Chip surface film plating device and use method thereof

Abstract

The invention discloses a chip surface thin film plating device and a use method thereof, and belongs to the technical field of chip plating, the chip surface thin film plating device comprises a deposition chamber, a placement frame is fixedly connected in the deposition chamber, a rotary table is rotatably connected to the placement frame, a plurality of through holes are formed in the rotary table, chips are placed in the through holes, and a driving assembly is arranged on the placement frame; the driving assembly drives the turntable to rotate so as to drive the chip to turn over and change the deposition direction and the deposition angle of the deposition surface of the chip; and the evaporation cracking chamber is used for placing a plating material and enabling the evaporated and cracked plating material to enter the deposition chamber. A plurality of chips can be driven to rotate synchronously, the deposition direction and the deposition angle of the deposition surface of each chip are changed, uniform distribution of coating films on the two surfaces of each chip is ensured, the situation that local parts are too thick or too thin is avoided, and the coating film quality is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of chip coating, and particularly relates to a device for coating a film on the surface of a chip and a method for using the same. Background Art

[0002] A chip is a solid-state semiconductor device. To prevent acid-base corrosion and oxidation in the external environment, a film is usually coated on the surface of the chip to avoid chip aging caused by external corrosion and oxidation.

[0003] In the prior art, multiple groups of chips are usually stacked and placed in a deposition chamber, and a transparent parylene film is deposited and coated on the surface of the chips to achieve the effects of waterproofing and moisture-proofing. However, the coating thickness and coating quality on the bottom surface of the chips are lower than those on the top surface of the chips by this method, resulting in uneven coating effects and reducing the protection effect on the chips.

[0004] Therefore, a device for coating a film on the surface of a chip and a method for using the same are proposed. Summary of the Invention

[0005] The purpose of the present invention is to provide a device for coating a film on the surface of a chip and a method for using the same, aiming to solve or improve at least one of the above technical problems.

[0006] To achieve the above purpose, the present invention provides the following solution: The present invention provides a device for coating a film on the surface of a chip, including:

[0007] A deposition chamber, in which a placement rack is fixedly connected. A turntable is rotatably connected to the placement rack. A plurality of through holes are formed in the turntable, and chips are placed in the through holes. A driving component is arranged on the placement rack, and the driving component drives the turntable to rotate, thereby driving the chips to flip, changing the deposition direction and deposition angle of the deposition surface of the chips.

[0008] An evaporation and cracking chamber, in which coating materials are placed, and the evaporated and cracked coating materials enter the deposition chamber.

[0009] Optionally, a plurality of the through holes are circumferentially arranged in an array on the circumference of the turntable. A plurality of threaded holes are formed in the side wall of the turntable, and the plurality of threaded holes are arranged in one-to-one correspondence with and communicated with the plurality of through holes. Bolts are threadedly connected in the threaded holes.

[0010] Optionally, the driving component includes a protective shell fixedly connected to one side of the placement rack. A first motor is fixedly connected in the protective shell. A first bevel gear is fixedly connected to the output shaft of the first motor. Rotating shafts are respectively fixedly connected to both sides of the turntable, and the rotating shafts are rotatably connected to the placement rack. Any one of the rotating shafts extends into the protective shell and is fixedly connected to a second bevel gear, and the second bevel gear meshes with the first bevel gear.

[0011] Optionally, the evaporation cracking chamber includes an evaporation chamber and a cracking chamber. The top of the evaporation chamber is fixedly connected and communicated with the side wall of the cracking chamber. One side of the cracking chamber away from the evaporation chamber is fixedly connected and communicated with the deposition chamber. An electron beam evaporator is installed at the bottom of the inner cavity of the evaporation chamber, and a heating device is arranged outside the cracking chamber.

[0012] Optionally, the cracking chamber is a horizontally arranged tubular structure with a polygonal line-like bend. A catalyst is placed in the cracking chamber, and the catalyst is located at the bottom of the polygonal line in the cracking chamber.

[0013] Optionally, one end of the deposition chamber away from the cracking chamber is communicated with a filtration chamber. A filter element is installed in the filtration chamber. One end of the filtration chamber away from the deposition chamber is communicated with an induced draft fan, and the filter element is located between the deposition chamber and the induced draft fan.

[0014] Optionally, the bottom of the deposition chamber is connected to a vacuum pump through a vacuum pump connecting pipe, and the bottom of the deposition chamber is communicated with a nitrogen gas access pipe.

[0015] There is also provided a method for using a chip surface film plating device, including the following steps:

[0016] Step 1: Pretreat the surface of the chip to obtain a clean and dry chip;

[0017] Step 2: Install several chips in several through holes on the turntable in the deposition chamber in sequence; place the plating material in the evaporation cracking chamber;

[0018] Step 3: Perform a vacuum pumping treatment on the deposition chamber and the evaporation cracking chamber, and introduce nitrogen gas to displace the air;

[0019] Step 4: Evaporate and crack the plating material in the evaporation cracking chamber, and enter the deposition chamber in the form of active monomers;

[0020] Step 5: The driving component drives the turntable to rotate, thereby driving the chip to flip and performing a comprehensive deposition and coating treatment on the chip.

[0021] Optionally, in step 1, the chip is ultrasonically cleaned by an ultrasonic cleaner, and after the cleaning is completed, the chip is placed in a vacuum dryer for drying treatment.

[0022] Optionally, in step 1, the ultrasonic cleaner is provided with anhydrous ethanol and the cleaning time is 10 - 20 minutes; the working temperature of the vacuum dryer is 90 °C and the drying time is 5 - 10 minutes.

[0023] The present invention discloses the following technical effects: The chip is placed in the through hole, so that the driving component drives the turntable to rotate, thereby driving a plurality of chips to rotate synchronously, changing the deposition direction and deposition angle of the chip deposition surface, ensuring uniform distribution of the coating on both sides of the chip, avoiding the situation of local over-thickness or under-thickness, and ensuring the coating quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The drawings constituting a part of this application are used to provide a further understanding of this application. The schematic embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation to this application. In the drawings:

[0025] Figure 1 is a schematic structural diagram of the present invention;

[0026] Figure 2 is a schematic structural diagram of the turntable and the driving component in Embodiment 1 of the present invention;

[0027] Figure 3 is a schematic structural diagram of the turntable and the baffle in Embodiment 2 of the present invention;

[0028] Figure 4 is an exploded view of the turntable and the baffle in Embodiment 2 of the present invention.

[0029] 1. Evaporation chamber; 11. Stainless steel container; 12. Electron beam evaporator;

[0030] 2. Pyrolysis chamber; 21. Catalyst; 22. Heating device;

[0031] 3. Deposition chamber; 31. Cover; 32. Vacuum pump connecting pipe; 33. Vacuum pump; 34. Nitrogen access pipe; 35. Placing rack; 350. Second bevel gear; 351. Bolt; 352. Electric push rod; 353. Rotating shaft; 354. Turntable; 355. Through hole; 356. Bracket; 357. Protective shell; 358. First motor; 359. First bevel gear; 360. Second motor; 361. Cover; 362. Baffle;

[0032] 4. Filtration chamber; 41. Filter element; 42. Induced draft fan;

[0033] 5. Solenoid valve. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0035] To make the above objects, features, and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0036] Embodiment 1

[0037] Referring to Figure 1 - Figure 2 , the present invention provides a thin film coating device for the surface of a chip, including:

[0038] A deposition chamber 3, in which a placement rack 35 is fixedly connected. A turntable 354 is rotatably connected to the placement rack 35. A plurality of through holes 355 are formed in the turntable 354, and chips are placed in the through holes 355. A driving component is arranged on the placement rack 35, and the driving component drives the turntable 354 to rotate so as to drive the chips to flip.

[0039] An evaporation and cracking chamber, in which coating materials are placed, and the evaporated and cracked coating materials enter the deposition chamber 3.

[0040] In some alternative embodiments, a plurality of through holes 355 are circumferentially arranged in an array on the circumference of the turntable 354. A plurality of threaded holes are formed in the side wall of the turntable 354. The plurality of threaded holes are arranged in one-to-one correspondence with and communicate with the plurality of through holes 355. Bolts 351 are threadedly connected in the threaded holes.

[0041] Place the chip in the through hole 355, turn the bolt 351 to fix the chip in the through hole 355. The plurality of through holes 355 are circumferentially arranged in an array to ensure that the distance between the chips is consistent, so as to avoid mutual interference during the coating process and ensure the uniformity of the coating; the two sides of the chip are respectively parallel to the surface of the turntable 354, which is convenient for uniform coating of the chip.

[0042] In some alternative embodiments, the driving component includes a protective shell 357 fixedly connected to one side of the placement rack 35. A first motor 358 is fixedly connected inside the protective shell 357. A first bevel gear 359 is fixedly connected to the output shaft of the first motor 358. Rotating shafts 353 are respectively fixedly connected to both sides of the turntable 354. The rotating shafts 353 are rotatably connected to the placement rack 35. Any one of the rotating shafts 353 extends into the protective shell 357 and is fixedly connected to a second bevel gear 350. The second bevel gear 350 meshes with the first bevel gear 359.

[0043] The first motor 358 drives the first bevel gear 359 to rotate, and then drives the second bevel gear 350 to rotate, thereby realizing the rotation of the turntable 354, changing the deposition direction and deposition angle of the deposition surface of the chip, and ensuring the uniform distribution of the coating on both sides of the chip.

[0044] In some alternative embodiments, the evaporation cracking chamber includes an evaporation chamber 1 and a cracking chamber 2. The top of the evaporation chamber 1 is fixedly connected to and communicates with the side wall of the cracking chamber 2. The side of the cracking chamber 2 away from the evaporation chamber 1 is fixedly connected to and communicates with a deposition chamber 3. An electron beam evaporator 12 is installed at the bottom of the inner cavity of the evaporation chamber 1, and a heating device 22 is provided outside the cracking chamber 2.

[0045] Above the electron beam evaporator 12, a stainless steel container 11 is installed. Placing the plating material on the stainless steel container 11 ensures the stability and easy control of the plating material. The electron beam evaporator 12 is used in a vacuum environment to heat the evaporator material using a focused electron beam. The process of the electron beam evaporator 12 is based on a tungsten wire evaporator. A high-voltage current is used to heat the tungsten wire to a high temperature, thereby causing thermionic emission of electrons. When the electron beam hits the target material, its kinetic energy is converted into heat, releasing high thermal energy in the form of gas phase. The evaporated material is dispersed in the high-vacuum environment in a gaseous state.

[0046] After the plating material evaporates, it is dispersed in a gaseous state and sent into the cracking chamber 2. After being heated and cracked, it enters the deposition chamber 3 in the form of active monomers.

[0047] In some alternative embodiments, the cracking chamber 2 is a horizontally arranged tubular structure with a quasi-folded bend. A catalyst 21 is placed inside the cracking chamber 2, and the catalyst 21 is located at the bottom of the middle fold line of the cracking chamber 2.

[0048] The tubular structure of the cracking chamber 2 can ensure the uniform distribution and sufficient cracking of the plating material vapor. The catalyst 21 placed inside the cracking chamber 2 can accelerate the cracking process of the plating material vapor and improve the cracking efficiency. The heating device 22 outside the cracking chamber 2 can ensure that the temperature inside the cracking chamber 2 reaches the temperature range required for cracking. The plating material vapor finally enters the deposition chamber 3 in the form of active monomers through the cracking reaction under high temperature and high pressure.

[0049] In some alternative embodiments, one end of the deposition chamber 3 away from the cracking chamber 2 is connected to a filtration chamber 4. A filter element 41 is installed inside the filtration chamber 4. One end of the filtration chamber 4 away from the deposition chamber 3 is connected to an induced draft fan 42, and the filter element 41 is located between the deposition chamber 3 and the induced draft fan 42.

[0050] The filter element 41 is arranged in a detachable installation structure. Using the induced draft fan 42 for air flow traction can accelerate the discharge of residual gas and improve the filtration efficiency. The detachable installation structure of the filter element 41 facilitates the replacement and maintenance of the filter element 41.

[0051] In some alternative embodiments, the bottom of the deposition chamber 3 is connected to a vacuum pump 33 through a vacuum pump connection pipe 32, and a nitrogen gas access pipe 34 is connected to the bottom of the deposition chamber 3.

[0052] A cover 31 is installed on the top of the deposition chamber 3, which facilitates the loading and unloading of the chips. At the same time, it ensures the sealing during the coating process, preventing external air from entering and affecting the coating quality. By connecting the vacuum pump 33 through the vacuum pump connecting pipe 32, the evacuation of the deposition chamber 3 can be achieved. The nitrogen gas inlet pipe 34 is used to introduce nitrogen gas into the deposition chamber 3 for air replacement to ensure the purity of the coating environment.

[0053] In this embodiment, the evaporation chamber 1, the cracking chamber 2, the deposition chamber 3 and the filtration chamber 4 are sequentially connected through pipelines, and solenoid valves 5 are installed in each pipeline, which can realize the independent control and adjustment of each chamber, ensuring the stability and controllability of the coating process.

[0054] In this embodiment, an electric push rod 352 is fixedly connected to the placement rack 35, and a bracket 356 is fixedly connected to the output end of the electric push rod 352. The electric push rod 352 realizes the lifting of the bracket 356 to further fix the turntable.

[0055] A method for using a chip surface film coating device is also provided, including the following steps:

[0056] Step 1: Pretreat the surface of the chip to obtain a clean and dry chip;

[0057] Step 2: Install several chips in several through holes 355 on the turntable 354 in the deposition chamber 3 in sequence; place the coating material in the evaporation cracking chamber;

[0058] Step 3: Evacuate the deposition chamber 3 and the evaporation cracking chamber, and introduce nitrogen gas to replace the air;

[0059] Step 4: Evaporate and crack the coating material in the evaporation cracking chamber, and enter the deposition chamber 3 in the form of active monomers;

[0060] Step 5: The driving component drives the turntable 354 to rotate, thereby driving the chip to flip and performing a comprehensive deposition coating treatment on the chip.

[0061] In some alternative embodiments, in Step 1, the chip is ultrasonically cleaned using an ultrasonic cleaner, and after cleaning, the chip is placed in a vacuum dryer for drying treatment.

[0062] In some alternative embodiments, in Step 1, the ultrasonic cleaner is provided with anhydrous ethanol and the cleaning time is 10 - 20 minutes; the working temperature of the vacuum dryer is 90 °C and the drying time is 5 - 10 minutes.

[0063] The specific operation steps are as follows:

[0064] Step 1: Pretreatment of the chip surface: Use an ultrasonic cleaner to ultrasonically clean the chip. After cleaning, place the chip in a vacuum dryer for drying. In this step, ultrasonic cleaning is used to remove dirt and impurities on the chip surface, and then vacuum drying is used to remove moisture, providing a clean and dry surface for the subsequent coating process. Add an appropriate amount of surfactant to the cleaning solution to enhance the cleaning effect. At the same time, monitor the vacuum degree and temperature during the drying process to ensure complete removal of moisture.

[0065] Step 2: Feeding of the chip and coating material: Install multiple groups of chips in the placement rack 35 in the deposition chamber 3 in an array, and place the coating material in the stainless steel container 11 in the evaporation chamber 1. In this step, when placing the chips, arrange them in an array to ensure consistent spacing between the chips, avoiding mutual interference during the coating process and ensuring the uniformity of the coating. Placing the coating material in the stainless steel container 11 ensures the stability and easy control of the coating material.

[0066] Step 3: Vacuum pumping treatment: Perform vacuum pumping treatment on the deposition chamber 3 and the evaporation chamber 1, and introduce nitrogen to displace the air. In this step, vacuum pumping treatment can remove the air in the deposition chamber 3 and the evaporation chamber 1, avoiding the influence of oxygen, water vapor, etc. on the coating process. Introducing nitrogen for displacement can further ensure the purity of the coating environment.

[0067] Step 4: Evaporation and cracking of the coating material: Evaporate the coating material in the evaporation chamber 1 and send it into the cracking chamber 2 in a gaseous dispersion state. After heating and cracking, it enters the deposition chamber 3 in the form of active monomers. In this step, after the coating material evaporates in the evaporation chamber 1, it is heated and cracked into active monomers in the cracking chamber 2, and then enters the deposition chamber 3 for coating.

[0068] Step 5: Reciprocating flipping of the chip: Use the placement rack 35 to drive the chip to flip and perform comprehensive deposition coating treatment on the chip. In this step, driving the chip to flip can ensure the uniform distribution of the coating on the chip surface, avoiding the situation of local over-thickness or under-thickness.

[0069] Step 6: Exhaust filtration and unloading: After coating is completed, introduce the residual gas into the filtration chamber 4, filter the residual gas with the filter element 41 and then discharge it, and take out the chips in the deposition chamber 3. In this step, after coating is completed, introducing the residual gas into the filtration chamber 4 for filtration can ensure the safety and cleanliness of the working environment. After taking out the chips, the entire coating process is completed.

[0070] More specifically, in Step 1, absolute ethanol is provided in the ultrasonic cleaner and the cleaning time is 10 minutes. Absolute ethanol is used as the cleaning solution, which has good decontamination ability and volatility, and can quickly and effectively remove dirt and grease on the chip surface. A 10-minute cleaning time can ensure the thorough cleaning of the chip surface. In actual operation, the specific time can be adjusted according to the pollution degree of the chip surface and the concentration of the cleaning solution.

[0071] More specifically, the working temperature of the vacuum dryer is 90 °C and the drying time is 5 minutes. The drying temperature of 90 °C can accelerate the evaporation of moisture while avoiding thermal damage to the chip caused by excessive temperature. The drying time of 5 minutes can ensure the complete drying of the chip surface. Similarly, in actual operation, adjustments are made according to the actual situation.

[0072] Example 2

[0073] Refer to Figure 3 - Figure 4 , which is different from Example 1 in that second motors 360 are fixedly connected to both surfaces of the turntable 354. A cover 361 is fixedly connected to the output shaft of the second motor 360. The cover 361 covers the second motor 360 and is in sliding contact with the surface of the turntable 354. A plurality of baffles 362 are fixedly connected to the circumferential side wall of the cover 361. The plurality of baffles 362 are arranged in one-to-one correspondence with the plurality of through holes 355. The size of the baffle 362 is not less than the size of the through hole 355.

[0074] When the turntable 354 is in the horizontal position, that is, when the chip is horizontally placed for film deposition, at this time, the baffle 362 on the top surface of the turntable 354 does not block the through hole 355, while the baffle 362 on the bottom surface of the turntable 354 blocks below the through hole 355. At this time, the chip is directly placed in the through hole 355 and on the baffle 362 below the through hole 355, and there is no need to use the bolt 351 for fixing;

[0075] After the deposition on the top surface is completed, the baffle 362 on the top surface of the turntable 354 is also synchronously blocked above the through hole 355. The turntable 354 is driven by the first motor 358 to flip 180°. At this time, the chip is turned over, and then the baffle 362 at the top at this time is moved away to open the through hole 355 for the deposition of the other side of the chip.

[0076] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0077] The above-described embodiments are only descriptions of the preferred embodiments of the present invention, and do not limit the scope of the present invention. Without departing from the design spirit of the present invention, various deformations and improvements made by those of ordinary skill in the art to the technical solutions of the present invention should all fall within the protection scope determined by the claims of the present invention.

Claims

1. A device for coating a thin film on a chip surface, characterized in that: include: A deposition chamber (3), wherein a placement rack (35) is fixedly connected in the deposition chamber (3), a turntable (354) is rotatably connected to the placement rack (35), a plurality of through holes (355) are provided on the turntable (354), and the through holes (355) are used to place chips, and a driving component is provided on the placement rack (35), and the driving component drives the turntable (354) to rotate, thereby driving the chips to flip; An evaporation and cracking chamber is used to place the plated material, and allows the plated material after evaporation and cracking to enter the deposition chamber (3).

2. The device for coating a thin film on a chip surface according to claim 1, characterized in that: A plurality of through holes (355) are arranged in an array in a circumferential direction around the turntable (354), a plurality of threaded holes are arranged on the side wall of the turntable (354), the plurality of threaded holes are arranged in a one-to-one correspondence with and connected to the plurality of through holes (355), and bolts (351) are threadedly connected in the threaded holes.

3. The device for coating a thin film on a chip surface according to claim 1, characterized in that: The driving assembly comprises a protective shell (357) fixedly connected to one side of the placement rack (35), a first motor (358) being fixedly connected inside the protective shell (357), a first bevel gear (359) being fixedly connected to the output shaft of the first motor (358), rotating shafts (353) being fixedly connected to both sides of the turntable (354), the rotating shafts (353) being rotationally connected to the placement rack (35), any of the rotating shafts (353) extending into the protective shell (357) and being fixedly connected to a second bevel gear (350), the second bevel gear (350) being meshed with the first bevel gear (359).

4. The device for coating a thin film on a chip surface according to claim 1, characterized in that: The evaporation and cracking chamber comprises an evaporation chamber (1) and a cracking chamber (2); the top of the evaporation chamber (1) is fixedly connected to and communicated with the side wall of the cracking chamber (2); the side of the cracking chamber (2) away from the evaporation chamber (1) is fixedly connected to and communicated with the deposition chamber (3); an electron beam evaporator (12) is installed at the bottom of the inner cavity of the evaporation chamber (1); and a heating device (22) is provided on the outside of the cracking chamber (2).

5. The device for coating a thin film on a chip surface according to claim 4, characterized in that: The cracking chamber (2) is a horizontally arranged tubular structure with a fold line-like bend. A catalyst (21) is placed in the cracking chamber (2), and the catalyst (21) is located at the bottom of the fold line in the cracking chamber (2).

6. The device for coating a thin film on a chip surface according to claim 4, characterized in that: The end of the sedimentation chamber (3) away from the cracking chamber (2) is connected to a filter chamber (4), a filter element (41) is installed in the filter chamber (4), and the end of the filter chamber (4) away from the sedimentation chamber (3) is connected to an induced draft fan (42), and the filter element (41) is located between the sedimentation chamber (3) and the induced draft fan (42).

7. The device for coating a thin film on a chip surface according to claim 1, characterized in that: The bottom of the deposition chamber (3) is connected to a vacuum pump (33) via a vacuum pump connecting pipe (32), and the bottom of the deposition chamber (3) is connected to a nitrogen inlet pipe (34).

8. A method for using a device for coating a thin film on a chip surface, according to any one of claims 1 to 7, characterized in that: The following steps are involved: Step 1: Pre-treat the chip surface to obtain a clean and dry chip; Step 2: sequentially mounting a plurality of chips in a plurality of through holes (355) on a rotating disk (354) in a deposition chamber (3); placing a plated material in an evaporation cracking chamber; Step 3: vacuum the deposition chamber (3) and the evaporation and cracking chamber, and introduce nitrogen to replace the air; Step 4: causing the plated material in the evaporation and cracking chamber to evaporate and crack, and enter the deposition chamber (3) in the form of active monomers; Step 5: The driving assembly drives the turntable (354) to rotate, thereby causing the chip to flip, and performing a full deposition coating process on the chip.

9. The method for using the device for coating a thin film on a chip surface according to claim 8, characterized in that: In step one, the chip is ultrasonically cleaned using an ultrasonic cleaning machine, and after cleaning, the chip is placed in a vacuum dryer for drying.

10. The method for using the device for coating a thin film on a chip surface according to claim 9, characterized in that: In step 1, anhydrous ethanol is provided in the ultrasonic cleaning machine and the cleaning time is 10-20 minutes; the working temperature of the vacuum dryer is 90° C. and the drying time is 5-10 minutes.

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