1Bit adjustable phase dual-unit common control metasurface structure

Abstract

The invention discloses a 1Bit phase-adjustable dual-unit co-control metasurface structure, which comprises a first dielectric plate, a second dielectric plate and a third dielectric plate which are sequentially arranged from top to bottom, wherein the top surface of the first dielectric plate is provided with a metal patch group serving as a resonant element, and a first circuit used for regulating and controlling phase delay of incident electromagnetic waves through a PIN diode is arranged between the first dielectric plate and the second dielectric plate; a reflecting metal patch for realizing total reflection on incident electromagnetic waves is arranged between the second dielectric plate and the third dielectric plate; a second circuit is arranged on the bottom of the third dielectric plate; therefore, the metal patch group, the first metal column, the second metal column and the reflective metal patch are utilized to form an equivalent LC circuit, and a local resonance effect is generated to realize phase regulation and control of incident electromagnetic waves. According to the invention, the complexity of the metasurface system is greatly reduced, the overall energy efficiency ratio is improved, and meanwhile, the method has obvious advantages in the aspect of reducing the system cost.

Description

Technical Field

[0001] The present invention relates to the technical field of microwave and antenna, and particularly to a 1Bit tunable phase dual-element co-controlled metasurface structure. Background Art

[0002] In the existing metasurface unit structure, often a PIN is used to control the on-off of a metal patch for the circuit, and then the beam is regulated.

[0003] In the existing metasurface unit design, each PIN diode is usually only used to control the on-off of a single metal patch to achieve specific phase modulation or electromagnetic characteristic regulation. Although this traditional design is intuitive, it has certain limitations. For example, each PIN diode can only regulate one patch, resulting in limited regulation ability per unit area, and more PIN diodes are required to achieve complex electromagnetic modulation. At the same time, since each metal patch requires an independent PIN diode control, the control circuit of the entire metasurface array is relatively complex. Especially in large-scale metasurface applications, a large number of PIN diodes and driving lines will significantly increase the circuit complexity and power consumption. Moreover, in the case of high-density integration, the traditional unit design may face problems such as difficult wiring and limited arrangement of PIN diodes, affecting the design flexibility and scalability of the metasurface.

[0004] For example, in Figure 1 the shown metasurface reflection unit, each PIN controls the on-off of a metal patch for the circuit; that is, PIN1 controls the on-off of p1, PIN2 controls the on-off of p2, PIN3 controls the on-off of p3, and PIN4 controls the on-off of p4. When the states of the four PINs are [ON, OFF, ON, OFF] in sequence, the entire metasurface reflection unit is in state1; when the states of the four PINs are [OFF, ON, OFF, ON] in sequence, the entire metasurface reflection unit is in state1. The phase delays of the incident electromagnetic waves for the two states are as Figure 2 shown, and it can be seen that there is a 180-degree phase difference between the two states.

[0005] Although this scheme has a phase gradient that meets the requirements, each of its units requires four PINs to control, with a complex circuit, difficult manufacturing, and high cost. Summary of the Invention

[0006] The object of the present invention is to provide a 1Bit tunable phase dual-element co-controlled metasurface structure to overcome the problems of complex circuit, difficult manufacturing, and high cost existing in the prior art.

[0007] To achieve the above task, the present invention adopts the following technical solutions:

[0008] A 1Bit tunable phase dual - unit co - controlled metasurface structure includes: a first dielectric plate, a second dielectric plate, and a third dielectric plate arranged in sequence from top to bottom; where:

[0009] On the top surface of the first dielectric plate, a metal patch group is arranged as a resonant element. Between the first dielectric plate and the second dielectric plate, a first circuit is arranged for regulating the phase delay of the incident electromagnetic wave through PIN diodes. Between the second dielectric plate and the third dielectric plate, a reflective metal patch is arranged for total reflection of the incident electromagnetic wave; on the bottom surface of the third dielectric plate, a second circuit is arranged.

[0010] The first circuit has a first circular metal sheet and a second circular metal sheet; the second circuit has a third circular metal sheet.

[0011] The second circular metal sheet in the first circuit and the reflective metal patch are electrically connected by a first metal post passing through the second dielectric plate; the first circular metal sheet in the first circuit and the third circular metal sheet in the second circuit are connected by a second metal post passing through the second dielectric plate and the third dielectric plate. Thus, an equivalent LC circuit is formed by the metal patch group, the first metal post, the second metal post, and the reflective metal patch, generating a local resonance effect to achieve phase regulation of the incident electromagnetic wave.

[0012] Further, the first dielectric plate, the second dielectric plate, and the third dielectric plate have the same length and width dimensions but different thicknesses; there are through - holes on the second dielectric plate and the third dielectric plate for cooperation with the first metal post and the second metal post.

[0013] Further, the metal patch group includes two square metal patches with the same size; by forming an equivalent LC circuit to interact with the incident electromagnetic wave, a local resonance effect is generated to achieve phase regulation of the electromagnetic wave.

[0014] Further, the first circuit includes two parts. The first part is a rectangular ring - shaped circuit. The first circular metal sheet is set at the mid - point on the left side of the ring - shaped circuit; the second circular metal sheet is set at the center of the ring - shaped circuit, and the second circular metal sheet is connected to the mid - point on the right side of the ring - shaped circuit through a PIN diode.

[0015] The second part is two L - shaped bifurcated circuits arranged symmetrically up and down and connected at the ends. The connection point of the bifurcated circuits is connected to the mid - point on the right side of the ring - shaped circuit through a metal sheet; the endpoints of the two bifurcated circuits are respectively directly below the right sides of the two square metal patches included in the metal patch group.

[0016] Further, the reflective metal patch is located between the second dielectric plate and the third dielectric plate, with the same size as the second dielectric plate. It is used for total reflection of the incident electromagnetic wave and also has an electromagnetic shielding function; there are through - holes in the reflective metal patch so that the second metal post can penetrate it.

[0017] Furthermore, the second circuit is located on the bottom surface of the third dielectric substrate. The second circuit includes a DC line, a fan-shaped stub, and the third circular metal sheet. The third circular metal sheet is disposed at the end of the DC line, and the tip of the fan-shaped stub is connected to the side surface of the DC line. The structure of the second circuit together forms an LC resonance circuit.

[0018] Furthermore, the PIN diode controls the connection and disconnection of the metal patch group to the first circuit in the metasurface structure. When the metasurface structure is irradiated by high-frequency electromagnetic waves, the PIN diode can be equivalent to an LC circuit. When the PIN diode is turned on, the equivalent impedance is relatively low, and the metasurface structure is in state zero, that is, the phase delay of the incident electromagnetic wave in the working frequency band is 0°. When the PIN diode is turned off, the equivalent impedance is relatively high, the current is blocked at the position of the PIN diode, the equivalent resonance frequency is reduced, and the metasurface structure is in state one, that is, the phase delay of the incident electromagnetic wave in the working frequency band is 180°. There is a 180° phase difference in the phase delay of the incident electromagnetic wave between the two states.

[0019] A metasurface reflection array is composed of the 1Bit tunable phase dual-cell co-controlled metasurface structure.

[0020] Compared with the prior art, the present invention has the following technical features:

[0021] 1. By using a single PIN diode to control two metal patches simultaneously, the complexity of the metasurface system is greatly reduced. In the traditional metasurface unit, one PIN is used to control one patch, which leads to a large number of PIN diodes and corresponding drive circuits in the system, increasing the circuit design difficulty and wiring complexity. The present invention innovatively reduces the number of PIN diodes by 50%, making the drive circuit more concise, reducing the control signal channels, and making the overall system architecture more refined. This not only optimizes the signal routing, reduces the wiring density and complexity, but also improves the system's integratability and stability. At the same time, due to the reduction of components, the interference between signals is effectively suppressed, further improving the working reliability of the system and providing a more convenient design scheme for the engineering application of metasurfaces.

[0022] 2. In terms of energy efficiency, the present invention significantly reduces the power consumption of the overall system by reducing the usage of PIN diodes by half. In the traditional design, each PIN diode consumes a certain bias current in the conducting state. As the scale of the metasurface expands, the cumulative power consumption will have a greater impact on the energy consumption of the system. The present invention reduces the number of PIN diodes, correspondingly reducing the demand for bias current, thereby effectively reducing the energy consumption of the entire system. This optimization not only improves the power utilization rate but also reduces the heat accumulation during system operation, enhances the heat dissipation efficiency, further strengthens the stability and long-term working ability of the device. The low-power consumption characteristic makes this design more suitable for intelligent metasurface systems that require long-term stable operation, improving the overall energy efficiency ratio.

[0023] 3. The present invention also has significant advantages in reducing system costs. Due to the reduced number of required PIN diodes, the corresponding procurement costs of electronic components, the design costs of drive circuits, and the manufacturing costs are effectively controlled. In addition, the reduced circuit components mean lower processing and assembly difficulties, reduce the process requirements during production, and improve the production yield of products. At the same time, the simplification of the system also reduces the failure rate during long-term operation, thereby reducing the equipment maintenance cost and increasing the service life of the product. This optimization not only reduces the manufacturing cost of a single metasurface unit but also makes large-scale production and deployment more economical and efficient, providing a more feasible commercialization path for the wide application of metasurface technology. Description of the Drawings

[0024] Figure 1 is an example diagram of an existing metasurface reflection unit;

[0025] Figure 2 is a schematic diagram of the phase delay of an existing metasurface reflection unit for incident electromagnetic waves;

[0026] Figure 3 is the 1Bit tunable phase dual-unit co-controlled metasurface structure proposed by the present invention;

[0027] Figure 4 is an application schematic diagram in an embodiment of the present invention;

[0028] Figure 5 is a schematic diagram of the phase delay of two states in the embodiment of the present invention near the operating frequency. Detailed Embodiments

[0029] The present invention proposes an innovative 1Bit tunable phase dual-cell co-controlled metasurface structure, where a single PIN diode can simultaneously control the on-off states of two metal patches, thus breaking through the limitations of traditional designs; the core idea of this solution is to introduce a special circuit topology within a single cell, enabling a PIN diode to simultaneously affect the states of two adjacent metal patches.

[0030] See Figure 3 , an innovative 1Bit tunable phase dual-cell co-controlled metasurface structure provided by the present invention includes: a first dielectric plate 32, a second dielectric plate 34, and a third dielectric plate 36 arranged in sequence from top to bottom; wherein:

[0031] A metal patch group 31 serving as a resonant element is disposed on the top surface of the first dielectric plate 32. A first circuit 33 for regulating the phase delay of incident electromagnetic waves through a PIN diode 40 is disposed between the first dielectric plate 32 and the second dielectric plate 34. A reflective metal patch 35 for achieving total reflection of incident electromagnetic waves is disposed between the second dielectric plate 34 and the third dielectric plate 36. A second circuit 37 is disposed on the bottom surface of the third dielectric plate 36;

[0032] The first circuit 33 has a first circular metal sheet 38 and a second circular metal sheet 39; the second circuit 37 has a third circular metal sheet 43;

[0033] The second circular metal sheet 39 in the first circuit 33 and the reflective metal patch 35 are electrically connected by a first metal post 42 passing through the second dielectric plate 34. The first circular metal sheet 38 in the first circuit 33 and the third circular metal sheet 43 in the second circuit 37 are connected by a second metal post 41 passing through the second dielectric plate 34 and the third dielectric plate 36. Thus, an equivalent LC circuit is formed by the metal patch group 31, the first metal post 42, the second metal post 41, and the reflective metal patch 35 to generate a local resonance effect for phase regulation of incident electromagnetic waves.

[0034] As a further illustration of the above technical solution, in an embodiment of the present invention:

[0035] The first dielectric plate 32, the second dielectric plate 34, and the third dielectric plate 36 have the same length and width dimensions but different thicknesses; their function is to provide mechanical support for the entire metasurface structure to ensure its stability, and at the same time, the equivalent dielectric constants of their respective parts can regulate the resonance frequency of the metasurface structure and the reflection phase delay of incident electromagnetic waves; there are through holes in the second dielectric plate 34 and the third dielectric plate 36, enabling the first metal post 42 and the second metal post 41 to penetrate them.

[0036] The described metal patch group 31 includes two square metal patches of the same size. As the main resonant element in the design, it interacts with the incident electromagnetic wave. By forming an equivalent LC circuit with the first metal post 42, the second metal post 41, and the reflective metal patch 35, it generates a local resonance effect to achieve phase control of the electromagnetic wave. Its size determines its resonant frequency. The larger the size, the smaller the resonant frequency.

[0037] The first circuit 33 includes two parts. The first part is a rectangular ring circuit. A first circular metal sheet 38 is set at the midpoint of the left side of the ring circuit. A second circular metal sheet 39 is set at the center of the ring circuit. The second circular metal sheet 39 is connected to the midpoint of the right side of the ring circuit through a PIN diode 40. The second part is two L-shaped bifurcated circuits arranged symmetrically up and down and connected at the ends. The connection point of the bifurcated circuits is connected to the midpoint of the right side of the ring circuit through a metal sheet. The endpoints of the two bifurcated circuits are respectively directly below the right sides of the two square metal patches included in the metal patch group 31. The first circuit 33 connects the metal patch group 31 as the resonant element, the first metal post 42, and the reflective metal patch 35. The current generated by the incident electromagnetic wave can flow through it. At the same time, the PIN diode 40 is connected to the first circuit 33, which is convenient for controlling its on-off to regulate the phase delay of the incident electromagnetic wave.

[0038] The reflective metal patch 35 is located between the second dielectric plate 34 and the third dielectric plate 36, and has the same size as the second dielectric plate 34. As a perfect electric conductor reflecting surface, it can achieve total reflection of the incident electromagnetic wave, and at the same time provide a certain degree of electromagnetic shielding to prevent the incident electromagnetic wave from interfering with the equipment behind. At the same time, it has through holes, so that the second metal post 41 can penetrate it.

[0039] The second circuit 37 is located on the bottom surface of the third dielectric plate 36. The second circuit 37 includes a DC line 45, a fan-shaped stub 44, and the third circular metal sheet 43. Among them, the third circular metal sheet 43 is set at the end of the DC line 45, and the tip of the fan-shaped stub 44 is connected to the side of the DC line 45. The structure of the second circuit 37 together forms an LC resonant circuit to regulate the phase of the incident electromagnetic wave.

[0040] The second metal post 41 penetrates the second dielectric plate 34 and the third dielectric plate 36. Its top surface is flush with the top surface of the second dielectric plate 34, and its bottom surface is flush with the bottom surface of the third dielectric plate 36. It connects the first circular metal sheet 38 in the first circuit 33 and the third circular metal sheet 43 in the second circuit 37. There is also a first metal post 42 that penetrates the second dielectric plate 34. Its top surface is flush with the top surface of the second dielectric plate 34, and its bottom surface is flush with the bottom surface of the second dielectric plate 34. It connects the second circular metal sheet 39 in the first circuit 33 and the reflective metal patch 35.

[0041] The PIN diode 40 controls the connection and disconnection of the metal patch group 31 to the first circuit 33 in the metasurface structure. When the metasurface structure is irradiated by high-frequency electromagnetic waves, the PIN diode 40 can be equivalent to an LC circuit, and its equivalent impedance Z is:

[0042]

[0043] where ω is the angular frequency, C is the capacitance, L is the inductance, and j is the imaginary unit.

[0044] When the PIN diode 40 is turned on, it can be equivalent to a small inductor, and the equivalent impedance Z is relatively low. The current in the metal patch group 31 can flow smoothly, and the equivalent resonance frequency is relatively high. The metasurface structure is in state zero, that is, the phase delay of the incident electromagnetic wave in the working frequency band is 0°. When the PIN diode 40 is turned off, it can be equivalent to a large capacitor, and the equivalent impedance Z is relatively high. The current is blocked at the position of the PIN diode 40, forming an electric field jump, and the equivalent resonance frequency is reduced. The metasurface structure is in state one, that is, the phase delay of the incident electromagnetic wave in the working frequency band is 180°. There is a 180° phase difference in the phase delay of the incident electromagnetic wave between the two states.

[0045] Therefore, this metasurface structure can be used to form a metasurface reflection array, and the beam control of the array can be realized by controlling the connection and disconnection of the PIN diode 40 on each metasurface structure.

[0046] Embodiment:

[0047] As Figure 4 shown, in an embodiment of the present invention, two Figure 3 shown metasurface structures are placed side by side to form an approximately square structure; the structure of this example at least includes: a first dielectric plate 2, a second dielectric plate 4, and a third dielectric plate 6 from top to bottom in sequence.

[0048] A square metal patch group 1, which is located on the upper surface of the first dielectric plate 2 and is composed of four square metal patches patch1 - patch4 with the same size. The four metal patches are evenly distributed to form a square, and the center of the square coincides with the center of the upper surface of the first dielectric plate 2.

[0049] A metal post group 8, which is composed of 116 small metal posts, penetrates the first dielectric plate 2 and the second dielectric plate 4, and the material is copper. These small metal posts are evenly distributed to form a square, and the center of the square coincides with the center of the first dielectric plate 2.

[0050] A first circuit 3, which contains two PIN diodes 9, and the circuit can be controlled by controlling the connection and disconnection of the PIN diodes 9. In this example, PIN1 controls the first group of patch1 and patch3, and PIN2 controls patch2 and patch4.

[0051] The first circuit 3 consists of two identical parts, each of which is as Figure 4 shown, containing a rectangular ring circuit 13. There is a first circular metal patch 14 at the midpoint of the left side of the ring circuit 13. There is a second circular metal patch 15 at the center of the ring circuit 13, and this patch is connected to the midpoint of the right side of the ring circuit 13 through the PIN diode 9. Two L-shaped bifurcated circuits 16 extend from the midpoint of the right side of the ring circuit 13, and their endpoints are correspondingly set directly below the right sides of the four square metal patches.

[0052] The large metal column 11, which consists of 2 metal columns of the same size, penetrates through the second dielectric plate 4 and the third dielectric plate 6. The material is copper, and the center of the top surface of the metal column coincides with the center of the circle of the first circular metal patch 14.

[0053] The small metal column 10, which consists of 2 metal columns of the same size, penetrates through the second dielectric layer 4. The material is copper, and the center of the top surface of the metal column coincides with the center of the circle of the second circular metal patch 15.

[0054] The single metal column 18, which penetrates through the third dielectric layer 6. The material is copper, and the center of the top end coincides with the midpoint of the upper side of the square metal patch 17.

[0055] The reflective metal patch 5 is located between the second dielectric plate 4 and the third dielectric plate 6 and is square. A square metal patch 17 extends from the midpoint of the side of the reflective metal patch 5.

[0056] The second circuit 7 includes a DC line 20, a fan-shaped stub 12, and a third circular metal sheet 19, and its center coincides with the center of the bottom surface of the first metal column group 11.

[0057] When the incident electromagnetic wave irradiates the metasurface reflecting element shown in the example, the electric field first induces surface currents on the metal patches patch1 - patch4, and excites local electromagnetic resonances in the resonant structure composed of the PIN diode 9 and the surrounding first circuit 3, second circuit 7, reflective metal patch 5, metal column group 8, small metal column 10, and large metal column 11. At this time, the on - off state of the PIN diode 9 determines the equivalent impedance characteristics of the metasurface structure: when the PIN diode 9 is turned on (low impedance), the current on the reflective metal patch 5 can flow smoothly, the equivalent resonant frequency is relatively high, and the reflection phase is close to 0°; when the PIN diode 9 is turned off (high impedance), the current is blocked at the position of the PIN diode 9, forming an electric field jump, the equivalent resonant frequency decreases, resulting in a 180° flip of the reflection phase.

[0058] Performing simulation of irradiating the structure in the example with incident electromagnetic waves, the results are as Figure 5 shown:

[0059] If both PIN diodes 9 (PIN1 and PIN2) in the first circuit 3 are turned on, the circuit is turned on, denoted as state zero (state0). At this time, in the operating frequency band, the phase delay of the incident electromagnetic wave by the metasurface structure is 0 deg.

[0060] If both PIN diodes 9 in the first circuit 3 are turned off, the circuit is turned off, denoted as state one (state1); at this time, in the operating frequency band, the phase delay of the incident electromagnetic wave by the metasurface structure is 0 deg.

[0061] As Figure 5 shown, in the operating frequency band, the reflection attenuation of the incident electromagnetic wave by the metasurface structure of the present invention is less than 1 dB.

[0062] In summary, turning on and off the two PINs simultaneously are the two 1Bit states (phase) of the metasurface structure of the present invention:

[0063]

[0064] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A 1-bit adjustable phase dual-unit co-controlled metasurface structure, characterized in that: include: A first dielectric plate (32), a second dielectric plate (34) and a third dielectric plate (36) are arranged in sequence from top to bottom; wherein: A metal patch group (31) serving as a resonant element is arranged on the top surface of the first dielectric plate (32); a first circuit (33) for regulating the phase delay of an incident electromagnetic wave through a PIN diode (40) is arranged between the first dielectric plate (32) and the second dielectric plate (34); a reflective metal patch (35) for achieving total reflection of the incident electromagnetic wave is arranged between the second dielectric plate (34) and the third dielectric plate (36); and a second circuit (37) is arranged on the bottom surface of the third dielectric plate (36); The first circuit (33) comprises a first circular metal sheet (38) and a second circular metal sheet (39); the second circuit (37) comprises a third circular metal sheet (43); A first metal column (42) penetrating the second dielectric plate (34) is used to electrically connect the second circular metal sheet (39) and the reflective metal patch (35) in the first circuit (33); a second metal column (41) penetrating the second dielectric plate (34) and the third dielectric plate (36) is used to connect the first circular metal sheet (38) in the first circuit (33) and the third circular metal sheet (43) in the second circuit (37), so that the metal patch group (31), the first metal column (42), the second metal column (41) and the reflective metal patch (35) form an equivalent LC circuit, generating a local resonance effect to achieve phase regulation of an incident electromagnetic wave.

2. The 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to claim 1 is characterized in that: The first dielectric plate (32), the second dielectric plate (34) and the third dielectric plate (36) have the same length and width, but different thicknesses; the second dielectric plate (34) and the third dielectric plate (36) have through holes for cooperating with the first metal column (42) and the second metal column (41).

3. The 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to claim 1 is characterized in that: The metal patch group (31) comprises two square metal patches of the same size; an equivalent LC circuit is formed to interact with the incident electromagnetic wave, thereby generating a local resonance effect to achieve phase regulation of the electromagnetic wave.

4. The 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to claim 1 is characterized in that: The first circuit (33) comprises two parts, the first part is a rectangular ring circuit, a first circular metal sheet (38) is arranged at the left midpoint of the ring circuit; a second circular metal sheet (39) is arranged at the center of the ring circuit, and the second circular metal sheet (39) is connected to the right midpoint of the ring circuit via a PIN diode (40); The second part is two L-shaped bifurcated circuits that are symmetrically arranged up and down and connected at the ends. The connection of the bifurcated circuits is connected to the right midpoint of the ring circuit through a metal sheet; the endpoints of the two bifurcated circuits are respectively located directly below the right sides of the two square metal patches included in the metal patch group (31).

5. The 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to claim 1 is characterized in that: The reflective metal patch (35) is located between the second dielectric plate (34) and the third dielectric plate (36) and has the same size as the second dielectric plate (34). It is used for total reflection of incident electromagnetic waves and has an electromagnetic shielding function. The reflective metal patch (35) has a through hole so that the second metal column (41) can pass through it.

6. The 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to claim 1 is characterized in that: The second circuit (37) is located on the bottom surface of the third dielectric plate (36), and comprises a DC line (45), a fan-shaped branch (44), and the third circular metal sheet (43); wherein the third circular metal sheet (43) is arranged at the end of the DC line (45), and the tip of the fan-shaped branch (44) is connected to the side of the DC line (45), and the structure of the second circuit (37) together forms an LC resonant circuit.

7. The 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to claim 1, characterized in that: The PIN diode (40) controls the on / off of the metal patch group (31) in the metasurface structure to the first circuit (33); when the metasurface structure is irradiated with a high-frequency electromagnetic wave, the PIN diode (40) can be equivalent to an LC circuit; when the PIN diode 40 is turned on, the equivalent impedance is low, and the metasurface structure is in state zero, that is, the phase delay of the incident electromagnetic wave in the working frequency band is 0°; when the PIN diode (40) is turned off, the equivalent impedance is high, the current is blocked at the position of the PIN diode (40), the equivalent resonant frequency is reduced, and the metasurface structure is in state one, that is, the phase delay of the incident electromagnetic wave in the working frequency band is 180°, and there is a phase difference of 180° between the phase delays of the incident electromagnetic wave in the two states.

8. A metasurface reflective array, characterized in that: The array is constructed using the 1-bit phase-adjustable dual-unit co-controlled metasurface structure according to any one of claims 1-7.

9. An aircraft equipped with the metasurface reflective array according to claim 8.

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