Integrated optical element and method for forming metasurface
By designing a penetrating super interface, using multi-layer structure and hole design, the problem of low efficiency of gate-adjustable super interface is solved, and operation is achieved at high penetration wavelength positions is improved, overall efficiency is improved and high-order diffraction is reduced.
Patent Information
- Application Number
- CN202410145660.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-11-21
- Filing Date
- 2024-02-01
- Publication Date
- 2025-05-23
AI Technical Summary
The cell antenna with gate-adjustable interfaces is usually located at a wavelength with a low reflectivity, resulting in low overall component efficiency.
A penetrating superinterface is designed, including a plurality of conductive layers, a first dielectric layer and a first transparent conductive layer, the conductive layers are arranged in a specific direction and have holes, and the protruding structure formed has holes to improve penetration.
By designing a penetrating super interface, operating at wavelengths with high penetration rates improves the overall efficiency of the super interface, avoiding the generation of high-order diffraction, and improving the quality of the beam.
Smart Images
Figure CN120028968A_ABST
Abstract
Description
Technical Field
[0001] Some embodiments of the present disclosure relate to an integrated optical device and a method of forming a metainterface. Background Art
[0002] The gate-controllable metainterface can generally be a reflective element, so a voltage can be applied to the gate to manipulate the carrier concentration of the transparent conductive film sandwiched in the middle of the structure. By changing its optical properties, the element can provide different phase compensations (phase shift) at different positions to control the angle of the reflected light beam. However, the unit antenna of the gate-controllable metainterface is often located at a wavelength with low reflectivity, which will cause the element to operate in a band with low reflectivity, resulting in poor overall element efficiency. Summary of the invention
[0003] Some embodiments of the present disclosure provide an optical element, comprising a light-emitting element layer and a metainterface. The metainterface is on the light-emitting element layer. The metainterface comprises a plurality of conductive layers, a first dielectric layer, and a first transparent conductive layer. The conductive layers are arranged along a first direction, wherein each of the conductive layers has a plurality of holes. The first dielectric layer covers the conductive layer. The first transparent conductive layer covers the first dielectric layer.
[0004] In some embodiments, the metainterface further includes a substrate below the plurality of conductive layers.
[0005] In some embodiments, the first dielectric layer of the metainterface contacts the substrate.
[0006] In some embodiments, the metainterface further comprises a second transparent conductive layer and a second dielectric layer. The second transparent conductive layer is between the substrate and the conductive layer. The second dielectric layer is between the second transparent conductive layer and the conductive layer.
[0007] In some embodiments, the first dielectric layer of the metainterface contacts the second dielectric layer.
[0008] In some embodiments, the holes of each of the conductive layers are arranged along a second direction different from the first direction.
[0009] In some embodiments, the conductive layers are arranged in a two-dimensional array.
[0010] In some embodiments, the holes of each of the conductive layers include a plurality of first holes and a plurality of second holes, the first holes are arranged along a first direction and a second direction different from the first direction, one of the second holes is between four first holes, and the center of one of the second holes is aligned with the center of a line connecting the centers of two adjacent first holes.
[0011] In some embodiments, one of the holes is a concave quadrilateral.
[0012] In some embodiments, one of the holes comprises two circular holes connected by a rectangular hole.
[0013] Some embodiments of the present disclosure provide a method for forming a metainterface, comprising forming a conductive material layer on a substrate, patterning the conductive material layer into a plurality of conductive layers, the conductive layers being arranged on the substrate and along a first direction, wherein the conductive layers have a plurality of holes, forming a first dielectric layer on the conductive layer, and forming a first transparent conductive layer on the first dielectric layer.
[0014] In some embodiments, when the first dielectric layer is formed on the conductive layer, the first dielectric layer extends from a plurality of sidewalls of the conductive layer to an upper surface of the substrate.
[0015] In some embodiments, before forming the metal material layer on the substrate, it further includes forming a second transparent conductive layer on the substrate, and forming a second dielectric layer on the second transparent conductive layer, wherein the second dielectric layer is between the second transparent conductive layer and the conductive layer.
[0016] In some embodiments, after forming the first dielectric layer on the conductive layer, the first dielectric layer extends from a plurality of sidewalls of the conductive layer to an upper surface of the second dielectric layer.
[0017] In some embodiments, the holes of each of the conductive layers are arranged along the first direction.
[0018] In some embodiments, the holes of each of the conductive layers are further arranged along a second direction different from the first direction.
[0019] In some embodiments, the conductive layers are arranged in a two-dimensional array.
[0020] In some embodiments, the holes of each of the conductive layers include a plurality of first holes and a plurality of second holes, the first holes are arranged along a first direction and a second direction different from the first direction, one of the second holes is between four first holes, and the center of one of the second holes is aligned with the center of a line connecting the centers of two adjacent first holes.
[0021] In some embodiments, one of the holes is a concave quadrilateral.
[0022] In some embodiments, one of the holes comprises two circular holes connected by a rectangular hole. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 Schematic diagram of optical elements according to some embodiments of the present disclosure.
[0024] Figure 2 To illustrate Figure 1 Upper view of a part of the metasurface.
[0025] Figure 3 To illustrate in some embodiments along Figure 2 Cross-sectional view of the metasurface along line A-A.
[0026] Figure 4 To illustrate in some other embodiments along Figure 2 Cross-sectional view of the metasurface along line A-A.
[0027] Figures 5 to 8 To illustrate in some embodiments of the present disclosure Figure 4 Cross-sectional view of the process of the metasurface.
[0028] Fig. 9 And Fig.10 Cross-sectional view of the process of the metasurface in some other embodiments of the present disclosure.
[0029] Fig.11 Upper view of the metasurface in some other embodiments.
[0030] Fig.12 Upper view of the metasurface in some other embodiments.
[0031] Fig.13 Upper view of the metasurface in some other embodiments.
[0032] Fig.14 Upper view of the protruding structure in some embodiments.
[0033] Fig.15 Upper view of the protruding structure in some other embodiments. Detailed Description
[0034] Some embodiments of the present disclosure provide an optical element including a metasurface with an innovative structure. The metasurface of some embodiments of the present disclosure is a transmissive metasurface, and the protruding structure of the metasurface has holes. Therefore, the metasurface of some embodiments of the present disclosure can operate at a wavelength position with a higher transmittance to improve the efficiency of the metasurface.
[0035] Figure 1The integrated optical element 100 of some embodiments of the present disclosure is shown. The integrated optical element 100 includes a light emitting element layer 200 and a metainterface 300. The metainterface 300 is on the light emitting element layer 200. The light emitting element layer 200 may be a layer including any form of light emitting element. For example, the light emitting element layer 200 may include a carrier and light emitting elements arranged on the carrier, and the light emitting element may be a light emitting diode chip, a micro light emitting diode chip, an organic light emitting diode chip, a semiconductor laser chip, or the like.
[0036] The metainterface 300 is on the light emitting device layer 200. The metainterface 300 of some embodiments of the present disclosure is a transmissive metainterface. That is, the light emitted by the light source can penetrate the metainterface 300, and the metainterface 300 can change the optical properties of the light emitted by the light source. Therefore, the light emitting direction of the metainterface 300 and the light emitting device layer 200 is consistent (for example, both emit light upward).
[0037] Figure 2 To illustrate Figure 1 300 is a top view of a portion of the metainterface 300 in FIG. The metainterface 300 includes a plurality of channels, such as channels CH1 and CH2, and each channel may include a plurality of protrusion structures, such as channel CH1 may include protrusion structures A1 and A2, and channel CH2 may include protrusion structures A3 and A4. In some embodiments, the protrusion structures A1, A2, A3, and A4 include holes H, and the protrusion structures A1, A2, A3, and A4 are arranged along a first direction D1 and extend along a second direction D2. In some embodiments, each protrusion structure includes a row of holes H. Each hole H is a unit antenna. The size of the hole H may determine the range of wavelengths of light that can pass through the metainterface 300. In some embodiments, the hole H is a sub-wavelength structure, and the aperture of the hole H is approximately between 1 / 10 and 1 / 2 of the wavelength of the incident light.
[0038] The metainterface 300 can be used to change the deflection angle of incident light. When light enters the metainterface 300 from below the metainterface 300, the deflection angle can be expressed by the following relationship:
[0039] θ=sin -1 (λ / Λ).
[0040] θ is the deflection angle, λ is the wavelength of the incident light, and Λ is the width of the macro-period of the metainterface 300. Here, the “macro-period” refers to the total width of a specific number of channels. For example, Figure 2 The channels CH1 and CH2 in the 2 , and the large period Λ 2The channels CH1 and CH2 in the same deflection angle can be used to adjust the same deflection angle. Therefore, a specific large cycle can be selected for a specific deflection angle to apply a corresponding voltage, and different channels within the large cycle (for example, the large cycle Λ 2 Different voltages are applied to the channels CH1, CH2 in the large period. When voltage is applied to the channel, the carrier concentration of the transparent conductive layer of the channel will change, thereby changing the optical properties of the channel. When different voltages are applied to different channels in the large period, the carrier concentration of the transparent conductive layer between different channels will be different (for example, gradually changing along the first direction D1), so the optical properties between different channels are different. In this way, the metainterface 300 can provide different phase compensations (phase shift) at different positions to adjust the angle deflection of the incident light beam.
[0041] The number of channels in each macrocycle may determine the fineness of the light beam control capability. For example, when the number of channels in each macrocycle is greater, the fineness of the light beam control capability is higher. In some embodiments, each macrocycle may include two channels, such as channel CH1 and channel CH2, and channel CH1 may include protruding structures A1 and A2, and channel CH2 may include protruding structures A3 and A4. However, the present disclosure is not limited thereto.
[0042] Figure 3 To illustrate some embodiments along the Figure 2 The metainterface 300 is a cross-sectional view of the line AA. The metainterface 300 includes a substrate 310, a conductive layer 340, a dielectric layer 350, and a transparent conductive layer 360. Specifically, the conductive layer 340 is on the substrate 310 and contacts the substrate 310. The conductive layer 340 may have a specific shape, and the conductive layer 340 has a hole H. The conductive layer 340 may be used to determine the protruding structures A1, A2, A3, A4 ( Figure 2 ) shape. The dielectric layer 350 conformally covers the conductive layer 340, and the transparent conductive layer 360 conformally covers the dielectric layer 350. In some embodiments, the dielectric layer 350 also conformally covers the substrate 310, so that the dielectric layer 350 extends along the upper surface of the substrate 310 to the sidewall and upper surface of the conductive layer 340. That is, the conductive layer 340 is sandwiched by the dielectric layer 350 and the substrate 310. The conductive layer 340 and the transparent conductive layer 360 are made of different conductive materials, and the conductive materials of the conductive layer 340 and the transparent conductive layer 360 have different carrier concentrations. The carrier concentration of the conductive layer 340 is greater than the carrier concentration of the transparent conductive layer 360. For example, the carrier concentration of the conductive layer 340 itself is more than two orders of magnitude greater than the carrier concentration of the transparent conductive layer 360. In some embodiments, the carrier concentration of the conductive layer 340 is on the order of 10 22 The carrier concentration of the transparent conductive layer 360 is on the order of 10 20 / cubic centimeter. It should be noted that Figure 3 Only the cross-sectional view of the protruding structure A1 is shown. The cross-sectional views of other protruding structures may also be shown. Figure 3 Therefore, the metainterface 300 may include a plurality of conductive layers 340, the conductive layers 340 are arranged on the substrate 310 and along the first direction D1, wherein each of the conductive layers 340 has a plurality of holes H, such as Figure 2 In addition, the transparent conductive layer 360 on each protruding structure is not connected to each other, so in subsequent operations, the transparent conductive layer 360 on each protruding structure can be independently regulated.
[0043] Figure 3 The metainterface 300 has a single gate structure, that is, a voltage V u To the transparent conductive layer 360, a voltage V g (V g The carrier concentration of the transparent conductive layer 360 near the dielectric layer 350 can be controlled. u Different, so the carrier concentration of the transparent conductive layer between different channels will be different (for example, along Figure 2 The first direction D1 of the channel is gradually changed, so the optical characteristics of different channels are different. In this way, the metainterface 300 can provide different phase compensations at different positions to adjust the angle of the incident light beam. In this embodiment, since the channel is along the first direction D1 ( Figure 2 ) arrangement, that is, the channels constitute a one-dimensional metainterface, which can control the angular deflection of the incident light beam in one-dimensional direction.
[0044] In the present disclosure, the metainterface 300 is a transmissive metainterface, and the protruding structures A1, A2, A3 and A4 of the metainterface 300 have holes H. Compared with the reflective metainterface, which is often designed at a wavelength position with a lower reflectivity, resulting in poor metainterface efficiency, and the reflective metainterface is prone to generate additional stray light and high-order diffraction, the holes H of the metainterface 300 are anti-structures designed according to the Babinet's principle, and the plasma resonance mode brought by the holes H will be located at a wavelength position with a higher transmittance, which helps to improve the overall efficiency of the metainterface 300. In addition, since the conductive layer 340 of the metainterface 300 of the present disclosure has holes H and the holes H are sub-wavelength structures, they can be used to avoid the generation of high-order diffraction (such as grating diffraction). In this way, the quality of the penetrating light beam can be improved. In addition, since the metainterface 300 of the present invention is a transmissive metainterface, it is easy to combine with the light emitting element layer to form an integrated optical element 100 ( Figure 1). If the metainterface is a reflective metainterface, the light-emitting element layer is located on the metainterface. If the integrated optical element is to be maintained to emit light upward, there will be many design restrictions due to the existence of the light-emitting element layer.
[0045] Figure 4 To illustrate other embodiments along Figure 2 A cross-sectional view of the metainterface 300 along line AA. Figure 4 MetaInterface 300 and Figure 3 The difference is that Figure 4 The metainterface 300 further includes a transparent conductive layer 320 and a dielectric layer 330. The transparent conductive layer 320 is between the substrate 310 and the conductive layer 340, and the dielectric layer 330 is between the transparent conductive layer 320 and the conductive layer 340, and the conductive layer 340 contacts the dielectric layer 330 but does not contact the substrate 310. The dielectric layer 350 conformally covers the conductive layer 340, and the transparent conductive layer 360 conformally covers the dielectric layer 350. In some embodiments, the dielectric layer 350 also conformally covers the dielectric layer 330, so that the dielectric layer 350 extends along the upper surface of the dielectric layer 330 to the sidewall and upper surface of the conductive layer 340. The conductive layer 340 and the transparent conductive layers 320 and 360 are made of different conductive materials, and the conductive materials of the conductive layer 340 and the transparent conductive layers 320 and 360 have different carrier concentrations. The carrier concentration of the conductive layer 340 is greater than the carrier concentration of the transparent conductive layers 320 and 360. For example, the carrier concentration of the conductive layer 340 itself is greater than the carrier concentration of the transparent conductive layers 320 and 360 by more than two orders of magnitude. In some embodiments, the carrier concentration of the conductive layer 340 is greater than 10 22 The carrier concentration of the transparent conductive layers 320 and 360 is on the order of 10 20 / cubic centimeter. It should be noted that Figure 4 Only the cross-sectional view of the protruding structure A1 is shown. The cross-sectional views of other protruding structures may also be shown. Figure 4 Therefore, the metainterface 300 may include a plurality of conductive layers 340, the conductive layers 340 are arranged on the substrate 310 and along the first direction D1, wherein each of the conductive layers 340 has a plurality of holes H, such as Figure 2 In addition, the transparent conductive layer 360 on each protruding structure is not connected to each other, and the transparent conductive layer 320 under each protruding structure is not connected to each other, so in subsequent operations, the transparent conductive layer 360 on each protruding structure and the transparent conductive layer 320 under the protruding structure can be independently regulated.
[0046] Figure 4 The metainterface 300 has a dual gate structure, which can apply different voltages V u With V bA voltage V may be applied to the transparent conductive layer 360 and the transparent conductive layer 320. g (V g The carrier concentration of the transparent conductive layer 360 near the dielectric layer 350 and the carrier concentration of the transparent conductive layer 320 near the dielectric layer 330 can be controlled. b Different, and different channels of the transparent conductive layer 360 are applied with V u Different, so the carrier concentration of the transparent conductive layer between different channels will be different (for example, along Figure 2 The first direction D1 of the channel is gradually changed, so the optical characteristics of different channels are different. In this way, the metainterface 300 can provide different phase compensations at different positions to adjust the angle of the incident light beam. In some embodiments, the metainterface 300 of the dual-gate structure can provide better light beam control capabilities than the metainterface 300 of the single-gate structure. In this embodiment, since the channel is along the first direction D1 ( Figure 2 ) arrangement, that is, the channels constitute a one-dimensional metainterface, which can control the angular deflection of the incident light beam in one-dimensional direction.
[0047] Figures 5 to 8 To illustrate some embodiments of the present disclosure Figure 4 A cross-sectional view of the process of the metainterface 300 is shown. Figure 5 , provide a substrate 310, form a transparent conductive layer 320 on the substrate 310, and then form a dielectric layer 330 on the transparent conductive layer 320. The transparent conductive layer 320 and the dielectric layer 330 are flat layers on the substrate 310. In some embodiments, the substrate 310 can be a glass substrate or other transparent substrate, so that the light source below can penetrate the metainterface 300. In some embodiments, the transparent conductive layer 320 can be indium tin oxide (ITO) or other suitable transparent conductive materials. The dielectric layer 330 can be Al 2 O 3 , HfO 2 In some embodiments, the dielectric layer 330 may be formed by atomic layer deposition.
[0048] refer to Figure 6 , a metal material layer 340' is formed on the dielectric layer 330. Next, referring to Figure 7 , the metal material layer 340' is patterned into a conductive layer 340, and the conductive layer 340 is along a first direction (eg Figure 2 The conductive layer 340 has a plurality of holes H. Specifically, the patterned conductive layer 340 is formed into a plurality of protruding structures (such as Figure 2The conductive layer 340 has a plurality of protruding structures A1, A2, A3, and A4, and each protruding structure has a plurality of holes H. The shape of the conductive layer 340 and the aperture size of the holes H can be determined according to actual conditions. In some embodiments, the conductive layer 340 can be made of a suitable material according to the applicable wavelength. For example, when the metainterface 300 is applicable to infrared rays, the conductive layer 340 can be gold, when the metainterface 300 is applicable to ultraviolet rays, the conductive layer 340 can be aluminum, and when the metainterface 300 is applicable to blue light, the conductive layer 340 can be silver.
[0049] refer to Figure 8 , a dielectric layer 350 is formed on the conductive layer 340. After the dielectric layer 350 is formed on the conductive layer 340, the dielectric layer 350 extends from the sidewall of the conductive layer 340 to the upper surface of the dielectric layer 330. The dielectric layer 350 and the dielectric layer 330 sandwich and surround the conductive layer 340. Next, a transparent conductive layer 360 is formed on the dielectric layer 350. In some embodiments, the dielectric layer 350 may be Al 2 O 3 , HfO 2 In some embodiments, the dielectric layer 350 may be formed by atomic layer deposition. The transparent conductive layer 360 may be indium tin oxide or other suitable transparent conductive materials. After the metainterface 300 is formed, the metainterface 300 may be placed on the light emitting element layer 200. Therefore, the metainterface 300 may be used to adjust the physical properties of the light emitted by the light emitting element layer 200.
[0050] Figure 3 The process and Figures 5 to 8 The process shown is similar. The difference is in the manufacturing Figure 3 When the metainterface is 300, Figure 5 The transparent conductive layer 320 and the dielectric layer 330 in the embodiment can be omitted. Figure 6 In the manufacturing process, the metal material layer 340' can be directly formed on the substrate 310, and then the following steps can be followed. Figure 3 When the metainterface 300 is formed, after the dielectric layer 350 is formed on the conductive layer 340, the dielectric layer 350 extends from the sidewall of the conductive layer 340 to the upper surface of the substrate 310. The dielectric layer 350 and the substrate 310 sandwich and surround the conductive layer 340.
[0051] Fig. 9 and Fig.10 FIG. 1 is a cross-sectional view illustrating the process of forming a metainterface 300 in some other embodiments of the present disclosure. Fig. 9 and Fig.10 In the embodiment, the metainterface 300 can be directly formed on the light emitting element layer 200. Fig. 9, a dielectric layer 250 is formed on the light emitting element layer 200. The dielectric layer 250 may be made of silicon oxide, silicon nitride, or the like.
[0052] refer to Fig.10 , forming a metainterface 300 on the dielectric layer 250. The method for forming the metainterface 300 is as follows Figures 5 to 8 The process shown is similar. The difference is that Fig.10 In the embodiment, the transparent conductive layer 320 is formed on the dielectric layer 250. In this way, the metainterface 300 can be directly formed on the light emitting device layer 200.
[0053] Fig.11 FIG. 4 is a top view of a metainterface 300 in some other embodiments. Fig.11 MetaInterface 300 and Figure 2 The difference is that Fig.11 The number of channels contained in the MetaInterface 300 is Figure 2 The number of channels included in the metainterface 300 is different, and Fig.11 The number of holes H included in each protruding structure of the metainterface 300 is also Figure 2 Each protruding structure of the metainterface 300 includes a different number of holes H. For example, Fig.11 The channels CH1, CH2, and CH3 in the system can form a large cycle Λ 3 In this embodiment, different voltages are applied to channels CH1, CH2, and CH3, so the optical characteristics of different channels are different. In this way, the metainterface 300 can provide different phase compensations at different positions to adjust the angle of the incident light beam. When the number of channels included in each large cycle increases, the angle of the incident light beam can be more finely adjusted. In addition, Fig.11 Each protruding structure of the metainterface 300 includes two rows of holes H. The number of holes H in each protruding structure can be designed according to actual conditions.
[0054] Fig.12 FIG. 4 is a top view of a metainterface 300 in some other embodiments. Fig.12 MetaInterface 300 and Fig.11 The difference is that Fig.12 The holes H include a first hole H1 and a second hole H2, the first hole H1 is arranged along the first direction D1 and the second direction D2, and the second hole H2 is arranged between the four holes H1, and the center of the second hole H2 is aligned with the center of the line connecting the centers of two adjacent first holes H1. Therefore, the number of holes H per unit area can be increased, so that the control capability of the metainterface 300 on the light beam is improved.
[0055] Fig.13FIG. 4 is a top view of a metainterface 300 in some other embodiments. Fig.13 The metainterface 300 includes a plurality of channels CH1, CH2, CH3, CH4, CH5, CH6, CH7, CH8 and CH9, each of which may include a protruding structure. The protruding structures are arranged along the first direction D1 and the second direction D2, and the first direction D1 is perpendicular to the second direction D2. Fig.13 In FIG. 3 , the channels (i.e., protruding structures) of the metainterface 300 are arranged in a two-dimensional array in a top view. Fig.13 Different voltages are applied to channels CH1, CH2, CH3, CH4, CH5, CH6, CH7, CH8 and CH9, so the optical characteristics of different channels are different. In this way, the metainterface 300 can provide different phase compensations (phase shift) at different positions to adjust the angle deflection of the incident light beam. When the channels form the metainterface 300 in a two-dimensional space, the angle deflection of the incident light beam can be adjusted in a two-dimensional direction.
[0056] Fig.14 FIG. 4 is a top view showing a protruding structure AN in some embodiments. Fig.14 The protruding structure AN may have a hole H, and the hole H is dumbbell-shaped. Specifically, the hole H is two circular holes connected by a rectangular hole. The protruding structure AN itself is rectangular, and the length P of the protruding structure A in the first direction D1 is x is 400 nm, and the length P in the second direction D2 is y The width W of the dumbbell neck of the hole H is 100 nanometers. When the protruding structure AN is in the above-mentioned shape, the protruding structure AN can be operated at a wavelength position with a higher transmittance. For example, when using Fig.14 When the protruding structure AN adjusts the deflection angle of the incident light beam, the wavelength of the incident light beam is about 1.5 microns, and the penetration rate of the incident light beam can reach 92%, and the phase adjustment capability can reach 141.6 degrees. The protruding structures AN can be arranged in a one-dimensional array or a two-dimensional array, so the metainterface composed of the protruding structures AN can adjust the angle deflection of the incident light beam in one-dimensional direction or two-dimensional direction.
[0057] Fig.15 The top view of the protruding structure AN in some other embodiments is shown. Fig.15 The protruding structure AN may have a hole H, and the hole H is boomerang-shaped. Specifically, the hole H may be a concave quadrilateral. In some embodiments, the four corners of the concave quadrilateral are formed by straight lines, such as Fig.15 In some other embodiments, the four corners of the concave quadrilateral may be rounded.
[0058] In summary, the transmissive metainterface of some embodiments of the present disclosure has multiple advantages. The metainterface has holes, and these holes can be designed according to Babinet's principle, so that the resulting plasma resonance mode will be located at a wavelength position with higher transmittance, which helps to improve the overall efficiency of the metainterface. In addition, since the conductive layer of the metainterface of the present case has holes and the holes are sub-wavelength structures, it can be used to avoid the generation of high-order diffraction (such as grating diffraction) and improve the quality of the penetrating light beam. In addition, since the metainterface of the present case is a transmissive metainterface, it is easy to combine with the light-emitting element layer to form an integrated optical element. The light-emitting element layer will not cause any interference to the light emitting direction of the integrated optical element.
[0059] The above descriptions are only some embodiments of the present disclosure, not all embodiments. Any equivalent changes made to the technical solution of the present disclosure by ordinary technicians in this field after reading the specification of the present disclosure are covered by the claims of the present disclosure.
[0060]
Explanation of symbols
[0061] 100: Integrated Optics
[0062] 200: Light-emitting element layer
[0063] 250: Dielectric layer
[0064] 300: Metainterface
[0065] 310: Substrate
[0066] 320: Transparent conductive layer
[0067] 330: Dielectric layer
[0068] 340: Conductive layer
[0069] 340': Metal material layer
[0070] 350: Dielectric layer
[0071] 360: Transparent conductive layer
[0072] AA: Line
[0073] A1, A2, A3, A4, AN: Protruding structure
[0074] CH1, CH2, CH3, CH4, CH5, CH6, CH7, CH8, CH9: Channel
[0075] D1: First direction
[0076] D2: Second direction
[0077] H: Hole
[0078] H1: First hole
[0079] H2: Second hole
[0080] P x :length
[0081] P y :length
[0082] W: width.
Claims
1. An integrated optical element, characterized in that: Include: a light emitting element layer; and A metainterface on the light-emitting element layer, wherein the metainterface comprises: A plurality of conductive layers are arranged along a first direction, wherein each of the plurality of conductive layers has a plurality of holes; a first dielectric layer covering the plurality of conductive layers; The first transparent conductive layer covers the first dielectric layer. 2 . The integrated optical device of claim 1 , wherein the metainterface further comprises a substrate below the plurality of conductive layers. 3 . The integrated optical device according to claim 2 , wherein the first dielectric layer of the metainterface contacts the substrate.
4. The integrated optical device according to claim 2, wherein the metainterface further comprises: a second transparent conductive layer between the substrate and the plurality of conductive layers; and A second dielectric layer is between the second transparent conductive layer and the plurality of conductive layers. The integrated optical device according to claim 4 , wherein the first dielectric layer of the metainterface contacts the second dielectric layer. 6 . The integrated optical device according to claim 1 , wherein the plurality of holes of each of the plurality of conductive layers are arranged along a second direction different from the first direction. 7 . The integrated optical device according to claim 1 , wherein the plurality of conductive layers are arranged in a two-dimensional array.
8. An integrated optical element according to claim 1, wherein the multiple holes of each of the multiple conductive layers include a multiple first holes and a multiple second holes, the multiple first holes are arranged along the first direction and a second direction different from the first direction, and one of the multiple second holes is between four of the multiple first holes, and the center of one of the multiple second holes is aligned with the center of a line connecting the centers of two adjacent ones of the multiple first holes. 9 . The integrated optical element of claim 1 , wherein one of the plurality of holes is a concave quadrilateral.
10. The integrated optical element of claim 1, wherein one of the plurality of holes comprises two circular holes connected by a rectangular hole.
11. A method for forming a metainterface, characterized in that: Include: forming a conductive material layer on a substrate; Patterning the conductive material layer into a plurality of conductive layers, wherein the plurality of conductive layers are arranged on the substrate along a first direction, wherein the plurality of conductive layers have a plurality of holes; forming a first dielectric layer on the plurality of conductive layers; as well as A first transparent conductive layer is formed on the first dielectric layer. 12 . The method according to claim 11 , wherein when the first dielectric layer is formed on the plurality of conductive layers, the first dielectric layer extends from the plurality of sidewalls of the plurality of conductive layers to the upper surface of the substrate.
13. The method according to claim 11, wherein before forming the conductive material layer on the substrate, the method further comprises: forming a second transparent conductive layer on the substrate; and A second dielectric layer is formed on the second transparent conductive layer, and the second dielectric layer is between the second transparent conductive layer and the plurality of conductive layers. 14 . The method according to claim 13 , wherein after forming the first dielectric layer on the plurality of conductive layers, the first dielectric layer extends from the plurality of sidewalls of the plurality of conductive layers to an upper surface of the second dielectric layer. The method according to claim 11 , wherein the plurality of holes of each of the plurality of conductive layers are arranged along a first direction. 16 . The method according to claim 15 , wherein the plurality of holes of each of the plurality of conductive layers are further arranged along a second direction different from the first direction.
17. The method of claim 11, wherein the plurality of conductive layers are arranged in a two-dimensional array.
18. The method according to claim 11, wherein the plurality of holes of each of the plurality of conductive layers comprises a plurality of first holes and a plurality of second holes, the plurality of first holes are arranged along the first direction and a second direction different from the first direction, and one of the plurality of second holes is between four of the plurality of first holes, and the center of one of the plurality of second holes is aligned with the center of a line connecting the centers of two adjacent plurality of first holes. The method of claim 11 , wherein one of the plurality of holes is a concave quadrilateral.
20. The method of claim 11, wherein one of the plurality of holes comprises two circular holes connected by a rectangular hole.