Inverted QLEDs based on solid phase transfer organic transport layer and its preparation method and application

Abstract

The present invention discloses an inverted QLEDs based on a solid phase transfer organic transport layer and its preparation method and application, which belongs to the technical field of light emitting diode preparation. From bottom to top, it includes ITO conductive glass, Zn 1‑x Mg x O electron transport layer, quantum dot light-emitting layer, organic transport layer based on solid phase transfer, hole injection layer and metal anode. The preparation method comprises the following steps: ultrasonically cleaning ITO conductive glass with detergent, deionized water, acetone and isopropyl alcohol respectively; drying the cleaned ITO conductive glass and performing ultraviolet ozone treatment; spin coating Zn on the treated ITO conductive glass 1‑ x Mg x O nanoparticle solution, annealing; taking quantum dot solution and spin coating it on the resultant, annealing; depositing an organic transport layer on the resultant by solid phase transfer method, annealing; spin coating a PEDOT:PSS hole injection layer on the resultant, annealing; and evaporating a metal anode on the resultant.

Description

Technical Field

[0001] The present invention belongs to the technical field of light-emitting diode preparation, and specifically relates to an inverted QLEDs based on a solid phase transfer organic transport layer and its preparation method and application. Background Art

[0002] Inverted QLEDs have broad application prospects due to their bottom electrodes, which can be integrated with metal oxides and silicon-based thin-film transistors. In inverted QLEDs, an organic hole transport layer needs to be prepared above the quantum dot light-emitting layer. However, when preparing the organic hole transport layer by solution spin coating, it is difficult to find a suitable orthogonal organic solvent, so the organic solvent of the organic hole transport layer material will destroy the film quality of the quantum dot light-emitting layer below. Summary of the Invention

[0003] In view of the shortcomings of the existing technology, the purpose of the present invention is to provide an inverted QLEDs based on a solid phase transfer organic transport layer and its preparation method and application, which is used to solve the technical problem in the existing technology that organic solvents will destroy the film quality of the quantum dot light-emitting layer below.

[0004] The object of the present invention can be achieved by the following technical solution: A method for preparing inverted QLEDs based on solid phase transfer organic transport layer, the method comprising the following steps:

[0005] In an ultrasonic cleaning machine, the ITO conductive glass, quartz glass sheet and crystal dish were cleaned with detergent, deionized water, acetone and isopropyl alcohol, respectively. The cleaning time was 20-30 minutes and the cleaning temperature was 20-40°C.

[0006] Use a nitrogen / argon gun to blow off the solvent on the surface, then use a UV-ozone cleaner to treat the ITO conductive glass, quartz glass sheet and crystallization dish for 5-30 minutes;

[0007] In a glove box, take 5-100 μL of a 5-50 mg / mL Zn1-xMgxO nanoparticle solution and spin-coat it on a clean ITO conductive glass at a speed of 1000-5000 rpm for 20-50 seconds. Then anneal it at a temperature of 60-100°C for 1-30 minutes to obtain a first substrate.

[0008] Take 5-100 μL of a quantum dot solution with a concentration of 5-40 mg / mL and spin-coat it on the first substrate at a speed of 1000-5000 rpm for 20-50 seconds, then anneal it at a temperature of 80-120°C for 1-30 minutes to obtain a second substrate;

[0009] The second substrate was taken out of the glove box, and an organic transport layer was deposited using a solid phase transfer method to obtain an ITO / Zn1-xMgxO / quantum dots / organic transport layer structure;

[0010] 5-100 μL of a mixed solution of PEDOT:PSS and isopropyl alcohol was spin-coated on the ITO / Zn1-xMgxO / quantum dot / organic transport layer structure as a hole injection layer, followed by annealing to obtain a third substrate;

[0011] Aluminum or silver electrodes with a thickness of 100-200 nm are evaporated on the third substrate to finally obtain inverted QLEDs.

[0012] Furthermore, the method of depositing the organic transport layer using the solid phase transfer method comprises the following steps:

[0013] Spin coating a polydiallyldimethylammonium chloride aqueous solution with a mass fraction of 1-90% on a clean quartz glass substrate at a rotation speed of 1000-6000 rpm for 10-120 seconds, followed by annealing at a temperature of 80-120° C. for 1-30 minutes to form an intermediate layer film;

[0014] Spin coating the desired organic transport layer solution on the obtained quartz glass substrate covered with the polydiallyldimethylammonium chloride film, and annealing to obtain a substrate for the desired transferred organic transport layer film;

[0015] Place the obtained organic transport layer film substrate on a clean dust-free cloth, place a glass rod at an angle to the film-coated side of the substrate, and gently scrape off the film covering the four sides of the quartz glass substrate to allow the organic transport layer film to be peeled off smoothly. Use a nitrogen gun to gently blow off any remaining debris on the surface.

[0016] Place a clean quartz plate in a tilted crystallization dish. Then place the quartz glass substrate covered with the organic transport layer next to the quartz plate, avoiding direct contact with the inner wall of the crystallization dish. Then, use a syringe pump to inject water into the crystallization dish at a rate of 1-300mL / min, so that the organic transport layer film can be peeled off and eventually completely separated from the substrate and floated on the water surface.

[0017] Take out the ITO substrate covered with the electron transport layer and quantum dot layer from the glove box, align it with the floating organic transport layer film, quickly stick it up, and use a nitrogen / argon gun to remove water droplets on the surface of the organic transport layer film. Then send it to the glove box for annealing at a temperature of 60-150°C and an annealing time of 1-30 minutes.

[0018] Furthermore, the volume ratio of the mixed solution of PEDOT:PSS and isopropyl alcohol is 10:1 to 1:10, the spin coating speed is 500 to 10,000 rpm, the time is 20 to 120 s, the temperature is 80 to 150° C., and the time is 1 to 30 min.

[0019] Furthermore, the spin coating speed of the organic transport layer solution is 1000-6000 rpm, the time is 20-120 s, the annealing temperature is 60-150° C., and the time is 1-20 min.

[0020] Furthermore, the organic transport layer solution is poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-n-butyl)phenyl)-diphenylamine)], poly(9-vinylcarbazole), poly[N,N′-diphenyl-N,N′-di(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine], poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,8-diyl)], poly(9,9-dioctylfluorenyl-2, Any one of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylethynyl)-, poly(9,9-dioctylfluorene-2,7-diyl)-alt-(N,N'-diphenylbenzidine-N,N'-diyl) and poly(2,5-dibutoxybenzene-1,4-diyl) is dissolved in any one of chlorobenzene, toluene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, tetrahydrofuran, o-xylene, m-xylene, p-xylene, chloroform, acetone and ethyl acetate to a concentration of 1 to 100 mg / mL.

[0021] An inverted QLEDs based on a solid phase transfer organic transport layer includes ITO conductive glass, a Zn1-xMgxO electron transport layer, a quantum dot light-emitting layer, an organic hole transport layer based on solid phase transfer, a hole injection layer and a metal anode.

[0022] Furthermore, the thickness of the ITO conductive glass is 70 to 300 nm, the thickness of the Zn1-xMgxO electron transport layer is 1 to 100 nm, the thickness of the quantum dot light-emitting layer is 1 to 100 nm, the thickness of the organic hole transport layer based on solid phase transfer is 1 to 100 nm, the thickness of the hole injection layer is 1 to 100 nm, and the thickness of the metal anode is 100 to 200 nm.

[0023] Furthermore, the Mg content X in the Zn1-xMgxO electron transport layer is 0 to 0.2.

[0024] Furthermore, the quantum dot light-emitting layer is cadmium selenide quantum dots, zinc selenide quantum dots, indium phosphide quantum dots, perovskite quantum dots, copper indium sulfide quantum dots and carbon dot zero-dimensional light-emitting materials.

[0025] Beneficial effects of the present invention:

[0026] During use, the present invention comprises the following steps: ultrasonically cleaning the ITO conductive glass with a detergent, deionized water, acetone, and isopropyl alcohol; drying the cleaned ITO conductive glass and performing ultraviolet ozone treatment; spin-coating a Zn1-xMgxO nanoparticle solution on the treated ITO conductive glass, and annealing the solution; spin-coating a quantum dot solution on the resultant of the previous step, and annealing the solution; depositing an organic transport layer on the resultant by a solid phase transfer method, and annealing the solution; spin-coating a PEDOT:PSS hole injection layer on the resultant, and annealing the solution; and vapor-depositing a metal anode on the resultant. The present invention constructs an organic hole transport layer through solid phase transfer, solves the problem of organic solvent damaging the quantum dot light-emitting layer during the solution spin coating process of preparing the organic hole transport layer, improves film quality and luminous efficiency, reduces leakage current, and improves device performance; compared with preparing the organic transport layer by solution spin coating on top of the quantum dot light-emitting layer, solid phase transfer of the organic transport layer can avoid damage to the quantum dot light-emitting layer, and improve the film quality and luminous efficiency of the quantum dot light-emitting layer; compared with preparing the organic transport layer by solution spin coating on top of the quantum dot light-emitting layer, solid phase transfer of the organic transport layer can improve the brightness and efficiency of inverted QLEDs; compared with preparing the organic transport layer by solution spin coating on top of the quantum dot light-emitting layer, solid phase transfer of the organic transport layer can improve the life of inverted QLEDs; the solid phase transfer method can be used to prepare a variety of organic transport layer films, and the thickness is convenient and adjustable, and the film can be transferred to various types of quantum dot films. It has a wide range of applications, a simple preparation process, low cost, high repeatability, and is easy to achieve large-scale production and commercial applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 It is a flow chart of the present invention;

[0029] Figure 2 It is a schematic structural diagram of the present invention;

[0030] Figure 3 This is a performance comparison chart of the inverted QLEDs based on the solid phase transfer organic transport layer prepared in Example 1 of the present invention and the inverted QLEDs based on the solution spin coating organic transport layer prepared in the comparative example. DETAILED DESCRIPTION

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0032] like Figure 1 As shown, an inverted QLEDs based on solid phase transfer organic transport layer includes ITO conductive glass 1, Zn1-xMgxO electron transport layer 2, quantum dot light-emitting layer 3, organic hole transport layer 4, hole injection layer 5 and metal anode 6.

[0033] Example 1

[0034] The ITO conductive glass and quartz glass substrates were cleaned with detergent, deionized water, acetone, and isopropyl alcohol, respectively. The cleaning time was 20 min and the cleaning temperature was 20°C.

[0035] The solvent on the surface was blown off with a nitrogen gun, and then the ITO conductive glass and quartz glass substrates were treated in a UV-ozone cleaner for 10 min;

[0036] In a glove box, 30 μL of a 15 mg / mL Zn0.95Mg0.05O nanoparticle solution was spin-coated on the treated ITO conductive glass at a speed of 2000 rpm for 20 s. The coating was then annealed at 60°C for 5 min. The thickness of the Zn0.95Mg0.05O electron transport layer 2 was 25 nm.

[0037] Take 50 μL of a 5 mg / mL cadmium selenide quantum dot solution and spin-coat it on the obtained substrate at a speed of 2500 rpm for 30 seconds. Anneal it at 100°C for 5 minutes and place it in a glove box. The thickness of the cadmium selenide quantum dot light-emitting layer 3 is 30 nm.

[0038] A 10% polydiallyldimethylammonium chloride aqueous solution was spin-coated on a clean quartz glass substrate at a rotation speed of 6000 rpm for 60 seconds and then annealed at 120°C to form an intermediate layer film.

[0039] Dissolve poly(9-vinylcarbazole) (PVK) in chlorobenzene to prepare an 8 mg / mL organic transport layer solution. Spin-coat the resulting quartz glass substrate covered with a polydiallyldimethylammonium chloride film at 4000 rpm for 60 seconds. Anneal at 100°C to obtain the substrate for the organic transport layer transfer.

[0040] Place the obtained quartz substrate on a clean dust-free cloth and use a glass rod to gently scrape off the film covering the four sides of the quartz substrate so that the organic transport layer can be peeled off smoothly. Use a nitrogen gun to gently blow off the remaining debris on the surface;

[0041] Place a clean quartz plate measuring 1.5 x 1.5 cm in a tilted crystallization dish. Next, place the quartz substrate covered with the PVK organic transport layer next to the plate. Use a syringe pump to inject water at a rate of 20 mL / min, allowing the PVK organic transport layer to peel off completely from the substrate and float on the water surface.

[0042] The ITO substrate covered with the Zn0.95Mg0.05O electron transport layer and the CdSe quantum dot layer was removed from the glove box. A vacuum chuck was used to fix it to the back of the ITO peeled substrate. The floating PVK organic transport layer film was aligned and quickly picked up. The water droplets on the surface were removed and the film was sent to the glove box for annealing at 80°C for 10 minutes. The thickness of the PVK organic transport layer was 30 nm.

[0043] 50 μL of a mixed solution of PEDOT:PSS (AI 4083) and isopropyl alcohol with a volume ratio of 5:1 was spin-coated on the obtained substrate at a speed of 500 rpm for 20 s and annealed at 100°C for 5 min. The thickness of the hole injection layer 5 was 100 nm.

[0044] An aluminum electrode with a thickness of 100 nm was evaporated on the obtained substrate to produce an inverted QLEDs device.

[0045] Example 2

[0046] The ITO conductive glass and quartz glass substrates were cleaned with detergent, deionized water, acetone, and isopropyl alcohol, respectively. The cleaning time was 15 min and the cleaning temperature was 25°C.

[0047] Use an argon gun to blow away the solvent on the surface, and then treat it in a UV-ozone cleaning machine for 15 minutes;

[0048] In a glove box, 50 μL of a 30 mg / mL Zn0.9Mg0.1O nanoparticle solution was spin-coated on the treated ITO conductive glass at a spin-coating speed of 2500 rpm for 30 s. The solution was then annealed at 80°C for 10 min. The thickness of the Zn0.9Mg0.1O electron transport layer 2 was 40 nm.

[0049] 80 μL of a 10 mg / mL copper indium sulfide quantum dot solution was spin-coated on the substrate at a speed of 3000 rpm for 30 s, and annealed at 90°C for 5 min in a glove box. The thickness of the copper indium sulfide quantum dot light-emitting layer 3 was 20 nm.

[0050] A 20% polydiallyldimethylammonium chloride aqueous solution was spin-coated on a clean quartz glass substrate at a rotation speed of 6000 rpm for 60 seconds and then annealed at 120°C to form an intermediate layer film.

[0051] Dissolve poly(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-n-butyl)phenyl)-diphenylamine)) (TFB) in o-dichlorobenzene to prepare a 10 mg / mL organic transport layer solution. Spin-coat the resulting quartz glass substrate coated with a polydiallyldimethylammonium chloride film at 3000 rpm for 60 seconds. Anneal at 100°C to obtain the substrate for the organic transport layer transfer.

[0052] Place the obtained quartz substrate on a clean dust-free cloth and use a glass rod to gently scrape off the film covering the four sides of the quartz substrate so that the organic transport layer can be peeled off smoothly. Use a nitrogen gun to gently blow off the remaining debris on the surface;

[0053] Place a clean quartz plate measuring 1.5 x 1.5 cm in a tilted crystallization dish. Place the quartz substrate covered with the organic transport layer next to the plate. Use a syringe pump to inject water at a rate of 100 mL / min, allowing the organic transport layer to peel off completely, eventually detaching from the substrate and floating on the water surface.

[0054] Remove the ITO substrate covered with the Zn0.9Mg0.1O electron transport layer and the copper indium sulfide quantum dot layer from the glove box and fix it to the back of the ITO peeling substrate with a vacuum chuck. Align it with the floating TFB organic transport layer film and quickly stick it up. Remove the water droplets on the surface and send it to the glove box for annealing at 100°C for 15 minutes. The thickness of the TFB organic hole transport layer 4 is 45nm.

[0055] 80 μL of a mixed solution of PEDOT:PSS (AI 4083) and isopropyl alcohol with a volume ratio of 4:1 was spin-coated on the obtained substrate at a speed of 2000 rpm for 30 s. The solution was annealed at 110°C for 10 min. The thickness of the hole injection layer 5 was 80 nm.

[0056] An aluminum electrode with a thickness of 120 nm was evaporated on the obtained substrate to produce an inverted QLEDs device.

[0057] Example 3

[0058] The ITO conductive glass and quartz glass substrates were cleaned with detergent, deionized water, acetone, and isopropyl alcohol, respectively. The cleaning time was 20 min and the cleaning temperature was 30°C.

[0059] Use a nitrogen / argon gun to blow off the solvent on the surface, and then treat it in a UV-ozone cleaner for 20 minutes;

[0060] In a glove box, 80 μL of a 40 mg / mL Zn0.85Mg0.15O nanoparticle solution was spin-coated on the treated ITO conductive glass at a speed of 3000 rpm for 50 s. The annealing temperature was 100 °C for 15 min, and the thickness of the Zn0.85Mg0.15O electron transport layer 2 was 50 nm.

[0061] 100 μL of a 25 mg / mL perovskite quantum dot solution was spin-coated on the substrate at a speed of 3000 rpm for 50 s, and annealed at 80°C for 5 min in a glove box. The thickness of the perovskite quantum dot light-emitting layer 3 was 30 nm.

[0062] A 40% polydiallyldimethylammonium chloride aqueous solution was spin-coated on a clean quartz glass substrate at a rotation speed of 5000 rpm for 60 seconds and then annealed at 120°C to form an intermediate layer film.

[0063] Dissolve poly[N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine] (Poly-TPD) in m-xylene to prepare a 12 mg / mL organic transport layer solution. Spin-coat the resulting polydiallyldimethylammonium chloride-coated quartz glass substrate with the poly(diallyldimethylammonium chloride) organic transport layer solution at 3000 rpm for 50 seconds. Anneal at 80°C to obtain the substrate for the organic transport layer transfer.

[0064] Place the obtained quartz substrate on a clean dust-free cloth and use a glass rod to gently scrape off the film covering the four sides of the quartz substrate so that the Poly-TPD organic transport layer film can be peeled off smoothly. Use an argon gun to gently blow off the remaining debris on the surface;

[0065] Place a clean quartz plate measuring 1.5 x 1.5 cm in a tilted crystallization dish. Next, place the quartz substrate coated with the Poly-TPD organic transport layer next to the plate. Use a syringe pump to inject water at a rate of 200 mL / min, allowing the Poly-TPD organic transport layer to peel off completely, eventually detaching from the substrate and floating on the water surface.

[0066] Remove the ITO substrate covered with the Zn0.85Mg0.15O electron transport layer and the perovskite quantum dot layer from the glove box and fix it to the back of the ITO peeling substrate with a vacuum chuck. Align it with the floating Poly-TPD organic transport layer film and quickly stick it up. Remove the water droplets on the surface and send it to the glove box for annealing at 110°C for 20 minutes. The thickness of the Poly-TPD organic hole transport layer 4 is 50 nm.

[0067] 100 μL of a mixed solution of PEDOT:PSS (AI 4083) and isopropyl alcohol with a volume ratio of 2:1 was spin-coated on the obtained substrate at a speed of 2000 rpm for 20 s. The solution was annealed at 100°C for 5 min. The thickness of the hole injection layer 5 was 70 nm.

[0068] A silver electrode with a thickness of 150 nm was evaporated on the obtained substrate to produce an inverted QLEDs device.

[0069] Throughout this specification, references to terms such as "one embodiment," "example," or "specific example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0070] The basic principles, main features, and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention, and such changes and modifications are intended to fall within the scope of the present invention.

Claims

1. A method for preparing inverted QLEDs based on solid phase transfer organic transport layer, characterized in that: The method comprises the following steps: Clean the ITO conductive glass, quartz glass sheet and crystallization dish with detergent, deionized water, acetone and isopropyl alcohol respectively. The cleaning time is 20-30 minutes and the cleaning temperature is 20-40℃. Use a nitrogen / argon gun to blow off the solvent on the surface, then use a UV-ozone cleaner to treat the ITO conductive glass, quartz glass sheet and crystallization dish for 5-30 minutes; In a glove box, take 5-100 μL of a 5-50 mg / mL Zn1-xMgxO nanoparticle solution and spin-coat it on a clean ITO conductive glass at a speed of 1000-5000 rpm for 20-50 seconds. Then anneal it at a temperature of 60-100°C for 1-30 minutes to obtain a first substrate. Take 5-100 μl of a quantum dot solution with a concentration of 5-40 mg / mL and spin-coat it on the first substrate at a speed of 1000-5000 rpm for 20-50 seconds, then anneal it at a temperature of 80-120°C for 1-30 minutes to obtain a second substrate; The second substrate was taken out of the glove box, and an organic transport layer was deposited using a solid phase transfer method to obtain an ITO / Zn1-xMgxO / quantum dots / organic transport layer structure; The method for depositing an organic transport layer using a solid phase transfer method comprises the following steps: Spin coating a polydiallyldimethylammonium chloride aqueous solution with a mass fraction of 1-90% on a clean quartz glass substrate at a rotation speed of 1000-6000 rpm for 10-120 seconds, followed by annealing at a temperature of 80-120° C. for 1-30 minutes to form an intermediate layer film; Spin coating the desired organic transport layer solution on the obtained quartz glass substrate covered with the polydiallyldimethylammonium chloride film, and annealing to obtain a substrate for the desired transferred organic transport layer film; Place the obtained organic transport layer film substrate on a clean dust-free cloth, place a glass rod at an angle to the film-coated side of the substrate, and gently scrape off the film covering the four sides of the quartz glass substrate to allow the organic transport layer film to be peeled off smoothly. Use a nitrogen gun to gently blow off any remaining debris on the surface. Place a clean quartz plate in a tilted crystallization dish. Then place the quartz glass substrate covered with the organic transport layer next to the quartz plate, avoiding direct contact with the inner wall of the crystallization dish. Then, use a syringe pump to inject water into the crystallization dish at a rate of 1-300mL / min, so that the organic transport layer film can be peeled off and eventually completely separated from the substrate and floated on the water surface. Take out the ITO substrate covered with the electron transport layer and quantum dot layer from the glove box, align it with the floating organic transport layer film, quickly stick it up, and use a nitrogen / argon gun to remove water droplets on the surface of the organic transport layer film. Then send it to the glove box for annealing at a temperature of 60-150°C and an annealing time of 1-30 minutes; 5-100 μL of a mixed solution of PEDOT:PSS and isopropyl alcohol was spin-coated on the ITO / Zn1-xMgxO / quantum dot / organic transport layer structure as a hole injection layer, followed by annealing to obtain a third substrate; Aluminum or silver electrodes with a thickness of 100-200 nm are evaporated on the third substrate to finally obtain inverted QLEDs.

2. The method for preparing inverted QLEDs based on solid phase transfer organic transport layer according to claim 1, characterized in that: The volume ratio of the mixed solution of PEDOT:PSS and isopropyl alcohol is 10:1 to 1:10, the spin coating speed is 500 to 10,000 rpm, the time is 20 to 120 s, the temperature is 80 to 150° C., and the time is 1 to 30 min.

3. The method for preparing inverted QLEDs based on solid phase transfer organic transport layer according to claim 1, characterized in that: The spin coating speed of the organic transport layer solution is 1000-6000 rpm, the time is 20-120 s, the annealing temperature is 60-150° C., and the time is 1-20 min.

4. The method for preparing inverted QLEDs based on solid phase transfer organic transport layer according to claim 3, characterized in that: The organic transport layer solution is poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-n-butyl)phenyl)-diphenylamine)], poly(9-vinylcarbazole), poly[N,N′-diphenyl-N,N′-di(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine], poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,8-diyl)], poly(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,8-diyl)], poly(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,8-diyl)], poly(9,9-dioctylfluorenyl-2,7-diphenylamine) Any one of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylethynyl)-, poly(9,9-dioctylfluorene-2,7-diyl)-alt-(N,N'-diphenylbenzidine-N,N'-diyl) and poly(2,5-dibutoxybenzene-1,4-diyl) is dissolved in any one of chlorobenzene, toluene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, tetrahydrofuran, o-xylene, m-xylene, p-xylene, chloroform, acetone and ethyl acetate to a concentration of 1 to 100 mg / mL.

5. An inverted QLED based on a solid phase transfer organic transport layer, using the method for preparing an inverted QLED based on a solid phase transfer organic transport layer according to any one of claims 1 to 4, characterized in that: The invention comprises an indium ionized toluene (ITO) conductive glass (1), a zinc ion-glucose (Zn1-xMgxO) electron transport layer (2), a quantum dot light-emitting layer (3), an organic hole transport layer (4) based on solid phase transfer, a hole injection layer (5) and a metal anode (6); the zinc ion-glucose (Zn1-xMgxO) electron transport layer (2) is provided above the indium ionized toluene (ITO) conductive glass (1), the quantum dot light-emitting layer (3) is provided above the zinc ion-glucose (Zn1-xMgxO) electron transport layer (2), the organic hole transport layer (4) based on solid phase transfer is provided above the quantum dot light-emitting layer (3), the organic hole transport layer (4) based on solid phase transfer is provided above the hole injection layer (5), and the metal anode (6) is provided above the hole injection layer (5).

6. The inverted QLEDs based on solid phase transfer organic transport layer according to claim 5, characterized in that: The thickness of the ITO conductive glass (1) is 70 to 300 nm, the thickness of the Zn1-xMgxO electron transport layer (2) is 1 to 100 nm, the thickness of the quantum dot light-emitting layer (3) is 1 to 100 nm, the thickness of the solid phase transfer-based organic hole transport layer (4) is 1 to 100 nm, the thickness of the hole injection layer (5) is 1 to 100 nm, and the thickness of the metal anode (6) is 100 to 200 nm.

7. The inverted QLEDs based on solid phase transfer organic transport layer according to claim 6, characterized in that: The Mg content X in the Zn1-xMgxO electron transport layer (2) is 0 to 0.

2.

8. The inverted QLEDs based on solid phase transfer organic transport layer according to claim 7, characterized in that: The quantum dot light-emitting layer (3) is a cadmium selenide quantum dot, zinc selenide quantum dot, indium phosphide quantum dot, perovskite quantum dot, copper indium sulfide quantum dot and carbon dot zero-dimensional light-emitting material.

9. A method for applying inverted QLEDs based on a solid phase transfer organic transport layer, characterized in that: Inverted QLEDs based on a solid phase transfer organic transport layer as described in any one of claims 5 to 8 are used.

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