Reconfigurable three-dimensional heterogeneous integrated general radio frequency front-end frequency conversion microsystem

Abstract

The invention discloses a reconfigurable three-dimensional heterogeneous integrated general radio frequency front-end frequency conversion microsystem which comprises a system-in-package, the system-in-package comprises a plurality of dielectric plates which are stacked and sealed in a wafer-level bonding mode, and metal wiring layers used for achieving signal plane interconnection grow on the upper surfaces and the lower surfaces of the dielectric plates. The dielectric plate is provided with dielectric through holes used for signal vertical interconnection. A plurality of microcavities are arranged in the system-in-package, a plurality of functional units of the frequency conversion circuit are respectively buried in the plurality of microcavities in a heterogeneous manner, and the functional units are in signal interconnection with the metal wiring layer in a gold wire bonding manner; the upper end of the system-in-package is connected with an inductor of a frequency conversion circuit, and the lower end of the system-in-package is connected with an external interface in a ball grid array form. The problems that a traditional frequency conversion module is low in integration level, large in size and weight, poor in universality, difficult in bandwidth and center frequency reconstruction and the like can be solved, meanwhile, various circuit topological structures can be compatible, and the product development and application cost is effectively reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio frequency and microwave, and particularly relates to a reconfigurable three-dimensional heterogeneous integrated general radio frequency front-end frequency conversion microsystem. Background Art

[0002] As the core functional unit of modern radio frequency signal processing, the frequency conversion module plays an important role in wireless communication systems, the Internet of Things and terminal devices, aerospace and deep space exploration, etc. It undertakes key functions such as spectrum shifting, frequency conversion, and channel adaptation, and its performance directly determines the overall performance of the system.

[0003] Traditional frequency conversion modules are realized based on the integration of discrete device-based board-level radio frequency circuits or the method of bare chips plus micro-assembly. It is difficult to further optimize in terms of volume and integration, power consumption, reliability, cost, intelligence level, and manufacturing efficiency. These disadvantages of traditional frequency conversion modules severely limit their applications in fields such as 6G communication, autonomous driving, satellite Internet, smart wearables, and bioelectronics. Summary of the Invention

[0004] In order to overcome the defects of the prior art, the present invention provides a reconfigurable three-dimensional heterogeneous integrated general radio frequency front-end frequency conversion microsystem, which can solve problems such as low integration level, large volume and weight, poor versatility, and difficulty in reconfiguring bandwidth and center frequency of traditional frequency conversion modules.

[0005] The object of the present invention is achieved by the following technical solutions:

[0006] A reconfigurable three-dimensional heterogeneous integrated general radio frequency front-end frequency conversion microsystem, which includes a system-level package. The system-level package includes a plurality of dielectric plates that are stacked and sealed through wafer-level bonding. Metal wiring layers for realizing signal plane interconnection are grown on both the upper surface and the lower surface of the dielectric plates, and dielectric vias for signal vertical interconnection are provided on the dielectric plates;

[0007] A plurality of microcavities are provided inside the system-level package, and a plurality of functional units of the frequency conversion circuit are respectively buried in the microcavities in a heterogeneous manner. The functional units are signal interconnected with the metal wiring layer through wire bonding;

[0008] An inductor of the frequency conversion circuit is connected to the upper end of the system-level package, and an external interface in the form of a ball grid array is connected to the lower end of the system-level package.

[0009] Furthermore, the system-level package is configured to complete signal reception, channel selection, frequency conversion, filtering, amplification, and controllable attenuation of the radio frequency front-end frequency conversion microsystem.

[0010] Further, the functional unit includes several chips; two chips in the same microcavity are wire-bonded to achieve signal interconnection between the two chips in the same microcavity; two chips in different microcavities are wire-bonded to a metal wiring layer, the metal wiring layer interconnects the signal planes, and the dielectric vias vertically interconnect the signals to achieve signal interconnection between the two chips in different microcavities.

[0011] Further, the dielectric plate is a silicon plate or a glass plate; and / or the metal wiring layer is one of a gold layer, a copper layer, a silver layer, a tungsten layer, and a molybdenum layer; and / or the dielectric via is a silicon via or a glass via.

[0012] Further, the thickness of the dielectric plate is 100 um to 1000 um; and / or the thickness of the metal wiring layer is 1 um to 15 um.

[0013] Further, the height of the microcavity matches the maximum height of the functional unit; if the maximum height of the functional unit is less than the height of a dielectric plate, the height of the microcavity is twice the height of the dielectric plate; if the maximum height of the functional unit is not less than the height of a dielectric plate, the height of the microcavity is at least three times the height of the dielectric plate.

[0014] Further, a first welding portion for welding an inductor, a second welding portion for welding a capacitor, and a third welding portion for welding a resistor are provided at the upper end of the system-level package.

[0015] Further, the functional unit includes a preamplifier, and the inductor is located on the top of the preamplifier and close to the microcavity for isomerically burying the preamplifier.

[0016] Further, the external interface includes a radio frequency input interface, a radio frequency output interface, a first local oscillator signal interface, and a second local oscillator signal interface.

[0017] Further, the planar transmission structure on the metal wiring layer, the vertical transmission structure on the dielectric via, the radio frequency input interface, the radio frequency output interface, the first local oscillator signal interface, and the second local oscillator signal interface are all broadband transmission structures.

[0018] The beneficial effects of the present invention are as follows:

[0019] The present invention supports multiple frequency conversion circuit topologies to overcome the difficulties of high development cost and long R & D cycle caused by the need to redesign the package for each circuit structure;

[0020] Through the design of preset microcavities, the present invention can achieve reconfigurability of the intermediate frequency and bandwidth, thereby greatly expanding the application scope of the product;

[0021] The present invention can set a quasi-coaxial vertical interconnection structure in the microcavity for isomerically burying the second intermediate frequency filter and connect it to the bottom BGA, which can not only achieve the internal burial of the filter, but also support an external filter, further improving the versatility of the product.

[0022] The present invention adopts a microsystem architecture design, which can realize the full-automatic and batch production and assembly of the frequency conversion module. At the same time, manual debugging can be avoided, and the cost and production cycle of the product can be greatly reduced.

[0023] Compared with the traditional frequency conversion module with the same function, the present invention can reduce the volume and weight by dozens of times, and can double the integration density, which is beneficial to expanding the application in miniaturized and light-weight scenarios.

[0024] The present invention adopts an integrated design, which can avoid the use of components such as RF cables, connectors and structural parts required by the traditional frequency conversion module. While saving costs, it shortens the transmission path of signals in the RF front-end frequency conversion microsystem and reduces the system power consumption of the RF front-end frequency conversion microsystem. Brief Description of the Drawings

[0025] The present invention will be described in more detail below based on embodiments and with reference to the drawings. Among them:

[0026] Figure 1 Shows a schematic structural diagram of an embodiment of the present invention;

[0027] Figure 2 Shows the layout diagram of the external interfaces in the present invention;

[0028] Figure 3 Shows the circuit principle block diagram of the present invention;

[0029] In the drawings, the same components are denoted by the same reference numerals. The drawings are not drawn to actual scale.

[0030] Reference Numerals:

[0031] 1. First high-resistance silicon plate; 2. Second high-resistance silicon plate; 3. Third high-resistance silicon plate; 4. Fourth high-resistance silicon plate; 5. Fifth high-resistance silicon plate; 6. Dielectric through-hole; 7. First gold wiring layer; 8. Second gold wiring layer; 9. Third gold wiring layer; 10. Fourth gold wiring layer; 11. Fifth gold wiring layer; 12. Sixth gold wiring layer; 13. Seventh gold wiring layer; 14. Eighth gold wiring layer; 15. Ninth gold wiring layer; 16. Tenth gold wiring layer; 17. External interface; 18. Inductor. Detailed Description of the Embodiments

[0032] The present invention will be further described below with reference to the drawings.

[0033] The present invention provides a reconfigurable three-dimensional heterogeneous integrated general RF front-end frequency conversion microsystem, as Figures 1-3As shown in the figure, it includes a system-in-package (SiP), which is configured to perform functions such as signal reception, channel selection, frequency conversion, filtering, amplification, and controllable attenuation of a radio frequency front-end frequency conversion microsystem;

[0034] The system-in-package includes three to six dielectric plates stacked and sealed by means of wafer-level bonding. Metal wiring layers for realizing signal plane interconnection are grown on both the upper and lower surfaces of the dielectric plates, and dielectric vias 6 for signal vertical interconnection are provided on the dielectric plates;

[0035] A number of microcavities are provided inside the system-in-package, and a number of functional units of the frequency conversion circuit are buried in a heterogeneous manner in the microcavities. The functional units are signal-interconnected with the metal wiring layer by means of wire bonding; among them, the system-in-package forms a number of microcavities for heterogeneous burial of a number of functional units through selective etching and wafer-level bonding of each layer of dielectric plate, and the microcavities can be designed based on the characteristics of the frequency conversion circuit;

[0036] An inductor 18 of the frequency conversion circuit is connected to the upper end of the system-in-package, and an external interface 17 in the form of a ball grid array (BGA) is connected to the lower end of the system-in-package. Specifically, lead-tin balls with a diameter of 0.4 mm are used, and positions for fixing radio frequency, local oscillator, digital, and power interfaces are provided on the external interface 17.

[0037] The functional units include a number of chips; two chips in the same microcavity are wire-bonded to realize signal interconnection between the two chips in the same microcavity; two chips in different microcavities are wire-bonded to the metal wiring layer, and the metal wiring layer interconnects the signal planes, and the dielectric vias 6 vertically interconnect the signals, so as to realize signal interconnection between the two chips in different microcavities.

[0038] Specifically, the chips inside the system-in-package include limiter chips, filter chips, numerically controlled attenuator chips, low-noise amplifier chips, driver amplifier chips, attenuator chips, mixer chips, bulk acoustic wave filter chips, surface acoustic wave filter chips, temperature-compensated attenuator chips, switch chips, switch filter chips, capacitor chips, and inductor chips.

[0039] The dielectric plate can be made of high-resistivity silicon, glass, etc. The thickness of the dielectric plate is 100 um to 1000 um, preferably 100 um to 500 um; the metal wiring layer can be made of gold, copper, silver, tungsten, molybdenum, etc. The thickness of the metal wiring layer is 1 um to 15 um; the dielectric vias 6 are through-silicon vias (TSVs) or through-glass vias (TGVs), and the via filling is a solid through-hole to ensure the airtightness of the radio frequency front-end frequency conversion microsystem.

[0040] Preferably, the height of the microcavity matches the maximum height of the components in the functional unit; if the maximum height of the components is less than the height of a dielectric plate, the height of the microcavity is twice the height of the dielectric plate; if the maximum height of the components is not less than the height of a dielectric plate, the height of the microcavity is at least three times the height of the dielectric plate; more preferably, components with a height not less than 0.25 mm are placed on the upper surface of the first lower dielectric plate, and components with a height less than 0.25 mm are placed on the upper surface of the second lower dielectric plate, and the second dielectric plate is the first dielectric plate above the first dielectric plate.

[0041] Preferably, a preselection filter microcavity is designed inside the system-in-package to achieve heterogeneous embedding of multiple preselection filters; specifically, the size of the preselection filter microcavity is ≥5.1 mm × 6.1 mm, which can be compatible with the assembly of 1-channel to 7-channel switch filter chips.

[0042] Preferably, a preamplifier microcavity is designed inside the system-in-package to be compatible with the heterogeneous embedding of amplifiers with and without bias circuits.

[0043] Preferably, two frequency conversion microcavities are designed in the system-in-package to heterogeneously integrate at least two mixer chips.

[0044] Preferably, multiple first intermediate frequency filter microcavities are designed in the system-in-package to achieve heterogeneous embedding of at least three first intermediate frequency filters.

[0045] Preferably, multiple second intermediate frequency filter microcavities are designed in the system-in-package to achieve heterogeneous embedding of at least three second intermediate frequency filters; specifically, three second intermediate frequency filter microcavities can be designed and divided into two categories to be used for heterogeneous integration of surface acoustic wave filters and monolithic microwave integrated (MMIC) filters made of GaAs respectively. The size of the second intermediate frequency corresponds to the size of the surface acoustic wave filter and the MMIC filter to determine the size of the microcavity. The length of the microcavity is equal to the length of each filter plus 0.2 mm, and the width of the microcavity is equal to the width of each filter plus 0.2 mm; specifically, the size of the microcavity for embedding the surface acoustic wave filter is ≥4.1 mm × 3.8 mm, and the size of the microcavity for embedding the GaAs filter is ≥5.1 mm × 3.6 mm.

[0046] Preferably, a coaxial-like vertical interconnection structure is arranged at the bottom of each second intermediate frequency filter microcavity and connected to the bottom BGA; specifically, a coaxial-like vertical interconnection structure is arranged at the bottom of the microcavity for embedding the second intermediate frequency GaAs filter and connected to the bottom BGA.

[0047] Preferably, one input and output interface for the second intermediate frequency filter is reserved in the radio frequency front-end frequency conversion microsystem.

[0048] Preferably, when there is extra space in the microcavity on the RF transmission path of the RF front-end frequency conversion microsystem, a 0 dB attenuator or a through transmission line chip can be assembled in the extra space to prevent the bonding wire from being too long, thus ensuring the continuity of the RF transmission path.

[0049] Preferably, positions for welding an inductor 18, capacitors, and resistors are reserved at the upper end of the system-level package. Specifically, there are a first welding part for welding the inductor 18, a second welding part for welding capacitors, and a third welding part for welding resistors.

[0050] Preferably, the functional unit includes a preamplifier, and the inductor 18 is located above the preamplifier so that the inductor 18 is as close as possible to the microcavity of the preamplifier, thus ensuring good matching of the ultra-wideband amplifier.

[0051] Preferably, the external interface 17 includes an RF input interface, an RF output interface, a first local oscillator signal interface, and a second local oscillator signal interface; the planar transmission structure on the metal wiring layer, the vertical transmission structure on the dielectric via 6, the RF input interface RFin, the RF output interface RFout, the first local oscillator signal interface LO1, and the second local oscillator signal interface LO2 are all broadband transmission structures and can support RF signal transmission below 30 GHz.

[0052] Therefore, compared with traditional frequency conversion modules with the same performance, the present invention can reduce the volume by dozens of times, double the integration density, support more channels in the RF front-end frequency conversion microsystem, and expand the application of the RF front-end frequency conversion microsystem in future miniaturized and lightweight scenarios;

[0053] The general-purpose packaging design of the present invention can realize various circuit topologies to overcome the difficulties of high research and development costs and long research and development cycles caused by the need to redesign the package for each circuit structure;

[0054] The present invention pre-sets the design of the microcavity to realize the reconfigurability of the instantaneous bandwidth and the intermediate frequency by assembling different first intermediate frequency filters and second intermediate frequency filters, thereby greatly expanding the application range of the product;

[0055] The micro-system architecture design of the present invention can realize the full-automatic and batch production and assembly of the frequency conversion module, avoid manual debugging at the same time, and can greatly reduce the cost and production cycle of the product;

[0056] The integrated design of the present invention can avoid the use of components such as RF cables, connectors, and structural parts required for traditional frequency conversion modules. While saving costs, it shortens the signal transmission path in the RF front-end frequency conversion microsystem and reduces the system power consumption of the RF front-end frequency conversion microsystem.

[0057] The following gives specific embodiments of the present invention, such as Figure 1As shown in the figure, the radio frequency front-end frequency conversion microsystem is formed by bonding and stacking five layers of 250-μm-thick high-resistivity silicon (resistivity > 5 kΩ·cm), specifically, the first high-resistivity silicon plate 1, the second high-resistivity silicon plate 2, the third high-resistivity silicon plate 3, the fourth high-resistivity silicon plate 4, and the fifth high-resistivity silicon plate 5 stacked in sequence from bottom to top;

[0058] On the upper and lower surfaces of each layer of high-resistivity silicon, there is about 5-μm gold as the circuit wiring layer. Among them, on the upper and lower surfaces of the fifth high-resistivity silicon plate 5, the first gold wiring layer 7 and the second gold wiring layer 8 are respectively arranged; on the upper and lower surfaces of the fourth high-resistivity silicon plate 4, the third gold wiring layer 9 and the fourth gold wiring layer 10 are respectively arranged; on the upper and lower surfaces of the third high-resistivity silicon plate 3, the fifth gold wiring layer 11 and the sixth gold wiring layer 12 are respectively arranged; on the upper and lower surfaces of the second high-resistivity silicon plate 2, the seventh gold wiring layer 13 and the eighth gold wiring layer 14 are respectively arranged; on the upper and lower surfaces of the first high-resistivity silicon plate 1, the ninth gold wiring layer 15 and the tenth gold wiring layer 16 are respectively arranged;

[0059] The interconnection between the radio frequency front-end frequency conversion microsystem and external signals is realized through the external interface 17 in the form of BGA at the lower end. The specific interface distribution is as Figure 2 shown.

[0060] This radio frequency front-end frequency conversion microsystem completes circuit functions such as radio frequency signal reception, limiting, filtering, amplification, digital control attenuation, and frequency conversion. The corresponding circuit principle block diagram is as Figure 3 shown. The radio frequency front-end frequency conversion microsystem includes a limiter chip, a filter chip, an amplifier chip, a digital control attenuator chip, a frequency converter chip, a temperature compensation attenuator chip, a switch chip, a capacitor chip, and an inductor chip.

[0061] In this radio frequency front-end frequency conversion microsystem, components with a height of not less than 250 μm are placed on the upper surface of the first high-resistivity silicon plate 1, and components with a height less than 250 μm and chips in series with capacitors are placed on the upper surface of the second high-resistivity silicon plate 2; each component is connected according to Figure 3 shown, and components in the same microcavity are electrically connected by wire bonding with gold wires. Components in different microcavities first connect the electrical signals to the fifth gold wiring layer 11 by wire bonding with gold wires, and then realize the electrical signal connection between different microcavities through the planar routing of the gold wiring layer and the interlayer routing of the TSV (through-silicon via) 6.

[0062] The radio frequency front-end frequency conversion microsystem completes the detailed layout design according to the requirements of the frequency conversion circuit index and the three-dimensional heterogeneous integration process, and each component is heterogeneously buried in different microcavities.

[0063] The radio frequency front-end frequency conversion microsystem designs three independent second intermediate frequency filter microcavities. One of the second intermediate frequency filter microcavities has a size of 5.1 mm × 3.6 mm, and the other two second intermediate frequency filter microcavities have sizes of 3.8 mm × 3.8 mm and 4.1 mm × 3.5 mm respectively. These three second intermediate frequency filter microcavities can complete the heterogeneous embedding of GaAs filters and surface acoustic wave filters.

[0064] The radio frequency front-end frequency conversion microsystem designs a preselection filter microcavity with a size of 5.1 mm × 6.1 mm, which can complete the heterogeneous embedding of a 7-channel switched filter chip.

[0065] The radio frequency front-end frequency conversion microsystem designs two frequency conversion microcavities, namely a first intermediate frequency conversion microcavity and a second intermediate frequency conversion microcavity. Among them, the first intermediate frequency conversion microcavity heterogeneously embeds a mixer chip, two attenuator chips, an amplifier chip and corresponding peripheral capacitors; the second intermediate frequency conversion microcavity heterogeneously embeds a mixer chip, a bulk acoustic wave filter chip, a numerically controlled attenuator chip and corresponding capacitors, and two fixed attenuator chips.

[0066] The radio frequency front-end frequency conversion microsystem designs a first intermediate frequency amplification and filtering microcavity between the two frequency conversion microcavities. The first intermediate frequency amplification and filtering microcavity heterogeneously embeds a bulk acoustic wave filter chip, an amplifier chip and their corresponding capacitors.

[0067] The radio frequency front-end frequency conversion microsystem designs an ultra-wideband preamplifier microcavity. The ultra-wideband preamplifier microcavity heterogeneously embeds an amplifier chip and four capacitor devices required for its corresponding peripheral circuit. The inductor 18 required by the amplifier is placed on the upper surface of the fifth high-resistance silicon plate 5 and is located at the top of the ultra-wideband preamplifier microcavity and close to the ultra-wideband preamplifier microcavity. Its electrical interconnection is realized through the TSV (through-silicon via) 6 and wire bonding.

[0068] The specific interface distribution of the external interface 17 of the radio frequency front-end frequency conversion microsystem is as Figure 2 shown. The external interface 17 adopts the BGA form with a ball diameter of 400 um. The radio frequency input signal, the first local oscillator signal and the second local oscillator signal enter the system-level package through the radio frequency input interface RFin, the first local oscillator signal interface LO1 and the second local oscillator signal interface LO2 respectively; the radio frequency output signal is output from the system-level package through the radio frequency output interface RFout; G7-G18, H7-H18, J7-J18, S7-S18, T7-T18, U7-U18 are power supply and control signal interfaces; N10 and N22 are input and output interfaces for reserved external filters; the rest are ground interfaces.

[0069] In summary, compared with traditional frequency conversion functional modules with the same performance, the volume and weight of this RF front-end frequency conversion microsystem are reduced by dozens of times. At the same time, the use and installation of components such as cavities, covers, and connectors are eliminated, which improves the assembly efficiency and further reduces the hardware cost. This RF front-end frequency conversion microsystem has good performance consistency, can avoid a large amount of manual debugging work, and greatly accelerates its rapid application in various systems, thus meeting the urgent needs of rapid R & D and iteration of various products.

[0070] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

[0071] Although the present invention has been described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the present invention. Therefore, it should be understood that many modifications can be made to the exemplary embodiments, and other arrangements can be designed, as long as they do not deviate from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein can be combined in a manner different from that described in the original claims. It should also be understood that the features described in connection with a single embodiment can be used in other described embodiments.

Claims

1. A reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem, characterized in that: The system-level package includes a plurality of dielectric plates stacked and sealed by wafer-level bonding, the upper and lower surfaces of the dielectric plates are both grown with metal wiring layers for realizing signal plane interconnection, and the dielectric plates are provided with dielectric through holes for vertical signal interconnection; A plurality of microcavities are arranged in the system-level package, and a plurality of functional units of the frequency conversion circuit are buried in the plurality of microcavities in a heterogeneous manner, and the functional units are interconnected with the metal wiring layer signals by means of gold wire bonding; The upper end of the system-level package is connected to the inductor of the frequency conversion circuit, and the lower end of the system-level package is connected to the external interface in the form of a ball grid array.

2. A reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1, characterized in that: The system-level package is configured to complete signal reception, channel selection, frequency conversion, filtering, amplification and controllable attenuation of the RF front-end frequency conversion microsystem.

3. The reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1, characterized in that: The functional unit includes a plurality of chips; two chips in the same microcavity are gold-wire bonded to realize signal interconnection between the two chips in the same microcavity; two chips in different microcavities are gold-wire bonded to the metal wiring layer, the metal wiring layer interconnects the signal planes, and the dielectric through-holes interconnect the signals vertically to realize signal interconnection between the two chips in different microcavities.

4. The reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1, characterized in that: The dielectric plate is a silicon plate or a glass plate; and / or the metal wiring layer is one of a gold layer, a copper layer, a silver layer, a tungsten layer and a molybdenum layer; and / or the dielectric through hole is a silicon through hole or a glass through hole.

5. The reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1, characterized in that: The thickness of the dielectric plate is 100um to 1000um; and / or the thickness of the metal wiring layer is 1um to 15um.

6. A reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1 or 5, characterized in that: The height of the microcavity matches the maximum height of the functional unit; if the maximum height of the functional unit is less than the height of one dielectric plate, the height of the microcavity is twice the height of the dielectric plate; if the maximum height of the functional unit is not less than the height of one dielectric plate, the height of the microcavity is at least three times the height of the dielectric plate.

7. The reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1, characterized in that: The upper end of the system-level package is provided with a first welding portion for welding an inductor, a second welding portion for welding a capacitor, and a third welding portion for welding a resistor.

8. A reconfigurable three-dimensional heterogeneous integrated universal radio frequency front-end frequency conversion microsystem according to claim 1 or 7, characterized in that: The functional unit includes a pre-amplifier, and the inductor is located on the top of the pre-amplifier and close to a microcavity for heterogeneously burying the pre-amplifier.

9. The reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 1, characterized in that: The external interface includes a radio frequency input interface, a radio frequency output interface, a local oscillator signal interface and a second local oscillator signal interface.

10. The reconfigurable three-dimensional heterogeneous integrated universal RF front-end frequency conversion microsystem according to claim 9, characterized in that: The planar transmission structure on the metal wiring layer, the vertical transmission structure on the dielectric through hole, the RF input interface, the RF output interface, the local oscillator signal interface and the second local oscillator signal interface are all broadband transmission structures.

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