Micro-grid gas detection device

Abstract

The invention relates to the technical field of microstructure gas detectors, and provides a micro-grid gas detection device, the micro-grid gas detection device comprises a silk screen, a readout anode and a support structure, the readout anode is arranged on a first side of the silk screen along a first direction; a supporting structure is arranged between the silk screen and the reading anode and comprises a plurality of annular frames, at least one reinforcing body and a plurality of supporting columns, the annular frames are sequentially arranged in a sleeved mode, every two adjacent annular frames are connected through the corresponding reinforcing body, the annular frame located on the innermost side is defined as an annular inner frame, and the supporting columns are located in the annular inner frame. The supporting column, the annular frame and the reinforcing body are all connected with the silk screen. The supporting columns, the annular frames and the reinforcing bodies can provide supporting force for the silk screen, the annular frames can provide support for the position, away from the supporting columns, of the silk screen, the supporting force is more uniform, and the vibration interference resistance of the micro-grid gas detection device is improved.

Description

Technical Field

[0001] This application relates to the technical field of micro-structured gas detectors, and particularly to a micro-mesh gas detection device. Background Art

[0002] This section aims to provide background or context for the implementation of this application. The description herein is not admitted to be prior art merely because it is included in this section.

[0003] The micro-mesh gas detector belongs to a type of micro-structured gas detector. The micro-mesh gas detector includes a wire mesh and a readout anode. A cathode is added on the side of the wire mesh away from the readout anode. The space between the cathode and the wire mesh forms a drift region, and the space between the wire mesh and the readout anode forms an avalanche region. Particles interact with the working medium in the drift region to generate electrons and ions. The electrons in the drift region pass through the wire mesh under the action of an electric field and cause charge amplification in the avalanche region, generating more electrons and ions. The corresponding induced signal is led out by the readout anode.

[0004] In related technologies, with the increase in the manufacturing area of the micro-mesh gas detector, for example, when the diameter of the effective area reaches more than 4 cm (centimeters), in the case where the wire mesh lacks support, on the one hand, under the action of an electric field, the wire mesh and the readout anode are likely to come into contact and cause damage. On the other hand, the more vibration modes that can be accommodated on the surface of the wire mesh. When the tension of the wire mesh decreases, the vibration frequency of the wire mesh itself shifts towards the low frequency. In this way, the micro-mesh gas detector has poor anti-vibration interference ability. When there is sound and machine vibration in the environment, the wire mesh is more likely to generate forced vibration. The vibration causes the distance between the wire mesh and the readout anode to change, resulting in a change in the equivalent capacitance, and further affecting the amplitude of the induced signal obtained by the micro-mesh gas detector to change. Eventually, the energy resolution of the micro-mesh gas detector becomes poor, the energy spectrum broadens, etc., resulting in a deterioration of the performance of the micro-mesh gas detector. Summary of the Invention

[0005] In view of this, the embodiments of this application are expected to provide a micro-mesh gas detection device that can improve the anti-vibration interference ability of the micro-mesh gas detection device.

[0006] The embodiments of this application provide a micro-mesh gas detection device, including:

[0007] A wire mesh;

[0008] A readout anode, disposed on a first side of the wire mesh along a first direction;

[0009] A support structure is provided between the wire mesh and the readout anode. The support structure includes a plurality of annular frames, at least one reinforcing member, and a plurality of support columns. The plurality of annular frames are sleeved in sequence. The reinforcing member connects two adjacent annular frames. The innermost annular frame is defined as the inner annular frame. The plurality of support columns are located within the inner annular frame. The support columns, the annular frames, and the reinforcing member are all connected to the wire mesh.

[0010] In some embodiments, the support structure is provided on the second side of the wire mesh along the first direction.

[0011] In some embodiments, with a plane perpendicular to the first direction as the projection plane, the projections of the two support structures coincide.

[0012] In some embodiments, the micro-grid gas detection device includes a reinforcing member. The support structure located on the second side of the wire mesh is defined as the first support structure. The reinforcing member is provided on the side of the first support structure away from the wire mesh.

[0013] In some embodiments, the reinforcing member has an annular structure enclosing an avoidance opening. With a plane perpendicular to the first direction as the projection plane, the projection of the effective area of the readout anode is within the projection range of the avoidance opening.

[0014] In some embodiments, with a plane perpendicular to the first direction as the projection plane, the inner edge line of the projection of the reinforcing member does not extend beyond the inner edge line of the projection of the inner annular frame of the first support structure.

[0015] In some embodiments, with a plane perpendicular to the first direction as the projection plane, the projections of the reinforcing members and the annular frames of the first support structure are both within the projection range of the reinforcing member.

[0016] In some embodiments, the reinforcing member is made of ceramic, stainless steel, and / or glass.

[0017] In some embodiments, the plurality of annular frames and the plurality of support columns are all formed by photolithography; and / or,

[0018] The reinforcing member is formed by the solidification of a colloid.

[0019] In some embodiments, the reinforcing member fills the gap between two adjacent annular frames.

[0020] The micro-grid gas detection device provided by the embodiment of the present application has multiple support columns located within the annular inner frame. The support columns are connected to the wire mesh. The support columns can not only support the wire mesh but also hold the wire mesh, thereby suppressing the vibration of the wire mesh in the axial direction. The reinforcing body connects two adjacent annular frames, and the reinforcing body connects multiple annular frames into a whole, strengthening the overall structural strength, so that the reinforcing body and multiple annular frames can effectively support the wire mesh. The support columns, annular frames, and reinforcing bodies can all provide support forces for the wire mesh. Multiple annular frames can provide support for the positions of the wire mesh far from the support columns. Moreover, the annular frame has a closed-loop structure, which can provide support forces for various parts of the wire mesh along the radial direction, so as to provide and maintain a greater wire mesh tension, with a more uniform support force, improving the anti-vibration interference ability of the micro-grid gas detection device, weakening the interference caused by external vibration noise, and the greater wire mesh tension and denser arrangement of support columns make the distance uniformity between each position of the wire mesh and the readout anode better, improving the pressure-bearing upper limit and gain uniformity of the micro-grid gas detection device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic structural diagram of the micro-grid gas detection device in some embodiments of the present application;

[0022] Figure 2 is Figure 1 an exploded view of the micro-grid gas detection device shown;

[0023] Figure 3 is Figure 1 a schematic diagram of another perspective of the micro-grid gas detection device shown;

[0024] Figure 4 is Figure 3 a cross-sectional schematic diagram in the A-A direction in

[0025] Figure 5 is Figure 1 a schematic diagram of a part of the structure in , where the wire mesh is not shown;

[0026] Figure 6 is Figure 5 a schematic diagram of another perspective of the structure shown.

[0027] DESCRIPTION OF THE REFERENCE NUMERALS

[0028] 1. Wire mesh; 2. Readout anode; 21. Effective area; 3. Support structure; 301. First support structure; 302. Second support structure; 31. Annular frame; 311. Annular inner frame; 311a. Inner edge line of the projection of the annular inner frame 311; 312. Annular outer frame; 32. Reinforcing body; 33. Support column; 4. Reinforcing member; 4a. Avoidance opening; 4b. Inner edge line of the projection of the reinforcing member 4. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0029] The following further describes in detail the embodiments of the present application in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application, but cannot be used to limit the scope of the present application.

[0030] In the various specific technical features and each embodiment described in the specific implementation manner, without contradiction, they can be combined in any suitable manner. For example, different embodiments can be formed by combining different specific technical features / embodiments. To avoid unnecessary repetition, various possible combination methods of each specific technical feature / embodiment in the present application will not be described separately. In addition, terms such as "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. The present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] It should be noted that "a plurality" in the embodiments of the present application includes two and more than two. The first side and the second side are two sides opposite to the first direction. When the micro-grid gas detection device is working properly, the first side can be the lower side and the second side can be the upper side. Among them, "lower" is the direction towards the ground, and "upper" is the direction opposite to "lower".

[0032] In the related art, support columns are added between the wire mesh and the readout anode to provide support for the wire mesh through the support columns. However, the support columns will affect parameters such as the pressure-bearing upper limit (i.e., the upper limit of the working voltage) and the dead zone ratio of the micro-grid gas detector. Among them, a larger wire mesh tension helps to improve the pressure-bearing capacity of the micro-grid gas detector, and reducing the density of the support columns can reduce the size of the dead zone. In order for the micro-grid gas detector to be used normally, currently, the wire mesh tension is increased as much as possible, and at the same time, the corresponding arrangement of the support columns is optimized to reduce the dead zone ratio. However, increasing the wire mesh tension requires improving the strength of the circuit board itself and the support columns. Otherwise, it is easy to cause the failure of the support columns and the deformation of the circuit board, thereby affecting the thickness uniformity of the avalanche region. If the equivalent diameter or arrangement density of the support columns is increased to improve the strength of the support columns, it is easy to increase the dead zone. If the equivalent diameter or arrangement density of the support columns is unilaterally reduced, although the dead zone can be reduced, it is easy to cause insufficient support force or tensile force of the support columns, resulting in local deformation of the wire mesh, and the uniformity of the distance between the wire mesh and the readout anode is poor. Therefore, due to the strength limitations of the support columns, the readout anode, etc. in the related art, the wire mesh tension cannot be raised too high. The wire mesh tension is usually maintained at about 1 kg / cm, and it is difficult to maintain a high wire mesh tension while having good support strength.

[0033] The applicant has found that when the micro-mesh gas detector is operating normally, the voltage difference between the wire mesh and the readout anode causes the two to attract each other. Through a simplified model of the second-order two-dimensional differential equation of the deformation of the wire mesh surface, the following conclusion can be obtained: the farther a point on the wire mesh is from the support column, the closer the distance between the wire mesh at that point and the readout anode. The shortest distance between the wire mesh and the readout anode determines the upper pressure limit of the micro-mesh gas detector, and the uniformity of the distances between different positions on the wire mesh and the readout anode determines the gain uniformity of the micro-mesh gas detector.

[0034] In view of this, please refer to Figure 1 and Figure 2 , an embodiment of the present application provides a micro-mesh gas detection device, including a wire mesh 1, a readout anode 2, and a support structure 3.

[0035] Please continue to refer to Figure 1 and Figure 2 , the readout anode 2 is disposed on the first side of the wire mesh 1 along the first direction. A support structure 3 is disposed between the wire mesh 1 and the readout anode 2.

[0036] Please refer to Figures 1 to 6 , the support structure 3 includes a plurality of annular frames 31, at least one reinforcing body 32, and a plurality of support columns 33. The plurality of annular frames 31 are sleeved in sequence. The reinforcing body 32 connects two adjacent annular frames 31. The innermost annular frame 31 is defined as an inner annular frame 311. The plurality of support columns 33 are located inside the inner annular frame 311. The support columns 33, the annular frames 31, and the reinforcing body 32 are all connected to the wire mesh 1.

[0037] The micro-mesh gas detection device can also be called a Micro Mesh Gaseous Structure, which can be abbreviated as MicroMegas.

[0038] The wire mesh 1, as a grid electrode, can be made of a conductive material, for example, stainless steel or other metal materials. The wire mesh 1 has holes for charged particles such as electrons to pass through. The size of the holes can be in the micrometer range.

[0039] Exemplarily, the wire mesh 1 can be in a grid-like structure with holes.

[0040] A support structure 3 is disposed between the wire mesh 1 and the readout anode 2, that is to say, the first side of the wire mesh 1 along the first direction has a support structure 3.

[0041] Please refer to Figure 2 , the annular frame 31 is in a hollow closed-ring structure.

[0042] The number of the annular frames 31 includes two or more.

[0043] Please refer to Figure 2, a plurality of annular frames 31 are sleeved in sequence. Specifically, the plurality of annular frames 31 are sleeved at intervals in the radial direction, and there is a gap between any two adjacent annular frames 31.

[0044] Please refer to Figure 4 , a reinforcing body 32 is connected to two adjacent annular frames 31. Specifically, a reinforcing body 32 is arranged between any two adjacent annular frames 31.

[0045] The number of support columns 33 includes two or more than two.

[0046] A plurality of support columns 33 are located inside the annular inner frame 311. That is to say, the annular inner frame 311 surrounds the plurality of support columns 33.

[0047] In some embodiments, all the support columns 33 are located inside the annular inner frame 311. That is to say, the annular inner frame 311 can surround all the support columns 33.

[0048] In some embodiments, some of the support columns 33 are located inside the annular inner frame 311, and some of the support columns 33 are located outside the annular inner frame 311. That is to say, the annular inner frame 311 can surround some of the support columns 33.

[0049] There is a gap between the wire mesh 1 and the readout anode 2. Exemplarily, the gap between the wire mesh 1 and the readout anode 2 is about dozens of micrometers to hundreds of micrometers. For example, the gap between the wire mesh 1 and the readout anode 2 is 100 μm.

[0050] The annular frame 31, the reinforcing body 32 and the support column 33 can all be connected to the wire mesh 1 by bonding or other means.

[0051] The working principle of the micro-mesh gas detection device is briefly described as follows:

[0052] The cathode can be arranged on the second side of the wire mesh 1 along the first direction. There is a gap between the cathode and the wire mesh 1, and the distance between the cathode and the wire mesh 1 is approximately several millimeters to more than ten millimeters. A drift region is formed between the cathode and the wire mesh 1, and an avalanche region is formed between the wire mesh 1 and the readout anode 2. When particles enter the drift region, due to the relatively lower electric field in the drift region compared to the avalanche region, the ionized electrons generated in the drift region drift to the avalanche region to generate avalanche amplification. The avalanche region is a strong electric field region. Positive ions move to the wire mesh 1, and electrons move to the effective region 21 of the readout anode 2 and an induced signal is generated on the readout anode 2 (Note: The induced signal is generated during the movement of moving charges). The micro-mesh gas detection device provided by the embodiments of the present application has the characteristics of radiation resistance and stable performance, and can meet the requirements of position resolution of dozens of micrometers and time resolution of several nanoseconds.

[0053] Exemplarily, taking the plane perpendicular to the first direction as the projection plane, the projection of the annular inner frame 311 surrounds the outer periphery of the projection of the active area 21. For example, the inner diameter of the projection of the annular inner frame 311 is greater than the diameter of the projection of the active area 21.

[0054] In the micro-grid gas detection device provided by the embodiment of the present application, a plurality of support columns 33 are located inside the annular inner frame 311. The support columns 33 are connected to the wire mesh 1. The support columns 33 can not only support the wire mesh 1, but also hold the wire mesh 1, thereby suppressing the vibration of the wire mesh 1 in the axial direction. The reinforcing body 32 is connected to two adjacent annular frames 31. The reinforcing body 32 connects the plurality of annular frames 31 into a whole, strengthening the overall structural strength, so that the reinforcing body 32 and the plurality of annular frames 31 can effectively support the wire mesh 1. The support columns 33, the annular frames 31 and the reinforcing body 32 can all provide support force for the wire mesh 1. The plurality of annular frames 31 can provide support for the position of the wire mesh 1 away from the support columns 33. Moreover, the annular frame 31 has a closed-loop structure and can provide support force for each part of the wire mesh 1 in the radial direction to provide and maintain a greater wire mesh tension, the support strength is more uniform, improving the anti-vibration interference ability of the micro-grid gas detection device, weakening the interference caused by external vibration noise. The greater wire mesh tension and the denser arrangement of the support columns 33 make the distance uniformity between each position of the wire mesh 1 and the readout anode 2 better, improving the pressure-bearing upper limit and gain uniformity of the micro-grid gas detection device.

[0055] The readout anode 2 can be a printed circuit board (Printed Circuit Board, abbreviated as PCB). The readout anode 2 has an active area 21, and the active area 21 is used to receive electrons to form an induction signal.

[0056] The wire mesh 1 can be made of a conductive material with high transmittance. The wire mesh 1 can be made of a metal material, for example, stainless steel material.

[0057] The wire mesh 1 is tensioned to increase the tension, so that the probability of the wire mesh 1 bending under the action of the electric field force can be reduced. As an example, the tension of the wire mesh 1 provided by the embodiment of the present application is not less than 2 kg / cm (kilograms per centimeter).

[0058] It can be understood that the support structure 3 has an insulating function. For example, the support structure 3 can be made of an insulating material.

[0059] In some embodiments, please refer to Figures 2 to 4 , a single support structure 3 includes two annular frames 31. The annular frame 31 located on the outermost side can be defined as the annular outer frame 312. The annular outer frame 312 and the annular inner frame 311 are sleeved, and the reinforcing body 32 connects the annular inner frame 311 and the annular outer frame 312. In this way, under the condition that the support structure 3 has strong structural strength, the structure is simple and can meet the manufacturing requirements.

[0060] In some embodiments, a single support structure 3 includes three annular frames 31. The annular frame 31 located in the middle is defined as the middle annular frame, and the middle annular frame is located between the inner annular frame 311 and the outer annular frame 312. One reinforcing body 32 connects the inner annular frame 311 and the middle annular frame, and another reinforcing body 32 connects the outer annular frame 312 and the middle annular frame.

[0061] It can be understood that, in addition to the above two examples, the annular frame 31 can also be four, five, etc.

[0062] The shapes of the respective annular frames 31 can be the same or different. The shape of the annular frame 31 can be designed according to the readout anode 2. The annular frame 31 can be a circular ring (please refer to Figure 2 ), an oval ring, or a polygonal ring, etc.

[0063] It should be noted that, in some embodiments, a single reinforcing body 32 can be an integral structure that extends continuously in the circumferential direction. For example, a single reinforcing body 32 is an annular structure (please refer to Figure 2 ), or an arc-shaped structure. In some embodiments, a single reinforcing body 32 is a plurality of split structures arranged at intervals in the circumferential direction. For example, a single reinforcing body 32 is a plurality of arc-shaped structures arranged at intervals in the circumferential direction.

[0064] In some embodiments, please refer to Figures 2 to 4 , a support structure 3 is provided on the second side of the wire mesh 1 along the first direction. That is to say, a support structure 3 is provided on the side of the wire mesh 1 away from the readout anode 2.

[0065] In this embodiment, support structures 3 are provided on both sides of the wire mesh 1 along the first direction. Both support structures 3 are connected to the wire mesh 1, and the two support structures 3 can jointly provide support and clamp the wire mesh 1 to maintain the tension of the wire mesh 1, which can better avoid the wire mesh 1 from deforming under the action of the electrostatic force of the electric field and can also reduce the force exerted on a single support structure 3 by the wire mesh 1, improving reliability.

[0066] In some embodiments, the micro-mesh gas detection device includes a bracket, and the bracket connects the cathode and the readout anode 2. At least one support structure 3 is connected to the outermost annular frame 31 and the bracket. That is to say, the outer annular frame 312 of at least one support structure 3 is connected to the bracket.

[0067] As an example, the outer annular frame 312 of at least one support structure 3 is bonded to the bracket.

[0068] It can be that the outer annular frame 312 of one support structure 3 is connected to the bracket, or it can be that the outer annular frames 312 of two support structures 3 are connected to the bracket.

[0069] In this embodiment, the bracket can provide support for the cathode to maintain the spacing between the cathode and the wire mesh 1. The outermost annular frame 31 is connected to the bracket, and the bracket can provide a supporting force for the support structure 3, further reducing the risk of deformation of the support structure 3.

[0070] In some embodiments, refer to Figures 2 to 6 , with the plane perpendicular to the first direction as the projection plane, the projections of the two support structures 3 coincide. With such a design, not only can the manufacturing process of the support structure 3 be simplified, but also the support structure 3 can block fewer charged particles, reducing the dead zone.

[0071] In some embodiments, refer to Figures 1 to 6 , the micro-mesh gas detection device includes a reinforcing member 4. The support structure 3 located on the second side of the wire mesh 1 is defined as the first support structure 301, and the reinforcing member 4 is disposed on the side of the first support structure 301 away from the wire mesh 1. Specifically, the reinforcing member 4 is connected to the first support structure 301.

[0072] Exemplarily, all the annular frames 31 of the first support structure 301 can be connected to the reinforcing member 4. For example, the inner annular frame 311 and the outer annular frame 312 of the first support structure 301 are both connected to the reinforcing member 4.

[0073] In this embodiment, the reinforcing member 4 is used to further strengthen the strength of the first support structure 301. The tension of the wire mesh 1 can be transmitted to the reinforcing member 4 through the first support structure 301. The reinforcing member 4 and the readout anode 2 etc. jointly bear the tension of the wire mesh 1. The tension of the wire mesh 1 can be relatively large, improving the anti-vibration interference ability, and the reinforcing member 4 can share the tension, to a certain extent avoiding the risk of the readout anode 2 bending under the action of the tension of the wire mesh 1.

[0074] It can be understood that the cathode is spaced from the first support structure 301 and the cathode does not contact the first support structure 301.

[0075] In some embodiments, refer to Figures 2 to 6 , the support structure 3 located on the first side of the wire mesh 1 is defined as the second support structure 302. The annular frame 31, the solidifying member 32 and the support column 33 of the second support structure 302 can all be connected to the readout anode 2.

[0076] Exemplarily, the annular frame 31, the solidifying member 32 and the support column 33 of the second support structure 302 can all be bonded to the readout anode 2.

[0077] In this embodiment, forces such as the tension from the wire mesh 1 and the electrostatic force of the electric field can all be transmitted to the readout anode 2 through the second support structure 302, and the second support structure 302 and the readout anode 2 jointly share the above-mentioned forces.

[0078] The thickness of the readout anode 2 in the first direction is not limited. Exemplarily, the thickness of the readout anode 2 in the first direction can be about 3 mm.

[0079] In some embodiments, referring to Figures 1 to 6 , the reinforcing member 4 has an annular structure surrounding the avoidance opening 4a. Taking the plane perpendicular to the first direction as the projection plane, the projection of the effective area 21 of the readout anode 2 is within the projection range of the avoidance opening 4a. That is to say, the projection of the reinforcing member 4 surrounds the projection of the effective area 21.

[0080] In this embodiment, the projection of the effective area 21 is within the projection range of the avoidance opening 4a. That is to say, the projection of the reinforcing member 4 surrounds the outer periphery of the projection of the effective area 21. The reinforcing member 4 can effectively avoid the effective area 21 and prevent the reinforcing member 4 from blocking charged particles.

[0081] In some embodiments, referring to Figures 4 to 6 , taking the plane perpendicular to the first direction as the projection plane, the inner edge line 4b of the projection of the reinforcing member 4 does not extend beyond the inner edge line 311a of the annular inner frame 311 of the first support structure 301.

[0082] The inner edge line 4b of the projection of the reinforcing member 4 refers to the inner edge line along the radial direction of the projection of the reinforcing member 4.

[0083] The inner edge line 311a of the projection of the annular inner frame 311 of the first support structure 301 refers to the inner edge line along the radial direction of the projection of the annular inner frame 311 in the projection of the first support structure 301.

[0084] The inner edge line 4b of the projection of the reinforcing member 4 does not extend beyond the inner edge line 311a of the projection of the annular inner frame 311 of the first support structure 301 means that: the inner edge line 4b of the projection of the reinforcing member 4 coincides with the inner edge line 311a of the projection of the annular inner frame 311 (refer to Figure 4 ), or the inner edge line 4b of the projection of the reinforcing member 4 is located outside the inner edge line 311a of the projection of the annular inner frame 311.

[0085] In some embodiments, the inner edge line 4b of the projection of the reinforcing member 4 does not extend beyond the inner edge lines 311a of all the projections of the annular inner frames 311.

[0086] In this embodiment, the inner edge line 4b of the projection of the reinforcing member 4 does not extend beyond the inner edge line 311a of the projection of the annular inner frame 311 of the first support structure 301. The reinforcing member 4 can be connected to the annular inner frame 311 to enhance the strength of the first support structure 301, and can also avoid the reinforcing member 4 protruding radially inward beyond the first support structure 301 to cause a dead zone as much as possible.

[0087] It should be noted that in some embodiments, the inner ring of the reinforcing member 4 can be slightly larger or slightly smaller than the annular inner frame 311, and there is no strict limitation. During actual manufacturing, the reinforcing member 4 may be placed crookedly due to alignment problems, which is still effective.

[0088] In some embodiments, please refer to Figures 3 to 6 , with the plane perpendicular to the first direction as the projection plane, the projections of the reinforcing body 32 and the annular frame 31 of the first support structure 301 are both within the projection range of the reinforcing member 4.

[0089] In some embodiments, with the plane perpendicular to the first direction as the projection plane, the projections of the reinforcing body 32 and the annular frame 31 of the first support structure 301 coincide with the projection of the reinforcing member 4.

[0090] In this embodiment, the projections of the reinforcing body 32 and the annular frame 31 of the first support structure 301 are both within the projection range of the reinforcing member 4. The radial ring width of the reinforcing member 4 is relatively large, and the reinforcing member 4 can be connected to the reinforcing body 32 and the annular frame 31.

[0091] In some embodiments, the reinforcing member 4 is made of ceramic, stainless steel, and / or glass. That is to say, the reinforcing member 4 can be made of one of ceramic, stainless steel, and glass, or the reinforcing member 4 can be made of two of ceramic, stainless steel, and glass, or the reinforcing member 4 can be made of all three of ceramic, stainless steel, and glass.

[0092] Preferably, the reinforcing member 4 is made of at least one of ceramic and glass. Ceramic and glass have insulation properties and better safety.

[0093] In this embodiment, ceramic, stainless steel, and glass have good strength and stiffness, can play a good strengthening role, and can bear large acting forces without obvious deformation.

[0094] It should be noted that: all physical substances will deform under tension, but whether this deformation is within the allowable range. Therefore, the selected materials are all materials with insignificant deformation, that is, any material with this property can be used.

[0095] In the related art, the hot glue film process is used to manufacture the micro-grid gas detector. The hot glue film process refers to using a hot glue film to manufacture the support columns. The hot glue film process has the problem of low manufacturing efficiency. For example, the support columns used in the hot glue film process are basically placed manually, and the placement accuracy and difficulty are positively correlated with the effective area of the micro-grid gas detector. Therefore, the distance between each support column is usually greater than 8 mm (millimeters) during manufacturing. If the support columns are arranged in a square pattern, the distance between each support column is 5 mm, and the effective area is 20 cm * 20 cm (centimeters), then at least 1521 = (20 * 2 - 1) 2The number of support columns will greatly increase the workload of placing the support columns.

[0096] In some embodiments, the plurality of annular frames 31 and the plurality of supporting pillars 33 are both formed by photolithography, that is, the annular frames 31 and the supporting pillars 33 are both formed by exposure and etching processes.

[0097] The ring frame 31 and the support column 33 can be made of photosensitive insulating material, which can be in a solid state. For example, a PC1025 photosensitive film is used. In this way, the ring frame 31 and the support column 33 are formed on the photosensitive insulating material by exposure and etching.

[0098] In this embodiment, multiple annular frames 31 and multiple support columns 33 are formed by photolithography, which can reduce the workload of placing the support columns 33. The thickness of the support structure 3 along the first direction is uniform and consistent, which improves the gain uniformity. Compared with the traditional placement of the thermal adhesive film support column 33, it greatly saves the time cost of manual placement and simplifies the assembly process. Due to the use of multiple annular frames 31 and the support structure 3 combined with the reinforcement body 32, for the usual photosensitive film process, the allowable range of the residual tension of the screen 1 is improved, which greatly broadens the selection range of parameters such as the density, diameter and tension of the support column 33.

[0099] It is understandable that the exposure may be performed by ultraviolet light or light beams of other wavelengths, and the etching may be performed by chemical etching.

[0100] In some embodiments, the reinforcement body 32 is formed by solidifying colloid. That is, the reinforcement body 32 can be made of colloid material, and the reinforcement body 32 can be formed by adding liquid colloid between two adjacent annular frames 31 and waiting for the colloid to solidify into a solid state to form the reinforcement body 32.

[0101] In this embodiment, the reinforcing body 32 is formed by solidifying colloid, and the reinforcing body 32 and the annular frame 31 can be bonded together during the manufacturing process of the reinforcing body 32, which is simple to operate and easy to form.

[0102] Glues include, but are not limited to, epoxy resins.

[0103] For some examples, see Figures 2 to 6 , the reinforcing body 32 fills the gap between two adjacent annular frames 31. Specifically, the reinforcing body 32 fills the gap between two adjacent annular frames 31, so that the reinforcing body 32 is an integrated structure, the connection area between the reinforcing body 32 and the annular frame 31 is large, the connection is more stable, and the structural strength is better.

[0104] Exemplarily, all the annular frames 31 and all the supporting pillars 33 of all the supporting structures 3 are formed by one photolithography step.

[0105] Taking the example that the micro-grid gas detection device has a first support structure 301 and a second support structure 302, the first support structure 301 and the second support structure 302 can be manufactured through the following steps:

[0106] S10. First, at least one layer of photosensitive film can be placed on both sides of the wire mesh 1 along the first direction, and then the patterned mask plate is set on the photosensitive film located on the second side of the wire mesh 1;

[0107] S20. Through photolithography etching, the pattern of the mask plate is transferred to the photosensitive films on both sides of the wire mesh 1 along the first direction to form a plurality of annular frames 31 and a plurality of support columns 33;

[0108] S30. Fill the gap between two adjacent annular frames 31 with glue;

[0109] S40. After the glue solidifies, a solidified body 32 is formed, and the first support structure 301 and the second support structure 302 are obtained.

[0110] The above steps S10, S20, S30, and S40 can be implemented in sequence. Among them, step S20 includes exposure and etching.

[0111] It can be understood that in the case where the second support structure 302 is not provided on the second side of the wire mesh 1, step S10 can be to place at least one layer of photosensitive film on the first side of the wire mesh 1 along the first direction, steps S20 and S30 remain unchanged, and in step S40, after the glue solidifies, a solidified body 32 is formed to obtain the first support structure 301.

[0112] In this embodiment, the first support structure 301 and the second support structure 302 can be formed through one mask plate and one photolithography etching process, and the operation is simple.

[0113] The embodiment of the present application provides a manufacturing method for a micro-grid gas detection device. The manufacturing method includes:

[0114] S50. Tighten the wire mesh 1 with tension to the mesh frame;

[0115] S60. Manufacture a patterned mask plate;

[0116] S10. First, at least one layer of photosensitive film can be placed on both sides of the wire mesh 1 along the first direction, and then the patterned mask plate is set on the photosensitive film located on the second side of the wire mesh 1;

[0117] S20. Through photolithography etching, the pattern of the mask plate is transferred to the photosensitive films on both sides of the wire mesh 1 along the first direction to form a plurality of annular frames 31 and support columns 33;

[0118] S30. Fill the gap between two adjacent annular frames 31 with glue;

[0119] S40. After the colloid solidifies, a solidified body 32 is formed, and a first support structure 301 and a second support structure 302 are obtained.

[0120] Steps S10, S20, S30, and S40 are as described above and will not be elaborated here.

[0121] Step S50 is used to stretch the screen so that the screen 1 maintains tension.

[0122] The tension of the screen 1 can be designed according to requirements. For example, in the screen stretching stage, the tension of the screen 1 is not less than 2 kg / cm (kilograms per centimeter). It can be understood that the upper limit of the tension is the tension limit of the screen 1.

[0123] It should be noted that existing screen stretching equipment in the prior art can be used to stretch the screen 1, which will not be elaborated here.

[0124] Exemplarily, the photosensitive film can be fixed on a laminating machine, and then the photosensitive film is attached to the readout anode 2 through the laminating machine. For example, after the readout anode 2 is placed horizontally, it slowly and uniformly passes through the heating roller of the laminating machine. At the same time, the photosensitive film enters the roller to be attached to the readout anode 2. In this way, the photosensitive film can be attached to both sides of the screen 1 along the first direction, which will not be elaborated here. After laminating, step S20 is implemented to perform exposure on the above structure to achieve pattern transfer, and then the excess photosensitive film is removed by etching to form the annular frame 31 and the support column 33 of the support structure 3.

[0125] It should be noted that the pattern of the mask can be designed according to the dimensions and shapes of the support column 33 and the annular frame 31, etc.

[0126] In some embodiments, the number of layers of the photosensitive film can be selected according to the thickness of the single-layer photosensitive film and the distance between the screen 1 and the readout anode 2. Taking the distance between the screen 1 and the readout anode 2 as hundreds of micrometers and the thickness of the single-layer photosensitive film as 50 μm to 65 μm as an example, the second support structure 302 can be prepared by stacking two layers of photosensitive films along the first direction. In this way, the dimension of the support column 33 of the second support structure 302 along the first direction is approximately 100 μm to 130 μm, meeting the requirement that the distance between the screen 1 and the readout anode 2 is hundreds of micrometers.

[0127] It can be understood that according to the differences in the thickness of the single-layer photosensitive film and the distance between the screen 1 and the readout anode 2, the second support structure 302 can also be prepared by selecting one layer, three layers, or more than three layers of photosensitive films.

[0128] In some embodiments, taking the thickness of the single-layer photosensitive film as an example, which is 50 μm to 65 μm, the first support structure 301 can be prepared by one layer of photosensitive film. In this way, the dimension of the support column 33 of the first support structure 301 along the first direction is approximately 50 μm to 65 μm.

[0129] It can be understood that according to the thickness of the single-layer photosensitive film and the distance between the wire mesh 1 and the readout anode 2, the first support structure 301 can also be prepared by two layers, three layers or more than three layers of photosensitive film.

[0130] In some embodiments, the multiple support columns 33 of a single support structure 3 can be arranged in a triangular close-packed, square close-packed or hexagonal close-packed manner.

[0131] Triangular close-packing means that multiple support columns 33 are arranged in a triangular pattern.

[0132] Square close-packing means that multiple support columns 33 are arranged in a square pattern.

[0133] Hexagonal close-packing means that multiple support columns 33 are arranged in a hexagonal pattern.

[0134] In order to maintain good performance of the detector, the arrangement of the support columns 33 needs to be considered. The problem of the arrangement of the support columns 33 can be transformed into the problem of close-packing of equal-radius circles on a two-dimensional plane perpendicular to the first direction. In other words, a circle needs to be drawn with a certain radius centered at the position of one of the support columns 33, and the circle needs to enclose as much area as possible. Exemplarily, the multiple support columns 33 of a single support structure 3 can be arranged in a hexagonal close-packed manner on a two-dimensional plane perpendicular to the first direction. Compared with square close-packing, the distance between any two support columns 33 in hexagonal close-packing is reduced by about 30%.

[0135] In some embodiments, the equivalent diameter of the support column 33 can be between 0.1 mm and 0.4 mm.

[0136] Specifically, the equivalent diameter can be four times the ratio of the cross-sectional area to the perimeter. Taking the cross-sectional shape of the support column 33 as a square as an example, the equivalent diameter of the support column 33 refers to four times the ratio of the area of the square to the perimeter. Taking the cross-sectional shape of the support column 33 as a circle as an example, the equivalent diameter of the support column 33 refers to four times the ratio of the area of the circle to the perimeter, that is, the diameter of the circle.

[0137] Exemplarily, the equivalent diameter of the support column 33 can be 0.1 mm, 0.15 mm, 0.2 mm, 0.25 mm, 0.3 mm or 0.4 mm, etc.

[0138] Considering the manufacturing yield, in some embodiments, the wire mesh 1 can be formed by braiding wires with a width of 18 μm. The wire mesh 1 can be 400 mesh, and the aperture diameter of the holes in the wire mesh 1 can be about 46 μm. The equivalent diameter of the support column 33 can be greater than twice the aperture diameter. For example, the equivalent diameter of the support column 33 can be greater than 100 μm.

[0139] It can be understood that the shape of the holes in the wire mesh 1 can be circular or polygonal, etc. The present application does not limit this. Taking the above example of braiding the wire mesh 1 with wires, the holes in the wire mesh 1 can be square, and the aperture diameter of the holes can be the side length of the square. That is to say, the side length of the quadrilateral hole can be 46 μm.

[0140] In some embodiments, the equivalent diameter of the support column 33 can be D, where 200 μm ≤ D ≤ 400 μm.

[0141] Exemplarily, D can be 200 μm, 220 μm, 240 μm, 260 μm, 310 μm, or 400 μm, etc.

[0142] In this embodiment, the smaller the equivalent diameter of the support column 33, the higher the development accuracy and etching difficulty of photolithography. However, the larger the equivalent diameter of the support column 33, the easier it is to increase the dead zone. 200 μm ≤ D ≤ 400 μm can reduce the photolithography difficulty while ensuring that the dead zone ratio does not exceed 1%, taking into account both product performance and manufacturing requirements.

[0143] In some embodiments, in a single support structure 3, the distance between two adjacent support columns 33 can be L, where 2 mm ≤ L ≤ 4 mm.

[0144] Exemplarily, L can be 2 mm, 2.5 mm, 3 mm, or 4 mm, etc.

[0145] The smaller the distance between two adjacent support columns 33, the smaller the effective area of the micro-grid gas detector, increasing the detector dead zone and thus affecting the detection effect. The larger the distance between two adjacent support columns 33, the more it affects the support for the wire mesh 1. 2 mm ≤ L ≤ 4 mm can provide good support while the dead zone ratio does not exceed 1%, ensuring the anti-interference performance.

[0146] As an example, in some embodiments, the equivalent diameter of the support column 33 can be 0.2 mm, and the spacing between two adjacent support columns 33 can be 2 mm. In some embodiments, the equivalent diameter of the support column 33 can be 0.3 mm, and the spacing between two adjacent support columns 33 can be 3 mm. In some embodiments, the equivalent diameter of the support column 33 can be 0.4 mm, and the spacing between two adjacent support columns 33 can be 4 mm. In the above embodiments, when the manufacturing yield is relatively high, the support column 33 can provide good support for the wire mesh 1, and the micro-grid gas detection device has good noise anti-interference ability.

[0147] Regarding the graphic design of the mask, exemplarily, the micro-grid gas detection device adopts a single channel, and the effective area 21 of the readout anode 2 is a circle with a diameter of 4 cm.

[0148] Step S1: Select the arrangement mode of the support column 33 according to the shape of the effective area 21 of the readout anode 2, and draw a full-plane dot matrix distribution on the mask.

[0149] For example, if the surface of the readout anode 2 is flat, hexagonal close packing can be adopted, and then a hexagonal dot matrix can be drawn on the mask.

[0150] Again, for example, considering that some support columns 33 may be in the gaps of the readout anode 2, which may affect the uniformity, square close packing can be adopted, and then a square dot matrix can be drawn on the mask.

[0151] Step S2: Draw the inner boundary of the annular inner frame 311 on the mask.

[0152] Specifically, the inner boundary of the annular inner frame 311 can be determined according to the shape of the effective area 21. The annular inner frame 311 can enclose all the support columns 33.

[0153] Step S3: Draw other annular frames 31 on the mask.

[0154] Specifically, at least one annular frame 31 with a similar shape is drawn on the outer periphery of the annular inner frame 311.

[0155] Taking the example that there is an annular outer frame 312 outside the annular inner frame 311, four annular lines can be drawn on the mask. The four annular lines together divide into 5 regions. Looking in the radial direction, the central region surrounded by the innermost annular line surrounds and encloses the support column 33, the outside of the outermost annular line defines an open region, and three annular closed regions are defined in the middle.

[0156] Remove the physical structure of the photosensitive film in the central region to form the support column 33. Remove the physical structure of the photosensitive film in the open region.

[0157] The three annular closed regions are the inner ring, the middle ring, and the outer ring respectively. The inner ring retains the solid structure of the photosensitive film to form an annular inner frame 311, and the outer ring retains the solid structure of the photosensitive film to form an annular outer frame 312. The middle ring removes the solid structure of the photosensitive film, that is, the middle ring is hollowed out for setting the reinforcing body 32. For example, after the middle ring is hollowed out, a colloid is filled to form the reinforcing body 32.

[0158] In a specific embodiment, please refer to Figures 1 to 6 , the wire mesh 1 is made of stainless steel wire mesh 1, and support structures 3 are arranged on both sides of the wire mesh 1 along the first direction. Taking the plane perpendicular to the first direction as the projection plane, the projections of the two support structures 3 coincide. The support structure 3 includes two annular frames 31, a reinforcing body 32, and a plurality of support columns 33. The reinforcing member 4 is in an annular structure surrounding an avoidance opening 4a. The equivalent diameter of the support column 33 can be 0.4 mm, and the distance between two adjacent support columns 33 can be 4 mm. The plurality of annular frames 31 and the plurality of support columns 33 are both formed by photolithography. The reinforcing body 32 fills the gap between two adjacent annular frames 31, and the reinforcing body 32 is formed by curing epoxy resin.

[0159] The above-mentioned micro-grid gas detection device is tested, and there is no significant disturbance in the noise limit on the oscilloscope. The noise threshold set during the test of the micro-grid gas detection device under the 55 Fe source does not increase significantly, showing good noise anti-interference ability.

[0160] In the description of this specification, the descriptions referring to the terms "one embodiment", "some embodiments", and "exemplary" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the embodiments of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0161] The various embodiments / embodiment modes provided in the present application can be combined with each other without contradiction. The above are only the preferred embodiments of the present application, and are not used to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A microgrid gas detection device, characterized in that: include: Silk screen; A readout anode is disposed on a first side of the screen along a first direction; A support structure is provided between the wire mesh and the readout anode, and includes a plurality of annular frames, at least one reinforcement body and a plurality of support columns. The plurality of annular frames are nested in sequence, and the reinforcement body connects two adjacent annular frames. The innermost annular frame is defined as an annular inner frame, and a plurality of support columns are located in the annular inner frame. The support columns, the annular frames and the reinforcement body are all connected to the wire mesh.

2. The microgrid gas detection device according to claim 1, characterized in that: The support structure is disposed on the second side of the wire mesh along the first direction.

3. The microgrid gas detection device according to claim 2, characterized in that: Taking a plane perpendicular to the first direction as a projection plane, the projections of the two support structures overlap.

4. The microgrid gas detection device according to claim 2, characterized in that: The microgrid gas detection device includes a reinforcement member, the support structure located on the second side of the wire mesh is defined as a first support structure, and the reinforcement member is arranged on a side of the first support structure away from the wire mesh.

5. The microgrid gas detection device according to claim 4, characterized in that: The reinforcing member is in an annular structure surrounding a avoidance opening, and a plane perpendicular to the first direction is used as a projection plane, and a projection of an effective area of ​​the readout anode is located within the projection range of the avoidance opening.

6. The microgrid gas detection device according to claim 5, characterized in that: Taking the plane perpendicular to the first direction as the projection plane, the inner edge line of the projection of the reinforcement member does not exceed the inner edge line of the projection of the annular inner frame of the first supporting structure.

7. The microgrid gas detection device according to claim 5, characterized in that: Taking the plane perpendicular to the first direction as the projection plane, the projections of the reinforcement body and the annular frame of the first supporting structure are both located within the projection range of the reinforcement member.

8. The microgrid gas detection device according to claim 4, characterized in that: The reinforcing member is made of ceramic, stainless steel and / or glass.

9. The microgrid gas detection device according to claim 1, characterized in that: The plurality of annular frames and the plurality of supporting pillars are all formed by photolithography; and / or, The reinforcement body is formed by solidifying the colloid.

10. The microgrid gas detection device according to any one of claims 1 to 9, characterized in that: The reinforcing body fills a gap between two adjacent annular frames.

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