Lithography correction method, device, equipment and medium

Abstract

The invention relates to the technical field of semiconductor lithography, in particular to a lithography correction method, device and equipment and a medium. Performing experimental lithography on the pressure-sensitive wafer according to the to-be-calibrated instruction; the surface of the pressure-sensitive wafer comprises a pressure sensor array; receiving liquid field pressure data from the pressure sensing wafer; and correcting the instruction to be corrected according to the liquid field pressure data to obtain a correction instruction. Through the pressure sensing wafer with the surface provided with the pressure sensor array, the liquid field pressure in the execution process of the to-be-calibrated instruction is monitored in the whole process, the liquid field pressure data obtained through feedback comprise the pressure distribution of each scanning point position, the subsequent to-be-calibrated instruction is corrected, the pressure uniformity of each scanning point position is improved, and the accuracy of the to-be-calibrated instruction is improved. And disturbance force caused by uneven liquid field pressure is reduced, a direct correction basis is provided, the correction efficiency in the research and development process is greatly improved, and the research and development cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor lithography technology, and in particular to a lithography correction method, device, equipment and medium. Background Art

[0002] Photolithography (also known as lithography) is an important process in integrated circuit manufacturing. Different from traditional dry lithography technology, immersion lithography technology needs to rely on a liquid field to complete, which is also the core difference between the two. The stability of the liquid field pressure has a great impact on imaging and overlay. The industry hopes that the liquid field of immersion lithography technology is always in a stable and controllable state. Please refer to Figure 1 , Figure 1 For the structural schematic diagram around the liquid field, the figure points out the positional relationship between the liquid field and the wafer in immersion lithography technology.

[0003] At present, the mainstream method for controlling the liquid field of immersion lithography technology in the market is to install pressure / flow sensors at the inlet and outlet of the liquid field pipeline to detect the relevant parameter values of the flow field and maintain its stability. However, obviously, the stability of the pressure / flow at the inlet and outlet of the liquid field pipeline does not mean the stability of the pressure of the liquid field itself and excellent uniformity. Another method is to simply obtain the pressure distribution in the liquid field through the overlay results of pre-overlay and the focus plane calibration during the overlay process, and then make adjustments. This method takes a long time and occupies too much computing resources, and the cost is too high in actual use.

[0004] Therefore, how to provide a method for stabilizing the liquid field in the immersion lithography process with low cost, and then improving the quality of the lithography process, is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of the present invention is to provide a lithography correction method, device, equipment and medium to solve the problems of poor process quality caused by poor stability of the liquid field in the existing immersion lithography technology and high calibration cost at the same time.

[0006] To solve the above technical problems, the present invention provides a lithography correction method, including:

[0007] Obtain a calibration instruction to be corrected;

[0008] Perform experimental lithography on the pressure-sensitive wafer according to the calibration instruction to be corrected; the surface of the pressure-sensitive wafer includes a pressure sensor array;

[0009] Receive liquid field pressure data from the pressure-sensitive wafer;

[0010] Correct the calibration instruction to be corrected according to the liquid field pressure data to obtain a calibration instruction.

[0011] Optionally, in the lithography correction method, the step of correcting the instruction to be corrected according to the liquid field pressure data to obtain a corrected instruction includes:

[0012] Correcting the scanning speed corresponding to each scanning point in the instruction to be corrected according to the liquid field pressure data to obtain a corrected instruction.

[0013] Optionally, in the lithography correction method, the step of correcting the scanning speed corresponding to each scanning point in the instruction to be corrected according to the liquid field pressure data to obtain a corrected instruction includes:

[0014] Determining, according to the liquid field pressure data, the scanning speed of the scanning point when the pressure uniformity of each scanning point reaches a preset existence threshold as the limit scanning speed;

[0015] Replacing the scanning speed corresponding to each scanning point in the instruction to be corrected with the corresponding limit scanning speed to obtain a corrected instruction.

[0016] Optionally, in the lithography correction method, after receiving the liquid field pressure data, it further includes:

[0017] Dividing the scanning points in the instruction to be corrected into multiple speed regions according to the liquid field pressure data;

[0018] Correspondingly, after determining, according to the liquid field pressure data, the scanning speed of the scanning point when the pressure uniformity of each scanning point reaches a preset existence threshold as the limit scanning speed, it further includes:

[0019] Determining the representative scanning speed corresponding to each speed region according to the limit scanning speeds of the scanning points in each speed region;

[0020] Correspondingly, the step of replacing the scanning speed corresponding to each scanning point in the instruction to be corrected with the corresponding limit scanning speed to obtain a corrected instruction includes:

[0021] Replacing the scanning speed corresponding to the scanning points in each speed region in the instruction to be corrected with the corresponding representative scanning speed to obtain a corrected instruction.

[0022] Optionally, in the lithography correction method, the step of dividing the scanning points in the instruction to be corrected into multiple speed regions according to the liquid field pressure data includes:

[0023] Dividing the scanning points in the instruction to be corrected into multiple speed regions according to the liquid field pressure data; wherein, the difference between the maximum pressure and the minimum pressure of the scanning points in a single speed region does not exceed a preset classification threshold.

[0024] Optionally, in the lithography correction method, determining the representative scanning speed corresponding to each of the speed regions according to the limit scanning speed of the scanning points in each of the speed regions includes:

[0025] Calculating the average value of the limit scanning speeds of all the scanning points in each of the speed regions as the representative scanning speed corresponding to each of the speed regions.

[0026] Optionally, in the lithography correction method, after receiving the liquid field pressure data from the piezoresistive wafer, it further includes:

[0027] Determining the immersion head correction parameter according to the liquid field pressure data.

[0028] A lithography correction device includes:

[0029] An acquisition module for acquiring an instruction to be calibrated;

[0030] An experiment module for performing experimental lithography on a piezoresistive wafer according to the instruction to be calibrated; the surface of the piezoresistive wafer includes a pressure sensor array;

[0031] A receiving module for receiving liquid field pressure data from the piezoresistive wafer;

[0032] A correction module for correcting the instruction to be calibrated according to the liquid field pressure data to obtain a calibrated instruction.

[0033] A lithography correction equipment includes:

[0034] A memory for storing a computer program;

[0035] A processor for implementing the steps of any one of the above lithography correction methods when executing the computer program.

[0036] A computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of any one of the above lithography correction methods are implemented.

[0037] The lithography correction method provided by the present invention includes: acquiring an instruction to be calibrated; performing experimental lithography on a piezoresistive wafer according to the instruction to be calibrated; the surface of the piezoresistive wafer includes a pressure sensor array; receiving liquid field pressure data from the piezoresistive wafer; correcting the instruction to be calibrated according to the liquid field pressure data to obtain a calibrated instruction.

[0038] The present invention realizes the full - process monitoring of the liquid - field pressure during the execution of the instruction to be calibrated through a pressure - sensitive wafer with a pressure - sensor array on its surface. The liquid - field pressure data obtained by feedback includes the pressure distribution at each scanning point, providing a direct basis for correcting the instruction to be calibrated, improving the pressure uniformity at each scanning point, and reducing the disturbing force caused by the non - uniform liquid - field pressure, greatly improving the correction efficiency during the R & D process and reducing the R & D cost. The present invention also provides a lithography correction method, device, equipment, and medium having the above - mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0040] Figure 1 It is a schematic diagram around the liquid field in immersion lithography technology;

[0041] Figure 2 It is a schematic flow chart of a specific implementation manner of the lithography correction method provided by the present invention;

[0042] Figure 3 It is a schematic structural diagram of a pressure - sensitive wafer of a specific implementation manner of the lithography correction method provided by the present invention;

[0043] Figure 4 It is a schematic flow chart of another specific implementation manner of the lithography correction method provided by the present invention;

[0044] Figure 5 It is a block diagram of a specific implementation manner of the lithography correction device provided by the present invention.

[0045] In the figure, it includes 01 - pressure sensor unit, 100 - acquisition module, 200 - experiment module, 300 - receiving module, 400 - correction module. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0046] In order to enable those skilled in the art to better understand the solution of the present invention, the following will further describe the present invention in detail with reference to the drawings and specific implementation manners. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0047] The core of the present invention is to provide a lithography correction method. The flow schematic diagram of a specific embodiment is as shown in Figure 2 shown, which is called the first specific embodiment and includes:

[0048] S101: Obtain the instruction to be calibrated.

[0049] The instruction to be calibrated is a lithography instruction that needs to be corrected and includes control instructions for the liquid field. By correcting the parameters in the instruction to be calibrated, the present invention improves the pressure stability and uniformity of the liquid field, thereby improving the lithography and overlay effects.

[0050] S102: Perform experimental lithography on the pressure-sensitive wafer according to the instruction to be calibrated; the surface of the pressure-sensitive wafer includes a pressure sensor array.

[0051] Currently, the integration of sensors in wafers has been achieved. By integrating pressure sensors in the wafer to be lithographed, the present invention realizes turning the wafer surface into an entire pressure-sensing surface. Further, a battery and a wireless communicator are also integrated in the pressure-sensitive wafer to realize the wireless transmission of the following liquid field pressure data, further simplifying the device structure and improving the usability and working stability of the device.

[0052] The experimental lithography in this step is the lithography process corresponding to the instruction to be calibrated that is executed and is the same as the batch lithography without correction.

[0053] S103: Receive the liquid field pressure data from the pressure-sensitive wafer.

[0054] Please refer to Figure 3 , Figure 3 which is the structural schematic diagram of the pressure-sensitive wafer. The direction of the solid arrow in the figure represents the movement path of the liquid field in the experimental lithography, and the pressure sensor unit is represented by 01.

[0055] Of course, the greater the density of the pressure sensor units in the sensor array on the surface of the pressure-sensitive wafer, the higher the pressure accuracy of the obtained liquid field, but the cost and process difficulty are also higher. After a large number of theoretical calculations and actual tests, considering low cost and low production difficulty, the detection range of adjacent pressure sensor units with high detection accuracy is 25 mm to 35 mm, including the end values, such as any one of 25.0 mm, 29.7 mm, or 35.0 mm.

[0056] S104: Correct the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction.

[0057] After obtaining the liquid field pressure data, the parameters in the calibration instruction to be calibrated can be adjusted, and the experimental lithography can be repeatedly performed for verification. Finally, a calibration instruction with good pressure uniformity at each scanning point on the wafer during the lithography process can be obtained. Modifying the parameters of the calibration instruction includes correcting at least one of the liquid field pipeline pressure, liquid field pipeline flow rate, and liquid field movement speed. Of course, other parameters can also be adjusted according to the actual situation to finally obtain a calibration instruction with better pressure uniformity during the lithography process.

[0058] Further, after receiving the liquid field pressure data from the pressure-sensitive wafer, it further includes:

[0059] Determining the immersion head correction parameters according to the liquid field pressure data.

[0060] If the pressure of the liquid field is uneven, in addition to the lithography parameters, the topography of the immersion head itself may also be inappropriate, resulting in uneven pressure distribution in the liquid field. Therefore, if the lithography pressure parameters show a certain azimuth trend in the pressure distribution at each scanning point, the immersion head can be modified and replaced to further improve the pressure uniformity of the liquid field during the lithography process and enhance the lithography effect.

[0061] The lithography correction method provided by the present invention includes obtaining a calibration instruction to be calibrated; performing experimental lithography on a pressure-sensitive wafer according to the calibration instruction to be calibrated, where the surface of the pressure-sensitive wafer includes a pressure sensor array; receiving liquid field pressure data from the pressure-sensitive wafer; and correcting the calibration instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction. The present invention realizes the full-process monitoring of the liquid field pressure during the execution of the calibration instruction to be calibrated through a pressure-sensitive wafer with a pressure sensor array on its surface. The pressure distribution at each scanning point is included in the feedback liquid field pressure data, providing a direct basis for correcting the subsequent calibration instruction to be calibrated, improving the pressure uniformity at each scanning point, and reducing the disturbing force caused by uneven liquid field pressure, greatly improving the correction efficiency during the R & D process and reducing the R & D cost.

[0062] On the basis of the specific implementation manner 1, the correction method of the calibration instruction to be calibrated is further limited to obtain the specific implementation manner 2, and the corresponding process schematic diagram is as Figure 4 shown, including:

[0063] S201: Obtain a calibration instruction to be calibrated.

[0064] S202: Perform experimental lithography on a pressure-sensitive wafer according to the calibration instruction to be calibrated, where the surface of the pressure-sensitive wafer includes a pressure sensor array.

[0065] S203: Receive liquid field pressure data from the pressure-sensitive wafer.

[0066] S204: Correcting the scanning speed corresponding to each scanning point in the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction.

[0067] The difference between this specific implementation and the above specific implementation is that, in this specific implementation, the correction parameters of the instruction to be corrected are limited, and the remaining steps are the same as those in the above specific implementation, which will not be elaborated here.

[0068] This preferred embodiment starts with the speed aspect and improves the pressure uniformity of the liquid field. The scanning speed is crucial to the pressure uniformity of the liquid field. Although fast scanning can improve production efficiency, it will cause turbulence in the liquid flow in the liquid field, and then cause uneven pressure distribution in the liquid field, affecting the micro-imaging effect. Therefore, through appropriate scanning speed correction, the pressure uniformity of the liquid field in the micro-imaging process can be greatly improved. In addition, the scanning speed is relatively independent of other parameters in the micro-imaging process. Adjusting the scanning speed alone will not affect other parameters. There is no need to consider the linkage changes of other parameters after changing the scanning speed. The operability is strong and the process is simple and convenient.

[0069] Furthermore, the scanning speed corresponding to each scanning point in the instruction to be corrected is corrected according to the liquid field pressure data to obtain the correction instruction, which includes:

[0070] A1: According to the liquid field pressure data, when the pressure uniformity of each scanning point reaches a preset existence threshold, the scanning speed of the scanning point is determined as the limit scanning speed.

[0071] The limit scanning speed in this step can be obtained through a large number of experimental lithography measurements at different scanning speeds, or based on limited experimental lithography, the linear relationship coefficient between the pressure uniformity and the scanning speed at each scanning point on the pressure-sensitive wafer can be obtained, and then the limit scanning speed corresponding to the threshold value can be inferred.

[0072] A2: Replace the scanning speed corresponding to each scanning point in the instruction to be calibrated with the corresponding limit scanning speed to obtain a calibration instruction.

[0073] In this preferred embodiment, a specific method for correcting the scanning speed is provided. That is, since the faster the scanning speed, the worse the pressure uniformity of the liquid field, and the slower the scanning speed, the lower the production efficiency, therefore, this preferred embodiment presets the lowest bottom line of acceptable pressure uniformity, that is, the existence threshold, thereby achieving a balance between the pressure uniformity and production efficiency.

[0074] Furthermore, after receiving the liquid field pressure data, the method further includes:

[0075] B1: Divide the scanning points in the to-be-calibrated instruction into multiple speed regions according to the liquid field pressure data.

[0076] In this step, the points with approximate pressure values are divided into the same speed region, and the scanning points within the same speed region can be uniformly processed subsequently.

[0077] Specifically, the method for delimiting the speed regions in this step includes:

[0078] Divide the scanning points in the to-be-calibrated instruction into multiple speed regions according to the liquid field pressure data; wherein, the difference between the maximum pressure value and the minimum pressure value of the scanning points in a single speed region does not exceed a preset classification threshold.

[0079] In this preferred embodiment, the speed region is determined by the difference between the maximum and minimum pressures. The method is simple and the calculation amount is low. Of course, other algorithms can also be used.

[0080] Correspondingly, after the scanning speed of each scanning point is used as the limit scanning speed when the pressure uniformity of each scanning point reaches a preset existence threshold according to the liquid field pressure data, it further includes:

[0081] B2: Determine the representative scanning speed corresponding to each speed region according to the limit scanning speed of the scanning points in each speed region.

[0082] This step specifically includes:

[0083] Calculate the average value of the limit scanning speeds of all the scanning points in each speed region as the representative scanning speed corresponding to each speed region.

[0084] Taking the average value of the limit scanning speeds of each scanning point as the representative scanning speed of the speed region can greatly reduce the calculation amount on the premise of ensuring both production efficiency and high pressure uniformity. Of course, other methods can also be used to obtain the representative scanning speed, such as taking the median value of the limit scanning speeds within the speed region, etc., which can be selected according to actual needs and is not limited in this invention.

[0085] Correspondingly, the step of obtaining the calibration instruction by replacing the scanning speed corresponding to each scanning point in the to-be-calibrated instruction with the corresponding limit scanning speed includes:

[0086] B3: Replace the scanning speed corresponding to the scanning points in each speed region in the to-be-calibrated instruction with the corresponding representative scanning speed to obtain the calibration instruction.

[0087] In this preferred embodiment, the scanning points on the wafer surface are divided into multiple speed regions, and the scanning points within the same speed region all adopt a unified scanning speed, reducing the instruction data volume, simplifying the control complexity of the lithography process, and improving the production efficiency.

[0088] Next, the lithography correction device provided by the embodiments of the present invention will be introduced. The lithography correction device described below can be correspondingly referred to the lithography correction method described above.

[0089] Figure 5 It is a block diagram of the lithography correction device provided by the embodiments of the present invention. Refer to Figure 5 The lithography correction device may include:

[0090] An acquisition module 100, configured to acquire an instruction to be calibrated;

[0091] An experiment module 200, configured to perform experimental lithography on a piezoresistive wafer according to the instruction to be calibrated; the surface of the piezoresistive wafer includes a pressure sensor array;

[0092] A receiving module 300, configured to receive liquid field pressure data from the piezoresistive wafer;

[0093] A correction module 400, configured to correct the instruction to be calibrated according to the liquid field pressure data to obtain a calibrated instruction.

[0094] As a specific implementation manner, the correction module 400 includes:

[0095] A speed correction unit, configured to correct the scanning speed corresponding to each scanning point in the instruction to be calibrated according to the liquid field pressure data to obtain a calibrated instruction.

[0096] As a specific implementation manner, the correction module 400 includes:

[0097] A limit determination unit, configured to determine, according to the liquid field pressure data, the scanning speed of each scanning point when the pressure uniformity of each scanning point reaches a preset existence threshold as the limit scanning speed;

[0098] A limit replacement unit, configured to replace the scanning speed corresponding to each scanning point in the instruction to be calibrated with the corresponding limit scanning speed to obtain a calibrated instruction.

[0099] As a specific implementation manner, the receiving module 300 further includes:

[0100] A region unit, configured to divide the scanning points in the instruction to be calibrated into multiple speed regions according to the liquid field pressure data;

[0101] Correspondingly, the correction module 400 further includes:

[0102] A representative determination unit, configured to determine a representative scanning speed corresponding to each of the speed regions according to the limit scanning speeds of the scanning points in each of the speed regions.

[0103] Correspondingly, the correction module 400 includes:

[0104] A representative replacement unit, configured to replace the scanning speed corresponding to the scanning point of each speed region in the to-be-calibrated instruction with the corresponding representative scanning speed to obtain a calibrated instruction.

[0105] As a specific implementation manner, the receiving module 300 includes:

[0106] A difference threshold unit, configured to divide the scanning points in the to-be-calibrated instruction into multiple speed regions according to the liquid field pressure data; wherein, the difference between the maximum pressure and the minimum pressure of the scanning points in a single speed region does not exceed a preset classification threshold.

[0107] As a specific implementation manner, the correction module 400 includes:

[0108] An averaging unit, configured to calculate an average value of the limit scanning speeds of all the scanning points in each of the speed regions as the representative scanning speed corresponding to each of the speed regions.

[0109] As a specific implementation manner, the receiving module 300 further includes:

[0110] An immersion head unit, configured to determine an immersion head correction parameter according to the liquid field pressure data.

[0111] The lithography correction device provided by the present invention includes an acquisition module 100, configured to acquire a to-be-calibrated instruction; an experiment module 200, configured to perform experimental lithography on a pressure-sensitive wafer according to the to-be-calibrated instruction; the surface of the pressure-sensitive wafer includes a pressure sensor array; a receiving module 300, configured to receive liquid field pressure data from the pressure-sensitive wafer; and a correction module 400, configured to correct the to-be-calibrated instruction according to the liquid field pressure data to obtain a calibrated instruction. The present invention realizes the full-process monitoring of the liquid field pressure during the execution of the to-be-calibrated instruction through a pressure-sensitive wafer with a pressure sensor array on its surface. The pressure distribution of each scanning point is included in the feedback liquid field pressure data, providing a direct correction basis for subsequent correction of the to-be-calibrated instruction, improving the pressure uniformity of each scanning point, and reducing the disturbing force caused by uneven liquid field pressure, greatly improving the correction efficiency in the R & D process and reducing the R & D cost.

[0112] The lithography correction device of this embodiment is used to implement the aforementioned lithography correction method. Therefore, the specific implementation manners in the lithography correction device can be seen in the embodiment part of the lithography correction method in the foregoing text. For example, the acquisition module 100, the experiment module 200, the reception module 300, and the correction module 400 are respectively used to implement steps S101, S102, S103, and S104 in the above lithography correction method. Therefore, the specific implementation manners can refer to the descriptions of the corresponding various part embodiments and will not be elaborated herein.

[0113] The present invention also provides a lithography correction device, including:

[0114] A memory for storing a computer program;

[0115] A processor for implementing the steps of any one of the above-mentioned lithography correction methods when executing the computer program. The lithography correction method provided by the present invention includes: obtaining a to-be-calibrated instruction; performing experimental lithography on a pressure-sensitive wafer according to the to-be-calibrated instruction; the surface of the pressure-sensitive wafer includes a pressure sensor array; receiving liquid field pressure data from the pressure-sensitive wafer; and correcting the to-be-calibrated instruction according to the liquid field pressure data to obtain a calibration instruction. The present invention realizes the full-process monitoring of the liquid field pressure during the execution of the to-be-calibrated instruction through a pressure-sensitive wafer with a pressure sensor array arranged on its surface. The pressure distribution of each scanning point is included in the feedback liquid field pressure data, providing a direct correction basis for the subsequent correction of the to-be-calibrated instruction and improving the pressure uniformity of each scanning point, greatly improving the correction efficiency and reducing the correction cost.

[0116] The present invention also provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of any one of the above-mentioned lithography correction methods are implemented. The lithography correction method provided by the present invention includes: obtaining a to-be-calibrated instruction; performing experimental lithography on a pressure-sensitive wafer according to the to-be-calibrated instruction; the surface of the pressure-sensitive wafer includes a pressure sensor array; receiving liquid field pressure data from the pressure-sensitive wafer; and correcting the to-be-calibrated instruction according to the liquid field pressure data to obtain a calibration instruction.

[0117] The present invention realizes the full-process monitoring of the liquid field pressure during the execution of the to-be-calibrated instruction through a pressure-sensitive wafer with a pressure sensor array arranged on its surface. The pressure distribution of each scanning point is included in the feedback liquid field pressure data, providing a direct correction basis for the subsequent correction of the to-be-calibrated instruction and improving the pressure uniformity of each scanning point, greatly improving the correction efficiency and reducing the correction cost.

[0118] In this specification, the various embodiments are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple. For the relevant parts, reference can be made to the description in the method section.

[0119] It should be noted that in this specification, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements not only includes those elements but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the said element.

[0120] Those skilled in the art can further realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be implemented by electronic hardware, computer software, or a combination of the two. To clearly illustrate the interchangeability of hardware and software, the components and steps of each example have been generally described according to their functions in the above description. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Skilled professionals can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present invention.

[0121] The steps of the methods or algorithms described in combination with the embodiments disclosed herein can be directly implemented by hardware, software modules executed by a processor, or a combination of the two. The software modules can be placed in a random access memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium well-known in the technical field.

[0122] The above has introduced in detail the lithography correction method, device, equipment and medium provided by the present invention. Specific examples are used in this article to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A lithography correction method, characterized in that, comprising: obtaining an instruction to be calibrated; performing experimental lithography on a piezoresistive wafer according to the instruction to be calibrated; the surface of the piezoresistive wafer includes a pressure sensor array; receiving liquid field pressure data from the piezoresistive wafer; correcting the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction.

2. The lithography correction method according to claim 1, characterized in that, the correcting the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction includes: correcting the scanning speed corresponding to each scanning point in the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction.

3. The lithography correction method according to claim 2, characterized in that, the correcting the scanning speed corresponding to each scanning point in the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction includes: determining, according to the liquid field pressure data, the scanning speed of the scanning point when the pressure uniformity of each scanning point reaches a preset existence threshold as the limit scanning speed; replacing the scanning speed corresponding to each scanning point in the instruction to be calibrated with the corresponding limit scanning speed to obtain a calibration instruction.

4. The lithography correction method according to claim 3, characterized in that, after receiving the liquid field pressure data, further comprising: dividing the scanning points in the instruction to be calibrated into multiple speed regions according to the liquid field pressure data; correspondingly, after determining, according to the liquid field pressure data, the scanning speed of the scanning point when the pressure uniformity of each scanning point reaches a preset existence threshold as the limit scanning speed, further comprising: determining a representative scanning speed corresponding to each speed region according to the limit scanning speeds of the scanning points in each speed region; correspondingly, the replacing the scanning speed corresponding to each scanning point in the instruction to be calibrated with the corresponding limit scanning speed to obtain a calibration instruction includes: replacing the scanning speed corresponding to the scanning points in each speed region of the instruction to be calibrated with the corresponding representative scanning speed to obtain a calibration instruction.

5. The lithography correction method according to claim 4, characterized in that, the dividing the scanning points in the instruction to be calibrated into multiple speed regions according to the liquid field pressure data includes: dividing the scanning points in the instruction to be calibrated into multiple speed regions according to the liquid field pressure data; wherein, the difference between the maximum pressure and the minimum pressure of the scanning points in a single speed region does not exceed a preset classification threshold.

6. The lithography correction method according to claim 4, characterized in that, the determining a representative scanning speed corresponding to each speed region according to the limit scanning speeds of the scanning points in each speed region includes: calculating the average value of the limit scanning speeds of all the scanning points in each speed region as the representative scanning speed corresponding to each speed region.

7. The lithography correction method according to claim 1, characterized in that, after receiving the liquid field pressure data from the piezoresistive wafer, further comprising: determining an immersion head correction parameter according to the liquid field pressure data.

8. A lithography correction device, characterized in that, it includes: an acquisition module for acquiring an instruction to be calibrated; an experiment module for performing experimental lithography on a piezoresistive wafer according to the instruction to be calibrated; the surface of the piezoresistive wafer includes a pressure sensor array; a receiving module for receiving liquid field pressure data from the piezoresistive wafer; a correction module for correcting the instruction to be calibrated according to the liquid field pressure data to obtain a calibration instruction.

9. A lithography correction equipment, characterized in that, it includes: a memory for storing a computer program; a processor for implementing the steps of the lithography correction method according to any one of claims 1 to 6 when executing the computer program.

10. A computer-readable storage medium, characterized in that, a computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, the steps of the lithography correction method according to any one of claims 1 to 6 are implemented.

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