Thin film, photoelectric device and preparation method thereof, and display device

Abstract

The invention discloses a thin film, a photoelectric device, a preparation method of the photoelectric device and a display device. The thin film comprises zirconium phosphate and first perovskite quantum dots. Zirconium phosphate in the thin film has a layered structure, a substrate is provided for perovskite growth, and perovskite nanoparticles can be attached to each layer of zirconium phosphate for growth, so that perovskite has a highly ordered and compact layer structure, defects are greatly reduced, and the device efficiency is further improved.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a thin film, an optoelectronic device, a preparation method thereof, and a display device. Background Art

[0002] Perovskite materials have rich compositions, structures, and properties, providing broad development space for the research of optoelectronic devices. Especially in the field of light-emitting diodes, perovskite materials are considered potential light-emitting materials due to their excellent optical properties, tunable band gaps, and high quantum efficiencies.

[0003] Existing perovskite thin films still have defects. Summary of the Invention

[0004] In view of this, this application provides a thin film, aiming to improve the defects of the perovskite layer of existing optoelectronic devices and enhance the device efficiency.

[0005] An embodiment of this application is implemented as follows. A thin film includes zirconium phosphate and first perovskite quantum dots.

[0006] Optionally, in some embodiments of this application, it includes a first sublayer and a second sublayer. The material of the first sublayer includes the first perovskite quantum dots and the zirconium phosphate, and the material of the second sublayer includes second perovskite quantum dots.

[0007] Optionally, in some embodiments of this application, the zirconium phosphate includes one or more of α-Zr(HPO4)2, Zr(PO4)(H2PO4), θ-Zr(HPO4)2; and / or

[0008] The thickness of the first sublayer is 80 - 100 nm; and / or

[0009] The refractive index of the first sublayer is 1.8 - 2.2; and / or

[0010] The light transmittance of the first sublayer is above 88%; and / or

[0011] The average particle size of the second perovskite quantum dots is 9 - 13 nm; and / or

[0012] The average particle size of the first perovskite quantum dots is 15 - 20 nm.

[0013] Correspondingly, this application also provides an optoelectronic device, including an anode, an active layer, and a cathode stacked. The active layer includes zirconium phosphate and first perovskite quantum dots.

[0014] Optionally, in some embodiments of the present application, the active layer includes a first sub-layer and a second sub-layer, the first sub-layer is disposed between the anode and the second sub-layer; the second sub-layer includes second perovskite quantum dots, and the first sub-layer includes the zirconium phosphate and the first perovskite quantum dots; and / or

[0015] The anode is a carbon electrode, wherein the material of the carbon electrode includes one or more of carbon black, graphite, activated carbon, carbon nanotubes, graphene, and carbon fiber; and / or

[0016] The thickness of the carbon electrode is 130-170 nm; and / or

[0017] The material of the cathode includes one or more of metals, carbon materials, and metal oxides. Among them, the metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxides include metal oxide electrodes or composite electrodes with metals sandwiched between doped or undoped transparent metal oxides. The materials of the metal oxide electrodes include one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, and the composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0018] Optionally, in some embodiments of the present application, the zirconium phosphate includes one or more of α-Zr(HPO4)2, Zr(PO4)(H2PO4), and θ-Zr(HPO4)2; and / or

[0019] The thickness of the first sub-layer is 80-100 nm; and / or

[0020] The refractive index of the first sub-layer is 1.8-2.2; and / or

[0021] The light transmittance of the first sub-layer is above 88%; and / or

[0022] The average particle size of the second perovskite quantum dots is 9-13 nm; and / or

[0023] The average particle size of the first perovskite quantum dots is 15-20 nm.

[0024] Optionally, in some embodiments of the present application, the optoelectronic device further includes an electronic functional layer, and the electronic functional layer is disposed between the cathode and the second sub-layer.

[0025] Optionally, in some embodiments of the present application, the second perovskite quantum dot and the first perovskite quantum dot are each independently selected from one or more of AMX3 and BMX3, where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the following, X is a halogen anion selected from Cl - , Br - , I - and one or more of the following, B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2; and / or

[0026] The material of the electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include one or more of metal oxides, doped metal oxides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5; the metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the dopants in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor materials include one or more of InP, GaP; the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; the organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds.

[0027] Correspondingly, the present application further provides a method for preparing an optoelectronic device, including the following steps:

[0028] Providing a light-emitting device preform, the light-emitting device preform including a cathode;

[0029] Providing a perovskite quantum dot solution, the perovskite quantum dot solution including second perovskite quantum dots, and disposing the perovskite quantum dot solution on the light-emitting device preform to form a perovskite prelayer;

[0030] Disposing zirconium phosphate hydrate on the perovskite prelayer and reacting to obtain a second sublayer and a first sublayer, wherein the second sublayer includes second perovskite quantum dots, the first sublayer includes zirconium phosphate and first perovskite quantum dots, and the first sublayer is located on a side of the second sublayer away from the light-emitting device preform;

[0031] Forming an anode on the first sublayer.

[0032] Optionally, in some embodiments of the present application,

[0033] The step of disposing zirconium phosphate hydrate on the perovskite prelayer and reacting to obtain a second sublayer and a first sublayer specifically includes:

[0034] Providing zirconium phosphate hydrate and a first solvent, mixing to obtain a zirconium phosphate hydrate solution;

[0035] Disposing the zirconium phosphate hydrate solution on the perovskite layer preform and performing a first heat treatment to obtain a second sublayer and a first sublayer.

[0036] Optionally, in some embodiments of the present application, the zirconium phosphate hydrate includes one or more of α-Zr(HPO4)2·H2O (α-ZrP), Zr(PO4)(H2PO4)·2H2O (γ-ZrP), θ-Zr(HPO4)2·6H2O (θ-Zr); and / or

[0037] The thickness of the first sublayer is 80-100 nm; and / or

[0038] The first solvent includes one or more of acetone, N,N-dimethylformamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone, pyridine, tetrahydrofuran, toluene, ethylene glycol, methanol, ethanol, 1-propanol, dichloromethane, o-xylene; and / or

[0039] The mass concentration of the zirconium phosphate hydrate solution is 0.05-1 mg / mL; and / or

[0040] The temperature of the first heat treatment is 120 to 130 °C, and the time of the first heat treatment is 20 to 40 min.

[0041] Optionally, in some embodiments of the present application, the anode is a carbon electrode, and forming the anode on the first sublayer includes:

[0042] Providing a carbon material and a second solvent, mixing them to obtain a carbon material solution;

[0043] Setting the carbon material solution on the first sublayer and performing a second heat treatment to obtain a carbon electrode.

[0044] Optionally, in some embodiments of the present application, the material of the carbon electrode includes one or more of carbon black, graphite, activated carbon, carbon nanotubes, graphene, and carbon fiber; and / or

[0045] The thickness of the carbon electrode is 130 to 170 nm; and / or

[0046] The second solvent includes one or more of acetone, N,N-dimethylformamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone, pyridine, tetrahydrofuran, toluene, ethylene glycol, methanol, ethanol, 1-propanol, dichloromethane, and o-xylene; and / or

[0047] The temperature of the second heat treatment is 100 to 120 °C, and the time of the second heat treatment is 10 to 30 min.

[0048] Optionally, in some embodiments of the present application, the light-emitting device preform includes a stacked cathode and an electron functional layer, and setting the perovskite quantum dot solution on the light-emitting device preform includes setting the perovskite quantum dot solution on the electron functional layer.

[0049] Correspondingly, the present application also provides a display device, and the display device includes the above-mentioned optoelectronic device.

[0050] The zirconium phosphate in the thin film of the present application has a layered structure, which provides a substrate for the growth of perovskite. Perovskite nanoparticles will grow on each layer of zirconium phosphate, so that the perovskite has a highly ordered and dense layer structure, and the defects are greatly reduced. Description of the Drawings

[0051] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0052] Figure 1 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0053] Figure 2 It is a flowchart of a preparation method of an optoelectronic device provided by an embodiment of the present application;

[0054] Reference numerals:

[0055] Optoelectronic device 100; cathode 10; second sublayer 20; first sublayer 30; anode 40; electron functional layer 50. Detailed implementation manners

[0056] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0058] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the contour of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0059] In the present application, "and / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B may be singular or plural.

[0060] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or more", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0061] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0062] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0063] Water can cause the decomposition of perovskite materials. The principle is that after water comes into contact with perovskite materials, it will first induce a perovskite reaction on the surface to generate a highly reactive metastable intermediate phase. Due to the high reactivity, the metastable intermediate phase will further transform into a δ-phase perovskite or decompose into PbI2. However, if further decomposition can be suppressed, the metastable intermediate phase can be induced to undergo secondary crystal growth. Zirconium phosphate has a layered structure and is arranged in an orderly manner. It can be processed in solution, and its own crystal water can induce perovskite to generate a metastable intermediate phase.

[0064] Currently, traditional organic hole functional layer materials used in perovskite light-emitting diodes, such as 2,2",7,7"-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD) and metal electrodes such as Au and Ag, increase the manufacturing cost of the device. Moreover, the hydrophilic salts in the hole functional layer materials and the metal electrodes will be corroded by the diffused halogens, resulting in a decrease in the stability of the device.

[0065] Carbon materials are chemically inert and will not be corroded by diffused halogens even when in direct contact with the perovskite layer; carbon materials have natural hydrophobicity and can avoid the influence of external moisture during the operation of PeLEDs devices; carbon materials have high electrical conductivity and have a good effect on the transport of carriers.

[0066] The technical solution of this application is as follows:

[0067] In a first aspect, please refer to Figure 1 , an optoelectronic device 100 provided by an embodiment of this application includes a cathode 10, an active layer, and an anode 40 arranged in a stacked manner. The active layer includes a first sub-layer 30 and a second sub-layer 20. The first sub-layer 30 is arranged between the anode 40 and the second sub-layer 20; the second sub-layer 20 includes second perovskite quantum dots, and the first sub-layer 30 includes zirconium phosphate and first perovskite quantum dots.

[0068] In the optoelectronic device 100 provided by this application, the zirconium phosphate in the first sub-layer has a layered structure, which provides a substrate for the growth of perovskite. Perovskite nanoparticles will grow on each layer of zirconium phosphate, so that the perovskite in the first sub-layer has a highly ordered and dense layer structure, and the defects are greatly reduced, thereby improving the device efficiency.

[0069] In some embodiments, the anode 40 is a carbon electrode.

[0070] This application uses a carbon electrode to replace the hole functional layer and the metal electrode layer of the optoelectronic device 100. It has a good transport effect on carriers, will not be corroded by diffused halogens, and will not be affected by external moisture, which can improve the long-term stability of the device; the film treated with zirconium phosphate hydrate can improve the interface contact and energy level alignment between the perovskite layer and the carbon electrode, thereby improving the efficiency of the carbon electrode optoelectronic device 100.

[0071] In some embodiments, the material of the carbon electrode includes one or more of carbon black, graphite, activated carbon, carbon nanotubes, graphene, and carbon fiber.

[0072] In some embodiments, the thickness of the carbon electrode is 130-170 nm.

[0073] In some embodiments, the zirconium phosphate includes one or more of α-Zr(HPO4)2·H2O (α-ZrP), Zr(PO4)(H2PO4)·2H2O (γ-ZrP), and θ-Zr(HPO4)2·6H2O (θ-Zr).

[0074] In some embodiments, the thickness of the first sub-layer 30 is 80-100 nm.

[0075] In some embodiments, the refractive index of the first sub-layer 30 is 1.8-2.2. For example, it can be 1.82, 1.85, 1.87, 1.9, 1.92, 1.95, 1.97, 2.0, 2.02, 2.05, 2.07, 2.1, 2.12, 2.15, 2.17, etc. Within this refractive index range, the carbon electrode can have high light transmittance and high conductivity.

[0076] In some embodiments, the light transmittance of the first sub-layer 30 is above 88%. For example, it can be 89%, 89.5%, 90%, 90.5%, 91%, 91.5%, 92%, 92.5%, 93%, 93.5%, 94%, 94.5%, 95%, etc. Within this light transmittance range, the carbon electrode has a high refractive index and high conductivity.

[0077] In some embodiments, the second perovskite quantum dot and the first perovskite quantum dot are each independently selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or one or more of the above, and X is a halogen anion selected from Cl - , Br - , I - or one or more of the above. The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+, where n ≥ 2, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , or one or more of the following, X is a halogen anion selected from Cl - , Br - , I - , or one or more of the following.

[0078] In some embodiments, the average particle size of the second perovskite quantum dots is 9 - 13 nm, for example, it can be 9.5 nm, 10 nm, 10.5 nm, 11 nm, 11.5 nm, 12 nm, 12.5 nm, etc.

[0079] In some embodiments, the average particle size of the first perovskite quantum dots is 15 - 20 nm, for example, it can be 15.5 nm, 16 nm, 16.5 nm, 17 nm, 17.5 nm, 18 nm, 18.5 nm, 19 nm, 19.5 nm, etc.

[0080] In some embodiments, the thickness of the second sub - layer 20 is 150 - 170 nm, for example, it can be 152 nm, 154 nm, 156 nm, 158 nm, 160 nm, 162 nm, 164 nm, 166 nm, 168 nm, etc.

[0081] In some embodiments, the optoelectronic device 100 further includes an electron functional layer 50, and the electron functional layer 50 is disposed between the cathode 10 and the second sub - layer 20.

[0082] In some embodiments, the electron functional layer 50 includes one or more of an electron injection layer and an electron transport layer.

[0083] In some embodiments, the material of the electronic functional layer 50 includes one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include one or more of metal oxides, doped metal oxides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, and the dopants in the doped metal oxides include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS. The organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0084] In some embodiments, the cathode 10 includes one or several of metals, carbon materials, and metal oxides. The metals include one or several of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The carbon materials include one or several of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides. The materials of the metal oxide electrodes include one or several of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrodes include one or several of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Herein, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including a sequentially laminated AZO layer, Ag layer, and AZO layer.

[0085] In a second aspect, please refer to Figure 2 , embodiments of the present application further provide a method for manufacturing an optoelectronic device 100, including:

[0086] S11. Provide a light-emitting device preform, where the light-emitting device preform includes a cathode 10;

[0087] S12. Provide a perovskite quantum dot solution, where the perovskite quantum dot solution includes second perovskite quantum dots, and dispose the perovskite quantum dot solution on the light-emitting device preform to form a perovskite prelayer;

[0088] S13. Dispose zirconium phosphate hydrate on the perovskite prelayer, so that the second perovskite quantum dots in contact with the zirconium phosphate hydrate on the perovskite prelayer react with the zirconium phosphate hydrate and recrystallize to form a first sublayer containing first perovskite quantum dots and zirconium phosphate. The second perovskite quantum dots in the perovskite prelayer that are not in contact with the zirconium phosphate hydrate do not recrystallize and constitute a second sublayer;

[0089] S14. Form an anode 40 on the first sublayer.

[0090] In the manufacturing method of the optoelectronic device 100 provided by this application, by introducing micron-scale zirconium phosphate hydrate to treat the thin film, the surface of the nanoscale perovskite thin film is in heterogeneous contact with the micron-scale zirconium phosphate hydrate, immediately triggering the heterogeneous nucleation growth of the intermediate phase of the perovskite material, that is, secondary crystallization. Under this condition, larger grains are formed in the thickness direction of the perovskite thin film. Due to the reduction of grain boundaries, surface defects are repaired; moreover, perovskite nanoparticles will grow on each layer of zirconium phosphate, thereby forming a first sublayer of perovskite and zirconium phosphate. The perovskite in the first sublayer has a highly ordered and dense layer structure, greatly reducing defects, and thus improving device efficiency.

[0091] In the S11:

[0092] In some embodiments, the light-emitting device preform includes a stacked cathode 10 and an electron functional layer 50, and disposing the perovskite quantum dot solution on the light-emitting device preform includes disposing the perovskite quantum dot solution on the electron functional layer 50.

[0093] In the S13:

[0094] In some embodiments, the method for forming the second sublayer 20 and the first sublayer 30 can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrodeposition, coprecipitation. Physical methods include physical coating methods and solution methods. Among them, physical coating methods include: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating, etc.

[0095] In some embodiments, the zirconium phosphate hydrate includes one or more of α-Zr(HPO4)2·H2O (α-ZrP), Zr(PO4)(H2PO4)·2H2O (γ-ZrP), and θ-Zr(HPO4)2·6H2O (θ-Zr).

[0096] In some embodiments, the thickness of the first sub-layer 30 is 80 - 100 nm.

[0097] In at least one embodiment, the method of disposing the zirconium phosphate hydrate on the perovskite pre-layer and reacting to obtain the second sub-layer 20 and the first sub-layer 30 is a solution method, including:

[0098] S131. Provide the zirconium phosphate hydrate and a first solvent, and mix them to obtain a zirconium phosphate hydrate solution;

[0099] S132. Dispose the zirconium phosphate hydrate solution on the perovskite pre-layer and perform a first heat treatment to obtain the second sub-layer 20 and the first sub-layer 30.

[0100] In S131:

[0101] In some embodiments, the solvent includes one or more of acetone, N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methyl-2-pyrrolidone (NMP), pyridine, tetrahydrofuran (THF), toluene, ethylene glycol, methanol, ethanol, 1-propanol, dichloromethane, and o-xylene.

[0102] In some embodiments, the mass concentration of the zirconium phosphate hydrate solution is 0.05 - 1 mg / mL. For example, it can be 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, etc. Within this concentration range, the dispersion of the zirconium phosphate hydrate can be promoted, and the film-forming property of the zirconium phosphate hydrate solution is good.

[0103] In S132:

[0104] In some embodiments, the temperature of the first heat treatment is 120 to 130 °C, for example, it can be 121 °C, 122 °C, 123 °C, 124 °C, 125 °C, 126 °C, 127 °C, 128 °C, 129 °C, etc. The time of the first heat treatment is 20 to 40 min, for example, it can be 22 min, 24 min, 26 min, 28 min, 30 min, 32 min, 34 min, 36 min, 38 min, etc. In this way, the zirconium phosphate hydrate can form a dense and highly aligned layered structure film, which is beneficial to the secondary crystallization of the metastable intermediate phase, and the thickness of the treated perovskite quantum film is uniform, without affecting the carrier transport.

[0105] In the S14:

[0106] In some embodiments, the anode 40 is a carbon electrode, and the method for forming the carbon electrode can be realized by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, successive ionic layer adsorption and reaction, anodic oxidation, electrodeposition, coprecipitation. Physical methods include physical coating methods and solution methods. Among them, physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.; solution methods can be spin coating method, printing method, inkjet printing method, blade coating method, printing method, dip coating method, immersion method, spraying method, roller coating method, casting method, slot die coating method, and bar coating method, etc.

[0107] In at least one embodiment, the method for forming the carbon electrode is a solution method, including:

[0108] Providing a carbon material and a second solvent, mixing them to obtain a carbon material solution;

[0109] Setting the carbon material solution on the first sub-layer 30 and performing a second heat treatment to obtain a carbon electrode.

[0110] In some embodiments, the second solvent includes one or more of acetone, N,N-dimethylformamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone, pyridine, tetrahydrofuran, toluene, ethylene glycol, methanol, ethanol, 1-propanol, dichloromethane, and o-xylene.

[0111] In some embodiments, the temperature of the second heat treatment is 100-120 °C, for example, it can be 102 °C, 104 °C, 106 °C, 108 °C, 110 °C, 112 °C, 114 °C, 116 °C, 118 °C, etc. The time of the second heat treatment is 10-30 min, for example, it can be 12 min, 14 min, 16 min, 18 min, 20 min, 22 min, 24 min, 26 min, 28 min, etc. Thus, the carbon material can form a dense and uniform electrode layer with low defects on its surface and inside, and can efficiently transfer carriers.

[0112] In some embodiments, the material of the carbon electrode includes one or more of carbon black, graphite, activated carbon, carbon nanotubes, graphene, and carbon fiber.

[0113] In some embodiments, the thickness of the carbon electrode is 130-170 nm.

[0114] In a third aspect, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device 100.

[0115] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0116] The following specifically illustrates the present application through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0117] Example 1

[0118] This embodiment provides a film, and the preparation method is as follows:

[0119] Mix 0.461 g of PbI2, 0.172 g of formamidinium hydroiodide (FAI), 0.0105 g of methylammonium chloride (MACl), and 0.104 g of CsI in 0.5 mL of DMSO, and stir overnight at 60 °C to obtain a perovskite precursor solution;

[0120] Use a pipette to aspirate the perovskite precursor solution and drop it on the electronic functional layer. First, spin-coat it at 1000 rpm for 12 s, then spin-coat it at 3000 rpm for 10 s, and after spin-coating at 1000 rpm for 2 s, blow out a heat flow of 100 °C with a hot air gun until the perovskite quantum dot film turns completely black. Then, anneal it on a hot plate at 185 °C for 17 min, and then anneal it at 130 °C for 10 min to form a perovskite prefabricated layer with a thickness of 160 nm;

[0121] Dissolve α-Zr(HPO4)2·H2O in acetone to obtain a zirconium phosphate hydrate solution of 0.55 mg / mL. Drop the zirconium phosphate hydrate solution on the perovskite prefabricated layer, spin-coat it at 3000 rpm for 30 s, and then anneal it at 125 °C for 30 min to form a second sub-layer with a thickness of 160 nm and a first sub-layer with a thickness of 87 nm, obtaining a film.

[0122] Example 2

[0123] This example is basically the same as Example 1, except that in this example, the perovskite precursor solution is formed by mixing 0.099 g of MABr and 0.294 g of PbBr2 in 0.5 mL of DMSO.

[0124] Example 3

[0125] This example is basically the same as Example 1, except that in this example, the perovskite precursor solution is formed by mixing 0.137 g of FABr and 0.367 g of PbBr2 in 0.5 mL of DMSO.

[0126] Example 4

[0127] This example is basically the same as Example 1, except that in this example, the thickness of the first sub-layer is 80 nm.

[0128] Example 5

[0129] This example is basically the same as Example 1, except that in this example, the thickness of the first sub-layer is 100 nm.

[0130] Example 6

[0131] This example is basically the same as Example 1, except that in this example, the zirconium phosphate hydrate is Zr(PO4)(H2PO4)·2H2O.

[0132] Example 7

[0133] This example is basically the same as Example 1, except that in this example, the zirconium phosphate hydrate is θ-Zr(HPO4)2·6H2O.

[0134] Comparative Example 1

[0135] This example is basically the same as Example 1, except that zirconium phosphate hydrate is not used in this comparative example.

[0136] Example 8

[0137] This example provides an optoelectronic device, and the preparation method is as follows:

[0138] Provide FTO glass, wipe the FTO surface with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, then ultrasonically clean with deionized water, acetone, ethanol, and isopropanol for 15 min, and then dry with nitrogen for later use to obtain an FTO cathode with a thickness of 100 nm;

[0139] Use a pipette to aspirate 40 μL of zinc oxide ethanol solution with a concentration of 25 mg / mL, set it on the cathode, and perform spin coating. The spin coating speed is 3000 rpm and the time is 30 s, and anneal at 130 °C for 10 min to form an electron functional layer with a thickness of 70 nm;

[0140] Mix 0.461 g of PbI2, 0.172 g of formamidinium hydroiodide (FAI), 0.0105 g of methylammonium chloride (MACl), and 0.104 g of CsI in 0.5 mL of DMSO, and stir overnight at 60 °C to obtain a perovskite precursor solution;

[0141] Use a pipette to aspirate the perovskite precursor solution and drop it on the electron functional layer. First, spin coat at 1000 rpm for 12 s, then spin coat at 3000 rpm for 10 s, and after spin coating at 1000 rpm for 2 s, blow out a heat flow of 100 °C with a hot air gun until the perovskite quantum dot film turns completely black. Then anneal on a hot plate at 185 °C for 17 min and then anneal at 130 °C for 10 min to form a perovskite prefabricated layer with a thickness of 160 nm;

[0142] Dissolve α-Zr(HPO4)2·H2O in acetone to obtain a zirconium phosphate hydrate solution with a concentration of 0.55 mg / mL. Drop the zirconium phosphate hydrate solution on the perovskite prefabricated layer, spin coat at 3000 rpm for 30 s, and then anneal at 125 °C for 30 min to form a second sub-layer with a thickness of 160 nm and a first sub-layer with a thickness of 87 nm;

[0143] Coat a layer of carbon black on the zirconium phosphate hydrate layer by doctor blade, and then anneal at 110 °C for 20 min to form a carbon electrode with a thickness of 150 nm;

[0144] Encapsulate to obtain an optoelectronic device.

[0145] Example 9

[0146] This example is basically the same as Example 1, except that in this example, the perovskite precursor solution is formed by mixing 0.099 g of MABr and 0.294 g of PbBr2 in 0.5 mL of DMSO.

[0147] Example 10

[0148] This example is basically the same as Example 1, except that in this example, the perovskite precursor solution is formed by mixing 0.137 g of FABr and 0.367 g of PbBr2 in 0.5 mL of DMSO.

[0149] Example 11

[0150] This example is basically the same as Example 1, except that in this example, the mass concentration of the zirconium phosphate hydrate solution is 0.05 mg / mL.

[0151] Example 12

[0152] This example is basically the same as Example 1, except that in this example, the zirconium phosphate hydrate solution is 1 mg / mL.

[0153] Example 13

[0154] This example is basically the same as Example 1, except that in this example, the thickness of the first sub-layer is 80 nm.

[0155] Example 14

[0156] This example is basically the same as Example 1, except that in this example, the thickness of the first sub-layer is 100 nm.

[0157] Example 15

[0158] This example is basically the same as Example 1, except that in this example, the zirconium phosphate hydrate is Zr(PO4)(H2PO4)·2H2O.

[0159] Example 16

[0160] This example is basically the same as Example 1, except that in this example, the zirconium phosphate hydrate is θ-Zr(HPO4)2·6H2O.

[0161] Example 17

[0162] This example is basically the same as Example 1, except that in this example, the thickness of the carbon electrode is 130 nm.

[0163] Example 18

[0164] This embodiment is basically the same as Embodiment 1, except that the thickness of the carbon electrode in this embodiment is 170 nm.

[0165] Embodiment 19

[0166] This embodiment is basically the same as Embodiment 1, except that the material of the carbon electrode in this embodiment is graphite.

[0167] Embodiment 20

[0168] This embodiment is basically the same as Embodiment 1, except that the material of the carbon electrode in this embodiment is activated carbon.

[0169] Embodiment 21

[0170] This embodiment is basically the same as Embodiment 1, except that the annealing temperature of the first sub-layer in this embodiment is 120 °C.

[0171] Embodiment 22

[0172] This embodiment is basically the same as Embodiment 1, except that the annealing temperature of the first sub-layer in this embodiment is 130 °C.

[0173] Embodiment 23

[0174] This embodiment is basically the same as Embodiment 1, except that the annealing time of the first sub-layer in this embodiment is 20 min.

[0175] Embodiment 24

[0176] This embodiment is basically the same as Embodiment 1, except that the annealing time of the first sub-layer in this embodiment is 40 min.

[0177] Embodiment 25

[0178] This embodiment is basically the same as Embodiment 1, except that the annealing temperature of the carbon electrode in this embodiment is 100 °C.

[0179] Embodiment 26

[0180] This embodiment is basically the same as Embodiment 1, except that the annealing temperature of the carbon electrode in this embodiment is 120 °C.

[0181] Embodiment 27

[0182] This embodiment is basically the same as Embodiment 1, except that the annealing time of the carbon electrode in this embodiment is 10 min.

[0183] Embodiment 28

[0184] This embodiment is basically the same as Embodiment 1, except that the annealing time of the carbon electrode in this embodiment is 30 min.

[0185] Comparative Example 2

[0186] This comparative example is basically the same as Example 1, except that in this comparative example, the carbon electrode is replaced with a 2,2",7,7"-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD) hole functional layer and an Ag electrode, and the first sublayer is not provided.

[0187] Comparative Example 3

[0188] This comparative example is basically the same as Comparative Example 1, except that in this comparative example, the light-emitting device is prepared in the order of Ag electrode, hole functional layer, perovskite prefabricated layer, electron functional layer, and cathode.

[0189] Comparative Example 4

[0190] This comparative example is basically the same as Example 1, except that in this comparative example, the first sublayer is not provided.

[0191] The films of Examples 1 to 7 and Comparative Example 1 were tested to obtain the roughness (Ra) of the films, and the test results are shown in Table 1.

[0192] Among them, the test method for the roughness (Ra) is as follows:

[0193] 1. Sample preparation: First, fix the film sample to be measured on a suitable sample stage. Ensure that the sample surface is clean, free of dust and stains. Note that the sample should be as flat as possible to avoid large height differences during measurement.

[0194] 2. Select a suitable probe: Select a suitable AFM probe according to the film material to be measured and the desired resolution.

[0195] 3. Set measurement parameters: In the AFM control software, set appropriate measurement parameters, including scanning speed, scanning area size, scanning mode, etc.

[0196] 4. Conduct measurement: Start the AFM and conduct the measurement. During the measurement, the probe of the AFM will scan the sample surface, and by measuring the interaction force between the probe and the sample surface, the height information of the sample surface is obtained.

[0197] 5. Data processing: The obtained AFM image is further processed through corresponding software, including baseline correction, noise removal, and finally the roughness value of the sample is obtained.

[0198] The test results are shown in Table 1.

[0199] Table 1

[0200]

[0201] As can be seen from Table 1, compared with Comparative Example 1, the roughness (Ra) of the thin films in Examples 1-7 is relatively smaller. This is due to the fact that zirconium phosphate hydrate induces secondary crystallization of the perovskite light-emitting layer. After the secondary growth of the grains, the defects are significantly reduced, and the thin film becomes more uniform and dense.

[0202] The optoelectronic devices of Examples 8-29 and Comparative Examples 2-4 were tested to obtain the external quantum efficiency EQE and the lifetime T95@1000nit of the optoelectronic devices.

[0203] Among them, the test method for the external quantum efficiency EQE is as follows: Using a FushiDA FPD optical property measurement device, an efficiency test system built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 through LabView, parameters such as voltage, current, brightness, and emission spectrum are measured, and the external quantum efficiency EQE of the device is obtained through calculation. The specific calculation formula is as follows:

[0204]

[0205] In the formula, ηe is the optical output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, K R is the radiation process rate, and K NR is the non-radiation process rate.

[0206] The test method for the lifetime T95@1000nit is as follows: In CDA gas, under a constant current drive, the time taken for the brightness of the device to decay to a certain proportion of the maximum brightness is measured. The time when the brightness decays to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime test cycle, the device lifetime test is usually carried out by accelerating the device aging at a high brightness, and the lifetime at a low brightness is obtained by fitting through an attenuation fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is:

[0207]

[0208] Among them, T95 L is the lifetime at a low brightness, generally taking the lifetime at 1000 nits, and T95 H is the lifetime at a high brightness, that is, the measured lifetime, L H is the maximum brightness to which the device is accelerated, and L L is generally 1000 nits, and A is the acceleration factor, taking 1.7. Among them, the constant current is 2 mA.

[0209] The maximum external quantum efficiency (EQE) and lifetime (T95@1000 nit) are both measured at room temperature with an air humidity of 30 - 60%.

[0210] The test results are shown in Table 2.

[0211] Table 2

[0212]

[0213] As can be seen from Table 2, the PeLEDs devices with carbon electrodes and the first sub-layer in Examples 1 - 21 show far better performance than the conventional front / backward PeLEDs devices with hole transport layers and metal electrode layers in Examples 22, Comparative Examples 1 - 2. This is because the zirconium phosphate hydrate induces secondary crystallization of the perovskite light-emitting layer. After the secondary growth of the grains, the defects are significantly reduced, the film becomes more uniform and dense, enhancing the interfacial contact and energy level alignment between the perovskite layer and the electrode. Moreover, during long-term operation, due to the chemical inertness of the C electrode, a small amount of diffused halogen does not significantly affect the device performance. Therefore, the device efficiency and lifetime are greatly improved. It can be seen that in all of Examples 1 - 22 with an interfacial layer containing zirconium phosphate hydrate, the efficiency and lifetime are significantly improved due to the secondary growth of the intermediate phase induced by the crystal water. No obvious improvement is seen in Comparative Example 3 without an interfacial layer including zirconium phosphate hydrate, indicating that the interfacial layer containing zirconium phosphate hydrate is essential.

[0214] The optoelectronic devices provided in the embodiments of the present application have been introduced in detail above. Specific examples are used herein to illustrate the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A film, characterized in that: It includes zirconium phosphate and first perovskite quantum dots.

2. The film according to claim 1, characterized in that: It includes a first sub-layer and a second sub-layer. The material of the first sub-layer includes the first perovskite quantum dots and the zirconium phosphate, and the material of the second sub-layer includes second perovskite quantum dots.

3. The film according to claim 2, characterized in that: The zirconium phosphate includes one or more of α-Zr(HPO4)2, Zr(PO4)(H2PO4), θ-Zr(HPO4)2; and / or The thickness of the first sub-layer is 80 - 100 nm; and / or The refractive index of the first sub-layer is 1.8 - 2.2; and / or The light transmittance of the first sub-layer is above 88%; and / or The average particle size of the second perovskite quantum dots is 9 - 13 nm; and / or The average particle size of the first perovskite quantum dots is 15 - 20 nm.

4. An optoelectronic device, characterized in that: It includes an anodic electrode, an active layer, and a cathodic electrode which are stacked. The active layer includes zirconium phosphate and first perovskite quantum dots.

5. The optoelectronic device according to claim 4, characterized in that: The active layer includes a first sub-layer and a second sub-layer. The first sub-layer is disposed between the anodic electrode and the second sub-layer; the second sub-layer includes second perovskite quantum dots, and the first sub-layer includes the zirconium phosphate and the first perovskite quantum dots; and / or The anodic electrode is a carbon electrode. Among them, the material of the carbon electrode includes one or more of carbon black, graphite, activated carbon, carbon nanotubes, graphene, and carbon fiber; and / or The thickness of the carbon electrode is 130 - 170 nm; and / or The material of the cathodic electrode includes one or more of metals, carbon materials, and metal oxides. Among them, the metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxides include a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, and the composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

6. The optoelectronic device according to claim 5, characterized in that: The zirconium phosphate includes one or more of α-Zr(HPO4)2, Zr(PO4)(H2PO4), θ-Zr(HPO4)2; and / or The thickness of the first sub-layer is 80 - 100 nm; and / or The refractive index of the first sub-layer is 1.8 - 2.2; and / or The light transmittance of the first sub-layer is above 88%; and / or The average particle size of the second perovskite quantum dots is 9 - 13 nm; and / or The average particle size of the first perovskite quantum dots is 15 - 20 nm.

7. The optoelectronic device according to any one of claim 6, characterized in that: The optoelectronic device further includes an electron functional layer which is disposed between the cathodic electrode and the second sub-layer.

8. The optoelectronic device according to claim 7, characterized in that: The second perovskite quantum dot and the first perovskite quantum dot are each independently selected from one or more of AMX3 and BMX3, where A is Cs + ions, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or one or more of them, X is a halogen anion selected from Cl - , Br - , I - or one or more of them, B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2; and / or The material of the electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include one or more of metal oxides, doped metal oxides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The dopants in the doped metal oxides include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS. The organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds.

9. A method for preparing an optoelectronic device, characterized in that, It includes the following steps: Provide a light-emitting device preform, and the light-emitting device preform includes a cathode; Provide a perovskite quantum dot solution, the perovskite quantum dot solution includes second perovskite quantum dots, and set the perovskite quantum dot solution on the light-emitting device preform to form a perovskite pre-layer; Set zirconium phosphate hydrate on the perovskite pre-layer and react to obtain a second sub-layer and a first sub-layer. Among them, the second sub-layer includes second perovskite quantum dots, the first sub-layer includes zirconium phosphate and first perovskite quantum dots, and the first sub-layer is located on the side of the second sub-layer away from the light-emitting device preform; Form an anode on the first sub-layer.

10. The preparation method according to claim 9, characterized in that: The step of setting zirconium phosphate hydrate on the perovskite pre-layer and reacting to obtain a second sub-layer and a first sub-layer specifically includes: Provide zirconium phosphate hydrate and a first solvent, mix them to obtain a zirconium phosphate hydrate solution; Set the zirconium phosphate hydrate solution on the perovskite layer pre-layer and perform a first heat treatment to obtain a second sub-layer and a first sub-layer.

11. The preparation method according to claim 10, characterized in that: The zirconium phosphate hydrate includes one or several of α-Zr(HPO4)2·H2O, Zr(PO4)(H2PO4)·2H2O, θ-Zr(HPO4)2·6H2O; and / or The thickness of the first sub-layer is 80-100 nm; and / or The first solvent includes one or several of acetone, N,N-dimethylformamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone, pyridine, tetrahydrofuran, toluene, ethylene glycol, methanol, ethanol, 1-propanol, dichloromethane, o-xylene; and / or The mass concentration of the zirconium phosphate hydrate solution is 0.05-1 mg / mL; and / or The temperature of the first heat treatment is 120 to 130 °C, and the time of the first heat treatment is 20 to 40 min.

12. The preparation method according to claim 9, characterized in that: The anode is a carbon electrode, and forming the anode on the first sub-layer includes: providing a carbon material and a second solvent, mixing them to obtain a carbon material solution; disposing the carbon material solution on the first sub-layer and performing a second heat treatment to obtain a carbon electrode.

13. The preparation method according to claim 12, characterized in that: The material of the carbon electrode includes one or more of carbon black, graphite, activated carbon, carbon nanotubes, graphene, and carbon fiber; and / or the thickness of the carbon electrode is 130 to 170 nm; and / or the second solvent includes one or more of acetone, N,N-dimethylformamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone, pyridine, tetrahydrofuran, toluene, ethylene glycol, methanol, ethanol, 1-propanol, dichloromethane, and o-xylene; and / or the temperature of the second heat treatment is 100 to 120 °C, and the time of the second heat treatment is 10 to 30 min.

14. The preparation method according to claim 9, characterized in that: The light-emitting device preform includes a stacked cathode and an electron functional layer, and disposing the perovskite quantum dot solution on the light-emitting device preform includes disposing the perovskite quantum dot solution on the electron functional layer.

15. A display device, characterized in that: The display device includes the optoelectronic device according to any one of claims 4 to 8, or the optoelectronic device prepared by the preparation method according to any one of claims 9 to 14.

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