Display device

Abstract

An embodiment of the present invention relates to a display device comprising: a substrate; a barrier layer disposed on the substrate; and a low reflective film disposed below the barrier layer and including at least one metal element and oxygen, the oxygen content being in a range of 31.6 at% to 47.3 at%. According to the embodiment of the invention, reflection caused by external light can be reduced.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0180015, filed on December 12, 2023, and Korean Patent Application No. 10 - 2024 - 0183282, filed on December 11, 2024, which are incorporated herein by reference for all purposes as if fully set forth herein. Technical field

[0003] The present invention relates to a display device. Background art

[0004] With the development of the information society, the demand for display devices that display images in various forms is increasing. Among display devices, self - emissive light - emitting display devices have the advantages of being lightweight and thin because they do not require a separate backlight.

[0005] In this case, a light - emitting display device may require a separate structure to prevent reflection of external light. Therefore, due to the addition of a separate structure, the manufacturing cost of the light - emitting display device may increase. In addition, since an additional process is required to equip the light - emitting display device with a separate structure, the manufacturing process of the light - emitting display device may become complex. Furthermore, since the thickness of the light - emitting display device may increase due to the additional structure, there may be a problem of not meeting the user's demand for reducing the thickness of the light - emitting display device.

[0006] In addition, the more external light is reflected by the display device, the more the images of objects outside the display device are reflected onto the display device. Therefore, there may be a problem that users feel uncomfortable due to poor reflection color. Summary of the invention

[0007] Embodiments of the present invention may provide a display device capable of reducing reflected external light.

[0008] Embodiments of the present invention may provide a display device capable of improving reflection color.

[0009] Embodiments of the present invention may provide a display device including: a substrate; a blocking layer disposed on the substrate; and a low - reflection film disposed under the blocking layer and containing a metal element and oxygen, wherein the content of oxygen is in the range of 31.6 at% to 47.3 at%.

[0010] Embodiments of the present invention may provide a display device including: a substrate; a first material layer disposed on the substrate, the first material layer being formed of an opaque conductive material; and a second material layer disposed under the first material layer and containing a metal element and oxygen, wherein the content of oxygen contained in the second material layer is in the range of 31.6 at% to 47.3 at%.

[0011] Embodiments of the present invention may provide a display device, including: a substrate; a barrier layer disposed on the substrate; a transistor disposed on the barrier layer and including a source electrode, a drain electrode, and a gate electrode; and a low-reflection film disposed under at least one of the source electrode, the drain electrode, and the gate electrode and under the barrier layer and containing a metal element and oxygen, wherein the content of oxygen is in the range of 31.6 at% to 47.3 at%.

[0012] Embodiments of the present invention may provide a display device, including: a substrate; a barrier layer disposed on the substrate; and a low-reflection film disposed under the barrier layer and containing at least one metal element and oxygen, wherein the content of oxygen is in the range of 29 at% to 38 at%.

[0013] Embodiments of the present invention may provide a display device, including: a substrate; a barrier layer disposed on the substrate; a transistor disposed on the barrier layer and including a source electrode, a drain electrode, and a gate electrode; and a low-reflection film disposed under at least one of the source electrode, the drain electrode, and the gate electrode and under the barrier layer and containing at least one metal element and oxygen, wherein the content of oxygen is in the range of 29 at% to 38 at%.

[0014] According to an embodiment of the present invention, a display device capable of reducing reflected external light may be provided.

[0015] According to an embodiment of the present invention, a display device capable of improving the reflected color may be provided.

[0016] According to an embodiment of the present invention, a display device capable of reducing reflected external light may be provided, so that low power consumption can be achieved through the effective operation of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 An example of the structure of a display device according to an embodiment of the present invention and the circuit structure included in a sub-pixel is shown.

[0018] Figure 2 An example of the cross-sectional structure of a conventional display device is shown.

[0019] Figure 3 is Figure 2 an enlarged view of part A.

[0020] Figure 4 An example of the cross-sectional structure of a display device according to an embodiment of the present invention is shown.

[0021] Figure 5 is Figure 4 an enlarged view of part B.

[0022] Figure 6It is a schematic diagram showing the upper limit of the component range of a partial structure included in a display device according to an embodiment of the present invention.

[0023] Figure 7 It is a schematic diagram showing the lower limit of the component range of a partial structure included in a display device according to an embodiment of the present invention.

[0024] Figure 8A and Figure 8B It shows the change in the optical characteristics of a display device after modifying the structure included in the display device according to an embodiment of the present invention.

[0025] Figures 9 to 11 It shows other examples of the cross-sectional structure of a display device according to an embodiment of the present invention.

[0026] Figure 12 is Figure 11 an enlarged view of part C of

[0027] Figure 13 It shows Figure 11 the wavelength-dependent optical characteristics of the display device shown. Detailed Description

[0028] In the following description of examples or embodiments of the present invention, reference will be made to the drawings that illustrate specific examples or embodiments that can be implemented. Even when the same or similar components are shown in different drawings, the same reference numerals and symbols can be used to represent the same or similar components. Further, in the following description of examples or embodiments of the present invention, when it is determined that the description of well-known functions and components may make the subject matter in some embodiments of the present invention less clear, the detailed description of the well-known functions and components incorporated herein will be omitted. Terms such as "including", "having", "containing", "constituting", "comprising", and "formed of" as used herein are generally intended to allow the addition of other components, unless these terms are used together with "only". In this document, the singular form is intended to include the plural form, unless the context clearly indicates otherwise.

[0029] Terms such as "first", "second", "A", "B", "(A)", or "(B)" may be used herein to describe elements of the present invention. Each of these terms does not define the nature, order, sequence, or quantity, etc. of the element, but is only used to distinguish the corresponding element from other elements.

[0030] When referring to the first element being "connected or coupled" or "contacting or overlapping" the second element, it should be interpreted that not only can the first element be "directly connected or coupled" or "directly contacting or overlapping" the second element, but also a third element can be "inserted" between the first and second elements, or the first and second elements can be "connected or coupled", "contacting or overlapping" etc. with each other via a fourth element. Here, the second element can be at least one of two or more elements that are "connected or coupled", "contacting or overlapping" with each other.

[0031] When using time-related terms such as "after", "subsequently", "next", "before", etc. to describe the processing or operation of an element or configuration, or the process or steps in an operation, processing, manufacturing method, these terms can be used to describe non-continuous or non-sequential processing or operations, unless used together with the terms "directly" or "immediately".

[0032] In addition, when referring to any size, relative magnitude, etc., the numerical value or corresponding information of an element or feature (e.g., level, range, etc.) should be considered to include the tolerance or error range that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if the relevant description is not specifically stated. Furthermore, the term "can" fully encompasses all the meanings of the term "be able to".

[0033] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

[0034] Figure 1 An example of the structure of a display device according to an embodiment of the present invention and the circuit structure included in a sub-pixel is shown.

[0035] Referring to Figure 1 , a plurality of sub-pixels SP can be provided in the display area of the display device 100.

[0036] Each of the plurality of sub-pixels SP can include a light-emitting device ED and a sub-pixel circuit unit configured to drive the light-emitting device ED.

[0037] The sub-pixel circuit unit can include a driving transistor T1 for driving the light-emitting device ED, a scanning transistor T2 for transmitting a data voltage VDATA to a first node N1 of the driving transistor T1, and a storage capacitor Cst for maintaining a constant voltage during one frame period.

[0038] The driving transistor T1 may include a first node N1 to which a data voltage is applied, a second node N2 electrically connected to the light-emitting device ED, and a third node N3 to which a driving voltage VDD from the driving voltage line DVL is applied. In the driving transistor T1, the first node N1 may be a gate node, the second node N2 may be a source node or a drain node, and the third node N3 may be a drain node or a source node. Hereinafter, for the sake of explanation, as an example, the case where the first node N1 in the driving transistor T1 is a gate node, the second node N2 is a source node, and the third node N3 is a drain node is shown.

[0039] The light-emitting device ED may include an anode 161, an intermediate layer 162, and a cathode 163. The anode 161 may be a pixel electrode provided in each sub-pixel SP and may be electrically connected to the second node N2 of the driving transistor T1 of each sub-pixel SP. The cathode 163 may be a common electrode commonly provided in a plurality of sub-pixels SP, and a reference voltage VSS may be applied thereto.

[0040] Alternatively, the anode 161 may be a common electrode and the cathode 163 may be a pixel electrode. Hereinafter, for the sake of explanation, it is assumed that the anode 161 is a pixel electrode and the cathode 163 is a common electrode.

[0041] The light-emitting device ED may be an organic light-emitting diode (OLED), an inorganic light-emitting diode, or a quantum dot light-emitting device. In the case where the light-emitting device ED is an organic light-emitting diode, the intermediate layer 162 in the light-emitting device ED may include an organic light-emitting layer containing an organic material.

[0042] The scanning transistor T2 may be controlled to be turned on and off by a scanning signal SCAN, which is a gate signal applied through the gate line GL, and the scanning transistor T2 may be electrically connected between the first node N1 of the driving transistor T1 and the data line DL.

[0043] The storage capacitor Cst may be electrically connected between the first node N1 and the second node N2 of the driving transistor T1.

[0044] The sub-pixel circuit unit may also have a 2T1C structure including two transistors T1, T2, and one capacitor Cst, and sometimes may further include one or more transistors, or may further include one or more capacitors.

[0045] The storage capacitor Cst may be an external capacitor intentionally designed outside the driving transistor T1, rather than a parasitic capacitor (e.g., Cgs, Cgd), that is, an internal capacitor existing between the first node N1 and the second node N2 of the driving transistor T1. Both the driving transistor T1 and the scanning transistor T2 may be n-type transistors or p-type transistors.

[0046] Circuit elements within each sub-pixel, particularly the light-emitting device ED implemented using an organic light-emitting diode OLED containing organic materials, may be vulnerable to external moisture or oxygen. Therefore, a encapsulation layer 180 may be provided on the display panel 110 to prevent oxygen from penetrating into the circuit elements (particularly the light-emitting device ED). The encapsulation layer 180 may be provided to cover the light-emitting device ED.

[0047] Figure 2 An example of a cross-sectional structure of a conventional display device is shown. Figure 3 is Figure 2 an enlarged view of part A of

[0048] Reference Figure 2 , the display device 100 may include a substrate 120.

[0049] The substrate 120 can be used to support various components of the display device 100. The substrate 120 may be made of a glass or plastic material.

[0050] In the case where the display device 100 is bottom-emitting, the substrate 120 may be made of a transparent material such as glass to emit the emitted light to the outside of the display device 100.

[0051] A buffer layer 130, a barrier layer 133, and a wiring electrode 134 for wiring may be provided on the substrate 120.

[0052] The buffer layer 130 may be provided on the entire surface of the substrate 120.

[0053] The buffer layer 130 can improve the adhesion between the layer formed on the buffer layer and the substrate 120, and can be used to block various defects, such as alkaline components leaking from the substrate 120.

[0054] The buffer layer 130 may include a first buffer layer 131 and a second buffer layer 132 provided on the first buffer layer 131. The first buffer layer 131 and the second buffer layer 132 may be made of silicon nitride (SiNx) or silicon oxide (SiOx).

[0055] The barrier layer 133 and the wiring electrode 134 may be provided between the substrate 120 and the first buffer layer 131. That is, the first buffer layer 131 may be provided to cover the barrier layer 133 and the wiring electrode 134.

[0056] The barrier layer 133 may be provided under the driving transistor T1. The area of the barrier layer 133 may be larger than the area of the semiconductor pattern 141, which will be described below.

[0057] The blocking layer 133 can prevent failures of the semiconductor pattern 141 that may occur when light incident from the outside of the display device 100 irradiates the semiconductor pattern 141.

[0058] The blocking layer 133 can be set using an opaque conductive material to block light incident from the outside of the display device 100. Alternatively, a metal with a low reflectivity can be further provided under the blocking layer 133 to block light incident from the outside. For example, as Figure 2 shown, the low-reflection metal layer 200 can be provided under the blocking layer 133 to block light incident from the outside. The low-reflection metal layer 200 can be formed of a single layer or multiple layers of any one of molybdenum (Mo), titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto.

[0059] If the low-reflection metal layer 200 is provided, part of the light incident on the display device 100 can be reflected by the low-reflection metal layer 200 and guided back to the outside.

[0060] The wiring electrode 134 can include a capacitor electrode and can include electrodes for various wirings (e.g., wirings connected to data lines). The wiring electrode 134 can be formed of the same material as the blocking layer 133. Additionally, the low-reflection metal layer 200 can be provided under the wiring electrode 134. Therefore, as Figure 2 shown, part of the light incident on the display device 100 can be reflected by the wiring electrode 134 and guided back to the outside.

[0061] In addition to the blocking layer 133 and the wiring electrode 134, the low-reflection metal layer 200 can also be provided under the source 143, drain 144, and gate 145 of the driving transistor T1, which will be described below. Additionally, the low-reflection metal layer 200 can also be provided under a metal with a high reflectivity located inside the display device 100. All the low-reflection metal layers 200 can be made of the same material layer M1.

[0062] The color filter 135, the driving transistor T1, and the insulating layer 140 can be provided on the buffer layer 130.

[0063] In the case where the display device 100 is a bottom-emission type, the color filter 135 can be located under the light-emitting device ED, as Figure 2 shown. Additionally, the color filter 135 can be provided to overlap with the light-emitting region of the light-emitting device ED.

[0064] The semiconductor pattern 141 of the driving transistor T1 may be disposed on the buffer layer 130. The semiconductor pattern 141 may include a channel region in which a channel through which electrons or holes move is formed. A source region and a drain region, that is, conductive regions formed by a doping process, may exist on both sides of the channel region.

[0065] The interlayer insulating layer 142 may be disposed in some regions on the semiconductor pattern 141. The source electrode 143 and the drain electrode 144 may be disposed on the interlayer insulating layer 142. The source electrode 143 and the drain electrode 144 may be electrically connected to the conductive source region and drain region in the semiconductor pattern 141, respectively. In addition, the drain electrode 144 may be electrically connected to the barrier layer 133 through a contact hole.

[0066] The source electrode 143 and the drain electrode 144 may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof, but is not limited thereto.

[0067] The gate electrode 145 may be disposed in some regions on the interlayer insulating layer 142. The interlayer insulating layer 142 under the gate electrode 145 may also be referred to as a gate insulating layer. The gate electrode 145 may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof, but is not limited thereto.

[0068] The insulating layer 140 may be disposed to cover the gate electrode 145, the source electrode 143, and the drain electrode 144.

[0069] The insulating layer 140 and the interlayer insulating layer 142 may be formed of an insulating inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx).

[0070] The planarization layer 150 may be disposed on the insulating layer 140. The planarization layer 150 may be disposed to cover the driving transistor T1. The planarization layer 150 may protect the transistor disposed thereunder and may reduce or planarize the steps caused by various patterns.

[0071] The anode 161 may be disposed on the planarization layer 150.

[0072] If the display device 100 is a bottom emission type, the anode 161 may be disposed using a transparent conductive material capable of transmitting light. For example, the anode 161 may be formed of at least one of indium tin oxide (ITO) and indium zinc oxide (IZO), but is not limited thereto.

[0073] The intermediate layer 162 and the bank layer 170 may be disposed on the anode 161.

[0074] The intermediate layer 162 may include one of a red organic light-emitting layer, a green organic light-emitting layer, a blue organic light-emitting layer, and a white organic light-emitting layer to emit light of a specific color.

[0075] In addition, in addition to the organic light-emitting layer, the intermediate layer 162 may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, but is not limited thereto.

[0076] The bank layer 170 may have bank holes for exposing the anode 161 corresponding to the light-emitting region.

[0077] The bank layer 170 may be made of at least one of an inorganic insulating material (such as silicon nitride (SiNx) or silicon oxide (SiOx)) or an organic insulating material (such as BCB (benzocyclobutene), acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin), but is not limited thereto. Additionally, the bank layer 170 may be made of a transparent material.

[0078] The cathode 163 may be disposed on the intermediate layer 162.

[0079] In the case where the display device 100 is a bottom-emission type, the cathode 163 may be a reflective electrode that reflects light, and may be provided using an opaque conductive material. For example, the cathode 163 may be formed of at least one of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof.

[0080] The encapsulation layer 180 may be disposed on the cathode 163.

[0081] The encapsulation layer 180 may protect the light-emitting device ED from external moisture, oxygen, or impurities.

[0082] The encapsulation layer 180 may include a first encapsulation layer 181, a second encapsulation layer 182 disposed on the first encapsulation layer 181, and a third encapsulation layer 183 disposed on the second encapsulation layer 182.

[0083] The first encapsulation layer 181 may be made of an inorganic material such as silicon nitride (SiNx), but is not limited thereto. The second encapsulation layer 182 may be made of calcium oxide (CaO) capable of absorbing moisture, but is not limited thereto. The third encapsulation layer 183 may be made of a metal, but is not limited thereto.

[0084] As described above with reference to Figure 2 As described, the conventional display device 100 may include components made of an opaque conductive material, namely, the barrier layer 133, the wiring electrode 134, and the source 143, drain 144, gate 145, etc. of the driving transistor T1.

[0085] Since the display device 100 includes a component made of an opaque conductive material, reflected external light may increase, which may cause a problem of interfering with the user's field of view. To solve this problem, a low-reflective metal layer 200 may be provided under the component made of the opaque conductive material as described above.

[0086] In the following, reference will be made to Figure 3 An example in which the low-reflective metal layer 200 is disposed under the barrier layer 133 is described in detail.

[0087] refer to Figure 3 The barrier layer 133 may be, for example, copper (Cu). The low-reflective metal layer 200 may be disposed under the barrier layer 133. For example, the low-reflective metal layer 200 may be MoTi.

[0088] The low-reflection metal layer 200 may have a thickness of 100 Å. When the thickness of the low-reflection metal layer 200 is 100 Å, the ratio of light reflected from the surface of the low-reflection metal layer 200 and guided back to the outside, that is, the barrier reflectivity is 36%.

[0089] In addition, the unit film reflectivity of the product unit of the entire display device 100 having the low-reflection metal layer 200 is 36.5%.

[0090] That is, even if a low-reflection metal layer 200 is provided under the barrier layer 133, the unit film reflectivity of the product unit is more than 36% as described in the above example, and thus may interfere with the user's field of view. In order to maintain the reflective visibility without interfering with the user's field of view, it is critical to reduce the unit film reflectivity of the product unit to less than 36%. The unit film reflectivity of the product unit can also be expressed as external light reflectivity.

[0091] In addition, since the reflectivity of the unit film of the product unit is high, the image of the object outside the display device may be reflected in the display device, resulting in poor reflection color.

[0092] Hereinafter, a method for solving the above-mentioned problems will be described with reference to an embodiment of the present invention.

[0093] Figure 4 An example of a cross-sectional structure of a display device according to an embodiment of the present invention is shown. Figure 5 yes Figure 4 Magnified view of part B.

[0094] In addition to using the low-reflection film 400 instead of the low-reflection metal layer 200, Figure 4 and Figure 2 The display devices in are basically the same, so repeated descriptions will be omitted.

[0095] The display device 100 according to the embodiment of the present invention may further include a low-reflection film 400 .

[0096] Refer to Figure 4 ,the low-reflection film 400 can be disposed under the barrier layer 133 and the wiring electrode 134. The low-reflection film 400 can be disposed to cover the lower surfaces of the barrier layer 133 and the wiring electrode 134. That is to say, the area of the lower surface of the low-reflection film 400 can be equal to or larger than the area of the lower surface of the barrier layer 133 or the wiring electrode 134.

[0097] The low-reflection film 400 can be disposed between the barrier layer 133 and the substrate 120. Specifically, the upper surface of the low-reflection film 400 can contact the lower surface of the barrier layer 133, and the lower surface of the low-reflection film 400 can contact the upper surface of the substrate 120.

[0098] The low-reflection film 400 can be disposed between the wiring electrode 134 and the substrate 120. Specifically, the upper surface of the low-reflection film 400 can contact the lower surface of the wiring electrode 134, and the lower surface of the low-reflection film 400 can contact the upper surface of the substrate 120.

[0099] The low-reflection film 400 can be made of a material that transmits part of the incident light.

[0100] Specifically, the low-reflection film 400 can contain a metal element and oxygen.

[0101] The metal element can include at least one of molybdenum (Mo), titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), neodymium (Nd), tungsten (W), tantalum, yttrium (Y), zinc (Zn), barium (Ba), gallium (Ga), indium (In), magnesium (Mg), tin (Sn), and niobium (Nb).

[0102] In addition, the low-reflection film 400 can include carbon atoms. The carbon atoms can be impurities generated during the manufacturing process of the low-reflection film 400, and when the low-reflection film 400 is exposed to air or contacts with organic substances, to a certain extent, the low-reflection film 400 contains carbon atoms.

[0103] The low-reflection film 400 can be formed by a sputtering process. The sputtering target can include metals and oxides.

[0104] The sputtering target for forming the low-reflection film 400 can include at least one metal of molybdenum (Mo), titanium (Ti), nickel (Ni), tungsten (W), zinc (Zn), yttrium (Y), and niobium (Nb), and can include titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), molybdenum oxide (MoOx), niobium oxide (Nb 2 O 5 ), yttrium oxide (Y 2 O3 ), silicon oxide (SiO 2 ), zinc oxide (ZnO), barium oxide (BaO), gallium zinc oxide (GZO), indium oxide (In 2 O 3 ), magnesium oxide (MgO), tungsten trioxide (WO 3 ), tin oxide (SnO 2 ), and at least one oxide selected from zinc tin oxide (ZTO).

[0105] For example, the low-reflection film 400 may be formed of a sputtering target of molybdenum (Mo) and titanium dioxide (TiO 2 ). In this case, the composition ratio of the low-reflection film 400 may be 41.6 at% of molybdenum (Mo), 17.9 at% of titanium (Ti), 35.4 at% of oxygen, and 5.1 at% of carbon. However, the present invention is not limited thereto.

[0106] Since the low-reflection film 400 is formed of a sputtering target of a metal and an oxide, that is, since the low-reflection film 400 contains oxygen atoms, part of the light incident on the low-reflection film 400 can be transmitted.

[0107] Specifically, referring to Figure 5 , the light incident from the outside of the display device 100 through the substrate 120 can be partially reflected on the surface of the low-reflection film 400, and part of the light can be transmitted through the low-reflection film 400.

[0108] That is, since the low-reflection film 400 contains some metal elements as an opaque conductive material, the low-reflection film 400 can reflect part of the incident light, as Figure 5 shown. In addition, since the low-reflection film 400 contains some oxygen, part of the incident light can pass through the low-reflection film 400. In this case, the amount of light passing through the low-reflection film 400 can vary according to the content of oxygen contained in the low-reflection film 400. That is, the transmittance of the low-reflection film 400 can vary according to the content of oxygen contained in the low-reflection film 400.

[0109] The light passing through the low-reflection film 400 can be reflected by the blocking layer 133. Since the blocking layer 133 is made of the opaque conductive material as described above, most of the light incident on the blocking layer 133 can be reflected.

[0110] The light reflected from the blocking layer 133 can pass through the low-reflection film 400 and the substrate 120, and can travel to the outside of the display device 100.

[0111] In this case, as Figure 5 shown, the light reflected from the blocking layer 133 and passing through the low-reflection film 400 can interfere destructively with the light reflected from the low-reflection film 400.

[0112] When the light reflected from the barrier layer 133 and passing through the low-reflection film 400 interferes destructively with the light reflected from the low-reflection film 400, the amount of light reflected from the barrier layer 133 can be reduced. That is, when the low-reflection film 400 is provided, part of the light reflected from the surface of the barrier layer 133 may disappear due to destructive interference. Therefore, compared with the case where the low-reflection film 400 is not provided or the low-reflection metal layer 200 is provided, the barrier layer reflectance can be reduced.

[0113] In addition, by reducing the barrier layer reflectance, the problem of poor reflected color caused by partial reflection of an object image outside the display device 100 in the display device 100 can be improved.

[0114] As described above, in order to reduce the barrier layer reflectance, it is necessary to maximize the amount of light that interferes destructively due to the low-reflection film 400.

[0115] Here, the degree of destructive interference of light can vary according to the refractive index of the low-reflection film 400. Since the refractive index of the low-reflection film 400 can vary according to the oxygen content included in the low-reflection film 400, it is necessary to appropriately adjust the oxygen content included in the low-reflection film 400.

[0116] If the oxygen content included in the low-reflection film 400 is too high, it may cause wiring defects in the barrier layer 133 and the like.

[0117] Figure 6 It is a schematic diagram showing the upper limit of the component range of a partial structure included in a display device according to an embodiment of the present invention.

[0118] Reference Figure 6 , shows the number of impurities that may occur according to the production amount (or sputtering deposition amount) of the low-reflection film 400 when the low-reflection film 400 is made of a sputtering target having different oxide contents.

[0119] Here, the impurity refers to a material that partially detaches from the oxide target as the film density and adhesion of the oxide target decrease in the sputtering process of forming the low-reflection film 400. In the sputtering process, some impurities may fall on the substrate 120 or the low-reflection film 400. If impurities fall, the wiring or electrodes to be deposited later may not be deposited properly, which may cause wiring defects.

[0120] To prevent wiring defects, it is necessary to minimize the number of impurities, and it is desirable that the number of impurities does not exceed 60.

[0121] Refer to Figure 6 , the oxide included in the sputtering target is titanium oxide (TiO 2In the case of [[ID=]], if the oxide content is the same as that of Component 1 (20 wt%), Component 2 (25 wt%), Component 3 (35 wt%), and Component 4 (45 wt%), it can be determined that even if the production volume of the low-reflection film 400 increases, the number of impurities remains below 60. However, when the oxide content is the same as that of Component 5 (55 wt%), the number of impurities may be greater than 60, and the number of impurities may increase as the production volume of the low-reflection film 400 increases.

[0122] Therefore, in order to prevent wiring defects caused by the generation of impurities, the oxide content of the sputtering target can be preferably 45 wt% or less. Correspondingly, the oxygen content of the low-reflection film 400 can be preferably 47.3 at% or less.

[0123] In addition, if the oxygen content included in the low-reflection film 400 is too low, the barrier layer reflectance may increase due to the high content of metal elements as opaque conductive materials.

[0124] Figure 7 is a diagram showing the lower limit of the composition range of a partial structure included in a display device according to an embodiment of the present invention.

[0125] Referring to Figure 7 , it can be seen that when the oxygen content is less than 31.6 at%, the barrier layer reflectance increases to more than 10%.

[0126] Therefore, in order to prevent the increase in the barrier layer reflectance, it is preferable that the oxygen content of the low-reflection film 400 is 31.6 at% or more.

[0127] In summary, the oxygen content included in the low-reflection film 400 may need to be at least 31.6 at% or more to prevent the barrier layer reflectance from becoming too high, and may need to be less than 47.3 at% to prevent wiring defects caused by impurities generated in the sputtering process. In addition, since the low-reflection film 400 is formed using the above-mentioned metal and oxide as a sputtering target, the proportion of the oxygen-containing oxide target needs to be set within the range of 25 wt% to 45 wt% of the total target to meet the above conditions.

[0128] The specific composition ratio within the composition range of the low-reflection film 400 can be the same as the composition ratio listed in Table 1 below.

[0129] [Table 1]

[0130]

[0131] Table 1 shows examples of the composition ratios within the optimal composition ratio range of the low-reflection film 400 described with reference to Figure 7 and the corresponding barrier layer reflectances.

[0132] As described above, the composition of the low-reflection film 400 can vary according to the weight composition ratio (wt%) of the sputtering target. Additionally, the ratio between the metal elements contained in the low-reflection film 400 can also vary according to the weight composition ratio (wt%) of the sputtering target. As the weight composition ratio of the metal (molybdenum) contained in the sputtering target increases, the ratio of molybdenum in the low-reflection film 400 increases, and as the weight composition ratio of the oxide (titanium dioxide) contained in the sputtering target increases, the ratio of titanium contained in the low-reflection film 400 increases.

[0133] Additionally, referring to Table 1 above, when the oxygen content is 31.6 at%, molybdenum can have a ratio of 47.5 at%, and titanium can have a ratio of 15.9 at%. In this case, the ratio of molybdenum, titanium, and oxygen is 3:1:2.

[0134] When the oxygen content is 35.4 at%, molybdenum can have a ratio of 41.6 at%, and titanium can have a ratio of 17.9 at%. In this case, the ratio of molybdenum, titanium, and oxygen is 2.3:1:2.

[0135] When the oxygen content is 42.0 at%, molybdenum can have a ratio of 31.3 at%, and titanium can have a ratio of 21.1 at%. In this case, the ratio of molybdenum, titanium, and oxygen is 1.5:1:2.

[0136] When the oxygen content is 47.3 at%, molybdenum can have a ratio of 23.8 at%, and titanium can have a ratio of 23.6 at%. In this case, the ratio of molybdenum, titanium, and oxygen is 1:1:2.

[0137] That is to say, in each case, the atomic weight ratio of molybdenum and titanium in the low-reflection film 400 can be a value that makes the reflectivity of the barrier layer within 10%. Additionally, when the thickness of the low-reflection film 400 is 270 Å and the oxygen content is 42 at%, the reflectivity of the barrier layer is the lowest. In this case, the reflectivity of the barrier layer is 4.5%, and the composition ratio of the low-reflection film 400 can be 31.3 at% molybdenum (Mo), 21.1 at% titanium (Ti), 42.0 at% oxygen, and 5.6 at% carbon.

[0138] According to the type of metal contained in the low-reflection film 400, the oxygen content described with reference to Figure 6 、 Figure 7 and Table 1 can vary.

[0139] In one embodiment, the low-reflection film 400 may include tungsten (W), zinc (Zn), and yttrium (Y). If the low-reflection film 400 includes tungsten (W), zinc (Zn), and yttrium (Y), the oxygen content included in the low-reflection film 400 may be at least 29 at% or higher to prevent the barrier layer reflectance from becoming too high. In addition, the oxygen content included in the low-reflection film 400 may be 38 at% or lower to prevent wiring defects caused by foreign substances generated during the sputtering process.

[0140] The specific composition ratio ranges of the materials included in the low-reflection film 400 may be as shown in Table 2 below.

[0141] [Table 2]

[0142]

[0143] Table 2 is a table showing the atomic weight ratios of the remaining elements other than impurities such as carbon included in the low-reflection film 400 and the barrier layer reflectance according to the atomic weight ratios.

[0144] Referring to Table 2, each of Component 1, Component 2, and Component 3 may be an average value of several component values. Component 1 may be the average value of the components of the low-reflection film 400 having a barrier layer reflectance of 8.1%. Component 2 may be the average value of the components of the low-reflection film 400 having a barrier layer reflectance of 6.2%. Component 3 may be the average value of the components of the low-reflection film 400 having a barrier layer reflectance of 4.6%.

[0145] For example, Component 1 may be the average component of a plurality of components including a component having an oxygen content of about 31.4 at% (e.g., 29 at%) in the low-reflection film 400 and a barrier layer reflectance of 8.1%. In one embodiment, the ratio of tungsten, zinc, yttrium, and oxygen in the low-reflection film 400 in Component 1 may be 7.5:1:2:5.

[0146] For example, Component 2 may be the average component of a plurality of components including a component having an oxygen content of about 33.3 at% in the low-reflection film 400 and a barrier layer reflectance of 6.2%. In one embodiment, the ratio of tungsten, zinc, yttrium, and oxygen in the low-reflection film 400 in Component 2 may be 8:1:3:6.

[0147] For example, Component 3 may be the average component of a plurality of components including a component having an oxygen content of about 35.8 at% (e.g., 38 at%) in the low-reflection film 400 and a barrier layer reflectance of 4.6%. In one embodiment, the ratio of tungsten, zinc, yttrium, and oxygen in the low-reflection film 400 in Component 3 may be 32:1:17:28.

[0148] In one embodiment, the oxygen content in the low-reflection film 400 may be 29 at% to 38 at%.

[0149] When the oxygen content in the low-reflection film 400 is 35.8 at%, the reflectivity of the barrier layer can be the lowest. The low-reflection film 400 can have a composition ratio of 41.6 at% of tungsten, 1.3 at% of zinc, 21.4 at% of yttrium, and 35.8 at% of oxygen, and the reflectivity of the barrier layer can be 4.6%. In this case, the thickness of the low-reflection film 400 can be 270 Å.

[0150] The amount of light undergoing destructive interference, which is a factor determining the reflectivity of the barrier layer, can also vary according to the thickness of the low-reflection film 400.

[0151] Figure 8A and Figure 8B shows the change in the optical characteristics of a display device obtained by modifying the structure included in the display device according to an embodiment of the present invention.

[0152] Figure 8A Curve (a) in Figure 8A shows the change in the reflectivity of the barrier layer 133 according to the thickness of the low-reflection film 400 when the oxygen content is 35.4 at%,

[0153] For example, in Figure 8A case (a), the composition ratio of the low-reflection film 400 can be 41.6 at% of molybdenum (Mo), 17.9 at% of titanium (Ti), 35.4 at% of oxygen, and 5.1 at% of carbon. In case (b), the composition ratio of the low-reflection film 400 can be 31.3 at% of molybdenum (Mo), 21.1 at% of titanium (Ti), 42.0 at% of oxygen, and 5.6 at% of carbon.

[0154] In addition, Figure 8A curves (a) and (b) in

[0155] are graphs of the ratio of light with a wavelength of 550 nm reflected by the barrier layer 133 (i.e., the reflectivity of the barrier layer) measured according to the change in the thickness of the low-reflection film 400. Figure 8A Referring to

[0156] curve (a) in Figure 8AIn (b), when the oxygen content is 42 at%, the barrier layer 133 can have a low reflectivity of 4% to 9%. In particular, when the low-reflection film 400 has a thickness of 270 Å, the barrier layer 133 can have a minimum reflectivity of 4.5%.

[0157] That is to say, as shown in Figure 8A (a) or (b) of, the reflectivity of the barrier layer can vary according to the thickness of the low-reflection film 400. In particular, when the thickness of the low-reflection film 400 is in the range of about 150 Å to 400 Å, the reflectivity of the barrier layer can be significantly lower compared to the case where the low-reflection film 400 is not provided. Or, if the low-reflection film 400 has a composition ratio range of metal and oxygen as described in Table 2, and the thickness of the low-reflection film 400 can be in the range of 100 Å to 350 Å, the reflectivity of the barrier layer can be reduced compared to the case where the low-reflection film 400 is not provided.

[0158] Therefore, depending on the type of elements contained in the low-reflection film 400, a lower reflectivity of the barrier layer can be ensured by adjusting the thickness of the low-reflection film 400 within the above range.

[0159] However, as shown in Figure 8A (a) and (b) of, even when the thickness of the low-reflection film 400 is the same, the reflectivity of the barrier layer will vary according to the oxygen content. The reason why the reflectivity varies according to the oxygen content is that as the oxygen content in the low-reflection film 400 changes, the refractive index of the low-reflection film 400 changes, causing the condition of destructive interference between the light reflected by the low-reflection film 400 and the light reflected by the barrier layer 133 to change.

[0160] For example, in Figure 8A (a) of, it can be seen that when the thickness of the low-reflection film 400 is 250 Å, the barrier layer 133 has a minimum reflectivity of 8%. However, when the oxygen content changes as shown in Figure 8A (b) of, that is, when the oxygen content increases, and when the thickness of the low-reflection film 400 is equal to 250 Å, the reflectivity of the barrier layer 133 is about 5.0%. That is to say, the reflectivity of the barrier layer can decrease as the oxygen content in the low-reflection film 400 increases.

[0161] Therefore, when adjusting the thickness of the low-reflection film 400 to reduce the reflectivity of the barrier layer, it may be necessary to consider the oxygen content contained in the low-reflection film 400.

[0162] Specifically, when the oxygen content of the low-reflection film 400 is 35.4 at%, and the thickness of the low-reflection film 400 is 250 Å, the minimum value of the barrier layer reflectivity is approximately 8%. However, when the oxygen content of the low-reflection film 400 is 42 at%, and the thickness of the low-reflection film 400 is 270 Å, the minimum value of the barrier layer reflectivity is approximately 4.5%. Therefore, in order to ensure that the barrier layer reflectivity is at the minimum value, it is also necessary to increase the thickness of the low-reflection film 400 as the oxygen content of the low-reflection film 400 increases.

[0163] In addition, referring to Figure 8B , when the display device 100 includes the low-reflection film 400, the unit film reflectivity of the product unit can also be reduced.

[0164] Figure 8B FIG. shows a schematic diagram comparing the unit film reflectivity of each product unit of the display device 100 according to the wavelength of incident light when the thickness of the low-reflection metal layer 200 is 250 Å and the thickness of the low-reflection film 400 is 250 Å. Here, the oxygen content of the low-reflection film 400 is 35.4 at%.

[0165] A conventional display device 100 including a low-reflection metal layer 200 with a thickness of 250 Å exhibits a unit film reflectivity of 36.5% for the product unit based on a wavelength of 550 nm. Meanwhile, a display device 100 including the low-reflection film 400 with the same thickness instead of the low-reflection metal layer 200 exhibits a unit film reflectivity of approximately 28% for the product unit based on a wavelength of 550 nm.

[0166] Alternatively, even if the low-reflection film 400 has a composition ratio range of metal and oxygen as described in Table 2, the unit film reflectivity of the product unit of the display device including the low-reflection film 400 can be lower than that of the display device with the low-reflection metal layer 200 having the same thickness.

[0167] In one embodiment, as shown in Composition 1 of Table 2, the low-reflection film 400 may contain 31.4 at% of oxygen. When the low-reflection film 400 contains 31.4 at% of oxygen and has a thickness of 250 Å, the unit film reflectivity of the product unit of the display device 100 including the low-reflection film 400 can be 28%.

[0168] In one embodiment, as shown in Composition 3 of Table 2, the low-reflection film 400 may contain 35.8 at% of oxygen. When the low-reflection film 400 contains 35.8 at% of oxygen and has a thickness of 270 Å, the unit film reflectivity of the product unit of the display device 100 including the low-reflection film 400 can be 27%.

[0169] Hereinafter, a method for ensuring a lower barrier layer reflectivity according to an embodiment of the present invention will be described.

[0170] Figures 9 to 11 Shows another example of the cross-sectional structure of a display device according to an embodiment of the present invention.

[0171] Except that a low-reflection film 400 is provided under the source electrode 143, drain electrode 144, and gate electrode 145 of the driving transistor T1 instead of a low-reflection metal layer, Figure 9 The cross-sectional structure of the shown display device may be the same as that of the display device described with reference to Figure 4 Therefore, repeated descriptions will be omitted.

[0172] Referring to Figure 9 , the low-reflection film 400 may be provided under the source electrode 143, drain electrode 144, and gate electrode 145 of the driving transistor T1.

[0173] The low-reflection film 400 may be provided to cover all the lower surfaces of the source electrode 143, drain electrode 144, and gate electrode 145. That is, the area of the lower surface of the low-reflection film 400 may be equal to or larger than the area of the lower surfaces of the source electrode 143, drain electrode 144, and gate electrode 145.

[0174] The low-reflection film 400 may be provided between the source electrode 143, drain electrode 144, and the interlayer insulating layer 142. That is, the upper surface of the low-reflection film 400 may be set to contact the lower surfaces of the source electrode 143 and drain electrode 144, and the lower surface of the low-reflection film 400 may contact the upper surface of the interlayer insulating layer 142.

[0175] The low-reflection film 400 may be made of the same composition as the low-reflection film described in (a) with reference to Figure 8A .

[0176] For example, the low-reflection film 400 may be formed by a sputtering target of molybdenum (Mo) and titanium oxide (TiO 2 ), and the composition ratio of the low-reflection film 400 may be 41.6 at% of molybdenum (Mo), 17.9 at% of titanium (Ti), 35.4 at% of oxygen, and 5.1 at% of carbon.

[0177] When the low-reflection film 400 has the same composition as the above example, the source electrode 143, drain electrode 144, and gate electrode 145 may have the reflection characteristics as shown in (a) of Figure 8A .

[0178] That is, if the thickness of the low-reflection film 400 is 250 Å, the reflectance of the source electrode 143, drain electrode 144, and gate electrode 145 may be 8%, which is the same as the barrier layer reflectance.

[0179] However, since in addition to the barrier layer 133, the low-reflection film 400 is also disposed under the source electrode 143, the drain electrode 144, and the gate electrode 145, the unit film reflectance of the entire product unit of the display device 100 can be further reduced. That is to say, the unit film reflectance of the product unit can be 24%.

[0180] Except that the bank layer 170 is black, Figure 10 the cross-sectional structure of the shown display device 100 is the same as that of the display device described in the reference Figure 9 description, so the repeated description will be omitted.

[0181] The bank layer 170 may further include at least one of a black pigment, a black resin, graphite, black ink, intaglio ink, black spray, and black enamel. When the bank layer 170 is made of the above materials, the bank layer can absorb at least 80% of visible light.

[0182] When the bank layer 170 is black, the bank layer 170 can absorb the light incident from the outside of the display device 100, so the unit film reflectance of the entire product unit of the display device 100 can be further reduced. That is to say, the unit film reflectance of the product unit of the display device 100 can be 15%.

[0183] Alternatively, even if the low-reflection film 400 has the composition ratio range of metal and oxygen described in Reference Table 2, compared with the display device having the low-reflection metal layer 200 with the same thickness, the display device 100 including the low-reflection film 400 and the black bank layer 170 can have a lower unit film reflectance of the product unit.

[0184] In one embodiment, as shown in Composition 1 of Table 2, the low-reflection film 400 may include 31.4 at% of oxygen. When the low-reflection film 400 includes 31.4 at% of oxygen and has a thickness of 250 Å, the unit film reflectance of the product unit of the display device 100 including the low-reflection film 400 and the black bank layer 170 can be 18.7%.

[0185] In one embodiment, as shown in Composition 3 of Table 2, the low-reflection film 400 may include 35.8 at% of oxygen. When the low-reflection film 400 includes 35.8 at% of oxygen and has a thickness of 270 Å, the unit film reflectance of the product unit of the display device 100 including the low-reflection film 400 and the black bank layer 170 can be 17%.

[0186] Alternatively, the display device 100 may further include a polarizing plate (not shown). In one embodiment, the polarizing plate (not shown) may be disposed under the substrate 120. If the display device 100 further includes a polarizing plate, the unit film reflectance of the product unit of the display device 100 can be kept constant while improving the reflection color of the display device 100.

[0187] In addition to further providing a third buffer layer 1100 under the low-reflection film 400 provided under the first buffer layer 131, the barrier layer 133, and the wiring electrode 134, Figure 11 the cross-sectional structure of the shown display device 100 is the same as that of the reference Figure 4 described. Therefore, repeated descriptions will be omitted.

[0188] The third buffer layer 1100 can be provided between the substrate 120, the first buffer layer 131, and the low-reflection film 400. That is, the upper surface of the third buffer layer 1100 can contact the lower surfaces of the first buffer layer 131 and the low-reflection film 400, and the lower surface of the third buffer layer 1100 can contact the upper surface of the substrate 120.

[0189] The third buffer layer 1100 can be made of the same material as the first buffer layer 131 or the second buffer layer 132. For example, the third buffer layer 1100 can be made of silicon nitride (SiNx) or silicon oxide (SiOx).

[0190] The thickness of the third buffer layer 1100 can be in the range of 400 Å to 600 Å, but is not limited thereto.

[0191] Since the third buffer layer 1100 is provided under the low-reflection film 400, the barrier layer reflectivity can be further reduced.

[0192] Figure 12 is Figure 11 an enlarged view of part C of

[0193] Referring to Figure 12 , the light incident from the outside of the display device 100 can be partially reflected by the third buffer layer 1100 and can partially transmit through the third buffer layer 1100. The light transmitted through the third buffer layer 1100 can be partially reflected by the low-reflection film 400 and can partially pass through the low-reflection film 400. The light passing through the low-reflection film 400 can be reflected by the barrier layer 133.

[0194] In this case, the light reflected from the barrier layer 133 can interfere destructively with the light reflected from the low-reflection film 400 or the light reflected from the third buffer layer 1100.

[0195] Specifically, the light reflected from the barrier layer 133 can interfere destructively with the light reflected from the low-reflection film 400.

[0196] However, part of the light reflected from the barrier layer 133 may not be canceled by the light reflected from the low-reflection film 400 and may travel toward the outside of the display device 100.

[0197] In this case, the light traveling outward can produce additional destructive interference with the light reflected from the third buffer layer 1100.

[0198] That is, if the display device 100 further includes a third buffer layer 1100, the amount of light that disappears due to destructive interference in the light reflected from the blocking layer 133 can increase, such that the blocking layer reflectance of the display device 100 can be lower than the reference Figure 4 described blocking layer reflectance.

[0199] Figure 13 illustrates Figure 11 the wavelength-dependent optical characteristics of the display device shown.

[0200] Figure 13 (a) of is a table showing the blocking layer reflectance depending on the thickness of the third buffer layer 1100 and the average value of the blocking layer reflectance for each wavelength that varies according to the thickness of the third buffer layer 1100 when the thickness of the low-reflection film 400 is 280 Å. Figure 13 (b) of is a graph of the blocking layer reflectance for each wavelength that varies according to the thickness of the third buffer layer 1100.

[0201] Referring to Figure 13 (a) of, when the thickness of the third buffer layer 1100 is 0 (i.e., the comparative example), that is, when the third buffer layer 1100 is not provided, only the low-reflection film 400 is provided under the blocking layer 133, as Figure 4 shown. If the thickness of the low-reflection film 400 is 280 Å, the blocking layer reflectance can be 8.6%, as Figure 8A shown in (a) of.

[0202] Referring to Figure 13 (a) and (b) of, it can be seen that if there is a third buffer layer 1100 under the low-reflection film 400, the blocking layer reflectance is further reduced. When the third buffer layer 1100 has a thickness of 500 Å, the blocking layer has a minimum reflectance of 4.7%.

[0203] In addition, when the third buffer layer 1100 is provided, the difference in the blocking layer reflectance related to the wavelength of the incident light can be reduced.

[0204] As Figure 13 shown in (b) of, by adjusting the thickness of the third buffer layer 1100, light with a lower or higher wavelength in the light reflected from the blocking layer 133 may produce more destructive interference with the light reflected from the third buffer layer 1100 than light of other wavelengths.

[0205] Referring to Figure 13In (a) and (b) thereof, when the thickness of the third buffer layer 1100 is 0 (i.e., comparative example), that is, when the third buffer layer 1100 is not provided, it can be seen that when the wavelength of the light incident from the outside of the display device 100 is between 360 nm and 740 nm, the average value of the barrier layer reflectance is 12.2%.

[0206] That is, when light having a lower wavelength of about 360 nm or a higher wavelength of about 740 nm is incident on the display device 100, the barrier layer reflectance is higher, so that the average value of the barrier layer reflectance increases.

[0207] Therefore, the display device 100 may not be able to correctly represent black. That is, black has a slightly reddish or bluish tint.

[0208] However, if the display device 100 includes the third buffer layer 1100, the average value of the barrier layer reflectance decreases, as shown in Figure 13 (a) and (b) thereof. For example, when the third buffer layer 1100 has a thickness of 500 Å, the average value of the barrier layer reflectance can be as low as 6.7%.

[0209] In particular, in the case where the thickness of the third buffer layer 1100 is set in the range of 400 Å to 600 Å, light having a lower wavelength of about 360 nm or a higher wavelength of about 740 nm may cause more destructive interference to the reflected light reflected from the third buffer layer 1100, thereby reducing the average value of the barrier layer reflectance. Therefore, the problem that the black of the display device 100 is not correctly represented can be improved.

[0210] That is, the display device 100 may further include the third buffer layer 1100, thereby further improving the reflected color of the display device 100.

[0211] The above embodiments of the present invention will be briefly described below.

[0212] According to an embodiment of the present invention, a display device may be provided, including: a substrate; a barrier layer provided on the substrate; and a low-reflection film provided under the barrier layer and containing at least one metal element and oxygen, and the content of oxygen is in the range of 31.6 at% to 47.3 at%.

[0213] In the display device according to an embodiment of the present invention, the low-reflection film may contain at least one of Mo, Ti, Ni, and W.

[0214] In the display device according to an embodiment of the present invention, the content of Mo contained in the low-reflection film may be equal to or greater than the content of Ti contained in the low-reflection film.

[0215] In the display device according to an embodiment of the present invention, the ratio of Mo, Ti, and O contained in the low-reflection film may be 3:1:2.

[0216] In the display device according to an embodiment of the present invention, the content of Mo contained in the low-reflection film may be 47.5 at%, and the content of Ti contained in the low-reflection film may be 15.9 at%.

[0217] In the display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 31.6 at%, the content of Mo contained in the low-reflection film may be 47.5 at%, and the content of Ti contained in the low-reflection film may be 15.9 at%.

[0218] In the display device according to an embodiment of the present invention, the ratio of Mo, Ti, and O contained in the low-reflection film may be 2.3:1:2.

[0219] In the display device according to an embodiment of the present invention, the content of Mo contained in the low-reflection film may be 41.6 at%, and the content of Ti contained in the low-reflection film may be 17.9 at%.

[0220] In the display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 35.4 at%, the content of Mo contained in the low-reflection film may be 41.6 at%, and the content of Ti contained in the low-reflection film may be 17.9 at%.

[0221] In the display device according to an embodiment of the present invention, the ratio of Mo, Ti, and O contained in the low-reflection film may be 1.5:1:2.

[0222] In the display device according to an embodiment of the present invention, the content of Mo contained in the low-reflection film may be 31.3 at%, and the content of Ti contained in the low-reflection film may be 21.1 at%.

[0223] In the display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 42 at%, the content of Mo contained in the low-reflection film may be 31.3 at%, and the content of Ti contained in the low-reflection film may be 21.1 at%.

[0224] In the display device according to an embodiment of the present invention, the ratio of Mo, Ti, and O contained in the low-reflection film may be 1:1:2.

[0225] In the display device according to an embodiment of the present invention, the content of Mo contained in the low-reflection film may be 23.8 at%, and the content of Ti contained in the low-reflection film may be 23.6 at%.

[0226] In a display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 47.3 at%, the content of Mo contained in the low-reflection film may be 23.8 at%, and the content of Ti contained in the low-reflection film may be 23.6 at%.

[0227] In a display device according to an embodiment of the present invention, the content of Mo included in the low-reflection film may be in the range of 23.8 at% to 47.5 at%.

[0228] In a display device according to an embodiment of the present invention, the content of Ti contained in the low-reflection film may be in the range of 15.9 at% to 23.6 at%.

[0229] In a display device according to an embodiment of the present invention, the low-reflection film may be disposed between the barrier layer and the substrate, and the low-reflection film may be in contact with the substrate.

[0230] In a display device according to an embodiment of the present invention, the thickness of the low-reflection film may be between 150 Å and 400 Å.

[0231] A display device according to an embodiment of the present invention may further include a buffer layer disposed between the barrier layer and the substrate and disposed below the low-reflection film.

[0232] A display device according to an embodiment of the present invention may further include a transistor including a source electrode, a drain electrode, and a gate electrode. The low-reflection film may be disposed below at least one of the source electrode, the drain electrode, and the gate electrode.

[0233] A display device according to an embodiment of the present invention may further include a black matrix layer located on the transistor.

[0234] In a display device according to an embodiment of the present invention, the low-reflection film may be formed by a sputtering process, and the target used in the sputtering process may include a metal and an oxide.

[0235] In a display device according to an embodiment of the present invention, the sputtering target for forming the low-reflection film may include at least one metal among Mo, Ti, and Ni, and the sputtering target for forming the low-reflection film may include TiO 2 、Ta 2 O 5 、MoOx、Nb 2 O 5 、Y 2 O 3 、SiO 2 、ZnO、BaO、GzO、In 2 O 3 、MgO、WO 3 、SnO 2and at least one oxide in ZTO.

[0236] According to an embodiment of the present invention, a display device may be provided, including a substrate and at least one material layer. The at least one material layer includes a first material layer for forming an electrode or wiring on the substrate and containing a metal element, and a second material layer disposed under the first material layer and containing oxygen. The content of oxygen contained in the second material layer is in the range of 31.6 at% to 47.3 at%.

[0237] In the display device according to an embodiment of the present invention, the second material layer may include at least one of Mo, Ti, Ni, and W.

[0238] In the display device according to an embodiment of the present invention, the content of Mo contained in the second material layer may be in the range of 23.8 at% to 47.5 at%.

[0239] In the display device according to an embodiment of the present invention, the content of Ti contained in the second material layer may be in the range of 15.9 at% to 23.6 at%.

[0240] In the display device according to an embodiment of the present invention, the sputtering target for forming the second material layer may include at least one metal of Mo, Ti, Ni, and W, and the sputtering target for forming the second material layer may include TiO 2 , Ta 2 O 5 , MoOx, Nb 2 O 5 , Y 2 O 3 , SiO 2 , ZnO, BaO, GzO, In 2 O 3 , MgO, WO 3 , SnO 2 and at least one oxide in ZTO.

[0241] In the display device according to an embodiment of the present invention, the ratio of Mo, Ti, and O contained in the second material layer may be 1.5:1:2.

[0242] In the display device according to an embodiment of the present invention, the content of Mo contained in the second material layer may be 31.3 at%, and the content of Ti contained in the second material layer may be 21.1 at%.

[0243] According to an embodiment of the present invention, a display device may be provided, including: a substrate; a barrier layer disposed on the substrate; a transistor disposed on the barrier layer and including a source electrode, a drain electrode, and a gate electrode; and a low-reflection film disposed under at least one of the source electrode, the drain electrode, and the gate electrode and the barrier layer and containing at least one metal element and oxygen, the content of oxygen being in the range of 31.6 at% to 47.3 at%.

[0244] In the display device according to an embodiment of the present invention, the low-reflection film may include at least one of Mo, Ti, Ni, and W.

[0245] In the display device according to an embodiment of the present invention, the ratio of Mo, Ti, and O contained in the low-reflection film may be 1.5:1:2.

[0246] In the display device according to an embodiment of the present invention, the content of Mo contained in the low-reflection film may be 31.3 at%, and the content of Ti contained in the low-reflection film may be 21.1 at%.

[0247] According to an embodiment of the present invention, a display device may be provided, including: a substrate; a barrier layer disposed on the substrate; and a low-reflection film disposed under the barrier layer and containing at least one metal element and oxygen, the content of oxygen being in the range of 29 at% to 38 at%.

[0248] In the display device according to an embodiment of the present invention, the low-reflection film may contain at least one of W, Y, Zn, and Nb.

[0249] In the display device according to an embodiment of the present invention, the content of W contained in the low-reflection film may be 47.8 at%, the content of Zn contained in the low-reflection film may be 6.5 at%, and the content of Y contained in the low-reflection film may be 14.4 at%.

[0250] In the display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 31.4 at%, the content of W contained in the low-reflection film may be 47.8 at%, the content of Zn contained in the low-reflection film may be 6.5 at%, and the content of Y contained in the low-reflection film may be 14.4 at%.

[0251] In the display device according to an embodiment of the present invention, the content of W contained in the low-reflection film may be 44.4 at%, the content of Zn contained in the low-reflection film may be 5.5 at%, and the content of Y contained in the low-reflection film may be 16.6 at%.

[0252] In a display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 33.3 at%, the content of W contained in the low-reflection film can be 44.4 at%, the content of Zn contained in the low-reflection film can be 5.5 at%, and the content of Y contained in the low-reflection film can be 16.6 at%.

[0253] In a display device according to an embodiment of the present invention, the content of W contained in the low-reflection film can be 41.6 at%, the content of Zn contained in the low-reflection film can be 1.3 at%, and the content of Y contained in the low-reflection film can be 21.4 at%.

[0254] In a display device according to an embodiment of the present invention, when the content of O contained in the low-reflection film is 35.8 at%, the content of W contained in the low-reflection film can be 41.6 at%, the content of Zn contained in the low-reflection film can be 1.3 at%, and the content of Y contained in the low-reflection film can be 21.4 at%.

[0255] In a display device according to an embodiment of the present invention, the content of W contained in the low-reflection film can be in the range of 41.6 at% to 47.8 at%.

[0256] In a display device according to an embodiment of the present invention, the content of Zn contained in the low-reflection film can be in the range of 1.3 at% to 6.5 at%.

[0257] In a display device according to an embodiment of the present invention, the content of Y contained in the low-reflection film can be in the range of 14.4 at% to 21.4 at%.

[0258] In a display device according to an embodiment of the present invention, the low-reflection film can be disposed between the barrier layer and the substrate and can be in contact with the upper surface of the substrate.

[0259] In a display device according to an embodiment of the present invention, the thickness of the low-reflection film can be in the range between 100 Å and 350 Å.

[0260] A display device according to an embodiment of the present invention may further include a transistor, the transistor including a source electrode, a drain electrode, and a gate electrode, wherein the low-reflection film is disposed below at least one of the source electrode, the drain electrode, and the gate electrode.

[0261] A display device according to an embodiment of the present invention may further include a black bank layer on the transistor.

[0262] In a display device according to an embodiment of the present invention, the low-reflection film can be formed by a sputtering process, and the target used in the sputtering process may include metals and metal oxides.

[0263] In a display device according to an embodiment of the present invention, the sputtering target for forming the low-reflection film may include at least one metal selected from the group consisting of Mo, Ti, Ni, W, Zn, Y, and Nb, and the sputtering target for forming the low-reflection film may include selected from TiO 2 , Ta 2 O 5 , MoOx, Nb 2 O 5 , Y 2 O 3 , SiO 2 , ZnO, BaO, GZO, In 2 O 3 , MgO, WO 3 , SnO 2 and at least one metal oxide selected from the group consisting of ZTO.

[0264] In a display device according to an embodiment of the present invention, the ratio of W, Zn, Y, and O contained in the low-reflection film may be 7.5:1:2:5.

[0265] In a display device according to an embodiment of the present invention, the ratio of W, Zn, Y, and O contained in the low-reflection film may be 8:1:3:6.

[0266] In a display device according to an embodiment of the present invention, the ratio of W, Zn, Y, and O contained in the low-reflection film may be 32:1:17:28.

[0267] According to an embodiment of the present invention, a display device may be provided, including: a substrate; a barrier layer provided on the substrate; a transistor provided on the barrier layer and including a source electrode, a drain electrode, and a gate electrode; and a low-reflection film provided under at least one of the source electrode, the drain electrode, and the gate electrode and the barrier layer and containing at least one metal element and oxygen, the content of oxygen being in the range of 29 at% to 38 at%.

[0268] In a display device according to an embodiment of the present invention, the low-reflection film may include at least one of W, Y, Zn, and Nb.

[0269] In a display device according to an embodiment of the present invention, the ratio of W, Zn, Y, and O contained in the low-reflection film may be 7.5:1:2:5.

[0270] In a display device according to an embodiment of the present invention, the content of W contained in the low-reflection film may be 47.8 at%, the content of Zn contained in the low-reflection film may be 6.5 at%, and the content of Y contained in the low-reflection film may be 14.4 at%.

[0271] The foregoing description has been presented to enable any person skilled in the art to make and use the inventive concept, and the foregoing description has been provided in the context of a particular application and its requirements. Various modifications, additions, and substitutions to the described embodiments will be apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the invention. The foregoing description and drawings have provided only examples of the inventive concept for illustrative purposes. That is, the disclosed embodiments are intended to illustrate the scope of the inventive concept of the invention.

Claims

1. A display device, comprising: substrate; a barrier layer, the barrier layer being disposed on the substrate; as well as a low reflection film disposed below the barrier layer and containing a metal element and oxygen, Wherein, the oxygen content in the low reflection film is in the range of 31.6at% to 47.3at%.

2. The display device according to claim 1, wherein: The low reflection film includes at least one of Mo, Ti, Ni, and W.

3. The display device according to claim 2, wherein: The content of Mo contained in the low reflection film is equal to or greater than the content of Ti contained in the low reflection film.

4. The display device according to claim 2, wherein: The ratio of Mo and Ti contained in the low reflection film is in the range of 1:1 to 3:

1.

5. The display device according to claim 4, wherein: The ratio of Ti to O contained in the low reflection film is 1:

2.

6. The display device according to claim 5, wherein: The content of Mo contained in the low reflection film was 31.3 at %, and the content of Ti contained in the low reflection film was 21.1 at %.

7. The display device according to claim 6, wherein: The content of O contained in the low reflection film is 42 at %.

8. The display device according to claim 1, wherein: The low-reflection film is disposed between the barrier layer and the substrate, and a lower surface of the low-reflection film is in contact with the substrate.

9. The display device according to claim 1, wherein: The low reflection film has a thickness between 150 Å and 400 Å. 10 . The display device according to claim 1 , further comprising a buffer layer provided between the substrate and the low-reflection film.

11. The display device according to claim 1 , further comprising a transistor disposed on the substrate, the transistor comprising a source electrode, a drain electrode and a gate electrode, in, The low-reflection film is also provided below at least one of the source electrode, the drain electrode, and the gate electrode. 12 . The display device according to claim 11 , further comprising a black bank layer on the transistor.

13. A display device, comprising: substrate; a barrier layer, the barrier layer being disposed on the substrate; and A low reflection film is provided under the barrier layer and contains at least one metal element and oxygen, wherein the content of oxygen is in a range of 29 at % to 38 at %.

14. The display device according to claim 13, wherein: The low reflection film contains at least one of W, Y, Zn and Nb.

15. The display device according to claim 14, wherein: The content of W contained in the low reflection film is 47.8 at %, the content of Zn contained in the low reflection film is 6.5 at %, and the content of Y contained in the low reflection film is 14.4 at %.

16. The display device according to claim 14, wherein: When the content of O contained in the low reflection film is 31.4 at %, the content of W contained in the low reflection film is 47.8 at %, the content of Zn contained in the low reflection film is 6.5 at %, and the content of Y contained in the low reflection film is 14.4 at %.

17. The display device according to claim 14, wherein: The content of W contained in the low reflection film is 44.4 at %, the content of Zn contained in the low reflection film is 5.5 at %, and the content of Y contained in the low reflection film is 16.6 at %.

18. The display device according to claim 14, wherein: When the content of O contained in the low reflection film is 33.3 at %, the content of W contained in the low reflection film is 44.4 at %, the content of Zn contained in the low reflection film is 5.5 at %, and the content of Y contained in the low reflection film is 16.6 at %.

19. The display device according to claim 14, wherein: The content of W contained in the low reflection film is 41.6 at %, the content of Zn contained in the low reflection film is 1.3 at %, and the content of Y contained in the low reflection film is 21.4 at %.

20. The display device according to claim 14, wherein: When the content of O contained in the low reflection film is 35.8 at %, the content of W contained in the low reflection film is 41.6 at %, the content of Zn contained in the low reflection film is 1.3 at %, and the content of Y contained in the low reflection film is 21.4 at %.

21. The display device according to claim 14, wherein: The content of W included in the low reflection film is in the range of 41.6 at % to 47.8 at %.

22. The display device according to claim 14, wherein: The content of Zn included in the low reflection film is in the range of 1.3 at % to 6.5 at %.

23. The display device according to claim 14, wherein: The content of Y included in the low reflection film is in the range of 14.4 at % to 21.4 at %.

24. The display device according to claim 13, wherein: The low reflection film is disposed between the barrier layer and the substrate and is in contact with an upper surface of the substrate.

25. The display device according to claim 13, wherein: The thickness of the low reflection film ranges between 100Å and 350Å.

26. The display device according to claim 13, further comprising a transistor, wherein the transistor comprises a source electrode, a drain electrode and a gate electrode. in, The low-reflection film is provided under at least one of the source electrode, the drain electrode, and the gate electrode.

27. The display device according to claim 26, further comprising a black bank layer on the transistor.

28. The display device according to claim 14, wherein: The ratio of W, Zn, Y and O contained in the low reflection film is 7.5:1:2:

5.

29. The display device according to claim 14, wherein: The ratio of W, Zn, Y and O contained in the low reflection film is 8:1:3:

6.

30. The display device according to claim 14, wherein: The ratio of W, Zn, Y and O contained in the low reflection film is 32:1:17:

28.

31. A display device comprising: substrate; a barrier layer, the barrier layer being disposed on the substrate; a transistor disposed on the barrier layer and comprising a source, a drain and a gate; as well as A low-reflection film is disposed under at least one of the source electrode, the drain electrode, and the gate electrode and the barrier layer and contains at least one metal element and oxygen, wherein the content of the oxygen is in the range of 29 at % to 38 at %.

32. The display device according to claim 31, wherein: The low reflection film includes at least one of W, Y, Zn and Nb.

33. The display device according to claim 32, wherein: The ratio of W, Zn, Y and O contained in the low reflection film is 7.5:1:2:

5.

34. The display device according to claim 32, wherein: The content of W contained in the low reflection film is 47.8 at %, the content of Zn contained in the low reflection film is 6.5 at %, and the content of Y contained in the low reflection film is 14.4 at %.

35. The display device according to claim 32, wherein: The ratio of W, Zn, Y and O contained in the low reflection film is 8:1:3:

6.

36. The display device according to claim 32, wherein: The content of W contained in the low reflection film is 44.4 at %, the content of Zn contained in the low reflection film is 5.5 at %, and the content of Y contained in the low reflection film is 16.6 at %.

37. The display device according to claim 31, wherein: The thickness of the low reflection film ranges between 100Å and 350Å.

Images