Particle radiation apparatus, method of operating same, method of determining processing point

Abstract

The invention relates to a method for operating a particle radiation apparatus. Furthermore, the invention relates to a further method for determining a processing point using a particle radiation device, to a computer program product and to a particle radiation device for carrying out at least one of these methods. The method comprises the following method steps: guiding the first particle beam to a position of the object by using the guiding unit; detecting interaction particles and / or interaction radiation using a detector; generating a detection signal; determining a thickness of the object based on the generated detection signal; determining a deviation of the determined thickness from a predefinable thickness value; adapting and / or determining a control parameter value of the control parameter in order to actuate the functional unit; actuating the functional unit with the adapted and / or determined control parameter value; the second particle beam is guided using the guide unit, and the object is processed using the second particle beam.

Description

Technical Field

[0001] The invention relates to a method for operating a particle radiation device. The invention also relates to a method for determining a treatment point using a particle radiation device. The invention also relates to a computer program product and a particle radiation device for carrying out at least one of the methods according to the invention. The particle radiation device is designed, for example, as an electron radiation device and / or an ion radiation device. Background Art

[0002] Electron radiation devices, in particular scanning electron microscopes (also referred to below as SEM) and / or transmission electron microscopes (also referred to below as TEM), are used to study objects (specimens) in order to gain insights into their properties and behavior under specific conditions.

[0003] In the case of SEM, an electron beam (hereinafter also referred to as a primary electron beam) is generated by means of a beam generator and is focused onto the object to be studied by a beam guidance system. The primary electron beam is guided in a scanning manner on the surface of the object to be studied by means of a deflection device. The electrons of the primary electron beam interact with the object to be studied. As a result of the interaction, electrons (so-called secondary electrons) are emitted from the object and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and backscattered electrons are detected and used to generate an image. Thus, an image of the object to be studied is obtained. In addition, as a result of the interaction, interaction radiation, such as X-ray radiation and cathode luminescence, is generated. The interaction radiation is particularly used for analyzing objects.

[0004] In the case of TEM, a primary electron beam is also generated by means of a beam generator and is focused onto the object to be studied by means of a beam guidance system. The primary electron beam transmits the object to be studied. When the primary electron beam passes through the object to be studied, the electrons of the primary electron beam interact with the material of the object to be studied. The electrons that penetrate the object to be studied are imaged on a light screen or on a detector (such as a camera) through a system consisting of an objective lens and a transmission lens (Project). Here, imaging can also be performed in the scanning mode of TEM. This type of TEM is generally referred to as STEM. It can also be proposed that backscattered electrons and / or secondary electrons emitted from the object to be studied are detected at the object to be studied by means of another detector in order to image the object to be studied.

[0005] In addition, it is known from the prior art that combined devices are used to study objects, in which not only electrons but also ions can be directed to the object to be studied. For example, it is known to additionally equip the SEM with an ion radiation column. Ions are generated by means of an ion beam generator arranged in the ion radiation column, which ions are used to prepare the object (for example, to grind the material of the object or to apply the material to the object) or also for imaging. The SEM is used in particular to observe the preparation process, but also for further studying the prepared or unprepared object.

[0006] In other known particle radiation devices, materials are applied to objects, for example, by supplying gas. The known particle radiation device is a combined device that provides an electron beam and an ion beam. The particle radiation device includes an electron radiation column and an ion radiation column. The electron radiation column provides an electron beam focused on the object. The object is arranged in a sample chamber that is kept in a vacuum. The ion radiation column provides an ion beam that is also focused on the object. With the help of the ion beam, for example, a layer on the surface of the object is removed. After removing this layer, the other surface of the object is exposed. With the help of a gas supply device, a gaseous precursor substance (so-called precursor) can be introduced into the sample chamber. It is known that the gas supply device is constructed with a needle-shaped device, which can be arranged very close to the position of a few microns from the object, so that the gaseous precursor substance can be guided to the position as accurately as possible and with a high concentration. Through the interaction of the ion beam and the gaseous precursor substance, a material layer is deposited on the surface of the object. For example, it is known that gaseous phenanthrene is introduced into the sample chamber as a gaseous precursor substance with the help of a gas supply device. Then, a carbon layer or a layer comprising carbon is substantially deposited on the surface of the object. It is also known to use a gaseous precursor substance with a metal to deposit a metal or a layer comprising a metal on the surface of the object. However, the deposit is not limited to carbon and / or metal. Rather, any substance may be deposited on the surface of the object, such as a semiconductor, a non-conductor or other compound. Furthermore, it is known that a gaseous precursor substance is used to abrade the material of the object when interacting with a particle beam.

[0007] Material is applied to the object and / or material is removed from the object, for example, in order to achieve a predefined thickness of the object.

[0008] In order to perform high-resolution analysis of the material structure of an object in a TEM or in a SEM with a transmission detector, it is known to prepare the object so that the thickness of the object is less than 100 nm, because in the transmission of electrons through the object, the electrons of the electron beam have a typical range of action of 1000 nm in solid materials. The electrons have an energy of typically from tens of keV to hundreds of keV when entering the object. The thickness of the object less than 100 nm ensures that the vast majority of the electrons pass through the object and can be detected by means of the detector.

[0009] It is known from the prior art to treat an object by means of an ion beam to achieve an object thickness of less than 100 nm, for example a thickness in the range of 1 nm to 80 nm or 1 nm to 50 nm, wherein the range limits are contained in the aforementioned ranges. The treatment of the object by means of an ion beam can be observed by imaging the object with an electron beam.

[0010] A method known from the prior art for producing an object to be examined with a TEM or with a SEM using a transmission detector is described below. First, in a material block, for example, with an extension size in the millimeter range, a sub-block of the material block (also referred to as a thin layer) is exposed and produced from the material block by using an ion beam. The sub-block has, for example, a thickness of a few micrometers (especially 3 μm to 6 μm) and a length of, for example, several tens of micrometers (especially 30 μm to 80 μm). The sub-block is then fastened to a micromanipulator and removed from the material block. The sub-block is then fastened to a TEM object holder (also referred to as a "TEM grid"). The material of the sub-block is now ground with the ion beam directed to the sub-block until the thickness of the sub-block or at least one region of the sub-block is less than 100 nm. When grinding material from the sub-block, the TEM object holder is first rotated 1° to 2° about the rotation axis in a first direction from an initial position in order to ensure good grinding of the material on the first side of the sub-block. Then, the TEM object holder is rotated 1° to 2° around the rotation axis in the second direction from the initial position in order to ensure good material removal on the second side of the sub-block. The first side and the second side of the sub-block are arranged opposite to each other and spaced apart. In order to enable the TEM object holder to rotate, the TEM object holder is arranged on a movably designed stage. The stage has a mechanical movement unit that can rotate the TEM object holder.

[0011] The determination of the thickness of a region of an object is known in the prior art. For this purpose, the object is arranged on a movable object holder. For example, a region is first exposed by a focused ion beam and the thickness of this region is then determined. For this purpose, the electron beam of the SEM is scanned over the exposed region. According to the above description, the SEM is used for imaging. Based on the image generated during imaging, the thickness of the region of the object is determined. This thickness determination can be carried out automatically.

[0012] When manufacturing thin layers, disturbances occurring during the manufacturing process of the thin layer and / or the properties of the material of the thin layer may lead to deviations in the processing of the thin layer. For example, a so-called curtain effect may occur. The curtain effect refers to an effect that may occur on a milled surface, which in particular results from a treatment using an ion beam. The curtain effect is caused by the spatial variation of the sputtering rate of the object and the regulation of the ion current density due to the forward scattering of the ions. The curtain effect conflicts with the uniformity of the surface of the thin layer. Additionally or alternatively, interferences may occur in the processing, resulting in a thin layer with an uneven surface. The material composition of the thin layer may also interfere with the manufacturing process of the thin layer.

[0013] According to the prior art, the disturbing influence of one or more of the above-mentioned effects can be reduced by so-called shaking of the object or so-called backside thinning. In the case of shaking, the object is moved together with the charged particles during the treatment so that the particles hit the object at different angles. In the case of backside thinning, material is removed from the back of the object so that a predeterminable thickness of the object is achieved without affecting the properties of the front side of the object.

[0014] With regard to the prior art, reference is made to US 8,536,525 B2, US 2007 / 0018099 A1, DE 10 2012 110 651 B4, US 8,816,303 B2 and DE 10 2010 024 625 A1.

[0015] In order to produce a thin layer whose thickness deviates as little as possible from one or more predefinable thicknesses, it may be necessary to carry out a large number of thin-layer processing steps and a large number of thickness measurement processes. Summary of the invention

[0016] The basic object of the present invention is to specify an additional method for operating a particle irradiation system, a computer program product and a particle irradiation system, with which objects having a predeterminable thickness can be produced easily, in particular automatically.

[0017] According to the invention, this object is achieved by a method for operating a particle irradiation device having the features described below. A further method for determining a treatment point using a particle irradiation device is also described below. A computer program product having a program code is described below, which is loaded or can be loaded into a processor and which, when executed, controls a particle irradiation device so as to perform the method according to the invention. The invention also relates to a particle irradiation device having the features described below. Further features of the invention are apparent from the following description and / or the drawings.

[0018] The method according to the present invention is used to operate a particle radiation device to determine the thickness of an object, wherein the method according to the present invention mainly involves adapting and / or determining control parameter values ​​of the particle radiation device and processing the object by means of a first particle beam and / or a second particle beam. For example, the particle radiation device has at least one first beam generator for generating a first particle beam with first charged particles; and has at least one second beam generator for generating a second particle beam with second charged particles. The first charged particles are, for example, electrons or ions. In addition, the second charged particles are, for example, ions or electrons.

[0019] The method according to the present invention has method steps, which will be described in detail below.

[0020] The method according to the invention comprises: guiding a first particle beam of the particle radiation device to at least one predeterminable first position on a first surface of an object using at least one guiding unit of the particle radiation device. In this case, the particle radiation device has at least a first beam generator for generating a first particle beam. The first particle beam has first charged particles. In addition, the particle radiation device also has at least a second beam generator for generating a second particle beam, wherein the second particle beam has second charged particles.

[0021] It is to be noted that the first surface of the object may be formed by any surface of the object.

[0022] A guiding unit is understood to be any unit for guiding, for example, a first particle beam and / or, for example, a second particle beam onto an object, but is also understood to be any unit for shaping, for example, a first particle beam and / or, for example, a second particle beam, which is then guided to the object. The guiding unit is designed, for example, as an objective lens for focusing, for example, a first particle beam and / or, for example, a second particle beam onto an object, an electrostatic and / or magnetic unit for beam shaping or beam guiding, an stigmator, a converging lens and / or a mechanically adjustable baffle unit, by which the first particle beam and / or the second particle beam is limited. In particular, a radiation column of a particle radiation device is also understood to be a guiding unit.

[0023] The method according to the invention further comprises detecting interaction particles and / or interaction radiation using a detector of the particle radiation device, wherein the interaction particles and / or interaction radiation originate from an interaction between the first particle beam and the object when the first particle beam hits at least one predeterminable first position on a first surface of the object.

[0024] Furthermore, in the method according to the invention a detector is used for generating a detection signal based on detected interacting particles and / or detected interacting radiation.

[0025] In this case, the detection signal may, for example, be related to the number of detected interacting particles, for example to the intensity of the detected interacting radiation, for example to the energy of the detected interacting particles and / or the detected interacting radiation, for example to the spatial distribution of the detected interacting particles and / or the detected interacting radiation, for example to the spectral distribution of the detected interacting radiation, for example to the energy distribution of the detected interacting particles and / or for example to the phase information of the detected interacting radiation.

[0026] The method according to the invention further comprises: determining the thickness of the object at at least one predeterminable first position on the first surface of the object based on the generated detection signal. The thickness is determined using a control unit of the particle radiation device. In this case, the thickness of the object is given by the length of a connecting straight line, wherein the connecting straight line connects at least one predeterminable first position on the first surface of the object with a second position on the second surface of the object. For example, the thickness is given by the minimum possible distance between a predeterminable first position on the first surface of the object and a second position on the second surface of the object. It should be noted that the thickness is not in principle given by the minimum possible distance between a predeterminable first position on the first surface of the object and any second position on the second surface of the object. Instead, the second position on the second surface of the object can be derived from the relative positioning relative to the predeterminable first position on the first surface of the object. For example, the second position on the second surface of the object is derived from the predeterminable first position on the first surface of the object, so that the second position on the second surface of the object is located at the intersection of the auxiliary line and the second surface of the object. In this case, the auxiliary line is formed, for example, by a first position on the first surface of the object perpendicular to the auxiliary plane and passing through the auxiliary plane, wherein the auxiliary plane is given by the first surface of the object. However, the auxiliary plane can also be formed, for example, by a surface to be obtained by a processing process of the object. In other words, the thickness is given by the material thickness of the object at at least one predeterminable first location on a first surface of the object.

[0027] The control unit of the particle radiation device is used in particular to control and / or set at least one functional unit of the particle radiation device. A functional unit is understood above and below as a structural unit of the particle radiation device that can be set in some way. For example, the position of the functional unit in the particle radiation device can be set. The functional unit can be designed in particular as a movably designed carrier. Additionally or alternatively, it is proposed that the construction of the functional unit is set to electrostatic and / or magnetic. The present invention is not limited to the above-mentioned setting possibilities. Instead, the functional unit can be set in any way suitable for the present invention. In particular, the guiding unit already described is designed as a functional unit.

[0028] Furthermore, in the method according to the invention, a deviation of the determined thickness of the object from a pre-given thickness value of the object is determined at at least one pre-given first position on the first surface of the object. For example, the deviation is determined using a control unit. The deviation of the determined thickness of the object from a pre-given thickness value is understood as the difference between the determined thickness of the object and a pre-given thickness value. In other words, the deviation of the determined thickness of the object from a pre-given thickness value refers to a distance calculated from the difference between the determined thickness and the pre-given thickness value. In other words, an object having a thickness of a pre-given thickness value can be achieved by grinding or applying a material having a thickness of the distance at at least one pre-given first position on the first surface of the object to achieve a pre-given thickness value.

[0029] In other words, the deviation is determined at the at least one first predeterminable position on the first surface of the object. If, for example, the deviation exceeds a predeterminable value, the deviation can be used, for example, to determine whether further processing is to be performed at a second position on the first surface of the object. Whether material is to be removed or applied at the at least one second predeterminable position on the first surface of the object for further processing is determined by the sign of the above-mentioned difference between the determined thickness and the predeterminable thickness value. The first position on the first surface of the object can be different from the second position on the first surface of the object. Alternatively, the first position on the first surface of the object is identical to the second position on the first surface of the object.

[0030] In this case, the predeterminable thickness value is selected, for example, from a first range of 1 nm to 100 nm, preferably from a second range between 1 nm and 80 nm, further preferably from a third range between 1 nm and 50 nm, wherein the range limits are contained in the above ranges.

[0031] The method according to the present invention further comprises: using a control unit to adapt and / or determine at least one control parameter value of at least one control parameter according to the determined deviation to control a functional unit of the particle radiation device, wherein the functional unit affects at least one pre-determinable characteristic of the particle radiation device related to the second particle beam. For example, the control parameter can be designed as a current flowing through the coil of the particle radiation device, so that the first charged particles and / or the second charged particles are focused or defocused by the coil. In addition, the control parameter can also be designed, for example, as a voltage for accelerating and / or decelerating the first charged particles and / or the second charged particles. In addition, the control parameter can also be designed, for example, as a voltage for deflecting the first charged particles and / or the second charged particles. In addition, the control parameter can also be designed, for example, as a signal for controlling a movably designed stage. The present invention is not limited to the above examples of control parameters. Instead, in the present invention, any control parameter suitable for the present invention can be used to control the functional unit of the particle radiation device.

[0032] For example, if the determined deviation indicates that further processing is required and if the difference between the determined thickness and the predeterminable thickness value is greater than zero, i.e. if the determined thickness is greater than the predeterminable thickness value, material should be removed at at least one second predeterminable position on the first surface of the object. For example, if the determined deviation indicates that further processing is required and the difference between the determined thickness and the predeterminable thickness value is less than zero, i.e. if the determined thickness is less than the predeterminable thickness value, material should be applied at at least one second predeterminable position on the first surface of the object. The control parameter value of at least one control parameter is adapted according to the desired removal / application.

[0033] Determining at least one control parameter value is understood to mean that a value is input into a control unit of the particle radiation system by a user of the particle radiation system, for example.

[0034] Furthermore, in the method according to the invention, a control unit is used to actuate the functional unit with an adapted at least one control parameter value of a control parameter and / or a determined at least one control parameter value of a control parameter, so that at least one predeterminable property of the particle radiation system related to the second particle beam is influenced by the functional unit.

[0035] The method according to the invention further comprises: guiding a second particle beam of the particle radiation device to at least one second predeterminable position on the first surface of the object using at least one guiding unit of the particle radiation device, and treating the object at at least one second predeterminable position on the first surface of the object using the second particle beam. The object can be treated using the second particle beam, for example, by removing or applying material at at least one second predeterminable position on the first surface of the object.

[0036] As described above, at least one predeterminable second position on the first surface of the object may deviate from at least one predeterminable first position on the first surface of the object. For example, the distance between at least one predeterminable second position on the first surface of the object and at least one predeterminable first position on the first surface of the object is at most 500 nm, in particular at most 250 nm, and further in particular at most 100 nm. For example, the distance between at least one predeterminable second position on the first surface of the object and at least one predeterminable first position on the first surface of the object may be caused by the difference in angles at which the first particle beam and the second particle beam hit the first surface of the object. As explained above, in one embodiment of the method according to the invention, the first predeterminable position on the first surface of the object and the second predeterminable position on the first surface of the object may be the same.

[0037] The above-described method steps which constitute the present method are also referred to in their entirety below as basic method.

[0038] The invention has the advantage that, in particular, the determination of the thickness of an object, the adaptation and / or determination of control parameter values ​​of a particle radiation device and the treatment of the object can be easily realized. The determination of the thickness of an object, the adaptation and / or determination of control parameter values ​​of a particle radiation device and the treatment of the object can in particular be carried out automatically.

[0039] In one embodiment of the method according to the invention, it is additionally or alternatively provided that electrons or ions are used as first charged particles. Additionally or alternatively, electrons or ions are used as second charged particles.

[0040] In another embodiment of the method according to the invention, it is additionally or alternatively proposed to repeat the method steps. For example, the method according to the invention comprises the following method steps:

[0041] - directing a first particle beam of the particle radiation system to at least one predeterminable first position on a first surface of the object using at least one guiding unit of the particle radiation system;

[0042] - detecting the interacting particles and / or the interacting radiation by means of a detector of the particle radiation device;

[0043] - generating a detection signal based on the detected interacting particles and / or the detected interacting radiation using a detector;

[0044] - determining the thickness of the object at at least one predeterminable first position on a first surface of the object based on the generated detection signal using a control unit of the particle radiation device;

[0045] - determining a deviation of the determined thickness of the object from a predefinable value of the thickness of the object at at least one predefinable first position on a first surface of the object; and

[0046] -Perform the following method steps:

[0047] a. using a control unit to adapt and / or determine at least one control parameter value of at least one control parameter according to the determined deviation to control a functional unit of the particle radiation device (for example, in this method step, the control parameter value is set to a first value);

[0048] b. using the control unit to control the functional unit with the adapted at least one control parameter value of the control parameter and / or the determined at least one control parameter value of the control parameter, so that at least one predeterminable property of the particle radiation device related to the second particle beam is influenced by the functional unit;

[0049] c. guiding a second particle beam of the particle radiation device to at least one second predeterminable position on the first surface of the object using at least one guiding unit of the particle radiation device, and treating the object at at least one second predeterminable position on the first surface of the object using the second particle beam;

[0050] - redirecting the first particle beam of the particle radiation system to at least one predeterminable first position on the first surface of the object using at least one guiding unit of the particle radiation system;

[0051] - detecting further interacting particles and / or further interacting radiation by means of a detector of the particle radiation device;

[0052] - generating, using the detector, a further detection signal based on the detected further interacting particles and / or the detected further interacting radiation;

[0053] - determining a further thickness of the object at at least one predeterminable first position on the first surface of the object based on the generated further detection signal using the control unit of the particle radiation system;

[0054] - determining a further deviation of the determined further thickness of the object from a predefinable further thickness value of the object at at least one predefinable first position on the first surface of the object; and

[0055] -Perform the following method steps:

[0056] aa. using a control unit to adapt and / or determine at least one further control parameter value of at least one further control parameter in accordance with the determined further deviation in order to control a functional unit of the particle radiation device, wherein at least one control parameter can correspond to at least one further control parameter (for example in this method step, the control parameter value which was set to a first value in method step a is set to a second value during method step aa, wherein the first value and the second value can be different);

[0057] bb. using the control unit to control the functional unit with at least one adapted further control parameter value of the further control parameter (e.g. now adapted to the second value) and / or with at least one determined further control parameter value of the further control parameter (e.g. now set to the second value), so that at least one predeterminable property of the particle radiation device related to the second particle beam is influenced by the functional unit;

[0058] cc. using at least one guiding unit of the particle radiation device to guide a second particle beam of the particle radiation device to at least one second predeterminable position on the first surface of the object, and treating the object at at least one second predeterminable position on the first surface of the object using the second particle beam. With regard to treating the object at at least one second predeterminable position on the first surface of the object using the second particle beam, reference is made to the embodiments described earlier above, which describe treating the object using the second particle beam.

[0059] In the method according to the invention, the predefinable additional thickness value is in particular different from the predefinable thickness value. In the previously described embodiment, as described above, the basic method is thus carried out at least once more, wherein the predefinable thickness value is replaced by the predefinable additional thickness value. In this regard, it is provided, for example, that the thickness of the object gradually approaches the target thickness in the above-described manner. Therefore, the previously described embodiment includes an iterative method.

[0060] In this case, the target thickness is selected, for example, from a first range of 1 nm to 100 nm, preferably from a second range of 1 nm and 80 nm, further preferably from a third range of 1 nm and 50 nm, wherein the range limits are included in the above ranges.

[0061] In this case, the method according to the invention is not limited to the above-mentioned two repetitions of all method steps of the basic method. Rather, in another embodiment of the method according to the invention, it is proposed that the basic method is repeated with any frequency using adapted further thickness values. In this case, for example, the number of repetitions can depend on the thickness of the object, the target thickness and / or the treatment of the object with the second particle beam. In particular, the basic method can be repeated until the thickness of the object corresponds to the target thickness.

[0062] Repeating the basic method with different predefinable thickness values ​​makes it possible in particular to avoid large deviations in amount between the predefinable thickness value and the determined thickness of the object. This makes it possible to handle the object in a particularly protective manner, since the amount of material removed or applied during the method is limited and in particular must not exceed a predefinable maximum value.

[0063] In this case, the aforementioned embodiments of the method according to the invention are not limited to the above-mentioned order of the method steps. Various orders of the method steps can be envisaged, which are suitable for achieving the purpose of the invention in the sense of the invention. Alternatively or additionally, in the method according to the invention, at least two method steps can also be implemented in parallel. In addition, the aforementioned embodiments of the method according to the invention are also not limited to the full scope of all the above-mentioned method steps. In particular, it is conceivable that in other embodiments, individual or several method steps in the method steps above or below are omitted. For example, in another operation of the basic method, the re-determination of the thickness of the object can be omitted, thereby also omitting the re-determination of the deviation. In this case, the adaptation and / or determination of other control parameter values ​​can be cancelled. Then, the functional unit can be controlled again with the control parameter value adapted in the previous operation and / or the control parameter value determined in the previous operation. This can be advantageous in the following case: for example, the deviation determined at the beginning has a relatively high value in terms of amount and therefore multiple processing steps are connected in series without checking the thickness of the object during this period.

[0064] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that, as a further method step, the use of data to calculate the control parameter value and / or the control parameter value is directly loaded into the control unit as a control parameter from a database. In this case, the data for calculating the control parameter value can be data stored on a storage unit. In this case, the storage unit is designed, for example, as a data carrier with a database. However, these data can also be obtained by determination and / or calculation from the process parameters and / or measurement parameters of the method. The database is used to store the determined and / or calculated data, such as the control parameter value.

[0065] In the above-mentioned embodiments of the method according to the invention, it can be proposed additionally or alternatively that, as a further method step, the use of data to calculate further control parameter values ​​and / or to load further control parameter values ​​directly into the control unit as further control parameters is implemented. In this case, the data for calculating the further control parameter values ​​can be data stored on a storage unit. In this case, the storage unit is designed, for example, as a data carrier with a database. However, these data can also be derived from the process parameters and / or measurement parameters of the method by determination and / or calculation. The database is used to store the determined and / or calculated data, such as control parameter values ​​and / or further control parameter values.

[0066] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the processing of the object comprises one of the following method steps:

[0067] - removing and / or depositing material of the object at at least one predeterminable second position on the first surface of the object using the particle radiation device if the deviation determined at at least one predeterminable first position on the first surface of the object is greater in amount than a predeterminable threshold value;

[0068] - if the deviation determined at at least one predeterminable first position on the first surface of the object is less than a predeterminable threshold value in amount, no further material is removed and / or deposited using the particle radiation device at at least one predeterminable second position on the first surface of the object.

[0069] In this case, the threshold value can be predetermined, for example by inputting the threshold value by a user and / or calling up the threshold value from a database. The aforementioned database corresponds, for example, to the database explained earlier above. Alternatively, the aforementioned database is different from the aforementioned database. The threshold value can also come from a calculation, for example based on process parameters and / or measurement parameters. Thus, the threshold value can represent a quantitative deviation between the thickness of the object determined at at least one first predeterminable position on the first surface of the object and a predeterminable thickness value of the object, wherein the quantitative deviation corresponds to a sufficient processing quality at at least one second predeterminable position on the first surface of the object, so that no further processing is performed there.

[0070] Removing material using the particle radiation device can be performed, for example, by treating the object with the second particle beam, in particular using ions as particles. Additionally or alternatively, as described above, material of the object can be removed using the first particle beam and / or the second particle beam using gaseous precursor substances.

[0071] As described above, material deposition using a particle radiation device can be achieved in particular by treating the object with a gaseous precursor substance together with the first particle beam and / or the second particle beam.Deposition is essentially the application of material to an object.

[0072] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the threshold value is stored in a further database and / or is loaded into the control unit from a further database. In this case, the further database can be designed differently from the database explained earlier above. Alternatively, the further database can correspond, for example, to one of the databases mentioned earlier above.

[0073] In yet another embodiment of the method according to the invention, it is proposed additionally or alternatively that the basic method described above is followed by further method steps. For example, the method according to the invention is repeated at at least one further predeterminable first position on the first surface of the object and at another predeterminable second position on the first surface of the object. In this case, the at least one further predeterminable first position on the first surface of the object may be different from the at least one predeterminable first position on the first surface of the object, and the at least one further predeterminable second position on the first surface of the object may be different from the at least one predeterminable second position on the first surface of the object. The at least one further predeterminable first position on the first surface of the object and the at least one further predeterminable second position on the first surface of the object may be different or identical. The method then comprises in particular the following method steps:

[0074] - directing a first particle beam of the particle radiation system to at least one predeterminable first position on a first surface of the object using at least one guiding unit of the particle radiation system;

[0075] - detecting the interacting particles and / or the interacting radiation by means of a detector of the particle radiation device;

[0076] - generating a detection signal based on the detected interacting particles and / or the detected interacting radiation using a detector;

[0077] - determining the thickness of the object at at least one predeterminable first position on a first surface of the object based on the generated detection signal using a control unit of the particle radiation device;

[0078] - determining a deviation of the determined thickness of the object from a predefinable value of the thickness of the object at at least one predefinable first position on a first surface of the object; and

[0079] -Perform the following method steps:

[0080] a. using a control unit to adapt and / or determine at least one control parameter value of at least one control parameter according to the determined deviation to control a functional unit of the particle radiation device (for example, in this method step, the control parameter value is set to a third value);

[0081] b. using the control unit to control the functional unit with the adapted at least one control parameter value of the control parameter and / or the determined at least one control parameter value of the control parameter, so that at least one predeterminable property of the particle radiation device related to the second particle beam is influenced by the functional unit;

[0082] c. guiding a second particle beam of the particle radiation device to at least one second predeterminable position on the first surface of the object using at least one guiding unit of the particle radiation device, and treating the object at at least one second predeterminable position on the first surface of the object using the second particle beam. With regard to treating the object at at least one second predeterminable position on the first surface of the object, reference is made to the embodiments described further above, which also apply here;

[0083] directing a first particle beam of the particle radiation system to at least one further predeterminable first position on the first surface of the object using at least one guiding unit of the particle radiation system;

[0084] - detecting further interacting particles and / or further interacting radiation by a detector of the particle radiation device;

[0085] - generating, using the detector, a further detection signal based on the detected further interacting particles and / or the detected further interacting radiation;

[0086] - determining a further thickness of the object at at least one further predeterminable first position on the first surface of the object based on the generated further detection signal using the control unit of the particle radiation device;

[0087] - determining a further deviation of the determined further thickness of the object from a further predefinable thickness value of the object at at least one further predefinable first position on the first surface of the object; and

[0088] -Perform the following method steps:

[0089] aa. using the control unit to adapt and / or determine at least one further control parameter value of at least one further control parameter according to the determined further deviation in order to control a functional unit of the particle radiation device, wherein at least one control parameter can correspond to at least one further control parameter (for example in this method step, the control parameter value which was set to the third value in method step a is set to a fourth value during method step aa, wherein the third value and the fourth value can be different);

[0090] bb. using the control unit to control the functional unit with the adapted at least one further control parameter value of the further control parameter and / or the determined at least one further control parameter value of the further control parameter, so that at least one predeterminable property of the particle radiation device related to the second particle beam is influenced by the functional unit;

[0091] cc. using at least one guiding unit of the particle radiation device to guide a second particle beam of the particle radiation device to at least one further predeterminable second position on the first surface of the object, and treating the object at the at least one further predeterminable second position on the first surface of the object using the second particle beam. With regard to the treatment, reference is made to the embodiments described further above, which also apply here.

[0092] In this case, the predefinable further thickness value can correspond to the predefinable thickness value, for example. Alternatively, according to one of the above-described embodiments of the method according to the invention, the predefinable further thickness value can differ from the predefinable thickness value.

[0093] In this case, yet further thickness values ​​are selected, for example, from a first range of 1 nm to 100 nm, preferably from a second range of between 1 nm and 80 nm, further preferably from a third range of between 1 nm and 50 nm, wherein the range limits are contained in the abovementioned ranges.

[0094] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that at least one further predeterminable first position on the first surface of the object corresponds to at least one predeterminable first position on the first surface of the object, and at least one further predeterminable second position on the first surface of the object corresponds to at least one predeterminable second position on the first surface of the object. In other words, the same position is processed multiple times. In contrast to the above-described embodiment of the method according to the invention, this further embodiment may not be adapted to thickness values, for example.

[0095] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the predeterminable thickness value is the same for all first positions on the first surface of the object. In other words, the object manufactured by the method according to the invention has a uniform thickness. In yet another way, the object manufactured by the method according to the invention is manufactured to have a flat surface. In yet another way, the thickness of the object manufactured by the method according to the invention at at least one predeterminable first position on the first surface of the object corresponds to the thickness of the object at at least one other predeterminable first position on the first surface of the object.

[0096] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed to extend the method according to the invention by a measuring step. For example, the thickness can be determined again after the object has been processed by means of the measuring step. In this case, the measuring step consists of a plurality of method steps. The method steps of the measuring step are as follows:

[0097] - redirecting the first particle beam of the particle irradiation device to at least one predeterminable first position on the first surface of the object using at least one guiding unit;

[0098] - detecting further interacting particles and / or further interacting radiation using a detector of the particle radiation device, wherein the further interacting particles and / or the further interacting radiation originate from an interaction of the first particle beam with the object when the first particle beam impinges on at least one predeterminable first location on a first surface of the object;

[0099] - generating, using the detector, a further detection signal based on the detected further interacting particles and / or the detected further interacting radiation;

[0100] - determining a further thickness of the object at at least one predeterminable first position on the first surface of the object based on the generated further detection signal.

[0101] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that at at least one predeterminable first position on a first surface of the object, the thickness of the object is determined using a dependency between the detection signal and the thickness of the object. In other words, there is a dependency between the detection signal and the thickness of the object, wherein the dependency can be used to determine the thickness of the object.

[0102] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that when determining the thickness of the object using the dependency between the detection signal and the thickness of the object, at least one of the following properties is taken into account:

[0103] - object material at at least one predefinable first location on a first surface of the object;

[0104] - at least one further object material at an interior location within the object reached by the first charged particles of the first particle beam;

[0105] - a surface structure at at least one predefinable first position on a first surface of the object;

[0106] a shape of the first particle beam at at least one predeterminable first position on a first surface of the object;

[0107] - a size of the first particle beam at at least one first predefinable position on a first surface of the object;

[0108] - an intensity of the first particle beam at at least one predeterminable first location on a first surface of the object;

[0109] The landing energy of the first particle beam at at least one predeterminable first position on the first surface of the object.

[0110] In this case, the internal position refers to a position which is arranged, for example, inside the object. The internal position is particularly arranged close to the at least one predeterminable first position so that the first particle beam and / or the second particle beam first passes through the predeterminable first position and then through the internal position.

[0111] The surface structure can be given, for example, by the roughness of the surface of the object. For example, it may also occur that the surface structure is partially or completely formed by yet another material, which is only located at certain locations on the surface of the object and therefore does not cover the surface.

[0112] The shape of the first particle beam refers, for example, to the shape of the first particle beam when it hits the object. The shape of the first particle beam can be influenced by the above-mentioned guiding unit of the particle radiation device, i.e., for example, by an electrostatic and / or magnetic unit for beam shaping or beam guiding, by an objective lens, an stigmator, a converging lens and / or a mechanically adjustable baffle unit.

[0113] The size of the first particle beam can, for example, also be influenced by the above-mentioned guidance units of the particle radiation device, i.e., for example, by electrostatic and / or magnetic units for beam shaping or beam guidance, by objectives, stigmators, converging lenses and / or mechanically adjustable baffle units.

[0114] The intensity of the first particle beam refers to, for example, the number of charged particles reaching a certain area on the object within a certain period of time. In other words, the intensity of the first particle beam refers to the current generated by the first particle beam in a specific area on the object.

[0115] Landing energy refers to the kinetic energy carried by a single charged particle, such as the first charged particle, when it hits an object.

[0116] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the thickness is determined in the following manner: the thickness of the object is determined by comparing the detection signal by means of a mapping of the detection signal to the thickness of the object that can be predetermined. In other words, the thickness of the object is determined in the following manner: the detection signal is compared by means of a mapping of the detection signal to the thickness of the object that can be predetermined. If the detection signal corresponds to the pre-given detection signal, the thickness of the object corresponds to the thickness mapped to the pre-given detection signal. In this case, the mapping of the pre-given detection signal to the thickness of the object can be stored in a database. The mapping of the pre-given detection signal to the thickness of the object can also come from a calculation.

[0117] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that a detection signal is generated based on the detected interacting particles and / or the detected interacting radiation. In this case, the detected interacting particles are formed by at least one of the following means:

[0118] - transmitted electrons detected using a detector;

[0119] - reflected electrons detected using a detector;

[0120] - secondary particles detected using detectors, in particular secondary electrons;

[0121] - Backscattered particles, especially backscattered electrons, detected using a detector.

[0122] Additionally or alternatively, the detected interaction radiation is formed by at least one of the following radiation types:

[0123] - X-ray radiation detected using a detector; and

[0124] - Cathodoluminescence detected using a detector.

[0125] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that first charged particles of a first particle beam of the particle irradiation device and / or second charged particles of a second particle beam of the particle irradiation device are transmitted through the object.

[0126] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that a first surface of the object facing the second particle beam encloses an angle of 0° to 90° with the second particle beam of the particle irradiation device directed to at least one predeterminable second position on the first surface of the object, wherein this is achieved by carrying out at least one of the following method steps:

[0127] - rotating a movable object holder from an initial position in a first rotation direction about a first rotation axis, wherein the object is arranged on the movable object holder;

[0128] - rotating at least one guide unit of the particle radiation device in a second rotational direction about a second rotational axis;

[0129] Using the control unit to actuate the functional unit with an adapted deflection parameter value of the deflection parameter, such that the second particle beam impinges on at least one second predefinable position on the first surface of the object from a predefinable direction.

[0130] The range limits of the above 0° to 90° range are included in the above range.

[0131] In one possible embodiment of the method according to the invention, the control parameter and / or the further control parameter is designed as a deflection parameter.

[0132] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that a first surface of the object facing the second particle beam encloses an angle of 0° to −90° with the second particle beam of the particle irradiation device directed to at least one predeterminable second position on the first surface of the object, wherein this is achieved by carrying out at least one of the following method steps:

[0133] - rotating the movable object holder from an initial position in a third rotational direction about the first rotational axis, wherein the third rotational direction is opposite to the first rotational direction;

[0134] - rotating at least one guide unit of the particle radiation device about the second rotation axis in a fourth rotation direction, wherein the fourth rotation direction is opposite to the second rotation direction;

[0135] Using the control unit to actuate the functional unit with an adapted deflection parameter value of the deflection parameter, such that the second particle beam impinges on at least one second predefinable position on the first surface of the object from a predefinable direction.

[0136] The range limits of the above 0° to -90° range are included in the above range.

[0137] In yet another embodiment of the method according to the invention, it is provided additionally or alternatively thereto that the first axis of rotation corresponds to the second axis of rotation.

[0138] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the deflection parameter values ​​are stored in a further database and / or retrieved from a further database, i.e., loaded into the control unit, for example. In this case, the further database can, for example, correspond to one of the databases already mentioned above.

[0139] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the functional unit influences at least one of the following properties of the second particle beam:

[0140] a shape of the second particle beam at at least one second predefinable position on the first surface of the object;

[0141] a size of the second particle beam at at least one second predefinable position on the first surface of the object;

[0142] - an intensity of the second particle beam at at least one second predefinable position on the first surface of the object;

[0143] - a landing energy of the second particle beam at at least one second predefinable position on the first surface of the object;

[0144] - deflecting the second particle beam in the direction in which the second particle beam is directed;

[0145] a dwell time of the second particle beam at at least one second predefinable position on the first surface of the object;

[0146] - distances between object points on the first surface of the object, at which the second particle beam is guided using at least one guiding unit of the particle radiation device;

[0147] - a further dwell time of the second particle beam at the object point on the first surface of the object; and

[0148] - controlling parameters of a scanner device, wherein the scanner device is used to direct the second particle beam onto an object point on the first surface of the object.

[0149] Regarding the shape of the second particle beam, the size of the second particle beam, the intensity of the second particle beam and the landing energy of the second particle beam, reference is made to the embodiments regarding the shape of the first particle beam, the size of the first particle beam, the intensity of the first particle beam and the landing energy of the first particle beam, and these embodiments also apply analogously here.

[0150] The dwell time refers, for example, to the length of time during which the second particle beam resides at at least one predefinable second position on the first surface of the object.

[0151] The distance between object points (also referred to as pixel pitch) indicates the degree of spacing between object points on the first surface of the object. In this case, object points are points on the first surface of the object to which the second particle beam is guided using at least one guidance unit. The distance can be formed, for example, by the distance between a predeterminable second position on the first surface of the object and a further predeterminable second position on the first surface of the object.

[0152] The further dwell time is, for example, the time during which the second particle beam resides at the object point.

[0153] Parameters for controlling the scanner device are other parameters which, according to the present invention, are suitable for controlling the functional unit in order to direct the second particle beam to an object point on the first surface of the object so that the object can be processed according to the present invention. According to the present invention, a scanner device is understood to be one of the at least one functional units of a particle radiation device. The parameters for controlling the scanner device can, for example, relate to the duration between two consecutive processing of an object point. Furthermore, the parameters for controlling the scanner device can also, for example, relate to the processing sequence of the object points.

[0154] All interacting particles already mentioned earlier above or to be mentioned further below are, for example, secondary particles (especially secondary electrons or secondary ions) and / or backscattered particles (for example backscattered electrons). Interactive radiation already mentioned earlier above or to be mentioned further below is, for example, X-ray radiation and / or cathode luminescence.

[0155] All embodiments of the method according to the invention are not restricted to the above-mentioned order of the method steps. Instead, any order of the method steps can be used, which is suitable for achieving the object of the invention in the sense of the invention. Alternatively or additionally, it is also proposed that at least two method steps are carried out in parallel. Alternatively or additionally, it is also proposed that individual method steps are omitted.

[0156] The present invention also relates to another method for determining a treatment point on a first surface of an object using a particle radiation device. The particle radiation device has at least one first beam generator for generating a first particle beam, wherein the first particle beam has first charged particles. In addition, the particle radiation device also has at least one second beam generator for generating a second particle beam, wherein the second particle beam has second charged particles. The other method according to the present invention includes using the second particle beam to treat the object in the specific manner of guiding the second particle beam to a certain part of the object. For this purpose, for example, at least one guiding unit can be used to guide the second particle beam to the part. It should be noted that the part can be located on any surface of the object.

[0157] A further method according to the invention has the following method steps.

[0158] A further method according to the invention comprises: guiding a first particle beam of the particle radiation device to at least one predeterminable first position on a first surface of the object using at least one guiding unit of the particle radiation device. With regard to the particle radiation device and the guiding unit, reference is made to the above earlier and following embodiments, which also apply here. It should be noted that the predeterminable first position on the first surface of the object may be different from and / or identical to a location of the object.

[0159] A further method according to the invention also comprises detecting interaction particles and / or interaction radiation using a detector of a particle radiation device, wherein the interaction particles and / or interaction radiation originate from an interaction between the first particle beam and the object when the first particle beam hits at least one predeterminable first position on a first surface of the object.

[0160] Furthermore, in a further method according to the invention a detector is used to generate a detection signal based on the detected interacting particles and / or the detected interacting radiation.

[0161] With regard to detectors, detection signals, interacting particles and interacting radiation, reference is made to the earlier and following embodiments above, which also apply here.

[0162] A further method according to the invention also comprises determining the thickness of the object at at least one first predeterminable position on a first surface of the object based on the generated detection signal. The thickness is determined using a control unit of the particle radiation device. In this case, the thickness of the object is given by the length of a connecting straight line, wherein the connecting straight line connects the at least one first predeterminable position on the first surface of the object with a second position on the second surface of the object.

[0163] With regard to the thickness of the object, the control unit, the connecting straight line and the second position on the second surface of the object, reference is made to the above earlier and following embodiments, which also apply here.

[0164] Furthermore, in a further method according to the invention, at least one first predeterminable position on the first surface of the object is determined as a treatment point if the determined thickness deviates from a predeterminable thickness value. In other words, at least one first predeterminable position on the first surface of the object can be identified as a treatment point if the value resulting from the determination of the thickness of the object at at least one first predeterminable position on the first surface of the object indicates that the thickness has changed. This change may occur, for example, as a result of treating the object with a second particle beam when the second particle beam is directed to a location on the object. In yet other words, a treatment point is a position on the first surface of the object whose thickness has changed. In other words, a treatment point is a treated position on the first surface of the object.

[0165] In another embodiment of the further method according to the invention, it is additionally or alternatively provided that the thickness of the object is determined using a control unit of the particle radiation system by comparing the generated detection signals of the process parameters and / or the measurement parameters with values ​​of a database, wherein the aforementioned database corresponds, for example, to the database explained earlier above. Additionally or alternatively, calculations can also be performed by a processor of the particle radiation system based on the generated detection signals, the process parameters and / or the measurement parameters.

[0166] In yet another embodiment of the further method according to the invention, it is additionally or alternatively proposed that the predeterminable thickness value is obtained by calling up a thickness value from another database. Additionally or alternatively, the predeterminable thickness value can also be obtained by a user of the particle radiation device inputting it into a control unit of the particle radiation device.

[0167] In this case, the further database may, for example, correspond to the database.

[0168] The invention further relates to a computer program product having a program code, which can be loaded into or is loaded into a processor of a particle radiation device, wherein the program code, when executed in the processor, controls the particle radiation device so that a method having at least one of the above or following features or a method having a combination of at least two of the above or following features is implemented.

[0169] The invention also relates to a particle radiation device for imaging, processing and / or analyzing an object, wherein the particle radiation device has already been described above and will be explicitly described below. This will be briefly summarized below. The particle radiation device according to the invention has at least one first beam generator for generating a first particle beam with first charged particles. The first charged particles are, for example, electrons or ions. The particle radiation device according to the invention has at least one second beam generator for generating a second particle beam with second charged particles. The second charged particles are, for example, ions or electrons. In addition, the particle radiation device also has at least one functional unit. A functional unit is understood above and below as a structural unit of the particle radiation device that can be set in a certain way. The functional unit affects at least one predeterminable characteristic of the particle radiation device. For example, the position of the functional unit in the particle radiation device can be set. In addition or alternatively, it is proposed that the functional unit can be designed as electrostatic and / or magnetic. The construction mode of the functional unit can be set as electrostatic and / or magnetic. The invention is not limited to the above-mentioned setting possibilities. Instead, the functional unit can be set in any way suitable for the invention.

[0170] In addition, the particle radiation device according to the present invention also has at least one control unit for controlling the functional unit and determining the thickness of the object. In addition, the particle radiation device according to the present invention also has at least one guiding unit for guiding the first particle beam and / or the second particle beam to the object. Additionally or alternatively, the guiding unit is also designed to focus the first particle beam and / or the second particle beam. For example, the guiding unit is designed as a functional unit. In addition, the particle radiation device according to the present invention also has at least one detector for detecting interaction particles and / or interaction radiation, which is generated by the interaction of the first particle beam and / or the second particle beam with the object when the first particle beam and / or the second particle beam hits the object. In addition, the particle radiation device according to the present invention is also provided with at least one display unit for displaying an image of the object and / or displaying data about the object, wherein the image and / or display is generated based on the detection signal generated by the detected interaction particles and / or the detected interaction radiation. In addition, the particle radiation device according to the present invention also has a processor, in which a computer program product having the features mentioned earlier in the above text is loaded.

[0171] In another embodiment of the particle radiation device according to the present invention, it is additionally or alternatively proposed that the guiding unit is designed as an objective lens and / or a scanner device. For example, the scanner device is designed so that the first particle beam and / or the second particle beam are directed to a certain area on the surface of the object in a targeted manner. The scanner device is designed, for example, to perform a scanning process. In an exemplary scanning process, the first particle beam and / or the second particle beam are directed to the object and are directed on the object. In an exemplary scanning process, the first particle beam and / or the second particle beam are particularly directed to any multiple positions of the area on the surface of the object.

[0172] In yet another embodiment of the particle radiation system according to the invention, it is additionally or alternatively provided that the particle radiation system has at least one of the following features in order to achieve a predeterminable angle between the first particle beam and / or the second particle beam and the object:

[0173] - a movably designed object holder for holding and positioning an object;

[0174] - the guide unit of the particle radiation device is designed to be movable;

[0175] The functional unit is designed in such a way that the second particle beam impinges on the object from a predeterminable direction, wherein the angle between the second particle beam and the object depends on the actuation of the functional unit.

[0176] In yet another embodiment of the particle radiation system according to the invention, it is provided additionally or alternatively thereto that the functional unit comprises a movably designed object holder.

[0177] In particular, it is provided that the particle irradiation device according to the invention is designed as an electron irradiation device and / or as an ion irradiation device. BRIEF DESCRIPTION OF THE DRAWINGS

[0178] The following describes other practical implementations and advantages of the present invention in conjunction with the accompanying drawings. In the accompanying drawings:

[0179] Figure 1 A first embodiment of a particle irradiation device according to the invention is shown;

[0180] Figure 2 A second embodiment of a particle irradiation device according to the invention is shown;

[0181] Figure 2A A schematic diagram of an object is shown;

[0182] Figure 3 A schematic diagram showing a stage of a particle irradiation device according to the present invention;

[0183] Figure 4 Shown according to Figure 3 Additional schematic diagrams of the stage shown;

[0184] Figure 5 A schematic diagram showing the sequence of a first specific embodiment of the method according to the invention for operating a particle irradiation system;

[0185] Figure 5A A schematic diagram showing a further sequence of a first specific embodiment of the method according to the invention for operating a particle irradiation system;

[0186] Figure 6 A schematic diagram showing the sequence of a second embodiment of the method according to the invention for operating a particle irradiation system;

[0187] Figure 7 A schematic diagram showing a sequence of a third embodiment of the method according to the invention for operating a particle irradiation system;

[0188] Fig. 7A A schematic diagram showing a flow chart of a fourth specific embodiment of the method according to the invention for operating a particle irradiation system;

[0189] Figure 8 A schematic diagram showing a sequence of a fifth embodiment of the method according to the invention for operating a particle irradiation system;

[0190] Fig. 8A A schematic diagram showing a flow chart of a sixth embodiment of the method according to the invention for operating a particle irradiation system;

[0191] Fig. 9 A schematic diagram showing a sequence of a seventh specific embodiment of the method according to the invention for operating a particle irradiation system;

[0192] Fig.10 A schematic diagram showing a flow chart of an eighth specific embodiment of the method according to the invention for operating a particle irradiation system;

[0193] Fig.11 a schematic diagram showing the flow of a ninth embodiment of the method according to the invention for operating a particle irradiation system; and

[0194] Fig.12 A schematic diagram shows the sequence of a first specific embodiment of a further method according to the invention for operating a particle irradiation system. DETAILED DESCRIPTION

[0195] The invention will now be explained in detail with the aid of a particle irradiation device in the form of a combined device having an electron irradiation column and an ion irradiation column. It is expressly pointed out that the invention can be applied to any particle irradiation device, in particular any combined device.

[0196] Figure 1 A schematic diagram of a particle radiation device in the form of a combined device 200 is shown. The combined device 200 has two particle radiation columns. On the one hand, the combined device 200 has a SEM 100. The SEM 100 has a first beam generator in the form of an electron source 101, which is designed as a cathode. The SEM 100 is further provided with an extraction electrode 102 and an anode 103, which is plugged into one end of a beam guide tube 104 of the SEM 100. For example, the electron source 101 is designed as a thermal field emitter. However, the present invention is not limited to such an electron source 101. Instead, any electron source can be used.

[0197] The electrons coming out of the electron source 101 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between the electron source 101 and the anode 103. In the embodiment shown here, the anode potential is 100V to 35kV, for example 5kV to 15kV, especially 8kV relative to the ground potential of the housing of the sample chamber 120. However, alternatively, the anode potential can also be at the ground potential.

[0198] Two converging lenses, namely a first converging lens 105 and a second converging lens 106, are arranged at the beam guide tube 104. Here, starting from the electron source 101 and viewed in the direction of the first objective lens 107, the first converging lens 105 is arranged first and then the second converging lens 106. It should be explicitly pointed out that other embodiments of the SEM 100 may have only a single converging lens. A first baffle unit 108 is arranged between the anode 103 and the first converging lens 105. The first baffle unit 108, together with the anode 103 and the beam guide tube 104, is at a high voltage potential (i.e., the potential of the anode 103) or is grounded. The first baffle unit 108 has a plurality of first baffle openings 108A, which are connected to the anode 103 and the beam guide tube 104. Figure 1108A. For example, there are two first baffle openings 108A. The opening diameter of each of the multiple first baffle openings 108A is different. With the help of an adjustment mechanism (not shown), the desired first baffle opening 108A can be adjusted to the beam axis 709 of the SEM 100. It is explicitly pointed out that in other embodiments, the first baffle unit 108 may be provided with only a single baffle opening 108A. In this embodiment, an adjustment mechanism may not be provided. The first baffle unit 108 is now designed to be fixed in position. A second baffle unit 109 fixed in position is arranged between the first converging lens 105 and the second converging lens 106. Instead of this, it is proposed that the second baffle unit 109 is designed to be movable.

[0199] The first objective 107 has pole shoes 110 in which holes are formed. The beam guiding tube 104 is guided through these holes. Coils 111 are arranged in the pole shoes 110 .

[0200] An electrostatic deceleration device is arranged in the lower region of the beam guide tube 104. This deceleration device has a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged at the end of the beam guide tube 104 facing the object 125, which is arranged on a movably designed object holder 114.

[0201] The tubular electrode 113 together with the beam guiding tube 104 is at the potential of the anode 103, while the separate electrodes 112 and the object 125 are at a lower potential relative to the potential of the anode 103. In the present case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be slowed down to the desired energy required for imaging, processing and / or analyzing the object 125.

[0202] The SEM 100 also has a scanner device 115, by which the primary electron beam can be deflected and scanned over the object 125. In this process, the electrons of the primary electron beam interact with the object 125. As a result of the interaction, detected interaction particles and / or interaction radiation occur. As interaction particles, in particular, electrons are emitted from the first surface of the object 125 or from a region near the surface (so-called secondary electrons) or electrons of the primary electron beam are backscattered (so-called backscattered electrons).

[0203] The object 125 and the individual electrodes 112 can also be at different potentials, different from ground. The position of the deceleration of the primary electron beam relative to the object 125 can thereby be set. If the deceleration is carried out, for example, relatively close to the object 125, the imaging errors are smaller.

[0204] In order to detect secondary electrons and / or backscattered electrons, a detector assembly is arranged in the beam guide tube 104, which detector assembly has a first detector 116 and a second detector 117. The first detector 116 is arranged on the source side along the first beam axis 709, while the second detector 117 is arranged on the object side along the first beam axis 709 in the beam guide tube 104. The first detector 116 and the second detector 117 are arranged offset from each other in the direction of the first beam axis 709 of the SEM 100. The first detector 116 and the second detector 117 each have a through-opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guide tube 104. The first beam axis 709 of the SEM 100 extends through the respective through-openings.

[0205] The second detector 117 is mainly used to detect secondary electrons. The secondary electrons first have a small kinetic energy and an arbitrary direction of movement when leaving the object 125. The secondary electrons are accelerated in the direction toward the first objective lens 107 by the strong suction field emitted from the tubular electrode 113. The secondary electrons enter the first objective lens 107 approximately in parallel. The beam diameter of the beam of the secondary electrons is also kept small in the first objective lens 107. The first objective lens 107 now strongly acts on the secondary electrons and produces a relatively short secondary electron focus with a sufficiently steep angle relative to the first beam axis 709, so that the secondary electrons are further dispersed from each other after focusing and hit the second detector on the effective area of ​​the second detector 117. On the contrary, only a small part of the electrons scattered back at the object 125 (i.e., the scattered back electrons with relatively high kinetic energy relative to the secondary electrons when leaving the object 125) are recorded by the second detector 117. The high kinetic energy of the backscattered electrons when leaving the object 125 and the angle relative to the first beam axis 709 result in the beam waist (i.e. the beam region with the smallest diameter) of the backscattered electrons being located near the second detector 117. Most of the backscattered electrons pass through the through opening of the second detector 117. The first detector 116 is therefore used essentially for recording the backscattered electrons.

[0206] In a further embodiment of the SEM 100, the first detector 116 may be designed to also have a reverse field grid 116A. The reverse field grid 116A is arranged on the side of the first detector 116 pointing toward the object 125. The reverse field grid 116A has a negative potential relative to the potential of the beam guide tube 104, so that only backscattered electrons with high energy pass through the reverse field grid 116A to reach the first detector 116. Additionally or alternatively, the second detector 117 has a further reverse field grid that is designed similarly to the aforementioned reverse field grid 116A of the first detector 116 and has a similar function.

[0207] Furthermore, the SEM 100 has a sample chamber detector 119 in the sample chamber 120 , for example an Everhart-Thornley detector or an ion detector having a light-shielding detection surface coated with metal.

[0208] The detection signals generated by the first detector 116 , the second detector 117 , and the sample chamber detector 119 are used to generate an image or multiple images of the first surface of the object 125 .

[0209] It is explicitly pointed out that the baffle openings of the first baffle unit 108 and the second baffle unit 109 and the through-openings of the first detector 116 and the second detector 117 are shown exaggeratedly. The through-openings of the first detector 116 and the second detector 117 have a size in the range of 0.5 mm to 5 mm perpendicular to the first beam axis 709. For example, they are designed to be circular and have a diameter in the range of 1 mm to 3 mm perpendicular to the first beam axis 709.

[0210] The second baffle unit 109 is constructed as an orifice plate in the embodiment shown here and is provided with a second baffle opening 118 for allowing the primary electron beam to pass through, and the second baffle opening has a size in the range of 5 μm to 500 μm, for example 35 μm. Alternatively, in another embodiment, it is proposed that the second baffle unit 109 is provided with a plurality of baffle openings, which can be mechanically deflected toward the primary electron beam or the primary electron beam can reach these baffle openings when using electric and / or magnetic deflection elements. The second baffle unit 109 is designed as a pressure grading plate. This pressure grading plate will be arranged with the electron source 101 and ultra-high vacuum prevails (10 -7 hPa to 10 -12 hPa) and the first region with high vacuum (10 -3 hPa to 10 -7 The second region is an intermediate pressure region of the beam guiding tube 104 leading to the sample chamber 120 .

[0211] The sample chamber 120 is in a vacuum state. In order to generate a vacuum, a pump (not shown) is arranged at the sample chamber 120. Figure 1 In the embodiment shown in FIG. 1 , the sample chamber 120 operates within a first pressure range or a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, while the second pressure range only includes pressures greater than 10 -3 In order to ensure these pressure ranges, the sample chamber 120 is sealed in terms of vacuum technology.

[0212] The object holder 114 is arranged on the stage 122. The stage 122 has a motion unit so that the object holder 114 is designed to be able to move in three directions arranged perpendicularly to each other, namely in the x direction (first stage axis), the y direction (second stage axis) and the z direction (third stage axis). In addition, the stage 122 has a motion unit so that the object holder 114 can rotate around two rotation axes (stage rotation axes) arranged perpendicularly to each other. The present invention is not limited to the above-mentioned stage 122. Instead, the stage 122 can have additional translation axes and rotation axes, and the object holder 114 can move along these translation axes or around these rotation axes.

[0213] The SEM 100 also has a third detector 121, which is arranged in the sample chamber 120. Specifically, the third detector 121 is arranged behind the stage 122 along the first beam axis 709 as seen from the electron source 101. The stage 122 and therefore the object holder 114 can be rotated so that an object 125 arranged on the object holder 114 can be penetrated by the primary electron beam. When the primary electron beam passes through the object 125, the electrons of the primary electron beam interact with the material of the object 125. The electrons that pass through the object 125 are detected by the third detector 121.

[0214] A radiation detector 500 is arranged at the sample chamber 120, by which interaction radiation, such as X-ray radiation and / or cathode luminescence, is detected. The radiation detector 500, the first detector 116, the second detector 117 and the sample chamber detector 119 are connected to a control unit 123, which has a monitor 124. The third detector 121 is also connected to the control unit 123. For the sake of clarity, it is not shown in the figure. The control unit 123 processes the detection signals generated by the first detector 116, the second detector 117, the sample chamber detector 119, the third detector 121 and / or the radiation detector 500, and displays these detection signals on the monitor 124 in the form of an image or spectrum.

[0215] The control unit 123 also has a database 126 in which data are stored and from which data are read. The control unit 123 also has a processor 127 into which a computer program product with a program code is loaded, which, when executed, controls the combined device 200 in such a way that the method according to the invention is carried out. This will be discussed in more detail later below.

[0216] The SEM 100 is used to generate a first particle beam, i.e. the primary electron beam already described earlier above, and has the above-mentioned first beam axis 709. In addition, the combined device 200 is provided with an ion irradiation device 300, which is also arranged at the sample chamber 120. The ion irradiation device 300 also has an optical axis, which is oriented at Figure 1 The second beam axis is provided with the reference numeral 710 and is also referred to below as the second beam axis.

[0217] The SEM 100 is arranged vertically relative to the sample chamber 120. In contrast, the ion irradiation device 300 is arranged to be inclined at an angle of about 0° to 90° relative to the SEM 100. Figure 1 For example, an arrangement of about 50° is shown in FIG. The ion irradiation device 300 has a second beam generator in the form of an ion beam generator 301. Ions are generated by the ion beam generator 301, and these ions constitute a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302 at a predeterminable potential. Then, the second particle beam passes through the ion optical device of the ion irradiation device 300, wherein the ion optical device has a converging lens 303 and a second objective lens 304. The second objective lens 304 ultimately generates an ion probe, which is focused on an object 125 arranged at an object holder 114. The object holder 114 is arranged on a stage 122.

[0218] An adjustable or selectable baffle 306, a first electrode device 307 and a second electrode device 308 are arranged above the second objective lens 304 (i.e., in the direction toward the ion beam generator 301), wherein the first electrode device 307 and the second electrode device 308 are designed as grid electrodes. With the help of the first electrode device 307 and the second electrode device 308, the second particle beam is scanned on the first surface of the object 125, wherein the first electrode device 307 acts in a first direction and the second electrode device 308 acts in a second direction opposite to the first direction. Thus, for example, scanning is performed in the x direction. By rotating the further electrodes (not shown) at the first electrode device 307 and the second electrode device 308 by 90°, scanning is performed in the y direction perpendicular to the x direction.

[0219] exist Figure 1 The distances between the various units of the combined device 200 shown in FIG. 2 are shown exaggeratedly in order to better illustrate the various units of the combined device 200 .

[0220] Figure 2 A particle irradiation device is shown in the form of a second embodiment of a particle irradiation device in the form of a combined device 202. Figure 2 The combined device 202 is based on Figure 1The combined device 200 is provided with the same reference numerals. The embodiments described above are also applicable here. The combined device 202 has two particle radiation columns. On the one hand, the combined device 202 is provided as in Figure 1 The combined device 202 is also provided with a SEM 100 as shown in Figure 1 The ion radiation device 300 shown in FIG. Figure 2 The second embodiment shown in FIG. 1 further comprises a gas supply device 1000 .

[0221] The gas supply device 1000 is used to supply a gaseous precursor to a specific location on the first surface of the object 125 and / or the object holder 114. The gas supply device 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is contained in the precursor reservoir 1001, for example as a solid, gaseous or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid phase, the liquid phase and the gas phase is adapted so that the required vapor pressure is available.

[0222] For example, phenanthrene is used as a precursor. Then, a carbon layer or a layer containing carbon is basically deposited on the first surface of the object 125 and / or the object holder 114. Instead, for example, a precursor with a metal can be used to deposit a metal or a layer containing a metal on the first surface of the object 125 and / or the object holder 114. However, the deposit is not limited to carbon and / or metal. Instead, any substance, such as a semiconductor, a non-conductor or other compound, can be deposited on the first surface of the object 125 and / or the object holder 114. In addition, it is also proposed to use a precursor to grind the material of the object 125 and / or the object holder 114 when interacting with one of the two particle beams.

[0223] The gas supply device 1000 is provided with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 in the direction toward the object 125 and / or the object holder 114, which can be placed near the first surface of the object 125 and / or the object holder 114, for example at a distance of 10 μm to 1 mm from the first surface of the object 125 and / or the object holder 114. The cannula 1003 has a supply opening, the diameter of which is, for example, in the range of 10 μm to 1000 μm, in particular in the range of 100 μm to 600 μm. The supply line 1002 has a valve 1004 for regulating the flow of the gaseous precursor into the supply line 1002. In other words, when valve 1004 is open, a gaseous precursor is introduced from precursor reservoir 1001 into supply line 1002 and directed to the first surface of object 125 and / or object holder 114 via cannula 1003. When valve 1004 is closed, the flow of the gaseous precursor to the first surface of object 125 and / or object holder 114 stops.

[0224] The gas supply device 1000 is also provided with an adjustment unit 1005, which enables adjustment of the position of the sleeve 1003 in all three spatial directions (i.e., the x-direction, the y-direction, and the z-direction) and adjustment of the orientation of the sleeve 1003 by rotation and / or tilting. The gas supply device 1000 and therefore also the adjustment unit 1005 are connected to the control unit 123 of the second embodiment of the combined device 202.

[0225] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, it is provided in these further embodiments that the precursor reservoir 1001 is arranged, for example, on a wall of the room in which the second embodiment of the combination device 202 is located.

[0226] The gas supply device 1000 has a temperature measuring unit 1006. For example, an infrared measuring instrument or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the present invention is not limited to the use of such a temperature measuring unit. Instead, any suitable temperature measuring unit applicable to the present invention can be used as the temperature measuring unit. In particular, it can be proposed that the temperature measuring unit 1006 is not arranged on the gas supply device 1000 itself, but is arranged, for example, spaced apart from the gas supply device 1000.

[0227] The gas supply device 1000 also has a temperature setting unit 1007. The temperature setting unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature setting unit 1007 is designed as a heating and / or cooling device, which has, for example, a heating wire and / or a Peltier element. However, the present invention is not limited to the use of such a temperature setting unit 1007. Instead, any suitable temperature setting unit can be used in the present invention.

[0228] The objects 125 arranged at the object holder 114 of the combined device 200 and at the object holder 114 of the combined device 202 will now be described below. Figure 1 and Figure 2 Compared with the diagram in Figure 2A Object 125 is shown schematically and in an enlarged manner.

[0229] The object 125 has a first surface 150 and a second surface 152. At at least one predeterminable first position 151 on the first surface 150 of the object 125, the first beam axis 709 strikes the first surface 150 of the object 125. At at least one predeterminable second position (not shown) on the first surface 150 of the object 125, the second beam axis 710 strikes the first surface 150 of the object 125.

[0230] The at least one predeterminable first position 151 on the first surface 150 and the at least one predeterminable second position on the first surface 150 may be identical. Alternatively, the at least one predeterminable second position on the first surface 150 of the object 125 may deviate from the at least one predeterminable first position 151 on the first surface 150 of the object 125. For example, the distance between the at least one predeterminable second position on the first surface 150 of the object 125 and the at least one predeterminable first position 151 on the first surface 150 of the object 125 is at most 500 nm, in particular at most 250 nm, and further in particular at most 100 nm. For example, the distance between the at least one predeterminable second position on the first surface 150 of the object 125 and the at least one predeterminable first position 151 on the first surface 150 of the object 125 may be caused by the difference in the angles at which the first beam axis 709 and the second beam axis 710 strike the first surface 150 of the object 125.

[0231] The thickness 154 of the object 125 is given by the length of a connecting straight line, wherein the connecting straight line connects at least one predeterminable first position 151 on the first surface 150 of the object 125 with a second position 153 on the second surface 152 of the object 125. For example, the thickness 154 is given by the smallest possible distance between the first predeterminable position 151 on the first surface 150 of the object 125 and the second position 153 on the second surface 152 of the object 125. It should be noted that the thickness 154 is not in principle given by the smallest possible distance between the first predeterminable position 151 on the first surface 150 of the object 125 and any second position 153 on the second surface 152 of the object 125. Rather, the second position 153 on the second surface 152 of the object 125 can result from a relative positioning relative to the first predeterminable position 151 on the first surface 150 of the object 125. For example, the second position 153 on the second surface 152 of the object 125 is derived from the predeterminable first position 151 on the first surface 150 of the object 125, so that the second position 153 on the second surface 152 of the object 125 is located at the intersection of the auxiliary line and the second surface 152 of the object 125. In this case, the auxiliary line is formed, for example, by an auxiliary plane perpendicular to the first predeterminable position 151 on the first surface 150 of the object 125 and passing through the first predeterminable position 151, wherein the auxiliary plane is given by the first surface 150 of the object 125. However, the auxiliary plane can also be formed, for example, by a surface to be obtained by a processing of the object 125. In other words, the thickness 154 is given by the material thickness of the object 125 at at least one predeterminable first position 151 on the first surface 150 of the object 125.

[0232] In this case, the inner position 155 is, for example, a position arranged inside the object 125. The inner position 155 is arranged in particular close to at least one predefinable first position 151, so that the primary electron beam first passes through the predefinable first position 151 and then through the inner position 155.

[0233] It is noted that the present invention is not limited to the objects 125 described herein. Rather, the present invention may have any object 125 suitable for the present invention.

[0234] The stage 122 of the combined device 200 and the stage 122 of another embodiment of the combined device 202 will now be described below. The stage 122 is designed as a stage having a motion unit, which is Figure 3 and Figure 4 It is to be noted that the present invention is not limited to the stage 122 described herein. Rather, the present invention may have any movable stage suitable for the present invention.

[0235] An object holder 114 with an object 125 is arranged on the object stage 122. The object stage 122 has a movement unit which ensures the movement of the object holder 114 so that a region of interest on the object 125 can be analyzed, processed and / or imaged by means of a particle beam. Figure 3 and Figure 4 The motion unit is schematically shown in FIG. 4 and will be explained below.

[0236] The stage 122 has a first motion unit 600 at the housing 601 of the sample chamber 120, in which the stage 122 is arranged. The first motion unit 600 can be used to move the object holder 114 along the z-axis (third stage axis). In addition, a second motion unit 602 is provided. The second motion unit 602 can rotate the object holder 114 around the first stage rotation axis 603 (also referred to as the tilt axis). This second motion unit 602 is used to tilt the object 125 around the first stage rotation axis 603.

[0237] A third motion unit 604 is further arranged on the second motion unit 602, which is designed as a guide for a slide and ensures that the object holder 114 can move in the x direction (first stage axis). The aforementioned slide is further another motion unit, namely the fourth motion unit 605. The fourth motion unit 605 is designed so that the object holder 114 can move in the y direction (second stage axis). For this purpose, the fourth motion unit 605 has a guide, in which another slide is guided, on which a holding portion 609 with the object holder 114 and the object 125 is further arranged.

[0238] The holding portion 609 is further designed to have a fifth movement unit 606, which enables the holding portion 609 to be rotated about a second stage rotation axis 607. The second stage rotation axis 607 is oriented perpendicularly to the first stage rotation axis 603.

[0239] Based on the above arrangement, the stage 122 of the embodiment discussed herein has the following motion chain: a first motion unit 600 (moving along the z-axis) - a second motion unit 602 (rotating around the first stage rotation axis 603) - a third motion unit 604 (moving along the x-axis) - a fourth motion unit 605 (moving along the y-axis) - a fifth motion unit 606 (rotating around the second stage rotation axis 607).

[0240] In another embodiment (not shown), it is provided that a further movement unit is arranged on the object carrier 122 , so that a movement along a further translation axis and / or about a further rotation axis is possible.

[0241] As from Figure 4 As can be seen in , each of the above-mentioned motion units is connected to a stepper motor. Therefore, the first motion unit 600 is connected to the first stepper motor M1 and is driven by the driving force provided by the first stepper motor M1. The second motion unit 602 is connected to the second stepper motor M2, which drives the second motion unit 602. The third motion unit 604 is further connected to the third stepper motor M3. The third stepper motor M3 provides a driving force to drive the third motion unit 604. The fourth motion unit 605 is connected to the fourth stepper motor M4, wherein the fourth stepper motor M4 drives the fourth motion unit 605. In addition, the fifth motion unit 606 is connected to the fifth stepper motor M5. The fifth stepper motor M5 provides a driving force to drive the fifth motion unit 606. The aforementioned stepper motors M1 to M5 are controlled by a motor control unit 608 (see Figure 4 ).

[0242] The implementation of the method according to the present invention is explained in more detail below with respect to the combined device 202 .

[0243] Figure 5 A schematic diagram of a process flow of a first embodiment of the method according to the invention is shown. The method according to the invention is used to operate a combined device 202 to determine a thickness 154 of an object 125, wherein the method according to the invention mainly involves adapting and / or determining a control parameter value of at least one control parameter of the combined device 202 and treating the object 125 by means of a primary electron beam and / or ion beam.

[0244] In method step S1 of the method according to the invention, a first particle beam, ie a primary electron beam of combination device 202 , is first guided to at least one predeterminable first position 151 on first surface 150 of object 125 using at least one guiding unit of combination device 202 .

[0245] It is noted that first surface 150 of object 125 may be formed by any surface of object 125 .

[0246] The above-mentioned guide unit (first guide unit) is understood to be any unit for guiding the primary electron beam onto the object 125, but also any unit for shaping the primary electron beam, which is then guided to the object 125. The first guide unit is designed, for example, as a first objective lens 107 for focusing the primary electron beam onto the object 125, an electrostatic and / or magnetic unit for beam shaping or beam guiding the primary electron beam (for example in the form of a coil 111 or a scanner device 115), an stigmator, a converging lens 105, 106 and / or a mechanically adjustable baffle unit in the form of a first baffle unit 108 and a second baffle unit 109, by which the primary electron beam is limited. In particular, a radiation column in the form of a beam guiding tube 104 of the combined device 202 is also understood as a first guide unit.

[0247] In a further method step S2 of the method according to the invention, interaction particles and / or interaction radiation are detected using a detector, for example using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202, wherein the interaction particles and / or interaction radiation originate from the interaction of the primary electron beam with the object 125 when the primary electron beam strikes at least one predeterminable first position 151 on the first surface 150 of the object 125. As described above, the interaction particles are designed, for example, as secondary particles, in particular secondary electrons, and / or as backscattered particles, in particular backscattered electrons. The interaction radiation is in particular X-ray radiation and / or cathode luminescence.

[0248] In method step S3 of the method according to the present invention, a detection signal is generated based on detected interacting particles and / or detected interacting radiation using a detector, for example, using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202.

[0249] In this case, the detection signal may, for example, be related to the number of detected interacting particles, for example to the intensity of the detected interacting radiation, for example to the energy of the detected interacting particles and / or the detected interacting radiation, for example to the spatial distribution of the detected interacting particles and / or the detected interacting radiation, for example to the spectral distribution of the detected interacting radiation, for example to the energy distribution of the detected interacting particles and / or for example to the phase information of the detected interacting radiation.

[0250] In a further method step S4 of the method according to the invention, a thickness 154 of the object 125 is determined at at least one predefinable first position 151 on the first surface 150 of the object 125 based on the generated detection signal. The thickness 154 is determined using the control unit 123 of the combined device 202. With regard to the thickness, reference is made to the embodiments derived further above, which also apply here.

[0251] The control unit 123 of the combined device 202 is particularly used to control and / or set at least one functional unit of the combined device 202. The functional unit is understood above and below as a structural unit of the combined device 202 that can be set in some way. For example, the position of the functional unit in the combined device 202 can be set. The functional unit can be designed in particular as a movably designed stage 122. In addition or alternatively, it is proposed that the construction method of the functional unit is set to an electrostatic and / or magnetic type, such as a converging lens 303 and / or a second objective lens 304 and / or an adjustable or selectable baffle 306 and / or a first electrode device 307 and / or a second electrode device 308. The present invention is not limited to the above-mentioned setting possibilities. Instead, the functional unit can be set in any manner suitable for the present invention. In particular, the second guide unit is designed as a functional unit.

[0252] In method step S5 of the method according to the invention, a deviation of a determined thickness 154 of the object 125 from a predeterminable thickness value of the object 125 is determined at at least one predeterminable first position 151 on the first surface 150 of the object 125. The deviation of the determined thickness 154 of the object 125 from the predeterminable thickness value is understood to be the difference between the determined thickness 154 of the object 125 and the predeterminable thickness value. In other words, the deviation of the determined thickness 154 of the object 125 from the predeterminable thickness value refers to a distance calculated from the difference between the determined thickness 154 and the predeterminable thickness value. In other words, the object 125 having a thickness 154 of a predeterminable thickness value can be achieved by removing or applying a material having a thickness corresponding to the distance at at least one predeterminable first position 151 on the first surface 150 of the object 125 to achieve the predeterminable thickness value.

[0253] In other words, the deviation is determined at the at least one predeterminable first position 151 on the first surface 150 of the object 125. If, for example, the amount of the deviation exceeds a predeterminable value, the deviation can be used, for example, to determine whether further processing is to be performed. Whether material should be removed or applied at the at least one predeterminable second position on the first surface 150 of the object 125 for further processing is determined by the sign of the above-mentioned difference between the determined thickness 154 and the predeterminable thickness value.

[0254] In this case, the predeterminable thickness value is selected, for example, from a first range of 1 nm to 100 nm, preferably from a second range between 1 nm and 80 nm, further preferably from a third range between 1 nm and 50 nm, wherein the range limits are contained in the above ranges.

[0255] In a further method step S6 of the method according to the invention, at least one control parameter value of at least one control parameter is adapted and / or determined according to the determined deviation using the control unit 123 to control one of the aforementioned functional units of the combined device 202, wherein the functional unit affects at least one pre-given characteristic of the combined device 202 related to the second particle beam in the form of an ion beam. For example, in this method step, the control parameter value is set to a first value. For example, the control parameter can be designed as a current flowing through the coil of the second objective lens 304 of the combined device 202, so that the ions of the ion beam are focused or defocused by the coil. In addition, the control parameter can also be designed, for example, as a voltage for accelerating and / or decelerating the ions of the ion beam. In addition, the control parameter can also be designed, for example, as a voltage of the first electrode device 307 and / or the second electrode device 308 for deflecting the ions of the ion beam. In addition, the control parameter can also be designed, for example, as a signal for controlling a movably designed stage 122. The present invention is not limited to the above examples of control parameters. Rather, in the present invention, any control parameter suitable for the present invention can be used to manipulate at least one of the above-mentioned functional units of the combination device 202 .

[0256] For example, if the deviation determined in method step S5 indicates that further processing is to be performed and if the difference between the determined thickness 154 and the predeterminable thickness value is greater than zero, i.e. if the determined thickness 154 is greater than the predeterminable thickness value, material should be removed at at least one second predeterminable location on the first surface 150 of the object 125. For example, if the deviation determined in method step S5 indicates that further processing is to be performed and the difference between the determined thickness 154 and the predeterminable thickness value is less than zero, i.e. if the determined thickness 154 is less than the predeterminable thickness value, material should be applied at at least one second predeterminable location on the first surface 150 of the object 125. The control parameter value of the at least one control parameter is adapted according to the desired removal / application. Determining the at least one control parameter value is understood to mean that, for example, a user of the particle radiation device inputs a value into a control unit of the particle radiation device.

[0257] In method step S7 of the method according to the invention, the functional unit is controlled using the control unit 123 with the adapted at least one control parameter value of the control parameter and / or the determined at least one control parameter value of the control parameter, so that at least one predeterminable ion beam-related property of the combination device 202 is influenced by the functional unit. The functional unit can be implemented, for example, as a focusing lens 303 and / or a second objective lens 304 and / or an adjustable or selectable baffle 306 and / or a first electrode arrangement 307 and / or a second electrode arrangement 308.

[0258] In a further method step S8 of the method according to the invention, the ion beam of the combined device 202 is guided to at least one second predeterminable position on the first surface 150 of the object 125 using the second guiding unit of the combined device 202, and the object 125 is processed using the second particle beam in the form of an ion beam at at least one second predeterminable position on the first surface 150 of the object 125. The object 125 can be processed using the ion beam, for example, by grinding or applying material at at least one second predeterminable position on the first surface 150 of the object 125.

[0259] The material is applied to the object 125 by means of the combined device 202, for example by supplying gas. A gaseous precursor substance (so-called precursor) can be introduced into the sample chamber 120 by means of the gas supply device 1000. For this purpose, for example, the valve 1004 is opened so that the precursor is introduced from the gas reservoir 1001 through the supply line 1002 into the sleeve 1003, which can be arranged at a distance of a few microns from at least one predeterminable second position on the first surface 150 of the object 125. In this way, the gaseous precursor substance can be guided to the at least one predeterminable second position as accurately as possible and in high concentration. By the interaction of the ion beam with the gaseous precursor substance, a material layer is deposited on the surface 150 of the object 125. For example, it is known that gaseous phenanthrene is introduced into the sample chamber as a gaseous precursor substance by means of the gas supply device 1000. Then, a carbon layer or a layer containing carbon is basically deposited on the surface 150 of the object 125. It is also known to use a gaseous precursor substance with a metal to deposit a metal or a layer containing a metal on the surface 150 of the object 125. However, the deposit is not limited to carbon and / or metal. Instead, any substance can be deposited on the surface of the object 125, such as a semiconductor, a non-conductor, or other compound.

[0260] Additionally, the gaseous precursor species may be used to abrade the material of the object 125 when interacting with the particle beam.

[0261] Similarly, it is also possible to use only the primary electron beam and / or the ion beam to grind the material of the object 125 without additionally using a gaseous precursor substance. For this purpose, for example, the control unit 123 and / or the functional unit are used to operate the first guide unit for guiding the primary electron beam and / or the second guide unit for guiding the ion beam, so as to achieve the desired material grinding. With regard to the first guide unit, the second guide unit, the control unit 123 and the functional unit, reference is made to the embodiments obtained above, which also apply here.

[0262] Material is applied to object 125 and / or material is removed from the object in order, for example, to achieve a predeterminable thickness 154 of object 125 .

[0263] The above-described method steps which constitute the present method are also referred to in their entirety below as basic method.

[0264] As explained above and below, method steps can be carried out in parallel. Figure 5A The parallel execution of method steps S7 and S8 following method step S6 is shown. With regard to these method steps, the embodiments described above and below apply.

[0265] Figure 6 A schematic diagram showing a process flow of a second embodiment of the method according to the present invention is shown. Figure 6 A second embodiment of the method of the invention is based on Figure 5 Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Figure 6 The second embodiment of the method of the present invention repeats the method steps. For example, the second embodiment of the method of the present invention includes the following method steps:

[0266] First, according to Figure 5 The method of the invention shown implements method steps S1 to S8.

[0267] In accordance with Figure 6In method step S11 of the method according to the invention, the primary electron beam of the combination device 202 is guided again to at least one predeterminable first position 151 on the first surface 150 of the object 125 using the first guiding unit of the combination device 202. The first guiding unit is designed, for example, as a first objective lens 107 for focusing the primary electron beam onto the object 125, an electrostatic and / or magnetic unit for beam shaping or beam guiding the primary electron beam (for example in the form of a coil 111 or a scanner device 115), an stigmator, a converging lens 105, 106 and / or a mechanically adjustable baffle unit in the form of a first baffle unit 108 and a second baffle unit 109, by which the primary electron beam is limited. In particular, a radiation column in the form of a beam guiding tube 104 of the combination device 202 is also understood as a first guiding unit.

[0268] In accordance with Figure 6 In a further method step S21 of the method according to the invention, further interaction particles and / or further interaction radiation are detected using a detector, for example using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202, wherein the interaction particles and / or the interaction radiation originate from the interaction of the primary electron beam with the object 125 when the primary electron beam strikes at least one predeterminable first position 151 on the first surface 150 of the object 125. As described above, the interaction particles are designed, for example, as secondary particles, in particular secondary electrons, and / or as backscattered particles, in particular backscattered electrons. The interaction radiation is in particular X-ray radiation and / or cathode luminescence.

[0269] In accordance with Figure 6 In method step S31 of the method of the present invention, a detector is used to generate an additional detection signal based on detected additional interacting particles and / or detected additional interacting radiation, for example, using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202.

[0270] In accordance with Figure 6 In a further method step S41 of the method of the invention, a further thickness 154 of the object 125 is determined at at least one predeterminable first position 151 on the first surface 150 of the object 125 using the control unit 123 of the combined device 202 based on the generated further detection signal.

[0271] In accordance with Figure 6In method step S51 of the method according to the invention, a further deviation of a determined further thickness 154 of the object 125 from a further predeterminable thickness value of the object 125 is determined at at least one predeterminable first position 151 on the first surface 150 of the object 125 .

[0272] In accordance with Figure 6 In a further method step S61 of the method of the present invention, at least one further control parameter value of at least one further control parameter is adapted and / or determined according to the determined further deviation using the control unit 123 to control the functional unit of the combined device 202. For example, in this method step, the control parameter value set to the first value in method step S6 is set to the second value during method step S61, wherein the first value and the second value may be different. The embodiments of the control parameters obtained during the description of method step S6 also apply to the further control parameters: for example, the further control parameter can be designed as a current flowing through the coil of the second objective lens 304 of the combined device 202, so that the ions of the ion beam are focused or defocused by the coil. In addition, the control parameter can also be designed, for example, as a voltage for accelerating and / or decelerating the ions of the ion beam. In addition, the further control parameter can also be designed, for example, as a voltage of the first electrode device 307 and / or the second electrode device 308 for deflecting the ions of the ion beam. In addition, the further control parameter can also be designed, for example, as a signal for controlling the movably designed stage 122. The present invention is not limited to the above examples of control parameters and / or additional control parameters. Instead, in the present invention, any control parameters suitable for the present invention can be used to control at least one of the above functional units of the combined device 202.

[0273] In accordance with Figure 6In method step S71 of the method of the present invention, the control unit 123 is used to control the functional unit with at least one other control parameter value of the other control parameter adapted (for example, now adapted to the second value) and / or with at least one other control parameter value of the other control parameter determined (for example, now set to the second value), so that at least one predeterminable ion beam-related characteristic of the combination device 202 is affected by the functional unit. The above-mentioned embodiments related to the functional unit also apply here: the functional unit is understood above and below as a structural unit of the combination device 202 that can be set in some way. For example, the position of the functional unit in the combination device 202 can be set. The functional unit can be designed in particular as a movably designed stage 122. In addition or alternatively, it is proposed that the construction of the functional unit is set to electrostatic and / or magnetic, for example the focusing lens 303 and / or the second objective lens 304 and / or the adjustable or selectable baffle 306 and / or the first electrode device 307 and / or the second electrode device 308. The present invention is not limited to the above-mentioned configuration possibilities. Instead, the functional unit can be configured in any manner suitable for the present invention. In particular, the second guide unit is designed as a functional unit.

[0274] In a further method step S81 of the method according to the invention, the ion beam of the combined device 202 is guided to at least one second predeterminable position on the first surface 150 of the object 125 using the second guiding unit of the combined device 202, and the object 125 is treated using the ion beam at at least one second predeterminable position on the first surface 150 of the object 125. With regard to the treatment of the object 125 at at least one second predeterminable position on the first surface 150 of the object 125 using the second particle beam in the form of an ion beam, reference is made to the embodiments described further above, which describe the treatment of the object 125 using the ion beam.

[0275] In accordance with Figure 6 In the method according to the invention, the further predeterminable thickness value is in particular different from the predeterminable thickness value. In the second embodiment described above, as described above, the basic method is thus at least once again carried out, wherein the predeterminable thickness value is replaced by the further predeterminable thickness value. In this regard, it is provided, for example, that the thickness 154 of the object 125 approaches the target thickness in the above-described manner. Thus, according to Figure 6 The second embodiment described above includes an iterative method.

[0276] In this case, the target thickness is selected, for example, from a first range of 1 nm to 100 nm, preferably from a second range of 1 nm and 80 nm, further preferably from a third range of 1 nm and 50 nm, wherein the range limits are included in the above ranges.

[0277] In this case, according to Figure 6 The method according to the invention is not limited to the above-described two repetitions of all method steps of the basic method. Rather, in a further embodiment of the method according to the invention it is provided that the basic method is repeated with any frequency using adapted further thickness values. In this case, for example, the number of repetitions can depend on the thickness 154 of the object 125, the target thickness and / or the treatment of the object 125 with the ion beam. In particular, the basic method can be repeated until the thickness 154 of the object 125 corresponds to the target thickness.

[0278] Repeating the basic method with different predeterminable thickness values ​​can in particular avoid large deviations in amount between the predeterminable thickness value and the determined thickness 154 of the object 125. This makes it possible to handle the object 125 in a protective manner, since the thickness 154 of the object 125 can be determined in accordance with the thickness 154 of the object 125. Figure 6 The amount of material removed or applied during the operation of the method according to the invention is limited and in particular must not exceed a predeterminable maximum value.

[0279] Figure 7 A schematic diagram showing a process of a third embodiment of the method according to the present invention is shown. Figure 7 A third embodiment of the method of the present invention is based on Figure 5 Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Figure 7 A third embodiment of the method according to the invention has a further method step S62, which comprises: using the data to calculate the control parameter value and / or loading the control parameter value from the database 126 directly into the control unit 123 as a control parameter. The above and below embodiments of the control parameter value also apply to the further control parameter value. Likewise, the above and below embodiments of the control parameter also apply to the further control parameter. In particular, method step S62 can be performed after method step S5. For example, first according to the example Figure 5 The method of the present invention shown carries out method steps S1 to S5 , which are followed, for example, by a further method step S62 , and only then are method steps S6 to S8 carried out.

[0280] In this case, the data for calculating the control parameter value can be data stored on a storage unit. In this case, the storage unit is designed, for example, as a data carrier, for example, with a database 126. However, these data can also be determined and / or calculated from process parameters and / or measurement parameters of the method. The database 126 is used to store the determined and / or calculated data, for example control parameter values.

[0281] Fig. 7A A schematic diagram showing a process of a fourth embodiment of the method according to the present invention is shown. Fig. 7A A fourth embodiment of the method of the present invention is based on Figure 6 Therefore, reference is first made to the above explanations, which also apply here. Figure 6 The method of the present invention may be implemented in different ways, according to Fig. 7A A fourth embodiment of the method of the invention has an additional method step S62. In this case, the method according to Figure 7 The resulting implementation scheme related to method step S62. Fig. 7A Shown in accordance with Figure 6 Method step S62 is performed after method step S51 .

[0282] Figure 8 A schematic diagram showing a process of a fifth embodiment of the method according to the present invention is shown. Figure 8 A fifth embodiment of the method of the present invention is based on Figure 5 Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Figure 8The fifth embodiment of the method according to the invention has further method steps S52, S52Q, S52A and S52B. In method step S52, it is determined whether the deviation determined at at least one first predeterminable position 151 on the first surface 150 of the object 125 is greater in amount than a predeterminable threshold value 400. If the deviation determined at at least one first predeterminable position 151 on the first surface 150 of the object 125 is greater in amount than a predeterminable threshold value 400, further processing is performed at at least one second predeterminable position on the first surface 150 of the object 125. In method step S52Q, the sign of the difference between the determined thickness 154 of the object 125 and the predeterminable thickness value of the object 125 is determined at at least one first predeterminable position 151 on the first surface 150 of the object 125. If the difference is greater than zero, i.e. has a positive sign, method step S52A is performed. In this method step, material of the object 125 is removed at at least one second position that can be predetermined on the first surface 150 of the object 125 using the combined device 202. If the difference at at least one first position 151 that can be predetermined on the first surface 150 of the object 125 is less than zero, i.e. the difference has a negative sign, method step S52B is performed. In this method step, material is deposited (i.e. applied) at at least one second position that can be predetermined on the first surface 150 of the object 125 using the combined device 202.

[0283] In this case, the threshold value 400 may be predetermined, for example, by inputting the threshold value 400 by a user and / or retrieving the threshold value 400 from a database. The aforementioned database corresponds, for example, to the database 126 explained earlier above. Alternatively, the aforementioned database is different from the aforementioned database 126. The threshold value may also come from a calculation, for example, based on process parameters and / or measurement parameters.

[0284] Removing material using combined apparatus 202 may be performed, for example, by using an ion beam to process object 125. Additionally or alternatively, as described above, material of object 125 may be removed using a gaseous precursor substance with the aid of an electron beam and / or an ion beam.

[0285] As described above, material deposition using the combined apparatus 202 can be achieved, inter alia, by using gaseous precursor substances together with an electron beam and / or an ion beam to treat the object 125. Deposition is essentially applying a material to the object 125.

[0286] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the threshold value 400 is stored in a further database and / or is loaded from a further database into the control unit 123. In this case, the further database can be designed differently from the database 126 explained earlier above. Alternatively, the further database can, for example, correspond to the database 126 explained earlier above.

[0287] In particular, according to Figure 5 After method step S5, method step S52 is performed. For example, first according to Figure 5 The method of the present invention shown implements method steps S1 to S5. This is followed, for example, by a further method step S52, and only then can method steps S52Q, S52A and / or S52B be performed. Method steps S6 to S8 can then be performed.

[0288] Fig. 8A A schematic diagram showing a process of a sixth embodiment of the method according to the present invention is shown. Fig. 8A A sixth embodiment of the method of the present invention is based on Figure 6 Therefore, reference is first made to the above explanations, which also apply here. Figure 6 The method of the present invention may be implemented in different ways, according to Fig. 8A A sixth embodiment of the method of the invention has the further method steps S52, S52Q, S52A and S52B. In this case, the method according to Figure 8 The resulting implementation scheme relates to method steps S52, S52Q, S52A and S52B. Fig. 8A Shows that following closely Figure 6 After the method step S51, the method step S52 is performed. Figure 8 According to the embodiment obtained, method steps S52Q, S52A and / or S52B may then be performed. Method step S61 may then be performed.

[0289] Fig. 9 A schematic diagram showing a process of a seventh embodiment of the method according to the present invention is shown. Fig. 9 A seventh embodiment of the method of the present invention is based on Figure 5 Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Fig. 9 A seventh embodiment of the method according to the invention has further method steps.

[0290] For example, the method according to the present invention comprises the following method steps according to the seventh embodiment:

[0291] First, according to Figure 5 The method of the invention shown implements method steps S1 to S8.

[0292] As a basis Fig. 9 In the next method step S13 of the method according to the invention, after method step S8, the primary electron beam of the combination device 202 is guided to at least one further predeterminable first position 151 on the first surface 150 of the object 125 using a first guide unit of the combination device 202. The first guide unit is designed, for example, as a first objective lens 107 for focusing the primary electron beam onto the object 125, an electrostatic and / or magnetic unit for beam shaping or beam guiding the primary electron beam (for example in the form of a coil 111 or a scanner device 115), an stigmator, a focusing lens 105, 106 and / or a mechanically adjustable baffle unit in the form of a first baffle unit 108 and a second baffle unit 109, by which the primary electron beam is limited. In particular, a radiation column in the form of a beam guiding tube 104 of the combination device 202 is also understood as a first guide unit.

[0293] In accordance with Fig. 9 In a further method step S23 of the method according to the invention, further interaction particles and / or further interaction radiation are detected using a detector, for example using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202, wherein the interaction particles and / or the interaction radiation originate from the interaction of the primary electron beam with the object 125 when the primary electron beam strikes at least one further predeterminable first position 151 on the first surface 150 of the object 125. As described above, the interaction particles are designed, for example, as secondary particles, in particular secondary electrons, and / or as backscattered particles, in particular backscattered electrons. The interaction radiation is in particular X-ray radiation and / or cathode luminescence.

[0294] In accordance with Fig. 9 In method step S33 of the method of the present invention, a detector is used to generate another detection signal based on detected further interacting particles and / or detected further interacting radiation, for example, using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202.

[0295] In accordance with Fig. 9In a further method step S43 of the method of the present invention, a further thickness 154 of the object 125 is determined at at least one further predeterminable first position 151 on the first surface 150 of the object 125 based on the generated further detection signal using the control unit 123 of the combined device 202.

[0296] In accordance with Fig. 9 In method step S53 of the method of the present invention, a further deviation of a determined further thickness 154 of the object 125 from a further predeterminable thickness value of the object 125 is determined at at least one further predeterminable first position 151 on the first surface 150 of the object 125 .

[0297] In accordance with Fig. 9 In a further method step S63 of the method of the present invention, at least one further control parameter value of at least one further control parameter is adapted and / or determined according to the determined further deviation using the control unit 123 to control the functional unit of the combined device 202. For example, in this method step, the control parameter value set to the third value in method step S6 is set to the fourth value during method step S63, wherein the third value and the fourth value may be different. The embodiments of the control parameters obtained during the description of method step S6 also apply to the further control parameters: for example, the further control parameter can be designed as a current flowing through the coil of the second objective lens 304 of the combined device 202, so that the ions of the ion beam are focused or defocused by the coil. In addition, the further control parameter can also be designed, for example, as a voltage for accelerating and / or decelerating the ions of the ion beam. In addition, the further control parameter can also be designed, for example, as a voltage of the first electrode device 307 and / or the second electrode device 308 for deflecting the ions of the ion beam. In addition, the further control parameter can also be designed, for example, as a signal for controlling the movably designed stage 122. The present invention is not limited to the above examples of control parameters. Instead, in the present invention, any control parameter suitable for the present invention can be used to control at least one of the above functional units of the combined device 202.

[0298] In accordance with Fig. 9In method step S73 of the method of the present invention, the control unit 123 is used to control the functional unit with at least one other control parameter value adapted for another control parameter and / or at least one other control parameter value determined for another control parameter, so that at least one predeterminable ion beam-related characteristic of the combined device 202 is affected by the functional unit. The above-mentioned embodiments related to the functional unit also apply here: the functional unit is understood above and below as a structural unit of the combined device 202 that can be set in a certain way. For example, the position of the functional unit in the combined device 202 can be set. The functional unit can be designed in particular as a movably designed stage 122. In addition or alternatively, it is proposed that the construction mode of the functional unit is set to electrostatic and / or magnetic, such as the converging lens 303 and / or the second objective lens 304 and / or the adjustable or selectable baffle 306 and / or the first electrode device 307 and / or the second electrode device 308. The present invention is not limited to the above-mentioned setting possibilities. Instead, the functional unit can be set in any way suitable for the present invention. In particular, the second guide unit is designed as a functional unit.

[0299] In accordance with Fig. 9 In a further method step S83 of the method of the present invention, the second particle beam of the combined device 202 is guided to at least one further predeterminable second position on the first surface 150 of the object 125 using the second guiding unit of the combined device 202, and the object 125 is treated at at least one further predeterminable second position on the first surface 150 of the object 125 using the ion beam. With regard to the treatment of the object 125 at at least one further predeterminable second position on the first surface 150 of the object 125 using the second particle beam in the form of an ion beam, reference is made to the embodiments described earlier above, which describe the treatment of the object 125 using the ion beam. The at least one further predeterminable first position 151 on the first surface 150 of the object 125 and the at least one further predeterminable second position on the first surface 150 of the object 125 can be different or the same.

[0300] In this case, the predefinable further thickness value can correspond to the predefinable thickness value, for example. Alternatively, according to one of the above-described embodiments of the method according to the invention, the predefinable further thickness value can differ from the predefinable thickness value.

[0301] In this case, yet further thickness values ​​are selected, for example, from a first range of 1 nm to 100 nm, preferably from a second range of between 1 nm and 80 nm, further preferably from a third range of between 1 nm and 50 nm, wherein the range limits are contained in the abovementioned ranges.

[0302] Fig.10 A schematic diagram showing a process of an eighth embodiment of the method according to the present invention is shown. Fig.10 An eighth embodiment of the method of the present invention is based on Figure 5 Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Fig.10 An eighth embodiment of the method of the present invention processes the same location multiple times.

[0303] According to Figure 6 Unlike the above-mentioned second embodiment of the method of the present invention, this eighth embodiment may, for example, not be adapted to thickness values.

[0304] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the predeterminable thickness value is the same for all first positions on the first surface 150 of the object 125. In other words, the object 125 manufactured by the method according to the invention has a uniform thickness 154. In yet another way, the object 125 manufactured by the method according to the invention is manufactured to have a flat surface. In yet another way, the thickness 154 of the object 125 manufactured by the method according to the invention at at least one predeterminable first position 151 on the first surface 150 of the object 125 corresponds to the thickness 154 of the object 125 at at least one other predeterminable first position on the first surface 150 of the object 125.

[0305] Fig.11 A schematic diagram showing a process of a ninth embodiment of the method according to the present invention is shown. Fig.11 A ninth embodiment of the method of the present invention is based on Figure 5 and Figure 6 Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Fig.11 The ninth embodiment of the method according to the invention has the additional method steps S11, S21, S31 and S41, which are also referred to as measuring steps and are Figure 6 For example, after processing the object 125, the thickness 154 can be determined again by means of a measuring step.

[0306] For example, first according to Figure 5 The method of the invention shown implements method steps S1 to S8.

[0307] The measurement step consists of several method steps.

[0308] In accordance with Fig.11 In method step S11 of the method according to the invention, the primary electron beam of the combined device 202 is guided again to at least one predeterminable first position on the first surface of the object 125 using a first guiding unit. The first guiding unit is designed, for example, as a first objective lens 107 for focusing the primary electron beam onto the object 125, an electrostatic and / or magnetic unit for beam shaping or beam guiding the primary electron beam (for example in the form of a coil 111 or a scanner device 115), an stigmator, a converging lens 105, 106 and / or a mechanically adjustable baffle unit in the form of a first baffle unit 108 and a second baffle unit 109, by which the primary electron beam is limited. In particular, a radiation column in the form of a beam guiding tube 104 of the combined device 202 is also understood as a first guiding unit.

[0309] In accordance with Fig.11 In a further method step S21 of the method of the present invention, further interaction particles and / or further interaction radiation are detected using a detector, for example using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202, wherein the further interaction particles and / or the further interaction radiation come from the interaction of the primary electron beam with the object 125 when the primary electron beam hits at least one predeterminable first position 151 on the first surface 150 of the object 125.

[0310] The further interaction particles are designed, for example, as secondary particles, in particular secondary electrons, and / or as backscattered particles, in particular backscattered electrons. The further interaction radiation is in particular X-ray radiation and / or cathode luminescence.

[0311] In accordance with Fig.11 In method step S31 of the method of the present invention, a detector is used to generate an additional detection signal based on detected additional interacting particles and / or detected additional interacting radiation, for example, using the first detector 116 and / or the second detector 117 and / or the sample chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combined device 202.

[0312] In accordance with Fig.11In a further method step S41 of the method according to the invention, a further thickness of the object 125 is determined at at least one predefinable first position 151 on the first surface 150 of the object 125 based on the generated further detection signal.

[0313] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that, at at least one predeterminable first position 151 on the first surface 150 of the object 125, a dependency between the detection signal and the thickness 154 of the object 125 is used to determine the thickness 154 of the object 125. In other words, there is a dependency between the detection signal and the thickness 154 of the object 125, wherein the dependency can be used to determine the thickness 154 of the object 125.

[0314] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that when determining thickness 154 of object 125 using the dependency between the detection signal and thickness 154 of object 125 , at least one of the following properties is taken into account:

[0315] a material of the object 125 at at least one predefinable first position 151 on the first surface 150 of the object 125;

[0316] - at least one further object 125 material at an interior location 155 within the object 125 reached by the electrons of the primary electron beam;

[0317] a surface structure at at least one predefinable first position 151 on a first surface 150 of the object 125;

[0318] a shape of the primary electron beam at at least one predefinable first position 151 on a first surface 150 of the object 125;

[0319] a size of the primary electron beam at at least one predefinable first position 151 on a first surface 150 of the object 125;

[0320] - an intensity of the primary electron beam at at least one predefinable first position 151 on a first surface 150 of the object 125;

[0321] The landing energy of the primary electron beam at at least one predefinable first position 151 on the first surface 150 of the object 125 .

[0322] In this case, the inner position 155 is, for example, a position arranged inside the object 125. The inner position 155 is arranged in particular close to at least one predefinable first position 151, so that the primary electron beam first passes through the predefinable first position 151 and then through the inner position 155.

[0323] The surface structure may be given, for example, by the roughness of the first surface 150 of the object 125. For example, it may also occur that the surface structure is partially or completely formed by yet another material which is only located at certain locations on the first surface 150 of the object 125 and therefore does not cover the surface.

[0324] The shape of the primary electron beam refers, for example, to the shape of the primary electron beam when it hits the object 125. The shape of the primary electron beam can be influenced by the above-mentioned first guide unit of the combined device 202. The first guide unit is designed, for example, as a first objective lens 107 for focusing the primary electron beam onto the object 125, an electrostatic and / or magnetic unit for beam shaping or beam guiding the primary electron beam (for example in the form of a coil 111 or a scanner device 115), an stigmator, a converging lens 105, 106 and / or a mechanically adjustable baffle unit in the form of a first baffle unit 108 and a second baffle unit 109, by which the primary electron beam is limited. In particular, a radiation column in the form of a beam guide tube 104 of the combined device 202 is also understood as a first guide unit.

[0325] The size of the primary electron beam can, for example, also be influenced by the above-mentioned first guiding unit of the combined device 202, i.e., for example, by an electrostatic and / or magnetic unit for beam shaping or beam guiding, by the first objective lens 107, the coil 111, the scanner device 115, the stigmator, the first converging lens 105, the second converging lens 106, the mechanically adjustable baffle unit 108 and / or the mechanically adjustable baffle unit 109.

[0326] The intensity of the primary electron beam refers to, for example, the number of charged particles reaching a certain area on the object 125 within a certain period of time. In other words, the intensity of the primary electron beam refers to the current generated by the primary electron beam in a specific area on the object 125.

[0327] Landing energy refers to the kinetic energy carried by, for example, a single electron in the electrons when it strikes the object 125 .

[0328] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the thickness 154 is determined by using the detection signal to determine the thickness 154 of the object 125 by comparison with a mapping of the detection signal to the thickness of the object 125 which can be predetermined. In other words, the thickness 154 of the object 125 is determined by comparing the detection signal with a mapping of the detection signal to the thickness of the object 125 which can be predetermined. If the detection signal corresponds to the predeterminable detection signal, the thickness 154 of the object 125 corresponds to the thickness mapped to the predeterminable detection signal. In this case, the mapping of the detection signal to the thickness of the object 125 which can be predetermined can be stored in the database 126. In this case, the mapping of the detection signal to the thickness of the object 125 which can be predetermined can also come from a calculation.

[0329] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that a detection signal is generated based on the detected interacting particles and / or the detected interacting radiation. In this case, the detected interacting particles are formed by at least one of the following means:

[0330] - transmitted electrons detected using the third detector 121;

[0331] - reflected electrons detected using the first detector 116, the second detector 117, the sample chamber detector 119 and / or the third detector 121;

[0332] - secondary particles, in particular secondary electrons, detected using the first detector 116, the second detector 117, the sample chamber detector 119 and / or the third detector 121;

[0333] - backscattered particles, in particular backscattered electrons, detected using the first detector 116, the second detector 117, the sample chamber detector 119 and / or the third detector 121.

[0334] Additionally or alternatively, the detected interaction radiation is formed by at least one of the following radiation types:

[0335] - X-ray radiation detected using radiation detector 500; and

[0336] - Cathodoluminescence detected using radiation detector 500.

[0337] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that electrons of the primary electron beam of the combining device 202 and / or ions of the ion beam of the combining device 202 are transmitted through the object 125 .

[0338] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first surface 150 of the object 125 facing the ion beam encloses an angle of 0° to 90° with the ion beam of the combination device 202 directed to the first surface 150 of the object 125 at at least one predeterminable second position, wherein this is achieved by carrying out at least one of the following method steps:

[0339] - rotating the movable object holder 114 from an initial position in a first rotation direction about a first rotation axis, wherein the object 125 is arranged on the movable object holder 114 ;

[0340] -The second guide unit of the combined device 202 is rotated around the second rotation axis along the second rotation direction. According to the above-derived embodiment, the second guide unit is particularly designed as a functional unit. The functional unit is understood above and below as a structural unit of the combined device 202 that can be set in a certain way. For example, the position of the functional unit in the combined device 202 can be set. The functional unit can be particularly designed as a movably designed stage 122. In addition or alternatively, it is proposed that the construction mode of the functional unit is set to an electrostatic and / or magnetic type, such as a converging lens 303 and / or a second objective lens 304 and / or an adjustable or selectable baffle 306 and / or a first electrode device 307 and / or a second electrode device 308. The present invention is not limited to the above-mentioned setting possibilities. Instead, the functional unit can be set in any manner suitable for the present invention. Therefore, for example, the second guide unit of the combined device 202 can be rotated. As described above, the second guide unit can be designed as a functional unit and thus as a stage 122, for example, the movement unit of which is used to move the stage so that the object holder 114 rotates around at least one of the two rotation axes (stage rotation axes) arranged perpendicular to each other.

[0341] - Using the control unit 123 to control the functional unit with adapted deflection parameter values ​​of the deflection parameter, the ion beam strikes the first surface 150 of the object 125 from a predefinable direction at least one predefinable second location. With regard to the functional unit, reference is made to the just-explained embodiments, which also apply here.

[0342] The range limits of the above 0° to 90° range are included in the above range.

[0343] In one possible embodiment of the method according to the invention, the control parameter and / or the further control parameter is designed as a deflection parameter.

[0344] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first surface 150 of the object 125 facing the ion beam encloses an angle of 0° to −90° with the ion beam of the combination device 202 directed onto the first surface 150 of the object 125 at at least one predeterminable second position, wherein this is achieved by carrying out at least one of the following method steps:

[0345] -The movable object holder 114 is rotated from the initial position along the third rotation direction around the first rotation axis, wherein the third rotation direction is opposite to the first rotation direction. According to the above-derived embodiment, the second guide unit is particularly designed as a functional unit. The functional unit is understood above and below as a structural unit of the combined device 202 that can be set in a certain way. For example, the position of the functional unit in the combined device 202 can be set. The functional unit can be particularly designed as a movably designed stage 122. Additionally or alternatively, it is proposed that the construction mode of the functional unit is set to an electrostatic and / or magnetic type, such as a converging lens 303 and / or a second objective lens 304 and / or an adjustable or selectable baffle 306 and / or a first electrode device 307 and / or a second electrode device 308. The present invention is not limited to the above-mentioned setting possibilities. Instead, the functional unit can be set in any manner suitable for the present invention. Thus, for example, the second guide unit of the combined device 202 can be rotated by using a movement unit of the sample stage 122 to move the sample stage so that the object holder 114 rotates about at least one of two rotation axes (sample stage rotation axes) arranged perpendicular to each other;

[0346] - Using the control unit 123 to control the functional unit with adapted deflection parameter values ​​of the deflection parameter, the ion beam strikes the first surface 150 of the object 125 from a predefinable direction at least one predefinable second location. With regard to the functional unit, reference is made to the just-explained embodiments, which also apply here.

[0347] The range limits of the above 0° to -90° range are included in the above range.

[0348] In yet another embodiment of the method according to the invention, it is provided additionally or alternatively thereto that the first axis of rotation corresponds to the second axis of rotation.

[0349] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the deflection parameter values ​​are stored in a further database and / or retrieved from a further database. In this case, the further database can correspond, for example, to the database 126 already described above and / or to the further database already described above.

[0350] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the functional unit influences at least one of the following properties of the ion beam:

[0351] a shape of the ion beam at at least one second predefinable position on the first surface 150 of the object 125;

[0352] a dimension of the ion beam at at least one second predefinable position on the first surface 150 of the object 125;

[0353] - an intensity of the ion beam at at least one second predefinable position on the first surface 150 of the object 125;

[0354] a landing energy of the ion beam at at least one predeterminable second position on the first surface 150 of the object 125;

[0355] - deflection of the ion beam in the direction in which the ion beam is directed;

[0356] a dwell time of the ion beam at at least one second predefinable position on the first surface 150 of the object 125;

[0357] - distances between object points on the first surface 150 of the object 125, at which the ion beam is directed using at least one guiding unit of the combined device 202;

[0358] - an additional dwell time of the ion beam at the object point on the first surface 150 of the object 125; and

[0359] - controlling parameters of a scanner device for directing the ion beam onto an object point on the first surface 150 of the object 125 .

[0360] About functional unit, refer to the embodiment that just obtained, these embodiments also apply here.According to the embodiment that obtains above, the second guiding unit is designed as functional unit in particular.Functional unit is understood as the structural unit that can be set by some way of combination device 202 both above and below.For example, the position of functional unit in combination device 202 can be set.Functional unit can be designed as stage 122 that is designed movably in particular.Additionally or alternatively, it is proposed that the construction mode of functional unit is set as electrostatic and / or magnetic type, for example converging lens 303 and / or second objective lens 304 and / or adjustable or selectable baffle 306 and / or first electrode device 307 and / or second electrode device 308.The present invention is not limited to the above-mentioned setting possibility.Rather, the functional unit can be set in any way suitable for the present invention.

[0361] Regarding the shape of the ion beam, the size of the ion beam, the intensity of the ion beam and the landing energy of the ion beam, reference is made to the embodiments regarding the shape of the primary electron beam, the size of the primary electron beam, the intensity of the primary electron beam and the landing energy of the primary electron beam, and these embodiments are similarly applicable here as well.

[0362] The dwell time refers, for example, to the length of time that the ion beam dwells at at least one predefinable second position on the first surface 150 of the object 125 .

[0363] The distance between object points (also referred to as pixel pitch) indicates the degree of spacing between object points on the first surface 150 of the object 125. In this case, object points refer to points on the first surface 150 of the object 125, to which the ion beam is directed using at least one guiding unit. The distance can be formed, for example, by the distance between a predeterminable second position on the first surface 150 of the object 125 and another predeterminable second position on the first surface 150 of the object 125.

[0364] Another dwell time is, for example, the time during which the ion beam dwells at the object point.

[0365] Parameters for controlling the scanner device are other parameters which, according to the present invention, are suitable for controlling the functional unit to direct the ion beam to an object point on the first surface 150 of the object 125 so that the object 125 can be processed according to the present invention. According to the present invention, a scanner device is understood to be one of the at least one functional units of the combined device 202. The parameters for controlling the scanner device can, for example, relate to the duration between two consecutive processing of an object point. Furthermore, the parameters for controlling the scanner device can also, for example, relate to the processing sequence of the object points.

[0366] Fig.12 2 shows a schematic diagram of a process flow of a first embodiment of a further method according to the present invention. The further method according to the present invention is used to determine a processing point on a first surface 150 of an object 125 using a combined device 202. Fig.12 A first embodiment of the further method of the present invention is based on Figure 5 The above-described embodiments of the method of the present invention are described. Therefore, reference is first made to the above explanations, which also apply here. Figure 5 The method of the present invention may be implemented in different ways, according to Fig.12 The first embodiment of the further method of the invention has the further method steps S0 , S44Q, S44A and S44B.

[0367] In method step S0 of the further method according to the present invention, the object 125 is treated with an ion beam by directing the ion beam to a certain part of the object 125. For this purpose, the ion beam can be directed to the part using, for example, at least one guiding unit. It should be noted that the part can be located on any surface of the object 125.

[0368] It should be noted that at least one predeterminable first position 151 on the first surface 150 of the object 125 mentioned in method steps S1 , S2 , S3 , S4 , S44Q , S44A and S44B may be different from and / or the same as this part of the object 125 .

[0369] In method step S44Q of the further method according to the invention, it is determined whether the thickness 154 determined at at least one first predeterminable position 151 on the first surface 150 of the object 125 differs from the predeterminable thickness value 410. If the thickness 154 determined at at least one first predeterminable position 151 on the first surface 150 of the object 125 differs from the predeterminable thickness value 410, the at least one first predeterminable position 151 on the first surface 150 of the object 125 is identified as a treatment point (method step S44A). In other words, the at least one first predeterminable position 151 on the first surface 150 of the object 125 can be identified as a treatment point if the value resulting from the determination of the thickness 154 of the object 125 at at least one first predeterminable position 151 on the first surface 150 of the object 125 indicates that the thickness 154 has changed. Such a change may occur, for example, as a result of treating the object 125 with an ion beam when the ion beam is directed to a location on the object 125. In yet other words, a treatment point refers to a location on the first surface 150 of the object 125 where a change in thickness 154 occurs. In other words, a treatment point is a location on the first surface 150 of the object 125 that has been treated.

[0370] If the thickness 154 determined at at least one predeterminable first position 151 on the first surface 150 of the object 125 does not differ from the predeterminable thickness value 410, the at least one predeterminable first position 151 on the first surface 150 of the object 125 is not identified as a processing point (method step S44B).

[0371] In another embodiment of the further method according to the invention, it is additionally or alternatively provided that the thickness 154 of the object 125 is determined using the control unit 123 of the combined device 202 by comparing the generated detection signals of the process parameters and / or the measurement parameters with values ​​of a database, wherein the aforementioned database corresponds, for example, to the database 126 explained earlier above. Additionally or alternatively, calculations can also be performed by the processor of the combined device 202 based on the generated detection signals, process parameters and / or measurement parameters.

[0372] In yet another embodiment of the further method according to the invention, it is additionally or alternatively proposed that the predeterminable thickness value 410 is obtained by retrieving the thickness value 410 from another database, wherein the aforementioned other database corresponds, for example, to the database 126 explained earlier above. Additionally or alternatively, the predeterminable thickness value 410 can be obtained by the user of the combined device 202 inputting it into the control unit 123 of the combined device 202.

[0373] In other words, the thickness 154 of the object 125 can be determined at a certain position and, based on this determination, a predeterminable first position 151 on the first surface 150 of the object 125 can be determined as a processing point.

[0374] All embodiments of the method according to the invention described here are not restricted to the above-mentioned order of the method steps. Rather, any order of the method steps is conceivable and can be used in the method according to the invention, wherein these any orders are suitable for achieving the object of the invention in the sense of the invention. Alternatively or additionally, at least two method steps can also be carried out in parallel. Alternatively or additionally, individual method steps can also be omitted.

[0375] The features of the invention disclosed in the description, in the drawings and in the claims may be essential for the realization of the invention in its various embodiments individually and in any combination. The invention is not limited to the embodiments described. The invention may be varied within the scope of the claims and taking into account the knowledge of the relevant person skilled in the art.

[0376] ******* List of Reference Symbols 100 SEM

[0377] 101 Electron Source

[0378] 102 Extraction electrode

[0379] 103 Anode

[0380] 104 Beam guide tube 105 First Converging Lens 106 Second converging lens 107 First Objective

[0381] 108 First baffle unit 108A First baffle opening 109 Second baffle unit 110 pole shoes

[0382] 111 Coil

[0383] 112 Individual electrodes 113 Tubular Electrode

[0384] 114 Object Holder 115 Scanner Device 116 First Detector 116A Reverse Field Grid 117 Second Detector 118 Second baffle opening 119 Sample Chamber Detector 120 Sample Room

[0385] 121 Third Detector 122 Stage

[0386] 123 Control Unit

[0387] 124 Monitor

[0388] 125 Objects

[0389] 126 Database

[0390] 127 processors

[0391] 150 First Surface

[0392] 151 First position on first surface

[0393] 152 Second Surface

[0394] 153 Second position on second surface

[0395] 154 Thickness

[0396] 155 Internal location

[0397] 200 combined equipment

[0398] 202 Second Embodiment of Combined Device

[0399] 300 Ionizing Radiation Equipment

[0400] 301 Ion Beam Generator

[0401] 302 Extraction electrodes in ion radiation equipment

[0402] 303 Converging lens

[0403] 304 Second objective lens

[0404] 306 Adjustable or selectable baffles

[0405] 307 first electrode device

[0406] 308 second electrode device

[0407] 400 Predeterminable threshold

[0408] 410 Predeterminable thickness value

[0409] 500 Radiation Detector

[0410] 600 First motion unit

[0411] 601 Housing

[0412] 602 Second motion unit

[0413] 603 First stage rotation axis

[0414] 604 Third Movement Unit

[0415] 605 Fourth Movement Unit

[0416] 606 Fifth Movement Unit

[0417] 607 Second stage rotation axis

[0418] 608 Motor Control Unit

[0419] 609 Holding Department

[0420] 709 First beam axis

[0421] 710 Second beam axis

[0422] 1000 Gas supply device

[0423] 1001 Gas storage in the form of a precursor storage

[0424] 1002 Supply pipeline

[0425] 1003 Casing

[0426] 1004 Valve

[0427] 1005 Adjustment unit

[0428] 1006 Temperature measurement unit

[0429] 1007 Temperature setting unit

[0430] M1 Stepper Motor

[0431] M2 Second stepper motor

[0432] M3 third stepper motor

[0433] M4 fourth stepper motor

[0434] M5 fifth stepper motor

[0435] S0 to S8 Method steps

[0436] S11 Method steps

[0437] S13 Method steps

[0438] S21 Method Steps

[0439] S23 Method Steps

[0440] S31 Method Steps

[0441] S33 Method Steps

[0442] S41 Method Steps

[0443] S43 Method steps

[0444] S44A Method Steps

[0445] S44B Methods

[0446] S44Q Method Steps

[0447] S51 Method Steps

[0448] S52 Method Steps

[0449] S52A Method Steps

[0450] S52B Method Steps

[0451] S52Q Method Steps

[0452] S53 Method Steps

[0453] S61 Method Steps

[0454] S62 Method Steps

[0455] S63 Method Steps

[0456] S71 Method Steps

[0457] S73 Method Steps

[0458] S81 Method Steps

[0459] S83 Method steps.

Claims

1. A method for operating a particle irradiation device (200, 202), wherein the method comprises the following method steps: (i) guiding a first particle beam of the particle irradiation device (200, 202) to at least one predeterminable first position (151) on a first surface (150) of an object (125) using at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122) of the particle irradiation device (200, 202), wherein the particle irradiation device (200, 202) has at least one first beam generator (101) for generating the first particle beam, wherein the first particle beam has first charged particles, and wherein the particle irradiation device (200, 202) has at least one second beam generator (301) for generating a second particle beam, wherein the second particle beam has second charged particles; (ii) detecting interaction particles and / or interaction radiation using a detector (116, 117, 119, 121, 500) of the particle radiation device (200, 202), wherein the interaction particles and / or the interaction radiation originate from the interaction of the first particle beam with the object (125) when the first particle beam strikes the at least one predeterminable first position (151) on the first surface (150) of the object (125); (iii) using the detector (116, 117, 119, 121, 500) to generate a detection signal based on the detected interacting particles and / or the detected interacting radiation; (iv) determining, using a control unit (123) of the particle radiation device (200, 202), a thickness (154) of the object (125) at the at least one predeterminable first position (151) on the first surface (150) of the object (125) based on the generated detection signal, wherein the thickness (154) of the object (125) is given by the length of a connecting line, wherein the connecting line connects the at least one predeterminable first position (151) on the first surface (150) of the object (125) with a second position (153) on the second surface (152) of the object (125); (v) determining, at the at least one predeterminable first position (151) on the first surface (150) of the object (125), a deviation of the determined thickness (154) of the object (125) from a predeterminable value of the thickness of the object (125); and (vi) performing the following method steps: a. using the control unit (123) to adapt and / or determine at least one control parameter value of at least one control parameter in accordance with the determined deviation in order to actuate a functional unit (300, 301, 302, 303, 304, 306, 307, 308) of the particle radiation device (200, 202), wherein the functional unit (300, 301, 302, 303, 304, 306, 307, 308) influences at least one predeterminable property of the particle radiation device (200, 202) related to the second particle beam; b. using the control unit (123) to control the functional unit (300, 301, 302, 303, 304, 306, 307, 308) with at least one adapted control parameter value of the control parameter and / or at least one determined control parameter value, so that at least one predeterminable property of the particle radiation device (200, 202) related to the second particle beam is influenced by the functional unit (300, 301, 302, 303, 304, 306, 307, 308); c. using the at least one guiding unit (300, 303, 304, 306, 307, 308) of the particle radiation device (200, 202) to guide the second particle beam of the particle radiation device (200, 202) to at least one second position that can be predetermined on the first surface (150) of the object (125), and using the second particle beam to process the object (125) at the at least one second position that can be predetermined on the first surface (150) of the object (125).

2. The method according to claim 1 , wherein the method comprises at least one of the following method steps: (i) using electrons as the first charged particles; (ii) Using ions as the second charged particles.

3. The method according to claim 1 or 2, wherein after completing steps (i) to (vi) of the method according to claim 1, steps (i) to (vi) of the method according to claim 1 are performed at least once more, wherein when step (v) of the method according to claim 1 is performed at least once more, the thickness value is replaced by another thickness value, and wherein at the end of the last of the at least one additional runs of steps (i) to (vi) of the method according to claim 1, the target thickness (154) is reached.

4. The method according to at least one of the preceding claims, wherein the method comprises at least one of the following method steps: (i) using the data to calculate the control parameter value; (ii) directly loading the control parameter values ​​from the database (126).

5. The method according to at least one of the preceding claims, wherein processing the object (125) comprises one of the following method steps: (i) using the particle radiation device (200, 202) to remove and / or deposit material of the object (125) at the at least one predeterminable second position on the first surface (150) of the object (125), if the deviation determined at the at least one predeterminable first position (151) on the first surface (150) of the object (125) is greater in amount than a predeterminable threshold value (400); (ii) if the deviation determined at the at least one predeterminable first position (151) on the first surface (150) of the object (125) is less in amount than the predeterminable threshold value (400), the particle radiation device (200, 202) is not used to grind and / or deposit material at the at least one predeterminable second position on the first surface (150) of the object (125).

6. The method according to claim 5, wherein the threshold value (400) is stored in a database (126) and / or is loaded from the database (126) into the control unit (123).

7. A method according to at least one of the preceding claims, wherein method steps (i) to (v) of claim 1 are repeated at at least one additional pre-given first position (151) on the first surface (150) of the object (125), and wherein method step (vi) of claim 1 is repeated at at least one additional pre-given second position on the first surface (150) of the object (125).

8. A method according to claim 7, wherein the at least one additional pre-given first position (151) on the first surface (150) of the object (125) corresponds to the at least one pre-given first position (151) on the first surface (150) of the object (125), and wherein the at least one additional pre-given second position on the first surface (150) of the object (125) corresponds to the at least one pre-given second position on the first surface (150) of the object (125).

9. The method according to at least one of the preceding claims, wherein the predeterminable thickness value is the same for all first positions (151) on the first surface (150) of the object (125).

10. The method according to claim 1 , wherein an additional measuring step is performed at the at least one predeterminable first position (151) on the first surface (150) of the object (125), wherein the measuring step comprises the following method steps: (i) directing the first particle beam of the particle irradiation device (200, 202) to the at least one predeterminable first position (151) on the first surface (150) of the object (125) using the at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122); (ii) detecting, using the detector (116, 117, 119, 121, 500) of the particle irradiation device (200, 202), further interacting particles and / or further interacting radiation, wherein the further interacting particles and / or the further interacting radiation originate from an interaction of the first particle beam with the object (125) when the first particle beam impinges on the at least one predeterminable first position (151) on the first surface (150) of the object (125); (iii) generating, using the detector (116, 117, 119, 121, 500), a further detection signal based on the detected further interacting particles and / or the detected further interacting radiation; (iv) determining a thickness (154) of the object (125) at the at least one predeterminable first position (151) on the first surface (150) of the object (125) based on the generated further detection signal.

11. A method according to at least one of the preceding claims, wherein at the at least one predeterminable first position (151) on the first surface (150) of the object (125), the thickness (154) of the object (125) is determined using a dependency between the detection signal and the thickness (154) of the object (125).

12. The method according to claim 11, wherein when using the dependency between the detection signal and the thickness (154) of the object (125) to determine the thickness (154) of the object (125), at least one of the following characteristics is taken into account: - material of the object (125) at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - at least one further material of the object (125) at an interior location (155) within the object (125) reached by the first charged particles of the first particle beam; - a surface structure at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - a shape of the first particle beam at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - a size of the first particle beam at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - an intensity of the first particle beam at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - a landing energy of the first particle beam at the at least one predeterminable first position (151) on the first surface (150) of the object (125).

13. A method according to at least one of the preceding claims, wherein the thickness (154) is determined in the following manner: the thickness (154) of the object (125) is determined by comparing the detection signal with a mapping of a predeterminable detection signal to the thickness of the object (125).

14. The method according to at least one of the preceding claims, wherein the detection signal is generated based on detected interacting particles and / or detected interacting radiation, wherein the detected interacting particles are formed by at least one of the following means: - transmitted electrons detected using said detector (116, 117, 119, 121, 500); - reflected electrons detected using said detector (116, 117, 119, 121, 500); - secondary particles, in particular secondary electrons, detected using said detector (116, 117, 119, 121, 500); - backscattered particles, in particular backscattered electrons, detected using the detector (116, 117, 119, 121, 500); and / or where The detected interaction radiation is formed by at least one of the following radiation types: - X-ray radiation detected using said detector (116, 117, 119, 121, 500); as well as - Cathodoluminescence detected using said detector (116, 117, 119, 121, 500).

15. The method according to at least one of the preceding claims, wherein the first charged particles of the first particle beam of the particle radiation device (200, 202) are transmitted through the object (125).

16. The method according to claim 1 , wherein the first surface (150) of the object (125) facing the second particle beam encloses an angle of 0° to 90° with the second particle beam of the particle irradiation device (200, 202) directed to the first surface (150) of the object (125) at the at least one predeterminable second position, wherein this is achieved by carrying out at least one of the following method steps: (i) rotating a movable object holder (114) from an initial position along a first rotation direction about a first rotation axis, wherein the object (125) is arranged on the movable object holder (114); (ii) rotating the at least one guide unit (300, 303, 304, 306, 307, 308) of the particle radiation device (200, 202) around a second rotation axis in a second rotation direction; (iii) using the control unit (123) to control the functional unit (300, 301, 302, 303, 304, 306, 307, 308) with an adapted deflection parameter value of a deflection parameter so that the second particle beam hits the at least one predeterminable second position (151) on the first surface (150) of the object (125) from a predeterminable direction.

17. The method according to claim 16, wherein the first surface (150) of the object (125) facing the second particle beam encloses an angle of 0° to −90° with the second particle beam of the particle irradiation device (200, 202) directed to the first surface (150) of the object (125) at the at least one predeterminable second position, wherein this is achieved by carrying out at least one of the following method steps: (i) rotating the movable object holder (114) from the initial position about the first rotation axis in a third rotation direction, wherein the third rotation direction is opposite to the first rotation direction; (ii) rotating the at least one guide unit (300, 303, 304, 306, 307, 308) of the particle radiation device (200, 202) around the second rotation axis in a fourth rotation direction, wherein the fourth rotation direction is opposite to the second rotation direction; (iii) using the control unit (123) to control the functional unit (300, 301, 302, 303, 304, 306, 307, 308) with the adapted deflection parameter value of the deflection parameter so that the second particle beam hits the at least one predeterminable second position on the first surface (150) of the object (125) from the predeterminable direction.

18. The method of at least one of claims 16 and 17, wherein the first axis of rotation corresponds to the second axis of rotation.

19. The method according to at least one of claims 16 to 18, wherein the deflection parameter value is stored in the database (126) and / or retrieved from the database (126).

20. The method according to at least one of the preceding claims, wherein the functional unit (300, 301, 302, 303, 304, 306, 307, 308) influences at least one of the following properties of the second particle beam: - a shape of the second particle beam at the at least one second predeterminable position on the first surface (150) of the object (125); a size of the second particle beam at the at least one second predeterminable position on the first surface (150) of the object (125); - an intensity of the second particle beam at the at least one second predeterminable position on the first surface (150) of the object (125); - a landing energy of the second particle beam at the at least one second predeterminable position on the first surface (150) of the object (125); - deflecting the second particle beam in the direction in which the second particle beam is directed; a dwell time of the second particle beam at the at least one second predeterminable position on the first surface (150) of the object (125); - a distance between object points on the first surface (150) of the object (125), to which the second particle beam is guided using the at least one guiding unit (300, 303, 304, 306, 307, 308) of the particle irradiation device (200, 202); a further dwell time of the second particle beam at the object point on the first surface (150) of the object (125); as well as - controlling parameters of a scanner device, wherein the scanner device is used to direct the second particle beam onto the object point on the first surface (150) of the object (125).

21. A method for determining a treatment point on a first surface (150) of an object (125) using a particle irradiation device (200, 202), wherein the particle irradiation device (200, 202) has at least one first beam generator (101) for generating a first particle beam, wherein the first particle beam has first charged particles, and wherein the particle irradiation device (200, 202) has at least one second beam generator (301) for generating a second particle beam, and wherein the particle irradiation device has a processor (127), wherein the second particle beam has second charged particles, wherein the method comprises the following method steps: (i) using the second particle beam to process the object (125), specifically by directing the second particle beam to a certain part of the object (125); (ii) directing the first particle beam of the particle irradiation device (200, 202) to at least one predeterminable first position (151) on the first surface (150) of the object (125) using at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122) of the particle irradiation device (200, 202); (iii) detecting interaction particles and / or interaction radiation using a detector (116, 117, 119, 121, 500) of the particle radiation device (200, 202), wherein the interaction particles and / or the interaction radiation originate from the interaction of the first particle beam with the object (125) when the first particle beam strikes the at least one predeterminable first position (151) on the first surface (150) of the object (125); (iv) generating a detection signal based on the detected interacting particles and / or the detected interacting radiation using the detector (116, 117, 119, 121, 500); (v) determining, using a control unit (123) of the particle radiation device (200, 202), a thickness (154) of the object (125) at the at least one predeterminable first position (151) on the first surface (150) of the object (125) based on the generated detection signal, wherein the thickness (154) of the object (125) is given by the length of a connecting line, wherein the connecting line connects the at least one predeterminable first position (151) on the first surface (150) of the object (125) with a second position (153) on the second surface (152) of the object (125); (vi) if the determined thickness (154) deviates from a predefinable thickness value, determining the at least one predefinable first position (151) on the first surface (150) of the object (125) as a processing point.

22. The method according to claim 21, wherein the thickness (154) of the object (125) is determined using the control unit (123) of the particle radiation device (200, 202), specifically by comparing the detection signal generated by the process parameters and / or measurement parameters with the values ​​of the database (126), and / or calculating based on the generated detection signal, process parameters and / or measurement parameters by the processor (127) of the particle radiation device (200, 202).

23. The method according to claim 21 or 22, wherein the predeterminable thickness value comes from a thickness value retrieved from another database and / or is input into the control unit (123) of the particle radiation device (200, 202) by a user of the particle radiation device (200, 202).

24. A computer program product having a program code which can be loaded into a processor (127) of the particle radiation system (200, 202) and which, when executed, controls the particle radiation system (200, 202) in order to carry out the method according to at least one of the preceding claims.

25. A particle radiation device (200, 202) for imaging, processing and / or analyzing an object (125), the particle radiation device having - at least one first beam generator (101) for generating a first particle beam with first charged particles; - at least one second beam generator (301) for generating a second particle beam with second charged particles; at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122, 300, 303, 304, 306, 307, 308) for guiding and / or focusing the first particle beam and / or the second particle beam onto the object (125), at least one functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) of the particle irradiation system (200, 202), wherein the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) influences at least one predeterminable property of the particle irradiation system (200, 202); - at least one control unit (123) for determining the thickness (154) of the object (125) and for operating the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308); at least one detector (116, 117, 119, 121, 500) for detecting interaction particles and / or interaction radiation generated by the interaction of the first particle beam with the object (125) when the first particle beam hits the object (125); at least one display unit (124) for displaying an image of the object (125) and / or presenting data about the object (125), wherein the image and / or the presentation are generated based on detection signals generated by detecting the interacting particles and / or the interacting radiation; as well as - at least one processor (127) into which the computer program product according to claim 24 is loaded.

26. The particle radiation device (200, 202) according to claim 25, wherein the guide unit is designed as an objective (107, 304) and / or as a scanner device (115).

27. The particle irradiation device (200, 202) according to claim 25 or 26, wherein the particle irradiation device (200, 202) has at least one of the following features in order to achieve a predeterminable angle between the first particle beam and / or the second particle beam and the object (125): a. a movably designed object holder (114) for holding and positioning the object (125); b. The guide unit (100, 104, 105, 106, 107, 108, 109, 115, 122, 300, 303, 304, 306, 307, 308) of the particle radiation device (200, 202) is designed to be movable; c. The functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) is designed so that the second particle beam hits the object (125) from the predeterminable direction, wherein the angle between the second particle beam and the object (125) depends on the control of the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308).

28. The particle radiation device (200, 202) according to one of claims 25 to 27, wherein the particle radiation device (200, 202) is an electron radiation device (100) and / or an ion radiation device (300).

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