Showerhead assembly and vapor deposition reactor

Abstract

The invention provides a showerhead assembly and a vapor deposition reactor. The spray head assembly comprises a gas distribution part and a spray head located below the gas distribution part, and a gas diffusion cavity is formed between the gas distribution part and the spray head; a gas inlet channel is arranged in the gas distribution part and is used for conveying process gas; a plurality of spraying holes are densely distributed in the spraying head, and the spraying holes are communicated with the gas inlet channel through the gas diffusion cavity; the spray head is provided with a plurality of accommodating holes which are sunken downwards from the upper surface, each accommodating hole is provided with a lower end face, one part of each accommodating hole is used for accommodating a heating element, the other part of each accommodating hole is used for accommodating a temperature measuring element, and the heating end of each heating element and the measuring end of each temperature measuring element are at least partially located in the corresponding accommodating hole. And the heating element and the temperature measuring element are isolated from the process gas. The invention is used for solving the problem of inaccurate temperature measurement and control of the spray head in the prior art.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor equipment, and in particular to a nozzle assembly and a vapor deposition reactor. Background Art

[0002] The Chemical Vapor Deposition (CVD) process usually involves a variety of chemical gas reactants reacting in a chamber, and the product is deposited on the target wafer substrate to form a uniform and dense film. During the film deposition process, the surface temperature of the wafer directly determines the composition, structure and properties of the generated compound film. Therefore, it is particularly important to achieve uniform and controllable wafer surface temperature during the process.

[0003] On the one hand, the wafer is placed on the surface of the heating plate to maintain a high temperature. On the other hand, the high-temperature wafer is subjected to heat convection and radiation heat exchange to the low-temperature area such as the air-distributing plate above the wafer. If the temperature of the air-distributing plate is uneven, the heat convection and radiation heat exchange between it and the wafer will affect the uniformity of the local temperature on the wafer surface, and ultimately affect the film quality. Figure 1 The resistance distribution diagram at a process temperature of 550°C is shown. Due to the uneven thermal field on the wafer surface, the resistance distribution is biased to the edge, rather than a uniform resistance distribution or a concentric circle pattern distribution. Red indicates high resistance and blue indicates low resistance.

[0004] Therefore, it is very important to monitor and control the temperature of the gas uniformity plate to make it uniform for the thin film deposition process. This can avoid uneven thermal radiation on the wafer surface, which may cause uneven temperature on the wafer surface, and improve the uniformity of thin film growth on the wafer.

[0005] The prior art generally inserts a temperature sensor and a heating element into the back plate above the uniformizing plate, and detects and controls the temperature of the back plate to affect the temperature of the uniformizing plate and make it more uniform. However, since a gas diffusion cavity is formed between the back plate and the uniformizing plate, the temperature detection of the back plate cannot accurately reflect the temperature distribution of the uniformizing plate. At the same time, the temperature control of the back plate is affected by the radial flow and heat exchange of the gas in the gas diffusion cavity, and the temperature control effect on the uniformizing plate is limited, and the temperature distribution of the uniformizing plate cannot be accurately controlled. In addition, although the patent document CN102102194B discloses that its temperature sensor is close to the upper surface of the uniformizing plate, since its temperature sensor is still in the gas diffusion cavity environment, the gas flow makes it impossible to accurately measure the temperature, and it is difficult to ensure the uniform temperature of the uniformizing plate. Summary of the invention

[0006] The purpose of the present invention is to provide a nozzle assembly and a vapor deposition reactor to solve the problem of inaccurate temperature measurement and control of the nozzle in the prior art. By directly monitoring and controlling the temperature of the nozzle, the nozzle temperature can be accurately measured and controlled, which helps to make the wafer temperature uniform and form a high-quality uniform film.

[0007] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0008] A showerhead assembly comprises a gas distribution component and a showerhead located below the gas distribution component, wherein a gas diffusion cavity is formed between the gas distribution component and the showerhead; an air inlet passage is provided in the gas distribution component for conveying process gas; a plurality of spray holes are densely distributed on the showerhead, and the spray holes are connected with the air inlet passage through the gas diffusion cavity;

[0009] The shower head is provided with a plurality of accommodating holes recessed downward from the upper surface, and the accommodating holes have a lower end surface. A portion of the accommodating holes is used to accommodate a heating element, and another portion of the accommodating holes is used to accommodate a temperature measuring element. The heating end of the heating element and the measuring end of the temperature measuring element are at least partially located in the accommodating holes, and the heating element and the temperature measuring element are isolated from the process gas.

[0010] Optionally, the gas distribution component is provided with a plurality of protrusions extending downward along the lower surface, the protrusions are embedded in the accommodating holes, and a sealing hole is opened in the gas distribution component, the sealing hole extends downward from the upper surface of the gas distribution component to a lower end surface close to the protrusions, the heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the sealing hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the upper opening of the sealing hole.

[0011] Optionally, the shower head includes a central area contacting the gas diffusion cavity and an edge area surrounding the central area; and the sealing hole is provided in the central area.

[0012] Optionally, the gas distribution component is provided with a through hole penetrating the upper and lower surfaces, the through hole is connected to the accommodating hole in the edge area of ​​the shower head, the heating end of the heating element and / or the measuring end of the temperature measuring element is located at the bottom of the accommodating hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the upper opening of the through hole.

[0013] Optionally, a plurality of receiving grooves are provided on the upper surface of the shower head, each receiving groove is connected to one of the receiving holes in the edge area and the outer circumferential side wall of the shower head, the heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the receiving hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the receiving groove.

[0014] Optionally, the density of the receiving holes in the central area is greater than the density of the receiving holes in the edge area.

[0015] Optionally, a side wall hole is opened on the outer circumferential side wall of the sprinkler head, and the side wall hole extends obliquely downward to the lower surface close to the edge area, the heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the side wall hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the side wall hole.

[0016] Optionally, the accommodating holes are evenly distributed on the surface of the shower head, and the heating elements and the temperature measuring elements are alternately arranged.

[0017] Optionally, the spray hole includes a first exhaust hole, which is arranged around the accommodating hole, and has a first air inlet and a first air outlet and a second air outlet formed by branches of the first air inlet, the first air outlet is close to the bottom of the accommodating hole, and the second air outlet is far away from the bottom of the accommodating hole relative to the first air outlet.

[0018] Optionally, the spray hole further includes a second exhaust hole, the second exhaust hole has a second air inlet, and a cross-section of the second air inlet is smaller than a cross-section of the first air inlet.

[0019] Optionally, the second exhaust hole passes through the upper and lower surfaces of the central area of ​​the shower head, and the third air outlet of the second exhaust hole has an outlet cross-section substantially equal to that of the first air outlet and the second air outlet.

[0020] Optionally, the third air outlet of the second air outlet is equidistant from the first air outlet and the second air outlet.

[0021] Optionally, the shower head includes a plurality of temperature control zones, and each temperature control zone includes a plurality of heating elements and a plurality of temperature measuring elements.

[0022] Optionally, the lower end surface is close to the lower surface of the shower head.

[0023] Optionally, the heating end of the heating element and the measuring end of the temperature measuring element are located at the bottom of the accommodating hole.

[0024] Optionally, the nozzle assembly is used in a vapor deposition reactor, which includes a reaction chamber side wall, and the circumferential outer edge of the nozzle includes a connecting portion extending outward, and the connecting portion can be covered on the reaction chamber side wall to form a reaction chamber in a sealed manner with the reaction chamber side wall.

[0025] Optionally, the connecting portion is located at the upper part of the shower head, and a connecting section is provided between the lower part of the shower head and the connecting portion; the circumferential outer edge of the gas distribution component is sealed with the connecting portion, and the outer side surface of the lower part of the gas distribution component is sealed with the inner side surface of the connecting section.

[0026] Optionally, the gas distribution component has a downward boss, a side wall of the boss is in close contact and sealing relationship with an inner side surface of the connecting section, and the boss and the shower head are combined to form a gas diffusion chamber.

[0027] Optionally, the boss is a truncated boss, and the angle between the connecting section and the connecting portion is greater than 90°.

[0028] Optionally, the boss is columnar, and the connecting section is perpendicular to the connecting portion.

[0029] Optionally, a sealing platform is extended downward from the outer periphery of the boss, the outer peripheral surface and the lower end surface of the sealing platform are in close contact and sealed with the shower head, and the inner peripheral surface of the sealing platform surrounds the gas diffusion chamber.

[0030] A vapor deposition reactor, characterized in that it includes a nozzle assembly as described in any of the above items, a thermal insulation pad combined with the upper surface of the gas distribution component, and a cooling plate combined with the upper surface of the thermal insulation pad.

[0031] Optionally, the thermal insulation pad has a uniform thickness and fits tightly with the gas distribution component and the cooling plate.

[0032] Optionally, the thickness of the thermal insulation pad ranges from 1 mm to 20 mm.

[0033] Optionally, the thermal insulation pad is made of Teflon, high temperature ceramics, polymer foam, carbon fiber composite material or quartz.

[0034] Optionally, the thermal insulation pad is a thermal insulation air pad, and the heights of the thermal insulation air pad are consistent at all positions.

[0035] Optionally, the ratio of the thermal conductivity of the thermal insulation pad to the thickness of the thermal insulation pad satisfies κ / h=α / (ΔT·S), wherein κ represents the thermal conductivity of the material selected for the thermal insulation pad, h represents the thickness of the thermal insulation pad, α represents the thermal conductivity of the thermal insulation pad, ΔT represents the temperature difference between the sprinkler head and the cooling plate, and S represents the area of ​​the thermal insulation pad.

[0036] Compared with the prior art, the present invention has the following advantages:

[0037] The nozzle assembly and vapor deposition reactor provided by the present invention are provided with a plurality of receiving holes which are recessed downward from the upper surface of the nozzle. The receiving holes have a lower end surface. A part of the receiving holes is used to receive a heating element, and another part is used to receive a temperature measuring element. The heating end of the heating element and the measuring end of the temperature measuring element are at least partially located in the receiving hole, and the heating element and the temperature measuring element are isolated from the process gas. The temperature measuring element is located in the receiving hole, and measures the temperature inside the nozzle. Compared with the prior art, the measured temperature value can reflect the actual situation of the nozzle under actual working conditions. Moreover, the heating element is located in the receiving hole. Compared with the prior art, heat conduction is directly carried out between the heating element and the nozzle, rather than indirectly controlling the temperature of the nozzle through a gas distribution component. The temperature of the local area of ​​the nozzle can be controlled more accurately, and the problem of temperature control zone deviation caused by the thermal convection of the transverse diffusion airflow in the gas diffusion chamber will not be caused. It is helpful to improve the measurement and control of the temperature of each local area of ​​the nozzle, so as to improve the temperature uniformity of the nozzle, ensure the temperature uniformity of the wafer surface during the process, and achieve high-quality film consistency growth. In addition, the heating element and the temperature measuring element are isolated from the process gas in the gas diffusion chamber, so as to avoid the process gas from corroding the heating element and the temperature measuring element and causing process gas pollution, thereby increasing the service life of the heating element and the temperature measuring element. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0039] Figure 1 The resistance distribution diagram of the existing thin film deposition process at 550°C;

[0040] Figure 2 A structural diagram of a vapor deposition reactor provided by one embodiment of the present invention;

[0041] Figure 3 A structural diagram of a vapor deposition reactor provided by another embodiment of the present invention;

[0042] Figure 4 A structural diagram of a vapor deposition reactor provided in yet another embodiment of the present invention;

[0043] Figure 5 for Figure 2 , Figure 3 , Figure 4 Schematic diagram of the distribution of temperature measuring elements and heating elements in the middle sprinkler head;

[0044] Figure 6is a partial schematic diagram of a sprinkler head;

[0045] Figure 7 for Figure 2 , Figure 3 , Figure 4 The resistance distribution diagram of the thin film deposition at a process temperature of 550°C in the vapor deposition reactor shown;

[0046] Figure 8a , Figure 8b They are the front view and top view of the thermal insulation pad respectively.

[0047] The reference numerals are as follows:

[0048] 100-reaction chamber; W-wafer;

[0049] 110-sprinkler assembly; 120-bottom wall; 130-side wall; 140-base;

[0050] 111-gas distribution member; 1111-inlet passage; 1112-protrusion; 1113-sealing hole; 1115-boss; 1116-sealing platform;

[0051] 112-spray head; 1121-spray hole; 1122-accommodation hole; 1123-accommodation groove;

[0052] 113-gas diffusion chamber;

[0053] 114-heating element; 115-temperature measuring element;

[0054] A-central area; B-peripheral area;

[0055] 1124-first exhaust hole; 11241-first air inlet; 11242-first air outlet; 11243-second air outlet; 1125-second exhaust hole; 11251-second air inlet; 11252-third air outlet;

[0056] 1126-connecting part; 1127-connecting section;

[0057] 116 - thermal insulation pad; screw hole 1161; 117 - cooling plate. DETAILED DESCRIPTION

[0058] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the accompanying drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0059] like Figure 2 , which is a schematic diagram of a vapor deposition reactor provided by the present invention, the vapor deposition reactor comprises a reaction chamber 100, the reaction chamber 100 is used to process one or more wafers W, including forming a thin film on the surface of the wafer W. The reaction chamber 100 is surrounded by a nozzle assembly 110 at the top, a bottom wall 120 at the bottom, and a side wall 130 between the nozzle assembly 110 and the bottom wall 120, and the bottom wall 120 and the side wall 130 form the cavity part of the reaction chamber 100. A base 140 is arranged in the reaction chamber 100, and the wafer W is placed on the top of the base 140.

[0060] As mentioned above, during the thin film deposition process, the shower head is facing the wafer and its temperature is lower than that of the wafer. The temperature uniformity of the shower head has a great influence on the temperature uniformity of the wafer surface. It is understandable that the temperature uniformity is characterized by the difference in temperature of each area of ​​the shower head. Therefore, accurate measurement and control of the temperature of the local area of ​​the shower head is crucial to improve the temperature uniformity of the shower head.

[0061] Based on this, Figure 2 , Figure 3 , Figure 4 As shown, the nozzle assembly 110 provided by the present invention includes a gas distribution component 111 and a shower head 112 located below the gas distribution component 111, a gas diffusion chamber 113 is formed between the gas distribution component 111 and the shower head 112; an air inlet channel 1111 is provided in the gas distribution component 111 for conveying process gas; a plurality of spray holes 1121 are densely distributed on the shower head 112, and the spray holes 1121 are connected to the air inlet channel 1111 through the gas diffusion chamber 113. In the process ( Figure 2 , Figure 3 , Figure 4The direction of the arrow in the figure is the process gas flow direction), the process gas in a gas supply device enters the gas diffusion chamber 113 through the gas inlet channel 1111 of the gas distribution component 111, the process gas is evenly diffused in the gas diffusion chamber 113, and the process gas distribution at each position is relatively balanced, and then the evenly distributed process gas is transported to the reaction chamber 100 through the densely distributed nozzles 1121 on the shower head 112.

[0062] The shower head 112 is provided with a plurality of accommodating holes 1122 recessed downward from the upper surface, a portion of the accommodating holes 1122 is used to accommodate the heating element 114, and another portion is used to accommodate the temperature measuring element 115. The heating end of the heating element 114 and the measuring end of the temperature measuring element 115 are at least partially located in the accommodating holes 1122, and the heating element 114 and the temperature measuring element 115 are isolated from the process gas. That is, the heating element 114 is isolated from the process gas, and the temperature measuring element 115 is isolated from the process gas.

[0063] In the present invention, by providing the receiving hole 1122 in the shower head 112 and embedding the heating element 114 and the temperature measuring element 115 into the shower head 112, the local temperature of the shower head 112 can be accurately measured and controlled by contact heat conduction. The temperature measuring element 115 is located in the accommodating hole 1122, and measures the temperature inside the shower head 112. Compared with the prior art, the temperature value measured by the temperature measuring element 115 can better reflect the real temperature of the shower head 112 in the area where the temperature measuring element 115 is located, and is free from the temperature measurement deviation caused by the radial flow of the airflow in the gas diffusion chamber 113. In addition, the heating element 114 is located in the accommodating hole 1122. Compared with the prior art, the heating element 114 and the shower head 112 are directly heat-conducted, rather than indirectly controlling the temperature of the shower head 112 through the gas distribution component 111. The temperature of the local area where the heating element 114 of the shower head 112 is located can be more accurately controlled, and the problem of temperature control zone deviation caused by the thermal convection of the transverse diffused airflow in the gas diffusion chamber 113 will not be affected. This helps to improve the measurement and control of the temperature of each local area of ​​the shower head 112, so as to improve the temperature uniformity of the shower head, thereby ensuring the temperature uniformity of the wafer surface during the process and achieving high-quality film consistency growth. In addition, the heating element 114 and the temperature measuring element 115 are isolated from the process gas in the gas diffusion chamber 113, so as to prevent the process gas from corroding the heating element 114 and the temperature measuring element 115 and causing process gas pollution, thereby increasing the service life of the heating element 114 and the temperature measuring element 115. At the same time, since the heating element 114 and the temperature measuring element 115 need to be introduced from the atmosphere side to the corresponding heating point / temperature measuring point, the heating element 114 and the temperature measuring element 115 are isolated from the process gas in the gas diffusion chamber 113, so as to ensure that the gas diffusion chamber 113 is absolutely isolated from the outside world (atmosphere side).

[0064] like Figure 5 As shown, the receiving holes 1122 are evenly distributed on the surface of the shower head 112, and the heating elements 114 and the temperature measuring elements 115 are alternately arranged. Therefore, the heating elements 114 and the temperature measuring elements 115 are evenly distributed in the shower head 112, and the temperature of each position of the shower head 112 can be monitored by the evenly distributed temperature measuring elements 115, and the temperature of each position can be compensated and controlled respectively by the evenly distributed heating elements 114, so that the temperature uniformity of the entire shower head 112 can be improved.

[0065] Furthermore, the shower head 112 can be divided into a plurality of temperature control zones, each of which includes a plurality of heating elements 114 and a plurality of temperature measuring elements 115. A controller is provided for each temperature control zone, and the controller is electrically connected to each heating element 114 and each temperature measuring element 115 in the temperature control zone, and performs a comprehensive analysis based on the temperature measurement data of each temperature measuring element 115, and controls each heating element 114 to heat according to the analysis result. Thus, the temperature of each area of ​​the shower head 112 can be controlled according to the temperature requirements of different areas, and the surface uniformity of the shower head 112 can be further improved. At the same time, the number of controllers can be reduced, and the cost can be reduced. When the interference between the controls of each area is not considered, the controllers can also be combined into a master controller, and each temperature control zone is controlled separately through the master controller to simplify the components.

[0066] like Figure 6 As shown, the lower end surface of the receiving hole 1122 is close to the lower surface of the shower head 112. Therefore, the temperature value measured by the temperature measuring element 115 is close to the temperature value of the lower surface of the shower head 112, and the heating element 114 can directly heat the lower surface of the shower head 112, thereby realizing temperature monitoring and control of the lower surface of the shower head 112, which helps to improve the temperature uniformity of the lower surface of the shower head 112, thereby better realizing the temperature uniformity of the wafer. Figure 6 As shown, the heating end of the heating element 114 and the measuring end of the temperature measuring element 115 are located at the bottom of the accommodating hole 1122, thereby further improving the temperature uniformity of the lower surface of the shower head 112. It should be noted that, through research, it is found that one end of the shower head 112 in the thickness direction is cooled by the gas diffusion cavity 113 and radiated heat exchanged by the gas distribution component 111, and the other end faces the wafer W and is heated by the thermal radiation of the wafer W, resulting in a temperature gradient in the thickness direction of the shower head 112, and the thermal radiation of the shower head 112 to the wafer W is mainly affected by the temperature distribution of the end face facing the wafer W, that is, the lower surface. Therefore, through the above-mentioned setting, the temperature measurement and control of the local lower surface of the shower head 112 can be made more accurate, which is helpful to improve the temperature uniformity of the lower surface of the shower head 112, so as to improve the heat exchange uniformity of the wafer W by thermal radiation.

[0067] Please refer to Figure 2 , Figure 3 , Figure 4 , Figure 6The gas distribution component 111 is provided with a plurality of protrusions 1112 extending downwardly along the lower surface, and the protrusions 1112 are embedded in the accommodating holes 1122. A sealing hole 1113 is opened in the gas distribution component 111, and the sealing hole 1113 extends downward from the upper surface of the gas distribution component 111 to a lower end surface close to the protrusions 1112. The heating end of the heating element 114 and / or the measuring end of the temperature measuring element 115 are located at the bottom of the sealing hole 1113, and the wiring harness of the heating element 114 and / or the temperature measuring element 115 passes through the upper opening of the sealing hole 1113. Among them, the meaning of closeness can be that on the basis of ensuring the mechanical strength and air tightness of the lower end face of the protrusion 1112, the wall thickness of the lower end face of the protrusion 1112 forming the sealing hole 1113 is as thin as possible, so that the heating end of the heating element 114 and / or the measuring end of the temperature measuring element 115 can be as close to the lower end face of the protrusion 1112 as possible. Based on the above teaching, the wall thickness of the lower end face can vary depending on the material of the protrusion 1112, which will not be repeated here. Thus, the heating end of the heating element 114 and the measuring end of the temperature measuring element 115 can be extended into the bottom of the sealing hole 1113 and taken out through the upper opening of the sealing hole 1113, which is convenient for the installation and disassembly of the heating element 114 and the temperature measuring element 115. At the same time, the sealing hole 1113 can achieve the isolation of the heating element 114 and the temperature measuring element 115 from the process gas in the gas diffusion chamber 113.

[0068] The shower head 112 includes a central region A contacting the gas diffusion chamber 113 and an edge region B surrounding the central region A; the sealing hole 1113 is provided in the central region A. It can be understood that a certain distance is spaced between the upper surface of the central region A of the shower head 112 and the lower surface of the gas distribution member 111 to form the gas diffusion chamber 113, that is, the central region A of the shower head 112 is exposed to the gas diffusion chamber 113. In order to isolate the heating element 114 and the temperature measuring element 115 from the process gas in the gas diffusion chamber 113, the sealing hole 1113 is provided in the central region A so that the heating element 114 and the temperature measuring element 115 in the central region A are isolated from the process gas in the gas diffusion chamber 113.

[0069] like Figure 2As shown, the upper surface of the spray head 112 is provided with a plurality of receiving grooves 1123, each receiving groove 1123 communicates with one of the receiving holes 1122 in the edge region B and the outer circumferential side wall of the spray head 112, the heating end of the heating element 114 and / or the measuring end of the temperature measuring element 115 are located at the bottom of the receiving hole 1122, and the wiring harness of the heating element 114 and / or the temperature measuring element 115 passes through the receiving groove 1123. Thus, the heating end of the heating element 114 and the measuring end of the temperature measuring element 115 can be extended into the bottom of the receiving hole 1122 and taken out through the receiving groove 1123, which facilitates the installation and removal of the heating element 114 and the temperature measuring element 115 in the edge region A.

[0070] In another embodiment, if Figure 3 As shown, the gas distribution member 111 is provided with a through hole penetrating the upper and lower surfaces, the through hole is communicated with the accommodating hole 1122 in the edge region B of the shower head 112, the heating end of the heating element 114 and / or the measuring end of the temperature measuring element 115 are located at the bottom of the accommodating hole 1122, and the wiring harness of the heating element 114 and / or the temperature measuring element 115 passes through the upper opening of the through hole. Therefore, the heating end of the heating element 114 and the measuring end of the temperature measuring element 115 can be extended into the bottom of the accommodating hole 1122 and taken out through the upper opening of the through hole, which facilitates the installation and removal of the heating element 114 and the temperature measuring element 115 in the edge region B.

[0071] In other embodiments, the outer circumferential side wall of the shower head 112 is provided with a side wall hole, the side wall hole obliquely extends downward to the lower surface close to the edge area B, the heating end of the heating element 114 and / or the measuring end of the temperature measuring element 115 are located at the bottom of the side wall hole, and the wiring harness of the heating element 114 and / or the temperature measuring element 115 passes through the side wall hole. In this embodiment, for the edge area B of the shower head 112, an oblique hole is provided from the outer circumferential side wall to the lower surface close to the edge area B to form a space for accommodating the heating element 114 and the temperature measuring element 115, the heating end of the heating element 114 and the measuring end of the temperature measuring element 115 can be extended into the bottom of the side wall hole and taken out, so as to facilitate the installation and removal of the heating element 114 and the temperature measuring element 115 in the edge area B.

[0072] It is understandable that the uniform distribution of the reaction gas in the reaction chamber 100 is very important for the quality of thin film deposition. The densely distributed nozzles 1121 on the shower head 112 are used to introduce the reaction gas into the reaction chamber 100. Therefore, the uniform distribution of the nozzles 1121 helps the reaction gas to be uniformly introduced into the reaction chamber 100. However, in the central area A of the shower head 112, the receiving hole 1122 occupies a part of the position of the nozzles 1121, which may affect the uniformity of the reaction gas distribution in the reaction chamber 100. Based on this, in the present invention, Figure 6 As shown, the spray hole 1121 includes a first exhaust hole 1124, which is arranged around the receiving hole 1122. The first exhaust hole 1124 has a first air inlet 11241 and a first air outlet 11242 and a second air outlet 11243 formed by branches of the first air inlet 11241. The first air outlet 11242 is close to the bottom of the receiving hole 1122, and the second air outlet 11243 is far away from the bottom of the receiving hole 1122 relative to the first air outlet 11242. By adding an air outlet below the receiving hole 1122, the uniformity of the distribution of the reaction gas in the reaction chamber 100 can be improved.

[0073] like Figure 6 As shown, the spray hole 1121 also includes a second exhaust hole 1125, and the second exhaust hole 1125 has a second air inlet 11251, and the cross-section of the second air inlet 11251 is smaller than the cross-section of the first air inlet 11242 to facilitate the consistency of gas flow speeds in the first exhaust hole 1124 and the second exhaust hole 1125.

[0074] Furthermore, the second exhaust hole 1125 passes through the upper and lower surfaces of the central area A of the shower head 112, and the outlet cross-sections of the third gas outlet 11252 of the second exhaust hole 1125 are substantially equal to the first gas outlet 11242 and the second gas outlet 11243. This ensures that the flow rate of the reaction gas flowing out of each gas outlet is consistent, further improving the uniformity of the reaction gas distribution in the reaction chamber 100.

[0075] In addition, the third gas outlet 11252 of the second gas outlet 1125 and the first gas outlet 11242 and the second gas outlet 11243 are equidistant from each other, so as to improve the distribution uniformity of the reaction gas in the reaction chamber 100 .

[0076] As mentioned above, the nozzle assembly 110 is used in a vapor deposition reactor, such as Figure 2 , Figure 3 , Figure 4As shown, the vapor deposition reactor includes a reaction chamber side wall 130, and the circumferential outer edge of the shower head 112 includes a connecting portion 1126 extending outward, and the connecting portion 1126 can be covered on the reaction chamber side wall 130 to form a reaction chamber 100 in a sealed manner with the reaction chamber side wall 130. Compared with the method in the prior art where the shower head 112 is installed on a cover plate and the cover plate is covered with the reaction chamber side wall 130, the shower head 112 in this embodiment is directly covered with the reaction chamber side wall 130. On the one hand, the shower head 112 serves as a cover plate, eliminating the cover plate and reducing the cost. On the other hand, the surface of the shower head assembly 110 facing the reaction chamber 100 is formed as a whole, without gaps for parts to be combined, reducing the risk of gas accumulation forming dead zones during the process and improving the quality of thin film deposition.

[0077] like Figure 2 , Figure 3 , Figure 4 As shown, the connecting portion 1126 is located at the upper part of the shower head 112, and a connecting section 1127 is provided between the lower part of the shower head 112 and the connecting portion 1126, thereby forming a downwardly recessed central area A in the shower head 112; the circumferential outer edge of the gas distribution component 111 is sealed with the connecting portion 1126, and the outer side surface of the lower part of the gas distribution component 111 is sealed with the inner side surface of the connecting section 1127, thereby forming the gas diffusion chamber 113 between the shower head 112 and the gas distribution component 111.

[0078] Specifically, the gas distribution component 111 has a downward boss 1115, the side wall of the boss 1115 is sealed against the inner side of the connecting section 1127, and the lower end surface of the boss 1115 and the shower head 112 are enclosed to form a gas diffusion chamber 113. The boss 1115 increases the contact area between the gas distribution component 111 and the shower head 112, thereby improving the sealing effect.

[0079] like Figure 2 As shown, the boss 1115 is a truncated boss, and the angle between the connecting section 1127 and the connecting portion 1126 is greater than 90°. Therefore, the gas distribution member 111 and the connecting section 1126 of the shower head 112 are connected by an inclined surface, which can not only meet the requirement of high sealing performance between the boss 1115 and the connecting section 1126, but also facilitate alignment and installation.

[0080] In addition, in order to facilitate design and processing, the boss 1115 is columnar, and the connecting section 1127 is perpendicular to the connecting portion 1126. Thus, the assembly can be designed vertically, reducing the production and processing costs.

[0081] In some embodiments, Figure 4As shown, a sealing platform 1116 extends downward from the outer periphery of the boss 1115, and the outer periphery and the lower end surface of the sealing platform 1116 are sealed with the shower head 112, and the inner periphery of the sealing platform 1116 surrounds the gas diffusion chamber 113. Thus, the gas diffusion chamber 113 is mechanically sealed by the sealing platform 1116, and the sealing platform 1116 participates in the encirclement and formation of the gas diffusion chamber 113, so that the sealing effect of the gas diffusion chamber 113 is better, and the use of a sealing ring between the shower head 112 and the gas distribution member 111 is avoided, additional components are reduced, and the problem of the sealing ring material being susceptible to corrosion and generating particles or polluting the process gas is avoided.

[0082] Please continue to refer to Figure 2 , Figure 3 and Figure 4 The vapor deposition reactor provided by the present invention also includes a thermal insulation pad 116 combined with the upper surface of the gas distribution component 111 and a cooling plate 117 combined with the upper surface of the thermal insulation pad 116. It should be noted that the temperature control of the gas distribution component 111 indirectly affects the shower head 112. Therefore, it is necessary to accurately control the temperature change of the gas distribution component 111. The thermal insulation pad 116 is used to control the heat exchange efficiency between the cooling plate 117 and the gas distribution component 111 to avoid the problem of difficulty in controlling the temperature of the gas distribution component 111 due to excessive heat exchange rate caused by direct contact between the cooling plate 117 and the gas distribution component 111. By dissipating heat from the shower head 112, the temperature of the shower head 112 can be controlled at a higher process temperature, and the temperature will not be increased to above the set temperature due to the thermal radiation of the high-temperature wafer, resulting in temperature runaway. At the same time, it is avoided that the shower head causes local temperature concentration due to heat dissipation problems, which affects its temperature unevenness.

[0083] A cooling fluid can be circulated in the cooling plate 117 to achieve cooling. The cooling plate 117 is separated from the gas distribution component 111 by a heat insulation pad 116 to prevent the cooling plate 117 and the gas distribution component 111 from directly contacting each other and taking away a large amount of heat, thereby preventing the temperature of the shower head 112 from reaching a set temperature (e.g., 100-200° C.).

[0084] The material of the thermal insulation pad 116 can be Teflon, high temperature ceramics (such as alumina ceramics, silicon carbide ceramics, etc.), polymer foam, carbon fiber composite materials, quartz, etc., but is not limited to the above materials. The thermal insulation effect of the thermal insulation pad 116 should be within a suitable range, and the thickness of the thermal insulation pad 116 can be designed to range from 1mm to 20mm, and the specific thickness depends on the selected material.

[0085] The calculation formula for the heat conductivity α of the thermal insulation pad 116 is α=κ·ΔT·S / h, where κ is the thermal conductivity constant of the material selected for the thermal insulation pad 116, ΔT is the temperature difference between the sprinkler head 112 and the cooling plate 117; S is the area of ​​the thermal insulation pad 116; and h is the thickness of the thermal insulation pad 116.

[0086] In this embodiment, preferably, the heat conductivity α is in the range of 0 to 5 kW, so as to achieve the effect of ensuring the cooling efficiency of the cooling plate 117 and avoiding excessive cooling of the gas distribution member 111 while achieving the thermal insulation pad 116, and accurately controlling the temperature change of the gas distribution member 111. Therefore, the ratio of the thermal conductivity κ of the thermal insulation pad 116 to the thickness h of the thermal insulation pad 116 satisfies κ / h=α / (ΔT·S).

[0087] like Figure 8a , 8b As shown, the thickness of the thermal insulation pad 116 is uniform and fits closely with the gas distribution component 111 and the cooling plate 117 to ensure consistent thermal insulation performance at all positions. The thermal insulation pad 116 is provided with a plurality of screw holes 1161 for mounting and fixing with the gas distribution component 111 and the cooling plate 117.

[0088] In other embodiments, air insulation may be used instead of high-temperature insulation materials for insulation. For example, the insulation pad 116 may be an insulation air pad, and the insulation air pad has the same height at each position to ensure consistent insulation performance at each position.

[0089] Through experiments, the resistance distribution diagram of the nozzle assembly and vapor deposition reactor provided by the present invention at a process temperature of 550°C is as follows: Figure 7 As shown. Figure 1 and Figure 7 By comparison, the resistance distribution is uniform without obvious deviation, which indicates that the thermal field on the wafer surface is uniform.

[0090] In summary, the present invention can accurately measure and control the temperature of the shower head by directly monitoring and controlling the temperature of the shower head, thereby helping to make the temperature of the wafer uniform so as to form a high-quality and uniform thin film.

[0091] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0092] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A showerhead assembly, comprising a gas distribution component and a showerhead located below the gas distribution component, wherein a gas diffusion chamber is formed between the gas distribution component and the showerhead; an air inlet passage is provided in the gas distribution component for conveying process gas; a plurality of spray holes are densely distributed on the showerhead, and the spray holes are connected to the air inlet passage through the gas diffusion chamber; It is characterized in that The shower head is provided with a plurality of accommodating holes recessed downward from the upper surface, and the accommodating holes have a lower end surface. A portion of the accommodating holes is used to accommodate a heating element, and another portion of the accommodating holes is used to accommodate a temperature measuring element. The heating end of the heating element and the measuring end of the temperature measuring element are at least partially located in the accommodating holes, and the heating element and the temperature measuring element are isolated from the process gas.

2. The nozzle assembly according to claim 1, It is characterized in that The gas distribution component is provided with a plurality of protrusions extending downward along the lower surface, and the protrusions are embedded in the accommodating holes. A sealing hole is provided in the gas distribution component, and the sealing hole extends downward from the upper surface of the gas distribution component to a lower end surface close to the protrusions. The heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the sealing hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the upper opening of the sealing hole.

3. The nozzle assembly according to claim 2, It is characterized in that The shower head comprises a central area contacting the gas diffusion cavity and an edge area surrounding the central area; the sealing hole is arranged in the central area.

4. The spray head assembly according to claim 3, It is characterized in that The gas distribution component is provided with a through hole penetrating the upper and lower surfaces, the through hole is connected to the accommodating hole in the edge area of ​​the shower head, the heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the accommodating hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the upper opening of the through hole.

5. The spray head assembly according to claim 3, It is characterized in that A plurality of receiving grooves are provided on the upper surface of the shower head, each receiving groove is connected to one of the receiving holes in the edge area and the outer circumferential side wall of the shower head, the heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the receiving hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the receiving groove.

6. The spray head assembly according to claim 3, It is characterized in that The density of the receiving holes in the central area is greater than the density of the receiving holes in the edge area.

7. The spray head assembly according to claim 3, It is characterized in that A side wall hole is provided on the outer circumferential side wall of the sprinkler head, and the side wall hole extends obliquely downward to the lower surface close to the edge area. The heating end of the heating element and / or the measuring end of the temperature measuring element are located at the bottom of the side wall hole, and the wiring harness of the heating element and / or the temperature measuring element passes through the side wall hole.

8. The spray head assembly according to claim 1, It is characterized in that The accommodating holes are evenly distributed on the surface of the shower head, and the heating elements and the temperature measuring elements are alternately arranged.

9. The spray head assembly according to claim 1, It is characterized in that The spray hole includes a first exhaust hole, which is arranged around the accommodating hole. The first exhaust hole has a first air inlet and a first air outlet and a second air outlet formed by branches of the first air inlet. The first air outlet is close to the bottom of the accommodating hole, and the second air outlet is far away from the bottom of the accommodating hole relative to the first air outlet.

10. The spray head assembly according to claim 9, It is characterized in that The spray hole further includes a second exhaust hole having a second air inlet, and a cross section of the second air inlet is smaller than a cross section of the first air inlet.

11. The spray head assembly according to claim 10, It is characterized in that The second exhaust hole passes through the upper and lower surfaces of the central area of ​​the shower head, and the third air outlet of the second exhaust hole has an outlet cross-section substantially equal to that of the first air outlet and the second air outlet.

12. The spray head assembly according to claim 11, It is characterized in that The third air outlet of the second air outlet is equidistant from the first air outlet and the second air outlet.

13. The spray head assembly according to claim 1, It is characterized in that The shower head comprises a plurality of temperature control zones, and each temperature control zone comprises a plurality of heating elements and a plurality of temperature measuring elements.

14. The spray head assembly according to claim 1, It is characterized in that The lower end surface is close to the lower surface of the shower head.

15. The spray head assembly according to claim 1, It is characterized in that The heating end of the heating element and the measuring end of the temperature measuring element are located at the bottom of the accommodating hole.

16. The spray head assembly according to claim 1, It is characterized in that The nozzle assembly is used in a vapor deposition reactor, which includes a reaction chamber side wall. The circumferential outer edge of the nozzle includes a connecting portion extending outward, and the connecting portion can be covered on the reaction chamber side wall to form a reaction chamber in a sealed manner with the reaction chamber side wall.

17. The spray head assembly according to claim 16, It is characterized in that The connecting part is located at the upper part of the shower head, and a connecting section is provided between the lower part of the shower head and the connecting part; the circumferential outer edge of the gas distribution component is sealed with the connecting part, and the outer side surface of the lower part of the gas distribution component is sealed with the inner side surface of the connecting section.

18. The spray head assembly according to claim 17, It is characterized in that The gas distribution component has a downward boss, the side wall of the boss is in close contact and sealed with the inner side surface of the connecting section, and the boss and the shower head are combined to form a gas diffusion chamber.

19. The spray head assembly according to claim 18, It is characterized in that The boss is a truncated boss, and the angle between the connecting section and the connecting portion is greater than 90°.

20. The spray head assembly according to claim 18, It is characterized in that The boss is columnar, and the connecting section is perpendicular to the connecting portion.

21. The spray head assembly according to claim 18, It is characterized in that A sealing platform is extended downwardly from the outer periphery of the boss, the outer peripheral surface and the lower end surface of the sealing platform are in close contact with the shower head for sealing, and the inner peripheral surface of the sealing platform surrounds the gas diffusion chamber.

22. A vapor deposition reactor, It is characterized in that It comprises the nozzle assembly as described in any one of claims 1 to 21, a thermal insulation pad combined with the upper surface of the gas distribution component, and a cooling plate combined with the upper surface of the thermal insulation pad.

23. The vapor deposition reactor according to claim 22, It is characterized in that The thermal insulation pad has a uniform thickness and fits tightly with the gas distribution component and the cooling plate.

24. The vapor deposition reactor according to claim 23, It is characterized in that The thickness of the thermal insulation pad ranges from 1 mm to 20 mm.

25. The vapor deposition reactor according to claim 24, It is characterized in that The thermal insulation pad is made of Teflon, high temperature ceramics, polymer foam, carbon fiber composite material or quartz.

26. The vapor deposition reactor according to claim 22, It is characterized in that The thermal insulation pad is a thermal insulation air pad, and the thermal insulation air pad has the same height at each position.

27. The vapor deposition reactor according to any one of claims 22 to 26, It is characterized in that The ratio of the thermal conductivity of the thermal insulation pad to its thickness satisfies κ / h=α / (ΔT·S), wherein κ represents the thermal conductivity of the material selected for the thermal insulation pad, h represents the thickness of the thermal insulation pad, α represents the thermal conductivity of the thermal insulation pad, ΔT represents the temperature difference between the sprinkler head and the cooling plate, and S represents the area of ​​the thermal insulation pad.

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