Flexible AgBiS2 solar cell based on metal grid electrode

Abstract

The invention discloses a flexible AgBiS2 solar cell based on a metal grid electrode, and relates to the field of solar cells, and the flexible AgBiS2 solar cell comprises the following structures: a flexible substrate which is made of a transparent polymer and a metal grid electrode and is prepared by a micro-nano processing technology or an addition method, the material is a metal zinc oxide layer and a bismuth sulfide silver layer which have high conductivity, flexibility and corrosion resistance, serve as a light absorption layer, a polymer layer and a hole transport layer and are mainly used for promoting hole transport and reducing interface defects, the molybdenum oxide silver oxide layer serves as an electrode and is used for conducting holes and promoting hole transport, and the silver thickness is-nm. The method is used for providing good conductivity.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a flexible AgBiS based on a metal grid electrode. 2 Solar cell. Background Art

[0002] At present, solar cells, as a clean energy technology, play an important role in the field of energy conversion. Traditional rigid solar cells cannot achieve functions such as bending and folding due to the limitations of substrate and electrode materials, which seriously restricts them in emerging fields such as flexible electronic devices, wearable devices, and bendable displays.

[0003] Metal grid electrode is a new type of electrode material that has rapidly emerged in the field of photovoltaic and flexible electronic devices in recent years. It has excellent light transmittance, conductivity and mechanical flexibility, and can be well used in the preparation of flexible photovoltaic devices. Therefore, combining metal grid electrode with AgBiS2 material to prepare flexible AgBiS2 solar cells can effectively improve the flexibility and stability of the device and expand its application field. Summary of the invention

[0004] In view of the shortcomings of the prior art, the present invention solves the technical problems by adopting the following technical solutions: the present invention discloses a flexible AgBiS based on a metal grid electrode. 2 A solar cell comprises the following structure: a flexible substrate, the material of which is a transparent polymer, the transparent polymer is selected from polyimide PI, polyethylene terephthalate PET or polyethylene naphthalate PEN, the flexible substrate has high flexibility and heat resistance, and can provide good mechanical support and light transmittance;

[0005] The metal grid electrode is prepared by micro-nano processing technology or additive method, and its material is a metal with high conductivity, flexibility and corrosion resistance, and the metal is selected from silver Ag, copper Cu or gold Au, and is preferably metal copper. The width of the metal grid electrode is 5-10 μm, the spacing is 100-300 μm, and its pattern design ensures good light transmittance and conductivity;

[0006] The zinc oxide layer, as an electron transport layer, has a thickness of 50-70 nm, and is preferably prepared by a nanoparticle spin coating method. The zinc oxide layer can effectively promote charge injection and transport without affecting the light transmittance of the device;

[0007] The bismuth silver sulfide layer, as a light absorption layer, has a thickness of 30-50 nm to ensure maximum light absorption and avoid an increase in charge transfer resistance, and the uniformity of the material needs to be controlled, preferably using a self-assembly method to deposit the thin film;

[0008] The polymer layer, as a hole transport layer, has a thickness of 8-15 nm, and its main function is to promote hole transport, reduce interface defects, and improve device stability and photoelectric conversion efficiency, and is preferably polybenzodithiophene-fluorinated thiophene PTB;

[0009] The molybdenum oxide and silver oxide layers are used as electrodes to conduct holes, wherein the thickness of the molybdenum oxide is 2-5 nm to promote hole transport, and the thickness of the silver is 100-150 nm to provide good conductivity.

[0010] Preferably, the pattern shape of the metal grid electrode is a geometric shape that can ensure good light transmittance and conductivity, including but not limited to square, rectangle, hexagon or rhombus.

[0011] Preferably, the material uniformity control method of the bismuth silver sulfide layer includes but is not limited to using precise solution ratios, controlling process parameters such as deposition rate and temperature during thin film deposition by self-assembly method.

[0012] Preferably, a self-assembled monolayer is provided between the polymer layer and the bismuth silver sulfide layer, and a self-assembled monolayer is also provided between the molybdenum oxide silver oxide layer and the polymer layer.

[0013] Preferably, a layer of ultra-thin buffer material is provided between the metal grid electrode and the zinc oxide layer, and the buffer material is selected from aluminum oxide or titanium oxide nanolayers, and is used to improve the lattice matching between the metal and the oxide and reduce the interface state density.

[0014] Preferably, there are two metal grid electrodes, the metal grid electrode at the bottom uses a metal with good corrosion resistance but slightly poor conductivity as a support layer, and the metal grid electrode at the top uses a metal with high conductivity as a main conductive layer.

[0015] Preferably, a titanium oxide nanolayer is provided between the metal grid electrode and the zinc oxide layer.

[0016] Preferably, an organic polymer film is provided between the zinc oxide layer and the bismuth silver sulfide layer.

[0017] Preferably, the bottom of the flexible substrate is fixedly connected to a fiber material frame, the bottom of the fiber material frame is fixedly connected to a shell, the top of the shell is fixedly connected to a top cover, and the top of the top cover is fixedly connected to an electrical terminal.

[0018] The beneficial effects of the present invention are as follows:

[0019] 1. Using nanoparticle spin coating and self-assembled thin film methods, the manufacturing temperature is controlled below 150°C to ensure the molding of flexible devices.

[0020] 2. Combine non-toxic and abundant materials to effectively reduce production costs.

[0021] 3. The excellent light transmittance and conductivity of metal grid electrodes improve the flexibility of AgBiS 2 The overall performance of solar cells will expand their application potential in the photovoltaic field and provide new ideas for the development of efficient and flexible solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the structure of the present invention.

[0023] Figure 2 It is a structural schematic diagram of the present invention.

[0024] Figure 3 It is a structural schematic diagram of the present invention.

[0025] Figure 4 It is a structural schematic diagram of the present invention.

[0026] In the figure: 1. Flexible substrate; 2. Metal grid electrode; 3. Zinc oxide layer; 4. Bismuth silver sulfide layer; 5. Polymer layer; 6. Molybdenum oxide silver oxide layer; 7. Fiber material frame; 8. Titanium oxide nanolayer; 9. Organic polymer film; 10. Self-assembled monolayer; 11. Outer shell; 12. Top cover; 13. Power terminal. DETAILED DESCRIPTION

[0027] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The embodiments of the present invention are provided for the purpose of illustration and description, and are not intended to be exhaustive or to limit the present invention to the disclosed forms. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention, and to enable those of ordinary skill in the art to understand the present invention and thereby design various embodiments with various modifications suitable for specific uses.

[0028] Example, using Figure 1-Figure 4 A flexible AgBiS based on a metal grid electrode 2 according to an embodiment of the present invention 2 The solar cell is described below.

[0029] like Figure 1-Figure 4 As shown, a flexible AgBiS based on a metal grid electrode 2 of the present invention 2 The solar cell comprises the following structure: a flexible substrate 1, whose material is a transparent polymer, the transparent polymer is selected from polyimide PI, polyethylene terephthalate PET or polyethylene naphthalate PEN, the flexible substrate 1 has high flexibility and heat resistance, and can provide good mechanical support and light transmittance;

[0030] The metal grid electrode 2 is prepared by micro-nano processing technology or an additive method. The material is a metal with high conductivity, flexibility and corrosion resistance. The metal is selected from silver Ag, copper Cu or gold Au, and is preferably copper. The width of the metal grid electrode 2 is 5-10 μm, the spacing is 100-300 μm, and the pattern design ensures good light transmittance and conductivity;

[0031] The zinc oxide layer 3, as an electron transport layer, has a thickness of 50-70 nm, and is preferably prepared by a nanoparticle spin coating method. The zinc oxide layer 3 can effectively promote charge injection and transport without affecting the light transmittance of the device;

[0032] The bismuth silver sulfide layer 4, as a light absorption layer, has a thickness of 30-50 nm to ensure maximum light absorption and avoid an increase in charge transfer resistance, and the uniformity of the material needs to be controlled, preferably using a self-assembly method to deposit the thin film;

[0033] The polymer layer 5, as a hole transport layer, has a thickness of 8-15 nm, and its main function is to promote hole transport, reduce interface defects, and improve device stability and photoelectric conversion efficiency. It is preferably polybenzodithiophene-fluorinated thiophene PTB;

[0034] The molybdenum oxide and silver oxide layer 6 is used as an electrode for conducting holes, wherein the thickness of the molybdenum oxide is 2-5 nm to promote hole transport, and the thickness of the silver is 100-150 nm to provide good conductivity.

[0035] The pattern shape of the metal grid electrode 2 is a geometric shape that can ensure good light transmittance and conductivity, including but not limited to square, rectangle, hexagon or diamond. Computer simulation and experiments are used to verify which shape can achieve lower resistance loss at the same light transmittance, thereby improving the photoelectric conversion efficiency.

[0036] The material uniformity control method of the bismuth silver sulfide layer 4 includes, but is not limited to, using precise solution ratios and controlling process parameters such as deposition rate and temperature during the thin film deposition process using the self-assembly method.

[0037] A self-assembled monolayer 10 is arranged between the polymer layer 5 and the bismuth silver sulfide layer 4, and a self-assembled monolayer 10 is also arranged between the molybdenum oxide silver oxide layer 6 and the polymer layer 5. The self-assembled monolayer 10 can accurately regulate the energy level structure of the interface, promote the rapid transmission of holes, and reduce the efficiency loss caused by the accumulation of interface charges.

[0038] An ultra-thin buffer material is disposed between the metal grid electrode 2 and the zinc oxide layer 3. The buffer material is selected from an aluminum oxide or titanium oxide nanolayer 8 and is used to improve the lattice matching between the metal and the oxide and reduce the interface state density.

[0039] There are two metal grid electrodes 2. The bottom metal grid electrode 2 uses a metal with good corrosion resistance but slightly lower conductivity as a supporting layer, and the top metal grid electrode 2 uses a metal with high conductivity as the main conductive layer. This can improve the overall electrode stability while maintaining good conductivity.

[0040] A titanium oxide nanolayer 8 is provided between the metal grid electrode 2 and the zinc oxide layer 3. The titanium oxide nanolayer 8 can improve the lattice matching between the metal and the oxide, reduce the interface state density, thereby reducing the recombination probability of electrons at the interface and improving the charge transfer efficiency.

[0041] An organic polymer film 9 is provided between the zinc oxide layer 3 and the bismuth silver sulfide layer 4. The film can not only play an isolating and protective role, but also adjust the electric field distribution between the two layers to a certain extent and optimize the charge transfer path.

[0042] The bottom of the flexible substrate 1 is fixedly connected to a fiber material frame 7. The addition of the fiber material frame 7 greatly improves the mechanical strength and bending resistance of the entire solar cell without significantly increasing the overall weight and thickness, so that it can adapt to more severe usage environments. The bottom of the fiber material frame 7 is fixedly connected to an outer shell 11, the top of the outer shell 11 is fixedly connected to a top cover 12, and the top of the top cover 12 is fixedly connected to a power terminal 13.

[0043] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field and related fields without creative work should fall within the scope of protection of the present invention. The structures, devices and operating methods not specifically described and explained in the present invention are implemented according to the conventional means in the field unless otherwise specified and limited.

Claims

1. A flexible AgBiS2 solar cell based on a metal grid electrode (2), comprising, characterized in that: Includes the following structures: A flexible substrate (1), whose material is a transparent polymer, wherein the transparent polymer is selected from polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), and the flexible substrate (1) has high flexibility and heat resistance, and can provide good mechanical support and light transmittance; The metal grid electrode (2) is prepared by micro-nano processing technology or an additive method, and its material is a metal with high conductivity, flexibility and corrosion resistance, and the metal is selected from silver (Ag), copper (Cu) or gold (Au), and is preferably metal copper. The width of the metal grid electrode (2) is 5-10 μm, the spacing is 100-300 μm, and its pattern design ensures good light transmittance and conductivity; The zinc oxide layer (3), as an electron transport layer, has a thickness of 50-70 nm, and is preferably prepared by a nanoparticle spin coating method. The zinc oxide layer (3) can effectively promote charge injection and transport without affecting the light transmittance of the device; The bismuth silver sulfide layer (4) is used as a light absorption layer with a thickness of 30-50 nm to ensure maximum light absorption and avoid an increase in charge transfer resistance. The uniformity of the material needs to be controlled, and the thin film is preferably deposited by a self-assembly method; The polymer layer (5) is used as a hole transport layer with a thickness of 8-15 nm. Its main function is to promote hole transport, reduce interface defects, and improve device stability and photoelectric conversion efficiency. It is preferably polybenzodithiophene-fluorinated thiophene (PTB7); The molybdenum oxide and silver oxide layer (6) is used as an electrode for conducting holes, wherein the thickness of the molybdenum oxide is 2-5 nm to promote hole transport, and the thickness of the silver is 100-150 nm to provide good conductivity.

2. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: The pattern shape of the metal grid electrode (2) is a geometric shape that can ensure good light transmittance and conductivity, including but not limited to square, rectangle, hexagon or rhombus.

3. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: The material uniformity control method of the bismuth silver sulfide layer (4) includes, but is not limited to, using precise solution ratios and controlling process parameters such as deposition rate and temperature during the thin film deposition process using a self-assembly method.

4. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: A self-assembled monolayer (10) is provided between the polymer layer (5) and the bismuth silver sulfide layer (4), and a self-assembled monolayer (10) is also provided between the molybdenum oxide silver oxide layer (6) and the polymer layer (5).

5. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: A layer of ultra-thin buffer material is provided between the metal grid electrode (2) and the zinc oxide layer (3), and the buffer material is selected from an aluminum oxide or titanium oxide nanolayer (8) and is used to improve the lattice matching between the metal and the oxide and reduce the interface state density.

6. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: The number of the metal grid electrodes (2) is two. The metal grid electrode (2) at the bottom uses a metal with good corrosion resistance but slightly poor conductivity as a support layer, and the metal grid electrode (2) at the top uses a metal with high conductivity as a main conductive layer.

7. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: A titanium oxide nanolayer (8) is provided between the metal grid electrode (2) and the zinc oxide layer (3).

8. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: An organic polymer film (9) is arranged between the zinc oxide layer (3) and the bismuth silver sulfide layer (4).

9. A flexible AgBiS2 solar cell based on a metal grid electrode (2) according to claim 1, characterized in that: The bottom of the flexible substrate (1) is fixedly connected to a fiber material frame (7), the bottom of the fiber material frame (7) is fixedly connected to a housing (11), the top of the housing (11) is fixedly connected to a top cover (12), and the top of the top cover (12) is fixedly connected to an electrical terminal (13).

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