Display panel and display device

Abstract

The embodiment of the invention provides a display panel and a display device, relates to the technical field of display, and is used for improving the display quality of the display panel. The display panel comprises a plurality of light-emitting devices, and each light-emitting device comprises an anode, a hole injection layer, a light-emitting layer and a cathode which are arranged in sequence; the plurality of light-emitting devices includes: a blue light-emitting device, a green light-emitting device, and a red light-emitting device; wherein the hole injection layer comprises a first P-type doping part, a second P-type doping part and a third P-type doping part of which the doping concentrations are sequentially increased; the part of the hole injection layer located in the area where the red light-emitting device is located is a third P-type doping part, the part of the hole injection layer located in the area where the green light-emitting device is located is a second P-type doping part, and the part of the hole injection layer located in the area where the blue light-emitting device is located is a first P-type doping part; or the third P-type doping part, the first P-type doping part and the second P-type doping part are stacked in the direction away from the anode; the display panel is used for displaying images.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and in particular, to a display panel and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED for short) has been widely used in the display field due to its advantages of self-luminescence, low driving voltage, high luminous efficiency, fast response speed, and flexible display.

[0003] The booming development of OLED is only reflected in the small-size mobile phone field, while in the medium and large-size fields, the market share of OLED is still limited. With the continuous increase in size and the continuous improvement of Pixel Per Inch (PPI), the lateral conduction of current in sub-pixels of micro-display devices results in a reduction in color gamut at low current density, seriously affecting the display image quality. Summary of the Invention

[0004] The purpose of the embodiments of the present disclosure is to provide a display panel and a display device for suppressing current crosstalk between multiple light-emitting devices and improving the display quality of the display panel.

[0005] To achieve the above object, the embodiments of the present disclosure provide the following technical solutions:

[0006] On the one hand, a display panel is provided. The display panel includes: a plurality of light-emitting devices, and each light-emitting device includes: an anode, a cathode, a light-emitting layer located between the anode and the cathode, and a hole injection layer located between the anode and the light-emitting layer; the plurality of light-emitting devices include: a blue light-emitting device, a green light-emitting device, and a red light-emitting device; wherein, the hole injection layer includes: a first P-type doping portion, a second P-type doping portion, and a third P-type doping portion with gradually increasing doping concentrations; the portion of the hole injection layer located in the area where the red light-emitting device is located is the third P-type doping portion, the portion of the hole injection layer located in the area where the green light-emitting device is located is the second P-type doping portion, and the portion of the hole injection layer located in the area where the blue light-emitting device is located is the first P-type doping portion; or, the third P-type doping portion, the first P-type doping portion, and the second P-type doping portion are stacked in a direction away from the anode.

[0007] In the above display panel, the doping concentrations of the first P-type doping portion, the second P-type doping portion, and the third P-type doping portion increase in sequence, that is, the P-type doping concentrations of the blue light-emitting device, the green light-emitting device, and the red light-emitting device gradually increase, the HOMO orbit of the hole injection layer gradually becomes shallower, and the hole injection barriers of the blue light-emitting device, the green light-emitting device, and the red light-emitting device gradually decrease, resulting in differences in the internal resistances of the blue light-emitting device, the green light-emitting device, and the red light-emitting device, thereby suppressing the problem of current crosstalk, improving the color purity of the light-emitting device at low brightness, and improving the color gamut and display quality of the display panel.

[0008] Alternatively, the third P-type doping portion, the first P-type doping portion, and the second P-type doping portion are stacked in a direction away from the anode, that is, the doping concentration of the hole injection layer decreases and then increases in the direction away from the anode. In this way, the injection barrier between the hole injection layer and the hole transport layer can be effectively regulated to effectively regulate the resistance of the light-emitting device, improve the color crosstalk between multiple light-emitting devices at low current density, and improve the display quality of the display panel.

[0009] In some embodiments, when the portion of the hole injection layer in the region where the red light-emitting device is located is the third P-type doping portion, the portion of the hole injection layer in the region where the green light-emitting device is located is the second P-type doping portion, and the portion of the hole injection layer in the region where the blue light-emitting device is located is the first P-type doping portion, the difference range between the doping concentration of the first P-type doping portion and the doping concentration of the second P-type doping portion is 0.5% - 2.9%; the difference range between the doping concentration of the first P-type doping portion and the doping concentration of the third P-type doping portion is 4.5% - 9.9%; the difference range between the doping concentration of the second P-type doping portion and the doping concentration of the third P-type doping portion is 2% - 9%.

[0010] In some embodiments, the doping concentration range of the first P-type doping portion is 0.1% - 0.5%; the doping concentration range of the second P-type doping portion is 1% - 3%; the doping concentration range of the third P-type doping portion is 5% - 10%.

[0011] In some embodiments, when the third P-type doping portion, the first P-type doping portion, and the second P-type doping portion are stacked in a direction away from the anode, the thicknesses of the first P-type doping portion, the second P-type doping portion, and the third P-type doping portion are different.

[0012] In some embodiments, the ratio range of the sum of the thicknesses of the second P-type doping portion and the third P-type doping portion to the thickness of the first P-type doping portion is 0.9 - 1.1.

[0013] In some embodiments, the thickness of the second P-type doped portion is less than the thickness of the third P-type doped portion.

[0014] In some embodiments, the difference range between the doping concentration of the first P-type doped portion and the doping concentration of the second P-type doped portion is 0.5% to 1.9%; the difference range between the doping concentration of the first P-type doped portion and the doping concentration of the third P-type doped portion is 1.5% to 4.9%; the difference range between the doping concentration of the second P-type doped portion and the doping concentration of the third P-type doped portion is 0.1% to 4%.

[0015] In some embodiments, the doping concentration range of the first P-type doped portion is 0.1% to 0.5%; the doping concentration range of the second P-type doped portion is 1% to 2%; the doping concentration range of the third P-type doped portion is 2% to 5%.

[0016] In some embodiments, in the hole injection layer, the P-type doping material includes at least one of the materials represented by the following structural formulas.

[0017]

[0018]

[0019] On the other hand, a display device is provided. The display device includes the display panel as described in any of the above embodiments, and the display device further includes a driving chip for driving the display panel to display.

[0020] The above display device has the same structure and beneficial technical effects as the display panel provided in some of the above embodiments, and will not be described in detail herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings required to be used in some embodiments of the present disclosure will be briefly introduced below. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure, and those of ordinary skill in the art can also obtain other drawings based on these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual dimensions of the products, the actual processes of the methods, etc. involved in the embodiments of the present disclosure.

[0022] Figure 1 Structural diagram of a display device according to some embodiments of the present disclosure;

[0023] Figure 2 Structural diagram of a display panel according to some embodiments of the present disclosure;

[0024] Figure 3Structural diagram of another display panel according to some embodiments of the present disclosure;

[0025] Figure 4 Energy level diagram of a blue light-emitting device provided according to some embodiments of the present disclosure;

[0026] Figure 5 Energy level diagram of a green light-emitting device provided according to some embodiments of the present disclosure;

[0027] Figure 6 Energy level diagram of a red light-emitting device provided according to some embodiments of the present disclosure;

[0028] Figure 7 Structural diagram of a light-emitting device provided according to some embodiments of the present disclosure. Detailed implementation manners

[0029] The technical solutions in some embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings. Apparently, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments provided by the present disclosure fall within the scope of protection of the present disclosure.

[0030] Unless otherwise required by the context, the term "including" is interpreted as open and inclusive throughout the specification and claims, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples" or "some examples" etc. are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms are not necessarily referring to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0031] Hereinafter, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality" is two or more.

[0032] "At least one of A, B, and C" has the same meaning as "at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0033] "A and / or B" includes the following three combinations: only A, only B, and the combination of A and B.

[0034] As used herein, "about", "substantially" or "approximate" includes the stated value and the average value within an acceptable deviation range of the specific value, wherein the acceptable deviation range is determined by a person of ordinary skill in the art considering the measurement being discussed and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system).

[0035] As used herein, "parallel", "perpendicular", "equal" includes the stated situation and the situation similar to the stated situation, and the range of the similar situation is within an acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art considering the measurement being discussed and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallel and approximate parallel, and the acceptable deviation range of approximate parallel can be, for example, within 5° deviation; "perpendicular" includes absolute perpendicular and approximate perpendicular, and the acceptable deviation range of approximate perpendicular can also be, for example, within 5° deviation. "Equal" includes absolute equality and approximate equality, and the acceptable deviation range of approximate equality can be, for example, the difference between the two equal values is less than or equal to 5% of either one of them.

[0036] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can be that the layer or element is directly on the other layer or substrate, or there can also be an intermediate layer between the layer or element and the other layer or substrate.

[0037] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layer and the area of the region are enlarged for clarity. Therefore, variations in the shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Accordingly, exemplary embodiments should not be construed as being limited to the shape of the regions shown herein, but include shape deviations caused by, for example, manufacturing. For example, an etched region shown as rectangular will generally have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shape of the regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0038] Some embodiments of the present disclosure provide a display device 1000, which may be any device that displays whether it is moving (e.g., video) or stationary (e.g., still image), and whether it is text or image. More specifically, it is expected that the embodiments can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones (e.g., cell phones), wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rear view cameras in vehicles), electronic photos, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc. Figure 1 In the figure, the mobile phone is taken as an example of the display device 1000 for illustration.

[0039] Exemplarily, the display device 1000 may be an electroluminescent display device or a photoluminescent display device. When the display device 1000 is an electroluminescent display device, the electroluminescent display device may be an organic light-emitting diode (OLED) or a quantum dot light-emitting diode (QLED). When the display device 1000 is a photoluminescent display device, the photoluminescent display device may be a quantum dot photoluminescent display device. Hereinafter, some embodiments of the present disclosure will be schematically described by taking the display device 1000 as an OLED display device as an example. However, the embodiments of the present disclosure include but are not limited to this, and any other display device may also be considered as long as the same technical idea is applied.

[0040] Please continue to refer to Figure 1 As shown above, the display device 1000 includes a display panel 100.

[0041] As Figure 2 shown, the display panel 100 includes a plurality of light-emitting devices 10, and the light-emitting devices 10 include: an anode 11, a cathode 18, a light-emitting layer 15 located between the anode 11 and the cathode 18, and a hole injection layer 12 located between the anode 11 and the light-emitting layer 15.

[0042] Exemplarily, the light-emitting device 10 further includes: a hole transport layer 13, an electron blocking layer 14, a hole blocking layer 16, and an electron transport layer 17. The anode 11, the hole injection layer 12, the hole transport layer 13, the electron blocking layer 14, the light-emitting layer 15, the hole blocking layer 16, the electron transport layer 17, and the cathode 18 are sequentially stacked.

[0043] Exemplarily, the plurality of light-emitting devices 10 includes: a blue light-emitting device 10a, a green light-emitting device 10b, and a red light-emitting device 10c.

[0044] The light-emitting principle of the light-emitting device 10 is as follows: through the circuit connected by the anode 11 and the cathode 18, holes are injected into the light-emitting layer 15 by the anode 11, and electrons are injected into the light-emitting layer 15 by the cathode 18. The formed electrons and holes form excitons in the light-emitting layer 15, and the excitons return to the ground state through radiative transition, emitting photons.

[0045] The inventors found that due to the lateral conduction of current between the plurality of light-emitting devices 10, passive turn-on of the light-emitting device 10 will occur, affecting the color purity of the light-emitting device 10 at low brightness, resulting in a reduction in the color gamut of the display panel 100 and a relatively low display quality of the display panel 100.

[0046] Exemplarily, the turn-on voltages of the red light-emitting device 10c, the green light-emitting device 10b, and the blue light-emitting device 10a gradually increase. For example, the turn-on voltage of the red light-emitting device 10c is about 2.2V, the turn-on voltage of the green light-emitting device 10b is about 2.4V, and the turn-on voltage of the blue light-emitting device 10a is about 2.9V. When the green light-emitting device 10b is turned on, due to current lateral crosstalk, the red light-emitting device 10c will be turned on; when the blue light-emitting device 10a is turned on, due to current lateral crosstalk, the red light-emitting device 10c and the green light-emitting device 10b will be turned on.

[0047] Moreover, the generation of the crosstalk phenomenon is mainly due to the too low resistance of the common transport layer, such as the hole injection layer 12. The hole injection barrier and the carrier mobility will affect the lateral resistance of the common transport layer.

[0048] Based on this, as Figure 3 shown, an embodiment of the present disclosure provides a display panel 100, wherein the hole injection layer 12 includes: a first P-type doping portion 12a, a second P-type doping portion 12b, and a third P-type doping portion 12c with sequentially increasing doping concentrations.

[0049] Exemplarily, in the hole injection layer 12, the P-type doping material includes at least one of the materials shown in the following structural formulas. By doping the P-type doping material into the hole injection layer 12, different P-type doping portions of the hole injection layer 12 are formed.

[0050]

[0051] By setting the doping concentration of at least one of the above-mentioned F4TCNQ, HATCN, and TCTA materials, it is realized that the hole injection layer 12 includes a first P-type doped portion 12a, a second P-type doped portion 12b, and a third P-type doped portion 12c with gradually increasing doping concentrations.

[0052] Exemplarily, the doping concentration can also be referred to as the doping ratio. The doping ratio of the hole injection layer 12 can be analyzed by X-ray Photoelectron Spectroscopy (XPS). By measuring the characteristic peak areas of the elements of the P-type doping material and the elements of the main material of the hole injection layer 12, the doping ratio is calculated. The main material of the hole injection layer 12 is the material forming the hole injection layer 12.

[0053] As Figure 3 shown, the following introduces a display panel 100 regarding the setting structure of the first P-type doped portion 12a, the second P-type doped portion 12b, and the third P-type doped portion 12c.

[0054] In some embodiments, as Figure 3 shown, the part of the hole injection layer 12 located in the region of the red light-emitting device 10c is the third P-type doped portion 12c, the part of the hole injection layer 12 located in the region of the green light-emitting device 10b is the second P-type doped portion 12b, and the part of the hole injection layer 12 located in the region of the blue light-emitting device 10a is the first P-type doped portion 12a.

[0055] In the hole injection layer 12, the smaller the P-type doping ratio, the smaller the carrier mobility and the greater the resistance of the light-emitting device 10.

[0056] Embodiments of the present disclosure change the P-type doping concentration of the hole injection layer 12 in the regions where the red light-emitting device 10c, the green light-emitting device 10b, and the blue light-emitting device 10a are located, change the hole injection barrier of the red light-emitting device 10c, the green light-emitting device 10b, and the blue light-emitting device 10a, and the carrier mobility of the hole injection layer 12, so as to regulate the hole transport ability of the light-emitting device 10.

[0057] Figure 4 is the energy level diagram of the blue light-emitting device 10a provided according to some embodiments of the present disclosure, Figure 5 is the energy level diagram of the green light-emitting device 10b provided according to some embodiments of the present disclosure, Figure 6 is the energy level diagram of the red light-emitting device 10c provided according to some embodiments of the present disclosure.

[0058] When the P-type doping concentrations of the blue light-emitting device 10a, the green light-emitting device 10b, and the red light-emitting device 10c gradually increase, the HOMO (Highest Occupied Molecular Orbital, the orbital with the highest energy level occupied by electrons) of the hole injection layer 12 gradually becomes shallower, the hole injection barriers of the blue light-emitting device 10a, the green light-emitting device 10b, and the red light-emitting device 10c gradually decrease, and there are differences in the hole injection capabilities. Among them, the red light-emitting device 10c has the best hole injection ability, the green light-emitting device 10b has the second-best hole injection ability, and the blue light-emitting device 10a has the smallest hole injection ability.

[0059] In addition, the mobilities of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c gradually increase, resulting in differences in the internal resistances of the blue light-emitting device 10a, the green light-emitting device 10b, and the red light-emitting device 10c, thereby suppressing the lateral conduction of current from the blue light-emitting device 10a to the green light-emitting device 10b and the red light-emitting device 10c, and suppressing the lateral conduction of current from the green light-emitting device 10b to the red light-emitting device 10c, so as to effectively solve the problem of current crosstalk, improve the color purity of the light-emitting device 10 at low brightness, and improve the color gamut and display quality of the display panel 100.

[0060] The following is to adjust the hole injection barriers and carrier mobilities of different light-emitting devices 10 by setting the ratio of the doping concentrations of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c and the specific doping concentrations.

[0061] In some embodiments, as Figure 3 shown, the difference range between the doping concentration of the first P-type doping portion 12a and the doping concentration of the second P-type doping portion 12b is 0.5% - 2.9%; the difference range between the doping concentration of the first P-type doping portion 12a and the doping concentration of the third P-type doping portion 12c is 4.5% - 9.9%; the difference range between the doping concentration of the second P-type doping portion 12b and the doping concentration of the third P-type doping portion 12c is 2% - 9%.

[0062] Exemplarily, the differences between the doping concentration of the first P-type doping portion 12a and the doping concentration of the second P-type doping portion 12b are 0.5%, 0.6%, 0.8%, 1%, 1.2%, 1.5%, 1.6%, 1.8%, 1.9%, 2%, 2.1%, 2.4%, 2.6%, or 2.9%, etc., and there is no limitation here.

[0063] Exemplarily, the difference between the doping concentration of the first P-type doping portion 12a and the doping concentration of the third P-type doping portion 12c is 4.5%, 4.6%, 4.8%, 5%, 5.5%, 5.8%, 6.2%, 6.5%, 7%, 7.6%, 8%, 8.2%, 8.6%, 9%, 9.5%, or 9.9%, etc., and there is no limitation here.

[0064] Exemplarily, the difference between the doping concentration of the second P-type doping portion 12b and the doping concentration of the third P-type doping portion 12c is 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 4.8%, 5%, 5.6%, 6%, 6.5%, 7%, 7.5%, 8%, 8.5%, or 9%, etc., and there is no limitation here.

[0065] Exemplarily, the doping concentration range of the first P-type doping portion 12a is 0.1% to 0.5%. For example, the doping concentration of the first P-type doping portion 12a is 0.1%, 0.2%, 0.3%, 0.4%, or 0.5%, etc., and there is no limitation here.

[0066] Exemplarily, the doping concentration range of the second P-type doping portion 12b is 1% to 3%. For example, the doping concentration of the second P-type doping portion 12b is 1%, 1.5%, 2%, 2.5%, or 3%, etc., and there is no limitation here.

[0067] Exemplarily, the doping concentration range of the third P-type doping portion 12c is 5% to 10%. For example, the doping concentration of the third P-type doping portion 12c is 5%, 6%, 7%, 8%, 9%, or 10%, etc., and there is no limitation here.

[0068] By setting the doping concentrations of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c as described above, the hole injection barrier and carrier mobility of different light-emitting devices 10 can be adjusted to effectively solve the problem of current crosstalk, improve the color purity of the light-emitting device 10 at low brightness, and improve the color gamut and display quality of the display panel 100.

[0069] In some examples, as Figure 3 shown, by setting the doping concentrations of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c, the ratio of the sheet resistance of the blue light-emitting device 10a, the sheet resistance of the green light-emitting device 10b, and the sheet resistance of the red light-emitting device 10c can be made 12:5:1, so as to achieve the difference in the internal resistance of the blue light-emitting device 10a, the green light-emitting device 10b, and the red light-emitting device 10c, thereby suppressing the problem of current crosstalk.

[0070] Exemplarily, as Figures 4 to 6As shown, the work function of the anode 11 is 4.8 eV, the HOMO energy level of the first P-type doping portion 12a is 5.2 eV to 5.3 eV, and the hole injection barrier range is 0.4 eV to 0.5 eV; the HOMO energy level of the second P-type doping portion 12b is 5.1 eV to 5.2 eV, and the hole injection barrier range is 0.3 eV to 0.4 eV; the HOMO energy level of the third P-type doping portion 12c is 5.0 eV to 5.1 eV, and the hole injection barrier range is 0.2 eV to 0.3 eV.

[0071] The purpose of gradually reducing the hole injection barrier of the blue light-emitting device 10a, the green light-emitting device 10b, and the red light-emitting device 10c is achieved, that is, the purpose that the red light-emitting device 10c has the best hole injection ability, the green light-emitting device 10b has the second-best hole injection ability, and the blue light-emitting device 10a has the smallest hole injection ability is achieved, so as to effectively suppress the problem of current crosstalk, improve the color purity of the light-emitting device 10 at low brightness, and improve the color gamut and display quality of the display panel 100.

[0072] In some embodiments, as Figures 4 to 6 shown, the part of the light-emitting layer 15 located in the area of the blue light-emitting device 10a is the first light-emitting pattern 15a, the part of the light-emitting layer 15 located in the area of the green light-emitting device 10b is the second light-emitting pattern 15b, and the part of the light-emitting layer 15 located in the area of the red light-emitting device 10c is the third light-emitting pattern 15c. The first light-emitting pattern 15a, the second light-emitting pattern 15b, and the third light-emitting pattern 15c all include a host material and a guest material.

[0073] For example, the first light-emitting pattern 15a includes a host material BH and a guest material BD, the second light-emitting pattern 15b includes a host material GH and a guest material GD, and the third light-emitting pattern 15c includes a host material RH and a guest material RD.

[0074] By reasonably selecting the host material and the guest material of the light-emitting layer 15, the energy level structure of the host material and the guest material can be adjusted, and the exciton recombination region in the light-emitting layer 15 can be improved to increase the lifespan of the light-emitting device 10.

[0075] As Figure 7 shown, another display panel 100 regarding the arrangement structure of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c is introduced below.

[0076] In some embodiments, as Figure 7 shown, the third P-type doping portion 12c, the first P-type doping portion 12a, and the second P-type doping portion 12b are stacked in a direction away from the anode 11.

[0077] That is to say, along the direction away from the anode 11, the doping concentration of the hole injection layer 12 first decreases and then increases.

[0078] The HOMO orbit of the third P-type doping portion 12c with a high doping concentration is relatively shallow, which can effectively reduce the hole injection barrier from the anode 11 to the hole injection layer 12 and effectively reduce the turn-on voltage of the light-emitting device 10. Compared with the doping concentration of the third P-type doping portion 12c, the doping concentration of the first P-type doping portion 12a decreases, and the HOMO energy level of the first P-type doping portion 12a becomes deeper, which can reduce the barrier between the hole injection layer 12 and the hole transport layer 12 and enhance the hole injection ability in the light-emitting device 10. However, the rapid injection of holes will cause crosstalk between multiple light-emitting devices 10.

[0079] Therefore, a second P-type doping portion 12b is provided on the side of the first P-type doping portion 12a away from the anode 11. Compared with the doping concentration of the first P-type doping portion 12a, the doping concentration of the second P-type doping portion 12b increases. By providing the second P-type doping portion 12b, the injection barrier between the hole injection layer 12 and the hole transport layer 13 can be effectively regulated to effectively regulate the resistance of the light-emitting device 10, improve the color crosstalk between multiple light-emitting devices 10 at low current density, and improve the display quality of the display panel 100.

[0080] By arranging the doping concentration of the hole injection layer 12 to first decrease and then increase along the direction away from the anode 11 in the embodiments of the present disclosure, the hole injection barrier and carrier mobility of the light-emitting device 10 can be effectively regulated, the resistance can be increased, and the occurrence of crosstalk between multiple light-emitting devices 10 can be reduced, so as to improve the display quality of the display panel 100.

[0081] In some examples, as Figure 7 shown, the following is through the ratio of the doping concentrations of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c and the setting of the specific doping concentrations to achieve the purpose of regulating the hole injection barrier and carrier mobility of the light-emitting device 10 and reducing the occurrence of crosstalk between multiple light-emitting devices 10.

[0082] Exemplarily, as Figure 7 shown, the difference range between the doping concentration of the first P-type doping portion 12a and the doping concentration of the second P-type doping portion 12b is 0.5% to 1.9%; the difference range between the doping concentration of the first P-type doping portion 12a and the doping concentration of the third P-type doping portion 12c is 1.5% to 4.9%; the difference range between the doping concentration of the second P-type doping portion 12b and the doping concentration of the third P-type doping portion 12c is 0.1% to 4%.

[0083] Exemplarily, the difference between the doping concentration of the first P-type doping portion 12a and the doping concentration of the second P-type doping portion 12b is 0.5%, 0.7%, 0.9%, 1%, 1.2%, 1.4%, 1.6%, 1.8% or 1.9%, etc., and there is no limitation here.

[0084] Exemplarily, the difference between the doping concentration of the first P-type doping portion 12a and the doping concentration of the third P-type doping portion 12c is 1.5%, 1.8%, 2%, 2.2%, 2.5%, 2.7%, 3%, 3.2%, 3.5%, 3.8%, 4%, 4.2%, 4.5% or 4.9%, etc., and there is no limitation here.

[0085] Exemplarily, the difference between the doping concentration of the second P-type doping portion 12b and the doping concentration of the third P-type doping portion 12c is 0.1%, 0.5%, 0.8%, 1%, 1.2%, 1.4%, 1.6%, 1.8%, 2%, 2.5%, 2.8%, 3%, 3.4%, 3.8% or 4%, etc., and there is no limitation here.

[0086] Exemplarily, the doping concentration range of the first P-type doping portion 12a is 0.1% to 0.5%. For example, the doping concentration of the first P-type doping portion 12a is 0.1%, 0.2%, 0.3%, 0.4% or 0.5%, etc., and there is no limitation here.

[0087] Exemplarily, the doping concentration range of the second P-type doping portion 12b is 1% to 2%. For example, the doping concentration of the second P-type doping portion 12b is 1%, 1.2%, 1.5%, 1.8% or 2%, etc., and there is no limitation here.

[0088] Exemplarily, the doping concentration range of the third P-type doping portion 12c is 2% to 5%. For example, the doping concentration of the third P-type doping portion 12c is 2%, 3%, 3.5%, 4%, 4.5% or 5%, etc., and there is no limitation here.

[0089] By setting the doping concentrations of the first P-type doping portion 12a, the second P-type doping portion 12b, and the third P-type doping portion 12c as described above, the hole injection barrier and carrier mobility of the light-emitting device 10 are effectively regulated, the resistance is increased, and the occurrence of crosstalk between multiple light-emitting devices 10 is reduced, so as to improve the display quality of the display panel 100.

[0090] In some embodiments, such as Figure 7As shown, when the third P-type doping portion 12c, the first P-type doping portion 12a, and the second P-type doping portion 12b are stacked in a direction away from the anode 11, by setting the third P-type doping portion 12c, the first P-type doping portion 12a, and the second P-type doping portion 12b with different thicknesses, it is possible to further achieve the purpose of regulating the hole injection barrier and the carrier mobility of the light-emitting device 10 and reducing the occurrence of crosstalk phenomena between multiple light-emitting devices 10. The following examples introduce the settings of the third P-type doping portion 12c, the first P-type doping portion 12a, and the second P-type doping portion 12b with different thicknesses.

[0091] Exemplarily, when the third P-type doping portion 12c, the first P-type doping portion 12a, and the second P-type doping portion 12b are stacked in a direction away from the anode 11, the thickness d1 of the first P-type doping portion 12a, the thickness d2 of the second P-type doping portion 12b, and the thickness d3 of the third P-type doping portion 12c are different, that is, the three thicknesses d1, d2, and d3 are different from each other.

[0092] Exemplarily, the ratio range of the sum of the thickness d2 of the second P-type doping portion 12b and the thickness d3 of the third P-type doping portion 12c to the thickness d1 of the first P-type doping portion 12a is 0.9 to 1.1, that is, 0.9 ≤ (d2 + d3) / d1 ≤ 1.1.

[0093] For example, the ratio of the sum of the thickness d2 of the second P-type doping portion 12b and the thickness d3 of the third P-type doping portion 12c to the thickness d1 of the first P-type doping portion 12a is 0.9, 1, or 1.1, etc., and there is no limitation here.

[0094] Exemplarily, the thickness d2 of the second P-type doping portion 12b is less than the thickness d3 of the third P-type doping portion 12c, that is, d2 < d3.

[0095] For example, the ratio of the thickness d1 of the first P-type doping portion 12a, the thickness d2 of the second P-type doping portion 12b, and the thickness d3 of the third P-type doping portion 12c is 5:2:3.

[0096] By setting the third P-type doping portion 12c, the first P-type doping portion 12a, and the second P-type doping portion 12b with different thicknesses, the purpose of regulating the hole injection barrier and the carrier mobility of the light-emitting device 10 and reducing the occurrence of crosstalk phenomena between multiple light-emitting devices 10 is achieved.

[0097] As Figure 1 shown, an embodiment of the present disclosure further provides a display device 1000 including a display panel 100 provided in any one of the above embodiments. The display device 1000 further includes a driving chip, and the driving chip is used to drive the display panel 100 to display.

[0098] Exemplarily, the display panel 100 is connected to a driving chip, and the driving chip is configured to transmit an electrical signal to the display panel 100.

[0099] As Figure 1 shown, the display device 1000 includes the display panel 100 provided in any of the above embodiments. Therefore, the display device 1000 provided by the present disclosure has all the beneficial effects of the display panel 100 provided in any of the above embodiments, which will not be elaborated herein.

[0100] As described above, only the specific embodiments of the present disclosure are provided, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure who contemplates changes or substitutions should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A display panel, characterized in that: include: A plurality of light-emitting devices, each of which comprises: an anode, a cathode, a light-emitting layer between the anode and the cathode, and a hole injection layer between the anode and the light-emitting layer; The plurality of light emitting devices include: a blue light emitting device, a green light emitting device and a red light emitting device; Wherein, the hole injection layer comprises: a first P-type doping portion, a second P-type doping portion and a third P-type doping portion with increasing doping concentrations in sequence; The portion of the hole injection layer located in the area where the red light-emitting device is located is the third P-type doping portion, the portion of the hole injection layer located in the area where the green light-emitting device is located is the second P-type doping portion, and the portion of the hole injection layer located in the area where the blue light-emitting device is located is the first P-type doping portion; or, the third P-type doping portion, the first P-type doping portion and the second P-type doping portion are stacked in a direction away from the anode.

2. The display panel according to claim 1, characterized in that: In the case where the portion of the hole injection layer located in the area where the red light-emitting device is located is the third P-type doped portion, the portion of the hole injection layer located in the area where the green light-emitting device is located is the second P-type doped portion, and the portion of the hole injection layer located in the area where the blue light-emitting device is located is the first P-type doped portion, The difference between the doping concentration of the first P-type doping portion and the doping concentration of the second P-type doping portion is in the range of 0.5% to 2.9%; The difference between the doping concentration of the first P-type doping portion and the doping concentration of the third P-type doping portion is in the range of 4.5% to 9.9%; The difference between the doping concentration of the second P-type doping portion and the doping concentration of the third P-type doping portion is in a range of 2% to 9%.

3. The display panel according to claim 2, characterized in that: The doping concentration of the first P-type doping part is in the range of 0.1% to 0.5%; The doping concentration of the second P-type doping portion is in the range of 1% to 3%; The doping concentration of the third P-type doping part is in a range of 5% to 10%.

4. The display panel according to claim 1, characterized in that: When the third P-type doping portion, the first P-type doping portion and the second P-type doping portion are stacked in a direction away from the anode, the thickness of the first P-type doping portion, the thickness of the second P-type doping portion and the thickness of the third P-type doping portion are different.

5. The display panel according to claim 4, characterized in that: The ratio of the sum of the thickness of the second P-type doping portion and the thickness of the third P-type doping portion to the thickness of the first P-type doping portion is in a range of 0.9 to 1.

1.

6. The display panel according to claim 4, characterized in that: The thickness of the second P-type doping portion is smaller than the thickness of the third P-type doping portion.

7. The display panel according to claim 4, characterized in that: The difference between the doping concentration of the first P-type doping portion and the doping concentration of the second P-type doping portion is in the range of 0.5% to 1.9%; The difference between the doping concentration of the first P-type doping portion and the doping concentration of the third P-type doping portion is in the range of 1.5% to 4.9%; The difference between the doping concentration of the second P-type doping portion and the doping concentration of the third P-type doping portion is in a range of 0.1% to 4%.

8. The display panel according to claim 7, characterized in that: The doping concentration of the first P-type doping part is in the range of 0.1% to 0.5%; The doping concentration of the second P-type doping portion is in the range of 1% to 2%; The doping concentration of the third P-type doping part is in a range of 2% to 5%.

9. The display panel according to claim 1, characterized in that: In the hole injection layer, the P-type doping material includes at least one of the materials shown in the following structural formulas; 10. A display device, characterized in that: include: The display panel according to any one of claims 1 to 9; A driving chip is used to drive the display panel to display.

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