Bearing device, semiconductor process equipment and preparation method of bearing device

Abstract

The invention discloses a bearing device, semiconductor process equipment and a preparation method of the bearing device, and belongs to the technical field of semiconductor processing. The disclosed bearing device comprises a bearing part, a bonding layer, a transition layer and a cooling part which are sequentially stacked, the bearing part is used for bearing a wafer, and the bearing part and the cooling part are bonded through the bonding layer and the transition layer; the part, making contact with the bonding layer, of the bearing piece is made of a ceramic material, and the part, making contact with the transition layer, of the cooling piece is made of a metal material. The thermal expansion coefficient of the transition layer and the thermal expansion coefficient of the metal material are on the same order of magnitude, and the softening temperature of the transition layer is lower than that of the bonding layer. According to the scheme, the problem that the wafer processing effect is easily influenced by a bearing device related to the related technology can be solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor processing technology, and specifically relates to a carrier device, semiconductor process equipment and a method for preparing the carrier device. Background Art

[0002] In the semiconductor production process, semiconductor process equipment is usually used to process wafers. Specifically, a carrier for carrying wafers is provided in the semiconductor process equipment. During the specific process of processing the wafers, the wafers can be stably placed on the carrier. In addition to carrying the wafers, the carrier also has the function of cooling and adsorbing the wafers. Specifically, the carrier usually includes a carrier and a cooling member. The carrier and the cooling member are connected by an adhesive layer, which can be a silicone layer. The carrier is used to carry and adsorb the wafers, and the cooling member can control the temperature of the wafer through the carrier.

[0003] However, when low-temperature coolant is passed into the cooling element, the adhesive layer and the cooling element may crack due to the mismatch in thermal expansion coefficients, resulting in loose bonding between the carrier and the cooling element, which in turn leads to less heat transfer from the carrier to the cooling element. In this case, the cooling capacity of the carrier device for the wafer becomes poor, which may easily affect the processing effect on the wafer. In addition, when the carrier and the cooling element are bonded with the adhesive layer, a large bonding stress may easily be generated between the carrier and the cooling element, which may easily increase the deformation of the carrier, thereby easily affecting the bearing and adsorption effects of the carrier on the wafer, and further affecting the processing effect on the wafer.

[0004] In summary, the supporting device involved in the related art has the problem of easily affecting the processing effect of the wafer. Summary of the invention

[0005] The present application discloses a carrier device, semiconductor process equipment and a method for preparing the carrier device, so as to solve the problem that the carrier device involved in the related art easily affects the processing effect on the wafer.

[0006] In order to solve the above technical problems, this application adopts the following technical solutions: A load-bearing device, comprising a load-bearing member, a cooling member, a transition layer and an adhesive layer stacked in sequence, The carrier is used to carry the wafer, and the carrier and the cooling element are bonded via the bonding layer and the transition layer; The material of the portion of the bearing member in contact with the bonding layer is a ceramic material, and the material of the portion of the cooling member in contact with the transition layer is a metal material; The thermal expansion coefficient of the transition layer is on the same order of magnitude as that of the metal material, and the softening temperature of the transition layer is lower than the softening temperature of the adhesive layer.

[0007] A semiconductor process equipment comprises a process chamber and the above-mentioned carrying device, wherein the carrying device is arranged in the process chamber.

[0008] A method for preparing a carrying device, the method comprising: preparing a bearing member and a cooling member respectively; An adhesive layer and a transition layer are formed between the carrier and the cooling member, and the carrier, the adhesive layer, the transition layer and the cooling member are bonded together by a bonding process; wherein, The material of the portion of the cooling member in contact with the transition layer is a metal material, the material of the portion of the supporting member in contact with the bonding layer is a ceramic material, the thermal expansion coefficient of the transition layer is on the same order of magnitude as that of the metal material, and the softening temperature of the transition layer is lower than the softening temperature of the bonding layer.

[0009] The technical solution adopted in this application can achieve the following beneficial effects: In the present application, since the carrier and the cooling member are bonded by an adhesive layer and a transition layer, that is, a transition layer is provided between the cooling member and the adhesive layer, and the softening temperature of the transition layer is lower than the softening temperature of the adhesive layer, therefore, in the specific process of connecting the carrier and the cooling member, the temperature required to soften the transition layer can be lower, and the adhesive layer will not be softened, so as to ensure that the adhesive layer can stably bond the transition layer and the carrier. At the same time, since the material of the part of the cooling member in contact with the transition layer is a metal material, and the thermal expansion coefficient of the transition layer is at the same order of magnitude as the thermal expansion coefficient of the metal material, this makes the thermal expansion coefficient of the transition layer closer to the thermal expansion coefficient of the cooling member, thereby making the transition layer and the cooling member more firmly bonded, that is, not easily affected by the temperature of the coolant introduced into the cooling member, and since the transition layer has a certain thickness and softness, this allows the transition layer to relieve stress to reduce the deformation of the carrier, thereby avoiding affecting the bearing and adsorption effect of the carrier on the wafer, thereby avoiding affecting the processing effect on the wafer. Therefore, the carrier device disclosed in the present application can solve the problem that the carrier device involved in the related art easily affects the processing effect of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a schematic cross-sectional structural diagram of the carrying device disclosed in the embodiment of the present application; Figure 2 It is a schematic diagram of a partial cross-sectional structure of a carrying device disclosed in an embodiment of the present application; Figure 3 This is a schematic diagram of a structure in which an air inlet hole is provided on the first carrier plate disclosed in an embodiment of the present application; Figure 4This is a structural schematic diagram of an air inlet passage provided on the second carrier plate disclosed in an embodiment of the present application; Figures 5 to 7 This is a schematic diagram of the process of preparing a carrier device disclosed in an embodiment of the present application.

[0011] Description of reference numerals: 100-carrying member, 110-first carrier plate, 111-air inlet hole, 112-bottom surface, 113-first carrier body, 120-second carrier plate, 121-surface, 122-air inlet channel, 123-first channel, 124-second channel, 125-second carrier body, 130-through hole; 200-cooling element, 210-cooling water channel, 220-third channel; 310-adhesive layer, 320-transition layer; 400-wafer; 510-adsorption electrode, 520-dielectric layer, 521-protrusion; 610-RF electrode, 620-insulating layer, 630-connecting hole; 700 - connection layer, 710 - first sub-connection layer, 720 - second sub-connection layer, 730 - connection hole. DETAILED DESCRIPTION

[0012] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0013] The bearing device disclosed in the embodiment of the present application is described in detail below through specific embodiments and application scenarios in conjunction with the accompanying drawings.

[0014] Please refer to Figure 1-Figure 4 The present application discloses a bearing device, which includes a bearing member 100, an adhesive layer 310, a transition layer 320 and a cooling member 200 which are stacked in sequence.

[0015] The carrier 100 is a basic component of the carrier device, which can provide a mounting base for other components of the carrier device, and the carrier 100 is generally used to carry the wafer 400, so as to facilitate the process chamber of the semiconductor process equipment described below to process the wafer 400. Optionally, the material of the carrier 100 may include ceramics.

[0016] A driving mechanism is usually provided in the process chamber, and a driving rod of the driving mechanism passes through a through hole 130 provided on the carrier 100 to facilitate contact with the wafer 400. Specifically, when the driving rod descends, the wafer 400 can be driven down to the carrier 100. At this time, the wafer 400 can be processed. When the driving rod rises, the wafer 400 can be driven away from the carrier 100. At this time, other transmission mechanisms of the semiconductor process equipment can transfer the processed wafer 400 out of the process chamber to facilitate the next processing step of the wafer 400.

[0017] The cooling member 200 is used to control the temperature of the wafer 400 to ensure the processing effect of the process chamber on the wafer 400. Specifically, the cooling member 200 controls the temperature of the wafer 400 through the carrier 100, that is, the carrier 100 is connected to the cooling member 200, and the two can be bonded together through the adhesive layer 310 and the transition layer 320. An annular cooling water channel 210 is provided in the cooling member 200, and the cooling water channel 210 is filled with coolant. The circulating coolant can reduce the temperature of the cooling member 200, thereby reducing the temperature of the carrier 100, and further reducing the temperature of the wafer 400.

[0018] The material of the portion of the carrier 100 in contact with the bonding layer 310 may be a ceramic material, specifically an alumina ceramic. Since the carrier 100 and the cooling member 200 are bonded via the bonding layer 310 and the transition layer 320, i.e., the transition layer 320 is disposed between the cooling member 200 and the bonding layer 310, the material of the portion of the cooling member 200 in contact with the transition layer 320 may be a metal material. Optionally, the cooling member 200 may be made of a metal, which can ensure the structural strength of the cooling member 200.

[0019] The thermal expansion coefficient of the transition layer 320 can be on the same order of magnitude as the thermal expansion coefficient of the metal material, which makes the thermal expansion coefficient of the transition layer 320 closer to the thermal expansion coefficient of the cooling member 200, thereby making the bonding between the transition layer 320 and the cooling member 200 stronger, that is, it is not easily affected by the temperature of the coolant passed into the cooling member 200.

[0020] Furthermore, the softening temperature of the transition layer 320 can be lower than the softening temperature of the adhesive layer 310, so that the transition layer 320 is easier to soften than the adhesive layer 310, that is, the transition layer 320 can be a soft transition layer. Under the conditions of heating and pressurization, the transition layer 320 can stably connect the cooling member 200 and the adhesive layer 310, and the transition layer 320 can relieve stress when connecting the cooling member 200 and the adhesive layer 310, thereby reducing the deformation of the carrier 100. At the same time, by connecting the carrier 100 and the cooling member 200 through the adhesive layer 310 and the transition layer 320, the connection stability of the carrier 100 and the cooling member 200 can be ensured, thereby ensuring the temperature control effect of the cooling member 200 on the wafer 400, so as to avoid the high temperature of the wafer 400 and cause process problems.

[0021] In the present application, since the carrier 100 and the cooling member 200 are bonded by the adhesive layer 310 and the transition layer 320, that is, the transition layer 320 is arranged between the cooling member 200 and the adhesive layer 310, and the softening temperature of the transition layer 320 is lower than the softening temperature of the adhesive layer 310, therefore, in the specific process of connecting the carrier 100 and the cooling member 200, the temperature required to soften the transition layer 320 can be lower, and the adhesive layer 310 will not be softened, so as to ensure that the adhesive layer 310 can stably bond the transition layer 320 and the carrier 100.

[0022] At the same time, since the part of the cooling member 200 that contacts the transition layer 320 is made of a metal material, and the thermal expansion coefficient of the transition layer 320 is at the same order of magnitude as the thermal expansion coefficient of the metal material, the thermal expansion coefficient of the transition layer 320 is relatively close to the thermal expansion coefficient of the cooling member 200, thereby making the transition layer 320 and the cooling member 200 more firmly bonded, that is, not easily affected by the temperature of the coolant introduced into the cooling member 200, and since the transition layer 320 has a certain thickness and softness, the transition layer 320 can relieve stress to reduce the deformation of the carrier 100, thereby avoiding affecting the bearing and adsorption effect of the carrier 100 on the wafer 400, thereby avoiding affecting the processing effect on the wafer 400. Therefore, the bearing device disclosed in the present application can solve the problem that the bearing device involved in the related art is easy to affect the processing effect on the wafer 400.

[0023] Optionally, the softening temperature of the transition layer 320 may be between 100° C. and 200° C., that is, the softening temperature of the transition layer 320 is relatively low, which may make the transition layer 320 easier to soften until it melts, thereby making it easier to bond the cooling member 200 and the bonding layer 310 .

[0024] Optionally, the cooling member 200 may be made of aluminum, that is, the metal material may be made of aluminum, which makes the cooling member 200 have good corrosion resistance and thermal conductivity, thereby making it easier to reduce the temperature of the wafer 400; the bonding layer 310 may be made of silicone, which is an easily available bonding material with good bonding stability and low cost. In specific implementation, the thermal expansion coefficient of aluminum is generally 23×10 -6 / ℃, in order to make the thermal expansion coefficient of the transition layer 320 and the thermal expansion coefficient of the metal material at the same order of magnitude, the thermal expansion coefficient of the transition layer 320 can be 10×10 -6 / ℃~70×10 -6 / ℃.

[0025] Optionally, the material of the transition layer 320 may include indium. Since the material of the cooling element 200 may be aluminum, and the thermal expansion coefficient of indium is closer to that of aluminum, that is, at this time, the thermal expansion coefficient of the transition layer 320 is more matched with that of the cooling element 200. At the same time, indium has good wettability with the bonding layer 310 and the cooling element 200 made of metal, which makes the bonding effect between the transition layer 320 and the bonding layer 310 and the cooling element 200 better, and thus the bonding between the carrier 100 and the cooling element 200 is more firmly. In addition, the cost of indium is generally low, which can reduce the overall production cost. Of course, in other embodiments, the material of the metal material, the material of the bonding layer 310, and the material of the transition layer 320 may also be other different materials.

[0026] When the carrier 100 is specifically prepared, the air inlet channel 122 can be sintered inside the carrier 100 when the carrier 100 is sintered, and the air inlet hole 111 can be processed after the sintering is completed. In this way, particles will fall into the air inlet hole 111 and the air inlet channel 122. Cleaning and purge cannot completely remove the particles. When the back-blowing gas flows in the air inlet channel 122, the particles will be brought out, thereby causing the problem of excessive particles.

[0027] Optionally, in order to avoid the problem of excessive particles, the carrier 100 may include a first carrier plate 110, a connecting layer 700, and a second carrier plate 120 stacked in sequence, that is, a first carrier plate 110 and a second carrier plate 120 separately arranged, so that the first carrier plate 110 and the second carrier plate 120 can be prepared separately, and the first carrier plate 110 and the second carrier plate 120 can be connected through the connecting layer 700. For details, please refer to Figure 2 The first carrier plate 110 is located on the side of the connecting layer 700 away from the adhesive layer 310 , and the second carrier plate 120 is located on the side of the connecting layer 700 facing the adhesive layer 310 , so that the second carrier plate 120 is closer to the adhesive layer 310 than the first carrier plate 110 .

[0028] Optionally, during the specific molding process, the connecting layer 700 can be formed on the first carrier plate 110 or on the second carrier plate 120, or a portion of the connecting layer 700 can be formed on the first carrier plate 110 and another portion of the connecting layer 700 can be formed on the second carrier plate 120. The embodiments of the present application do not impose any specific restrictions on this.

[0029] When the first carrier plate 110 and the second carrier plate 120 are specifically prepared, the first carrier plate 110 and the second carrier plate 120 can be sintered separately, and the first carrier plate 110 is used to carry the wafer 400, that is, the first carrier plate 110 is closer to the wafer 400 than the second carrier plate 120, and the second carrier plate 120 can connect the first carrier plate 110 and the cooling member 200.

[0030] In this embodiment, please refer to Figure 4 The second carrier plate 120 may be provided with an air inlet channel 122, please refer to Figure 3 The first carrier plate 110 is provided with a plurality of air inlet holes 111 penetrating the first carrier plate 110 along the thickness direction of the first carrier plate 110, and the plurality of air inlet holes 111 are arranged at intervals. At this time, particles generated when processing the air inlet holes 111 and the air inlet channels 122 can be directly removed to avoid the accumulation of particles in the air inlet holes 111 and the air inlet channels 122. It can be seen that this method of processing the air inlet holes 111 and the air inlet channels 122 is relatively simple and quick, and the processing cost is low, and the product qualification rate is high.

[0031] In addition, after the first carrier plate 110 and the second carrier plate 120 are subsequently connected through the connecting layer 700, one end of each air inlet hole 111 can be oriented one by one toward the multiple connecting holes 730 set on the connecting layer 700, so that the multiple air inlet holes 111 are connected to the air inlet channel 122 through the multiple connecting holes 730 that penetrate the connecting layer 700, and the other end of each air inlet hole 111 can be oriented toward the wafer 400. When gas enters each air inlet hole 111, each connecting hole 730 and the air inlet channel 122, since basically no particles are accumulated in the air inlet hole 111 and the air inlet channel 122, this can prevent the amount of particles in the process chamber from exceeding the standard.

[0032] At the same time, since the other end of each air inlet hole 111 is facing the wafer 400, the gas coming out of the air inlet hole 111 can reach between the first carrier plate 110 and the wafer 400. Since there is a certain gap between the first carrier plate 110 and the wafer 400, the gas can cover the entire upper surface of the first carrier plate 110. The gas can be used as a heat transfer medium with a good heat transfer effect, that is, the gas can transfer the heat of the wafer 400 to the first carrier plate 110, the connecting layer 700, the second carrier plate 120, the adhesive layer 310, the transition layer 320 and the cooling member 200 in sequence, thereby reducing the temperature of the wafer 400.

[0033] Optionally, refer to Figure 3 The air inlet holes 111 can be evenly and spaced apart along the circumference of the first carrier plate 110, and the air inlet holes 111 can be arranged close to the outer edge of the first carrier plate 110, thereby reducing the internal and external pressure difference of the carrier 100, that is, improving the uniformity of the air pressure around the carrier 100, and further improving the temperature control effect on the wafer 400.

[0034] In a specific implementation, the air intake channel 122 can be configured as an annular structure surrounding the axis of the second carrier plate 120 . The air intake channel 122 can be configured close to the edge of the second carrier plate 120 to facilitate communication with each air intake hole 111 . The above-mentioned through hole 130 can be disposed on the inner side or outer side of the air intake channel 122 .

[0035] Optionally, refer to Figure 4 The number of the air inlet channels 122 can be three, and the three air inlet channels 122 can be evenly and spaced apart along the circumference of the second carrier plate 120, so that the above-mentioned through hole 130 can be provided between two adjacent air inlet channels 122. This method of evenly dividing the air inlet channels 122 in the circumference of the second carrier plate 120 can improve the uniformity of the air flow.

[0036] In addition, in order to facilitate the introduction of gas into the air intake channel 122, the second carrier plate 120 may be provided with a first channel 123 extending along the radial direction of the second carrier plate 120, and the second carrier plate 120 may be provided with a second channel 124 penetrating the second carrier plate 120 along its thickness direction. Correspondingly, the cooling member 200 is provided with a third channel 220 penetrating the third channel 220 along its thickness direction. One end of the third channel 220 is connected to an external air intake pipe, and the other end of the third channel 220 is connected to one end of the second channel 124. The other end of the second channel 124 is connected to one end of the first channel 123, and the other end of the first channel 123 is connected to the air intake channel 122. After the first carrier plate 110 and the second carrier plate 120 are subsequently connected, the gas in the external air intake pipe can enter the air intake channel 122 through the third channel 220, the second channel 124 and the first channel 123 in sequence.

[0037] Optionally, refer to Figure 2 The connection layer 700 may include a first sub-connection layer 710 and a second sub-connection layer 720 that are stacked, and the first sub-connection layer 710 is located between the first carrier plate 110 and the second sub-connection layer 720, that is, the first sub-connection layer 710 is arranged closer to the first carrier plate 110, and the second sub-connection layer 720 is arranged closer to the second carrier plate 120. Specifically, the first carrier plate 110 has a bottom surface 112 facing the second carrier plate 120, and the second carrier plate 120 has a top surface facing the first carrier plate 110, and the first sub-connection layer 710 and the second sub-connection layer 720 may be arranged between the top surface and the bottom surface 112. The material made of the first sub-connecting layer 710 may include a first silicate glass, and the material made of the second sub-connecting layer 720 may include a second silicate glass, and the melting point of the first silicate glass is higher than the melting point of the second silicate glass, that is, the melting point of the first sub-connecting layer 710 is higher than the melting point of the second sub-connecting layer 720, and the sintering temperature of the first silicate glass is higher than the sintering temperature of the second silicate glass, that is, the sintering temperature of the first sub-connecting layer 710 is higher than the sintering temperature of the second sub-connecting layer 720.

[0038] In the specific molding process, the first sub-connection layer 710 can be formed on the first carrier plate 110 by screen printing, and the second sub-connection layer 720 can also be formed on the first sub-connection layer 710 or the second carrier plate 120 by screen printing. It should be noted that in the process of preparing the first sub-connection layer 710 and the second sub-connection layer 720, the above-mentioned connection holes 730 need to be reserved.

[0039] In this embodiment, in the process of connecting the first carrier plate 110 and the second carrier plate 120 specifically through the first sub-connection layer 710 and the second sub-connection layer 720, that is, when connecting the first sub-connection layer 710 and the second carrier plate 120 through the second sub-connection layer 720, since the melting point of the second sub-connection layer 720 is lower than the melting point of the first sub-connection layer 710, and the sintering temperature of the second sub-connection layer 720 is lower than the sintering temperature of the first sub-connection layer 710, this makes the present application when connecting the first carrier plate 110 and the second carrier plate 120. The required sintering temperature is lower than the temperature when the first sub-connection layer 710 is directly connected to the second carrier plate 120. This can avoid damage to other sintered structures on the first carrier plate 110 and the second carrier plate 120 due to excessive temperature, such as the dielectric layer 520 and the protrusion 521 described later.

[0040] Optionally, the first silicate glass may specifically include a mixture of aluminum oxide, silicon dioxide, alkaline earth metal oxides and transition metal oxides, so that the thermal expansion coefficient of the first sub-connection layer 710 is close to that of the first carrier disc 110, and the first sub-connection layer 710 can be stably arranged on the first carrier disc 110, and the bonding thermal stress between the first sub-connection layer 710 and the first carrier disc 110 is small, so that the first carrier disc 110 is not easily deformed. Since the alkaline earth metal oxide has a certain electrical insulation performance, the electrical insulation performance of the first sub-connection layer 710 can be improved, and since the transition metal oxide is conducive to the precipitation of alkaline earth metal oxide crystals in the first sub-connection layer 710, the electrical insulation performance of the first sub-connection layer 710 is further improved. Of course, in other embodiments, the first silicate glass may not include alkaline earth metal oxides and transition metal oxides.

[0041] Optionally, the second silicate glass may specifically include a mixture of aluminum oxide, silicon dioxide and the first oxide, so that the thermal expansion coefficient of the second sub-connection layer 720 is close to that of the second carrier plate 120, and the second sub-connection layer 720 can be stably arranged on the second carrier plate 120, and the bonding thermal stress between the second sub-connection layer 720 and the second carrier plate 120 is small, so that the second carrier plate 120 is not easily deformed. At the same time, since the materials made of the first sub-connection layer 710 and the second sub-connection layer 720 both include aluminum oxide and silicon dioxide, that is, the part of the material made of the second sub-connection layer 720 is the same as the part of the material made of the first sub-connection layer 710, when the first sub-connection layer 710 and the second sub-connection layer 720 are bonded, the first sub-connection layer 710 and the second sub-connection layer 720 can be made to be sintered together more easily, and the bonding stability of the two can be ensured at the same time, thereby ensuring the bonding stability of the first carrier plate 110 and the second carrier plate 120.

[0042] In this embodiment, the above-mentioned first oxide may include at least one of lead oxide, tin oxide, zinc oxide, bismuth oxide and boron oxide, that is, the first oxide is easy to obtain and has a low preparation cost. At the same time, the melting point and sintering temperature of the first oxide are low, which makes the melting point and sintering temperature of the second sub-connection layer 720 lower.

[0043] Optionally, the alkaline earth metal oxide may specifically include at least one of magnesium oxide, calcium oxide, strontium oxide and barium oxide, that is, the alkaline earth metal oxide is easy to obtain and has a low preparation cost, which makes the preparation cost of the connection layer 700 low. Of course, in other embodiments, the alkaline earth metal oxide may also include other metal oxides.

[0044] Optionally, the transition metal oxide may specifically include at least one of titanium oxide, zirconium oxide, cobalt oxide, zinc oxide and vanadium oxide, that is, the transition metal oxide is relatively easy to obtain and has a low preparation cost, which makes the preparation cost of the connection layer 700 low. Of course, in other embodiments, the transition metal oxide may also include other metal oxides.

[0045] Optionally, to ensure that the carrier 100 can stably adsorb the wafer 400, in the process of preparing the first carrier disc 110, an adsorption electrode 510 can be formed on the first carrier disc 110 to facilitate adsorption of the wafer 400. Specifically, the first carrier disc 110 may include a dielectric layer 520, an adsorption electrode 510 and a first carrier body 113 stacked in sequence, the dielectric layer 520 and the adsorption electrode 510 are located on the side of the first carrier body 113 away from the connection layer 700, the dielectric layer 520 can cover the adsorption electrode 510, the adsorption electrode 510 can be a sheet-shaped adsorption electrode 510 prepared in advance, and the present application can directly sinter the adsorption electrode 510 on the side of the first carrier body 113 facing the wafer 400. Optionally, the material of the adsorption electrode 510 can be silver.

[0046] In another embodiment, the present application can prepare the adsorption electrode 510 on the side of the first carrier body 113 facing the wafer 400 by screen printing. Specifically, the adsorption electrode 510 can be formed by printing silver paste multiple times, and after each silver paste is applied, high-temperature sintering is performed once, which can ensure the bonding stability between each layer of silver paste and the bonding stability between the adsorption electrode 510 and the first carrier body 113. This method of preparing the adsorption electrode 510 is relatively simple and has a high pass rate. It should be noted that in the process of preparing the adsorption electrode 510, the above-mentioned air inlet 111 needs to be reserved.

[0047] Optionally, the adsorption electrode 510 may be a ring electrode, that is, the adsorption electrode 510 may be composed of a plurality of concentric rings, and in the radial direction of the plurality of concentric rings, the plurality of concentric rings are concentric rings with alternating positive and negative electrodes. After the positive and negative adsorption voltages are loaded on the positive and negative electrodes respectively, an electrostatic field will be generated, and charges of opposite electrical properties will be induced on the wafer 400 to generate an attractive force between the adsorption electrode 510 and the wafer 400, thereby adsorbing the wafer 400 on the carrier 100. In addition, since one of the two adjacent concentric rings can be used as a positive electrode ring and the other can be used as a negative electrode ring, it can be seen that the positive electrode ring and the negative electrode ring are close to each other, and after the process is completed, the positive electrode ring and the negative electrode ring are easily neutralized, and then the attractive force loaded on the wafer 400 can disappear quickly, so that the wafer 400 can be quickly removed.

[0048] The above-mentioned dielectric layer 520 can better protect the adsorption electrode 510, because the dielectric layer 520 covers the adsorption electrode 510, that is, the dielectric layer 520 can completely wrap the adsorption electrode 510 to prevent the adsorption electrode 510 from being exposed, and the wafer 400 can be placed on the dielectric layer 520. Optionally, the dielectric layer 520 can also be made by screen printing, which can well control the thickness of the dielectric layer 520. The thickness of the dielectric layer 520 can be about 0.1mm. Since the thickness of the dielectric layer 520 is easier to control, that is, the thickness consistency of the dielectric layer 520 is better, which makes the adsorption force of the adsorption electrode 510 on the wafer 400 uniform. It should be noted that in the specific preparation process of the dielectric layer 520, the above-mentioned air inlet 111 also needs to be reserved.

[0049] Optionally, the material of the dielectric layer 520 may include a first silicate glass, that is, the material of the dielectric layer 520 is the same as the material of the first sub-connection layer 710. Since the first silicate glass includes aluminum oxide and silicon dioxide, that is, the material of the dielectric layer 520 may include aluminum oxide and silicon dioxide, the thermal expansion coefficient of the dielectric layer 520 is close to the thermal expansion coefficient of the first carrier body 113, and the dielectric layer 520 can be stably arranged on the first carrier body 113, so as to stably cover the adsorption electrode 510. The volume resistivity of the dielectric layer 520 prepared by this material is usually large, the electrical insulation performance is good and the withstand voltage is high, and the dielectric constant of the dielectric layer 520 can be between 9 and 10. Since the electrical insulation performance of the dielectric layer 520 is good, the dielectric layer 520 protects the adsorption electrode 510 while not affecting the adsorption effect of the adsorption electrode 510 on the wafer 400, that is, this arrangement makes the adsorption effect of the adsorption electrode 510 on the wafer 400 better. Optionally, the volume resistivity of the dielectric layer 520 is generally greater than 10 14 Ohm·cm, insulation strength greater than 25kV / mm, dielectric loss less than 2×10 -3 .

[0050] At the same time, since the first silicate glass may also include the above-mentioned alkaline earth metal oxide and transition metal oxide, that is, the material made of the dielectric layer 520 may also include alkaline earth metal oxide and transition metal oxide, this may further improve the electrical insulation performance of the dielectric layer 520, and the transition metal oxide is conducive to the precipitation of alkaline earth metal oxide crystals in the dielectric layer 520, thereby further improving the electrical insulation performance of the dielectric layer 520. Of course, the material made of the dielectric layer 520 may not include the first silicate glass.

[0051] Optionally, refer to Figure 2In order to facilitate the dielectric layer 520 to support the wafer 400, at least two protrusions 521 are protruded from the dielectric layer 520 and are spaced apart from each other. The wafer 400 can be placed on the protrusions 521. The protrusions 521 can increase the gap between the area of ​​the dielectric layer 520 other than the protrusions 521 and the wafer 400, so that more gas can be filled between the wafer 400 and the dielectric layer 520. Since the gas can be used as a heat transfer medium, that is, more gas has a better heat transfer effect, which has a more obvious cooling effect on the wafer 400.

[0052] Optionally, the material made of the dielectric layer 520 may also include at least one of bismuth oxide and boron oxide. Both bismuth oxide and boron oxide are conducive to reducing the sintering temperature, which can avoid deformation of the carrier 100 at high temperature due to excessive sintering temperature during the preparation of the dielectric layer 520. Of course, the material made of the dielectric layer 520 may not include bismuth oxide and boron oxide.

[0053] Optionally, in the material making the above-mentioned dielectric layer 520, the mass percentage of aluminum oxide can be between 10 and 40, the mass percentage of silicon dioxide can be between 20 and 40, the mass percentage of alkaline earth metal oxide can be between 20 and 40, the mass percentage of transition metal oxide can be between 20 and 40, and the mass percentages of bismuth oxide and boron oxide can be between 0 and 10. In order to improve the process effect on the wafer 400, a radio frequency electrode 610 may be provided on the carrier 100. The present application adjusts the bias voltage loaded on the wafer 400 by adjusting the power of the radio frequency electrode 610, thereby adjusting the incident angle of ions on the wafer 400, thereby improving the process effect on the wafer 400. Optionally, the radio frequency electrode 610 may be loaded on the above-mentioned adsorption electrode 510, that is, the above-mentioned adsorption electrode 510 can not only adsorb the wafer 400, but also serve as the radio frequency electrode 610.

[0054] In another embodiment, please refer to Figure 2, the RF electrode 610 and the adsorption electrode 510 can be separately arranged to avoid other adverse effects between the two. Specifically, the second carrier disc 120 may include an insulating layer 620, an RF electrode 610 and a second carrier body 125 stacked in sequence. In the process of forming the second carrier body 125, the air inlet channel 122 may be formed on a surface 121 of the second carrier body 125 facing the RF electrode 610. The insulating layer 620 and the RF electrode 610 are located on the side of the second carrier body 125 facing the connection layer 700, that is, on the surface 121. The second sub-connection layer 720 connects the first sub-connection layer 710 and the insulating layer 620. The insulating layer 620 covers the RF electrode 610. The RF electrode 610 may also be formed on the second carrier body 125 by screen printing. Optionally, the RF electrode 610 may be directly formed on the second carrier body 125, specifically, directly formed on the surface 121, to ensure the bonding stability between the RF electrode 610 and the second carrier body 125. It should be noted that during the preparation of the insulating layer 620 and the RF electrode 610 , a connecting hole 630 needs to be reserved on the insulating layer 620 and the RF electrode 610 so that the air inlet hole 111 can be connected to the air inlet channel 122 through the connecting hole 730 and the connecting hole 630 .

[0055] Optionally, the shape of the RF electrode 610 may be a double D shape, so that the RF electrode 610 can form a relatively uniform magnetic field, so as to improve the process effect on the wafer 400. Of course, the embodiment of the present application does not impose any specific limitation on this.

[0056] The insulating layer 620 can better protect the RF electrode 610. Since the insulating layer 620 covers the RF electrode 610, that is, the insulating layer 620 can completely wrap the RF electrode 610 to prevent the RF electrode 610 from being exposed. The insulating layer 620 can be made by screen printing, which can well control the thickness of the insulating layer 620.

[0057] Optionally, the material of the insulating layer 620 may include a first silicate glass, that is, the material of the insulating layer 620 is the same as the material of the first sub-connecting layer 710 and the material of the dielectric layer 520, so that the thermal expansion coefficient of the insulating layer 620 is close to the thermal expansion coefficient of the second carrier body 125, and then the insulating layer 620 can be stably arranged on the second carrier body 125, so as to stably cover the RF electrode 610. It can be seen that the insulating layer 620 can improve the overall electrical insulation while protecting the RF electrode 610.

[0058] Optionally, the thickness of the first carrier plate 110 may be greater than or equal to the thickness of the second carrier plate 120 .

[0059] In another embodiment, the thickness of the first carrier plate 110 is smaller than the thickness of the second carrier plate 120 , which makes the RF electrode 610 closer to the wafer 400 , thereby achieving better coupling effect with the wafer 400 . That is, this setting method can more accurately adjust the ion incident angle, thereby improving the process effect on the wafer 400 .

[0060] In addition, during the process of processing the wafer 400, when the temperature of the wafer 400 increases and the temperature of the wafer 400 is higher than that of the carrier 100, the wafer 400 can transfer the heat to the above-mentioned dielectric layer 520, the adsorption electrode 510, the first carrier body 113, the first sub-connection layer 710, the second sub-connection layer 720, the insulating layer 620, the RF electrode 610, the second carrier body 125, the adhesive layer 310, the transition layer 320 and the cooling member 200 in sequence through the above-mentioned gas. The coolant in the above-mentioned cooling water channel 210 of the cooling member 200 can take away the heat, thereby achieving a temperature control effect on the wafer 400.

[0061] Optionally, the present application also discloses a semiconductor process equipment, including a process chamber and the carrying device mentioned above, wherein the carrying device is arranged in the process chamber, and the carrying device is used to carry the wafer 400, and the carrying device has adsorption, RF loading and cooling functions, which can improve the processing effect on the wafer 400.

[0062] Optionally, refer to Figures 5 to 7 The present application also discloses a method for preparing a carrier device, the method comprising: S100, preparing the carrier 100 and the cooling member 200 respectively.

[0063] Specifically, the present application can prepare the carrier 100 and the cooling member 200 separately, the material of the cooling member 200 facing the carrier 100 is metal material, and the material of the carrier 100 facing the cooling member 200 is ceramic material.

[0064] S200 , forming an adhesive layer 310 and a transition layer 320 between the carrier 100 and the cooling member 200 , and bonding the carrier 100 , the adhesive layer 310 , the transition layer 320 and the cooling member 200 together through a bonding process.

[0065] Specifically, in the process of assembling the carrier 100 and the cooling member 200, the present application can form an adhesive layer 310 and a transition layer 320 between the carrier 100 and the cooling member 200, and bond the carrier 100, the adhesive layer 310, the transition layer 320 and the cooling member 200 together through a bonding process. Since the manufacturing material of the cooling member 200 usually includes metal, the manufacturing material of the part of the cooling member 200 that contacts the transition layer 320 is a metal material, and the thermal expansion coefficient of the transition layer 320 is on the same order of magnitude as the thermal expansion coefficient of the metal material, which makes the thermal expansion coefficient of the transition layer 320 closer to the thermal expansion coefficient of the cooling member 200, thereby making the bonding between the transition layer 320 and the cooling member 200 more firm, that is, it is not easily affected by the temperature of the coolant passed into the cooling member 200.

[0066] At the same time, since the softening temperature of the transition layer 320 is lower than the softening temperature of the adhesive layer 310, the transition layer 320 is easier to soften than the adhesive layer 310, that is, the transition layer 320 can be a soft transition layer. Under heating and pressurization conditions, the transition layer 320 can stably connect the cooling part 200 and the adhesive layer 310, and the transition layer 320 can relieve stress when connecting the cooling part 200 and the adhesive layer 310, thereby reducing the deformation of the carrier 100.

[0067] It can be seen that the bonding of the carrier 100 and the cooling member 200 through the bonding layer 310 and the transition layer 320 disclosed in the embodiment of the present application can make the bonding between the carrier 100 and the cooling member 200 more firm and not easily affected by the temperature of the coolant passed into the cooling member 200. In addition, since the transition layer 320 has a certain thickness and softness, the transition layer 320 can relieve stress to reduce the deformation of the carrier 100, thereby avoiding affecting the bearing and adsorption effect of the carrier 100 on the wafer 400, and further avoiding affecting the processing effect on the wafer 400.

[0068] Optionally, the metal material may include aluminum, which makes the cooling member 200 have better corrosion resistance and thermal conductivity, thereby making it easier to reduce the temperature of the wafer 400; the bonding layer 310 may be made of silica gel, which is an easily available bonding material with good bonding stability and low cost. In a specific implementation, the thermal expansion coefficient of aluminum is generally 23×10 -6 / ℃, in order to make the thermal expansion coefficient of the transition layer 320 and the thermal expansion coefficient of the metal material at the same order of magnitude, the thermal expansion coefficient of the transition layer 320 can be 10×10 -6 / ℃~70×10 -6 / ℃.

[0069] Optionally, the material of the transition layer 320 may include indium. Since the material of the cooling element 200 may be aluminum, and the thermal expansion coefficient of indium is closer to that of aluminum, that is, at this time, the thermal expansion coefficient of the transition layer 320 is more matched with that of the cooling element 200. At the same time, indium has good wettability with the bonding layer 310 and the cooling element 200 made of metal, which makes the bonding effect between the transition layer 320 and the bonding layer 310 and the cooling element 200 better, and thus the bonding between the carrier 100 and the cooling element 200 is more firmly. In addition, the cost of indium is generally low, which can reduce the overall production cost. Of course, in other embodiments, the material of the metal material, the material of the bonding layer 310, and the material of the transition layer 320 may also be other different materials.

[0070] Optionally, the prepared carrier 100 in the above step S100 may specifically be an integrally formed carrier 100 .

[0071] In another embodiment, the preparation of the carrier 100 in the above step S100 may specifically include: S110, prepare a first carrier plate 110 and a second carrier plate 120 respectively, wherein the second carrier plate 120 is formed with an air inlet channel 122, and the first carrier plate 110 is formed with a plurality of air inlet holes 111 penetrating the first carrier plate 110 along a thickness direction of the first carrier plate 110.

[0072] Specifically, the present application can prepare the first carrier plate 110 and the second carrier plate 120 separately, that is, the carrier 100 can include a first carrier plate 110 and a second carrier plate 120 that are separately arranged, which can facilitate the subsequent provision of an air inlet hole 111 on the first carrier plate 110 and the subsequent formation of an air inlet channel 122 during the process of molding the second carrier plate 120.

[0073] Specifically, in the process of preparing the first carrier disc 110, a plurality of air inlet holes 111 penetrating the first carrier disc 110 along the thickness direction of the first carrier disc 110 need to be formed on the first carrier disc 110, and the plurality of air inlet holes 111 are used to ventilate the wafer 400 so as to reduce the temperature of the wafer 400. Exemplarily, preparing the first carrier disc 110 may include: first sintering to form the first carrier body 113, and processing the plurality of air inlet holes 111 penetrating the first carrier body 113 along the thickness direction thereof on the first carrier body 113, and then printing the adsorption electrode 510 on the side of the first carrier body 113 facing the wafer 400, and coating the adsorption electrode 510 with a dielectric layer 520, the dielectric layer 520 can protect the adsorption electrode 510, and finally sintering the whole formed by the first carrier body 113, the adsorption electrode 510 and the dielectric layer 520, so as to form the first carrier disc 110. It should be noted that, in the process of preparing the adsorption electrode 510 and the dielectric layer 520 , the air inlet hole 111 needs to be reserved.

[0074] In the process of preparing the second carrier disc 120, an air inlet channel 122 needs to be formed on the second carrier disc 120. When the first carrier disc 110 and the second carrier disc 120 are subsequently connected, the air inlet channel 122 needs to be connected to the plurality of air inlet holes 111, so that an external gas source can input gas to the plurality of air inlet holes 111 through the air inlet channel 122. Exemplarily, the preparation of the second carrier disc 120 may include: first sintering to form the second carrier body 125, and in the process of forming the second carrier body 125, the air inlet channel 122 is formed on the surface 121 of the second carrier body 125 facing the first carrier disc 110, then printing the RF electrode 610 on the surface 121, and coating the RF electrode 610 with an insulating layer 620, the insulating layer 620 can protect the RF electrode 610, and finally sintering the whole formed by the second carrier body 125, the RF electrode 610 and the insulating layer 620, so as to form the second carrier disc 120. It should be noted that, during the preparation of the RF electrode 610 and the insulating layer 620 , a connecting hole 630 needs to be reserved on the insulating layer 620 and the RF electrode 610 , so that the air inlet hole 111 can be connected to the air inlet channel 122 through the connecting hole 630 .

[0075] S120 , forming a connection layer 700 between the first carrier plate 110 and the second carrier plate 120 , and connecting the first carrier plate 110 , the connection layer 700 and the second carrier plate 120 through a sintering process.

[0076] Specifically, in the process of connecting the first carrier plate 110 and the second carrier plate 120, the connection can be made through the connection layer 700, that is, the connection layer 700 is formed between the first carrier plate 110 and the second carrier plate 120. The connection layer 700 can be formed on the first carrier plate 110 or on the second carrier plate 120, and the embodiment of the present application does not impose specific restrictions on this. The present application can connect the first carrier plate 110, the connection layer 700 and the second carrier plate 120 together through a sintering process to form a carrier 100. It should be noted that the above-mentioned multiple air inlet holes 111 can be connected to the air inlet channel 122 through the multiple connection holes 730 and the connecting hole 630 provided on the connection layer 700.

[0077] Optionally, the step S120, i.e., forming a connection layer 700 between the first carrier plate 110 and the second carrier plate, and connecting the first carrier plate 110, the connection layer 700 and the second carrier plate 120 by a sintering process, may specifically include: S121 , forming a first sub-connection layer 710 on a side of the first carrier plate 110 facing the second carrier plate 120 , and the material of the first sub-connection layer 710 may include a first silicate glass.

[0078] S122. A second sub-connection layer 720 is formed on the side of the second carrier plate 120 facing the first carrier plate 110. The material of the second sub-connection layer 720 includes a second silicate glass, and the melting point of the first silicate glass is higher than the melting point of the second silicate glass, and the sintering temperature of the first silicate glass is higher than the sintering temperature of the second silicate glass.

[0079] In this embodiment, the connection layer 700 may include a first sub-connection layer 710 and a second sub-connection layer 720. Since the melting point of the first silicate glass is higher than that of the second silicate glass, the sintering temperature of the first silicate glass is higher than that of the second silicate glass. This allows the present application to specifically connect the first sub-connection layer 710 and the second sub-connection layer 720, that is, when specifically connecting the first carrier plate 110 and the second carrier plate 120, the required sintering temperature is lower than the temperature when the first sub-connection layer 710 is directly connected to the second carrier plate 120. This can avoid damage to other sintered structures on the first carrier plate 110 and the second carrier plate 120 due to excessive temperature, such as the dielectric layer 520 and the protrusion 521 described above. Of course, in other embodiments, the connection layer 700 may not include the second sub-connection layer 720.

[0080] Optionally, in the specific preparation process, the above-mentioned step S121 may be before step S122, or, step S121 may be after step S122, or, step S121 and step S122 may be performed simultaneously, that is, the embodiment of the present application does not specifically limit the order of step S121 and step S122.

[0081] S123 , connecting the first carrier plate 110 , the first sub-connection layer 710 , the second sub-connection layer 720 and the second carrier plate 120 by using a sintering process.

[0082] Specifically, the present application can use a sintering process to connect the first carrier plate 110, the first sub-connection layer 710, the second sub-connection layer 720 and the second carrier plate 120, specifically by sintering the first sub-connection layer 710 and the second sub-connection layer 720 to achieve the effect of connecting the first carrier plate 110 and the second carrier plate 120.

[0083] In this embodiment, when specifically connecting the first carrier plate 110 and the second carrier plate 120, the present application can print the first silicate glass on the bottom surface 112 of the first carrier plate 110 facing the second carrier plate 120, and print the second silicate glass on the top surface of the second carrier plate 120 facing the first carrier plate 110, that is, the side of the insulating layer 620 facing the first carrier plate 110, and then sinter the whole formed by the first carrier plate 110, the first silicate glass, the second silicate glass and the second carrier plate 120, so as to achieve the effect of connecting the first carrier plate 110 and the second carrier plate 120 to form the carrier 100.

[0084] Optionally, the first silicate glass may specifically include a mixture of aluminum oxide, silicon dioxide, alkaline earth metal oxides and transition metal oxides, so that the thermal expansion coefficient of the first sub-connection layer 710 is close to that of the carrier 100, and the first sub-connection layer 710 can be stably arranged on the first carrier disc 110, and the bonding thermal stress between the first sub-connection layer 710 and the first carrier disc 110 is small, so that the carrier 100 is not easily deformed. Since the alkaline earth metal oxide has a certain electrical insulation performance, the electrical insulation performance of the first sub-connection layer 710 can be improved, and since the transition metal oxide is conducive to the precipitation of alkaline earth metal oxide crystals in the first sub-connection layer 710, the electrical insulation performance of the first sub-connection layer 710 is further improved. Of course, in other embodiments, the first silicate glass may not include alkaline earth metal oxides and transition metal oxides.

[0085] Optionally, the second silicate glass may specifically include a mixture of aluminum oxide, silicon dioxide and the first oxide, so that the thermal expansion coefficient of the second sub-connection layer 720 is close to that of the carrier 100, and the second sub-connection layer 720 can be stably arranged on the second carrier plate 120, and the bonding thermal stress between the second sub-connection layer 720 and the second carrier plate 120 is small, so that the carrier 100 is not easily deformed. At the same time, since the materials made of the first sub-connection layer 710 and the second sub-connection layer 720 both include aluminum oxide and silicon dioxide, that is, the part of the material made of the second sub-connection layer 720 is the same as the part of the material made of the first sub-connection layer 710, when the first sub-connection layer 710 and the second sub-connection layer 720 are sintered, the first sub-connection layer 710 and the second sub-connection layer 720 can be made to sinter together more easily, and the bonding stability of the two can be ensured at the same time, thereby ensuring the bonding stability of the first carrier plate 110 and the second carrier plate 120.

[0086] In this embodiment, the first oxide may include at least one of lead oxide, tin oxide, zinc oxide, bismuth oxide and boron oxide, that is, the first oxide is easy to obtain and has a low preparation cost, and the melting point and sintering temperature of the first oxide are both low, which makes the melting point and sintering temperature of the second sub-connecting layer 720 both low. Of course, in other embodiments, the second silicate glass may not include the first oxide.

[0087] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0088] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A carrying device, characterized in that: The bearing device comprises a bearing member (100), an adhesive layer (310), a transition layer (320), and a cooling member (200) which are stacked in sequence. The carrier (100) is used to carry a wafer (400), and the carrier (100) and the cooling element (200) are bonded together via the bonding layer (310) and the transition layer (320); The material of the portion of the carrier (100) in contact with the adhesive layer (310) is a ceramic material, and the material of the portion of the cooling element (200) in contact with the transition layer (320) is a metal material; The thermal expansion coefficient of the transition layer (320) is on the same order of magnitude as the thermal expansion coefficient of the metal material, and the softening temperature of the transition layer (320) is lower than the softening temperature of the bonding layer (310).

2. The carrying device according to claim 1, characterized in that: The softening temperature of the transition layer (320) is between 100°C and 200°C.

3. The carrying device according to claim 1, characterized in that: The metal material includes aluminum, the material made of the bonding layer (310) includes silica gel, and the material made of the transition layer (320) includes indium.

4. The carrying device according to claim 1, characterized in that: The carrier (100) comprises a first carrier disc (110), a connecting layer (700), and a second carrier disc (120) which are stacked in sequence, wherein the first carrier disc (110) is located on a side of the connecting layer (700) away from the adhesive layer (310), and the second carrier disc (120) is located on a side of the connecting layer (700) facing the adhesive layer (310); An air intake channel (122) is provided on the second carrying plate (120); The first carrier plate (110) is provided with a plurality of air inlet holes (111) penetrating the first carrier plate (110) along a thickness direction of the first carrier plate (110); The plurality of air inlet holes (111) are in communication with the air inlet channel (122) via a plurality of connection holes (730) penetrating the connection layer (700).

5. The carrying device according to claim 4, characterized in that: The connection layer (700) comprises a first sub-connection layer (710) and a second sub-connection layer (720) which are stacked; the first sub-connection layer (710) is located between the first carrier plate (110) and the second sub-connection layer (720); The material of the first sub-connecting layer (710) includes a first silicate glass, and the material of the second sub-connecting layer (720) includes a second silicate glass, and the melting point of the first silicate glass is higher than the melting point of the second silicate glass, and the sintering temperature of the first silicate glass is higher than the sintering temperature of the second silicate glass.

6. The carrying device according to claim 5, characterized in that: The first silicate glass comprises a mixture of aluminum oxide, silicon dioxide, alkaline earth metal oxides and transition metal oxides; The second silicate glass includes a mixture of aluminum oxide, silicon dioxide, and a first oxide, wherein the first oxide includes at least one of lead oxide, tin oxide, zinc oxide, bismuth oxide, and boron oxide.

7. The carrying device according to claim 6, characterized in that: The alkaline earth metal oxide includes at least one of magnesium oxide, calcium oxide, strontium oxide, and barium oxide.

8. The carrying device according to claim 6, characterized in that: The transition metal oxide includes at least one of titanium oxide, zirconium oxide, cobalt oxide, zinc oxide, and vanadium oxide.

9. The carrying device according to claim 5, characterized in that: The first carrier plate (110) comprises a dielectric layer (520), an adsorption electrode (510) and a first carrier body (113) which are stacked in sequence, the dielectric layer (520) and the adsorption electrode (510) being located on a side of the first carrier body (113) away from the connection layer (700), and the dielectric layer (520) covering the adsorption electrode (510); The dielectric layer (520) is made of a material including the first silicate glass.

10. The carrying device according to claim 5, characterized in that: The second carrier plate (120) comprises an insulating layer (620), a radio frequency electrode (610), and a second carrier body (125) which are stacked in sequence, the insulating layer (620) and the radio frequency electrode (610) being located on a side of the second carrier body (125) facing the connection layer (700), the second sub-connection layer (720) connecting the first sub-connection layer (710) and the insulating layer (620), and the insulating layer (620) covering the radio frequency electrode (610); The insulating layer (620) is made of a material including the first silicate glass.

11. A semiconductor process equipment, characterized in that: It comprises a process chamber and the carrying device according to any one of claims 1 to 10, wherein the carrying device is arranged in the process chamber.

12. A method for preparing a carrying device, characterized in that: The preparation method comprises: Prepare a carrier (100) and a cooling member (200) respectively; An adhesive layer (310) and a transition layer (320) are formed between the carrier (100) and the cooling member (200), and the carrier (100), the adhesive layer (310), the transition layer (320) and the cooling member (200) are bonded together through a bonding process; wherein: The material of the portion of the cooling member (200) in contact with the transition layer (320) is a metal material, the material of the portion of the supporting member (100) in contact with the bonding layer (310) is a ceramic material, the thermal expansion coefficient of the transition layer (320) is on the same order of magnitude as the thermal expansion coefficient of the metal material, and the softening temperature of the transition layer (320) is lower than the softening temperature of the bonding layer (310).

13. The preparation method according to claim 12, characterized in that: The metal material includes aluminum, the material made of the bonding layer (310) includes silica gel, and the material made of the transition layer (320) includes indium.

14. The preparation method according to claim 12, characterized in that: The method of preparing a carrier (100) comprises: A first carrier plate (110) and a second carrier plate (120) are prepared respectively, wherein an air inlet channel (122) is formed on the second carrier plate (120), and a plurality of air inlet holes (111) are formed on the first carrier plate (110) and penetrate the first carrier plate (110) along a thickness direction of the first carrier plate (110); A connection layer (700) is formed between the first carrier plate (110) and the second carrier plate (120), and the first carrier plate (110), the connection layer (700) and the second carrier plate (120) are connected through a sintering process.

15. The preparation method according to claim 14, characterized in that: The method comprises forming a connection layer (700) between the first carrier plate (110) and the second carrier plate, and connecting the first carrier plate (110), the connection layer (700) and the second carrier plate (120) through a sintering process, comprising: A first sub-connection layer (710) is formed on a side of the first carrier plate (110) facing the second carrier plate (120), wherein the material of the first sub-connection layer (710) includes a first silicate glass; A second sub-connection layer (720) is formed on a side of the second carrier plate (120) facing the first carrier plate (110), wherein the material of the second sub-connection layer (720) comprises a second silicate glass, wherein the melting point of the first silicate glass is higher than the melting point of the second silicate glass, and the sintering temperature of the first silicate glass is higher than the sintering temperature of the second silicate glass; The first carrier plate (110), the first sub-connection layer (710), the second sub-connection layer (720) and the second carrier plate (120) are connected by a sintering process.

16. The preparation method according to claim 15, characterized in that: The first silicate glass comprises a mixture of aluminum oxide, silicon dioxide, alkaline earth metal oxides and transition metal oxides; The second silicate glass includes a mixture of aluminum oxide, silicon dioxide, and a first oxide, wherein the first oxide includes at least one of lead oxide, tin oxide, zinc oxide, bismuth oxide, and boron oxide.

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