Staggered silicon-based three-dimensional spiral inductor, band-pass filter and low-pass filter

By using the method of interleaved metal sheet arrangement and metal conductor column connection in silicon-based three-dimensional spiral inductors, the traditional problem of large inductor area and low density is solved, and a higher inductance density and a more compact filter structure are achieved.

CN120051202AActive Publication Date: 2025-05-27XIDIAN UNIV
View PDF 7 Cites 0 Cited by

Patent Information

Application Number
CN202510150874.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-11
Publication Date
2025-05-27
Estimated Expiration
2045-02-11

AI Technical Summary

Technical Problem

The area of ​​traditional three-dimensional spiral inductors is large, and the inductance density has not yet reached the space for improvement, making it difficult to meet the more complex design needs in RF circuits.

Method used

An interlaced silicon-based three-dimensional spiral inductor structure is adopted, and a three-dimensional spiral inductor structure is formed by setting in the upper and lower metal layers in an interlaced manner and connecting them in the vertical direction through metal conductor columns.

Benefits of technology

The quality factor and inductance density of inductors in RF circuits are improved, the area of ​​three-dimensional spiral inductors is reduced, and the inductance density is achieved on a single-layer silicon substrate, while simplifying the preparation process.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN120051202A_ABST
    Figure CN120051202A_ABST
Patent Text Reader

Abstract

The invention relates to a staggered silicon-based three-dimensional spiral inductor and a band-pass and low-pass filter, and the staggered silicon-based three-dimensional spiral inductor comprises an inductor first metal layer, a first silicon dioxide dielectric layer, an inductor silicon dielectric layer, a second silicon dioxide dielectric layer and an inductor second metal layer which are sequentially arranged from top to bottom, a plurality of inductor metal sheets are arranged on the inductor first metal layer in a staggered mode, a plurality of inductor metal sheets are arranged on the inductor second metal layer in a staggered mode, and the number of the inductor metal sheets on the inductor first metal layer is the same as that of the inductor metal sheets on the inductor second metal layer. And the plurality of inductor metal sheets on the inductor first metal layer and the inductor second metal layer are connected in a one-to-one correspondence manner through the plurality of first metal conductor columns. According to the three-dimensional spiral inductor, the area of the three-dimensional spiral inductor is reduced by arranging the inductor metal sheets in a staggered mode, higher inductance density is achieved on the single-layer silicon substrate, and meanwhile the preparation process is simpler.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Through-silicon-via technique based three-dimensional band-pass filter

    CN108198803A

  • A low-pass filter design method based on through-silicon-via

    CN109743034A

  • Low-pass filter based on three-dimensional capacitance and inductance and preparation method thereof

    CN111769808A

  • Micro three-dimensional solenoid transformer and digital isolator

    CN112599321A

  • Silicon-based ultra-wide passband / dual-passband adjustable microwave filter

    CN117117445A