electrons and an anode electrode for injecting holes to form excitons, and the excitons are converted from an excited state to a ground state to emit light.

[0007] White OLED display devices for high-resolution small-sized display devices for virtual reality (VR) or augmented reality (AR) or for large-sized television display devices have been researched and developed.

[0008] A white OLED display device includes a light-emitting layer that emits white light and a color filter layer that transmits light of a specific color (specific wavelength). For example, a white OLED display device includes a white sub-pixel, a red sub-pixel, a green sub-pixel, and a blue sub-pixel that emit white light, red light, green light, and blue light, respectively.

[0009] In a white OLED display device, a light emitting layer has a tandem structure including a plurality of stacked layers to emit white light with relatively high color temperature and relatively high brightness, and one of the plurality of stacked layers includes two or more dopants to emit light of two or more colors.

[0010] However, due to the combination of two or more dopants in one of the plurality of stacks, a charge distribution difference according to current density and a white spectrum difference occur, and thus a difference in white light color temperature of gray scales is apparent in a white OLED display device.

[0011] In order to solve the above problems, the material of the light-emitting layer emitting white light can be changed, or the composition ratio of the material of the light-emitting layer emitting white light can be adjusted. However, the range of changing the material or adjusting the composition ratio is very limited and has high difficulty. Summary of the invention

[0012] Accordingly, the present invention is directed to an organic light emitting diode display device that substantially obviates one or more problems due to limitations and disadvantages of the related art.

[0013] An object of the present invention is to provide an organic light emitting diode display device in which a white spectrum with a relatively high color temperature and a relatively high brightness is stably obtained by converting white light of a light emitting layer into light of a different color using a wavelength conversion layer.

[0014] Another object of the present invention is to provide an organic light emitting diode display device, in which various white spectra are obtained and color reproducibility is improved by converting white light of a light emitting layer into light of different colors using a wavelength conversion layer and transmitting light of a predetermined color in the white light of the light emitting layer using a color filter layer.

[0015] Other advantages and features of the present invention will be explained in part in the following description, and in part will become apparent from the description, or can be learned from the practice of the present invention. These and other advantages of the present invention will be realized and obtained through the structures specifically pointed out in the written description and its claims and the accompanying drawings.

[0016] To achieve these and other advantages and in accordance with the purposes of the present invention, as embodied and broadly described herein, an organic light emitting diode display device includes: a substrate having a first subpixel, a second subpixel, a third subpixel, and a fourth subpixel; a first color filter layer, a second color filter layer, and a third color filter layer, over the substrate and in the second subpixel, respectively; a first wavelength conversion layer, a second wavelength conversion layer, and a third wavelength conversion layer, the first wavelength conversion layer being over the substrate and in the first subpixel, the second wavelength conversion layer and the third wavelength conversion layer being over the first color filter layer and the second color filter layer, respectively; and a light emitting diode, over the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer and in each of the first subpixel, the second subpixel, the third subpixel, and the fourth subpixel.

[0017] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are included to provide a further understanding of the present invention, and are incorporated in and constitute a part of this application, and illustrate embodiments of the present invention and together with the description serve to explain the principle of the present invention. In the drawings:

[0019] Figure 1 A diagram showing an organic light emitting diode display device according to a first embodiment of the present disclosure;

[0020] Figure 2 is a diagram showing a sub-pixel of an organic light emitting diode display device according to a first embodiment of the present disclosure;

[0021] Figure 3 is a cross-sectional view showing an organic light emitting diode display device according to a first embodiment of the present disclosure;

[0022] Figure 4 is a plan view showing a first wavelength conversion layer of an organic light emitting diode display device according to a first embodiment of the present disclosure;

[0023] Figure 5 is a plan view showing a first wavelength conversion layer of an organic light emitting diode display device according to a second embodiment of the present disclosure;

[0024] Figure 6 is a plan view showing a first wavelength conversion layer of an organic light emitting diode display device according to a third embodiment of the present disclosure;

[0025] Figure 7 is a cross-sectional view showing a light emitting diode of an organic light emitting diode display device according to a first embodiment of the present disclosure;

[0026] Figure 8 is a cross-sectional view showing a light emitting diode of an organic light emitting diode display device according to a fourth embodiment of the present disclosure;

[0027] Fig. 9 is a diagram showing a spectrum of fourth light of a first sub-pixel of an organic light emitting diode display device according to a first embodiment of the present disclosure;

[0028] Fig.10 is a diagram showing spectrums of fifth light, sixth light, and seventh light of the second sub-pixel, the third sub-pixel, and the fourth sub-pixel of the organic light emitting diode display device according to the first embodiment of the present disclosure;

[0029] Fig.11 is a cross-sectional view showing an organic light emitting diode display device according to a fifth embodiment of the present disclosure;

[0030] Fig.12 is a cross-sectional view showing an organic light emitting diode display device according to a sixth embodiment of the present disclosure;

[0031] Fig.13 is a cross-sectional view showing an organic light emitting diode display device according to a seventh embodiment of the present disclosure;

[0032] Fig.14 is a cross-sectional view showing an organic light emitting diode display device according to an eighth embodiment of the present disclosure; and

[0033] Fig.15 is a cross-sectional view showing an organic light emitting diode display device according to a ninth embodiment of the present disclosure. DETAILED DESCRIPTION

[0034] Reference will now be made in detail to embodiments of the present disclosure, examples of which may be shown in the accompanying drawings. In the following description, when it is determined that a detailed description of a known function or configuration related to this document unnecessarily obscures the subject matter of the inventive concept, its detailed description will be omitted. The described processing steps and / or the progression of operations are examples; however, the order of the steps and / or operations is not limited to the order set forth herein, and may be changed in a manner known in the art, except for steps and / or operations that must occur in a specific order. In this application, the same reference numerals represent the same elements. The names of the various elements used in the following description are selected only for the convenience of writing the specification, and therefore may be different from the names used in the actual product.

[0035] The advantages and features of the present disclosure and their implementation methods will be described by referring to the following example embodiments described in the accompanying drawings. However, the present disclosure can be implemented in different forms and should not be interpreted as being limited to the example embodiments described herein. On the contrary, these embodiments are provided to make the present disclosure sufficiently thorough and complete, thereby helping those skilled in the art to fully understand the scope of the present disclosure. In addition, the present disclosure is limited only by the scope of the claims.

[0036] The shapes, sizes, ratios, angles and quantities disclosed in the accompanying drawings to describe the embodiments of the present disclosure are examples only. Therefore, the present disclosure is not limited to the details shown. In the present application, the same reference numerals refer to the same elements. In the following description, when it is determined that the detailed description of the relevant known functions or configurations does not necessarily obscure the main points of the present disclosure, the detailed description of such known functions or configurations may be omitted. In the case of using the terms "including", "having" and "comprising" described in this specification, another component may be added unless a more restrictive term, such as "only", is used. Unless otherwise indicated, a term in the singular may include a plural form.

[0037] When constructing an element, even if the error or tolerance range is not explicitly described, the element is interpreted as including the error or tolerance range. When describing a positional relationship, for example, when the positional relationship between two components is described as "on...", "above...", "below...", "near...", one or more other components may be disposed between the two components unless more restrictive terms such as "just" or "directly" are used.

[0038] When describing a temporal relationship, for example, when a temporal order is described as "after," "subsequently," "next," and "before," discontinuities may be included unless more restrictive terms such as "just," "immediately," or "directly" are used.

[0039] It will be understood that although the terms "first", "second", etc. are used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the present disclosure.

[0040] When describing the elements of the present disclosure, terms such as "first", "second", "A", "B", "(a)", "(b)", etc. may be used. These terms are only used to distinguish one element from another, and the nature, order, sequence and quantity of the corresponding elements should not be limited by these terms. In addition, when an element or layer is described as being "connected", "coupled" or "adhered" to another element or layer, unless otherwise specified, the element or layer may not only be directly connected or adhered to the other element or layer, but also indirectly connected or adhered to the other element or layer through one or more intermediate elements or layers "disposed" between the elements or layers.

[0041] The term "at least one" should be understood to include any and all combinations of one or more of the related listed items. For example, the meaning of "at least one of the first item, the second item and the third item" means all items proposed from two or more of the first item, the second item and the third item and the combination of the first item, the second item and the third item.

[0042] In the description of the embodiments, when one structure is described as being arranged "on or above" or "below or below" another structure, the description should be interpreted as including a case where the structures are in contact with each other and a case where a third structure is provided between the structures. The size and thickness of each element shown in the drawings are given only for the convenience of description, and the embodiments of the present disclosure are not limited thereto.

[0043] As those skilled in the art can fully understand, the features of the various embodiments of the present disclosure can be partially or completely coupled or combined with each other, and can interoperate and technically drive each other in various ways. The embodiments of the present disclosure can be implemented independently of each other, or can be implemented together in a dependent relationship.

[0044] Reference will now be made in detail to the present disclosure, examples of which are illustrated in the accompanying drawings.

[0045] Figure 1 is a diagram showing an organic light emitting diode display device according to a first embodiment of the present disclosure, Figure 2 is a diagram illustrating sub-pixels of an organic light emitting diode display device according to a first embodiment of the present disclosure.

[0046] exist Figure 1 In the embodiment, the organic light emitting diode (OLED) display device 110 includes a timing control part 180 , a data driving part 182 , a gate driving part 184 and a display panel 186 .

[0047] The timing control section 180 generates a gate control signal, a data control signal, and image data using an image signal and a plurality of timing signals transmitted from an external system such as a graphic card or a television system. The timing control section 180 provides the data control signal and the image data to the data driving section 182, and provides the gate control signal to the gate driving section 184.

[0048] The data driving part 182 generates a data signal (data voltage) using the data control signal and the image data transmitted from the timing control part 180 , and supplies the data voltage to the data line DL of the display panel 186 .

[0049] The gate driving section 184 generates a gate signal (gate voltage) using the gate control signal sent from the timing control section 180 , and supplies the gate voltage to the gate line GL of the display panel 186 .

[0050] The display panel 186 displays an image using gate signals and data signals. The display panel 186 includes gate lines GL, data lines DL, and a plurality of sub-pixels SP ( Figure 2 ).

[0051] For example, each of the plurality of subpixels SP may be defined by the gate line GL and the data line DL crossing each other, and the plurality of subpixels SP may include first, second, third, and fourth subpixels SP1, SP2, SP3, and SP4 corresponding to white, red, green, and blue, respectively.

[0052] Each of the plurality of sub-pixels SP includes a plurality of thin film transistors (TFTs). For example, each of the plurality of sub-pixels SP may include a switching TFT, a driving TFT, a storage capacitor, and a light emitting diode.

[0053] exist Figure 2 In the embodiment, each of the plurality of sub-pixels SP of the OLED display device 110 according to the present disclosure includes a switching TFT Ts, a driving TFT Td, a storage capacitor Cs, and a light emitting diode De.

[0054] The switching TFT Ts supplies the data signal of the data line DL to the driving TFT Td according to the gate signal of the gate line GL, and the driving TFT Td supplies the high level voltage ELVDD to the light emitting diode De according to the data signal applied to the gate through the switching TFT Ts.

[0055] The light emitting diode De displays different gray levels using different currents according to a voltage difference between a voltage corresponding to the data signal and the low level voltage ELVSS.

[0056] Figure 3 is a cross-sectional view showing an organic light emitting diode display device according to a first embodiment of the present disclosure. Figure 3 A bottom emission type organic light emitting diode display device is exemplarily shown.

[0057] exist Figure 3 , the OLED display device 110 includes: a substrate 120; insulating layers 122, 124 and 126; color filter layers 132, 134 and 136; wavelength conversion layers 146, 148 and 150; a first electrode 160; a light emitting layer 162;

[0058] The substrate 120 includes first to fourth sub-pixels SP1 to SP4. For example, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 may correspond to white, red, green, and blue, respectively.

[0059] For example, the first to fourth subpixels SP1 to SP4 may constitute a single pixel. The first subpixel SP1 may have an area ratio of about 0.3 (30%) to about 0.7 (70%) with respect to the single pixel, and each of the second, third, and fourth subpixels SP2, SP3, and SP4 may have an area ratio of about 0.1 (10%) to about 0.3 (30%).

[0060] The gate insulating layer 122, the interlayer insulating layer 124, and the passivation layer 126 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the substrate 120, and the switching TFT Ts( Figure 2 )、Driving TFT Td( Figure 2 ) and the storage capacitor Cs( Figure 2 ) may be disposed between the gate insulating layer 122 , the interlayer insulating layer 124 and the passivation layer 126 .

[0061] For example, a gate insulating layer 122 may be disposed between the gates of the switching TFT Ts and the driving TFT Td and the semiconductor layer, and an interlayer insulating layer 124 may be disposed between the gates and the source and between the gates and the drain of the switching TFT Ts and the driving TFT Td. A passivation layer 126 may be disposed over the source and drain of the switching TFT Ts and the driving TFT Td.

[0062] The first color filter layer 132, the second color filter layer 134, and the third color filter layer 136 may be disposed in the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the passivation layer 126. For example, the first color filter layer 132, the second color filter layer 134, and the third color filter layer 136 may be selectively penetrated by red light, green light, and blue light, respectively, and may selectively transmit red light, green light, and blue light, respectively.

[0063] The first wavelength conversion layer 146 is disposed in the first sub-pixel SP1 over the passivation layer 126 , and the second and third wavelength conversion layers 148 and 150 are disposed over the first and second color filter layers 132 and 134 , respectively.

[0064] The first wavelength conversion layer 146 includes a first wavelength conversion material and a second wavelength conversion material, and the second wavelength conversion layer 148 includes a third wavelength conversion material. The third wavelength conversion layer 150 includes a fourth wavelength conversion material.

[0065] The first, second, third, and fourth wavelength conversion materials of the first, second, and third wavelength conversion layers 146, 148, and 150 absorb light of short wavelengths and emit light of long wavelengths.

[0066] For example, the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may include quantum dots or nanocomposite materials capable of adjusting absorption and emission bands according to the concentration or kind of substances.

[0067] The first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may have an absorption band of about 350 nm to about 650 nm and an emission band of about 450 nm to about 750 nm. The wavelength absorptivity and wavelength emissivity of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may be adjusted according to the composition ratio or type of the material.

[0068] The first wavelength conversion material and the third wavelength conversion material may be identical to each other, and the second wavelength conversion material and the fourth wavelength conversion material may be identical to each other.

[0069] The first wavelength conversion material and the second wavelength conversion material may have different absorption bands and different emission bands from each other, and the third wavelength conversion material and the fourth wavelength conversion material may have different absorption bands and different emission bands from each other.

[0070] For example, the first wavelength conversion material and the third wavelength conversion material may have an absorption band of about 450nm to about 650nm and an emission band of about 550nm to about 750nm, and the second wavelength conversion material and the fourth wavelength conversion material may have an absorption band of about 350nm to about 550nm and an emission band of about 450nm to about 650nm.

[0071] Thus, the first wavelength conversion material and the third wavelength conversion material may absorb blue light and may emit red light, and the second wavelength conversion material and the fourth wavelength conversion material may absorb blue light and may emit green light.

[0072] In another embodiment, a blue color filter layer may be disposed over each of the second wavelength conversion layer 148 and the third wavelength conversion layer 150 of the second subpixel SP2 and the third subpixel SP3. Thus, incident light incident to the second wavelength conversion layer 148 and the third wavelength conversion layer 150 may be limited to blue light to improve wavelength conversion efficiency.

[0073] The first wavelength conversion layer 146 may include a first wavelength conversion pattern 142 including a first wavelength conversion material and a second wavelength conversion pattern 144 including a second wavelength conversion material.

[0074] Figure 4 , Figure 5 and Figure 6 1 and 2 are plan views respectively illustrating first wavelength conversion layers of organic light emitting diode display devices according to the first embodiment, the second embodiment, and the third embodiment of the present disclosure.

[0075] exist Figure 4According to the first embodiment of the present disclosure, a first wavelength conversion layer 146 including a first wavelength conversion pattern 142 (which includes a first wavelength conversion material) and a second wavelength conversion pattern 144 (which includes a second wavelength conversion material) is disposed in a first sub-pixel SP1 of an OLED display device 110 .

[0076] The first wavelength conversion patterns 142 and the second wavelength conversion patterns 144 may have a plurality of stripe shapes, and may be disposed parallel to each other and alternately.

[0077] Therefore, the first subpixel SP1 may be classified into a first region where the first wavelength conversion material is disposed, a second region where the second wavelength conversion material is disposed, and a third region where the first wavelength conversion material and the second wavelength conversion material are not disposed between the first wavelength conversion pattern 142 and the second wavelength conversion pattern 144. The white spectrum of white light emitted from the first subpixel SP1 may be variously adjusted by changing an area ratio of the first region to the third region.

[0078] exist Figure 5 According to the second embodiment of the present disclosure, a first wavelength conversion layer 246 including a first wavelength conversion pattern 242 (which includes a first wavelength conversion material) and a second wavelength conversion pattern 244 (which includes a second wavelength conversion material) is disposed in a first sub-pixel SP1 of an OLED display device.

[0079] The first wavelength conversion pattern 242 and the second wavelength conversion pattern 244 may have a mesh shape.

[0080] Therefore, the first subpixel SP1 may be classified into a first region where the first wavelength conversion material is disposed, a second region where the second wavelength conversion material is disposed, and a third region where the first wavelength conversion material and the second wavelength conversion material are not disposed between the first wavelength conversion pattern 242 and the second wavelength conversion pattern 244. The white spectrum of white light emitted from the first subpixel SP1 may be variously adjusted by changing an area ratio of the first region to the third region.

[0081] exist Figure 6 According to the third embodiment of the present disclosure, a first wavelength conversion layer 346 including a first wavelength conversion pattern 342 (which includes a first wavelength conversion material) and a second wavelength conversion pattern 344 (which includes a second wavelength conversion material) is disposed in a first sub-pixel SP1 of an OLED display device.

[0082] The first and second wavelength conversion patterns 342 and 344 may have a rectangular shape, and may be separated from each other to be disposed parallel to each other and located at the side of the first sub-pixel SP1 .

[0083] Therefore, the first subpixel SP1 may be classified into a first region where the first wavelength conversion material is disposed, a second region where the second wavelength conversion material is disposed, and a third region where the first wavelength conversion material and the second wavelength conversion material are not disposed between the first wavelength conversion pattern 342 and the second wavelength conversion pattern 344. The white spectrum of white light emitted from the first subpixel SP1 may be variously adjusted by changing an area ratio of the first region to the third region.

[0084] Reference again Figure 3 , the first planarization layer 152 is disposed over the first wavelength conversion layer 146 , the second wavelength conversion layer 148 , and the third wavelength conversion layer 150 and the third color filter layer 136 .

[0085] For example, the first planarization layer 152 may include an organic insulating material such as photo acryl.

[0086] The first electrode 160 , the light emitting layer 162 , and the second electrode 164 are sequentially disposed in the first sub-pixel SP1 , the second sub-pixel SP2 , the third sub-pixel SP3 , and the fourth sub-pixel SP4 over the first planarization layer 152 .

[0087] The first electrode 160, the light emitting layer 162, and the second electrode 164 constitute a light emitting diode that emits white light. The first electrode 160 may be disposed in each of the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4, and each of the light emitting layer 162 and the second electrode 164 may be disposed in all of the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4.

[0088] The first electrode 160 and the second electrode 164 may be an anode and a cathode, respectively.

[0089] Although not shown, an encapsulation layer and an encapsulation substrate may be disposed over the second electrode 164 .

[0090] The light emitting layer 162 may have a plurality of stacked layers.

[0091] Figure 7 and Figure 8 1 and 2 are cross-sectional views respectively illustrating light emitting diodes of organic light emitting diode display devices according to the first and fourth embodiments of the present disclosure.

[0092] exist Figure 7 In the embodiment, the light emitting diode of the OLED display device 110 according to the first embodiment of the present disclosure includes a first electrode 160 , a light emitting layer 162 , and a second electrode 164 .

[0093] The light emitting layer 162 includes a first light emitting material layer (EML) 166, a second light emitting material layer 168, and a third light emitting material layer 170 sequentially disposed above the first electrode 160. The first light emitting material layer 166, the second light emitting material layer 168, and the third light emitting material layer 170 may emit first blue light, yellow-green light, and second blue light, respectively.

[0094] Although not shown, a hole injection layer (HIL) and a first hole transport layer (HTL) may be disposed between the first electrode 160 and the first light emitting material layer 166 .

[0095] A first electron transport layer (ETL), a first charge generation layer (CGL), and a second hole transport layer may be disposed between the first light emitting material layer 166 and the second light emitting material layer 168 .

[0096] The second electron transport layer, the second charge generation layer, and the third hole transport layer may be disposed between the second light emitting material layer 168 and the third light emitting material layer 170 .

[0097] A third electron transport layer and an electron injection layer (EIL) may be disposed between the third light emitting material layer 170 and the second electrode 164 .

[0098] The hole injection layer, the first hole transport layer, the first light-emitting material layer 166 and the first electron transport layer may constitute a first stack that emits a first blue light, the second hole transport layer, the second light-emitting material layer 168 and the second electron transport layer may constitute a second stack that emits yellow-green light. The third hole transport layer, the third light-emitting material layer 170, the third electron transport layer and the electron injection layer may constitute a third stack that emits a second blue light.

[0099] Therefore, the light emitting diode of the OLED display device 110 according to the first embodiment of the present disclosure may emit white light in which the first blue light of the first stack, the yellow-green light of the second stack, and the second blue light of the third stack are mixed.

[0100] exist Figure 8 , the light emitting diode of the OLED display device according to the fourth embodiment of the present disclosure includes a first electrode 460 , a light emitting layer 462 and a second electrode 464 .

[0101] The light emitting layer 462 includes a first light emitting material layer (EML) 466, a second light emitting material layer (EML) 468, a third light emitting material layer (EML) 470, and a fourth light emitting material layer (EML) 472, which are sequentially disposed above the first electrode 460. The first light emitting material layer 466, the second light emitting material layer 468, the third light emitting material layer 470, and the fourth light emitting material layer 472 may emit a first blue light, a yellow-green light, a green light, and a second blue light, respectively.

[0102] Although not shown, a hole injection layer (HIL) and a first hole transport layer (HTL) may be disposed between the first electrode 460 and the first light emitting material layer 466 .

[0103] A first electron transport layer (ETL), a first charge generation layer (CGL), and a second hole transport layer may be disposed between the first light emitting material layer 466 and the second light emitting material layer 468 .

[0104] The second electron transport layer, the second charge generation layer, and the third hole transport layer may be disposed between the third light emitting material layer 470 and the fourth light emitting material layer 472 .

[0105] A third electron transport layer and an electron injection layer (EIL) may be disposed between the fourth light emitting material layer 472 and the second electrode 464 .

[0106] The hole injection layer, the first hole transport layer, the first light emitting material layer 466 and the first electron transport layer may constitute a first stack emitting a first blue light, the second hole transport layer, the second light emitting material layer 468, the third light emitting material layer 470 and the second electron transport layer may constitute a second stack emitting yellow-green light and green light. The third hole transport layer, the fourth light emitting material layer 472, the third electron transport layer and the electron injection layer may constitute a third stack emitting a second blue light.

[0107] Therefore, the light emitting diode of the OLED display device according to the fourth embodiment of the present disclosure can emit white light in which the first blue light of the first stack, the yellow-green light of the second stack, the green light of the third stack, and the second blue light of the fourth stack are mixed.

[0108] Reference again Figure 3 , the first light L1 of the light emitting layer 162 is converted into fourth light L4, fifth light L5, sixth light L6 and seventh light L7 by the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4, respectively, and the fourth light L4, the fifth light L5, the sixth light L6 and the seventh light L7 are emitted from the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4, respectively.

[0109] In the first subpixel SP1, the first light L1 of the light emitting layer 162 passes through the gap region between the first wavelength conversion pattern 142 and the second wavelength conversion pattern 144 of the first wavelength conversion layer 146 without being converted and is emitted as the first light L1. The first light L1 is converted by the first wavelength conversion pattern 142 of the first wavelength conversion layer 146 and is emitted as the second light L2, and the first light L1 is converted by the second wavelength conversion pattern 144 of the first wavelength conversion layer 146 and is emitted as the third light L3.

[0110] The first light L1 of the light emitting layer 162 is converted into fourth light L4, in which the first light L1 passing through the gap area between the first wavelength conversion pattern 142 and the second wavelength conversion pattern 144, the second light L2 generated due to the first light wavelength conversion pattern 142, and the third light L3 generated due to the second wavelength conversion pattern 144 are mixed, and the fourth light L4 is emitted from the first subpixel SP1.

[0111] In the second subpixel SP2, the first light L1 of the light emitting layer 162 is converted into the second light L2 by the second wavelength conversion layer 148, and the second light L2 of the second wavelength conversion layer 148 is converted by the first color filter layer 132 to be emitted as the fifth light L5.

[0112] The first light L1 of the light emitting layer 162 is converted into fifth light L5 by the second wavelength conversion layer 148 and the first color filter layer 132 , and the fifth light L5 is emitted from the second sub-pixel SP2 .

[0113] In the third subpixel SP3, the first light L1 of the light emitting layer 162 is converted into the third light L3 by the third wavelength conversion layer 150, and the third light L3 of the third wavelength conversion layer 150 is converted by the second color filter layer 134 to be emitted as the sixth light L6.

[0114] The first light L1 of the light emitting layer 162 is converted into sixth light L6 by the third wavelength conversion layer 150 and the second color filter layer 134, and the sixth light L6 is emitted from the third sub-pixel SP3.

[0115] In the fourth sub-pixel SP4, the first light L1 of the light emitting layer 162 is converted by the third color filter layer 136 to be emitted as the seventh light L7.

[0116] The first light L1 of the light emitting layer 162 is converted into seventh light L7 by the third color filter layer 136, and the seventh light L7 is emitted from the fourth sub-pixel SP4.

[0117] The fourth light L4, the fifth light L5, the sixth light L6, and the seventh light L7 may be white light, red light, green light, and blue light, respectively.

[0118] Fig. 9 is a diagram showing a spectrum of fourth light of a first sub-pixel of an organic light emitting diode display device according to a first embodiment of the present disclosure, Fig.10 is a diagram showing spectrums of fifth light, sixth light, and seventh light of second, third, and fourth sub-pixels of the organic light emitting diode display device according to the first embodiment of the present disclosure.

[0119] exist Fig. 9, the fourth light L4 emitted from the first subpixel SP1 of the OLED display device 110 according to the first embodiment of the present disclosure may be white light including a first component C1 corresponding to blue light, a second component C2 corresponding to green light, and a third component C3 corresponding to red light.

[0120] The spectra (intensity relative to wavelength) of the second component C2 and the third component C3 may be adjusted differently by changing the composition ratio or type of the first wavelength conversion material of the first wavelength conversion pattern 142 of the first wavelength conversion layer 146 and the second wavelength conversion material of the second wavelength conversion pattern 144. Therefore, the spectrum of the fourth light L4 emitted from the first subpixel SP1 may be adjusted differently.

[0121] exist Fig.10 , the fifth light L5 , the sixth light L6 , and the seventh light L7 emitted from the second subpixel SP2 , the third subpixel SP3 , and the fourth subpixel SP4 of the OLED display device 110 according to the first embodiment of the present disclosure may be red light, green light, and blue light, respectively.

[0122] The spectrum of the fifth light L5 emitted from the second sub-pixel SP2 may be variously adjusted by changing the composition ratio or kind of the substance of the third wavelength conversion material of the second wavelength conversion layer 148 .

[0123] The spectrum of the sixth light L6 emitted from the third subpixel SP3 may be variously adjusted by changing the composition ratio or kind of the substance of the fourth wavelength conversion material of the third wavelength conversion layer 150 .

[0124] In the OLED display device 110 according to the first embodiment of the present disclosure, the white spectrum of the fourth light L4 of the first sub-pixel SP1, the red spectrum of the fifth light L5 of the second sub-pixel SP2, and the green spectrum of the sixth light L6 of the third sub-pixel SP3 can be adjusted differently by changing the composition ratio or type of the substances of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material. Therefore, various white spectrums with high color temperature and high brightness can be obtained.

[0125] In addition, since the white light of the light emitting layer 162 is converted into red light and green light using the second wavelength conversion pattern 148 and the third wavelength conversion pattern 150 of the second sub-pixel SP2 and the third sub-pixel SP3, the thickness of the first color filter layer 132 and the second color filter layer 134 of the second sub-pixel SP2 and the third sub-pixel SP3 is reduced. Therefore, the light emitting efficiency is improved.

[0126] In addition, since red light, green light, and blue light are emitted through the first, second, and third color filter layers 132, 134, and 136 of the second, third, and fourth subpixels SP2, SP3, and SP4, respectively, color reproducibility is improved.

[0127] In another embodiment, microlenses may be used to improve light extraction efficiency.

[0128] Fig.11 1 is a cross-sectional view showing an organic light emitting diode display device according to a fifth embodiment of the present disclosure. Description of the same parts of the fifth embodiment as the first embodiment will be omitted.

[0129] exist Fig.11 , the OLED display device 510 includes: a substrate 520; insulating layers 522, 524 and 526; color filter layers 532, 534 and 536; wavelength conversion layers 546, 548 and 550; a plurality of micro lenses 538; a first electrode 560; a light emitting layer 562; and a second electrode 564.

[0130] The substrate 520 includes first to fourth sub-pixels SP1 to SP4. For example, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 may correspond to white, red, green, and blue, respectively.

[0131] For example, the first to fourth subpixels SP1 to SP4 may constitute a single pixel. The first subpixel SP1 may have an area ratio of about 0.3 (30%) to about 0.7 (70%) with respect to the single pixel, and each of the second, third, and fourth subpixels SP2, SP3, and SP4 may have an area ratio of about 0.1 (10%) to about 0.3 (30%).

[0132] The gate insulating layer 522, the interlayer insulating layer 524, and the passivation layer 526 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the substrate 520, and the switching TFT Ts( Figure 2 )、Driving TFT Td( Figure 2 ) and the storage capacitor Cs( Figure 2 ) can be arranged between the gate insulating layer 522, the interlayer insulating layer 524 and the passivation layer 526.

[0133] For example, a gate insulating layer 522 may be disposed between the gates of the switching TFT Ts and the driving TFT Td and the semiconductor layer, and an interlayer insulating layer 524 may be disposed between the gate and the source and between the gate and the drain of the switching TFT Ts and the driving TFT Td. A passivation layer 526 may be disposed over the source and drain of the switching TFT Ts and the driving TFT Td.

[0134] The first, second, and third color filter layers 532 , 534 , and 536 may be disposed in the second, third, and fourth subpixels SP2 , SP3 , and SP4 over the passivation layer 526 .

[0135] The first wavelength conversion layer 546 is disposed in the first subpixel SP1 over the passivation layer 526 , and the second and third wavelength conversion layers 548 and 550 are disposed over the first and second color filter layers 532 and 534 , respectively.

[0136] The first wavelength conversion layer 546 includes a first wavelength conversion material and a second wavelength conversion material, and the second wavelength conversion layer 548 includes a third wavelength conversion material. The third wavelength conversion layer 550 includes a fourth wavelength conversion material.

[0137] For example, the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may include quantum dots or nanocomposite materials capable of adjusting absorption and emission bands according to the concentration or kind of substances.

[0138] The first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may have an absorption band of about 350 nm to about 650 nm and an emission band of about 450 nm to about 750 nm. The wavelength absorptivity and wavelength emissivity of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may be adjusted according to the composition ratio or type of the material.

[0139] For example, the first wavelength conversion material and the third wavelength conversion material may absorb blue light and may emit red light, and the second wavelength conversion material and the fourth wavelength conversion material may absorb blue light and may emit green light.

[0140] A first planarization layer 552 is disposed over the first, second, and third wavelength conversion layers 546 , 548 , and 550 and the third color filter layer 536 , and a plurality of microlenses 538 having an uneven shape are disposed over a top surface of the first planarization layer 552 .

[0141] For example, the first planarization layer 552 and the plurality of micro lenses 538 may include an organic insulating material such as photo acryl.

[0142] In addition, the first planarization layer 552 and the plurality of micro lenses 538 may be formed through a single photolithography process using a semi-transmissive mask including a transmissive region, a semi-transmissive region, and a blocking region.

[0143] The first planarization layer 552 and the plurality of micro lenses 538 may have the same refractive index. For example, the first planarization layer 552 and each of the plurality of micro lenses 538 may have a refractive index of about 1.45 to about 1.55.

[0144] Each of the plurality of micro lenses 538 may have a convex lens shape.

[0145] Although the plurality of microlenses 538 are spaced apart from each other in the fifth embodiment, in another embodiment, at least two of the plurality of microlenses 538 may be in contact with each other.

[0146] The first electrode 560, the light emitting layer 562 and the second electrode 564 are sequentially disposed in the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4 over the first planarization layer 552. The first electrode 560, the light emitting layer 562 and the second electrode 564 constitute a light emitting diode that emits white light.

[0147] Due to the plurality of micro lenses 538 , the first electrode 560 , the light emitting layer 562 , and the second electrode 564 may have an uneven shape.

[0148] In the OLED display device 510 according to the fifth embodiment of the present disclosure, light blocked by total reflection at the interface between the first electrode 560 and the first planarization layer 552 is minimized due to the plurality of micro lenses 538. Therefore, light emission efficiency is improved.

[0149] In addition, the white spectrum of the first sub-pixel SP1, the red spectrum of the second sub-pixel SP2, and the green spectrum of the third sub-pixel SP3 can be adjusted differently by changing the composition ratio or type of the substances of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material. Therefore, various white spectrums with high color temperature and high brightness can be obtained.

[0150] In addition, since the white light of the light emitting layer 562 is converted into red light and green light using the second wavelength conversion pattern 548 and the third wavelength conversion pattern 550 of the second sub-pixel SP2 and the third sub-pixel SP3, the thickness of the first color filter layer 532 and the second color filter layer 534 of the second sub-pixel SP2 and the third sub-pixel SP3 is reduced. Therefore, the light emitting efficiency is improved.

[0151] In addition, since red light, green light, and blue light are emitted through the first, second, and third color filter layers 532, 534, and 536 of the second, third, and fourth subpixels SP2, SP3, and SP4, respectively, color reproducibility is improved.

[0152] In another embodiment, a plurality of micro lenses may have a concave lens shape and may be disposed to be in contact with each other.

[0153] Fig.12 1 is a cross-sectional view showing an organic light emitting diode display device according to a sixth embodiment of the present disclosure. Description of the same parts of the sixth embodiment as the first embodiment will be omitted.

[0154] exist Fig.12 , the OLED display device 610 includes: a substrate 620; insulating layers 622, 624 and 626; color filter layers 632, 634 and 636; wavelength conversion layers 646, 648 and 650; a plurality of micro lenses 638; a first electrode 660; a light emitting layer 662; and a second electrode 664.

[0155] The substrate 620 includes first to fourth sub-pixels SP1 to SP4. For example, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 may correspond to white, red, green, and blue, respectively.

[0156] For example, the first to fourth subpixels SP1 to SP4 may constitute a single pixel. The first subpixel SP1 may have an area ratio of about 0.3 (30%) to about 0.7 (70%) with respect to the single pixel, and each of the second, third, and fourth subpixels SP2, SP3, and SP4 may have an area ratio of about 0.1 (10%) to about 0.3 (30%).

[0157] The gate insulating layer 622, the interlayer insulating layer 624, and the passivation layer 626 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the substrate 620, and the switching TFT Ts( Figure 2 )、Driving TFT Td( Figure 2 ) and the storage capacitor Cs( Figure 2 ) can be arranged between the gate insulating layer 622, the interlayer insulating layer 624 and the passivation layer 626.

[0158] For example, a gate insulating layer 622 may be disposed between the gates of the switching TFT Ts and the driving TFT Td and the semiconductor layer, and an interlayer insulating layer 624 may be disposed between the gate and the source and between the gate and the drain of the switching TFT Ts and the driving TFT Td. A passivation layer 626 may be disposed over the source and drain of the switching TFT Ts and the driving TFT Td.

[0159] The first, second, and third color filter layers 632 , 634 , and 636 may be disposed in the second, third, and fourth subpixels SP2 , SP3 , and SP4 over the passivation layer 626 .

[0160] The first wavelength conversion layer 646 is disposed in the first subpixel SP1 over the passivation layer 626 , and the second and third wavelength conversion layers 648 and 650 are disposed over the first and second color filter layers 632 and 634 , respectively.

[0161] The first wavelength conversion layer 646 includes a first wavelength conversion material and a second wavelength conversion material, and the second wavelength conversion layer 648 includes a third wavelength conversion material. The third wavelength conversion layer 650 includes a fourth wavelength conversion material.

[0162] For example, the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may include quantum dots or nanocomposite materials capable of adjusting absorption and emission bands according to the concentration or kind of substances.

[0163] The first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may have an absorption band of about 350 nm to about 650 nm and an emission band of about 450 nm to about 750 nm. The wavelength absorptivity and wavelength emissivity of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may be adjusted according to the composition ratio or type of the material.

[0164] For example, the first wavelength conversion material and the third wavelength conversion material may absorb blue light and may emit red light, and the second wavelength conversion material and the fourth wavelength conversion material may absorb blue light and may emit green light.

[0165] A first planarization layer 652 is disposed over the first, second, and third wavelength conversion layers 646 , 648 , and 650 and the third color filter layer 636 , and a plurality of microlenses 638 having an uneven shape are disposed over a top surface of the first planarization layer 652 .

[0166] For example, the first planarization layer 652 and the plurality of micro lenses 638 may include an organic insulating material such as photo acryl.

[0167] In addition, the first planarization layer 652 and the plurality of micro lenses 638 may be formed through a single photolithography process using a semi-transmissive mask including a transmissive region, a semi-transmissive region, and a blocking region.

[0168] The first planarization layer 652 and the plurality of micro lenses 638 may have the same refractive index. For example, the first planarization layer 652 and each of the plurality of micro lenses 638 may have a refractive index of about 1.45 to about 1.55.

[0169] Each of the plurality of micro lenses 638 may have a concave lens shape and may be disposed to be in contact with each other.

[0170] Although the plurality of microlenses 638 are in contact with each other in the sixth embodiment, in another embodiment, at least two of the plurality of microlenses 638 may be spaced apart from each other.

[0171] The first electrode 660, the light emitting layer 662 and the second electrode 664 are sequentially disposed in the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4 over the first planarization layer 652. The first electrode 660, the light emitting layer 662 and the second electrode 664 constitute a light emitting diode emitting white light.

[0172] Due to the plurality of micro lenses 638 , the first electrode 660 , the light emitting layer 662 , and the second electrode 664 may have an uneven shape.

[0173] In the OLED display device 610 according to the sixth embodiment of the present disclosure, light blocked by total reflection at the interface between the first electrode 660 and the first planarization layer 652 is minimized due to the plurality of micro lenses 638. Therefore, light emission efficiency is improved.

[0174] In addition, the white spectrum of the first sub-pixel SP1, the red spectrum of the second sub-pixel SP2, and the green spectrum of the third sub-pixel SP3 can be adjusted differently by changing the composition ratio or type of the substances of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material. Therefore, various white spectrums with high color temperature and high brightness can be obtained.

[0175] In addition, since the white light of the light emitting layer 662 is converted into red light and green light using the second wavelength conversion pattern 648 and the third wavelength conversion pattern 650 of the second sub-pixel SP2 and the third sub-pixel SP3, the thickness of the first color filter layer 632 and the second color filter layer 634 of the second sub-pixel SP2 and the third sub-pixel SP3 is reduced. Therefore, the light emitting efficiency is improved.

[0176] In addition, since red light, green light, and blue light are emitted through the first, second, and third color filter layers 632, 634, and 636 of the second, third, and fourth subpixels SP2, SP3, and SP4, respectively, color reproducibility is improved.

[0177] Fig.13 2 is a cross-sectional view showing an organic light emitting diode display device according to a seventh embodiment of the present disclosure. Description of the same parts of the seventh embodiment as the first embodiment will be omitted.

[0178] exist Fig.13 , the OLED display device 710 includes: a substrate 720; insulating layers 722, 724 and 726; color filter layers 732, 734 and 736; wavelength conversion layers 746, 748 and 750; a plurality of micro lenses 738; a first electrode 760; a light emitting layer 762; and a second electrode 764.

[0179] The substrate 720 includes first to fourth sub-pixels SP1 to SP4. For example, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 may correspond to white, red, green, and blue, respectively.

[0180] For example, the first to fourth subpixels SP1 to SP4 may constitute a single pixel. The first subpixel SP1 may have an area ratio of about 0.3 (30%) to about 0.7 (70%) with respect to the single pixel, and each of the second, third, and fourth subpixels SP2, SP3, and SP4 may have an area ratio of about 0.1 (10%) to about 0.3 (30%).

[0181] The gate insulating layer 722, the interlayer insulating layer 724, and the passivation layer 726 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the substrate 720, and the switching TFT Ts( Figure 2 )、Driving TFT Td( Figure 2 ) and the storage capacitor Cs( Figure 2 ) can be arranged between the gate insulating layer 722, the interlayer insulating layer 724 and the passivation layer 726.

[0182] For example, a gate insulating layer 722 may be disposed between the gates of the switching TFT Ts and the driving TFT Td and the semiconductor layer, and an interlayer insulating layer 724 may be disposed between the gate and the source and between the gate and the drain of the switching TFT Ts and the driving TFT Td. A passivation layer 726 may be disposed over the source and drain of the switching TFT Ts and the driving TFT Td.

[0183] The first, second, and third color filter layers 732 , 734 , and 736 may be disposed in the second, third, and fourth subpixels SP2 , SP3 , and SP4 over the passivation layer 726 .

[0184] The first wavelength conversion layer 746 is disposed in the first subpixel SP1 over the passivation layer 726 , and the second and third wavelength conversion layers 748 and 750 are disposed over the first and second color filter layers 732 and 734 , respectively.

[0185] The first wavelength conversion layer 746 includes a first wavelength conversion material and a second wavelength conversion material, and the second wavelength conversion layer 748 includes a third wavelength conversion material. The third wavelength conversion layer 750 includes a fourth wavelength conversion material.

[0186] For example, the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may include quantum dots or nanocomposite materials capable of adjusting absorption and emission bands according to the concentration or kind of substances.

[0187] The first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may have an absorption band of about 350 nm to about 650 nm and an emission band of about 450 nm to about 750 nm. The wavelength absorptivity and wavelength emissivity of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may be adjusted according to the composition ratio or type of the material.

[0188] For example, the first wavelength conversion material and the third wavelength conversion material may absorb blue light and may emit red light, and the second wavelength conversion material and the fourth wavelength conversion material may absorb blue light and may emit green light.

[0189] A first planarizing layer 752 is disposed over the first, second, and third wavelength conversion layers 746 , 748 , and 750 and the third color filter layer 736 , and a plurality of microlenses 738 having an uneven shape are disposed over a top surface of the first planarizing layer 752 .

[0190] For example, the first planarization layer 752 and the plurality of micro lenses 738 may include an organic insulating material such as photo acryl.

[0191] The first planarization layer 752 and the plurality of micro lenses 738 may have different refractive indices. For example, the refractive index of the first planarization layer 752 may be greater than the refractive index of the plurality of micro lenses 738.

[0192] For example, the first planarization layer 752 may have a refractive index of about 1.45 to about 1.55, and the plurality of microlenses 738 may have a refractive index equal to or less than about 1.4.

[0193] Although each of the plurality of microlenses 738 exemplarily has a convex lens shape in the seventh embodiment, in another embodiment, each of the plurality of microlenses 738 may have a concave lens shape.

[0194] Although the plurality of microlenses 738 are spaced apart from each other in the seventh embodiment, in another embodiment, at least two of the plurality of microlenses 738 may be in contact with each other.

[0195] The first electrode 760, the light emitting layer 762 and the second electrode 764 are sequentially disposed in the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4 over the first planarization layer 752. The first electrode 760, the light emitting layer 762 and the second electrode 764 constitute a light emitting diode emitting white light.

[0196] Due to the plurality of micro lenses 738 , the first electrode 760 , the light emitting layer 762 , and the second electrode 764 may have an uneven shape.

[0197] In the OLED display device 710 according to the seventh embodiment of the present disclosure, light blocked by total reflection at the interface between the first electrode 760 and the first planarization layer 752 is minimized due to the plurality of micro lenses 738. Therefore, light emission efficiency is improved.

[0198] In addition, the white spectrum of the first sub-pixel SP1, the red spectrum of the second sub-pixel SP2, and the green spectrum of the third sub-pixel SP3 can be adjusted differently by changing the composition ratio or type of the substances of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material. Therefore, various white spectrums with high color temperature and high brightness can be obtained.

[0199] In addition, since the white light of the light emitting layer 762 is converted into red light and green light using the second wavelength conversion pattern 748 and the third wavelength conversion pattern 750 of the second sub-pixel SP2 and the third sub-pixel SP3, the thickness of the first color filter layer 732 and the second color filter layer 734 of the second sub-pixel SP2 and the third sub-pixel SP3 is reduced. Therefore, the light emitting efficiency is improved.

[0200] In addition, since red light, green light, and blue light are emitted through the first, second, and third color filter layers 732, 734, and 736 of the second, third, and fourth subpixels SP2, SP3, and SP4, respectively, color reproducibility is improved.

[0201] Fig.14 1 is a cross-sectional view showing an organic light emitting diode display device according to an eighth embodiment of the present disclosure. Description of the same parts of the eighth embodiment as the first embodiment will be omitted.

[0202] exist Fig.14 , the OLED display device 810 includes: a substrate 820; insulating layers 822, 824 and 826; color filter layers 832, 834 and 836; wavelength conversion layers 846, 848 and 850; a plurality of micro lenses 838; a first electrode 860; a light emitting layer 862; and a second electrode 864.

[0203] The substrate 820 includes first to fourth sub-pixels SP1 to SP4. For example, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 may correspond to white, red, green, and blue, respectively.

[0204] For example, the first to fourth subpixels SP1 to SP4 may constitute a single pixel. The first subpixel SP1 may have an area ratio of about 0.3 (30%) to about 0.7 (70%) with respect to the single pixel, and each of the second, third, and fourth subpixels SP2, SP3, and SP4 may have an area ratio of about 0.1 (10%) to about 0.3 (30%).

[0205] The gate insulating layer 822, the interlayer insulating layer 824, and the passivation layer 826 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the substrate 820, and the switching TFT Ts( Figure 2 )、Driving TFT Td( Figure 2 ) and the storage capacitor Cs( Figure 2 ) can be arranged between the gate insulating layer 822, the interlayer insulating layer 824 and the passivation layer 826.

[0206] For example, a gate insulating layer 822 may be disposed between the gates of the switching TFT Ts and the driving TFT Td and the semiconductor layer, and an interlayer insulating layer 824 may be disposed between the gate and the source and between the gate and the drain of the switching TFT Ts and the driving TFT Td. A passivation layer 826 may be disposed over the source and drain of the switching TFT Ts and the driving TFT Td.

[0207] The first, second, and third color filter layers 832 , 834 , and 836 may be disposed in the second, third, and fourth subpixels SP2 , SP3 , and SP4 over the passivation layer 826 .

[0208] A plurality of microlenses 838 having uneven shapes are disposed over the passivation layer 826 in the first subpixel SP1 and over the first, second, and third color filter layers 832 , 834 , and 836 , and a first planarization layer 840 is disposed over the plurality of microlenses 838 .

[0209] The first wavelength conversion layer 846 , the second wavelength conversion layer 848 , and the third wavelength conversion layer 850 are disposed over the first planarization layer 840 in the first sub-pixel SP1 , the second sub-pixel SP2 , and the third sub-pixel SP2 , respectively.

[0210] The first wavelength conversion layer 846 includes a first wavelength conversion material and a second wavelength conversion material, and the second wavelength conversion layer 848 includes a third wavelength conversion material. The third wavelength conversion layer 850 includes a fourth wavelength conversion material.

[0211] For example, the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may include quantum dots or nanocomposite materials capable of adjusting absorption and emission bands according to the concentration or kind of substances.

[0212] The first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may have an absorption band of about 350 nm to about 650 nm and an emission band of about 450 nm to about 750 nm. The wavelength absorptivity and wavelength emissivity of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may be adjusted according to the composition ratio or type of the material.

[0213] For example, the first wavelength conversion material and the third wavelength conversion material may absorb blue light and may emit red light, and the second wavelength conversion material and the fourth wavelength conversion material may absorb blue light and may emit green light.

[0214] The second planarization layer 852 is disposed over the first wavelength conversion layer 846 , the second wavelength conversion layer 848 , and the third wavelength conversion layer 850 , and over the first planarization layer 840 of the fourth subpixel SP4 .

[0215] For example, the first and second planarization layers 840 and 852 and the plurality of micro lenses 838 may include an organic insulating material such as photo-acryl.

[0216] The first planarization layer 840 and the second planarization layer 852 may have the same refractive index, and the first planarization layer 840 and the second planarization layer 852 and the plurality of microlenses 838 may have different refractive indexes.

[0217] For example, the first planarization layer 840 and the second planarization layer 852 may have a refractive index of about 1.45 to about 1.55, and the plurality of microlenses 838 may have a refractive index equal to or less than about 1.4.

[0218] Although each of the plurality of microlenses 838 exemplarily has a convex lens shape in the eighth embodiment, in another embodiment, each of the plurality of microlenses 838 may have a concave lens shape.

[0219] Although the plurality of microlenses 838 are spaced apart from each other in the eighth embodiment, in another embodiment, at least two of the plurality of microlenses 838 may be in contact with each other.

[0220] The first electrode 860, the light emitting layer 862 and the second electrode 864 are sequentially disposed in the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4 over the second planarization layer 852. The first electrode 860, the light emitting layer 862 and the second electrode 864 constitute a light emitting diode that emits white light.

[0221] In the OLED display device 810 according to the eighth embodiment of the present disclosure, light blocked by total reflection at the interface between the first planarization layer 840 and the substrate 820 and at the interface between the first planarization layer 840 and the color filter layers 832, 834, and 836 is minimized due to the plurality of microlenses 838. Therefore, light emitting efficiency is improved.

[0222] In addition, the white spectrum of the first sub-pixel SP1, the red spectrum of the second sub-pixel SP2, and the green spectrum of the third sub-pixel SP3 can be adjusted differently by changing the composition ratio or type of the substances of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material. Therefore, various white spectrums with high color temperature and high brightness can be obtained.

[0223] In addition, since the white light of the light emitting layer 862 is converted into red light and green light using the second wavelength conversion pattern 848 of the second sub-pixel SP2 and the third wavelength conversion pattern 850 of the third sub-pixel SP3, the thickness of the first color filter layer 832 and the second color filter layer 834 of the second sub-pixel SP2 and the third sub-pixel SP3 is reduced. Therefore, the light emitting efficiency is improved.

[0224] In addition, since red light, green light, and blue light are emitted through the first, second, and third color filter layers 832, 834, and 836 of the second, third, and fourth subpixels SP2, SP3, and SP4, respectively, color reproducibility is improved.

[0225] Fig.151 is a cross-sectional view showing an organic light emitting diode display device according to a ninth embodiment of the present disclosure. Description of the same parts of the ninth embodiment as the first embodiment will be omitted.

[0226] exist Fig.15 , the OLED display device 910 includes: a substrate 920; insulating layers 922, 924 and 926; color filter layers 932, 934 and 936; wavelength conversion layers 946, 948 and 950; a plurality of micro lenses 938; a first electrode 960; a light emitting layer 962; and a second electrode 964.

[0227] The substrate 920 includes first to fourth sub-pixels SP1 to SP4. For example, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 may correspond to white, red, green, and blue, respectively.

[0228] For example, the first to fourth subpixels SP1 to SP4 may constitute a single pixel. The first subpixel SP1 may have an area ratio of about 0.3 (30%) to about 0.7 (70%) with respect to the single pixel, and each of the second, third, and fourth subpixels SP2, SP3, and SP4 may have an area ratio of about 0.1 (10%) to about 0.3 (30%).

[0229] The gate insulating layer 922, the interlayer insulating layer 924, and the passivation layer 926 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 over the substrate 920, and the switching TFT Ts( Figure 2 )、Driving TFT Td( Figure 2 ) and the storage capacitor Cs( Figure 2 ) can be arranged between the gate insulating layer 922, the interlayer insulating layer 924 and the passivation layer 926.

[0230] For example, a gate insulating layer 922 may be disposed between the gates of the switching TFT Ts and the driving TFT Td and the semiconductor layer, and an interlayer insulating layer 924 may be disposed between the gates and the source and between the gates and the drain of the switching TFT Ts and the driving TFT Td. A passivation layer 926 may be disposed over the source and drain of the switching TFT Ts and the driving TFT Td.

[0231] A plurality of micro lenses 938 having an uneven shape are disposed over the passivation layer 926 in the first sub-pixel SP1 , the second sub-pixel SP2 , the third sub-pixel SP3 , and the fourth sub-pixel SP4 .

[0232] The first, second, and third color filter layers 932 , 934 , and 936 may be disposed in the second, third, and fourth subpixels SP2 , SP4 over the plurality of microlenses 938 .

[0233] The first planarization layer 940 is disposed over the plurality of micro lenses 938 of the first sub-pixel SP1 , and over the first, second, and third color filter layers 932 , 934 , and 936 .

[0234] The first wavelength conversion layer 946 , the second wavelength conversion layer 948 , and the third wavelength conversion layer 950 are disposed over the first planarization layer 940 in the first sub-pixel SP1 , the second sub-pixel SP2 , and the third sub-pixel SP2 , respectively.

[0235] The first wavelength conversion layer 946 includes a first wavelength conversion material and a second wavelength conversion material, and the second wavelength conversion layer 948 includes a third wavelength conversion material. The third wavelength conversion layer 950 includes a fourth wavelength conversion material.

[0236] For example, the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may include quantum dots or nanocomposite materials capable of adjusting absorption and emission bands according to the concentration or kind of substances.

[0237] The first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may have an absorption band of about 350 nm to about 650 nm and an emission band of about 450 nm to about 750 nm. The wavelength absorptivity and wavelength emissivity of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material may be adjusted according to the composition ratio or type of the material.

[0238] For example, the first wavelength conversion material and the third wavelength conversion material may absorb blue light and may emit red light, and the second wavelength conversion material and the fourth wavelength conversion material may absorb blue light and may emit green light.

[0239] The second planarization layer 952 is disposed over the first wavelength conversion layer 946 , the second wavelength conversion layer 948 , and the third wavelength conversion layer 950 , and over the first planarization layer 940 of the fourth subpixel SP4 .

[0240] For example, the first and second planarization layers 940 and 952 and the plurality of micro lenses 938 may include an organic insulating material such as photo-acryl.

[0241] The first planarization layer 940 and the second planarization layer 952 may have the same refractive index, and the first planarization layer 940 and the second planarization layer 952 and the plurality of microlenses 938 may have different refractive indexes.

[0242] For example, the first and second planarization layers 940 and 952 may have a refractive index of about 1.45 to about 1.55, and the plurality of microlenses 938 may have a refractive index equal to or less than about 1.4.

[0243] Although each of the plurality of microlenses 938 exemplarily has a convex lens shape in the ninth embodiment, in another embodiment, each of the plurality of microlenses 938 may have a concave lens shape.

[0244] Although the plurality of microlenses 938 are spaced apart from each other in the ninth embodiment, in another embodiment, at least two of the plurality of microlenses 938 may be in contact with each other.

[0245] The first electrode 960, the light emitting layer 962 and the second electrode 964 are sequentially disposed in the first subpixel SP1, the second subpixel SP2, the third subpixel SP3 and the fourth subpixel SP4 over the second planarization layer 952. The first electrode 960, the light emitting layer 962 and the second electrode 964 constitute a light emitting diode that emits white light.

[0246] In the OLED display device 910 according to the ninth embodiment of the present disclosure, light blocked by total reflection at the interface between the first planarization layer 940 and the substrate 920 and at the interface between the color filter layers 932, 934, and 936 and the substrate 920 is minimized due to the plurality of microlenses 938. Therefore, light emitting efficiency is improved.

[0247] In addition, the white spectrum of the first sub-pixel SP1, the red spectrum of the second sub-pixel SP2, and the green spectrum of the third sub-pixel SP3 can be adjusted differently by changing the composition ratio or type of the substances of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material. Therefore, various white spectrums with high color temperature and high brightness can be obtained.

[0248] In addition, since the white light of the light emitting layer 962 is converted into red light and green light using the second wavelength conversion pattern 948 of the second sub-pixel SP2 and the third wavelength conversion pattern 950 of the third sub-pixel SP3, the thickness of the first color filter layer 932 and the second color filter layer 934 of the second sub-pixel SP2 and the third sub-pixel SP3 is reduced. Therefore, the light emitting efficiency is improved.

[0249] In addition, since red light, green light, and blue light are emitted through the first, second, and third color filter layers 932, 934, and 936 of the second, third, and fourth subpixels SP2, SP3, and SP4, respectively, color reproducibility is improved.

[0250] Therefore, in the OLED display device according to the present disclosure, since white light of the light emitting layer is converted into light of different colors using the wavelength conversion layer, various white spectra with high color temperature and high brightness can be obtained.

[0251] In addition, since the white light of the light emitting layer is converted into light of different colors using the wavelength conversion layer and light of a specific color among the white light of the light emitting layer passes through the color filter layer, various white spectra are obtained and color reproducibility is improved.

[0252] It will be apparent to those skilled in the art that various modifications and variations may be made to the present invention without departing from the spirit or scope of the present invention. Therefore, the present invention is intended to cover modifications and variations of the invention as long as these modifications and variations are within the scope of the appended claims and their equivalents.

Claims

1. An organic light emitting diode display device, comprising: A substrate having a first sub-pixel, a second sub-pixel, and a third sub-pixel; A passivation layer, located on the substrate; a first color filter layer, a second color filter layer, and a third color filter layer, wherein the first color filter layer, the second color filter layer, and the third color filter layer are located on the passivation layer in the first sub-pixel, the second sub-pixel, and the third sub-pixel, respectively; a first wavelength conversion layer and a second wavelength conversion layer, the first wavelength conversion layer and the second wavelength conversion layer being located above the first color filter layer and the second color filter layer in the first sub-pixel and the second sub-pixel, respectively; a first planarization layer, located on the first wavelength conversion layer and the second wavelength conversion layer, wherein the first planarization layer is disposed between the first wavelength conversion layer and the second wavelength conversion layer in a boundary portion between the first sub-pixel, the second sub-pixel, and the third sub-pixel; A first electrode, located on the passivation layer; A light-emitting layer, located on the first electrode, the light-emitting layer at least comprising a first light-emitting material layer and a second light-emitting material layer that emit blue light; as well as The second electrode is located on the light-emitting layer.

2. The device according to claim 1, wherein: The light-emitting layer further comprises: A third light-emitting material layer, between the first light-emitting material layer and the second light-emitting material layer, emitting yellow-green light; a first charge generation layer between the first light emitting material layer and the third light emitting material layer; and The second charge generation layer is between the third light emitting material layer and the second light emitting material layer.

3. The device according to claim 2, wherein: The light-emitting layer further comprises: a fourth light-emitting material layer, between the third light-emitting material layer and the second light-emitting material layer and emitting green light; and The third charge generation layer is between the third light emitting material layer and the fourth light emitting material layer. 4 . The device of claim 1 , further comprising a second planarization layer between the first, second, and third color filter layers and the first and second wavelength conversion layers.

5. The device according to claim 4, wherein: The second planarization layer directly contacts the first, second, and third color filter layers and the first and second wavelength conversion layers.

6. The device according to claim 1, wherein: The substrate further has a fourth sub-pixel, Wherein, the fourth sub-pixel is provided with a third wavelength conversion layer, The third wavelength conversion layer includes a first wavelength conversion pattern and a second wavelength conversion pattern, the first wavelength conversion pattern includes a first wavelength conversion material, and the second wavelength conversion pattern includes a second wavelength conversion material.

7. The device according to claim 6, wherein: The first wavelength conversion layer and the second wavelength conversion layer include a third wavelength conversion material and a fourth wavelength conversion material, respectively.

8. The device according to claim 7, wherein: Each of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material includes one of a quantum dot and a nanocomposite material.

9. The device according to claim 7, wherein: Each of the first wavelength conversion material, the second wavelength conversion material, the third wavelength conversion material, and the fourth wavelength conversion material has an absorption band of 350 nm to 650 nm and an emission band of 450 nm to 750 nm.

10. The device according to claim 7, wherein: The first sub-pixel, the second sub-pixel, the third sub-pixel and the fourth sub-pixel correspond to red, green, blue and white, respectively. The first color filter layer, the second color filter layer and the third color filter layer selectively transmit red light, green light and blue light respectively. wherein the first wavelength conversion material and the third wavelength conversion material absorb the blue light and emit the red light, and The second wavelength conversion material and the fourth wavelength conversion material absorb the blue light and emit the green light.

11. The device according to claim 6, wherein: Each of the first wavelength conversion pattern and the second wavelength conversion pattern is in a shape of a plurality of long stripes, and the third wavelength conversion layer including the first wavelength conversion pattern and the second wavelength conversion pattern has a mesh shape. 12 . The device of claim 1 , further comprising a plurality of micro lenses disposed between the substrate and the light emitting diode and having an uneven shape.

13. The device according to claim 12, wherein: The plurality of micro lenses are disposed between the substrate and the second planarization layer.

14. The device according to claim 13, wherein: The plurality of micro lenses are disposed between the first, second, and third color filter layers and the second planarization layer.

15. The device according to claim 13, wherein: The plurality of micro lenses are disposed between the substrate and the first, second, and third color filter layers.

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