Member for semiconductor manufacturing apparatus

Abstract

A member (10) for a semiconductor manufacturing apparatus is provided with: a ceramic plate (20); a composite plate 30 joined to the lower surface of the ceramic plate 20; a cooling plate 50 provided on the lower surface of the composite plate 30; a first fastener (60) that fastens the composite plate (30) and the cooling plate (50); a support plate 70 that supports the lower surface of the cooling plate 50; and a second fastener 80 that fastens the cooling plate 50 and the support plate 70. The member (10) for a semiconductor manufacturing apparatus is configured such that when a ceramic plate (20) changes from normal temperature to high temperature, a laminated body (first laminated body L1) of the ceramic plate (20) and a composite plate is deformed so that the center thereof is convex, and a laminated body (second laminated body L2) of a cooling plate (50) and a support plate (70) fastened by a first fastener (60) is also deformed so that the center thereof is convex.

Description

Technical Field The present invention relates to a component for a semiconductor manufacturing apparatus. Background Art Conventionally, an electrostatic chuck assembly has been known. For example, Patent Document 1 describes an electrostatic chuck assembly including: an encapsulation part obtained by bonding an upper encapsulation plate and a lower encapsulation plate; a cooling plate provided on the lower surface of the lower encapsulation plate; and a fastener for fastening the lower encapsulation plate and the cooling plate. The electrostatic chuck assembly is mounted on a mounting plate. Examples of the upper encapsulation plate include a ceramic plate, examples of the lower encapsulation plate include a plate of a conductive metal matrix composite (MMC), that is, a composite plate, and examples of the cooling plate include a metal plate. In addition, it is described that the MMC material for the lower encapsulation plate is selected so as to be substantially consistent with the coefficient of thermal expansion (CTE) of the upper encapsulation plate over the entire operating temperature range. Further, it is described that the CTE of the cooling plate is made consistent with the CTE of the encapsulation part. Prior Art Documents Patent Documents Patent Document 1: Japanese Unexamined Patent Application Publication No. 2022-119820 Summary of the Invention However, in Patent Document 1, when the upper encapsulation plate changes from room temperature to a high temperature (for example, 180 to 220°C), the laminate of the upper encapsulation plate and the lower encapsulation plate, that is, the encapsulation part, is deformed into a convex shape at the center, and the center of the cooling plate mounted on the mounting plate is recessed. In this case, the lower encapsulation plate is pulled downward by the fastener, which may cause the lower encapsulation plate to break. The present invention has been made to solve the above problems, and a main object thereof is to prevent the composite plate from breaking.

[0001] The component for a semiconductor manufacturing apparatus of the present invention includes: a ceramic plate formed of a ceramic material and having a wafer placement part on the upper surface; a composite plate formed of a composite material and joined to the lower surface of the ceramic plate; a cooling plate formed of a metal material and provided on the lower surface of the composite plate, having a refrigerant flow path; a first fastener for fastening the composite plate and the cooling plate; a support plate formed of an insulating material for supporting the lower surface of the cooling plate; and a second fastener for fastening the cooling plate and the support plate, when the ceramic plate changes from room temperature to a high temperature, the laminate of the ceramic plate and the composite plate is deformed into a convex shape at the center, and the laminate of the cooling plate and the support plate fastened by the first fastener is also deformed into a convex shape at the center. In the component for a semiconductor manufacturing apparatus, when the ceramic plate changes from room temperature to a high temperature, the laminate of the ceramic plate and the composite plate deforms such that the center is convex (i.e., the center bulges). In addition, the laminate of the cooling plate and the support plate fastened by the first fastener also deforms such that the center is convex. Therefore, it is possible to suppress the composite plate from being pulled downward by the fastener, and thus it is possible to prevent the composite plate from being damaged. It should be noted that in this specification, the present invention is sometimes described using up and down, left and right, front and back, etc. However, up and down, left and right, front and back are merely relative positional relationships. Therefore, when the orientation of the component for a semiconductor manufacturing apparatus is changed, up and down may sometimes become left and right or left and right may become up and down. However, such cases are also included in the technical scope of the present invention.

[0002] In the above-mentioned component for a semiconductor manufacturing apparatus (the component for a semiconductor manufacturing apparatus described in [1] above), the coefficient of thermal expansion (CTE) of the composite plate may be substantially the same as the CTE of the ceramic plate, and the CTE of the cooling plate may be less than the CTE of the support plate. Accordingly, when the ceramic plate changes from room temperature to a high temperature, the laminate of the ceramic plate and the composite plate deforms such that the center is convex, and the laminate of the cooling plate and the support plate fastened by the first fastener also deforms such that the center is convex. It should be noted that in this specification, the CTE is set to a value between 20 and 200 °C.

[0003] In the above-mentioned component for a semiconductor manufacturing apparatus (the component for a semiconductor manufacturing apparatus described in [1] or [2] above), the absolute value of the difference between the CTE of the composite plate and the CTE of the ceramic plate may be 1×10 -6 / K or less, and the CTE of the cooling plate may be less than the CTE of the support plate in a range of 1×10 -6 / K or more and 3×10 -6 / K or less.

[0004] In the above-mentioned component for a semiconductor manufacturing apparatus (the component for a semiconductor manufacturing apparatus described in any one of [1] to [3] above), a plurality of the second fasteners may be respectively provided along two or more concentric circles having different diameters. In this case, the lower surface of the cooling plate is strongly constrained by the support plate. Therefore, the deformation of one of the support plate and the cooling plate has a great influence on the other.

[0005] In the above-mentioned component for a semiconductor manufacturing apparatus (the component for a semiconductor manufacturing apparatus described in any one of [1] to [4] above), the ceramic material may be alumina, the composite material may be SiSiCTi, the metal material may be molybdenum, and the insulating material may be alumina. If such a material combination is selected, it is easy to obtain the effects of the present invention.

[0006] In the above-described component for a semiconductor manufacturing apparatus (the component for a semiconductor manufacturing apparatus described in any one of the above [1] to [5]), the first fastener may be made of titanium. Accordingly, it is possible to reduce the stress generated at the portion fastened by the first fastener in the composite plate. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a longitudinal sectional view of the component 10 for a semiconductor manufacturing apparatus. Figure 2 is a top view of the component 10 for a semiconductor manufacturing apparatus. Figure 3 is a bottom view of the component 10 for a semiconductor manufacturing apparatus. Figure 4 is a schematic view showing the appearance of the component 10 for a semiconductor manufacturing apparatus when the ceramic plate 20 changes from normal temperature to high temperature. Figure 5 is a schematic view showing the appearance of the component 110 for a semiconductor manufacturing apparatus when the ceramic plate 20 changes from normal temperature to high temperature. DETAILED DESCRIPTION OF THE INVENTION Next, preferred embodiments of the present invention will be described with reference to the drawings. Figure 1 is a longitudinal sectional view of the component 10 for a semiconductor manufacturing apparatus (a sectional view when the component 10 for a semiconductor manufacturing apparatus is cut along a plane including the central axis of the ceramic plate 20), Figure 2 is a top view of the component 10 for a semiconductor manufacturing apparatus, Figure 3 is a bottom view of the component 10 for a semiconductor manufacturing apparatus. The component 10 for a semiconductor manufacturing apparatus is a component used for performing CVD, etching, etc. on a wafer W using plasma. The component 10 for a semiconductor manufacturing apparatus includes: a ceramic plate 20, a composite plate 30, a cooling plate 50, a first fastener 60, a support plate 70, and a second fastener 80. The ceramic plate 20 is a circular plate component formed of a ceramic material represented by alumina, aluminum nitride, etc., and has a wafer placement portion 22 on its upper surface. A wafer W is placed on the wafer placement portion 22. As Figure 2 shown, a sealing band 22a is formed along the outer edge of the wafer placement portion 22, and a plurality of circular small protrusions 22b are formed on the entire surface of the region surrounded by the sealing band 22a. The sealing band 22a and the circular small protrusions 22b have the same height, and the height is, for example, several μm to several tens of μm. It should be noted that the portion of the wafer placement portion 22 where the sealing band 22a and the circular small protrusions 22b are not provided is referred to as a reference surface 22c. The electrostatic electrode 23 is a planar mesh electrode implanted in a region corresponding to substantially the entire upper surface of the ceramic plate 20, and a DC voltage can be applied thereto. When a DC voltage is applied to the electrostatic electrode 23, the wafer W is adsorbed and fixed to the wafer placement portion 22 (specifically, the upper surfaces of the sealing tape 22a and the circular protrusion 22b) due to the electrostatic adsorption force; when the application of the DC voltage is released, the adsorption and fixation of the wafer W to the wafer placement portion 22 is released. The heater electrode 24 is a heating wire (resistance heating element) formed in a region corresponding to substantially the entire upper surface of the ceramic plate 20 from one end to the other end in one stroke. When current flows through the heating wire of the heater electrode 24, the heating wire generates heat, and the wafer W is heated. As materials for forming the electrostatic electrode 23 and the heater electrode 24, for example, tungsten, molybdenum, tungsten carbide, molybdenum carbide, and mixtures thereof with ceramic powder can be cited. The composite plate 30 is a circular plate member formed of a composite material of metal and ceramic, and is joined to the lower surface of the ceramic plate 20 by means of a metal bonding layer 40. The CTE of the composite plate 30 is substantially the same as the CTE of the ceramic plate 20. For example, the absolute value of the difference in CTE between the two is preferably 1×10 -6 / K or less, more preferably 0.5×10 -6 / K or less. As the composite material of metal and ceramic, metal matrix composites (MMC), ceramic matrix composites (CMC), etc. can be cited. As specific examples of the above composite materials, materials containing Si, SiC, and Ti, materials obtained by impregnating SiC porous bodies with Al and / or Si, composites of Al 2 O 3 and TiC, etc. can be cited. The material containing Si, SiC, and Ti is called SiSiCTi, the material obtained by impregnating SiC porous bodies with Al is called AlSiC, and the material obtained by impregnating SiC porous bodies with Si is called SiSiC. As the composite material for the composite plate 30, a composite material with a CTE close to the CTE of the ceramic plate 20 is preferred. When the ceramic plate 20 is made of alumina, the composite plate 30 is preferably made of SiSiCTi. This is because the CTE of SiSiCTi can be made substantially the same as the CTE of alumina. A circular plate member made of SiSiCTi can be produced, for example, as follows. First, silicon carbide, metallic Si, and metallic Ti are mixed to produce a powder mixture. Next, the obtained powder mixture is uniaxially press-molded to produce a circular plate-shaped molded body, and the molded body is hot press-sintered in an inert atmosphere to obtain a circular plate member made of SiSiCTi. The metal bonding layer 40 bonds the lower surface of the ceramic plate 20 and the upper surface of the composite plate 30. The metal bonding layer 40 can be a layer formed of, for example, solder or metal brazing material. The metal bonding layer 40 is formed by, for example, TCB (Thermal compression bonding). TCB refers to a well-known method in which a metal bonding agent is sandwiched between two components to be bonded, and the two components are pressure-bonded at a temperature below the solidus temperature of the metal bonding agent. The laminate obtained by bonding the ceramic plate 20 and the composite plate 30 with the metal bonding layer 40 is referred to as the first laminate L1. The cooling plate 50 is a circular plate member formed of a metal material and is mounted on the lower surface of the composite plate 30 with the heat sink 12 interposed therebetween. The cooling plate 50 has a refrigerant flow path 52 through which a refrigerant can circulate. The refrigerant flow path 52 is Figure 2 arranged in a single stroke from one end (inlet) to the other end (outlet) as shown in a plan view over the entire surface of the ceramic plate 20. In the present embodiment, the refrigerant flow path 52 is formed to have a spiral shape in a plan view. The refrigerant is supplied from a refrigerant circulation device (not shown) to one end (inlet) of the refrigerant flow path 52, passes through the refrigerant flow path 52, and is discharged from the other end (outlet) of the refrigerant flow path 52 and returns to the refrigerant circulation device. The refrigerant circulation device can adjust the refrigerant to a desired temperature. The refrigerant is preferably a liquid and preferably has electrical insulation properties. As the electrically insulating liquid, for example, a fluorine-based inert liquid or the like can be cited. The heat sink 12 is sandwiched between the composite plate 30 and the cooling plate 50 and is thus compressed in the vertical direction. Specifically, the heat sink 12 is preferably a sheet material containing carbon and a resin. As the carbon, graphite, carbon fiber, carbon nanotube, etc. can be cited; as the resin, silicone resin, etc. can be cited. When the carbon is graphite, it is preferably arranged such that the plane direction of the graphene constituting the graphite is along the vertical direction; when the carbon is carbon fiber or carbon nanotube, it is preferably arranged such that the axial direction is along the vertical direction. As the material of the heat sink 12, for example, a thermal interface material (TIM) can be used. As a specific example of the heat sink 12, EX20000C9 series, EX20000C4S series (both manufactured by Dexerials Corporation), GraphitePAD, GraphiteTIM (registered trademark) (both manufactured by Panasonic Corporation), etc. can be cited. It should be noted that a sealing ring (O-ring) can be arranged on the outer periphery of the heat sink 12. The first fastener 60 is composed of an external thread portion 62 and an internal thread portion 64. The external thread portion 62 has: a screw foot portion 62a, and a screw head portion 62b having a diameter larger than that of the screw foot portion 62a. The screw foot portion 62a passes through the through-hole 54 of the cooling plate 50 and the round hole 14 of the heat sink 12 in the vertical direction from the lower surface of the self-cooling plate 50 and is screwed into the internal thread portion 64 provided on the lower surface of the composite plate 30. The internal thread portion 64 can be directly provided on the composite plate 30 or can be a threaded insert embedded in the composite plate 30. The screw head portion 62b is received in a recess 54a provided on the lower surface of the cooling plate 50. The recess 54a is a large-diameter opening portion that opens on the lower surface of the cooling plate 50 in the through-hole 54. The through-hole 54 is provided so as to avoid the refrigerant flow path 52 of the cooling plate 50. A plurality of the first fasteners 60 are respectively provided along two or more concentric circles having different diameters. Here, as Figure 3 shown, a plurality of (8, 12) the first fasteners 60 are provided at equal intervals along a large circle C1 among two circles that are concentric with the cooling plate 50 and have different diameters, and a plurality of (6, 8) are provided at equal intervals along a small circle C2. The external thread portion 62 can be formed of a metal such as stainless steel or titanium, and is preferably formed of titanium. The support plate 70 is an annular member formed of an insulating material and supports the lower surface of the cooling plate 50. The support plate 70 is a component that constitutes a chamber for a semiconductor process. A circular hole 72 at the center of the support plate 70 is used for inserting components such as those for supplying power to the electrostatic electrode 23 and the heater electrode 24. As the insulating material, for example, ceramic materials such as alumina and aluminum nitride can be used. The CTE of the cooling plate 50 is smaller than the CTE of the support plate 70. The CTE of the cooling plate 50 is preferably smaller than the CTE of the support plate 70 by 1×10 -6 / K or more and 3×10 -6 / K or less. For example, when the support plate 70 is made of alumina, the cooling plate 50 is preferably made of molybdenum. In addition, the CTE of the cooling plate 50 is preferably close to the CTE of the ceramic plate 20 or the composite plate 30 (for example, the difference in CTE is 3×10 -6 / K or less). The second fastener 80 includes an external threaded portion 82 and an internal threaded portion 84. The external threaded portion 82 has a screw foot portion 82a and a screw head portion 82b with a diameter larger than that of the screw foot portion 82a. The screw foot portion 82a passes through a through hole 74 of the support plate 70 along the vertical direction from the lower surface of the support plate 70 and is screwed into the internal threaded portion 84 provided on the lower surface of the cooling plate 50. The internal threaded portion 84 can be directly provided on the cooling plate 50 or can be a threaded insert embedded in the cooling plate 50. The screw head portion 82b contacts the lower surface of the support plate 70 (the opening edge of the through hole 74). A plurality of second fasteners 80 are respectively provided along two or more concentric circles with different diameters. Here, as Figure 3 shown, a plurality of (8, 12) second fasteners 80 are provided at equal intervals along a large circle C3 among two circles that are concentric with the support plate 70 and have different diameters, and a plurality of (6, 8) second fasteners 80 are provided at equal intervals along a small circle C4. The external threaded portion 82 can be formed of a metal such as stainless steel or titanium. A laminate obtained by fastening the cooling plate 50 and the support plate 70 with the second fastener 80 is referred to as a second laminate L2. As a material combination of each component, it is preferable that the material of the ceramic plate 20 is alumina (CTE is 6×10 -6 ~7×10 -6 / K), the material of the composite plate 30 is SiSiCTi (CTE is 7×10 -6 / K), the material of the cooling plate 50 is molybdenum (CTE is 5×10 -6 / K), the material of the support plate 70 is alumina (CTE is 6×10 -6 ~7×10 -6 / K), and the material of the first fastener 60 is titanium (CTE is 8.8×10 -6 / K). Next, a usage example of the component 10 for a semiconductor manufacturing apparatus will be described. The component 10 for a semiconductor manufacturing apparatus is disposed inside a chamber (not shown) for a semiconductor process. The support plate 70 is a component constituting the chamber. A wafer W is placed on the wafer placement portion 22. In this state, a DC voltage is applied to the electrostatic electrode 23 to adsorb the wafer W to the wafer placement portion 22. At the same time, current is passed through the heater electrode 24 to heat the wafer W to a specified temperature (e.g., 100°C). Then, the inside of the chamber is set to a specified vacuum atmosphere (or reduced-pressure atmosphere), and while supplying a process gas from a showerhead (not shown) provided at the top of the chamber, an RF voltage is applied to the cooling plate 50. Thereby, plasma is generated between the wafer W and the showerhead. Then, using this plasma, CVD film formation or etching is performed on the wafer W. Since the wafer W obtains heat from the plasma, while causing a coolant at a low temperature (e.g., -30°C) to flow through the coolant flow path 52, the power supplied to the heater electrode 24 is adjusted as needed to control the temperature of the wafer W to reach the specified temperature. The component 10 for a semiconductor manufacturing apparatus is obtained by fastening the first laminate L1 and the second laminate L2 with the first fastener 60 at room temperature, and then fastening the cooling plate 50 and the support plate 70 with the second fastener 80 at room temperature, thereby completing the component 10 for a semiconductor manufacturing apparatus. Therefore, at room temperature, both the first laminate L1 and the second laminate L2 are flat. When the wafer W and the ceramic plate 20 placed on the wafer placement portion 22 are heated from room temperature to a specified temperature (e.g., 100°C) and a coolant at a low temperature (e.g., -30°C) flows through the coolant flow path 52, the ceramic plate 20 in the first laminate L1 is at a high temperature and the composite plate 30 is at a low temperature. Although the CTE of the ceramic plate 20 and the CTE of the composite plate 30 are substantially the same, the temperatures of the two are different. Therefore, the ceramic plate 20 expands significantly compared to the composite plate 30. As a result, the first laminate L1 is deformed into a convex shape at the center. On the other hand, the entire second laminate L2 is at a low temperature. Since the CTE of the cooling plate 50 is smaller than the CTE of the support plate 70, the support plate 70 shrinks significantly compared to the cooling plate 50. As a result, the second laminate L2 is also deformed into a convex shape at the center. The state at this time is shown in Figure 4 . When the wafer W is cooled from the specified temperature, both the first laminate L1 and the second laminate L2 are also deformed into a convex shape at the center. Since both the first laminate L1 and the second laminate L2 are deformed into a convex shape at the center like this, the external thread portion 62 of the first fastener 60 does not strongly pull down the internal thread portion 64 of the composite plate 30. Figure 5The component 110 for a semiconductor manufacturing apparatus shown is an example in which a cooling plate 150 having a CTE greater than that of the support plate 70 is used instead of the cooling plate 50 (for example, the support plate 70 is made of alumina and the cooling plate 150 is made of aluminum alloy (A6061)). In this example, when the wafer W placed on the wafer placement unit 22 and the ceramic plate 20 are heated from room temperature to a specified temperature and a low-temperature refrigerant flows through the refrigerant flow path 52, the first laminate L1 is deformed with a convex shape in the center. On the other hand, the second laminate L3 (the laminate of the cooling plate 150 and the support plate 70 fastened by the second fastener 80) is at a low temperature as a whole. At this time, since the CTE of the cooling plate 50 is greater than that of the support plate 70, the cooling plate 150 shrinks significantly compared to the support plate 70. As a result, the second laminate L3 is deformed with a concave shape in the center. The state at this time is shown in Figure 5 . In this case, the external threaded portion 62 of the first fastener 60 strongly pulls the internal threaded portion 64 of the composite plate 30 downward. Therefore, the composite plate 30 may be damaged. In addition, when the CTE of the cooling plate 50 is equal to the CTE of the support plate 70, the first laminate L1 is deformed with a convex shape in the center, and the second laminate L2 is flat. In this case, the external threaded portion 62 of the first fastener 60 also strongly pulls the internal threaded portion 64 of the composite plate 30 downward, and the composite plate 30 may be damaged. In the component 10 for a semiconductor manufacturing apparatus described above, when the ceramic plate 20 is changed from room temperature to a high temperature (for example, 180 to 220 °C), the laminate of the ceramic plate 20 and the composite plate 30 (the first laminate L1) is deformed with a convex shape in the center. In addition, the laminate of the cooling plate 50 and the support plate 70 (the second laminate L2) fastened by the first fastener 60 is also deformed with a convex shape in the center. Therefore, it is possible to suppress the composite plate 30 from being pulled downward by the first fastener 60, and thus it is possible to prevent the composite plate 30 from being damaged. In addition, the CTE of the composite plate 30 is substantially the same as the CTE of the ceramic plate 20, and the CTE of the cooling plate 50 is less than the CTE of the support plate 70. Therefore, when the ceramic plate 20 is changed from room temperature to a high temperature, both the first laminate L1 and the second laminate L2 are deformed with a convex shape in the center. In addition, a plurality of second fasteners 80 are respectively provided along two or more concentric circles having different diameters. Accordingly, since the lower surface of the cooling plate 50 is strongly constrained by the support plate 70, deformation of one of the support plate 70 and the cooling plate 50 has a great influence on the other. In addition, it is preferable that the material of the ceramic plate 20 is alumina, the material of the composite plate 30 is SiSiCTi, the material of the cooling plate 50 is molybdenum, and the material of the support plate 70 is alumina. Accordingly, the effects of the present invention can be easily obtained. In addition, it is preferable that the material of the first fastener 60 is titanium. Accordingly, it is possible to make the stress generated in the internal threaded portion 64 of the composite plate 30 smaller. It should be noted that the present invention is not limited by any of the above embodiments. Of course, as long as it belongs to the technical scope of the present invention, it can be implemented in various ways. In the above embodiment, as the support plate 70, an annular member is exemplified, but it is not particularly limited thereto. For example, as the support plate 70, a circular member without a hole in the center can be used. In the above embodiment, the electrostatic electrode 23 and the heater electrode 24 are implanted in the ceramic plate 20, but it is not particularly limited thereto. For example, one or more of the electrostatic electrode 23, the heater electrode 24, and the RF electrode for plasma generation can be implanted in the ceramic plate 20. In the above embodiment, a gas passage for supplying a gas (e.g., a heat-conducting gas such as He) from the lower surface of the cooling plate 50 to the lower surface of the wafer W placed on the wafer placement portion 22 can be provided in the component 10 for a semiconductor manufacturing apparatus. In addition, a lift pin hole through which a lift pin for lifting the wafer W placed on the wafer placement portion 22 is inserted can be provided so as to penetrate from the lower surface of the cooling plate 50 to the wafer placement portion 22. In the above embodiment, the ceramic plate 20 can be configured to have a circular wafer placement portion 22 at the center and an annular focus ring placement portion on the outer periphery of the wafer placement portion 22. The focus ring placed on the focus ring placement portion has the function of stably generating plasma within the outer peripheral edge of the wafer W and the function of protecting the ceramic plate 20. In the above embodiment, the refrigerant flow path 52 is formed in a spiral shape when viewed from above, but it is not particularly limited thereto. For example, the refrigerant flow path 52 can be formed in a zigzag shape when viewed from above. In the above embodiment, the ceramic plate 20 and the composite plate 30 are joined by the metal bonding layer 40. However, a resin adhesive layer can be used instead of the metal bonding layer 40. In the above embodiment, the heat sink 12 is interposed between the composite plate 30 and the cooling plate 50. However, a sealing ring (O-ring) having the same outer diameter as the above composite plate 30 and cooling plate 50 can be interposed between them instead of the heat sink 12. Industrial Applicability The present invention can be used in a device for plasma-treating a wafer, for example. Reference Signs Components for semiconductor manufacturing equipment, 12 heat sink, 14 round hole, 20 ceramic plate, 22 wafer placement part, 22a sealing tape, 22b circular small protrusion, 22c reference plane, 23 static electricity electrode, 24 heater electrode, 30 composite plate, 40 metal bonding layer, 50 cooling plate, 52 refrigerant flow path, 54 through hole, 54a recess, 60 first fastener, 62 external thread part, 62a screw foot part, 62b screw head part, 64 internal thread part, 70 support plate, 72 circular hole, 74 through hole, 80 second fastener, 82 external thread part, 82a screw foot part, 82b screw head part, 84 internal thread part, 110 components for semiconductor manufacturing equipment, 150 cooling plate, C1, C3 large circles, C2, C4 small circles, L1 first laminate, L2, L3 second laminates, W wafer.

Claims

1. A component for a semiconductor manufacturing apparatus, wherein, it includes: a ceramic plate formed of a ceramic material and having a wafer placement portion on its upper surface; a composite plate formed of a composite material and joined to the lower surface of the ceramic plate; a cooling plate formed of a metal material and provided on the lower surface of the composite plate, having a refrigerant flow path; a first fastener for fastening the composite plate and the cooling plate; a support plate formed of an insulating material for supporting the lower surface of the cooling plate; and a second fastener for fastening the cooling plate and the support plate, when the ceramic plate changes from normal temperature to high temperature, the laminate of the ceramic plate and the composite plate deforms into a convex shape at the center, and the laminate of the cooling plate and the support plate fastened by the first fastener also deforms into a convex shape at the center.

2. The component for a semiconductor manufacturing apparatus according to claim 1, wherein, the coefficient of thermal expansion of the composite plate is substantially the same as that of the ceramic plate, the coefficient of thermal expansion of the cooling plate is less than that of the support plate.

3. The component for a semiconductor manufacturing apparatus according to claim 2, wherein, The absolute value of the difference between the coefficient of thermal expansion of the composite plate and that of the ceramic plate is 1×10 -6 / K or less. The coefficient of thermal expansion of the cooling plate is less than that of the support plate in the range of 1×10 -6 / K or more and 3×10 -6 / K or less.

4. The component for a semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein, a plurality of the second fasteners are respectively provided along two or more concentric circles with different diameters.

5. The component for a semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein, the ceramic material is alumina, the composite material is SiSiCTi, the metal material is molybdenum, the insulating material is alumina.

6. The component for a semiconductor manufacturing apparatus according to claim 5, wherein, the first fastener is made of titanium.

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