Electronic device

Abstract

The invention provides an electronic device which comprises at least one electrical connection structure. The at least one electrical connection structure includes a first substrate, a first conductive pad, a second substrate, a second conductive pad, a first conductive material, a through hole, and a second conductive material. The first conductive pad is disposed on the first substrate, and the first conductive pad has a top surface and a side surface. The second conductive pad is disposed on the second substrate. The first conductive material is disposed on the second conductive pad. A through hole passes through the first conductive pad and the first substrate. The second conductive material is partially disposed within the through hole and is at least partially in contact with the top surface, the side surface, and the first conductive material of the first conductive pad.

Description

Technical Field

[0001] The present invention relates to an electronic device, and more particularly to an electrical connection structure of an electronic device. Background Art

[0002] Electronic devices such as tablet computers, notebook computers, smart phones, displays, and televisions have become indispensable necessities in modern society. With the application of electronic devices and the habits or needs of users, the requirements for the structure and quality of electronic devices are getting higher and higher, which in turn makes electronic devices face different problems.

[0003] For example, in response to requirements such as higher resolution or display quality, the size of the electrical connection structure in an electronic device needs to be correspondingly miniaturized, which affects the reliability or conduction ability of the electrical connection structure.

[0004] As mentioned above, existing electronic devices still do not meet the requirements in all aspects, and further improving the performance of the electrical connection structure of electronic devices remains one of the topics that the industry is currently committed to researching. Summary of the Invention

[0005] According to some embodiments of the present invention, there is provided an electronic device including at least one electrical connection structure. The at least one electrical connection structure includes a first substrate, a first conductive pad, a second substrate, a second conductive pad, a first conductive material, a via hole, and a second conductive material. The first conductive pad is disposed on the first substrate, and the first conductive pad has a top surface and a side surface. The second conductive pad is disposed on the second substrate. The first conductive material is disposed on the second conductive pad. The via hole penetrates through the first conductive pad and the first substrate. The second conductive material is partially disposed in the via hole and is at least partially in contact with the top surface, the side surface of the first conductive pad, and the first conductive material.

[0006] To make the features or advantages of the present invention more obvious and understandable, some embodiments are specifically described below in conjunction with the accompanying drawings as follows. Description of the Drawings

[0007] Figure 1 Showing a top view structural schematic diagram of an electronic device according to some embodiments of the present invention;

[0008] Figure 2 Showing according to some embodiments of the present invention, Figure 1 A cross-sectional structural schematic diagram of the electronic device along the cut line A-A' in;

[0009] Figure 3 Showing a top view structural schematic diagram of some components of the electrical connection structure of an electronic device according to some embodiments of the present invention;

[0010] Figures 4A to 4FShowing a schematic cross-sectional structure of an electrical connection structure of an electronic device according to some embodiments of the present invention;

[0011] Figures 5A to 5F Showing a schematic cross-sectional structure of an electrical connection structure of an electronic device according to some embodiments of the present invention;

[0012] Figures 6A to 6F Showing a schematic cross-sectional structure of an electrical connection structure of an electronic device according to some embodiments of the present invention;

[0013] Figure 7 Showing a schematic cross-sectional structure of an electronic device according to some embodiments of the present invention.

[0014] Reference numerals:

[0015] 10, 20: Electronic device

[0016] 10E, 10E-1, 10E-2: Electrical connection structure

[0017] 100: First substrate

[0018] 102: Intermediate layer

[0019] 102t: Top surface

[0020] 104: Cover layer

[0021] 110: First conductive pad

[0022] 110s: Side surface

[0023] 110t: Top surface

[0024] 151: First pad

[0025] 152: Second pad

[0026] 191: First test pad

[0027] 192: Second test pad

[0028] 200: Second substrate

[0029] 202: Insulating layer

[0030] 202t: Top surface

[0031] 210: Second conductive pad

[0032] 210s: Side surface

[0033] 210t: Top surface

[0034] 220: First conductive material

[0035] 220s: Side surface

[0036] 220t: Top surface

[0037] 300: Third substrate

[0038] 302: Driving component

[0039] 310: Third conductive pad

[0040] 400, 400B, 400G, 400R: Electronic components

[0041] 401a, 401b: Electrodes

[0042] 402: Main body part

[0043] A - A’, B - B’, C - C’: Cutting lines

[0044] CD: Second conductive material

[0045] CDs: Side surface

[0046] d: First distance

[0047] GP: Gap

[0048] L210, L220: Maximum length

[0049] PX1, PX2: Pixels

[0050] TH1, TH2: Perforations

[0051] THs: Side surface

[0052] W1: First width

[0053] W2: Second width

[0054] Wp: Extension part Detailed implementation manners

[0055] The following provides a detailed description of the electronic device according to the embodiments of the present invention. It should be understood that the following description provides many different embodiments for implementing different aspects of some embodiments of the present invention. The specific components and arrangements described below are only for simply and clearly describing some embodiments of the present invention. Of course, these are only for illustration and not for limiting the present invention. In addition, similar and / or corresponding reference numerals may be used in different embodiments to label similar and / or corresponding components to clearly describe the present invention. However, the use of these similar and / or corresponding reference numerals is only for simply and clearly describing some embodiments of the present invention, and does not represent any association between the different embodiments and / or structures discussed.

[0056] It should be understood that relative terms may be used in the embodiments, such as "lower" or "bottom" or "higher" or "top", to describe the relative relationship of one component of the accompanying drawings to another component. It is understandable that if the device in the accompanying drawings is flipped so that it is upside down, the component described on the "lower" side will become the component on the "higher" side. The embodiments of the present invention can be coordinated with the attached Figure 1 It should be understood that the accompanying drawings of the present invention are also regarded as part of the invention description. It should be understood that the accompanying drawings of the present invention are not drawn to scale. In fact, the dimensions of the components may be arbitrarily enlarged or reduced to clearly show the features of the present invention.

[0057] Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it may include the case where the first material layer is in direct contact with the second material layer or the first material layer and the second material layer may not be in direct contact, that is, there may be one or more other material layers between the first material layer and the second material layer. However, when the first material layer is directly located on the second material layer, it means that the first material layer is in direct contact with the second material layer.

[0058] In addition, it should be understood that the ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify components, and they do not themselves imply or represent that the component (or components) has any previous ordinal number, nor do they represent the order of one component and another component, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish a component with a certain name from another component with the same name. The same terms may not be used in the claims and the specification. For example, the first component in the specification may be the second component in the claim.

[0059] In some embodiments of the present invention, terms related to joining and connecting, such as "connect", "interconnect", etc., unless specifically defined, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, and there are other structures disposed between these two structures. And these terms related to joining and connecting may also include the cases where both structures are movable, or both structures are fixed. In addition, the terms "electrically connected" or "coupled" include any direct and indirect means of electrical connection.

[0060] In the text, the terms "about", "substantially", and "essentially" generally mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The term "ranging from a first numerical value to a second numerical value" means that the range includes the first numerical value, the second numerical value, and other numerical values therebetween. Moreover, there may be a certain error between any two numerical values or directions being compared. If the first numerical value is equal to the second numerical value, it implies that there may be an error of about 10% between the first numerical value and the second numerical value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may range from 80 degrees to 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may range from 0 degrees to 10 degrees.

[0061] According to embodiments of the present invention, a scanning electron microscope (SEM), an optical microscope (OM), an α-step, an ellipsometer, or other suitable means can be used to measure the width, length, thickness, height, volume, or area of each component, the spacing or distance between components. Specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional structure image of the component to be measured, and the width, length, thickness, height, volume, or area of each component, the spacing or distance between components can be measured.

[0062] It should be understood that, without departing from the spirit of the present invention, the features in several different embodiments can be replaced, reorganized, and combined to complete other embodiments. As long as the features between the embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily combined and used.

[0063] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention pertains. It can be understood that these terms, such as those defined in a commonly used dictionary, should be interpreted as having a meaning consistent with the related technology and the background or context of the present invention, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of the present invention.

[0064] In response to requirements such as higher resolution or display quality, the size of the electrical connection structure in an electronic device needs to be correspondingly miniaturized, and the reliability and conduction efficiency of the electrical connection structure are thus challenged.

[0065] According to an embodiment of the present invention, an electronic device including an electrical connection structure is provided. The electrical connection structure has conductive pads and a conductive material with a specific configuration, which can reduce the volume of vias, reduce the demand for the conductive material, or reduce the via depth. Thereby, the conductive material filling and / or via process can have a larger allowable error value, thereby improving the process yield. By the configuration of the front conductive pads and the conductive material, the electrical connection structure can have improved reliability, which is beneficial to realizing the miniaturization of the electrical connection structure. In addition, according to an embodiment of the present invention, the design of the electrical connection structure can dispose electronic components (for example, driving components, etc.) on the back side of the substrate, which can reduce the peripheral utilization rate of the electronic device, and thereby meet technical requirements such as borderless, narrow border, or seamless splicing.

[0066] According to an embodiment of the present invention, the electronic device may include a display device, a splicing device, a touch electronic device, a sensing device, an antenna device, a packaging device, a curved electronic device, or a non-rectangular electronic device, but is not limited thereto. The electronic device may include, for example, liquid crystal, light-emitting diode, fluorescence, phosphor, other suitable display media, or a combination of the foregoing, but is not limited thereto. The display device may be a non-self-luminous display device or a self-luminous display device. The electronic device may include electronic components, which may be passive components or active components, such as capacitors, resistors, inductors, diodes, driving components, transistors, etc. The diode may include a light-emitting diode (LED) or a photodiode. The light-emitting diode may include, for example, an organic light-emitting diode (OLED), a mini light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. The splicing device may be, for example, a display splicing device, but is not limited thereto. The antenna device may be, for example, a liquid crystal antenna or an antenna device of varactor diodes, but is not limited thereto. The packaging device may be used in wafer level packaging (WLP) technology or panel level packaging (PLP) technology, such as chip first or RDL first processes. It should be noted that the electronic device may be any permutation and combination of the foregoing, but is not limited thereto. In addition, the electronic device may be a bendable or flexible electronic device. In addition, the outer shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a driving system, a control system, a light source system, a shelf system... to support the display device or the splicing device.

[0067] Please refer to Figure 1 and Figure 2 , Figure 1 shows a top view structural schematic diagram of the electronic device 10 in some embodiments of the present invention, Figure 2 shows in some embodiments of the present invention, Figure 1Schematic cross-sectional structure diagram of the electronic device 10 along the cutting line A-A'. It should be understood that, for the sake of clear illustration, some components of the electronic device 10 may be omitted in the drawings, and only some components are schematically shown. According to some embodiments, additional features may be added to the electronic device 10 described below. According to other embodiments, some features of the electronic device 10 described below may be replaced or omitted.

[0068] The electronic device 10 includes at least one electrical connection structure 10E. Hereinafter, the electronic device 10 will be described as a display device and the aspect in which the electrical connection structure 10E is applied to the display device, but the present invention is not limited thereto. It should be understood that the electrical connection structure 10E can also be applied to other suitable electronic devices to provide an electrical connection function.

[0069] As Figure 1 and Figure 2 shown, according to some embodiments, the electronic device 10 may include a first substrate 100, a second substrate 200, an electronic component 400, and an electrical connection structure 10E. The second substrate 200 may be disposed opposite to the first substrate 100. The electronic component 400 may be disposed on the first substrate 100, and the electronic component 400 can be electrically connected to another electronic component (not shown, such as a driving component, etc.) on the second substrate 200 through the electrical connection structure 10E. According to some embodiments, the electronic component 400 may include a light-emitting diode, and the electronic device 10 is, for example, a light-emitting diode display device. In this way, the electronic component 400 can be driven by another electronic component (not shown, such as a driving component, etc.) disposed on the back side of the first substrate 100, and the peripheral utilization rate of the electronic device 10 can be reduced, thereby achieving the technical requirements of borderless, narrow border or seamless splicing, and having good display quality.

[0070] According to some embodiments, the first substrate 100 can serve as an active matrix substrate, for example, it can include a substrate (not shown) and a circuit component layer (not shown) disposed on the substrate. The substrate of the first substrate 100 can include a rigid substrate, a flexible substrate, or a combination of the foregoing. According to some embodiments, the material of the substrate of the first substrate 100 can include glass, quartz, sapphire, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), polydimethylsiloxane (PDMS), other suitable substrate materials, or a combination of the foregoing, but is not limited thereto. Furthermore, the circuit component layer can include, for example, at least one or more circuit components (e.g., thin film transistors), a buffer layer, and a stack of multiple insulating layers, but is not limited thereto. According to some embodiments, the circuit component layer is, for example, an active matrix layer composed of multiple thin film transistors, but is not limited thereto.

[0071] Please continue to refer to Figure 1 and Figure 2 , according to some embodiments, one or more electronic components 400 can form pixels, and multiple pixels (e.g., pixel PX1, pixel PX2) can be disposed on the first substrate 100. As described above, the electronic component 400 can be a light emitting diode. In other words, according to some embodiments, each pixel can include multiple light emitting diodes (for convenience of description, Figure 1 labeled as electronic component 400R, electronic component 400G, and electronic component 400B in Figure 1 ), and the number of light emitting diodes is not limited. For example, Figure 1 the two pixels PX1 and PX2 shown in

[0072] According to some embodiments, the plurality of light-emitting diodes may include red light-emitting diodes, green light-emitting diodes, blue light-emitting diodes, white light-emitting diodes, yellow light-emitting diodes, or light-emitting diodes of other colors, which can be adjusted according to design requirements. According to some embodiments, the foregoing electronic components 400R, electronic components 400G, and electronic components 400B may serve as sub-pixels, and the combination of the plurality of pixels PX1 and pixel PX2 can be used to generate an image pattern. According to some embodiments, the number of the plurality of light-emitting diodes in the pixels PX1 and PX2 may be three or more than three, and the colors of the light-emitting diodes may include red light, blue light, green light, white light, yellow light, or light of other suitable colors, but are not limited thereto.

[0073] According to some embodiments, the electronic component 400 may include an electrode 401a, an electrode 401b, and a body portion 402. The body portion 402 may, for example, include a first-type semiconductor layer (such as an N-type doped semiconductor layer), a second-type semiconductor layer (such as a P-type doped semiconductor layer), and a light-emitting layer located between the first-type semiconductor layer and the second-type semiconductor layer. That is to say, the body portion 402 may be a PN junction diode, but is not limited thereto. Furthermore, although the electronic component 400 in the drawings is a flip chip LED, the present invention is not limited thereto. In other embodiments, the electronic component 400 may also include a vertical LED, a surface-mounted LED, or other suitable types of LED packaging structures.

[0074] According to some embodiments, the electronic component 400 may be electrically connected to the circuit component layer of the first substrate 100. Specifically, a plurality of first pads 151 and a plurality of second pads 152 may be provided on the first substrate 100 or the circuit component layer. One of the plurality of light-emitting diodes is disposed corresponding to the first pad 151 and the adjacent second pad 152. For example, the electrode 401a of the electronic component 400R may be electrically connected to the first pad 151, and the electrode 401b may be electrically connected to the second pad 152, but is not limited thereto. In this way, the first pad 151 and the second pad 152 may serve as pads for connecting to the positive electrode or the negative electrode of the electronic component 400 respectively. For example, the electronic component 400 may be electrically connected to the first pad 151 and the second pad 152 by means of wire bonding, flip-chip die bonding, or eutectic die bonding, etc. In addition, according to some other embodiments, the electronic component 400 may also be electrically connected to the circuit components (such as thin film transistors) or the wiring layer in the circuit component layer through an interposer layer including conductive lines and insulating layers, such that the electrode 401a and / or the electrode 402b are electrically connected to the circuit components through the conductive lines respectively, but is not limited thereto.

[0075] According to some embodiments, the electronic device 10 may selectively include a first test pad 191 and a plurality of second test pads 192. The first test pad 191 and the plurality of second test pads 192 may be disposed adjacent to one side of a pixel (e.g., pixel PX1), but not limited thereto. The first test pad 191 and the plurality of second test pads 192 may be electrically connected to the circuit component layer of the first substrate 100, but not limited thereto. The first test pad 191 may be serially connected to a plurality of first pads 151. The plurality of second test pads 192 may be electrically connected to a plurality of second pads 152 respectively. According to some embodiments, the first test pad 191 and the plurality of second test pads 192 may serve as test electrodes for detecting the electrical quality of a plurality of electronic components 400 in the pixel PX1 and the pixel PX2.

[0076] The materials of the first test pad 191, the second test pad 192, the first pad 151, and the second pad 152 may include conductive materials. According to some embodiments, the materials of the first test pad 191, the second test pad 192, the first pad 151, and the second pad 152 may include metal conductive materials such as molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), tin (Sn), silver (Ag), gold (Au), alloys of the foregoing materials, other suitable conductive materials, or combinations of the foregoing, but not limited thereto. According to some embodiments, the materials of the first test pad 191, the second test pad 192, the first pad 151, and the second pad 152 may include transparent conductive materials. The transparent conductive materials may include, for example, transparent conductive oxides (TCOs), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or combinations of the foregoing, but not limited thereto.

[0077] As Figure 2 shown, according to some embodiments, the electronic device 10 may further include a cover layer 104 disposed on the first substrate 100. Further, according to some embodiments, the cover layer 104 may be disposed on the electronic component layer of the first substrate 100. The cover layer 104 may cover the first test pad 191 and the second test pad 192, and may at least partially cover the electronic component 400. According to some embodiments, the cover layer 104 may cover a plurality of electronic components 400 and the electrical connection structure 10E. According to some embodiments, the cover layer 104 may cover the first test pad 191, the second test pad 192, a plurality of electronic components 400, and the electrical connection structure 10E, but is not limited thereto. The cover layer 104 may provide at least one function such as electrical insulation, protection of the covered related components, surface flatness, etc. The cover layer 104 may be formed by a coating process, a jetting process, a dispensing process, a printing process, or other suitable methods, but is not limited thereto. According to some embodiments, the cover layer 104 may include an inorganic material, an organic material, or a combination of the foregoing, but is not limited thereto. According to some embodiments, the inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or a combination of the foregoing, but is not limited thereto. According to some embodiments, the organic material may include, for example, perfluoroalkoxy alkane (PFA), polytetrafluoroethylene (PTFE), fluorinated ethylene propylene (FEP), polyethylene, silicone, acrylic, urethane, or epoxy resin, other suitable materials, or a combination of the foregoing, but is not limited thereto.

[0078] According to some embodiments, the second substrate 200 is disposed below the first substrate 100 and is located on opposite surfaces of the first substrate 100 with respect to the plurality of electronic components 400. The second substrate 200 may serve as a circuit board. According to some embodiments, the second substrate 200 may include a printed circuit board (PCB), a redistribution layer (RDL), or a combination of the foregoing, but is not limited thereto. According to other embodiments, the second substrate 200 may include a chip on film (COF), but is not limited thereto.

[0079] Specifically, according to some embodiments, the second substrate 200 may include a base and a plurality of insulating layers and interconnect layers (eg, a patterned conductive layer) disposed on the base. Figure 2 As shown, according to some embodiments, the electronic device 10 may further include an insulating layer 202, a first conductive material 220, and a second conductive pad 210. The insulating layer 202, the first conductive material 220, and the second conductive pad 210 may also be a part of a multi-layer insulating layer and an interconnect layer of the second substrate 200. The insulating layer 202, the first conductive material 220, and the second conductive pad 210 may be disposed between the second substrate 200 and the first substrate 100. According to other embodiments, the second substrate 200 may be an interposer.

[0080] The base of the second substrate 100 may include a rigid substrate, a flexible substrate, or a combination thereof. According to some embodiments, the material of the base of the second substrate 100 may include glass, quartz, sapphire, polyimide (PI), polycarbonate (PC), polyethyleneterephthalate (PET), polypropylene (PP), polydimethylsiloxane (PDMS), other suitable base materials, or a combination thereof, but is not limited thereto.

[0081] According to some embodiments, the insulating layer 202 may include a polymer insulating material, such as an ABF build-up film (Ajinomoto Build-up Film, ABF), polyphenylene bis(phenylene sulfide), or poly(phenylene sulfide). Polybenzoxazole (PBO), polyimide (PI), photosensitive polyimide (PSPI), benzocyclobutene (BCB), film (PrePreg), photosensitive dielectric material (photoimageabledielectric, PID), resin coated cooper foil (RCC), flame resistant glass fiber (FR4), glass fiber resin composite material, other suitable insulating materials or combinations of the foregoing, but not limited thereto.

[0082] According to some embodiments, the electronic device 10 may further include an intermediate layer 102, and the intermediate layer 102 may be disposed between the first substrate 100 and the second substrate 200. In detail, a portion of the intermediate layer 102 may be disposed between the insulating layer 202 and the first substrate 100, and a portion of the intermediate layer 102 may be disposed between the first conductive material 220 and the first substrate 100. According to some embodiments, the intermediate layer 102 may be an adhesive layer, and the first substrate 100 and the second substrate 200 may be combined, for example, it may be disposed on the second substrate 200 and then combined with the first substrate 100, or it may be disposed on the first substrate 100 and then combined with the second substrate 200. According to some embodiments, the material of the intermediate layer 102 may include an inorganic material, an organic material, or a combination thereof, but is not limited thereto. According to some embodiments, the inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or a combination thereof, but is not limited thereto. According to some embodiments, the organic material may include, for example, perfluoroalkoxy alkane (PFA), polytetrafluoroethylene (PTFE), fluorinated ethylene propylene (FEP), polyethylene, other suitable materials, or a combination thereof, but not limited thereto. In addition, according to some embodiments, the intermediate layer 102 may include an adhesive material having a viscous property, such as optical clear adhesive (OCA), optical clear resin (OCR), pressure sensitive adhesive (PSA), acrylic adhesive, acrylic resin, other suitable materials, or a combination thereof, but not limited thereto. Furthermore, the intermediate layer 102 may have a single-layer or multi-layer structure.

[0083] In addition, the electronic device 10 includes at least one electrical connection structure 10E, and the electrical connection structure 10E can be disposed between the electronic components 400, for example, between two adjacent pixels PX1 and PX2, but is not limited thereto. In other words, according to some embodiments, the electrical connection structure 10E can be disposed in the active area and / or the peripheral area of ​​the electronic device 10. The electrical connection structure 10E can be applied to any suitable electronic device to provide an electrical connection function. The detailed structure of the electrical connection structure 10E will be described below.

[0084] Please refer to Figure 3 as well as Figure 4A , Figure 3 The schematic diagram of the top view of some components of the electrical connection structure 10E of the electronic device according to some embodiments of the present invention is shown. Figure 4AFIG. 0 shows a cross-sectional structure diagram of an electrical connection structure 10E of an electronic device according to some embodiments of the present invention. Specifically, Figure 4A is a cross-sectional structure diagram of the electrical connection structure 10E obtained along the cutting line B-B' of Figure 3 . Furthermore, Figure 3 only the first conductive pad 110 and the via TH1 of the electrical connection structure 10E are shown to facilitate the description of their positional relationship.

[0085] In addition, it should be understood that the same or similar components or components as those in the foregoing will be denoted by the same or similar reference numerals hereinafter, and their materials and functions are the same or similar to those described above, so this part will not be described in detail hereinafter.

[0086] First, as shown in Figure 3 and Figure 4A , the electrical connection structure 10E may include a first substrate 100, a first conductive pad 110, a second substrate 200, a second conductive pad 210, a first conductive material 220, a via TH1, and a second conductive material CD.

[0087] The first conductive pad 110 may be disposed on the first substrate 100, and the first conductive pad 110 has a top surface 110t and a side surface 110s. According to some embodiments, other stacked layers such as a conductive layer, a semiconductor layer, an insulating layer, a protective layer, a planarization layer, an inorganic layer, an organic layer, etc. may be disposed between the first conductive pad 110 and the first substrate 100 or above the first substrate 100, but not limited thereto. According to some embodiments, the first conductive pad 110 may be disposed, for example, on the topmost insulating layer of the circuit component layer (not shown) of the first substrate 100. For example, the first conductive pad 110 may be in contact with the topmost insulating layer of the circuit component layer, but not limited thereto. According to some embodiments, other stacked layers such as a conductive layer, a semiconductor layer, an insulating layer, a protective layer, a planarization layer, an inorganic layer, an organic layer, etc. may be disposed between the second conductive pad 210 and the second substrate 200 or above the second substrate 200, but not limited thereto.

[0088] As shown in Figure 3 , according to some embodiments, the first conductive pad 110 may have a gap GP, and the via TH1 is partially surrounded by the first conductive pad 110. Specifically, the first conductive pad 110 is disposed around the via TH1, but the first conductive pad 110 does not form a continuous and closed loop (such as a circular ring or a square ring, but not limited thereto). According to some embodiments, the second conductive material CD may be at least partially filled into the via TH1, and the first conductive pad 110 is electrically connected to the first conductive material 220 through the via TH1.

[0089] The first conductive pad 110 may comprise a conductive material. According to some embodiments, the material of the first conductive pad 110 may comprise a metallic conductive material, such as molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), tin (Sn), silver (Ag), gold (Au), alloys of the foregoing materials, other suitable conductive materials, or combinations of the foregoing, but not limited thereto. According to some embodiments, the material of the first conductive pad 110 may comprise a transparent conductive material, and the transparent conductive material may, for example, comprise a transparent conductive oxide (TCO), but not limited thereto.

[0090] The second conductive pad 210 may be disposed on the second substrate 200, and the second conductive pad 210 has a top surface 210t. According to some embodiments, the second conductive pad 210 may be part of the inner connection layer of the second substrate 200, but not limited thereto. According to some embodiments, the second conductive pad 210 may be further electrically connected to an electronic component (not shown, such as a driving component) disposed on the second substrate 200.

[0091] Furthermore, the material of the second conductive pad 210 may be the same as or similar to the material of the first conductive pad 110, and thus will not be repeated herein.

[0092] The first conductive material 220 may be disposed on the second conductive pad 210, and the first conductive material 220 has a top surface 220t. According to some embodiments, the first conductive material 220 may be part of the inner connection layer of the second substrate 200, but not limited thereto. According to some embodiments, the first conductive material 220 may be electrically connected to an electronic component (not shown, such as a driving component) disposed on the second substrate 200 through the second conductive pad 210. According to some embodiments, the first conductive material 220 may be in contact with the top surface 210t of the second conductive pad 210.

[0093] According to some embodiments, the material of the first conductive member 220 may include a conductive material. According to some embodiments, the material of the first conductive member 220 may include a metal conductive material such as molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), tin (Sn), silver (Ag), gold (Au), alloys of the foregoing materials, other suitable conductive materials, or combinations of the foregoing, but not limited thereto. According to some embodiments, the material of the first conductive member 220 may include copper, tin, or a combination of the foregoing. According to some embodiments, the material of the first conductive member 220 may include a transparent conductive material, and the transparent conductive material may include, for example, the foregoing transparent conductive oxide (TCO), but not limited thereto. Furthermore, the material of the first conductive member 220 may be the same as or different from the materials of the first conductive pad 110 and the second conductive pad 210.

[0094] Furthermore, as described above, the electrical connection structure 10E may further include an insulating layer 202 and an intermediate layer 102. The insulating layer 202 may be disposed on the second substrate 200, and the intermediate layer 102 may be disposed between the insulating layer 202 and the first substrate 100.

[0095] The via TH1 can pass through the first conductive pad 110 and the first substrate 100. According to some embodiments, the via TH1 can pass through the first conductive pad 110, the first substrate 100, and the intermediate layer 102. Specifically, according to some embodiments, the intermediate layer 102 is at least partially in contact with the first conductive material 220, and the via TH1 passes through the intermediate layer 102 and exposes a part of the first conductive material 220. For example, a part of the top surface 220t of the first conductive material 220 is exposed. The second conductive material CD can be at least partially disposed within the via TH1 and is at least partially in contact with the top surface 110t, the side surface 110s of the first conductive pad 110, and the first conductive material 220. The first conductive pad 110 can be electrically connected to the first conductive material 220 through the via TH1, and thus is electrically connected to the second conductive pad 210. The second conductive material CD can pass through the via TH1, enabling the first conductive pad 110 to be electrically connected to the first conductive material 220 and the second conductive pad 210. According to some embodiments, the second conductive material CD can be in contact with the top surface 110t, the side surface 110s of the first conductive pad 110, and the top surface 220t of the first conductive material 220. According to some embodiments, the second conductive material CD can be in contact with the top surface 110t, the side surface 110s of the first conductive pad 110, the first substrate 100, the intermediate layer 102, and the top surface 220t of the first conductive material 220.

[0096] Furthermore, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and not higher than the top surface 102t of the intermediate layer 102. As Figure 4A shown, according to some embodiments, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and lower than the top surface 102t of the intermediate layer 102. Since the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202, the first conductive material 220 can include a conductive bump, but is not limited thereto.

[0097] Specifically, according to some embodiments of the present invention, the relative height position relationship of the top surface 220t of the aforementioned first conductive material 220, the top surface 202t of the insulating layer 202, and the top surface 102t of the intermediate layer 102 is compared in, for example, the normal direction of the second substrate 200 (e.g., the Z direction in the drawings), and is compared with the highest position among the top surface 220t of the first conductive material 220, the top surface 202t of the insulating layer 202, and the top surface 102t of the intermediate layer 102. For example, if the aforementioned top surface is arc-shaped, curved, or non-flat, the highest position of the top surface is taken for comparison.

[0098] It should be noted that, due to the specific configuration of the foregoing first conductive material 220, the first conductive pad 110 can be electrically connected to the second conductive pad 210 via a through hole TH1 with a relatively small depth, enabling the electrical connection structure 10E to have improved reliability and facilitating the miniaturization of the electrical connection structure. In addition, the foregoing configuration can reduce the volume of the through hole and the demand for the conductive material, allowing a larger tolerance value for the conductive material filling and / or through hole manufacturing process, thereby improving the manufacturing yield. However, in some embodiments, the top surface 220t of the first conductive material 220 may also be equal to or lower than the top surface 202t (not labeled) of the insulating layer 202, which is also beneficial for realizing the miniaturization of the electrical connection structure, can reduce the volume of the through hole, and can reduce the demand for the conductive material, but the effect is less significant compared to the configuration where the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202.

[0099] As Figure 4A shown, according to some embodiments, a portion of the insulating layer 202 may be disposed between the first conductive material 220 and the second conductive pad 210. In other words, the insulating layer 202 may cover a portion of the second conductive pad 210. For example, it may cover the side surface (not labeled) and a portion of the top surface 210t of the second conductive pad 210. In addition, the maximum length L220 of the first conductive material 220 may be less than or equal to the maximum length L210 of the second conductive pad 210. In some embodiments, the maximum length L220 of the first conductive material 220 may be greater than the maximum length L210 of the second conductive pad 210. Furthermore, according to some embodiments, in a cross-sectional view, a portion of the first conductive material 220 (for example, the upper portion of the first conductive material 220) may be located between the top surface 202t of the insulating layer 202 and the top surface 102t of the intermediate layer 102, while another portion of the first conductive material 220 (for example, the lower portion of the first conductive material 220) may be located between the top surface 202t of the insulating layer 202 and the top surface 210t of the second conductive pad 210. According to some embodiments, as Figure 4A shown, the maximum length of the upper portion of the first conductive material 220 may be greater than the maximum length of the lower portion. In some embodiments, the maximum height of the upper portion of the first conductive material 220 may be greater than the maximum height of the lower portion. In some embodiments, the maximum height of the upper portion of the first conductive material 220 may be equal to the maximum height of the lower portion. In some embodiments, the maximum height of the upper portion of the first conductive material 220 may be less than the maximum height of the lower portion.

[0100] According to some embodiments of the present invention, the maximum length L220 of the foregoing first conductive material 220 refers to the maximum length of the first conductive material 220 in a direction perpendicular to the normal direction of the second substrate 200 (for example, the X direction in the drawings); the maximum length L210 of the foregoing second conductive pad 210 refers to the maximum length of the second conductive pad 210 in a direction perpendicular to the normal direction of the second substrate 200 (for example, the X direction in the drawings).

[0101] In addition, as Figure 4A shown, according to some embodiments, the side surface THs of the via TH1 (which can also be regarded as the side surfaces of the first conductive pad 110, the first substrate 100, and the intermediate layer 102 in the via TH1) may not be perpendicular to the top surface 220t of the first conductive material 220. In other words, the side surface THs of the via TH1 may be inclined, for example, outwardly inclined from the bottom to the top (the top width of the via TH1 is greater than the bottom width). According to other embodiments (not shown), the side surface TH of the via TH1 may be substantially perpendicular to the top surface 220t of the first conductive material 220. In addition, according to some embodiments, the side surface THs of the via TH1 may have irregular or rough sidewalls, but are not limited thereto.

[0102] Furthermore, the second conductive material CD can fill a part of the via TH1 or fill the via TH1 completely. For example, according to some embodiments (as Figure 4E shown), during the process of filling the second conductive material CD into the via TH1, there may be a gap between the side surface of the second conductive material CD in the via TH1 and the side surface THs of the via TH1. According to some embodiments (as Figure 4E shown), a part of the side surface of the second conductive material CD may not contact the side surface THs of the via TH1 and / or the side surface (not labeled) of the intermediate layer 102. During the process of disposing the second conductive material CD in the via TH1, the air bubbles generated can be released through the gap between the side surface of the second conductive material CD and the side surface THs of the via TH1. Thereby, the risk of generating bubbles in the second conductive material CD can be reduced, and further, the problems of poor contact or electrical abnormality between the second conductive material CD and the first conductive pad 110, the first conductive material 220, or the second conductive pad 210 can be reduced.

[0103] According to some embodiments, a part of the first substrate 100 and the intermediate layer 102 can be removed by one or more photolithography processes and / or etching processes to form the via TH1. According to some embodiments, the photolithography process may include photoresist coating (for example, spin coating), soft baking, hard baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying, etc., but are not limited thereto. The etching process may include a dry etching process or a wet etching process, but are not limited thereto.

[0104] Furthermore, the second conductive material CD may include a conductive material. According to some embodiments, the material of the second conductive material CD may include silver paste, copper paste, tin paste, conductive solder, other suitable conductive materials, or a combination of the foregoing, but is not limited thereto. According to some embodiments, the second conductive material CD may be disposed in the via TH1 by solder paste printing, micro inkjet printing (MJP) process, chemical vapor deposition (CVD) process, physical vapor deposition process, electroplating process, electroless plating process, other suitable methods, or a combination of the foregoing. In addition, according to some embodiments, the surface of the second conductive material CD may have an arc-shaped profile.

[0105] Next, please refer to Figure 4B , Figure 4B which shows a schematic cross-sectional structure diagram of an electrical connection structure of an electronic device according to some other embodiments of the present invention. Specifically, Figure 4B is a schematic cross-sectional structure diagram of the electrical connection structure obtained along the section line B-B' of Figure 3 .

[0106] It should be understood that the same or similar components or components in the following text as those in the foregoing will be denoted by the same or similar reference numerals, and their materials and functions are the same or similar to those described in the foregoing, so this part will not be described in detail hereinafter.

[0107] Figure 4B The electrical connection structure shown in Figure 4A is substantially similar to Figure 4A . Compared with the embodiment shown in Figure 4A , in this embodiment, the top surface 220t of the first conductive material 220 has an arc-shaped profile. Similarly, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and lower than the top surface 102t of the intermediate layer 102. Furthermore, the insulating layer 202 may cover a part of the second conductive pad 210. For example, it covers the side surface (not labeled) of the second conductive pad 210. In addition, the maximum length L220 of the first conductive material 220 may be less than the maximum length L210 of the second conductive pad 210. Furthermore, in the cross-sectional view, the maximum length of the upper part of the first conductive material 220 may be substantially equal to the maximum length of the lower part.

[0108] Next, please refer to Figure 4C , Figure 4C which shows a schematic cross-sectional structure diagram of an electrical connection structure of an electronic device according to some other embodiments of the present invention. Specifically, Figure 4CThe cross-sectional structural schematic diagram of the electrical connection structure obtained along the Figure 3 section line B-B'.

[0109] Figure 4C The electrical connection structure shown is Figure 4A substantially similar. Compared with the Figure 4A embodiment shown, in this embodiment, the side surface THs of the via TH1 is not perpendicular to the top surface 220t of the first conductive material 220, the side surface THs of the via TH1 is inclined, and the side surface THs is inclined inward from the bottom to the top (that is, the top width of the via TH1 is smaller than the bottom width). Similarly, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and lower than the top surface 102t of the intermediate layer 102. Furthermore, a part of the insulating layer 202 can be disposed between the first conductive material 220 and the second conductive pad 210. In other words, the insulating layer 202 can cover a part of the second conductive pad 210. For example, it covers the side surface (not labeled) and a part of the top surface 210t of the second conductive pad 210. In addition, the maximum length L220 of the first conductive material 220 can be smaller than the maximum length L210 of the second conductive pad 210. Furthermore, in the cross-sectional view, the maximum length of the upper part of the first conductive material 220 can be smaller than the maximum length of the lower part.

[0110] Next, please refer to Figure 4D , Figure 4D which shows the cross-sectional structural schematic diagram of the electrical connection structure of the electronic device in some other embodiments according to the present invention. Specifically, Figure 4D it is the cross-sectional structural schematic diagram of the electrical connection structure obtained along the Figure 3 section line B-B'.

[0111] Figure 4D The electrical connection structure shown is Figure 4A substantially similar. Compared with the Figure 4A embodiment shown, in this embodiment, the second conductive material CD has an extension portion Wp, the extension portion Wp contacts the first conductive material 220, and the extension portion Wp contacts the top surface 220t of the first conductive material 220, for example. Furthermore, the extension portion Wp has a first width W1, and the second conductive material CD has a second width W2 at the junction of the first substrate 100 and the intermediate layer 102, and the first width W1 is greater than the second width W2. According to some embodiments, the first width W1 can be smaller than the maximum length L220 of the first conductive material 220.

[0112] According to some embodiments of the present invention, the first width W1 of the aforementioned extension portion Wp refers to the maximum width of the extension portion Wp of the second conductive material 220 in a direction perpendicular to the normal direction of the second substrate 200 (for example, the X direction in the drawings); the second width W2 of the aforementioned second conductive material 220 refers to the maximum width of the second conductive material CD at the junction of the first substrate 100 and the intermediate layer 102 in a direction perpendicular to the normal direction of the second substrate 200 (for example, the X direction in the drawings).

[0113] It should be noted that the setting of the extension portion Wp can increase the contact area between the second conductive material CD and the first conductive material 220, and can laterally increase the conductive material filling volume of the via TH1, so the impedance can be reduced and the reliability of the electrical connection can be improved.

[0114] In addition, as Figure 4D shown, in this embodiment, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and lower than the top surface 102t of the intermediate layer 102. Furthermore, a part of the insulating layer 202 can be disposed between the first conductive material 220 and the second conductive pad 210. In other words, the insulating layer 202 can cover a part of the second conductive pad 210. For example, it covers the side surface (not labeled) and a part of the top surface 210t of the second conductive pad 210. In addition, the maximum length L220 of the first conductive material 220 can be less than the maximum length L210 of the second conductive pad 210. Furthermore, in the cross-sectional view, the maximum length of the upper part of the first conductive material 220 can be greater than the maximum length of the lower part. According to some embodiments, in the cross-sectional view, the maximum length L220 of the first conductive material 220 can be greater than or equal to the maximum length L210 of the second conductive pad 210. In some embodiments, the maximum height of the upper part of the first conductive material 220 can be greater than the maximum height of the lower part. In some embodiments, the maximum height of the upper part of the first conductive material 220 can be equal to the maximum height of the lower part. In some embodiments, the maximum height of the upper part of the first conductive material 220 can be less than the maximum height of the lower part.

[0115] Next, please refer to Figure 4E , Figure 4E which shows a schematic cross-sectional structure diagram of an electrical connection structure of an electronic device according to some other embodiments of the present invention. Specifically, Figure 4E is a schematic cross-sectional structure diagram of the electrical connection structure obtained along the cut line B-B' of Figure 3 .

[0116] Figure 4E The electrical connection structure shown in Figure 4A is substantially similar to Figure 4ACompared with the embodiments shown, in this embodiment, a second conductive material CD fills a part of the via TH1. Specifically, there is a gap between the side surface CDs of the second conductive material CD in the via TH1 and the side surface THs of the via TH1. A part of the side surface CDs of the second conductive material CD may not contact the side surface THs of the via TH1 and / or the side surface (not labeled) of the intermediate layer 102. During the process of disposing the second conductive material CD in the via TH1, the air bubbles generated can be released through the gap between the side surface of the second conductive material CD and the side surface THs of the via TH1. Thereby, the risk of generating air bubbles in the second conductive material CD can be reduced, and further, the problems of poor contact or electrical abnormality between the second conductive material CD and the first conductive pad 110, the first conductive material 220, or the second conductive pad 210 can be reduced.

[0117] In addition, as Figure 4E shown, in this embodiment, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and lower than the top surface 102t of the intermediate layer 102. Furthermore, a part of the insulating layer 202 can be disposed between the first conductive material 220 and the second conductive pad 210. In other words, the insulating layer 202 can cover a part of the second conductive pad 210. For example, it covers the side surface (not labeled) of the second conductive pad 210 and a part of the top surface 210t. In addition, the maximum length L220 of the first conductive material 220 can be less than the maximum length L210 of the second conductive pad 210. Furthermore, in the cross-sectional view, the maximum length of the upper part of the first conductive material 220 can be greater than the maximum length of the lower part.

[0118] Next, please refer to Figure 4F , Figure 4F which shows a schematic cross-sectional structure diagram of an electrical connection structure of an electronic device according to some other embodiments of the present invention. Specifically, Figure 4F is a schematic cross-sectional structure diagram of the electrical connection structure obtained along the cutting line B - B’ of Figure 3 .

[0119] Figure 4F The electrical connection structure shown is substantially similar to Figure 4A . Compared with the embodiment shown in Figure 4A , in this embodiment, the top surface 220t of the first conductive material 220 is higher than the top surface 202t of the insulating layer 202 and is substantially flush with the top surface 102t of the intermediate layer 102. In other words, the top surface 220t of the first conductive material 220 and the top surface 102t of the intermediate layer 102 can be substantially coplanar. In this embodiment, the intermediate layer 102 does not cover the top surface 220t of the first conductive material 220.

[0120] In addition, as Figure 4FAs shown, in this embodiment, a part of the insulating layer 202 can be disposed between the first conductive material 220 and the second conductive pad 210. In other words, the insulating layer 202 can cover a part of the second conductive pad 210. For example, it covers the side surface (not labeled) of the second conductive pad 210 and a part of the top surface 210t. In addition, the maximum length L220 of the first conductive material 220 can be less than the maximum length L210 of the second conductive pad 210. Furthermore, in the cross-sectional view, the maximum length of the upper part of the first conductive material 220 can be greater than the maximum length of the lower part. In this embodiment, in the cross-sectional view, the maximum height of the upper part of the first conductive material 220 can be greater than the maximum height of the lower part.

[0121] Next, please refer to Figures 5A to 5F , Figures 5A to 5F which shows a schematic cross-sectional structure diagram of an electrical connection structure of an electronic device according to some other embodiments of the present invention. Specifically, Figures 5A to 5F is a schematic cross-sectional structure diagram of the electrical connection structure obtained along the cutting line B-B' of Figure 3 .

[0122] Figures 5A to 5F The electrical connection structures shown are respectively substantially similar to Figures 4A to 4F . Compared with the embodiment shown in Figures 4A to 4F , in these embodiments, the maximum length L210 of the second conductive pad 210 is less than the maximum length L220 of the first conductive material 220. Furthermore, in the cross-sectional view, the maximum length of the upper part of the first conductive material 220 can be greater than the maximum length of the lower part. Also, the maximum length of the upper part of the first conductive material 220 can be greater than the maximum length L210 of the second conductive pad 210.

[0123] Specifically, according to some embodiments, with the configuration that the maximum length L210 of the foregoing second conductive pad 210 is less than the maximum length L220 of the first conductive material 220, that is, the first conductive material 220 has a relatively large size (length, area, volume, etc.). It can reduce the difficulty of arranging other electronic components or routing on the second substrate 200 and improve the process yield. Furthermore, the first conductive material 220 with a relatively large size can also reduce the impedance of the first conductive material 220 (increase the conductivity of the first conductive material 220), which is beneficial to the miniaturization of the electrical connection structure and allows a relatively large tolerance value for the conductive material filling and / or via process.

[0124] Next, please refer to Figures 6A to 6F , Figures 6A to 6F which shows a schematic cross-sectional structure diagram of an electrical connection structure of an electronic device according to some other embodiments of the present invention. Specifically, Figures 6A to 6F is a schematic cross-sectional structure diagram of the electrical connection structure obtained along the cutting line B-B' of Figure 3 .

[0125] Figures 6A to 6F The electrical connection structures shown are respectively Figures 4A to 4F substantially similar. Compared with Figures 4A to 4F the embodiment shown, in these embodiments, the insulating layer 202 does not cover the second conductive pad 210, and there is a first distance d between the insulating layer 202 and the second conductive pad 210, and the first distance d can be greater than or equal to 0. For example, the second conductive pad 210 can be first formed on the second substrate 200 and used as a seed layer, and then the first conductive material 220 is formed thereon. In these embodiments, the maximum length L210 of the second conductive pad 210 is substantially equal to the maximum length L220 of the first conductive material 220. The side surface 210s of the second conductive pad 210 can be substantially flush with the side surface 220s of the first conductive material 220. In other words, the side surface 210s of the second conductive pad 210 and the side surface 220s of the first conductive material 220 can be substantially coplanar.

[0126] In particular, according to some embodiments, by adopting the configuration that the aforementioned insulating layer 202 does not cover the second conductive pad 210, the first conductive material 220 can be completely disposed above the second conductive pad 210. For example, the top surface 210t of the second conductive pad 210 is completely covered. Therefore, the first conductive material 220 and the second conductive pad 210 can have a relatively large contact area, thereby improving the conductive efficiency of the electrical connection structure. According to some embodiments, as Figures 6A to 6F shown, a part of the intermediate layer 102 can be disposed between the insulating layer 202 and the second conductive pad 210. In some embodiments, other film layers can be additionally disposed between the insulating layer 202 and the second conductive pad 210. In some embodiments, a part of the intermediate layer 102 and other film layers can be disposed between the insulating layer 202 and the second conductive pad 210. In some embodiments, the first distance d can be equal to 0 on at least one side, and the at least one side wall of the insulating layer 202 is in direct contact with the at least one side wall of the second conductive pad 210.

[0127] Next, please refer to Figure 7 , Figure 7 which shows a schematic cross-sectional structure diagram of the electronic device 20 in some other embodiments of the present invention. It should be understood that, for the sake of clear illustration, some components of the electronic device 20 may be omitted in the drawings, and only some components are schematically shown. According to some embodiments, additional features can be added to the electronic device 20 described below. According to some other embodiments, some features of the electronic device 20 described below can be replaced or omitted.

[0128] As Figure 7 shown, according to some embodiments, the electronic device 20 includes an electrical connection structure 10E-1 and an electrical connection structure 10E-2. Specifically, the electrical connection structure 10E-1 andFigure 2 The electrical connection structures 10E in the illustrated embodiments are substantially the same. Compared with Figure 2 the illustrated electronic device 10, the electronic device 20 further includes an electrical connection structure 10E-2, and the electrical connection structure 10E-2 can be electrically connected to the electrical connection structure 10E-1. According to some embodiments, in the normal direction of the first substrate 100 (e.g., the Z direction in the drawings), the electrical connection structure 10E-2 and the electrical connection structure 10E-1 at least partially overlap.

[0129] Specifically, according to some embodiments, the electrical connection structure 10E-2 may include a third substrate 300, a third conductive pad 310, and a via TH2. The third conductive pad 310 may be disposed between the third substrate 300 and the second conductive pad 210. The via TH2 may pass through the second substrate 200, and the third conductive pad 310 can be electrically connected to the second conductive pad 210 through the via TH2. Specifically, a conductive material is also disposed in the via TH2, and the third conductive pad 310 can be electrically connected to the second conductive pad 210 through the conductive material disposed in the via TH2.

[0130] The materials of the third substrate 300 and the third conductive pad 310 may be the same as or similar to the materials of the aforementioned second substrate 200 and the second conductive pad 210, and thus will not be repeated here.

[0131] Furthermore, the electronic device 20 may include an electronic component 400 and a driving component 302. The electronic component 400 may be disposed on the first substrate 100, the driving component 302 may be disposed on the third substrate 300, and the driving component 302 can be electrically connected to the electronic component 400 through the electrical connection structure 10E-1 and the electrical connection structure 10E-2. As described above, according to some embodiments, the electronic component 400 may include a light-emitting diode, but is not limited thereto. Furthermore, according to some embodiments, the driving component 302 may include an integrated circuit (IC), a microchip, or other suitable electronic driving components that can provide electrical signals or logic signals, but is not limited thereto. According to some embodiments, the driving component 302 may be disposed on the third substrate 300 in the form of chip on film (COF) or chip on glass (COG), etc., but is not limited thereto.

[0132] The second conductive material CD of the electronic device 20 can be electrically connected to the second conductive pad 210 and the third conductive pad 310 through the vias TH1 and TH2, and then electrically connected to the driving component 302 on the third substrate 300. With the foregoing configuration, the driving signal of the driving component 302 can be provided to the first conductive pad 110 and the plurality of electronic components 400 through the conduction path formed by the second conductive material CD, the second conductive pad 210, and the third conductive pad 310. When the electronic device 20 is applied to the field of display devices, the driving signal of the driving component 302 can be transmitted from one side of the first substrate 100 to the plurality of electronic components 400 on the opposite side through the electrical connection structure 10E-1 and the electrical connection structure 10E-2. Therefore, the driving component 302 can be disposed on the back side of the first substrate 100, which can reduce the peripheral utilization rate of the electronic device 20, and thus meet the technical requirements of borderless, narrow border or seamless splicing, and has good display quality. In some embodiments, in the normal direction of the first substrate 100 (e.g., the Z direction in the drawings), the electrical connection structure 10E-2 and the electrical connection structure 10E-1 may not overlap, and the electrical connection structure 10E-2 and the electrical connection structure 10E-1 may be electrically connected through a wire or other conductor. In some embodiments, at least one of the electrical connection structure 10E-1 and the electrical connection structure 10E-2 includes the first conductive material 220.

[0133] In addition, according to some other embodiments, the foregoing electrical connection structure can also be applied to a splicing device to provide electrical connection between different parts of the splicing device. Moreover, the electrical connection structure can be used to provide conduction between any suitable number of substrates, and the number of the electrical connection structure and the substrates is not limited to those shown in the drawings of this case.

[0134] In summary, according to the embodiments of the present invention, the provided electrical connection structure is conducive to miniaturization of the electrical connection structure, can reduce the volume of the vias, reduce the demand for conductive materials, or reduce the via depth, whereby the conductive material filling and / or via process can have a larger allowable error value, and the reliability and process yield of the electrical connection structure can be improved. In addition, according to the embodiments of the present invention, the design of the electrical connection structure can dispose electronic components (e.g., driving components, etc.) on the back side of the substrate, can reduce the peripheral utilization rate of the electronic device, and thus meet the technical requirements such as borderless, narrow border or seamless splicing.

[0135] Although the embodiments of the present invention and their advantages have been disclosed above, it should be understood that any person with ordinary knowledge in the relevant technical field can make changes, substitutions, and modifications without departing from the spirit and scope of the present invention. As long as the features between the embodiments of the present invention do not violate the spirit of the invention or conflict with each other, they can be arbitrarily combined and used. In addition, the protection scope of the present invention is not limited to the processes, machines, manufactures, compositions of matter, devices, methods, and steps in the specific embodiments described in the specification. Any person with ordinary knowledge in the relevant technical field can understand the processes, machines, manufactures, compositions of matter, devices, methods, and steps developed currently or in the future from the disclosure of the present invention. As long as they can perform substantially the same functions or achieve substantially the same results in the embodiments described herein, they can be used according to the present invention. Therefore, the protection scope of the present invention includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods, and steps. The protection scope of the present invention shall be defined by the scope of the appended claims. Any embodiment or claim of the present invention does not have to achieve all the purposes, advantages, and features disclosed in the present invention.

Claims

1. An electronic device, characterized in that: include: At least one electrical connection structure, wherein the at least one electrical connection structure comprises: a first substrate; A first conducting pad is disposed on the first substrate, wherein the first conducting pad has a top surface and a side surface; a second substrate; a second conducting pad, disposed on the second substrate; A first conductive material is disposed on the second conductive pad; a through hole passing through the first conducting pad and the first substrate; and A second conductive material is partially disposed in the through hole and at least partially contacts the top surface, the side surface of the first conductive pad and the first conductive material.

2. The electronic device according to claim 1, wherein: Also includes: an insulating layer, disposed on the second substrate; as well as An intermediate layer is disposed between the insulating layer and the first substrate.

3. The electronic device according to claim 2, wherein: A top surface of the first conductive material is higher than a top surface of the insulating layer and is not higher than a top surface of the middle layer.

4. The electronic device as claimed in claim 3, characterized in that: The top surface of the first conductive material has an arc-shaped profile.

5. The electronic device as claimed in claim 2, characterized in that: The middle layer is at least partially in contact with the first conductive material, and the through hole passes through the middle layer and exposes a portion of the first conductive material.

6. The electronic device as claimed in claim 2, characterized in that: A portion of the insulating layer is disposed between the first conductive material and the second conductive pad.

7. The electronic device as claimed in claim 1, characterized in that: Also includes: An insulating layer is disposed on the second substrate, wherein the insulating layer 202 and the second conducting pad 210 are separated by a first distance, and the first distance may be greater than or equal to zero.

8. The electronic device as claimed in claim 1, wherein: A maximum length of the second conducting pad is less than or equal to a maximum length of the first conducting material.

9. The electronic device as claimed in claim 1, wherein: A maximum length of the first conductive material is less than or equal to a maximum length of the second conductive pad.

10. The electronic device as claimed in claim 2, characterized in that: The second conductive material has an extension portion, the extension portion contacts the first conductive material, the extension portion has a first width, the second conductive material has a second width at the junction of the first substrate and the middle layer, and the first width is greater than the second width.

11. The electronic device according to claim 10, wherein: The first width is smaller than a maximum length of the first conductive material.

Images