Photoelectric sensor for gamma-ray spectrum measurement

Abstract

The invention relates to the technical field of space environment detection, in particular to a photoelectric sensor for gamma-ray spectrum measurement, which comprises a gamma-ray photon absorption transmission structure, a photoelectric conversion structure and an electric signal output structure, and is characterized in that the gamma-ray photon absorption transmission structure comprises a crystal sealing glass window, a crystal structure assembly and a crystal gland; the photoelectric conversion structure comprises a photoelectric tube first fixing ring, a photoelectric tube assembly, a photoelectric tube second fixing ring and a photoelectric tube gland; the electric signal output structure comprises an electric signal front-end processing board, a supporting column, a mounting base and a signal output lead. The overall structure of the sensor adopts upper, middle and lower three-position connection, so that the assembly precision and reliability of the whole machine are improved; seamless connection between the crystal and the photomultiplier tube is realized through a photoelectric coupling glue potting mode, and multiplication of gamma photon signals and photoelectric conversion efficiency are improved.

Description

Technical Field

[0001] This application relates to the technical field of space environment detection. Specifically, it relates to a photoelectric sensor for gamma energy spectrum measurement. Background Art

[0002] Gamma energy spectrum measurement is achieved based on the interaction between space gamma photons and a photoelectric detector. This measurement method utilizes the photons excited when gamma photons interact with a scintillator. After being reflected multiple times by the reflective layer on the outer surface of the scintillator, the photons enter the photocathode of a photomultiplier tube through an optical coupling agent and are collected and converted into photoelectrons. The photoelectron signal is multiplied by the high voltage of the photomultiplier tube and then enters the anode collecting plate to form a current signal. The signal is amplified by the front-end circuit and then output as an electrical pulse signal by the acquisition electronics. Finally, the flux and energy spectrum information of space gamma radiation are obtained after being processed by the ground data processing system.

[0003] An optoelectronic sensor is a highly integrated sensor designed based on the optoelectronic conversion measurement principle, and is used to receive the gamma radiation intensity signal entering the optoelectronic measurement system from space to achieve the purpose of gamma signal measurement.

[0004] In order to make the gamma measurement sensor a high-precision product, it is necessary to design a fine-sealed structure component for the scintillator, and then design a fine-sealed structure component for the photomultiplier tube. The photoelectric sensor product is obtained through high-precision coupling and assembly, and a 3-symmetrical point design installation interface is adopted. Currently, there is no sensor using this structural design for space gamma radiation measurement photoelectric sensors. Summary of the Invention

[0005] This application provides a photoelectric sensor for gamma energy spectrum measurement, which can reliably identify the gamma radiation dose at a certain position in space through the optoelectronic conversion sensor and transmit the gamma photon signal to the internal measurement circuit of the electronics.

[0006] To achieve the above object, the present application provides a photoelectric sensor for gamma energy spectrum measurement, including a gamma photon absorption and transmission structure, a photoelectric conversion structure, and an electrical signal output structure, wherein: The gamma photon absorption and transmission structure includes a crystal sealed glass window, a crystal structure assembly, and a crystal gland, the crystal sealed glass window is arranged directly above the crystal structure assembly, and the crystal gland is arranged directly below the crystal structure assembly; The photoelectric conversion structure includes a first phototube fixing ring, a phototube assembly, a second phototube fixing ring, and a phototube gland, the first phototube fixing ring is arranged directly above the crystal sealed glass window and buckles on the lower part of the phototube assembly, the second phototube fixing ring buckles on the upper part of the phototube assembly, and the phototube gland is arranged directly above the second phototube fixing ring; The electrical signal output structure includes an electrical signal front-end processing board, a support column, a mounting seat, and a signal output lead, the mounting seat is arranged directly above the phototube gland, the electrical signal front-end processing board is fixed on the mounting seat through the support column, and one end of the signal output lead is connected to the phototube assembly and the other end is connected to the electrical signal front-end processing board.

[0007] Further, a crystal buffer layer is arranged between the crystal structure assembly and the crystal gland, and a crystal photon coupling layer is arranged between the crystal structure assembly and the crystal sealed glass window.

[0008] Further, the crystal structure assembly includes a crystal, a reflective layer, and a crystal housing, wherein: The crystal is arranged inside the crystal housing; The reflective layer is arranged in the cavity between the crystal and the crystal housing; The top end of the crystal housing passes through the crystal photon coupling layer and is connected to the crystal sealed glass window, and the bottom end passes through the crystal buffer layer and is connected to the crystal gland through a crystal gasket.

[0009] Further, a photoelectric coupling gasket is arranged between the first phototube fixing ring and the crystal sealed glass window, and a phototube damping pad is arranged between the second phototube fixing ring and the phototube assembly.

[0010] Further, the phototube assembly includes a phototube housing and a photomultiplier tube, and the photomultiplier tube is buckled and fixed inside the phototube housing through the first phototube fixing ring and the second phototube fixing ring.

[0011] Further, a fixing sleeve is arranged between the mounting seat and the phototube gland, the fixing sleeve buckles on the phototube gland, and the mounting seat is arranged on the fixing sleeve through a threaded connection.

[0012] Further, the crystal sealed glass window is of a "V" - shaped structure.

[0013] The photoelectric sensor for gamma energy spectrum measurement provided by the present application has the following beneficial effects:

[0014] (1) The overall structure of the sensor in this application adopts three connections at the upper, middle, and lower parts, improving the assembly accuracy and reliability of the whole machine; through the method of potting with optoelectronic coupling glue, a seamless connection between the crystal and the photomultiplier tube is achieved, improving the multiplication and optoelectronic conversion efficiency of gamma photon signals.

[0015] (2) In this application, the crystal and the photomultiplier tube are respectively set as component structures, which is conducive to the integrated connection and assembly of the detector. Moreover, a flexible optoelectronic coupling glue is used to connect the crystal and the photomultiplier tube, improving the mechanical resistance performance of the weak positions of each component in a vibration environment and facilitating the reliable transmission of signals.

[0016] (3) Elastic washers are arranged between various structures in this application to achieve the loosening prevention of small gaps between components. A damping pad is set to fix the photomultiplier tube, which is conducive to loosening prevention and can smoothly extend under stress conditions and quickly recover deformation under pressure release. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings constituting a part of this application are used to provide a further understanding of this application, making other features, purposes, and advantages of this application more obvious. The schematic drawings and descriptions of the exemplary embodiments of this application are used to explain this application and do not constitute an improper limitation to this application. In the drawings:

[0018] Figure 1 is a schematic diagram of the optoelectronic sensor for gamma energy spectrum measurement provided by an embodiment of this application;

[0019] Figure 2 is a schematic diagram of the internal structure of the optoelectronic sensor for gamma energy spectrum measurement provided by an embodiment of this application;

[0020] Figure 3 is a schematic diagram of the photomultiplier tube provided by an embodiment of this application;

[0021] Figure 4 is a schematic diagram of the phototube housing provided by an embodiment of this application;

[0022] Figure 5 is a schematic diagram of the crystal housing provided by an embodiment of this application;

[0023] Figure 6 is a schematic diagram of the fixing sleeve provided by an embodiment of this application;

[0024] Figure 7 is a schematic diagram of the phototube gland provided by an embodiment of this application;

[0025] Figure 8 is a schematic diagram of the crystal sealed glass window provided by an embodiment of this application;

[0026] In the figure: 01 - Gamma photon absorption and transmission structure, 02 - Photoelectric conversion structure, 03 - Electrical signal output structure, 1 - Front-end electrical signal processing board, 2 - Support column, 3 - Mounting base, 4 - Fixed sleeve, 5 - Signal output lead, 6 - Phototube gland, 7 - Second fixed ring of phototube, 8 - Phototube shock pad, 9 - Phototube housing, 10 - First fixed ring of phototube, 11 - Photomultiplier tube, 12 - Photoelectric coupling gasket, 13 - Crystal sealed glass window, 14 - Crystal photon coupling layer, 15 - Crystal housing, 16 - Crystal, 17 - Reflective layer, 18 - Crystal buffer layer, 19 - Crystal sealing gasket, 20 - Crystal gland. Detailed implementation manners

[0027] In order to enable those skilled in the art to better understand the solution of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of this application.

[0028] It should be noted that the terms "first", "second", etc. in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances for the embodiments of this application described here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0029] In this application, the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", etc. is based on the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe this application and its embodiments, and are not used to limit that the indicated devices, elements or components must have a specific orientation or be constructed and operated in a specific orientation.

[0030] Moreover, in addition to being able to represent the orientation or positional relationship, some of the above terms may also be used to represent other meanings. For example, the term "upper" may also be used to represent a certain attachment relationship or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.

[0031] In addition, the term "plurality" shall mean two or more.

[0032] It should be noted that, without conflict, the embodiments in this application and the features in the embodiments may be combined with each other. The following will detail this application with reference to the accompanying drawings and in conjunction with the embodiments.

[0033] As Figure 1-2 shown, this application provides a photoelectric sensor for gamma energy spectrum measurement, including a gamma photon absorption and transmission structure 01, a photoelectric conversion structure 02, and an electrical signal output structure 03, where: the gamma photon absorption and transmission structure 01 includes a crystal sealed glass window 13, a crystal structure assembly, and a crystal gland 20. The crystal sealed glass window 13 is disposed directly above the crystal structure assembly, and the crystal gland 20 is disposed directly below the crystal structure assembly; the photoelectric conversion structure 02 includes a first phototube fixing ring 10, a phototube assembly, a second phototube fixing ring 7, and a phototube gland 6. The first phototube fixing ring 10 is disposed directly above the crystal sealed glass window 13 and buckles below the phototube assembly. The second phototube fixing ring 7 buckles above the phototube assembly, and the phototube gland 6 is disposed directly above the second phototube fixing ring 7; the electrical signal output structure 03 includes an electrical signal front-end processing board 1, a support column 2, a mounting base 3, and a signal output lead 5. The mounting base 3 is disposed directly above the phototube gland 6. The electrical signal front-end processing board 1 is fixed to the mounting base 3 through the support column 2. One end of the signal output lead 5 is connected to the phototube assembly, and the other end is connected to the electrical signal front-end processing board 1.

[0034] Specifically, a photoelectric sensor for gamma energy spectrum measurement provided by an embodiment of this application adopts technologies such as integral structure integration, high-precision assembly of multiple components, and multi-point support installation, and can reliably transmit the gamma radiation dose received at a certain position in space through the photoelectric conversion sensor, identify the gamma photon signal, and transmit it to the internal measurement circuit of the electronics, solving the problem of reliable reception and identification of gamma photon signals by the photoelectric sensor for space gamma radiation measurement.

[0035] More specifically, in the embodiments of the present application, the gamma photon absorption and transmission structure 01, the photoelectric conversion structure 02, and the electrical signal output structure 03 cooperate together to achieve the detection of gamma photons. Among them, gamma photons pass through the crystal gland 20 and the crystal buffer layer 18 to reach the crystal 16. After multiple reflections in the crystal 16 by the reflective layer 17, the photons pass through the photon coupling layer of the crystal 16 to reach the crystal sealing glass window 13; the gamma photons reaching the crystal sealing glass window 13 are coupled through the photoelectric coupling gasket 12 and enter the photomultiplier tube 11. After being multiplied by the dynode stage in the photomultiplier tube 11, they are converted into electrical signals through the internal voltage dividing circuit and enter the signal output lead 5 of the photomultiplier tube 11; the electrical signals are introduced into the electrical signal front-end processing board 1 through the signal output lead 5, and are stably transmitted to the subsequent signal comprehensive processing unit through the electrical signal front-end processing board 1, and corresponding pulse signals are output. Then, the pulse signals are converted into physical quantities of gamma photons, so as to achieve the purpose of gamma photon measurement.

[0036] Further, a crystal buffer layer 18 is provided between the crystal structure assembly and the crystal gland 20, and a crystal photon coupling layer 14 is provided between the crystal structure assembly and the crystal sealing glass window 13.

[0037] Further, the crystal structure assembly includes a crystal 16, a reflective layer 17, and a crystal housing 15, wherein: the crystal 16 is arranged inside the crystal housing 15; the reflective layer 17 is arranged in the cavity between the crystal 16 and the crystal housing 15; as Figure 5 shown, the top end of the crystal housing 15 passes through the crystal photon coupling layer 14 and is connected to the crystal sealing glass window 13, and the bottom end passes through the crystal buffer layer 18 and is connected to the crystal gland 20 through the crystal sealing gasket 19.

[0038] Specifically, when assembling the gamma photon absorption and transmission structure 01, first install the crystal sealing glass window 13 into the round hole of the crystal housing 15, then closely attach the crystal photon coupling layer 14 to the crystal sealing glass window 13, and at the same time closely attach the crystal 16 to the middle position of the crystal photon coupling layer 14. Pour the powdery reflective layer 17 into the cavity between the crystal 16 and the crystal housing 15, and after compacting the reflective layer 17, place the crystal sealing gasket 19 into the groove of the crystal housing 15. Finally, fasten the crystal gland 20 through the crystal buffer layer 18 and screws to realize the installation and fixation of the crystal structure assembly.

[0039] Further, a photoelectric coupling gasket 12 is provided between the first phototube fixing ring 10 and the crystal sealing glass window 13, and a phototube damping pad 8 is provided between the second phototube fixing ring 7 and the phototube assembly.

[0040] Further, as Figure 3-4As shown in the figure, the phototube assembly includes a phototube housing 9 and a photomultiplier tube 11. The photomultiplier tube 11 is sleeved and fixed inside the phototube housing 9 through a first phototube fixing ring 10 and a second phototube fixing ring 7.

[0041] Specifically, when assembling the photoelectric conversion structure 02, the uncured photoelectric coupling gasket 12 is poured onto the crystal sealing glass window 13. After reaching the curing time of the photoelectric coupling gasket 12, the first phototube fixing ring 10 is sleeved onto the phototube housing 9 in sequence, then the photomultiplier tube 11 is inserted into the first phototube fixing ring 10. At the same time, the second phototube fixing ring 7 is inserted into the annular gap formed between the photomultiplier tube 11 and the phototube housing 9. Then, the phototube shock-absorbing pad 8 is placed on the step at the wire outlet end of the photomultiplier tube 11. Finally, as Figure 7 shown in the figure, the phototube gland 6 is screwed tightly onto the phototube housing 9 to realize the installation and fixation of the phototube structure assembly.

[0042] Furthermore, as Figure 6 shown in the figure, a fixing sleeve 4 is arranged between the mounting seat 3 and the phototube gland 6. The fixing sleeve 4 is sleeved on the phototube gland 6, and the mounting seat 3 is arranged on the fixing sleeve 4 through a threaded connection.

[0043] Specifically, when assembling the electrical signal output structure 03, the fixing sleeve 4 is first sleeved onto the phototube gland 6, then the mounting seat 3 is screwed onto the fixing sleeve 4 through a thread. Finally, the support column 2 is fastened to the mounting seat 3 through a thread in sequence, and then the signal output lead 5 of the photomultiplier tube 11 is welded to the front-end electrical signal processing board 1, and at the same time, the front-end electrical signal processing board 1 is fixed to the support column 2 to realize the installation and fixation of the electrical signal output structure 03 assembly.

[0044] Furthermore, as Figure 8 shown in the figure, the crystal sealing glass window 13 is a "V"-shaped structure. The crystal sealing glass window 13 preferably adopts the design of a "V"-shaped structure, and a photoelectric coupling gasket 12 sealed with glue is arranged above the crystal sealing glass window 13, and the lower part adopts a rubber gasket sealing method, which reliably eliminates the problem that the crystal 16 is prone to deliquescence when stored in the atmospheric environment.

[0045] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A photoelectric sensor for gamma ray spectrum measurement, characterized in that: It includes a gamma photon absorption transmission structure, a photoelectric conversion structure and an electrical signal output structure, wherein: The gamma photon absorption and transmission structure comprises a crystal sealing glass window, a crystal structure component and a crystal pressure cover, wherein the crystal sealing glass window is arranged directly above the crystal structure component, and the crystal pressure cover is arranged directly below the crystal structure component; The photoelectric conversion structure comprises a first fixing ring of a photoelectric tube, a photoelectric tube assembly, a second fixing ring of a photoelectric tube and a photoelectric tube pressure cover, wherein the first fixing ring of the photoelectric tube is arranged directly above the crystal sealing glass window and is buckled below the photoelectric tube assembly, the second fixing ring of the photoelectric tube is buckled above the photoelectric tube assembly, and the photoelectric tube pressure cover is arranged directly above the second fixing ring of the photoelectric tube; The electrical signal output structure includes an electrical signal front-end processing board, a support column, a mounting seat and a signal output lead. The mounting seat is arranged directly above the photoelectric tube cover. The electrical signal front-end processing board is fixed to the mounting seat through the support column. One end of the signal output lead is connected to the photoelectric tube assembly, and the other end is connected to the electrical signal front-end processing board.

2. The photoelectric sensor for gamma spectroscopy measurement according to claim 1, characterized in that: A crystal buffer layer is arranged between the crystal structure component and the crystal pressure cover, and a crystal photon coupling layer is arranged between the crystal structure component and the crystal sealing glass window.

3. The photoelectric sensor for gamma spectroscopy measurement according to claim 2, characterized in that: The crystal structure assembly comprises a crystal, a reflective layer and a crystal shell, wherein: The crystal is arranged inside the crystal housing; The reflective layer is arranged in the cavity between the crystal and the crystal housing; The top end of the crystal housing passes through the crystal photon coupling layer and is connected to the crystal sealing glass window, and the bottom end passes through the crystal buffer layer and is connected to the crystal pressure cover through a crystal sealing gasket.

4. The photoelectric sensor for gamma spectroscopy measurement according to claim 3, characterized in that: A photoelectric coupling rubber pad is arranged between the first fixing ring of the photoelectric tube and the crystal sealing glass window, and a photoelectric tube vibration reduction pad is arranged between the second fixing ring of the photoelectric tube and the photoelectric tube assembly.

5. The photoelectric sensor for gamma spectrum measurement according to claim 4, characterized in that: The photoelectric tube assembly comprises a photoelectric tube housing and a photomultiplier tube. The photomultiplier tube is fixed inside the photoelectric tube housing through the first photoelectric tube fixing ring and the second photoelectric tube fixing ring buckle.

6. The photoelectric sensor for gamma spectrum measurement according to claim 5, characterized in that: A fixing sleeve is arranged between the mounting seat and the photoelectric tube pressure cover, the fixing sleeve is buckled on the photoelectric tube pressure cover, and the mounting seat is arranged on the fixing sleeve through threaded connection.

7. The photoelectric sensor for gamma spectrum measurement according to claim 6, characterized in that: The crystal sealed glass window is a "V" shaped structure.

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