Adapter-coupled ion forming apparatus

Abstract

An embodiment of the present invention provides an adapter-coupled ion forming apparatus comprising: an ion source having an output part communicating with a chamber through a through-hole, generating ions between an anode electrode and a cathode electrode by using a voltage passing through the anode electrode of the output part from a source body, thereby forming ions in an internal space of the chamber, static electricity on the surface of the target object is removed through the formed ions; and an adapter including a first connection member communicating with a through-hole formed at one port of the vacuum chamber, and a second connection member coupled to the ion source communicating through the through-hole.

Description

Technical Field

[0001] This embodiment relates to an ion formation device coupled to an adapter, which can combine an ion source with a chamber. Specifically, it relates to a technique for forming ions in the internal space of a chamber to remove static electricity. Background Art

[0002] There are various causes of static electricity, and friction, peeling, etc. are one of the main causes. This static electricity occurs in various environments such as solids, liquids, insulators, and conductors. The static electricity generated in this way produces positive and negative charges in equal amounts. In actual processes, due to the difference in the two capacitances of static electricity, in many cases, only static electricity of one polarity appears.

[0003] In addition, the manufacturing processes of electronic devices such as memory elements, flat panel display devices, and integrated circuits generate static electricity, which can cause different problems. In particular, when static electricity occurs, it can cause foreign objects to adhere to the electronic device or release static electricity to damage the pattern.

[0004] In order to suppress or remove this static electricity, various methods are proposed, and mainly the static electricity removal method using an ionization device is proposed. The ionization device generates cations and anions and discharges them into the air. The ions generated thereby neutralize the charged particles of the substrate that generates static electricity to remove static electricity.

[0005] However, since the conventional ionization device discharges ions into the air in a non-vacuum environment, it has the following problems, that is, it is difficult to use in a vacuum environment that requires high cleanliness. Therefore, the conventional static electricity removal process undergoes the following two steps, that is, forming a thin film in a vacuum environment, and then performing another static electricity removal process in a non-vacuum environment.

[0006] The above-mentioned conventional static electricity removal device separates the thin film process and the anti-static process, and it cannot immediately remove the static electricity generated when forming the thin film. Therefore, it has limitations in preventing component damage.

[0007] Moreover, the conventional static electricity removal device directly irradiates the substrate with the ion particles and ion light generated during the ion generation process, which can cause substrate damage.

[0008] In order to solve this problem, in fact, it is required to develop a more effective and technically developed static electricity removal device. Summary of the Invention

[0009] Problems to be Solved

[0010] In the above background, an object of this embodiment is to provide a technique that can improve the above problems.

[0011] Another object of the present embodiment is to provide a technology that minimally affects the chamber process conditions, so that the electrostatic removal device has a minimal impact on a specific process in the chamber.

[0012] Yet another object of the present embodiment is to provide a technology that minimizes chamber modification, and an electrostatic removal device can be added without replacing the existing chamber.

[0013] Problem solution

[0014] To achieve the above object, an embodiment provides an adapter-coupled ion formation device, which may include:

[0015] An ion source, whose output part communicates with the chamber through a through-hole, and ions are generated between the anode electrode and the cathode electrode by using the voltage of the anode electrode introduced into the output part from the source body, so as to form ions in the internal space of the chamber, and the static electricity on the surface of the target object is removed by the formed ions; and

[0016] An adapter, which includes a first connection member and a second connection member, the first connection member communicates with a through-hole formed at one port of the chamber in a vacuum state, and the second connection member is combined with the ion source communicated through the through-hole.

[0017] The first connection member may include: a through-hole connection member that is connected to the through-hole; an output pipe extension member that is used to extend the output pipe formed in the through-hole connection member; and a port connection member that is combined with one port of the chamber.

[0018] When the ions are output from the output pipe, the output strength can be adjusted by widening or narrowing the output direction.

[0019] The output pipe extension member is inclined to facilitate adjusting the output direction of the ions.

[0020] The output pipe extension member may be inclined in at least one direction of the upper side, the lower side, the left side, and the right side.

[0021] The length of the output pipe extension member can be adjusted to control the output strength of the ions.

[0022] The first connection member may further include a baffle support member to facilitate setting a baffle in the direction of the internal space of the chamber, and the baffle support member extends in the direction of the central part of the through-hole.

[0023] The baffle support member may include a baffle support length adjustment part for adjusting the position of the baffle.

[0024] The first connecting member may further include a plurality of baffle support members to facilitate arranging a plurality of baffles in the direction of the inner space of the chamber.

[0025] The second connecting member may be combined with a device having a cross-sectional area different from that of the through hole.

[0026] To achieve the above object, another embodiment provides an ion formation device including an adapter, which may include:

[0027] An adapter including a first connecting member and a second connecting member, the first connecting member communicating with a through hole formed at one port of a vacuum chamber, the second connecting member being combined with a device having a cross-sectional area different from that of the through hole, and combining the chamber with the device to prevent external fluid from flowing in; and

[0028] An ion source, whose output part exposes an anode electrode and communicates with the chamber, and generates ions between the anode electrode and a cathode electrode by using a voltage applied to the anode electrode passing through the output part from a source body, thereby forming ions in the inner space of the chamber.

[0029] The chamber may include: a service port connected to public and auxiliary devices and a view port through which the inside of the chamber can be visually observed.

[0030] The one port connected to the ion source may be a service port or a view port.

[0031] The second connecting member may be combined with the output part.

[0032] The first connecting member may include: a through hole connecting member connected to the through hole; and an output pipe extending member for extending an output pipe formed in the through hole connecting member.

[0033] When the ions are output through the output pipe, the output force may be adjusted by widening or narrowing the output direction.

[0034] The first connecting member and the second connecting member may have a plurality of holes for combining coupling parts.

[0035] The first connecting member may include a first seal made of a flexible material disposed opposite to the through hole, and the second connecting member may include a second seal made of a flexible material disposed opposite to the output part.

[0036] The first connecting member may further include a baffle support member to facilitate arranging a baffle in the direction of the inner space of the chamber.

[0037] To achieve the above object, another embodiment provides an ion forming device, which may include:

[0038] An ion source, whose output part is communicated with a chamber through a through hole, and ions are generated between the anode electrode and the cathode electrode by using the voltage of the anode electrode that is introduced into the output part from the source body, so as to form ions in the internal space of the chamber, and the static electricity on the surface of the target object is removed by the formed ions; and

[0039] An adapter, which includes an extension member and a connection member, the extension member is communicated with a through hole formed at one port of the vacuum chamber, the connection member is combined with the ion source located outside the chamber, and the extension member is inclined to facilitate adjusting the output direction of ions.

[0040] The chamber may include: a service port connected to public and auxiliary devices and a view port through which the inside of the chamber can be visually observed.

[0041] The one port connected to the ion source may be at least one of the service port and the view port.

[0042] The output part may further include: an opening part opening towards the one port, and the anode electrode may be exposed towards the chamber through the opening part.

[0043] The extension member may be inclined towards at least one of the upper side, the lower side, the left side and the right side.

[0044] The target object may be arranged on the extension line of the extension member.

[0045] The length of the extension member may be adjusted to control the output intensity of the ions.

[0046] The extension member may be connected to a port coupling frame combined with the one port.

[0047] The extension member may further include a baffle support member to facilitate arranging a baffle towards the internal space of the chamber, and the baffle support member extends towards the central part of the through hole.

[0048] The baffle support member extends towards the central part of the through hole so that the baffle is located at the central part of the through hole.

[0049] The baffle support member may include a length adjustment part capable of adjusting the position of the baffle.

[0050] The baffle support member may be fastened to the port coupling frame through a groove formed on one side of the through hole.

[0051] The extension member may further include a plurality of baffle support members to facilitate the arrangement of a plurality of baffles in the direction of the inner space of the chamber.

[0052] The plurality of baffle support members may extend in the direction of the central portion of the through hole so that the plurality of baffles are located at the central portion of the through hole.

[0053] The connection member may be combined with the output portion.

[0054] The connection member may have a plurality of holes for coupling components.

[0055] The connection member may include a flexible material seal disposed opposite the output portion.

[0056] Another embodiment provides an ion formation system, which includes:

[0057] A plurality of ion sources, whose output portions communicate with a chamber through through holes, and ions are generated between the anode electrode and the cathode electrode by using the voltage of the anode electrode introduced into the output portion from the source body, so as to form ions in the inner space of the chamber; and

[0058] A plurality of port coupling members, which communicate the plurality of ion sources located outside the chamber with the chamber through a plurality of adapters. The plurality of adapters include an extension member and a connection member. The extension member is inclined to facilitate the adjustment of the ion output direction, and the connection member is used to combine with the ion source.

[0059] The extension member may be inclined in at least one direction of the upper side, lower side, left side, and right side.

[0060] The length of the extension member can be adjusted to control the output force of the ions.

[0061] The extension member may be connected to a port coupling frame combined with one end of the through hole.

[0062] The extension member may further include a baffle support member to facilitate the arrangement of a baffle in the direction of the inner space of the chamber.

[0063] The baffle support member may extend in the direction of the central portion of the through hole so that the baffle is located at the central portion of the through hole.

[0064] The baffle support member may include a baffle support length adjustment portion for adjusting the position of the baffle.

[0065] The baffle support member may be fastened to the port coupling frame through a groove formed on one side of the through hole.

[0066] Advantages of the Invention

[0067] As described above, this embodiment has the effect of improving the above problems.

[0068] Moreover, this embodiment can minimize the impact on the chamber process conditions, so that the electrostatic removal device has the least impact on the specific process in the chamber.

[0069] Furthermore, this embodiment of the chamber can minimize the chamber modification, and it is not necessary to replace the existing chamber, but only add an electrostatic removal device.

[0070] Even further, this embodiment provides an ion formation device and an ion formation system that can effectively remove static electricity by adjusting the ion output direction through an adapter.

[0071] The technical problems to be solved in this article are not limited to the above technical problems, and those of ordinary skill in the technical field to which the present invention belongs can clearly understand other technical problems not mentioned through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0072] Figure 1 Shows a chamber that provides a specific process implementation space for the target object in a vacuum state.

[0073] Figure 2 Is a view of the ion formation device according to an embodiment combined with the chamber.

[0074] Figure 3 Is a view of the side cross-section of the ion source according to an embodiment.

[0075] Figure 4 Is a partial top view of the ion source according to an embodiment.

[0076] Figure 5 And Figure 6 Is a view of the ion source combined with the chamber through the adapter described in the first example.

[0077] Figure 7 Is a cross-sectional view of the ion source combined with the chamber through the adapter described in the first example.

[0078] Figure 8 Is a structural diagram of the ion formation device including the adapter described in the first example.

[0079] Figure 9 Is an oblique view of the adapter described in the first example.

[0080] Figure 10 Is a front side oblique view of the adapter described in the second example.

[0081] Figure 11It is a rear side perspective view of the adapter described in the second example.

[0082] Figure 12 It is an enlarged view of the baffle support member described in one embodiment.

[0083] Figure 13 And Figure 14 It shows an ion source connected to a chamber through the adapter described in the second example.

[0084] Figure 15 It is a view of a chamber with the adapter described in the second example connected to one of its ports.

[0085] Figure 16 It is a plan view of the ion formation system described in one embodiment.

[0086] Figure 17 It is a side view of the ion formation system described in one embodiment.

[0087] *Reference Numerals*

[0088] 1: Target object 10: Chamber 20: Service port

[0089] 30: Viewing port 40: Process port

[0090] 200: Ion formation device 210: Ion source 211: Source body

[0091] 212: Output part 220: Port coupling member 221: First region

[0092] 222: Second region 223: Port coupling frame 225: Perspective window coupling frame

[0093] 226: Through hole 227: Adapter 228: First connection member

[0094] 228a: Through hole connection member 228b: Output pipe extension member 228c: Port connection member

[0095] 228d: Baffle support member 228e: Baffle support length adjustment part 229: Second connection member

[0096] 310: Anode electrode 320: Cathode electrode 322: Central cathode electrode

[0097] 324: Edge cathode electrode 326: Cathode electrode coupling part 330: Output housing

[0098] 331: Housing joint part 332: Coupling component 340: Baffle

[0099] 341: Baffle connection part 400: Ion formation system Detailed implementation manners

[0100] Hereinafter, local embodiments of the present invention will be described in detail with reference to schematic diagrams. It should be noted that when attaching reference signs to the components in the respective drawings, even if the same components are shown in different drawings, they are preferably given the same signs as much as possible. Also, when describing the present invention, if a detailed description of related well-known configurations or functions is considered to obscure the gist of the present invention, the detailed description thereof will be omitted.

[0101] Also, when describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. Such terms are only used to distinguish the components from other components, and do not define the essence, order, or sequence of the components due to such terms. It should be understood that when a component is described as being "connected", "coupled", or "connected to" another component, the component may be directly connected or connected to the other component, but other components may also be "connected", "coupled", or "connected to" between the respective components.

[0102] Figure 1 A chamber that provides a specific process implementation space for an object in a vacuum state is shown.

[0103] As Figure 1 shown, in the chamber 10 under a high vacuum state, a specific process can be performed on the object 1.

[0104] The process technology field understands the pressure range of 10 -3 to 10 -9 Torr as a high vacuum state. In the high vacuum state, most air molecules are removed, and almost no mutual collisions occur between ordinary gases and gas molecules. In addition to the high vacuum state, it can be divided into a medium vacuum state and a low vacuum state. Regarding the medium vacuum state, it is generally understood to be equivalent to a pressure range of 1 to 10 -3 Torr, while the low vacuum state can be understood as a pressure range of 1 Torr in the atmospheric pressure. The medium vacuum state can be understood as suitable for evaporation, drying, and local coating processes, etc. As is well known, the low vacuum state is used for commercial purposes such as vacuum cleaners and vacuum packaging machines.

[0105] As is well known, various processes in the process technology field are completed in a high vacuum state.

[0106] Typically, it is the high-vacuum deposition technology. The high-vacuum deposition technology refers to the process in a vacuum atmosphere where the precursor of the substance to be deposited is evaporated in a gaseous state and a condensed phase of a thin film is formed on the substrate surface. This process can be used to transfer a substance from one surface to the surface of a target object and is completed in a high-vacuum state. Therefore, it is also called high-vacuum deposition. The high-vacuum deposition technology can be used in the manufacturing of semiconductors, optical coatings, the preparation processes of various sensors and electronic devices, for the extreme refining of substances or obtaining extremely thin coatings.

[0107] In high-vacuum deposition, the most common ones include Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD), etc. PVD can include the process of physically evaporating a substance and then transferring its vapor to the target object. CVD can include the process of making the substance to be deposited into a gaseous state, then placing its gas on the target object (1), and then causing a deposition chemical reaction to occur.

[0108] In Physical Vapor Deposition (PVD), there are processes such as evaporation, sputtering, ion plating, etc. In Chemical Vapor Deposition (CVD), there are processes such as APVCD, LPCVD, PECVD, HDPCVD, ALCVD, etc.

[0109] In an example of the present invention, the specific process implemented in the chamber (10) can include at least one of the vacuum Physical Vapor Deposition (PVD) and vacuum Chemical Vapor Deposition (CVD) processes. Preferably, it can be vacuum Physical Vapor Deposition (PVD). More preferably, it can be evaporation.

[0110] Moreover, an organic matter deposition process can be implemented on the target object 1 in the chamber 10. The organic matter deposition process is usually completed in a high-vacuum state. The organic matter deposition process requires the purity of the organic matter to be kept constant. In a high-vacuum state, the interaction with other gases is minimized. Therefore, it is more conducive to maintaining the purity of the organic matter. Also, in a high-vacuum state, a high-quality coating with the desired thickness and structure can be prepared, and this characteristic is beneficial in the organic matter deposition process. And in a high-vacuum state, molecules can move in a one-way straight line from the source to the target object 1. In a high-vacuum state, there are few collisions or reactions with other gases, and the deposition efficiency is high. This is also one of the reasons for applying the process in a high-vacuum state to the organic matter deposition process.

[0111] The chamber 10 may include or be connected to a high-vacuum state maintaining device. For example, the chamber 10 may include a vacuum gauge, which is used to extract the gas in the chamber 10 to form a vacuum state, and is also connected to a maintaining vacuum pump to continuously monitor and detect the pressure in the chamber 10.

[0112] In addition, the chamber 10 is not limited to a process chamber, and may include a non-process chamber, and may also include various chambers applied in a vacuum state.

[0113] In order to implement a specific process in the chamber 10, the chamber 10 may be formed with a plurality of ports 20, 30, 40.

[0114] The chamber 10 may be formed with a process port 40 (Process Port). The process port 40 may be a connection point directly related to the specific process implemented in the chamber 10. Through the process port 40, gases, liquids or materials required for a specific process may be introduced into the chamber 10. Or, in order to implement a specific process, a device for detecting or analyzing the state in the chamber 10 may be connected to the process port 40. In order to meet the requirements necessary for a specific process, the process port 40 may be designed in a supporting manner, and the possibility of being restricted for other uses is high. For example, the process port 40 may be a port for transporting reaction gases in chemical vapor deposition, a port for transporting target materials in physical vapor deposition, etc.

[0115] The chamber 10 may be formed with a service port 20 (Service Port). The service port 20 may be a connection point related to the maintenance of the chamber 10. The service port 20 may be used to connect to public and auxiliary devices, such as a vacuum pump, a cooling system, a power supply device, a vacuum gauge, etc.

[0116] The chamber 10 may be formed with a view port 30 (View Port). Maintenance personnel may directly visually observe the process conditions inside the chamber 10 through the view port 30. Or, a management device (such as a camera or other optical device) is connected to the view port 30 for maintenance personnel to remotely monitor the process conditions in the chamber 10. The view port (30) includes a perspective window, which may be made of materials such as tempered glass, ceramics, industrial diamonds, quartz, industrial sapphires, and reinforced plastics. This material can withstand extreme environments, such as high vacuum and high temperature, and also has high optical transparency. In addition, the view port 30 may have a sealing structure to prevent vacuum leakage so as not to affect the high-vacuum state in the chamber 10.

[0117] As Figure 1 shown, the service port 20 is located higher than the view port 30, but this is not limited, and the service port 20 and the view port 30 may be arranged at different positions.

[0118] A specific process is completed within the chamber 10 including this structure and device. At this time, the formation of static electricity on the target object 1 causes problems.

[0119] There are various reasons for the formation of static electricity on the target object 1. For example, static electricity can be formed due to friction between the target object 1 and other objects. Static electricity can also be formed due to the formation of an unbalanced charge distribution during the deposition or etching process of a specific process step, or an insulating layer can be configured on the target object 1, resulting in the hindrance of charge migration, the formation of static electricity, and further accumulation.

[0120] This static electricity can also form a voltage high enough to damage the microstructure of the target object 1, generate a force to pull or push microparticles in the chamber 10 towards or away from the target object 1, thereby causing process defects. In addition, it will also affect the electrical characteristics of the target object 1 and reduce the overall performance of the process device.

[0121] To solve the above problems, the embodiments of this specification provide an ion formation device, which is used to remove static electricity in the chamber 10, especially the static electricity formed on the target object 1. This ion formation device has the least influence on the process conditions in the chamber 10, so that the influence of the ion formation device on the specific process in the chamber 10 is minimized. Moreover, the modification of the chamber 10 is minimized, and the existing chamber 10 can be left unchanged while adding an ion formation device.

[0122] The ion formation device can form ions in the internal space of the chamber 10 by using the high-vacuum state of the chamber 10 without further transporting additional working gas.

[0123] The ion formation device includes an ion source, and an electric field can be formed between the electrodes that can be configured on the ion source. The electrons detached from one of the electrodes of the ion source electrodes are accelerated in the electric field between the electrodes and output. The accelerated electrons collide with gas molecules in the high-vacuum state in the chamber 10, ionize the gas molecules, and form multiple ions. And these ions can remove the static electricity formed on the target object 1 while migrating towards the target object 1. This phenomenon in the high-vacuum state is also called Townsend discharge, but the present invention is not limited thereto.

[0124] This ion formation device does not further transport additional working gas and does not include an additional vacuum device. Therefore, the influence on the process conditions in the chamber 10 can be minimized. Further, this ion formation device does not further transport additional working gas and does not include an additional vacuum device. Therefore, the structure can be simplified and the modification of the chamber 10 can be minimized.

[0125] To minimize the modification of the chamber 10, the ion source can be combined with the service port 20 or the viewing port 30.

[0126] Figure 2It is a view of the ion formation device combined with the chamber according to an embodiment.

[0127] As Figure 2 shown, the ion formation device 200 may include an ion source 210 and a port coupling member 220. The port coupling member 220 may be a device that supports the combination of the ion source 210 and the viewing port 30.

[0128] The port coupling member 220 may include: a first region configured with a viewing window for visual observation of the internal space of the chamber 10 by an observer; and a second region configured with a through hole for coupling the ion source 210. The first region and the second region may be fastened to the chamber 10 through a viewing port coupling frame.

[0129] The viewing window is disposed in the first region and may be rounded to facilitate tight combination with the first region.

[0130] The first region includes: a first - 1 region configured with a first viewing window for observing one side of the internal space of the chamber 10; and a first - 2 region configured with a second viewing window for observing the other side of the internal space of the chamber 10. The first - 1 region and the first - 2 region may be oppositely arranged. Moreover, the first - 1 region and the first - 2 region may include a viewing window coupling frame to facilitate fastening the viewing window to the chamber 10.

[0131] The second region may be disposed between the first - 1 region and the first - 2 region. And the second region may include an adapter for coupling the ion source 210 to the through hole. Among them, the adapter may include a first connection member coupled to the through hole and a second connection member coupled to the output portion of the ion source 210. Further, the through hole and the output portion of the ion source 210 may have different cross - sectional sizes.

[0132] Moreover, the ion formation device 200 may include a service port coupling member (not shown) instead of the port coupling member 220. The service port coupling member (not shown) may be a device that supports the combination of the ion source 210 and the service port 20. In one embodiment, without additionally providing a service port coupling member (not shown), a partial structure of the ion source 210 may replace the function of the service port coupling member (not shown).

[0133] Furthermore, the ion formation device 200 may further include means for adjusting the ion output direction so that ions are formed along the direction of the target 1 for implementing a specific process.

[0134] The ion formation device 200 may include an adapter for connecting a port of the chamber 10 to the ion source 210. The adapter may include: a first connection member combined with a through-hole formed in a port of the chamber; and a second connection member combined with an output portion exposing the anode electrode. Among them, the through-hole combined with the first connection member and the output portion combined with the second connection member may have cross-sections of different sizes.

[0135] The first connection member may include: a through-hole connection member connected to the through-hole, and an output pipe extension member for extending an output pipe formed inside the through-hole connection member.

[0136] In addition, when ions are output from the output pipe, the output force can be adjusted by widening or narrowing the output direction.

[0137] The first connection member and the second connection member may have a plurality of holes for combining coupling components. And, the first connection member may include a first seal made of a flexible material disposed opposite to the through-hole, and the second connection member may include a second seal made of a flexible material disposed opposite to the output portion.

[0138] The first connection member may further include a baffle support member to facilitate the setting of a baffle towards the inner space direction of the chamber 10. Among them, the baffle may be circular, rectangular, conical, or polygonal with at least one groove, and ions can be output along the direction with the groove. And, the baffle and the baffle support member may be separated and connected by a baffle connection portion.

[0139] The ion source 210 may include a source body 211 and an output portion 212.

[0140] The source body 211 may include a power supply device. The power supply device may apply a specific voltage to the electrodes arranged in the output portion 212. Among them, the specific voltage may be a high voltage, which may be a voltage equivalent to several hundred to several thousand volts. The power supply device may receive a high voltage from the outside through a cable and then apply it to the electrodes. And, after receiving a voltage with a voltage level lower than the high voltage from the outside, it may increase the voltage level through voltage transformation and then apply it to the electrodes.

[0141] In order to prevent electromagnetic waves generated by the power supply device, etc. from spreading to the outside including the chamber 10, the source body 211 may be surrounded by a metal shell.

[0142] In the output portion 212, it may be open towards the service port 20 side and closed on the other side. The output portion 212 may communicate with the inner space of the chamber 10 in a high vacuum state through the service port 20, and in addition to this space, it may not communicate at all. For example, the output portion 212 does not communicate with the source body 211, and may not communicate directly with the external space of the chamber 10.

[0143] When the internal space of the chamber 10 is maintained in a high vacuum state (e.g., 10 -3 to 10 -9 torr, preferably, 10 -5 to -9 10 torr), the internal atmosphere of the output portion 212 connected thereto can also be maintained in a high vacuum state. Therefore, the ion forming device according to an embodiment does not further transport additional working gas and does not include an additional vacuum device, and thus, can minimize the influence on the process conditions of the chamber 10. Further, the ion forming device according to an embodiment does not further transport additional working gas and does not include an additional vacuum device, and thus, can simplify the structure and minimize the modification of the chamber 10.

[0144] In this high vacuum state atmosphere, when a specific voltage is applied to the electrode of the output portion 212 from the source body 211, ions can be formed in the internal space of the chamber 10 in the high vacuum state.

[0145] The ions formed in the internal space of the chamber 10 can make the target object 1 achieve antistatic while contacting the target object 1.

[0146] The chamber 10 and the internal space of the output portion are in mutual communication and share a vacuum state of 10 -3 to 10 -9 torr, preferably, can share a vacuum state of 10 -5 to 10 -9 torr.

[0147] The chamber 10 can perform a specific process that requires a vacuum. Among them, the specific process can include at least one of vacuum PVD (Physical Vapor Deposition) and vacuum CVD (Chemical Vapor Deposition) processes for depositing substances on the target object 1. And the specific process can further include a vacuum process for depositing an organic substance on the target object. To perform such a specific process, the chamber 10 can maintain a vacuum state.

[0148] The vacuum state can be 10 -3 to 10 -9 torr, preferably, can be 10 -5 to 10 -9 torr.

[0149] The chamber 10 and the internal space of the output portion are in mutual communication, and thus, a vacuum pump and an ionized gas injection device may not be provided.

[0150] The chamber 10 may include a service port 20 for connecting to utility and auxiliary devices and a view port 30 through which the interior of the chamber can be visually observed.

[0151] The output portion 212 may further include an opening that opens toward the side of the service port 20 or the view port 30, and the chamber 10 and the output portion 212 may communicate through the opening. Specifically, the chamber 10 and the output portion 212 are joined by a coupling portion provided at the edge of the opening.

[0152] The coupling portion includes at least one selected from the group consisting of a service port coupling member (not shown), a port coupling member (220), a housing engagement portion, a coupling component, and a seal. The chamber 10 and the output portion 212 are tightly joined by the coupling portion to block the inflow of fluid from the outside.

[0153] Figure 3 is a view of a side cross-section of the ion source according to one embodiment, Figure 4 is a partial top view of the ion source according to one embodiment.

[0154] As Figure 3 and Figure 4 shown, the ion source 210 may include a source body 211 and an output portion 212.

[0155] The output portion 212 may include an anode electrode 310, a cathode electrode 320, an output housing 330, etc.

[0156] The output housing 330 may have the following structure: the side facing the service port 20 or the view port 30 is open, and this side is closed. The output housing 330 may form a space for internally mounting the anode electrode 310 and the cathode electrode 320. This space is open on one side to facilitate communication with the interior space of the chamber in a high-vacuum state, and is closed on the other side.

[0157] The output housing 330 may include a housing engagement portion 331 formed side by side with the chamber frame. The housing engagement portion 331 is tightly joined to the chamber frame through the port coupling member 220, thereby preventing the interior of the output housing 330 from directly communicating with the external space of the chamber. In order to tightly join the chamber frame of the housing engagement portion 331, a coupling component 332, such as a bolt, may be applied, and a seal, such as an O-ring, may be further provided on the joint surface.

[0158] The space formed within the output housing 330 may accommodate the anode electrode 310 and the cathode electrode 320.

[0159] The cathode electrode 320 may include a central cathode electrode 322, an edge cathode electrode 324, a cathode electrode coupling portion 326, etc. The central cathode electrode 322 may be located at the center of the opening surface of the output housing 330. When viewed from the side of the viewing port 30, the central cathode electrode 322 is located at the center of the opening of the viewing port 30. The edge cathode electrode 324 may be disposed at the edge of the opening surface of the output housing 330. The edge cathode electrode 324 may be formed along the edge of the opening surface of the output housing 330. When the opening surface is circular, the edge cathode electrode 324 may be in the shape of a circular-hollow donut.

[0160] The central cathode electrode 322 and the edge cathode electrode 324 may be electrically connected through the cathode electrode coupling portion 326 and may have the same electric potential. A magnet may be further disposed inside the cathode electrode coupling portion 326 or inside the central cathode electrode 322 or inside the edge cathode electrode 324. The magnetic field formed by the magnet affects the movement of the electrons emitted by the cathode electrode 320, adjusting the migration direction or the moving speed of the electrons.

[0161] The power supply device is disposed in the source body 211 and can apply a specific voltage to the anode electrode 310. Moreover, an electric field is formed between the anode electrode 310 and the cathode electrode 320 due to this specific voltage, and ions are formed in the internal space of the chamber due to this electric field.

[0162] The output unit 212 may not have an additional cooling device or an additional working gas delivery device. In the prior art, in order to cool the anode electrode, sometimes an additional cooling device coupled to the anode electrode is attached. However, the ion source 210 according to an embodiment utilizes the atmosphere in a high vacuum state, consumes less power, and consequently generates less heat. Therefore, an additional cooling device is not required. Moreover, in the prior art, in order to form ions, sometimes an additional working gas delivery device is further included. However, the ion source 210 according to an embodiment utilizes the atmosphere in a high vacuum state. Therefore, ions can be formed without further delivering an additional working gas.

[0163] The cathode electrode 320 includes: a first cathode electrode disposed on one side of the edge of the opening portion that is open toward the chamber 10; a third cathode electrode disposed on the other side of the edge of the opening portion; and a second cathode electrode disposed at the center of the opening portion, and the electrode spacing between the anode electrode 310 and the cathode electrode 320 determines the output direction of the ions.

[0164] The ion source 210 may be combined with ports other than a specific process application port. Specifically, the ion source 210 may be combined with the service port 20 or the viewing port 30. The service port 20 and the viewing port 30 may be disposed at a height different from that of the target 1. Therefore, it is necessary to adjust the output direction of the ions output by the ion source 210.

[0165] The electrode spacing may include: a first electrode spacing between the anode electrode 310 and the first cathode electrode, a second electrode spacing between the anode electrode 310 and the second cathode electrode, and a third electrode spacing between the anode electrode 310 and the third cathode electrode.

[0166] Among them, the lengths of at least two selected from the first electrode spacing, the second electrode spacing, and the third electrode spacing may be different. Thus, the output of ions can be deflected towards the side where the cathode electrode with the shortest electrode spacing among the first electrode spacing, the second electrode spacing, and the third electrode spacing is located.

[0167] Moreover, the target 1 is arranged at a distance from the ion source 210, and the target 1 can be arranged on the extension line on the side where the cathode electrode with the shortest electrode spacing among the first electrode spacing, the second electrode spacing, and the third electrode spacing is located.

[0168] Preferably, the length of the first electrode spacing may be the longest, and the length of the third electrode spacing may be the shortest. Thus, the output of ions can be deflected towards the side where the third cathode electrode is located.

[0169] Moreover, the target 1 is arranged at a distance from the ion source 210, and the target 1 can be arranged on the extension line on the side where the third cathode electrode is located.

[0170] The ion formation device 200 can determine the output direction of ions according to the shape of the edge cathode electrode 324.

[0171] A part of the periphery of the edge cathode electrode 324 is conical, and the remaining periphery can be cylindrical with a constant thickness. Specifically, in the conical part of the edge cathode electrode 324, the periphery in the direction towards the output part 212 has a constant thickness, and the periphery in the direction towards the chamber 10 is locally thin. Therefore, ions can be output along the conical part of the edge cathode electrode 324. And the degree of ion diffusion can be determined according to the inclination angle of the conical part of the edge cathode electrode 324.

[0172] Moreover, the edge cathode electrode 324 is cylindrical, and the inner diameter can increase gradually in the direction towards the chamber 10. Therefore, due to the shape of the edge cathode electrode 324, the output of ions can be diffused in a horn shape.

[0173] In addition, a plurality of coupling grooves can be arranged on the edge cathode electrode 324 in the direction towards the output part 212.

[0174] The output unit 212 may further include a baffle plate, which is located on one side of the cathode electrode 320 along the direction of ion output to prevent the ions from directly hitting the target 1. Specifically, the baffle plate is located on the central cathode electrode 322 along the direction of ion output, so that the ions diffuse and form on the entire surface of the target 1.

[0175] The baffle plates are connected by a baffle plate connection part so as to be separated from the central cathode electrode 322. The baffle plate connection part may include a baffle plate connection length adjustment part whose length can be adjusted to control the degree of ion diffusion. And the baffle plate connection part may further include an inclined unit for adjusting the angle of the baffle plate to control the ion output direction. Among them, the inclined unit may include a hinge housing, a rotary hinge and a fastening unit.

[0176] The baffle plate may be circular, rectangular, conical and polygonal with at least one groove. At this time, the ions can be output along the direction with the groove.

[0177] The ion forming device 200 may further include an ion sensor, which can detect the ion concentration at a place in the internal space of the chamber 10. The ion sensor may be arranged in the internal space of the chamber 10 through a support rod extending in the internal space direction of the chamber 10.

[0178] In addition, the ion forming device 200 may include an adapter for connecting one port of the chamber 10 and the ion source 210. The adapter may include: a first connection member, which is combined with the through hole formed at one port of the chamber; and a second connection member, which is combined with the output part 212 exposing the anode electrode 310.

[0179] The first connection member may further include a baffle plate support member to facilitate the arrangement of the baffle plate along the internal space direction of the chamber 10. And the baffle plate and the baffle plate support member may be separated and connected by a baffle plate connection part. Among them, the ion sensor is located on one side of the baffle plate and can detect the ion concentration in the internal space of the chamber 10.

[0180] The monitoring cable is connected to the ion sensor and can be arranged along the baffle plate connection part. The ion sensor is connected to the ion source control device located outside the chamber 10 through the monitoring cable, and the monitoring cable can be arranged through one side of the first connection member of the adapter.

[0181] The ion forming device 200 can be controlled by the following method, that is, the ion concentration at a place in the internal space of the chamber 10 is detected by the ion sensor arranged in the internal space of the chamber 10, and according to the detected ion concentration, the voltage level applied from the source body 211 to the anode electrode 310 is adjusted to adjust the generation amount of ions generated by the ion forming device 200.

[0182] When the detected ion concentration is below the reference concentration, the voltage level applied from the source body 211 to the anode electrode 310 can be increased to enhance the ion generation amount. Conversely, when the detected ion concentration exceeds the reference concentration, the voltage level applied from the source body 211 to the anode electrode 310 can be restored to the initial value to reduce the ion generation amount.

[0183] Figure 5 and Figure 6 is a view showing the combination of the ion source and the chamber through the adapter described in the first example. Figure 7 is a cross-sectional view showing the combination of the ion source and the chamber through the adapter described in the first example. Figure 8 is a structural diagram of an ion formation device including the adapter described in the first example. Figure 9 is an oblique view of the adapter described in the first example.

[0184] As Figures 5 to 9 shown, the ion formation device 200 and the ion source 210 can be combined with one port of the chamber 10 through the adapter 227. Among them, one port of the chamber 10 can be at least one of the service port 20, the viewing port 30, and the process port 40, but is not limited thereto.

[0185] The ion source 210 is combined through the adapter 227, and a baffle 340 can be provided on one side of the adapter 227 along the direction towards the chamber 10. Therefore, the ions output by the output unit are diffused through the baffle 340, thereby preventing the ions from directly irradiating the target object 1, and diffusing to the entire surface of the target object 1, thereby effectively removing static electricity.

[0186] In addition, a baffle connection portion 341 is provided on one side of the adapter 227 to dispose the baffle 340 at a distance from the adapter 227, and the baffle 340 and the adapter 227 are connected through the baffle connection portion 341.

[0187] The adapter 227 may include: a first connection member 228 that communicates with a through hole 226 formed in one port of the vacuum chamber 10; and a second connection member 229 that is combined with the ion source 210 communicated through the through hole 226.

[0188] The first connection member 228 may include: a through hole connection member 228a that is connected to the through hole 226; an output pipe extension member 228b that is used to extend the output pipe formed in the through hole connection member 228a; and a port connection member 228c that is combined with one port of the chamber 10.

[0189] The through hole connection member 228a may protrude more than the port connection member 228c, or may be formed on the same plane as the port connection member 228c.

[0190] When the length of the output tube extension member 228b of the adapter 227 is short, the output ions have few collisions between ions or between ions and internal gas molecules, resulting in a strong output force. However, when the length of the output tube extension member 228b of the adapter 227 is long, the output ions have many collisions between ions or between ions and internal gas molecules, resulting in a weak output force. That is, the output force of the output ions can be adjusted by the length of the output tube extension member 228b of the adapter 227.

[0191] The adapter 227 may include: a first connection member 228, which is combined with a through hole 226 formed at one port of the chamber 10; a second connection member 229, which is combined with an output portion 212 exposing the anode electrode 310. Among them, the chamber 10 is combined with the first connection member 228 of the adapter 227, and one port thereof may be at least one of the service port 20, the viewing port 30, and the process port 40, but is not limited thereto.

[0192] The through hole 226 is combined with the first connection member 228, and the cross-sectional size thereof is different from that of the output portion 212 combined with the second connection member 229. For example, the size of the output portion 212 may be larger or smaller than that of the through hole 226. Therefore, the adapter 227 can be applied to tightly combine the through hole 226 with different cross-sectional sizes with the output portion 212. Thus, it is possible to achieve tight combination without separately modifying the chamber 10 and the ion forming device 200.

[0193] The first connection member 228 may include: a through hole connection member 228a, which is connected to the through hole 226; an output tube extension member 228b, which is used to extend the output tube formed in the through hole connection member 228a; and a port connection member 228c, which is combined with one port of the chamber 10. That is, one port of the chamber 10 can be tightly combined through the port connection member 228c, and ions can be output to the chamber 10 through the internal spaces of the through hole connection member 228a and the output tube extension member 228b.

[0194] The through hole connection member 228a is tightly combined with the through hole 226, thereby preventing the inflow of external fluid and improving the durability of the combined portion of the adapter 227 and one end of the chamber 10.

[0195] When outputting ions, the output direction can be widened or narrowed through the output tube, thereby adjusting the output force.

[0196] In one example, when the diameter of the through-hole 226 is smaller than the diameter of the output portion 212, the diameter of the output pipe formed by the internal space of the through-hole connecting member 228a of the first connecting member 228 connected to the through-hole 226 and the output pipe extending member 228b can be smaller than the diameter of the output portion 212 in the ion source 210. Therefore, the ions output by the output portion 212 pass through the through-hole smaller than the diameter of the output portion 212, resulting in an increase in the output amount per unit area of the ions and becoming stronger.

[0197] In another example, when the diameter of the through-hole 226 is larger than the diameter of the output portion 212, the diameter of the output pipe formed by the internal space of the through-hole connecting member 228a of the first connecting member 228 connected to the through-hole 226 and the output pipe extending member 228b can be larger than the diameter of the output portion 212 in the ion source 210. Therefore, the ions output by the output portion 212 pass through the through-hole larger than the diameter of the output portion 212, resulting in a decrease in the output amount per unit area of the ions and becoming weaker.

[0198] Ions are output through the output portion 212, pass through the second connecting member 229 and pass through the channel with a narrowed diameter corresponding to 324 like the edge cathode electrode, and pass through the first connecting member 228 through a narrower channel. That is, while the ions pass through the adapter 227, the output channel can gradually become narrower. The narrower the channel, the stronger the output force of the ions. In addition, as described above, the ions can widen the output direction via the output pipe.

[0199] The first connecting member 228 and the second connecting member 229 can have a plurality of holes for coupling to the coupling member 332, such as bolts. Specifically, in the port connecting member 228c of the first connecting member 228, the edge can have a plurality of holes spaced at a certain interval to facilitate connection to one port of the chamber 10. Also, the edge of the second connecting member 229 can have a plurality of holes spaced at a certain interval to facilitate connection to the output portion 212.

[0200] The first connecting member 228 can include a first seal made of a flexible material disposed opposite the through-hole 226, and the second connecting member 229 can include a second seal made of a flexible material disposed opposite the output portion 212. Specifically, the port connecting member 228c of the first connecting member 228 can include a first seal made of a flexible material opposite the through-hole 226 to facilitate tight connection to one port of the chamber 10. Also, the second connecting member 229 can include a second seal made of a flexible material disposed opposite the output portion 212 to tightly connect to the output portion 212. Thereby, the ion forming device 200 is tightly connected to the chamber 10, preventing the inflow of external fluid and keeping the internal space in a vacuum state.

[0201] The first connecting member 228 may further include a baffle support member 228d to facilitate the arrangement of the baffle 340 along the direction of the internal space of the chamber 10.

[0202] The baffle support member 228d may be located on one side of the through-hole connecting member 228a and arrange the baffle 340. Specifically, the baffle support member 228d may be located on the edge side of the through-hole connecting member 228a so as not to obstruct the traveling direction of the ions output through the through-hole 226. The baffle support member 228d may be connected to the baffle connection portion 341 by welding or screwing. When necessary, the edge of the through-hole connecting member 228a may be provided with a plurality of baffle support members 228d at a certain interval to facilitate the arrangement of a plurality of baffles 340.

[0203] The baffle 340 may be circular, rectangular, conical, or polygonal with at least one baffle groove, and ions may be output along the direction where the baffle groove is provided. Specifically, a large amount of ions may be output along the direction where the baffle 340 is formed and the baffle groove is provided, while a small amount of ions may be output in the direction without the baffle groove, thereby adjusting the output direction and output strength of the ions.

[0204] The baffle 340 and the baffle support member 228d may be connected to each other through the baffle connection portion 341.

[0205] The baffle connection portion 341 may include a baffle connection length adjustment portion capable of adjusting the length to facilitate the control of the ion diffusion degree. For example, when the length of the baffle connection portion is short, the ions may diffuse wider, and when the length of the baffle connection portion is long, the ions may diffuse narrower.

[0206] Specifically, the baffle 340 may be combined with the ion source 210 through the baffle connection portion 341. The baffle connection portion 341 may include a baffle connection length adjustment portion that adjusts the length in a sliding manner. When the length is adjusted and shortened through the baffle connection length adjustment portion, the porous baffle 340 may abut against the opening portion to form an integral shape, and when the length is adjusted and lengthened through the baffle connection length adjustment portion, the porous baffle 340 may be arranged at a distance from the ion source 210.

[0207] Moreover, the portion of the baffle connection portion 341 connected to the baffle 340 may be provided with an inclined unit for adjusting the setting angle of the baffle 340. Thus, the angle of the baffle 340 can be adjusted so that the ions are output toward the target 1.

[0208] That is, through the setting angle of the baffle 340, while the ions can be output toward the target 1, the baffle 340 can also control the ions from directly irradiating the target 1 and diffusing, thereby preventing the target 1 from being damaged and effectively removing the static electricity generated by the target 1.

[0209] The degree of ion diffusion, i.e., the output intensity, can be adjusted according to the cross-sectional area of the baffle 340. Specifically, when the cross-sectional area of the baffle 340 is small, the degree of ion diffusion is small and the output intensity becomes stronger. However, when the cross-sectional area of the baffle 340 is large, the degree of ion diffusion is large and the output intensity is weak.

[0210] Figure 10 is a front-side perspective view of the adapter described in the second example, Figure 11 is a rear-side perspective view of the adapter described in the second example, Figure 12 is an enlarged view of the baffle support member described in one embodiment, Figure 13 and Figure 14 shows an ion source connected to the chamber through the adapter described in the second example, Figure 15 is a view in which the adapter described in the second example is connected to one port of the chamber.

[0211] As Figures 10 to 15 shown, the adapter 227 may include: an output tube extension member 228b that communicates with a through-hole 226 formed in one port of the chamber 10; and a second connection member 229 that is combined with the ion source 210.

[0212] The output tube extension member 228b may be inclined to facilitate adjusting the output direction of the ions output by the ion source 210. Specifically, the output tube extension member 228b is connected to the port coupling frame 223 so as to communicate with the chamber 10, and the port coupling frame 223 is directly combined with one port of the chamber 10. At this time, the output tube extension member 228b is combined with the port coupling frame 223 in an inclined shape, whereby the output direction of the ions output by the ion source 210 connected to the second connection member 229 can be adjusted.

[0213] By adjusting the output direction of the ions output by the ion source 210 through the adapter 227, more ions can be generated at a specific position in the internal space of the chamber 10. Therefore, when a specific process that may generate non-uniform static electricity is implemented in the chamber 10, the inclination of the output tube extension member 228b can be adjusted to effectively remove static electricity.

[0214] The output tube extension member 228b may be inclined along at least one of the upper, lower, left, and right directions. The inclination direction of the output tube extension member 228b can be determined according to the position of the target object 1, the specific process implemented in the internal space of the chamber 10, etc.

[0215] In addition, the inclination direction of the output tube extension member 228b may be a direction that does not block the position where the perspective window is disposed. For example, as Figure 15As shown, the output tube extension member 228b can be inclined in at least one direction of the lower side, the left side, and the right side, and can not be inclined in the upper side direction where the perspective window is disposed. Further, when the perspective window is disposed on the lower side, the output tube extension member 228b can also be inclined in at least one direction of the upper side, the left side, and the right side.

[0216] In the output tube extension member 228b, in order to effectively remove the static electricity on the surface of the target object 1 in the internal space of the chamber 10, the target object 1 can be disposed on the extension line of the output tube extension member 228b. Thus, the static electricity of the target object 1 can be effectively removed by the ions output from the ion source 210. In addition, in order to prevent damage caused by the direct irradiation of the ions on the surface of the target object 1, an ion diffusivity adjusting device can be applied. For example, a baffle is disposed at the center of the through hole 226 for outputting ions to prevent the ions from directly irradiating the target object 1.

[0217] In addition, the output strength of the ions can be controlled by adjusting the length of the output tube extension member 228b. Specifically, when the length of the output tube extension member 228b is short, the output ions have less collision between ions or collision between ions and internal gas molecules, resulting in a strong output strength. However, when the length of the output tube extension member 228b is long, the output ions have more collision between ions or collision between ions and internal gas molecules, resulting in a weak output strength. That is, as Figure 13 and Figure 14 shown, the output strength of the output ions can be adjusted by the length of the output tube extension member 228b.

[0218] The adapter 227 can further include a baffle support member 228d to facilitate the arrangement of the baffle toward the internal space direction of the chamber 10.

[0219] The baffle can be located in the output direction of the ions to prevent the ions from directly irradiating the target object 1. Specifically, the baffle is located in the output direction of the ions to diffuse the ions, so that ions are formed on the entire surface of the target object 1.

[0220] The baffle is located at the center of the ion output channel, that is, the through hole 226, and can effectively control the output direction of the ions. Therefore, the baffle support member 228d can extend along the center direction of the through hole 226 so that the baffle is located at the center of the through hole 226.

[0221] In addition, the baffle support member 228d may include a baffle support length adjustment portion 228e capable of adjusting the position of the baffle. The adjustment can be performed through the baffle support length adjustment portion 228e to move the baffle closer to or farther from the central portion of the through hole 226. Depending on the position of the baffle, the concentration of ions formed in the internal space of the chamber 10 may change. Therefore, the baffle support length adjustment portion 228e can be applied to make different settings for the position of the baffle according to the specific process implemented in the chamber 10.

[0222] The baffle support member 228d can be fastened to the port coupling frame 223 through a groove formed on one side of the through hole 226. Thereby, the baffle support member 228d is fixed, and the baffle is stably arranged at the central portion of the through hole 226.

[0223] In addition, the output pipe extension member 228b may further include a plurality of baffle support members 228d to facilitate the arrangement of a plurality of baffles in the direction of the internal space of the chamber 10.

[0224] When the specific process implemented in the chamber 10 is likely to damage the surface of the target 1 or generate less static electricity, it is more beneficial to have less ions formed in the internal space of the chamber 10. Therefore, a plurality of baffle support members 228d can be provided on the output pipe extension member 228b, and thereby, a plurality of baffles are provided to reduce the amount of ions formed in the internal space of the chamber 10.

[0225] The baffle is located at the central portion of the ion output channel, that is, the through hole 226, so as to effectively control the output direction of ions. Therefore, a plurality of baffle support members 228d can extend along the direction of the central portion of the through hole 226 to position the baffle at the central portion of the through hole 226.

[0226] In addition, the viewing port 30 can be set according to the eye height of the observer to facilitate the visual observation of the internal space of the chamber 10 by the observer. Therefore, the setting position of the viewing port 30 can be different from the position and height of the target 1. Therefore, the ion forming device according to an embodiment of the present invention may be provided with an ion output direction adjustment means to output ions along the direction of the target 1 for implementing a specific process. Specifically, the ion output direction adjustment means includes a baffle, a beam director, an electrode shape, etc.

[0227] The second connection member 229 can be combined with the output portion 212 of the ion source 210.

[0228] The second connection member 229 may have a plurality of holes for combining coupling components. Thereby, the output portion 212 of the ion source 210 can be combined with the adapter 227.

[0229] The second connecting member 229 may include a flexible material seal disposed opposite the output portion 212 of the ion source 210. Thus, the ion source 210 can be tightly coupled to the chamber 10 to maintain the internal environments of the chamber 10 and the ion source 210.

[0230] In addition, the port coupling member 220 maintains its traditional function, that is, it provides information obtained by visual observation through the first region 221 provided with a viewing window, and at the same time, it also provides other functions, that is, it is combined with other devices through the second region 222 provided with through holes 226.

[0231] The port coupling member 220 may further include a port coupling frame 223, and the port coupling frame 223 may fasten the first region 221 and the second region 222 to the chamber 10.

[0232] The modification of the chamber 10 can be minimized through the port coupling frame 223, and other devices can be added without replacing the chamber 10.

[0233] In addition, the port coupling frame 223 may be sized equal to or larger than the viewing port 30 to facilitate tight coupling with the viewing port 30. And the port coupling frame 223 includes both the first region 221 and the second region 222, so that the first region 221 and the second region 222 are simultaneously fastened to the chamber 10.

[0234] Moreover, the viewing window may be rounded at the corners to facilitate tight coupling with the first region 221. The corners of the viewing window are rounded, so as to effectively combine the coupling component and the sealing component, tightly couple the viewing window to the first region 221, thereby preventing the inflow of external fluid and keeping the internal space of the chamber 10 in a vacuum state.

[0235] The viewing window may be made of a material with high durability to keep the internal space of the chamber 10 in a vacuum and prevent the conditions of a specific process from being changed by the external environment. Specifically, the viewing window may include at least one selected from the group consisting of ceramics, industrial diamonds, quartz, and industrial sapphires. Preferably, the viewing window may include ceramics.

[0236] The first region 221 may include a viewing window coupling frame 225 to facilitate fastening the viewing window to the chamber 10. The viewing window coupling frame 225 may be coupled to one side of the port coupling frame 223 to fasten the viewing window to the chamber 10.

[0237] Specifically, the port coupling framework 223 is in direct contact and combination with the chamber 10. The viewing window coupling framework 225 can be combined with the port coupling framework 223 to facilitate configuration along the direction where other devices coupled by the port coupling member 220 are located. Thus, the modification of the chamber 10 can be minimized or even the chamber 10 need not be replaced. Among them, other devices coupled by the port coupling member 220 may include an ion formation device 200.

[0238] The second region 222 can connect to other devices through the viewing port 30 in the chamber 10. Generally, other devices connected to the chamber 10 can control the conditions of a specific process implemented in the internal space of the chamber 10.

[0239] The second region 222 may include an adapter 227 for combining the ion source 210 with the through-hole 226. The adapter 227 can tightly combine other devices combined through the second region 222 with the chamber 10. Specifically, the adapter 227 not only combines the chamber 10, but also tightly combines other devices combined through the second region 222 with each other without additional modification.

[0240] In addition, the above content focuses on describing the viewing port 30, but is not limited thereto. Ports such as the service port 20 and the process port 40 provided in the chamber 10 can all apply the technology disclosed in the present invention.

[0241] Figure 16 is a top view of the ion formation system according to an embodiment, Figure 17 is a side view of the ion formation system according to an embodiment.

[0242] As Figure 16 and Figure 17 shown, an ion formation system 400 according to an embodiment may include: a plurality of ion sources 210a, 210b for forming ions in the chamber 10; and a plurality of adapters 227-1, 227-2 for communicating the plurality of ion sources 210a, 210b with the chamber 10.

[0243] Specifically, in order to effectively remove the static electricity generated by a specific process in the chamber 10, a plurality of ion sources 210a, 210b can be applied, and in order to communicate the plurality of ion sources 210a, 210b with the chamber 10, a plurality of adapters 227-1, 227-2 can be adopted.

[0244] The adapter 227 may include: an output tube extension member 228b connected to the port coupling framework 223; and a second connection member 229 combined with the output portion 212 of the ion source 210.

[0245] The output tube extension member 228b can be obliquely connected to the port coupling frame 223 to adjust the output direction of ions. The output direction of ions can be adjusted to generate more ions at a specific position in the internal space of the chamber 10. Therefore, when a specific process that generates non-uniform electrostatic states is implemented inside the chamber 10, the inclination of the output tube extension member 228b can be adjusted to effectively remove static electricity.

[0246] The output tube extension member 228b is connected to the port coupling frame 223, and it can be inclined in at least one direction among the upper side, lower side, left side, and right side. The inclination direction of the output tube extension member 228b can be determined according to the position of the target 1, the specific process implemented in the internal space of the chamber 10, etc.

[0247] In addition, the inclination direction of the output tube extension member 228b can be a direction that does not block the position where the perspective window is configured. For example, as Figure 15 shown, the output tube extension member 228b can be inclined in at least one direction among the lower side, left side, and right side, and can not be inclined in the upper side direction where the perspective window is configured. And when the perspective window is configured on the lower side, the output tube extension member 228b can also be inclined in at least one direction among the upper side, left side, and right side.

[0248] Moreover, the output tube extension members 228b of the multiple ion sources 210a, 210b can be inclined in different directions, so as to more easily adjust the concentration deviation of ions generated in the internal space of the chamber 10.

[0249] For example, as Figure 16 and Figure 17 shown for the multiple ion sources 210a, 210b, the output tube extension member 228b is tilted so that ions are generated and concentrated in a specific area in the internal space of the chamber 10, thereby effectively removing a large amount of static electricity generated in a specific area in the internal space of the chamber 10. Conversely, the output tube extension members 228b of the multiple ion sources 210a, 210b can be obliquely arranged to face different areas, so that fewer ions are generated in a specific area in the internal space of the chamber 10.

[0250] In addition, the length of the output tube extension member 228b can be adjusted to control the output strength of ions. Specifically, when the length of the output tube extension member 228b is short, the output ions have fewer collisions between ions or between ions and internal gas molecules, resulting in a strong output strength. However, when the length of the output tube extension member 228b is long, the output ions have more collisions between ions or between ions and internal gas molecules, resulting in a weak output strength. That is, as Figure 13 and Figure 14 shown, the output strength of the output ions can be adjusted by the length of the output tube extension member 228b.

[0251] The output tube extension member 228b may further include a baffle support member 228d to facilitate the arrangement of the baffle along the direction of the internal space of the chamber 10.

[0252] The baffle is located in the direction of ion output and can prevent ions from directly irradiating the target 1. Specifically, the baffle is located in the ion output direction to diffuse the ions, thereby forming ions on the entire surface of the target 1.

[0253] The baffle is located at the central part of the ion output channel, i.e., the through-hole 226, and can effectively control the ion output direction. Therefore, the baffle support member 228d can extend along the central part direction of the through-hole 226 so that the baffle is located at the central part of the through-hole 226.

[0254] In addition, the baffle support member 228d may include a baffle support length adjustment part 228e capable of adjusting the position of the baffle. The adjustment can be made through the baffle support length adjustment part 228e to move the baffle closer to or farther from the central part of the through-hole 226. According to the position of the baffle, the concentration of ions formed in the internal space of the chamber 10 may change. Therefore, the baffle support length adjustment part 228e can be applied to make different settings for the position of the baffle according to the specific process implemented in the chamber 10.

[0255] The baffle support member 228d can be fastened to the port coupling frame 223 through a groove formed on one side of the through-hole 226. Thereby, the baffle support member 228d is fixed, and the baffle is stably arranged at the central part of the through-hole 226.

[0256] In the above content, unless otherwise specifically stated to the contrary, terms such as "include", "constitute", or "have" mean including the component, and should be interpreted as further including other components rather than excluding other components. Unless otherwise defined, all terms, including technical or scientific terms, have meanings equivalent to the ordinary understanding of those of ordinary skill in the technical field to which the present invention pertains. Conventional terms, such as terms defined in a dictionary, should be interpreted as having meanings consistent with those in the relevant technical literature, and should not be interpreted as having overly idealized or overly formalized meanings unless clearly defined in the present invention.

[0257] The above content merely schematically describes the technical idea of the present invention. As long as those of ordinary skill in the technical field to which the present invention pertains can make various modifications and deformations without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are used for description rather than for limiting the technical idea of the present invention, and the scope of the technical idea of the present invention is not limited by such embodiments. The protection scope of the present invention should be interpreted according to the appended claims, and it should be interpreted that all technical ideas within the same scope should be included in the scope of the claims of the present invention.

Claims

1. An adapter-coupled ion forming device, characterized in that: include: An ion source, whose output part is connected to the chamber through a through hole, generates ions between the anode electrode and the cathode electrode by using a voltage supplied from the source body to the anode electrode of the output part, thereby forming ions in the internal space of the chamber, and removing static electricity on the surface of the target object by the formed ions; as well as The adapter includes a first connecting member and a second connecting member. The first connecting member is connected to a through hole formed at a port of a vacuum chamber, and the second connecting member is combined with the ion source connected through the through hole.

2. The adapter-coupled ion forming device according to claim 1, characterized in that: The first connecting member includes: a through hole connecting member connected to the through hole; an output pipe extending member used to extend the output pipe formed in the through hole connecting member; and a port connecting member combined with a port of the chamber.

3. The adapter-coupled ion forming device according to claim 2, characterized in that: When the ions are output from the output tube, the output strength can be adjusted by widening or narrowing the output direction.

4. The adapter-coupled ion forming device according to claim 2, characterized in that: The output tube extension member is inclined to facilitate adjustment of the output direction of ions.

5. The adapter-coupled ion forming device according to claim 4, characterized in that: The output pipe extension member may be inclined toward at least one direction of an upper side, a lower side, a left side, and a right side.

6. The adapter-coupled ion forming device according to claim 2, characterized in that: The output strength of the ions is controlled by adjusting the length of the output tube extension component.

7. The adapter-coupled ion forming device according to claim 2, characterized in that: The first connecting member further includes a baffle supporting member so as to arrange the baffle toward the inner space of the chamber, and the baffle supporting member extends toward the center of the through hole.

8. The adapter-coupled ion forming device according to claim 7, characterized in that: The baffle support member includes a baffle support length adjustment portion for adjusting a position of the baffle.

9. The adapter-coupled ion forming device according to claim 7, characterized in that: The first connection member further includes a plurality of baffle support members to facilitate disposing a plurality of baffles toward the inner space of the chamber.

10. The adapter-coupled ion forming device according to claim 1, characterized in that: The second connection member may be combined with a device having a cross-sectional area different from the cross-sectional area of ​​the through hole.

Images