Display panel and display device

By reducing the transmittance of purple-up light in the transmission area of ​​the low-resolution area of ​​the display panel, the problem of organic film degassing caused by purple-up light is solved, and the reliability of the display panel is improved.

CN120187243APending Publication Date: 2025-06-20LG DISPLAY CO LTD
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Patent Information

Application Number
CN202411143563.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-20
Filing Date
2024-08-20
Publication Date
2025-06-20

AI Technical Summary

Technical Problem

UV light introduced in the transmissive region of the low resolution region of the display panel causes degassing of the organic film, resulting in pixel shrinkage, chromatic aberration and brightness, affecting the reliability of the display panel.

Method used

By reducing the transmittance of ultraviolet light in the transmission area of ​​the low resolution area of ​​the display panel, for example, by removing the cathode and not setting the sub-pixels and signal lines, and providing a second touch interlayer insulating film in the transmission area to reduce the transmission area.

Benefits of technology

It effectively reduces the UV transmittance in the transmitted area of ​​the low-resolution area, improves the reliability of the display panel, and prevents pixel shrinkage and chromatic aberration or brightness reduction.

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Abstract

Disclosed is a display panel and a display device, the display panel including: a first region including a plurality of first pixel regions in each of which a light emitting element is disposed and a plurality of transmissive regions each of which overlaps an opening of a cathode of the light emitting element; a second region including a plurality of second pixel regions and having a higher pixel density than the first region; a touch sensor disposed in the first region and the second region, and including a touch sensor metal and a bridge metal in different layers; a first touch interlayer insulating film disposed between the touch sensor metal and the bridge metal in the first region and the second region; and a second touch interlayer insulating film disposed on the first touch interlayer insulating film in the plurality of transmission regions of the first region and the second region.
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Description

Technical Field

[0001] The present disclosure relates to a display panel and a display device including the display panel. Background Art

[0002] Specific examples of flat panel display devices include liquid crystal display devices, organic light emitting display devices, inorganic light emitting display devices, quantum dot display devices, and the like.

[0003] In addition to the image display function, such a display device can provide a photographing function, a biometric function, and the like. To this end, the display device can be equipped with elements such as a camera and a detection sensor.

[0004] These elements can be disposed in a border area of the display panel, in a notch area at an end (e.g., an upper end) of the screen of the display panel, or in a perforation in the screen.

[0005] Recently, in order to further expand the screen or display area of the display panel, a technique has been proposed in which a region having a low pixel density or a low resolution is defined in the screen or display area of the display panel and an infrared sensor or an infrared camera is placed below the region to recognize a face.

[0006] In addition, a technique has been proposed in which a fingerprint sensor is placed below a partial area of a high-resolution area (a region having a higher pixel density than the low-resolution area) of the display panel to recognize a fingerprint.

[0007] The descriptions provided in the background art section should not be considered as prior art merely because they are mentioned in or associated with the background art section. The background art section may include information describing one or more aspects of the subject technology. Summary of the Invention

[0008] In order to perform accurate face recognition, the transmittance of infrared light (e.g., 940 nm wavelength) can be increased in a transmissive area of a low-resolution area of the display panel. To this end, sub-pixels and signal lines are not disposed in the transmissive area of the low-resolution area. In particular, a cathode of a light emitting element that is normally formed in the entire display area is also removed from the transmissive area of the low-resolution area.

[0009] Due to this structure of the low-resolution area, when the display panel is exposed to sunlight for a long time or when UV reliability is evaluated assuming such a situation, ultraviolet light introduced through the transmissive area of the low-resolution area causes outgassing of the organic film below the cathode.

[0010] This outgassing causes reliability problems such as shrinkage of pixels and color difference or brightness reduction of the display panel.

[0011] Accordingly, the inventors of the present disclosure have developed a display panel and a method of manufacturing the same that can reduce the transmittance of ultraviolet light in the transmissive regions of low-resolution regions to reduce such reliability problems.

[0012] The present disclosure provides a display panel that can reduce the transmittance of ultraviolet light in the transmissive regions of low-resolution regions and a display device including the display panel.

[0013] The object according to the present disclosure is not limited to the above object. Other objects and advantages according to the present disclosure that are not mentioned can be understood based on the following description and can be more clearly understood based on the embodiments according to the present disclosure. In addition, it should be readily understood that the objects and advantages according to the present disclosure can be achieved by the manner shown in the claims or a combination thereof.

[0014] A display panel according to an exemplary embodiment of the present disclosure includes: a first region including a plurality of first pixel regions and a plurality of transmissive regions, wherein a light-emitting element is disposed in each first pixel region, and each transmissive region overlaps an opening of a cathode of the light-emitting element; a second region including a plurality of second pixel regions and having a higher pixel density than the first region; a touch sensor disposed in the first region and the second region and including a touch sensor metal and a bridging metal located in different layers; a first touch interlayer insulating film disposed between the touch sensor metal and the bridging metal in the first region and the second region; and a second touch interlayer insulating film disposed on the first touch interlayer insulating film in the plurality of transmissive regions of the first region and the second region.

[0015] A display device according to an exemplary embodiment of the present disclosure includes: a display panel including a display region and a non-display region, wherein the display region includes a first region and a second region, the first region includes a plurality of first pixel regions and a plurality of transmissive regions, the second region includes a plurality of second pixel regions and has a higher pixel density than the first region, wherein a light-emitting element is disposed in each first pixel region, and each transmissive region overlaps an opening of a cathode of the light-emitting element; an infrared sensor overlapping the first region and located on a rear surface of the display panel; and a fingerprint sensor overlapping the second region and located on the rear surface of the display panel, and the display panel includes: a touch sensor disposed in the first region and the second region and including a touch sensor metal and a bridging metal located in different layers; a first touch interlayer insulating film disposed between the touch sensor metal and the bridging metal in the first region and the second region; and a second touch interlayer insulating film disposed on the first touch interlayer insulating film in the plurality of transmissive regions of the first region and the second region.

[0016] Specific details of other exemplary embodiments are included in the detailed description and the drawings.

[0017] According to an exemplary embodiment of the present disclosure, while ensuring a high transmittance of infrared light (e.g., 940 nm wavelength) in the transmissive region of the low-resolution region for accurate face recognition, the transmittance of ultraviolet light in the transmissive region of the low-resolution region can be reduced. Therefore, even when the display panel is exposed to sunlight for a long time, the reliability of the display panel can be improved.

[0018] According to an exemplary embodiment of the present disclosure, while ensuring a high transmittance of infrared light with a first wavelength (e.g., 940 nm wavelength) in the transmissive region of the low-resolution region for accurate face recognition, the transmittance of infrared light with a second wavelength (e.g., 1300 nm wavelength) longer than the first wavelength can be increased in the fingerprint recognition region. Therefore, in addition to accurate face recognition, the fingerprint recognition rate can be improved, and fingerprint recognition errors can be prevented.

[0019] The effects of the present disclosure are not limited to the above effects, and those skilled in the art will clearly understand other effects not mentioned from the following description.

[0020] It should be understood that the foregoing general description and the following detailed description are both exemplary and explanatory and are intended to provide further explanation of the claimed inventive concept. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this application. The drawings illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure. In the drawings:

[0022] Figure 1 is a plan view of a display device according to an exemplary embodiment of the present disclosure.

[0023] Figure 2 is a plan view of a low-resolution region of a display device according to an exemplary embodiment of the present disclosure.

[0024] Figure 3 is along Figure 2 a cross-sectional view taken along line III-III in

[0025] Figure 4 is a plan view of a fingerprint recognition region of a display device according to an exemplary embodiment of the present disclosure.

[0026] Figure 5 is along Figure 4 a cross-sectional view taken along line V-V in

[0027] Figure 6It is a plan view showing a normal area of a display device according to an exemplary embodiment of the present disclosure.

[0028] Figures 7A to 7F It is a cross-sectional view showing a method of manufacturing a display device according to an exemplary embodiment of the present disclosure.

[0029] Throughout the drawings and the detailed description, unless otherwise specified, the same reference numerals should be understood to represent the same elements, features, and structures. For clarity, illustration, and convenience, the relative dimensions of these elements may be exaggerated and described. Detailed Description

[0030] Now, embodiments of the present disclosure will be described in detail, and examples thereof may be shown in the drawings. The progress of the described processing steps and / or operations is merely an example; however, the order of the steps and / or operations is not limited to the order set forth herein and may be changed as known in the art, except for steps and / or operations that must occur in a specific order. The names of the various elements used in the following description may be chosen merely for the convenience of writing the specification and may thus be different from the names used in actual products.

[0031] Referring to the embodiments described in detail below in conjunction with the drawings, the advantages and features of the present disclosure and the methods of achieving these advantages and features will become apparent. However, the present disclosure is not limited to the embodiments disclosed below, but may be implemented in various different forms. Therefore, these embodiments are set forth merely to make the present disclosure complete and to fully inform those of ordinary skill in the art to which the present disclosure pertains of the scope of the present disclosure.

[0032] For simplicity and clarity of illustration, the elements in the drawings are not necessarily drawn to scale. The same reference numerals in different drawings represent the same or similar elements and thus perform similar functions. In addition, for simplicity of description, the description and details of well-known steps and elements are omitted. Furthermore, in the following detailed description of the present disclosure, numerous specific details are set forth to provide a thorough understanding of the present disclosure. However, it should be understood that the present disclosure may be practiced without these specific details. In other instances, well-known methods, processes, components, and circuits have not been described in detail so as not to unnecessarily obscure various aspects of the present disclosure. Examples of various embodiments are further shown and described below. It should be understood that the description herein is not intended to limit the claims to the specific embodiments described. Instead, the present disclosure is intended to cover alternatives, modifications, and equivalents that may be included within the spirit and scope of the present disclosure as defined by the appended claims.

[0033] The shapes, dimensions, ratios, angles, quantities, etc. disclosed in the drawings used to illustrate the embodiments of the present disclosure are illustrative, and the present disclosure is not limited thereto.

[0034] The terms used herein are for the purpose of describing particular embodiments only and are not intended to limit the present disclosure. As used herein, unless the context clearly dictates otherwise, the singular forms “a,” “an,” and “the” are also intended to include the plural forms. It should also be understood that the terms “comprises,” “comprising,” “has,” “having,” “contains,” and “containing,” when used in this specification, specify the presence of the stated features, integers, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and / or portions thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one,” when preceding a list of elements, can modify the entire list of elements and not just individual elements in the list. When interpreting numerical values, there may be errors or tolerances even if not explicitly described.

[0035] In addition, it should also be understood that when a first element or layer is referred to as being “on” a second element or layer, the first element or layer can be directly disposed on the second element or layer, or can be indirectly disposed on the second element or layer and a third element or layer is disposed between the first element or layer and the second element or layer.

[0036] It should be understood that when an element or layer is referred to as “connected to” or “coupled to” another element or layer, the one element or layer can be directly on or connected to or coupled to the other element or layer, or there can be one or more intermediate elements or layers. In addition, it should also be understood that when an element or layer is referred to as being “between” two elements or layers, the one element or layer can be the only element or layer between the two elements or layers, or there can also be one or more intermediate elements or layers.

[0037] In addition, as used herein, when a layer, film, region, plate, etc. is disposed “on” or “on top of” another layer, film, region, plate, etc., the former can directly contact the latter, or another layer, film, region, plate, etc. is disposed between the former and the latter. As used herein, when a layer, film, region, plate, etc. is directly disposed “on” or “on top of” another layer, film, region, plate, etc., the former directly contacts the latter, and no other layer, film, region, plate, etc. is disposed between the former and the latter. In addition, as used herein, when a layer, film, region, plate, etc. can be disposed “under” or “beneath” another layer, film, region, plate, etc., the former can directly contact the latter, or another layer, film, region, plate, etc. can be disposed between the former and the latter. As used herein, when a layer, film, region, plate, etc. is directly disposed “under” or “beneath” another layer, film, region, plate, etc., the former directly contacts the latter, and no other layer, film, region, plate, etc. is disposed between the former and the latter.

[0038] Terms such as "lower", "bottom", "upper", "top", etc. may be used herein to describe the relationship between elements as shown in the accompanying drawings. It should be understood that these terms are spatially relative and are based on the orientation depicted in the drawings.

[0039] When describing a temporal relationship, for example, when describing the temporal sequence between two events such as "after...", "subsequently...", "before...", etc., unless "immediately after...", "immediately subsequently...", or "immediately before..." is indicated, another event may occur therebetween.

[0040] When an implementation can be realized differently, the functions or operations specified in a particular block may occur in an order different from the order specified in the flowchart. For example, two successive blocks may actually be executed substantially simultaneously, or the two blocks may be executed in the reverse order depending on the functions or operations involved.

[0041] It should be understood that although terms such as "first", "second", "third", "A", "B", "(a)", "(b)", etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, without departing from the spirit and scope of the present disclosure, the first element, component, region, layer, or part described below may be referred to as the second element, component, region, layer, or part.

[0042] The features of the various embodiments of the present disclosure may be partially or fully combined with each other and may be technically related or operable with each other. These embodiments may be implemented independently of each other and may be implemented together in an associated relationship.

[0043] When interpreting a numerical value, unless otherwise explicitly described, the value is interpreted as including the error range.

[0044] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. It should also be understood that terms (e.g., terms defined in a common dictionary) should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and should not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0045] As used herein, terms such as "embodiment", "example", "aspect", etc. should not be construed as any aspect or design described being more preferred or advantageous than other aspects or designs.

[0046] In addition, the term "or" means "inclusive or" rather than "exclusive or". That is, unless otherwise specified or clear from the context, the statement "x uses a or b" refers to any one of the natural inclusive arrangements.

[0047] The terms used in the following description have been selected as common terms in the relevant technical field. However, depending on the development and / or changes of the technology, convention, preference of those skilled in the art, etc., there may be other terms in addition to these terms. Therefore, the terms used in the following description should not be construed as limiting the technical concept, but should be understood as examples of terms for illustrating embodiments.

[0048] In addition, in specific cases, the terms can be arbitrarily selected by the applicant, and in such cases, their detailed meanings will be described in the corresponding description part. Therefore, the terms used in the following description should not be understood merely based on the name of the term, but also based on the meaning of the term and the overall content of the specific embodiment.

[0049] Hereinafter, a display device according to an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0050] Figure 1 is a plan view showing a display device according to an exemplary embodiment of the present disclosure.

[0051] Referring to Figure 1 , a display device 100 according to an exemplary embodiment of the present disclosure may include a display panel 110 that displays an image.

[0052] The display panel 110 may include a display area DA in which a plurality of pixels are arranged to display an image and a non-display area NDA that does not display an image.

[0053] Each pixel in the display area DA includes sub-pixels of different colors to present the color of the image. Each sub-pixel may include a light-emitting element and a sub-pixel circuit that operates the light-emitting element.

[0054] The non-display area NDA can be an adjacent area or a surrounding area of the display area DA. Various signal lines can be disposed in the non-display area NDA, and various driving circuits can be connected to or disposed in the non-display area NDA. As an example, the non-display area NDA can be bent to be at least partially invisible from the front, or can be at least partially blocked by the housing. The embodiments are not limited thereto. As an example, the non-display area NDA can be not bent or not blocked by the housing. The non-display area NDA is also referred to as a border or a border area.

[0055] The display area DA can include a normal area NA, a fingerprint recognition area FSA, and a low-resolution area LA, but is not limited thereto. As an example, the fingerprint recognition area FSA and / or the low-resolution area LA can be omitted. The low-resolution area LA can be a first area, the fingerprint recognition area FSA can be a second area, and the normal area NA can be a third area. The display area DA can also include a camera hole CA extending through the display panel 110, but is not limited thereto. Alternatively, in an exemplary embodiment, the display area DA can include a camera area that is the same as or similar to the low-resolution area LA instead of the camera hole CA.

[0056] The normal area NA and the fingerprint recognition area FSA of the display area DA can have the same pixel density or resolution, but are not limited thereto. As an example, the normal area NA and the fingerprint recognition area FSA of the display area DA can have different pixel densities or resolutions. As an example, the normal area NA can have a higher or lower pixel density or resolution than the fingerprint recognition area FSA.

[0057] The low-resolution area LA of the display area DA can have a lower pixel density or a lower resolution than the normal area NA or the fingerprint recognition area FSA. The pixel density can be interpreted as pixels per inch (PPI), which represents the number of pixels per unit area.

[0058] As an example, the low-resolution area LA of the display area DA can include a plurality of transmissive areas arranged between a plurality of sub-pixels, but is not limited thereto. As an example, each transmissive area can not include sub-pixels and signal lines. Therefore, the low-resolution area LA of the display area DA can have a lower pixel density than the normal area NA and / or the fingerprint recognition area FSA.

[0059] As an example, the normal area NA and the fingerprint recognition area FSA of the display area DA can have a higher pixel density than the low-resolution area LA of the display area DA. The normal area NA and the fingerprint recognition area FSA of the display area DA can be high-resolution areas.

[0060] The sizes of multiple sub-pixels in the low-resolution area LA can be larger than those of multiple sub-pixels in the normal area NA and the fingerprint recognition area FSA. The shapes of multiple sub-pixels in the low-resolution area LA can be different from those of multiple sub-pixels in the normal area NA and the fingerprint recognition area FSA.

[0061] The display device 100 may include a touch sensor disposed within the display panel 110. The touch sensor may be disposed in the display area DA. The touch sensor may be configured in a grid type. The grid-type touch sensor may include multiple openings, and each opening may be positioned to correspond to the light-emitting area of a sub-pixel. The size of each opening may be larger than the size of the light-emitting area of the sub-pixel. The sizes of multiple openings of the touch sensor disposed in the low-resolution area LA may be larger than the sizes of multiple openings of the touch sensor disposed in the normal area NA and the fingerprint recognition area FSA.

[0062] The display device 100 may include multiple elements (e.g., optical elements) disposed below the rear surface of the display panel 110.

[0063] An image sensor (or camera) that captures an image in the direction of the front surface of the display panel 110 may be disposed below the camera hole CA of the display panel 110. The image sensor (or camera) may be disposed to overlap with the camera hole CA of the display panel 110. The image sensor (or camera) receives light (e.g., visible light or invisible light) that has passed through the camera hole CA of the display panel 110.

[0064] As an example, an infrared sensor (or infrared camera) for face recognition, for example, may be disposed below the low-resolution area LA of the display panel 110, but is not limited thereto. The infrared sensor (or infrared camera) may be disposed to overlap with the low-resolution area LA of the display panel 110. The infrared sensor (or infrared camera) receives light (e.g., infrared light) that has passed through the low-resolution area LA (especially multiple transmissive areas) of the display panel 110.

[0065] A fingerprint sensor may be disposed below the fingerprint recognition area FSA of the display panel 110. The fingerprint sensor may be disposed to overlap with the fingerprint recognition area FSA of the display panel 110. The fingerprint sensor receives light (e.g., infrared light) that has passed through the fingerprint recognition area FSA of the display panel 110.

[0066] Figure 2 is a plan view showing the low-resolution area LA of a display device according to an exemplary embodiment of the present disclosure. Figure 3 is along Figure 2A cross-sectional view taken along line III-III in []. Hereinafter, an example will be described in which one pixel PX is composed of a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3. However, this is merely an example for ease of description, and one pixel may be composed of red sub-pixels, green sub-pixels, blue sub-pixels, white sub-pixels, or sub-pixels of other colors.

[0067] Referring to Figure 2 , the low-resolution region LA of the display panel 110 includes a plurality of first pixel regions PA1 and a plurality of transmissive regions TA.

[0068] For example, in the low-resolution region LA, the plurality of first pixel regions PA1 and the plurality of transmissive regions TA may be alternately arranged, but are not limited thereto. As an example, the plurality of first pixel regions PA1 and the plurality of transmissive regions TA may be alternately arranged in one or more directions, but are not limited thereto. In the low-resolution region LA, the plurality of first pixel regions PA1 and the plurality of transmissive regions TA may be arranged in a ratio of 1:1, but are not limited thereto. On the contrary, in order to further increase the light transmittance of the low-resolution region LA, the plurality of first pixel regions PA1 and the plurality of transmissive regions TA may be arranged in a ratio of 1:3. By adjusting the size (or area) and number of the plurality of transmissive regions TA, the light transmittance of the low-resolution region LA can be adjusted. The embodiments are not limited thereto. As an example, the plurality of first pixel regions PA1 and the plurality of transmissive regions TA may be arranged in a ratio greater than 1:1, a ratio between 1:1 and 1:3, or a ratio less than 1:3.

[0069] A plurality of sub-pixels may be arranged in each first pixel region PA1. For example, the plurality of sub-pixels may include a red sub-pixel SP1 that emits red light, a green sub-pixel SP2 that emits green light, and a blue sub-pixel SP3 that emits blue light, but are not limited thereto. For example, each first pixel region PA1 may include two green sub-pixels SP2 spaced apart from each other. One red sub-pixel SP1, at least one green sub-pixel SP2, and one blue sub-pixel SP3 may form one pixel PX. Different from the illustration, one red sub-pixel SP1, one green sub-pixel SP2, one blue sub-pixel SP3, and one white sub-pixel may form one pixel PX. The white sub-pixel is a sub-pixel that emits white light. The embodiments are not limited thereto. As an example, each first pixel region PA1 may include one or more red sub-pixels SP1, one or more green sub-pixels SP2, and one or more blue sub-pixels SP3. As an example, one or more white sub-pixels may also be included. As an example, sub-pixels of other colors may be additionally or alternatively included.

[0070] The sizes of multiple first pixel regions PA1 in the low-resolution region LA are larger than those of multiple second pixel regions PA2 in the fingerprint recognition region FSA (see Figure 4 ), and those of multiple third pixel regions PA3 in the normal region NA (see Figure 6 ). The sizes of multiple sub-pixels SP1, SP2, and SP3 in the low-resolution region LA are larger than those of multiple sub-pixels SP1, SP2, and SP3 in the fingerprint recognition region FSA and those of multiple sub-pixels SP1, SP2, and SP3 in the normal region NA.

[0071] In the region between the first pixel regions PA1, various signal lines including gate lines, data lines, etc. can be provided.

[0072] To increase the light transmittance of the transmissive region TA, the sub-pixels and signal lines may not be provided in each transmissive region TA. The cathodes CE of the light-emitting elements ED may not be provided in each transmissive region TA. As an example, the cathodes CE of the light-emitting elements formed in the entire display region DA may not be formed in multiple transmissive regions TA. The multiple transmissive regions TA may correspond to the openings of the cathodes CE. The multiple transmissive regions TA may overlap with the openings of the cathodes CE respectively. As an example, the signal lines may be provided to bypass the multiple transmissive regions TA.

[0073] The grid-type touch sensor TS provided in the low-resolution region LA may include multiple first openings and multiple second openings. Each first opening may be positioned to correspond to the light-emitting regions of each of the sub-pixels SP1, SP2, and SP3. The size of each first opening may be larger than the size of the light-emitting regions of each of the sub-pixels SP1, SP2, and SP3. The multiple second openings may be positioned to correspond to the multiple transmissive regions TA in the low-resolution region LA. The sizes of the multiple second openings may be larger than the sizes of the multiple transmissive regions TA in the low-resolution region LA.

[0074] Referring to Figure 3 , the stack structure of the first pixel region PA1 included in the low-resolution region LA will be described.

[0075] Referring to Figure 3, the substrate SUB may include a first substrate SUB1, an interlayer insulating film IPD, and a second substrate SUB2. The interlayer insulating film IPD may be located between the first substrate SUB1 and the second substrate SUB2. By constructing the substrate SUB with the first substrate SUB1, the interlayer insulating film IPD, and the second substrate SUB2, moisture penetration can be prevented or reduced. For example, the first substrate SUB1 and the second substrate SUB2 may be polyimide (PI) substrates, but are not limited thereto. As an example, the first substrate SUB1 and the second substrate SUB2 may be made of any other insulating material such as glass, polycarbonate, polyethylene, etc. For example, the interlayer insulating film IPD may be made of an inorganic material. The embodiments are not limited thereto. As an example, the substrate SUB may include a single substrate without any interlayer insulating film, or may include more than two substrates with or without an interlayer insulating film interposed therebetween.

[0076] A multi-buffer layer MBUF may be provided on the second substrate SUB2, and a light-blocking layer BSM that blocks light may be provided on the multi-buffer layer MBUF. For example, the multi-buffer layer MBUF may be formed of a single layer or multiple layers of an inorganic material. For example, the light-blocking layer BSM may be formed of a single layer or multiple layers of a metal material. As an example, the multi-buffer layer MBUF and / or the light-blocking layer BSM may be omitted according to the design.

[0077] An active buffer layer ABUF may be provided on the light-blocking layer BSM. The active layer ACT of the thin film transistor TFT may be provided on the active buffer layer ABUF. For example, the active buffer layer ABUF may be formed of a single layer or multiple layers of an inorganic material. For example, the active layer ACT may be made of a semiconductor material, but is not limited thereto. As an example, the active buffer layer ABUF may be omitted according to the design.

[0078] A gate insulating film GI may be provided while covering the active layer ACT. For example, the gate insulating film GI may be formed of a single layer or multiple layers of an inorganic material. Although the gate insulating film GI is shown to be formed in the entire first pixel region PA1 and the transmissive region TA, the embodiments are not limited thereto. As an example, the gate insulating film GI may be patterned to cover the active layer ACT of the thin film transistor TFT.

[0079] The gate GATE of the thin film transistor TFT may be provided on the gate insulating film GI. In this regard, a gate material layer GM may be provided on the gate insulating film GI together with the gate GATE of the thin film transistor TFT at a position different from the formation position of the thin film transistor TFT, but is not limited thereto. For example, the gate GATE and the gate material layer GM may be formed of a single layer or multiple layers of a conductive material (e.g., a metal material).

[0080] The first interlayer insulating film ILD1 can be provided while covering the gate GATE and the gate material layer GM. As an example, the first interlayer insulating film ILD1 can be provided while covering the patterned gate insulating film GI. The metal pattern TM can be provided on the first interlayer insulating film ILD1. The metal pattern TM can be located at a position different from the formation position of the thin film transistor TFT. The second interlayer insulating film ILD2 can be provided on the first interlayer insulating film ILD1 while covering the metal pattern TM. For example, the first interlayer insulating film ILD1 and the second interlayer insulating film ILD2 can be formed of a single layer or multiple layers of an inorganic material or an organic material. For example, the metal pattern TM can be formed of a single layer or multiple layers of a conductive material (e.g., a metal material).

[0081] Two first source-drain patterns SD1 can be provided on the second interlayer insulating film ILD2. One of the two first source-drain patterns SD1 can be the source of the thin film transistor TFT, and the other of the two first source-drain patterns SD1 can be the drain of the thin film transistor TFT. For example, the first source-drain pattern SD1 can be formed of a single layer or multiple layers of a conductive material (e.g., a metal material).

[0082] The two first source-drain patterns SD1 can be electrically connected to one side and the other side of the active layer ACT via contact holes extending through the second interlayer insulating film ILD2, the first interlayer insulating film ILD1, and the gate insulating film GI.

[0083] The passivation layer PAS0 is provided while covering the two first source-drain patterns SD1. For example, the passivation layer PAS0 can be formed of a single layer or multiple layers of an inorganic material.

[0084] The planarization layer PLN can be provided on the passivation layer PAS0. The planarization layer PLN can include a first planarization layer PLN1 and a second planarization layer PLN2. For example, the first planarization layer PLN1 and the second planarization layer PLN2 can be formed of a single layer or multiple layers of an organic material. The embodiment is not limited thereto. As an example, the planarization layer PLN can include a single planarization layer or more than two planarization layers.

[0085] The first planarization layer PLN1 can be provided on the passivation layer PAS0.

[0086] The second source-drain pattern SD2 can be provided on the first planarization layer PLN1. The second source-drain pattern SD2 can be connected to one of the two first source-drain patterns SD1 via a contact hole extending through the first planarization layer PLN1. The second source-drain pattern SD2 can be a connection electrode. For example, the second source-drain pattern SD2 can be formed of a single layer or multiple layers of a conductive material (e.g., a metal material). As an example, the second source-drain pattern SD2 can be omitted according to the design.

[0087] The second planarization layer PLN2 may be provided while covering the second source-drain pattern SD2. The light-emitting element ED may be provided on the second planarization layer PLN2.

[0088] In the stacked structure of the light-emitting element ED, the anode AE may be provided on the second planarization layer PLN2. The anode AE may be electrically connected to the second source-drain pattern SD2 through a contact hole extending through the second planarization layer PLN2. For example, the anode AE may be made of a metal material, a transparent conductive oxide, or the like, or a combination thereof. As an example, in the case where the second source-drain pattern SD2 is omitted, the anode AE may be electrically connected to one of the two first source-drain patterns SD1 through a contact hole extending through the planarization layer PLN.

[0089] The bank BANK may be provided while covering a part of the anode AE. A part of the bank BANK corresponding to the light-emitting region ER of the sub-pixel SP may be removed. For example, the bank BANK may be made of an inorganic material or an organic material. As an example, the bank BANK may be made of an organic material containing a black pigment.

[0090] A part of the anode AE may be exposed through the opening of the bank BANK. The light-emitting layer EL may be located at the opening of the bank BANK and on the side surface of the bank BANK. As an example, the light-emitting layer EL may be located on a part of the side surface of the bank BANK, or may also be located on at least a part of the top surface of the bank BANK, but is not limited thereto.

[0091] At the opening of the bank BANK, the light-emitting layer EL may be in contact with the anode AE. The cathode CE may be provided on the light-emitting layer EL and the bank BANK. For example, the cathode CE may be made of a metal material, a transparent conductive oxide, or the like, or a combination thereof.

[0092] The light-emitting element ED may be formed of the anode AE, the light-emitting layer EL, and the cathode CE. The light-emitting layer EL may include at least one organic film. As an example, the light-emitting layer EL may include a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer. At least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer of the light-emitting layer EL may be a common layer provided in a plurality of sub-pixels. For example, the hole injection layer and the hole transport layer of the light-emitting layer EL may be commonly provided in a plurality of sub-pixels. For example, the electron transport layer and the electron injection layer of the light-emitting layer EL may be commonly provided in a plurality of sub-pixels. For example, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer of the light-emitting layer EL may be commonly provided in a plurality of sub-pixels.

[0093] An encapsulation layer ENC can be provided on the light-emitting element ED, which can at least reduce, minimize, or prevent external moisture or oxygen from penetrating into the light-emitting element ED.

[0094] The encapsulation layer ENC can have a single-layer structure or a multi-layer structure. For example, as Figure 3 shown, the encapsulation layer ENC can include a first passivation layer PAS1, a second encapsulation layer PCL, and a third passivation layer PAS2. For example, the first passivation layer PAS1 and the third passivation layer PAS2 can be inorganic films, and the second encapsulation layer PCL can be an organic film, but not limited thereto. Among the first passivation layer PAS1, the second encapsulation layer PCL, and the third passivation layer PAS2, the second encapsulation layer PCL can be the thickest and can be used as a planarization layer, but not limited thereto.

[0095] The first passivation layer PAS1 can be provided on the cathode CE and can be provided closest to the light-emitting element ED. For example, the first passivation layer PAS1 can be made of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3), but not limited thereto.

[0096] The second encapsulation layer PCL can be provided on the first passivation layer PAS1. For example, the second encapsulation layer PCL can be made of an organic material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbide (SiOC), but not limited thereto.

[0097] The third passivation layer PAS2 can be provided on the second encapsulation layer PCL. For example, the third passivation layer PAS2 can be made of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

[0098] As an example, a touch buffer film TBUF can be provided on the encapsulation layer ENC. As an example, a touch sensor TS can be provided on the touch buffer film TBUF. As an example, the touch buffer film TBUF and the touch sensor TS can be omitted according to the design.

[0099] Since the touch sensor TS is provided on the touch buffer film TBUF, during the manufacturing process of the touch sensor TS, penetration of chemicals, moisture, etc. into the light-emitting layer EL containing organic materials can be reduced or prevented. Therefore, the touch buffer film TBUF can reduce or prevent damage to the light-emitting layer EL vulnerable to chemicals or moisture. For example, the touch buffer film TBUF can be made of an acrylic-based, epoxy-based, or siloxane-based organic material or an inorganic material such as silicon nitride (SiNx), but not limited thereto.

[0100] The touch sensor TS may include a touch sensor metal TSM and a bridging metal BRG located in different layers. A first touch interlayer insulating film TILD1 may be disposed between the touch sensor metal TSM and the bridging metal BRG. Each of the touch sensor metal TSM and the bridging metal BRG may be formed of a single layer or multiple layers of a conductive material (e.g., a metal material).

[0101] When the touch sensor metals TSM need to be electrically connected to each other, the touch sensor metals TSM may be electrically connected to each other via the bridging metal BRG. The bridging metal BRG may be insulated from the touch sensor metal TSM by the first touch interlayer insulating film TILD1. The first touch interlayer insulating film TILD1 may be made of an inorganic material (e.g., silicon nitride (SiNx)), but is not limited thereto. When measured at room temperature, the first touch interlayer insulating film TILD1 may have a refractive index in the range of 1.9 to 1.92, but is not limited thereto. As an example, the first touch interlayer insulating film TILD1 may be made of an inorganic material different from silicon nitride (SiNx). As an example, the first touch interlayer insulating film TILD1 may be made of silicon oxide (SiOx), silicon oxynitride (SiOxNy), etc. As an example, the first touch interlayer insulating film TILD1 may have a refractive index lower than 1.9 or higher than 1.92.

[0102] A protective layer PAC may be disposed on the first touch interlayer insulating film TILD1 while covering the touch sensor TS. For example, the protective layer PAC may be made of an organic material, but is not limited thereto.

[0103] Referring to Figure 3 , the stacked structure of the transmissive area TA included in the low-resolution area LA will be described.

[0104] Referring to Figure 3 , except for the insulating material included in the first pixel area PA1, the metal material layers BSM, GATE, GM, TM, SD1, and SD2 and the semiconductor layer ACT related to the sub-pixel circuit may not be disposed in the transmissive area TA of the low-resolution area LA.

[0105] In addition, the anode AE and the cathode CE included in the light-emitting element ED may not be disposed in the transmissive area TA of the low-resolution area LA. However, the light-emitting layer EL may be disposed in the transmissive area TA of the low-resolution area LA. As an example, at least one common layer among several layers constituting the light-emitting layer EL may be disposed in the transmissive area TA of the low-resolution area LA. The embodiment is not limited thereto. As an example, the light-emitting layer EL may not be disposed in the transmissive area TA.

[0106] The transmissive region TA of the low-resolution region LA may correspond to the opening of the cathode CE. The transmissive region TA of the low-resolution region LA may overlap with the opening of the cathode CE. As an example, the transmissive region TA of the low-resolution region LA may have the same size as the opening of the cathode CE, or may have a size larger or smaller than the opening of the cathode CE.

[0107] An anti-deposition film MPL that can reduce or prevent the deposition of the cathode CE during the formation of the cathode CE may be provided in the transmissive region TA of the low-resolution region LA. As an example, the transmissive region TA of the low-resolution region LA may correspond to the anti-deposition film MPL. As an example, the transmissive region TA of the low-resolution region LA may have the same size as the anti-deposition film MPL, or may have a size larger or smaller than the anti-deposition film MPL. As an example, the anti-deposition film MPL may be more transparent than the cathode CE, but is not limited thereto. As an example, the anti-deposition film MPL may be omitted according to the design. Before depositing the cathode CE, the anti-deposition film MPL may be pre-set on only the transmissive region TA of the low-resolution region LA using a fine metal mask. The anti-deposition film MPL may be provided on the light-emitting layer EL or a common layer of the light-emitting layer EL. The anti-deposition film MPL may be formed of an organic material.

[0108] In addition, the touch sensor metal TSM and the bridging metal BRG included in the touch sensor TS may not be provided in the transmissive region TA of the low-resolution region LA. The touch sensor TS may be configured in a grid type. The touch sensor metal TSM of the touch sensor TS may be configured in a grid type.

[0109] Since a metal material layer, a semiconductor layer, an electrode material layer, etc. are not provided in the transmissive region TA of the low-resolution region LA, a high light transmittance of the transmissive region TA of the low-resolution region LA can be provided, particularly a high light transmittance of infrared light of the first wavelength (e.g., 940 nm wavelength).

[0110] Therefore, the infrared sensor (or infrared camera) 20 provided below the low-resolution region LA can receive the infrared light of the first wavelength (e.g., 940 nm wavelength) that has passed through the transmissive region TA of the low-resolution region LA of the display panel 110 to create a high-resolution image (e.g., a high-resolution face image).

[0111] A plurality of insulating films included in the first pixel region PA1 of the low-resolution region LA may also be provided in the transmissive region TA of the low-resolution region LA. As an example, the buffer layers MBUF and ABUF located between the substrates SUB1 and SUB2 and the thin-film transistor TFT, the gate insulating film GI located between the semiconductor layer ACT and the gate GATE, the interlayer insulating films ILD1 and ILD2 covering the thin-film transistor TFT, the passivation layer PAS0 and the planarization layer PLN located between the thin-film transistor TFT and the light-emitting element ED, the encapsulation layer ENC located on the light-emitting element ED, the touch buffer film TBUF located on the encapsulation layer ENC, the first touch interlayer insulating film TILD1 located on the touch buffer film TBUF, and the protective layer PAC may also be provided in the transmissive region TA of the low-resolution region LA, but are not limited thereto. As an example, at least one of the above layers may not be provided in the transmissive region TA of the low-resolution region LA.

[0112] The bank BANK included in the first pixel region PA1 of the low-resolution region LA may not be provided in the transmissive region TA of the low-resolution region LA. Therefore, in the transmissive region TA of the low-resolution region LA, the light-emitting layer EL or at least one common layer of the light-emitting layer EL may be provided on the planarization layer PLN.

[0113] For accurate face recognition, in addition to ensuring a high transmittance of infrared light with a first wavelength (e.g., 940 nm wavelength) in the transmissive region TA of the low-resolution region LA, there should be no problem when the display panel 110 is exposed to sunlight for a long time or during a UV reliability evaluation performed by assuming such a situation.

[0114] Since the cathode CE is removed from the transmissive region TA of the low-resolution region LA to ensure a high transmittance of infrared light with the first wavelength, the ultraviolet light transmittance is higher than that of other regions.

[0115] During the UV reliability evaluation, the ultraviolet light introduced through the transmissive region TA of the low-resolution region LA causes outgassing of the organic film under the cathode CE, which results in shrinkage of the pixel and color difference or brightness reduction of the display panel.

[0116] In the display device 100 according to an exemplary embodiment of the present disclosure, the bank BANK is removed from the transmissive region TA of the low-resolution region LA, thereby reducing the shrinkage of the pixel caused by outgassing of the organic film.

[0117] However, due to the lifting of the anti-deposition film MPL in the transmissive region TA of the low-resolution region LA, reliability problems still exist. Therefore, another solution is needed to reduce the ultraviolet light transmittance while increasing the infrared light transmittance in the transmissive region TA of the low-resolution region LA.

[0118] According to an exemplary embodiment of the present disclosure, a second touch interlayer insulating film TILD2 may also be provided on the first touch interlayer insulating film TILD1 in the transmissive region TA of the low-resolution region LA of the display device 100. The protective layer PAC may be provided on the second touch interlayer insulating film TILD2 while covering the touch sensor TS.

[0119] As an example, the second touch interlayer insulating film TILD2 may be made of an inorganic material (e.g., silicon nitride (SiNx)), but is not limited thereto. The second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may be made of silicon nitride (SiNx) having the same composition. The silicon-nitrogen content ratio of the second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may be the same, but is not limited thereto. The second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may have the same refractive index. For example, the second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may have a refractive index in the range of 1.9 to 1.92, but is not limited thereto. As an example, the second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may have a refractive index less than 1.9 or greater than 1.92. The thickness of the second touch interlayer insulating film TILD2 may be greater than the thickness of the first touch interlayer insulating film TILD1. The thickness of the second touch interlayer insulating film TILD2 may be, for example, in to the range of, and preferably The thickness of the first touch interlayer insulating film TILD1 may be, for example, in to the range of, and preferably The embodiment is not limited thereto. As an example, the thickness of the second touch interlayer insulating film TILD2 may be equal to or less than the thickness of the first touch interlayer insulating film TILD1. As an example, the thickness of the second touch interlayer insulating film TILD2 may be less than or may be greater than

[0120]

[0121] Alternatively, in one exemplary embodiment, the second touch interlayer insulating film TILD2 may be made of silicon nitride (SiNx) having a nitrogen content lower than that of the first touch interlayer insulating film TILD1. As an example, the second touch interlayer insulating film TILD2 may have a greater refractive index than the first touch interlayer insulating film TILD1. As an example, as long as the refractive index of the second touch interlayer insulating film TILD2 is greater than or equal to the refractive index of the first touch interlayer insulating film TILD1, the second touch interlayer insulating film TILD2 may be made of any material other than silicon nitride (SiNx). In this case, the thickness of the second touch interlayer insulating film TILD2 may be greater than, equal to, or less than the thickness of the first touch interlayer insulating film TILD1.

[0122] Thus, since the second touch interlayer insulating film TILD2 is additionally provided on the first touch interlayer insulating film TILD1, the ultraviolet light transmittance of the transmission region TA of the low-resolution region LA can be reduced.

[0123] Therefore, according to one exemplary embodiment of the present disclosure, shrinkage of pixels caused by outgassing of the organic film in the low-resolution region LA can be reduced or prevented, and lifting of the anti-deposition film MPL in the transmission region TA of the low-resolution region LA can be reduced or prevented. Although the second touch interlayer insulating film TILD2 is described or shown as being provided on the first touch interlayer insulating film TILD1, the embodiment is not limited thereto. As an example, the second touch interlayer insulating film TILD2 may be provided on any layer located above the cathode CE and below the protective layer PAC. As an example, the second touch interlayer insulating film TILD2 may be provided on the cathode CE, the encapsulation layer ENC, etc.

[0124] Figure 4 is a plan view showing a fingerprint recognition region of a display device according to one exemplary embodiment of the present disclosure. Figure 5 is along Figure 4 in the cross-sectional view taken along line V-V of

[0125] Referring to Figure 4 , a plurality of second pixel regions PA2 may be repeatedly arranged in the fingerprint recognition region FSA. Different from the low-resolution region LA, the fingerprint recognition region FSA may not include a transmission region. For convenience, a grid type touch sensor is not shown in Figure 4 .

[0126] Referring to Figure 5 , the stacked structure of the fingerprint recognition region FSA will be described.

[0127] Referring to Figure 5, the second pixel region PA2 of the fingerprint recognition region FSA may have a stacked structure similar to that of the first pixel region PA1 of the low-resolution region LA. However, different from the stacked structure of the first pixel region PA1 of the low-resolution region LA, a second touch interlayer insulating film TILD2 and a third touch interlayer insulating film TILD3 may be additionally provided on the first touch interlayer insulating film TILD1 in the fingerprint recognition region FSA. The protective layer PAC may be provided on the third touch interlayer insulating film TILD3 while covering the touch sensor TS. The stacked structure below the touch sensor TS in the fingerprint recognition region FSA may be the same as that of the first pixel region PA1 of the low-resolution region LA, but is not limited thereto.

[0128] The second touch interlayer insulating film TILD2 may be made of silicon nitride (SiNx). The second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may be made of silicon nitride (SiNx) with the same composition. The silicon-nitrogen content ratio of the second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may be the same. The second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may have the same refractive index. For example, the second touch interlayer insulating film TILD2 and the first touch interlayer insulating film TILD1 may have a refractive index in the range of 1.9 to 1.92, but is not limited thereto. The thickness of the second touch interlayer insulating film TILD2 may be greater than the thickness of the first touch interlayer insulating film TILD1, but is not limited thereto. The thickness of the second touch interlayer insulating film TILD2 may be, for example, in to range, and preferably but is not limited thereto. The thickness of the first touch interlayer insulating film TILD1 may be, for example, in to range, and preferably but is not limited thereto.

[0129] Alternatively, in an exemplary embodiment, the second touch interlayer insulating film TILD2 may be made of silicon nitride (SiNx) with a nitrogen content lower than that of the first touch interlayer insulating film TILD1. As an example, the second touch interlayer insulating film TILD2 may have a greater refractive index than the first touch interlayer insulating film TILD1.

[0130] As an example, the third touch interlayer insulating film TILD3 may be made of silicon nitride (SiNx), but is not limited thereto. As an example, the third touch interlayer insulating film TILD3 may be made of silicon nitride (SiNx) having a composition different from that of the first touch interlayer insulating film TILD1 and the second touch interlayer insulating film TILD2. The silicon-nitrogen content ratio of the third touch interlayer insulating film TILD3 may be different from the silicon-nitrogen content ratios of the first touch interlayer insulating film TILD1 and the second touch interlayer insulating film TILD2. The third touch interlayer insulating film TILD3 may be made of silicon nitride (SiNx) having a nitrogen content higher than the nitrogen contents of the first touch interlayer insulating film TILD1 and the second touch interlayer insulating film TILD2. The third touch interlayer insulating film TILD3 may have a smaller refractive index than the second touch interlayer insulating film TILD2. For example, the third touch interlayer insulating film TILD3 may have a refractive index in the range of 1.8 to 1.82, but is not limited thereto. As an example, the third touch interlayer insulating film TILD3 may have a refractive index lower than 1.8 or higher than 1.82. As an example, as long as the third touch interlayer insulating film TILD3 has a smaller refractive index than the second touch interlayer insulating film TILD2, the third touch interlayer insulating film TILD3 may be made of any material other than silicon nitride (SiNx). The thickness of the third touch interlayer insulating film TILD3 may be less than the thickness of the first touch interlayer insulating film TILD1, but is not limited thereto. The thickness of the third touch interlayer insulating film TILD3 may be, for example, in the range of to , and is preferably but is not limited thereto. As an example, the thickness of the third touch interlayer insulating film TILD3 may be less than the thickness of the second touch interlayer insulating film TILD2. As an example, the thickness of the third touch interlayer insulating film TILD3 may be less than or may be greater than As an example, the thickness of the third touch interlayer insulating film TILD3 may be equal to or greater than the thickness of the first touch interlayer insulating film TILD1.

[0131] Since the image for sensing the user's fingerprint does not require high definition like the image for face recognition, no additional transmissive area is provided in the fingerprint recognition area FSA. The embodiment is not limited thereto. As an example, an additional transmissive area may also be provided in the fingerprint recognition area FSA.

[0132] Since there is no transmissive region in the fingerprint recognition region FSA, using infrared light with a second wavelength (e.g., 1300 nm) longer than the first wavelength of the infrared light used for face recognition in the low-resolution region LA can facilitate the fingerprint sensor 30 disposed below the fingerprint recognition region FSA to recognize the user's fingerprint. The implementation is not limited thereto. As an example, the fingerprint sensor 30 may use infrared light having a wavelength equal to the first wavelength of the infrared light used for face recognition in the low-resolution region LA, or the fingerprint sensor 30 may not use infrared light.

[0133] Thus, since the third touch interlayer insulating film TILD3 having a lower refractive index is additionally disposed on the second touch interlayer insulating film TILD2, the transmittance of the infrared light with the second wavelength (e.g., 1300 nm) in the fingerprint recognition region FSA can be increased.

[0134] Therefore, according to an exemplary embodiment of the present disclosure, the recognition rate of the fingerprint sensor 30 for the user's fingerprint can be increased, and fingerprint recognition errors in the fingerprint recognition region FSA can be reduced or prevented.

[0135] Figure 6 is a plan view showing a normal region of a display device according to an exemplary embodiment of the present disclosure.

[0136] Referring to Figure 6 , the stacked structure of the normal region NA will be described. Similar to the fingerprint recognition region FSA, a plurality of third pixel regions PA3 can be repeatedly arranged in the normal region NA without a transmissive region.

[0137] Referring to Figure 6 , the third pixel region PA3 of the normal region NA may have the same stacked structure as the first pixel region PA1 of the low-resolution region LA.

[0138] Figures 7A to 7F is a cross-sectional view showing a method of manufacturing a display device according to an exemplary embodiment of the present disclosure.

[0139] Referring to Figure 7A , thin film transistors, light emitting elements, etc. are formed in the low-resolution region LA and the fingerprint recognition region FSA, and then an encapsulation layer ENC is formed.

[0140] Then, a touch buffer film TBUF is formed on the encapsulation layer ENC, and a bridging metal BRG or a touch sensor metal TSM is formed on the touch buffer film TBUF.

[0141] Then, a first touch interlayer insulating film TILD1 covering the bridging metal BRG is formed.

[0142] Referring to Figure 7B, a second touch interlayer insulating film TILD2 and a third touch interlayer insulating film TILD3 are sequentially formed on the first touch interlayer insulating film TILD1.

[0143] In both the low-resolution area LA and the fingerprint recognition area FSA, the first touch interlayer insulating film TILD1, the second touch interlayer insulating film TILD2, and the third touch interlayer insulating film TILD3 are stacked on the top surface of the encapsulation layer ENC.

[0144] Refer to Figure 7C , a photoresist PR is applied on the third touch interlayer insulating film TILD3 in the low-resolution area LA and the fingerprint recognition area FSA, and then a photolithography process is performed using a halftone mask.

[0145] The halftone mask includes areas with various light transmittances. For example, the first area R1 can be the area with the highest light transmittance, and the fourth area R4 can be the area with the lowest light transmittance. The second area R2 can have a lower light transmittance than the first area R1, but can have a higher light transmittance than the third area R3.

[0146] The first area R1 can overlap with the area where the hole for forming the exposed bridge metal BRG will be formed, the second area R2 can overlap with the area where the first touch interlayer insulating film TILD1 will be retained, the third area R3 can overlap with the area where the second touch interlayer insulating film TILD2 will be retained, and the fourth area R4 can overlap with the area where the third touch interlayer insulating film TILD3 will be retained.

[0147] Refer to Figure 7D , the photoresist PR with the first thickness t1 remains in the first pixel area PA1 of the low-resolution area LA except for some areas located on the bridge metal BRG.

[0148] In the transmission area TA of the low-resolution area LA, the photoresist PR with the first thickness t1 remains in some areas, and the photoresist PR with the second thickness t2 remains in the remaining areas. In addition, in the transmission area TA of the low-resolution area LA, the photoresist PR may not remain on the bridge metal BRG. The second thickness t2 is greater than the first thickness t1.

[0149] In the fingerprint recognition area FSA, the photoresist PR with the first thickness t1 remains in some areas, and the photoresist PR with the third thickness t3 remains in the remaining areas. In addition, in the fingerprint recognition area FSA, the photoresist PR may not remain on the bridge metal BRG. The third thickness t3 is greater than the second thickness t2.

[0150] Refer to Figure 7E, an etching process is performed using the photoresist PR in the first pixel region PA1, the transmissive region TA, and the fingerprint sensing region FSA retained in the low-resolution region LA as an etch mask.

[0151] As a result, holes HL exposing the first pixel region PA1, the transmissive region TA, and the bridge metal BRG or the touch sensor metal TSM in the fingerprint sensing region FSA are formed in the first touch interlayer insulating film TILD1. The first touch interlayer insulating film TILD1 remains in the first pixel region PA1 of the low-resolution region LA. The first touch interlayer insulating film TILD1 and the second touch interlayer insulating film TILD2 remain in the transmissive region TA of the low-resolution region LA. In addition, the first touch interlayer insulating film TILD1, the second touch interlayer insulating film TILD2, and the third touch interlayer insulating film TILD3 remain in the fingerprint sensing region FSA. Although the description and illustration are for forming the holes HL, the first touch interlayer insulating film TILD1, the second touch interlayer insulating film TILD2, and the third touch interlayer insulating film TILD3 in the same etching process using a halftone mask, the embodiment is not limited thereto. As an example, at least one of the holes HL, the first touch interlayer insulating film TILD1, the second touch interlayer insulating film TILD2, and the third touch interlayer insulating film TILD3 may be formed in a separate process, for example, without a halftone mask.

[0152] Referring to Figure 7F , a touch sensor metal TSM connected to the bridge metal BRG is formed in the holes HL, or a bridge metal BRG connected to the touch sensor metal TSM is formed in the holes HL. The touch sensor metal TSM may also be formed on the top surface of the first touch interlayer insulating film TILD1. In addition, a protective layer PAC may be provided on the first touch interlayer insulating film TILD1 to the third touch interlayer insulating film TILD3 while covering the touch sensor TS.

[0153] A display panel and a display device according to an exemplary embodiment of the present disclosure can be described as follows.

[0154] A display panel according to an exemplary embodiment of the present disclosure includes: a first region including a plurality of first pixel regions and a plurality of transmissive regions, wherein a light-emitting element is disposed in each first pixel region, and each transmissive region overlaps an opening of the cathode of the light-emitting element; a second region including a plurality of second pixel regions and having a higher pixel density than the first region; a touch sensor disposed in the first region and the second region and including touch sensor metal and bridging metal located in different layers; a first touch interlayer insulating film disposed between the touch sensor metal and the bridging metal in the first region and the second region; and a second touch interlayer insulating film disposed on the first touch interlayer insulating film in the plurality of transmissive regions of the first region and the second region.

[0155] According to an exemplary embodiment of the present disclosure, the first touch interlayer insulating film and the second touch interlayer insulating film may be made of silicon nitride.

[0156] According to an exemplary embodiment of the present disclosure, the silicon-nitrogen content ratio of the second touch interlayer insulating film may be the same as that of the first touch interlayer insulating film.

[0157] According to an exemplary embodiment of the present disclosure, the thickness of the second touch interlayer insulating film may be greater than that of the first touch interlayer insulating film.

[0158] According to an exemplary embodiment of the present disclosure, the display panel may further include a third touch interlayer insulating film disposed on the second touch interlayer insulating film in the second region.

[0159] According to an exemplary embodiment of the present disclosure, the third touch interlayer insulating film may be made of silicon nitride.

[0160] According to an exemplary embodiment of the present disclosure, the silicon-nitrogen content ratio of the third touch interlayer insulating film may be different from that of the second touch interlayer insulating film.

[0161] According to an exemplary embodiment of the present disclosure, the nitrogen content of the third touch interlayer insulating film may be greater than that of the second touch interlayer insulating film.

[0162] According to an exemplary embodiment of the present disclosure, the refractive index of the third touch interlayer insulating film may be less than that of the second touch interlayer insulating film.

[0163] According to an exemplary embodiment of the present disclosure, the thickness of the third touch interlayer insulating film may be less than that of the second touch interlayer insulating film.

[0164] A display device according to an exemplary embodiment of the present disclosure includes: a display panel including a display area and a non-display area, wherein the display area includes a first area and a second area, the first area includes a plurality of first pixel areas and a plurality of transmissive areas, the second area includes a plurality of second pixel areas and has a higher pixel density than the first area, wherein a light-emitting element is disposed in each of the first pixel areas, and wherein each of the transmissive areas overlaps an opening of the cathode of the light-emitting element; an infrared sensor overlapping the first area and located on the rear surface of the display panel; and a fingerprint sensor overlapping the second area and located on the rear surface of the display panel, and the display panel includes: a touch sensor disposed in the first area and the second area and including touch sensor metal and bridging metal located in different layers; a first touch interlayer insulating film disposed between the touch sensor metal and the bridging metal in the first area and the second area; and a second touch interlayer insulating film disposed on the first touch interlayer insulating film in the plurality of transmissive areas of the first area and the second area.

[0165] According to an exemplary embodiment of the present disclosure, the first touch interlayer insulating film and the second touch interlayer insulating film may be made of silicon nitride.

[0166] According to an exemplary embodiment of the present disclosure, the silicon-nitrogen content ratio of the second touch interlayer insulating film may be the same as that of the first touch interlayer insulating film.

[0167] According to an exemplary embodiment of the present disclosure, the thickness of the second touch interlayer insulating film may be greater than that of the first touch interlayer insulating film.

[0168] According to an exemplary embodiment of the present disclosure, the display device may further include a third touch interlayer insulating film disposed on the second touch interlayer insulating film in the second area.

[0169] According to an exemplary embodiment of the present disclosure, the third touch interlayer insulating film may be made of silicon nitride.

[0170] According to an exemplary embodiment of the present disclosure, the silicon-nitrogen content ratio of the third touch interlayer insulating film may be different from that of the second touch interlayer insulating film.

[0171] According to an exemplary embodiment of the present disclosure, the nitrogen content of the third touch interlayer insulating film may be greater than that of the second touch interlayer insulating film.

[0172] According to an exemplary embodiment of the present disclosure, the refractive index of the third touch interlayer insulating film may be less than that of the second touch interlayer insulating film.

[0173] According to an exemplary embodiment of the present disclosure, the thickness of the third touch interlayer insulating film may be less than the thickness of the second touch interlayer insulating film.

[0174] As described above, the present disclosure has been described with reference to the illustrative drawings, but the present disclosure is not limited to the embodiments and drawings disclosed in the present disclosure.

[0175] Obviously, those skilled in the art can make various modifications within the scope of the technical concept of the present disclosure.

[0176] In addition, even if the effects of the configurations of the embodiments of the present disclosure have not been explicitly described and explained when previously describing the embodiments of the present disclosure, the predictable effects of the configurations should naturally be recognized. Although the embodiments of the present disclosure have been described in more detail with reference to the drawings, the present disclosure is not necessarily limited to these embodiments and can be modified in various ways within the scope of the technical spirit of the present disclosure. Therefore, the embodiments disclosed in the present disclosure are intended to describe rather than limit the technical concept of the present disclosure, and the scope of the technical concept of the present disclosure is not limited by these embodiments. Therefore, it should be understood that the above embodiments are illustrative rather than restrictive in all respects.

[0177] Cross - reference to related applications

[0178] This application claims the priority of Korean Patent Application No. 10 - 2023 - 0181642, filed with the Korean Intellectual Property Office on December 14, 2023, which is incorporated herein by reference as if fully set forth herein.

Claims

1. A display panel, comprising: A first region, the first region comprising a plurality of first pixel regions and a plurality of transmission regions, wherein a light emitting element is disposed in each first pixel region; a second region including a plurality of second pixel regions and having no transmission region; a touch sensor disposed in the first region and the second region and including a plurality of first openings in the first region; as well as An organic layer is formed on the same layer as a cathode of the light emitting element in the first region and overlaps with the plurality of first openings.

2. The display panel according to claim 1, wherein: Each transmission region overlaps with an opening of the cathode of the light emitting element in the first region, and The organic layer is formed in the opening of the cathode of the light emitting element in the first region.

3. The display panel according to claim 1, wherein: The touch sensor is configured as a grid type, and further includes a plurality of second openings in the first area and the second area.

4. The display panel according to claim 3, wherein: Each of the plurality of second openings is positioned to correspond to a light emitting region of each sub-pixel in the first region and the second region. 5 . The display panel according to claim 1 , further comprising a thin film transistor disposed above the substrate for driving light emitting elements of sub-pixels in the first region and the second region. 6 . The display panel according to claim 5 , further comprising a first planarization layer located above the thin film transistor, and an electrode pattern disposed above the first planarization layer for electrically connecting the thin film transistor and the light emitting element.

7. The display panel according to claim 6, further comprising a second planarization layer located above the electrode pattern, in, The light emitting layer of the light emitting element is disposed on the second planarization layer in the transmission region.

8. The display panel according to claim 7, wherein: The organic layer is disposed on the light emitting layer in the transmission region.

9. The display panel according to claim 7, wherein: The light emitting layer disposed in the transmission region includes at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, and an organic light emitting layer.

10. The display panel according to claim 5, further comprising a metal layer disposed above the substrate and below the thin film transistor, in, The metal layer includes openings overlapping the plurality of first openings.

11. The display panel according to claim 1 , further comprising a bank for defining a light emitting area of ​​each sub-pixel in the first area and the second area, in, The bank includes an opening overlapping the plurality of transmission areas.

12. The display panel according to claim 11, wherein: The bank includes an organic material including a black pigment.

13. The display panel according to claim 1, further comprising: An insulating film is provided above a cathode of the light emitting element in the plurality of transmission regions of the first region and is not provided in the second region.

14. The display panel according to claim 13, in, The touch sensor includes a touch sensor metal and a bridge metal in different layers; The display panel further includes a first touch interlayer insulating film, which is arranged between the touch sensor metal and the bridge metal in the first area and the second area, and The insulating film constitutes a second touch interlayer insulating film, and the second touch interlayer insulating film is arranged on the first touch interlayer insulating film in the plurality of transmission regions of the first region.

15. The display panel according to claim 14, wherein: The first touch interlayer insulating film and the second touch interlayer insulating film are made of silicon nitride.

16. The display panel according to claim 15, wherein: A silicon-nitrogen content ratio of the second touch interlayer insulating film is the same as a silicon-nitrogen content ratio of the first touch interlayer insulating film.

17. The display panel according to claim 14, wherein: A thickness of the second touch interlayer insulating film is greater than a thickness of the first touch interlayer insulating film.

18. The display panel according to claim 14, further comprising: a third region, the third region including a plurality of third pixel regions, the second touch interlayer insulating film being further disposed on the first touch interlayer insulating film in the third region; as well as A third touch interlayer insulating film is provided on the second touch interlayer insulating film in the third region and is not provided in the first region and the second region.

19. The display panel according to claim 18, wherein: The third touch interlayer insulating film is made of silicon nitride.

20. The display panel according to claim 19, wherein: The silicon-nitrogen content ratio of the third touch interlayer insulating film is different from the silicon-nitrogen content ratio of the second touch interlayer insulating film.

21. The display panel according to claim 19, wherein: A nitrogen content of the third touch interlayer insulating film is greater than a nitrogen content of the second touch interlayer insulating film.

22. The display panel according to claim 18, wherein: A refractive index of the third touch interlayer insulating film is smaller than a refractive index of the second touch interlayer insulating film.

23. The display panel according to claim 18, wherein: A thickness of the third touch interlayer insulating film is smaller than a thickness of the second touch interlayer insulating film.

24. The display panel according to claim 18, wherein: The transmission area is not provided in the third area.

25. The display panel according to claim 18, wherein: The hole in the first touch interlayer insulating film exposing the bridge metal or the touch sensor metal, the second touch interlayer insulating film, and the third touch interlayer insulating film are formed in the same etching process by using a half-tone mask.

26. A display device, comprising: A display panel according to any one of claims 2 to 25. 27 . The display device according to claim 26 , further comprising an infrared sensor overlapping the first area and located on a rear surface of the display panel.

28. A display device, comprising: The display panel according to any one of claims 18 to 25; as well as A fingerprint sensor overlaps the third area and is located on a rear surface of the display panel. 29 . The display device according to claim 28 , further comprising an infrared sensor overlapping the first area and located on a rear surface of the display panel.

30. The display device according to claim 29, wherein: The fingerprint sensor uses infrared light of a second wavelength, which is longer than a first wavelength of infrared light used by the infrared sensor.