Heterogeneous integrated two-port interconnection radio frequency failure detection clamp
By designing a radio frequency failure detection fixture for heterogeneous integrated two-port interconnection, combining radio frequency failure detection, current application and voltage detection functions, the problem that traditional RF fixtures cannot simultaneously evaluate RF performance and resistive performance is solved, and more accurate and efficient test results are achieved.
Patent Information
- Application Number
- CN202510386937.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2025-06-20
AI Technical Summary
Traditional RF fixtures cannot evaluate RF performance and resistive performance at the same time, resulting in increased testing costs, extended cycles, and may introduce additional parasitic effects, affecting the accuracy of test results.
A radio frequency failure detection fixture for heterogeneous integrated two-port interconnected two-port interconnection is designed, combining radio frequency failure detection, current application and voltage detection functions. By symmetrically arranged on both sides of the device to be detected, the first and second fixtures are respectively arranged, including a radio frequency material substrate, a radio frequency port based on a coplanar waveguide, a copper via, a power-up port, and a voltage detection port, to achieve simultaneous RF failure detection and resistance performance evaluation.
This fixture can effectively overcome the limitations of traditional RF fixtures, realize simultaneous RF failure detection and resistance performance evaluation, improve the accuracy and efficiency of testing, and reduce the cost and cycle of testing.
Smart Images
Figure CN120177837A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of radio frequency and microwave measurement, and more particularly to a radio frequency failure detection fixture for heterogeneous integrated two-port interconnection. Background Art
[0002] In traditional advanced packaging, the reliability failure of the interconnection structure is usually evaluated by applying a direct current and detecting whether the resistance exceeds a preset threshold. However, with the continuous increase in the frequency of radio frequency microsystems, the traditional resistance detection method can no longer accurately reflect the failure characteristics of the heterogeneous integrated interconnection structure. Especially during high-frequency signal transmission, this method cannot effectively capture the performance degradation of the device in the radio frequency environment. Therefore, in order to more accurately evaluate the radio frequency failure of the device, it is necessary to combine the resistance characteristics of the heterogeneous integrated interconnection structure with the degradation of its radio frequency performance (such as changes in S-parameters - reflection coefficient and transmission coefficient), which has become a more effective and accurate failure detection method. This method can comprehensively reflect the electrical performance changes of the device under high-frequency operating conditions.
[0003] Traditional radio frequency fixtures are mainly used for the transmission of radio frequency signals. However, when performing failure analysis on heterogeneous integrated interconnection structures, in addition to paying attention to the degradation of radio frequency performance, it is also necessary to evaluate its resistance performance. Since traditional radio frequency fixtures cannot simultaneously complete the resistance performance test, it is often necessary to replace the fixture to conduct the resistance test, which not only increases the test cost and prolongs the cycle, but also may introduce additional parasitic effects, affecting the accuracy of the test results.
[0004] Therefore, how to provide a radio frequency failure detection fixture that can simultaneously perform radio frequency failure detection and resistance performance evaluation is an urgent problem to be solved by those skilled in the art. Summary of the Invention
[0005] In view of this, the present invention provides a radio frequency failure detection fixture for heterogeneous integrated two-port interconnection, which combines radio frequency failure detection with current application and voltage detection functions, and can effectively overcome the limitation that traditional radio frequency fixtures cannot simultaneously evaluate radio frequency performance and resistance performance.
[0006] To achieve the above object, the present invention adopts the following technical solutions:
[0007] On the one hand, the present invention provides a radio frequency failure detection fixture for heterogeneous integrated two-port interconnection. The radio frequency failure detection fixture includes a first fixture and a second fixture symmetrically arranged on both sides of the device to be detected. The first fixture and the second fixture respectively include: a radio frequency material substrate, a radio frequency port based on a coplanar waveguide, a copper through-hole, a power supply port, and a voltage detection port;
[0008] The radio frequency port based on the coplanar waveguide is disposed on the radio frequency material substrate, and a power supply port and a voltage detection port are respectively led out through the copper through holes.
[0009] Preferably, the radio frequency port includes a signal terminal and a ground terminal. The signal terminal transmits the radio frequency signal from an external device to the radio frequency material substrate, and the ground terminal provides a stable reference potential for the radio frequency signal.
[0010] Preferably, the radio frequency port includes two ground terminals, which are located on both sides of the signal terminal.
[0011] Preferably, the first fixture and the second fixture each include three copper through holes. Two of the copper through holes respectively lead out the signal terminals of the first fixture and the second fixture below the radio frequency material substrate and connect them to the power supply port and the voltage detection port; the other two copper through holes respectively lead out the two ground terminals of the first fixture and the second fixture below the radio frequency material substrate and connect them to the ground. Description of the Drawings
[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.
[0013] Figure 1 A radio frequency failure detection fixture for heterogeneous integration two-port interconnection provided by the present invention.
[0014] Figure 2 A partial enlarged view of the first fixture provided by the present invention.
[0015] Figure 3 A structural diagram of "fixture - coplanar waveguide 1(L) - fixture" provided by the present invention.
[0016] Figure 4 A structural diagram of "fixture - coplanar waveguide 2(2L) - fixture" provided by the present invention.
[0017] Figure 5 A structural diagram of the heterogeneous integrated interconnection structure (DUT) provided by the present invention.
[0018] Figure 6 A structural diagram of "fixture - DUT - fixture" in which the radio frequency fixture is connected to the device under test provided by the present invention.
[0019] Figure 7The S-parameters of the device under test after de-embedding using the L-2L de-embedding method for heterogeneous integrated interconnect structures provided by the present invention.
[0020] Figure 8 It is a comparison chart of the S-parameters of the device under test after removing the influence of the RF fixture provided by the present invention and the ideal simulation S-parameters of the device under test. Detailed implementation manners
[0021] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0022] An embodiment of the present invention discloses a radio frequency failure detection fixture for heterogeneous integrated two-port interconnection, as Figure 1 shown. The radio frequency failure detection fixture includes a first fixture and a second fixture symmetrically arranged on both sides of the device to be detected. The first fixture and the second fixture respectively include: a radio frequency material substrate, a radio frequency port based on a coplanar waveguide, a copper through-hole, a power supply port, and a voltage detection port;
[0023] The radio frequency port based on the coplanar waveguide is arranged on the radio frequency material substrate, and a power supply port and a voltage detection port are respectively led out through the copper through-hole.
[0024] The radio frequency material substrate adopted by the present invention has excellent radio frequency performance, with low loss and high stability. The substrate is in the shape of a cuboid, and its size is adjusted according to actual needs to adapt to different types of devices. In this example, the radio frequency material substrate has a length L = 5.5 mm, a width D = 2.96 mm, and a thickness H = 0.254 mm. Four copper material ports are designed on the back of the substrate for current application, grounding, and voltage detection. The radio frequency material substrate ensures the efficient transmission of radio frequency signals by providing stable physical support and electrical performance. Its excellent material characteristics are crucial for the transmission of high-frequency signals, which can significantly reduce signal attenuation and distortion, effectively reduce parasitic effects, optimize signal integrity, and ensure the stability of the radio frequency circuit under high-frequency working conditions. The radio frequency material substrate is applicable to the frequency range from 0.1 GHz to 20 GHz and can meet the requirements of high-frequency signal transmission.
[0025] Furthermore, the RF port includes a signal terminal and a ground terminal. In this structure, the signal terminal is connected to the device under test (DUT), responsible for transmitting the RF signal from an external device to the substrate to ensure stable transmission of the RF signal. The ground terminal provides a stable reference potential for the signal, works in cooperation with the signal terminal, provides a return path, optimizes the integrity of signal transmission, and reduces noise interference. The thickness of this RF port is 0.035 mm. Through this coplanar waveguide structure, the RF signal can be transmitted between the signal terminal and the ground terminal with minimal signal loss, thus ensuring signal integrity and stability.
[0026] Specifically, the RF port includes two ground terminals located on both sides of the signal terminal.
[0027] Furthermore, the first fixture and the second fixture each include 3 copper vias. The diameter of the copper vias is 0.240 mm, and the vertical height is 0.254 mm. Two of the copper vias respectively lead out the signal terminals of the first fixture and the second fixture below the RF material substrate and connect them to the power supply port and the voltage detection port; the other two copper vias respectively lead out the two ground terminals of the first fixture and the second fixture below the RF material substrate and connect them to the ground. These copper vias not only achieve efficient electrical coupling between the signal terminal and the power supply port and the voltage detection port, but also ensure the effective connection of the ground terminal, provide a stable electrical return path for the fixture, and guarantee the integrity and accuracy of RF signal transmission.
[0028] A single RF failure detection fixture includes two power supply ports A and two voltage detection ports B. The dimensions of the four ports are all rectangular parallelepiped structures with a length of 2 mm, a width of 2 mm, and a thickness of 0.035 mm. The function of these ports is to ensure that the fixture can accurately apply current to the device under test and perform voltage measurement by providing current application and voltage detection functions, thereby improving the resistance measurement accuracy and enhancing the accuracy of failure detection. The current port is used to apply a known current. Through the connection between the current probe and the device under test, the current is transmitted into the device to simulate the load change under the actual working condition. The voltage detection port measures the voltage change on the device after applying the current through the voltage probe, thereby calculating the resistance of the device. The four-point probe method separates the current application end and the voltage detection end, avoiding the influence of contact resistance and ensuring the accuracy of the measurement result.
[0029] A kind of RF failure detection fixture for heterogeneous integrated two-port interconnection proposed by the present invention can provide reliable RF failure detection data by removing the parasitic effect of the fixture. To verify its de-embedding ability, the present invention also provides a de-embedding method for the RF failure detection fixture for heterogeneous integrated two-port interconnection, including the following steps:
[0030] Step 1: Design the RF failure detection fixture as Figure 1As shown, according to the fact that the diameter of the copper wire commonly bearing a current of less than 30 A during actual power-on and voltage detection is 1 mm, and due to process conditions, in the RF failure detection fixture, four cuboid structures made of copper with dimensions of 2 mm × 2 mm × 0.35 mm are designed below the RF substrate Rogers 5800 and connected to the signal terminal through copper vias to ensure the stability and reliability of current application and voltage detection.
[0031] Step 2: The designed RF test structure is located above the RF substrate Rogers 5800. The partial enlarged view of the first fixture on one side is as Figure 2 shown, including a signal terminal and two ground terminals, and adopting a transitional coplanar waveguide structure. All conductive materials are copper. This RF detection structure includes two ports, namely the RF port and the device-under-test port. The RF port is used for applying RF signals, and the device-under-test port is used to connect the device under test. The distance G1 between the signal terminal and the ground terminal at the RF port is 95 um, and the width G2 of the signal terminal is 100 um to adapt to common 150 um probes and achieve stable RF signal application; the width G3 between the signal terminal and the ground terminal at the device-under-test port is 90 um, and the width G4 of the signal terminal is 300 um, which can be adjusted according to the size of the specific device under test to ensure good signal coupling. In addition, the total width G4 of this fixture is 1.105 mm, and the thickness of the RF detection structure is 35 um. This design optimizes the impedance matching between the signal terminal and the ground terminal, effectively reduces parasitic effects, and improves the test accuracy.
[0032] Step 3: The designed fixture - coplanar waveguide 1 (L) - fixture structure is as Figure 3 shown. In the RF failure detection fixture, a coplanar waveguide structure with a length L of 1 mm is designed between the device-under-test port of the first fixture and the device-under-test port of the second fixture, where the lower substrate Rogers 5800 is connected to the upper side of the substrate through copper posts. This coplanar waveguide includes a signal terminal and two ground terminals. Its structural design ensures good impedance matching. The width W of the ground terminal is 1175 um, the width of the signal terminal is the same as that of the device-under-test port of the first fixture, which is 300 um, the distance between the signal terminal and the ground terminal is 90 um, and each side of the ground terminal is connected to the lower ground terminal through two copper vias.
[0033] Step 4: The designed fixture - coplanar waveguide 2 (L) - fixture structure is as Figure 4As shown in the figure. In the RF failure detection fixture, a coplanar waveguide structure with a length of 2×L is designed between the device-under-test port of the first fixture and the device-under-test port of the second fixture. The coplanar waveguide consists of a lower substrate Rogers 5800 connected to the upper side of the substrate through copper pillars. The structure includes a signal terminal and two ground terminals, and its design ensures good impedance matching. The width W of the ground terminal is 1175um, the width of the signal terminal is the same as that of the device-under-test port of the first fixture, which is 300um, the distance between the signal terminal and the ground terminal is 90um, and each side of the ground terminal is connected to the lower ground terminal through four copper vias.
[0034] Step 5: To verify the de-embedding ability of the RF failure detection fixture, a heterogeneous integrated interconnect structure (DUT) is designed as Figure 5 shown. The DUT is composed of a lower substrate Rogers 5800 connected to the coplanar waveguide on the upper side of the substrate and the ground on the lower side of the substrate through copper pillars. The distance d between the signal line and the ground is 0.1mm, and the width of the signal line is 0.3mm. Connect the designed DUT to the RF failure detection fixture to obtain the fixture-DUT-fixture structure as Figure 6 shown, and perform on-wafer tests respectively to obtain the S-parameter matrix S of the fixture-DUT-fixture structure DUTmeas , the S-parameter matrix S of the fixture-coplanar waveguide 1L-fixture structure L1 , the S-parameter matrix S of the fixture-coplanar waveguide 2L-fixture structure L2 , the reflection coefficient Γ1 of a specific mismatched load, and the reflection coefficient Γ2 of the fixture-specific mismatched load.
[0035] Step 6: Convert the S-parameter matrices of the fixture-coplanar waveguide 1L-fixture structure and the fixture-coplanar waveguide 2L-fixture structure into the corresponding ABCD matrices A L1 、A L2 ; Through matrix operations, separate the ABCD matrix A of the cascade of the first fixture and the second fixture fix , and the specific form of the ABCD matrix A of the cascade of the two fixtures obtained fix is as follows:
[0036]
[0037] where A1, B1, C1, D1 correspond to the parameters of the first row and first column, the first row and second column, the second row and second column, and the second row and second column of the ABCD matrix of the fixture-coplanar waveguide 1L-fixture structure; A2, B2, C2, D2 correspond to the parameters of the first row and first column, the first row and second column, the second row and second column, and the second row and second column of the ABCD matrix of the fixture-coplanar waveguide 2L-fixture structure
[0038] Step 7: Convert the cascaded ABCD matrix A of the first fixture and the second fixture fix into the corresponding S-parameter matrix S fix ; According to the S-parameter matrix S of the cascaded first fixture and second fixture fix , the reflection coefficient Γ1 of the specific mismatched load obtained in Step 5, and the reflection coefficient Γ2 of the fixture-specific mismatched load, extract the S-parameter matrix S of a single fixture half ; Through the S-parameter matrix S of the tested fixture-DUT-fixture structure DUTmeas and the S-parameter matrix S of a single fixture half , the parasitic parameters of the first fixture and the second fixture can be stripped to obtain the S-parameter matrix of the device under test, that is, the de-embedding of the device under test is completed;
[0039]
[0040] Step 8: Compare the S-parameter matrix after de-embedding the device under test with the simulation results of the device under test in the simulation software to verify the accuracy of the de-embedding effect.
[0041] According to Step 8, calculate the S-parameter matrix of the heterogeneous interconnect structure after de-embedding, strip the influence of the RF fixture on the DUT test, and finally obtain the S-parameters of the heterogeneous interconnect structure after stripping the influence of the RF fixture as Figure 7 shown. To verify the correctness after de-embedding, simulate the device under test in ADS, and finally obtain the comparison graph of the S-parameters after de-embedding and the S-parameters of the ideal DUT as Figure 8 shown. It can be seen that the S-parameters completely coincide from 0.1 GHz to 20 GHz, verifying the de-embedding ability of the RF failure detection fixture.
[0042] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts among the various embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the description of the method part.
[0043] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A RF failure detection fixture for heterogeneous integrated two-port interconnection, characterized in that: The RF failure detection fixture comprises a first fixture and a second fixture symmetrically arranged on both sides of the device to be detected, wherein the first fixture and the second fixture respectively comprise: a RF material substrate, a RF port based on a coplanar waveguide, a copper through hole, a power-on port, and a voltage detection port; The coplanar waveguide-based radio frequency port is arranged on the radio frequency material substrate, and a power-on port and a voltage detection port are respectively led out through the copper through-hole.
2. The RF failure detection fixture for heterogeneous integrated two-port interconnection according to claim 1, characterized in that: The RF port includes a signal terminal and a ground terminal. The signal terminal transmits the RF signal from an external device to the RF material substrate, and the ground terminal provides a stable reference potential for the RF signal.
3. The RF failure detection fixture for heterogeneous integrated two-port interconnection according to claim 2, characterized in that: The radio frequency port includes two ground terminals located at two sides of the signal terminal.
4. The RF failure detection fixture for heterogeneous integrated two-port interconnection according to claim 3 is characterized in that: The first clamp and the second clamp respectively include three copper through holes, wherein one copper through hole leads the signal end out from under the RF material substrate and connects the power-on port and the voltage detection port; the other two copper through holes lead the two grounding ends of the first clamp and the second clamp out from under the RF material substrate and connect them to the ground.