Tunneling transistor design method based on TMDS nanobelt material
Through the heterojunction design method of allogeneic nanoribbons, the geometric structure difference of TMDs materials is used to form a potential barrier, which solves the problem of poor material matching in traditional tunneling transistors, and achieves efficient tunneling effect and device performance stability.
Patent Information
- Application Number
- CN202510236138.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-28
- Publication Date
- 2025-06-13
AI Technical Summary
Traditional heterojunction materials have problems such as poor material matching, poor interface quality, and unstable performance in tunneling transistors, resulting in degradation of device performance and low reliability.
The heterojunction design method of allomeric nanoribbons is adopted to adjust the geometric structure of transition metal dichalcogenide (TMDs) materials to form zigzag and handrail nanoribbon heterojunctions, and the barrier is formed at the handrail interface by utilizing the band structure differences, thereby achieving single barrier tunneling and double barrier resonance tunneling effects.
It effectively avoids material matching problems, improves the electrical transmission efficiency and long-term reliability of the device, enhances the flexibility and scalability of the design, and integrates multiple tunneling devices with different functions on a heterojunction.
Smart Images
Figure CN120145973A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of field effect transistors, and particularly to a design method of a tunneling transistor based on TMDS nanoribbon materials. Background Art
[0002] As a frontier quantum electronics device, the single-barrier tunneling and resonant tunneling transistor has broad application prospects in fields such as microwave communication, high-speed digital circuits, neuromorphic computing, and quantum information processing due to its unique quantum tunneling mechanism. In recent years, researchers have used heterojunction materials constructed by combining a wide-bandgap semiconductor with another narrow-bandgap semiconductor, such as AlGaAs / GaAs, InAlAs / InGaAs, AlInAs / GaInAs, etc., and applied them to tunneling transistors, which can effectively suppress interface scattering and significantly improve the transport characteristics of tunneling transistors.
[0003] However, traditional heterojunction systems composed of different materials have many difficulties: First, the mismatch of material lattice constants is a severe technical obstacle. This mismatch leads to structural disorders at the atomic level, easily triggering potential material property degradation problems. Lattice distortion and deformation at the interface will not only reduce the electrical transport efficiency of the device, but also introduce a large number of defects inside the material, such as dislocations, vacancies, and impurities. These microscopic defects will directly damage the key performance parameters of the device. Second, the inconsistency of the material thermal expansion coefficients will also exacerbate the instability of the material combination. During temperature changes, the heterojunction material is extremely prone to generate thermal stress, which in turn causes cracking and delamination phenomena, seriously threatening the long-term reliability and service life of the device. Third, the above-mentioned defect and stress problems are not simple single factors, but complex systematic challenges that are mutually coupled and amplified, which makes the existing solutions face great technical bottlenecks in material design and process optimization. Traditional compensation and mitigation means, such as introducing buffer layers and adjusting interface bonding methods, often have little effect and fail to fundamentally solve the essential problem of material matching, which also becomes the key bottleneck restricting the further development of tunneling transistors.
[0004] When these materials are applied to tunneling transistors, there are key problems such as complex processes, poor material compatibility, unstable device performance, material interface quality, low integration, and single structure. Summary of the Invention
[0005] The present invention provides a design method of a tunneling transistor based on TMDs (transition metal dichalcogenide) nanoribbon materials. Only one type of material nanoribbon is used to design a homo-isomeric nanoribbon heterojunction and applied to the tunneling transistor, fundamentally avoiding the problem of material matching. In addition, this homo-isomeric nanoribbon heterostructure design has a high degree of flexibility and can realize the integration of multiple tunneling transistors on this homo-isomeric nanoribbon heterojunction.
[0006] The technical solution of the present invention is to provide a tunneling transistor design method based on TMDs nanoribbon materials, comprising the following steps: S1. Select transition metal dichalcogenides, build zigzag and armchair nanobelts of the material and calculate the band structure diagrams. Use the two band structure diagrams to calculate and verify whether the barrier formation conditions are met; S2. Using TMDs materials that meet the conditions for barrier formation as raw materials, design a heterojunction of the same type and a heterostructure of nanoribbons, and build a quantum transport system based on the heterostructure, calculate the transmission coefficient spectrum of the system, and test whether single barrier tunneling and / or resonant tunneling occurs in the system; After the transport process is verified, the heterojunctions in S3 and S2 are used to design single barrier tunneling and / or resonant tunneling transistors.
[0007] Optionally, the transition metal disulfide compound includes but is not limited to MoS 2 、MoSe 2 , WS 2 or WSe 2 .
[0008] Optionally, during verification in S1, the energy corresponding to the valence band top of the zigzag nanoribbon and the armrest nanoribbon band structure is found according to the band structure diagram. , ; The energy corresponding to the conduction band top of the zigzag and armrest nanoribbon band structures , ; calculate , ; when , and With interval There is an intersection , it means that the conditions for the formation of potential barrier are met, otherwise it is not met.
[0009] Optionally, when designing the isomorphous and heterogeneous nanoribbon heterojunction in S2, a simulation tool is used to establish a zigzag nanoribbon model of the material, and then the isomorphous and heterogeneous nanoribbon heterojunction model is designed based on the nanoribbon model.
[0010] Optionally, the simulation tool is kwant.
[0011] Optionally, when calculating the transmission coefficient spectrum of the system in S2, the energy interval is .
[0012] Optionally, by calculating the transmission coefficient spectrum, it is checked whether the system undergoes single barrier tunneling and / or double barrier resonant tunneling.
[0013] Optionally, the transmission coefficient is , ,in and represent the electron and hole transmission coefficients, respectively.
[0014] The present invention also relates to a single barrier tunneling and / or double barrier resonant tunneling transistor obtained according to the design method.
[0015] Optionally, the transistor is a single TMDs nanoribbon heterojunction integrating at least two tunneling devices with different functions, and the tunneling devices with different functions include a resonant tunneling device and a single barrier tunneling device.
[0016] The present invention has the following beneficial effects: TMDs materials all have the same regular hexagonal lattice structure. When they are cut into nanoribbon structures, they are often divided into zigzag and armrest types according to the edge type of the nanoribbon. Special quantum states will appear at the boundaries of TMDs nanoribbons. Electrons at the nanoribbon boundary are transported along the bottom of the conduction band, and holes are transported along the top of the valence band. This quantum state is called an edge state. In TMDs nanoribbons, carriers have the characteristic of being transported along the nanoribbon boundary. The zigzag nanoribbon and armrest nanoribbon have obvious differences in their band structures due to the different arrangements of boundary atoms.
[0017] The present invention forms a heterojunction of isomorphous nanobelts by adjusting the geometric structure of the TMDs material, and forms a potential barrier at the armrest-type interface by utilizing the difference between the band structures of zigzag and armrest-type nanobelts, thereby realizing single-barrier tunneling and double-barrier resonant tunneling effects. This structural design can effectively regulate the transport characteristics of carriers, provides the necessary physical basis for the normal operation of tunneling transistors, and avoids the problems caused by unsatisfactory material matching in traditional tunneling transistors. This innovative method makes the design of tunneling transistors no longer rely on the combination of heterogeneous materials, thereby greatly simplifying the complexity of material matching and enhancing the flexibility and scalability of the design.
[0018] By designing nanoribbon heterojunctions of different geometric shapes to design tunneling transistors with specific functions, it is possible to integrate multiple tunneling devices with different functions on one heterojunction. This method has strong flexibility and support in device function integration, structural optimization, and adapting to different design requirements, and can meet the needs of various complex tunneling transistor system designs.
[0019] The tunneling transistor constructed using the design method proposed by the present invention has significant performance regulation capabilities. By adjusting the width of the armchair boundary, the thickness of the potential barrier can be dynamically changed, further regulating the intensity of the tunneling effect. In addition, the changes in the geometric morphology of different nanoribbons in the design can also achieve precise regulation of the device, optimize the current transmission characteristics, and improve the on-off ratio of the tunneling current. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a flowchart of the method provided by the present invention.
[0021] Figure 2 It is a flowchart for verification in S1.
[0022] Figure 3 It is a top view of the zigzag (left) and armchair (right) nanoribbons of TMDs.
[0023] Figure 4 For MoS 2 Energy band structure diagrams of zigzag (left) and armchair (right) nanoribbons.
[0024] Figure 5 It is a detailed flowchart for designing isomeric heterojunctions of TMDs materials and constructing a quantum transport system.
[0025] Figure 6 It is an isomeric nanoribbon heterojunction suitable for designing a resonant tunneling transistor.
[0026] Figure 7 It is an isomeric nanoribbon heterojunction suitable for designing a single-barrier tunneling transistor.
[0027] Figure 8 It is the transmission coefficient spectrum of a molybdenum disulfide nanoribbon heterojunction.
[0028] Figure 9 It is the structural diagram of a resonant tunneling transistor.
[0029] Figure 10 Structural diagram of a single-barrier tunneling transistor.
[0030] Figure 11 It is a side view of a single-barrier tunneling transistor.
[0031] Figure 12 It is the structural diagram of a multi-barrier resonant tunneling transistor.
[0032] Figure 13 It is to integrate multiple tunneling devices with different functions on a nanoribbon heterojunction.
[0033] Figure 14 For Figure 13 The deformation of the design scheme, which is a design scheme with a smaller size.
[0034] Figure 15 For Figure 9 The designed template shows the electron (left) / hole (right) IV characteristic curves obtained through simulation calculations. Specific implementation manners
[0035] Unless otherwise specified, the experimental methods in the following embodiments are all conventional methods. Unless otherwise specified, the materials used in the following embodiments are all commercially available products.
[0036] The present invention relates to a design method for a tunneling transistor based on TMDs nanoribbon materials, including the following steps: S1. Select transition metal dichalcogenide compounds, calculate the band structure diagrams of the zigzag and armchair nanoribbons of the material respectively, and verify whether the barrier formation conditions are satisfied through the two band structure diagrams; S2. Using the TMDs material that meets the barrier formation conditions as the raw material, design an isomeric nanoribbon heterojunction, construct a quantum transport system based on the heterojunction, calculate the transmission coefficient spectrum of the system, and test the system transportation process; S3. After the heterojunction in S2 passes the test of the transport process, it is used to design a single-barrier tunneling and / or resonant tunneling transistor.
[0037] The following will describe the implementation scheme of the present invention in detail in combination with embodiments. However, those skilled in the art will understand that the following embodiments are only used to illustrate the present invention and should not be regarded as limiting the scope of the present invention.
[0038] Embodiment 1 The design method flow provided by the present invention is as Figure 1 shown and includes the following steps: (1) Select the TMDs material for designing the tunneling transistor: Common ones such as MoS 2 , MoSe 2 , WS 2 or WSe 2 etc. Initially determine which material to choose for the design. In this embodiment, the common TMDs material MoS 2 is taken as an example for further illustration.
[0039] (2) Verify the applicability of this design method to the TMDs material: Since the number of TMDs materials is too large, this method may not be applicable to all TMDs materials. Therefore, it is necessary to initially verify the applicability of this method to the selected material. The verification process is as Figure 2 shown.
[0040] All TMDs materials have the same regular hexagonal lattice structure. When they are cut into nanoribbon structures, they are often classified into zigzag and armchair types according to the edge type of the nanoribbon, as shown in Figure 3 . First, calculate the Figure 3 energy band structure diagram of the zigzag nanoribbon on the left and Figure 3 the energy band structure diagram of the armchair nanoribbon on the right. Verify whether the barrier formation conditions are met through the two energy band structure diagrams: In TMDs nanoribbons, carriers have the characteristic of transporting along the nanoribbon boundary. This is because special quantum states will appear at the boundaries of TMDs nanoribbons. Electrons at the nanoribbon boundary transport along the bottom of the conduction band, and holes transport along the top of the valence band. This quantum state is called the edge state. Due to the different arrangements of boundary atoms in zigzag and armchair nanoribbons, their energy band structures are significantly different.
[0041] The specific verification steps are as follows: 1) In the first step, find the energies corresponding to the top of the valence band in the energy band structures of zigzag and armchair nanoribbons, such as Figure 4 in , .
[0042] 2) In the second step, find the energies corresponding to the top of the conduction band in the energy band structures of zigzag and armchair nanoribbons, such as Figure 4 in , .
[0043] 3) In the third step, calculate , . Corresponding to Figure 4 the marked in and . If is satisfied, and has an intersection with the interval . It indicates that the barrier formation conditions are met; otherwise, they are not. Taking the MoS 2 material research and calculation as an example, the barrier formation conditions are met; further, calculations are also carried out for MoSe 2 , WS 2 or WSe 2 , and the barrier formation conditions are met, that is, the above materials are applicable and can apply this design method.
[0044] (3) Design isostructural heterojunctions based on this TMDs material and construct a quantum transport system to examine the transport process of the system: After the selected material is preliminarily verified in (2), it is designed into an isostructural heterojunction. Based on this heterojunction, a corresponding quantum transport system is built, and the transmission coefficient spectrum (the relationship between the transmission coefficient and the carrier energy) of this system is calculated. The refined flowchart is as Figure 5 , and the specific steps are as follows: 1) Use a simulation tool suitable for quantum transport to establish a zigzag nanoribbon model of this TMDs material, as Figure 3 shown on the left.
[0045] 2) Design a heterojunction model based on the nanoribbon model: If it is used to design a resonant tunneling transistor, the model in 1) is designed into Figure 6 , and if it is used to design a tunneling transistor, it is designed into Figure 7 heterojunction. In fact, by reducing the width of the middle region of the zigzag nanoribbon designed in 1) and keeping the model symmetric up and down, the isostructural nanoribbon heterojunctions shown in Figure 6 , 7 can be obtained.
[0046] 3) Establish a quantum transport system based on this heterojunction model and calculate the transmission coefficient spectrum: Use the function in the simulation tool to establish a quantum transport system for the model in 2), and calculate the transmission coefficient spectrum (the relationship between the transmission coefficient and the energy, and the energy range is set ), and tunneling or resonant tunneling phenomena can be observed. Taking molybdenum disulfide as an example of the application of this design method, the calculated transmission coefficient spectrum is as Figure 8 . Among them, and respectively represent the relationship between the electron / hole energy and the electron / hole transmission coefficient, and represents the total transmission coefficient. And . It can be seen from Figure 8 that at specific energies of electrons and holes, the transmission coefficient reaches a peak (the transmission coefficient reaches about 1). This resonance peak is a typical characteristic of resonant tunneling, which means that electrons and holes are likely to cross the potential barrier at this energy.
[0047] Explanation of the principle of the resonant tunneling effect in the heterojunction designed by the present invention: Taking electrons as an example, referring to Figure 6 , when transporting at the boundary, it will successively experience 1) zigzag boundary, 2) armchair boundary, 3) zigzag boundary, 4) armchair boundary, and 5) zigzag boundary. And the energy of the conduction band bottom at the zigzag boundary is lower than that at the armchair boundary, and the difference is as Figure 4 in This means that potential barriers will be formed at the armchair boundaries. Since there are two armchair boundaries in our system, the entire heterojunction forms a double-barrier system (observing the Figure 6 nanoribbon heterojunction boundary), meeting the conditions for the occurrence of the resonant tunneling effect.
[0048] Based on this resonant tunneling phenomenon that appears in this quantum transport system, it further demonstrates that the tunneling and resonant tunneling field-effect transistor design method proposed in the present invention, which is based on the geometric structure of TMDS (transition metal dichalcogenide) materials, has been successfully realized on MoS2.
[0049] (4) Using the designed heterojunction to design tunneling and resonant tunneling transistors: After the designed heterojunction passes the inspection of the transport process in (3), it can be used to design tunneling and resonant tunneling transistors. By adding a source electrode and a drain electrode to both ends of the designed heterojunction, a single-barrier tunneling transistor and / or a double-barrier resonant tunneling transistor can be constructed. The single-barrier tunneling transistor utilizes the potential barrier formed by the heterojunction to assist in realizing the quantum tunneling of electrons, while the double-barrier resonant tunneling transistor enables electrons to achieve resonant tunneling at specific energy levels, resulting in a higher current output. The specific structural diagrams are as shown in Figure 9 and Figure 10 , which respectively show the basic templates of the double-barrier resonant tunneling and single-barrier tunneling transistors provided by this design method. Figure 11 shows a side view of the single-barrier tunneling transistor.
[0050] In addition, the design method of constructing the isomeric nanoribbon heterojunction based on this material has extremely high flexibility, which enables us to obtain greater design freedom when designing tunneling transistors. For example, Figure 12 shows a design diagram of a multi-barrier resonant tunneling device; Figure 13 shows a design scheme of integrating multiple tunneling devices with different functions on a single nanoribbon heterojunction, where the upper boundary is a resonant tunneling device and the lower boundary is a tunneling device; in addition, Figure 14 shows a deformation of the Figure 13 design scheme, which is still a design scheme integrating multiple devices. These examples show that based on the design method of the present invention, it can not only effectively guide the design of tunneling transistors, but also has excellent scalability. Whether it is in device function integration, structure optimization, or adaptation to different design requirements, this method can provide strong support and is applicable to the design of various complex tunneling transistor systems.
[0051] (5) Tunneling and resonant tunneling transistors based on the isomeric heterojunction of this TMDs material: After (4), a tunneling transistor based on the isomeric heterojunction of this TMDs material will be finally obtained.
[0052] Based on molybdenum disulfide (MoS2 For this common two-dimensional transition metal dichalcogenide (TMDs) material, we designed Figure 9 the resonant tunneling transistor (RTT) shown below. Figure 15 The IV characteristic curve of this transistor obtained by simulation calculation is shown. It can be clearly seen from the figure that within a specific voltage range, as the voltage increases, the current instead shows a downward trend. This phenomenon is the typical negative differential resistance effect in resonant tunneling devices. Moreover, by adjusting the width of the armchair region , precise control of the current is achieved.
[0053] The above embodiments describe the preferred implementation manners of the present invention, but the present invention is not limited thereto. Within the technical concept scope of the present invention, various simple modifications can be made to the technical solutions of the present invention, including any other combinations of each technical feature. These simple modifications and combinations should also be regarded as the content disclosed by the present invention and fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent shall be subject to the appended claims.
Claims
1. A tunneling transistor design method based on TMDs nanoribbon materials, characterized in that: The following steps are involved: S1. Select transition metal dichalcogenides (TMDs), build zigzag and armchair nanobelts of the material and calculate the band structure diagrams. Use the two band structure diagrams to calculate and verify whether the barrier formation conditions are met; S2. Using TMDs materials that meet the conditions for barrier formation as raw materials, design a heterojunction of the same type and a heterostructure of nanoribbons, and build a quantum transport system based on the heterostructure, calculate the transmission coefficient spectrum of the system, and test whether the system undergoes single barrier tunneling and / or double barrier resonant tunneling; After the transport process is verified, the heterojunctions in S3 and S2 are used to design single-barrier tunneling and / or double-barrier resonant tunneling transistors.
2. The design method according to claim 1, characterized in that: The transition metal dichalcogenide compounds include but are not limited to MoS2, MoSe2, WS2 or WSe2.
3. The design method according to claim 1, characterized in that: When verifying in S1, find out the energy corresponding to the valence band top of the zigzag nanoribbon and the armrest nanoribbon band structure according to the band structure diagram. , ; The energy corresponding to the conduction band top of the zigzag and armrest nanoribbon band structures , ; calculate , ; when , and With interval There is an intersection , it means that the conditions for the formation of potential barrier are met, otherwise it is not met.
4. The design method according to claim 1, characterized in that: When designing the isomorphous and heterogeneous nanoribbon heterojunction in S2, a simulation tool is used to establish a zigzag nanoribbon model of the material, and then the isomorphous and heterogeneous nanoribbon heterojunction model is designed based on the nanoribbon model.
5. The design method according to claim 4, characterized in that: The simulation tool is kwant.
6. The design method according to claim 3, characterized in that: When calculating the transmission coefficient spectrum of the system in S2, the energy range is .
7. The design method according to claim 6, characterized in that: By calculating the transmission coefficient spectrum, it is examined whether the system undergoes single-barrier tunneling and / or double-barrier resonant tunneling.
8. The design method according to claim 7, characterized in that: The transmission coefficient is , ,in and are the transmission coefficients of electrons and holes, respectively.
9. A resonant tunneling transistor and / or a tunneling transistor obtained according to the design method according to any one of claims 1 to 8.
10. The transistor according to claim 9, characterized in that: The transistor is a single TMDs nanobelt heterojunction integrating at least two tunneling devices with different functions, wherein the tunneling devices with different functions include a resonant tunneling device and a single barrier tunneling device.