Display device

Abstract

A display device is provided. The display device includes: a substrate including a display area and a non-display area; a light emitting element layer disposed on the display area of the substrate; an opposing substrate that faces the substrate; a low refractive layer disposed on a surface of the opposing substrate; a first capping layer disposed on a surface of the low refractive layer; a second capping layer disposed on a surface of the first capping layer; a spacer layer disposed on a surface of the second capping layer; a first coupling member disposed between the substrate and the opposing substrate, and coupling the substrate to the opposing substrate; and a second coupling member disposed on a side surface of the substrate and a side surface of the opposing substrate, and coupling the substrate to the opposing substrate. The first coupling member extends to the spacer layer. The first coupling member includes a first moisture absorbent.

Description

Technical Field

[0001] The present disclosure relates to a display device. Background Art

[0002] With the progress of information society, more and more demands are put forward for display devices that display images in various ways. For example, display devices are used in various electronic devices (such as smart phones, digital cameras, laptop computers, navigation devices and smart TVs).

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, and a light-emitting display device. Examples of light-emitting display devices include organic light-emitting display devices composed of organic light-emitting elements, inorganic light-emitting display devices composed of inorganic light-emitting elements such as inorganic semiconductors, and micro light-emitting display devices composed of micro light-emitting elements.

[0004] The organic light emitting element may include two opposing electrodes and a light emitting layer disposed between the two opposing electrodes. The light emitting layer receives electrons and holes from the two opposing electrodes and recombines the electrons and holes to generate excitons, and the generated excitons change from an excited state to a ground state, thereby emitting light.

[0005] Organic light-emitting display devices including organic light-emitting elements are attracting attention as next-generation display devices because they can meet high display quality requirements such as wide viewing angle, high brightness and contrast, and fast response speed, and because they do not require a power source such as a backlight unit and can be made with low power consumption, light weight, and thinness.

[0006] It is to be understood that the background section of the technical section is intended to provide a useful background for understanding the technology. However, the background of the technical section may also include ideas, concepts or cognitions that are not known or recognized by those skilled in the relevant art before the corresponding effective filing date of the subject matter disclosed herein. Summary of the invention

[0007] Aspects of the present disclosure provide a display device capable of reducing defects in the display device by preventing moisture penetration from the outside.

[0008] However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0009] According to one aspect of the present disclosure, a display device may include: a substrate including a display area and a non-display area; a light-emitting element layer arranged on the display area of ​​the substrate; an opposing substrate facing the substrate; a low-refractive layer arranged on the surface of the opposing substrate; a first capping layer arranged on the surface of the low-refractive layer; a second capping layer arranged on the surface of the first capping layer; a spacer layer arranged on the surface of the second capping layer; a first coupling member arranged between the substrate and the opposing substrate and coupling the substrate to the opposing substrate; and a second coupling member arranged on the side surface of the substrate and the side surface of the opposing substrate and coupling the substrate to the opposing substrate. The first coupling member may extend to the spacer layer. The first coupling member may include a first hygroscopic agent.

[0010] In an embodiment, the first coupling member may surround the display area in a plan view.

[0011] In an embodiment, the first moisture absorbent may be contained in the first coupling member in an amount of 20 to 50 weight % relative to the total weight of the first coupling member.

[0012] In an embodiment, the first coupling member may further include spacer particles.

[0013] In an embodiment, the second coupling member may be spaced apart from the first coupling member.In a plan view, the second coupling member may surround the first coupling member.

[0014] In an embodiment, the second coupling member may include a second moisture absorbent.

[0015] In an embodiment, the second moisture absorbent may be contained in the second coupling member in an amount of 20 to 50 weight % relative to the total weight of the second coupling member.

[0016] In an embodiment, the second coupling member may extend to a side surface of each of the low-refractive layer, the first capping layer, the second capping layer, and the spacer layer.

[0017] In an embodiment, at least one of the first capping layer and the second capping layer may include silicon oxynitride represented by Chemical Formula 1:

[0018] [Chemical formula 1]

[0019] Si x O y N z (30≤x≤40, 1≤y≤5 and 55≤z≤70),

[0020] Here, the unit of each of x, y and z is atomic %.

[0021] In an embodiment, the display device may further include: a color filter layer between the opposing substrate and the low refractive layer. The color filter layer may include: a first color filter arranged on the surface of the opposing substrate; a second color filter arranged on the surface of the first color filter; and a third color filter arranged on the surface of the second color filter. The second coupling member may extend to the side surface of the color filter layer.

[0022] In an embodiment, the display device may further include: a wavelength conversion layer between the first capping layer and the second capping layer. The wavelength conversion layer may include: a first light-transmitting member that completely transmits the first color light emitted from the light-emitting element layer; a second light-transmitting member that converts the first color light emitted from the light-emitting element layer into the second color light; and a third light-transmitting member that converts the first color light emitted from the light-emitting element layer into the third color light.

[0023] In an embodiment, the display device may further include: a thin film encapsulation layer disposed on the light emitting element layer. The thin film encapsulation layer may include: a lower inorganic layer overlapping the light emitting element layer; an organic layer disposed on the lower inorganic layer; and an upper inorganic layer disposed on the organic layer.

[0024] In an embodiment, the display device may further include: a filling layer between the thin film encapsulation layer and the second capping layer. The filling layer may extend to the first coupling member.

[0025] According to one aspect of the present disclosure, a display device may include: a substrate; a light-emitting element layer, which is arranged on the substrate; an opposing substrate, which faces the substrate; a low-refractive layer, which is arranged on the surface of the opposing substrate; a first capping layer, which is arranged on the surface of the low-refractive layer; a second capping layer, which is arranged on the surface of the first capping layer; a spacer layer, which is arranged on the surface of the second capping layer; a first connecting member, which is arranged between the substrate and the opposing substrate and connects the substrate to the opposing substrate; and a second connecting member, which is arranged on the side surface of the substrate and the side surface of the opposing substrate and connects the substrate to the opposing substrate. At least one of the first capping layer and the second capping layer may contain silicon oxynitride represented by Chemical Formula 1:

[0026] [Chemical formula 1]

[0027] Si x O y N z (30≤x≤40, 1≤y≤5 and 55≤z≤70),

[0028] Here, the unit of each of x, y and z is atomic %.

[0029] In an embodiment, the first coupling member may include a first moisture absorbent, and the first moisture absorbent may be included in the first coupling member in an amount of 20 to 50 weight % relative to a total weight of the first coupling member.

[0030] In an embodiment, the second coupling member may include a second moisture absorbent, and the second moisture absorbent may be included in the second coupling member in an amount of 20 to 50 weight % relative to the total weight of the second coupling member.

[0031] In an embodiment, the second coupling member may be spaced apart from the first coupling member.In a plan view, the second coupling member may surround the first coupling member.

[0032] In an embodiment, the aperture may be between the first coupling member and the second coupling member.

[0033] In an implementation, the spacer layer may include an organic material.The first coupling member may extend to the spacer layer.

[0034] In an implementation, the low-refractive layer may include an organic material.The second coupling member may extend to a side surface of the low-refractive layer.

[0035] The display device according to the embodiment may include a moisture absorbent in the first coupling member to prevent moisture penetration caused by the spacer layer and thus prevent defects such as delamination or oxidation of the thin film encapsulation layer.

[0036] In addition, the display device according to the embodiment may further include a moisture absorbent in the second coupling member to prevent moisture penetration caused by the low refractive layer and thus prevent a delamination defect in the color filter layer.

[0037] In addition, the display device according to the embodiment may prevent moisture penetration by adjusting the atomic ratio of the first capping layer covering the low refractive layer.

[0038] However, the effects according to the embodiments of the present disclosure are not limited to those mentioned above, and various other effects are incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0040] Figure 1 is a schematic plan view of a display device according to an embodiment;

[0041] Figure 2 is a schematic diagram showing wiring included in a display device according to an embodiment;

[0042] Figure 3 is a schematic diagram of an equivalent circuit of a sub-pixel according to an embodiment;

[0043] Figure 4 is a schematic cross-sectional view illustrating a display device according to an embodiment;

[0044] Figure 5 is a schematic cross-sectional view illustrating a display area of ​​a display device according to an embodiment;

[0045] Figure 6 is a schematic cross-sectional view illustrating a display device according to an embodiment;

[0046] Figure 7 is a schematic cross-sectional view illustrating a non-display region of a display device according to an embodiment;

[0047] Figure 8 is a schematic plan view showing the arrangement of a first coupling member of a display device according to an embodiment;

[0048] Fig. 9 is a schematic cross-sectional view showing a moisture permeation path in a display device;

[0049] Fig.10 is a schematic cross-sectional view of a display device according to another embodiment;

[0050] Fig.11 is a schematic cross-sectional view showing a moisture permeation path of a display device;

[0051] Fig.12 is a schematic cross-sectional view showing a display device according to still another embodiment;

[0052] Fig.13 is a schematic graph showing OH contents of a spacer layer and a first coupling member according to Experimental Example 1; and

[0053] Fig.14 is a graph showing the D in the low refractive layer and the first capping layer according to Experimental Example 2 2 Schematic graph of the D content of O. DETAILED DESCRIPTION

[0054] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings in which embodiments of the present disclosure are shown. However, the present disclosure may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art.

[0055] In the drawings, the size, thickness, ratio, and dimensions of elements may be exaggerated for convenience of description and for clarity. Like reference numerals refer to like elements throughout the specification.

[0056] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0057] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0058] The terms “comprises,” “comprising,” “contain,” “containing,” “includes,” “including,” “has,” “have,” “having,” etc., when used in the present specification, specify the presence of stated features, integers, steps, operations, elements, components and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0059] In the specification and claims, for the purpose of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in the sense of conjunctions or disjunctions and may be understood to be equivalent to "and / or".

[0060] In the specification and claims, for the purpose of its meaning and interpretation, the phrase "at least one of" is intended to include the meaning of "at least one selected from the group of..." For example, "at least one of A and B" can be understood to mean "A, B, or A and B".

[0061] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For this reason, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the "second" element. Similarly, the second element may also be referred to as the first element.

[0062] The term "overlap" or "overlapped" means that a first object may be above or below or to the side of a second object, and vice versa. Additionally, the term "overlap" may include laminating, stacking, facing or facing, extending over, covering or partially covering, or any other suitable term that will be recognized and understood by a person of ordinary skill in the art.

[0063] When an element is described as “not overlapping” or “non-overlapping” another element, this may include elements being spaced apart from each other, elements being offset from each other, or elements being separated from each other, or any other suitable terminology as one of ordinary skill in the art would recognize and understand.

[0064] The terms "facing" and "facing" mean that the first element can be directly or indirectly opposite to the second element. In the case where a third element is between the first element and the second element, although still facing each other, the first element and the second element can be understood to be indirectly opposite to each other.

[0065] As used herein, "about," "approximately," and "substantially" are inclusive of the stated value and mean within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the errors associated with the measurements and the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

[0066] The multiple features of various embodiments of the present disclosure can be combined or combined with each other in part or in whole, and various interlocks and drives in technology are possible. Each embodiment can be implemented independently of each other, or can be implemented in conjunction with each other.

[0067] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that, unless expressly defined as such herein, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and will not be interpreted in an idealized or overly formal sense.

[0068] Figure 1 is a schematic plan view of a display device according to an embodiment.

[0069] refer to Figure 1The display device 10 according to the embodiment may be applied to a smart phone, a mobile phone, a tablet personal computer, a personal digital assistant (PDA), a portable multimedia player (PMP), a television, a game console, a wristwatch type electronic device, a head mounted display, a display of a personal computer, a laptop computer, a car navigation system, a dashboard of a car, a digital camera, a video camera, an external billboard, an electronic billboard, a medical device, an inspection device, various household appliances such as a refrigerator and a washing machine, or an Internet of Things device. In this article, a television (TV) is described as an example of the display device 10, and the TV may have a high resolution or an ultra-high resolution such as HD, UHD, 4K, and 8K.

[0070] In addition, the display device 10 according to the embodiment can be classified into various types according to the display method. For example, the display device 10 can be classified into an organic light emitting display (OLED) device, an inorganic light emitting display (inorganic EL) device, a quantum dot light emitting display (QED) device, a micro LED display device, a nano LED display device, a plasma display device (PDP), a field emission display (FED) device, a cathode ray tube (CRT) display device, a liquid crystal display (LCD) device, an electrophoretic display (EPD) device, etc. In the following, an organic light emitting display device and an inorganic light emitting display device will be described as an example of the display device 10, and unless specifically distinguished, the display device 10 applied to the embodiment will be referred to as the display device 10. However, the embodiment is not limited to the organic light emitting display device or the inorganic light emitting display device, and other display devices mentioned above or in other ways can be applied.

[0071] In a plan view, the display device 10 according to the embodiment may have a square shape, for example, a rectangular shape. In the case where the display device 10 is a television, the display device 10 may be arranged so that its long side extends in the horizontal direction. However, the present disclosure is not limited thereto, and the long side of the display device 10 may extend in the vertical direction. In another embodiment, the display device 10 may be installed to be rotatable so that its long side is variably positioned to extend in the horizontal direction or the vertical direction.

[0072] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an active area in which an image is displayed. In a plan view, the display area DPA may have a rectangular shape similar to the overall shape of the display device 10, but the present disclosure is not limited thereto.

[0073] The display area DPA may include pixels PX. The pixels PX may be arranged in a matrix. In a plan view, the shape of each pixel PX may be a rectangle or a square. However, without limitation thereto, each pixel PX may have a rhombus shape in which each side thereof is inclined relative to a side direction of the display device 10. The pixels PX may include pixels PX of multiple colors. For example, the pixels PX may include pixels PX of a first color of red, pixels PX of a second color of green, and pixels PX of a third color of blue, but without limitation thereto. The pixels PX of multiple colors may be alternately arranged in a stripe arrangement or in a plurality of colors. Type layout.

[0074] The non-display area NDA may be arranged around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may have a rectangular shape, and the non-display area NDA may be arranged adjacent to four sides of the display area DPA. The non-display area NDA may form a frame of the display device 10.

[0075] In the non-display area NDA, a driving circuit or a driving element for driving the display area DPA may be arranged. Figure 1 The first non-display area NDA1 adjacent to the lower side of the display device 10 and the second long side ( Figure 1 In the second non-display area NDA2 adjacent to the display substrate of the display device 10 (the upper side in the middle), a pad portion may be provided on the display substrate of the display device 10, and an external device EXD may be mounted on a pad electrode of the pad portion. The external device EXD may include, for example, a connection film, a printed circuit board, a driver integrated circuit DIC, a connector, a wiring connection film, etc. A scan driver SDR directly formed on the display substrate of the display device 10 may be provided on the first short side ( Figure 1 However, the present disclosure is not limited thereto, and the scan driver SDR may be provided in a third non-display area NDA3 arranged to be adjacent to the second short side ( Figure 1 In the fourth non-display area NDA4 adjacent to the right side of the display.

[0076] Figure 2 is a schematic diagram illustrating wiring included in a display device according to an embodiment.

[0077] refer to Figure 2 , the display device 10 may include a plurality of wirings. The plurality of wirings may include a scan line SCL, a sensing line SSL, a data line DTL, an initialization voltage line VIL, a first voltage line VDL, a second voltage line VSL, etc. Although not shown in the drawings, other wirings may also be provided in the display device 10.

[0078] The scan lines SCL and the sensing lines SSL may extend in the first direction DR1. The scan lines SCL and the sensing lines SSL may be connected to a scan driver SDR. The scan driver SDR may include a driving circuit. The scan driver SDR may be arranged on one side of the display area DPA in the first direction DR1, but the embodiment is not limited thereto. The scan driver SDR may be connected to a signal connection line CWL, and at least one end of the signal connection line CWL may form a pad WPD_CW on a pad area PDA of the non-display area NDA to be connected to an external device EXD.

[0079] The term "connection" as used herein may mean not only that one component is connected to another component by physical contact, but also that one component is connected to another component via another component. This may also be understood as one part and another part of an integral element being connected to form an integrated element via another component. In addition, if one component is connected to another component, this may be interpreted as including the meaning of electrical connection via another component in addition to direct connection by physical contact.

[0080] The data line DTL and the initialization voltage line VIL may extend in a second direction DR2 intersecting the first direction DR1. In addition to the portion extending in the second direction DR2, the initialization voltage line VIL may also include a portion branching from it in the first direction DR1. The first voltage line VDL and the second voltage line VSL may also include a portion extending in the second direction DR2 and a portion connected thereto to extend in the first direction DR1. The first voltage line VDL and the second voltage line VSL may have a grid structure, but are not limited thereto. Although not shown in the drawings, each pixel PX of the display device 10 may be connected to at least one data line DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL.

[0081] The data line DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL may be electrically connected to at least one wiring pad WPD. Each wiring pad WPD may be arranged in a pad area PDA. In an embodiment, a wiring pad WPD_DT (hereinafter referred to as a "data pad") of the data line DTL may be arranged in a pad area PDA positioned on one side of the display area DPA in the second direction DR2. In addition, a wiring pad WPD_Vint (hereinafter referred to as an "initialization voltage pad") of the initialization voltage line VIL, a wiring pad WPD_VDD (hereinafter referred to as a "first power pad") of the first voltage line VDL, and a wiring pad WPD_VSS (hereinafter referred to as a "second power pad") of the second voltage line VSL may be arranged in a pad area PDA positioned on the other side of the display area DPA in the second direction DR2. As another example, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power pad WPD_VDD, and the second power pad WPD_VSS may all be arranged in the same area, for example, in the non-display area NDA positioned above the display area DPA. The external device EXD may be mounted on the wiring pad WPD. The external device EXD may be mounted on the wiring pad WPD by applying an anisotropic conductive film, ultrasonic bonding, etc.

[0082] Each pixel PX or sub-pixel of the display device 10 may include a pixel driving circuit. The above-mentioned wiring may pass through each pixel PX or the vicinity of each pixel PX to apply a driving signal to each pixel driving circuit. The pixel driving circuit may include a transistor and a capacitor. The number of transistors and the number of capacitors of each pixel driving circuit may be variously modified. According to an embodiment, in each sub-pixel of the display device 10, the pixel driving circuit may have a 3T1C structure including three transistors and one capacitor. Hereinafter, a pixel driving circuit of a 3T1C structure will be described as an example, but the present disclosure is not limited thereto, and various other modified pixel PX structures such as a 2T1C structure, a 7T1C structure, and a 6T1C structure may be applied.

[0083] Figure 3 is a schematic diagram of an equivalent circuit of a sub-pixel according to an embodiment.

[0084] refer to Figure 3 Each sub-pixel SPX of the display device 10 according to the embodiment may further include a driving transistor DTR, a first transistor STR1, a second transistor STR2, and a storage capacitor CST in addition to the light emitting element ED.

[0085] The light emitting element ED may emit light according to current supplied through the driving transistor DTR. The light emitting element ED may be implemented as an inorganic light emitting diode, an organic light emitting diode, a micro light emitting diode, or a nano light emitting diode.

[0086] The first electrode (i.e., the anode electrode) of the light emitting element ED can be connected to the source electrode of the driving transistor DTR, and the second electrode (i.e., the cathode electrode) of the light emitting element ED can be connected to the second power line ELVSL to which a low potential voltage (second source voltage) lower than a high potential voltage (first source voltage) of the first power line ELVDL is supplied.

[0087] The driving transistor DTR may adjust a current flowing from the first power line ELVDL to which the first source voltage is applied to the light emitting element ED according to a voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor DTR may be connected to the first electrode of the first transistor STR1, the source electrode of the driving transistor DTR may be connected to the first electrode of the light emitting element ED, and the drain electrode of the driving transistor DTR may be connected to the first power line ELVDL to which the first source voltage is applied.

[0088] The first transistor STR1 may be turned on by a scan signal of the scan line SCL to connect the data line DTL to the gate electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 may be connected to the scan line SCL, the first electrode of the first transistor STR1 may be connected to the gate electrode of the driving transistor DTR, and the second electrode of the first transistor STR1 may be connected to the data line DTL.

[0089] The second transistor STR2 may be turned on by a sensing signal of the sensing line SSL to connect the initialization voltage line VIL to the source electrode of the driving transistor DTR. A gate electrode of the second transistor STR2 may be connected to the sensing line SSL, a first electrode of the second transistor STR2 may be connected to the initialization voltage line VIL, and a second electrode of the second transistor STR2 may be connected to the source electrode of the driving transistor DTR.

[0090] In an embodiment, a first electrode of each of the first and second transistors STR1 and STR2 may be a source electrode, and a second electrode of each of the first and second transistors STR1 and STR2 may be a drain electrode, but the present disclosure is not limited thereto and may be vice versa.

[0091] The storage capacitor CST may be formed between the gate electrode and the source electrode of the driving transistor DTR. The storage capacitor CST may store a difference voltage between the gate voltage and the source voltage of the driving transistor DTR.

[0092] The driving transistor DTR, the first transistor STR1 and the second transistor STR2 may be formed as thin film transistors. Figure 3 In the description of the present invention, it is assumed that the driving transistor DTR, the first transistor STR1, and the second transistor STR2 are N-type metal oxide semiconductor field effect transistors (MOSFETs), but the present disclosure is not limited thereto. For example, the driving transistor DTR, the first transistor STR1, and the second transistor STR2 may be P-type MOSFETs, or some of the driving transistor DTR, the first transistor STR1, and the second transistor STR2 may be N-type MOSFETs, while the others may be P-type MOSFETs.

[0093] Figure 4 is a schematic cross-sectional view illustrating a display device according to an embodiment. Figure 5 is a schematic cross-sectional view illustrating a display region of a display device according to an embodiment.

[0094] refer to Figure 4 and Figure 5 The display device 10 according to the embodiment may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a filling layer FIL, a wavelength conversion layer WCL, a color filter layer CFL, a counter substrate TSUB, a first coupling member SEL1, and a second coupling member SEL2.

[0095] The substrate SUB may be an insulating substrate. The substrate SUB may include a transparent material. For example, the substrate SUB may include a transparent insulating material such as glass, quartz, etc. The substrate SUB may be a rigid substrate. In addition, the substrate SUB is not limited thereto. The substrate SUB may include a plastic such as polyimide, etc., and may have a flexible property so that the substrate SUB can be twisted, bent, folded, or curled.

[0096] The light emitting element layer EML may be disposed on the substrate SUB. The light emitting element layer EML may include a switching element and a light emitting element ED disposed in each sub-pixel SPX. The switching element may drive the light emitting element ED so that the light emitting element ED may emit light.

[0097] The thin film encapsulation layer TFEL may be disposed on the light emitting element layer EML. The thin film encapsulation layer TFEL may include an organic layer disposed between a plurality of inorganic layers, and may protect the light emitting element layer EML from external moisture and oxygen.

[0098] The counter substrate TSUB may be arranged to face the substrate SUB. The counter substrate TSUB may encapsulate the light emitting element layer EML together with the substrate SUB. The counter substrate TSUB may include a transparent material. For example, the counter substrate TSUB may include a transparent insulating material such as glass, quartz, or the like.

[0099] The color filter layer CFL may be disposed on one surface of the counter substrate TSUB. The color filter layer CFL may filter light incident from the outside to reduce reflection of the external light and improve color characteristics of light emitted through the wavelength conversion layer WCL.

[0100] The wavelength conversion layer WCL may be disposed on one surface of the color filter layer CFL. The wavelength conversion layer WCL may convert the wavelength of light emitted from the light emitting element layer EML to emit red light, green light, and blue light.

[0101] The filling layer FIL may be disposed between the substrate SUB and the counter substrate TSUB. The filling layer FIL may be filled between the substrate SUB and the counter substrate TSUB to protect the display area DPA of the display device 10.

[0102] The substrate SUB and the counter substrate TSUB may be coupled to each other by a first coupling member SEL1. The first coupling member SEL1 may encapsulate the light emitting element layer EML by coupling the substrate SUB and the counter substrate TSUB to each other. The first coupling member SEL1 may be arranged in the non-display area NDA to surround the display area DPA of the display device 10.

[0103] The second coupling member SEL2 may be disposed on the side surface of the substrate SUB and the side surface of the counter substrate TSUB. The second coupling member SEL2 may seal the side surface of the display device 10 to prevent moisture penetration.

[0104] At least one of the first coupling member SEL1 and the second coupling member SEL2 may include a hygroscopic material such as a metal oxide. The hygroscopic material may be a material that absorbs moisture and may prevent defects in the display device 10 by absorbing moisture that penetrates from the outside.

[0105] Hereinafter, the configuration of the display device 10 according to the embodiment will be described in detail with reference to other drawings.

[0106] Figure 6 is a schematic cross-sectional view illustrating a display device according to an embodiment. Figure 6 A part of the display area DPA of the display device 10 is shown.

[0107] Combination Figure 5 refer to Figure 6 The light emitting element layer EML may be disposed on the substrate SUB. The light emitting element layer EML may include a buffer layer 120, a lower metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate electrode GE, a gate insulating layer 140, a second insulating layer 150, a source electrode SE, a drain electrode DE, a third insulating layer 155, a fourth insulating layer 160, a light emitting element ED, and a pixel defining layer 170.

[0108] The buffer layer 120 may be disposed on the substrate SUB. The buffer layer 120 may be used to block foreign matter or moisture from penetrating through the substrate SUB to the elements disposed on the buffer layer 120.

[0109] The buffer layer 120 may include SiO 2 、SiN x or an inorganic material of SiON, and may be formed in a single-layer structure or a multi-layer structure, but the embodiment is not limited thereto.

[0110] The lower metal layer BML may be disposed on the buffer layer 120. The lower metal layer BML may block external light or light emitted from the light emitting element ED to be described later from being introduced into the semiconductor layer ACT. Therefore, the occurrence of leakage current due to light in the thin film transistor to be described later may be prevented or reduced.

[0111] The lower metal layer BML may be made of a material that blocks light and has conductivity. In some embodiments, the lower metal layer BML may include a single material of a metal such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), or neodymium (Nd), or an alloy thereof. In some embodiments, the lower metal layer BML may have a single-layer structure or a multi-layer structure. For example, in the case where the lower metal layer BML has a multi-layer structure, the lower metal layer BML may have a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al 2 O 3 ) stacking structure, but the implementation method is not limited to this.

[0112] In some embodiments, a plurality of lower metal layers BML may be provided to respectively correspond to the semiconductor layer ACT and may overlap the semiconductor layer ACT. In some embodiments, a width of the lower metal layer BML may be greater than a width of the semiconductor layer ACT.

[0113] In some embodiments, the lower metal layer BML may be a data line, a power line, a thin film transistor (not shown in the drawings) and a thin film transistor ( Figure 6 The lower metal layer BML may be a portion of a wiring or the like that electrically connects the gate electrode GE, the semiconductor layer ACT, the drain electrode DE, and the source electrode SE in the semiconductor layer. In some embodiments, the lower metal layer BML may be made of a material having a lower resistance than the source electrode SE and the drain electrode DE.

[0114] The first insulating layer 130 may be disposed on the lower metal layer BML. The first insulating layer 130 may serve to electrically insulate the lower metal layer BML from the semiconductor layer ACT. The first insulating layer 130 may cover the lower metal layer BML.

[0115] The first insulating layer 130 may include SiO 2 、SiN x 、SiON、Al 2 O 3 、TiO 2 、 2 O、HfO 2 or ZrO 2 of inorganic materials, but the embodiment is not limited thereto.

[0116] The semiconductor layer ACT may be disposed on the first insulating layer 130. The semiconductor layer ACT may be disposed in the display area DPA to correspond to each of the first emission area ELA1, the second emission area ELA2, and the third emission area ELA3. In addition, the semiconductor layer ACT may be disposed to overlap the lower metal layer BML, thereby suppressing the generation of photocurrent in the semiconductor layer ACT.

[0117] The semiconductor layer ACT may include an oxide semiconductor. In some embodiments, the semiconductor layer ACT may be formed of a Zn oxide-based material (e.g., Zn oxide, In-Zn oxide, or Ga-In-Zn oxide), and may be an In-Ga-Zn-O (IGZO) semiconductor containing a metal such as indium (In) or gallium (Ga), but embodiments are not limited thereto. For example, the semiconductor layer ACT may include amorphous silicon or polycrystalline silicon.

[0118] The gate electrode GE may be disposed on the semiconductor layer ACT. The gate electrode GE may be disposed in the display area DPA to overlap the semiconductor layer ACT. In some embodiments, the width of the gate electrode GE may be narrower than the width of the semiconductor layer ACT, but the embodiments are not limited thereto.

[0119] Considering the adhesion with adjacent layers, the surface flatness of the stacked layers, the processability, etc., the gate electrode GE may include one or more materials of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and copper (Cu), and may be formed into a single-layer structure or a multi-layer structure, but the embodiment is not limited thereto.

[0120] The gate insulating layer 140 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may insulate the semiconductor layer ACT from the gate electrode GE. In some embodiments, the gate insulating layer 140 may not be composed of a single layer disposed on one side of the substrate SUB in the third direction DR3, but may be composed of a partially patterned shape, and the width of the gate insulating layer 140 may be narrower than the width of the semiconductor layer ACT and wider than the width of the gate electrode GE, but the embodiment is not limited thereto.

[0121] The gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include the inorganic material discussed in the description of the first insulating layer 130 .

[0122] The second insulating layer 150 may be disposed on the gate insulating layer 140 to cover the semiconductor layer ACT and the gate electrode GE. In some embodiments, the second insulating layer 150 may serve as a planarization layer providing a planar surface.

[0123] The second insulating layer 150 may include an organic material. In some embodiments, the second insulating layer 150 may include at least one of photo acrylic (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, polyparaxylene, fluorine-based polymer, epoxy resin, benzocyclobutene-based resin, siloxane-based resin, and silane resin, but the present disclosure is not limited thereto.

[0124] In some embodiments, the second insulating layer 150 may include an inorganic material. For example, the second insulating layer 150 may include the inorganic material discussed in the description of the first insulating layer 130.

[0125] The source electrode SE and the drain electrode DE may be spaced apart from each other and disposed on the second insulating layer 150. The source electrode SE and the drain electrode DE may be connected to the semiconductor layer ACT through contact holes penetrating the second insulating layer 150, respectively. The source electrode SE may penetrate the first insulating layer 130 and the second insulating layer 150 and may be connected to the lower metal layer BML. In the case where the lower metal layer BML is a part of a wiring that transmits a signal, a voltage, etc., the source electrode SE may be connected and electrically coupled to the lower metal layer BML to receive a transmission voltage, etc., provided to the wiring. In another embodiment, in the case where the lower metal layer BML is a floating pattern rather than a separate wiring, the voltage, etc. provided to the source electrode SE may be transmitted to the lower metal layer BML, etc.

[0126] The source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed into a multilayer structure or a single layer structure. In some embodiments, the source electrode SE and the drain electrode DE may have a multilayer structure of Ti / Al / Ti, but are not limited thereto.

[0127] The semiconductor layer ACT, the gate electrode GE, the source electrode SE, and the drain electrode DE described above may form a thin film transistor as a switching element. In some embodiments, the thin film transistor may be positioned in each of the first emission area ELA1, the second emission area ELA2, and the third emission area ELA3. In some embodiments, a portion of the thin film transistor may be positioned in the non-emission area NELA.

[0128] The third insulating layer 155 may be disposed on the second insulating layer 150 to cover the thin film transistor. In some embodiments, the third insulating layer 155 may be a passivation layer.

[0129] In some embodiments, the third insulating layer 155 may include an inorganic material. For example, the third insulating layer 155 may include the inorganic material discussed in the description of the first insulating layer 130 .

[0130] The fourth insulating layer 160 may be disposed on the third insulating layer 155 and cover the third insulating layer 155. In some embodiments, the fourth insulating layer 160 may be a planarization layer.

[0131] The fourth insulating layer 160 may be made of an organic material. In some embodiments, the fourth insulating layer 160 may include acrylic resin, epoxy resin, imide resin, ester resin, etc., or may include a photosensitive organic material, but the embodiment is not limited thereto.

[0132] The anode electrode ANO may be disposed on the fourth insulating layer 160 in the display area DPA.

[0133] The anode electrode ANO may overlap the first, second, and third emission areas ELA1, ELA2, and ELA3, respectively, and may at least partially extend to the non-emission area NELA. The anode electrode ANO may be connected to the drain electrode DE of the thin film transistor.

[0134] In some embodiments, the anode electrode ANO may be a reflective electrode, in which case the anode electrode ANO may be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr. In another embodiment, the anode electrode ANO may further include a metal oxide layer stacked on the metal layer. In an embodiment, the anode electrode ANO may have a multilayer structure, for example, ITO / Ag, Ag / ITO, ITO / Mg, and ITO / MgF 2 A two-layer structure or a three-layer structure of ITO / Ag / ITO.

[0135] The pixel defining layer 170 may be disposed on the anode electrode ANO. The pixel defining layer 170 may define the first emission area ELA1, the second emission area ELA2, and the third emission area ELA3 as openings exposing the anode electrode ANO, respectively.

[0136] The pixel defining layer 170 may overlap a light blocking area BA of a color filter layer CFL to be described later in the third direction DR3. In addition, the pixel defining layer 170 may overlap a dam BK to be described later in the third direction DR3.

[0137] The pixel defining layer 170 may include an organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, and benzocyclobutene (BCB), but the embodiment is not limited thereto.

[0138] The light emitting layer OL may be disposed on the anode electrode ANO. In some embodiments, the light emitting layer OL may have a shape of a continuous film formed throughout the emission area and the non-emission area NELA. In some embodiments, the light emitting layer OL may be positioned only in the display area DPA, but the embodiment is not limited thereto. For example, a portion of the light emitting layer OL may also be disposed in the non-display area NDA.

[0139] In some embodiments, the light emitting layer OL may include an organic layer including an organic material. The organic layer may include an organic light emitting layer, and in some cases, the organic layer may further include a hole injection / transport layer and / or an electron injection / transport layer as auxiliary layers for assisting light emission.

[0140] In some embodiments, when the display device 10 is a micro LED display, a nano LED display, etc., the light emitting layer OL may include an inorganic material such as an inorganic semiconductor.

[0141] The cathode electrode CE may be disposed on the light emitting layer OL. In some embodiments, the cathode electrode CE may be disposed on the light emitting layer OL to have a continuous film shape formed throughout the first emission area ELA1, the second emission area ELA2, and the third emission area ELA3 and the non-emission area NELA. In other words, the cathode electrode CE may completely cover the light emitting layer OL.

[0142] The cathode electrode CE may have semi-transmissive or transmissive properties. In the case where the cathode electrode CE has a thickness of tens to hundreds of angstroms, the cathode electrode CE may have semi-transmissive properties. In some embodiments, in the case where the cathode electrode CE has semi-transmissive properties, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti or a compound or mixture thereof, such as a mixture of Ag and Mg. The cathode electrode CE may include a transparent conductive oxide to have transmissive properties. In some embodiments, in the case where the cathode electrode CE has transmissive properties, the cathode electrode CE may include tungsten oxide (W x O x ), titanium oxide (TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0143] The anode electrode ANO, the light emitting layer OL, and the cathode electrode CE may form a light emitting element ED. For example, the anode electrode ANO, the light emitting layer OL, and the cathode electrode CE overlapping the first emission area ELA1 may form a first light emitting element, the anode electrode ANO, the light emitting layer OL, and the cathode electrode CE overlapping the second emission area ELA2 may form a second light emitting element, and the anode electrode ANO, the light emitting layer OL, and the cathode electrode CE overlapping the third emission area ELA3 may form a third light emitting element. Each of the first light emitting element, the second light emitting element, and the third light emitting element may emit emission light. The emission light emitted from each light emitting element ED may have a peak wavelength of 440 nm to 480 nm. That is, the emission light may be blue light.

[0144] The thin film encapsulation layer TFEL may be arranged on the light emitting element layer EML. The thin film encapsulation layer TFEL may be arranged on the cathode electrode CE. The thin film encapsulation layer TFEL may be used to protect the components positioned thereunder from external foreign matter such as moisture. The thin film encapsulation layer TFEL may be commonly arranged in the first emission area ELA1, the second emission area ELA2, the third emission area ELA3, and the non-emission area NELA.

[0145] The thin film encapsulation layer TFEL may include a lower inorganic layer TFE1 , an organic layer TFE2 , and an upper inorganic layer TFE3 , which are sequentially stacked on one another.

[0146] The lower inorganic layer TFE1 may completely cover the cathode electrode CE in the display area DPA to cover the first light emitting element, the second light emitting element, and the third light emitting element. The organic layer TFE2 may be arranged on the lower inorganic layer TFE1 to cover the first light emitting element, the second light emitting element, and the third light emitting element. The upper inorganic layer TFE3 may be arranged on the organic layer TFE2 to completely cover the organic layer TFE2.

[0147] In some embodiments, each of the lower inorganic layer TFE1 and the upper inorganic layer TFE3 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, etc., but the embodiments are not limited thereto.

[0148] In some embodiments, the organic layer TFE2 may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, etc., but the embodiment is not limited thereto.

[0149] The counter substrate TSUB may be arranged above the substrate SUB on which the light emitting element layer EML and the thin film encapsulation layer TFEL are arranged. The color filter layer CFL and the wavelength conversion layer WCL arranged on one surface of the color filter layer CFL may be arranged on one surface of the counter substrate TSUB. In addition, the display device 10 may include a low refractive layer LR and a first capping layer CPL1 arranged between the color filter layer CFL and the wavelength conversion layer WCL, and a spacer layer SPC arranged on one surface of the wavelength conversion layer WCL.

[0150] The color filter layer CFL may be arranged on the other side of the counter substrate TSUB in the third direction DR3, that is, between the counter substrate TSUB and the substrate SUB. The color filter layer CFL may include a filter pattern area and a light blocking pattern portion BM. The light blocking pattern portion BM may surround the filter pattern area. The filter pattern area of ​​the color filter layer CFL may define a light-transmitting area, and the light blocking pattern portion BM may define a light blocking area BA.

[0151] like Figure 6 , the color filter layer CFL may include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 may absorb both the second light L2 and the third light L3 except the first light L1, the second color filter 322 may absorb both the first light L1 and the third light L3 except the second light L2, and the third color filter 323 may absorb both the first light L1 and the second light L2 except the third light L3. In other words, the first color filter 321 may transmit the first light L1, the second color filter 322 may transmit the second light L2, and the third color filter 323 may transmit the third light L3.

[0152] In some embodiments, the first color filter 321 may be a blue color filter and may include a blue colorant. In the present disclosure, a colorant is a concept including both a dye and a pigment. The first color filter 321 may include a base resin, and the blue colorant may be dispersed in the base resin. In some embodiments, the second color filter 322 may be a green color filter and may include a green colorant. The second color filter 322 may include a base resin, and the green colorant may be dispersed in the base resin. In some embodiments, the third color filter 323 may be a red color filter and may include a red colorant. The third color filter 323 may include a base resin, and the red colorant may be dispersed in the base resin.

[0153] The first color filter 321 may include a first filter pattern area 321a and a first blocking pattern area 321b surrounding the first filter pattern area 321a, the second color filter 322 may include a second filter pattern area 322a and a second blocking pattern area 322b surrounding the second filter pattern area 322a, and the third color filter 323 may include a third filter pattern area 323a and a third blocking pattern area 323b surrounding the third filter pattern area 323a.

[0154] Specifically, the first filter pattern area 321a of the first color filter 321 may overlap the first transmission area TA1, and the first blocking pattern area 321b of the first color filter 321 may surround the first filter pattern area 321a overlapping the first transmission area TA1, but may not overlap the second transmission area TA2 and the third transmission area TA3, and may overlap the light-blocking area BA. The second filter pattern area 322a of the second color filter 322 may overlap the second transmission area TA2, and the second blocking pattern area 322b of the second color filter 322 may surround the second filter pattern area 322a overlapping the second transmission area TA2, but may not overlap the first transmission area TA1 and the third transmission area TA3, and may overlap the light-blocking area BA. The third filter pattern area 323a of the third color filter 323 may overlap with the third transmission area TA3, and the third blocking pattern area 323b of the third color filter 323 may surround the third filter pattern area 323a overlapping with the third transmission area TA3, but may not overlap with the first transmission area TA1 and the second transmission area TA2, and may overlap with the light blocking area BA. In other words, the filter pattern area of ​​the color filter layer CFL may include the first filter pattern area 321a of the first color filter 321, the second filter pattern area 322a of the second color filter 322, and the third filter pattern area 323a of the third color filter 323, and the light blocking pattern portion BM may have a structure in which the first blocking pattern area 321b of the first color filter 321, the second blocking pattern area 322b of the second color filter 322, and the third blocking pattern area 323b of the third color filter 323 are stacked on each other.

[0155] The first filter pattern area 321a of the first color filter 321 may be used as a blocking filter for blocking red light and green light. Specifically, the first filter pattern area 321a may selectively transmit the first light L1 (e.g., blue light) and block or absorb the second light L2 (e.g., green light) and the third light L3 (e.g., red light).

[0156] The second filter pattern area 322a of the second color filter 322 can be used as a blocking filter for blocking blue light and red light. Specifically, the second filter pattern area 322a can selectively transmit the second light L2 (e.g., green light) and block or absorb the first light L1 (e.g., blue light) and the third light L3 (e.g., red light).

[0157] The third filter pattern area 323a of the third color filter 323 may be used as a blocking filter for blocking blue light and green light. Specifically, the third filter pattern area 323a may selectively transmit the third light L3 (e.g., red light) and block or absorb the first light L1 (e.g., blue light) and the second light L2 (e.g., green light).

[0158] In some embodiments, the light-blocking pattern portion BM has a structure in which the first blocking pattern region 321b, the third blocking pattern region 323b, and the second blocking pattern region 322b are sequentially stacked on each other in the third direction DR3, but the present disclosure is not limited thereto. For example, the light-blocking pattern portion BM may not be composed of the above-mentioned first color filter 321, the second color filter 322, and the third color filter 323 (specifically the first blocking pattern region 321b, the second blocking pattern region 322b, and the third blocking pattern region 323b), but may be formed as a separate organic light-blocking material by a coating and exposure process of an organic light-blocking material, etc. Hereinafter, for the sake of simplicity of description, the description will focus on the fact that the light-blocking pattern portion BM has a structure in which the first blocking pattern region 321b, the third blocking pattern region 323b, and the second blocking pattern region 322b are sequentially stacked on each other in the third direction DR3. The light-blocking pattern portion BM can absorb all of the first light L1, the second light L2, and the third light L3 through the above-mentioned configuration.

[0159] The low refractive layer LR may be disposed on one side of the color filter layer CFL, for example, on the other side of the color filter layer CFL in the third direction DR3. Since the low refractive layer LR has a refractive index lower than that of the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 to be described later, the low refractive layer LR may recycle light by causing total reflection of light traveling from the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 to the low refractive layer LR.

[0160] The low refractive layer LR may include an organic material. In some embodiments, the refractive index of the low refractive layer LR may be 1.3 or less. When the refractive index of the low refractive layer LR is 1.3 or less, the refractive index of the low refractive layer LR may be significantly different from the refractive indexes of the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2, so that total reflection of light may occur sufficiently.

[0161] In addition, the low refractive layer LR may be used to compensate and flatten the stepped portion generated by the first, second, and third blocking pattern regions 321b, 322b, and 323b of the color filter layer CFL. Therefore, the first capping layer CPL1 disposed on the low refractive layer LR may be formed flat.

[0162] The first capping layer CPL1 may be disposed on one surface of the low refractive layer LR to cover the low refractive layer LR. The first capping layer CPL1 may prevent impurities such as moisture or air from the outside from penetrating into the low refractive layer LR or the color filter layer CFL and damaging or contaminating the low refractive layer LR and the filter pattern region and the light blocking pattern portion BM of the color filter layer CFL.

[0163] The first capping layer CPL1 may include an inorganic material. In some embodiments, the first capping layer CPL1 may include an inorganic material such as SiO 2 、SiN x or an inorganic material of SiON, and may be formed into a single-layer structure or a multi-layer structure, but the embodiment is not limited thereto.

[0164] The wavelength conversion layer WCL may be disposed on one surface of the first capping layer CPL1. The wavelength conversion layer WCL may include a dam BK, a first light-transmitting member TPL, a second light-transmitting member WCL1, a third light-transmitting member WCL2, and a second capping layer CPL2.

[0165] refer to Figure 6 , a plurality of dams BK may be arranged on the other side of the first capping layer CPL1 in the third direction DR3 while being spaced apart from each other in the second direction DR2 to form a space for accommodating a light-transmitting member. In other words, the dam BK may be used to separate the space in which the light-transmitting member is arranged. The dam BK may be in direct contact with the other side surface of the first capping layer CPL1 in the third direction DR3. In a plan view, the dam BK may surround the light-transmitting member. The dam BK may be arranged to overlap with the non-emission area NELA and the light-blocking area BA. The dam BK may not overlap with the first emission area ELA1, the second emission area ELA2, and the third emission area ELA3, and the first transmission area TA1, the second transmission area TA2, and the third transmission area TA3.

[0166] In some embodiments, the bank BK may include an organic material having a photocurability or an organic material having a photocurability and including a light blocking material, but embodiments are not limited thereto.

[0167] The first light-transmitting member TPL may overlap the first transmission area TA1. The second light-transmitting member WCL1 may overlap the second transmission area TA2. The third light-transmitting member WCL2 may overlap the third transmission area TA3. The first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 may be referred to as a wavelength conversion layer WCL or a wavelength conversion material layer.

[0168] The first light-transmitting member TPL may be disposed in a space partitioned by the dam BK, and may overlap the first emission area ELA1 and the first transmission area TA1 in the third direction DR3. The first light-transmitting member TPL may directly contact the first capping layer CPL1 and the dam BK.

[0169] The first light-transmitting member TPL may be a light-transmitting pattern that transmits incident light. The first light-transmitting member TPL may completely transmit the light of the first color emitted from the light-emitting element layer EML. Specifically, as described above, the emission light provided from the first light-emitting element may be blue light and may pass through the first light-transmitting member TPL and the first filter pattern area 321a of the first color filter 321 to be emitted to the outside of the display device 10. In other words, the first light L1 that passes through the first transmission area TA1 and is emitted to the outside in the first emission area ELA1 may be blue light.

[0170] The first light-transmitting member TPL may include a base resin 330 and a light scatterer 331 .

[0171] The base resin 330 may be made of an organic material having high light transmittance. In some embodiments, the base resin 330 may include an organic material such as epoxy resin, acrylic resin, cardo resin, or imide resin, but the embodiment is not limited thereto.

[0172] The light scatterer 331 may have a refractive index different from that of the base resin 330 and form an optical interface with the base resin 330. The light scatterer 331 may be light scattering particles. The light scatterer 331 may scatter light in random directions regardless of the incident direction of the incident light without substantially converting the wavelength of the light passing through the first transmission area TA1.

[0173] The light scatterer 331 may be a material that scatters at least a portion of the transmitted light, and may include metal oxide particles or organic particles. In some embodiments, the light scatterer 331 may include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 )、ZnO、SnO 2) or the like as the metal oxide, and may include acrylic resin, urethane-based resin, or the like as the organic particles, but the embodiment is not limited thereto.

[0174] The second light-transmitting member WCL1 may be disposed in a space partitioned by the dam BK, and may overlap the second emission area ELA2 and the second transmission area TA2 in the third direction DR3. The second light-transmitting member WCL1 may directly contact the first capping layer CPL1 and the dam BK.

[0175] The second light-transmitting member WCL1 may be a wavelength conversion pattern that converts or shifts the peak wavelength of incident light to another specific peak wavelength to emit light having another specific peak wavelength. The second light-transmitting member WCL1 may convert the light of the first color emitted from the light-emitting element layer EML into light of the second color and emit the light. Specifically, as described above, the emission light provided from the second light-emitting element may pass through the second light-transmitting member WCL1 and the second filter pattern area 322a of the second color filter 322 as blue light, be converted into green light having a peak wavelength in the range of 510nm to about 550nm, and be emitted to the outside of the display device 10. In other words, the second light L2 that passes through the second transmission area TA2 and is emitted to the outside in the second emission area ELA2 may be green light.

[0176] The second light-transmitting member WCL1 may include a base resin 330 , light scatterers 331 dispersedly disposed in the base resin 330 , and first wavelength shifters 332 dispersedly disposed in the base resin 330 .

[0177] The first wavelength shifter 332 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. The first wavelength shifter 332 may convert the emission light, which is the blue light provided by the second light emitting element, into green light having a single peak wavelength in the range of about 510 nm to about 550 nm and emit the green light.

[0178] In some embodiments, the first wavelength shifter 332 may be a quantum dot, a quantum rod, or a fluorescent substance, but the embodiments are not limited thereto. In the following, for the sake of simplicity of description, the first wavelength shifter 332 will be mainly described as a quantum dot. A quantum dot may be a particle material that emits light of a specific color when an electron transitions from a conduction band to a valence band. A quantum dot may be a semiconductor nanocrystal material. A quantum dot may have a specific band gap depending on its composition and size. Therefore, a quantum dot may absorb light and emit light with an inherent wavelength. Examples of semiconductor nanocrystals of quantum dots may include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, combinations thereof, and the like.

[0179] The II-VI compound may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, and the ternary compound is selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgST e, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and the quaternary compound is selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0180] The III-V compounds may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof, the ternary compound is selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof, and the quaternary compound is selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0181] The IV-VI compound may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof, the ternary compound is selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof, and the quaternary compound is selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0182] In this case, the binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle divided into a state in which the concentration distribution is partially different. In addition, the particle may have a core-shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0183] In some embodiments, the quantum dot may have a core-shell structure including a core containing the above-mentioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single-layer structure or a multi-layer structure. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, and combinations thereof.

[0184] For example, the metal or non-metal oxide may be SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and NiO, or binary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2O 4 and CoMn 2 O 4 The present disclosure may include, but is not limited to, a ternary compound.

[0185] In addition, the semiconductor compound may be, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present disclosure is not limited thereto.

[0186] The light emitted from the first wavelength shifter 332 may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the purity and reproducibility of the color displayed by the display device 10 can be further improved. In addition, the light emitted from the first wavelength shifter 332 may be emitted in various directions regardless of the incident direction of the incident light. Therefore, the side visibility of the second color displayed in the second transmission area TA2 can be improved.

[0187] Some of the emission light provided from the second light emitting element may pass through the second light-transmitting member WCL1 and be emitted without being converted into green light by the first wavelength shifter 332. Among the emission light, a component whose wavelength is not converted by the second light-transmitting member WCL1 and incident on the second filter pattern area 322a of the second color filter 322 may be blocked by the second filter pattern area 322a. On the other hand, among the emission light, the green light converted by the second light-transmitting member WCL1 passes through the second filter pattern area 322a and is emitted to the outside. That is, the second light L2 emitted to the outside of the display device 10 through the second transmission area TA2 may be green light.

[0188] The third light-transmitting member WCL2 may be disposed in the space partitioned by the dam BK, and may overlap the third emission area ELA3 and the third transmission area TA3 in the third direction DR3. The third light-transmitting member WCL2 may directly contact the first capping layer CPL1 and the dam BK.

[0189] The third light-transmitting member WCL2 may be a wavelength conversion pattern that converts or shifts the peak wavelength of incident light to another specific peak wavelength to emit light having another specific peak wavelength. Specifically, as described above, the emission light provided from the third light-emitting element may pass through the third light-transmitting member WCL2 and the third filter pattern region 323a of the third color filter 323 as blue light, be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm, and be emitted to the outside of the display device 10. In other words, the third light L3 that passes through the third transmission area TA3 and is emitted to the outside in the third emission area ELA3 may be red light.

[0190] The third light-transmitting member WCL2 may include a base resin 330 , light scatterers 331 dispersedly disposed in the base resin 330 , and second wavelength shifters 333 dispersedly disposed in the base resin 330 .

[0191] The second wavelength shifter 333 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. The second wavelength shifter 333 may convert the emission light, which is the blue light provided by the third light emitting element, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm and emit the red light. In some embodiments, the second wavelength shifter 333 may be a quantum dot, a quantum rod, or a fluorescent substance, but the embodiment is not limited thereto. The case where the second wavelength shifter 333 is a quantum dot has substantially the same configuration as the case where the first wavelength shifter 332 is a quantum dot as described above, and therefore its description will be omitted.

[0192] Some of the emission light provided from the third light emitting element may pass through the second light-transmitting member WCL1 and be emitted without being converted into red light by the second wavelength shifter 333. Among the emission light, a component whose wavelength is not converted by the third light-transmitting member WCL2 and incident on the third filter pattern area 323a of the third color filter 323 may be blocked by the third filter pattern area 323a. On the other hand, red light converted by the third light-transmitting member WCL2 among the emission light passes through the third filter pattern area 323a and is emitted to the outside. That is, the third light L3 emitted to the outside of the display device 10 through the third transmission area TA3 may be red light.

[0193] The second capping layer CPL2 may be disposed on the dam BK, the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2, and serves to prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2. The second capping layer CPL2 may cover the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2.

[0194] The spacer layer SPC may be arranged on one surface of the second capping layer CPL2. The spacer layer SPC may maintain a cell gap between the substrate SUB and the counter substrate TSUB. In a plan view, the spacer layer SPC may surround the light-transmitting member. The spacer layer SPC may be arranged to overlap with the non-emission area NELA and the light-blocking area BA. The spacer layer SPC may not overlap with the first emission area ELA1, the second emission area ELA2, and the third emission area ELA3 and the first transmission area TA1, the second transmission area TA2, and the third transmission area TA3.

[0195] In some embodiments, the spacer layer SPC may include a transparent organic material having photocurability or an organic material having photocurability and including a light-blocking material, but the embodiment is not limited thereto. In some embodiments, the spacer layer SPC may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, etc., but the embodiment is not limited thereto.

[0196] The filling layer FIL may be arranged between the counter substrate TSUB and the substrate SUB. The filling layer FIL may be between the wavelength conversion layer WCL and the thin film encapsulation layer TFEL to fill the space between the wavelength conversion layer WCL and the thin film encapsulation layer TFEL. Specifically, in some embodiments, the filling layer FIL may be in direct contact with the upper inorganic layer TFE3 of the thin film encapsulation layer TFEL and the second capping layer CPL2 of the wavelength conversion layer WCL, but the present disclosure is not limited thereto.

[0197] In some embodiments, the filling layer FIL may be made of a material having an extinction coefficient that is substantially zero. There is a correlation between the refractive index and the extinction coefficient, and as the refractive index decreases, the extinction coefficient also decreases. In addition, in the case where the refractive index is 1.7 or less, the extinction coefficient may substantially converge to zero. In some embodiments, the filling layer FIL may be made of a material having a refractive index of 1.7 or less, thereby preventing or minimizing the light provided from the light emitting element ED from being absorbed while passing through the filling layer FIL. In some embodiments, the filling layer FIL may be made of an organic material having a refractive index of 1.4 to 1.6.

[0198] Figure 7 is a schematic cross-sectional view illustrating a non-display region of a display device according to an embodiment. Figure 8 is a schematic plan view showing the arrangement of a first coupling member of a display device according to an embodiment. Fig. 9 is a schematic cross-sectional view showing a moisture permeation path in a display device.

[0199] Combination Figure 6 refer to Figure 7 and Figure 8In addition to a plurality of layers extending from the display area DPA, first, second, third, and fourth partition walls BR1, BR2, BR3, and BR4, first and second coupling members SEL1, and SEL2 may be disposed in the non-display area NDA of the display device 10.

[0200] Specifically, the buffer layer 120, the first insulating layer 130, the second insulating layer 150, and the third insulating layer 155 extending from the display area DPA may be arranged on the substrate SUB in the non-display area NDA. The buffer layer 120, the first insulating layer 130, the second insulating layer 150, and the third insulating layer 155 may be arranged to extend to the side of the substrate SUB, and the side of the buffer layer 120, the first insulating layer 130, the second insulating layer 150, and the third insulating layer 155 may be aligned with the side of the substrate SUB.

[0201] The connection line SDL may be arranged between the second insulating layer 150 and the third insulating layer 155. The connection line SDL may be a signal line connected to the thin film transistor in the display area DPA. In some embodiments, the connection line SDL may be a gate line or a sensing line SSL. In some embodiments, the connection line SDL may be a routing line connected to the thin film transistor in the display area DPA.

[0202] The fourth insulating layer 160 may be disposed on the third insulating layer 155. The fourth insulating layer 160 may extend from the display area DPA to the non-display area NDA.

[0203] The auxiliary electrode AXL may be arranged on the fourth insulating layer 160. The auxiliary electrode AXL may be electrically connected to the cathode electrode CE extending from the display area DPA. The auxiliary electrode AXL may have the same structure as the aforementioned anode electrode ANO. In some embodiments, the auxiliary electrode AXL may be a second voltage line VSL that applies a second voltage to the cathode electrode CE. In some embodiments, the auxiliary electrode AXL may be a routing line that electrically connects the second power pad WPD_VSS to the cathode electrode CE.

[0204] A pixel defining layer 170 covering the auxiliary electrode AXL may be disposed on the fourth insulating layer 160. The pixel defining layer 170 may extend from the display area DPA to the non-display area NDA. The pixel defining layer 170 may include a contact hole exposing the auxiliary electrode AXL disposed thereunder.

[0205] The cathode electrode CE may be disposed on the pixel defining layer 170. The cathode electrode CE may extend from the display area DPA to the non-display area NDA. The cathode electrode CE may be electrically connected to the auxiliary electrode AXL through a contact hole disposed in the pixel defining layer 170. The contact hole may be provided in plurality to reduce the contact resistance between the cathode electrode CE and the auxiliary electrode AXL.

[0206] The first to fourth partition walls BR1, BR2, BR3, and BR4 may be disposed on the third insulating layer 155. The first to fourth partition walls BR1, BR2, BR3, and BR4 may prevent overflow of the organic layer TFE2 of the thin film encapsulation layer TFEL extending from the display area DPA.

[0207] The first to fourth partition walls BR1, BR2, BR3, and BR4 may be sequentially arranged from the display area DPA to the non-display area NDA. The first to fourth partition walls BR1, BR2, BR3, and BR4 may be arranged to be spaced apart from each other.

[0208] The first partition wall BR1 may have a single-layer structure. The first partition wall BR1 may include the same material as the fourth insulating layer 160. The first partition wall BR1 may be formed through the same mask process as the fourth insulating layer 160.

[0209] Each of the second partition wall BR2, the third partition wall BR3, and the fourth partition wall BR4 may have a multilayer structure. Each of the second partition wall BR2, the third partition wall BR3, and the fourth partition wall BR4 may include a first layer 165 and a second layer 175 stacked on the first layer 165. The first layer 165 may be directly disposed on the third insulating layer 155 and may include the same material as the fourth insulating layer 160. The first layer 165 may be formed by the same mask process as the fourth insulating layer 160. The second layer 175 may be directly disposed on the first layer 165 and may include the same material as the pixel defining layer 170. The second layer 175 may be formed by the same mask process as the pixel defining layer 170.

[0210] The thin film encapsulation layer TFEL may extend from the display area DPA to be arranged in the non-display area NDA. The lower inorganic layer TFE1 and the upper inorganic layer TFE3 of the thin film encapsulation layer TFEL may be arranged to cover the first partition wall BR1, the second partition wall BR2, the third partition wall BR3, and the fourth partition wall BR4. In some embodiments, the lower inorganic layer TFE1 and the upper inorganic layer TFE3 may completely cover the first partition wall BR1, the second partition wall BR2, and the third partition wall BR3, and partially cover the fourth partition wall BR4. In some embodiments, the lower inorganic layer TFE1 and the upper inorganic layer TFE3 may completely cover the first partition wall BR1, the second partition wall BR2, the third partition wall BR3, and the fourth partition wall BR4.

[0211] The organic layer TFE2 may be disposed between the lower inorganic layer TFE1 and the upper inorganic layer TFE3 to cover the first partition wall BR1 and the second partition wall BR2. In some embodiments, the organic layer TFE2 may completely cover the first partition wall BR1 and partially cover the second partition wall BR2.

[0212] The color filter layer CFL, the low refractive layer LR, and the first capping layer CPL1 may extend from the display area DPA to be arranged on one surface of the counter substrate TSUB in the non-display area NDA. For example, the first color filter 321, the second color filter 322, the third color filter 323, the low refractive layer LR, and the first capping layer CPL1 may be stacked sequentially with each other. The first color filter 321, the second color filter 322, the third color filter 323, the low refractive layer LR, and the first capping layer CPL1 may extend to the non-display area NDA, and may be aligned and consistent with the lateral side of the counter substrate TSUB. However, the present disclosure is not limited thereto, and the first color filter 321, the second color filter 322, the third color filter 323, the low refractive layer LR, and the first capping layer CPL1 may be arranged to be spaced apart from the lateral side of the counter substrate TSUB.

[0213] The dam BK and the second capping layer CPL2 may be disposed on the first capping layer CPL1. The dam BK and the second capping layer CPL2 may be disposed to extend from the display area DPA to the non-display area NDA. The second capping layer CPL2 may be disposed to cover the dam BK and the first capping layer CPL1.

[0214] The spacer layer SPC may be disposed on the second capping layer CPL2. The spacer layer SPC may be disposed to extend from the display area DPA to the non-display area NDA. In some embodiments, the spacer layer SPC may be disposed in the shape of a pattern separated from the display area DPA.

[0215] The filling layer FIL may extend from the display area DPA to be arranged between the substrate SUB and the counter substrate TSUB in the non-display area NDA. The filling layer FIL may contact the upper inorganic layer TFE3 and the third insulating layer 155, and may contact the spacer layer SPC and the second capping layer CPL2. In addition, the filling layer FIL may contact the first coupling member SEL1 to be accommodated in the space separated by the substrate SUB, the counter substrate TSUB, and the first coupling member SEL1.

[0216] The first coupling member SEL1 and the second coupling member SEL2 may be disposed in the non-display area NDA of the display device 10. The first coupling member SEL1 and the second coupling member SEL2 may couple the substrate SUB to the counter substrate TSUB and may prevent moisture penetration from the outside.

[0217] The first coupling member SEL1 may be arranged adjacent to the display area DPA to surround the display area DPA in a plan view. The first coupling member SEL1 may be arranged in a closed loop shape to surround the display area DPA in a plan view. One surface of the first coupling member SEL1 may be positioned on the third insulating layer 155, and the other surface of the first coupling member SEL1 may be positioned on the spacer layer SPC. For example, the bottom surface of the first coupling member SEL1 may be in direct contact with the third insulating layer 155, and the top surface of the first coupling member SEL1 may be in direct contact with the spacer layer SPC.

[0218] As described above, the spacer layer SPC may be provided to maintain a cell gap between the substrate SUB and the counter substrate TSUB, and may include an organic material. Due to the characteristics of the organic material, it may be difficult to prevent moisture penetration. The spacer layer SPC formed of an organic material or the interface between the spacer layer SPC and the second capping layer CPL2 may serve as a path through which external moisture penetrates into the interior. Moisture that penetrates through this path may oxidize the upper inorganic layer TFE3 of the thin film encapsulation layer TFEL, and penetrate into the organic layer TFE2 to cause delamination at the interface between the lower inorganic layer TFE1 and the organic layer TFE2. Therefore, dark spots may appear in the display device 10, resulting in display defects.

[0219] In an embodiment, in order to block or absorb moisture penetrating into the spacer layer SPC or an interface between the spacer layer SPC and the second capping layer CPL2 , the first coupling member SEL1 may include a first moisture absorbent MAB1 .

[0220] The first coupling member SEL1 may include an ultraviolet (UV) curable resin. In some embodiments, the UV curable resin may be an acrylate-based resin. The first coupling member SEL1 may include a first moisture absorbent MAB1. The first moisture absorbent MAB1 may absorb or remove moisture or oxygen permeated from the outside through a physical or chemical reaction.

[0221] The first moisture absorbent MAB1 may include at least one of a metal salt and a metal oxide. In some embodiments, the metal oxide may be lithium oxide (Li 2 O), sodium oxide (Na 2 O), barium oxide (BaO), calcium oxide (CaO), magnesium oxide (MgO), etc. The metal salt may be lithium sulfate (Li 2 SO 4 ), sodium sulfate (Na 2 SO 4 ), calcium sulfate (CaSO 4 ), magnesium sulfate (MgSO 4 ), cobalt sulfate (CoSO 4 ), gallium sulfate (Ga 2 (SO4 ) 3 ), titanium sulfate (Ti(SO 4 ) 2 ) or nickel sulfate (NiSO 4 ) sulfates, such as calcium chloride (CaCl 2 ), magnesium chloride (MgCl 2 ), Strontium chloride (SrCl 2 ), yttrium chloride (YCl 3 ), copper chloride (CuCl 2 ), cesium fluoride (CsF), tantalum fluoride (TaF 5 ), niobium fluoride (NbF 5 ), lithium bromide (LiBr), calcium bromide (CaBr 2 ), cesium bromide (CeBr 3 ), selenium bromide (SeBr 4 ), vanadium bromide (VBr 3 ), magnesium bromide (MgBr 2 ), barium iodide (BaI 2 ) or magnesium iodide (MgI 2 ) of metal halides, barium perchlorate (Ba(ClO 4 ) 2 ), magnesium perchlorate (Ba(ClO 4 ) 2 ) etc. However, the present disclosure is not limited thereto.

[0222] The particle size of the first moisture absorbent MAB1 may range from 10 nm to 1000 nm. In some embodiments, the first moisture absorbent MAB1 may be made of the same material or made of different materials. In some embodiments, the first moisture absorbent MAB1 may be made of particles having the same size or different sizes.

[0223] The first moisture absorbent MAB1 may be included in the first coupling member SEL1 at 20 to 50 weight % relative to the total weight of the first coupling member SEL1. When the first moisture absorbent MAB1 is included within the above range, hygroscopicity may be imparted to the first coupling member SEL1 while maintaining processability thereof.

[0224] The first coupling member SEL1 may further include spacer particles SLP. The spacer particles SLP may be used to enhance the support force of the first coupling member SEL1. In some embodiments, the spacer particles SLP may be spherical spacers. In addition, in some embodiments, the spacer particles SLP may be made of particles including organic materials or inorganic materials.

[0225] refer to Fig. 9, external moisture and oxygen may penetrate into the interior along the spacer layer SPC made of an organic material or the interface between the spacer layer SPC and the second capping layer CPL2. The first coupling member SEL1 including the first moisture absorber MAB1 of the present disclosure is in direct contact with the spacer layer SPC, so that moisture and oxygen moving along the spacer layer SPC may be absorbed or removed by the first moisture absorber MAB1 of the first coupling member SEL1. Therefore, the moisture penetration path in the area in contact with the first coupling member SEL1 may be blocked, thereby preventing oxidation of the upper inorganic layer TFE3 in the display device 10 and delamination of the organic layer TFE2 and the lower inorganic layer TFE1.

[0226] The second coupling member SEL2 may encapsulate the side surface of the substrate SUB and the side surface of the counter substrate TSUB coupled by the first coupling member SEL1. The second coupling member SEL2 may directly cover the side surface of the substrate SUB and the side surface of the counter substrate TSUB. In some embodiments, the second coupling member SEL2 may be partially disposed inwardly between the substrate SUB and the counter substrate TSUB. For example, the second coupling member SEL2 may cover a portion of the spacer layer SPC and a portion of the third insulating layer 155.

[0227] The second coupling member SEL2 may contact the side surface of at least one of the counter substrate TSUB, the color filter layer CFL, the low refractive layer LR, the first capping layer CPL1, the second capping layer CPL2, and the spacer layer SPC. In some embodiments, the second coupling member SEL2 may contact the corresponding side surfaces of the counter substrate TSUB, the color filter layer CFL, the low refractive layer LR, the first capping layer CPL1, the second capping layer CPL2, and the spacer layer SPC.

[0228] The second coupling member SEL2 may be arranged to be spaced apart from the first coupling member SEL1. However, the present disclosure is not limited thereto, and the second coupling member SEL2 and the first coupling member SEL1 may partially contact each other. A pore may be arranged in a space between the first coupling member SEL1 and the second coupling member SEL2.

[0229] As described above, the display device 10 according to the embodiment may include the first moisture absorbent MAB1 in the first coupling member SEL1 contacting the spacer layer SPC so that a moisture permeation path caused by the spacer layer SPC may be blocked or removed to prevent defects in the display device 10 .

[0230] Fig.10 is a schematic cross-sectional view of a display device according to another embodiment. Fig.11 is a schematic cross-sectional view showing a moisture permeation path of a display device.

[0231] refer to Fig.10 and Fig.11, this embodiment and Figures 7 to 9 The embodiment of FIG. 5 may be different from that of FIG. 5 at least in that the second coupling member SEL2 further includes a second moisture absorbent MAB2. Hereinafter, repeated descriptions will be omitted and the differences will be described.

[0232] The display device 10 according to the embodiment may include moisture absorbents in the first coupling member SEL1 and the second coupling member SEL2, respectively. Specifically, the first coupling member SEL1 may include a first moisture absorbent MAB1, and the second coupling member SEL2 may include a second moisture absorbent MAB2.

[0233] The second coupling member SEL2 may include a UV curable resin. In some embodiments, the UV curable resin may be an acrylate-based resin. The second coupling member SEL2 may include a second moisture absorbent MAB2. The second moisture absorbent MAB2 may absorb or remove moisture or oxygen permeated from the outside through a physical or chemical reaction. The second moisture absorbent MAB2 may include the materials discussed above as the first moisture absorbent MAB1.

[0234] The particle size of the second moisture absorbent MAB2 may range from 10 nm to 1000 nm. In some embodiments, the second moisture absorbent MAB2 may be made of the same material or made of different materials. In some embodiments, the second moisture absorbent MAB2 may be made of particles having the same size or different sizes.

[0235] The second moisture absorbent MAB2 may be contained in the second coupling member SEL2 in an amount of 20% to 50% by weight relative to the total weight of the second coupling member SEL2. When the content of the second moisture absorbent MAB2 is within the above range, the second coupling member SEL2 may be provided with moisture absorbency while maintaining the processability of the second coupling member SEL2.

[0236] The above-mentioned low-refractive layer LR may include an organic material. Due to the characteristics of organic materials, it may be difficult to prevent moisture penetration. The low-refractive layer LR made of an organic material or the interface between the low-refractive layer LR and the first capping layer CPL1 may serve as a path through which external moisture penetrates into the interior. Moisture that penetrates through this path may cause delamination at the interface between the first color filter 321 of the color filter layer CFL and the opposing substrate TSUB. Therefore, peeling of the color filter layer CFL of the display device 10 may occur, resulting in display defects.

[0237] In an embodiment, by arranging the second coupling member SEL2 including the second moisture absorbent MAB2, moisture penetrating from the side surface of the display device 10 into the low refractive layer LR or the interface between the low refractive layer LR and the first capping layer CPL1 can be blocked or absorbed. Therefore, the moisture penetration path caused by the low refractive layer LR is blocked, thereby preventing delamination at the interface between the first color filter 321 of the display device 10 and the counter substrate TSUB.

[0238] In the embodiment, the first coupling member SEL1 includes the first moisture absorbent MAB1 and the second coupling member SEL2 includes the second moisture absorbent MAB2 has been described as an example, but the present disclosure is not limited thereto. For example, an embodiment in which the second coupling member SEL2 includes the second moisture absorbent MAB2 and the first coupling member SEL1 does not include the first moisture absorbent MAB1 may also be applied.

[0239] Fig.12 is a schematic cross-sectional view showing a display device according to still another embodiment.

[0240] refer to Fig.12 , this embodiment and Figures 7 to 9 The embodiments may differ at least in the formation of the first capping layer CPL1 and / or the second capping layer CPL2.

[0241] The first capping layer CPL1 may cover and protect the low-refractive layer LR. The first capping layer CPL1 may be arranged to be in direct contact with one surface of the low-refractive layer LR. The first capping layer CPL1 may be made of an inorganic material to protect the low-refractive layer LR, but it may be difficult to block moisture penetration by 100%. In addition, the second capping layer CPL2 may cover and protect the dam BK, the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2. The second capping layer CPL2 may also be made of an inorganic material, but it may be difficult to block moisture penetration by 100%. Therefore, in an embodiment, the first capping layer CPL1, the second capping layer CPL2, or the first capping layer CPL1 and the second capping layer CPL2 may be made of silicon oxynitride (Si x O y N z ) is formed to improve the barrier properties of the first capping layer CPL1, the second capping layer CPL2, or the first capping layer CPL1 and the second capping layer CPL2. In some embodiments, the first capping layer CPL1 may include silicon oxynitride (Si x O y N z In some embodiments, the second capping layer CPL2 may include silicon oxynitride (Si x O y N zIn some embodiments, the first capping layer CPL1 and the second capping layer CPL2 may include silicon oxynitride (Si x O y N z ).

[0242] For example, the first capping layer CPL1 or the second capping layer CPL2 may include silicon oxynitride (Si x O y N z ):

[0243] [Chemical formula 1]

[0244] Si x O y N z (30≤x≤40, 1≤y≤5 and 55≤z≤70),

[0245] Here, the unit of each of x, y and z is atomic %.

[0246] As shown in Chemical Formula 1, silicon oxynitride (Si x O y N z ) can be formed so that the atomic ratio of oxygen is relatively small and the atomic ratio of nitrogen is relatively large. x O y N z ) is reduced, oxidation occurs more actively, and thus silicon oxynitride (Si x O y N z ) may be oxidized when it comes into contact with moisture that penetrates from the outside. x O y N z ) can capture moisture penetrating from the outside to block moisture penetration. In addition, if the atomic ratio of nitrogen increases, the refractive index of the layer can increase. The increase in the refractive index of the first capping layer CPL1 can reduce the light transmitted through the low refractive layer LR, thereby deteriorating the luminous efficiency.

[0247] In addition, the silicon oxynitride (Si x O y N z ) can reduce damage caused by plasma during the film manufacturing process and reduce H 2 In some embodiments, the silicon oxynitride (Si 2O 2 ) of the first capping layer CPL1 or the second capping layer CPL2 x O y N z ), the atomic ratio of nitrogen may be greater than the atomic ratio of silicon and the atomic ratio of oxygen, and the atomic ratio of silicon may be greater than the atomic ratio of oxygen.

[0248] Therefore, in an embodiment, the first capping layer CPL1 or the second capping layer CPL2 may be made of silicon oxynitride (Si 2O 2 ) having an atomic ratio of 30% to 40% silicon, an atomic ratio of 1% to 5% oxygen, and an atomic ratio of 55% to 70% nitrogen. x O y N z ) is formed, thereby blocking moisture penetration to improve the barrier properties and prevent the reduction of luminous efficiency.

[0249] Hereinafter, an experimental example of the aforementioned display device 10 will be described.

[0250] <Manufacturing Example: Manufacture of Display Device>

[0251] Example

[0252] Made including Figure 7 1 and 2. Here, the first coupling member SEL1 includes 30 weight % of CaO moisture absorbent.

[0253] Comparative Example 1 and Comparative Example 2

[0254] The display device was manufactured under the same conditions as those of the example, but no moisture absorbent was included in the first coupling member SEL1.

[0255] <Experimental Example 1: OH Measurement of Spacer Layer and First Coupling Member>

[0256] After subjecting the display devices manufactured according to the example and comparative examples 1 and 2 to reliability test conditions (high temperature and high humidity), the OH content of the spacer layer and the first coupling member was measured over time using a dynamic secondary ion mass spectrometer (D-SIMS). The results are shown in Fig.13 middle.

[0257] Fig.13 is a schematic graph showing the OH contents of the spacer layer and the first coupling member according to Experimental Example 1. Fig.13 , the horizontal axis indicates time, and the vertical axis indicates the intensity of OH.

[0258] refer to Fig.13 , compared with Comparative Examples 1 and 2, in the example, the OH content of the spacer layer SPC is reduced, and the OH content of the first coupling member SEL1 is increased.

[0259] Through these results, it is confirmed that the exemplary display device includes a moisture absorbent in the first coupling member SEL1 , and thus moisture penetrating into the spacer layer SPC is absorbed by the moisture absorbent of the first coupling member SEL1 .

[0260] <Experimental Example 2: Moisture Permeability Evaluation>

[0261] Display devices manufactured according to Comparative Example 1 and Example were prepared. Here, the first capping layer of Comparative Example 1 was made of SiON (the atomic ratio of O was 55% and the atomic ratio of N was 5%), and the first capping layer of Example was made of SiON (the atomic ratio of O was 5% and the atomic ratio of N was 55%). After subjecting the display device to reliability test conditions (high temperature and high humidity), D in the first capping layer (LR capping layer) was measured using D-SIMS. 2 The change of D content of O (heavy water) over time. 2 O's H, so D represents H by replacing H with D. These results are shown in Fig.14 middle.

[0262] Fig.14 is a graph showing the D in the low refractive layer and the first capping layer according to Experimental Example 2 2 Schematic graph of the D content of O.

[0263] refer to Fig.14 , compared with the first capping layer in Comparative Example 1, the D content of the first capping layer in Example is significantly reduced.

[0264] Through these results, it is confirmed that the exemplary first capping layer can reduce moisture permeation by including different atomic ratios of SiON.

[0265] At the end of the detailed description, those skilled in the art will recognize that many changes and modifications can be made to the embodiments without departing substantially from the principles of the present disclosure. Therefore, the embodiments of the present disclosure disclosed are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A display device, comprising: A substrate, the substrate comprising a display area and a non-display area; a light emitting element layer, the light emitting element layer being arranged on the display area of ​​the substrate; a counter substrate, the counter substrate facing the substrate; a low-refractive layer, the low-refractive layer being arranged on a surface of the opposing substrate; a first capping layer, the first capping layer being arranged on a surface of the low-refractive layer; a second capping layer, the second capping layer being arranged on a surface of the first capping layer; a spacer layer disposed on a surface of the second capping layer; a first coupling member disposed between the substrate and the counter substrate and coupling the substrate to the counter substrate; as well as a second coupling member which is arranged on a side surface of the substrate and a side surface of the counter substrate and couples the substrate to the counter substrate, wherein the first coupling member extends to the spacer layer, and The first coupling member includes a first moisture absorbent.

2. The display device according to claim 1, wherein: In a plan view, the first coupling member surrounds the display area.

3. The display device according to claim 1, wherein: The first moisture absorbent is contained in the first coupling member at a weight percentage of 20 to 50% relative to the total weight of the first coupling member.

4. The display device according to claim 1, wherein: The first coupling member further comprises spacer particles.

5. The display device according to claim 1, wherein: The second coupling member is spaced apart from the first coupling member, and In a plan view, the second coupling member surrounds the first coupling member.

6. The display device according to claim 1, wherein: The second coupling member includes a second moisture absorbent.

7. The display device according to claim 6, wherein: The second moisture absorbent is contained in the second coupling member in an amount of 20 to 50 weight % relative to the total weight of the second coupling member.

8. The display device according to claim 1, wherein: The second coupling member extends to a side surface of each of the low-refractive layer, the first capping layer, the second capping layer, and the spacer layer.

9. The display device according to claim 1, wherein: At least one of the first capping layer and the second capping layer includes silicon oxynitride represented by Chemical Formula 1: [Chemical formula 1] Si x O y N z where 30 ≤ x ≤ 40, 1 ≤ y ≤ 5 and 55 ≤ z ≤ 70 Here, the unit of each of x, y and z is atomic %.

10. The display device according to claim 1, further comprising: a color filter layer, the color filter layer being between the counter substrate and the low refractive layer, Wherein, the color filter layer comprises: a first color filter disposed on a surface of the counter substrate; a second color filter disposed on a surface of the first color filter; and a third color filter disposed on a surface of the second color filter, and The second coupling member extends to a side surface of the color filter layer.

11. The display device according to claim 1, further comprising: a wavelength conversion layer, wherein the wavelength conversion layer is between the first capping layer and the second capping layer, Wherein, the wavelength conversion layer comprises: a first light-transmitting member that completely transmits the first color light emitted from the light-emitting element layer; a second light-transmitting member that converts the first color light emitted from the light-emitting element layer into a second color light; and A third light-transmitting member converts the first color light emitted from the light-emitting element layer into a third color light.

12. The display device according to claim 1, further comprising: a thin film encapsulation layer, the thin film encapsulation layer being arranged on the light emitting element layer, Wherein, the thin film encapsulation layer comprises: a lower inorganic layer, the lower inorganic layer overlapping the light emitting element layer; an organic layer disposed on the lower inorganic layer; and An upper inorganic layer is disposed on the organic layer.

13. The display device according to claim 12, further comprising: a filling layer, the filling layer being between the thin film encapsulation layer and the second capping layer, Wherein, the filling layer extends to the first connecting member.

14. A display device, comprising: substrate; a light emitting element layer, the light emitting element layer being arranged on the substrate; a counter substrate, the counter substrate facing the substrate; a low-refractive layer, the low-refractive layer being arranged on a surface of the opposing substrate; a first capping layer, the first capping layer being arranged on a surface of the low-refractive layer; a second capping layer, the second capping layer being arranged on a surface of the first capping layer; a spacer layer disposed on a surface of the second capping layer; a first coupling member disposed between the substrate and the counter substrate and coupling the substrate to the counter substrate; as well as a second coupling member which is arranged on a side surface of the substrate and a side surface of the counter substrate and couples the substrate to the counter substrate, Wherein, at least one of the first capping layer and the second capping layer comprises silicon oxynitride represented by Chemical Formula 1: [Chemical formula 1] Si x O y N z , where 30 ≤ x ≤ 40, 1 ≤ y ≤ 5, and 55 ≤ z ≤ 70, Here, the unit of each of x, y and z is atomic %.

15. The display device according to claim 14, wherein: The first coupling member comprises a first moisture absorbent, and The first moisture absorbent is contained in the first coupling member in an amount of 20 to 50 weight % relative to the total weight of the first coupling member.

16. The display device according to claim 14, wherein: The second coupling member comprises a second moisture absorbent, and The second moisture absorbent is contained in the second coupling member in an amount of 20 to 50 weight % relative to the total weight of the second coupling member.

17. The display device according to claim 14, wherein: The second coupling member is spaced apart from the first coupling member, and In a plan view, the second coupling member surrounds the first coupling member.

18. The display device according to claim 17, wherein: There is a gap between the first coupling member and the second coupling member.

19. The display device according to claim 14, wherein: The spacer layer comprises an organic material, and The first coupling member extends to the spacer layer.

20. The display device according to claim 14, wherein: The low refractive layer comprises an organic material, and The second coupling member is in contact with a side surface of the low-refractive layer.

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