Pollutant treatment equipment

Abstract

A contaminant treatment apparatus is provided that measures and removes particles or chemical gases generated in a semiconductor production line. The pollutant treatment apparatus includes: a main body unit; a driving unit mounted on the main body unit and configured to be driven inside the semiconductor production line; a manipulator mounted on an upper surface of the main body unit and including a plurality of joints; a suction unit mounted on an upper surface of the main body unit and connected to the manipulator; and a controller that controls the manipulator to position the suction unit on a processing chamber inside the semiconductor production line, and controls the suction unit to suck the chemical gas discharged from the processing chamber.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0166250 filed in the Korean Intellectual Property Office on November 27, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a pollutant treatment device. Background Art

[0004] Generally, a semiconductor or display device can be manufactured by repeatedly performing a series of manufacturing processes on a substrate such as a silicon wafer or a glass substrate. For example, manufacturing processes such as deposition, photolithography, oxidation, ion implantation, and cleaning can be selectively and / or repeatedly performed to form a circuit pattern on the substrate.

[0005] These manufacturing processes may be performed in a clean room. When the manufacturing processes are performed, particles or harmful chemical gases may be generated in the clean room. Since the particles or harmful chemical gases have a significant impact on the manufacturing processes, it is necessary to treat these pollutants to control contamination. Summary of the invention

[0006] Aspects and features of embodiments of the present disclosure provide a pollutant treatment device for measuring and removing particles or chemical gases generated within a semiconductor production line.

[0007] Another aspect and feature of an embodiment of the present disclosure provides a contaminant processing method for measuring and removing particles or chemical gases generated within a semiconductor production line.

[0008] According to some aspects of the present disclosure, a contaminant treatment device is provided, including: a main body unit; a driving unit, which is installed on the main body unit and configured to be driven inside a semiconductor production line; a manipulator, which is installed on the upper surface of the main body unit and includes a plurality of joints; a suction unit, which is installed on the upper surface of the main body unit and connected to the manipulator; and a controller, which controls the manipulator to position the suction unit on a processing chamber inside the semiconductor production line and controls the suction unit to inhale chemical gases exhausted from the processing chamber.

[0009] According to some aspects of the present disclosure, a pollutant treatment device is provided, including: a main unit, including different first and second surfaces; a driving unit, installed in the main unit and configured to be driven inside a semiconductor production line; a position sensor, installed in the main unit and configured to sense a position inside the semiconductor production line; a purification unit, installed in the main unit and configured to penetrate the first and second surfaces, wherein the purification unit includes: a suction fan, installed in a first area, and sucking in particles and chemical gases; a collecting unit, installed in the second area, and filtering particles and chemical gases; a particle sensor for measuring particles and a chemical gas detection sensor for measuring chemical gases, wherein the particle sensor and the chemical gas detection sensor are installed in a third area between the first area and the second area; and a drainage path, arranged in the third area; a manipulator, installed on the upper surface of the main unit and including a plurality of joints; a suction unit, installed on the upper surface of the main unit and connected to the manipulator; and a controller, controlling the manipulator to position the suction unit on a processing chamber inside the semiconductor production line, and controlling the suction unit to suck in chemical gases and particles present on the processing chamber.

[0010] According to some aspects of the present disclosure, there is provided a pollutant treatment device, comprising: a main body unit, comprising different first and second surfaces; a driving unit, installed in the main body unit and configured to drive inside a semiconductor production line; a position sensor, installed in the main body unit and configured to sense a position inside the semiconductor production line; a purification unit, installed in the main body unit and configured to penetrate the first and second surfaces, wherein the purification unit comprises: a suction fan, installed in a first area, and sucking chemical gas; a collecting unit, installed in the second area, and filtering the chemical gas; a drainage path, installed in a third area between the first area and the second area, and having one side, a center, and another side; and a chemical gas detection sensor for measuring the chemical gas, installed in the center of the drainage path; a manipulator, installed on an upper surface of the main body unit, and comprising a plurality of joints; A suction unit is installed on the upper surface of the main unit and is connected to the manipulator, wherein the suction unit includes a suction cup and a suction cable, the suction cup is used to suck chemical gas, the suction cable is connected to the suction cup and the main unit, and the sucked chemical gas moves through the suction cable; a distance control sensor is installed on one side of the main unit and controls the distance between the processing chamber that exhausts the chemical gas and the main unit; and a controller receives the concentration of the chemical gas from the chemical gas detection sensor, receives position data from the position sensor, checks the concentration of the chemical gas according to the position within the semiconductor production line, and controls the manipulator and the suction unit, wherein the controller performs the following operations: uses the chemical gas detection sensor to check the concentration of the chemical gas, uses the position sensor to sense the position of the chemical gas, uses the manipulator to move the suction unit to the position of the chemical gas, and controls the suction unit to suck the chemical gas.

[0011] The technical problems of the present disclosure are not limited to the above-mentioned technical problems, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figures 1 to 5 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0013] Figures 6 to 9 is a diagram illustrating pollutant treatment operations of a pollutant treatment device according to some embodiments of the present disclosure.

[0014] Figures 10 to 12 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0015] Fig.13 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0016] Fig.14is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0017] Fig.15 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0018] Fig.16 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0019] Fig.17 is a diagram illustrating a pollutant treatment method according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0020] In this specification, although the terms "first", "second", etc. are used to describe various elements or components, these elements or components are not limited by these terms. These terms are only used to distinguish one element or component from another element or component. Therefore, the first element or component mentioned below may also be a second element or component within the technical concept of the present disclosure.

[0021] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same components in the drawings are denoted by the same reference numerals, and repeated description thereof will be omitted.

[0022] Figures 1 to 5 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure.

[0023] refer to Figures 1 to 5 The pollutant treatment device may include a main body unit 110 , a purification unit 120 , a driving unit 130 , a position sensor 115 , a manipulator 200 , a suction unit 300 , a distance control sensor 400 , an image processing unit 1500 , and a controller 1000 .

[0024] The main body unit 110 may include a first surface 111 and a second surface 112 opposite to the first surface 111. The main body unit 110 may include a plurality of surfaces. The main body unit 110 may have an empty space inside. Figure 1 , the main body unit 110 is shown as a cube or a rectangle, but is not limited thereto.

[0025] The main body unit 110 may be directly or indirectly connected to a purification unit 120, a driving unit 130, a position sensor 115, a manipulator 200, a suction unit 300, a distance control sensor 400, a controller 1000, and an image processing unit 1500, which will be described later. The main body unit 110 may be a main body of the pollutant treatment apparatus.

[0026] The purification unit 120 may be coupled to the body unit 110. The purification unit 120 may be installed in an inner space of the body unit 110. The first surface 111 and the second surface 112 of the body unit 110 may be penetrated by the purification unit 120.

[0027] The purification unit 120 may include a first area A1, a second area A2, and a third area A3. The purification unit 120 may be formed to extend in a horizontal direction. The first area A1, the second area A2, and the third area A3 of the purification unit 120 may be arranged in one direction. The third area A3 may be between the first area A1 and the second area A2.

[0028] The first area A1 may be disposed closer to the first surface 111 of the body unit 110 than the second area A2. The second area A2 may be disposed closer to the second surface 112 of the body unit 110 than the first area A1.

[0029] The purification unit 120 may include a drainage path 125 , a suction fan 121 , a collection unit 122 , a chemical gas detection sensor 124 , and a particle sensor 123 .

[0030] The drainage path 125 may be provided between the first surface 111 and the second surface 112 of the body unit 110. The drainage path 125 may be installed in the third area A3 of the purification unit 120. The drainage path 125 may have an elongated cylindrical shape.

[0031] The drainage path 125 may include one side 126, a center 128, and another side 127. The one side 126 may be a boundary between the first area A1 and the third area A3. The center 128 may be between the one side 126 and the other side 127. The other side 127 may be a boundary between the second area A2 and the third area A3.

[0032] The first area A1 may be disposed between one side 126 of the drainage path 125 and the first surface 111 of the body unit 110. A width of the first area A1 may be greater than a maximum width of the drainage path 125.

[0033] The second area A2 may be disposed between the other side 127 of the drainage path 125 and the second surface 112 of the body unit 110. The width of the second area A2 may be greater than the maximum width of the drainage path 125.

[0034] The width W1 of the drainage path 125 may gradually decrease from one side 126 toward the center 128. The width W1 of the drainage path 125 may gradually increase from the center 128 toward the other side 127.

[0035] The width W1 of the drainage path 125 may not be constant in a direction from one side 126 to the other side 127. The width of the center 128 may be smaller than the width of the one side 126. The width of the center 128 may be smaller than the width of the other side 127.

[0036] The chemical gas detection sensor 124 may be installed in the drainage path 125 installed in the third area A3 of the purification unit 120. The chemical gas detection sensor 124 may be installed in the center 128 of the drainage path 125, but is not limited thereto. The chemical gas detection sensor 124 may be installed in the area having the smallest width in the drainage path 125.

[0037] The chemical gas detection sensor 124 may measure the chemical gas 50 sucked by the suction fan 121 described later. The chemical gas detection sensor 124 may measure the concentration of the chemical gas 50.

[0038] The particle sensor 123 may be installed in the drainage path 125 installed in the third area A3 of the purification unit 120. The particle sensor 123 may be installed in the center 128 of the drainage path 125, but is not limited thereto. The particle sensor 123 may be installed in the area having the smallest width in the drainage path 125.

[0039] The particle sensor 123 may measure the particles 60 sucked by the suction fan 121. The particle sensor 123 may measure the concentration of the particles 60.

[0040] The suction fan 121 may be installed in the first area A1 of the purification unit 120 . The suction fan 121 may be installed at an end of the first area A1 , but is not limited thereto. The suction fan 121 may be formed at one side 126 of the guide path 125 .

[0041] The suction fan 121 may be installed on the first surface 111 of the main body unit 110. The center of the first surface 111 of the main body unit 110 may be opened so that the suction fan 121 may be exposed.

[0042] The suction fan 121 may be disposed on the same plane as the first surface 111 of the main body unit 110 , but is not limited thereto. The suction fan 121 may protrude from the first surface 111 of the main body unit 110 .

[0043] The suction fan 121 may include a single fan or a plurality of fans.

[0044] The suction fan 121 may include a motor. The suction fan 121 may use the motor to suck air. The suction fan 121 may suck particles 60 or chemical gases 50. When the suction fan 121 sucks air, the air may contain particles 60 or chemical gases 50. The suction fan 121 may move air from the first area A1 to the third area A3 and the second area A2.

[0045] When the suction fan 121 sucks the air containing the particles 60 and the chemical gas 50 , the particles 60 and the chemical gas 50 may move from the first area A1 to the third area A3 .

[0046] The chemical gas 50 may be measured by the chemical gas detection sensor 124 installed in the third area A3. The particles 60 may be measured by the particle sensor 123 installed in the third area A3.

[0047] The collecting unit 122 may be installed in the second area A2 of the purification unit 120 . The collecting unit 122 may be installed at an end of the second area A2 , but is not limited thereto. The collecting unit 122 may be installed at the other side 127 of the drainage path 125 .

[0048] The collecting unit 122 may be mounted on the second surface 112 of the main body unit 110. The center of the second surface 112 of the main body unit 110 is open so that the collecting unit 122 may be exposed. The collecting unit 122 may be disposed on the same plane as the second surface 112 of the main body unit 110, but is not limited thereto. The collecting unit 122 may protrude from the second surface 112 of the main body unit 110.

[0049] The chemical gas 50 may be sucked and moved to the first area A1, the third area A3, and the second area A2 by the suction fan 121, and may be filtered by the collecting unit 122. That is, the chemical gas 50 may be captured by the collecting unit 122.

[0050] The particles 60 may be sucked by the suction fan 121 and moved to the first area A1, the third area A3, and the second area A2, and may be filtered by the collecting unit 122. That is, the particles 60 may be captured by the collecting unit 122.

[0051] The collecting unit 122 may be a fan filter unit FFU.

[0052] The driving unit 130 may be installed in the main body unit 110. For example, the driving unit 130 may be installed on a lower portion of the main body unit 110.

[0053] The driving unit 130 may include wheels and a driving motor, etc. The wheels may be mounted on the lower portion of the main body unit 110. The driving unit 130 may be moved by rotating the wheels by the driving motor. The driving unit 130 may be driven inside a semiconductor production line.

[0054] The position sensor 115 may be installed in the main unit 110. Figure 1 , Figure 2 and Figure 4 , the position sensor 115 is shown to be installed on the upper surface of the main unit 110, but is not limited thereto.

[0055] The position sensor 115 may sense the position of the contaminant treatment device. For example, the position sensor 115 may sense the position of the contaminant treatment device disposed inside a semiconductor production line.

[0056] The position of the chemical gas 50 or the position of the particle 60 may be detected by the position sensor 115. When the chemical gas 50 and the particle 60 are measured by the chemical gas detection sensor 124 and the particle sensor 123, the positions of the chemical gas 50 and the particle 60 may be sensed by the position sensor 115.

[0057] The manipulator 200 may be installed on an upper surface of the body unit 110 .

[0058] The manipulator 200 may include a plurality of joints. The manipulator 200 may have n degrees of freedom (DOF). In some embodiments, the manipulator 200 may have three or more degrees of freedom.

[0059] The manipulator 200 may move in a first direction X, a second direction Y intersecting the first direction X, and a third direction Z intersecting the first direction X and the second direction Y. The first direction X, the second direction Y, and the third direction Z may be perpendicular to each other.

[0060] The suction unit 300 may be installed on an upper surface of the body unit 110. The suction unit 300 may be connected to the manipulator 200.

[0061] The suction unit 300 may include a suction cup 310 and a suction cable 320 .

[0062] The suction cup 310 may be connected to the manipulator 200. The suction cup 310 may be supported by the manipulator 200. The suction cup 310 may be driven to suck the chemical gas 50 or the particles 60.

[0063] The suction cable 320 may be connected to the main unit 110. Although not shown, the suction cable 320 may be connected to the purification unit 120 from within the main unit 110. The suction cable 320 may be connected to the suction cup 310 at one end and to the main unit 110 at the other end.

[0064] The suction cable 320 may be a passage through which the chemical gas 50 or the particles 60 sucked by the suction cup 310 moves. The chemical gas 50 or the particles 60 sucked by the suction cup 310 may be captured into the collection unit 122 through the suction cable 320.

[0065] The exhaust device 150 may be installed inside a semiconductor production line. The exhaust device 150 may include a pipeline and a suction unit.

[0066] The pollutant treatment device may be connected to the exhaust device 150. The pollutant treatment device may be moved to the exhaust device 150 so that the chemical gas 50 and the particles 60 filtered out by the collection unit 122 may be removed through the exhaust device 150.

[0067] The pollutant treating device moves to the exhaust device 150 so that the chemical gas 50 and the particles 60 sucked by the suction cup 310 can be removed by the exhaust device 150 .

[0068] The chemical gas 50 and the particles 60 filtered out by the collecting unit 122 may be sucked into the suction unit and discharged to the outside through the pipeline.

[0069] The distance control sensor 400 may be installed at one side of the main unit 110. Figure 4 , the distance control sensor 400 is shown as being installed on one side other than the first surface 111 and the second surface 112 , but is not limited thereto. The distance control sensor 400 may be installed on the first surface 111 or the second surface 112 .

[0070] The distance between the main body unit 110 and another object may be controlled by the distance control sensor 400. For example, chemical gas 50 or particles 60 may exist in the process chamber. In order to remove the chemical gas 50 or particles 60, the contaminant treatment device may be moved to the front of the process chamber.

[0071] The distance between the process chamber and the pollutant treatment apparatus may be controlled by the distance control sensor 400. More specifically, the distance between the process chamber and the body unit 110 may be controlled by the distance control sensor 400.

[0072] At least one of the particle sensor 123 , the chemical gas detection sensor 124 , the position sensor 115 , the manipulator 200 , the suction unit 300 , the distance control sensor 400 , and the image processing unit 1500 may be controlled by the controller 1000 .

[0073] The controller 1000 may receive the concentration of the particles 60 from the particle sensor 123. The controller 1000 may receive the concentration of the chemical gas 50 from the chemical gas detection sensor 124.

[0074] Controller 1000 may receive position data from position sensor 115. Controller 1000 may receive from position sensor 115 the position of the pollutant treatment device.

[0075] The concentration of the chemical gas 50 and the concentration of the particles 60 according to the location within the semiconductor production line may be checked by the controller 1000 .

[0076] The concentration information of the particles 60 , the concentration information of the chemical gas 50 , and the position data of the particles 60 and the chemical gas 50 may be transmitted from the controller 1000 to the image processing unit 1500 .

[0077] The manipulator 200 may be controlled by the controller 1000 to move in the first direction X, the second direction Y, or the third direction Z. The suction unit 300 may be controlled by the controller 1000 to suck in the chemical gas 50 or the particles 60. In some embodiments, the manipulator 200 may be controlled by the controller 1000 to position the suction unit 300 on a process chamber inside a semiconductor production line. The suction unit 300 may be controlled by the controller 1000 to suck in the chemical gas 50 or the particles 60 exhausted from the process chamber.

[0078] Figures 6 to 9 is a diagram illustrating pollutant treatment operations of a pollutant treatment device according to some embodiments of the present disclosure.

[0079] Figure 6 The chemical gas 50 is measured by the chemical gas detection sensor 124, the position of the chemical gas 50 is measured by the position sensor 115, and the first map showing the chemical gas 50 is formed by the image processing unit 1500 ( Fig.12 3500) process.

[0080] refer to Figure 6 , chemical gases present in the semiconductor production line are measured by a chemical gas detection sensor ( S10 ).

[0081] When the suction fan 121 sucks the chemical gas 50, the chemical gas 50 may be measured by the chemical gas detection sensor 124 installed in the drainage path 125 of the purification unit 120 (see Figure 3 ).

[0082] Then, the chemical gas detection sensor transmits concentration data of the chemical gas 50 to the controller ( S20 ).

[0083] The controller 1000 receives the concentration data of the chemical gas 50 from the chemical gas detection sensor 124 and may determine whether the concentration of the chemical gas 50 is high or low. For example, the controller 1000 may determine whether the concentration of the chemical gas 50 is higher or lower than a threshold value set by a user.

[0084] Next, if the chemical gas concentration is higher than the reference value, the controller transmits an execution notification to the position sensor ( S30 ).

[0085] Then, the position sensor generates position data of the chemical gas ( S40 ).

[0086] The position of the chemical gas 50 measured by the chemical gas detection sensor 124 may be sensed by the position sensor 115. Thus, the position of the pollutant treatment device may be sensed.

[0087] Next, the position sensor sends chemical gas position data to the controller ( S50 ).

[0088] Then, the controller transmits the chemical gas concentration data and the chemical gas position data to the image processing unit ( S60 ).

[0089] Next, the image processing unit forms a first map based on the chemical gas concentration data and the chemical gas position data provided from the controller ( S70 ).

[0090] First Map ( Fig.12 The first map 3500 may be a map showing the concentration and location of the chemical gas 50. Fig.10 and Fig.11 The description of the first map 3500 is described in more detail.

[0091] Figure 7 1 shows that the chemical gas detection sensor 124 and the particle sensor 123 measure the chemical gas 50 and the particle 60, the position sensor 115 measures the position of the chemical gas 50 and the position of the particle 60, and the image processing unit 1500 forms a first map showing the chemical gas 50 and the particle 60. Fig.12 3500) process.

[0092] refer to Figure 7 , chemical gas is measured in a semiconductor production line by a chemical gas detection sensor ( S10 ), and particles in the semiconductor production line are measured by a particle sensor ( S11 ).

[0093] The chemical gas 50 and the particles 60 may be measured by the chemical gas detection sensor 124 and the particle sensor 123 installed in the drainage path 125 of the purification unit 120 (see Figure 3 ).

[0094] Then, the chemical gas detection sensor and the particle sensor transmit chemical gas concentration and particle concentration data to the controller ( S21 ).

[0095] The controller 1000 receives the concentration of the chemical gas 50 and the concentration of the particles 60 from the chemical gas detection sensor 124 and the particle sensor 123, and can determine whether the concentration is high or low. For example, it can be determined whether the concentration of the chemical gas 50 is higher or lower than a reference value set by the user. In addition, it can be determined whether the concentration of the particles 60 is higher or lower than a threshold value set by the user.

[0096] If the chemical gas concentration and the particle concentration are higher than the reference value, the controller transmits an execution notification to the position sensor ( S31 ).

[0097] Then, the position sensor generates chemical gas position and particle position data ( S41 ).

[0098] The position of the chemical gas 50 measured by the chemical gas detection sensor 124 and the position of the particle 60 measured by the particle sensor 123 may be sensed by the position sensor 115. Therefore, the position of the pollutant treatment device may be sensed.

[0099] Next, the position sensor sends chemical gas and particle position data to the controller ( S51 ).

[0100] Then, the controller transmits the chemical gas concentration and position data and the particle concentration and position data to the image processing unit ( S61 ).

[0101] Then, the image processing unit forms a first map based on the chemical gas concentration and position data and the particle concentration and position data provided from the controller ( S70 ).

[0102] Figure 8 1 is a diagram showing a process of measuring the chemical gas 50 by the chemical gas detection sensor 124, sensing the position of the chemical gas 50 by the position sensor 115, and processing the chemical gas 50 by the manipulator 200 and the suction unit 300. Figure 6 Any part of the description is repeated.

[0103] refer to Figure 8 , the chemical gas detection sensor measures the chemical gas in the semiconductor production line (S10) and sends the chemical gas concentration data to the controller (S20). Then, if the chemical gas concentration is higher than the reference value, the controller sends an execution notification to the position sensor (S30). Then, the position sensor generates the chemical gas position data (S40) and sends the chemical gas position data to the controller (S50).

[0104] Then, the controller sends an execution notification to the manipulator ( S60 ).

[0105] Next, the manipulator moves the suction unit to the position of the chemical gas ( S65 ).

[0106] The manipulator 200 may move in the first direction X, the second direction Y, or the third direction Z. For example, the manipulator 200 may have three or more degrees of freedom. Since the suction unit 300 is connected to the manipulator 200, the manipulator 200 may move the suction unit 300 to a location where the chemical gas 50 exists.

[0107] Then, the suction unit captures the chemical gas (S75).

[0108] The suction unit 300 may suck in air. The chemical gas 50 may be sucked in and captured by the suction unit 300. The chemical gas 50 may be captured by the suction unit 300 so that the inside of the semiconductor production line may be purified.

[0109] Fig. 9 1 is a diagram showing a process of measuring the chemical gas 50 and the particles 60 by the chemical gas detection sensor 124 and the particle sensor 123, sensing the positions of the chemical gas 50 and the particles 60 by the position sensor 115, and processing the chemical gas 50 and the particles 60 by the manipulator 200 and the suction unit 300. For the convenience of explanation, the following description will be briefly described or omitted. Figure 7 Any descriptions that are repeated in those described in .

[0110] refer to Fig. 9 , the chemical gas detection sensor and the particle sensor measure the chemical gas and particles in the semiconductor production line respectively (S10, S11). Then, the chemical gas detection sensor and the particle sensor send the chemical gas concentration and particle concentration data to the controller (S21). Then, the controller sends an execution notification to the position sensor (S31). Then, the position sensor generates the chemical gas position and particle position data (S41), and sends the chemical gas position and particle position data to the controller (S51). Then, the controller sends an execution notification to the manipulator (S60).

[0111] Next, the manipulator moves the suction unit to the location of the chemical gas and particles ( S66 ).

[0112] The suction unit 300 may be position-controlled by the manipulator 200. The manipulator 200 may move the suction unit 300 to a position where the chemical gas 50 and the particles 60 exist, so that the suction unit 300 may properly suck up the chemical gas 50 and the particles 60.

[0113] Next, the suction unit captures chemical gas and particles ( S76 ).

[0114] The inside of the semiconductor production line may be purified by the suction unit 300 sucking up the chemical gas 50 and the particles 60 .

[0115] Figures 10 to 12 is a diagram for illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0116] refer to Fig.10 In some embodiments, a contamination treatment device may travel at a semiconductor production line 3000 . Fig.10 It may be a map of the semiconductor production line 3000 .

[0117] The semiconductor production line 3000 may include a first area A1, a second area A2, a third area A3, and a fourth area A4. A semiconductor process chamber C may be installed in each of the areas A1, A2, A3, and A4.

[0118] A plurality of pollutant treatment devices 1, 2, 3, and 4 may roam around the semiconductor production line 3000. In some embodiments, the first pollutant treatment device 1 may measure and capture chemical gases 50 and particles 60 present in the first area A1 to purify the first area A1. The second pollutant treatment device 2 may measure and capture chemical gases 50 and particles 60 present in the second area A2 to purify the second area A2. The third pollutant treatment device 3 and the fourth pollutant treatment device 4 may measure and capture chemical gases 50 and particles 60 present in the third area A3 and the fourth area A4 to purify the third area A3 and the fourth area A4.

[0119] In some embodiments, the first pollutant treatment device 1 can check the concentration of the chemical gas 50 and the concentration of the particles 60 by using the chemical gas detection sensor 124 and the particle sensor 123 while patrolling in the first area A1. The second pollutant treatment device 2 can check the concentration of the chemical gas 50 and the concentration of the particles 60 by using the chemical gas detection sensor 124 and the particle sensor 123 while patrolling in the second area A2. The third pollutant treatment device 3 and the fourth pollutant treatment device 4 can check the concentration of the chemical gas 50 and the concentration of the particles 60 while patrolling in the third area A3 and the fourth area A4, respectively.

[0120] In some embodiments, the first pollutant treatment device 1 can inspect and capture chemical gases 50 and particles 60 in the first area A1. The second pollutant treatment device 2 can inspect and capture chemical gases 50 and particles 60 in the second area A2. The third pollutant treatment device 3 and the fourth pollutant treatment device 4 can inspect and capture chemical gases 50 and particles 60 in the third area A3 and the fourth area A4, respectively.

[0121] In some embodiments, each of the pollutant treatment devices 1, 2, 3, and 4 can be moved to each area A1, A2, A3, and A4 of the semiconductor production line 3000. For example, the first pollutant treatment device 1 can filter out the chemical gas 50 and the particles 60 in the first area A1 to purify the first area A1. The first pollutant treatment device 1 can measure the chemical gas 50 and the particles 60. Thereafter, the first pollutant treatment device 1 can be moved to the second area A2 to purify and measure the chemical gas 50 and the particles 60.

[0122] The first pollutant treatment device 1, the second pollutant treatment device 2, the third pollutant treatment device 3 and the fourth pollutant treatment device 4 can communicate with each other.

[0123] The controller 1000 may receive the concentration of the chemical gas 50 and the position data of the chemical gas 50 of each area A1 , A2 , A3 , and A4 from each of the pollutant treatment equipments 1 , 2 , 3 , and 4 .

[0124] The concentration of the particles 60 in each of the areas A1 , A2 , A3 , and A4 and the position data of the particles 60 may be provided to the controller 1000 from each of the pollutant treatment devices 1 , 2 , 3 , and 4 .

[0125] Fig.11 yes Fig.10 A magnified view of part Q. Fig.11 , chemical gas 50 and particles 60 may exist in the process chamber C.

[0126] The contamination treatment apparatus can measure the chemical gas 50 and particles 60 existing on the process chamber C while roaming inside the semiconductor production line. When the positions of the chemical gas 50 and particles 60 are sensed, the suction unit 300 can be moved to the process chamber C using the manipulator 200. The suction unit 300 can purify the process chamber C by sucking the chemical gas 50 and particles 60 existing on the process chamber C.

[0127] refer to Fig.12 , the image processing unit 1500 may receive the concentration of the chemical gas 50 and the position data of the chemical gas 50 in each of the areas A1, A2, A3, and A4 from the controller 1000. The image processing unit 1500 may receive the concentration of the particles 60 and the position data of the particles 60 in each of the areas A1, A2, A3, and A4 from the controller 1000.

[0128] The image processing unit 1500 may form a first map 3500 showing the positions of the chemical gas 50 and the particles 60 existing in each of the areas A1, A2, A3, and A4.

[0129] According to the first map 3500, the leakage area of ​​the chemical gas 50 and the location where the particles 60 exist within the semiconductor production line 3000 can be identified. The number of particles 60 existing in each of the areas A1, A2, A3, and A4 can be determined through the first map 3500. The first map 3500 can determine whether the chemical gas 50 is leaking from each of the areas A1, A2, A3, and A4.

[0130] The first map 3500 may be used to determine whether to add more pollutant treatment equipment. The first map 3500 may allow personnel to enter and treat the particles 60 and chemical gases 50.

[0131] Semiconductor components are manufactured through various processes in a clean room equipped with a manufacturing line. During the semiconductor manufacturing process in the clean room, particles or harmful chemical gases may be emitted. Therefore, the semiconductor production line may require a purification process. Conventional particle sensors and chemical gas detection sensors are designed for pipe or wall mounting and therefore cannot be measured and purified in a standby state. Therefore, when particles or chemical gases are generated, they must be handled and purified by personnel.

[0132] However, the pollutant treatment device according to some embodiments of the present disclosure may include a main unit 110, a purification unit 120, a driving unit 130, a position sensor 115, a manipulator 200, a suction unit 300, a distance control sensor 400, an image processing unit 1500 and a controller 1000.

[0133] The contamination treatment equipment may move around the semiconductor production line 3000. The contamination treatment equipment may continuously measure and purify the particles 60 or the chemical gas 50 using the purification unit 120.

[0134] Specifically, the particles 60 and the chemical gas 50 may be sucked in by the suction fan 121. The sucked particles 60 and the chemical gas 50 may be filtered by the collection unit 122. In this way, the particles 60 and the chemical gas 50 may be continuously measured, and the inside of the semiconductor production line may be purified by moving the pollutant treatment equipment around the semiconductor production line 3000. The positions of the particles 60 and the chemical gas 50 may be sensed by the position sensor 115. When the positions of the particles 60 and the chemical gas 50 are sensed, the manipulator 200 may move the suction unit 300 to the position where the particles 60 and the chemical gas 50 are present. The particles 60 and the chemical gas 50 may be sucked in by the suction unit 300. Therefore, the particles 60 and the chemical gas 50 may be removed, and the inside of the semiconductor production line may be purified.

[0135] The position data of the particles 60 and the chemical gas 50 may be provided to the controller 1000 from the position sensor 115. A first map 3500 showing the concentration and position of the particles 60 and the concentration and position of the chemical gas 50 may be formed by the image processing unit 1500. The distribution of the particles 60 and the concentration of the particles 60 may be identified through the first map 3500. The first map 3500 may identify the distribution of the chemical gas 50 and whether the chemical gas 50 is leaking. With reference to the first map 3500, a contaminant treatment device may be additionally installed in the semiconductor production line 3000, or a person may manually enter and treat the particles 60 or the chemical gas 50.

[0136] As described above, the contaminant treatment device can purify the semiconductor production line 3000 by continuously moving around the semiconductor production line 3000 and filtering the particles 60 or the chemical gas 50. The contaminant treatment device can directly suck up and remove the particles 60 and the chemical gas 50 using the manipulator 200 and the suction unit 300. Additionally, the first map 3500 can be formed to determine the location and concentration of the particles 60 and the chemical gas 50 through the areas A1, A2, A3, and A4 of the semiconductor production line 3000.

[0137] Fig.13 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure. Figures 1 to 5 The content described in the content is duplicate content.

[0138] refer to Fig.13 , the purification unit 120 may include a drainage path 125, a suction fan 121, a collection unit 122, a chemical gas detection sensor 124, and a particle sensor 123. The purification unit 120 may include a first area A1, a second area A2, and a third area A3.

[0139] The drainage path 125 may be installed in the third area A3. The drainage path 125 may include one side 126, a center 128, and another side 127. The width W1 of the drainage path 125 may be constant. For example, the width W1 of the drainage path 125 may be constant from one side 126 to the center 128 and from the center 128 to the other side 127.

[0140] The particle sensor 123 may be installed on an upper portion of the drainage path 125. The chemical gas detection sensor 124 may be installed at a lower end of the drainage path 125. The particle sensor 123 and the chemical gas detection sensor 124 may be installed in the center 128, but are not limited thereto.

[0141] Fig.14 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure. Figures 1 to 5 Content that overlaps with the content described in .

[0142] refer to Fig.14 , the purification unit 120 may include a first area A1, a second area A2, and a third area A3. The width may narrow as the purification unit 120 goes from the first area A1 to the second area A2. For example, the width W_A1 of the first area A1 may be greater than the width W_A3 of the third area A3. The width W_A3 of the third area A3 may be greater than the width W_A2 of the second area A2.

[0143] Fig.15 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure. Figures 1 to 5 Content that overlaps with the content described in .

[0144] refer to Fig.15 The pollutant treatment apparatus may include a main body unit 110 , a purification unit 120 , a driving unit 130 , a position sensor 115 , a manipulator 200 , a suction unit 300 , and a distance control sensor 400 .

[0145] The suction unit 300 may include a suction cup 310 and a suction cable 320. The suction cup 310 may have a square shape or a rectangular shape, but is not limited thereto. The shape of the suction cup 310 may vary depending on the intended use.

[0146] Fig.16 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure. Figures 1 to 5 Content that overlaps with the content described in .

[0147] The pollutant treatment apparatus may include a main body unit 110 , a purification unit 120 , a driving unit 130 , a position sensor 115 , a suction unit 300 , a rotation unit 330 , and a distance control sensor 400 .

[0148] and Figures 1 to 5 Unlike those shown, the pollutant treating device may not include a manipulator.

[0149] The suction unit 300 may include a suction cup 310 and a suction cable 320 .

[0150] The suction cable 320 may have a plurality of strips 323 connected by a first length adjustment node 321 and a second length adjustment node 322. The suction cable 320 may have a length that is adjusted by the first length adjustment node 321 and the second length adjustment node 322. For example, the horizontal length of the suction cable 320 may be adjusted by the first length adjustment node 321. The suction cable 320 may be adjusted in vertical length by the second length adjustment node 322.

[0151] The rotating unit 330 may be installed on the upper surface of the main body unit 110. The rotating unit 330 may be connected to the suction cable 320. The rotating unit 330 may rotate 360 ​​degrees to rotate the suction unit 300.

[0152] Fig.17 is a diagram illustrating a pollutant treatment method according to some embodiments of the present disclosure.

[0153] A pollutant treatment device can be provided, which includes: a main body unit 110, including different first surfaces 111 and second surfaces 112; a driving unit 130, installed in the main body unit 110, and configured to drive inside the semiconductor production line; a position sensor 115, installed in the main body unit 110, and configured to sense the position inside the semiconductor production line; a purification unit 120, installed to penetrate the first surface 111 and the second surface 112, having a drainage path 125 arranged between the first surface 111 and the second surface 112, a chemical gas detection sensor 124 and a particle sensor 123 installed in the drainage path 125, and a purification unit 120 installed in the first area A1 and sucking in the chemical gas The invention also provides a suction fan 121 for collecting the chemical gas 50 and the particles 60, and a collecting unit 122 installed in the second area A2 and filtering the chemical gas 50 and the particles 60; a manipulator 200 installed on the upper surface of the main body unit 110 and moving in a first direction, a second direction intersecting the first direction, and a third direction intersecting the first direction and the second direction; a suction unit 300 installed on the upper surface of the main body unit 110 and connected to the manipulator 200; a controller 1000 receiving the chemical gas concentration and the particle concentration from the chemical gas detection sensor 124 and the particle sensor 123, and controlling the manipulator 200 and the suction unit 300; and an image processing unit 1500 forming a map of the semiconductor production line (see Figures 1 to 5 ).

[0154] refer to Fig.17 The chemical gas detection sensor and the particle sensor respectively measure the chemical gas and particles existing in the first area and the second area of ​​the semiconductor production line ( S100 ).

[0155] The interior of the semiconductor production line 3000 may include a first area A1 and a second area A2. The first pollutant treatment equipment may measure the chemical gas 50 and the particles 60 in the first area A1 using the chemical gas detection sensor 124 and the particle sensor 123. The second pollutant treatment equipment may measure the chemical gas 50 and the particles 60 in the second area A2 using the chemical gas detection sensor 124 and the particle sensor 123.

[0156] Then, the position sensor senses the positions of the chemical gas and particles existing in the first region and the second region ( S200 ).

[0157] The position sensor 115 senses the positions of the chemical gas 50 and the particles 60 existing in the first area A1 and the second area A2 and may transmit position data to the controller 1000 .

[0158] Then, the manipulator moves the suction unit to the location of the chemical gas and particles ( S300 ).

[0159] The controller 1000 may move the manipulator 200 to move the suction unit 300 to a position where the chemical gas 50 and the particles 60 exist.

[0160] Next, the suction unit captures chemical gas and particles (S400).

[0161] The suction unit 300 can capture and remove the chemical gas 50 and the particles 60. The chemical gas 50 and the particles 60 are captured by the suction unit 300, so that the inside of the semiconductor production line can be purified. In other words, the contamination inside the semiconductor production line can be managed.

[0162] Although the embodiment of the present disclosure has been described above with reference to the accompanying drawings, the present disclosure may not be limited to the embodiment and may be implemented in various different forms. A person of ordinary skill in the technical field to which the present disclosure belongs will be able to understand that the present disclosure may be implemented in other specific forms without changing the technical concept or essential features of the present disclosure. Therefore, it should be understood that the embodiments described above are not restrictive in all aspects, but illustrative.

Claims

1. A pollutant treatment device, comprising: Main unit; A driving unit, mounted on the main unit and configured to drive inside a semiconductor production line; a manipulator mounted on an upper surface of the main unit and comprising a plurality of joints; a suction unit mounted on the upper surface of the main body unit and connected to the manipulator; as well as A controller controls the manipulator to position the suction unit on a process chamber inside the semiconductor production line, and controls the suction unit to suck chemical gas exhausted from the process chamber.

2. The pollutant treatment device according to claim 1, in, The main body unit comprises a first surface and a second surface which are different from each other. The pollutant treatment equipment also includes: a position sensor installed in the main unit and sensing a position within the semiconductor production line; and a purification unit installed in the main unit and installed to penetrate the first surface and the second surface, wherein the purification unit includes: a drainage path disposed between the first surface and the second surface, a chemical gas detection sensor for measuring the chemical gas flowing in through the first surface, wherein the chemical gas detection sensor is installed in the drainage path, The controller receives the concentration of the chemical gas from the chemical gas detection sensor and receives position data from the position sensor to check the concentration of the chemical gas according to the position within the semiconductor production line.

3. The pollutant treatment device according to claim 2, further comprising: a first area disposed between one side of the drainage path and the first surface and having a width greater than a maximum width of the drainage path, a second region disposed between the other side of the drainage path and the second surface and having a width greater than a maximum width of the drainage path, a suction fan installed in the first area and sucking the chemical gas, a collecting unit installed in the second area and filtering the chemical gas, Wherein, the chemical gas detection sensor is arranged between the suction fan and the collection unit.

4. The pollutant treatment device according to claim 2, in, The drainage path includes one side, a center and another side, The width of the center is smaller than the width of the one side and the width of the other side.

5. The pollutant treatment device according to claim 4, in, The width of the drainage path gradually decreases from the one side to the center, and gradually increases from the center to the other side, Wherein, the chemical gas detection sensor is installed at the center of the drainage path.

6. The pollutant treatment device according to claim 1, in, The suction unit comprises: a suction cup connected to the manipulator and sucking the chemical gas; and A suction cable is connected to the suction cup and the main unit and is a passage through which the sucked chemical gas moves.

7. The pollutant treatment device according to claim 1, further comprising: A distance control sensor is installed on one side of the main unit. The distance control sensor controls the distance between the process chamber where the chemical gas exists and the main unit.

8. The pollutant treatment device according to claim 2, further comprising: A collecting unit is installed on the other side of the drainage path and filters the chemical gas, Wherein, the discharge equipment is installed inside the semiconductor production line, The pollutant treating device moves to the exhaust device, and removes the chemical gas collected in the collecting unit through the exhaust device.

9. The pollutant treatment device according to claim 2, in, The pollutant treatment equipment performs the following operations: While inspecting the semiconductor production line, the chemical gas detection sensor is used to check the concentration of the chemical gas. using the position sensor to sense the position of the chemical gas, using the manipulator to move the suction unit to the position of the chemical gas, and The chemical gas is captured using the suction unit.

10. The pollutant treatment device according to claim 9, in, The semiconductor production line includes different first and second areas. A first pollutant treatment device measures and captures the chemical gas while patrolling within the first area, A second pollutant treatment device measures and captures the chemical gas while patrolling within the second area, Wherein, the first pollutant treatment device and the second pollutant treatment device communicate with each other.

11. The pollutant treatment device according to claim 10, in, The controller further includes an image processing unit, which performs the following operations: receiving data related to the concentration of the chemical gas and the location of the chemical gas in the first area from the first pollutant treatment device, receiving data related to the concentration of the chemical gas in the second area and the location of the chemical gas from the second pollutant treatment device, and Data related to the concentration of the chemical gas and the location of the chemical gas is received from the controller, and a first map indicating the location of the chemical gas present in the first area and the second area is formed.

12. The pollutant treatment device according to claim 2, in, The purification unit further includes a particle sensor installed in the drainage path and measuring particles flowing in through the first surface. The controller performs the following operations: controlling the particle sensor to measure the particles, controlling the position sensor to sense the position of the particle, controlling the manipulator to control the suction unit to be positioned at the location of the particle, and The suction unit is controlled to suck the particles.

13. A pollutant treatment device, comprising: A main body unit including a first surface and a second surface that are different; a driving unit installed in the main unit and configured to drive inside the semiconductor production line; a position sensor installed in the main unit and configured to sense a position within the semiconductor production line; a purification unit installed in the main unit and configured to penetrate the first surface and the second surface, wherein the purification unit comprises: A suction fan is installed in the first area and sucks in particles and chemical gases, a collecting unit installed in the second area and filtering the particles and the chemical gas, a particle sensor for measuring the particles and a chemical gas detection sensor for measuring the chemical gas, wherein the particle sensor and the chemical gas detection sensor are installed in a third area between the first area and the second area, and A drainage path is provided in the third area, a manipulator mounted on an upper surface of the main unit and comprising a plurality of joints; a suction unit mounted on the upper surface of the main body unit and connected to the manipulator; and A controller controls the manipulator to position the suction unit on a process chamber inside the semiconductor production line, and controls the suction unit to suck the chemical gas and the particles existing on the process chamber.

14. The pollutant treatment device according to claim 13, in, The drainage path includes one side, a center and another side, The width of the center is smaller than the width of the one side and the width of the other side, Wherein, the particle sensor and the chemical gas detection sensor are installed in the center of the drainage path.

15. The pollutant treatment device according to claim 14, wherein: The width of the drainage path gradually decreases from the one side toward the center, and gradually increases from the center toward the other side.

16. The pollutant treatment device according to claim 13, in, The pollutant treatment equipment performs the following operations: During inspection in the semiconductor production line, the chemical gas detection sensor and the particle sensor are used to check the concentration of the chemical gas and the particles. using the position sensor to sense the positions of the chemical gas and the particles, using the manipulator to move the suction unit to the position of the chemical gas and the particles, and The chemical gas and the particles are captured using the suction unit.

17. The pollutant treatment device according to claim 16, The discharge equipment is installed inside the semiconductor production line. in, The pollutant treatment device moves to the exhaust device, and removes the chemical gas and the particles captured by the suction unit through the exhaust device.

18. The pollutant treatment device according to claim 13, further comprising: A distance control sensor is installed on one side of the main unit. The distance control sensor controls the distance between the process chamber where the chemical gas exists and the main unit.

19. The pollutant treatment device according to claim 13, in, The semiconductor production line includes different first and second areas. A first pollutant treatment device measures and captures the chemical gas and the particles while patrolling within the first area, A second pollutant treatment device measures and captures the chemical gas and the particles while patrolling within the second area, The controller performs the following operations: receiving, from the first pollutant treatment device, data on the concentration of the chemical gas and the position of the chemical gas in the first area, and data on the concentration of the particles and the position of the particles, and The concentration data of the chemical gas and the position data of the chemical gas in the second area, and the concentration data of the particles and the position data of the particles are received from the second pollutant treatment device.

20. A pollutant treatment device, comprising: A main body unit including a first surface and a second surface that are different; a driving unit installed in the main unit and configured to drive inside the semiconductor production line; a position sensor installed in the main unit and configured to sense a position within the semiconductor production line; a purification unit installed in the main unit and configured to penetrate the first surface and the second surface, wherein the purification unit comprises: a suction fan, installed in the first area, and sucking in the chemical gas, a collecting unit installed in the second area and filtering the chemical gas, a drainage path installed in a third area between the first area and the second area and having one side, a center and another side, and a chemical gas detection sensor for measuring the chemical gas, installed in the center of the drainage path, a manipulator mounted on an upper surface of the main unit and comprising a plurality of joints; a suction unit installed on the upper surface of the main unit and connected to the manipulator, wherein the suction unit includes a suction cup and a suction cable, the suction cup is used to suck the chemical gas, the suction cable is connected to the suction cup and the main unit, and the sucked chemical gas moves through the suction cable; a distance control sensor installed at one side of the main unit and controlling a distance between a process chamber exhausting the chemical gas and the main unit; and a controller that receives the concentration of the chemical gas from the chemical gas detection sensor, receives position data from the position sensor, checks the concentration of the chemical gas according to the position within the semiconductor production line, and controls the manipulator and the suction unit, The controller performs the following operations: using the chemical gas detection sensor to check the concentration of the chemical gas, using the position sensor to sense the position of the chemical gas, using the manipulator to move the suction unit to the position of the chemical gas, and The suction unit is controlled to suck the chemical gas.

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