Detection method and module of semiconductor packaging structure and semiconductor packaging system

Abstract

The invention provides a semiconductor packaging structure detection method and module, and a semiconductor packaging system, and the method comprises the steps: 1), collecting operation parameters, calculating a fluctuation value through combining with a reference line, solving a technology fluctuation coefficient according to the fluctuation value, and judging whether the operation parameters exceed the standard or not; if not, executing the step 1), otherwise, executing the step 2); (2) calculating a coating thickness coefficient based on the coating times and the coating thickness of each coating, and judging whether the sealant coating is qualified or not; if yes, continuing to execute the step 2), otherwise, executing the step 3); 3) calculating an adjustment coefficient based on the process fluctuation coefficient and the coating thickness coefficient, and calculating the operation parameter and the coating thickness of the next coating according to the adjustment coefficient; and 4) feeding back and executing a subsequent glue sealing process based on the operation parameters and the coating thickness of the next coating. According to the invention, the influence of the external environment on the packaging process can be effectively reduced, so that the product qualification rate is improved; and meanwhile, the real-time performance and the accuracy of parameter adjustment are greatly improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a detection method and module for a semiconductor packaging structure and a semiconductor packaging system. Background Art

[0002] Semiconductor packaging refers to the process of processing the tested wafers into independent chips according to the product model and functional requirements. When the semiconductor is sealed, the upper mold is moved to the top of the lead frame, and then the anti-overflow cover at the bottom of the upper mold is retracted, and the upper mold is attached to the top of the lead frame. The heating rod set inside the upper mold is started, and the heating rod should be kept at 170-190℃ and kept warm for 1-2 hours. The extrusion rod at the top of the upper mold moves downward with a downward pressure of 30-50N, so that the plastic sealing liquid inside the sealing head is squeezed into the inner cavity, and then the chip is covered; among them, the parameters of the sealing are preset, and no matter what situation is encountered, the operation is carried out according to the preset parameters, and changes in the external environment often affect the stability of the parameters, resulting in a large error between the final product and the qualified product.

[0003] Therefore, how to avoid the influence of external environmental changes on the sealing process and reduce the error between the final product and the qualified product has become one of the problems that technicians in this field need to solve urgently.

[0004] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor packaging structure detection method, module and semiconductor packaging system, which are used to solve the problems in the prior art that external environmental changes affect the sealing process, and the error between the final product and the qualified product is large.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides a method for detecting a semiconductor package structure, the method comprising:

[0007] Step 1) collecting at least two operating parameters of the semiconductor encapsulation process, and calculating the fluctuation value of each operating parameter in combination with the baseline corresponding to each operating parameter, obtaining the process fluctuation coefficient according to the fluctuation value of each operating parameter, and judging whether the operating parameter exceeds the standard based on the process fluctuation coefficient; if the operating parameter does not exceed the standard, continue to execute step 1), otherwise, execute step 2);

[0008] Step 2) Calculate the coating thickness coefficient based on the coating times and the coating thickness of each coating, and determine whether the encapsulation coating is qualified based on the coating thickness coefficient; if the encapsulation coating is qualified, continue to execute Step 2), otherwise, execute Step 3);

[0009] Step 3) Calculate an adjustment coefficient based on the process fluctuation coefficient and the coating thickness coefficient, and calculate the operating parameters and the coating thickness for the next coating respectively according to the adjustment coefficient;

[0010] Step 4) Feed back the operating parameters and the coating thickness for the next coating, and execute the subsequent encapsulation process based on the operating parameters and the coating thickness for the next coating.

[0011] Optionally, the method for calculating the fluctuation value of each operating parameter includes:

[0012] Establish a two-dimensional coordinate system for the encapsulation time and each operating parameter respectively, and set a corresponding reference line in each two-dimensional coordinate system, and substitute the collected operating parameters into the corresponding two-dimensional coordinate system;

[0013] Sum the areas of the parts of the collected data above the reference line and the areas of the parts below the reference line respectively to obtain the online area and the offline area corresponding to each operating parameter;

[0014] Perform a weighted average on the online area and the offline area of each operating parameter to obtain the fluctuation value of the corresponding operating parameter.

[0015] More optionally, the fluctuation values of each operating parameter satisfy the following relational expression:

[0016]

[0017] Wherein, OP is the fluctuation value of any operating parameter; Tbs is the online area corresponding to the operating parameter, Tbx is the offline area corresponding to the operating parameter; a is the proportionality coefficient corresponding to the online area of the operating parameter, b is the proportionality coefficient corresponding to the offline area of the online area of the operating parameter, and both a and b are greater than 0.

[0018] More optionally, the process fluctuation coefficient satisfies the following relational expression:

[0019]

[0020] Wherein, X1 is the process fluctuation coefficient; OP1…OPn are the fluctuation values of each operating parameter, n is a natural number greater than or equal to 2; c1…cn are the proportionality coefficients corresponding to the fluctuation values of each operating parameter, and c1…cn are all greater than 0.

[0021] Optionally, if the process fluctuation coefficient is less than or equal to the first threshold, it is determined that the operating parameters do not exceed the standard; if the process fluctuation coefficient is greater than the first threshold, it is determined that the operating parameters exceed the standard.

[0022] More optionally, the operating parameters include the temperature of the heating rod and the pressure of the extrusion rod.

[0023] Optionally, the coating thickness coefficient satisfies the following relational expression:

[0024]

[0025] Wherein, X2 is the coating thickness coefficient; St is the number of coating times; Zt is the coating thickness; d1 is the proportionality coefficient corresponding to the number of coating times, d2 is the proportionality coefficient corresponding to the coating thickness, and both d1 and d2 are greater than 0.

[0026] Optionally, if the coating thickness coefficient is less than or equal to the second threshold, it is determined that the encapsulation coating is qualified; if the coating thickness coefficient is greater than the second threshold, it is determined that the encapsulation coating is unqualified.

[0027] More optionally, the adjustment coefficient satisfies the following relational expression:

[0028]

[0029] Wherein, Xt is the adjustment coefficient; X1 is the process fluctuation coefficient; X2 is the coating thickness coefficient; Xb is a preset standard value; β is a proportionality coefficient, greater than 0 and less than 1.

[0030] More optionally, the operating parameters of the next coating satisfy the following relational expression:

[0031]

[0032] The coating thickness of the next coating satisfies the following relational expression:

[0033]

[0034] Wherein, OP is the fluctuation value of any operating parameter; OPx is the corresponding operating parameter of the next coating; Zt is the coating thickness; Ztx is the coating thickness of the next coating; e, f, g, h are proportionality coefficients, all greater than 0.

[0035] To achieve the above object and other related objects, the present invention provides a detection module for a semiconductor package structure, which is used to implement the detection method of the semiconductor package structure. The detection module of the semiconductor package structure at least includes:

[0036] An acquisition unit, an analysis unit, a processing unit and a feedback unit;

[0037] The acquisition unit collects the operating parameters of the semiconductor encapsulation process, calculates the process fluctuation coefficient by combining the baseline corresponding to each operating parameter, and determines whether the operating parameters exceed the standard;

[0038] The analysis unit is connected to the output end of the acquisition unit. When the acquisition unit outputs an over-standard signal, it calculates the coating thickness coefficient and determines whether the encapsulation coating is qualified;

[0039] The processing unit is connected to the output ends of the acquisition unit and the analysis unit. When the analysis unit outputs an unqualified signal, it calculates the adjustment coefficient based on the process fluctuation coefficient and the coating thickness coefficient, and calculates the operating parameters and coating thickness of the next coating according to the adjustment coefficient;

[0040] The feedback unit is connected to the output end of the processing unit, and feeds back the operating parameters and coating thickness of the next coating output by the processing unit to the semiconductor encapsulation equipment.

[0041] To achieve the above object and other related objects, the present invention also provides a semiconductor packaging system, which at least includes:

[0042] A semiconductor encapsulation equipment and a detection module of the above semiconductor packaging structure.

[0043] As described above, the detection method, module and semiconductor packaging system of the semiconductor packaging structure of the present invention have the following beneficial effects:

[0044] The detection method, module and semiconductor packaging system of the semiconductor packaging structure of the present invention obtain the process fluctuation coefficient according to the actually collected operating parameters in the encapsulation process to evaluate the process fluctuation; when the process fluctuation is large, the coating thickness coefficient is obtained according to the coating information to evaluate the coating quality; finally, when the coating quality is unqualified, the parameters of the next coating are adjusted according to the process fluctuation coefficient and the coating thickness coefficient; thereby reducing the influence of the external environment on the packaging process and improving the product qualification rate.

[0045] The detection method, module and semiconductor packaging system of the semiconductor packaging structure of the present invention monitor the semiconductor encapsulation process in real time and timely adjust the later process, greatly improving the real-time performance and the accuracy of parameter adjustment. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It shows a schematic flow chart of the detection method of the semiconductor packaging structure of the present invention.

[0047] Figure 2 It shows a schematic structural diagram of the detection module of the semiconductor packaging structure of the present invention.

[0048] Figure 3Shown is a schematic structural diagram of the acquisition unit of the present invention.

[0049] Figure 4 Shown is a schematic structural diagram of the analysis unit of the present invention.

[0050] Figure 5 Shown is a schematic structural diagram of the semiconductor packaging system of the present invention.

[0051] Component label description

[0052] 1 Detection module of semiconductor packaging structure

[0053] 11 Acquisition unit

[0054] 111 Operating parameter acquisition section

[0055] 112 First calculation section

[0056] 113 First comparison section

[0057] 12 Analysis unit

[0058] 121 Second calculation section

[0059] 122 Second comparison section

[0060] 13 Processing unit

[0061] 14 Feedback unit

[0062] 2 Semiconductor encapsulation equipment Detailed implementation manners

[0063] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0064] Please refer to Figures 1 to 5 . It should be noted that the diagrams provided in this embodiment only schematically illustrate the basic concept of the present invention. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0065] As Figure 1 shown, the present invention provides a detection method for a semiconductor packaging structure. The detection method for the semiconductor packaging structure includes:

[0066] Step 1): Collect at least two operating parameters of the semiconductor encapsulation process, calculate the fluctuation values of each operating parameter by combining with the baseline corresponding to each operating parameter, obtain the process fluctuation coefficient X1 based on the fluctuation values of each operating parameter, and determine whether the operating parameter exceeds the standard based on the process fluctuation coefficient X1; if the operating parameter does not exceed the standard, continue to execute Step 1); otherwise, execute Step 2).

[0067] Specifically, it includes the following steps:

[0068] 11) Collect the operating parameters in the semiconductor encapsulation process to obtain at least two operating parameters, and the operating parameters include but are not limited to temperature, pressure, time, speed, current, voltage; they are not limited one by one here.

[0069] 12) Establish two-dimensional coordinate systems for the encapsulation time and each operating parameter respectively, set corresponding baselines in each two-dimensional coordinate system, and substitute the collected operating parameters into the corresponding two-dimensional coordinate systems; sum the areas above the baseline and the areas below the baseline of the collected data respectively for each operating parameter to obtain the online area and offline area corresponding to each operating parameter; perform weighted averaging on the online area and offline area of each operating parameter to obtain the fluctuation value of the corresponding operating parameter.

[0070] More specifically, each operating parameter and the encapsulation time correspond to a two-dimensional rectangular coordinate system. In this example, the encapsulation time is the abscissa and the operating parameter is the ordinate. Set the baseline of the operating parameter in the corresponding two-dimensional coordinate system. Since there is a deviation between the actual value and the baseline value, the collected operating parameters will fluctuate above and below the baseline. Sum the areas above the baseline and the areas below the baseline of the collected data respectively to obtain the online area and offline area corresponding to each operating parameter. Obtain the fluctuation value of the corresponding operating parameter based on the online area and offline area of each operating parameter, satisfying:

[0071]

[0072] where OP is the fluctuation value of any operating parameter; Tbs is the online area corresponding to the operating parameter, Tbx is the offline area corresponding to the operating parameter; a is the proportionality coefficient corresponding to the online area of the operating parameter, b is the proportionality coefficient corresponding to the offline area of the online area of the operating parameter, and both a and b are greater than 0. The values of a and b are determined according to the influence of the operating parameter on the encapsulation process. Different types of operating parameters (temperature, pressure, time, speed, current, voltage) have different corresponding values of a and b, which are not elaborated one by one here.

[0073] 13) Calculate the process fluctuation coefficient X1 based on the fluctuation values of each operating parameter. In this embodiment, the process fluctuation coefficient X1 satisfies:

[0074]

[0075] Wherein, OP1…OPn are the fluctuation values of each operating parameter; n is the number of operating parameters, which is a natural number greater than or equal to 2; c1…cn are the proportionality coefficients corresponding to the fluctuation values of each operating parameter, and c1…cn are all greater than 0. The values of c1…cn are determined according to the actual process and will not be elaborated here one by one.

[0076] 14) If the process fluctuation coefficient X1 is less than or equal to the first threshold, it is determined that the operating parameters do not exceed the standard, new data is continuously collected, and the process fluctuation coefficient X1 is updated; if the process fluctuation coefficient X1 is greater than the first threshold, it is determined that the operating parameters exceed the standard, and step 2) is executed. Among them, the first threshold is determined according to the actual process and will not be limited here one by one.

[0077] It should be noted that in this embodiment, the process fluctuation coefficient X1 is positively correlated with the fluctuation values of each operating parameter, that is, the greater the fluctuation values of each operating parameter, the greater the process fluctuation coefficient X1. The relationship formula between the process fluctuation coefficient X1 and the fluctuation values of each operating parameter can be set as needed, and this embodiment is not limiting. In actual use, the process fluctuation coefficient X1 can be positively correlated with the absolute values of the fluctuation values of each operating parameter, as long as the fluctuations of each operating parameter can be reflected based on the process fluctuation coefficient.

[0078] Step 2) Calculate the coating thickness coefficient X2 based on the coating times St and the coating thickness Zt of each coating, and judge whether the encapsulation coating is qualified based on the coating thickness coefficient X2; if the encapsulation coating is qualified, continue to execute step 2), otherwise, execute step 3).

[0079] Specifically, it includes the following steps:

[0080] 21) Obtain the coating times St and the coating thickness Zt, and calculate the coating thickness coefficient X2. In this embodiment, the coating thickness coefficient X2 satisfies:

[0081]

[0082] Wherein, d1 is the proportionality coefficient corresponding to the coating times St, d2 is the proportionality coefficient corresponding to the coating thickness Zt, and d1 and d2 are both greater than 0. The values of d1 and d2 are determined according to the actual process and will not be elaborated here one by one.

[0083] 22) If the coating thickness coefficient X2 is less than or equal to the second threshold, it is determined that the encapsulation coating is qualified, and the coating thickness coefficient X2 in the case where the operating parameters exceed the standard is continuously calculated; if the coating thickness coefficient X2 is greater than the second threshold, it is determined that the encapsulation coating is unqualified. Among them, the second threshold is determined according to the actual process and will not be limited here one by one.

[0084] It should be noted that in this embodiment, the coating thickness coefficient X2 is positively correlated with the coating times St and the coating thickness Zt, that is, the larger the value of the coating times St or the coating thickness Zt, the larger the coating thickness coefficient X2. The relational expression between the coating thickness coefficient X2, the coating times St, and the coating thickness Zt can be set as needed. In actual use, any relationship that can reflect the total coating thickness based on the coating thickness coefficient X2 is applicable to the present invention, not limited to this embodiment.

[0085] Step 3): Calculate the adjustment coefficient Xt based on the process fluctuation coefficient X1 and the coating thickness coefficient X2, and calculate the operating parameters and coating thickness for the next coating according to the adjustment coefficient Xt.

[0086] Specifically, it includes the following steps:

[0087] 31) Obtain the process fluctuation coefficient X1 and the coating thickness coefficient X2, and calculate the adjustment coefficient Xt. In this embodiment, the adjustment coefficient Xt satisfies:

[0088]

[0089] where Xb is a preset standard value; β is a proportionality coefficient, greater than 0 and less than 1. Xb and β can be determined according to the actual process and will not be elaborated here one by one.

[0090] 32) Calculate the operating parameters OPx for the next coating and the coating thickness Ztx for the next coating. In this embodiment, the operating parameters OPx for the next coating satisfy:

[0091]

[0092] The coating thickness Ztx for the next coating satisfies:

[0093]

[0094] where e, f, g, and h are proportionality coefficients, all greater than 0. The values of e, f, g, and h are determined according to the actual process. For different types of operating parameters, the corresponding values of e and f are also different and will not be elaborated here one by one. OP, Zt and are all terms greater than 0.

[0095] It should be noted that in this embodiment, the adjustment coefficient Xt is positively correlated with the process fluctuation coefficient X1 and the coating thickness coefficient X2, that is, the larger the process fluctuation coefficient X1 or the coating thickness coefficient X2, the larger the adjustment coefficient Xt. The relational expressions between the adjustment coefficient Xt, the process fluctuation coefficient X1, and the coating thickness coefficient X2 can be set as needed, and this embodiment is not limiting. The relational expression between the operating parameter OPx of the next coating and the adjustment coefficient Xt, and the relational expression between the coating thickness Ztx of the next coating and the adjustment coefficient Xt can be set as needed, and can adjust the operating parameters and coating thickness in the subsequent process based on the existing data when the encapsulation coating is unqualified, so that the subsequent encapsulation coating meets the qualified requirements.

[0096] Step 4) Feedback the operating parameter OPx of the next coating and the coating thickness Ztx of the next coating, and perform the subsequent encapsulation process based on the operating parameter OPx of the next coating and the coating thickness Ztx of the next coating.

[0097] Specifically, in this embodiment, the operating parameter OPx of the next coating and the coating thickness Ztx of the next coating are fed back to the corresponding sensors, and the preset of the operating parameters and coating thickness is realized through the sensors. In actual use, any part that can preset the operating parameters and coating thickness can receive the feedback signal, and this embodiment is not limiting.

[0098] The following describes the detection method of the above semiconductor packaging structure in combination with specific examples. In this example, the operating parameters include the temperature of the heating rod and the pressure of the extrusion rod.

[0099] First, perform step 1), specifically as follows:

[0100] In step 11), the temperature of the upper mold heating rod during the encapsulation process of the semiconductor is obtained in real time, and the pressure of the upper mold extrusion rod moving downward during the encapsulation process of the semiconductor is obtained.

[0101] In step 12), with the encapsulation time as the abscissa and the heating rod temperature as the ordinate, a two-dimensional rectangular coordinate system of the encapsulation time and the heating rod temperature is constructed, and a reference line of the heating rod temperature value is set in the two-dimensional coordinate system. The obtained real-time heating rod temperature data is substituted into the two-dimensional coordinate system, and the sum of the upper and lower areas of the line is compared; the sum of the graphic areas above the reference line is obtained as the online area of the heating rod temperature and marked as Tbs1, and the sum of the graphic areas below the reference line is obtained as the offline area of the heating rod temperature and marked as Tbx1. Using formula (1), the temperature fluctuation value Wb is calculated, that is In this embodiment, a1 and b1 are set to be within the range of 0 to 1. As an example, a1 takes the value of 0.521 and b1 takes the value of 0.954. Using the same method, with the encapsulation time as the abscissa and the pressure of the extrusion rod as the ordinate, a two-dimensional rectangular coordinate system is constructed; and the area Tbs2 above the extrusion rod pressure line and the area Tbx2 below the extrusion rod pressure line are obtained, and the pressure fluctuation value Pb is calculated using formula (1), that is In this embodiment, a2 and b2 are set to be within the range of 0 to 1. As an example, a2 takes the value of 0.412 and b2 takes the value of 0.358.

[0102] In step 13), the obtained temperature fluctuation value Wb and pressure fluctuation value Pb are substituted into formula (2) to calculate the process fluctuation coefficient X1, that is In this embodiment, c1 and c2 are set to be within the range of 0 to 1. As an example, c1 takes the value of 0.824 and c2 takes the value of 0.792.

[0103] In step 14), the process fluctuation coefficient X1 is compared with the first coefficient threshold, and an over-standard signal or a normal signal is obtained based on the comparison result.

[0104] It should be noted that if the value of the process fluctuation coefficient X1 exceeds the first threshold, it indicates that the operating parameters of semiconductor encapsulation fluctuate greatly, the temperature and pressure are unstable, which has a greater impact on the quality of the product, and may lead to problems such as low quality of the final packaged product and low product qualification rate; if the value of the process fluctuation coefficient X1 is less than the first threshold, it means that the operating parameters of encapsulation are normal, the impact on the quality of the final product packaging is relatively low, and the product qualification rate is relatively high.

[0105] When the over-standard signal is obtained, step 2) is executed, which is specifically as follows:

[0106] In step 21), the number of coating times St for the semiconductor wafer and the coating thickness Zt for each coating are obtained. The coating times St and the coating thickness Zt for each coating are substituted into formula (3) to calculate the coating thickness coefficient X2, that is In this embodiment, the values of d1 and d2 are limited to be within the range of 1 to 2. As an example, d1 takes the value of 1.20 and d2 takes the value of 1.42.

[0107] In step 22), the coating thickness coefficient X2 is compared with the second coefficient threshold, and a qualified signal or an unqualified signal is obtained based on the comparison result.

[0108] It should be noted that by analyzing the coating on the semiconductor surface during encapsulation to determine whether the coating is qualified, not only can the influence of encapsulation parameters on the encapsulation coating be analyzed, but also the encapsulation process during re - coating can be adjusted to ensure that the overall encapsulation coating of the semiconductor is within a reasonable range, thereby ensuring the product quality.

[0109] When the unqualified signal is obtained, step 3) is executed, specifically as follows:

[0110] In step 31), the process fluctuation coefficient X1 and the coating thickness coefficient X2 are obtained, and the adjustment coefficient Xt is calculated using formula (4), that is, In this embodiment, the value of β is limited to 0.8 - 1. As an example, β takes the value of 0.965; the value of Xb is obtained according to actual experiments.

[0111] In step 32), the adjustment coefficient Xt and the temperature fluctuation value Wb are substituted into formula (5) to calculate the temperature value Wbx to be set for the heating rod during the next coating, that is (Wb and are both greater than 0). In this embodiment, the values of e1 and f1 are limited to be greater than 1. As an example, e1 takes the value of 6.1 and f1 takes the value of 4.3. Similarly, the adjustment coefficient Xt and the pressure fluctuation value Pb are substituted into formula (5) to calculate the pressure value Pbx to be set for the heating rod during the next coating, that is (Pb and are both greater than 0). In this embodiment, the values of e2 and f2 are limited to be greater than 1. As an example, e2 takes the value of 9.5 and f2 takes the value of 4.7. Similarly, the adjustment coefficient Xt and the coating thickness Zt of each coating are substituted into formula (6) to calculate the coating thickness Ztx for the next coating, that is (Zt and are both greater than 0). In this embodiment, the values of g and h are limited to be greater than 1. As an example, g takes the value of 3.1 and h takes the value of 2.4.

[0112] It should be noted that by solving the temperature value Wbx, the downward pressure value Pbx of the extrusion rod, and the coating thickness Ztx to be set for the heating rod during the next coating, it is ensured that the final coating of the overall semiconductor is within a reasonable range, ensuring the quality of the final semiconductor packaging structure and effectively reducing the unqualified rate of the semiconductor packaging structure.

[0113] Finally, step 4) is executed. The temperature value Wbx, the downward pressure value Pbx of the extrusion rod, and the coating thickness Ztx to be set for the heating rod during the next coating are respectively sent to the corresponding sensors to preset the parameters of the heating rod, the extrusion rod, and the coating thickness to ensure that the overall coating of the semiconductor is within a reasonable range.

[0114] As shown in Figure 2 Figure [not shown], the present invention further provides a detection module 1 for a semiconductor package structure for the above-mentioned detection method of the semiconductor package structure. The detection module 1 of the semiconductor package structure includes:

[0115] An acquisition unit 11, an analysis unit 12, a processing unit 13, and a feedback unit 14.

[0116] As shown in Figure 2 Figure [not shown], the acquisition unit 11 acquires the operating parameters of the semiconductor encapsulation process, calculates the process fluctuation coefficient X1 in combination with the baseline corresponding to each operating parameter, and determines whether the operating parameters exceed the standard.

[0117] Specifically, the acquisition unit 11 is used to implement step 1) in the detection method of the semiconductor package structure, and the principle will not be elaborated here one by one. As an example, as shown in Figure 3 Figure [not shown], the acquisition unit 11 includes an operating parameter acquisition section 111, a first calculation section 112, and a first comparison section 113. The operating parameter acquisition section 111 acquires the operating parameters of the semiconductor encapsulation process, including but not limited to using sensors to acquire signals. The first calculation section 112 is connected to the output end of the operating parameter acquisition section 111, calculates the fluctuation value of each operating parameter based on each operating parameter and the corresponding baseline, and calculates the process fluctuation coefficient X1 according to the fluctuation values of each operating parameter; the first calculation section 112 can implement operations including but not limited to addition, subtraction, multiplication, and division. The first comparison section 113 is connected to the output end of the first calculation section 112, compares the calculated process fluctuation coefficient X1 with a first threshold value to determine whether the operating parameters exceed the standard, and outputs a corresponding over-standard signal or normal signal.

[0118] As shown in Figure 2 Figure [not shown], the analysis unit 12 is connected to the output end of the acquisition unit 11. When the acquisition unit 11 outputs an over-standard signal, it calculates the coating thickness coefficient X2 and determines whether the encapsulation coating is qualified.

[0119] Specifically, the analysis unit 12 is used to implement step 2) in the detection method of the semiconductor package structure to analyze the coating on the semiconductor wafer after encapsulation, and the principle will not be elaborated here one by one. As an example, as shown in Figure 4 It should be noted that the figures mentioned in the original text are not clearly shown in the provided content, so the translation uses "[not shown]" to indicate the missing figure references. You may need to replace it with the actual figure numbers or descriptions according to the specific situation.As shown, the analysis unit 12 includes a second calculation unit 121 and a second comparison unit 122. The second calculation unit 121 calculates a coating thickness coefficient X2 based on the coating times and the coating thickness for each coating; the second calculation unit 121 can perform operations including but not limited to addition, subtraction, multiplication, and division. The second comparison unit 122 is connected to the output end of the second calculation unit 121, compares the calculated coating thickness coefficient X2 with a second threshold value, thereby determining whether the encapsulation coating is qualified, and outputs a corresponding qualified signal or unqualified signal.

[0120] As Figure 2 shown, the processing unit 13 is connected to the output ends of the acquisition unit 11 and the analysis unit 12. When the analysis unit 12 outputs an unqualified signal, it calculates an adjustment coefficient Xt based on the process fluctuation coefficient X1 and the coating thickness coefficient X2, and calculates the operating parameters and coating thickness for the next coating respectively according to the adjustment coefficient Xt.

[0121] Specifically, the processing unit 13 is used to implement step 3) in the detection method of the semiconductor encapsulation structure, so as to adjust the parameters of the next coating when the coating is unqualified. The principle will not be elaborated here one by one. The processing unit 13 mainly performs calculation tasks, including but not limited to addition, subtraction, multiplication, and division.

[0122] As Figure 2 shown, the feedback unit 14 is connected to the output end of the processing unit 13, and feeds back the operating parameters and coating thickness for the next coating output by the processing unit 13 to the semiconductor encapsulation equipment, so as to realize the parameter presetting for the next coating.

[0123] It should be noted that any structure that can implement the detection method of the semiconductor encapsulation structure is applicable to the detection module 1 of the semiconductor encapsulation structure of the present invention, not limited to this embodiment.

[0124] As Figure 5 shown, the present invention also provides a semiconductor encapsulation system, which includes: a detection module 1 for semiconductor encapsulation structures and a semiconductor encapsulation equipment 2. The detection module 1 for semiconductor encapsulation structures obtains operating parameters from the semiconductor encapsulation equipment 2, adjusts the parameters for the next coating according to information such as operating parameters and coating thickness, and feeds them back to the semiconductor encapsulation equipment 2. The semiconductor encapsulation equipment 12 performs encapsulation based on the originally set parameters and the parameters for the next coating adjusted according to external environment changes.

[0125] The detection method, module and semiconductor packaging system of the semiconductor packaging structure of the present invention can effectively reduce the influence of the external environment on the packaging process, thereby improving the product qualification rate. At the same time, the semiconductor packaging process is monitored in real time, and the subsequent process is adjusted in time, greatly improving the real-time performance and the accuracy of parameter adjustment.

[0126] In summary, the present invention provides a detection method, module and semiconductor packaging system for a semiconductor packaging structure, including: Step 1) Collect at least two operating parameters of the semiconductor encapsulation process, calculate the fluctuation value of each operating parameter in combination with the baseline corresponding to each operating parameter, obtain the process fluctuation coefficient according to the fluctuation value of each operating parameter, and judge whether the operating parameter exceeds the standard based on the process fluctuation coefficient; if the operating parameter does not exceed the standard, continue to execute Step 1), otherwise, execute Step 2); Step 2) Calculate the coating thickness coefficient based on the coating times and the coating thickness of each coating, and judge whether the encapsulation coating is qualified based on the coating thickness coefficient; if the encapsulation coating is qualified, continue to execute Step 2), otherwise, execute Step 3); Step 3) Calculate the adjustment coefficient based on the process fluctuation coefficient and the coating thickness coefficient, and calculate the operating parameter and coating thickness of the next coating according to the adjustment coefficient; Step 4) Feed back the operating parameter and coating thickness of the next coating, and execute the subsequent encapsulation process based on the operating parameter and coating thickness of the next coating. The present invention can effectively reduce the influence of the external environment on the packaging process, thereby improving the product qualification rate; at the same time, the real-time performance and the accuracy of parameter adjustment are greatly improved. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0127] The above embodiments are only illustrative of the principles and effects of the present invention, and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A detection method for a semiconductor package structure, characterized in that, The detection method of the semiconductor packaging structure includes: Step 1) Collect at least two operating parameters of the semiconductor encapsulation process, calculate the fluctuation values of the operating parameters in combination with the baseline corresponding to each operating parameter, obtain the process fluctuation coefficient according to the fluctuation values of the operating parameters, and judge whether the operating parameters exceed the standard based on the process fluctuation coefficient; if the operating parameters do not exceed the standard, continue to execute Step 1), otherwise, execute Step 2); Step 2) Calculate the coating thickness coefficient based on the coating times and the coating thickness of each coating, and judge whether the encapsulation coating is qualified based on the coating thickness coefficient; if the encapsulation coating is qualified, continue to execute Step 2), otherwise, execute Step 3); Step 3) Calculate the adjustment coefficient based on the process fluctuation coefficient and the coating thickness coefficient, and calculate the operating parameters and the coating thickness of the next coating according to the adjustment coefficient; Step 4) Feedback the operating parameters and the coating thickness of the next coating, and execute the subsequent encapsulation process based on the operating parameters and the coating thickness of the next coating.

2. The detection method for a semiconductor package structure according to claim 1, characterized in that: The method for calculating the fluctuation value of each operating parameter includes: Respectively establish a two-dimensional coordinate system of the encapsulation time and each operating parameter, and set the corresponding baseline in each two-dimensional coordinate system, and substitute the collected operating parameters into the corresponding two-dimensional coordinate system; Respectively sum the areas of the data collected above the baseline and the areas below the baseline to obtain the online area and the offline area corresponding to each operating parameter; Perform weighted averaging on the online area and the offline area of each operating parameter to obtain the fluctuation value of the corresponding operating parameter.

3. The detection method for a semiconductor package structure according to claim 2, characterized in that: The fluctuation values of each operating parameter satisfy the following relationship: Where OP is the fluctuation value of any operating parameter; Tbs is the online area corresponding to the operating parameter, Tbx is the offline area corresponding to the operating parameter; a is the proportionality coefficient corresponding to the online area of the operating parameter, b is the proportionality coefficient corresponding to the offline area of the online area of the operating parameter, and both a and b are greater than 0.

4. The detection method for a semiconductor package structure according to claim 2, characterized in that: The process fluctuation coefficient satisfies the following relationship: Where X1 is the process fluctuation coefficient; OP1…OPn are the fluctuation values of each operating parameter, and n is a natural number greater than or equal to 2; c1…cn are the proportionality coefficients corresponding to the fluctuation values of each operating parameter, and c1…cn are all greater than 0.

5. The detection method for a semiconductor package structure according to claim 1, characterized in that: If the process fluctuation coefficient is less than or equal to the first threshold, it is determined that the operating parameters do not exceed the standard. If the process fluctuation coefficient is greater than the first threshold, it is determined that the operating parameters exceed the standard.

6. The detection method for a semiconductor package structure according to any one of claims 1-5, characterized in that: The operating parameters include the temperature of the heating rod and the pressure of the extrusion rod.

7. The detection method for a semiconductor package structure according to claim 1, characterized in that: The coating thickness coefficient satisfies the following relationship: Where X2 is the coating thickness coefficient; St is the coating times; Zt is the coating thickness; d1 is the proportionality coefficient corresponding to the coating times, d2 is the proportionality coefficient corresponding to the coating thickness, and both d1 and d2 are greater than 0.

8. The detection method for a semiconductor package structure according to claim 1, characterized in that: If the coating thickness coefficient is less than or equal to the second threshold, it is determined that the encapsulation coating is qualified. If the coating thickness coefficient is greater than the second threshold, it is determined that the encapsulation coating is unqualified.

9. The detection method for a semiconductor package structure according to any one of claims 1-5, 7-8, characterized in that: The adjustment coefficient satisfies the following relationship: Where Xt is the adjustment coefficient; X1 is the process fluctuation coefficient; X2 is the coating thickness coefficient; Xb is the preset standard value; β is the proportionality coefficient, greater than 0 and less than 1.

10. The detection method for a semiconductor package structure according to claim 9, characterized in that: The operating parameters for the next coating satisfy the following relationship: The coating thickness for the next coating satisfies the following relationship: Where OP is the fluctuation value of any operating parameter; OPx is the corresponding operating parameter for the next coating; Zt is the coating thickness; Ztx is the coating thickness for the next coating; and e, f, g, h are proportionality coefficients, all greater than 0.

11. A detection module for a semiconductor package structure, which is used to implement the detection method of the semiconductor package structure described in any one of claims 1-10, characterized in that, The detection module of the semiconductor packaging structure at least includes: A collection unit, an analysis unit, a processing unit, and a feedback unit; The collection unit collects the operating parameters of the semiconductor encapsulation process, calculates the process fluctuation coefficient in combination with the baseline corresponding to each operating parameter, and determines whether the operating parameters exceed the standard; The analysis unit is connected to the output end of the collection unit. When the collection unit outputs an over-standard signal, it calculates the coating thickness coefficient and determines whether the encapsulation coating is qualified; The processing unit is connected to the output ends of the collection unit and the analysis unit. When the analysis unit outputs an unqualified signal, it calculates the adjustment coefficient based on the process fluctuation coefficient and the coating thickness coefficient, and calculates the operating parameters and coating thickness for the next coating according to the adjustment coefficient; The feedback unit is connected to the output end of the processing unit, and feeds back the operating parameters and coating thickness for the next coating output by the processing unit to the semiconductor encapsulation equipment.

12. A semiconductor package system, characterized in that, The semiconductor packaging system at least includes: Semiconductor encapsulation equipment and the detection module of the semiconductor packaging structure as claimed in claim 11.

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