Ceramic heater and temperature regulation and control method and preparation method thereof

Abstract

The invention provides a ceramic heater and a temperature regulation and control method and a preparation method thereof, and the ceramic heater employs a multi-heating-zone parallel type heating electrode structure, and the back side of a main heating electrode layer is additionally provided with an adjusting heating electrode layer. The resistance values of the heating electrodes are controlled through the parallel compensation synergistic effect of the heating electrodes and the adjusting electrodes, so that the resistance values of the heating electrodes corresponding to all areas of the whole heating surface are uniform and consistent, and the purpose of uniform heating amount is achieved. Starting from the preparation end of the ceramic heater, uniform temperature control can be achieved in the production and processing stage of the ceramic heater, additional electronic elements such as a coupling switch and a controller do not need to be arranged at the terminal, special system integration and power supply control are not needed, and the ceramic heater can be directly put into use after temperature regulation and control; and other operations such as debugging are not needed subsequently, so that the method is a process technology which is effective, good in technical reliability and easy for engineering application.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor manufacturing, and particularly relates to a ceramic heater, a temperature control method thereof, and a preparation method thereof. Background Art

[0002] In the field of semiconductor processing technology, ceramic heaters, such as electrostatic chucks, ceramic heating plates, etc., are commonly used auxiliary devices. As a loading device that uses electrostatic attraction to hold silicon wafers or liquid crystal substrates, electrostatic chucks have been widely used in various processes such as semiconductor manufacturing and liquid crystal manufacturing. In process manufacturing such as etching, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), and ion implantation, the temperature of the semiconductor wafer as the substrate to be processed is one of the important factors affecting semiconductor characteristics (for example, increasing the patterning accuracy of the wafer, improving process efficiency, etc.). Therefore, in semiconductor manufacturing processes, it is required to precisely control the temperature of the semiconductor wafer, and the temperature uniformity on the surface of the electrostatic chuck directly determines the performance of the semiconductor device to be processed.

[0003] However, in the prior art of electrostatic chuck manufacturing, due to manufacturing precision and limitations in preparation technology or manufacturing methods during the manufacturing process, the heating temperature uniformity is often unsatisfactory. This is because the heating electrodes built into the ceramic disk are usually formed by printing metal pastes such as tungsten and molybdenum and then sintering at high temperature. In this case, the thickness of the heating electrode film obtained by printing is about 10 μm, and due to printing precision, the thickness of the heating electrode usually ranges from 8 μm to 15 μm. When the heating electrode pattern with such variations is energized and heated, since the heat generation amount is a proportional function of the resistance value (heat generation amount per unit time (Q) = resistance × current 2 ), the heat distribution of the heating electrode is very uneven. At the same time, since the resistance of metal electrode materials such as tungsten and molybdenum has a positive temperature dependence, the resistance in the large-resistance region will further increase as the heat increases, resulting in an increasing temperature difference caused by the initial uneven electrode film thickness. In addition, with the development of semiconductor process technology, the size of the substrate to be processed is getting larger, and electrostatic chucks are usually required to have multiple temperature treatment areas that can be independently regulated. However, in the prior art, the area of the independently controllable heating region is too large, and even a small local temperature non-uniformity in a small area will cause multiple temperature abnormal regions on the heating surface, making it difficult to ensure the temperature treatment effect on the heating surface. Especially for large-size 12-inch ceramic electrostatic chucks, due to the large heating area, it is more difficult to ensure the planar temperature control. Therefore, in addition to the need for uniform heat generation within the electrostatic chuck surface, there is also a need for an ability to actively adjust the local temperature non-uniformity within the electrostatic chuck surface in order to flexibly control the local temperature non-uniformity of the manufactured electrostatic chuck.

[0004] In recent years, in order to precisely control the temperature, electrostatic chucks / ceramic heating plates with different regulation principles have been developed. Chinese Invention Patent (CN114496889A) discloses an electrostatic chuck embedded with a compensation heater. The compensation heater is electrically connected to the controller of the electrostatic chuck. The controller is used to control the turning on or off of each compensation heater and the power of each compensation heater. When the temperature in the detection area is abnormal, it can control the corresponding compensation heater to turn on and adjust the power for compensation heating. Japanese Patent (JP7444842B2) provides a pixelated substrate support assembly that allows lateral and azimuthal adjustment of the heat transfer between the electrostatic chuck and the heating electrode. By arranging a plurality of auxiliary heaters in the dielectric above or below the main resistance heater, each auxiliary heater is respectively coupled to each power controller switch, and the switch provides individual control for each auxiliary heater, enabling independent control between the on state and the off state of the auxiliary heater, so as to achieve the purpose of compensating and adjusting local temperature hot spots or cold spots of the electrostatic chuck. However, these compensation heaters and auxiliary heaters require additional electronic components such as coupling switches and controllers at the terminal, and special system integration and power control are needed, resulting in a complex device structure and increasing the device cost and labor cost. Summary of the Invention

[0005] In view of this, the present application provides a ceramic heater, its temperature regulation method and preparation method, which can effectively improve the problem of uneven heat generation distribution on the heating surface of the existing electrostatic chuck.

[0006] The present application provides a ceramic heater, including a ceramic disk and a main heating electrode layer and an adjustment heating electrode layer buried in the ceramic disk and arranged at intervals along the axial direction. The ceramic disk has a heating surface. The adjustment heating electrode layer is located on the side of the main heating electrode layer away from the heating surface. The main heating electrode layer includes a plurality of heating electrodes, and the plurality of heating electrodes respectively correspond to different regions of the heating surface. The adjustment heating electrode layer includes at least one adjustment electrode, and the adjustment electrode can be selectively connected in parallel with the corresponding heating electrode.

[0007] In one embodiment, one adjustment electrode is provided, and the adjustment electrode corresponds to the heating electrode in the axial direction of the ceramic disk; or, a plurality of adjustment electrodes are provided, and each adjustment electrode corresponds to a heating electrode in the axial direction of the ceramic disk; or, a plurality of adjustment electrodes are provided and the number is the same as the number of heating electrodes, and the plurality of adjustment electrodes correspond to the plurality of heating electrodes in a one-to-one correspondence in the axial direction of the ceramic disk.

[0008] In one embodiment, the ceramic heater includes a conducting member, and the adjusting electrode is conductively connected in parallel with the heating electrode through the conducting member, and the conducting member penetrates through an insulating layer between the adjusting electrode and the heating electrode.

[0009] In some embodiments, two heating electrodes are provided; one of the heating electrodes is disposed at the central portion of the ceramic disc, and the other heating electrode surrounds the heating electrode at the central portion, or, the two heating electrodes are disposed opposite to each other; correspondingly, one adjusting electrode is provided and is axially correspondingly disposed with any one of the heating electrodes, or two adjusting electrodes are provided and are respectively axially correspondingly disposed with the two heating electrodes;

[0010] Or, more than two heating electrodes are provided, one of the heating electrodes is disposed at the central portion of the ceramic disc, and some of the other heating electrodes are arranged in a circumferential direction around the heating electrode at the central portion and are connected in parallel between the plurality of heating electrodes at the periphery; correspondingly, one adjusting electrode is provided and is axially correspondingly disposed with any one of the heating electrodes, or a plurality of adjusting electrodes are provided, and each adjusting electrode is axially correspondingly disposed with one heating electrode;

[0011] Or, more than two heating electrodes are provided, some of the heating electrodes are disposed at the central portion of the ceramic disc and are arranged in a circumferential direction, and the other heating electrode surrounds the plurality of heating electrodes at the central portion and is connected in parallel between the plurality of heating electrodes at the central portion; correspondingly, one adjusting electrode is provided and is axially correspondingly disposed with any one of the heating electrodes, or a plurality of adjusting electrodes are provided, and each adjusting electrode is axially correspondingly disposed with one heating electrode. In one embodiment, a plurality of heating electrodes are provided, some of the heating electrodes are disposed at the central portion of the ceramic disc and are arranged in a circumferential direction, and some of the other heating electrodes are arranged in a circumferential direction around the plurality of heating electrodes at the central portion; correspondingly, one adjusting electrode is provided and is axially correspondingly disposed with any one of the heating electrodes, or a plurality of adjusting electrodes are provided, and each adjusting electrode is axially correspondingly disposed with one heating electrode.

[0012] In one embodiment, the number of the heating electrodes at the periphery is the same as the number of the heating electrodes at the central portion, and the plurality of heating electrodes at the periphery and the plurality of heating electrodes at the central portion are radially corresponding to each other on the ceramic disc.

[0013] In one embodiment, the plurality of heating electrodes at the periphery are connected in parallel; and / or, the plurality of heating electrodes at the central portion are connected in parallel.

[0014] In one embodiment, a plurality of the heating electrodes located at the periphery form a plurality of circles, and the plurality of circles are arranged in sequence and outward along the radial direction of the ceramic disc.

[0015] In one embodiment, the heating electrode is a continuously distributed electrode strip; the adjusting electrode is a continuously distributed electrode strip or a plurality of intermittently distributed electrode short strips.

[0016] In one embodiment, the ceramic disc includes a first insulating layer, a second insulating layer, and a first substrate layer connected in sequence. The main heating electrode layer is encapsulated between the first insulating layer and the second insulating layer, and the adjusting heating electrode layer is encapsulated between the second insulating layer and the first substrate layer.

[0017] In one embodiment, the ceramic disc includes a third insulating layer, a second substrate layer, a fourth insulating layer, and a third substrate layer connected in sequence. An adsorption electrode layer is encapsulated between the third insulating layer and the second substrate layer. The main heating electrode layer is encapsulated between the second substrate layer and the fourth insulating layer, and the adjusting heating electrode layer is encapsulated between the fourth insulating layer and the third substrate layer.

[0018] This application further provides a temperature control method for a ceramic heater, where the ceramic heater is the ceramic heater as described above; the temperature control method includes the following steps:

[0019] S1: Connect the main heating electrode layer to a power source, and use a temperature measuring device to detect the temperature distribution of the heating surface;

[0020] S2: Adjust the output power of the power source so that the heating surface only includes a normal area with normal temperature and an abnormal area with high temperature, and record the abnormal area with high temperature on the heating surface;

[0021] S3: Calculate the resistance value of the adjusting electrode that needs to be connected in parallel with the heating electrode corresponding to the abnormal area; and

[0022] S4: Connect the heating electrode corresponding to the abnormal area in parallel with the adjusting electrode with an adapted resistance value.

[0023] In one embodiment, a plurality of the heating electrodes and a plurality of the adjusting electrodes are respectively provided, and the plurality of adjusting electrodes and the plurality of heating electrodes correspond to each other one by one in the axial direction of the ceramic disc; the step S2 further includes:

[0024] S2.1: Project the abnormal area along the axial direction of the ceramic disc onto the back surface opposite to the heating surface and make a mark;

[0025] S2.2: Record the two side boundaries of the marked area along the circumferential direction of the ceramic disc and label them as the first isoelectric point and the second isoelectric point respectively until all marked areas are labeled;

[0026] The step S3 further includes:

[0027] S3.1: Calculate the length of the regulating electrode that needs to be connected in parallel according to the resistance value of the regulating electrode;

[0028] S3.2: Adjust the relative distance between the first isoelectric point and the second isoelectric point according to the length of the regulating electrode;

[0029] The step S4 further includes:

[0030] S4.1: Process counterbores along the axial direction of the ceramic disc at the positions of the first isoelectric point and the second isoelectric point until the main heating electrode layer, and fill conductive filler in the counterbores to electrically connect the regulating electrode with the corresponding heating electrode;

[0031] S4.2: Continue to fill insulating and sealing filler in the counterbores to seal the conductive filler.

[0032] This application also provides a preparation method of a ceramic heater, and the preparation method includes the following steps:

[0033] K1: Prepare precursor layers of the first insulating layer, the main heating electrode layer, the second insulating layer, the regulating heating electrode layer and the first substrate layer respectively;

[0034] K2: Stack the precursor layer of the first insulating layer, the precursor layer of the main heating electrode layer, the precursor layer of the second insulating layer, the precursor layer of the regulating heating electrode layer and the precursor layer of the first substrate layer in sequence, and co-fire them integrally in a sintering device to obtain the ceramic heater in which the first insulating layer, the main heating electrode layer, the second insulating layer, the regulating heating electrode layer and the first substrate layer are connected in sequence; and

[0035] K3: Perform temperature regulation on the ceramic heater according to the temperature regulation method as described above, so that the heating electrode corresponding to the abnormal area is electrically connected in parallel with the regulating electrode with an adapted resistance value.

[0036] This application also provides a preparation method of a ceramic heater, and the preparation method includes the following steps:

[0037] L1: Prepare precursor layers of the first insulating layer, the main heating electrode layer and the second insulating layer respectively;

[0038] L2: Stack the precursor layer of the first insulating layer, the precursor layer of the main heating electrode layer, and the precursor layer of the second insulating layer in sequence, and co-fire them integrally in a sintering device to obtain a first prefabricated structure in which the first insulating layer, the main heating electrode layer, and the second insulating layer are connected in sequence;

[0039] L3: Provide a conductive coil and fabricate the conductive coil into a predetermined shape;

[0040] L4: Prepare the precursor layer of the first substrate layer and sinter it into the first substrate layer with a groove on the surface adapted to the shape of the conductive coil in a sintering device, embed the conductive coil in the groove to form an adjustable heating electrode layer, and obtain a second prefabricated structure in which the adjustable heating electrode layer and the first substrate layer are connected in sequence;

[0041] L5: Connect the first prefabricated structure and the second prefabricated structure into one body to obtain the ceramic heater in which the first insulating layer, the main heating electrode layer, the second insulating layer, the adjustable heating electrode layer, and the first substrate layer are connected in sequence; and

[0042] L6: Perform temperature control on the ceramic heater according to the temperature control method described above, so that the heating electrode corresponding to the abnormal area is connected in parallel with the adjustable electrode with an adapted resistance value.

[0043] The present application also provides a preparation method of a ceramic heater, and the preparation method includes the following steps:

[0044] M1: Prepare the precursor layers of the third insulating layer, the adsorption electrode layer, the second substrate layer, the main heating electrode layer, the fourth insulating layer, the adjustable heating electrode layer, and the third substrate layer respectively;

[0045] M2: Stack the precursor layer of the third insulating layer, the precursor layer of the adsorption electrode layer, the precursor layer of the second substrate layer, the precursor layer of the main heating electrode layer, the precursor layer of the fourth insulating layer, the precursor layer of the adjustable heating electrode layer, and the precursor layer of the third substrate layer in sequence, and co-fire them integrally in a sintering device to obtain the ceramic heater in which the third insulating layer, the adsorption electrode layer, the second substrate layer, the main heating electrode layer, the fourth insulating layer, the adjustable heating electrode layer, and the third substrate layer are connected in sequence; and

[0046] M3: Perform temperature control on the ceramic heater according to the temperature control method described above, so that the heating electrode corresponding to the abnormal area is connected in parallel with the adjustable electrode with an adapted resistance value.

[0047] The present application also provides a preparation method of a ceramic heater, and the preparation method includes the following steps:

[0048] N1: Prepare the precursor layers of the third insulating layer, the adsorption electrode layer, the second substrate layer, the main heating electrode layer, and the fourth insulating layer respectively;

[0049] N2: Stack the precursor layer of the third insulating layer, the precursor layer of the adsorption electrode layer, the precursor layer of the second substrate layer, the precursor layer of the main heating electrode layer, and the precursor layer of the fourth insulating layer in sequence, and co-fire them integrally in a sintering device to obtain a first precursor structure in which the third insulating layer, the adsorption electrode layer, the second substrate layer, the main heating electrode layer, and the fourth insulating layer are connected in sequence;

[0050] N3: Provide a conductive coil and fabricate the conductive coil into a predetermined shape;

[0051] N4: Prepare the precursor layer of the third substrate layer and sinter it into the third substrate layer with a groove on the surface adapted to the shape of the conductive coil in a sintering device, and fit the conductive coil into the groove to form an adjustable heating electrode layer, thus obtaining a second precursor structure in which the adjustable heating electrode layer and the third substrate layer are connected in sequence;

[0052] N5: Connect the first precursor structure and the second precursor structure into one body to obtain the ceramic heater in which the third insulating layer, the adsorption electrode layer, the second substrate layer, the main heating electrode layer, the fourth insulating layer, the adjustable heating electrode layer, and the third substrate layer are connected in sequence; and

[0053] N6: Perform temperature control on the ceramic heater according to the temperature control method described above, so that the heating electrode corresponding to the abnormal area is connected in parallel with the adjustable electrode with an adapted resistance value.

[0054] In summary, the present application provides a ceramic heater, its temperature control method, and its manufacturing method. A multi-heating-zone parallel-connected heating electrode structure is adopted, and an additional adjustable heating electrode layer is provided on the back side of the main heating electrode layer. By the parallel compensation and synergistic effect of the heating electrode and the adjustable electrode, the resistance value of the heating electrode is controlled, so that the resistance values of the heating electrodes corresponding to each area of the entire heating surface are uniform, thereby achieving the purpose of uniform heat generation. Starting from the manufacturing end of the ceramic heater, uniform temperature control can be achieved during the production and processing stage of the ceramic heater, without the need to be equipped with additional electronic components such as coupling switches and controllers at the terminal, nor special system integration and power control. After temperature control, the ceramic heater can be directly put into use, and no further debugging or other operations are required later. It is a process technology that is effective, has good technical reliability, and is easy to be applied in engineering. Description of the Drawings

[0055] Figure 1 It is a schematic structural diagram of the ceramic heater in an embodiment of the present application.

[0056] Figure 2 It is a schematic structural diagram of the ceramic heater in another embodiment of the present application.

[0057] Figure 3-1Schematic diagram of a structure of a heating electrode and an adjusting electrode in the present application.

[0058] Figure 4-1 Schematic diagram of a structure of an adjusting electrode in the present application.

[0059] Figure 3-2 Schematic diagram of a structure of a heating electrode and an adjusting electrode in another embodiment of the present application.

[0060] Figure 4-2 Schematic diagram of a structure of another embodiment of the adjusting electrode in the present application.

[0061] Figure 5 Schematic diagram of a structure of a first embodiment of a main heating electrode layer in the present application.

[0062] Figure 6 Schematic diagram of a structure of a second embodiment of a main heating electrode layer in the present application.

[0063] Figure 7 Schematic diagram of a structure of a third embodiment of a main heating electrode layer in the present application.

[0064] Figure 8 Schematic diagram of a structure of a fourth embodiment of a main heating electrode layer in the present application.

[0065] Figure 9 Schematic diagram of a structure of a fifth embodiment of a main heating electrode layer in the present application.

[0066] Figure 10 Schematic flowchart of a temperature control method for a ceramic heater in the present application.

[0067] Figure 11 For Figure 10 Further flowchart of step S2 in

[0068] Figure 12 For Figure 10 Further flowchart of step S3 in

[0069] Figure 13 For Figure 10 Further flowchart of step S4 in

[0070] Figure 14 Test comparison chart of temperature distribution on the heating surface during the debugging of the power supply power in the present application.

[0071] Figure 15 First flowchart of a preparation method for a ceramic heater in the present application.

[0072] Figure 16 Second flowchart of a preparation method for a ceramic heater in the present application.

[0073] Figure 17 This is the third process schematic diagram of the preparation method of the ceramic heater in the present application.

[0074] Figure 18 This is the fourth process schematic diagram of the preparation method of the ceramic heater in the present application.

[0075] Reference numerals: 10 - ceramic heater; 12 - ceramic disk; 14 - main heating electrode layer; 16 - regulating heating electrode layer; 18 - heating surface; 20 - heating electrode; 22 - regulating electrode; 24 - first insulating layer; 26 - second insulating layer; 28 - first substrate layer; 30 - third insulating layer; 32 - second substrate layer; 34 - fourth insulating layer; 36 - third substrate layer; 38 - adsorption electrode layer. Detailed implementation manners

[0076] Before describing the embodiments in detail, it should be understood that the present application is not limited to the detailed structures or element arrangements described hereinafter in the present application or in the drawings. The present application can be implemented in other ways. Moreover, it should be understood that the terms and phrases used herein are only for descriptive purposes and should not be construed restrictively. The terms "including", "comprising", "having" and the like used herein are intended to include the matters listed hereinafter, their equivalents and other additional matters. In particular, when describing "a certain element", the present application does not limit the number of such elements to one, and multiple elements can also be included.

[0077] In the processing of semiconductor devices such as wafers, in order to improve the process efficiency and / or process effect, it is usually required that a ceramic heater, such as an electrostatic chuck, uniformly heats the substrate material. The temperature uniformity on the surface of the ceramic heater directly affects the performance of the semiconductor device to be processed. However, limited by the current manufacturing accuracy of the ceramic heater, there are thickness non-uniformities in the heating electrode thin film embedded inside the insulating layer of the ceramic heater, resulting in different resistances at different positions of the heating electrode strip, thus causing deviations in the heat generation amount, and therefore the temperature uniformity in the plane of the ceramic heater is often poor. To solve this problem, the present application provides a ceramic heater capable of locally adjusting the temperature in the plane direction, which can actively adjust the local temperature abnormal area in the plane of the ceramic heater; at the same time, the present application provides a temperature control method for a ceramic heater capable of actively regulating the temperature difference, as well as a preparation method of the ceramic heater.

[0078] Please refer to Figure 1 and Figure 2As shown in the figure, the present application provides a ceramic heater 10, which includes a ceramic disk 12 and a main heating electrode layer 14 and an adjusting heating electrode layer 16 that are buried in the ceramic disk 12 and arranged at intervals along the axial direction. The ceramic disk 12 has a heating surface 18, and the heating surface 18 is, for example, the upper surface of the ceramic disk 12 in the illustrated direction. The adjusting heating electrode layer 16 is located on the side of the main heating electrode layer 14 away from the heating surface 18. The main heating electrode layer 14 includes a plurality of heating electrodes 20, and the plurality of heating electrodes 20 respectively correspond to different regions of the heating surface 18. The adjusting heating electrode layer 16 includes at least one adjusting electrode 22, and the adjusting electrode 22 can be selectively connected in parallel with the corresponding heating electrode 20, which can eliminate defects such as different resistance values, different heat generation amounts, and uneven heating caused by the uneven thickness of the heating electrode 20, so that the resistance values of the respective heating electrodes 20 are consistent, the heat generation amounts are consistent, and further the heating surface 18 can be heated evenly. Among them, the plurality of heating electrodes 20 means that the number of heating electrodes 20 is more than 1, and the number of heating electrodes 20 can be two or more than two. The "plurality" in the following text can also have the above explanation.

[0079] The present application adopts a multi-heating-zone parallel heating electrode structure, and an additional adjusting heating electrode layer 16 is provided on the back side of the main heating electrode layer 14. By the parallel compensation and synergy effect of the heating electrode 20 and the adjusting electrode 22, the resistance value of the heating electrode 20 is controlled, so that the resistance values of the heating electrodes 20 corresponding to each region of the entire heating surface 18 are uniform and consistent, thereby achieving the purpose of uniform heat generation. The present application starts from the preparation end of the ceramic heater 10, and uniform temperature control can be realized in the production and processing stage of the ceramic heater 10. There is no need to equip additional electronic components such as coupling switches and controllers at the terminal, nor special system integration and power control. After the temperature of the ceramic heater 10 is regulated, it can be directly put into use, and no other operations such as debugging are required later. It is a process technology that is effective, has good technical reliability, and is easy to be applied in engineering.

[0080] Furthermore, both the main heating electrode layer 14 and the adjusting heating electrode layer 16 are conductive metal film layers, with a thickness set to 8 - 15 μm, and the materials are both one of tungsten and molybdenum. They can be formed by printing paste-like metal slurry on the surface of the substrate and sintering under pressure.

[0081] Alternatively, the adjusting heating electrode layer 16 can also be a conductive coil with a predetermined electrode shape. The conductive coil can be embedded in a preset groove on the upper surface of the substrate to form the adjusting heating electrode layer 16. The material of the conductive coil can be one or more of silver, copper, nickel, tungsten, molybdenum, titanium, etc.

[0082] The ceramic heater 10 of the present application can be applied to the field of semiconductor processing technology. For example, it can support and fix a wafer to be processed. The ceramic heater 10 can be an electrostatic chuck, which has the functions of electrostatically adsorbing and heating the wafer at the same time. The ceramic heater 10 can also be a ceramic heating plate, which does not fix the wafer by electrostatic adsorption, but by mechanical fixation, and heats the wafer.

[0083] In the embodiment as Figure 1 shown, the ceramic heater 10 is a ceramic heating plate. The ceramic plate 12 includes a first insulating layer 24, a second insulating layer 26, and a first substrate layer 28 connected in sequence from top to bottom. The main heating electrode layer 14 is encapsulated between the first insulating layer 24 and the second insulating layer 26, and the regulating heating electrode layer 16 is encapsulated between the second insulating layer 26 and the first substrate layer 28. Among them, the first insulating layer 24 is a heat transfer layer for directly contacting, supporting, and fixing the wafer. The upper surface of the first insulating layer 24 is the heating surface 18, and the wafer can be supported and fixed on the heating surface 18 through a mechanical structure. The heat generated by the energization of the main heating electrode layer 14 is transferred to the heating surface 18 to heat the wafer. The second insulating layer 26 is used to electrically insulate and separate the regulating heating electrode layer 16 and the main heating electrode layer 14 to prevent them from being electrically connected and short-circuited. The first substrate layer 28 mainly plays a role of structural support, printed circuit, and processing support when manufacturing the ceramic heater 10. The first substrate layer 28 is located at the bottom and contacts, for example, a desktop or a machine table. The thicknesses of the first insulating layer 24 and the second insulating layer 26 are usually set to be less than 0.5 mm. For example, the thickness of the second insulating layer 26 is set to be 0.1 - 0.4 mm, and the thickness of the first substrate layer 28 is usually set to be greater than 2 mm. The materials of the first insulating layer 24, the second insulating layer 26, and the first substrate layer 28 are all selected from one or several of oxide ceramics or non-oxide ceramics. Among them, the oxide ceramics can be selected from one or two of alumina, zirconia, magnesium aluminate spinel, etc., and the non-oxide ceramics can be selected from one or two of aluminum nitride, silicon nitride, and silicon carbide.

[0084] Preferably, the sizes of the first insulating layer 24, the second insulating layer 26, and the first substrate layer 28 are all larger than the sizes of the regulating heating electrode layer 16 and the main heating electrode layer 14, that is, the circumferential edges of the first insulating layer 24, the second insulating layer 26, and the first substrate layer 28 all protrude beyond the circumferential edges of the regulating heating electrode layer 16 and the main heating electrode layer 14. During processing, the edge portion of the first insulating layer 24 is connected to the edge portion of the second insulating layer 26, for example, integrally sintered, so as to completely encapsulate the main heating electrode layer 14 between the first insulating layer 24 and the second insulating layer 26. For example, the edge portion of the second insulating layer 26 bulges upward and is connected to the edge of the first insulating layer 24; the edge portion of the second insulating layer 26 is connected to the edge portion of the first substrate layer 28, for example, integrally sintered, so as to completely encapsulate the regulating heating electrode layer 16 between the second insulating layer 26 and the first substrate layer 28. For example, the edge portion of the first substrate layer 28 bulges upward and is connected to the edge of the second insulating layer 26.

[0085] Furthermore, on the premise of ensuring the overall structural stability of the ceramic heater 10, the thickness of the second insulating layer 26 should not be too thick and should be as thin as possible. For example, the thickness of the second insulating layer 26 is less than 0.5 mm. Optionally, the thickness of the second insulating layer 26 can be 0.1 mm, 0.2 mm, or 0.3 mm. Since the function of the second insulating layer 26 is only to isolate the main heating electrode layer 14 from the regulating heating electrode layer 16, if the thickness of the second insulating layer 26 is large, the self-resistance of the internal conducting parts will be calculated in the parallel resistance value of the electrodes, affecting the precise control of the overall resistance.

[0086] In such as Figure 2In the illustrated embodiment, the ceramic heater 10 is an electrostatic chuck. The ceramic disc 12 includes a third insulating layer 30, a second substrate layer 32, a fourth insulating layer 34, and a third substrate layer 36 that are connected in sequence from top to bottom. An adsorption electrode layer 38 is encapsulated between the third insulating layer 30 and the second substrate layer 32. The main heating electrode layer 14 is encapsulated between the second substrate layer 32 and the fourth insulating layer 34. The adjustment heating electrode layer 16 is encapsulated between the fourth insulating layer 34 and the third substrate layer 36. Among them, the third insulating layer 30 is a dielectric layer for directly contacting, supporting, and fixing the wafer. The adsorption electrode layer 38 is buried between the third insulating layer 30 and the second substrate layer 32. The upper surface of the third insulating layer 30 is the heating surface 18. After the adsorption electrode layer 38 is energized, an adsorption force is generated to adsorb and fix the wafer on the heating surface 18. The heat generated by the energization of the main heating electrode layer 14 is transferred to the heating surface 18 to heat the wafer. The fourth insulating layer 34 is used to electrically insulate and separate the adjustment heating electrode layer 16 and the main heating electrode layer 14 to prevent them from being electrically connected and short-circuited. The second substrate layer 32 and the third substrate layer 36 mainly play the roles of structural support, printed circuit, and processing support during the manufacture of the ceramic heater 10. The third substrate layer 36 is located at the bottom and is in contact with, for example, a tabletop or a machine platform. The adsorption electrode layer 38 is a conductive metal film layer with a thickness set to 8 - 15 μm, and the material is one of tungsten and molybdenum. It can be formed by printing a paste-like metal slurry on the substrate surface and sintering under pressure. The thicknesses of the third insulating layer 30 and the fourth insulating layer 34 are usually set to be less than 0.5 mm. For example, the thickness of the fourth insulating layer 34 is set to 0.1 - 0.4 mm. The thicknesses of the second substrate layer 32 and the third substrate layer 36 are usually set to be greater than 2 mm. The materials of the third insulating layer 30, the second substrate layer 32, the fourth insulating layer 34, and the third substrate layer 36 are all selected from one or several of oxide ceramics or non-oxide ceramics. Among them, the oxide ceramics can be selected from one or two of alumina, zirconia, magnesium aluminate spinel, etc. The non-oxide ceramics can be selected from one or two of aluminum nitride, silicon nitride, and silicon carbide.

[0087] Preferably, the sizes of the third insulating layer 30, the second substrate layer 32, the fourth insulating layer 34, and the third substrate layer 36 are all larger than those of the regulating heating electrode layer 16 and the main heating electrode layer 14, that is, the circumferential edges of the third insulating layer 30, the second substrate layer 32, the fourth insulating layer 34, and the third substrate layer 36 all protrude beyond the circumferential edges of the regulating heating electrode layer 16 and the main heating electrode layer 14. During processing, the edge portion of the third insulating layer 30 is connected to the edge portion of the second substrate layer 32, for example, integrally sintered, so as to completely encapsulate the adsorption electrode layer 38 between the third insulating layer 30 and the second substrate layer 32. For example, the edge portion of the third insulating layer 30 bulges downward and is connected to the edge of the second substrate layer 32; the edge portion of the second substrate layer 32 is connected to the edge portion of the fourth insulating layer 34, for example, integrally sintered, so as to completely encapsulate the main heating electrode layer 14 between the second substrate layer 32 and the fourth insulating layer 34. For example, the edge portion of the fourth insulating layer 34 bulges upward and is connected to the edge of the second substrate layer 32; the fourth insulating layer 34 is connected to the edge portion of the third substrate layer 36, for example, integrally sintered, so as to completely encapsulate the regulating heating electrode layer 16 between the fourth insulating layer 34 and the third substrate layer 36. For example, the edge portion of the third substrate layer 36 bulges upward and is connected to the edge of the fourth insulating layer 34.

[0088] Furthermore, on the premise of ensuring the overall structural stability of the ceramic heater 10, the thickness of the fourth insulating layer 34 should not be too thick and should be as thin as possible. For example, the thickness of the fourth insulating layer 34 is less than 0.5 mm. Optionally, the thickness of the fourth insulating layer 34 can be 0.1 mm, 0.2 mm, or 0.3 mm. Since the function of the fourth insulating layer 34 is only to isolate the main heating electrode layer 14 from the regulating heating electrode layer 16, if the thickness of the fourth insulating layer 34 is large, the self-resistance of the internal conducting parts will be calculated in the parallel-connected electrode resistance value, affecting the precise control of the overall resistance.

[0089] In this application, by providing the regulating heating electrode layer 16 and using the regulating electrode 22 to compensate for the resistance value of the regulating heating electrode 20, the resistance values of multiple heating electrodes 20 are made consistent, so as to achieve the purpose of uniform heating of the heating surface 18. There can be various design schemes for the specific structures, quantities, and positions of the regulating electrode 22 and the heating electrode 20. The following several examples are listed in this application.

[0090] In some embodiments, one regulating electrode 22 is provided and multiple heating electrodes 20 are provided, for example, two or more are provided. The regulating electrode 22 and one or more heating electrodes 20 are axially corresponding positions on the ceramic disc 12. Multiple heating electrodes 20 can be connected in parallel or are independent of each other without being connected in parallel. Alternatively, multiple regulating electrodes 22 are provided, and each regulating electrode 22 and a heating electrode 20 are axially corresponding positions on the ceramic disc 12. Among them, multiple heating electrodes 20 can be connected in parallel or are independent of each other without being connected in parallel.

[0091] In some other embodiments, the number of the adjusting electrodes 22 is set to be the same as the number of the heating electrodes 20, and the multiple adjusting electrodes 22 and the multiple heating electrodes 20 are in one-to-one axial position correspondence on the ceramic disc 12. Among them, the multiple heating electrodes 20 can be connected in parallel or are independent of each other without being connected in parallel.

[0092] Furthermore, the ceramic heater 10 includes a conducting member (not shown in the figure). The adjusting electrode 22 is conductively connected in parallel with the heating electrode 20 through the conducting member. The conducting member penetrates through the insulating layer between the adjusting electrode 22 and the heating electrode 20, such as Figure 1 the second insulating layer 26 shown, and Figure 2 the fourth insulating layer 34 shown. Among them, the resistivity of the conducting member is set to be less than the resistivity of the adjusting electrode 22, that is, the conducting member should be made of a material with low resistivity to minimize the adverse effect of the self-resistance of the conducting member on the parallel connection of the electrodes and facilitate resistance value regulation; more preferably, the resistivity of the conducting member is negligible relative to the resistivity of the adjusting electrode 22 to which it is connected in parallel, so as to ensure that the self-resistance of the conducting member will not be accumulated on the resistance value of the adjusting electrode 22. Optionally, a counterbore for the conducting member to penetrate is provided between the adjusting electrode 22 and the heating electrode 20. The aperture of the counterbore is set to be less than 1 mm. The aperture of the counterbore is as small as possible, only ensuring that the conducting member can conduct the two electrodes, and the radial dimension of the conducting member is reduced as much as possible, thereby reducing the resistance of the conducting member. Among them, the conducting member can specifically be a conductive filler filled in the counterbore.

[0093] In a preferred implementation manner, the electrode structures of the heating electrode 20 and the adjusting electrode 22 can both be electrode strips in a strip structure. For example, the heating electrode 20 is a continuously distributed electrode strip, and the adjusting electrode 22 is a continuously distributed electrode strip or multiple intermittently distributed electrode short strips. The continuously distributed electrode strip is, for example, bent and coiled, and the intermittently distributed electrode short strips are, for example, arranged in an array. When the adjusting electrode 22 adopts multiple intermittently distributed electrode short strips, the intermittent electrode short strips correspond one by one to the heating electrode strip in the upper layer. There is no series-parallel relationship between the electrode short strips, and they play a role by being connected in parallel with the corresponding heating electrode strip in the upper layer. When a high-temperature point appears on the heating electrode strip, a certain electrode short strip corresponding to it is connected in parallel with the high-temperature area, thereby reducing the resistance and the heat generation. To ensure that the heating electrode 20 and the adjusting electrode 22 can correspond axially, in specific implementation, the electrode structure and the electrode arrangement direction of the adjusting electrode 22 can be kept consistent with the electrode structure and the electrode arrangement direction of the corresponding heating electrode 20 respectively; of course, the electrode structures of the heating electrode 20 and the adjusting electrode 22 can also be different. For example, the heating electrode 20 is a continuously distributed electrode strip, and the adjusting electrode 22 is multiple intermittently distributed electrode short strips, but the electrode strips of the two need to be correspondingly arranged. The following will be described in combination with specific embodiments:

[0094] Figure 3-1 Figure 3-1 shows a continuous distributed strip-shaped electrode strip, which is bent and coiled into a symmetric structure on both sides and has a fan shape as a whole. The electrode strip includes two coiled parts, and the two coiled parts are arranged at intervals and connected into an integral continuous electrode strip structure through the strip at the bottom end; Figure 4-1 Figure 4-1 shows a discontinuous distributed electrode short strip. A plurality of electrode short strips are arranged at intervals to form an array structure, and the whole has a fan shape. Two columns of electrode short strips are arranged on both sides, and the number of the lower electrode short strips is more than that of the upper electrode short strips. Although Figure 3-1 and Figure 4-1 the electrode structures shown are not exactly the same, but Figure 4-1 the multiple electrode short strips in Figure 3-1 are obviously correspondingly arranged with the electrode strip in Figure 3-1 . Therefore, it can be considered that the electrode structures of the two are corresponding; moreover, the electrode strips of both are arranged along an arc and arranged as a fan as a whole, that is, the electrode arrangement directions of the two are the same. Therefore, when the heating electrode 20 is as shown in Figure 3-1 , the adjusting electrode 22 can be set as shown in Figure 4-1 , or can be set as shown in

[0095] Figure 3-2 Figure 3-1 shows a continuous distributed strip-shaped electrode strip, which is bent and coiled so that the whole has a fan shape, and the two end points of the electrode strip are on the same side; Figure 4-2 Figure 4-2 shows a discontinuous distributed electrode short strip. A plurality of electrode short strips are arranged at intervals to form an array structure similar to the shape of a wireless signal icon, and the whole has a fan shape. Although Figure 3-2 and Figure 4-2 the electrode structures shown are not exactly the same, but Figure 4-2 the multiple electrode short strips in Figure 3-2 are obviously correspondingly arranged with the electrode strip in Figure 3-2 . Therefore, it can be considered that the electrode structures of the two are corresponding; moreover, the electrode strips of both are arranged along an arc and arranged as a fan as a whole, that is, the electrode arrangement directions of the two are the same. Therefore, when the heating electrode 20 is as shown in Figure 3-2 , the adjusting electrode 22 can be set as shown in Figure 4-2 , or can be set as shown in

[0096] The heating electrodes 20 are arranged in multiple regions in an independent state. The multiple heating electrodes 20 of the main heating electrode layer 14 are arranged in the same plane, and the adjusting electrodes 22 of the adjusting electrode layer 16 are arranged in the same plane. The adjusting electrodes 22 and the corresponding heating electrodes 20 are arranged corresponding to each other axially, including the correspondence of the electrode structures and the correspondence of the electrode arrangement directions. Preferably, the main heating electrode layer 14 is divided into an inner ring heating electrode and an outer ring heating electrode in the radial direction, and the centers of the inner ring heating electrode and the outer ring heating electrode coincide with the center of the ceramic disc 12. More preferably, the inner ring heating electrode can be radially divided at equal intervals along the circumferential direction and are all electrically connected in a parallel structure. The outer ring heating electrodes are arranged at equal intervals along the circumferential direction, and multiple mutually independent outer ring heating electrodes are all electrically connected in a parallel structure. The parallel connection method can make each independent heating electrode have the same voltage value. Then, after the power is turned on, the resistance values of the heating electrodes in each parallel circuit become the only variable affecting the heat generation of each branch. The specific parallel length of the adjusting electrode 22 can be calculated according to the resistance value of the adjusting electrode 22 to be connected in parallel, and the two end points of the conducting member are controlled to access the adjusting electrode 22 of the corresponding length, such as the adjusting electrode strip only accessing 1 / 2 or 1 / 3 of the length, etc., so as to achieve the purpose of accurately controlling the resistance and heat generation.

[0097] In the embodiment as Figure 5 shown, two heating electrodes 20 are provided. One of the heating electrodes 20 is arranged at the central part of the ceramic disc 12, and the other heating electrode 20 surrounds the heating electrode 20 at the central part. One adjusting electrode 22 can be provided, and the adjusting electrode 22 can be arranged corresponding to the heating electrode 20 at the central part or the heating electrode 20 at the periphery. The two heating electrodes 20 can be connected in parallel or not. In other embodiments, the two heating electrodes 20 can also be arranged oppositely. For example, both of the two heating electrodes 20 are semi-circular structures, that is, the main heating electrode layer 14 is cut into two opposite semi-circles along a diameter direction. In other embodiments, two adjusting electrodes 22 can also be provided. The two adjusting electrodes 22 and the two heating electrodes 20 correspond to each other in the axial direction of the ceramic disc 12. The two heating electrodes 20 can be connected in parallel or not, and each adjusting electrode 22 can be selectively connected in parallel with the corresponding heating electrode 20.

[0098] In the embodiment as Figure 6In the illustrated embodiment, the heating electrodes 20 are provided with more than two. One of the heating electrodes 20 is disposed at the central portion of the ceramic disc 12, and some others (indicating a plurality, i.e., two or more) of the heating electrodes 20 are arranged evenly in a circumferential direction around the heating electrode 20 at the central portion. The plurality of heating electrodes 20 on the periphery may or may not be connected in parallel. Correspondingly, one adjusting electrode 22 may be provided and arranged axially corresponding to any one of the heating electrodes 20, or a plurality (two or more) of adjusting electrodes 22 may be provided, and each adjusting electrode 22 is arranged axially corresponding to one heating electrode 20. In this embodiment, one heating electrode 20 is provided at the central portion, six heating electrodes 20 are provided on the periphery, the number of the adjusting electrodes 22 is the same as that of the heating electrodes 20 and corresponds one by one, and each adjusting electrode 22 can be selectively connected in parallel with the corresponding heating electrode 20.

[0099] In the embodiment as Figure 7 In the illustrated embodiment, the heating electrodes 20 are provided with more than two. Some of them (indicating a plurality, i.e., two or more) of the heating electrodes 20 are disposed at the central portion of the ceramic disc 12 and arranged evenly in a circumferential direction of the ceramic disc 12. The plurality of heating electrodes 20 at the central portion may or may not be connected in parallel. Another heating electrode 20 is arranged around the plurality of heating electrodes 20 at the central portion, and the heating electrode 20 on the periphery is annular. Correspondingly, one adjusting electrode 22 may be provided and arranged axially corresponding to any one of the heating electrodes 20, or a plurality (two or more) of adjusting electrodes 22 may be provided, and each adjusting electrode 22 is arranged axially corresponding to one heating electrode 20. In this embodiment, six heating electrodes 20 are provided at the central portion, one heating electrode 20 is provided on the periphery, the number of the adjusting electrodes 22 is the same as that of the heating electrodes 20 and corresponds one by one, and each adjusting electrode 22 can be selectively connected in parallel with the corresponding heating electrode 20.

[0100] In the embodiment as Figure 8In the illustrated embodiment, a plurality of heating electrodes 20 are provided. For example, the number of heating electrodes 20 is set to be not less than 4. Some of them (representing a plurality, i.e., two or more than two) heating electrodes 20 are arranged at the central part of the ceramic disc 12 and are evenly distributed along the circumferential direction of the ceramic disc 12. Some other (representing a plurality, i.e., two or more than two) heating electrodes 20 are arranged in a surrounding manner outside the plurality of heating electrodes 20 at the central part. The plurality of heating electrodes 20 at the central part can be connected in parallel or not. The plurality of heating electrodes 20 outside can be connected in parallel or not. Correspondingly, one adjusting electrode 22 can be provided and is arranged axially corresponding to any one of the heating electrodes 20, or a plurality of adjusting electrodes 22 (two or more than two) are provided, and each adjusting electrode 22 is arranged axially corresponding to a heating electrode 20. Further, the number of heating electrodes 20 located outside is the same as the number of heating electrodes 20 located at the central part, and the plurality of heating electrodes 20 outside and the plurality of heating electrodes 20 at the central part are radially corresponding to each other one by one on the ceramic disc 12. In this embodiment, 6 heating electrodes 20 are provided at the central part, 6 heating electrodes 20 are provided outside, the 6 heating electrodes 20 outside and the 6 heating electrodes 20 at the central part are radially corresponding to each other one by one on the ceramic disc 12, the number of adjusting electrodes 22 is the same as the number of heating electrodes 20 and they are corresponding to each other one by one, and each adjusting electrode 22 can be selectively connected in parallel with the corresponding heating electrode 20.

[0101] Further, on the basis of Figure 8 the illustrated embodiment, in Figure 9 the illustrated embodiment, the plurality of heating electrodes 20 located outside are divided into a plurality of layers, and the plurality of layers are arranged successively outward along the radial direction of the ceramic disc 12. In this embodiment, the 6 heating electrodes 20 outside are divided into three layers, so that each layer contains 6 heating electrodes 20, that is, 18 heating electrodes 20 are provided outside. The 6 heating electrodes 20 in each layer can be connected in parallel or not. The number of adjusting electrodes 22 is the same as the number of heating electrodes 20 and they are corresponding to each other one by one, and each adjusting electrode 22 can be selectively connected in parallel with the corresponding heating electrode 20.

[0102] It should be noted that in this application, the parallel connection of the heating electrodes 20 in the inner ring and the parallel connection of the heating electrodes 20 in the outer ring mean that in the circuit design, the heating electrodes 20 in the inner ring form a separate loop, and the heating electrodes 20 in the outer ring form a separate loop. For example, after all the sub-circuits in the inner ring are connected in parallel, they are connected to the 1# positive and negative electrodes of the power supply, and after all the sub-circuits in the outer ring are connected in parallel, they are connected to the 2# positive and negative electrodes of the power supply. The outer ring refers to a single circular direction, that is, a layer. If there are multiple layers, there will be corresponding positive and negative electrode interfaces of multiple power supplies. The multiple heating electrodes 20 in each layer are connected to the positive and negative electrode interfaces of one power supply. There is no parallel relationship between the sub-circuits between the inner and outer rings. Different input voltages or currents are given to the 1# positive and negative electrodes and the 2# positive and negative electrodes to control the input power of the inner ring and the outer ring to be equal, so that the total heat generation of the inner ring and the total heat generation of the outer ring are equal. At the same time, if the heating electrodes 20 in the inner ring include multiple partitions, then all these sub-partitions in the inner ring are connected in parallel and then connected to the 1# positive and negative electrodes of the power supply; similarly, if the heating electrodes 20 in the outer ring include multiple partitions, then all these sub-partitions in the outer ring are connected in parallel and then connected to the 2# positive and negative electrodes of the power supply. The technical design of this application actually divides the entire disc into at least two temperature zones that can be individually controlled by adjusting the power supply output, that is, the inner ring and the outer ring. At the same time, the inner ring can be divided into multiple sub-partitions connected in parallel, and the outer ring can also be divided into multiple sub-partitions connected in parallel. The advantage of doing this is that first, by adjusting the power output of the two sets of interfaces of the power supply, the heating power of the inner ring and the outer ring can be made equal. Then, since all the sub-circuits in the inner ring are connected in parallel and the voltage of each branch is equal, the resistance becomes the only factor affecting the heat generation. The same is true for the outer ring.

[0103] In some embodiments, a heating electrode 20 may be provided at the central part of the main heating electrode layer 14, and three heating electrodes 20 are evenly arranged around it. In actual use, it is found that the thickness of the heating electrode 20 at the central part of the ceramic disc 12 is often relatively uniform. Therefore, the temperature uniformity of the area corresponding to the heating surface 18 at the central part is good, and there is no need to adjust the resistance by the parallel adjustment electrode 22. In this case, when adjusting the heating electrode layer 16, the adjustment electrode 22 may not be provided at the central part, but only at the peripheral area.

[0104] Among them, the formation method of the adjustment electrode 22 is not limited to the above-mentioned screen printing process, and it may also be a conductive coil with a predetermined electrode shape, such as a predetermined metal electrode made of materials such as silver, titanium, copper, nickel, tungsten, and molybdenum. The predetermined metal electrode is embedded in a preset groove on the upper surface of the ceramic substrate to form the adjustment heating electrode layer 16, and finally it is encapsulated with the rest of the layers into one body by methods such as low-temperature welding and bonding.

[0105] Please refer to Figure 10As shown, the present application also provides a temperature control method for a ceramic heater, where the ceramic heater is the ceramic heater 10 of the above embodiment; the temperature control method includes the following steps:

[0106] S1: Connect the main heating electrode layer 14 to a power source, and use a temperature measuring device to detect the temperature distribution of the heating surface 18;

[0107] S2: Adjust the output power of the power source so that the heating surface 18 only includes a normal area with normal temperature and an abnormal area with high temperature, and record the abnormal area with high temperature on the heating surface 18;

[0108] S3: Calculate the resistance value of the adjusting electrode 22 that needs to be connected in parallel with the heating electrode 20 corresponding to the abnormal area; and

[0109] S4: Connect the heating electrode 20 corresponding to the abnormal area in parallel with the adjusting electrode 22 with an adapted resistance value.

[0110] In a specific embodiment, a plurality of heating electrodes 20 and adjusting electrodes 22 are respectively provided, and the plurality of adjusting electrodes 22 and the plurality of heating electrodes 20 correspond one by one in the axial direction of the ceramic disc 12.

[0111] Among them, please also refer to Figures 11 to 13 As shown, step S2 further includes:

[0112] S2.1: Project the abnormal area along the axial direction of the ceramic disc 12 onto the back surface opposite to the heating surface 18 and mark it;

[0113] S2.2: Record the two side boundaries of the marked area along the circumferential direction of the ceramic disc 12 and mark them as the first isoelectric point and the second isoelectric point respectively until all marked areas are marked;

[0114] Step S3 further includes:

[0115] S3.1: Calculate the length of the adjusting electrode 22 that needs to be connected in parallel according to the resistance value of the adjusting electrode 22;

[0116] S3.2: Adjust the relative distance between the first isoelectric point and the second isoelectric point according to the length of the adjusting electrode 22;

[0117] Step S4 further includes:

[0118] S4.1: Process counterbores along the axial direction of the ceramic disc 12 at the positions of the first isoelectric point and the second isoelectric point until reaching the main heating electrode layer 14, and fill conductive filler in the counterbores to make the adjusting electrode conductively connected to the corresponding heating electrode, where the conductive filler is an implementation manner of the above conductive connection component;

[0119] S4.2: Continue to fill insulating and sealing filler in the counterbores to seal the conductive filler.

[0120] In a specific embodiment, the temperature regulation of the ceramic heater 10 is achieved as follows:

[0121] Connect the main heating electrode layer 14 of the ceramic heater 10 to a power source, and use a precision temperature measuring device to observe and record the temperature distribution of the heating surface 18. As described above, there is non-uniformity in the thickness of the main heating electrode film layer formed after printing and pressure sintering. When the changed ceramic heater electrode pattern is electrified and heated, since the heat generation of the main heating electrode layer 14 is proportional to the resistance values of each part of the heating electrode 20, the temperature in the area of the heating surface 18 corresponding to the small resistance is lower, while the temperature in the area of the large resistance is higher. In this application, since the individual heating electrodes 20 are electrically connected in a parallel structure, when electrified, the individual heating electrodes 20 theoretically have the same heat generation. However, for each individual heating electrode 20 itself, the non-uniform thickness makes it equivalent to a single-stroke heater with multiple different resistances connected in series.

[0122] Among them, the area with a lower temperature is actually the normal area. Specifically, the area with a higher temperature is defined relative to the area with a lower temperature. According to the test of the actual product, for example, the ceramic heater 10 requires a standard temperature control to be stable at 80°C ± 1°C. At this time, if there are 3 temperature regions: 75°C, 80°C, and 85°C, the power output of the power source needs to be adjusted to make the lowest temperature region of 75°C continue to rise to 80°C. At this time, the original 80°C and 85°C may become 83°C and 87°C. Then, the two temperature regions of 83°C and 87°C are the abnormal regions with higher temperatures to be adjusted. As Figure 14 shown, it includes two left and right test chart parts, and the two test chart parts are the measured heat generation conditions of the product. For example, the product temperature control standard is 78°C ± 1°C. P1 and P2 in the left figure meet the requirements, but the temperature of P3 at 76.9°C is slightly lower. Then, the input power needs to be continuously increased to raise the temperature of P3 to 77.7°C in the right figure. At this time, P1 changes from the original 77.7°C to 78.8°C, and P2 changes from 77.5°C to 77.9°C, still within the range. However, if the standard temperature is exceeded, the temperature regulation method in this application needs to be used at this time. For example: the central point temperature in the left figure is 80.5°C. When the input power is continuously increased and it develops into the situation in the right figure, the temperature of this central point actually exceeds 80.5°C. Using the above temperature regulation method, its temperature is controlled at 79.6°C.

[0123] Record the abnormal area with a relatively high local temperature on the heating surface 18, project this abnormal area along the axial direction of the stacking of the ceramic heater 10 onto the lower surface of the first substrate layer 28 or the third substrate layer 36 on the back, and mark this abnormal area. Record the two side boundaries of this abnormal area along the circumferential direction of the ceramic disk 12, and mark them as the first isoelectric point and the second isoelectric point, and so on until the boundary isoelectric points of all high-temperature abnormal areas are marked. Along the axial direction of the ceramic disk 12, drill counterbores from the positions of the first isoelectric point and the second isoelectric point to the main heating electrode layer 14, and fill the holes with conductive filler to conduct and achieve parallel electrical connection between the adjustment electrodes 22 and the corresponding upper-layer heating electrodes 20 at the first isoelectric point and the second isoelectric point. The conductive filler can adopt a material with a low resistivity to ensure that the self-resistance of the conductive filler will not accumulate to the resistance value of the adjustment electrode 22. The diameter of the counterbore should be as small as possible, for example, less than 1 mm, to minimize the self-resistance of the conductive filler. Subsequently, fill another layer of insulating and sealing filler in the counterbore to seal the conductive filler inside the counterbore. The conduction method here is not limited. It can be achieved by filling and curing conductive silver paste, or by using active soldering processes such as brazing. However, no matter which conduction method is adopted, the conduction medium must be a material with a high electrical conductivity. Specifically, the resistivity of the conduction medium can be ignored compared to the resistivity of a single adjustment electrode in parallel, to ensure that the resistance of the conduction medium itself will not affect the cumulative resistance when adjusting the parallel resistance. For the abnormal area with a relatively high local temperature on the heating surface 18, it indicates that the resistance value R1 of the heating electrode 20 corresponding to this area is relatively high. After conducting and connecting this area to the resistance band R2 of the corresponding adjustment electrode 22 in the lower layer, R1 and R2 are made to be in parallel, thereby reducing the overall resistance value R of this area and reducing the heat generation of this area, thus achieving temperature control. In addition, the resistance band of the adjustment electrode 22 can be a fixed resistance or a variable resistance. By moving the positions of the first isoelectric point and the second isoelectric point, the resistance value of the resistance band R2 of the adjustment electrode 22 can be changed. When the relative positions of the first isoelectric point and the second isoelectric point are far apart, then R1 is in parallel with a relatively large resistance R2. When the relative positions of the first isoelectric point and the second isoelectric point are close, then R1 is in parallel with a relatively small resistance R2. In this way, the size of the adjustment resistance R2 required to be connected in parallel at the main heating resistance band R1 in the temperature abnormal area can be calculated to achieve precise temperature control. For the area with normal temperature inside the heating surface 18, there is no need to conduct and connect in parallel the resistance band in the corresponding adjustment heating electrode layer 16, that is, this resistance band is not used, thereby enabling separate temperature control for each heating area and effectively ensuring the heating uniformity of the entire ceramic heater 10.

[0124] When the regulating electrode 22 is a discontinuous short strip of electrode, the conduction positions and distances of the first isoelectric point and the second isoelectric point on the short strip of electrode can be adjusted. By adjusting the relative distance between the first isoelectric point and the second isoelectric point on the short strip of electrode, the magnitude of the resistance R2 of the parallel-connected short strip of regulating electrode can be changed. For example, when the relative distance between the first isoelectric point and the second isoelectric point on the short strip of electrode is shortened, according to the resistance formula R = ρL / S, the resistance R2 decreases, which is equivalent to connecting a relatively small resistance in parallel at the main heating electrode R1. When the relative distance between the first isoelectric point and the second isoelectric point on the short strip of electrode increases, the resistance R2 immediately increases, which is equivalent to connecting a relatively large resistance in parallel at the main heating electrode R1. Therefore, the appropriate magnitude of the parallel regulating resistance can be selected according to the actual temperature difference of the ceramic heater 10 to achieve flexible and uniform temperature control. If there is no temperature anomaly in a certain main heating area, there is no need to connect the resistance strip in the corresponding regulating heating electrode layer, that is, the resistance strip is not used.

[0125] The present application also provides a method for preparing a ceramic heater. Please also refer to Figure 1 and Figure 15 as shown. The preparation method includes the following steps:

[0126] K1: Prepare the precursor layers of the first insulating layer 24, the main heating electrode layer 14, the second insulating layer 26, the regulating heating electrode layer 16, and the first substrate layer 28 respectively;

[0127] K2: Stack the precursor layer of the first insulating layer 24, the precursor layer of the main heating electrode layer 14, the precursor layer of the second insulating layer 26, the precursor layer of the regulating heating electrode layer 16, and the precursor layer of the first substrate layer 28 in sequence, and co-fire them integrally in a sintering device to obtain the ceramic heater 10 in which the first insulating layer 24, the main heating electrode layer 14, the second insulating layer 26, the regulating heating electrode layer 16, and the first substrate layer 28 are connected in sequence; and

[0128] K3: Perform temperature regulation on the ceramic heater 10 according to the above temperature regulation method, so that the heating electrode 20 corresponding to the abnormal area is connected in parallel and conducted with the regulating electrode 22 with an adapted resistance value.

[0129] More specifically, a flaky ceramic blank is prepared from ceramic powder, and the flaky ceramic blank is pre-sintered at a pre-sintering temperature lower than the sintering temperature to obtain a pre-sintered ceramic part with a certain strength, and the precursor layer of the first substrate layer 28 is obtained after milling and flat grinding. The precursor layer of the regulating heating electrode layer 16 is formed by screen printing the conductive paste on the upper surface of the precursor layer of the first substrate layer 28. The electrode film material of the regulating heating electrode layer 16 can be a mixture of metal materials such as tungsten, molybdenum, nickel, platinum and alumina ceramic materials. The precursor layer of the second insulating layer 26 can be a uniformly distributed ceramic powder, or a preformed unsintered flaky ceramic blank, preferably a uniformly distributed ceramic powder. The high-purity alumina ceramic powder with a purity greater than 99.7% is evenly spread on the upper surface of the precursor layer of the first substrate layer 28, and the precursor layer of the regulating heating electrode layer 16 is buried in the ceramic powder and the precursor layer of the first substrate layer 28, and the precursor layer of the second insulating layer 26 is obtained by pressing and milling together. The precursor layer of the main heating electrode layer 14 is formed by screen printing the conductive paste on the upper surface of the precursor layer of the second insulating layer 26. The electrode film material of the main heating electrode layer 14 can be a mixture of metal materials such as tungsten, molybdenum, nickel, platinum and alumina ceramic materials. The precursor layer of the first insulating layer 24 can be a uniformly distributed ceramic powder, or a preformed unsintered thin-sheet ceramic body, preferably a uniformly distributed ceramic powder. The high-purity alumina ceramic powder with a purity greater than 99.7% is evenly spread on the upper surface of the precursor layer of the second insulating layer 26, and the precursor layer of the main heating electrode layer 14 is buried in the precursor ceramic powder of the first insulating layer 24 and the inside of the precursor layer of the second insulating layer 26, and the precursor layer of the first insulating layer 24 is obtained after being pressed and milled together. The precursor layer of the first insulating layer 24, the precursor layer of the main heating electrode layer 14, the precursor layer of the second insulating layer 26, the precursor layer of the adjustment heating electrode layer 16 and the precursor layer of the first substrate layer 28 are arranged in sequence from top to bottom, and are pressed and co-fired together in a sintering device. After sintering, the precursor layer of the first insulating layer 24 forms the first insulating layer 24, the precursor layer of the main heating electrode layer 14 forms the main heating electrode layer 14, the precursor layer of the second insulating layer 26 forms the second insulating layer 26, the precursor layer of the adjustment heating electrode layer 16 forms the adjustment heating electrode layer 16, and the precursor layer of the first substrate layer 28 forms the first substrate layer 28. According to the temperature control method of the aforementioned ceramic heater, the positions of the isoelectric points on the back of the ceramic disk 12 are marked, and the countersunk holes are processed and filled with conductive fillers. The electrode belt of the regulating heating electrode in the abnormal temperature control area and the electrode belt of the corresponding main heating electrode are connected in parallel to achieve uniform control of the heating surface temperature.

[0130] This application also provides a method for preparing a ceramic heater. Please also refer to Figure 1 and Figure 16 As shown, the preparation method comprises the following steps:

[0131] L1: Prepare precursor layers of the first insulating layer 24, the main heating electrode layer 14, and the second insulating layer 26 respectively;

[0132] L2: Stack the precursor layer of the first insulating layer 24, the precursor layer of the main heating electrode layer 14, and the precursor layer of the second insulating layer 26 in sequence, and co-fire them integrally in a sintering device to obtain a first prefabricated structure in which the first insulating layer 24, the main heating electrode layer 14, and the second insulating layer 26 are connected in sequence;

[0133] L3: Provide a conductive coil and prepare the conductive coil into a predetermined shape;

[0134] L4: Prepare the precursor layer of the first substrate layer 28 and sinter it into a first substrate layer 28 with a groove on the surface adapted to the shape of the conductive coil in a sintering device, embed the conductive coil in the groove to form the adjustable heating electrode layer 16, and obtain a second prefabricated structure in which the adjustable heating electrode layer 16 and the first substrate layer 28 are connected in sequence;

[0135] L5: Connect the first prefabricated structure and the second prefabricated structure into one body to obtain a ceramic heater 10 in which the first insulating layer 24, the main heating electrode layer 14, the second insulating layer 26, the adjustable heating electrode layer 16, and the first substrate layer 28 are connected in sequence; and

[0136] L6: Perform temperature control on the ceramic heater 10 according to the temperature control method described above, so that the heating electrode 20 corresponding to the abnormal area is connected in parallel with the adjustable electrode 22 with an adapted resistance value.

[0137] Among them, the first prefabricated structure and the second prefabricated structure can be connected by a low-temperature welding method or by an adhesive bonding method, and the temperature of the low-temperature welding should be less than the sintering temperature; the conductive coil is one or more of silver, titanium, copper, nickel, tungsten, and molybdenum. The specific preparation method of this embodiment can refer to the Figure 15 embodiment shown above and will not be elaborated here.

[0138] This application also provides a preparation method of a ceramic heater. Please refer to Figure 2 and Figure 17 shown at the same time. This preparation method includes the following steps:

[0139] M1: Prepare precursor layers of the third insulating layer 30, the adsorption electrode layer 38, the second substrate layer 32, the main heating electrode layer 14, the fourth insulating layer 34, the adjustable heating electrode layer 16, and the third substrate layer 36 respectively;

[0140] M2: Stack the precursor layer of the third insulating layer 30, the precursor layer of the adsorption electrode layer 38, the precursor layer of the second substrate layer 32, the precursor layer of the main heating electrode layer 14, the precursor layer of the fourth insulating layer 34, the precursor layer of the regulating heating electrode layer 16, and the precursor layer of the third substrate layer 36 in sequence, and co-fire them integrally in a sintering device to obtain the ceramic heater 10 in which the third insulating layer 30, the adsorption electrode layer 38, the second substrate layer 32, the main heating electrode layer 14, the fourth insulating layer 34, the regulating heating electrode layer 16, and the third substrate layer 36 are connected in sequence; and

[0141] M3: Carry out temperature regulation on the ceramic heater 10 according to the above temperature regulation method, so that the heating electrode 20 corresponding to the abnormal area is connected in parallel with the regulating electrode 22 with an adapted resistance value.

[0142] Specifically, a sheet-shaped ceramic green body is prepared from ceramic powder. The sheet-shaped ceramic green body is pre-sintered at a pre-sintering temperature lower than the sintering temperature to obtain a pre-sintered ceramic part with a certain strength. After milling and surface grinding, the precursor layer of the second substrate layer 32 is obtained. The precursor layer of the third substrate layer 36 can be prepared in the same way. The precursor layer of the adsorption electrode layer 38 is formed by screen printing a conductor paste onto the upper surface of the precursor layer of the second substrate layer 32. The electrode thin film material of the adsorption electrode layer 38 can be a mixture of metal materials such as tungsten, molybdenum, nickel, platinum, etc. and alumina ceramic material. The precursor layer of the third insulating layer 30 can be uniformly distributed ceramic powder or a pre-formed unsintered sheet-shaped ceramic green body, preferably uniformly distributed ceramic powder. The high-purity alumina ceramic powder with a purity greater than 99.7% is uniformly spread on the upper surface of the precursor layer of the second substrate layer 32. The precursor layer of the adsorption electrode layer 38 is buried inside the ceramic powder and the precursor layer of the second substrate layer 32, and after being pressed and milled flat together, the precursor layer of the third insulating layer 30 is obtained. The precursor layer of the main heating electrode layer 14 is formed by screen printing a conductor paste onto the lower surface of the precursor layer of the second substrate layer 32. The electrode thin film material of the main heating electrode layer 14 can be a mixture of metal materials such as tungsten, molybdenum, nickel, platinum, etc. and alumina ceramic material. In the same way, the precursor layer of the regulating heating electrode layer 16 is formed on the upper surface of the precursor layer of the third substrate layer 36. The precursor layer of the fourth insulating layer 34 can be uniformly distributed ceramic powder or a pre-formed unsintered sheet-shaped ceramic green body, preferably uniformly distributed ceramic powder. The high-purity alumina ceramic powder with a purity greater than 99.7% is uniformly spread on the lower surface of the precursor layer of the second substrate layer 32. The precursor layer of the main heating electrode layer 14 is buried inside the precursor ceramic powder of the fourth insulating layer 34 and the precursor layer of the second substrate layer 32, and after being pressed and milled flat together, the precursor layer of the fourth insulating layer 34 is obtained. The precursor layer of the third insulating layer 30, the precursor layer of the adsorption electrode layer 38, the precursor layer of the second substrate layer 32, the precursor layer of the main heating electrode layer 14, the precursor layer of the fourth insulating layer 34, the precursor layer of the regulating heating electrode layer 16, and the precursor layer of the third substrate layer 36 are sequentially arranged in the top-down direction and co-fired under pressure in a sintering device. After sintering is completed, the precursor layer of the third insulating layer 30 forms the third insulating layer 30, the precursor layer of the adsorption electrode layer 38 forms the adsorption electrode layer 38, the precursor layer of the second substrate layer 32 forms the second substrate layer 32, the precursor layer of the main heating electrode layer 14 forms the main heating electrode layer 14, the precursor layer of the fourth insulating layer 34 forms the fourth insulating layer 34, the precursor layer of the regulating heating electrode layer 16 forms the regulating heating electrode layer 16, and the precursor layer of the third substrate layer 36 forms the third substrate layer 36.According to the temperature control method of the ceramic heater described above, mark the isoelectric point positions on the back of the ceramic disc 12, process the counterbore to encapsulate the conductive filler, and connect the electrode strip of the regulating heating electrode in the abnormal temperature control area and the electrode strip of the corresponding main heating electrode in parallel to achieve uniform control of the heating surface temperature.

[0143] This application also provides a preparation method of a ceramic heater. Please refer to Figure 2 and Figure 18 as shown. This preparation method includes the following steps:

[0144] N1: Prepare the precursor layers of the third insulating layer 30, the adsorption electrode layer 38, the second substrate layer 32, the main heating electrode layer 14, and the fourth insulating layer 34 respectively;

[0145] N2: Stack the precursor layer of the third insulating layer 30, the precursor layer of the adsorption electrode layer 38, the precursor layer of the second substrate layer 32, the precursor layer of the main heating electrode layer 14, and the precursor layer of the fourth insulating layer 34 in sequence, and co-fire them integrally in a sintering device to obtain a first precursor structure in which the third insulating layer 30, the adsorption electrode layer 38, the second substrate layer 32, the main heating electrode layer 14, and the fourth insulating layer 34 are connected in sequence;

[0146] N3: Provide a conductive coil and prepare the conductive coil into a predetermined shape;

[0147] N4: Prepare the precursor layer of the third substrate layer 36 and sinter it into a third substrate layer 36 with a groove on the surface adapted to the shape of the conductive coil in a sintering device, and embed the conductive coil in the groove to form the regulating heating electrode layer 16, obtaining a second precursor structure in which the regulating heating electrode layer 16 and the third substrate layer 36 are connected in sequence;

[0148] N5: Connect the first precursor structure and the second precursor structure into one body to obtain the ceramic heater 10 in which the third insulating layer 30, the adsorption electrode layer 38, the second substrate layer 32, the main heating electrode layer 14, the fourth insulating layer 34, the regulating heating electrode layer 16, and the third substrate layer 36 are connected in sequence; and

[0149] N6: Carry out temperature control on the ceramic heater 10 according to the temperature control method described above, so that the heating electrode 20 corresponding to the abnormal area is connected in parallel and conductively connected with the regulating electrode 22 with an adapted resistance value.

[0150] Among them, the first precursor structure and the second precursor structure can be connected by a low-temperature welding method or by an adhesive bonding method. The temperature of the low-temperature welding should be less than the sintering temperature; the conductive coil is one or more of silver, titanium, copper, nickel, tungsten, and molybdenum. For the specific preparation method of this embodiment, reference can be made to the embodiment shown in the above Figure 17 and will not be elaborated here.

[0151] It should be noted that in the above embodiments, the heating electrode and the adsorption electrode are both prepared by the method of integrated co-firing. Since the heating electrode needs to play the main function of heating and the adsorption electrode needs to play the main function of electrostatic adsorption, the method of integrated co-firing can ensure the reliability of the structure and function. The regulating electrode is auxiliary and used to compensate for the resistance of the heating electrode without playing the main function. Therefore, there can be other simpler preparation methods for the regulating electrode besides the integrated high-temperature co-firing, such as directly embedding a conductive coil on the substrate.

[0152] In summary, the present application provides a ceramic heater, its temperature control method and preparation method. A multi-heating-zone parallel-connected heating electrode structure is adopted, and an additional layer of regulating heating electrode layer is arranged on the back side of the main heating electrode layer. By the parallel compensation and synergy of the heating electrode and the regulating electrode, the resistance value of the heating electrode is controlled to make the resistance values of the heating electrodes corresponding to each area of the entire heating surface uniform, so as to achieve the purpose of uniform heat generation. Starting from the preparation end of the ceramic heater, the present application can achieve uniform temperature control in the production and processing stage of the ceramic heater without the need to be equipped with additional electronic components such as coupling switches and controllers at the terminal, nor special system integration and power control. After the temperature of the ceramic heater is regulated, it can be directly put into use without further debugging or other operations. It is an effective process technology with good technical reliability and easy to be applied in engineering.

[0153] The concepts described herein can be implemented in other forms without departing from their spirit and characteristics. The specific embodiments disclosed should be considered illustrative rather than restrictive. Therefore, the scope of the present application is defined by the appended claims rather than by the foregoing description. Any changes within the literal meaning and equivalent scope of the claims shall fall within the scope of these claims.

Claims

1. A ceramic heater, characterized in that: The invention comprises a ceramic disk (12), a main heating electrode layer (14) and an adjusting heating electrode layer (16) which are buried in the ceramic disk (12) and arranged at intervals along the axial direction. The ceramic disk (12) has a heating surface (18). The adjusting heating electrode layer (16) is located on a side of the main heating electrode layer (14) away from the heating surface (18). The main heating electrode layer (14) comprises a plurality of heating electrodes (20), and the plurality of heating electrodes (20) respectively correspond to different areas of the heating surface (18). The adjusting heating electrode layer (16) comprises at least one adjusting electrode (22), and the adjusting electrode (22) can be selectively connected in parallel with the corresponding heating electrode (20).

2. The ceramic heater according to claim 1, characterized in that The adjustment electrode (22) is provided at one, and the adjustment electrode (22) corresponds to the axial position of the heating electrode (20) on the ceramic disk (12); or, the adjustment electrode (22) is provided at multiple, and each adjustment electrode (22) corresponds to the axial position of a heating electrode (20) on the ceramic disk (12); or, the adjustment electrode (22) is provided at multiple and the number is the same as the number of the heating electrodes (20), and the multiple adjustment electrodes (22) correspond to the multiple heating electrodes (20) in the axial position of the ceramic disk (12) one by one.

3. The ceramic heater according to claim 1, characterized in that The ceramic heater (10) comprises a conducting member, through which the regulating electrode (22) is connected in parallel with the heating electrode (20), and the conducting member is arranged through an insulating layer between the regulating electrode (22) and the heating electrode (20).

4. The ceramic heater according to claim 1, characterized in that Two heating electrodes (20) are provided; one of the heating electrodes (20) is provided at the center of the ceramic disk (12), and the other heating electrode (20) surrounds the periphery of the heating electrode (20) at the center, or the two heating electrodes (20) are provided opposite to each other; accordingly, one adjustment electrode (22) is provided and is provided axially corresponding to any one of the heating electrodes (20), or two adjustment electrodes (22) are provided and are provided axially corresponding to the two heating electrodes (20) respectively; Alternatively, the number of the heating electrodes (20) is more than two, one of the heating electrodes (20) is arranged at the center of the ceramic disk (12), and the other heating electrodes (20) are arranged around the periphery of the heating electrode (20) at the center along the circumference of the ceramic disk (12), and the plurality of the heating electrodes (20) located at the periphery are connected in parallel; accordingly, one adjustment electrode (22) is provided and is arranged axially corresponding to any one of the heating electrodes (20), or a plurality of adjustment electrodes (22) are provided and each adjustment electrode (22) is arranged axially corresponding to a heating electrode (20); Alternatively, the heating electrodes (20) are arranged in more than two, some of which are arranged in the central part of the ceramic disk (12) and arranged along the circumference of the ceramic disk (12), and another heating electrode (20) surrounds the periphery of the multiple heating electrodes (20) in the central part, and the multiple heating electrodes (20) located in the central part are connected in parallel; accordingly, one adjustment electrode (22) is arranged and is axially corresponding to any one of the heating electrodes (20), or a plurality of adjustment electrodes (22) are arranged, and each adjustment electrode (22) is axially corresponding to a heating electrode (20).

5. The ceramic heater according to claim 1, characterized in that A plurality of heating electrodes (20) are provided, some of which are provided at the central portion of the ceramic disk (12) and arranged along the circumference of the ceramic disk (12), and other heating electrodes (20) are arranged around the periphery of the plurality of heating electrodes (20) arranged at the central portion; accordingly, one adjustment electrode (22) is provided and is axially corresponding to any one of the heating electrodes (20), or a plurality of adjustment electrodes (22) are provided, and each adjustment electrode (22) is axially corresponding to a heating electrode (20).

6. The ceramic heater according to claim 5, characterized in that The number of the heating electrodes (20) located at the periphery is the same as the number of the heating electrodes (20) located at the center, and the plurality of the heating electrodes (20) at the periphery and the plurality of the heating electrodes (20) at the center correspond one-to-one in the radial direction of the ceramic disk (12).

7. The ceramic heater according to claim 5, characterized in that The plurality of heating electrodes (20) located at the periphery are connected in parallel; and / or the plurality of heating electrodes (20) located at the center are connected in parallel.

8. The ceramic heater according to claim 5, characterized in that The plurality of heating electrodes (20) located at the periphery form a plurality of ring layers, and the plurality of ring layers are sequentially arranged outwardly along the radial direction of the ceramic disk (12).

9. The ceramic heater according to any one of claims 1 to 8, characterized in that: The heating electrode (20) is a continuously distributed electrode strip; the regulating electrode (22) is a continuously distributed electrode strip or a plurality of discontinuously distributed electrode short strips.

10. The ceramic heater according to any one of claims 1 to 8, characterized in that: The ceramic disk (12) comprises a first insulating layer (24), a second insulating layer (26) and a first substrate layer (28) which are connected in sequence; the main heating electrode layer (14) is encapsulated between the first insulating layer (24) and the second insulating layer (26); and the regulating heating electrode layer (16) is encapsulated between the second insulating layer (26) and the first substrate layer (28).

11. The ceramic heater according to any one of claims 1 to 8, characterized in that: The ceramic disk (12) comprises a third insulating layer (30), a second substrate layer (32), a fourth insulating layer (34) and a third substrate layer (36) which are connected in sequence; an adsorption electrode layer (38) is encapsulated between the third insulating layer (30) and the second substrate layer (32); the main heating electrode layer (14) is encapsulated between the second substrate layer (32) and the fourth insulating layer (34); and the regulating heating electrode layer (16) is encapsulated between the fourth insulating layer (34) and the third substrate layer (36).

12. A temperature control method for a ceramic heater, characterized in that: The ceramic heater is the ceramic heater (10) according to any one of claims 1 to 11; the temperature control method comprises the following steps: S1: connecting the main heating electrode layer (14) to a power source and detecting the temperature distribution of the heating surface (18) using a temperature measuring device; S2: adjusting the output power of the power supply so that the heating surface (18) includes only a normal area with normal temperature and an abnormal area with a relatively high temperature, and recording the abnormal area with a relatively high temperature on the heating surface (18); S3: calculating the resistance value of the regulating electrode that needs to be connected in parallel with the heating electrode (20) corresponding to the abnormal area; and S4: connecting the heating electrode (20) corresponding to the abnormal area in parallel with the adjusting electrode (22) with an adaptive resistance value.

13. The temperature control method of the ceramic heater according to claim 12, characterized in that: The heating electrode (20) and the regulating electrode (22) are provided in plurality, and the plurality of regulating electrodes (22) correspond one-to-one to the plurality of heating electrodes (20) in the axial direction of the ceramic disk (12); the step S2 further comprises: S2.1: Projecting the abnormal area along the axial direction of the ceramic disk (12) to the back side opposite to the heating surface (18) and marking it; S2.2: Recording the boundaries of the marking area on both sides along the circumferential direction of the ceramic disk (12) and marking them as the first isoelectric point and the second isoelectric point respectively, until all marking areas are marked; The step S3 further comprises: S3.1: Calculating the length of the regulating electrode (22) that needs to be connected in parallel according to the resistance value of the regulating electrode (22); S3.2: adjusting the relative distance between the first isoelectric point and the second isoelectric point according to the length of the adjustment electrode (22); The step S4 further comprises: S4.1: machining countersunk holes at the positions of the first isoelectric point and the second isoelectric point along the axial direction of the ceramic disk (12) until reaching the main heating electrode layer (14), and filling the countersunk holes with conductive fillers so that the regulating electrode (22) is conductively connected to the corresponding heating electrode (20); S4.2: Continue to fill the counterbore with insulating sealing filler to seal the conductive filler.

14. A method for preparing a ceramic heater, characterized in that: The preparation method comprises the following steps: K1: preparing precursor layers of a first insulating layer (24), a main heating electrode layer (14), a second insulating layer (26), an adjustment heating electrode layer (16) and a first substrate layer (28) respectively; K2: stacking the precursor layer of the first insulating layer (24), the precursor layer of the main heating electrode layer (14), the precursor layer of the second insulating layer (26), the precursor layer of the adjustment heating electrode layer (16), and the precursor layer of the first substrate layer (28) in sequence, and co-firing them in an integrated manner in a sintering device to obtain the ceramic heater (10) in which the first insulating layer (24), the main heating electrode layer (14), the second insulating layer (26), the adjustment heating electrode layer (16), and the first substrate layer (28) are connected in sequence; and K3: The temperature of the ceramic heater (10) is controlled according to the temperature control method described in any one of claims 12 to 13, so that the heating electrode (20) corresponding to the abnormal area is connected in parallel with the adjustment electrode (22) with an adaptive resistance value.

15. A method for preparing a ceramic heater, characterized in that: The preparation method comprises the following steps: L1: Preparing precursor layers of a first insulating layer (24), a main heating electrode layer (14) and a second insulating layer (26), respectively; L2: stacking the precursor layer of the first insulating layer (24), the precursor layer of the main heating electrode layer (14) and the precursor layer of the second insulating layer (26) in sequence, and co-firing them in an integrated manner in a sintering device to obtain a first prefabricated structure in which the first insulating layer (24), the main heating electrode layer (14) and the second insulating layer (26) are connected in sequence; L3: providing a conductive coil, and preparing the conductive coil into a predetermined shape; L4: preparing a precursor layer of a first substrate layer (28) and sintering it in a sintering device to form the first substrate layer (28) having a surface with a groove that matches the shape of the conductive coil, embedding the conductive coil in the groove to form an adjustable heating electrode layer (16), and obtaining a second prefabricated structure in which the adjustable heating electrode layer (16) and the first substrate layer (28) are connected in sequence; L5: connecting the first prefabricated structure and the second prefabricated structure into one body, so as to obtain the ceramic heater (10) in which the first insulating layer (24), the main heating electrode layer (14), the second insulating layer (26), the regulating heating electrode layer (16) and the first substrate layer (28) are connected in sequence; and L6: The temperature of the ceramic heater (10) is controlled according to the temperature control method described in any one of claims 12-13, so that the heating electrode (20) corresponding to the abnormal area is connected in parallel with the adjustment electrode (22) with an adaptive resistance value.

16. A method for preparing a ceramic heater, characterized in that: The preparation method comprises the following steps: M1: respectively preparing precursor layers of a third insulating layer (30), an adsorption electrode layer (38), a second substrate layer (32), a main heating electrode layer (14), a fourth insulating layer (34), a regulating heating electrode layer (16) and a third substrate layer (36); M2: stacking a precursor layer of the third insulating layer (30), a precursor layer of the adsorption electrode layer (38), a precursor layer of the second substrate layer (32), a precursor layer of the main heating electrode layer (14), a precursor layer of the fourth insulating layer (34), a precursor layer of the adjustment heating electrode layer (16), and a precursor layer of the third substrate layer (36) in sequence, and co-firing them in an integrated manner in a sintering device to obtain the ceramic heater (10) in which the third insulating layer (30), the adsorption electrode layer (38), the second substrate layer (32), the main heating electrode layer (14), the fourth insulating layer (34), the adjustment heating electrode layer (16), and the third substrate layer (36) are connected in sequence; and M3: The temperature of the ceramic heater (10) is controlled according to the temperature control method described in any one of claims 12-13, so that the heating electrode (20) corresponding to the abnormal area is connected in parallel with the adjustment electrode (22) with an adaptive resistance value.

17. A method for preparing a ceramic heater, characterized in that: The preparation method comprises the following steps: N1: preparing precursor layers of a third insulating layer (30), an adsorption electrode layer (38), a second substrate layer (32), a main heating electrode layer (14) and a fourth insulating layer (34) respectively; N2: stacking a precursor layer of the third insulating layer (30), a precursor layer of the adsorption electrode layer (38), a precursor layer of the second substrate layer (32), a precursor layer of the main heating electrode layer (14), and a precursor layer of the fourth insulating layer (34) in sequence, and co-firing them in an integrated manner in a sintering device to obtain a first precursor structure in which the third insulating layer (30), the adsorption electrode layer (38), the second substrate layer (32), the main heating electrode layer (14), and the fourth insulating layer (34) are connected in sequence; N3: providing a conductive coil, and preparing the conductive coil into a predetermined shape; N4: preparing a precursor layer of the third substrate layer (36) and sintering it in a sintering device to form the third substrate layer (36) having a groove on its surface that matches the shape of the conductive coil, embedding the conductive coil in the groove to form an adjustable heating electrode layer (16), and obtaining a second precursor structure in which the adjustable heating electrode layer (16) and the third substrate layer (36) are connected in sequence; N5: connecting the first precursor structure and the second precursor structure into one, so as to obtain the ceramic heater (10) in which the third insulating layer (30), the adsorption electrode layer (38), the second substrate layer (32), the main heating electrode layer (14), the fourth insulating layer (34), the regulating heating electrode layer (16) and the third substrate layer (36) are connected in sequence; and N6: The temperature of the ceramic heater (10) is controlled according to the temperature control method described in any one of claims 12 to 13, so that the heating electrode (20) corresponding to the abnormal area is connected in parallel with the adjustment electrode (22) with an adaptive resistance value.

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