A femtosecond laser for implant processing and its control method

Abstract

The present invention relates to the field of implant processing technology, and in particular to a femtosecond laser for implant processing and a control method thereof, comprising: obtaining the bone density of the alveolar bone to determine the processing mode of the femtosecond laser; determining whether the processing process of a single stage is qualified based on the distribution density of micropores on the implant surface under the corresponding processing mode; determining the vibration frequency of the implant's rotation process based on the judgment result that the processing process of a single stage is unqualified to adjust the weight of the counterweight block; obtaining the edge smoothness of the micropores based on the adjusted implant to determine whether the dispersion compensation of the femtosecond laser is qualified, and adjusting the spacing of the diffraction grating pair based on the judgment result that the dispersion compensation is unqualified; determining the standard deviation of the thread pitch to determine the qualification of the femtosecond laser's running trajectory, and optimizing the preset frequency or optimizing the spacing adjustment method for unqualified running trajectories. Embodiments of the present invention improve the bone integration rate of the implant.

Description

Technical Field

[0001] The present invention relates to the technical field of implant processing, and in particular to a femtosecond laser for implant processing and a control method thereof. Background Art

[0002] In the field of oral implant manufacturing, femtosecond lasers have become a core technology for high-precision microstructure processing due to their ultrashort pulse characteristics and low thermal damage. However, implant processing faces multiple challenges: differences in bone density directly affect the efficiency of laser energy absorption, requiring dynamic adjustment of the processing mode; the accuracy of thread pitch and micropore distribution directly affects the stability of bone integration, but traditional single-parameter control is difficult to cope with the cumulative errors in multi-stage processing; and finally, pulse broadening caused by group delay dispersion and third-order dispersion during femtosecond laser pulse transmission can cause burrs on the micropore edges and an expansion of the heat-affected zone, seriously degrading surface quality.

[0003] Existing implant processing technologies often rely on fixed parameter models and lack adaptability to dynamic feedback from bone density. For example, high bone density (D2 and above) requires high-energy-density processing to form self-tapping threads, while low bone density (D3 / D4) requires reduced power to avoid bone fractures. However, traditional systems are unable to match bone density with dispersion compensation parameters in real time. Furthermore, vibration during processing can cause thread pitch deviation, while existing counterweight adjustment mechanisms rely solely on static balance and fail to incorporate dynamic optimization based on vibration spectrum characteristics. Furthermore, the spacing adjustment of dispersion compensation devices relies on experience and cannot be corrected in real time, resulting in delayed or overcompensated dispersion compensation, further exacerbating pulse distortion.

[0004] Chinese patent application publication number: CN117353143A discloses a femtosecond laser and a method for mode locking a femtosecond laser. The femtosecond laser includes a gain crystal, a pump source, and a resonant cavity. The femtosecond laser also includes: at least one optically controlled switch disposed in the optical path of the femtosecond laser; and a driver that applies a preset drive signal to the optically controlled switch to enable the femtosecond laser to initiate and maintain femtosecond pulse operation mode. This application applies a drive signal of a specific frequency to the optically controlled switch by the driver, which can stimulate the femtosecond laser to switch from a DC operation mode to a femtosecond pulse operation mode, thereby achieving the initiation of the femtosecond pulse operation mode without mechanical movement, avoiding the problems of resonator detuning and inconsistent initial states that occur when initiating the femtosecond pulse operation mode through mechanical movement. Furthermore, by continuously applying a drive signal to the optically controlled switch, the femtosecond laser can maintain the femtosecond pulse operation mode without interference from other factors.

[0005] The following problems also exist in the existing technology: the processing of implants in the existing technology mostly relies on fixed parameter modes, and lacks real-time monitoring and adjustment of the processing process, which leads to a lack of uniformity and regularity in the surface morphology of the implants, resulting in low processing accuracy of the implants and low bone integration rate. Summary of the Invention

[0006] To this end, the present invention provides a femtosecond laser for implant processing and a control method thereof, so as to overcome the problem in the prior art of lack of real-time monitoring and adjustment of the processing process, which leads to lack of uniformity and regularity in the surface morphology of the implant, resulting in low processing accuracy of the implant and low bone integration rate.

[0007] To achieve the above objectives, the present invention provides, on the one hand, a femtosecond laser for implant processing and a control method thereof, comprising:

[0008] Acquiring the bone density of the alveolar bone to determine the parameter configuration of the femtosecond laser for implant processing based on the bone density;

[0009] In the corresponding processing mode, the processing process is divided into several stages according to the implant diameter, and the qualification of the processing process of each stage is determined based on the micropore distribution density on the implant surface;

[0010] Determining a vibration frequency of the implant during rotation based on a determination result of unqualified processing in a single stage, and changing the weight of a traction weight of the implant according to a comparison result between the vibration frequency and a preset frequency;

[0011] Obtaining the edge smoothness of the implant micropore after the weight of the counterweight is adjusted to determine whether the dispersion compensation of the femtosecond laser is qualified, and adjusting the spacing of the diffraction grating pair with a corresponding spacing adjustment coefficient based on the determination result that the dispersion compensation is unqualified;

[0012] The surface image of the implant is acquired to determine the standard deviation of the thread pitch to determine the eligibility of the running trajectory of the femtosecond laser, and the preset frequency or the pitch adjustment coefficient is optimized for the unqualified running trajectory.

[0013] Furthermore, the process of determining the configuration parameters of the femtosecond laser based on the bone density includes:

[0014] comparing the bone density with a preset bone density;

[0015] Determining that the femtosecond laser processes the implant with the first configuration parameters based on the comparison result that the bone density is greater than the preset bone density;

[0016] Based on the comparison result that the bone density is less than or equal to the preset bone density, it is determined that the femtosecond laser processes the implant with second configuration parameters.

[0017] Furthermore, the process of determining whether the processing of a single stage is qualified based on the micropore distribution density on the implant surface includes:

[0018] Comparing the micropore distribution density with the preset distribution density respectively;

[0019] The processing of a single stage is determined to be unqualified based on the comparison result that the micropore distribution density is less than the first preset density or greater than the second preset density.

[0020] Furthermore, the process of determining and adjusting the counterweight according to the vibration frequency of the implant during rotation includes:

[0021] The vibration amplitude of the implant during rotation is collected in real time and compared with the preset amplitude;

[0022] Determining to adjust the weight of the counterweight based on a comparison result that the vibration amplitude is greater than or equal to a first preset amplitude;

[0023] Based on the comparison result that the vibration amplitude is less than the first preset amplitude and greater than the second preset amplitude, recording one vibration corresponding to the vibration amplitude as a single vibration, and comparing the number of the single vibration with a preset number;

[0024] The weight of the counterweight is adjusted based on a comparison result that the number of the single vibrations is greater than the preset number.

[0025] Furthermore, the process of adjusting the weight of the counterweight includes:

[0026] Determining an eccentricity during the implant processing, and comparing the eccentricity with a preset eccentricity;

[0027] subtracting the eccentricity from the preset eccentricity to obtain an eccentricity difference based on a comparison result that the eccentricity is greater than the preset eccentricity;

[0028] Several weight adjustment methods corresponding to the eccentricity difference are set to adjust the weight of the counterweight block.

[0029] Furthermore, the process of determining the edge smoothness of the micropores includes:

[0030] Comparing the micropore with a standard micropore, and aligning the micropore with the center of the standard micropore as a reference point;

[0031] The ratio of the sum of the lengths of the standard microholes at all non-overlapping positions of the microhole and the standard microhole to the perimeter of the standard microhole is determined as the edge smoothness.

[0032] Furthermore, the process of determining whether the dispersion compensation of the femtosecond laser is qualified according to the edge smoothness includes:

[0033] comparing the edge smoothness with a preset smoothness;

[0034] Based on the comparison result that the edge smoothness is less than the preset smoothness, it is determined that the dispersion compensation of the femtosecond laser is unqualified and the spacing of the diffraction grating pair is adjusted;

[0035] Among them, a number of spacing adjustment coefficients corresponding to the smoothness difference are set to increase the spacing based on the spacing adjustment coefficients, and the smoothness difference is the difference between the preset smoothness and the edge smoothness.

[0036] Furthermore, after the implant is processed, the standard deviation of the thread pitch of the implant is obtained, and the process of determining the adjustment parameter according to the standard deviation includes:

[0037] comparing the standard deviations with preset standard deviations respectively;

[0038] determining to adjust the preset frequency based on a comparison result that the standard deviation is greater than a first preset standard deviation;

[0039] Therein, a plurality of frequency optimization coefficients corresponding to a first standard deviation are provided to reduce the preset frequency based on the frequency optimization coefficients, and the first standard deviation is a difference between the standard deviation and the first preset standard deviation.

[0040] Furthermore, after the implant is processed, the standard deviation of the thread pitch of the implant is obtained, and the process of determining the adjustment parameter according to the standard deviation includes:

[0041] comparing the standard deviations with preset standard deviations respectively;

[0042] Determining to adjust the spacing adjustment coefficient based on a comparison result that the standard deviation is less than or equal to a first preset standard deviation and greater than a second preset standard deviation;

[0043] Among them, a plurality of spacing correction coefficients corresponding to a second standard deviation are provided to increase the spacing adjustment coefficient based on the spacing correction coefficient, and the second standard deviation is the difference between the standard deviation and the second preset standard deviation.

[0044] On the other hand, the present invention also provides a femtosecond laser for implant processing, comprising:

[0045] A core laser generation module, which includes an oscillator for generating initial femtosecond laser pulses and a pump source for providing energy excitation to the gain medium;

[0046] a pulse processing module connected to the core laser generating module, comprising a diffraction grating pair for broadening the pulse of the initial femtosecond laser and compensating for dispersion;

[0047] A control mechanism is connected to the pulse processing module and is used to adjust the spacing of the diffraction grating pair according to a corresponding adjustment parameter based on a determination result of adjusting the spacing of the diffraction grating pair.

[0048] Compared with the prior art, the beneficial effect of the present invention is that the present invention determines the processing mode of the femtosecond laser in a targeted manner according to the bone density of the implanted person. Different bone densities have different corresponding implant requirements. Targeted processing is beneficial to improving bone bonding. Under the determined processing mode, the processing process is divided into several stages according to the implant diameter, and any processing stage is monitored in real time to determine the micropore distribution density. A short micropore distribution density indicates that the micropore distribution is dense, which can increase the adhesion sites of bone cells, promote osteoblast differentiation, and enhance chemical bonding. Excessively dense micropores will hinder the diffusion of nutrients, leading to hypoxic necrosis of bone cells. Sparse micropores lead to insufficient mechanical interlocking, bone stress concentration, and difficulty for bone tissue to grow into the micropores. The processing process of a single processing stage is accurately determined according to the micropore distribution density, so when it is determined that a single processing stage is unqualified, the vibration frequency of the implant's rotation process is determined. The bone bonding speed of the implant is correlated with the specific form of the processing technology. Compared with laser scanning microgrooves and implants, The form of implant rotation thread processing and the processing form of combining laser scanning with implant rotation will have a faster bone integration speed. However, during the rotation of the implant, centrifugal force, mechanical vibration and even airflow will affect the rotational stability of the implant. Insufficient stability will lead to implant eccentricity. The weight of the counterweight block is adjusted according to the eccentricity of the implant to offset the vibration frequency caused by objective reasons, thereby improving the stability of the implant during rotation; based on the edge smoothness of the micropore in the adjusted processing stage, it is determined whether the dispersion compensation is qualified. The initial laser generated by the femtosecond laser will be dispersed. The width of the pulsed laser is restored from the picosecond level to the femtosecond level through dispersion compensation. Insufficient chromatic aberration compensation will lead to insufficient pulse energy density of the femtosecond laser, thereby extending the action time of the laser and the material. Melting, burrs and other features appear on the edge of the micropore, resulting in insufficient edge smoothness of the micropore. Therefore, the dispersion compensation amount is adjusted according to the edge smoothness of the micropore, thereby improving the processing accuracy of the implant and increasing the bone integration rate.

[0049] Furthermore, after all processing stages are completed, the thread pitch of the entire implant is determined to determine whether the overall operating trajectory of the femtosecond laser is qualified, and for unqualified operating trajectories, the preset frequency value is reduced or the spacing adjustment coefficient value is increased to improve the judgment benchmark and chromatic aberration compensation amount, thereby further improving the processing accuracy of the implant and increasing the bone integration rate.

[0050] Furthermore, the present invention determines the eligibility of the femtosecond laser's running trajectory by determining the overall thread pitch. Insufficient dispersion compensation will lead to phase distortion of the pulse and focus position offset. The qualification of the femtosecond laser's running trajectory can be determined by changing the thread pitch. At the same time, insufficient rotational stability of the implant will also cause the femtosecond laser's running trajectory to be unqualified. The two methods result in different degrees of trajectory offset. The adjustment parameters can be determined based on the degree of offset between the thread pitch and the preset pitch, thereby further improving the processing accuracy of the implant and increasing the bone integration rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 This is a flow chart of a method for controlling a femtosecond laser for implant processing according to an embodiment of the present invention;

[0052] Figure 2 A flow chart for determining configuration parameters of a femtosecond laser according to an embodiment of the present invention;

[0053] Figure 3 A flowchart for determining whether a single stage of a processing process is qualified according to an embodiment of the present invention;

[0054] Figure 4 Schematic diagram of the structure of a femtosecond laser for implant processing according to an embodiment of the present invention;

[0055] In the figure: 1. Core laser generation module, 2. Diffraction grating pair, 3. Reflection mirror, 4. First linear track, 5. First motor, 6. Second linear track, 7. Second motor, 8. Output mirror, 9. Initial femtosecond laser pulse, 10. Refracted pulse laser, 11. Femtosecond pulse laser. DETAILED DESCRIPTION

[0056] In order to make the objects and advantages of the present invention more clearly understood, the present invention is further described below with reference to embodiments. It should be understood that the specific embodiments described herein are merely used to explain the present invention and are not intended to limit the present invention.

[0057] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0058] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside", and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. This is only for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0059] Furthermore, it should be noted that, in the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0060] See also Figure 1 As shown, Figure 1 This is a flow chart of a method for controlling a femtosecond laser for implant processing according to an embodiment of the present invention; Figure 2 A flow chart for determining configuration parameters of a femtosecond laser according to an embodiment of the present invention; Figure 3 The flowchart of determining whether a single-stage processing process is qualified is shown in an embodiment of the present invention.

[0061] An embodiment of the present invention provides a control method for a femtosecond laser for implant processing, comprising:

[0062] Step S1, obtaining the bone density of the alveolar bone to determine the parameter configuration of the femtosecond laser for implant processing based on the bone density;

[0063] Step S2: dividing the machining process into several stages according to the implant diameter in the corresponding machining mode, and determining whether the machining process of each stage is qualified based on the micropore distribution density on the implant surface;

[0064] Step S3, determining the vibration frequency of the implant during rotation based on the determination result of the unqualified processing in a single stage, and changing the weight of the traction counterweight of the implant according to the comparison result between the vibration frequency and a preset frequency;

[0065] Step S4, obtaining the edge smoothness of the implant micropore after the weight of the counterweight is adjusted to determine whether the dispersion compensation of the femtosecond laser is qualified, and adjusting the spacing of the diffraction grating pair with the corresponding spacing adjustment coefficient based on the determination result that the dispersion compensation is unqualified;

[0066] Step S5, obtaining a surface image of the implant to determine the standard deviation of the thread pitch to determine the eligibility of the running trajectory of the femtosecond laser, and optimizing the preset frequency or optimizing the pitch adjustment coefficient for unqualified running trajectories.

[0067] Specifically, bone density is determined using cone-beam CT (CBCT). This involves scanning the oral area with a cone-shaped X-ray beam, capturing three-dimensional data using a flat-panel detector, and reconstructing high-resolution cross-sectional images. In CBCT images, bone density is positively correlated with grayscale values. For example, the grayscale value of cortical bone is approximately 800-1500, and that of cancellous bone is approximately 200-800. Software such as Mimics or OsiriX can be used to extract the average grayscale value of the trabecular bone region as a bone density indicator. This software then segments the alveolar bone region and calculates topological parameters such as bone volume fraction (BV / TV) and trabecular thickness (Tb.Th) to quantitatively assess bone density distribution.

[0068] Specifically, a personalized implant guide is generated based on the detection results of oral scans and CBCT, and the thread angle is planned. Then, based on the planning results, an adaptive layering algorithm is used to dynamically adjust the scanning density according to the curvature change to plan the processing path of the femtosecond laser.

[0069] It is understood that the diameter of the implant is usually tapered from the abutment to the bottom, as shown in the following:

[0070] 1. Abutment segment: The largest diameter, usually 3.5mm-5.0mm, to provide sufficient mechanical support area to adapt to the occlusal load of the crown or bridge.

[0071] 2. Body transition section: When extending from the base to the bottom, the diameter gradually decreases, with a gradient of about 0.1mm-0.3mm, forming a taper, for example 2°-6°, to facilitate implantation into the bone and enhance initial stability.

[0072] 3. Bottom segment: The diameter is the smallest, usually 2.0mm-3.5mm, which reduces the risk of cortical bone penetration and increases the bone bonding area through threaded or self-tapping structures.

[0073] In this embodiment, the processing process is divided into an abutment section, a body transition section, and a bottom end section according to the diameter of the implant.

[0074] Specifically, the process of determining the parameter configuration of the femtosecond laser based on the bone density includes:

[0075] comparing the bone density with a preset bone density;

[0076] Determining that the femtosecond laser processes the implant with the first configuration parameters based on the comparison result that the bone density is greater than the preset bone density;

[0077] Based on the comparison result that the bone density is less than or equal to the preset bone density, it is determined that the femtosecond laser processes the implant with second configuration parameters.

[0078] Specifically, the preset bone density value range is set to [1100, 1300], and 1200 is preferably selected in the embodiment of the present invention.

[0079] Specifically, the goal of implant processing using the first configuration parameters is to form a 30°-40° acute angle at the root of the thread, enhance self-tapping properties, and reduce bone compression. The specific processing parameters are:

[0080] Pulse energy: 50μJ-100μJ;

[0081] Repetition frequency: 100kHz-200kHz;

[0082] Scanning speed: 1000mm / s-2000mm / s;

[0083] Focus position: -50μm.

[0084] The goal of implant processing using the second configuration parameters is to form a microporous structure with a diameter of 200-400 μm. The specific processing parameters are:

[0085] Pulse energy: 10μJ-30μJ;

[0086] Repetition frequency: 50kHz-100kHz;

[0087] Scanning speed: 500mm / s-1000mm / s;

[0088] Focus position: +100 μm.

[0089] It is understandable that when the implant is processed with the above configuration parameters, the specific pulse energy, repetition frequency and scanning speed are different for different processing positions. The specific corresponding relationship is the existing technology and will not be repeated here.

[0090] Specifically, the process of determining whether a single stage of processing is qualified based on the micropore distribution density on the implant surface includes:

[0091] Comparing the micropore distribution density with the preset distribution density respectively;

[0092] Determining that the processing of a single stage is unqualified based on a comparison result that the micropore distribution density is less than a first preset density or greater than a second preset density;

[0093] Determining that the processing of a single stage is qualified based on a comparison result that the micropore distribution density is greater than or equal to the first preset density and less than or equal to the second preset density;

[0094] The first preset density is smaller than the second preset density.

[0095] Specifically, the process of determining the micropore distribution density includes:

[0096] Obtain a surface image of the implant, and divide it into several concentric circles with a preset length gradient as the radius, with any micropore as the center;

[0097] The number of micropores within any concentric ring is determined, and the ratio of the number of micropores to the area of the corresponding concentric ring is calculated, and the ratio is determined as the micropore distribution density.

[0098] Specifically, the values of the first preset density and the second preset density are determined according to clinical data. For example, for the base section, the value of the first preset density is , the second preset density is ; For the body transition section, the first preset density is , the second preset density is ; For the bottom segment, the value of the first preset density is , the second preset density is .

[0099] Specifically, when the distribution density of micropores is greater than the second preset density, the micropores are too densely distributed, resulting in restricted migration of bone cells, easily leading to hypoxic necrosis and decreased bone bonding rate; when the distribution density of micropores is less than the first preset density, the micropores are too sparsely distributed, resulting in insufficient mechanical interlocking, making it difficult for bone tissue to grow into the micropores.

[0100] Specifically, the process of determining and adjusting the counterweight according to the vibration frequency of the implant during rotation includes:

[0101] The vibration amplitude of the implant during rotation is collected in real time and compared with the preset amplitude;

[0102] Determining to adjust the weight of the counterweight based on a comparison result that the vibration amplitude is greater than or equal to a first preset amplitude;

[0103] Based on the comparison result that the vibration amplitude is less than the first preset amplitude and greater than the second preset amplitude, recording one vibration corresponding to the vibration amplitude as a single vibration, and comparing the number of the single vibration with a preset number;

[0104] The weight of the counterweight is adjusted based on a comparison result that the number of the single vibrations is greater than the preset number.

[0105] Specifically, the collection of the single vibration takes a single processing stage as a cycle, and the setting of the preset number of times is based on the single processing stage.

[0106] It can be understood that in the process of femtosecond laser processing of implants, the counterweight block refers to a dynamic balancing counterweight block used to balance the rotation system (such as the implant clamping device or the spindle drive system), and its function is to offset the rotational vibration of the implant caused by centrifugal force deviation.

[0107] Specifically, the vibration amplitude during the rotation of the implant can be measured directly by converting mechanical vibration into an electrical signal through the piezoelectric effect using a piezoelectric acceleration sensor, and calculating the vibration velocity or displacement amplitude by integration. This is existing technology and will not be elaborated on. The specific method of measuring the vibration amplitude is not limited, and it is sufficient to meet the measurement requirements.

[0108] Specifically, the value range of the first preset amplitude is set to [45μm, 55μm], and the embodiment of the present invention is preferably 50μm; the value range of the second preset amplitude is set to [25μm, 35μm], and the embodiment of the present invention is preferably 30μm; the value range of the preset number of times is set to [3 times, 5 times], and the embodiment of the present invention is preferably 4 times.

[0109] It can be understood that the values of the preset amplitude and the preset number of times in the embodiment of the present invention are determined based on clinical trial data. When the vibration is greater than the first preset amplitude, high-frequency vibration will be generated, and visible vibration marks will appear on the surface of the implant. When the vibration is less than or equal to the first preset amplitude and greater than the second preset vibration amplitude, there will be a risk of microcracks.

[0110] Specifically, the process of adjusting the weight of the counterweight includes:

[0111] Determining an eccentricity during the implant processing, and comparing the eccentricity with a preset eccentricity;

[0112] subtracting the eccentricity from the preset eccentricity to obtain an eccentricity difference based on a comparison result that the eccentricity is greater than the preset eccentricity;

[0113] Several weight adjustment methods corresponding to the eccentricity difference are set to adjust the weight of the counterweight block.

[0114] Specifically, the value range of the preset eccentricity is set to [12μm, 25μm], and 20μm is preferred in the embodiment of the present invention. The preset eccentricity is determined according to the ISO1940 dynamic balance grade standard to ensure that the machining surface roughness is less than 20μm, avoiding periodic vibration caused by imbalance.

[0115] Specifically, based on the comparison result that the eccentricity difference is greater than or equal to the preset eccentricity difference, it is determined to add a counterweight in the opposite direction of the eccentricity;

[0116] Based on the comparison result that the eccentricity difference is smaller than the preset eccentricity difference, it is determined to reduce the counterweight in the positive direction of eccentricity.

[0117] Specifically, the offset direction of the eccentricity is determined by a laser vibrometer. For example, the offset along the X, Y, or Z axis is determined. Assuming that the measured eccentricity is 30 μm in the positive direction of the X axis, it is necessary to increase the counterweight in the negative direction of the X axis or reduce the counterweight in the positive direction of the X axis.

[0118] Specifically, the preset eccentricity difference has a value range of [5 μm, 10 μm], preferably 8 μm in the embodiment of the present invention, and the magnitude of the weight reduction or increase of the specific counterweight block is equal to the ratio of the eccentricity difference to the system sensitivity coefficient.

[0119] Specifically, the process of determining the edge smoothness of micropores includes:

[0120] Comparing the micropore with a standard micropore, and aligning the micropore with the center of the standard micropore as a reference point;

[0121] The ratio of the sum of the lengths of the standard microholes at all non-overlapping positions of the microhole and the standard microhole to the perimeter of the standard microhole is determined as the edge smoothness.

[0122] Specifically, the standard micropore refers to a micropore whose roughness and edge angle meet the requirements, for example, the roughness Ra≤0.1μm and the edge angle range is: 8°-15° for the standard micropore. It can be understood that the standard micropore is not a single hole. For any micropore on the implant, there is a standard micropore corresponding to it.

[0123] Specifically, the sum of the lengths of the standard microholes refers to the sum of the edge lengths of the standard microholes corresponding to the non-overlapping positions.

[0124] Specifically, the process of determining whether the dispersion compensation of a femtosecond laser is qualified based on edge smoothness includes:

[0125] comparing the edge smoothness with a preset smoothness;

[0126] Determining that the dispersion compensation of the femtosecond laser is qualified based on a comparison result that the edge smoothness is greater than or equal to the preset smoothness;

[0127] Based on the comparison result that the edge smoothness is less than the preset smoothness, it is determined that the dispersion compensation of the femtosecond laser is unqualified and the spacing of the diffraction grating pair is adjusted;

[0128] Among them, a number of spacing adjustment coefficients corresponding to the smoothness difference are set to increase the spacing based on the spacing adjustment coefficients, and the smoothness difference is the difference between the preset smoothness and the edge smoothness.

[0129] Specifically, the preset smoothness value range is set to [0.8, 0.95], and 0.85 is preferred in the embodiment of the present invention.

[0130] Specifically, under the condition that the dispersion compensation is determined to be unqualified, the smoothness difference is compared with a preset smoothness difference;

[0131] Determining, based on a comparison result that the smoothness difference is greater than the preset smoothness difference, to increase the distance by a first distance adjustment coefficient;

[0132] Based on a comparison result that the smoothness difference is less than or equal to the preset smoothness difference, it is determined to increase the distance by a second distance adjustment coefficient.

[0133] Specifically, the value range of the preset smoothness difference is set to [0.05, 0.15], and the embodiment of the present invention preferably is 0.1; the value range of the first spacing adjustment coefficient is set to [1.004, 1.008], and the embodiment of the present invention preferably is 1.005; the value range of the second spacing adjustment coefficient is set to [1.001, 1.003], and the embodiment of the present invention preferably is 1.002.

[0134] Specifically, a larger smoothness difference indicates a greater degree of dispersiveness compensation failure, and the spacing between the diffraction grating pairs needs to be increased to increase the dispersiveness compensation. It can be understood that the degree of dispersiveness compensation is positively correlated with the spacing between the diffraction grating pairs.

[0135] Specifically, after the implant is processed, the standard deviation of the thread pitch of the implant is obtained, and the process of determining the adjustment parameter according to the standard deviation includes:

[0136] comparing the standard deviations with preset standard deviations respectively;

[0137] determining to adjust the preset frequency based on a comparison result that the standard deviation is greater than a first preset standard deviation;

[0138] Therein, a plurality of frequency optimization coefficients corresponding to a first standard deviation are provided to reduce the preset frequency based on the frequency optimization coefficients, and the first standard deviation is a difference between the standard deviation and the first preset standard deviation.

[0139] Specifically, the process of determining the standard deviation includes:

[0140] The distance between the individual threads of the implant is compared with the preset distance;

[0141] Determining that the thread pitch is qualified based on a comparison result that the distance is less than or equal to a first preset distance and greater than or equal to a second preset distance;

[0142] Determining that the thread pitch is unqualified based on a comparison result that the distance is greater than a first preset distance or less than a second preset distance;

[0143] Determining an absolute difference between the distance and the preset distance based on a determination result that the thread pitch is unqualified;

[0144] Calculate the standard deviation of the absolute differences.

[0145] Specifically, the first preset distance and the second preset distance are the maximum and minimum values of the thread pitch allowed according to design requirements. For example, according to the ISO standard requirement that the pitch error is ≤±0.02mm and the pitch requirement is 2mm, then the first preset distance is 2.02mm and the second preset distance is 1.98mm.

[0146] Specifically, the value range of the first preset standard deviation is set to [0.3 mm, 0.5 mm], and 0.3 mm is preferred in the embodiment of the present invention.

[0147] Specifically, comparing the first standard deviation with a preset difference value;

[0148] Determining to reduce the preset frequency by a first frequency optimization coefficient based on a comparison result that the first standard deviation is greater than the preset difference value;

[0149] Based on a comparison result that the first standard deviation is smaller than or equal to the preset difference value, it is determined to reduce the preset frequency by a second frequency optimization coefficient.

[0150] Specifically, the value range of the preset difference is set to [0.02mm, 0.06mm], and the embodiment of the present invention preferably is 0.04mm; the value range of the first frequency optimization coefficient is set to [0.92, 0.95], and the embodiment of the present invention preferably is 0.94; the value range of the second frequency optimization coefficient is set to [0.96, 0.98], and the embodiment of the present invention preferably is 0.97.

[0151] Specifically, after the implant is processed, the standard deviation of the thread pitch of the implant is obtained, and the process of determining the adjustment parameter according to the standard deviation includes:

[0152] comparing the standard deviations with preset standard deviations respectively;

[0153] Determining to adjust the spacing adjustment coefficient based on a comparison result that the standard deviation is less than or equal to a first preset standard deviation and greater than a second preset standard deviation;

[0154] Among them, a plurality of spacing correction coefficients corresponding to a second standard deviation are provided to increase the spacing adjustment coefficient based on the spacing correction coefficient, and the second standard deviation is the difference between the standard deviation and the second preset standard deviation.

[0155] Specifically, the value range of the second preset standard deviation is set to [0.1 mm, 0.29 mm], and 0.15 mm is preferred in the embodiment of the present invention.

[0156] Specifically, comparing the second standard deviation with a preset difference value;

[0157] Determining to reduce the spacing adjustment coefficient by the first spacing correction coefficient based on a comparison result that the second standard deviation is greater than the preset difference;

[0158] Based on the comparison result that the second standard deviation is smaller than or equal to the preset difference value, it is determined to reduce the spacing adjustment coefficient by a second spacing correction coefficient.

[0159] Specifically, the value range of the first spacing correction coefficient is set to [0.955, 0.97], and the preferred embodiment of the present invention is 0.96; the value range of the second spacing correction coefficient is set to [0.971, 0.99], and the preferred embodiment of the present invention is 0.98.

[0160] See also Figure 4 As shown in FIG, it is a schematic structural diagram of a femtosecond laser for implant processing according to an embodiment of the present invention.

[0161] An embodiment of the present invention further provides a femtosecond laser for implant processing, comprising:

[0162] A core laser generation module 1, comprising an oscillator (not shown) for generating an initial femtosecond laser pulse 9 and a pump source (not shown) for providing energy excitation to a gain medium;

[0163] a pulse processing module connected to the core laser generation module, comprising a diffraction grating pair 2 for broadening and compensating for dispersion of the initial femtosecond laser 9 pulse, a reflector 3 for reflecting the pulsed laser, a first motor 5, a second motor 7, a first linear track 4 and a second linear track 6 for moving the diffraction grating pair 2 in a specific direction, and an output mirror 8 for emitting the femtosecond pulsed laser 11;

[0164] A control mechanism (not shown), which is connected to the pulse processing module, includes:

[0165] a parameter determination module, configured to determine the bone density of the alveolar bone, so as to determine a parameter configuration of the femtosecond laser for implant processing based on the bone density;

[0166] A stage division module is used to divide the processing process into several stages according to the diameter of the implant and determine whether the processing process of a single stage is qualified based on the micropore distribution density on the implant surface;

[0167] A stability determination module, configured to adjust parameters according to a comparison result between the vibration frequency of the implant and a preset frequency to change the weight of the traction counterweight of the implant;

[0168] a compensation determination module for determining whether the dispersion compensation of the femtosecond laser is qualified based on the edge smoothness of the implant micropores, and adjusting the spacing of the diffraction grating pair based on the determination result that the dispersion compensation is unqualified;

[0169] The trajectory determination module is used to determine the eligibility of the femtosecond laser's running trajectory according to the standard deviation of the thread pitch of the implant, and optimize the preset frequency or the pitch adjustment coefficient for unqualified running trajectories.

[0170] Specifically, the specific process of generating femtosecond pulse laser by the femtosecond laser includes:

[0171] The initial femtosecond pulse laser 9 generated by the core laser generation module 1 is refracted by the output mirror 8 to become a refracted pulse laser 10 and enters the pulse processing module. After being broadened by the diffraction grating pair 2, it returns through the reflector 3, and then is dispersion compensated by the diffraction grating pair 2 before being output through the output mirror 8 to become a femtosecond pulse laser 11. Example 1:

[0172] The first configuration parameters were used for implant processing, specifically: pulse energy: 70 μJ, repetition frequency: 150 kHz, scanning speed: 1500 mm / s, and focus position: -50 μm.

[0173] The second configuration parameters were used for implant processing, specifically: pulse energy: 20 μJ, repetition frequency: 75 kHz, scanning speed: 750 mm / s, and focus position: +100 μm.

[0174] The bone integration rate of the implant processed by the control method of the femtosecond laser for implant processing according to the embodiment of the present invention is significantly improved in actual application compared with the bone integration rate of the traditional processing method, as shown in the table.

[0175] Table 2 Comparison of the bone binding rate using the method of the present invention and the bone binding rate using the traditional processing method

[0176]

[0177] Data source: Clinical trial of the Affiliated Stomatological Hospital of XX University, sample size n=200, with the sample size of 100 for the first configuration parameter and 100 for the second configuration parameter.

[0178] As can be seen from the table, the bone integration rate and bone integration rate of the implant produced by the method of the embodiment of the present invention are significantly improved compared with the traditional processing method.

[0179] Thus far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after such changes or substitutions will fall within the scope of protection of the present invention.

Claims

1. A control method for a femtosecond laser for implant processing, characterized in that: include: Acquiring the bone density of the alveolar bone to determine the parameter configuration of the femtosecond laser for implant processing based on the bone density; In the corresponding processing mode, the processing process is divided into several stages according to the implant diameter, and the qualification of the processing process of each stage is determined based on the micropore distribution density on the implant surface; Determining a vibration frequency of the implant during rotation based on a determination result of unqualified processing in a single stage, and changing the weight of a traction weight of the implant according to a comparison result between the vibration frequency and a preset frequency; Obtaining the edge smoothness of the implant micropore after the weight of the counterweight is adjusted to determine whether the dispersion compensation of the femtosecond laser is qualified, and adjusting the spacing of the diffraction grating pair with a corresponding spacing adjustment coefficient based on the determination result that the dispersion compensation is unqualified; The surface image of the implant is acquired to determine the standard deviation of the thread pitch to determine the eligibility of the running trajectory of the femtosecond laser, and the preset frequency or the pitch adjustment coefficient is optimized for the unqualified running trajectory.

2. The control method of a femtosecond laser for implant processing according to claim 1, characterized in that: The process of determining the configuration parameters of the femtosecond laser based on the bone density includes: comparing the bone density with a preset bone density; Determining that the femtosecond laser processes the implant with the first configuration parameters based on the comparison result that the bone density is greater than the preset bone density; Based on the comparison result that the bone density is less than or equal to the preset bone density, it is determined that the femtosecond laser processes the implant with second configuration parameters.

3. The control method of a femtosecond laser for implant processing according to claim 2, characterized in that: The process of determining whether the processing of a single stage is acceptable based on the micropore distribution density of the implant surface includes: Comparing the micropore distribution density with the preset distribution density respectively; The processing of a single stage is determined to be unqualified based on the comparison result that the micropore distribution density is less than the first preset density or greater than the second preset density.

4. The control method of a femtosecond laser for implant processing according to claim 3, characterized in that: The process of determining the adjustment of the counterweight according to the vibration frequency of the implant's rotation process includes: The vibration amplitude of the implant during rotation is collected in real time and compared with the preset amplitude; Determining to adjust the weight of the counterweight based on a comparison result that the vibration amplitude is greater than or equal to a first preset amplitude; Based on the comparison result that the vibration amplitude is less than the first preset amplitude and greater than the second preset amplitude, recording one vibration corresponding to the vibration amplitude as a single vibration, and comparing the number of the single vibration with a preset number; The weight of the counterweight is adjusted based on a comparison result that the number of the single vibrations is greater than the preset number.

5. The control method of a femtosecond laser for implant processing according to claim 4, characterized in that: The process of adjusting the weight of the counterweight includes: determining an eccentricity during implant processing and comparing the eccentricity with a preset eccentricity; subtracting the eccentricity from the preset eccentricity to obtain an eccentricity difference based on a comparison result that the eccentricity is greater than the preset eccentricity; Several weight adjustment methods corresponding to the eccentricity difference are set to adjust the weight of the counterweight block.

6. The control method of a femtosecond laser for implant processing according to claim 5, characterized in that: The process of determining the edge smoothness of micropores includes: Comparing the micropore with a standard micropore, and aligning the micropore with the center of the standard micropore as a reference point; The ratio of the sum of the lengths of the standard microholes at all non-overlapping positions of the microhole and the standard microhole to the perimeter of the standard microhole is determined as the edge smoothness.

7. The control method of a femtosecond laser for implant processing according to claim 6, characterized in that: The process of determining whether the dispersion compensation of a femtosecond laser is qualified based on edge smoothness includes: comparing the edge smoothness with a preset smoothness; Based on the comparison result that the edge smoothness is less than the preset smoothness, it is determined that the dispersion compensation of the femtosecond laser is unqualified and the spacing of the diffraction grating pair is adjusted; Among them, a number of spacing adjustment coefficients corresponding to the smoothness difference are set to increase the spacing based on the spacing adjustment coefficients, and the smoothness difference is the difference between the preset smoothness and the edge smoothness.

8. The control method of a femtosecond laser for implant processing according to claim 7, characterized in that: After completing the implant processing, the standard deviation of the implant thread pitch is obtained. The process of determining the adjustment parameters based on the standard deviation includes: comparing the standard deviations with preset standard deviations respectively; determining to adjust the preset frequency based on a comparison result that the standard deviation is greater than a first preset standard deviation; Therein, a plurality of frequency optimization coefficients corresponding to a first standard deviation are provided to reduce the preset frequency based on the frequency optimization coefficients, and the first standard deviation is a difference between the standard deviation and the first preset standard deviation.

9. The control method of a femtosecond laser for implant processing according to claim 7, characterized in that: After completing the implant processing, the standard deviation of the implant thread pitch is obtained. The process of determining the adjustment parameters based on the standard deviation includes: comparing the standard deviations with preset standard deviations respectively; Determining to adjust the spacing adjustment coefficient based on a comparison result that the standard deviation is less than or equal to a first preset standard deviation and greater than a second preset standard deviation; Among them, a plurality of spacing correction coefficients corresponding to a second standard deviation are provided to increase the spacing adjustment coefficient based on the spacing correction coefficient, and the second standard deviation is the difference between the standard deviation and the second preset standard deviation.

10. A femtosecond laser using the control method for a femtosecond laser for implant processing according to any one of claims 1 to 9, characterized in that: include: A core laser generation module, which includes an oscillator for generating initial femtosecond laser pulses and a pump source for providing energy excitation to the gain medium; a pulse processing module connected to the core laser generation module, comprising a diffraction grating pair for broadening the initial femtosecond laser pulse and compensating for dispersion; A control mechanism is connected to the pulse processing module and is used to adjust the spacing of the diffraction grating pair according to a corresponding adjustment parameter based on a determination result of adjusting the spacing of the diffraction grating pair.

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