Ultraviolet / violet light excited blue fluorescent material, preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INST OF TECH
- Filing Date
- 2025-02-26
- Publication Date
- 2026-06-23
AI Technical Summary
In existing white LED technology, the different light decay of the three primary color chips leads to unstable color temperature, complex control circuits and high cost. When InGaN blue light chips are combined with yellow phosphors, the blue light part is too strong, resulting in uneven luminous intensity, low color rendering index and blue light hazards.
A blue fluorescent material BaHfSi2O7:xEu2+ based on an oxide doped with Eu2+ was developed. Its excitation spectrum ranges from 200 to 450 nm, and its emission spectrum ranges from 390 to 680 nm. It can emit blue light with a center wavelength of 472 nm under near-ultraviolet light excitation at 304 nm and is prepared by conventional solid-state reaction method.
It achieves high-efficiency blue light emission with an internal quantum efficiency of up to 83.67%. The emission intensity remains at 80% of the initial room temperature intensity at 150℃. It is suitable for white LEDs, solar-like LEDs, full-spectrum LEDs, and healthy lighting LEDs, avoiding low color rendering index and blue light hazards.
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Figure CN120098641B_ABST