Circular pole decoupling reconfigurable reflective array antenna based on metasurface

Abstract

The invention provides a circular polarization decoupling reconfigurable reflective array antenna based on a metasurface, which belongs to the technical field of electromagnetic wave regulation and control, and comprises a circular polarization horn feed source and a reconfigurable reflective array antenna, the reflection unit is sequentially provided with a first metal layer, a second metal layer and a third metal layer from top to bottom, a metalized buried hole is formed between the first metal layer and the second metal layer, and a metalized through hole is formed between the first metal layer and the third metal layer; the first metal layer is connected with the second metal layer through a metalized buried hole, and the first metal layer is connected with the third metal layer through a metalized through hole. The circular polarization decoupling reconfigurable reflective array antenna based on the metasurface has good left-handed and right-handed circular polarization wave beam independent regulation and control capability, has the advantages of low profile, low manufacturing cost, easiness in processing and the like, and has huge application potential in a modern communication system.

Description

Technical Field

[0001] The present invention relates to the technical field of electromagnetic wave regulation, and particularly to a circularly polarized decoupled reconfigurable reflectarray antenna based on metasurface. Background Art

[0002] Parabolic antennas are favored in satellite communication and radio astronomy fields due to their low cost and accurate beam pointing. However, their large volume and mass limit their applications in some environments with strict requirements for weight and space. Phased array antennas shine in radar systems, capable of high-resolution target detection, tracking, and imaging. Their electronic beam scanning ability provides great flexibility. However, the high cost, power loss, and energy consumption problems of phased array antennas also limit their wide applications.

[0003] To integrate the advantages of both and overcome their limitations, reconfigurable reflectarray antennas emerged. Such antennas not only maintain the low cost and easy processability of parabolic antennas but also solve the problem of high profile and are more easily integrated. The reflectarray radiates the electromagnetic waves radiated by the feed source after being received by the array elements through spatial feeding. By accurately calculating the phase information from the feed to each element and performing phase compensation, the advantages of dynamic beam shaping of phased array antennas are maintained while avoiding complex feeding networks.

[0004] Metasurface technology can regulate multiple physical parameters of electromagnetic waves, such as phase, amplitude, frequency, and polarization, through ingenious material selection and structural design, and even achieve functions such as negative refractive index and invisibility. In terms of dynamic tuning, although methods such as liquid crystal and mechanical control have problems of slow response speed or difficulty in integration, the electronically controlled scanning method based on PIN diodes stands out due to its small size, fast response, and easy integration. In communication systems, the polarization characteristics of electromagnetic waves are crucial, and circularly polarized antennas have attracted much attention due to their good polarization matching and anti-interference capabilities. Compared with single circularly polarized antennas, dual circularly polarized antennas have more advantages in terms of spectral utilization rate and spatial diversity gain. However, in the existing field of circularly polarized reflectarrays, most antennas capable of dynamic beam scanning can only control the beam of a single polarization, while antennas capable of dual circularly polarized scanning cannot independently control left-handed and right-handed circularly polarized waves.

[0005] Therefore, the present invention proposes an innovative circularly polarized decoupled reconfigurable reflectarray antenna based on metasurface. This antenna can independently control left-handed and right-handed circularly polarized waves. By precisely controlling the states of the active devices integrated on each element in the reflectarray, the phase difference between elements is changed, realizing the dynamic scanning function of the reflected beam. This innovation not only overcomes the limitations of the existing technology but also opens up a new path for the development of circularly polarized reflectarray antennas. Summary of the Invention

[0006] The object of the present invention is to provide a circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface. By integrating active devices, PIN diodes, the state of the reflectarray unit is switched. When circularly polarized electromagnetic waves are incident on the units in two states and reflected, a phase difference of 180° can be generated to achieve 1-bit control.

[0007] To achieve the above object, the present invention provides a circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface, including a circularly polarized horn feed and a reconfigurable reflectarray antenna. The reflectarray antenna is composed of reflectarray elements. The reflectarray elements are sequentially provided with a first metal layer, a second metal layer, and a third metal layer from top to bottom. A metallized buried via is provided between the first metal layer and the second metal layer, and a metallized through hole is provided between the first metal layer and the third metal layer. The first metal layer is connected to the second metal layer through the metallized buried via, and the first metal layer is connected to the third metal layer through the metallized through hole.

[0008] Preferably, a first dielectric layer is provided below the first metal layer, the first metal layer is printed on the top of the first dielectric layer, a second dielectric layer is provided above the third metal layer, and the third metal layer is printed below the second dielectric layer.

[0009] Preferably, the first metal layer is composed of a disc-shaped metal patch and two metal high-impedance lines. A circular etched disk is provided at the center of the disc-shaped metal patch. A first narrow through slot, a second narrow through slot, and a first wide through slot are provided on the disc-shaped metal patch. The first narrow through slot and the second narrow through slot are provided on the horizontal central axis of the disc-shaped metal patch and are connected to the circular etched disk. The first wide through slot is provided on the vertical central axis of the disc-shaped metal patch and is connected to the circular etched disk.

[0010] Preferably, the circular etched disk is partitioned into an upper left quarter disk, an upper right quarter disk, and a lower half disk by the first narrow through slot, the second narrow through slot, and the first wide through slot.

[0011] Preferably, a first rectangular etched groove and a third rectangular etched groove are etched on the upper left quarter disk, a second rectangular etched groove and a fourth rectangular etched groove are etched on the upper right quarter disk, and a fifth rectangular etched groove, a sixth rectangular etched groove, a seventh rectangular etched groove, and an eighth rectangular etched groove are etched on the lower half disk.

[0012] Preferably, a first limiting groove and a second limiting groove are provided between the upper left quarter disc and the lower half disc, a third limiting groove and a fourth limiting groove are provided between the upper right quarter disc and the lower half disc, a first diode is provided between the first limiting groove and the second limiting groove, a second diode is provided between the third limiting groove and the fourth limiting groove, the upper left quarter disc and the lower half disc are connected by the first diode, and the upper right quarter disc and the lower half disc are connected by the second diode.

[0013] Preferably, the high-impedance line includes a first high-impedance line and a second high-impedance line, the metallized vias are divided into a first metallized via and a second metallized via, the first metallized via is connected to the upper left quarter disc through the first high-impedance line, and the second metallized via is connected to the upper right quarter disc through the second high-impedance line.

[0014] Preferably, a first etching gap and a second etching gap are provided on the second metal layer, the first etching gap is provided directly above the first metallized via, and the second etching gap is provided directly above the second metallized via.

[0015] Preferably, the third metal layer includes a first metal DC feeder and a second metal DC feeder, the first metal DC feeder is connected to the first metallized via, and the second metal DC feeder is connected to the second metallized via.

[0016] Therefore, the present invention adopts the above-mentioned circular polarization decoupling and reconfigurable reflectarray antenna based on metasurface, and the technical effects are as follows: 1. By integrating active devices such as diodes in the antenna unit and through the connection of metallized vias and metallized buried vias, the antenna can dynamically adjust its electromagnetic characteristics and realize the beam reconfigurable function; 2. By adopting a metasurface-based design, the number of expensive active components is reduced, thereby reducing the manufacturing cost; 3. Through a specific metal layer structure and via configuration, independent control of left-handed and right-handed circularly polarized waves is achieved; 4. By adopting advanced materials and design technologies, the antenna realizes miniaturization and lightweight while maintaining high performance. Description of the Drawings

[0017] Figure 1 It is a three-dimensional overall schematic diagram of an embodiment of the present invention; Figure 2 It is the front of the circular polarization decoupling and reconfigurable reflectarray; Figure 3 It is the back of the circular polarization decoupling and reconfigurable reflectarray; Figure 4 It is an overall structural decomposition diagram of the reflection unit; Figure 5 is the front of the reflection unit; Figure 6 is the reflection coefficient curve of the left - hand circularly polarized wave with normal incidence when the PIN diode is conducting and cutoff for the reflection unit; Figure 7 is the relative phase difference curve of the left - hand circularly polarized wave with normal incidence when the PIN diode is conducting and cutoff for the reflection unit; Figure 8 is the cross - polarization coefficient curve of the left - hand circularly polarized wave with normal incidence when the PIN diode is conducting and cutoff for the reflection unit; Figure 9 is the beam scanning situation after the left - hand circularly polarized wave is incident; Figure 10 is the beam scanning situation after the right - hand circularly polarized wave is incident.

[0018] Reference numerals 101, circularly polarized horn feed; 102, reflectarray antenna; 201, first dielectric layer; 202, second metal layer; 203, second dielectric layer; 204, first metallized via; 205, second metallized via; 206, metallized buried via; 207, first etching gap; 208, second etching gap; 209, first metal DC feeder; 210, second metal DC feeder; 301, first high - impedance line; 302, second high - impedance line; 303, upper left quarter - disc; 304, upper right quarter - disc; 305, lower half - disc; 306, first rectangular groove; 307, second rectangular groove; 308, third rectangular groove; 309, fourth rectangular groove; 310, fifth rectangular groove; 311, sixth rectangular groove; 312, seventh rectangular groove; 313, eighth rectangular groove; 314, first wide through - slot; 315, first limiting slot; 316, second limiting slot; 317, third limiting slot; 318, fourth limiting slot; 319, first diode; 320, second diode; 321, first narrow through - slot; 322, second narrow through - slot; 323, circular etched disc. Detailed implementation manners

[0019] The technical solutions of the present invention will be further described below with reference to the accompanying drawings and embodiments.

[0020] Unless otherwise defined, the technical terms or scientific terms used in the present invention shall have the ordinary meanings understood by those of ordinary skill in the field to which the present invention belongs.

[0021] Embodiment 1 As Figures 1 - 3As shown in the figure, the present invention provides a circularly polarized decoupling reconfigurable reflectarray antenna based on a metasurface, which includes a circularly polarized horn feed 101 and a reconfigurable reflectarray antenna 102. The circularly polarized horn feed 101 serves as the feeding part of the antenna, responsible for radiating the radio frequency signal in a circularly polarized manner and illuminating the reflectarray antenna 102. The circular polarization characteristic helps to reduce the signal fading caused by the multipath effect and improve the anti-interference ability of the antenna. The reconfigurable reflectarray antenna 102 is composed of reflection units, and the reflection units can dynamically adjust the phase of the reflected signal, thereby realizing the control of the radiation beam. The reconfigurability enables the antenna to adapt to different communication requirements and environmental conditions.

[0022] The front of the reconfigurable reflectarray antenna 102 is composed of 10×10 reflection units, and the expansion period is the side length p of the square unit. The size of the array surface is not limited to 10×10. As the scale of the array surface increases, the performance of the array surface is closer to the reflection characteristics of the unit. The back of the reconfigurable reflectarray antenna 102 is composed of 200 feed lines, of which 100 are used to control the left-handed circularly polarized wave, and the other 100 are used to control the right-handed circularly polarized wave. The feed lines for controlling the left and right hands are centrosymmetric, and the spacing between each feed line is set to 0.2 mm. One end of each feed line is connected to the bottom of the metallized via hole, and the other end extends to the edge of the array for accessing direct current to control the PIN diode. The model of the above PIN diode is MADP-000907-14020x.

[0023] As Figure 4 shown in the figure, the reflection unit is sequentially provided with a first metal layer, a second metal layer 202 and a third metal layer from top to bottom. A metallized buried hole 206 is provided between the first metal layer and the second metal layer 202, and a metallized via hole is provided between the first metal layer and the third metal layer. The first metal layer is connected to the second metal layer 202 through the metallized buried hole 206, and the first metal layer is connected to the third metal layer through the metallized via hole. The first metal layer serves as the main part of the reflection unit, responsible for receiving the circularly polarized signal from the feed source and realizing signal reflection and phase adjustment through a specific structural design. The metallized buried hole 206 and the metallized via hole are used to establish electrical connections between the metal layers to realize signal transmission and phase adjustment.

[0024] A first dielectric layer 201 is provided below the first metal layer. The first metal layer is printed on the top of the first dielectric layer 201, and the second metal layer 202 is printed on the bottom of the first dielectric layer 201 to improve the reflectivity of the incident electromagnetic wave. A second dielectric layer 203 is provided above the third metal layer. The third metal layer is printed below the second dielectric layer 203 to support the metal layer and provide necessary electrical isolation. The material used for the dielectric layer is F4B, the relative dielectric constant is 2.65, the thickness of the first dielectric layer 201 is h1, and the thickness of the second dielectric layer 203 is h2.

[0025] A first etching gap 207 and a second etching gap 208 are provided on the second metal layer 202. The first etching gap 207 is provided directly above the first metallized via 204, and the second etching gap 208 is provided directly above the second metallized via 205, which are respectively used to prevent the first metallized via 204 and the second metallized via 205 from connecting to the second metal layer 202.

[0026] The third metal layer includes a first metal DC feeder 209 and a second metal DC feeder 210. The first metal DC feeder 209 is connected to the first metallized via 204, and the second metal DC feeder 210 is connected to the second metallized via 205, which are used to control the switching of the diode state. The widths of the first metal DC feeder 209 and the second metal DC feeder are both 0.2 mm. On the premise of meeting the processing accuracy, setting the width of the metal feeder as narrow as possible can effectively prevent the AC current of the first metal layer from resonating after entering the feeder, thereby reducing energy leakage.

[0027] As Figure 5 shown, the front surface of the reflection unit, i.e., the first metal layer, includes a disc-shaped metal patch and two metal high-impedance lines. A circular etched disk 323 is provided at the center of the disc-shaped metal patch. A first narrow through slot 321, a second narrow through slot 322, and a first wide through slot 314 are provided on the disc-shaped metal patch. The first narrow through slot 321 and the second narrow through slot 322 are provided on the horizontal central axis of the disc-shaped metal patch. The first narrow through slot 321 and the second narrow through slot 322 are connected to the circular etched disk 323. The first wide through slot 314 is provided on the vertical central axis of the disc-shaped metal patch. The first wide through slot 314 is connected to the circular etched disk 323. The circular etched disk 323 is partitioned into an upper left quarter disk 303, an upper right quarter disk, and a lower half disk 305 by the first narrow through slot 321, the second narrow through slot 322, and the first wide through slot 314. A first rectangular etched groove 306 and a third rectangular etched groove 308 are etched on the upper left quarter disk 303. A second rectangular etched groove 307 and a fourth rectangular etched groove 309 are etched on the upper right quarter disk 304. A fifth rectangular etched groove 310, a sixth rectangular etched groove 311, a seventh rectangular etched groove 312, and an eighth rectangular etched groove 313 are etched on the lower half disk 305. Through the specific etched groove design, the disc-shaped metal patch can realize signal reflection and phase adjustment, thereby controlling the radiation characteristics of the antenna.

[0028] A first limiting groove 315 and a second limiting groove 316 are provided between the upper left quarter disk 303 and the lower half disk 305, and a third limiting groove 317 and a fourth limiting groove are provided between the upper right quarter disk and the lower half disk 305. A first diode 319 is provided between the first limiting groove 315 and the second limiting groove 316, and a second diode 320 is provided between the third limiting groove 317 and the fourth limiting groove 318. The upper left quarter disk 303 and the lower half disk 305 are connected by the first diode 319, and the upper right quarter disk and the lower half disk 305 are connected by the second diode 320. As a reconfigurable element, the diode changes the electrical performance of the reflection unit by controlling its switching state, thereby realizing dynamic adjustment of the phase.

[0029] The high-impedance line includes a first high-impedance line 301 and a second high-impedance line 302. The metallized vias are divided into a first metallized via 204 and a second metallized via 205. The first metallized via 204 is connected to the upper left quarter disk 303 through the first high-impedance line 301, and the second metallized via 205 is connected to the upper right quarter disk through the second high-impedance line 302, serving to connect the PIN diode to the DC power port. The line width of the high-impedance line is 0.2 mm. The narrower the line width and the more the number of bends, the greater the equivalent inductance value and the stronger the isolation effect on the AC signal.

[0030] Two quarter - discs are connected to the lower - half disc through PIN diodes. By changing the state of the diodes, it can play a role in adjusting the reflection phase difference of the unit. The first diode is used to connect the upper - left quarter - disc and the lower - half disc, and the second diode is used to connect the upper - right quarter - disc and the lower - half disc. When the PIN diode is conducting, the quarter - disc and the lower - half disc can be regarded as a whole. When the PIN diode is off, the quarter - disc and the lower - half disc are in a disconnected state, and the distance between them is the width of the first narrow through - slot, which is 0.15 mm. When the circularly polarized electromagnetic wave is incident on the reflection unit, the surface current converges on both sides of the narrow through - slot and can be equivalent to a capacitor. When the PIN diode is cutoff ("Off"), its equivalent resistance is 7.8 ohm, the equivalent inductance is 30 pH, and the equivalent capacitance is 0.028 pF; when the PIN diode is conducting ("On"), it is equivalent to a series connection of a 7.8 - ohm resistor and an inductor with an inductance value of 30 pH. The positive pole of the diode is connected to the feeder at the bottom of the array surface through a metallized via, and the negative pole of the diode is connected to the ground plane through a metallized buried via, and the diameter of the metallized buried via is d1. When the voltage difference between the positive and negative poles of the diode reaches 1.33 V, the diode is in a conducting state. By applying a voltage to the DC - biased feeder, the state of the PIN diode can be precisely controlled. There are grooves on the discs, and the grooves on both sides are symmetric along the central axis. By changing the length and width of the grooves, the resonant frequency of the unit can be changed. By adjusting the size of the grooves, it can be regarded as changing the capacitance of the metal disc, and thus the purpose of adjusting the resonant frequency of the unit to the required frequency band can be achieved.

[0031] As shown in Table 1, the present invention uses CST three - dimensional full - wave simulation software for analysis. After simulation and optimization, the parameters obtained are as follows: the dimensions of the circularly polarized decoupling and reconfigurable reflection array unit proposed by the present invention are: Table 1 Parameter Dimension Table

[0032] As Figure 6 shown, when the left - hand circularly polarized wave is incident on the reflection unit, when the PIN diode is conducting, the reflectivity of the unit within the target frequency band of 6.9 - 7.5 GHz is above - 0.5 dB, and when the PIN diode is off, the reflectivity of the unit is above - 2 dB. The unit maintains a high reflectivity in both states, ensuring that the circularly polarized wave forms a high - gain reflection beam after being incident on the 10×10 reflection array.

[0033] As Figure 7 shown, within the target frequency band, the phase difference between the two states of the PIN diode being conducting and cutoff always remains at about 180°, meeting the requirements of the 1 - bit phase compensation technology.

[0034] As Figure 8As shown, within the target frequency band, the cross-polarization ratios in both states are below -15 dB, which is sufficient to ensure that the incident circularly polarized wave forms a good circularly polarized wave with a low axial ratio after reflection.

[0035] The above unit performances are all for the case of incident left-handed circularly polarized waves. At this time, the second diode 320 always remains in the conducting state, and phase reconfiguration can be achieved by switching the state of the first diode 319. Since the reflection unit is symmetric along the central axis, similarly, when the first diode 319 is in the always-conducting state, phase reconfiguration of right-handed circularly polarized waves can be achieved by switching the second diode 320, and the unit reflection coefficient, phase difference, and other performances are all Figure 6 、 Figure 7 and Figure 8 shown exactly the same. The specific control method is shown in Table 2: Table 2 Control Method

[0036] Set the state where the above diode is cut off as the coding state "0", and set the state where the diode is conducting as the coding state "1".

[0037] By changing the states of the units in the array, reflection beams with different directions can be formed. First, calculate the phases of the circularly polarized waves emitted by the feed reaching each unit in the array, then use the phased array beam scanning method to superimpose the scanning compensation phase on the basic phase of each unit, and finally normalize the continuously changing compensated phase to 0° or 180°. The specific calculation formulas are as follows: ; ; where k is the free space propagation function, is the distance from the phase center of the feed to each unit on the reflecting array surface, is the unit vector of the main beam direction formed after reflection, is the position vector of the unit in the m-th row and n-th column of the reflecting array, is the phase compensation constant; is the connected phase of the reconfigurable reflection unit after phase compensation, is the normalized phase corresponding to the unit.

[0038] When the normalized phase is 0°, the unit is set to the state "0", and when the normalized phase is 180°, the unit is set to the state "1".

[0039] Such as Figure 9As shown, by controlling the coding states of the unit PIN diodes in the 10×10 reflectarray, the pointing direction of the dynamically adjustable left-handed circularly polarized reflected beam can be achieved. Taking 7.5 GHz as an example, the selected reflection beam pointing angles in the figure are 0°, 20°, 40°, and 50° respectively. When the beam points to 40°, the main lobe gain of the reflected beam is 16 dB, and the corresponding aperture efficiency is 22.5%.

[0040] As Figure 10 shown, by controlling the states of the second diodes 320 of each unit in the 10×10 array, beam scanning of the right-handed circularly polarized wave can be achieved. And when phase modulation is performed on the right-handed circularly polarized wave, the left-handed circularly polarized wave will not have a phase response, ensuring the independent modulation of the left-handed and right-handed circularly polarized waves.

[0041] Therefore, the present invention adopts the above-mentioned circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface, which has good capabilities of independently modulating the left-handed and right-handed circularly polarized beams, and has the advantages of low profile, low manufacturing cost, easy processing, etc., and has great application potential in modern communication systems.

[0042] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that they can still modify or equivalently replace the technical solutions of the present invention, and these modifications or equivalent replacements cannot make the modified technical solutions deviate from the spirit and scope of the technical solutions of the present invention.

Claims

1. A circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface, characterized in that: The invention comprises a circularly polarized horn feed and a reconfigurable reflectarray antenna, wherein the reflectarray antenna is composed of a reflective unit, wherein the reflective unit is provided with a first metal layer, a second metal layer and a third metal layer in sequence from top to bottom, a metallized buried via is provided between the first metal layer and the second metal layer, a metallized through hole is provided between the first metal layer and the third metal layer, the first metal layer and the second metal layer are connected via the metallized buried via, and the first metal layer and the third metal layer are connected via the metallized through hole.

2. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 1, characterized in that: A first dielectric layer is disposed below the first metal layer, and the first metal layer is printed on the top of the first dielectric layer. A second dielectric layer is disposed above the third metal layer, and the third metal layer is printed below the second dielectric layer.

3. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 1, characterized in that: The first metal layer includes a disc-shaped metal patch and two metal high-impedance lines, a circular engraved disk is arranged at the center of the disc-shaped metal patch, a first narrow through groove, a second narrow through groove and a first wide through groove are arranged on the disc-shaped metal patch, the first narrow through groove and the second narrow through groove are arranged on the horizontal center axis of the disc-shaped metal patch, the first narrow through groove and the second narrow through groove are connected to the circular engraved disk, the first wide through groove is arranged on the vertical center axis of the disc-shaped metal patch, and the first wide through groove is connected to the circular engraved disk.

4. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 3, characterized in that: The circular engraved disc is divided into an upper left quarter disc, an upper right quarter disc and a lower half disc by a first narrow through slot, a second narrow through slot and a first wide through slot.

5. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 4, characterized in that: The upper left quarter disk is etched with a first rectangular groove and a third rectangular groove, the upper right quarter disk is etched with a second rectangular groove and a fourth rectangular groove, and the lower half disk is etched with a fifth rectangular groove, a sixth rectangular groove, a seventh rectangular groove and an eighth rectangular groove.

6. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 4, characterized in that: A first limiting groove and a second limiting groove are arranged between the upper left quarter disk and the lower half disk, a third limiting groove and a fourth limiting groove are arranged between the upper right quarter disk and the lower half disk, a first diode is arranged between the first limiting groove and the second limiting groove, a second diode is arranged between the third limiting groove and the fourth limiting groove, the upper left quarter disk and the lower half disk are connected via the first diode, and the upper right quarter disk and the lower half disk are connected via the second diode.

7. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 3, characterized in that: The high-impedance line includes a first high-impedance line and a second high-impedance line, and the metallized through hole is divided into a first metallized through hole and a second metallized through hole. The first metallized through hole is connected to the upper left quarter disk through the first high-impedance line, and the second metallized through hole is connected to the upper right quarter disk through the second high-impedance line.

8. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 1, characterized in that: A first etching gap and a second etching gap are arranged on the second metal layer. The first etching gap is arranged directly above the first metallization through hole, and the second etching gap is arranged directly above the second metallization through hole.

9. The circularly polarized decoupled reconfigurable reflectarray antenna based on a metasurface according to claim 1, characterized in that: The third metal layer includes a first metal DC feed line and a second metal DC feed line, the first metal DC feed line is connected to a first metallized through hole, and the second metal DC feed line is connected to a second metallized through hole.

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