Data acquisition method and device of OLED device, equipment and medium

Abstract

The invention discloses a data acquisition method and device of an OLED device, equipment and a medium. The method comprises the following steps: according to the structure of a target OLED device, determining one-dimensional equal-interval grid model parameters and a plurality of initial adjustment parameters of the OLED device; calculating potential distribution, electron concentration distribution and hole concentration distribution under a plurality of different external voltages according to the one-dimensional equal-interval grid model parameters, each initial adjustment parameter and a pre-established calculation model; and determining a carrier distribution curve and current density under each external voltage according to the potential distribution, the electron concentration distribution and the hole concentration distribution under each external voltage. By adopting the above technical scheme, the rapid calculation of the parameters of the organic light emitting diode can be realized, the data acquisition of the phosphorescence doped OLED can be realized, and the effective support can be provided for the optimization of the OLED.

Description

Technical Field

[0001] The present invention relates to the field of electronic information technology, and in particular, to a method, device, equipment and medium for obtaining data of an OLED device. Background Art

[0002] Organic light-emitting diodes (OLEDs) are widely used in the fields of full-color display and solid-state lighting due to their flexibility, self-luminescence, full-color emission, low driving voltage, fast response time, low production cost, etc. In order to improve the performance of OLEDs, technicians need a comprehensive understanding of the different components that form the OLED device and the physical processes that control the operation of the device. Therefore, it is necessary to obtain the key data of OLEDs under different conditions in a reliable and fast manner.

[0003] In the prior art, when obtaining the key data of an OLED device during the physical process of operation, time characteristics are often considered when establishing a calculation model, and the operation process is relatively complex, time-consuming, and has a large amount of calculation, requiring high performance of the device for performing the operation. Summary of the Invention

[0004] The present invention provides a method, device, equipment and medium for obtaining data of an OLED device, which can realize the rapid calculation of organic light-emitting diode parameters, realize the data acquisition of phosphorescent-doped OLEDs, and thus can provide effective support for the optimization of OLEDs.

[0005] According to one aspect of the present invention, there is provided a method for obtaining data of an OLED device, including:

[0006] Determining one-dimensional equally spaced grid model parameters and a plurality of initial adjustment parameters of the OLED device according to the structure of the target OLED device;

[0007] Calculating the potential distribution, electron concentration distribution and hole concentration distribution under a plurality of different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter and a pre-established calculation model;

[0008] Determining the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution and hole concentration distribution under each applied voltage.

[0009] According to another aspect of the present invention, there is provided a device for obtaining data of an OLED device, including:

[0010] A parameter determination module, configured to determine one-dimensional equally spaced grid model parameters and a plurality of initial adjustment parameters of the OLED device according to the structure of the target OLED device;

[0011] A distribution calculation module, configured to calculate the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and a pre-established calculation model;

[0012] A current data acquisition module, configured to determine the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage.

[0013] According to another aspect of the present invention, there is provided an electronic device, which includes:

[0014] At least one processor; and

[0015] A memory communicatively connected to the at least one processor; wherein,

[0016] The memory stores a computer program executable by the at least one processor, and when the computer program is executed by the at least one processor, the at least one processor can execute the data acquisition method of the OLED device according to any embodiment of the present invention.

[0017] According to another aspect of the present invention, there is provided a computer-readable storage medium storing computer instructions for causing a processor to implement the data acquisition method of the OLED device according to any embodiment of the present invention when executed.

[0018] The technical solution of the embodiment of the present invention can quickly calculate the parameters of the organic light-emitting diode by determining the one-dimensional equally spaced grid model parameters and multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device, calculating the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and a pre-established calculation model, and determining the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage. During the calculation process, the time characteristics are not considered, the operation process is relatively simple, time-consuming is short, the calculation amount is small, it is applicable to various computing devices, realizes the data acquisition of the phosphorescent doped OLED, and can thus provide effective support for the optimization of the OLED.

[0019] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understandable through the following description. Description of the Drawings

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0021] Figure 1 It is a flowchart of a data acquisition method for an OLED device according to Embodiment 1 of the present invention;

[0022] Figure 2 It is a schematic structural diagram of an OLED according to an embodiment of the present invention;

[0023] Figure 3 It is a schematic diagram of a one-dimensional equally spaced grid model according to an embodiment of the present invention;

[0024] Figure 4 It is a flowchart of another data acquisition method for an OLED device according to Embodiment 2 of the present invention;

[0025] Figure 5 It is a schematic structural diagram of a data acquisition device for an OLED device according to Embodiment 3 of the present invention;

[0026] Figure 6 It is a schematic structural diagram of an electronic device for implementing the data acquisition method of the OLED device in the embodiments of the present invention. Detailed implementation manners

[0027] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0028] It should be noted that the terms "first", "second", etc. in the specification, claims and above-mentioned drawings of the present invention are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that such data used can be interchanged under appropriate circumstances, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0029] Embodiment 1

[0030] Figure 1 FIG. is a flowchart of a method for obtaining data of an OLED device provided in Embodiment 1 of the present invention. This embodiment is applicable to the situation of obtaining key data during the physical process of an OLED doped with a phosphorescent dopant. This method can be executed by a data acquisition device of the OLED device. The data acquisition device of the OLED device can be implemented in the form of hardware and / or software, and is generally configured in a computer or processor with data processing functions. As Figure 1 shown, the method includes:

[0031] S110. Determine one-dimensional equally spaced grid model parameters and a plurality of initial adjustment parameters of the OLED device according to the structure of the target OLED device.

[0032] Optionally, Figure 2 FIG. is a schematic structural diagram of an optional OLED. As Figure 2 shown, the device structure sequentially includes an ITO glass substrate, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. HAT-CN is the hole injection layer. NPB and TCTA within the leftmost dashed box together form the hole transport layer of the OLED device. TPBi is the electron transport layer. The dashed box between the hole transport layer and the electron transport layer is the light-emitting layer. Ir(ppy)2(acac) is the phosphorescent guest of the light-emitting layer. The light-emitting layer also includes a light-emitting layer host, and the host can be any one of single host TCTA, single host CBP, and dual host TCTA:TPBi. Figure 2 Three kinds of hosts are schematically shown herein, but in fact, the light-emitting layer only includes one of the hosts and the doped phosphorescent guest. Liq is the electron injection layer, and the cathode is metal aluminum.

[0033] Optionally, after determining the structure of the target OLED device, the width of the OLED device can be determined. The width of the OLED device is the sum of the widths of the hole transport layer, the light-emitting layer, and the electron transport layer. And according to the width of the OLED device, the parameters of the one-dimensional equally spaced grid model are determined. Among them, the parameters of the one-dimensional equally spaced grid model include the width of the one-dimensional equally spaced grid model and the interface division result. The interface division result includes the number of interfaces and the number of grids.

[0034] Figure 3 It is a schematic diagram of an optional one-dimensional equally spaced grid model. As Figure 3 shown, L is the width of the one-dimensional equally spaced model. After determining the preset grid width, it can be equally divided into multiple grids according to the width of the one-dimensional equally spaced model. 0, 1, 2, ……, m + 1 are the respective interfaces, and the intervals between the interfaces are used as grids. 1, 2, ……, m are the center points of the respective grids.

[0035] Among them, the multiple initial adjustment parameters of the OLED device include the built-in potential, electron mobility, hole mobility, anode injection barrier, and cathode injection barrier.

[0036] Optionally, the initial adjustment parameter can refer to a parameter that is given an initial value but will be adjusted with each update of the model later.

[0037] Optionally, for the OLED device, for different light-emitting layer hosts, their corresponding initial adjustment parameters are different.

[0038] S120. According to the parameters of the one-dimensional equally spaced grid model, each initial adjustment parameter, and the pre-established calculation model, calculate the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages.

[0039] Optionally, in the calculation model proposed by the present invention, the time characteristics are not considered. By using the central difference approximation of the second derivative, the Poisson equation is discretized in a direct manner to solve the potential distribution. And the analytical method for solving partial differential equations is used to solve the electron and hole densities, and then the first-order central difference is performed to directly discretize the continuity equation to solve the electron concentration distribution and the hole concentration distribution. The entire calculation result process does not include the time variable, effectively reducing the computational amount of the calculation model.

[0040] Optionally, the potential distribution, electron concentration distribution, and hole concentration distribution can refer to the potential, electron concentration, and hole concentration at each interface in the one-dimensional equally spaced grid model.

[0041] Optionally, in order to obtain data of the OLED device during the entire working process, it is necessary to obtain the potential distribution, electron concentration distribution, and hole concentration distribution respectively under different applied voltages to provide sufficient data for subsequent analysis.

[0042] Optionally, in the calculation model for calculating the potential distribution, the electron concentration distribution and the hole concentration distribution are required. In the first calculation, that is, when the applied voltage is 0V, the electron concentration distribution and the hole concentration distribution are selected as preset values. After obtaining the potential distribution of the first calculation, according to the potential distribution of the first calculation, calculate the electron concentration distribution and the hole concentration distribution under this applied voltage, and use the obtained electron concentration distribution and hole concentration distribution in the next potential distribution calculation. That is, the calculation of the potential distribution and the calculation of the electron concentration distribution and the hole concentration distribution are mutually coupled processes.

[0043] Optionally, the increase value of the applied voltage for each calculation can be preset. The applied voltage for the first calculation is 0V, and the upper limit of the applied voltage is determined according to the performance of the OLED device. For example, it can be set to 5V. For each calculation, on the basis of the applied voltage of the previous calculation, increase the preset increase value of the applied voltage. For example, when the increase value of the applied voltage is 0.2V, the applied voltages for each calculation are 0V, 0.2V, 0.4V, …, 5V.

[0044] S130. Determine the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage.

[0045] Optionally, by applying different applied voltages, the potential distribution under different applied voltages can be obtained. Then, according to the potential distribution, the carrier distribution curve under different applied voltages can be obtained. According to the electron concentration distribution and potential distribution obtained under each applied voltage, the electron current density can be obtained. According to the hole concentration distribution and potential distribution obtained under each applied voltage, the hole current density can be obtained. By adding the electron current density and the hole current density, the current density of the device under different voltages can be obtained.

[0046] In the technical solution of the embodiment of the present invention, by determining the one-dimensional equally spaced grid model parameters and multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device, and calculating the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and the pre-established calculation model, and determining the carrier distribution curve and current density under each applied voltage, the rapid calculation of the parameters of the organic light-emitting diode can be realized. During the calculation process, the time characteristics are not considered, the operation process is relatively simple, the time consumption is short, the calculation amount is small, it is applicable to various operation devices, the data acquisition of the phosphorescent doped OLED is realized, and thus effective support can be provided for the optimization of the OLED.

[0047] Embodiment 2

[0048] Figure 4 It is a flowchart of a data acquisition method for an OLED device provided by Embodiment 2 of the present invention. Based on the above embodiment, this embodiment specifically illustrates the calculation method of the calculation model for the potential distribution, electron concentration distribution, and hole concentration distribution under different applied voltages. As Figure 4 shown, the method includes:

[0049] S210. Determine the width of the target OLED device according to the structure of the target OLED device.

[0050] S220. Establish a one-dimensional equally spaced grid model of the target OLED device according to the width of the target OLED device and the pre-set grid width, and determine the interface division result of the one-dimensional equally spaced grid model.

[0051] S230. Determine multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device.

[0052] S240. Calculate the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and the pre-established calculation model.

[0053] Among them, calculating the potential distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and the pre-established calculation model may include:

[0054] Determine the second boundary potential according to the target applied voltage, built-in potential, and the pre-set first boundary potential, and determine the dimensionless quantities of the potential at the first interface and the second interface under the target applied voltage according to the first boundary potential and the second boundary potential;

[0055] Calculate the dimensionless potential at each interface under the target applied voltage according to the dimensionless potential at the first interface and the second interface, the interface division result, and the calculation model under the target applied voltage;

[0056] Determine the potential at each interface under the target applied voltage according to the first boundary potential, the second boundary potential, the dimensionless potential at each interface under the target applied voltage, and the thermal voltage.

[0057] Optionally, determining the second boundary potential according to the target applied voltage, the built-in potential, and the preset first boundary potential, and determining the dimensionless potential at the first interface and the second interface under the target applied voltage according to the first boundary potential and the second boundary potential may include:

[0058] According to the formula ψ(m + 1) - ψ(0) + V a = V bi , determine the first boundary potential ψ(0) and the second boundary potential ψ(m + 1); where V a is the target applied voltage, V bi is the built-in potential, and the first boundary potential is a preset value;

[0059] According to the formula ψ' i = ψ i / V t , determine the dimensionless potential at the first interface and the second interface under the target applied voltage, and V t is the thermal voltage.

[0060] Optionally, when the target applied voltage changes, the first boundary potential and the second boundary potential change with the change of the target applied voltage.

[0061] Optionally, calculating the dimensionless potential at each interface under the target applied voltage according to the dimensionless potential at the first interface and the second interface under the target applied voltage, the interface division result, and the calculation model may include:

[0062] Calculate the dimensionless potential at each interface under the target applied voltage according to the following formula:

[0063]

[0064]

[0065] where ε r,i (i = 0, 1, ……, m + 1) is the dimensionless permittivity at the i-th interface, ε r,i = ε i / ε0, ε i is the permittivity of the i-th interface, and ε0 is the permittivity of free space, ψ'i (i = 1, 2, ……, m) is the dimensionless quantity of the electric potential at the i-th interface, ψ'0 is the dimensionless quantity of the electric potential at the first interface under the target applied voltage, ψ' m+1 is the dimensionless quantity of the electric potential at the second interface under the target applied voltage, q is the elementary charge, N is a calculation parameter, N has the same order of magnitude as the density of states value of the charge carriers, δx is the grid width, V t is the thermal voltage, n i (i = 1, 2, ……, m) is the electron concentration at the i-th interface, p i (i = 1, 2, ……, m) is the hole concentration at the i-th interface;

[0066] According to the first boundary potential, the second boundary potential, the dimensionless quantities of the electric potentials at each interface under the target applied voltage, and the formula ψ' i = ψ i / V t , determine the electric potential ψ i (i = 0, 1, ……, m + 1) at each interface under the target applied voltage.

[0067] Optionally, the dielectric constant of the i-th interface, the dielectric constant of free space, the elementary charge, the density of states value of the charge carriers, the grid width, and the thermal voltage are all known quantities. When the target applied voltage is 0V, the electron concentration and the hole concentration at the i-th interface are preset values. When the target applied voltage is not 0V, the electron concentration and the hole concentration at the i-th interface are the electron concentration and the hole concentration at the i-th interface obtained when calculating with the previous applied voltage.

[0068] Among them, according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and the pre-established calculation model, calculating the electron concentration distribution under multiple different applied voltages may include:

[0069] Determine the first intermediate variable at each interface according to the dimensionless quantity of the electric potential at each interface under the target applied voltage and the electron mobility;

[0070] Respectively determine the first boundary electron concentration and the second boundary electron concentration according to the bandgap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the density of states value of the charge carriers, and the thermal voltage, and respectively determine the dimensionless quantities of the electron concentrations at the first interface and the second interface under the target applied voltage according to the first boundary electron concentration and the second boundary electron concentration;

[0071] Calculate the dimensionless quantities of the electron concentrations at each interface under the target applied voltage according to the first intermediate variable, the dimensionless quantities of the electron concentrations at the first interface and the second interface, the interface division result, and the calculation model;

[0072] Determine the electron concentration at each interface under the target applied voltage according to the first boundary electron concentration, the second boundary electron concentration, the dimensionless quantity of the electron concentration at each interface under the target applied voltage, and the density of states value of the charge carriers.

[0073] Optionally, determine the first intermediate variable at each interface according to the dimensionless quantity of the electric potential at each interface under the target applied voltage and the electron mobility, including:

[0074] According to the formula β i = μ n,i B(δψ' i ) and respectively determine the first intermediate variable β i and where i = 0, 1, ……, m + 1, μ n,i is the electron mobility at the i-th interface, B is the Bernoulli function, B(x) = x / (e x - 1), and δψ' i is the derivative of the dimensionless quantity of the electric potential at the i-th interface.

[0075] Optionally, determine the first boundary electron concentration and the second boundary electron concentration respectively according to the band gap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the density of states value of the charge carriers, and the thermal voltage, and determine the dimensionless quantities of the electron concentration at the first interface and the second interface under the target applied voltage according to the first boundary electron concentration and the second boundary electron concentration, including:

[0076] According to the formula determine the first boundary electron concentration n(0) and the second boundary electron concentration n(m + 1); where E g is the band gap of the light-emitting layer, is the anode injection barrier, is the cathode injection barrier, and N is the density of states value of the charge carriers;

[0077] According to the formula n' i = n i / N, determine the dimensionless quantities of the electron concentration at the first interface and the second interface.

[0078] Optionally, calculate the dimensionless quantity of the electron concentration at each interface under the target applied voltage according to the first intermediate variable, the dimensionless quantities of the electron concentration at the first interface and the second interface, the interface division result, and the calculation model, including:

[0079] Calculate the dimensionless quantity of the electron concentration at each interface under the target applied voltage according to the following formula:

[0080]

[0081] wherein, n' i (i = 1, 2, ……, m) is the dimensionless quantity of the electron concentration at the i-th interface, n'0 is the dimensionless quantity of the electron concentration at the first interface under the target applied voltage, n' m+1 is the dimensionless quantity of the electron concentration at the second interface under the target applied voltage, R n,i (i = 1, 2, ……, m) is the electron recombination rate at the i-th interface, N is a calculation parameter, N has the same order of magnitude as the density of states of charge carriers, δx is the grid width, V t is the thermal voltage.

[0082] Wherein, according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and a pre-established calculation model, calculating the hole concentration distribution under multiple different applied voltages may include:

[0083] Determining a second intermediate variable at each interface according to the dimensionless quantity of the electric potential at each interface and the hole mobility under the target applied voltage;

[0084] Respectively determining a first boundary hole concentration and a second boundary hole concentration according to the band gap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the density of states value of charge carriers, and the thermal voltage, and respectively determining the dimensionless quantity of the hole concentration at the first interface and the second interface under the target applied voltage according to the first boundary hole concentration and the second boundary hole concentration;

[0085] Calculating the dimensionless quantity of the hole concentration at each interface under the target applied voltage according to the second intermediate variable, the dimensionless quantity of the hole concentration at the first interface and the second interface, the interface division result, and the calculation model;

[0086] Determining the hole concentration at each interface under the target applied voltage according to the first boundary hole concentration, the second boundary hole concentration, the dimensionless quantity of the hole concentration at each interface under the target applied voltage, and the density of states value of charge carriers.

[0087] Optionally, determining the second intermediate variable at each interface according to the dimensionless quantity of the electric potential at each interface and the hole mobility under the target applied voltage includes:

[0088] According to the formula γ i = μ p,i B(δψ' i ) and respectively determining the second intermediate variable γ i and wherein, i = 0, 1, ……, m + 1, μ n,iis the hole mobility at the i-th interface, B is the Bernoulli function, B(x) = x / (e x -1), and δψ' i is the derivative of the dimensionless quantity of the electric potential at the i-th interface.

[0089] Optionally, according to the band gap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the density of states value of charge carriers, and the thermal voltage, the first boundary hole concentration and the second boundary hole concentration are determined respectively, and according to the first boundary hole concentration and the second boundary hole concentration, the dimensionless quantities of the hole concentrations at the first interface and the second interface under the target applied voltage are determined respectively, including:

[0090] According to the formula determine the first boundary hole concentration p(0) and the second boundary hole concentration p(m + 1); where E g is the band gap of the light-emitting layer, is the anode injection barrier, is the cathode injection barrier, and N is the density of states value of charge carriers;

[0091] According to the formula p' i = p i / N, determine the dimensionless quantities of the hole concentrations at the first interface and the second interface.

[0092] Optionally, according to the second intermediate variable, the dimensionless quantities of the hole concentrations at the first interface and the second interface, the interface division result, and the calculation model, calculate the dimensionless quantities of the hole concentrations at each interface under the target applied voltage, including:

[0093] According to the following formula, calculate the dimensionless quantities of the hole concentrations at each interface under the target applied voltage:

[0094]

[0095] where p' i (i = 1, 2, ……, m) is the dimensionless quantity of the hole concentration at the i-th interface, p'0 is the dimensionless quantity of the hole concentration at the first interface under the target applied voltage, p' m+1 is the dimensionless quantity of the hole concentration at the second interface under the target applied voltage, R p,i (i = 1, 2, ……, m) is the hole recombination rate at the i-th interface, N is a calculation parameter, N has the same order of magnitude as the density of states of charge carriers, δx is the grid width, and V t is the thermal voltage.

[0096] Optionally, in the above calculation formula, the meanings of the same letters are the same, and no redundant introduction is made.

[0097] S250. Generate a carrier distribution curve under the target applied voltage according to the potential distribution under the target applied voltage.

[0098] S260. According to the potential distribution, electron concentration distribution, and hole concentration distribution under the target applied voltage, respectively determine the dimensionless quantity of the potential, the dimensionless quantity of the electron concentration, and the dimensionless quantity of the hole concentration at each interface under the target applied voltage.

[0099] S270. According to the dimensionless quantity of the potential, the dimensionless quantity of the electron concentration, and the dimensionless quantity of the hole concentration at each interface, respectively determine the electron current density and the hole current density in each grid of the one-dimensional equally spaced grid model.

[0100] Optionally, the electron current density and the hole current density in each grid can be calculated according to the following formula:

[0101]

[0102] where is the electron current density in the i-th grid, is the hole current density in the i-th grid.

[0103] S280. According to the electron current density and the hole current density in each grid, determine the current density in each grid under the target applied voltage.

[0104] S290. According to the carrier distribution curve under the target applied voltage and the current density in each grid under the target applied voltage, perform feedback adjustment on each initial adjustment parameter, and use the adjusted adjustment parameter when obtaining OLED device data next time.

[0105] The technical solution of the embodiment of the present invention can quickly calculate the parameters of the organic light-emitting diode by determining the one-dimensional equally spaced grid model parameters and multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device, calculating the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and the pre-established calculation model, and determining the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage. During the calculation process, the time characteristics are not considered, the operation process is relatively simple, the time consumption is short, the calculation amount is small, it is applicable to various computing devices, realizes the data acquisition of the phosphorescent doped OLED, and can thus provide effective support for the optimization of the OLED.

[0106] Embodiment III

[0107] Figure 5The figure is a schematic structural diagram of a data acquisition device for an OLED device provided in Embodiment 3 of the present invention. As Figure 5 shown, the device includes: a parameter determination module 310, a distribution calculation module 320, and a current data acquisition module 330.

[0108] The parameter determination module 310 is configured to determine one-dimensional equally spaced grid model parameters and multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device.

[0109] The distribution calculation module 320 is configured to calculate the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and a pre-established calculation model.

[0110] The current data acquisition module 330 is configured to determine the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage.

[0111] The technical solution of the embodiment of the present invention can realize the rapid calculation of the parameters of the organic light-emitting diode by determining the one-dimensional equally spaced grid model parameters and multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device, calculating the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter, and a pre-established calculation model, and determining the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage. During the calculation process, the time characteristics are not considered, the operation process is relatively simple, the time consumption is short, the calculation amount is small, it is applicable to various operation devices, realizes the data acquisition of the phosphorescent doped OLED, and can thus provide effective support for the optimization of the OLED.

[0112] Based on the above embodiments, the parameter determination module 310 is specifically configured to:

[0113] Determine the width of the target OLED device according to the structure of the target OLED device;

[0114] Establish a one-dimensional equally spaced grid model of the target OLED device according to the width of the target OLED device and a pre-set grid width, and determine the interface division result of the one-dimensional equally spaced grid model.

[0115] Based on the above embodiments, the multiple initial adjustment parameters of the OLED device include built-in potential, electron mobility, hole mobility, anode injection barrier, and cathode injection barrier.

[0116] Based on the above embodiments, the distribution calculation module 320 includes an electric potential distribution calculation unit, an electron concentration distribution calculation unit, and a hole concentration calculation unit;

[0117] The electric potential distribution calculation unit is specifically configured to:

[0118] Determine the second boundary electric potential according to the target applied voltage, the built-in electric potential, and a preset first boundary electric potential, and respectively determine the dimensionless quantities of the electric potential at the first interface and the second interface under the target applied voltage according to the first boundary electric potential and the second boundary electric potential;

[0119] Calculate the dimensionless quantities of the electric potential at each interface under the target applied voltage according to the dimensionless quantities of the electric potential at the first interface and the second interface under the target applied voltage, the interface division result, and the calculation model;

[0120] Determine the electric potential at each interface under the target applied voltage according to the first boundary electric potential, the second boundary electric potential, the dimensionless quantities of the electric potential at each interface under the target applied voltage, and the thermal voltage.

[0121] Based on the above embodiments, the electron concentration distribution calculation unit is specifically configured to:

[0122] Determine the first intermediate variable at each interface according to the dimensionless quantity of the electric potential at each interface under the target applied voltage and the electron mobility;

[0123] Respectively determine the first boundary electron concentration and the second boundary electron concentration according to the band gap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the density of states value of charge carriers, and the thermal voltage, and respectively determine the dimensionless quantities of the electron concentration at the first interface and the second interface under the target applied voltage according to the first boundary electron concentration and the second boundary electron concentration;

[0124] Calculate the dimensionless quantities of the electron concentration at each interface under the target applied voltage according to the first intermediate variable, the dimensionless quantities of the electron concentration at the first interface and the second interface, the interface division result, and the calculation model;

[0125] Determine the electron concentration at each interface under the target applied voltage according to the first boundary electron concentration, the second boundary electron concentration, the dimensionless quantities of the electron concentration at each interface under the target applied voltage, and the density of states value of charge carriers.

[0126] Based on the above embodiments, the hole concentration calculation unit is specifically configured to:

[0127] Determine the first boundary hole concentration and the second boundary hole concentration respectively according to the bandgap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the density of states value of charge carriers, and the thermal voltage, and determine the dimensionless quantities of the hole concentration at the first interface and the second interface under the target applied voltage according to the first boundary hole concentration and the second boundary hole concentration;

[0128] Calculate the dimensionless quantities of the hole concentration at each interface under the target applied voltage according to the second intermediate variable, the dimensionless quantities of the hole concentration at the first interface and the second interface, the interface division result, and the calculation model;

[0129] Determine the hole concentration at each interface under the target applied voltage according to the first boundary hole concentration, the second boundary hole concentration, the dimensionless quantities of the hole concentration at each interface under the target applied voltage, and the density of states value of charge carriers.

[0130] On the basis of the above embodiments, the current data acquisition module 330 is specifically used for:

[0131] Generate a carrier distribution curve under the target applied voltage according to the potential distribution under the target applied voltage;

[0132] Determine the dimensionless quantities of the potential, the electron concentration, and the hole concentration at each interface under the target applied voltage according to the potential distribution, the electron concentration distribution, and the hole concentration distribution under the target applied voltage respectively;

[0133] Determine the electron current density and the hole current density in each grid of the one-dimensional equally spaced grid model according to the dimensionless quantities of the potential, the electron concentration, and the hole concentration at each interface respectively;

[0134] Determine the current density in each grid under the target applied voltage according to the electron current density and the hole current density in each grid.

[0135] On the basis of the above embodiments, an adjustment parameter update module may further be included for:

[0136] Perform feedback adjustment on each initial adjustment parameter according to the carrier distribution curve under the target applied voltage and the current density in each grid under the target applied voltage, and use the adjusted adjustment parameters when acquiring OLED device data next time.

[0137] The OLED device data acquisition device provided by the embodiments of the present invention can execute the OLED device data acquisition method provided by any embodiment of the present invention, and has corresponding functional modules and beneficial effects for executing the method.

[0138] Embodiment 4

[0139] Figure 6 FIG. 2 shows a schematic structural diagram of an electronic device 10 that can be used to implement an embodiment of the present invention. The electronic device is intended to represent various forms of digital computers, such as, laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processors, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described herein and / or claimed.

[0140] As Figure 6 shown, the electronic device 10 includes at least one processor 11, and a memory communicatively connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc. The memory stores a computer program executable by the at least one processor. The processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 into the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0141] A plurality of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a magnetic disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0142] The processor 11 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the processor 11 include but are not limited to a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, such as the data acquisition method of the OLED device as described in the embodiments of the present invention. That is:

[0143] Determine the one-dimensional equally-spaced grid model parameters and multiple initial adjustment parameters of the OLED device according to the structure of the target OLED device;

[0144] Calculate the potential distribution, electron concentration distribution, and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally-spaced grid model parameters, each initial adjustment parameter, and the pre-established calculation model;

[0145] Determine the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution, and hole concentration distribution under each applied voltage.

[0146] In some embodiments, the data acquisition method of the OLED device can be implemented as a computer program, which is tangibly included in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed onto the electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by the processor 11, one or more steps of the data acquisition method of the OLED device described above can be executed. Alternatively, in other embodiments, the processor 11 can be configured to execute the data acquisition method of the OLED device by any other suitable means (e.g., by means of firmware).

[0147] The various embodiments of the systems and techniques described above in this document can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SOCs), complex programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a dedicated or general-purpose programmable processor, and can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit the data and instructions to the storage system, the at least one input device, and the at least one output device.

[0148] A computer program for implementing the method of the present invention can be written in any combination of one or more programming languages. These computer programs can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowchart and / or block diagram to be implemented. The computer programs can be executed entirely on the machine, partially on the machine, as a stand-alone software package partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0149] In the context of the present invention, a computer-readable storage medium can be a tangible medium that can contain or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer-readable storage medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, the computer-readable storage medium can be a machine-readable signal medium. More specific examples of the machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0150] In order to provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the electronic device. Other kinds of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and the input received from the user can be in any form (including acoustic input, voice input, or tactile input).

[0151] The systems and techniques described herein can be implemented in a computing system including backend components (e.g., as a data server), or a computing system including middleware components (e.g., an application server), or a computing system including frontend components (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described herein), or a computing system including any combination of such backend components, middleware components, or frontend components. The components of the system can be interconnected with each other by digital data communication in any form or medium (e.g., a communication network). Examples of communication networks include: local area network (LAN), wide area network (WAN), blockchain network, and the Internet.

[0152] A computing system can include a client and a server. The client and the server are generally remote from each other and typically interact through a communication network. The client-server relationship is created by computer programs running on respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or a cloud host, which is a host product in the cloud computing service system and solves the defects of difficult management and weak business scalability existing in traditional physical hosts and VPS services.

[0153] It should be understood that various forms of the processes shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and this is not limited herein.

[0154] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for acquiring data of an organic light emitting diode (OLED) device, characterized in that: include: According to the structure of the target OLED device, determining the one-dimensional equidistant grid model parameters and a plurality of initial adjustment parameters of the OLED device; Calculating the potential distribution, electron concentration distribution and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter and a pre-established calculation model; According to the potential distribution, electron concentration distribution and hole concentration distribution under each applied voltage, the carrier distribution curve and the current density under each applied voltage are determined.

2. The method according to claim 1, characterized in that According to the structure of the target OLED device, determine the one-dimensional equidistant grid model parameters, including: Determining the width of the target OLED device according to the structure of the target OLED device; According to the width of the target OLED device and the preset grid width, a one-dimensional equidistant grid model of the target OLED device is established, and an interface division result of the one-dimensional equidistant grid model is determined; The multiple initial adjustment parameters of the OLED device include built-in potential, electron mobility, hole mobility, anode injection barrier and cathode injection barrier.

3. The method according to claim 2, characterized in that According to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter and a pre-established calculation model, the potential distribution under multiple different applied voltages is calculated, including: Determine the second boundary potential according to the target applied voltage, the built-in potential and the preset first boundary potential, and determine the dimensionless quantities of the potentials at the first interface and the second interface under the target applied voltage according to the first boundary potential and the second boundary potential respectively; Calculate the dimensionless quantity of the potential at each interface under the target applied voltage according to the dimensionless quantity of the potential at the first interface and the second interface under the target applied voltage, the interface division result and the calculation model; The potential at each interface under the target applied voltage is determined according to the first boundary potential, the second boundary potential, the dimensionless quantity of the potential at each interface under the target applied voltage, and the thermal voltage.

4. The method according to claim 3, characterized in that According to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter and a pre-established calculation model, the electron concentration distribution under a plurality of different applied voltages is calculated, including: Determining a first intermediate variable at each interface according to a dimensionless quantity of an electric potential at each interface under a target applied voltage and an electron mobility; Determine the first boundary electron concentration and the second boundary electron concentration according to the band gap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the state density value of the charge carrier and the thermal voltage, and determine the dimensionless amount of the electron concentration at the first interface and the second interface under the target applied voltage according to the first boundary electron concentration and the second boundary electron concentration; Calculate the dimensionless amount of the electron concentration at each interface under the target applied voltage according to the first intermediate variable, the dimensionless amount of the electron concentration at the first interface and the second interface, the interface division result and the calculation model; The electron concentration at each interface under the target applied voltage is determined based on the first boundary electron concentration, the second boundary electron concentration, the dimensionless quantity of the electron concentration at each interface under the target applied voltage, and the state density value of the charge carrier.

5. The method according to claim 3, characterized in that: According to the one-dimensional equally spaced grid model parameters, each initial adjustment parameter and a pre-established calculation model, hole concentration distributions under multiple different applied voltages are calculated, including: Determining a second intermediate variable at each interface according to a dimensionless quantity of an electric potential at each interface under a target applied voltage and a hole mobility; Determine the first boundary hole concentration and the second boundary hole concentration according to the band gap of the light-emitting layer, the anode injection barrier, the cathode injection barrier, the state density value of the charge carriers and the thermal voltage, and determine the dimensionless quantity of the hole concentration at the first interface and the second interface under the target applied voltage according to the first boundary hole concentration and the second boundary hole concentration; Calculate the dimensionless amount of hole concentration at each interface under the target applied voltage according to the second intermediate variable, the dimensionless amount of hole concentration at the first interface and the second interface, the interface division result and the calculation model; The hole concentration at each interface under the target applied voltage is determined based on the first boundary hole concentration, the second boundary hole concentration, the dimensionless quantity of the hole concentration at each interface under the target applied voltage, and the state density value of the charge carrier.

6. The method according to claim 1, characterized in that According to the potential distribution, electron concentration distribution and hole concentration distribution under each applied voltage, the carrier distribution curve and current density under each applied voltage are determined, including: generating a carrier distribution curve under the target applied voltage according to the potential distribution under the target applied voltage; According to the potential distribution, electron concentration distribution and hole concentration distribution under the target applied voltage, the dimensionless quantity of the potential, the dimensionless quantity of the electron concentration and the dimensionless quantity of the hole concentration at each interface under the target applied voltage are determined respectively; According to the dimensionless quantity of the electric potential at each interface, the dimensionless quantity of the electron concentration and the dimensionless quantity of the hole concentration, the electron current density and the hole current density in each grid in the one-dimensional equally spaced grid model are determined respectively; The current density in each grid under the target applied voltage is determined according to the electron current density and the hole current density in each grid.

7. The method according to claim 6, characterized in that After determining the carrier distribution curve and current density at each applied voltage according to the potential distribution, electron concentration distribution and hole concentration distribution at each applied voltage, the method further includes: According to the carrier distribution curve under the target applied voltage and the current density in each grid under the target applied voltage, each initial adjustment parameter is feedback-adjusted, and the adjusted adjustment parameters are used when the OLED device data is acquired next time.

8. A data acquisition device for an OLED device, characterized in that: include: A parameter determination module, used to determine the one-dimensional equidistant grid model parameters and a plurality of initial adjustment parameters of the OLED device according to the structure of the target OLED device; A distribution calculation module, used to calculate the potential distribution, electron concentration distribution and hole concentration distribution under multiple different applied voltages according to the one-dimensional equally spaced grid model parameters, various initial adjustment parameters and a pre-established calculation model; The current data acquisition module is used to determine the carrier distribution curve and current density under each applied voltage according to the potential distribution, electron concentration distribution and hole concentration distribution under each applied voltage.

9. An electronic device, characterized in that: The electronic device comprises: at least one processor; and a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can perform the data acquisition method for the OLED device according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the data acquisition method for an OLED device according to any one of claims 1 to 7 when the processor executes the computer instructions.

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