Coding device and implementation method for D trigger function based on superstructure

Abstract

The invention discloses a superstructure-based D trigger function coding device, and relates to the technical field of electromagnetic functional devices. The coding device adopts a four-substrate stacked packaging framework, an upper substrate and a lower substrate are homogeneous magnetic material substrates with magnetic conduction characteristics, and a left substrate and a right substrate are light-transmitting electric conduction substrates; a magnetic dielectric layer of an asymmetric layered structure is arranged in a three-dimensional cavity of a four-substrate stacked packaging framework to form an optical D trigger function core area, and electromagnetic waves enter the device along the arrangement direction of the asymmetric layered structure. A specific coding function is realized by combining the synergistic effect of temperature and magnetic field parameters, and a logic state switching function of the D trigger is further formed through logic combination. According to the device, the tunable electromagnetic characteristic of the superstructure is combined with a digital logic circuit principle, and a novel design normal form is provided for a microwave frequency band programmable device.

Description

Technical Field

[0001] The present invention belongs to the technical field of electromagnetic wave modulation, and particularly relates to an encoding device with D flip-flop function based on a metasurface. The device constructs a tunable metasurface through magnetized plasma and a vanadium dioxide (VO2) phase change layer, establishes a binary "0" / "1" encoding logic based on the transmission characteristics presented by the incident direction of electromagnetic waves and the dynamic sensing and feature discrimination mechanism, and finally realizes the sequential logic function of a D flip-flop through multi-physical field regulation. Background Art

[0002] With the exponential growth of the future city's demand for data processing accuracy, transmission rate, and storage capacity, traditional electronic devices are gradually showing performance bottlenecks. As the core technology of modern communication systems, electromagnetic wave modulation has successfully achieved the efficient transmission of a large amount of information by precisely regulating the amplitude, frequency, or phase parameters of the carrier wave. In typical application scenarios such as real-time traffic regulation in intelligent transportation and multi-source data fusion in the city brain, although this technology has demonstrated powerful data transmission capabilities, when dealing with the increasingly complex ultra-large-scale data processing tasks in smart cities, the existing technology system still requires a breakthrough innovation.

[0003] Looking back at the evolution process of digital technology, circuit logic encoding has always been the underlying architecture for building the digital ecosystem. From the first-generation computers relying on vacuum tubes to construct Boolean logic gate circuits, to the transistor and integrated circuit revolution brought about by semiconductor technology, this basic technology has continuously expanded its application boundaries. In contemporary digital systems, its value is reflected in two dimensions: at the hardware level, from the instruction set architecture of the CPU to the addressing mechanism of the memory; in the communication field, from the relay control of electromechanical telephone switches to the beamforming algorithm of 5G base stations, circuit logic encoding has always been the core technology framework supporting the operation of the digital world. It should be particularly noted that although there are limitations such as large volume and high energy consumption, the logic operation paradigm established in the vacuum tube era still deeply affects the design philosophy of modern computing systems.

[0004] Although the performance of traditional electronic chips has currently approached the physical limit, there are still fundamental limitations in improving processing speed, expanding transmission capacity, and reducing energy consumption. Photon-based computing technologies exhibit unique potential, such as fast information transmission speed and the ability to carry more information through characteristics such as frequency and vibration direction. Metasurface materials with special structural designs can precisely regulate the propagation characteristics of electromagnetic waves. By using external physical quantities such as temperature and magnetic fields to precisely regulate the changes in electromagnetic wave transmission and further forming a D flip-flop function through logical combinations.

[0005] After searching, it was found that the Chinese patent with publication number CN119738975A disclosed a 3D light field display system with adjustable angular resolution on April 1, 2025. The structure includes micro-pitch LED, aperture LCD screen and high-resolution LCD screen. Using depth detection algorithm, light control coding algorithm, aperture coding algorithm and disparity map synthesis algorithm, the number of light rays emitted by different body pixels in different directions is accurately controlled, significantly improving the user's 3D visual experience. .

[0006] In summary, the main problems faced by traditional circuit logic coding devices are concentrated in dimensions such as limited coding rate and insufficient scalability of modulation band. These technical bottlenecks seriously restrict the improvement of its performance in modern information processing systems and the expansion of diversified application scenarios. In response to the above challenges, this study proposed an innovative coding device based on the D-flip-flop function of a meta-structure, and proposed a breakthrough solution through a physical coding system constructed by a magnetized plasma periodic structure. The device shows significant advantages in key performance indicators such as tunability and high-speed transmission characteristics, opening up an innovative technical path for the physical realization of electromagnetic wave logic coding.

[0007] Top of form Bottom of the form Invention content: In order to break through the bottleneck of the existing technology, the present invention proposes an encoding device based on the D flip-flop function of the superstructure, which has the characteristics of magnetic-temperature dual parameter control. The device realizes dynamic control of the transmission characteristics in the frequency band of 15.5 GHz~16.0 GHz. When the electromagnetic wave is incident at a direction deviating from the normal by 70°, its transmission spectrum dynamically responds to the coordinated changes of the magnetic field intensity and the temperature parameter. By establishing a magnetic-temperature dual physical field mapping mechanism: the temperature of vanadium dioxide (VO2) is set to 30 ℃ as a low-level input state (corresponding to a magnetic field intensity of 0.2 T), at this time, the transmission spectrum has no characteristic peak and is characterized as a logic "0"; when the VO2 temperature rises to 85 ℃ high-level input state, the resonance peak is shifted at a high frequency and the characteristic peak of the transmission spectrum appears, which represents a logic "1". By precisely controlling the VO2 temperature change timing to construct the sequential logic input, combined with the detection of the visible and invisible state of the characteristic peak of the transmission spectrum, the sequential logic operation function of the D flip-flop is realized. This scheme expands the realization dimension of optical encoding and provides a new paradigm for the design of electromagnetic wave logic devices.

[0008] The present invention is achieved through the following technical solutions: A coding device based on the D flip-flop function of a superstructure adopts a four-way packaging substrate structure: the upper and lower substrates are homogeneous magnetic composite substrates, and the left and right substrates are AZO transparent conductive substrates. The core functional layer is composed of an asymmetric periodic layered structure, including alternating units of silicon dioxide medium and magnetized plasma, with vanadium dioxide layers embedded in between. Through the magneto-optical coupling effect of magnetized plasma and magnetic substrate, combined with the temperature-controlled phase change characteristics of VO2, dynamic regulation of electromagnetic wave transmission characteristics is synergistically achieved.

[0009] Further, the dielectric layer adopts A(A - B) N -C-(A - B) N layered arrangement structure, in which the silica layer (A layer) and the plasma thin film layer (B layer) form an electromagnetic bandgap structure through periodic alternating arrangement, and a vanadium dioxide layer (C layer) is inserted in the middle. This configuration constructs a bandgap basic framework through the periodic stacking of A - B units, and the vanadium dioxide layer realizes the dynamic modulation of the electromagnetic wave transmission behavior through its temperature - tunable characteristics.

[0010] Further, the refractive index of silica has good stability in the microwave frequency band and is represented by a constant refractive index rate n a = 1.46, and the thickness parameter is d a = 15 mm. Arranged periodically in a specific order, it has a specific impact on electromagnetic waves.

[0011] Further, the plasma thin film layer adopts the Drude model to construct a dielectric constant characterization system, and its physical thickness is optimized to 6.5 mm. This model accurately characterizes the magnetic - field - dependent characteristics of magnetized plasma in the microwave frequency band through the configuration of electron density and collision frequency parameters, and realizes the quantitative description of the dielectric parameters of magnetized plasma thin films and the analysis of dynamic response characteristics.

[0012] Further, each vanadium dioxide layer is constructed by using the Drude - Lorentz composite dielectric model, and the thickness of each functional layer is accurately set to 1.5 mm. Through the synergistic effect of the gradient parameter configuration of the film layer thickness and the composite dielectric model, the multi - physical - field collaborative regulation of electromagnetic wave transmission characteristics is realized in the microwave frequency band, ensuring that the device has a stable transmission characteristic response and reliable function realization in the target frequency domain.

[0013] The present invention also provides a method for realizing an encoding device with the function of a D - flip - flop based on a metamaterial. The encoding device adopts a four - substrate stacked packaging architecture, where the upper and lower substrates are made of homogeneous magnetic materials with magnetic permeability characteristics, and the left and right substrates are wave - transmitting conductive substrates; in the three - dimensional cavity of the four - substrate stacked packaging architecture, a magnetic dielectric layer with an asymmetric layered structure is arranged to form the core area of the optical D - trigger function, and electromagnetic waves are incident into the device along the arrangement direction of the asymmetric layered structure; the realization method is as follows In the frequency range of 15.5 GHz to 16.0 GHz, when electromagnetic waves are incident from the air medium at a direction deviating 70° from the normal of the left substrate, the electromagnetic response of the encoding device to the changes in temperature field and magnetic field parameters shows significant difference characteristics; By establishing the corresponding relationship between temperature change and time series, and combining the dynamic control effect of the magnetic field regulation device on the transmission characteristics, a dual - physical - field collaborative regulation mechanism is constructed; Under the condition of electromagnetic wave incidence, it is defined that the appearance of a characteristic peak in the system transmission spectrum is binary code "0", and the disappearance of the characteristic peak is code "1". Based on the specific combination regulation of the temperature gradient field and the magnetic induction intensity, the dynamic switching of binary coding is realized by detecting the presence or absence of the transmission peak, and finally the logic function of the D flip-flop is realized through the cooperative regulation mechanism of temperature and magnetic field.

[0014] Compared with the prior art, the present invention has the following technical effects: The present invention utilizes the responses of magnetized plasma and VO2 to magnetic field and temperature respectively to dynamically adjust the transmission characteristics of electromagnetic waves, which can be used as a criterion for judging logical values.

[0015] The present invention constructs a transmission peak feature recognition mechanism through the resonant peak of the VO2 defect state. Based on the regulation of temperature parameters, the resonant peak frequency shift effect of VO2 can be induced, making the transmission characteristics show significant tunability.

[0016] The core structure of the present invention adopts a layered metamaterial modular stacking configuration, which has the characteristics of high spatial integration and process compatibility, providing a feasibility guarantee for the large-scale industrial manufacturing of devices. Brief Description of the Drawings

[0017] Figure 1 It is an overall schematic diagram of an encoding device with a D flip-flop function based on metamaterials according to an embodiment of the present invention; Figure 2 It is a logical circuit analogy diagram of an encoding device with a D flip-flop function based on metamaterials according to an embodiment of the present invention; Figure 3 It is a logical signal diagram of an encoding device with a D flip-flop function based on metamaterials according to an embodiment of the present invention; Figure 4 It is the logical value "0" of an encoding device with a D flip-flop function based on metamaterials at 30 °C low level and magnetic field of 0.2 T according to an embodiment of the present invention; Figure 5 It is the logical value "1" of an encoding device with a D flip-flop function based on metamaterials at 30 °C low level and magnetic field of 0.39 T according to an embodiment of the present invention; Figure 6 It is the logical value "0" of an encoding device with a D flip-flop function based on metamaterials at 85 °C high level and magnetic field of 0.3 T according to an embodiment of the present invention; Figure 7 It is the logical value "1" of an encoding device with a D flip-flop function based on metamaterials at 85 °C high level and magnetic field of 0.435 T according to an embodiment of the present invention; Figure 8The simulation functional diagram of an encoding device with the function of a D flip-flop based on a metasurface according to an embodiment of the present invention; Figure 9 The electromagnetic wave incident situation diagram of an encoding device with the function of a D flip-flop based on a metasurface according to an embodiment of the present invention.

[0018] In the figure: 1 - Layered metasurface with quasi-periodic arrangement; 2 - Boron nitride (BN); 3 - Polytetrafluoroethylene ((C2F4) n ); 4 - Silicon carbide (SiC); 5 - Aluminum nitride (AlN); 6 - Silicon dioxide layer; 7 - Plasma thin film layer; 8 - Vanadium dioxide layer; 9 - Magnetic substrate; 10 - Transparent conductive substrate; 11 - Aluminum oxide (Al2O3). Detailed implementation manners

[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0020] In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication with each other; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0021] In the present invention, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the direct contact of the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over", and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "beneath", and "under" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely indicates that the horizontal height of the first feature is lower than that of the second feature.

[0022] Those skilled in the art can understand that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as the general understanding of those of ordinary skill in the field to which the present invention belongs. It should also be understood that terms such as those defined in a general dictionary should be understood to have a meaning consistent with their meaning in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless defined as herein.

[0023] The present invention discloses an encoding device based on the D - flip - flop function of a metasurface, and its functional layer system is composed of a silica layer 6, a plasma thin - film layer 7, and a vanadium dioxide layer 8. Based on the magnetic - temperature dual - physical - field collaborative regulation mechanism, the functions of dynamically sensing the characteristic peak of the transmission spectrum and logical discrimination are realized.

[0024] In the working state of the device, when the frequency of the incident electromagnetic wave is in the range of 15.5 GHz to 16.0 GHz and the incident angle is 70°, the system exhibits the following encoding characteristics: when the temperature parameter is set to 30 °C and the magnetic field strength is 0.2 T, there is no characteristic - peak response in the system transmission spectrum, which is determined as logic "0"; when the magnetic field is enhanced to 0.39 T, the generation of the transmission characteristic peak is characterized as logic "1". When the temperature is increased to 85 °C and the same encoding mechanism is maintained, a magnetic field strength of 0.3 T corresponds to the logic "0" state, and the appearance of the transmission peak under the condition of 0.435 T is determined as logic "1".

[0025] As Figure 1 shown, the dielectric layer adopts an A(A - B) N -C-(A - B) N quasi - periodic layered arrangement structure. When the number of periods N = 3 is set, a three - period stacked configuration of the A - B unit (A - B - A - B - A - B) is formed. The plasma thin - film layer 7 constructs a dielectric - parameter characterization system based on the Drude model, and its thickness is optimized to 6.5 mm; the refractive index of the silica layer 6 is maintained at 1.46, and the layer thickness is designed to be 15 m; the thickness of the vanadium dioxide layer 8 is precisely controlled to be 1.5 mm, and the Drude - Lorentz composite dielectric model is used to realize the temperature - control characteristic regulation. The physical parameters of each functional layer are optimized and matched to jointly realize the regulation of the electromagnetic - wave transmission characteristics.

[0026] As Figure 2 shown, the circuit topology of the D - flip - flop is presented, and the circuit operates based on the clock - signal driving mechanism. A mapping relationship between the temperature parameter and the clock signal is established: 30 °C represents the low - level state of the clock, and 85 °C corresponds to the high - level state. The output response is controlled by the logical state of the input port D, and complementary logical ports Q and Q - bar are configured at the output end to realize the bistable logical output function.

[0027] As Figure 3For the shown logic signal diagram, when the level of the clock signal is "01010101010", the output state Q is "00000111100".

[0028] As Figure 4 shown, when the frequency of the electromagnetic wave is between 15.5 GHz and 16.0 GHz, the temperature is 30 °C, and the magnetic field is B0 = 0.2 T, the system transmission spectrum has no characteristic peak response, representing a coding value of "0".

[0029] As Figure 5 shown, it represents that the magnetic field is B1 = 0.39 T, and the system transmission spectrum has a characteristic peak response, representing a coding value of "1".

[0030] As Figure 6 shown, the temperature is 85 °C, the magnetic field is B3 = 0.3 T, and the system transmission spectrum has no characteristic peak response, representing a coding value of "0".

[0031] As Figure 7 shown, when the D flip - flop works, the magnetic field is B4 = 0.435 T, and the system transmission spectrum has a characteristic peak response, representing a coding value of "1".

[0032] As Figure 8 shown, the proposed functional diagram of the D flip - flop includes an input port composed of boron nitride 2, an output port composed of polytetrafluoroethylene 3, a temperature control port composed of silicon carbide 4, a magnetic induction intensity control port composed of aluminum nitride 5, and an aluminum oxide 11 substrate; the main function is a quasi - periodic arranged layered metamaterial 1.

[0033] As Figure 9 shown, for the working state of the main structure, the incident direction of the electromagnetic wave is along the + x axis direction. The internal layers of the medium are respectively represented as a silica layer 6; a plasma thin film layer 7; a vanadium dioxide layer 8; a magnetic substrate 9; a transparent conductive substrate 10.

[0034] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention.

Claims

1. A coding device based on the D flip-flop function of a superstructure, characterized in that: The encoding device adopts a four-substrate stacked packaging architecture, in which the upper and lower substrates are homogeneous magnetic material substrates with magnetic conductivity, and the left and right substrates are wave-transmitting conductive substrates; in the three-dimensional cavity of the four-substrate stacked packaging architecture, a magnetic medium layer with an asymmetric layered structure is arranged to form an optical D trigger function core area, and electromagnetic waves are incident on the inside of the device along the arrangement direction of the asymmetric layered structure.

2. The encoding device based on the D flip-flop function of the superstructure according to claim 1, characterized in that: The magnetic medium layer is composed of a silicon dioxide layer, a plasma film layer, and a vanadium dioxide layer according to A ( AB) N -C-(AB) N It is composed of a periodic asymmetric arrangement, where N is the number of periods of the dielectric material arrangement.

3. The encoding device based on the D flip-flop function of the superstructure according to claim 2, characterized in that: The refractive index of the silicon dioxide layer n a =1.46, dielectric layer thickness d a =15 mm.

4. The encoding device based on the D flip-flop function of the superstructure according to claim 2, characterized in that: The plasma film layer is subjected to an external magnetic field, the magnetized plasma adopts the Drude model, the collision frequency of the plasma is 0.0004 times the cyclotron frequency, and the thickness d b =6.5 mm.

5. The encoding device based on the D flip-flop function of the superstructure according to claim 2, characterized in that: The thickness of the vanadium dioxide layer is 1.5 mm. Based on the Drude-Lorentz composite dielectric model, a periodic logic level mapping with dual temperature thresholds of 30°C and 85°C is established.

6. The encoding device based on the D flip-flop function of the superstructure according to claim 1, characterized in that: The upper and lower substrates are made of magnetic composite materials, and the left and right substrates are AZO transparent conductive substrates; the thickness of each substrate is 1mm.

7. A method for implementing a coding device based on a D flip-flop function of a superstructure, characterized in that: The encoding device adopts a four-substrate stacking packaging architecture, in which the upper and lower substrates are made of homogeneous magnetic materials with magnetic conductivity, and the left and right substrates are wave-transmitting conductive substrates; a magnetic medium layer with an asymmetric layered structure is arranged in the three-dimensional cavity of the four-substrate stacking packaging architecture to form an optical D trigger function core area, and electromagnetic waves are incident on the inside of the device along the arrangement direction of the asymmetric layered structure; the implementation method is as follows: In the frequency range of 15.5 GHz to 16.0 GHz, when the electromagnetic wave is incident from the air medium at a direction 70° away from the normal line of the left substrate, the electromagnetic response of the encoding device to the changes in temperature field and magnetic field parameters shows significantly different characteristics; By establishing the corresponding relationship between temperature change and time series, combined with the dynamic control of the transmission characteristics by the magnetic field control device, a dual physical field coordinated control mechanism is constructed; Under the condition of electromagnetic wave incidence, the appearance of a characteristic peak in the system transmission spectrum is defined as binary code "0", and the disappearance of the characteristic peak is defined as code "1"; Based on the specific combined regulation of temperature gradient field and magnetic induction intensity, dynamic switching of binary code is achieved by detecting the presence or absence of transmission peak, and finally the logical function of the D flip-flop is realized through the coordinated regulation mechanism of temperature and magnetic field.

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