Top adjusting circuit of single-wave 200G electro-absorption modulated laser optical module

Abstract

The invention discloses a topping circuit of a single-wave 200G electro-absorption modulated laser optical module, which belongs to the technical field of optical communication, and comprises a service module for transmitting service signals; and the top adjusting module is used for transmitting the top adjusting signal superposed on the service signal. By means of the scheme, programmable modulation signals with any frequency and top adjusting depth can be output, modulation information needing to be sent can be transmitted in a direct access memory transmission mode, and stable and efficient transmission of modulation data can be achieved. The problem that the stability of the top adjusting circuit of the laser optical module is insufficient is solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of optical communication, and particularly relates to a peak clipping circuit for a single-wavelength 200G electro-absorption modulated laser optical module. Background Art

[0002] With the continuous improvement of the requirements of the AI industry for high speed, low cost, and low power consumption of optical interconnection, the demand for single-wavelength 200G electro-absorption modulated laser optical modules has gradually emerged. It is mainly applied to 800G and 1.6T optical modules. Compared with the single-wavelength 100G solution, it has fewer channels and has strong potential advantages in terms of cost and yield, and is expected to promote the accelerated implementation of high-speed products such as 800G and 1.6T to meet the growing computing power and network interconnection needs in scenarios such as large data centers, supercomputing centers, backbone networks, 5G, and future networks.

[0003] Peak clipping is a key technical means for network operation and maintenance, that is, a small-amplitude peak clipping signal is superimposed on the optical wave at the sending end, and the peak clipping signal is demodulated at the receiving end to realize the network operation and maintenance function. When implementing the peak clipping function with a directly modulated laser, it is necessary to convert the peak clipping voltage signal into the Bias current signal of the laser to drive the laser. This conversion method requires using the backlight current of the laser as feedback information and using a closed-loop control method to achieve precise control of the peak clipping amplitude and ensure the stable and precise operation of the entire peak clipping and laser driving process. The electro-absorption modulated laser has obvious advantages over the directly modulated laser in terms of peak clipping technology. With its unique modulation method, it can achieve higher modulation rates and more precise signal modulation, and perform finer amplitude, phase, etc. adjustments on optical signals, effectively improving the accuracy and accuracy of peak clipping, so as to better meet the requirements for high-quality signal transmission in high-speed and large-capacity optical communication scenarios and ensure the stability and reliability of signal transmission. However, the peak clipping circuit of the existing electro-absorption modulated laser optical module still has the problem of insufficient stability. Summary of the Invention

[0004] In view of the above deficiencies in the prior art, the peak clipping circuit for a single-wavelength 200G electro-absorption modulated laser optical module provided by the present invention solves the problem of insufficient stability of the peak clipping circuit of the laser optical module.

[0005] In order to achieve the above invention purpose, the technical solution adopted by the present invention is as follows:

[0006] The peak clipping circuit for a single-wavelength 200G electro-absorption modulated laser optical module provided by the present invention includes:

[0007] A service module for transmitting service signals;

[0008] A peak clipping module for transmitting a peak clipping signal superimposed on the service signal.

[0009] Furthermore, the peak clipping module includes:

[0010] An MCU, which is used to generate a peak clipping signal and adjust the frequency of the peak clipping signal;

[0011] A step-down resistor sub-module, which is used to reduce the waveform amplitude of the peak clipping signal to obtain a square-wave peak clipping signal;

[0012] A filter circuit sub-module, which is used to convert the square-wave peak clipping signal into a sine-wave peak clipping signal and drive the electro-absorption modulator EAM of the electro-absorption modulated laser;

[0013] An electro-absorption modulated laser, which is used to transmit service signals and sine-wave peak clipping signals through the electro-absorption modulator EAM.

[0014] Furthermore, the step-down resistor sub-module includes a resistor R1, a resistor R2, and a digital potentiometer R3;

[0015] One end of the resistor R1 is connected to the output pin of the MCU; the other end of the resistor R1 is respectively connected to one end of the resistor R2 and the H end of the digital potentiometer R3; the other end of the resistor R2 is respectively connected to the L end of the digital potentiometer R3 and the filter circuit sub-module; the W end of the digital potentiometer R3 is connected to the filter circuit sub-module.

[0016] Furthermore, the filter circuit sub-module includes a capacitor C1, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C2, a capacitor C3, a capacitor C4, and an operational amplifier;

[0017] One end of the capacitor C1 is connected to the W end of the digital potentiometer R3; the other end of the capacitor C1 is respectively connected to one end of the resistor R4, one end of the resistor R5, and one end of the resistor R6; the other end of the resistor R4 is externally connected to a 3.3V voltage; the other end of the resistor R6 is respectively connected to one end of the resistor R7 and one end of the capacitor C3; the other end of the resistor R7 is respectively connected to one end of the capacitor C2 and the non-inverting input terminal of the operational amplifier; the other end of the resistor R5 is respectively connected to the other end of the resistor R2 and the other end of the capacitor C2, and is grounded; the other end of the capacitor C3 is respectively connected to the inverting input terminal, the output terminal of the operational amplifier, and one end of the capacitor C4; the other end of the capacitor C4 is connected to the electro-absorption modulated laser.

[0018] Furthermore, the electro-absorption modulated laser includes an electro-absorption modulator EAM and a distributed feedback laser DFB;

[0019] The input end of the distributed feedback laser (DFB) is externally connected to a bias current Ibias; the input end of the electro-absorption modulator (EAM) is connected to the other end of the capacitor C4 and externally connected to a power supply EABIAS; the output end of the electro-absorption modulator (EAM) is connected to the output end of the distributed feedback laser (DFB) and grounded.

[0020] The beneficial effects of the present invention are as follows: The peaking circuit of a single-wave 200G electro-absorption modulated laser optical module provided by the present invention is different from the peaking circuit for directly modulated lasers. The electro-absorption modulated laser can directly control the peaking signal transmitted by the electro-absorption modulator through a voltage signal, effectively improving the common-mode rejection ratio of the peaking signal of the laser optical module, enabling the laser to operate in a stable state, and at the same time avoiding the situation where the peaking function is affected due to reasons such as laser aging when converting the voltage signal into a current signal in a directly modulated laser, greatly improving the stability of the peaking circuit of the laser optical module.

[0021] Other advantages of the present invention will be analyzed in more detail in the subsequent embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the embodiments. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0023] Figure 1 It is a schematic diagram of the modules of the peaking circuit of a single-wave 200G electro-absorption modulated laser optical module in an embodiment of the present invention.

[0024] Figure 2 It is a circuit schematic diagram of the peaking module in an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all of them. Usually, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of the present invention provided in the following drawings is not intended to limit the scope of the claimed present invention, but only represents the selected embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0026] Such as Figure 1As shown in the figure, in one embodiment of the present invention, the present invention provides a peaking circuit for a single-wavelength 200G electro-absorption modulated laser optical module, including:

[0027] A service module for transmitting service signals;

[0028] A peaking module for transmitting a peaking signal superimposed on the service signal.

[0029] The peaking module includes:

[0030] An MCU for generating a peaking signal and adjusting the frequency of the peaking signal;

[0031] A step-down resistor sub-module for reducing the waveform amplitude of the peaking signal to obtain a square-wave peaking signal;

[0032] The step-down resistor sub-module includes resistor R1, resistor R2, and digital potentiometer R3;

[0033] One end of the resistor R1 is connected to the output pin of the MCU; the other end of the resistor R1 is respectively connected to one end of the resistor R2 and the H end of the digital potentiometer R3; the other end of the resistor R2 is respectively connected to the L end of the digital potentiometer R3 and the filter circuit sub-module; the W end of the digital potentiometer R3 is connected to the filter circuit sub-module.

[0034] In this solution, by controlling the position of the W end of the digital potentiometer R3, the peak-to-peak value of the output voltage of the peaking signal can be changed, thereby controlling the peaking depth.

[0035] A filter circuit sub-module for converting the square-wave peaking signal into a sine-wave peaking signal and driving the electro-absorption modulator EAM of the electro-absorption modulated laser;

[0036] The filter circuit sub-module includes capacitor C1, resistor R4, resistor R5, resistor R6, resistor R7, capacitor C2, capacitor C3, capacitor C4, and an operational amplifier;

[0037] One end of the capacitor C1 is connected to the W end of the digital potentiometer R3; the other end of the capacitor C1 is respectively connected to one end of the resistor R4, one end of the resistor R5, and one end of the resistor R6; the other end of the resistor R4 is externally connected to a 3.3V voltage; the other end of the resistor R6 is respectively connected to one end of the resistor R7 and one end of the capacitor C3; the other end of the resistor R7 is respectively connected to one end of the capacitor C2 and the non-inverting input terminal of the operational amplifier; the other end of the resistor R5 is respectively connected to the other end of the resistor R2 and the other end of the capacitor C2 and is grounded; the other end of the capacitor C3 is respectively connected to the inverting input terminal, the output terminal of the operational amplifier, and one end of the capacitor C4; the other end of the capacitor C4 is connected to the electro-absorption modulated laser.

[0038] An electro-absorption modulated laser is used to transmit a service signal and a sine wave peak-clipping signal through an electro-absorption modulator (EAM).

[0039] The electro-absorption modulated laser includes an electro-absorption modulator (EAM) and a distributed feedback laser (DFB).

[0040] The input end of the distributed feedback laser (DFB) is externally connected to a current Ibias; the input end of the electro-absorption modulator (EAM) is connected to the other end of a capacitor C4 and is externally connected to a power supply EABIAS; the output end of the electro-absorption modulator (EAM) is connected to the output end of the distributed feedback laser (DFB) and is grounded.

[0041] In this solution, the Ibias current provides the working current for the distributed feedback laser (DFB) in the electro-absorption modulated laser, and the other end of the capacitor C4 drives the electro-absorption modulator (EAM) in the electro-absorption modulated laser to transmit the service signal and the peak-clipping signal.

[0042] In this solution, by using the power supply pins of the MCU, such as the IO port, DAC port, PWM port, and SPI port, modulation signals with programmable arbitrary frequencies and peak-clipping depths can be output. The modulation information to be sent can be transmitted through the direct memory access method, enabling high-speed transmission and sending of modulation data. When the MCU outputs two different signals, PWM and SPI, a signal with an adjustable amplitude and the same frequency can be obtained at the W terminal of the digital potentiometer R3. The capacitor C4 can obtain a sine wave signal with the same frequency and amplitude as the signal output from the W terminal of the digital potentiometer R3.

[0043] The peak-clipping circuit of a single-wavelength 200G electro-absorption modulated laser optical module provided by the present invention is different from the peak-clipping circuit of a directly modulated laser. The electro-absorption modulated laser can directly control the electro-absorption modulator (EAM) through a voltage signal to transmit the peak-clipping signal. At this time, the laser operates in a stable state, avoiding the influence on the peak-clipping function caused by the change of the threshold current due to reasons such as laser aging when the voltage signal is converted into a current signal in the directly modulated laser.

[0044] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered within the protection scope of the present invention.

Claims

1. A top modulation circuit for a single-wavelength 200G electro-absorption modulated laser optical module, characterized in that: include: Business module, used for transmitting business signals; The top modulation module is used to transmit the top modulation signal superimposed on the service signal.

2. The top modulation circuit of the single-wavelength 200G electro-absorption modulated laser optical module according to claim 1 is characterized in that: The top adjustment module comprises: MCU, used for generating a top modulation signal and adjusting the frequency of the top modulation signal; The voltage-dropping resistor submodule is used to reduce the waveform amplitude of the top-adjusting signal to obtain a square wave top-adjusting signal; The filter circuit submodule is used to convert the square wave top modulation signal into a sine wave top modulation signal and drive the electro-absorption modulator EAM of the electro-absorption modulated laser; The electro-absorption modulated laser is used to transmit business signals and sinusoidal modulation signals through an electro-absorption modulator EAM.

3. The top modulation circuit of the single-wavelength 200G electro-absorption modulated laser optical module according to claim 2 is characterized in that: The step-down resistor submodule includes a resistor R1, a resistor R2 and a digital potentiometer R3; One end of the resistor R1 is connected to the output pin of the MCU; the other end of the resistor R1 is connected to one end of the resistor R2 and the H end of the digital potentiometer R3 respectively; the other end of the resistor R2 is connected to the L end of the digital potentiometer R3 and the filter circuit submodule respectively; the W end of the digital potentiometer R3 is connected to the filter circuit submodule.

4. The top modulation circuit of the single-wavelength 200G electro-absorption modulated laser optical module according to claim 3 is characterized in that: The filter circuit submodule includes a capacitor C1, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C2, a capacitor C3, a capacitor C4 and an operational amplifier; One end of the capacitor C1 is connected to the W end of the digital potentiometer R3; the other end of the capacitor C1 is respectively connected to one end of the resistor R4, one end of the resistor R5 and one end of the resistor R6; the other end of the resistor R4 is externally connected to a 3.3V voltage; the other end of the resistor R6 is respectively connected to one end of the resistor R7 and one end of the capacitor C3; the other end of the resistor R7 is respectively connected to one end of the capacitor C2 and the same-direction input end of the operational amplifier; the other end of the resistor R5 is respectively connected to the other end of the resistor R2 and the other end of the capacitor C2, and is grounded; the other end of the capacitor C3 is respectively connected to the reverse input end, the output end and one end of the capacitor C4 of the operational amplifier; the other end of the capacitor C4 is connected to the electro-absorption modulated laser.

5. The top modulation circuit of the single-wavelength 200G electro-absorption modulated laser optical module according to claim 4, characterized in that: The electro-absorption modulated laser comprises an electro-absorption modulator EAM and a distributed feedback laser DFB; The input end of the distributed feedback laser DFB is externally connected to the current Ibias; the input end of the electroabsorption modulator EAM is connected to the other end of the capacitor C4 and is externally connected to the power supply EABIAS; the output end of the electroabsorption modulator EAM is connected to the output end of the distributed feedback laser DFB and is grounded.

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