Method for manufacturing solar cell, solar cell and photovoltaic module

Abstract

The embodiments of the present disclosure relate to the photovoltaic field and provide a method for manufacturing a solar cell, a solar cell, and a photovoltaic module. The method for manufacturing a solar cell includes: providing a first cell, the first cell including: a substrate, a first doped conductive layer and a second doped conductive layer alternately arranged on the back side, and a gap between the first doped conductive layer and the second doped conductive layer; a passivation layer is located on the surface of the first doped conductive layer, the surface of the second doped conductive layer, and the gap; performing photoluminescence imaging on the first cell to obtain an imaging brightness value corresponding to the passivation layer on the gap, and obtaining an analysis result based on the relationship between the imaging brightness value and the target brightness value, the analysis result being used to characterize whether the passivation effect of the first cell is qualified; forming a first electrode and a second electrode on the first cell with a qualified passivation effect; and testing the passivation effect of the position corresponding to the gap.

Description

Technical Field

[0001] The present disclosure relates to the photovoltaic field, and in particular to a method for manufacturing a solar cell, a solar cell, and a photovoltaic module. Background Art

[0002] With the gradual depletion of fossil fuels, solar cells are becoming increasingly popular as a new energy alternative. Solar cells convert sunlight into electricity. They utilize the photovoltaic principle to generate charge carriers, which are then extracted using electrodes, facilitating efficient utilization of the electrical energy.

[0003] A BC cell (Back Contact) is a solar cell structure with a back-contact structure where the positive and negative metal electrodes are arranged in an interdigitated pattern on the backside of the cell. The pn junction is located on the backside of the cell. The back junction refers to the pn junction being located on the backside of the cell.

[0004] At present, it is difficult to judge the passivation effect of the surface passivation layer between the different doping layers on the back of the BC battery. Summary of the Invention

[0005] The embodiments of the present disclosure provide a method for manufacturing a solar cell, a solar cell, and a photovoltaic module, which can at least know the passivation effect of the passivation layer at the position of the gap during the manufacturing process.

[0006] According to some embodiments of the present disclosure, on one hand, the embodiments of the present disclosure provide a method for manufacturing a solar cell, including: providing a first cell, the first cell including: a substrate, the substrate including a front side and a back side relative to each other, the back side having a first doped conductive layer and a second doped conductive layer alternately arranged, and a gap between the first doped conductive layer and the second doped conductive layer; a passivation layer, the passivation layer being located on a surface of the first doped conductive layer, a surface of the second doped conductive layer, and on the gap; performing photoluminescence imaging on the first cell to obtain an imaging brightness value corresponding to the passivation layer on the gap, and obtaining an analysis result based on a relationship between the imaging brightness value and a target brightness value, the analysis result being used to characterize whether the passivation effect of the first cell is qualified; forming a first electrode and a second electrode on the first cell with a qualified passivation effect, the first electrode being electrically connected to the first doped conductive layer, and the second electrode being electrically connected to the second doped conductive layer.

[0007] In some embodiments, the method of obtaining whether the passivation effect of the first battery cell is qualified based on the relationship between the imaging brightness value and the target brightness value includes: obtaining the average brightness value of the imaging brightness values of the n intervals, 1<n≤N, N is the number of intervals of the first battery cell, and n and N are both positive integers; obtaining the ratio of the difference between the average brightness value and the target brightness value and the difference between the target brightness value, if the difference ratio is less than or equal to the preset ratio, the passivation effect of the first battery cell is qualified, and if the difference ratio is greater than the preset ratio, the passivation effect of the first battery cell is unqualified.

[0008] In some embodiments, if the number of the intervals of the first battery cell is less than 10, the value of n / N is greater than 50%; if the number of the intervals of the first battery cell is greater than 10, and the value of n / N is 10%~50%, and the larger the value of N, the smaller the value of n / N.

[0009] In some embodiments, in the process of acquiring the imaging brightness value, the imaging brightness value of the passivation layer on part of the intervals is acquired, and the intervals for acquiring the imaging brightness value are separated by at least one interval.

[0010] In some embodiments, obtaining an average brightness value of the imaging brightness values of n of the intervals includes obtaining an average brightness value of the imaging brightness values of the entire passivation layer including the passivation layer on the interval surface and the passivation layer between the passivation layers on the interval surface.

[0011] In some embodiments, after obtaining whether the passivation effect of the first battery cell is qualified based on the relationship between the imaging brightness value and the target brightness value, it also includes: obtaining the difference between the imaging brightness values corresponding to the passivation layer at different intervals, and based on the relationship between the difference and the preset difference, correcting the analysis result to obtain a corrected result; wherein, if the difference is less than or equal to the preset difference, the corrected result indicates that the passivation effect of the first battery cell is qualified, and if the difference is greater than the preset difference, it indicates that the passivation effect of the first battery cell is unqualified.

[0012] In some embodiments, the method for obtaining the target brightness value includes: forming a control group cell, the control group cell including: a control substrate, and a first control doping layer, a second control doping layer, a control gap, and a control passivation layer located on the surface of the control substrate, the process parameters for forming the first control doping layer are the same as the process parameters for forming the first doped conductive layer, the process parameters for forming the second control doping layer are the same as the process parameters for forming the second doped conductive layer, and the process parameters for forming the control passivation layer are the same as the process parameters for forming the passivation layer; performing photoluminescence imaging processing to obtain the brightness value of the control passivation layer located in the control gap after imaging, and using the brightness value as the target brightness value.

[0013] In some embodiments, the method for obtaining the target brightness value includes: before forming the first doped conductive layer and the second doped conductive layer of the first cell, forming m first initial doped conductive layers, m second initial doped conductive layers, m initial intervals, and an initial passivation layer located on the surface of the initial intervals, where m is a positive integer greater than or equal to 1, and m is less than the number of the first doped conductive layers of the first cell; performing initial photoluminescence imaging processing to obtain an initial imaging brightness value corresponding to the initial passivation layer on the surface of the initial interval, wherein the initial imaging brightness value is the target brightness value; and forming the first doped conductive layer, the second doped conductive layer, and the interval on the basis of the first initial doped conductive layer, the second initial doped conductive layer, and the initial interval.

[0014] In some embodiments, the first initial doped conductive layer and the second initial doped conductive layer are formed to cover a portion of the substrate, and the method of forming the first doped conductive layer, the second doped conductive layer and the gap includes: forming a protective layer, the protective layer covering the surface of the initial passivation layer; forming a third initial doped conductive layer, a fourth initial doped conductive layer and a second initial passivation layer on the back side where the first initial doped conductive layer and the second initial doped conductive layer are not formed, the third initial doped conductive layer and the first initial doped conductive layer constitute the first doped conductive layer, the second initial doped conductive layer and the fourth initial doped conductive layer constitute the second doped conductive layer, and the initial passivation layer and the second initial passivation layer constitute the passivation layer; and removing the protective layer.

[0015] In some embodiments, the first initial doped conductive layer and the second initial doped conductive layer are formed to cover the entire back side, and the method of forming the first doped conductive layer, the second doped conductive layer and the gap includes: removing part of the first initial doped conductive layer and forming a fifth initial doped conductive layer; removing part of the second initial doped conductive layer and forming a sixth initial doped conductive layer, the remaining first initial doped conductive layer and the sixth initial doped conductive layer constitute the first doped conductive layer, and the remaining second initial doped conductive layer and the fifth initial doped conductive layer constitute the second doped conductive layer.

[0016] In some embodiments, the process parameters of the photoluminescence imaging process include: exposure time 0.1s-0.5s, luminous intensity 0.5cd-1cd, and wavelength 920nm.

[0017] In some embodiments, the process of forming the first doped conductive layer and the second doped conductive layer also includes: controlling the proportion of the first doped conductive layer in the orthographic projection area of the substrate surface to be the same as the proportion of the second doped conductive layer in the orthographic projection area of the substrate surface.

[0018] According to some embodiments of the present disclosure, another aspect of the present disclosure further provides a solar cell formed by the above-mentioned method for manufacturing a solar cell.

[0019] According to some embodiments of the present disclosure, another aspect of the embodiments of the present disclosure further provides a photovoltaic assembly, comprising: a cell string, the cell string comprising: a plurality of solar cells formed by the manufacturing method of the above-mentioned solar cell, or comprising the above-mentioned solar cells; a welding ribbon, the welding ribbon being electrically connected to at least two solar cells to connect adjacent solar cells in series; an encapsulation film, the encapsulation film being used to cover the surface of the cell string; and a cover plate, the cover plate being used to cover the surface of the encapsulation film away from the cell string.

[0020] The technical solution provided by the embodiments of the present disclosure has at least the following advantages: during the process of forming a solar cell, after forming the passivation layer, photoluminescence imaging processing is performed, and the passivation effect of the first cell is determined by obtaining the imaging brightness value of the passivation layer. For the testing process, the solution of obtaining an imaging image using photoluminescence imaging processing is convenient and low-cost, which can meet the production requirements of solar cells. At the same time, the test results can also provide good feedback on the passivation effect at the interval position, so that whether the passivation effect of the first cell is qualified can be quickly determined, which can improve the convenience and accuracy of selecting the first cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A flow chart of a method for manufacturing a solar cell provided in one embodiment of the present disclosure;

[0023] Figures 2 to 4 A schematic structural diagram corresponding to each step of a method for manufacturing a solar cell provided in one embodiment of the present disclosure;

[0024] Figure 5 A schematic structural diagram of a control battery cell provided in one embodiment of the present disclosure;

[0025] Figure 6 A schematic diagram of an image obtained by performing photoluminescence imaging on a control cell according to an embodiment of the present disclosure;

[0026] Figures 7 to 9 A schematic structural diagram corresponding to each step of a method for manufacturing a solar cell provided by another embodiment of the present disclosure;

[0027] Figures 10 to 12 A schematic structural diagram corresponding to each step of a method for manufacturing a solar cell provided by another embodiment of the present disclosure;

[0028] Figure 13 A partial three-dimensional schematic diagram of a photovoltaic assembly provided by an embodiment of the present disclosure;

[0029] Figure 14 A schematic partial cross-sectional view of a photovoltaic module provided in one embodiment of the present disclosure.

[0030] Description of reference numerals:

[0031] 100, first cell; 110, substrate; 120, front side; 130, back side; 140, first doped conductive layer; 150, second doped conductive layer; 160, passivation layer; 170, tunneling layer; 180, gap; 101, first electrode; 102, second electrode; 103, control cell; 113, control substrate; 143, first control doped layer; 153, second control doped layer; 163, control passivation layer; 183, control gap.

[0032] 200, first battery cell; 210, substrate; 220, front surface; 230, back surface; 240, first doped conductive layer; 250, second doped conductive layer; 260, passivation layer; 270, tunneling layer; 204, first initial doped conductive layer; 205, second initial doped conductive layer; 207, initial gap; 206, initial passivation layer; 280, gap; 208, protective layer; 214, third initial doped conductive layer; 215, fourth initial doped conductive layer; 216, second initial passivation layer.

[0033] 300, first battery cell; 310, substrate; 320, front surface; 330, back surface; 304, first initial doped conductive layer; 305, second initial doped conductive layer; 340, first doped conductive layer; 350, second doped conductive layer; 360, passivation layer; 370, tunneling layer; 380, spacer; 315, fifth initial doped conductive layer; 316, sixth initial doped conductive layer; 306, initial passivation layer; 307, initial spacer.

[0034] 40. Solar cell; 41. Encapsulation film; 42. Cover plate; 43. Solder ribbon. DETAILED DESCRIPTION

[0035] Currently, in the process of forming back-contact cells, a gap is usually set between the first doped conductive layer and the second doped conductive layer. As the number of gaps increases, it becomes increasingly difficult to passivate the gap positions. Therefore, accurately characterizing the passivation effect in this area becomes very important for improving the conversion efficiency of solar cells. However, testing the passivation effect at the gap positions is difficult and does not meet the production requirements of solar cells.

[0036] The disclosed embodiments provide a method for manufacturing a solar cell. During the process of forming the solar cell, after forming a passivation layer, photoluminescence imaging is performed. The passivation effect of a first cell is determined by obtaining an imaging brightness value of the passivation layer. For the testing process, the method of obtaining an imaging image using photoluminescence imaging is convenient and low-cost, meeting the production requirements of the solar cell. Furthermore, the test results can provide good feedback on the passivation effect at interval positions, thereby quickly determining whether the passivation effect of the first cell is acceptable, thereby improving the convenience and accuracy of selecting the first cell.

[0037] In the description of the embodiments of the present disclosure, technical terms such as "first" and "second" are used solely to distinguish between different objects and should not be understood to indicate or imply relative importance or to implicitly specify the quantity, specific order, or primary and secondary relationship of the technical features indicated. In the description of the embodiments of the present disclosure, "plurality" means more than two, unless otherwise specifically defined.

[0038] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present disclosure. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0039] In the description of the embodiments of the present disclosure, the term "and / or" is merely a description of an association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B can represent the following three situations: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0040] In the description of the embodiments of the present disclosure, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0041] In the description of the embodiments of the present disclosure, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the embodiments of the present disclosure.

[0042] In the description of the embodiments of the present disclosure, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and they can refer to internal connectivity between two components or interaction between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present disclosure based on specific circumstances.

[0043] In the accompanying drawings corresponding to the embodiments of the present disclosure, the thickness and area of layers are exaggerated for better understanding and ease of description. When a component (such as a layer, film, region, or substrate) is described as being on or on the surface of another component, the component may be "directly" located on the surface of the other component, or a third component may be present between the two components. Conversely, when a component is described as being on the surface of another component, or as being formed or disposed on the surface of one component, it indicates that there is no third component between the two components. Furthermore, when a component is described as being "substantially" formed on another component, this means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.

[0044] In the description of the embodiments of the present disclosure, when a component is referred to as "including" another component, unless otherwise specified, this does not exclude other components, and other components may further be included. Furthermore, when a component such as a layer, film, region, or plate is referred to as being "on" another component, it may be "directly on" the other component (i.e., located on the surface of the other component with no other components between them) or another component may be present between them. Furthermore, when a component such as a layer, film, region, or plate is referred to as being "directly on" another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, this means that no other components are located between them.

[0045] The terms used herein in the description of the various embodiments are intended only to describe the specific embodiments and are not intended to be limiting. As used in the description of the various embodiments and the appended claims, "the component" is intended to include the plural form unless the context clearly indicates otherwise. A component includes a layer, film, region, or plate.

[0046] The following describes various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the various embodiments of the present disclosure to facilitate a better understanding of the present disclosure. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can still be implemented.

[0047] refer to Figures 1 to 6 , Figure 1 A flow chart of a method for manufacturing a solar cell provided in one embodiment of the present disclosure; Figures 2 to 4 This is a schematic structural diagram corresponding to each step of a method for manufacturing a solar cell provided by an embodiment of the present disclosure, wherein: Figure 2 A cross-sectional view of a first battery cell provided in one embodiment of the present disclosure; Figure 3 A schematic diagram of an image obtained by performing photoluminescence imaging on a first cell according to an embodiment of the present disclosure; Figure 4A schematic diagram of a structure for forming a first electrode and a second electrode on a first cell with a qualified passivation effect according to an embodiment of the present disclosure is provided. Figure 5 A schematic structural diagram of a control battery cell provided in one embodiment of the present disclosure; Figure 6 A schematic diagram of an image obtained by performing photoluminescence imaging on a control cell according to an embodiment of the present disclosure.

[0048] In some embodiments, a method for manufacturing a solar cell may include: S10: providing a first cell 100, the first cell 100 including: a substrate 110, the substrate 110 including a front surface 120 and a back surface 130 relative to each other, the back surface 130 having a first doped conductive layer 140 and a second doped conductive layer 150 arranged alternately, and a gap 180 between the first doped conductive layer 140 and the second doped conductive layer 150; a passivation layer 160, the passivation layer 160 being located on the surface of the first doped conductive layer 140, the surface of the second doped conductive layer 150 and the gap 180.

[0049] The method for manufacturing a solar cell may further include: S11: performing photoluminescence imaging processing on the first cell 100, obtaining an imaging brightness value corresponding to the passivation layer 160 on the gap 180, and obtaining an analysis result based on the relationship between the imaging brightness value and the target brightness value. The analysis result is used to characterize whether the passivation effect of the first cell 100 is qualified.

[0050] The method for manufacturing a solar cell may further include: S12: forming a first electrode 101 and a second electrode 102 on a first cell 100 with a qualified passivation effect, wherein the first electrode 101 is electrically connected to the first doped conductive layer 140 , and the second electrode 102 is electrically connected to the second doped conductive layer 150 .

[0051] The disclosed embodiments provide a method for manufacturing a solar cell. During the solar cell manufacturing process, after forming the passivation layer 160, photoluminescence imaging is performed. The passivation effect of the first cell 100 is determined by obtaining the image brightness value of the passivation layer 160. For the testing process, the method of obtaining an image using photoluminescence imaging is convenient and low-cost, meeting the manufacturing requirements of the solar cell. Furthermore, the test results can also provide good feedback on the passivation effect at the interval 180, thereby quickly determining whether the passivation effect of the first cell 100 is acceptable, thereby improving the convenience and accuracy of selecting the first cell 100.

[0052] In some embodiments, the first battery cell 100 may be an initial battery cell. In the process of providing the first battery cell 100, the first battery cells 100 may be provided in batches, and then the batches of battery cells may be subjected to photoluminescence imaging processing. In other embodiments, the process of providing the first battery cell 100 may also be to provide a single first battery cell 100.

[0053] The process of forming the first cell 100 may include providing a substrate 110 and polishing the substrate 110. The polishing process can remove impurities on the surface of the substrate 110 and make the surface of the substrate 110 relatively flat. The thickness of the substrate 110 may be 100 μm to 200 μm, and the resistivity may be 1 ohm-cm to 10 ohm-cm.

[0054] A first intrinsic polysilicon layer is formed on the back side 130 of the substrate 110. The first intrinsic polysilicon layer can be formed by using an LPCVD method. The process parameters of LPCVD may include: a deposition temperature of 400°C to 650°C and a deposition time of 40min to 200min.

[0055] The first intrinsic polysilicon layer is doped to form an initial doped conductive layer. The doping process parameters may include: diffusion temperature of 600°C to 950°C, time of 60min to 180min. In the process of forming the initial doped conductive layer, a first glass layer is also formed. The thickness of the first glass layer is 60nm to 80nm.

[0056] Based on the pattern of the solar cell, a sampling laser process is used to irradiate the first glass layer to partially ablate the first glass layer. A texturing process is then performed to remove the initial doped conductive layer at locations corresponding to the ablated first glass layer, thereby forming a first doped conductive layer 140. Simultaneously, the texturing process also forms a textured surface on the substrate 110 corresponding to the locations where the first glass layer was ablated. In other words, the substrate 110 includes a first region and a second region spaced 180° apart. The laser process irradiates the first glass layer, the orthographic projection of which is located in the second region, and the texturing process removes the initial doped conductive layer located in the second region.

[0057] Then, the second doped conductive layer 150 is formed by adopting the above-mentioned method of forming the first doped conductive layer 140. The second doped conductive layer 150 is located in the second region. The method of forming the second doped conductive layer 150 is the same as that of forming the first doped conductive layer 140. The difference lies in the different doping ion types, which will not be repeated here. There is also a gap 180 between the formed second doped conductive layer 150 and the formed first doped conductive layer 140.

[0058] Finally, a passivation layer 160 is formed, covering the surfaces of the first doped conductive layer 140, the spacer 180, and the second doped conductive layer 150. The material of the passivation layer 160 may include amorphous silicon, silicon oxide, microcrystalline silicon, or a stack of silicon oxide and silicon carbide. The material of the passivation layer 160 may also be a hydrogenated material. The thickness of the formed passivation layer 160 may be 2nm to 30nm, thus forming the first cell 100. The formed passivation layer 160 may also cover the front surface 120 of the substrate 110.

[0059] Before forming the first doped conductive layer 140 , the process may further include forming a tunneling layer 170 .

[0060] In some embodiments, determining whether the passivation effect of the first cell 100 is qualified based on the relationship between the imaging brightness value and the target brightness value includes: obtaining an average brightness value of n imaging brightness values at intervals 180, where 1<n≤N, N is the number of intervals 180 of the first cell 100, and both n and N are positive integers; obtaining a ratio of the difference between the average brightness value and the target brightness value to the difference between the target brightness value; if the difference ratio is less than or equal to a preset ratio, the passivation effect of the first cell 100 is qualified; if the difference ratio is greater than the preset ratio, the passivation effect of the first cell 100 is unqualified. Obtaining the average brightness value of n imaging brightness values at intervals 180 can improve the accuracy of the test process, avoid individual cases that may lead to misjudgment of the first cell 100, and reduce measurement errors.

[0061] For example, the target brightness value is 100, and the average brightness value of the n imaging brightness values at an interval of 180 is 90, then the corresponding difference ratio is 10%. The difference ratio is compared with the preset ratio. If the difference ratio is large, the passivation effect of the first battery cell 100 is unqualified. If the difference ratio is small, the passivation effect of the first battery cell 100 is qualified.

[0062] In some embodiments, the preset ratio can be set to 20%, that is, when the ratio of the difference between the average brightness value and the target brightness value to the difference between the target brightness value is less than 20%, it can be determined that the passivation effect of the first battery cell 100 is qualified.

[0063] It should be noted that the difference ratio here refers to the ratio of the difference between the average brightness value and the target brightness value to the target brightness value.

[0064] In other embodiments, the preset ratio can also be adjusted according to the number of intervals 180. The smaller the number of intervals 180, the smaller the preset ratio can be, and the larger the number of intervals 180, the larger the preset ratio can be. For the process, the more intervals 180 there are, the more unstable the passivation effect of the passivation layer 160 is. Due to process limitations, it is difficult to control the passivation effect of the passivation layer 160 at the corresponding position of each interval 180. Therefore, the preset ratio can be appropriately adjusted to meet the production requirements of solar cells.

[0065] In some embodiments, if the number of intervals 180 in the first cell 100 is less than 10, the value of n / N is greater than 50%. If the number of intervals 180 in the first cell 100 is greater than 10, and the value of n / N is between 10% and 50%, and the larger the value of N, the smaller the value of n / N. By distinguishing the number of intervals 180 in the first cell 100, the sampling is differentiated, thereby controlling the number of samples and the time required for the sampling process. When the number of intervals 180 in the first cell 100 is too large, the number of samples is kept at a certain ratio, thereby reducing the degree of sampling error and improving the reliability of the analysis results.

[0066] For the first cell 100, the number of intervals 180 within the first cell 100 provided at the same time can be the same, that is, at the same time, the specifications of a batch of first cell 100 provided are the same, thereby avoiding frequent adjustment of the sampling quantity during the production process of the solar cell and reducing the process complexity of the solar cell.

[0067] In some embodiments, during the process of acquiring the imaging brightness value, the imaging brightness value of the passivation layer 160 on a portion of the intervals 180 is acquired, and the intervals 180 for acquiring the imaging brightness value are separated by at least one interval 180. In other words, during the process of acquiring the imaging brightness value, the selected sampling targets are non-adjacent. For example, in the arrangement direction of the intervals 180, the selected sampling targets are the first interval, the third interval, the sixth interval, the ninth interval, and so on. By controlling the non-adjacent sampling targets, the intervals 180 for acquiring the imaging brightness value can be arranged relatively evenly on the first cell 100, thereby improving the accuracy of the acquired average brightness value and improving the accuracy of the analysis structure.

[0068] It should be noted that the above-mentioned sampling target refers to the interval 180 at which the imaging brightness value is obtained. For example, the imaging brightness values of the first interval, the third interval, the sixth interval and the ninth interval are obtained. Then, the first interval, the third interval, the sixth interval and the ninth interval are used as sampling targets for obtaining the average brightness value.

[0069] In some embodiments, in the process of obtaining the average brightness value, a random sampling method may be selected. The random sampling method can avoid systematic deviations and avoid distortion of the obtained average brightness value.

[0070] In some embodiments, obtaining an average brightness value of the imaging brightness values of n intervals 180 includes obtaining an average brightness value of the imaging brightness values of the entire passivation layer 160, including the passivation layer 160 on the surface of the interval 180 and the passivation layer 160 between the passivation layer 160 on the surface of the interval 180. For the intervals 180, in the pattern formed after the photoluminescence imaging process, the pattern formed by the intervals 180 appears as a line, and obtaining imaging brightness values of the line shape is difficult. Therefore, in the process of obtaining the imaging brightness values, selecting the brightness values of the passivation layer 160 on the surface of the interval 180 and the passivation layer 160 between the passivation layer 160 on the surface of the interval 180 as sampling targets can reduce the difficulty of obtaining the imaging brightness values, facilitate reducing the time to obtain analysis results, and shorten the process time of the solar cell manufacturing method.

[0071] It can be understood that, in the process of performing photoluminescence imaging processing on the first cell 100, the pattern obtained is the pattern of the entire surface of the first cell 100. When the average brightness value of the imaging brightness values of n intervals 180 is obtained by obtaining the average brightness value of the imaging brightness values of the passivation layer 160 on the surface of the interval 180 and the passivation layer 160 between the passivation layers 160 on the surface of the interval 180, the imaging brightness values of the passivation layer 160 on the surface of the corresponding number of intervals 180 and the passivation layer 160 between the passivation layers 160 on the surface of the interval 180 can be directly selected by box selection, and the average brightness value can be directly obtained, thereby further reducing the difficulty of obtaining the average brightness value.

[0072] It should be noted that the frame selection method refers to directly selecting an area through the tool.

[0073] The passivation effect is the ability of the passivation layer 160 to reduce the recombination of carriers, and for the first doped conductive layer 140 and the second doped conductive layer 150, the passivation effect of the passivation layer 160 formed on the surface of the first doped conductive layer 140 and the second doped conductive layer 150 is relatively stable, but the passivation layer 160 formed at the corresponding position of the gap 180 is usually smaller in width due to the smaller width of the gap 180, and there is usually a height difference between the first doped conductive layer 140 and the second doped conductive layer 150, which will cause the gap 180 to be stepped as a whole, further resulting in the passivation ability of the passivation layer 160 formed at the corresponding position of the gap 180 being unstable. Therefore, in the process of obtaining the analysis results, the passivation layer 160 formed at the corresponding position of the gap 180 plays a major role influencing the passivation effect. By judging the passivation effect of the passivation layer 160 formed at the corresponding position of the gap 180, the passivation effect of the first battery cell 100 can be judged.

[0074] The passivation target of the passivation layer 160 located in the gap 180 is the substrate 110, the passivation target of the passivation layer 160 located on the surface of the first doped conductive layer 140 is the first doped conductive layer 140 and the substrate 110, and the passivation target of the passivation layer 160 located on the surface of the second doped conductive layer 150 is the second doped conductive layer 150 and the substrate 110.

[0075] In some embodiments, after obtaining whether the passivation effect of the first battery cell 100 is qualified based on the relationship between the imaging brightness value and the target brightness value, it also includes: obtaining the difference between the imaging brightness values corresponding to the passivation layer 160 on different intervals 180, and based on the relationship between the difference and the preset difference, correcting the analysis result to obtain a corrected result; wherein, if the difference is less than or equal to the preset difference, the corrected result indicates that the passivation effect of the first battery cell 100 is qualified, and if the difference is greater than the preset difference, it indicates that the passivation effect of the first battery cell 100 is unqualified.

[0076] In other words, after determining the relationship between the image brightness value and the target brightness value, the imaging brightness values of the passivation layer 160 at different intervals 180 are also compared with each other to determine the consistency of the process for forming the passivation layer 160. If the difference between the imaging brightness values corresponding to the passivation layer 160 at different intervals 180 is greater than the preset difference, it indicates that in the process of forming the passivation layer 160, the difference between the passivation layers 160 formed at different positions is too large. By determining the consistency of the process for forming the passivation layer 160 while determining the passivation effect of the passivation layer 160, the reliability of the analysis results can be further improved, thereby further improving the reliability of the formed solar cell.

[0077] Combined with reference Figure 2 、 Figure 3 、 Figure 5 and Figure 6In some embodiments, a method for obtaining a target brightness value includes: forming a control cell 103, the control cell 103 including: a control substrate 113, and a first control doping layer 143, a second control doping layer 153, a control gap 183, and a control passivation layer 163 located on at least the surface of the control gap 183, wherein the process parameters for forming the first control doping layer 143 are the same as the process parameters for forming the first doped conductive layer 140, the process parameters for forming the second control doping layer 153 are the same as the process parameters for forming the second doped conductive layer 150, and the process parameters for forming the control passivation layer 163 are the same as the process parameters for forming the passivation layer 160; performing photoluminescence imaging processing to obtain a brightness value of the control passivation layer 163 located in the control gap 183 after imaging, and using the brightness value as the target brightness value.

[0078] In other words, the same process is used to form the control cell, in which only a first control doping layer 143, a second control doping layer 153, a control gap 183, and a control passivation layer 163 at least located on the surface of the control gap 183 are formed. For the control cell, since there is only one control gap 183, the passivation effect of the control passivation layer 163 formed in the control cell is optimal. In this way, the brightness value corresponding to the optimal passivation effect is used as the target brightness value, and the degree of change in the passivation effect as the number of gaps 180 increases can be further fed back, thereby improving the reliability of the formed solar cell.

[0079] In some embodiments, the process parameters for photoluminescence imaging include: exposure time of 0.1s to 0.5s, luminous intensity of 0.5cd to 1cd, and wavelength of 920nm. The photoluminescence imaging process involves irradiating the surface of the first cell 100 with light of a specific wavelength. The photon energy is greater than the band gap of the substrate 110 material, exciting valence band electrons to transition to the conduction band, generating electron-hole pairs. The resulting photons are then released through radiative recombination, and an image is captured using a camera or other imaging device.

[0080] In some embodiments, the process of forming the first doped conductive layer 140 and the second doped conductive layer 150 further includes controlling the proportion of the orthographic projection area of the first doped conductive layer 140 on the surface of the substrate 110 to be the same as the proportion of the orthographic projection area of the second doped conductive layer 150 on the surface of the substrate 110. In other words, the area of the first doped conductive layer 140 is controlled to be the same as the area of the second doped conductive layer 150. By controlling the area of the first doped conductive layer 140 and the area of the second doped conductive layer 150 to be the same, interference from other factors can be reduced when obtaining analysis results, thereby improving the reliability of the analysis results and further improving the reliability of the formed solar cell.

[0081] It should be noted that the proportion here refers to the ratio of the orthographic projection area to the base surface area.

[0082] In some embodiments, the length, width, and thickness of the first doped conductive layer 140 and the length, width, and thickness of the second doped conductive layer 150 within the same solar cell can be controlled to be equal. This minimizes the difference in the passivation layer 160 corresponding to different intervals 180 during measurement, and reduces interference from other factors, thereby improving the reliability of the analysis results and further improving the reliability of the resulting solar cell.

[0083] The disclosed embodiments provide a method for manufacturing a solar cell. During the solar cell manufacturing process, after forming the passivation layer 160, photoluminescence imaging is performed. The passivation effect of the first cell 100 is determined by obtaining the image brightness value of the passivation layer 160. For the testing process, the method of obtaining an image using photoluminescence imaging is convenient and low-cost, meeting the manufacturing requirements of the solar cell. Furthermore, the test results can also provide good feedback on the passivation effect at the interval 180, thereby quickly determining whether the passivation effect of the first cell 100 is acceptable, thereby improving the convenience and accuracy of selecting the first cell 100.

[0084] Another embodiment of the present disclosure further provides a method for manufacturing a solar cell. The difference from the above embodiment is that the method for obtaining the target brightness value is different. The method for manufacturing a solar cell provided by another embodiment of the present disclosure will be described below with reference to the accompanying drawings. It should be noted that the parts that are the same or corresponding to the above can refer to the above embodiment and will not be repeated below.

[0085] refer to Figures 7 to 9 , Figures 7 to 9 This is a schematic structural diagram corresponding to each step of a method for manufacturing a solar cell provided by another embodiment of the present disclosure, wherein: Figure 7 This is a schematic diagram of the structure of forming the first initial doped conductive layer and the second initial doped conductive layer. Figure 8 This is an image obtained by performing photoluminescence processing on the first initial doped conductive layer and the second initial doped conductive layer. Figure 9 A schematic diagram of the structure for forming the first battery cell.

[0086] In some embodiments, a method for obtaining a target brightness value includes: before forming the first doped conductive layer 240 and the second doped conductive layer 250 of the first cell 200, forming m first initial doped conductive layers 204, m second initial doped conductive layers 205, m initial spacers 207, and an initial passivation layer 206 located on the surface of the initial spacers 207, where m is a positive integer greater than or equal to 1, and m is less than the number of the first doped conductive layers 240 of the first cell 200; performing initial photoluminescence imaging processing to obtain an initial imaging brightness value corresponding to the initial passivation layer 206 on the surface of the initial spacer 207, where the initial imaging brightness value is a target brightness value; and forming the first doped conductive layer 240, the second doped conductive layer 250, and the spacer 280 on the basis of the first initial doped conductive layer 204, the second initial doped conductive layer 205, and the initial spacer 207.

[0087] In other words, no control cell is provided, but the process of forming the first doped conductive layer 240, the second doped conductive layer 250 and the spacer 280 is divided into multiple steps. In the process of forming the first doped conductive layer 240, the second doped conductive layer 250 and the spacer 280, a small amount of the first initial doped conductive layer 204, the second initial doped conductive layer 205 and the initial spacer 207 are first formed. After the small amount of the first initial doped conductive layer 204, the second initial doped conductive layer 205 and the initial spacer 207 are formed, an initial photoluminescence imaging process is performed. The initial imaging brightness value obtained by the initial photoluminescence imaging process is used as the target brightness value. Then, based on this, the target number of the first doped conductive layer 240, the second doped conductive layer 250 and the spacer 280 are formed.

[0088] For example, a first initial doped conductive layer 204, a second initial doped conductive layer 205 and an initial gap 207 can be formed on the first cell 200, and then the initial imaging brightness value of the initial passivation layer 206 on the surface of the initial gap 207 is measured. Since the gap 280 between the initially formed first initial doped conductive layer 204, the second initial doped conductive layer 205 and the initial gap 207 is small, the initial passivation layer 206 has a better passivation effect on the solar cell and can be used as the target brightness value. Then, the first initial doped conductive layer 204, the second initial doped conductive layer 205 and the initial gap 207 are converted into the first doped conductive layer 240, the second doped conductive layer 250 and the gap 280.

[0089] By controlling the target brightness value and the imaging brightness value to be measured on the same first cell 200 during the formation of the solar cell, the reliability of the analysis results can be improved, and the change in the passivation effect as the number of intervals 280 increases can be observed, thereby facilitating the analysis of the passivation effect of the solar cell.

[0090] In some embodiments, the first initial doped conductive layer 204 and the second initial doped conductive layer 205 are formed to cover a portion of the substrate, and the method for forming the first doped conductive layer 240, the second doped conductive layer 250 and the gap 280 includes: forming a protective layer 208, the protective layer 208 covers the surface of the initial passivation layer 206; forming a third initial doped conductive layer 214, a fourth initial doped conductive layer 215 and a second initial passivation layer 216 on the back side where the first initial doped conductive layer 204 and the second initial doped conductive layer 205 are not formed, the third initial doped conductive layer 214 and the first initial doped conductive layer 204 constitute the first doped conductive layer 240, the second initial doped conductive layer 205 and the fourth initial doped conductive layer 215 constitute the second doped conductive layer 250, and the initial passivation layer 206 and the second initial passivation layer 216 constitute a passivation layer; and removing the protective layer 208.

[0091] In other words, in the process of forming the first initial doped conductive layer 204 and the second initial doped conductive layer 205, the first initial doped conductive layer 204 and the second initial doped conductive layer 205 are formed only on a portion of the top surface of the substrate. The formed first initial doped conductive layer 204 and the second initial doped conductive layer 205 can be directly used as part of the first doped conductive layer 240 and the second doped conductive layer 250, and then the third initial doped conductive layer 214 and the fourth initial doped conductive layer 215 are formed to complete the process of forming the first doped conductive layer 240 and the second doped conductive layer 250.

[0092] For example, a first initial doped conductive layer 204 having the same length, width and thickness as the first doped conductive layer 240 and a second initial doped conductive layer 205 having the same length, width and thickness as the second doped conductive layer 250 can be formed first, and then a third initial doped conductive layer 214 having the same length, width and thickness as the first doped conductive layer 240 is formed according to the target number, and a fourth initial doped conductive layer 215 having the same length, width and thickness as the second doped conductive layer 250 is formed according to the target number to complete the process of forming the first doped conductive layer 240 and the second doped conductive layer 250.

[0093] It should be noted that the substrate 210, front surface 220, back surface 230, passivation layer 260 and tunneling layer 270 in the embodiment of the present disclosure correspond to the substrate 110, front surface 120, back surface 130, passivation layer 160 and tunneling layer 170 in the above embodiment, and will not be repeated here.

[0094] Another embodiment of the present disclosure further provides a method for manufacturing a solar cell. Unlike the above embodiment, the method for forming the first doped conductive layer, the second doped conductive layer, and the interval is different. The method for manufacturing a solar cell provided by another embodiment of the present disclosure will be described below with reference to the accompanying drawings. It should be noted that the parts that are the same or corresponding to the above can refer to the above embodiment and will not be repeated below.

[0095] refer to Figures 10 to 12 , Figures 10 to 12 This is a structural schematic diagram corresponding to each step of a method for manufacturing a solar cell provided by another embodiment of the present disclosure, wherein: Figure 10 This is a schematic diagram of the structure of forming the first initial doped conductive layer and the second initial doped conductive layer. Figure 11 This is an image obtained by performing photoluminescence processing on the first initial doped conductive layer and the second initial doped conductive layer. Figure 12 A schematic diagram of the structure for forming the first battery cell.

[0096] In some embodiments, the formed first initial doped conductive layer 304 and the second initial doped conductive layer 305 cover the entire back side, and the method of forming the first doped conductive layer 340, the second doped conductive layer 350 and the interval 380 includes: removing part of the first initial doped conductive layer 304 and forming a fifth initial doped conductive layer 315; removing part of the second initial doped conductive layer 305 and forming a sixth initial doped conductive layer 316, the remaining first initial doped conductive layer 304 and the sixth initial doped conductive layer 316 constitute the first doped conductive layer 340, and the remaining second initial doped conductive layer 305 and the fifth initial doped conductive layer 315 constitute the second doped conductive layer 350.

[0097] In other words, a first initial doped conductive layer 304 and a second initial doped conductive layer 305 covering the entire back side are first formed. Covering the entire back side here refers to the first initial doped conductive layer 304 and the second initial doped conductive layer 305 as a whole. For example, the first initial doped conductive layer 304 covers 49% of the back side, the second initial doped conductive layer 305 covers 49% of the back side, and the interval 380 covers 2% of the back side. Then, a first initial doped conductive layer 304 is etched into multiple first initial doped conductive layers 304 with a distance of 380 from each other, and a second initial doped conductive layer 305 is etched into multiple second initial doped conductive layers 305 with a distance of 380 from each other, and a fifth initial doped conductive layer 315 is formed at the position where the first initial doped conductive layer 304 is etched, and a sixth initial doped conductive layer 316 is formed at the position where the second initial doped conductive layer 305 is etched, so as to form a first doped conductive layer 340 and a second doped conductive layer 350.

[0098] For example, taking the need to form 6 first doped conductive layers 340 and 6 second doped conductive layers 350 as an example, a first initial doped conductive layer 304 and a second initial doped conductive layer 305 can be formed first, and then the first initial doped conductive layer 304 is etched to divide the first initial doped conductive layer 304 into 3 first initial doped conductive layers 304, and 3 fifth initial doped conductive layers 315 are formed at the position where the first initial doped conductive layer 304 is etched, and the second initial doped conductive layer 305 is etched to divide the second initial doped conductive layer 305 into 3 second initial doped conductive layers 305, and 3 sixth initial doped conductive layers 316 are formed at the position where the second initial doped conductive layer 305 is etched. The 3 first initial doped conductive layers 304 and the 3 sixth initial doped conductive layers 316 constitute 6 first doped conductive layers 340, and the 3 second initial doped conductive layers 305 and the 3 fifth initial doped conductive layers 315 constitute 6 second doped conductive layers 350.

[0099] It can be understood that after forming the first initial doped conductive layer 304 and the second initial doped conductive layer 305 covering the entire back side, an initial passivation layer 306 is also formed, and the imaging brightness value of the initial passivation layer 306 at the corresponding position of the initial interval 307 is obtained, and the brightness value is used as the target brightness value. Then, the first initial doped conductive layer 304 is etched to form the fifth initial doped conductive layer 315, and the second initial doped conductive layer 305 is etched to form the sixth initial doped conductive layer 316. Finally, the passivation layer 360 is formed, and the imaging brightness value of the passivation layer 360 at the corresponding position of the interval 380 is obtained. Finally, the imaging brightness value of the interval 380 is compared with the target brightness value to obtain the analysis result.

[0100] It should be noted that the substrate 310, front surface 320, back surface 330, passivation layer 360 and tunneling layer 370 in the embodiment of the present disclosure correspond to the substrate 110, front surface 120, back surface 130, passivation layer 160 and tunneling layer 170 in the above embodiment, and will not be repeated here.

[0101] An embodiment of the present disclosure further provides a solar cell, which can be formed by the above-mentioned solar cell manufacturing method. It should be noted that the same or corresponding parts as the above can refer to the above-mentioned embodiments and will not be repeated below.

[0102] Solar cells can be IBC (Interdigitated Back Contact), TBC (Tunnel Oxide Passivated Back Contact), HBC (Heterojunction Back Contact), or hybrid BC (Back Contact).

[0103] An embodiment of the present disclosure also provides a photovoltaic module, which may include multiple solar cells formed by the manufacturing method of the solar cell in the above embodiment, or multiple solar cells as in the above embodiment. The photovoltaic module provided by an embodiment of the present disclosure will be described below in conjunction with the accompanying drawings. It should be noted that the parts that are the same or corresponding to the above can refer to the above embodiment and will not be repeated below.

[0104] refer to Figure 13 and Figure 14 ,in, Figure 13 A partial three-dimensional schematic diagram of a photovoltaic assembly provided by an embodiment of the present disclosure is shown. Figure 14 for Figure 13 A schematic partial cross-sectional view along a first cross-sectional direction BB1.

[0105] In some embodiments, a photovoltaic module includes: a cell string, the cell string including: a plurality of solar cells 40 formed by the method for forming the solar cells 40 in some or all of the above embodiments, or including the solar cells as described above; a welding ribbon 43, the welding ribbon 43 being electrically connected to at least two solar cells 40 to connect adjacent solar cells 40 in series.

[0106] The photovoltaic module further includes: a packaging film 41, which is used to cover the surface of the battery string.

[0107] The photovoltaic module further includes a cover plate 42 , which is used to cover the surface of the packaging film 41 away from the cell string.

[0108] In some embodiments, the encapsulation film 41 includes a first encapsulation layer and a second encapsulation layer, wherein the first encapsulation layer covers one of the front or back sides of the solar cell, and the second encapsulation layer covers the other of the front or back sides of the solar cell. Specifically, at least one of the first encapsulation layer or the second encapsulation layer can be an organic encapsulation film such as polyvinyl butyral (PVB) film, ethylene-vinyl acetate copolymer (EVA) film, polyethylene octene co-elastomer (POE) film or polyethylene terephthalate (PET) film, or at least one of the first encapsulation layer or the second encapsulation layer can also be an EP film, EPE film or PVP film. Among them, EP film refers to a co-extruded film composed of stacked EVA film and POE film, EPE film refers to a co-extruded film formed by stacking EVA film + POE film + EVA film in sequence, and PVP film refers to a co-extruded film formed by stacking POE film + EVA film + POE film. Co-extruded films can be prepared by sequentially extruding one or more raw materials onto another already manufactured film during the film processing process, or by bonding different types of already manufactured films together.

[0109] In some cases, there is a boundary line between the first encapsulation layer and the second encapsulation layer before lamination. After the lamination process, the photovoltaic module is formed and there is no longer the concept of the first encapsulation layer and the second encapsulation layer, that is, the first encapsulation layer and the second encapsulation layer have formed an integral encapsulation film 41.

[0110] In some embodiments, the cover plate 42 may be a light-transmitting cover plate such as a glass cover plate or a plastic cover plate. Specifically, the surface of the cover plate 42 facing the encapsulation film 41 may have a concave-convex surface or a velvet surface including multiple raised structures, thereby increasing the utilization of incident light. The cover plate 42 includes a first cover plate and a second cover plate. The first cover plate faces the first encapsulation layer, and the second cover plate faces the second encapsulation layer.

[0111] Those skilled in the art will appreciate that the above-described embodiments are specific examples for implementing the present disclosure, and in actual applications, various changes may be made to them in form and detail without departing from the spirit and scope of the embodiments of the present disclosure. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the embodiments of the present disclosure. Therefore, the scope of protection of the embodiments of the present disclosure shall be based on the scope defined in the claims.

Claims

1. A method for manufacturing a solar cell, characterized in that: include: A first cell is provided, the first cell comprising: a substrate, the substrate comprising a front surface and a back surface opposite to each other, the back surface having a first doped conductive layer and a second doped conductive layer alternately arranged, with a gap between the first doped conductive layer and the second doped conductive layer; a passivation layer, the passivation layer being located on surfaces of the first doped conductive layer, surfaces of the second doped conductive layer, and the gap; Performing photoluminescence imaging on the first cell to obtain an imaging brightness value corresponding to the passivation layer on the interval, and obtaining an analysis result based on a relationship between the imaging brightness value and a target brightness value, wherein the analysis result is used to indicate whether the passivation effect of the first cell is qualified; forming a first electrode and a second electrode on the first battery cell having a qualified passivation effect, wherein the first electrode is electrically connected to the first doped conductive layer, and the second electrode is electrically connected to the second doped conductive layer; The method for obtaining the target brightness value includes: before forming the first doped conductive layer and the second doped conductive layer of the first cell, forming m first initial doped conductive layers, m second initial doped conductive layers, m initial intervals, and an initial passivation layer located on the surface of the initial intervals, where m is a positive integer greater than or equal to 1 and less than the number of the first doped conductive layers of the first cell; performing initial photoluminescence imaging to obtain an initial imaging brightness value corresponding to the initial passivation layer on the surface of the initial interval, where the initial imaging brightness value is the target brightness value; and forming the first doped conductive layer, the second doped conductive layer, and the intervals on the basis of the first initial doped conductive layer, the second initial doped conductive layer, and the initial intervals; The first initial doped conductive layer and the second initial doped conductive layer are formed to cover a portion of the substrate. The method for forming the first doped conductive layer, the second doped conductive layer and the gap includes: forming a protective layer, the protective layer covering the surface of the initial passivation layer; forming a third initial doped conductive layer, a fourth initial doped conductive layer and a second initial passivation layer on the back surface where the first initial doped conductive layer and the second initial doped conductive layer are not formed, the third initial doped conductive layer and the first initial doped conductive layer constitute the first doped conductive layer, the second initial doped conductive layer and the fourth initial doped conductive layer constitute the second doped conductive layer, and the initial passivation layer and the second initial passivation layer constitute the passivation layer; and removing the protective layer; Alternatively, the first initial doped conductive layer and the second initial doped conductive layer are formed to cover the entire back side, and the method of forming the first doped conductive layer, the second doped conductive layer and the gap includes: removing part of the first initial doped conductive layer and forming a fifth initial doped conductive layer; removing part of the second initial doped conductive layer and forming a sixth initial doped conductive layer, the remaining first initial doped conductive layer and the sixth initial doped conductive layer constitute the first doped conductive layer, and the remaining second initial doped conductive layer and the fifth initial doped conductive layer constitute the second doped conductive layer.

2. The method for manufacturing a solar cell according to claim 1, wherein: The obtaining, based on the relationship between the imaging brightness value and the target brightness value, whether the passivation effect of the first cell is qualified includes: Obtaining an average brightness value of the imaging brightness values of n of the intervals, where 1<n≤N, N is the number of intervals of the first battery cell, and both n and N are positive integers; Obtain a difference ratio between the average brightness value and the target brightness value, where the difference ratio is the ratio of the difference between the average brightness value and the target brightness value to the target brightness value. If the difference ratio is less than or equal to a preset ratio, the passivation effect of the first battery cell is qualified; if the difference ratio is greater than the preset ratio, the passivation effect of the first battery cell is unqualified.

3. The method for manufacturing a solar cell according to claim 2, wherein: If the number of the intervals of the first battery sheet is less than 10, the value of n / N is greater than 50%; If the number of the intervals of the first battery cell is greater than 10, and the value of n / N is 10% to 50%, and the larger the value of N is, the smaller the value of n / N is.

4. The method for manufacturing a solar cell according to claim 2, wherein: In the process of acquiring the imaging brightness value, the imaging brightness value of the passivation layer on part of the intervals is acquired, and the intervals for acquiring the imaging brightness value are separated by at least one interval.

5. The method for manufacturing a solar cell according to claim 2, wherein: Obtaining an average brightness value of the imaging brightness values of the n intervals includes: obtaining an average brightness value of the imaging brightness values of the entire passivation layer including the passivation layer on the interval surface and the passivation layer between the passivation layers on the interval surface.

6. The method for manufacturing a solar cell according to any one of claims 1 to 5, characterized in that: After determining whether the passivation effect of the first cell is qualified based on the relationship between the imaging brightness value and the target brightness value, the method further includes: Obtaining differences between imaging brightness values corresponding to the passivation layer at different intervals, and correcting the analysis result based on a relationship between the differences and a preset difference to obtain a correction result; If the difference is less than or equal to the preset difference, the correction result indicates that the passivation effect of the first battery cell is qualified; if the difference is greater than the preset difference, the correction result indicates that the passivation effect of the first battery cell is unqualified.

7. The method for manufacturing a solar cell according to any one of claims 1 to 5, characterized in that: The process parameters of the photoluminescence imaging process include: exposure time 0.1s-0.5s, luminous intensity 0.5cd-1cd, and wavelength 920nm.

8. The method for manufacturing a solar cell according to any one of claims 1 to 5, characterized in that: The process of forming the first doped conductive layer and the second doped conductive layer also includes: controlling the proportion of the first doped conductive layer in the orthographic projection area of the substrate surface to be the same as the proportion of the second doped conductive layer in the orthographic projection area of the substrate surface.

9. A solar cell, characterized in that: The solar cell is a back-contact cell, and is formed by the solar cell manufacturing method according to any one of claims 1 to 8.

10. A photovoltaic module, characterized in that: include: A battery string, the battery string comprising: a plurality of solar cells formed by the method for manufacturing a solar cell according to any one of claims 1 to 8, or a plurality of solar cells according to claim 9; a welding ribbon, the welding ribbon being electrically connected to at least two of the solar cells to connect adjacent solar cells in series; A packaging film, the packaging film is used to cover the surface of the battery string; A cover plate is used to cover the surface of the packaging film away from the battery string.

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