Image sensor including spectral filter and electronic device including the same

Abstract

An image sensor including a spectral filter and an electronic device are provided. The image sensor includes a sensor substrate including a plurality of pixels configured to sense light, and a spectral filter configured to separate incident light into at least four different wavelength bands, and provide the separated incident light to the plurality of pixels. The spectral filter includes a routing filter array including a plurality of nanostructures configured to color-separate incident light into at least three different wavelength bands and converge light onto the plurality of pixels, and a spectral filter array between the sensor substrate and the routing filter array, the routing filter array including a plurality of nanostructures configured to color-separate incident light into at least three different wavelength bands and converge light onto the plurality of pixels. And a plurality of unit filters having different transmission spectra, the plurality of unit filters respectively corresponding to the plurality of pixels.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0157693 filed in the Korean Intellectual Property Office on November 14, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates generally to an image sensor, and more particularly, to an image sensor including a spectral filter and an electronic device. Background Art

[0004] The associated image sensor can classify the incident light into one of three bands (e.g., red (R), green (G), and blue (G) bands). However, using an image sensor provided with a spectral filter that can divide the bands into more parts, improvements in color reproduction accuracy and / or object recognition performance can potentially be achieved. For example, the spectral filter can be used in a dedicated camera, which includes but is not limited to optical device components that can have a relatively large volume and / or relatively high complexity. Alternatively or additionally, a modular technology for an image sensor including a spectral filter integrated on a semiconductor chip may be desired.

[0005] Therefore, since the need for improved color reproduction accuracy and object recognition may be limited by relatively large size and / or relatively high complexity, further improvements in image sensor technology are needed. This article proposes improvements. These improvements may also be applicable to other imaging technologies. Summary of the invention

[0006] One or more example embodiments of the present disclosure provide an image sensor including a spectral filter.

[0007] Furthermore, one or more example embodiments of the present disclosure provide an electronic device including an image sensor.

[0008] According to one aspect of the present disclosure, an image sensor includes a sensor substrate and a spectral filter, wherein the sensor substrate includes a plurality of pixels configured to sense light, and the spectral filter is configured to separate incident light into at least four different bands and provide the separated incident light to the plurality of pixels. The spectral filter includes a routing filter array and a spectral filter array, wherein the routing filter array includes a plurality of nanostructures configured to separate the color of incident light into at least three different bands and focus the separated incident light onto the plurality of pixels, and the spectral filter array is between the sensor substrate and the routing filter array, and includes a plurality of unit filters having different transmission spectra, and the plurality of unit filters respectively correspond to the plurality of pixels.

[0009] In some embodiments, the routing filter array may include a first element region, a second element region, a third element region, and a fourth element region. Each of the first element region, the second element region, the third element region, and the fourth element region may correspond to one of a plurality of pixels and to one of a plurality of unit filters. A plurality of nanostructures may be disposed in each of the first element region, the second element region, the third element region, and the fourth element region. A plurality of nanostructures may also be configured to change the phase of incident light.

[0010] In some embodiments, multiple nanostructures can also be configured to: converge a first light in the incident light onto a first pixel corresponding to the first meta-region and the fourth meta-region, the first light having a first wavelength band, and the incident light is incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; converge a second light in the incident light onto a second pixel corresponding to the second meta-region, the second light having a second wavelength band; and converge a third light in the incident light onto a third pixel corresponding to the third meta-region, the third light having a third wavelength band.

[0011] In some embodiments, multiple nanostructures can also be configured to: converge a first light in the incident light onto a first pixel corresponding to a first meta-region, the first light having a first wavelength band, and the incident light is incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; converge a second light in the incident light onto a second pixel corresponding to the second meta-region, the second light having a second wavelength band; converge a third light in the incident light onto a third pixel corresponding to the third meta-region, the third light having a third wavelength band; and converge a fourth light in the incident light onto a fourth pixel corresponding to the fourth meta-region, the fourth light having a fourth wavelength band.

[0012] In some embodiments, the routing filter array may further include a first element region, a second element region, a third element region, and a fourth element region. Each of the first element region, the second element region, the third element region, and the fourth element region corresponds to four pixels arranged in a 2×2 array among a plurality of pixels, and corresponds to four unit filters arranged in a 2×2 array among a plurality of unit filters. A plurality of nanostructures may be disposed in each of the first element region, the second element region, the third element region, and the fourth element region. A plurality of nanostructures may also be configured to change the phase of the incident light.

[0013] In some embodiments, multiple nanostructures can also be configured to: converge the first light in the incident light onto four first pixels corresponding to the first meta-region and the fourth meta-region respectively, the first light has a first wavelength band, and the incident light is incident on the first meta-region, the second meta-region, the third meta-region and the fourth meta-region; converge the second light in the incident light onto four second pixels corresponding to the second meta-region, the second light has a second wavelength band; and converge the third light in the incident light onto four third pixels corresponding to the third meta-region, the third light has a third wavelength band.

[0014] In some embodiments, multiple nanostructures can also be configured to: converge the first light in the incident light onto four first pixels corresponding to the first meta-region, the first light has a first wavelength band, and the incident light is incident on the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region; converge the second light in the incident light onto four second pixels corresponding to the second meta-region, the second light has a second wavelength band; converge the third light in the incident light onto four third pixels corresponding to the third meta-region, the third light has a third wavelength band; and converge the fourth light in the incident light onto four fourth pixels corresponding to the fourth meta-region, the fourth light has a fourth wavelength band.

[0015] In some embodiments, each of the plurality of unit filters may include a first reflector, a second reflector above the first reflector, and a cavity between the first reflector and the second reflector. Each of the plurality of unit filters may have a transmission spectrum including at least two different transmission peak wavelengths.

[0016] In some embodiments, the plurality of cavities of the plurality of unit filters may have the same thickness.

[0017] In some embodiments, the cavity may include a cavity lower layer and a cavity upper layer, wherein the cavity lower layer has a lower dielectric pattern formed by a first dielectric material having a first refractive index and a second dielectric material having a second refractive index greater than the first refractive index, and the cavity upper layer has an upper dielectric pattern formed by a third dielectric material having a third refractive index and a fourth dielectric material having a fourth refractive index greater than the third refractive index.

[0018] In some embodiments, a first effective refractive index of the cavity lower layer may be determined based on a first volume ratio of a first volume occupied by a first dielectric material to a second volume occupied by a second dielectric material in the cavity lower layer. A second effective refractive index of the cavity upper layer may be determined based on a second volume ratio of a third volume occupied by a third dielectric material to a fourth volume occupied by a fourth dielectric material in the cavity upper layer. The effective refractive index and thickness of the cavity lower layer and the cavity upper layer are determined in each of the plurality of unit filters so that each of the plurality of unit filters has a transmission spectrum including at least two different peak wavelengths.

[0019] In some embodiments, two or more of the plurality of cavities in the plurality of unit filters may have the same lower dielectric pattern and the same upper dielectric pattern.

[0020] In some embodiments, multiple spectral channels can be formed by combining multiple unit filters of the routing filter array and the spectral filter array. The number of cavities of the multiple cavities with different lower dielectric patterns or different upper dielectric patterns in the spectral filter array is less than the number of spectral channels.

[0021] In some embodiments, based on the image sensor having N spectral channels and the routing filter array separating and converging incident light of A bands, the number N' of cavities having different lower dielectric patterns or different upper dielectric patterns satisfies the condition Wherein, N and A are positive integers greater than or equal to four.

[0022] In some embodiments, the cavity may further include a dielectric separation layer between the cavity lower layer and the cavity upper layer. The refractive index of the dielectric separation layer may be less than or equal to the second refractive index or the fourth refractive index.

[0023] In some embodiments, the dielectric separation layer includes hafnium oxide (HfO 2 ) or titanium oxide (TiO 2 ) at least one of.

[0024] In some embodiments, the dielectric separation layer may have a thickness of about 10 nm to about 100 nm.

[0025] In some embodiments, the bandwidth of the transmission spectrum of the routing filter array may be greater than the bandwidth of the transmission spectrum of each of the plurality of unit filters in the spectral filter array.

[0026] In some embodiments, the spectral filter may further include a spacer layer between the spectral filter array and the routing filter array. The refractive index of the spacer layer may be smaller than the refractive index of the plurality of nanostructures.

[0027] According to one aspect of the present disclosure, an electronic device includes a lens assembly configured to form an optical image of an object, an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal, and a processor configured to process the signal generated by the image sensor. The image sensor includes a sensor substrate and a spectral filter, the sensor substrate includes a plurality of pixels configured to sense light, the spectral filter is configured to separate incident light into at least four different bands, and provide the separated incident light to a plurality of pixels. The spectral filter includes a routing filter array and a spectral filter array, the routing filter array includes a plurality of nanostructures configured to separate the color of the incident light into at least three different bands and converge the separated incident light onto a plurality of pixels, the spectral filter array is between the sensor substrate and the routing filter array, and includes a plurality of unit filters with different transmission spectra, and the plurality of unit filters correspond to a plurality of pixels, respectively.

[0028] Additional aspects may be set forth in part in the description which follows and, in part, may be apparent from the description, and / or may be learned by practice of the presented embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features and advantages of certain embodiments of the present disclosure may be more clearly understood from the following description in conjunction with the accompanying drawings, in which:

[0030] Figure 1 is a schematic block diagram of an image sensor according to an embodiment;

[0031] Figure 2 is a cross-sectional view schematically showing a structure of a pixel array in an image sensor according to an embodiment;

[0032] Figure 3 is a diagram showing a Figure 2 A plan view of the arrangement of multiple areas in the routing filter array shown in;

[0033] Figure 4 is a diagram showing an example of a plurality of nanostructures arranged in a plurality of element regions of a routing filter array according to an embodiment;

[0034] Figure 5 is a diagram showing a through Figure 4 An example of a phase profile of green and blue light for a routing filter array including a plurality of nanostructures as shown in FIG.

[0035] Figure 6 is a diagram showing a through Figure 4 An example of a phase profile of red and green light for a routing filter array including a plurality of nanostructures as shown in FIG.

[0036] Figure 7 is a diagram showing an example of an array of green light concentrating areas formed by a routing filter array according to an embodiment;

[0037] Figure 8 is a diagram showing an example of an array of blue light concentrating areas formed by a routing filter array according to an embodiment;

[0038] Fig. 9 is a diagram showing an example of an array of red light concentrating areas formed by a routing filter array according to an embodiment;

[0039] Fig.10 is a diagram showing a Figure 2 A plan view of an example of an arrangement of a plurality of unit filters in a spectral filter array shown in FIG.

[0040] Fig.11 is a cross-sectional view showing an example of a cross-sectional structure of a unit filter in a spectral filter array according to an embodiment;

[0041] FIG. 12A to FIG. 12D It is shown that the embodiment can be applied to Fig.11 A plan view of an example of a lower dielectric pattern of a lower layer of a cavity shown in ;

[0042] Fig.13A and Fig. 13B It is shown that the embodiment can be applied to Fig.11 A plan view of an example of a lower dielectric pattern of a lower layer of a cavity shown in ;

[0043] Fig.14 is a diagram showing a Fig.11 A graph of simulation results of an example transmission spectrum of the unit cell filter shown in;

[0044] Fig.15 is a cross-sectional view schematically showing a structure of a pixel array in an image sensor according to an embodiment;

[0045] Fig.16A and Fig. 16B is a diagram showing a Fig.15 A graph of simulation results of an example transmission spectrum of the unit cell filter shown in;

[0046] Fig.17A and Fig. 17B is a diagram showing a Fig.15 A graph of simulation results of an example transmission spectrum of the unit cell filter shown in;

[0047] Fig.18is a cross-sectional view schematically showing a structure of a pixel array in an image sensor according to an embodiment;

[0048] Fig.19 is a diagram showing a Fig.18 A plan view of an example of a configuration in a routing filter array as shown in;

[0049] Fig. 20 is a plan view showing an example of different dielectric patterns respectively arranged in a plurality of unit filters of a spectrum filter array according to an embodiment;

[0050] Fig.21 is a cross-sectional view schematically showing a structure of a pixel array in an image sensor according to an embodiment;

[0051] Fig. 22 is a graph showing a difference in light utilization efficiency between an image sensor using a routing filter array according to an embodiment and an image sensor using a general red-green-blue (RGB) filter array;

[0052] Fig.23 is a block diagram of an electronic device including an image sensor according to an embodiment;

[0053] Fig.24 is a schematic diagram showing a Fig.23 Block diagram of the camera module;

[0054] Fig.25 is a block diagram of an electronic device including a multi-camera module according to an embodiment; and

[0055] Fig.26 According to the embodiment Fig.25 Detailed block diagram of a multi-camera module in an electronic device. DETAILED DESCRIPTION

[0056] With reference to an embodiment, an example of an embodiment is shown in the accompanying drawings, wherein similar reference numerals throughout the accompanying drawings represent similar elements. In this regard, the embodiments presented may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only with reference to the accompanying drawings to explain various aspects. As used herein, the term "and / or" includes any and all combinations of one or more items in the items listed in association. Statements such as "at least one of..." modify the entire list of elements when after the list of elements, rather than modifying the individual elements in the list. That is, as used herein, each phrase such as "A or B," "at least one of A and B," "at least one of A or B," "A, B or C," "at least one of A, B and C," and "at least one of A, B or C" may include any one or all possible combinations of the items listed together in the corresponding phrase.

[0057] In the following, an image sensor including a spectral filter and an electronic device including the image sensor are described with reference to the accompanying drawings. The embodiments of the present disclosure can be modified in various ways and can be embodied in many different forms. In the accompanying drawings, the size of the components in the drawings may be exaggerated for ease of illustration.

[0058] When a layer, film, region, or panel is referred to as being "on" another element, it may be directly on / below / left / right of another layer or substrate, or there may be an intermediate layer. In addition, when an element or layer is referred to as "covering" another element or layer, the element or layer may cover at least a portion of the other element or layer, wherein the portion may include a portion of the other element, or may include the entirety of the other element. Similarly, when an element or layer is referred to as "penetrating" another element or layer, the element or layer may penetrate at least a portion of the other element or layer, wherein the portion may include a portion of the other element, or may include the entire size (e.g., length, width, depth) of the other element.

[0059] It will be understood that although the terms "first", "second", etc. can be used to describe various components, these components should not be limited by these terms. These terms are only used to distinguish components from each other. These terms do not limit the materials or structures of the components to be different from each other.

[0060] Expressions in the singular include plural expressions unless clearly different meanings are given in the context. It will also be understood that, unless otherwise indicated in the context, when a part is said to “include” another component, the part may not exclude the other component but may also include the other component.

[0061] In addition, terms such as “unit”, “module” and the like provided herein may indicate a unit that performs a function or an operation and may be implemented by hardware, software, or a combination of hardware and software.

[0062] The use of the term "above" and similar indicative terms may correspond to both the singular and the plural.

[0063] In addition, the steps of all methods described herein can be performed in any appropriate order, unless otherwise indicated herein or the context clearly indicates otherwise. In addition, the use of all exemplary terms (e.g., etc.) is only to describe the technical spirit in detail, and the scope of rights is not limited by these terms unless the context is limited by the claims.

[0064] Throughout this disclosure, references to "one embodiment," "an embodiment," "an example embodiment," or similar language may indicate that a particular feature, structure, or characteristic described in conjunction with the indicated embodiment is included in at least one embodiment of the present solution. Thus, the phrases "in one embodiment," "in an embodiment," "in an example embodiment," and similar language throughout this disclosure may, but do not necessarily, all refer to the same embodiment. The embodiments described herein are example embodiments, and therefore, the disclosure is not limited thereto, and may be implemented in various other forms.

[0065] The embodiments herein may be described and illustrated in terms of blocks that perform one or more functions described as shown in the accompanying drawings. These blocks (which may be referred to herein as units or modules, etc., or named as devices, logic, circuits, controllers, counters, comparators, generators, converters, etc.) may be physically implemented by analog and / or digital circuits including one or more of logic gates, integrated circuits, microprocessors, microcontrollers, storage circuits, passive electronic components, active electronic components, optical components, etc.

[0066] In this disclosure, the articles "a" and "an" are intended to include one or more items and may be used interchangeably with "one or more." In the case of only one item, the term "a" or similar language is used. For example, the term "a processor" may refer to a single processor or multiple processors. When a processor is described as performing an operation, and the processor is referred to as performing an additional operation, the multiple operations may be performed by the single processor, or any one or combination of the multiple processors.

[0067] As used herein, “Al 2 O 3 ”, “GaAs”, “GaN”, “GaP”, “Si 3 N 4 ”, “SiC”, “SiO2 ”, “TiN”, “TiO 2 ”, “ZnS”, “ZnSe” and the like may refer to materials composed of elements included in each term rather than a chemical formula expressing a stoichiometric relationship.

[0068] Hereinafter, various embodiments of the present disclosure are described with reference to the accompanying drawings.

[0069] Figure 1 1 is a schematic block diagram of an image sensor 1000 according to an embodiment. Figure 1 , the image sensor 1000 may include a pixel array 1100, a timing controller (T / C) 1010, a row decoder 1020, and an output circuit 1030. The image sensor 1000 may be and / or may include a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.

[0070] The pixel array 1100 may include pixels that may be arranged in a plurality of rows and columns in a two-dimensional (2D) manner. The row decoder 1020 may select a row in the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 may output a photosensitive signal from a plurality of pixels arranged in the selected row in units of columns. To this end, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include a plurality of ADCs arranged in columns between the column decoder and the pixel array 1100, or an ADC arranged at the output end of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as one chip, or in separate chips. At least one processor for processing an image signal output from the output circuit 1030 may be implemented as one chip with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0071] Figure 2 1 is a cross-sectional view schematically showing a pixel array 1100 of an image sensor 1000 according to an embodiment. Figure 2 , the pixel array 1100 may include a sensor substrate 100 , and a spectral filter 400 arranged to face an upper surface (or a light incident surface) of the sensor substrate 100 .

[0072] The sensor substrate 100 may include a plurality of pixels for sensing incident light. For example, the sensor substrate 100 may include a first pixel 101, a second pixel 102, a third pixel 103, and a fourth pixel 104 that may convert incident light into an electrical signal and may generate an image signal. Figure 2In the cross-sectional view of FIG. 1 , only the first pixel 101, the second pixel 102, the third pixel 103, and the fourth pixel 104 are shown, but the sensor substrate 100 may include a plurality of pixels arranged in a two-dimensional array in a first direction (X direction) and a second direction (Y direction). That is, the present disclosure is not limited in this regard, and the sensor substrate 100 may include more than four (4) (e.g., >4) pixels or less than four (4) (e.g., <4) pixels.

[0073] The spectral filter 400 may be configured to separate incident light into at least four (4) different wavelength bands, and provide the four (4) different wavelength bands of light to a plurality of pixels of the sensor substrate 100, respectively. As a result, the image sensor 1000 may include at least four (4) different spectral channels. For example, the spectral filter 400 may be configured to provide light of a first spectral channel λ1 in the incident light to a first pixel 101, provide light of a second spectral channel λ2 different from the first spectral channel λ1 to a second pixel 102, provide light of a third spectral channel λ3 different from the first spectral channel λ1 and the second spectral channel λ2 to a third pixel 103, and provide light of a fourth spectral channel λ4 different from the first spectral channel λ1 to the third spectral channel λ3 to a fourth pixel 104.

[0074] The spectral filter 400 may include a spectral filter array 200 and a routing filter array 300. The spectral filter array 200 may be arranged to face the upper surface (or light incident surface) of the sensor substrate 100 in the third direction (Z direction). The routing filter array 300 may be arranged to face the upper surface of the spectral filter array 200 in the third direction. The spectral filter array 200 may be arranged between the sensor substrate 100 and the routing filter array 300. Therefore, incident light incident on the pixel array 1100 of the image sensor 1000 may pass through the routing filter array 300, and may then reach the sensor substrate 100 via the spectral filter array 200.

[0075] The spectral filter array 200 may include a plurality of unit filters (e.g., a first unit filter 211, a second unit filter 212, a third unit filter 213, and a fourth unit filter 214), which may have different transmission spectra and may correspond to a plurality of pixels in a one-to-one correspondence. For example, the first unit filter 211 may correspond to the first pixel 101 and may face the first pixel 101 in a third direction; the second unit filter 212 may correspond to the second pixel 102 and may face the second pixel 102 in the third direction; the third unit filter 213 may correspond to the third pixel 103 and may face the third pixel 103 in the third direction; and the fourth unit filter 214 may correspond to the fourth pixel 104 and may face the fourth pixel 104 in the third direction. Figure 2 In the cross-sectional view of FIG. 2 , only the first unit filter 211, the second unit filter 212, the third unit filter 213 and the fourth unit filter 214 are shown, however, the present disclosure is not limited in this regard. That is, the spectral filter array 200 may include a plurality of unit filters that may be arranged in a 2D array in the first direction and the second direction.

[0076] The routing filter array 300 can separate the incident light color into at least three (3) different bands, each of which can be relatively wide compared to the first unit filter 211 to the fourth unit filter 214 of the spectral filter array 200. For example, the routing filter array 300 can separate the light of the first band (e.g., green light), the light of the second band (e.g., blue light), and the light of the third band (e.g., red light) from the incident light, and make the light of different bands travel along different paths. Alternatively or additionally, the routing filter array 300 can separate the light of the first band (e.g., green light), the light of the second band (e.g., blue light), the light of the third band (e.g., red light), and the light of the fourth band (e.g., infrared light) from the incident light, and make the light of different bands travel along different paths. Various spectral channels can be formed by the combination of the routing filter array 300 and the spectral filter array 200. For example, sixteen (16) or more spectral channels can be formed by the combination of the routing filter array 300 and the spectral filter array 200. However, the present disclosure is not limited in this regard, and other numbers of spectral channels may be formed through a combination of the routing filter array 300 and the spectral filter array 200 .

[0077] The routing filter array 300 may be configured to be used as a lens for converging color-separated light. In an embodiment, the routing filter array 300 may include a plurality of nanostructures NP that may be regularly arranged according to a certain rule. Alternatively or additionally, the routing filter array 300 may also include a dielectric filler DF filled between the plurality of nanostructures NP. In the routing filter array 300, the number, cross-sectional size, and / or arrangement type of the plurality of nanostructures NP may vary according to a plurality of regions that may be regularly arranged. That is, the routing filter array 300 may include a plurality of element regions (e.g., a first element region R1 and a second element region R2) in which the number, cross-sectional size, or arrangement type of the plurality of nanostructures NP may be different. For example, in the light incident on the routing filter array 300, the light of the first wavelength incident on the first light converging region LC1 and the light of the second wavelength incident on the second light converging region LC2 may be separated and / or converged on different pixels. The plurality of nanostructures NP in the routing filter array 300 may be formed differently so that the routing filter array 300 may perform the above functions.

[0078] Figure 3 It shows Figure 2 FIG. 3 is a plan view of the arrangement of multiple regions in the routing filter array 300 shown in FIG. Figure 3 , the routing filter array 300 may include a first element region R1, a second element region R2, a third element region R3, and a fourth element region R4 that may be arranged in two dimensions (2D). Each of the first element region R1, the second element region R2, the third element region R3, and the fourth element region R4 may correspond to one of the plurality of pixels in the sensor substrate 100 and one of the plurality of unit filters in the spectral filter array 200. Alternatively or additionally, each of the first element region R1, the second element region R2, the third element region R3, and the fourth element region R4 may be arranged to face the corresponding pixel and the corresponding unit filter in a third direction.

[0079] The first element region R1, the second element region R2, the third element region R3, and the fourth element region R4 arranged in a 2×2 array may form a unit pattern. The first element region R1, the second element region R2, the third element region R3, and the fourth element region R4 may be arranged on quadrant regions of a unit pattern, respectively. For example, the first element region R1 and the second element region R2 may be arranged adjacent to each other in the first direction, the third element region R3 and the fourth element region R4 may be arranged adjacent to each other in the first direction, the first element region R1 and the third element region R3 may be arranged adjacent to each other in the second direction, and the second element region R2 and the fourth element region R4 may be arranged adjacent to each other in the second direction. Alternatively or additionally, the first element region R1 and the fourth element region R4 may be arranged along the diagonal direction of the unit pattern, and the second element region R2 and the third element region R3 may be arranged along another diagonal direction of the unit pattern.

[0080] The routing filter array 300 may include a plurality of unit patterns. Each of the plurality of unit patterns may include a first element region R1, a second element region R2, a third element region R3, and a fourth element region R4. For example, a plurality of first element regions R1 and a plurality of second element regions R2 may be alternately arranged along a first direction, and a plurality of third element regions R3 and a plurality of fourth element regions R4 may be alternately arranged along the first direction in another cross section at a different position in a second direction, and the second direction may be perpendicular to the first direction. That is, the routing filter array 300 may include a plurality of unit patterns, and the plurality of unit patterns may be arranged two-dimensionally and regularly along the first direction and the second direction.

[0081] The routing filter array 300 may include a plurality of nanostructures NP that may be two-dimensionally arranged in each of the first to fourth element regions R1 to R4 in order to color separate and converge incident light. Figure 4 An example of multiple nanostructure NPs arranged in multiple first element regions R1 to multiple fourth element regions R4 of the routing filter array 300 is shown. Multiple nanostructure NPs can be arranged so that the phase of light transmitted through the routing filter array 300 can change according to the position on the routing filter array 300. The phase profile of the transmitted light (which can be achieved by the routing filter array 300) can be determined according to the number of multiple nanostructure NPs, cross-sectional dimensions (e.g., width and / or diameter), cross-sectional shape, height of each nanostructure NP, arrangement period (or spacing), and arrangement type. Alternatively or additionally, the behavior of light passing through the routing filter array 300 can be determined according to the phase profile of the transmitted light. For example, multiple nanostructure NPs can be arranged to form such a phase profile that allows the light that has been transmitted through the routing filter array 300 to be separated and converged according to wavelength.

[0082] The nanostructure NPs may each have a size that may be smaller than the wavelength of visible light. The nanostructure NPs may have a size that may be smaller than, for example, a blue wavelength. For example, the cross-sectional width (and / or diameter) of the nanostructure NPs may be less than 400 nanometers (nm), 300nm, and / or 200nm. The height of the nanostructure NPs may be from about 500nm to about 1500nm, and / or may be greater than the cross-sectional width of the nanostructure NPs.

[0083] The nanostructure NP may include a material having a relatively high refractive index compared to the surrounding material and a relatively low absorptivity in the visible light band. For example, the nanostructure NP may include c-Si, p-Si, a-Si, III-V compound semiconductors (e.g., GaP, GaN, GaAs, etc.), SiC, TiO 2 、Si 3 N 4 , ZnS, ZnSe and / or a combination thereof. The periphery of the nanostructure NP may be filled with a dielectric filler DF, which has a relatively lower refractive index than the nanostructure NP and may have a relatively lower absorptivity in the visible light band. For example, the dielectric filler DF may include siloxane-based spin-on glass (SOG), SiO 2 、Si 3 N 4 、Al 2 O 3 , air, etc.

[0084] The refractive index of the nanostructure NP relative to light of about 630 nm wavelength may be greater than or equal to about 2.0, and the refractive index of the dielectric filler DF relative to light of about 630 nm wavelength may be about 1.0 to about 2.0 or less. In an embodiment, the difference between the refractive index of the nanostructure NP and the refractive index of the dielectric filler DF may be greater than or equal to about 0.5. There is a difference between the refractive index of the nanostructure NP and the refractive index of the peripheral material, which may change the phase of light passing through the nanostructure NP. The phase change may be caused by a phase delay, which may occur due to the sub-wavelength shape size of the nanostructure NP, and the degree of the phase delay may be determined by the specific shape size and arrangement shape of the nanostructure NP.

[0085] exist Figure 4In the example of, each of the first meta region R1, the second meta region R2, the third meta region R3, and the fourth meta region R4 may include a plurality of nanostructures NP. In the first meta region R1, the second meta region R2, the third meta region R3, and the fourth meta region R4, the cross-sectional size and arrangement type of the plurality of nanostructures NP may be different. Alternatively or additionally, the number of the plurality of nanostructures NP in each of the first meta region R1, the second meta region R2, the third meta region R3, and the fourth meta region R4 may be different from the number of the plurality of nanostructures NP in the other meta regions. Figure 4 The number, cross-sectional size, cross-sectional shape and arrangement type of the multiple nanostructures NP shown in are examples, and the first meta-region R1, the second meta-region R2, the third meta-region R3 and the fourth meta-region R4 may each include multiple nanostructures NP having various numbers, cross-sectional sizes, cross-sectional shapes and arrangement types.

[0086] Figure 5 It shows that the Figure 4 FIG. 3 is a diagram showing an example of phase profiles of green light and blue light of a routing filter array 300 including a plurality of nanostructures NPs. Figure 5 , the green light having passed through the routing filter array 300 may have a first green light phase profile PPG1, which may be maximum at the center of the first element region R1, and may decrease as it moves away from the center of the first element region R1. For example, at a position immediately after passing through the routing filter array 300, that is, on the lower surface of the routing filter array 300, the phase of the green light may be maximum at the center of the first element region R1, and may decrease in concentric circles as it moves away from the center of the first element region R1.

[0087] As another example, the blue light that has passed through the routing filter array 300 may have a blue light phase profile PPB, which may be maximum at the center of the second element region R2 and may decrease as it moves away from the center of the second element region R2. For example, at a position immediately after passing through the routing filter array 300, that is, on the lower surface of the routing filter array 300, the phase of the blue light may be maximum at the center of the second element region R2 and may decrease in concentric circles as it moves away from the center of the second element region R2.

[0088] In an embodiment, among the incident light incident on the first element region R1 and the incident light incident on a portion of the second element region R2 and a portion of the third element region R3 around the first element region R1, green light may be converged onto the pixel corresponding to the first element region R1 through the routing filter array 300. Alternatively or additionally, among the incident light incident on the second element region R2 and the incident light incident on a portion of the first element region R1, a portion of the third element region R3, and a portion of the fourth element region R4 around the second element region R2, blue light may be converged onto the pixel corresponding to the second element region R2 through the routing filter array 300.

[0089] Figure 6 It shows that the Figure 4 FIG. 3 is a diagram showing an example of a phase profile of red light and green light of a routing filter array 300 including a plurality of nanostructures NPs. Figure 6 , the red light that has passed through the routing filter array 300 may have a red light phase profile PPR, which may be maximum at the center of the third element region R3 and may decrease as it moves away from the center of the third element region R3. For example, at a position immediately after passing through the routing filter array 300, that is, on the lower surface of the routing filter array 300, the phase of the red light may be maximum at the center of the third element region R3 and may decrease in concentric circles as it moves away from the center of the third element region R3.

[0090] In an embodiment, the green light having passed through the routing filter array 300 may have a second green light phase profile PPG2, which may be maximum at the center of the fourth element region R4 and may decrease as it moves away from the center of the fourth element region R4. In addition to the second green light phase profile PPG2 having a maximum phase at the center of the fourth element region R4, the description with reference to the first green light phase profile PPG1 may also be applied to the second green light phase profile PPG2.

[0091] In an embodiment, among the incident light incident on the third element region R3 and the incident light incident on a portion of the first element region R1, a portion of the second element region R2, and a portion of the fourth element region R4 around the third element region R3, red light may be converged onto the pixel corresponding to the third element region R3 through the routing filter array 300. Alternatively or additionally, among the incident light incident on the fourth element region R4 and the incident light incident on a portion of the second element region R2 and a portion of the third element region R3 around the fourth element region R4, green light may be converged onto the pixel corresponding to the fourth element region R4 through the routing filter array 300.

[0092] Therefore, the routing filter array 300 can focus green light in the incident light onto pixels corresponding to the first element region R1 and the fourth element region R4, focus blue light onto pixels corresponding to the second element region R2, and focus red light onto pixels corresponding to the third element region R3. That is, the incident light can be separated by the routing filter array 300 according to wavelength without substantial loss, and / or can be focused onto pixels.

[0093] Figure 7 3 is a diagram showing an example of an array in a green light concentrating area formed by the routing filter array 300. Figure 7 , referenced above Figure 5 and Figure 6 The described phase profile of green light can focus the green light on the pixels corresponding to the first element region R1 and the fourth element region R4, wherein the green light has passed through the green light focusing region GL obtained by connecting the centers of the two second element regions R2 and the centers of the two third element regions R3, wherein the two second element regions R2 and the two third element regions R3 can be adjacent to the first element region R1 and the fourth element region R4 while contacting their sides. Therefore, as Figure 7 As shown in , the routing filter array 300 can operate as an array of green light focusing areas GL, which focus green light on pixels corresponding to the first element area R1 and the fourth element area R4. The green light focusing area GL may have an area that may be larger than the corresponding pixel, for example, 1.2 to 2 times the area of ​​the corresponding pixel. However, the present disclosure is not limited in this regard.

[0094] Figure 8 3 is a schematic diagram showing an example of an array of blue light concentrating areas formed by the routing filter array 300. Figure 8 , according to reference Figure 5 According to the phase profile of blue light described above, blue light that has passed through the blue light converging area BL obtained by connecting the centers of four third element areas R3 that may be adjacent to the second element area R2 at the vertices of the second element area R2 may be converged onto the pixel corresponding to the second element area R2. Figure 8 As shown in , the routing filter array 300 can operate as an array of blue light concentrating areas BL, which concentrate blue light onto pixels corresponding to the second element region R2. The blue light concentrating area BL may have an area greater than the corresponding pixel, for example, 1.5 to 4 times the area of ​​the corresponding pixel. However, the present disclosure is not limited in this regard. The blue light concentrating area BL may partially overlap with a portion of the green light concentrating area GL and a portion of the red light concentrating area RL to be described later.

[0095] Fig. 93 is a diagram showing an example of an array in a red light concentrating region RL formed by the routing filter array 300. Fig. 9 , according to reference Figure 6 The red light having passed through the red light converging area RL obtained by connecting the centers of the four second element areas R2 adjacent to the third element area R3 at the vertices of the third element area R3 may be converged onto the pixel corresponding to the third element area R3. Fig. 9 As shown in , the routing filter array 300 can operate as an array of red light concentrating regions RL, which concentrate red light onto pixels corresponding to the third element region R3. The red light concentrating region RL may have an area greater than the corresponding pixel, for example, 1.5 to 4 times the area of ​​the corresponding pixel. However, the present disclosure is not limited in this regard. The red light concentrating region RL may partially overlap with a portion of the green light concentrating region GL and a portion of the blue light concentrating region BL.

[0096] As reference Figures 5 to 9 As described, the routing filter array 300 can separate and converge green light, blue light and red light from the incident light. However, the present disclosure is not limited thereto. For example, according to the number, cross-sectional size, cross-sectional shape and arrangement type of multiple nanostructures NP arranged in the first meta region R1, the second meta region R2, the third meta region R3 and the fourth meta region R4, the routing filter array 300 can separate and converge green light, blue light, red light and infrared light from the incident light. That is, the routing filter array 300 can converge green light from the incident light onto the pixel corresponding to the first meta region R1, converge blue light onto the pixel corresponding to the second meta region R2, converge red light onto the pixel corresponding to the third meta region R3, and converge infrared light onto the pixel corresponding to the fourth meta region R4.

[0097] The light of different color bands separated by the routing filter array 300 can be separated into light of narrower wavelength bands by the unit filters of the spectral filter array 200 and then incident on the sensor substrate 100. Return to Reference Figure 2 , the first unit filter 211 and the third unit filter 213 of the spectral filter array 200 may correspond to the first element region R1 of the routing filter array 300, and the second unit filter 212 and the fourth unit filter 214 of the spectral filter array 200 may correspond to the second element region R2 of the routing filter array 300. The first unit filter 211 and the third unit filter 213 may have different transmission spectra, and the second unit filter 212 and the fourth unit filter 214 may have different transmission spectra. Therefore, light with different wavelength bands may be incident on the first pixel 101, the second pixel 102, the third pixel 103, and the fourth pixel 104.

[0098] although Figure 2 Only four (4) unit filters (eg, first to fourth unit filters 211 to 214) are shown, but the present disclosure is not limited thereto. That is, the spectral filter array 200 may include four (4) or more unit filters.

[0099] Fig.10 It shows Figure 2 FIG. 2 is a plan view showing an example of an arrangement of a plurality of unit filters in the spectral filter array 200 shown in FIG. Fig.10 The spectral filter array 200 may include a plurality of unit filters that may be arranged in two dimensions (2D) (e.g., a first unit filter F1, a second unit filter F2, a third unit filter F3, a fourth unit filter F4, a fifth unit filter F5, a sixth unit filter F6, a seventh unit filter F7, an eighth unit filter F8, a ninth unit filter F9, a tenth unit filter F10, an eleventh unit filter F11, a twelfth unit filter F12, a thirteenth unit filter F13, a fourteenth unit filter F14, a fifteenth unit filter F15, and a sixteenth unit filter F16). Fig.10 An example is shown in which the spectral filter array 200 includes a first unit filter F1 to a sixteenth unit filter F16 that can be arranged in a 4×4 array. However, the present disclosure is not limited to this, and the unit filters can be arranged in various other types. For example, the spectral filter array 200 may include nine (9) unit filters arranged in a 3×3 array, and / or include 25 or more unit filters that can be arranged in a 5×5 array or a larger array. The size S of each of the multiple unit filters F1 to F16 can be, for example, about 0.4 microns (μm) to about 100 μm, however, the present disclosure is not limited to this.

[0100] exist Fig.10In the example shown in , the first unit filter F1, the fifth unit filter F5, the ninth unit filter F9 and the thirteenth unit filter F13 can correspond to the first element region R1 of the routing filter array 300, the third unit filter F3, the seventh unit filter F7, the eleventh unit filter F11 and the fifteenth unit filter F15 can correspond to the second element region R2 of the routing filter array 300, the second unit filter F2, the sixth unit filter F6, the tenth unit filter F10 and the fourteenth unit filter F14 can correspond to the third element region R3 of the routing filter array 300, and the fourth unit filter F4, the eighth unit filter F8, the twelfth unit filter F12 and the sixteenth unit filter F16 can correspond to the fourth element region R4 of the routing filter array 300. When the routing filter array 300 separately converges green light, blue light and red light, the first unit filter F1, the fifth unit filter F5, the ninth unit filter F9 and the thirteenth unit filter F13, and the fourth unit filter F4, the eighth unit filter F8, the twelfth unit filter F12 and the sixteenth unit filter F16 can be configured to further separate the green light into narrower bands, the third unit filter F3, the seventh unit filter F7, the eleventh unit filter F11 and the fifteenth unit filter F15 can be configured to further separate the blue light into narrower bands, and the second unit filter F2, the sixth unit filter F6, the tenth unit filter F10 and the fourteenth unit filter F14 can be configured to further separate the red light into narrower bands. Alternatively or additionally, when the routing filter array 300 individually converges green light, blue light, red light and infrared light, the first unit filter F1, the fifth unit filter F5, the ninth unit filter F9 and the thirteenth unit filter F13 can further separate the green light into narrower bands, the third unit filter F3, the seventh unit filter F7, the eleventh unit filter F11 and the fifteenth unit filter F15 can further separate the blue light into narrower bands, the second unit filter F2, the sixth unit filter F6, the tenth unit filter F10 and the fourteenth unit filter F14 can further separate the red light into narrower bands, and the fourth unit filter F4, the eighth unit filter F8, the twelfth unit filter F12 and the sixteenth unit filter F16 can further separate the infrared light into narrower bands.

[0101] Each of the plurality of unit filters F1 to F16 in the spectral filter array 200 may be configured to have peak wavelengths of at least two bands (or at least two transmission peak wavelengths) in a transmission spectrum within a visible light band (e.g., about 400 nm to about 750 nm) and / or an infrared band (e.g., about 750 nm to about 1.4 μm). By combining the routing filter array 300 and the spectral filter array 200, a channel array having, for example, sixteen (16) or more spectral channels may be formed. The image sensor 1000 may sense light having different peak wavelengths through the spectral channels and output an image signal.

[0102] Fig.11 2 is a cross-sectional view showing an example of a cross-sectional structure of a unit filter in the spectral filter array 200 according to the embodiment. Fig.11 , each of the first unit filter 211, the second unit filter 212, the third unit filter 213, and the fourth unit filter 214 may include a first reflector 231 and a second reflector 232 that may be spaced apart from each other. Additionally, the first unit filter 211, the second unit filter 212, the third unit filter 213, and the fourth unit filter 214 may include a first cavity 221, a second cavity 222, a third cavity 223, and a fourth cavity 224 between the first reflector 231 and the second reflector 232, respectively.

[0103] The first reflector 231 and the second reflector 232 may each include a Bragg reflector. The Bragg reflector may include a distributed Bragg reflector (DBR) having a structure in which two or more dielectric materials having different refractive indices may be alternately stacked. Fig.11 An example is shown in which the first reflector 231 includes a Bragg reflector in which two dielectric materials 231 a and 231 b are alternately stacked, and the second reflector 232 includes a Bragg reflector in which two dielectric materials 232 a and 232 b are alternately stacked.

[0104] The first reflector 231 and the second reflector 232 may each include a metal reflector. The metal reflector may include, for example, aluminum (Al), silver (Ag), gold (Au), copper (Cu), titanium (Ti), tungsten (W), titanium nitride (TiN), etc. However, the present disclosure is not limited thereto. In addition, the first reflector 231 and the second reflector 232 may include different material layers. For example, the first reflector 231 may include a Bragg reflector, and the second reflector 232 may include a metal reflector. However, the present disclosure is not limited to the above examples.

[0105] The first cavity 221, the second cavity 222, the third cavity 223 and the fourth cavity 224 may be disposed between the first reflector 231 and the second reflector 232. The first cavity 221 to the fourth cavity 224 may have the same thickness. Each of the first cavity 221 to the fourth cavity 224 may have a transmission spectrum having at least two peak wavelengths (or transmission peak wavelengths) of different transmission bands in the visible light band (e.g., from about 400nm to about 750nm) and / or the infrared band (e.g., from about 750nm to about 1.4μm). In an embodiment, each of the first cavity 221 to the fourth cavity 224 may have a thickness of about 100nm to about 2000nm. For example, the first cavity 221 to the fourth cavity 224 may each have a thickness of about 200nm to about 1000nm.

[0106] The first cavity 221 to the fourth cavity 224 may respectively include a cavity lower layer (e.g., a first cavity lower layer 221', a second cavity lower layer 222', a third cavity lower layer 223', and a fourth cavity lower layer 224') and a cavity upper layer (e.g., a first cavity upper layer 221", a second cavity upper layer 222", a third cavity upper layer 223", and a fourth cavity upper layer 224"). The first cavity 221 to the fourth cavity 224 may further include a dielectric separation layer 225 disposed between the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224". The first cavity 221 may include a first cavity lower layer 221', a dielectric separation layer 225 and a first cavity upper layer 221", the second cavity 222 may include a second cavity lower layer 222', a dielectric separation layer 225 and a second cavity upper layer 222", the third cavity 223 may include a third cavity lower layer 223', a dielectric separation layer 225 and a third cavity upper layer 223", and the fourth cavity 224 may include a fourth cavity lower layer 224', a dielectric separation layer 225 and a fourth cavity upper layer 224".

[0107] The first cavity lower layer 221' to the fourth cavity lower layer 224' may have substantially similar thicknesses and / or the same thickness, and the first cavity upper layer 221" to the fourth cavity upper layer 224" may have substantially similar thicknesses and / or the same thickness. That is, the first cavity 221 to the fourth cavity 224 may have substantially similar thicknesses and / or the same thickness. However, the present disclosure is not limited in this regard, and the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" may have different thicknesses or the same thickness. Fig.11 An example is shown in which the first to fourth cavity upper layers 221 ″ to 224 ″ have a smaller thickness than the first to fourth cavity lower layers 221 ′ to 224 ′, but the present disclosure is not limited thereto.

[0108] According to an embodiment, by adjusting the thickness and the effective refractive index of each of the first to fourth cavity lower layers 221' to 224' and each of the first to fourth cavity upper layers 221" to 224", the first to fourth cavities 221 to 224 can be designed to have peak wavelengths of at least two different bands (or at least two transmission peak wavelengths).

[0109] Each of the first to fourth cavities 221 to 224 may include a specific dielectric pattern. The dielectric pattern of each of the first to fourth cavities 221 to 224 may include a lower dielectric pattern of the first cavity lower layer 221' to the fourth cavity lower layer 224' and an upper dielectric pattern of the first cavity upper layer 221" to the fourth cavity upper layer 224". That is, each of the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" may include one or more dielectric materials.

[0110] For example, each of the first cavity lower layer 221' to the fourth cavity lower layer 224' may include a first dielectric material 226a and a second dielectric material 226b forming a lower dielectric pattern. The second dielectric material 226b may include a material having a second refractive index that may be greater than the first refractive index of the first dielectric material 226a. For example, the first dielectric material 226a may include, but is not limited to, silicon oxide (SiO 2 ), and the second dielectric material 226b may include but is not limited to titanium oxide (TiO 2 ). However, the present disclosure is not limited to these examples.

[0111] Each of the first to fourth cavity lower layers 221 ′ to 224 ′ may have various lower dielectric patterns according to the material, shape, size, and arrangement of the first and second dielectric materials 226 a and 226 b . FIG. 12A to FIG. 12D It shows that it can be applied to Fig.11 2 . An example of the lower dielectric pattern of the first to fourth cavity lower layers 221 ′ to 224 ′ is shown in FIG. Fig.13A and Fig. 13B It shows that it can be applied to Fig.11 Additional examples of lower dielectric patterns of the first to fourth cavity lower layers 221 ′ to 224 ′ are shown in FIG.

[0112] The effective refractive index of the first cavity lower layer 221' to the fourth cavity lower layer 224' may be adjusted by changing the lower dielectric pattern of the first cavity lower layer 221' to the fourth cavity lower layer 224'. That is, the effective refractive index of the first cavity lower layer 221' to the fourth cavity lower layer 224' may be determined according to the volume ratio of the volume occupied by the first dielectric material 226a to the volume occupied by the second dielectric material 226b in each of the first cavity lower layer 221' to the fourth cavity lower layer 224'. For example, as the volume ratio of the second dielectric material 226b increases in the first cavity lower layer 221' to the fourth cavity lower layer 224', the effective refractive index of the cavity lower layers 221' to 224' may increase.

[0113] Each of the first cavity upper layer 221" to the fourth cavity upper layer 224" may include a third dielectric material 227a and a fourth dielectric material 227b forming an upper dielectric pattern. The fourth refractive index of the fourth dielectric material 227b may be greater than the third refractive index of the third dielectric material 227a. That is, the third dielectric material 227a may include silicon oxide (SiO 2 ), and the fourth dielectric material 227b may include titanium oxide (TiO 2 ). However, the present disclosure is not limited to these examples.

[0114] Similar to the first cavity lower layer 221' to the fourth cavity lower layer 224', each of the first cavity upper layer 221" to the fourth cavity upper layer 224" may have various types of upper dielectric patterns according to the material, shape, size, and arrangement of the third dielectric material 227a and the fourth dielectric material 227b. The effective refractive index of the first cavity upper layer 221" to the fourth cavity upper layer 224" may be adjusted by changing the upper dielectric pattern of the first cavity upper layer 221" to the fourth cavity upper layer 224". That is, the effective refractive index of the first cavity upper layer 221" to the fourth cavity upper layer 224" may be determined according to the volume ratio of the volume occupied by the third dielectric material 227a to the volume occupied by the fourth dielectric material 227b in each of the first cavity upper layer 221" to the fourth cavity upper layer 224".

[0115] The lower dielectric pattern and the upper dielectric pattern of the dielectric pattern forming each of the first to fourth cavities 221 to 224 may be the same or different. Fig.11An example is shown in which the lower dielectric pattern and the upper dielectric pattern of the dielectric pattern forming each of the first to fourth cavities 221 to 224 are identical to each other. In such an example, the effective refractive index of each of the first to fourth cavity lower layers 221' to 224' and the first to fourth cavity upper layers 221" to 224" can be adjusted by changing the volume ratio of the second dielectric material 226b and the fourth dielectric material 227b, and accordingly, the peak wavelength (or transmission peak wavelength) of the transmission spectrum of each of the first to fourth cavities 221 to 224 can be adjusted.

[0116] In the above description, an example is described in which each of the first to fourth cavity lower layers 221' to 224' and each of the first to fourth cavity upper layers 221" to 224" include two dielectric materials having different refractive indices. However, the present disclosure is not limited thereto, and the first to fourth cavity lower layers 221' to 224' and the first to fourth cavity upper layers 221" to 224" may each include only one (1) dielectric material, or three (3) or more dielectric materials.

[0117] The dielectric separation layer 225 may be disposed between the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224". The dielectric separation layer 225 may be configured to have a refractive index that may be less than or equal to the maximum refractive index of the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224". That is, the dielectric separation layer 225 may include a material having a refractive index that may be less than or equal to the second refractive index or the fourth refractive index, which may be the maximum refractive index among the refractive indices of the materials included in the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224". For example, the dielectric separation layer 225 may include hafnium oxide (HfO 2 ) or titanium oxide (TiO 2 ), however, the present disclosure is not limited thereto. That is, when the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" include but are not limited to silicon oxide (SiO 2 ) or titanium oxide (TiO 2 ), the dielectric separation layer 225 may include but is not limited to titanium oxide (TiO 2 ) or hafnium oxide (HfO 2 ).

[0118] The dielectric separation layer 225 may be disposed between the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224", and may act as an etching stop layer. Therefore, the manufacturing process of the first cavity 221 to the fourth cavity 224 may be simplified, and the reproducibility may be improved. In addition, the effective refractive index of each of the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" may be effectively adjusted.

[0119] In an etching process for manufacturing a cavity having a relatively large thickness, an etching region may be formed to be inclined due to the large etching thickness, and therefore, it may be difficult to accurately obtain a desired pattern. In an embodiment, the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" included in the first cavity 221 to the fourth cavity 224 may be separated by a dielectric separation layer 225 that may serve as an etching stop layer, and therefore, the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" may be formed by separate etching processes in the process of manufacturing the first cavity 221 to the fourth cavity 224. Therefore, the etching process for forming the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" can be easily performed, reproducibility can be improved, and the effective refractive index of each of the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224" can be effectively adjusted. The dielectric separation layer 225 can be formed to have various thicknesses according to process conditions during the etching process. For example, the dielectric separation layer 225 can have a thickness of about 10nm to about 100nm, however, the present disclosure is not limited thereto.

[0120] In an embodiment, the image sensor 1000 may further include a passivation layer 250 disposed between the spectral filter array 200 and the sensor substrate 100, and / or an etch stop layer 240 disposed between the first reflector 231 and the first to fourth cavity lower layers 221' to 224'. The passivation layer 250 may protect the sensor substrate 100 during a process of providing the spectral filter array 200. The passivation layer 250 may include, for example, hafnium oxide (HfO 2 ), silicon oxide (SiO 2) and at least one of silicon nitride (SiN), however, the present disclosure is not limited thereto. The etch stop layer 240 may facilitate a patterning process for forming the first cavity lower layer 221' to the fourth cavity lower layer 224'. The etch stop layer 240 may include, but is not limited to, a material having an etching speed that may be slower than an etching speed of a dielectric material forming the first cavity lower layer 221' to the fourth cavity lower layer 224' by a factor of two (2) times or more (e.g., five (5) times). The etch stop layer 240 may include, for example, titanium oxide (TiO 2 ) or hafnium oxide (HfO 2 ), however, the present disclosure is not limited thereto.

[0121] Fig.14 Shows the description Fig.11 The simulation results of the example of the transmission spectrum of the first unit filter 211 to the fourth unit filter 214 are shown in FIG. Fig.14 In the embodiment, the first dielectric material 226a and the third dielectric material 227a may include silicon oxide (SiO 2 ), and the second dielectric material 226b and the fourth dielectric material 227b may include titanium oxide (TiO 2 ). The first to fourth cavity lower layers 221' to 224' may be formed to have a thickness of about 230 nm, and the first to fourth cavity upper layers 221" to 224" may be formed to have a thickness of about 210 nm. Fig.14 It shows that when titanium oxide (TiO 2 ) is 0%, 10%, 20%, 25%, 30%, 40% and 50%, respectively, and the transmission spectra of the first cavity 221 to the fourth cavity 224 are shown in FIG. Fig.14 Each of the first to fourth cavities 221 to 224 has a transmission spectrum having peak wavelengths (or transmission peak wavelengths) in two or more different bands, and as titanium oxide (TiO 2 ) increases, the peak wavelengths (or transmission peak wavelengths) of the first to fourth unit filters 211 to 214 move in an increasing direction.

[0122] In the spectral filter 400, according to an embodiment, the routing filter array 300 can separate and converge light of a relatively large band, and each of the first unit filter 211 to the fourth unit filter 214 of the spectral filter array 200 can have a transmission spectrum having at least two peak wavelengths of different bands that can be relatively narrow. That is, the transmission spectrum bandwidth of the routing filter array 300 can be greater than the transmission spectrum bandwidth of each of the first unit filter 211 to the fourth unit filter 214 of the spectral filter array 200. Therefore, the plurality of spectral channels formed by the combination of the routing filter array 300 and the first unit filter 211 to the fourth unit filter 214 of the spectral filter array 200 can have peak wavelengths of different transmission bands. For example, when each of the first to fourth unit filters 211 to 214 has a transmission spectrum including a peak wavelength of a red light band, a peak wavelength of a green light band, or a peak wavelength of a blue light band, and the routing filter array 300 focuses green light on the first unit filter 211, a first spectral channel formed by a combination of the routing filter array 300 and the first unit filter 211 may have a peak wavelength of the green light band. As another example, when the routing filter array 300 focuses blue light on the second unit filter 112, a second spectral channel formed by a combination of the routing filter array 300 and the second unit filter 212 may have a peak wavelength of the blue light band.

[0123] When considering the wavelength bands separated by the routing filter array 300, the unit filters (eg, Fig.10 At least two cavities in the first unit filter F1 to the sixteenth unit filter F16) can be formed to have the same effective refractive index. That is, at least two cavities in the first unit filter F1 to the sixteenth unit filter F16 can be formed to have the same dielectric pattern (for example, a lower dielectric pattern and an upper dielectric pattern). For example, when the routing filter array 300 separates and converges green light, blue light, and red light from the incident light, and the transmission spectrum of each cavity in the spectral filter array 200 has a peak wavelength in the red light band, a peak wavelength in the green light band, and a peak wavelength in the blue light band, the three cavities can have the same dielectric pattern, and the combination of the routing filter array 300 and the three cavities can be configured to have different peak wavelengths.

[0124] In an embodiment, a channel array having N spectral channels (e.g., N=16 channels) can be formed by combining the routing filter array 300 with the first unit filter F1 to the sixteenth unit filter F16 of the spectral filter array 200. In such an embodiment, the number of cavities having different effective refractive indices (e.g., different lower dielectric patterns or different upper dielectric patterns) in the spectral filter array 200 can be less than the number of spectral channels. For example, when the routing filter array 300 separates and converges light of A bands, the number N' of cavities having different effective refractive indices can satisfy the condition For example, when the channel array has sixteen (16) channels and the routing filter array 300 separates and focuses light of three (3) wavelength bands, the number of cavities having different effective refractive indices (eg, different dielectric patterns) may be six (6) to fifteen (15).

[0125] Fig.15 1 is a cross-sectional view schematically showing a structure of a pixel array 1100a in an image sensor according to an embodiment. The pixel array 1100a may include the above reference Figures 2 to 14 The pixel array 1100 described above and / or may be similar in many respects to the above referenced Figures 2 to 14 The pixel array 1100 described above may include additional features not mentioned above. Therefore, for the sake of brevity, the above reference may be omitted. Figures 2 to 14 The description of pixel array 1100a is repeated.

[0126] refer to Fig.15 , the spectral filter 400a of the pixel array 1100a may include a routing filter array 300, and a spectral filter array 200a disposed between the sensor substrate 100 and the routing filter array 300. The routing filter array 300 may have the same structure as described above. Figures 2 to 14 Same configuration and functionality as described.

[0127] Each of the first unit filter 211, the second unit filter 212, the third unit filter 213, and the fourth unit filter 214 of the spectral filter array 200a may include a first reflector 231 and a second reflector 232 that are spaced apart from each other. In addition, the first unit filter 211, the second unit filter 212, the third unit filter 213, and the fourth unit filter 214 may include a first cavity 221, a second cavity 222, a third cavity 223, and a fourth cavity 224 between the first reflector 231 and the second reflector 232, respectively. The first cavity 221 to the fourth cavity 224 may include a first cavity lower layer 221' to a fourth cavity lower layer 224', a first cavity upper layer 221" to a fourth cavity upper layer 224", and a dielectric separation layer 225 disposed between the cavity lower layers 221' to 224' and the cavity upper layers 221" to 224".

[0128] The first cavity 221 may include a first cavity lower layer 221', a dielectric separation layer 225 and a first cavity upper layer 221", the second cavity 222 may include a second cavity lower layer 222', a dielectric separation layer 225 and a second cavity upper layer 222", the third cavity 223 may include a third cavity lower layer 223', a dielectric separation layer 225 and a third cavity upper layer 223", and the fourth cavity 224 may include a fourth cavity lower layer 224', a dielectric separation layer 225 and a fourth cavity upper layer 224".

[0129] Each of the first to fourth cavities 221 to 224 may include a specific dielectric pattern. The dielectric pattern of each of the first to fourth cavities 221 to 224 may include a lower dielectric pattern of the first cavity lower layer 221' to the fourth cavity lower layer 224' and an upper dielectric pattern of the first cavity upper layer 221" to the fourth cavity upper layer 224". Fig.15 An example is shown in which a lower dielectric pattern and an upper dielectric pattern on the lower dielectric pattern are different from each other.

[0130] Each of the first cavity lower layer 221' to the fourth cavity lower layer 224' may include a first dielectric material 226a and a second dielectric material 226b. Each of the first cavity lower layer 221' to the fourth cavity lower layer 224' may have various lower dielectric patterns according to the material, shape, size and arrangement of the first dielectric material 226a and the second dielectric material 226b. By changing the volume ratio of the first dielectric material 226a and the second dielectric material 226b in each of the first cavity lower layer 221' to the fourth cavity lower layer 224', the effective refractive index of the first cavity 221 to the fourth cavity 224 may be finely adjusted.

[0131] Each of the first cavity upper layer 221" to the fourth cavity upper layer 224" may include one dielectric substance. For example, the first cavity upper layer 221" and the second cavity upper layer 222" may each include a third dielectric material 227a, and the third cavity upper layer 223" and the fourth cavity upper layer 224" may each include a fourth dielectric material 227b. In an embodiment, the material in the fourth dielectric material 227b may have a refractive index greater than that of the third dielectric material 227a. Each of the first cavity upper layer 221" to the fourth cavity upper layer 224" may include only one dielectric substance, and therefore, the effective refractive index of the first cavity 221 to the fourth cavity 224 may be adjusted to a greater extent than that of the first cavity lower layer 221' to the fourth cavity lower layer 224'.

[0132] Fig.16A and Fig. 16B Shows the description Fig.15 The simulation results of the example of the transmission spectrum of the first unit filter 211 to the fourth unit filter 214 are shown. For example, Fig.16A Shows Fig.15 The transmission spectra of the first unit filter 211 and the second unit filter 212 are shown in FIG. Fig. 16B Shows Fig.15 2. The transmission spectra of the third unit filter 213 and the fourth unit filter 214 are shown in FIG. In an example, the first dielectric material 226a and the third dielectric material 227a may include, but are not limited to, silicon oxide (SiO 2 ), and the second dielectric material 226b and the fourth dielectric material 227b may include but are not limited to titanium oxide (TiO 2 In an embodiment, the first to fourth cavity lower layers 221' to 224' may be formed to have a thickness of about 200 nm, and the first to fourth cavity upper layers 221" to 224" may be formed to have a thickness of about 80 nm.

[0133] refer to Fig.16A , shows that when the first cavity upper layer 221" and the second cavity upper layer 222" include silicon oxide (SiO 2 ), and the titanium oxide (TiO 2 ) is 0%, 10%, 20%, 30%, 40% and 50% by volume, the transmission spectra of the first unit filter 211 and the second unit filter 212. Fig.16A , as titanium oxide (TiO 2 ) increases, the peak wavelength (or transmission peak wavelength) in the transmission spectrum of the first unit filter 211 and the second unit filter 212 can move in the increasing direction.

[0134] refer to Fig. 16B , showing that when the third cavity upper layer 223" and the fourth cavity upper layer 224" include titanium oxide (TiO 2 ), and titanium oxide (TiO 2 ) is 0%, 10%, 20%, 30%, 40% and 50%, respectively, and the transmission spectra of the third unit filter 213 and the fourth unit filter 214 are shown in FIG. Fig. 16B , as titanium oxide (TiO 2 ), the peak wavelength (or transmission peak wavelength) in the transmission spectrum of the third unit filter 213 and the fourth unit filter 214 can be moved in the increasing direction. Alternatively or additionally, because the third cavity upper layer 223" and the fourth cavity upper layer 224" include titanium oxide (TiO 2 ), so we can get Fig.16A The first cavity upper layer 221″ and the second cavity upper layer 222″ shown in FIG. 1 include silicon oxide (SiO 2 )'s example shows a transmission spectrum with different peak wavelengths.

[0135] Fig.17A and Fig. 17B Shows the description Fig.15 Other simulation results of examples of transmission spectra of the unit filters 211 to 214 are shown. Fig.17A shows the transmission spectra of the first unit filter 211 and the second unit filter 212, and Fig. 17B FIG. 2 shows the transmission spectra of the third unit filter 213 and the fourth unit filter 214. In an embodiment, the first dielectric material 226a and the third dielectric material 227a may include silicon oxide (SiO 2 ), and the second dielectric material 226b and the fourth dielectric material 227b may include titanium oxide (TiO 2 ). Alternatively or additionally, the first to fourth cavity lower layers 221' to 224' may be formed to have a thickness of about 200 nm, and the first to fourth cavity upper layers 221" to 224" may be formed to have a thickness of about 130 nm.

[0136] exist Fig.17A , it is shown that when the first cavity upper layer 221" and the second cavity upper layer 222" include silicon oxide (SiO 2 ), and titanium oxide (TiO 2 ) when the volume ratio is 0%, 10%, 20%, 30%, 40% and 50%. Fig.17A , as titanium oxide (TiO 2), the peak wavelength (or transmission peak wavelength) in the transmission spectrum of the first unit filter 211 and the second unit filter 212 can be moved in the increasing direction. In addition, since the first cavity upper layer 221" and the second cavity upper layer 222" can be formed to have a thickness of about 130nm, a structure having the same thickness as that of the first cavity upper layer 221" and the second cavity upper layer 222" can be obtained. Fig.16A The first cavity upper layer 221 ″ and the second cavity upper layer 222 ″ shown in FIG. 5 are formed to have a thickness of about 80 nm and have transmission spectra with different peak wavelengths.

[0137] Fig. 17B It is shown that when the third cavity upper layer 223" and the fourth cavity upper layer 224" include titanium oxide (TiO 2 ), and titanium oxide (TiO 2 ) when the volume ratio is 0%, 10%, 20%, 30%, 40% and 50%. Fig. 17B , as titanium oxide (TiO 2 ) volume ratio increases, the peak wavelength (or transmission peak wavelength) in the transmission spectrum of the third unit filter 213 and the fourth unit filter 214 can move in the increasing direction. In addition, because the third cavity upper layer 223 "and the fourth cavity upper layer 224" include titanium oxide (TiO 2 ), so we can get Fig.16A The first cavity upper layer 221″ and the second cavity upper layer 222″ shown in FIG. 1 include silicon oxide (SiO 2 ) of the example. When the third cavity upper layer 223" and the fourth cavity upper layer 224" are formed to have a thickness of about 130 nm, a transmission spectrum having a peak wavelength different from the peak wavelength of the example can be obtained. Fig. 16B The third cavity upper layer 223 ″ and the fourth cavity upper layer 224 ″ shown in are formed to have a thickness of about 80 nm and have transmission spectra with different peak wavelengths.

[0138] As described above, by adjusting the thickness and effective refractive index of the first cavity lower layer 221' to the fourth cavity lower layer 224' and the first cavity upper layer 221" to the fourth cavity upper layer 224", a transmission spectrum with peak wavelengths (or transmission peak wavelengths) in different bands can be obtained.

[0139] Fig.18 1 is a cross-sectional view schematically showing a structure of a pixel array 1100b in an image sensor according to an embodiment. The pixel array 1100b may include the above reference Figures 2 to 17B The pixel array 1100 and pixel array 1100a described above and / or may be similar in many respects to the above referenced Figures 2 to 17BThe pixel array 1100 and pixel array 1100a described above may include additional features not mentioned above. Therefore, for the sake of brevity, the above reference may be omitted. Figures 2 to 17B The description is repeated for pixel array 1100b.

[0140] In the above pixel array 1100 or 1100a, each of the first to fourth element regions R1 to R4 of the routing filter array 300 corresponds to one pixel of the sensor substrate 100 and one unit filter of the spectral filter array 200 or 20a. Fig.18 As shown in , each of the first to fourth element regions R1 to R4 of the routing filter array 300a may correspond to four (4) pixels of the sensor substrate 100 and four (4) unit filters of the spectral filter array 200 or 200a. Fig.18 In the cross-sectional view of FIG. 1 , two pixels (eg, a first pixel 101 and a second pixel 102 ) and two unit filters (eg, a first unit filter 211 and a second unit filter 212 ) corresponding to one first element region R1 are shown.

[0141] Fig.19 It shows Fig.18 A plan view of an example of a configuration of a routing filter array 300a is shown in FIG. Fig.19 , the first element region R1 corresponds to four (4) unit filters (e.g., the first unit filter F1 to the fourth unit filter F4) arranged in a 2×2 array, the second element region R2 corresponds to four (4) unit filters (e.g., the fifth unit filter F5 to the eighth unit filter F8) arranged in a 2×2 array, the third element region R3 corresponds to four (4) unit filters (e.g., the ninth unit filter F9 to the twelfth unit filter F12) arranged in a 2×2 array, and the fourth element region R4 corresponds to four (4) unit filters (e.g., the thirteenth unit filter F13 to the sixteenth unit filter F16) arranged in a 2×2 array. In an embodiment, each of the first element region R1 to the fourth element region R4 may correspond to four (4) pixels arranged in a 2×2 array.

[0142] The configuration and function of the routing filter array 300a may be the same as the configuration and function of the routing filter array 300. For example, the routing filter array 300a may converge green light in the incident light onto four (4) pixels corresponding to the first element region R1, and four (4) pixels corresponding to the fourth element region R4. As another example, the routing filter array 300a may converge blue light in the incident light onto four (4) pixels corresponding to the second element region R2, and converge red light onto four (4) pixels corresponding to the third element region R3. In such an example, the green light may be incident on four (4) unit filters corresponding to the first element region R1 (e.g., the first unit filter F1 to the fourth unit filter F4), and four (4) unit filters corresponding to the fourth element region R4 (e.g., the thirteenth unit filter F13 to the sixteenth unit filter F16). Blue light is incident on four (4) unit filters (e.g., the fifth unit filter F5 to the eighth unit filter F8) corresponding to the second element region R2, and red light can be incident on four (4) unit filters (e.g., the ninth unit filter F9 to the twelfth unit filter F12) corresponding to the third element region R3.

[0143] As described above, when the image sensor 1000 includes sixteen (16) spectral channels, all sixteen (16) unit filters of the spectral filter array 200 or 200a may not need to have different cavities. For example, the spectral filter array 200 or 200a may include six (6) to fifteen (15) cavities. That is, some unit filters of the spectral filter array 200 or 200a may have the same cavity. Fig. 20 200 and 201 are plan views showing examples of different dielectric patterns respectively arranged in a plurality of unit filters of the spectral filter array 200 or 200 a.

[0144] refer to Fig. 20The spectral filter array 200 may include a first unit filter F1 to a sixteenth unit filter F16, and the first unit filter F1 to the sixteenth unit filter F16 include eight (8) different dielectric patterns (for example, a first dielectric pattern PT1, a second dielectric pattern PT2, a third dielectric pattern PT3, a fourth dielectric pattern PT4, a fifth dielectric pattern PT5, a sixth dielectric pattern PT6, a seventh dielectric pattern PT7 and an eighth dielectric pattern PT8). For example, the cavities of the first unit filter F1 and the tenth unit filter F10 may have a first dielectric pattern PT1, the cavities of the second unit filter F2 and the ninth unit filter F9 may have a second dielectric pattern PT2, the cavities of the fourth unit filter F4 and the eleventh unit filter F11 may have a third dielectric pattern PT3, the cavities of the third unit filter F3 and the fifth unit filter F5 may have a fourth dielectric pattern PT4, the cavities of the sixth unit filter F6 and the thirteenth unit filter F13 may have a fifth dielectric pattern PT5, the cavities of the eighth unit filter F8 and the fifteenth unit filter F15 may have a sixth dielectric pattern PT6, the cavities of the seventh unit filter F7 and the sixteenth unit filter F16 may have a seventh dielectric pattern PT7, and the cavities of the twelfth unit filter F12 and the fourteenth unit filter F14 may have an eighth dielectric pattern PT8. The first to eighth dielectric patterns PT1 to PT8 may each have, for example, Fig.14 , Fig.16A , Fig. 16B , Fig.17A or Fig. 17B One of the transmission spectra shown in .

[0145] like Fig. 20As shown in FIG. 1 , the first to fourth unit filters F1 to F4 corresponding to the first element region R1 may have different dielectric patterns (e.g., the first dielectric pattern PT1, the second dielectric pattern PT2, the fourth dielectric pattern PT4, and the third dielectric pattern PT3). Therefore, light having a further narrower peak wavelength within the green light band may be incident on four (4) pixels corresponding to the first to fourth unit filters F1 to F4. The fifth unit filter F5 to the eighth unit filter F8 corresponding to the second element region R2 may have different dielectric patterns (e.g., the fourth dielectric pattern PT4, the fifth dielectric pattern PT5, the seventh dielectric pattern PT7, and the sixth dielectric pattern PT6), the ninth unit filter F9 to the twelfth unit filter F12 corresponding to the third element region R3 may have different dielectric patterns (e.g., the second dielectric pattern PT2, the first dielectric pattern PT1, the third dielectric pattern PT3, and the eighth dielectric pattern PT8), and the thirteenth unit filter F13 to the sixteenth unit filter F16 corresponding to the fourth element region R4 may have different dielectric patterns (e.g., the fifth dielectric pattern PT5, the eighth dielectric pattern PT8, the sixth dielectric pattern PT6, and the seventh dielectric pattern PT7). Therefore, light with a further narrower different peak wavelength within the blue light band can be incident on four (4) pixels corresponding to the fifth unit filter F5 to the eighth unit filter F8, respectively, light with a further narrower different peak wavelength within the red light band can be incident on four (4) pixels corresponding to the ninth unit filter F9 to the twelfth unit filter F12, respectively, and light with a further narrower different peak wavelength within the green light band can be incident on four (4) pixels corresponding to the thirteenth unit filter F13 to the sixteenth unit filter F16, respectively. Alternatively or additionally, the eight unit filters corresponding to the first element region R1 and the fourth element region R4 (e.g., the first unit filter F1, the second unit filter F2, the third unit filter F3, the fourth unit filter F4, the thirteenth unit filter F13, the fourteenth unit filter F14, the fifteenth unit filter F15 and the sixteenth unit filter F16) can have different dielectric patterns (e.g., the first dielectric pattern PT1, the second dielectric pattern PT2, the fourth dielectric pattern PT4, the third dielectric pattern PT3, the fifth dielectric pattern PT5, the eighth dielectric pattern PT8, the sixth dielectric pattern PT6 and the seventh dielectric pattern PT7).

[0146] In another example, the routing filter array 300a can focus green light from the incident light onto the pixel corresponding to the first element region R1, focus blue light onto the pixel corresponding to the second element region R2, focus red light onto the pixel corresponding to the third element region R3, and focus infrared light onto the pixel corresponding to the fourth element region R4. Therefore, the infrared light can be incident on four (4) unit filters (e.g., the thirteenth unit filter F13, the fourteenth unit filter F14, the fifteenth unit filter F15, and the sixteenth unit filter F16) corresponding to the fourth element region R4. Therefore, some of the four (4) unit filters corresponding to the first element region R1 (e.g., the first unit filter F1, the second unit filter F2, the third unit filter F3, and the fourth unit filter F4) and some of the four (4) unit filters corresponding to the fourth element region R4 (e.g., the thirteenth unit filter F13, the fourteenth unit filter F14, the fifteenth unit filter F15, and the sixteenth unit filter F16) can have the same dielectric pattern.

[0147] Fig.21 1 is a cross-sectional view schematically showing a structure of a pixel array 1100c in an image sensor according to an embodiment. The pixel array 1100c may include the above reference Figures 2 to 20 The pixel arrays 1100, 1100a, and 1100b described herein and / or may be similar in many respects to those described above with reference to Figures 2 to 20 The pixel arrays 1100, 1100a, and 1100b described above may include additional features not mentioned above. Therefore, for the sake of brevity, the above reference may be omitted. Figures 2 to 20 The description of pixel array 1100c is repeated.

[0148] refer to Fig.21 , the spectral filter 400b of the pixel array 1100c may further include a spacer layer 350 disposed between the spectral filter array 200 and the routing filter array 300. The spacer layer 350 may have a function of ensuring the distance between the sensor substrate 100 and the routing filter array 300, so that the light separated by the routing filter array 300 may be optimally converged on the sensor substrate 100. Alternatively or additionally, the spacer layer 350 may maintain the distance between the sensor substrate 100 and the routing filter array 300. The spacer layer 350 may include a dielectric material having a low absorptivity in the visible light or infrared band and having a lower refractive index than the nanostructure NP. For example, the spacer layer 350 may include silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3), at least one of silicon nitride (SiN) and silicon oxynitride (SiON). Considering the focal length of light concentrated by the routing filter array 300, the thickness of the spacer layer 350 may be set so that a focusing point can be formed on the sensor substrate 100. For example, the maximum thickness of the spacer layer 350 may be less than or equal to about 1 μm.

[0149] Fig. 22 3 is a graph showing the difference in light utilization efficiency between an image sensor using the routing filter array 300 according to an embodiment and a related image sensor using a general red-green-blue (RGB) filter array. Fig. 22 , the thick solid line represents an example of the transmission spectrum of light reaching a pixel in multiple spectral channels of an image sensor according to the present disclosure, and the thin solid line represents an example of the transmission spectrum of light reaching a pixel in multiple spectral channels of a related image sensor. Fig. 22 , the intensity of light reaching a pixel in multiple spectral channels of an image sensor according to the present disclosure is generally greater than the intensity of light reaching a pixel in multiple spectral channels of a related image sensor. The above result may occur based on the following situation: when the routing filter array 300 is used, the absorption loss is relatively small, while when a general RGB color filter array is used, only about one third (e.g., 1 / 3) of the incident light passes through the color filter array, and about two thirds (e.g., 2 / 3) of the incident light is absorbed.

[0150] The image sensor 1000 including the spectral filter can be used in various high-performance optical devices or high-performance electronic devices. The electronic device may include, for example, but is not limited to: a smart phone, a mobile phone, a telephone, a personal digital assistant (PDA), a laptop computer, a personal computer (PC), various portable devices, electronic devices, surveillance cameras, medical cameras, automobiles, Internet of Things (IoT) devices, other mobile or non-mobile computing devices, etc. The present disclosure is not limited thereto.

[0151] In addition to the image sensor 1000, the electronic device may further include a processor (for example, but not limited to, an application processor (AP)) for controlling the image sensor 1000, and may control a plurality of hardware and / or software elements, and may perform various data processing and operations by driving an operating system or an application program via the processor. The processor may further include a graphics processing unit (GPU) and / or an image signal processor. When the image signal processor is included in the processor, images (and / or videos) obtained by the image sensor may be stored and / or output by using the processor.

[0152] Fig.23 is a block diagram showing an example of an electronic device ED01 including an image sensor 1000. Fig.23In the network environment ED00, the electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (e.g., a short-distance wireless communication network, etc.), and / or can communicate with another electronic device ED04 and / or a server ED08 via a second network ED99 (e.g., a long-distance wireless communication network, etc.). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a tactile module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96, and / or an antenna module ED97. In the electronic device ED01, some elements (e.g., the display device ED60, etc.) may be omitted, and / or other elements may be added. Some of these elements may be configured as an integrated circuit. For example, the sensor module ED76 (e.g., fingerprint sensor, iris sensor, illumination sensor, etc.) can be embedded and implemented in the display device ED60 (e.g., display, etc.). When the image sensor 1000 includes a spectral function, some functions of the sensor module ED76 (e.g., color sensor, illumination sensor, etc.) can be implemented by the image sensor 1000 itself, rather than by a separate sensor module.

[0153] The processor ED20 can control one or more elements (e.g., hardware, software elements, etc.) connected to the processor ED20 in the electronic device ED01 by executing software (e.g., program ED40, etc.), and can perform various data processing or operations. As part of the data processing or operation, the processor ED20 can load commands and / or data received from another element (e.g., sensor module ED76, communication module ED90, etc.) into the volatile memory ED32, can process the commands and / or data stored in the volatile memory ED32, and store the resulting data in the non-volatile memory ED34. The non-volatile memory ED34 can include an internal memory ED36 and an external memory ED38. The processor ED20 can include a main processor ED21 (e.g., a central processing unit, an application processor, etc.), and an auxiliary processor ED23 (e.g., a graphics processing unit, an image signal processor, a sensor hub processor, a communication processor, etc.) that can operate independently of the main processor ED21 and / or operate together with the main processor ED21. The auxiliary processor ED23 may use less power than the main processor ED21 and may perform a designated function.

[0154] The auxiliary processor ED23 can control functions and / or states related to some elements in the electronic device ED01 (e.g., display device ED60, sensor module ED76, communication module ED90, etc.) on behalf of the main processor ED21 when the main processor ED21 is in an inactive state (sleep state), or together with the main processor ED21 when the main processor ED21 is in an active state (application execution state). The auxiliary processor ED23 (e.g., image signal processor, communication processor, etc.) can be implemented as part of another element (e.g., camera module ED80, communication module ED90, etc.) that can be related to its function.

[0155] The memory ED30 can store various data required by the components of the electronic device ED01 (e.g., the processor ED20, the sensor module ED76, etc.). The data may include, for example, input data and / or output data related to software (e.g., the program ED40, etc.) and its related commands. The memory ED30 may include a volatile memory ED32 and / or a non-volatile memory ED34.

[0156] The program ED40 may be stored as software in the memory ED30 , and may include an operating system ED42 , middleware ED44 , and / or applications ED46 .

[0157] The input device ED50 may receive commands and / or data to be used in elements of the electronic device ED01 (e.g., processor ED20, etc.) from outside the electronic device ED01 (e.g., user, etc.). The input device ED50 may include a microphone, a mouse, a keyboard, and / or a digital pen (stylus).

[0158] The sound output device ED55 can output sound signals to the outside of the electronic device ED01. The sound output device ED55 may include a speaker and / or an earpiece. The speaker may be used for general purposes such as multimedia reproduction or recording playback, and the earpiece may be used to receive calls. The earpiece may be coupled as part of the speaker and / or may be implemented as an independent device.

[0159] The display device ED60 can provide visual information to the outside of the electronic device ED01. The display device ED60 may include a display, a holographic device, or a projector, and a control circuit for controlling the corresponding device. The display device ED60 may include a touch circuit configured to sense a touch, and / or a sensor circuit (e.g., a pressure sensor, etc.) configured to measure the strength of the force generated by the touch.

[0160] The audio module ED70 can convert sound into electrical signals and / or can convert electrical signals into sound. The audio module ED70 can obtain sound through the input device ED50, or can output sound via the sound output device ED55, a speaker, and / or a headset directly connected to or wirelessly connected to another electronic device (e.g., electronic device ED02, etc.) of the electronic device ED01.

[0161] The sensor module ED76 can sense the operating state (e.g., power, temperature, etc.) or the external environment state (e.g., user state, etc.) of the electronic device ED01, and can generate an electrical signal and / or data value corresponding to the sensed state. The sensor module ED76 can include a gesture sensor, a gyroscope sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, an in-vivo sensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0162] Interface ED77 may support one or more specified protocols, which may be used to allow electronic device ED01 to be directly (wired) and / or wirelessly connected to another electronic device (e.g., electronic device ED02, etc.). Interface ED77 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, a secure digital (SD) card interface, and / or an audio interface.

[0163] The connection terminal ED78 may include a connector through which the electronic device ED01 may be physically connected to another electronic device (e.g., electronic device ED02, etc.). The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (e.g., a headphone connector, etc.).

[0164] The haptic module ED79 may convert the electrical signal into mechanical stimulation (vibration, motion, etc.) or electrical stimulation that the user may sense through tactile or kinesthetic sense. The haptic module ED79 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0165] The camera module ED80 can capture still images and videos. The camera module ED80 may include a lens assembly having one or more lenses, Figure 1 The image sensor 1000, the image signal processor, and / or the flash lamp of the camera module ED80 may be included in the camera module ED80. The lens assembly included in the camera module ED80 may collect light emitted from a subject (as a subject to be captured).

[0166] The power management module ED88 may manage power supplied to the electronic device ED01. The power management module ED88 may be implemented as a part of a power management integrated circuit (PMIC).

[0167] The battery ED89 can provide power to the components of the electronic device ED01. The battery ED89 can include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell. However, the present disclosure is not limited in this regard, and the battery ED89 can include any type of battery and / or combination of batteries.

[0168] The communication module ED90 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device ED01 and another electronic device (e.g., electronic device ED02, electronic device ED04, server ED08, etc.), and the execution of communication through the established communication channel. The communication module ED90 can operate independently of the processor ED20 (e.g., an application processor, etc.), and can include one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 may include a wireless communication module ED92 (e.g., a cellular communication module, a short-range wireless communication module, a global navigation satellite system (GNSS) communication module, etc.), and / or a wired communication module ED94 (e.g., a local area network (LAN) communication module, a power line communication module, etc.). In the communication module, the corresponding communication module can communicate via a first network ED98 (e.g., a short-range communication network, such as but not limited to, Bluetooth TM , Wi-Fi based on the Institute of Electrical and Electronics Engineers (IEEE 802.11) standard (for example, Wi-Fi Direct), or Infrared Data Association (IrDA)), or a second network ED99 (a long-distance communication network, for example, a cellular network, the Internet, or a computer network (for example, a LAN, a wide area network (WAN), etc.)). The various communication modules can be integrated into one component (for example, a single chip, etc.), or can also be implemented as multiple components separated from each other (for example, multiple chips). The wireless communication module ED92 can identify and authenticate the electronic device ED01 in a communication network (for example, a first network ED98 and / or a second network ED99) by using the subscriber information (for example, an international mobile subscriber identifier (IMSI), etc.) stored in the subscriber identification module ED96.

[0169] The antenna module ED97 can send and / or receive signals and / or power to the outside (e.g., another electronic device, etc.). The antenna may include a radiator formed as a conductive pattern formed on a substrate (e.g., a printed circuit board (PCB, etc.)). The antenna module ED97 may include one or more antennas. When the antenna module ED97 includes multiple antennas, an antenna of a communication type suitable for use in a communication network such as a first network ED98 and / or a second network ED99 may be selected from the multiple antennas by the communication module ED90. Signals and / or power can be sent between the communication module ED90 and another electronic device via the selected antenna. Another component other than the antenna (e.g., a radio frequency integrated circuit (RFIC), etc.) may be included as part of the antenna module ED97.

[0170] Some elements may be connected to each other via a communication method between peripheral devices (e.g., bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and may exchange signals (e.g., commands, data, etc.).

[0171] Commands and / or data can be sent and / or received between the electronic device ED01 and the external electronic device ED04 via a server ED08 connected to the second network ED99. Other electronic devices ED02 and ED04 can be and / or can include devices that are substantially similar and / or identical to the electronic device ED01. However, the present disclosure is not limited in this regard, and the electronic devices ED02 and ED04 can be devices of different types from the electronic device ED01. All or some of the operations performed in the electronic device ED01 can be performed in one or more devices among the other electronic devices ED02, ED04 and ED08. For example, when the electronic device ED01 must perform a certain function and / or service, the electronic device ED01 can request one or more other electronic devices to perform some and / or the entire function and / or service instead of performing the function and / or service by itself. One or more electronic devices that receive the request can perform additional functions and / or services related to the request, and the results of the execution can be transmitted to the electronic device ED01. For example, cloud computing, distributed computing, or client-server computing technology can be used.

[0172] Fig.24 It shows Fig.23 1 is a block diagram of an example of a camera module ED80 included in an electronic device ED01. Fig.24, the camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, a memory 1150 (e.g., a buffer memory, etc.), and / or an image signal processor 1160. The lens assembly 1110 may collect light emitted from an object to be captured. The camera module ED80 may include a plurality of lens assemblies 1110. For example, the camera module ED80 may be and / or may include a dual camera module, a 360-degree camera, a spherical camera, etc. Some of the plurality of lens assemblies 1110 may have the same lens properties (e.g., viewing angle, focal length, autofocus, F number, optical zoom, etc.) and / or different lens properties. The lens assembly 1110 may include, but is not limited to, a wide-angle lens, a telephoto lens, etc.

[0173] The flash 1120 may emit light that may be used to enhance light emitted and / or reflected from an object. The flash 1120 may emit visible light, infrared (IR) light, etc. The flash 1120 may include one or more light emitting diodes (LEDs) (e.g., RGB LEDs, white LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or xenon lamps. The image sensor 1000 may include the above-referenced Figure 1 The image sensor, and / or may be similar in many respects to the above referenced Figure 1 The image sensor 1000 may include additional features not mentioned above. The image sensor 1000 may convert light emitted and / or reflected from an object and transmitted through the lens assembly 1110 into an electrical signal to obtain an image corresponding to the object.

[0174] In response to the movement of the camera module ED80 and / or the electronic device ED01 including the camera module ED80, the image stabilizer 1140 may move one or more lenses included in the lens assembly 1110 and / or the image sensor 1000 in a specific direction, and / or may control the operating characteristics of the image sensor 1000 (e.g., adjustment of the readout timing, etc.) to compensate for the negative effects of the movement. The image stabilizer 1140 may sense the movement of the camera module ED80 and / or the electronic device ED01 by using a gyroscope sensor and / or an acceleration sensor provided in the camera module ED80 or outside the camera module ED80. The image stabilizer 1140 may be implemented as an optical type.

[0175] The memory 1150 may store some or all of the data of the image obtained by the image sensor 1000 for the next image processing operation. For example, when a plurality of images are obtained at a high speed, the obtained raw data (e.g., Bayer pattern data, high-resolution data, etc.) may be stored in the memory 1150, and only the low-resolution image may be displayed. Subsequently, the raw data of the selected image (e.g., due to user selection, etc.) may be transmitted to the image signal processor 1160. The memory 1150 may be integrated with the memory ED30 of the electronic device ED01, and / or may include an additional memory that operates independently.

[0176] The image signal processor 1160 may perform image processing on the image obtained by the image sensor 1000 and / or the image data stored in the memory 1150. Image processing may include depth map generation, three-dimensional (3D) modeling, panorama generation, feature extraction, image combination, and / or image compensation (e.g., noise reduction, resolution adjustment, brightness adjustment, blur, sharpening, softening, etc.). The image signal processor 1160 may perform control (e.g., exposure time control, readout timing control, etc.) of the elements (e.g., image sensor 1000, etc.) included in the camera module ED80. In an embodiment, the image signal processor 1160 may generate a full-color image by executing a demosaicing algorithm. For example, when a demosaicing algorithm is executed to generate a full-color image, the image signal processor 1160 may reconstruct most of the spatial resolution information by using an image signal of a green channel or a yellow channel having a high spatial sampling rate.

[0177] The image processed by the image signal processor 1160 may be stored again in the memory 1150 for additional processing, and / or may be provided to an external element of the camera module ED80 (e.g., the memory ED30, the display device ED60, the electronic device ED02, the electronic device ED04, the server ED08, etc.). The image signal processor 1160 may be integrated with the processor ED20, and / or may be configured as an additional processor that may operate independently of the processor ED20. When the image signal processor 1160 is configured as an additional processor independent of the processor ED20, the image processed by the image signal processor 1160 may be subjected to additional image processing by the processor ED20, and then displayed on the display device ED60.

[0178] In an embodiment, the image signal processor 1160 may independently receive two output signals from adjacent photosensitive units in each pixel and / or sub-pixel of the image sensor 1000, and may generate an autofocus signal based on a difference between the two output signals. The image signal processor 1160 may control the lens assembly 1110 based on the autofocus signal so that the focus of the lens assembly 1110 may be accurately formed on the surface of the image sensor 1000.

[0179] The electronic device ED01 may also include one or more camera modules with different properties and / or functions. The camera module may include Fig.24 The elements of the camera module ED80 are similar to those of the elements of the camera module ED80, and the image sensor included in the camera module can be implemented as a CCD sensor and / or a CMOS sensor, and can include one or more sensors selected from image sensors with different properties (for example, but not limited to, an RGB sensor, a black and white (BW) sensor, an IR sensor, or an ultraviolet (UV) sensor). For example, one of the multiple camera modules ED80 may include a wide-angle camera, and another camera module ED80 may include a telephoto camera. Similarly, one of the multiple camera modules ED80 may include a front camera, and another camera module ED80 may include a rear camera. In addition, the camera module ED80 may be a combined camera module, in which an image sensor with a general RGB three-color filter and a spectral image sensor including a spectral filter are combined, and data from the two image sensors combined together are processed as a whole.

[0180] Fig.25 is a block diagram of an electronic device 1200 including a multi-camera module according to an embodiment. Fig.26 According to the embodiment Fig.25 Detailed block diagram of a camera module in an electronic device shown in FIG.

[0181] refer to Fig.25 , the electronic device 1200 may include a camera module group 1300 , an application processor 1400 , a power management integrated circuit (PMIC) 1500 , an external memory 1600 , and an image generator 1700 .

[0182] The camera module group 1300 may include a plurality of camera modules (e.g., a first camera module 1300a, a second camera module 1300b, and a third camera module 1300c). Although the drawings show an example in which three (3) camera modules 1300a to 1300c are arranged, the present disclosure is not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two (2) camera modules. In addition, in some embodiments, the camera module group 1300 may be modified to include four (4) or more camera modules.

[0183] In the following, reference is made to Fig.26 A detailed configuration of the second camera module 1300 b is described, but the description provided below may also be applied to other camera modules (eg, the first camera module 1300 a and the third camera module 1300 c ) according to an embodiment.

[0184] refer to Fig.26 , the second camera module 1300 b may include a prism 1305 , an optical path folding element (OPFE) 1310 , an actuator 1330 , an image sensing device 1340 , and a storage unit 1350 .

[0185] The prism 1305 may include a reflective surface 1307 having a light reflective material, and may deform a path of light L incident from the outside.

[0186] In some embodiments, the prism 1305 can change the path of the light L incident along the first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). The prism 1305 can rotate the reflective surface 1307 having the light reflective material around the central axis 1306 in the direction A, or rotate the central axis 1306 in the direction B, so that the path of the light L incident along the first direction (X direction) can be changed to a second direction (Y direction) perpendicular to the first direction (X direction). The OPFE 1310 can also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0187] In some embodiments, as shown in the figure, the maximum rotation angle of the prism 1305 in the A direction is 15° or less in the positive A direction and is greater than 15° in the negative A direction, but the present disclosure is not limited thereto.

[0188] In some embodiments, prism 1305 can be moved by an angle of about 20°, between about 10° and about 20°, or between about 15° and about 20° in the positive B direction or the negative B direction. As used herein, the movement angle can be the same in the positive B direction or the negative B direction, and / or can be substantially similar within a range of about 1°.

[0189] In some embodiments, the prism 1305 may move the reflective surface 1307 of the light reflective material in a third direction (eg, a Z direction) parallel to the direction in which the central axis 1306 extends.

[0190] OPFE 1310 may include, for example, optical lenses formed into m groups, where m is a positive integer greater than zero (0). The m lenses may move in the second direction (Y direction), and may change the optical zoom ratio of camera module 1300b. For example, when the basic optical zoom ratio of camera module 1300b is Z, and the m optical lenses included in OPFE 1310 move, the optical zoom ratio of camera module 1300b may be changed to 3Z, 5Z, or 10Z or more.

[0191] The actuator 1330 may move the OPFE 1310 and / or the optical lens (hereinafter, referred to as the optical lens) to a specific position. For example, the actuator 1330 may adjust the position of the optical lens so that the image sensor 1342 may be located at the focal length of the optical lens for accurate sensing operations.

[0192] The image sensing device 1340 may include an image sensor 1342, a control logic 1344, and a memory 1346. The image sensor 1342 may sense an image of a sensing target by using light L provided through an optical lens. The control logic 1344 may control the overall operation of the camera module 1300b. For example, the control logic 1344 may control the operation of the camera module 1300b according to a control signal provided through the control signal line CSLb.

[0193] For example, the image sensor 1342 may include the color separation lens array or nanophotonic lens array described above. The image sensor 1342 may receive more signals separated by wavelength in each pixel by using a color separation lens array based on a nanostructure. Due to the above effect, the light intensity required to generate a high-resolution, high-quality image under low illumination can be ensured.

[0194] The memory 1346 may store information required for the operation of the camera module 1300b (e.g., calibration data 1347). The calibration data 1347 may include information required for generating image data by the camera module 1300b by using the light L provided from the outside. The calibration data 1347 may include, for example, information related to the above-mentioned rotation degree, information related to the focal length, information related to the optical axis, etc. When the camera module 1300b is implemented in the form of a multi-state camera in which the focal length changes according to the position of the optical lens, the calibration data 1347 may include information related to the focal length value of the optical lens according to each position (or state) and autofocus.

[0195] The storage unit 1350 may store image data sensed by the image sensor 1342. The storage unit 1350 may be provided outside the image sensing device 1340, and may be stacked with a sensor chip included in the image sensing device 1340. In some embodiments, the storage unit 1350 may be implemented as an electrically erasable programmable read-only memory (EEPROM), however, the present disclosure is not limited thereto.

[0196] refer to Fig.25 and Fig.26 In some embodiments, each of the plurality of camera modules 1300a to 1300c may include an actuator 1330. Therefore, depending on the operation of the actuator 1330 included therein, each of the plurality of camera modules 1300a to 1300c may include calibration data 1347 that may be the same and / or different from each other.

[0197] In some embodiments, one of the plurality of camera modules 1300a to 1300c (e.g., the second camera module 1300b) may be a folded lens type camera module including the above-described prism 1305 and OPFE 1310, and the other camera modules (e.g., the first camera module 1300a and the third camera module 1300c) may be and / or may include a vertical type camera module that does not include the prism 1305 and OPFE 1310. However, the present disclosure is not limited thereto.

[0198] In some embodiments, one of the plurality of camera modules 1300a to 1300c (eg, the third camera module 1300c) may be a vertical type depth camera that may extract depth information by using IR rays.

[0199] In some embodiments, at least two camera modules (e.g., first camera module 1300a and second camera module 1300b) among the plurality of camera modules 1300a to 1300c may have different fields of view. For example, optical lenses of at least two camera modules (e.g., first camera module 1300a and second camera module 1300b) among the plurality of camera modules 1300a to 1300c may be different from each other. However, the present disclosure is not limited thereto.

[0200] In some embodiments, the plurality of camera modules 1300a to 1300c may have different fields of view from each other. For example, the optical lenses respectively included in the plurality of camera modules 1300a to 1300c may be different from each other, however, the present disclosure is not limited thereto.

[0201] In some embodiments, the plurality of camera modules 1300a to 1300c may be physically isolated from each other. That is, the sensing area of ​​one image sensor 1342 may not be divided and used by the plurality of camera modules 1300a to 1300c, but the plurality of camera modules 1300a to 1300c may each have an independent image sensor 1342 disposed therein.

[0202] refer to Fig.25 , the application processor 1400 may include an image processing device 1410, a memory controller 1420, and an internal memory 1430. The application processor 1400 may be implemented separately from the plurality of camera modules 1300a to 1300c. For example, the application processor 1400 and the plurality of camera modules 1300a to 1300c may be implemented separately as separate semiconductor chips.

[0203] The image processing device 1410 may include a plurality of image processors (eg, a first image processor 1411 , a second image processor 1412 , and a third image processor 1413 ) and a camera module controller 1414 .

[0204] The image data generated by each of the camera modules 1300a to 1300c may be provided to the image processing device 1410 via separate image signal lines, respectively. For example, the image data transmission may be performed by using a camera serial interface (CSI) based on MIPI. However, the present disclosure is not limited thereto.

[0205] The image data transmitted to the image processing device 1410 may be stored in the external memory 1600 before being transmitted to the first image processor 1411 and the second image processor 1412. The image data stored in the external memory 1600 may be provided to the first image processor 1411 and / or the second image processor 1412. The first image processor 1411 may correct the image data to generate a video. The second image processor 1412 may correct the image data to generate a still image. For example, the first image processor 1411 and the second image processor 1412 may perform pre-processing operations on the image data, such as, but not limited to, color calibration, gamma calibration.

[0206] The image processor 1411 may include sub-processors. When the number of sub-processors is equal to the number of camera modules 1300a to 1300c, each sub-processor may process image data provided from a corresponding camera module. When the number of sub-processors is less than the number of camera modules 1300a to 1300c, at least one of the sub-processors may process image data provided from a plurality of camera modules 1300a to 1300c by using a time-sharing process. Image data processed by the first image processor 1411 and / or the second image processor 1412 may be stored in the external memory 1600 before being transmitted to the third image processor 1413. The image data stored in the external memory 1600 may be transmitted to the second image processor 1412. The second image processor 1412 may perform post-processing operations on the image data, such as, but not limited to, noise calibration, sharpening calibration, and the like.

[0207] The image data processed in the third image processor 1413 may be provided to the image generator 1700. The image generator 1700 may generate a final image by using the image data provided from the third image processor 1413 according to the image generation information or the mode signal.

[0208] That is, the image generator 1700 may generate a final image by merging at least a portion of the image data generated by the camera modules 1300a to 1300c having different fields of view according to the image generation information and / or the mode signal. In an embodiment, the image generator 1700 may generate an output image by selecting one of the image data generated by the camera modules 1300a to 1300c having different fields of view according to the image generation information or the mode signal.

[0209] In some embodiments, the image generation information may include a zoom signal or a zoom factor.For example, the mode signal may be and / or may include a signal based on a mode selected by a user.

[0210] When the image generation information is a zoom signal (zoom factor) and the plurality of camera modules 1300a to 1300c have different fields of view (angles of view) from each other, the image generator 1700 may perform different operations according to the type of the zoom signal. For example, when the zoom signal is a first signal, the image data output from the first camera module 1300a may be merged with the image data output from the third camera module 1300c, and an output image may be generated by using the merged image signal and the image data output from the second camera module 1300b and not used for merging. When the zoom signal is a second signal different from the first signal, the image generator 1700 may not perform image data merging, and may generate an output image by selecting one of the image data outputted from the plurality of camera modules 1300a to 1300c, respectively. However, the present disclosure is not limited thereto, and the method of processing image data may be modified as needed.

[0211] The camera module controller 1414 may provide a control signal to each of the plurality of camera modules 1300a to 1300c. The control signal generated by the camera module controller 1414 may be provided to the corresponding camera modules 1300a to 1300c via control signal lines (e.g., first control signal line CSLa, second control signal line CSLb, and third control signal line CSLc) separated from each other.

[0212] In some embodiments, the control signal provided from the camera module controller 1414 to the plurality of camera modules 1300a to 1300c may include mode information according to the mode signal. The plurality of camera modules 1300a to 1300c may operate in a first operation mode and / or a second operation mode related to the sensing speed based on the mode information.

[0213] In the first operation mode, the plurality of camera modules 1300a to 1300c may generate image signals at a first speed (e.g., generate image signals at a first frame rate), may encode the image signals at a second speed that may be faster than the first speed (e.g., may encode the image signals at a second frame rate that may be greater than the first frame rate), and may transmit the encoded image signals to the application processor 1400. For example, the second speed may be 30 times or lower than the first speed.

[0214] The application processor 1400 may store the received image signal (e.g., the encoded image signal) in the internal memory 1430 provided therein and / or the external memory 1600 outside the application processor 1400. The application processor 1400 may decode the encoded signal from the internal memory 1430 and / or the external memory 1600, and display image data generated based on the decoded image signal. For example, the first image processor 1411 and the second image processor 1412 in the image processing device 1410 may perform decoding, and may perform image processing on the decoded image signal.

[0215] In the second operation mode, the plurality of camera modules 1300a to 1300c may generate image signals at a third speed slower than the first speed (e.g., generate image signals at a third frame rate lower than the first frame rate), and may transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 may be uncoded signals. The application processor 1400 may perform image processing on the received image signals, and / or store the image signals in the internal memory 1430 and / or the external memory 1600.

[0216] The PMIC 1500 may supply power (e.g., power supply voltage) to each of the plurality of camera modules 1300a to 1300c. For example, under the control of the application processor 1400, the PMIC 1500 may supply a first power to the first camera module 1300a via a first power signal line PSLa, supply a second power to the second camera module 1300b via a second power signal line PSLb, and supply a third power to the third camera module 1300c via a third power signal line PSLc.

[0217] In response to the power control signal PCON from the application processor 1400, the PMIC 1500 may generate power corresponding to each of the plurality of camera modules 1300a to 1300c and adjust the power level. The power control signal PCON may include a power adjustment signal for each operating mode of the plurality of camera modules 1300a to 1300c. For example, the operating mode may include a low power mode, and the power control signal PCON may include information about the camera module operating in the low power mode, and the set power level. The power levels provided to the plurality of camera modules 1300a to 1300c may be equal to or different from each other. Alternatively or additionally, the power level may be dynamically changed.

[0218] It will be understood that the embodiments described herein should be considered in a descriptive sense only and not for restrictive purposes. The description of features or aspects in each embodiment can generally be regarded as other similar features or aspects that can be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope defined by the appended claims.

Claims

1. An image sensor, comprising: a sensor substrate including a plurality of pixels configured to sense light; as well as a spectral filter configured to separate incident light into at least four different wavelength bands and provide the separated incident light to the plurality of pixels, Wherein, the spectral filter comprises: a routing filter array, comprising a plurality of nanostructures, the plurality of nanostructures being configured to separate the incident light color into at least three different wavelength bands and to focus the separated incident light onto the plurality of pixels; and The spectral filter array is between the sensor substrate and the routing filter array and includes a plurality of unit filters having different transmission spectra, and the plurality of unit filters respectively correspond to the plurality of pixels.

2. The image sensor according to claim 1, wherein: The routing filter array includes a first element area, a second element area, a third element area and a fourth element area, wherein each of the first element region, the second element region, the third element region, and the fourth element region corresponds to one of the plurality of pixels and corresponds to one of the plurality of unit filters, wherein the plurality of nanostructures are disposed in each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region, and Wherein, the plurality of nanostructures are further configured to change the phase of the incident light.

3. The image sensor according to claim 2, wherein: The plurality of nanostructures are further configured as: Converging a first light of the incident light onto a first pixel corresponding to the first element region and the fourth element region, the first light having a first wavelength band, and the incident light being incident on the first element region, the second element region, the third element region, and the fourth element region; Converging a second light in the incident light onto a second pixel corresponding to the second element area, the second light having a second wavelength band; as well as A third light in the incident light is focused onto a third pixel corresponding to the third element region, where the third light has a third wavelength band.

4. The image sensor according to claim 2, wherein: The plurality of nanostructures are further configured as: Converging a first light of the incident light onto a first pixel corresponding to the first element region, the first light having a first wavelength band, and the incident light being incident on the first element region, the second element region, the third element region, and the fourth element region; Converging a second light in the incident light onto a second pixel corresponding to the second element area, the second light having a second wavelength band; Converging a third light in the incident light onto a third pixel corresponding to the third element region, the third light having a third wavelength band; and A fourth light in the incident light is focused onto a fourth pixel corresponding to the fourth element area, where the fourth light has a fourth wavelength band.

5. The image sensor according to claim 1, wherein: The routing filter array includes a first element area, a second element area, a third element area and a fourth element area, wherein each of the first element area, the second element area, the third element area, and the fourth element area corresponds to four pixels arranged in a 2×2 array among the plurality of pixels, and corresponds to four unit filters arranged in a 2×2 array among the plurality of unit filters, wherein the plurality of nanostructures are disposed in each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region, and Wherein, the plurality of nanostructures are further configured to change the phase of the incident light.

6. The image sensor according to claim 5, wherein: The plurality of nanostructures are further configured as: Converging a first light of the incident light onto four first pixels respectively corresponding to the first element region and the fourth element region, wherein the first light has a first wavelength band, and the incident light is incident on the first element region, the second element region, the third element region, and the fourth element region; Converging second light in the incident light onto four second pixels corresponding to the second element area, the second light having a second wavelength band; as well as The third light in the incident light is focused onto four third pixels corresponding to the third element area, and the third light has a third wavelength band.

7. The image sensor according to claim 5, wherein: The plurality of nanostructures are further configured as: Converging a first light of the incident light onto four first pixels corresponding to the first element region, wherein the first light has a first wavelength band, and the incident light is incident on the first element region, the second element region, the third element region, and the fourth element region; Converging second light in the incident light onto four second pixels corresponding to the second element area, the second light having a second wavelength band; Converging third light in the incident light onto four third pixels corresponding to the third element area, the third light having a third wavelength band; and The fourth light in the incident light is focused onto four fourth pixels corresponding to the fourth element area, and the fourth light has a fourth wavelength band.

8. The image sensor according to claim 1, wherein: Each of the plurality of unit filters comprises: first reflector; a second reflector above the first reflector; and a cavity between the first reflector and the second reflector, and Each of the plurality of unit filters has a transmission spectrum including at least two different transmission peak wavelengths.

9. The image sensor according to claim 8, wherein: The plurality of cavities of the plurality of unit filters have the same thickness.

10. The image sensor according to claim 8, wherein: The cavity comprises: a cavity lower layer having a lower dielectric pattern formed of a first dielectric material and a second dielectric material, the first dielectric material having a first refractive index, the second dielectric material having a second refractive index greater than the first refractive index; and The cavity upper layer has an upper dielectric pattern formed of a third dielectric material and a fourth dielectric material, wherein the third dielectric material has a third refractive index, and the fourth dielectric material has a fourth refractive index greater than the third refractive index.

11. The image sensor according to claim 10, wherein: The first effective refractive index of the cavity lower layer is determined according to a first volume ratio of a first volume occupied by the first dielectric material to a second volume occupied by the second dielectric material in the cavity lower layer. The second effective refractive index of the upper layer of the cavity is determined according to a second volume ratio of a third volume occupied by the third dielectric material to a fourth volume occupied by the fourth dielectric material in the upper layer of the cavity, and The effective refractive index and thickness of the cavity lower layer and the cavity upper layer are determined in each of the plurality of unit filters so that each of the plurality of unit filters has a transmission spectrum including at least two different peak wavelengths.

12. The image sensor according to claim 11, wherein: Two or more of the plurality of cavities in the plurality of unit filters have the same lower dielectric pattern and the same upper dielectric pattern.

13. The image sensor according to claim 11, wherein: A plurality of spectral channels are formed by combining the routing filter array with the plurality of unit filters of the spectral filter array, and Wherein, the number of cavities having different lower dielectric patterns or different upper dielectric patterns in the spectral filter array is less than the number of spectral channels.

14. The image sensor according to claim 11, wherein: Based on the fact that the image sensor has N spectral channels, and the routing filter array separates and converges incident light of A bands, the number N' of cavities with different lower dielectric patterns or different upper dielectric patterns satisfies the condition and Wherein, N is a positive integer greater than or equal to four, and A is a positive integer greater than or equal to three.

15. The image sensor according to claim 10, wherein: The cavity further includes a dielectric separation layer between the cavity lower layer and the cavity upper layer, and Wherein, the refractive index of the dielectric separation layer is less than or equal to the second refractive index or the fourth refractive index.

16. The image sensor according to claim 15, wherein: The dielectric separation layer includes at least one of hafnium oxide HfO 2 and titanium oxide TiO 2 .

17. The image sensor according to claim 15, wherein: The dielectric separation layer has a thickness of 10 nm to 100 nm.

18. The image sensor according to claim 1, wherein: A bandwidth of a transmission spectrum of the routing filter array is greater than a bandwidth of a transmission spectrum of each of the plurality of unit filters in the spectrum filter array.

19. The image sensor according to claim 1, wherein: The spectral filter further comprises a spacer layer between the spectral filter array and the routing filter array, and Wherein, the refractive index of the spacer layer is smaller than the refractive index of the plurality of nanostructures.

20. An electronic device comprising: a lens assembly configured to form an optical image of a subject; an image sensor configured to convert an optical image formed by the lens assembly into an electrical signal; as well as A processor configured to process a signal generated by the image sensor, wherein the image sensor comprises: a sensor substrate including a plurality of pixels configured to sense light; and a spectral filter configured to separate incident light into at least four different wavelength bands and provide the separated incident light to the plurality of pixels, and Wherein, the spectral filter comprises: a routing filter array, comprising a plurality of nanostructures, the plurality of nanostructures being configured to separate the incident light color into at least three different wavelength bands and to focus the separated incident light onto the plurality of pixels; and The spectral filter array is between the sensor substrate and the routing filter array and includes a plurality of unit filters having different transmission spectra, and the plurality of unit filters respectively correspond to the plurality of pixels.

Images