Image quality correction compensation method and system of near-to-eye display system

Abstract

The invention generally relates to the technical field of display systems. Specifically, the invention relates to an image quality correction compensation method and system of a near-to-eye display system. The method comprises the following steps: determining a first compensation coefficient; determining a static coefficient proportion according to the compensation coefficient range, and transforming the first dynamic compensation coefficient according to the static coefficient proportion to generate a second dynamic compensation coefficient; the second dynamic compensation coefficient is stored in a nonvolatile memory, and the static coefficient proportion is stored in a register; and after the system is powered on, scaling the second dynamic compensation coefficient by the driving circuit according to the static coefficient proportion to generate a first dynamic compensation coefficient, and loading the first dynamic compensation coefficient to the volatile memory. According to the method, the precision and flexibility of image quality correction compensation of the display system can be remarkably improved while the requirement of the maximum compensation coefficient range can be met, storage space waste is reduced, and user experience is improved.

Description

Technical Field

[0001] The present invention generally relates to the technical field of display systems. Specifically, the present invention relates to a method and system for image quality correction and compensation of a near-eye display system. Background Art

[0002] In a near-eye display system, in order to correct the brightness non-uniformity or color deviation of a display module, it is usually necessary to use Demura compensation technology to perform image quality correction on the display module.

[0003] During the image quality correction process, it is necessary to set corresponding Demura compensation coefficients for each sub-pixel of the display module. For a resolution of 1920*1080, when a sub-pixel requires 8-bit coefficient storage, the required storage space is 1920*1080*8 bits in size. When a sub-pixel requires 9-bit coefficient storage, the required storage space is 1920*1080*9 bits in size. The larger the coefficient storage space required by the pixel, the higher the cost of the integrated circuit (IC), and the miniaturization of the integrated circuit becomes difficult. Therefore, it is necessary to improve the compensation accuracy of the system in a storage space with a lower capacity as much as possible.

[0004] Therefore, the prior art usually needs to perform multiplicative compensation or additive compensation on image data. However, existing Demura coefficient coding modes (such as 1Q7 and 2Q6 coding modes) have problems of insufficient range or serious space waste in the representation of multiplicative compensation coefficients, which will seriously affect the image quality correction effect and storage efficiency of the display system. Summary of the Invention

[0005] To at least partially solve the above problems in the prior art, the present invention proposes a method for image quality correction and compensation of a near-eye display system, including the following steps:

[0006] Provide a first dynamic compensation coefficient;

[0007] Determine a static coefficient ratio according to the compensation coefficient range, and transform the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient;

[0008] Perform compression coding on the second dynamic compensation coefficient;

[0009] Store the compression-coded second dynamic compensation coefficient and the static coefficient ratio;

[0010] After the system is powered on, decode the compression-coded second dynamic compensation coefficient and scale the second dynamic compensation coefficient according to the static coefficient ratio to generate a first dynamic compensation coefficient; and

[0011] Perform image quality correction compensation on the near-eye display system using the first dynamic compensation coefficient.

[0012] In an embodiment of the present invention, it is stipulated that storing the compressed and encoded second dynamic compensation coefficient and the static coefficient includes:

[0013] Store the second dynamic compensation coefficient in a non-volatile memory, and store the static coefficient ratio in a register.

[0014] In an embodiment of the present invention, it is stipulated that performing image quality correction compensation on the near-eye display system using the first dynamic compensation coefficient includes:

[0015] Load the first dynamic compensation coefficient into a volatile memory; and

[0016] Transfer the first dynamic compensation coefficient from the volatile memory to the driving circuit of the display system to generate an image with corrected image quality.

[0017] In an embodiment of the present invention, it is stipulated that compressing and encoding the second dynamic compensation coefficient includes:

[0018] Compress and encode the second dynamic compensation coefficient using the compression encoding method of Demura.

[0019] In an embodiment of the present invention, it is stipulated that the compression encoding method of Demura includes: differential pulse code modulation, Huffman coding, and arithmetic coding.

[0020] In an embodiment of the present invention, it is stipulated that providing the first compensation coefficient includes:

[0021] Collect image data of the display module by an imaging device, and determine the brightness and chromaticity information of the sub-pixels of the image through a picture correction algorithm according to the image data; and

[0022] Determine the first dynamic compensation coefficient of the sub-pixel according to the brightness and chromaticity information of the sub-pixel.

[0023] In an embodiment of the present invention, it is stipulated that the imaging device includes: a camera, an imaging colorimeter, or a luminance meter.

[0024] In an embodiment of the present invention, it is stipulated that represent the first dynamic compensation coefficient as Coe src , represent the second dynamic compensation coefficient as Coe dst , represent the upper limit of the compensation coefficient range as Up ∈ [A, B], where the second dynamic compensation coefficient is scaled to [0, C] and stored in the non-volatile memory, where A, B, and C are positive numbers and A < B and C < B, expressed as the following formula:

[0025] Coe dst= Coe src × (C / Up).

[0026] In one embodiment of the present invention, it is stipulated that A = 2, B = 4, and C = 2.

[0027] The present invention also proposes a picture quality correction compensation control system for a near-eye display system, including:

[0028] A compensation coefficient module, which is configured to provide a first dynamic compensation coefficient;

[0029] A coefficient transformation module, which is configured to determine a static coefficient ratio according to a compensation coefficient range, and transform the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient;

[0030] A compression storage module, which is configured to perform compression encoding on the second dynamic compensation coefficient, and store the compressed and encoded second dynamic compensation coefficient and the static coefficient ratio;

[0031] A coefficient restoration module, which is configured to decode the compressed and encoded second dynamic compensation coefficient after the system is powered on and scale the second dynamic compensation coefficient according to the static coefficient ratio to generate a first dynamic compensation coefficient; and

[0032] A picture quality correction compensation module, which is configured to perform picture quality correction compensation on the near-eye display system using the first dynamic compensation coefficient.

[0033] The present invention proposes a system for improving the picture quality correction compensation range and accuracy of a near-eye display system, including:

[0034] A display module;

[0035] An imaging device, which is configured to acquire an image of the display module; and

[0036] A controller, which is configured to execute the steps according to the method.

[0037] In one embodiment of the present invention, it is stipulated that the near-eye display system includes: a virtual reality display, an augmented reality display, and smart glasses.

[0038] In one embodiment of the present invention, it is stipulated that the near-eye display module includes a micro light-emitting diode chip, and the micro light-emitting diode chip is used for light-emitting imaging.

[0039] In one embodiment of the present invention, it is stipulated that the micro light-emitting diode chip includes:

[0040] An integrated circuit driving backplane;

[0041] A light-emitting semiconductor module is arranged on the integrated circuit driving backplane. The light-emitting semiconductor module includes a light-emitting layer, a first epitaxial layer that is closer to the integrated circuit driving backplane than the light-emitting layer, and a second epitaxial layer that is farther from the integrated circuit driving backplane than the light-emitting layer;

[0042] An insulating layer is arranged on the light-emitting semiconductor module. The insulating layer has an opening at a position located on the second epitaxial layer;

[0043] A transparent conductive layer is arranged on the insulating layer, and the transparent conductive layer is electrically connected to the light-emitting semiconductor module through the opening; and

[0044] A microlens is arranged at a position above the light-emitting semiconductor module on the insulating layer and the transparent conductive layer.

[0045] In an embodiment of the present invention, it is stipulated that the micro light-emitting diode chip further includes:

[0046] A metal bonding layer is arranged between the integrated circuit driving backplane and the light-emitting semiconductor module to bond the integrated circuit driving backplane and the light-emitting semiconductor module together.

[0047] In an embodiment of the present invention, it is stipulated that the micro light-emitting diode chip further includes:

[0048] A first electrode is electrically connected to the integrated circuit backplane; and

[0049] A second electrode is arranged on the connection surface of the transparent conductive layer and is electrically connected to the light-emitting semiconductor module through the transparent conductive layer.

[0050] In an embodiment of the present invention, it is stipulated that a plurality of integrated circuit copper pillars are provided on the integrated circuit driving backplane, and the light-emitting semiconductor module is located above the integrated circuit copper pillars. The first electrode is electrically connected to the integrated circuit driving backplane through the integrated circuit copper pillars.

[0051] The present invention has at least the following beneficial effects: By dynamically adjusting the coding range and accuracy, the present invention can achieve more efficient storage and more accurate correction. While meeting the requirements of the maximum compensation coefficient range, it can significantly improve the accuracy and flexibility of the display system's image quality correction compensation, reduce waste of storage space, and enhance the user experience. The specific principle is as follows: The original compensation coefficient is scaled to a compensation coefficient within a smaller value range according to the value range of the original compensation coefficient. On the one hand, the data volume of the compensation coefficient with a smaller value range is also reduced, thereby saving storage space. On the other hand, the error caused by compression coding of the scaled compensation coefficient is also scaled to a smaller value, which can improve the compensation accuracy. Description of the Drawings

[0052] To further clarify the advantages and features possessed by and others in the embodiments of the present invention, a more specific description of the embodiments of the present invention will be presented with reference to the accompanying drawings. It can be understood that these drawings only depict typical embodiments of the present invention and will not be considered as a limitation of its scope. In the drawings, for clarity, the same or corresponding components will be denoted by the same or similar reference numerals.

[0053] Figure 1 A flowchart showing a method for image quality correction and compensation of a near-eye display system according to an embodiment of the present invention is shown.

[0054] Figure 2 A schematic diagram of an image quality correction and compensation system of a near-eye display system according to an embodiment of the present invention is shown. Detailed Description of the Invention

[0055] It should be noted that the components in the respective drawings may be exaggerated for illustration purposes and are not necessarily to scale correctly. In the respective drawings, the same or functionally identical components are provided with the same reference numerals.

[0056] In the present invention, unless otherwise specified, "arranged on", "arranged above", and "arranged over" do not exclude the situation where there is an intermediate object between the two. In addition, "arranged on or above" only represents the relative positional relationship between two components, and in certain cases, such as after reversing the product direction, it can also be converted to "arranged under or below", and vice versa.

[0057] In the present invention, the embodiments are only intended to illustrate the solutions of the present invention and should not be construed as restrictive.

[0058] In the present invention, unless otherwise specified, the quantifiers "a" and "one" do not exclude the scenario of multiple elements.

[0059] It should also be noted here that in the embodiments of the present invention, for clarity and simplicity, only a part of the components or assemblies may be shown, but those of ordinary skill in the art can understand that, under the teaching of the present invention, the required components or assemblies can be added according to the specific scenario needs. Additionally, unless otherwise stated, the features in different embodiments of the present invention can be combined with each other. For example, a certain feature in the second embodiment can be used to replace the corresponding or functionally identical or similar feature in the first embodiment, and the resulting embodiment also falls within the scope of disclosure or the scope of recording of the present application.

[0060] It should also be noted here that within the scope of the present invention, terms such as "identical", "equal", "equivalent" do not mean that the two values are absolutely equal, but allow for a certain reasonable error, that is, these terms also cover "substantially identical", "substantially equal", "substantially equivalent". By analogy, in the present invention, terms indicating direction such as "perpendicular to", "parallel to", etc. also cover the meanings of "substantially perpendicular to", "substantially parallel to".

[0061] In this application, the term "configured" means setting the shape, structure, material, and / or function of an object to achieve a desired technical effect, where "configured" includes various alternative technical means for achieving this technical effect, and these technical means become obvious under the teachings of this application.

[0062] In addition, the numbering of the steps of each method of the present invention does not limit the execution order of the method steps. Unless otherwise specified, the method steps can be executed in different orders.

[0063] The present invention will be further described below with reference to the accompanying drawings in conjunction with specific embodiments.

[0064] Figure 1 A flowchart showing a method for image quality correction and compensation of a near-eye display system according to an embodiment of the present invention is shown. As Figure 1 shown, the method includes the following steps:

[0065] Step 101: An imaging device acquires image data of a display module, and based on the image data, determines the brightness and chromaticity information of sub-pixels of the image through a demura algorithm.

[0066] Step 102: Determine a first dynamic compensation coefficient for the sub-pixels based on the brightness and chromaticity information of the sub-pixels.

[0067] Step 103: Determine a static coefficient ratio (Scale) according to the compensation coefficient range required during actual use, and transform the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient.

[0068] Step 104: Store the second dynamic compensation coefficient in a non-volatile memory (FLASH), store the static coefficient ratio in a register, and after the system is powered on, a drive circuit (IC) preprocesses the second dynamic compensation coefficient and loads it into a volatile memory (such as a static random access memory (SRAM) and a dynamic RAM (DRAM)).

[0069] The following specifically describes each step of the method.

[0070] In step 101, image data of the display module is acquired by an imaging device, and based on the image data, the luminance and chrominance information of the sub-pixels of the image is determined through a screen correction algorithm. In some embodiments, the imaging device includes a camera, an imaging colorimeter, or a luminance meter. In some embodiments, the luminance and chrominance information of each sub-pixel of the image is obtained through a screen correction algorithm.

[0071] In step 102, a first dynamic compensation coefficient of the sub-pixel is determined based on the luminance and chrominance information of the sub-pixel.

[0072] In step 103, a static coefficient ratio is determined according to a compensation coefficient range, and the first dynamic compensation coefficient is transformed according to the static coefficient ratio to generate a second dynamic compensation coefficient.

[0073] In some embodiments, a static coefficient ratio is determined according to the required compensation coefficient range during actual use, and the original first dynamic compensation coefficient is transformed according to the static coefficient ratio to generate a new second dynamic compensation coefficient.

[0074] In some embodiments, the first dynamic compensation coefficient is denoted as Coe src and the second dynamic compensation coefficient is denoted as Coe dst The upper limit of the compensation coefficient range is denoted as Up ∈ [A, B], where the second dynamic compensation coefficient is scaled to [0, C], where A, B, and C are positive numbers and A < B and C < B, expressed as the following formula:

[0075] Coe dst = Coe src × (C / Up).

[0076] In some embodiments, the second dynamic compensation coefficient is compression-encoded, and the second dynamic compensation coefficient is compression-encoded using the compression encoding method of Demura. The compression encoding method of Demura includes: differential pulse code modulation, Huffman coding, and arithmetic coding.

[0077] In step 104, the second dynamic compensation coefficient is stored in a non-volatile memory, the static coefficient ratio is stored in a register, and after the system is powered on, the second dynamic compensation coefficient is preprocessed by a driving circuit and loaded into a volatile memory. Further, the first dynamic compensation coefficient can be transmitted from the volatile memory to the driving circuit of the display system to generate a corrected image quality image.

[0078] In some embodiments, the first dynamic compensation coefficient is denoted as Coe src and the second dynamic compensation coefficient is denoted as Coe dst, the upper limit of the compensation coefficient range is expressed as Up ∈ [2, 4]. For example, Up = 2.5 can be set, and the second dynamic compensation coefficient can be expressed by the following formula:

[0079] Coe dst = Coe src ×(2 / Up) = Coe src ×0.8

[0080] wherein the second dynamic compensation coefficient is scaled to [0, 2] and stored in the non - volatile memory. When the driving circuit loads the second dynamic compensation coefficient, the second compensation coefficient is scaled, that is, it is pre - processed by multiplying by 1.25. When using the 2Q6 coding mode, the maximum error can be reduced from ±2 to ±1.25.

[0081] In contrast, the coefficient range corresponding to the 1Q7 coding mode is [0, 1.9921875], and the accuracy is 1 / 2^7, that is, 0.0078125; when 8 - bit display is used, the maximum error of the corresponding gray level is 0.0078125 * 256 / 2 = ±1; when 10 - bit display is used, the corresponding maximum error is 0.0078125 * 1024 / 2 = ±4. The coefficient range corresponding to the 2Q6 coding mode is [0, 3.9843750], and the accuracy is 1 / 2^6, that is, 0.015625; when 8 - bit display is used, the maximum error of the corresponding gray level is 0.015625 * 256 / 2 = ±2; when 10 - bit display is used, the corresponding maximum error of the gray level is 0.015625 * 1024 / 2 = ±8.

[0082] In addition, the method further includes decoding the compressed - encoded second dynamic compensation coefficient after the system is powered on and scaling the second dynamic compensation coefficient according to the static coefficient ratio to restore the first dynamic compensation coefficient, and performing image quality correction compensation on the near - eye display system using the first dynamic compensation coefficient.

[0083] In an embodiment of the present invention, an image quality correction compensation control system for a near - eye display system is further proposed, including:

[0084] A compensation coefficient module configured to provide a first dynamic compensation coefficient;

[0085] A coefficient transformation module configured to determine a static coefficient ratio according to the compensation coefficient range and transform the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient;

[0086] A compression storage module configured to perform compression encoding on the second dynamic compensation coefficient and store the compressed - encoded second dynamic compensation coefficient and the static coefficient ratio;

[0087] A coefficient restoration module, which is configured to decode the compressed and encoded second dynamic compensation coefficient after the system is powered on and scale the second dynamic compensation coefficient according to the static coefficient ratio to restore the first dynamic compensation coefficient; and

[0088] An image quality correction compensation module, which is configured to perform image quality correction compensation on the near-eye display system using the first dynamic compensation coefficient.

[0089] Figure 2 The schematic diagram of the image quality correction compensation system of the near-eye display system according to an embodiment of the present invention is shown. As Figure 2 shown, the system includes: an imaging device 201, a display module 202, a controller 203, an optional router 204, and an optional network 205.

[0090] In some embodiments, the imaging device 201 is configured to capture the image data of the display module 202, and determine the brightness and chromaticity information of the sub-pixels of the image according to the image data through a demura algorithm.

[0091] In some embodiments, the controller 203 can be in various forms, such as a microprocessor CPU, a microcontroller MCU, an application-specific integrated circuit AlSC, a field programmable gate array FPGA, a personal computer, etc. Here, the controller 203 is shown as a computer. The controller 203 is configured to perform the following actions, for example, through software or hardware programming:

[0092] Determine the first dynamic compensation coefficient of the sub-pixels according to the brightness and chromaticity information of the sub-pixels;

[0093] Determine the static coefficient ratio according to the compensation coefficient range, and transform the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient;

[0094] Store the second dynamic compensation coefficient in a non-volatile memory (FLASH), store the static coefficient ratio in a register, and after the system is powered on, the second dynamic compensation coefficient is preprocessed by a drive circuit (IC) and loaded into a volatile memory (SRAM).

[0095] In some embodiments, the router 204 is configured to connect the imaging device 201 to the network 205. Alternatively, in another application scenario, the router 204 is configured to implement communication between the imaging device 201 and the controller 203. For example, both the imaging device 201 and the controller 203 are connected to the router 204, and thus they can communicate directly by wire or wirelessly. The router 204 can be, for example, a wired router or a Wi-Fi router.

[0096] In some embodiments, the network 205 is configured to enable communication between the controller 203 and the router 204, and thus enable communication between the controller 203 and the imaging device 201. The network 205 can be, for example, the Internet, an intranet, etc. Optionally, the display module 202 is also connected to the network 205 or the router 204, so that the controller 203 can send a control signal to the display module 202 through the network 205 or the router 204 to light the corresponding first pixel, thereby realizing remote testing. Here, the display module 202 is connected to the router 204. Of course, the display module 202 can also be connected to a controller on-site to achieve direct control.

[0097] The near-eye display module has a micro light-emitting diode chip for emitting light. The size of the micro light-emitting diode chip does not exceed 1 centimeter, preferably does not exceed 20 micrometers. The micro light-emitting diode structure is formed in the micro light-emitting diode chip 102 in an array form, and the resolution is, for example, 720*480, 640*480, 1920*1080, 1280*720, 2K or 4K. The diameter of the micro light-emitting diode structure is at the nanometer level, for example, 20nm to 100nm.

[0098] The micro light-emitting diode chip includes an integrated circuit (IC) backplane and an active region disposed on the integrated circuit backplane. The active region includes a pixel array formed by micro light-emitting diodes, and the pixel array includes a plurality of micro light-emitting diode pixels. Each pixel can include one or more micro light-emitting diodes. That is, each micro light-emitting diode can form at least a part of the pixel element on the micro light-emitting diode chip. For example, each pixel can include a micro light-emitting diode of one color, and thus the active region of the micro light-emitting diode chip is a monochromatic pixel array. Or, each pixel can include two or more colors of micro light-emitting diodes, and thus the active region of the micro light-emitting diode chip is a color pixel array.

[0099] In some embodiments, the iC backplane can be electrically connected to each micro light-emitting diode in the micro light-emitting diode array through a separate metal interconnection. In some embodiments, each micro light-emitting diode can be individually electrically controlled by the IC backplane. In some embodiments, the IC backplane can be electrically connected to the electrodes of the micro light-emitting diode chip through metal interconnections. In some embodiments, a dielectric layer can be formed in the gap between the micro light-emitting diodes. In some embodiments, the dielectric layer can also be formed in the gap between the interconnections.

[0100] In some embodiments, the IC backplane is provided with a driving circuit array. Each driving circuit is a pixel driver. In some cases, the driving circuit is a thin-film transistor pixel driver or a silicon CMOS pixel driver. The driving circuits form individual pixel drivers to control the operation of individual multi-color Micro-LED pixels.

[0101] The micro light-emitting diode chip includes a plurality of micro light-emitting diode arrays, and each micro light-emitting diode array includes a plurality of micro light-emitting diodes. The driving method of the micro light-emitting diodes is, for example, passive matrix (PM) driving, in which the cathodes of all the micro light-emitting diodes in each array are commonly connected to the cathode line NL, and the micro light-emitting diodes with the same number in each array are respectively connected to the corresponding anode line PL. Thus, the on / off and light-emitting brightness of each light-emitting diode can be individually controlled by controlling the signals on the corresponding cathode line and anode line.

[0102] In some embodiments, each micro light-emitting diode in the micro light-emitting diode array may include a micron-level light-emitting mesa structure. In some embodiments, the micron-level light-emitting mesa structure may include, from bottom to top, a first-type epitaxial layer (or the first epitaxial layer), a light-emitting layer, and a second-type epitaxial layer (or the second epitaxial layer). That is to say, in the three-layer structure, the first-type epitaxial layer is closest to the IC backplane; the light-emitting layer is located above the first-type epitaxial layer and is farther from the IC backplane; the second-type epitaxial layer is located above the light-emitting layer and is the farthest from the IC backplane. In some embodiments, the light-emitting layer is formed by a plurality of stacked quantum well layers, especially superlattice-stacked quantum well layers. Preferably, the superlattice-stacked quantum well layers include multiple pairs of quantum well layers stacked with quantum barrier layers. In one embodiment of the present invention, the quantum well layer is an InGaN / GaN multiple quantum well layer or an InGaN / AlGaN multiple quantum well layer or an InGaAs / AlGaAs multiple quantum well layer. In one embodiment of the present invention, the light-emitting layer further includes an electron blocking layer, and the electron blocking layer is disposed on a first side of the light-emitting layer, and the first side refers to the side along which electrons migrate out of the light-emitting layer.

[0103] In some embodiments, the first type of epitaxial layer is a semiconductor material of a first conductivity type and includes a plurality of semiconductor layers. The main matrix material of the first type of epitaxial layer may be, but is not limited to, materials composed of Ga, N, As, P, In, Al, etc. In addition, the first type of epitaxial layer may include, from top to bottom, but is not limited to, a waveguide layer, a confinement layer, a transition layer, and a window layer; in addition, an ohmic contact layer may be formed below the window layer. In some embodiments, the second type of epitaxial layer is a semiconductor material of a second conductivity type and includes a plurality of semiconductor layers. The main matrix material of the second type of epitaxial layer may be, but is not limited to, materials composed of Ga, N, As, P, In, Al, etc. In addition, the first type of epitaxial layer may include, from top to bottom, but is not limited to, a confinement layer and a waveguide layer; in addition, in some embodiments, an ohmic contact layer may be formed on the confinement layer. In one embodiment of the present invention, the first type of epitaxial layer is an N-type GaN layer or an N-type AlGaN layer, and the second type of epitaxial layer is a P-type GaN layer or a P-type AlGaN layer. In another embodiment of the present invention, the first type of epitaxial layer may also be a P-type GaN layer or a P-type AlGaN layer, and the second type of epitaxial layer is an N-type GaN layer or an N-type AlGaN layer. In an embodiment of the present invention, the semiconductor light-emitting mesa 501 is in a stepped or trapezoidal shape. In some embodiments, the micron-scale light-emitting mesa structure can emit red light, blue light, green light, or light of any other color.

[0104] In some embodiments, a top conductive layer may be formed on the top surface of the micro light-emitting diode array. In some embodiments, the top conductive layer may be shared by all the micro light-emitting diodes in the micro light-emitting diode array.

[0105] In one embodiment of the present invention, the top conductive layer may be shared by all the micro light-emitting diodes in the micro light-emitting diode array. In one embodiment of the present invention, the top conductive layer is disposed above the micro light-emitting diode array and contacts and covers the top of each light-emitting mesa, and is in electrical contact with the second epitaxial layer of the light-emitting mesa to connect the second epitaxial layers of each semiconductor light-emitting mesa 1 in series, and it is a transparent conductive layer.

[0106] In one embodiment of the present invention, the micro light-emitting diode array further includes a passivation isolation layer. The passivation isolation layer coats the surface and sides of the light-emitting mesa, but exposes at least part of the surface of the second epitaxial layer, and the top conductive layer is disposed on the surface of the passivation isolation layer. In one embodiment of the present invention, the passivation isolation layer may be deposited with SiO2 by CVD or Al by ALD 2 O 3A film layer is formed to effectively reduce the chip leakage rate. In some embodiments of the present invention, the passivation isolation layer only covers the side surface of the light-emitting mesa, but does not cover the top surface of the light-emitting mesa, and the highest point of the passivation isolation layer is flush with the top surface of the light-emitting mesa. In these embodiments, the continuous top conductive layer covering the top of the light-emitting mesa is in a horizontal or substantially horizontal planar shape. In some embodiments of the present invention, the passivation isolation layer not only covers the side surface of the light-emitting mesa, but also covers the edge portion of the top surface of the light-emitting mesa, and thus there is a protrusion at the top edge of the light-emitting mesa, so that the continuous top conductive layer covering it also forms a protrusion at the top edge of the light-emitting mesa.

[0107] As described above, there are partitions between the pixel points formed by each light-emitting mesa, and a second electrode is provided at the partition, and the second electrode is provided on the surface of the top conductive layer. In one embodiment of the present invention, the second electrode is an annular reflective electrode, which is arranged around the light-emitting mesa, and is formed by magnetron sputtering or evaporation, and its material can be, for example, Al or an Al alloy metal as the sidewall reflective mirror surface, and the electrode stack metal can be metal materials such as Ni, Al, Ti, Ni, Pt, Au, etc. In one embodiment of the present invention, the second electrodes are connected to each other. In some embodiments of the present invention, a deep trench is provided at the partition between two adjacent light-emitting mesas, the deep trench penetrates through the micro light-emitting diode array, and the second electrode is provided at the deep trench. In some embodiments of the present invention, no deep trench is provided at the partition between two adjacent light-emitting mesas, but a passivation isolation layer and a top conductive layer are directly formed. Therefore, the surface of the top conductive layer between two adjacent light-emitting mesas is horizontal or substantially horizontal, the second electrode is formed here, and its morphological interface is trapezoidal or approximately trapezoidal, and the surface of the second electrode is not higher than the highest point of the continuous top conductive layer.

[0108] In one embodiment of the present invention, the micro light-emitting diode array is bonded to the driving backplane through a metal bonding layer and is electrically connected to the IC copper pillars on the driving backplane. In one embodiment of the present invention, the IC copper pillars include a first IC copper pillar and a second IC copper pillar, wherein the first IC copper pillar is electrically connected to the first epitaxial layer of the semiconductor light-emitting module one by one. The second IC copper pillar is electrically connected to the first electrode 6. In one embodiment of the present invention, the polarity of the first electrode is opposite to that of the second electrode. In one embodiment of the present invention, each semiconductor light-emitting module has a common first electrode. The first electrode may be, for example, a P electrode or an anode electrode, and the second electrode is an electrode with a polarity opposite to that of the first electrode 506, such as an N electrode or a cathode electrode. In one embodiment of the present invention, the first and second electrodes and their connecting components may be made of materials such as graphene, IT0, aluminum-doped zinc oxide (AZ0), or fluorine-doped tin oxide (FT0), or any combination of the above materials. In yet another embodiment of the present invention, the first and second electrodes and their connecting components may be made of a non-transparent or transparent conductive material, such as indium tin oxide (IT0).

[0109] In some embodiments, the light-emitting layer may include at least one quantum well layer. In some embodiments, the micro light-emitting diode array may include a single-layer micro light-emitting diode structure. In some embodiments, the micro light-emitting diode array may include a multi-layer vertically stacked micro light-emitting diode structure.

[0110] In some embodiments, the micro light-emitting diode array may include micro light-emitting diodes of one or more colors. In some embodiments, the pitch of the micro light-emitting diode array, i.e., the minimum center-to-center distance between the micro light-emitting diodes, may be between about 2 microns and about 50 microns. In some embodiments, the number of pixels on the micro light-emitting diode chip may be between several thousand and several million.

[0111] In some embodiments, a microlens is disposed above the micro light-emitting diode array, and the lateral dimension of the bottom of the microlens is larger than the lateral dimension of the light-emitting region of the micro light-emitting diode, or the lateral dimension of the bottom of the microlens may be smaller than or equal to the lateral dimension of the light-emitting region of the micro light-emitting diode.

[0112] In some embodiments, one microlens may cover one or more lensless micro light-emitting diodes. Multiple microlenses form a microlens array. The microlenses in the microlens array are generally the same. Examples of microlenses include spherical microlenses, aspherical microlenses, FresnaI (Fresnel) microlenses, and cylindrical microlenses. Each microlens in the microlens array of the micro light-emitting diode chip 102 may be the same or different in terms of shape, curvature, optical power, size, base, spacing, etc.

[0113] In some embodiments, the microlens may be made of various materials that are transparent to light of each wavelength emitted by the micro light-emitting diode. Exemplary transparent materials for the microlens include polymers and dielectric materials. In some embodiments, the dielectric material includes one or more materials such as silicon oxide, silicon nitride, silicon carbide, titanium oxide, zirconium oxide, aluminum oxide, and the like. In some embodiments, the microlens is made of a photoresist. In some embodiments, the microlens is directly deposited on the surface of the micro light-emitting diode by a chemical vapor deposition (CVD) technique.

[0114] Although the embodiments of the present invention have been described above, it should be understood that they are presented only as examples and not as limitations. It will be apparent to those skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the present invention. Therefore, the width and scope of the present invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should be defined only by the appended claims and their equivalents.

Claims

1. A method for image quality correction and compensation of a near-eye display system, characterized in that: The following steps are involved: providing a first motion compensation coefficient; determining a static coefficient ratio according to the compensation coefficient range, and transforming the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient; compressing and encoding the second motion compensation coefficient; storing the compressed and encoded second motion compensation coefficient and the static coefficient ratio; After the system is powered on, decoding the compressed and encoded second motion compensation coefficient and scaling the second motion compensation coefficient according to the static coefficient ratio to restore the first motion compensation coefficient; as well as The first motion compensation coefficient is used to perform image quality correction compensation on the near-eye display system.

2. The image quality correction and compensation method of the near-eye display system according to claim 1, characterized in that: Storing the compressed and encoded second motion compensation coefficient and the static coefficient comprises: The second dynamic compensation coefficient is stored in a non-volatile memory, and the static coefficient ratio is stored in a register.

3. The image quality correction and compensation method of the near-eye display system according to claim 1, characterized in that: Using the first motion compensation coefficient to perform image quality correction compensation on the near-eye display system includes: loading the first motion compensation coefficient into a volatile memory; and The first motion compensation coefficient is transmitted from the volatile memory to a driving circuit of the display system to generate an image with corrected image quality.

4. The image quality correction and compensation method of the near-eye display system according to claim 1, characterized in that: The compressing and encoding the second motion compensation coefficient comprises: The second motion compensation coefficient is compression-encoded using Demura's compression coding method.

5. The image quality correction and compensation method of the near-eye display system according to claim 4, characterized in that: Demura's compression coding methods include differential pulse code modulation, Huffman coding and arithmetic coding.

6. The image quality correction and compensation method of the near-eye display system according to claim 1, characterized in that: Providing a first compensation coefficient includes: The imaging device collects image data of the display module, and determines the brightness and chromaticity information of the sub-pixels of the image through a picture correction algorithm according to the image data; and A first motion compensation coefficient of the sub-pixel is determined according to the brightness and chromaticity information of the sub-pixel.

7. The image quality correction and compensation method of the near-eye display system according to claim 6, characterized in that: The imaging device includes: a camera, an imaging colorimeter or a brightness meter.

8. The image quality correction and compensation method of the near-eye display system according to claim 1, characterized in that: Represent the first dynamic compensation coefficient as Coe src and represent the second dynamic compensation coefficient as Coe dst , represent the upper limit of the compensation coefficient range as Up ∈ [A, B], where the second dynamic compensation coefficient is scaled to [0, C] and stored in the non-volatile memory, where A, B, and C are positive numbers and A < B and C < B, expressed as the following formula: Coe dst =Coe src ×(C / Up)。 9. The image quality correction and compensation method of the near-eye display system according to claim 8, characterized in that: A=2, B=4, C=2.

10. A picture quality correction and compensation control system for a near-eye display system, characterized in that: include: a compensation coefficient module configured to provide a first dynamic compensation coefficient; a coefficient transformation module configured to determine a static coefficient ratio according to a compensation coefficient range, and transform the first dynamic compensation coefficient according to the static coefficient ratio to generate a second dynamic compensation coefficient; A compression storage module, configured to compress and encode the second motion compensation coefficient, and store the compressed and encoded second motion compensation coefficient and the static coefficient ratio; A coefficient restoration module, configured to decode the compressed and encoded second motion compensation coefficient after the system is powered on and scale the second motion compensation coefficient according to the static coefficient ratio to restore the first motion compensation coefficient; as well as The image quality correction compensation module is configured to perform image quality correction compensation on the near-eye display system using the first motion compensation coefficient.

11. A near-eye display system image quality correction and compensation system, characterized in that: include: Display module; An imaging device configured to acquire an image of the display module; as well as A controller configured to perform the steps of the method according to any one of claims 1-9.

12. The image quality correction and compensation system of the near-eye display system according to claim 11, characterized in that: The near-eye display system includes: a virtual reality display, an augmented reality display, and smart glasses.

13. The image quality correction and compensation system of the near-eye display system according to claim 12, characterized in that: The near-eye display module includes a micro light emitting diode chip, and the micro light emitting diode chip is used for luminous imaging.

14. The image quality correction and compensation system of the near-eye display system according to claim 13, characterized in that: The micro light emitting diode chip comprises: Integrated circuit driving backplane; A light-emitting semiconductor module is arranged on the integrated circuit driving backplane, and comprises a light-emitting layer, a first epitaxial layer closer to the integrated circuit driving backplane relative to the light-emitting layer, and a second epitaxial layer farther from the integrated circuit driving backplane relative to the light-emitting layer; An insulating layer, which is arranged on the light-emitting semiconductor module, and the insulating layer is provided with an opening at a position located on the second epitaxial layer; a transparent conductive layer, which is arranged on the insulating layer, and the transparent conductive layer is electrically connected to the light-emitting semiconductor module through the opening; and The microlens is arranged on the insulating layer and the transparent conductive layer at a position above the light emitting semiconductor module.

15. The image quality correction and compensation system of the near-eye display system according to claim 14, characterized in that: The micro light emitting diode chip further comprises: A metal bonding layer is arranged between the integrated circuit driving backplane and the light emitting semiconductor module to bond the integrated circuit driving backplane and the light emitting semiconductor module together.

16. The image quality correction and compensation system of the near-eye display system according to claim 14, characterized in that: The micro light emitting diode chip further comprises: A first electrode electrically connected to the integrated circuit backplane; and The second electrode is arranged on the transparent conductive layer connection surface and is electrically connected to the light emitting semiconductor module through the transparent conductive layer.

17. The image quality correction and compensation system of the near-eye display system according to claim 16, characterized in that: The integrated circuit driving backplane is provided with a plurality of integrated circuit copper pillars, wherein the light emitting semiconductor module is located above the integrated circuit copper pillars, and the first electrode is electrically connected to the integrated circuit driving backplane through the integrated circuit copper pillars.

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