Phase shifter, manufacturing method thereof and electronic equipment

Abstract

The invention provides a phase shifter, a manufacturing method thereof and electronic equipment, and the phase shifter comprises a first substrate and a second substrate which are oppositely arranged, a plurality of phase shifting units which are arranged between the first substrate and the second substrate and are arranged in an array, and a heating structure which is arranged between the first substrate and the second substrate. Wherein the heating structures are used for heating the corresponding phase shifting units, and orthographic projections of the heating structures and the corresponding phase shifting units on the same substrate are not overlapped.

Description

Technical Field

[0001] The present invention relates to the field of communication technologies, and particularly to a phase shifter, a manufacturing method thereof, and an electronic device. Background Art

[0002] With the development of communication technologies and the advent of the 5G era, the communication of mobile electronic devices will be faster and more convenient. In particular, the development of 5G networks has promoted the development of antenna technologies. 5G networks need to adapt to scenarios such as large bandwidth, high reliability and low latency, and large connections, which requires 5G antennas to be able to flexibly and real-time implement beam adjustment and support high-frequency band communication capabilities.

[0003] Currently, the mainstream solution is to transmit electromagnetic wave signals through phased array antennas to achieve signal transmission and reception between communication devices. A phased array antenna is a type of array antenna that changes the beam pointing of the radiation pattern by controlling the feeding phase of the radiation units in the array antenna, and can achieve spatial scanning of the array beam, that is, the so-called electronic scanning. As an important component of a phased array antenna, a phase shifter plays an extremely important role in improving the power synthesis efficiency of the antenna component and the synthesis efficiency of the echo signal by changing the consistency of the antenna component, realizing beam switching or scanning, and improving the capabilities of the communication system. Thus, the improvement of the performance of the phase shifter becomes particularly important. Summary of the Invention

[0004] The present invention provides a phase shifter, a manufacturing method thereof, and an electronic device, which are used to improve the working performance of the phase shifter in a low-temperature environment.

[0005] In a first aspect, an embodiment of the present invention provides a phase shifter, including:

[0006] A first substrate and a second substrate disposed opposite to each other, a plurality of phase shift units arranged in an array between the first substrate and the second substrate, and a heating structure disposed between the first substrate and the second substrate; wherein, the heating structure is used to heat the corresponding phase shift unit, and the positive projection of the heating structure and the corresponding phase shift unit on the same substrate do not overlap each other.

[0007] In a possible implementation manner, the heating structure is disposed between at least some adjacent two of the plurality of phase shift units.

[0008] In a possible implementation manner, the heating structure is disposed between the first substrate and the plurality of phase shift units, and / or, the heating structure is disposed between the second substrate and the plurality of phase shift units.

[0009] In a possible implementation, the phase shifter includes a functional area and a binding area located on one side of the functional area; the multiple phase shifting units and the heating structure are all located in the functional area, and the heating structure includes a main part extending along a first direction and a branch part extending along a second direction intersecting with the first direction, the main part and the branch part form a closed structure, and the first direction is the direction from the binding area to the functional area.

[0010] In a possible implementation manner, the width of the branch portion is smaller than the width of the main portion.

[0011] In a possible implementation manner, the branch includes at least one repeatedly arranged bending unit, and orthographic projections of each bending unit and a corresponding phase shifting unit on the same substrate do not overlap with each other.

[0012] In a possible implementation, the bending unit includes a first branch and a second branch connected in sequence, and the first branch and the second branch form a folded line structure.

[0013] In a possible implementation, the bending unit is a structure arranged in a U-shape.

[0014] In a possible implementation manner, the bending unit is at least one ring structure arranged in a spiral shape.

[0015] In a possible implementation, each of the phase shifting units includes a first electrode and a second electrode that are arranged opposite to each other, and a dielectric layer located between the first electrode and the second electrode; a first passivation layer is provided on the side of the first electrode facing away from the dielectric layer, and a second passivation layer is provided on the side of the first electrode close to the dielectric layer; the heating structure is located on the side of the first passivation layer facing away from the first electrode.

[0016] In a possible implementation, in the binding area, the phase shifter further includes a heating voltage feeding end, and the heating voltage feeding end is electrically connected to the heating structure via the first electrode through a second via hole penetrating the second passivation layer and a first via hole penetrating the first passivation layer in sequence.

[0017] In a possible implementation, it also includes a frame glue arranged around the periphery of the functional area, and a third via hole coated and wrapped by the frame glue; wherein the third via hole is opened through the second passivation layer.

[0018] In a second aspect, an embodiment of the present invention further provides an electronic device, including:

[0019] A phase shifter as described in any preceding clause.

[0020] In a third aspect, an embodiment of the present invention further provides a method for manufacturing a phase shifter, including:

[0021] While forming a plurality of phase shift units arranged in an array, a heating structure is formed between a first substrate and a second substrate; wherein, the heating structure is used to heat the corresponding phase shift unit, and the positive projection of the heating structure and the corresponding phase shift unit on the same substrate do not overlap.

[0022] In a possible implementation manner, forming a heating structure between the first substrate and the second substrate includes:

[0023] Depositing a metal layer on a side of the second substrate close to the first substrate;

[0024] Adopting a patterning process to form a pattern of the heating structure.

[0025] In a possible implementation manner, after adopting the patterning process to form a pattern of the heating structure, the method further includes:

[0026] Depositing a first passivation layer on a side of the heating structure facing away from the second substrate;

[0027] Adopting a preset mask plate to form a first via hole opened for the first passivation layer in a bonding area on a side of the phase shifter where the functional area is located, and a second via hole opened for the first passivation layer in a redundant area between two adjacent second substrates; wherein, the preset mask plate includes a first pattern for forming the first via hole and a second pattern for forming the second via hole;

[0028] Adopting a cutting process to cut off the redundant area;

[0029] Forming a pattern of a first electrode on a side of the first passivation layer facing away from the second substrate; wherein, the first electrode and a second electrode corresponding to a side of the first substrate close to the second substrate form a corresponding phase shift unit;

[0030] Forming a second passivation layer on a side of the first electrode facing away from the second substrate;

[0031] Adopting the preset mask plate to open the second via hole at a position of the second passivation layer corresponding to the first via hole based on the second pattern, and open a third via hole penetrating through the second passivation layer around the functional area based on the first pattern;

[0032] Forming a border glue around the periphery of the functional area, wherein the border glue is coated to wrap the third via hole.

[0033] The beneficial effects of the present invention are as follows:

[0034] An embodiment of the present invention provides a phase shifter, a manufacturing method thereof, and an electronic device. The phase shifter includes a first substrate and a second substrate disposed opposite to each other, a plurality of phase shift units arranged in an array between the first substrate and the second substrate, and a heating structure disposed between the first substrate and the second substrate. The heating structure and the corresponding phase shift unit do not overlap in the orthographic projection on the same substrate. In this way, if the current phase shifter is in a low-temperature environment, the corresponding phase shift unit can be heated through the heating structure, so as to realize the temperature control processing of the corresponding phase shift unit, avoid the influence of low temperature on the phase shifter, and thus improve the working performance of the phase shifter in a low-temperature environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 FIG. is a schematic cross-sectional structure diagram of one of the phase shifters provided by the embodiment of the present invention;

[0036] Figure 2 FIG. is a schematic top view structure diagram of one of the phase shifters provided by the embodiment of the present invention;

[0037] Figure 3 is Figure 2 a schematic structure diagram of one of the branches of the heating unit in ;

[0038] Figure 4 is Figure 1 a schematic structure diagram of one of the heating units in ;

[0039] Figure 5 FIG. is a schematic cross-sectional structure diagram of one of the phase shifters provided by the embodiment of the present invention;

[0040] Figure 6 FIG. is a schematic cross-sectional structure diagram of one of the phase shifters provided by the embodiment of the present invention;

[0041] Figure 7 FIG. is a schematic top view structure diagram of one of the phase shifters provided by the embodiment of the present invention;

[0042] Figure 8 is along Figure 7 a schematic cross-sectional structure diagram of one of the relevant structural films of the second substrate in the direction of MM shown in ;

[0043] Figure 9 is along Figure 7 a schematic cross-sectional structure diagram of one of the relevant structural films of the second substrate in the direction of NN shown in ;

[0044] Figure 10 FIG. is a flowchart of one of the methods for forming a heating structure between a first substrate and a second substrate in the manufacturing method of the phase shifter provided by the embodiment of the present invention;

[0045] Figure 11One of the method flowcharts after step S102 in Figure 10 ;

[0046] Figure 12 One of the process flowcharts corresponding to the method shown in Figure 10 ;

[0047] Figure 13 One of the schematic structural diagrams of the preset mask plate for manufacturing a phase shifter adopted in the embodiments of the present invention;

[0048] Description of reference numerals:

[0049] 10 - First substrate; 20 - Second substrate; 30 - Phase shift unit; 40 - Heating structure; A - Functional area; B - Bonding area; 41 - Main part; 42 - Branch part; 420 - Bending unit; 421 - First branch; 422 - Second branch; 31 - First electrode; 32 - Second electrode; 33 - Dielectric layer; 50 - First passivation layer; 60 - Second passivation layer; 70 - Alignment layer; 80 - Support layer; 90 - Conductive layer; H1 - First via; H2 - Second via; 91 - Edge glue; H3 - Third via; D - Redundant area. Detailed implementation manners

[0050] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some but not all of the embodiments of the present invention. And, without conflict, the embodiments in the present invention and the features in the embodiments may be combined with each other. All other embodiments obtained by those of ordinary skill in the art based on the described embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0051] Unless otherwise defined, the technical terms or scientific terms used in the present invention shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The "first", "second" and similar terms used in the present invention do not denote any order, quantity or importance, but are only used to distinguish different components. The terms such as "including" or "comprising" mean that the elements or items appearing before this term cover the elements or items listed after this term and their equivalents, without excluding other elements or items. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "inner", "outer", "upper", "lower", etc. are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0052] It should be noted that the sizes and shapes of the figures in the drawings do not reflect the true proportions, and the purpose is only to schematically illustrate the content of the present invention. Also, the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0053] In the related art, the phase shifters used in phased array antennas mainly include mechanical phase shifters and electronic phase shifters. Mechanical phase shifters such as waveguide phase shifters, air coaxial phase shifter devices, strip phase shifters, and arc phase shifters, etc., change the phase of electromagnetic signal transmission by changing the position of the medium and the physical length of the transmission line. Mechanical phase shifters are large in size and are greatly restricted by inertia, and cannot quickly change the phase in an extremely short time, so they cannot meet the signal transmission requirements of quickly changing the phase within milliseconds or even shorter time in the 5G era. Electronic phase shifters such as ferrite phase shifters (changing the permeability of the ferrite in the waveguide by applying an external DC magnetic field to change the phase velocity of electromagnetic waves) and semiconductor phase shifters (realizing the access of different transmission lines by controlling the on / off of PIN diodes, thereby achieving different phase delays). Although the disadvantages of mechanical phase shifters are overcome, the cost of electronic phase shifters is too high, the design is complex, the intermodulation performance is poor, and continuous phase modulation cannot be achieved.

[0054] The liquid crystal phase shifter well overcomes the disadvantages of mechanical phase shifters and electronic phase shifters, and has the advantages of low power consumption, miniaturization, and fast response, etc. Specifically, the liquid crystal phase shifter is a device that changes the dielectric constant of the liquid crystal material by applying a voltage to the upper and lower substrates containing liquid crystal to form an overlapping capacitor, so that the phase constant of the electromagnetic wave on the device changes, and finally the effect of adjusting the phase shift amount is achieved, thereby realizing the beam scanning of the phased array antenna device.

[0055] Two key indicators affecting the performance of the liquid crystal phase shifter are the phase shift amount and loss of the phase shifter. Among them, the loss mainly includes transmission loss and dielectric loss. In particular, when the phase shifter is in a low-temperature environment, the liquid crystal molecules in the liquid crystal material are inactive. The cooling effect in the low-temperature environment will slow down the dynamics of the liquid crystal molecules. At the same time, the interaction between liquid crystal molecules will also change with the decrease of temperature, making it difficult to twist and rotate. The threshold voltage of the liquid crystal increases, the response speed becomes slower, and even the liquid crystal lattice crystallizes, resulting in the failure of the liquid crystal device and even inability to work properly. The high dielectric constant microwave liquid crystal itself has a very high viscosity, which exacerbates this adverse tendency. Low temperature will also lead to the electrodes forming overlapping capacitors, slower response time, and higher leakage current. If it is required that the liquid crystal phase shifter can be used in outdoor conditions (such as satellite portable stations or outdoor base station application scenarios), it will inevitably face the problem of reliability under severe low-temperature tests. Especially when the ambient temperature is lower than -20°C, the loss and response performance of the phase shifter deteriorate severely.

[0056] In view of this, embodiments of the present invention provide a phase shifter, a manufacturing method thereof, and an electronic device, which are used to improve the working performance of the phase shifter in a low-temperature environment.

[0057] As Figure 1 shown, embodiments of the present invention provide a phase shifter, including:

[0058] A first substrate 10 and a second substrate 20 which are oppositely arranged, a plurality of phase-shifting units 30 arranged in an array between the first substrate 10 and the second substrate 20, and a heating structure 40 arranged between the first substrate 10 and the second substrate 20; wherein, the heating structure 40 is used to heat the corresponding phase-shifting units 30, and the orthographic projections of the heating structure 40 and the corresponding phase-shifting units 30 on the same substrate do not overlap.

[0059] In a specific implementation process, the phase shifter includes a first substrate 10 and a second substrate 20 which are oppositely arranged, and a plurality of phase-shifting units 30 arranged in an array between the first substrate 10 and the second substrate 20. Among them, the specific number and arrangement manner of the plurality of phase-shifting units 30 can be set according to actual application needs and are not limited herein. In addition, the phase shifter further includes a heating structure 40 arranged between the first substrate 10 and the second substrate 20. Among them, the number of the heating structures 40 can be one or multiple, which can be set according to actual application needs and is not limited herein. Moreover, the orthographic projections of the heating structure 40 and the corresponding phase-shifting units 30 on the same substrate do not overlap, thereby avoiding the influence of the heating structure 40 on the related functions of the phase-shifting units 30. Exemplarily, the heating structure 40 can be correspondingly arranged with one phase-shifting unit 30 or multiple phase-shifting units 30, which is not limited herein. In addition, the corresponding phase-shifting units 30 can be heated through the heating structure 40. In this way, when the phase shifter is currently in a low-temperature environment, the corresponding phase-shifting units 30 can be heated through the heating structure 40, thereby realizing the temperature control management of the corresponding phase-shifting units 30, avoiding the influence of low temperature on the phase shifter, and improving the working performance of the phase shifter in a low-temperature environment.

[0060] In embodiments of the present invention, the heating structure 40 is arranged between at least some adjacent two of the plurality of phase-shifting units 30. It should be noted that the number of the heating structures 40 between at least some adjacent two phase-shifting units 30 can be one or multiple, which is not limited herein. In this way, the corresponding phase-shifting units 30 can be heated through the heating structure 40, thereby avoiding the temperature of the phase shifter from being too low and ensuring the use performance of the phase shifter. In addition, the refined regulation of the phase-shifting units 30 at the corresponding positions can also be realized through the heating structure 40, which is convenient for achieving the purpose of precise temperature control.

[0061] In one exemplary embodiment, the heating structure 40 may be disposed between every two adjacent phase-shifting units 30 among the plurality of phase-shifting units 30, thereby ensuring uniform heating of the phase shifter.

[0062] In another exemplary embodiment, the heating structure 40 may be disposed between at least some adjacent two of the plurality of phase-shifting units 30.

[0063] Of course, in the specific implementation process, the positional relationship between the heating structure 40 and the phase-shifting unit 30 may be set according to actual application requirements, which is not limited herein.

[0064] In the embodiment of the present invention, the heating structure 40 is disposed between the first substrate 10 and the plurality of phase-shifting units 30, and / or the heating structure 40 is disposed between the second substrate 20 and the plurality of phase-shifting units 30.

[0065] In the specific implementation process, the heating structure 40 may be set in the following several implementation manners, but is not limited thereto. Specifically, the heating structure 40 may be set according to actual needs, which is not limited herein.

[0066] In one exemplary embodiment, the heating structure 40 is only disposed between the first substrate 10 and the plurality of phase-shifting units 30. In this way, the heating structure 40 disposed on the first substrate 10 can realize heating of the corresponding phase-shifting unit 30, avoid the influence of low temperature on the phase shifter, and improve the use performance of the phase shifter.

[0067] In one exemplary embodiment, the heating structure 40 is only disposed between the second substrate 20 and the plurality of phase-shifting units 30. In this way, the heating structure 40 disposed on the second substrate 20 can realize heating of the corresponding phase-shifting unit 30, avoid the influence of low temperature on the phase shifter, and improve the use performance of the phase shifter.

[0068] In one exemplary embodiment, the heating structure 40 is disposed between the first substrate 10 and the plurality of phase-shifting units 30, and the heating structure 40 is also disposed between the second substrate 20 and the plurality of phase-shifting units 30. In this way, the corresponding phase-shifting units 30 can be heated respectively by the heating structures 40 disposed on the first substrate 10 and the second substrate 20, avoid the influence of low temperature on the phase shifter, and improve the use performance of the phase shifter.

[0069] In an embodiment of the present invention, the phase shifter includes a functional area A and a bonding area B located on one side of the functional area A; the plurality of phase shift units 30 and the heating structure 40 are both located in the functional area A, and the heating structure 40 includes a main part 41 extending along a first direction and a branch part 42 extending along a second direction intersecting the first direction. The main part 41 and the branch part 42 enclose a closed structure, and the first direction is the direction from the bonding area B to the functional area A.

[0070] In one exemplary embodiment, as Figure 2 shown, the phase shifter includes a functional area A and a bonding area B located on one side of the functional area A; the plurality of phase shift units 30 and the heating structure 40 are both located in the functional area A. In this way, it is convenient to heat the phase shift units 30 located in the functional area A through the heating structure 40. Specifically, the heating structure 40 includes a main part 41 extending along a first direction and a branch part 42 extending along a second direction intersecting the first direction. Among them, the first direction is the direction from the bonding area B to the functional area A. As Figure 2 shown by the arrow X in the figure, the direction of the arrow X is the first direction, and the direction of the arrow Y is the second direction. In this exemplary embodiment, the main part 41 and the branch part 42 enclose a closed structure, thereby improving the uniformity of heating. In addition, in addition to being able to set the functional area A and the bonding area B according to the Figure 2 distribution shown, the functional area A and the bonding area B can also be set according to actual application needs, which is not limited here.

[0071] Still combined with Figure 2 the exemplary embodiment shown, the width of the branch part 42 is smaller than the width of the main part 41. In this way, when the main part 41 is distributed around the functional area A and the branch part 42 is distributed outside the non-peripheral area of the functional area A, the corresponding area can be effectively temperature-controlled through the branch part 42. Among them, the width range of the branch part 42 can be 15 μm to 30 μm, and the width range of the main part 41 can be 2000 μm to 4000 μm. Exemplarily, the width of the branch part 42 is 20 μm, and the width of the main part 41 is 3000 μm. Of course, in actual applications, the width values of the branch part 42 and the main part 41 can also be set according to specific needs, which is not limited here.

[0072] In an embodiment of the present invention, combined with Figures 2 to 4 shown, the branch part 42 includes at least one repeatedly arranged bending unit 420, and the orthographic projections of the respective bending units 420 on the same substrate do not overlap with the corresponding phase shift units 30.

[0073] In the specific implementation process, the branch 42 includes at least one repeatedly arranged bending unit 420. Among them, the specific number of the bending units 420 can be set according to actual heating needs and is not limited herein. In addition, the orthographic projections of the respective bending units 420 and the corresponding phase-shifting units 30 on the same substrate do not overlap. In this way, while taking into account the temperature control performance of the bending units 420, the influence on the communication function of the phase-shifting units 30 is avoided.

[0074] In Figure 2 and Figure 3 In the exemplary embodiment shown, the bending unit 420 includes a first branch 421 and a second branch 422 connected in sequence, and the first branch 421 and the second branch 422 enclose a polygonal structure. In the specific implementation process, the specific settings of the first branch 421 and the second branch 422 can also be set according to actual application needs and are not limited herein.

[0075] In Figure 4 In the exemplary embodiment shown, the bending unit 420 is a structure arranged in a square shape.

[0076] In one exemplary embodiment, the bending unit 420 is at least one loop of an annular structure arranged in a spiral shape. Among them, the at least one loop of the annular structure can be one loop or multiple loops, which is not limited herein. Of course, the number of loops of the at least one loop of the annular structure can also be set according to actual application needs and is not limited herein.

[0077] It should be noted that in addition to setting the bending unit 420 in the manner mentioned above, the specific structure of the bending unit 420 can also be set according to actual application needs and is not limited herein.

[0078] In the embodiment of the present invention, in combination with Figure 5 and Figure 6 In the exemplary embodiment shown, each of the phase-shifting units 30 includes a first electrode 31 and a second electrode 32 arranged opposite to each other, and a dielectric layer 33 located between the first electrode 31 and the second electrode 32; a first passivation layer 50 is provided on a side of the first electrode 31 facing away from the dielectric layer 33, and a second passivation layer 60 is provided on a side of the first electrode 31 close to the dielectric layer 33; the heating structure 40 is located on a side of the first passivation layer 50 facing away from the first electrode 31.

[0079] In the specific implementation process, each phase-shifting unit 30 includes a first electrode 31 and a second electrode 32 which are oppositely arranged, and a dielectric layer 33 located between the first electrode 31 and the second electrode 32; wherein, the orthographic projections of the first electrode 31 and the second electrode 32 corresponding to the same phase-shifting unit 30 on the same substrate partially overlap. In this way, after applying voltages to the first electrode 31 and the second electrode 32, an overlapping capacitance is formed, thereby changing the material dielectric constant between the first electrode 31 and the second electrode 32. In this case, the phase constant of the electromagnetic wave on the phase shifter will change, thus achieving the effect of adjusting the phase shift degree. Moreover, the orthographic projections of the first electrodes 31 of each phase-shifting unit 30 on the same substrate do not overlap with each other, and the orthographic projections of the second electrodes 32 of each phase-shifting unit 30 on the same substrate do not overlap with each other, thereby ensuring the independence of each phase-shifting unit 30, avoiding interference between adjacent phase-shifting units 30, and improving the performance of the phase shifter. Exemplarily, the dielectric layer 33 can be a liquid crystal layer, and the corresponding phase shifter can be a liquid crystal phase shifter; the materials of the first electrode 31 and the second electrode 32 can be Cu. Correspondingly, the first electrode 31 and the second electrode 32 have low resistance, low cost, and low loss of electromagnetic wave signals, improving the device performance of the phase shifter. Moreover, the orthographic projections of the dielectric layers 33 of each phase-shifting unit 30 on the same substrate do not overlap with each other, thereby ensuring the independence of each phase-shifting unit 30, avoiding interference between adjacent phase-shifting units 30, and improving the performance of the phase shifter.

[0080] In addition, a first passivation layer 50 is provided on the side of the first electrode 31 facing away from the dielectric layer 33, and a second passivation layer 60 is provided on the side of the first electrode 31 close to the dielectric layer 33; Exemplarily, the materials of the first passivation layer 50 and the second passivation layer 60 can be SiNx or SiOx, which is not limited herein. Moreover, the heating structure 40 is located on the side of the first passivation layer 50 facing away from the first electrode 31.

[0081] In Figure 5 In the shown exemplary embodiment, the first electrode 31 is disposed between the second substrate 20 and the dielectric layer 33, the second electrode 32 is disposed between the first substrate 10 and the dielectric layer 33, and the heating structure 40 is located between the first electrode 31 and the second substrate 20. Exemplarily, when the first substrate 10 is the upper substrate and the second substrate 20 is the lower substrate, the heating structure 40 is disposed on the lower substrate; in practical applications, the pattern of the heating structure 40 can be made by reusing the marking metal layer located between the lower substrate and the first electrode 31, thereby simplifying the manufacturing process while taking into account the temperature control performance of the phase shifter.

[0082] In Figure 6In the exemplary embodiment shown, the first electrode 31 is disposed between the first substrate 10 and the dielectric layer 33, the second electrode 32 is disposed between the second substrate 20 and the dielectric layer 33, and the heating structure 40 is located between the first electrode 31 and the first substrate 10. Exemplarily, when the first substrate 10 is the upper substrate and the second substrate 20 is the lower substrate, the heating structure 40 is disposed on the upper substrate; in practical applications, the pattern of the heating structure 40 can be fabricated by reusing the marking metal layer located between the upper substrate and the first electrode 31, thereby simplifying the manufacturing process while taking into account the temperature control performance of the phase shifter.

[0083] In practical applications, in addition to Figure 5 and Figure 6 the exemplary embodiments shown, the heating structure 40 can also be respectively disposed between the first substrate 10 and the dielectric layer 33, and between the second substrate 20 and the dielectric layer 33; correspondingly, the heating structure 40 is located between the first electrode 31 and the first substrate 10, and between the second electrode 32 and the second substrate 20. Exemplarily, when the first substrate 10 is the upper substrate and the second substrate 20 is the lower substrate, the heating structure 40 is disposed on both the upper substrate and the lower substrate; in practical applications, the pattern of the corresponding heating structure 40 can be fabricated by reusing the marking metal layer located between the upper substrate and the first electrode 31, and the marking metal layer located between the lower substrate and the second electrode 32, thereby simplifying the manufacturing process while taking into account the temperature control performance of the phase shifter.

[0084] It should be noted that still in combination with Figure 5 and Figure 6In the exemplary embodiment shown, in addition to the above-mentioned related film layer structures, the phase shifter further includes an alignment layer 70 disposed on the side of the second passivation layer 60 close to the dielectric layer 33. Exemplarily, the alignment layer 70 may be a polyimide (PI) film. In this way, through the pre-set alignment layer 70, the liquid crystal molecules in the liquid crystal layer are inclined at a preset angle. In this case, after a voltage is applied to the first electrode 31 and the second electrode 32, the adjustment efficiency of the dielectric constant of the liquid crystal layer is improved, thereby improving the phase shift efficiency. In addition, a support layer 80 with a certain thickness is further disposed between the first substrate 10 and the second substrate 20, and the support layer 80 is located between the second passivation layers 60 corresponding to the two substrates, and is used to ensure the cell performance between the first substrate 10 and the second substrate 20 and improve the performance of the phase shifter. Moreover, in order to facilitate the application of the required voltage signal to the signal electrodes (the first electrode 31 or the second electrode 32) on the two substrates, the phase shifter further includes a conductive layer 90 disposed between the first passivation layer 50 and the second passivation layer 60 on the same substrate, and the conductive layer 90 is electrically connected to the signal electrode on the same substrate. Of course, other film layers of the phase shifter can also be set according to actual application needs, and specific settings can refer to those in the related art, which will not be elaborated here.

[0085] In Figure 5 the exemplary embodiment shown, in combination with Figure 7 and Figure 8 shown, wherein, Figure 7 FIG. is a top view structural schematic diagram of one type of the phase shifter; Figure 8 FIG. is a cross-sectional structural schematic diagram of one type of the relevant structural film layer of the second substrate 20 along the direction MM shown in Figure 7 ; specifically, in the bonding area B, the phase shifter further includes a heating voltage feed-in end (shown by the arrow L in the figure), and the heating voltage feed-in end is electrically connected to the heating structure 40 via the first electrode 31 through the second via hole H2 penetrating the second passivation layer 60 in sequence and the first via hole H1 penetrating the first passivation layer 50.

[0086] Still in combination with Figure 8As shown, in the binding area B, the phase shifter further includes a heating voltage feeding terminal, which is used to heat the heating structure 40 at a corresponding position, so as to realize the temperature control adjustment of the phase shift unit 30 at the corresponding position. Specifically, the heating voltage feeding terminal is electrically connected to the heating structure 40 via the first electrode 31 by sequentially passing through the second via hole H2 of the second passivation layer 60 and the first via hole H1 of the first passivation layer 50. Exemplarily, the orthographic projection of the first via hole H1 on the same substrate completely falls within the area range of the orthographic projection of the second via hole H2 on the same substrate. In this way, it is easier to locate the feeding position of the heating voltage feeding terminal and facilitate the welding of external wires. Exemplarily, the size range of the first via hole H1 is 50μm to 200μm. For example, the size of the first via hole H1 is 100μm; the size range of the second via hole H2 is 2000μm to 2800μm. For example, the size of the second via hole H2 is 2500μm. Of course, the specific sizes of the first via hole H1 and the second via hole H2 can also be set according to actual application needs, and are not limited here.

[0087] In Figure 5 the exemplary embodiment shown, in combination with Figure 7 and Figure 9 shown, wherein, Figure 9 is a schematic cross-sectional structure diagram of one of the directions along NN shown in Figure 7 ; specifically, the phase shifter further includes a frame adhesive 91 disposed around the periphery of the functional area A, and a third via hole H3 coated and wrapped by the frame adhesive 91; wherein, the third via hole H3 is opened through the second passivation layer 60. In this way, the frame adhesive 91 avoids the contact between the third via hole H3 and the air, thereby reducing the risk of subsequent water and oxygen erosion of the first electrode 31. In the specific implementation process, the size of the third via hole H3 is equal to the size of the first via hole H1. The "equal" mentioned here can be approximately equal or nearly equal, and is not limited here.

[0088] Based on the same inventive concept, an embodiment of the present invention further provides an electronic device, which includes the phase shifter as described above.

[0089] In the specific implementation process, the phase shifter includes a plurality of phase shift units arranged in an array. After each phase shift unit is applied with a voltage to form an electric field, it drives the liquid crystal layer to deflect, thereby changing the dielectric constant of the liquid crystal layer, and further changing the phase of the electromagnetic wave signal. It should be noted that the phase shift amounts required to be adjusted for each phase shift unit can be the same or different, and corresponding voltages can be applied to each phase shift unit according to actual application needs, and the entire phase shift adjustment process is more convenient and fast.

[0090] In practical applications, a temperature control feedback sensor can also be arranged on the back of the phase shifter. Exemplarily, the temperature control feedback sensor is arranged on the side of the second substrate facing away from the first substrate, thus facilitating real-time programming temperature control.

[0091] In addition, the principle of the electronic device for solving the problem is similar to that of the aforementioned phase shifter. Therefore, the implementation of the electronic device can refer to the implementation of the aforementioned phase shifter, and the repeated parts will not be elaborated here.

[0092] In the specific implementation process, the electronic device provided by the embodiment of the present invention can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, etc. Other essential components of the electronic device are understood by those of ordinary skill in the art and will not be elaborated here, nor should it be regarded as a limitation to the present invention.

[0093] Based on the same inventive concept, the embodiment of the present invention also provides a manufacturing method of a phase shifter. The manufacturing method includes:

[0094] While forming a plurality of phase shift units arranged in an array, a heating structure is formed between the first substrate and the second substrate; wherein, the heating structure is used to heat the corresponding phase shift unit, and the positive projection of the heating structure and the corresponding phase shift unit on the same substrate do not overlap.

[0095] In the specific implementation process, while preparing a plurality of phase shift units, a heating structure is prepared between the first substrate and the second substrate. Through this heating structure, the heating of the phase shift unit at the corresponding position can be realized. In this way, the temperature control adjustment of the phase shifter is realized. Moreover, the positive projection of the heating structure and the corresponding phase shift unit on the same substrate do not overlap, thus avoiding the influence on the phase shift performance while taking into account the temperature control performance of the phase shifter.

[0096] In the embodiment of the present invention, as Figure 10 shown, the step of forming a heating structure between the first substrate and the second substrate includes:

[0097] S101: Deposit a metal layer on the side of the second substrate close to the first substrate;

[0098] S102: Adopt a patterning process to form a pattern of the heating structure.

[0099] In the specific implementation process, taking the Figure 5 shown phase shifter as an example, the specific implementation process of steps S101 to S102 is as follows:

[0100] First, deposit a metal layer on one side of the second substrate close to the first substrate; for example, the metal layer can be a Mo metal layer or an Al / Mo metal layer; then, use a patterning process to etch the metal layer to form the pattern required for the heating structure. Among them, the patterning process can be a photolithography and etching process, which is not limited here. It should be noted that the pattern required for the marking structure can also be formed together through this metal layer, thus simplifying the manufacturing process.

[0101] In the embodiment of the present invention, as Figure 11 shown, after step S102: forming the pattern of the heating structure by using the patterning process, the method further includes:

[0102] S201: Deposit a first passivation layer on the side of the heating structure facing away from the second substrate;

[0103] S202: Use a preset mask plate to form a first via for the first passivation layer in the bonding area on the functional area side of the phase shifter, and a second via for the first passivation layer in the redundant area between two adjacent second substrates; wherein, the preset mask plate includes a first pattern for forming the first via and a second pattern for forming the second via; the projected area of the first pattern on the same substrate is smaller than the projected area of the second pattern;

[0104] S203: Use a cutting process to cut off the redundant area;

[0105] S204: Form a pattern of the first electrode on the side of the first passivation layer facing away from the second substrate; wherein, the first electrode and the second electrode corresponding to the side of the first substrate close to the second substrate form a corresponding phase shift unit;

[0106] S205: Form a second passivation layer on the side of the first electrode facing away from the second substrate;

[0107] S206: Use the preset mask plate to open the second via at the position of the second passivation layer corresponding to the first via based on the second pattern, and open a third via penetrating the second passivation layer around the functional area based on the first pattern;

[0108] S207: Form a border glue around the periphery of the functional area, wherein the border glue is coated to wrap the third via.

[0109] In the specific implementation process, still taking the Figure 5 shown phase shifter as an example, combined with the Figure 12 shown process flow chart, the specific implementation process of steps S201 to S207 is as follows:

[0110] A first passivation layer is deposited on the side of the heating structure away from the second substrate; then, a preset mask is used to open a first via hole penetrating the first passivation layer in the binding area of ​​the phase shifter located on the side of the functional area, and a second via hole penetrating the first passivation layer is opened in the redundant area D between two adjacent second substrates. In other words, a preset mask is used to form a first via hole and a second via hole penetrating the first passivation layer in both the binding area and the redundant area D. The preset mask includes a first pattern for forming a first via hole and a second pattern for forming a second via hole; the projection area of ​​the first pattern on the same substrate is smaller than the projection area of ​​the second pattern. Figure 13 The figure shows a schematic diagram of a top view structure of a preset mask plate, wherein the reference numeral P1 represents a first pattern, the reference numeral P2 represents a second pattern, h1 represents the size of the first pattern, h2 represents the size of the second pattern, and h represents the distance between the second pattern and the first pattern.

[0111] In one of the exemplary embodiments, h<d; exemplarily, the size of the first pattern is 100μm, the size of the second pattern is 2500μm, the distance between the first pattern and the second pattern is 3000μm, and the distance between two adjacent second substrates (as shown by label d in the figure) is greater than 3000μm, for example, the distance between two adjacent second substrates is 3200μm; exemplarily, along the direction from the binding area to the functional area, the width of the redundant area D is 3200μm; in the actual preparation process, a preset mask plate is used, and at the same time as a first via hole penetrating the first passivation layer is opened in the binding area, a second via hole penetrating the first passivation layer can be opened in the redundant area D, thereby improving the efficiency of opening the vias.

[0112] Then, a cutting process is used (the cutting line is shown as the dotted line C in the figure) to remove the redundant area D, and accordingly, the second via hole opened in the redundant area D is removed. Then, a first electrode pattern is formed on the side of the first passivation layer away from the second substrate; in this way, the first electrode and the corresponding second electrode located on the side of the first substrate close to the second substrate form a corresponding phase shift unit. It should be noted that in Figure 5 In the exemplary embodiment shown, the specific preparation process of the second electrode can be, first, depositing a metal layer on the first substrate; then, using a patterning process to form a pattern of the marking structure; then, depositing a first passivation layer; then, forming a pattern of the second electrode. The preparation process of the corresponding patterns of the first electrode and the second electrode can be implemented with reference to the relevant technology, and will not be described in detail here.

[0113] Then, for the second substrate, a second passivation layer is deposited on the side of the first electrode away from the second substrate; then, the same Figure 13The preset mask plate shown in the figure opens a second via hole penetrating the second passivation layer at a position corresponding to the first via hole in the second passivation layer based on the second pattern, and at the same time, opens a third via hole penetrating the second passivation layer around the functional area based on the first pattern. That is to say, by using the preset mask plate, while opening a second via hole penetrating the second passivation layer in the binding area, a first via hole penetrating the second passivation layer can be opened around the functional area, thereby improving the opening efficiency of the via hole. In this way, still combined with Figure 5 In the exemplary embodiment shown, in the binding area, the orthographic projection of the first via hole on the second substrate completely falls within the orthographic projection of the second via hole on the same substrate, which facilitates the positioning of the heating voltage feed position. Figure 5 In the exemplary embodiment shown, for the first substrate, after forming the pattern of the second electrode, a second passivation layer may be deposited on the second electrode.

[0114] It should be noted that after forming the second passivation layer on the first substrate and the second substrate, a certain thickness of polyimide liquid needs to be coated on the side of the second passivation layer away from the corresponding substrate, and then a curing treatment is performed to form the required alignment layer. Then, a frame sealing process is used to apply and cure the border glue, so as to form a border glue around the functional area. Among them, the border glue is coated and covers the third via. In this way, the border glue can effectively avoid the contact between the third via and the air, thereby reducing the risk of subsequent water and oxygen corrosion to the first electrode. Then, a box-matching process, a crystal filling process and a bonding process are used to realize the manufacture of phase shifter related structures. Exemplarily, for the second substrate, a certain thickness of PS material can be coated on the side of the second passivation layer away from the second substrate, and a photolithography and etching process can be used for patterning to form a support layer for the box between the substrate where the first substrate is located and the substrate where the second substrate is located. In addition, for the relevant manufacturing process of the phase shifter mentioned in the embodiment of the present invention, it can be implemented with reference to the relevant technology, which will not be described in detail here. It should be noted that in Figure 12 In the process flow chart shown, ① represents the schematic diagram of the top view structure after the first passivation layer on the second substrate is exposed; ② represents the schematic diagram of the top view structure after the second passivation layer on the second substrate is exposed; ③ represents the schematic diagram of the top view structure after the first substrate and the second substrate are paired.

[0115] In the specific implementation process, the principle of the problem to be solved by the manufacturing method of the phase shifter is similar to that of the aforementioned phase shifter. Therefore, the specific structure of the phase shifter manufactured by the manufacturing method can refer to the implementation of the aforementioned phase shifter, and the repeated parts will not be repeated.

[0116] Embodiments of the present invention provide a phase shifter, a manufacturing method thereof, and an electronic device. The phase shifter includes a first substrate and a second substrate disposed opposite to each other, a plurality of phase shift units arranged in an array between the first substrate and the second substrate, and a heating structure disposed between the first substrate and the second substrate. The heating structure and the corresponding phase shift unit do not overlap in the orthographic projection on the same substrate. In this way, if the current phase shifter is in a low-temperature environment, the corresponding phase shift unit can be heated through the heating structure, so as to realize the temperature control processing of the corresponding phase shift unit, avoid the influence of low temperature on the phase shifter, and thus improve the working performance of the phase shifter in a low-temperature environment.

[0117] Although the preferred embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications once they know the basic creative concept. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications falling within the scope of the present invention.

[0118] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application is also intended to include these modifications and variations.

Claims

1. A phase shifter, It is characterized in that include: A first substrate and a second substrate are arranged opposite to each other, a plurality of phase shifting units are arranged in an array between the first substrate and the second substrate, and a heating structure is arranged between the first substrate and the second substrate; wherein the heating structure is used to heat the corresponding phase shifting unit, and the orthographic projections of the heating structure and the corresponding phase shifting unit on the same substrate do not overlap each other.

2. The phase shifter according to claim 1, It is characterized in that The heating structure is disposed between at least partially adjacent two of the phase shifting units among the plurality of phase shifting units.

3. The phase shifter according to claim 1, It is characterized in that The heating structure is disposed between the first substrate and the plurality of phase shifting units, and / or the heating structure is disposed between the second substrate and the plurality of phase shifting units.

4. The phase shifter according to any one of claims 1 to 3, It is characterized in that The phase shifter includes a functional area and a binding area located on one side of the functional area; the multiple phase shifting units and the heating structure are all located in the functional area, and the heating structure includes a main part extending along a first direction and a branch part extending along a second direction intersecting the first direction, the main part and the branch part form a closed structure, and the first direction is the direction in which the binding area points to the functional area.

5. The phase shifter according to claim 4, It is characterized in that The width of the branch portion is smaller than the width of the main portion.

6. The phase shifter according to claim 4, It is characterized in that The branch includes at least one repeatedly arranged bending unit, and the orthographic projections of each bending unit and the corresponding phase shifting unit on the same substrate do not overlap with each other.

7. The phase shifter according to claim 6, It is characterized in that The bending unit includes a first branch and a second branch connected in sequence, and the first branch and the second branch form a broken line structure.

8. The phase shifter according to claim 6, It is characterized in that The bending unit is a structure arranged in a U-shape.

9. The phase shifter according to claim 6, It is characterized in that The bending unit is at least one annular structure arranged in a spiral shape.

10. The phase shifter according to any one of claims 1 to 3 and 5 to 9, It is characterized in that Each of the phase shifting units includes a first electrode and a second electrode arranged opposite to each other, and a dielectric layer located between the first electrode and the second electrode; a first passivation layer is arranged on the side of the first electrode facing away from the dielectric layer, and a second passivation layer is arranged on the side of the first electrode close to the dielectric layer; the heating structure is located on the side of the first passivation layer facing away from the first electrode.

11. The phase shifter according to claim 10, It is characterized in that In the binding area, the phase shifter further includes a heating voltage feeding end, and the heating voltage feeding end is electrically connected to the heating structure via the first electrode through a second via hole penetrating the second passivation layer and a first via hole penetrating the first passivation layer in sequence.

12. The phase shifter according to claim 11, It is characterized in that It further includes a border glue disposed around the periphery of the functional area, and a third via hole coated and wrapped by the border glue; wherein, the third via hole is formed through the second passivation layer.

13. An electronic device, characterized in that, it includes: The phase shifter according to any one of claims 1-12.

14. A manufacturing method of a phase shifter, characterized in that, it includes: While forming a plurality of phase shift units arranged in an array, a heating structure is formed between the first substrate and the second substrate; wherein, the heating structure is used to heat the corresponding phase shift unit, and the positive projection of the heating structure and the corresponding phase shift unit on the same substrate do not overlap.

15. The method according to claim 14, characterized in that, Forming a heating structure between the first substrate and the second substrate includes: Depositing a metal layer on the side of the second substrate close to the first substrate; Adopting a patterning process to form a pattern of the heating structure.

16. The method according to claim 15, characterized in that, After adopting the patterning process to form a pattern of the heating structure, the method further includes: Depositing a first passivation layer on the side of the heating structure facing away from the second substrate; Using a preset mask plate to form a first via hole for the first passivation layer in the bonding area on the side of the functional area of the phase shifter, and a second via hole for the first passivation layer in the redundant area between two adjacent second substrates; wherein, the preset mask plate includes a first pattern for forming the first via hole and a second pattern for forming the second via hole; the projected area of the first pattern on the same substrate is smaller than the projected area of the second pattern; Adopting a cutting process to cut off the redundant area; Forming a pattern of a first electrode on the side of the first passivation layer facing away from the second substrate; wherein, the first electrode and a second electrode corresponding to the side of the first substrate close to the second substrate form a corresponding phase shift unit; Forming a second passivation layer on the side of the first electrode facing away from the second substrate; Using the preset mask plate to open the second via hole at the position of the second passivation layer corresponding to the first via hole based on the second pattern, and to open a third via hole penetrating the second passivation layer around the periphery of the functional area based on the first pattern; Forming a border glue around the periphery of the functional area, wherein the border glue coats and wraps the third via hole.

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