Polymer, preparation method thereof, composition, photoelectric device and display device

Abstract

The invention discloses a polymer, a preparation method thereof, a composition, a photoelectric device and a display device. The polymer provided by the technical scheme of the invention has good hole mobility, is not liable to fluorescence quenching, can be subjected to solution processing, and is more stable than small molecules.

Description

Technical Field

[0001] The present application relates to the field of semiconductor materials, and particularly to a polymer, a preparation method thereof, a composition, an optoelectronic device and a display device. Background Art

[0002] Polymer materials such as poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB) and poly(N-vinylcarbazole) (PVK) have advantages such as hole transport performance and solution processability, and are currently relatively commonly used P-type semiconductor materials. However, in practical applications, the hole transport performance of these materials is still slightly insufficient and it is difficult to meet the requirements of high hole transport.

[0003] Therefore, it is urgent to improve the hole transport performance of the materials. Summary of the Invention

[0004] In view of this, the present application provides a polymer, a preparation method thereof, a composition, an optoelectronic device and a display device.

[0005] In a first aspect, an embodiment of the present application provides a polymer having a structure shown in formula (I):

[0006] (I):

[0007] wherein, n is selected from any integer from 5 to 50;

[0008] Ar1, Ar2, and Ar3 are each independently selected from any one of a substituted or unsubstituted benzene ring, a substituted or unsubstituted single heterocycle, a substituted or unsubstituted fused aromatic ring having 10 to 30 ring atoms, and a substituted or unsubstituted fused heteroaromatic ring having 8 to 30 ring atoms;

[0009] R is selected from one or a combination of more than one of a substituted or unsubstituted C1-C20 alkyl group and a substituted or unsubstituted aryl group having 6 to 20 ring atoms;

[0010] When being substituted by a substituent, each occurrence of the substituent is independently selected from one or a combination of more than one of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group having 6 to 20 ring atoms, and a heteroaryl group having 5 to 20 ring atoms.

[0011] In a second aspect, the present application also provides a preparation method of a polymer, comprising the following steps:

[0012] Radicalize compound A to obtain intermediate m;

[0013] Mix the intermediate m and a halogenating agent, and react to obtain intermediate n;

[0014] Mix the intermediate n and compound B, and react to obtain polymer M;

[0015] Among them, the structural formulas of the compound A, intermediate m, intermediate n, compound B, and polymer M are as follows:

[0016]

[0017] Among them, Z is selected from a halogen group, and n is selected from any integer from 5 to 50;

[0018] Ar1, Ar2, and Ar3 are each independently selected from any one of a substituted or unsubstituted benzene ring, a substituted or unsubstituted single heterocycle, a substituted or unsubstituted fused aromatic ring having 10 to 30 ring atoms, and a substituted or unsubstituted fused heteroaromatic ring having 8 to 30 ring atoms; R is selected from one or a combination of more than one of a substituted or unsubstituted C1-C20 alkyl group and a substituted or unsubstituted aryl group having 6 to 20 ring atoms; when substituted by a substituent, each occurrence of the substituent is independently selected from one or a combination of more than one of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group having 6 to 20 ring atoms, and a heteroaryl group having 5 to 20 ring atoms.

[0019] In a third aspect, the present application also provides a composition, including a polymer and a solvent, where the polymer includes the polymer described above, or includes a polymer prepared by the preparation method described above.

[0020] In a fourth aspect, the present application also provides an optoelectronic device, including an anode, a hole functional layer, and a cathode, where the material of the hole functional layer includes the polymer described above, or includes a polymer prepared by the preparation method described above, or is made from the composition described above.

[0021] In a fifth aspect, the present application also provides a display device, including the optoelectronic device described above.

[0022] The polymer provided by the technical solution of the present application has good hole mobility, is not easily quenched by fluorescence, can be processed by solution, and the polymer is more stable than small molecules. Description of the Drawings

[0023] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0024] Figure 1 is a schematic structural diagram of an embodiment of an optoelectronic device provided by the present application;

[0025] Reference numerals: optoelectronic device 100; anode 10; cathode 20; electron transport layer 30; light-emitting layer 40; hole injection layer 50; hole transport layer 60. Specific embodiments

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" specifically refer to the drawing directions in the drawings. In addition, in the description of the present application, the term "including" means "including but not limited to". The various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0027] In the present application, "and / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B may be singular or plural.

[0028] In this application, "at least one" means one or more, and "a plurality" means two or more. "At least one kind", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single item (item) or plural items (items). For example, "at least one (item) among a, b, or c", or "at least one (item) among a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0029] Glossary of terms

[0030] In this application, "substituted or unsubstituted" means that the defined group can be substituted or not. When the defined group is substituted, it should be understood as being optionally substituted by groups acceptable in the art, including but not limited to: D (deuterium), halogen groups, nitro groups, amino groups, mercapto groups, hydroxyl groups, carboxyl groups, sulfonic acid groups, cyano groups, C1 - C20 alkyl groups, C1 - C20 alkoxy groups, C1 - C20 alkyl carbonyl groups, C1 - C20 alkoxy carbonyl groups, aryl groups with 6 - 20 ring atoms, heteroaryl groups with 5 - 20 ring atoms, or a combination of one or more of them. In this application, "combination of multiple kinds" means the situation where at least one hydrogen in a group is substituted by other groups (it can be substituted by one other group or multiple other groups). For example, the combination of an aryl group and an alkyl group can be a substituent formed by substituting one or more hydrogens in the aryl substituent with an alkyl group, or a substituent formed by substituting one or more hydrogens in the alkyl substituent with an aryl group; the combination of a heteroaryl group, an alkyl group, and a halogen group can be a substituent formed by substituting multiple hydrogens in the heteroaryl substituent with an alkyl group and a halogen group respectively, or a substituent formed by substituting at least one hydrogen in the heteroaryl substituent with a haloalkyl group, or a substituent formed by substituting multiple hydrogens in the alkyl group with a heteroaryl group and a halogen group respectively.

[0031] In this application, when the same substituent appears multiple times, it can be independently selected from different groups. For example, if the general formula contains multiple R1s, then R1s can be independently selected from different groups. 6 Rs on the benzene ring 1 can be the same as or different from each other.

[0032] In this application, "alkyl" can represent a straight-chain alkyl group, a branched-chain alkyl group, and / or a cyclic alkyl group. The number of carbon atoms in the alkyl group can be 1 - 50, 1 - 30, 1 - 20, 1 - 10, or 1 - 6. Phrases containing this term, for example, "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each occurrence can independently be a C1 alkyl group, C2 alkyl group, C3 alkyl group, C4 alkyl group, C5 alkyl group, C6 alkyl group, C7 alkyl group, C8 alkyl group, or C9 alkyl group. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyl octyl, 2-hexyloctyl, 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyl decyl, 2-butyl decyl, 2-hexyl decyl, 2-octyl decyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyl dodecyl, 2-hexyl dodecyl, 2-octyl dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butyl hexadecyl, 2-hexyl hexadecyl, 2-octyl hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyl eicosyl, 2-butyl eicosyl, 2-hexyl eicosyl, 2-octyl eicosyl, n-heneicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontyl, etc. Thioalkyl refers to a group in which at least one hydrogen in the alkyl group is replaced by a sulfur atom.

[0033] In this application, "-C n H 2n+1 ", without special indication or limitation, represents a straight-chain alkyl group. For example, -C6H 13 represents n-hexyl, -C 12 H 25 represents n-dodecyl.

[0034] In this application, "the number of ring atoms" represents the number of atoms in the ring itself of a structural compound formed by bonding atoms in a ring (for example, a monocyclic compound or a polycyclic compound). It can be understood that the ring atoms are not limited to carbon atoms. When a heterocycle is contained in a cyclic compound, the heteroatom is also an atom constituting the heterocycle and belongs to the ring atoms. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring-forming atoms. The same applies to the "number of ring atoms" described below without special explanation. For example, the number of ring atoms in a benzene ring is 6, the number of ring atoms in a naphthalene ring is 10, and the number of ring atoms in a thiophenyl group is 5.

[0035] In the present application, "aryl, aryl group or aromatic group" refers to a hydrocarbon group containing at least one aromatic ring, such as a monocyclic compound, a fused-ring compound or a polycyclic non-fused compound, etc. "Heterocycle" includes two categories: aliphatic heterocycle and aromatic heterocycle. Among them, "aliphatic heterocycle" is a heterocycle in which the heterocycle in the molecular skeleton does not exhibit aromaticity, and it can be a ring formed by replacing at least one ring carbon atom in an aliphatic ring compound with a heteroatom; "heteroaryl, aromatic heterocycle, heteroaromatic group or heteroaromatic group" refers to an aromatic hydrocarbon group containing at least one heteroatom, such as a monocyclic compound containing at least one heteroatom, a fused-ring compound containing at least one heteroatom or a polycyclic non-fused compound containing at least one heteroatom, etc. The heteroatom is preferably selected from Si, N, P, O, S and / or Ge, and particularly preferably selected from Si, N, P, O and / or S. Among them, the fused-ring compound or the fused compound has the same meaning and can be interchanged. Specifically, it means that the compound can have two or more rings, and two ring atoms are shared by two adjacent rings, that is, a fused ring. For the purposes of the present application, the aromatic group or heteroaromatic group includes not only the system of aromatic rings, but also non-aromatic ring systems. Therefore, for example, systems such as pyridine, thiophene, pyrrole, pyrazole, triazole, imidazole, oxazole, oxadiazole, thiazole, tetrazole, pyrazine, pyridazine, pyrimidine, triazine, carbene, etc. are also considered aromatic groups or heteroaromatic groups for the purpose of this invention. For the purposes of the present application, the fused-ring aromatic or fused heteroaromatic ring system includes not only the system of aromatic groups or heteroaromatic groups, but also, in which multiple aromatic groups or heteroaromatic groups can also be interrupted by short non-aromatic units (<10% non-H atoms, preferably less than 5% non-H atoms, such as C, N or O atoms). Therefore, for example, systems such as 9,9'-spirobifluorene, 9,9-diarylfluorene, triarylamine, diaryl ether, etc. are also considered fused-ring aromatic ring systems for the purpose of this invention.

[0036] In a preferred embodiment, the aromatic group is selected from: benzene, naphthalene, anthracene, fluoranthene, phenanthrene, benzo[a]phenanthrene, dibenzo[a,h]anthracene, tetracene, pyrene, benzo[a]pyrene, acenaphthene, fluorene, and their derivatives; the heteroaromatic group is selected from triazine, pyridine, pyrimidine, imidazole, furan, thiophene, benzofuran, benzothiophene, indole, carbazole, pyrroloimidazole, pyrrolopyrrole, thiophenopyrrole, thiophenothiophene, furanopyrrole, furanofuran, thiophenofuran, benzoisoxazole, benzoisothiazole, benzimidazole, quinoline, isoquinoline, phthalazine, quinoxaline, phenanthridine, perimidine, quinazoline, quinazolinone, dibenzothiophene, dibenzofuran, carbazole and their derivatives.

[0037] In the present application, amino represents -NR 1 R 2 wherein, R 1 R 2Each independently represents H or an alkyl group, that is, the amino group can refer to -NH2, -NH(alkyl), or -N(alkyl)(alkyl).

[0038] In this application, the "halogen group" represents -Cl, -Br, -F, or -I.

[0039] The embodiments of this application provide a polymer having the structure shown in formula (I):

[0040] (I):

[0041] Wherein, n is selected from any integer from 5 to 50;

[0042] Ar1, Ar2, and Ar3 are each independently selected from any one of a substituted or unsubstituted benzene ring, a substituted or unsubstituted single heterocycle, a substituted or unsubstituted fused aromatic ring with 10 to 30 ring atoms, and a substituted or unsubstituted fused heteroaromatic ring with 8 to 30 ring atoms;

[0043] R is selected from one or more combinations of a substituted or unsubstituted C1-C20 alkyl group and a substituted or unsubstituted aryl group with 6 to 20 ring atoms;

[0044] When substituted by a substituent, each occurrence of the substituent is independently selected from one or more combinations of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group with 6 to 20 ring atoms, and a heteroaryl group with 5 to 20 ring atoms.

[0045] The polymer provided by the technical solution of this application has good hole mobility, is not easily fluorescently quenched, can be solution-processed, and the polymer is more stable than small molecules.

[0046] In some embodiments, Ar1 is selected from any one of a substituted or unsubstituted fused aromatic ring with 10 to 30 ring atoms and a substituted or unsubstituted fused heteroaromatic ring with 8 to 30 ring atoms.

[0047] In some embodiments, Ar2 and Ar3 are each independently selected from any one of a substituted or unsubstituted benzene ring and a substituted or unsubstituted fused aromatic ring with 10 to 30 ring atoms.

[0048] In some embodiments, -R · is selected from the following structures:

[0049]

[0050] Among them, Ar4, Ar5, and Ar6 are each independently selected from any one of a benzene ring substituted with a halogen group and a fused aromatic ring having 10 to 30 ring atoms substituted with a halogen group.

[0051] In some embodiments, the polymer has the structure shown in formula (I-1):

[0052] (I-1):

[0053] Among them, n is selected from any integer from 5 to 50;

[0054] X is selected from a halogen group;

[0055] R1 and R2 are each independently selected from any one of a substituted or unsubstituted C1 to C30 alkoxy group and a substituted or unsubstituted thiophene group;

[0056] When substituted by a substituent, each occurrence of the substituent is independently selected from one or a combination of more of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group having 6 to 20 ring atoms, and a heteroaryl group having 5 to 20 ring atoms.

[0057] The polymer provided by the technical solution of the present application is an organic radical compound, and there is an organic radical in its molecular structure. This radical is composed of three benzene rings, has high chemical stability, is not easily destroyed, can give full play to the advantages of the radical, makes the polymer have a high conductivity, and the spin multiplicity of the organic radical is always 2, which excludes the possibility of fluorescence quenching caused by intersystem energy transfer; at the same time, the polymer is polymerized with a carbazole group and a benzodithiophene group having a conjugated rigid structure, and the radical connected in the carbazole group has a highly conjugated structure, thus obtaining a highly conjugated polymer system, which can not only make the polymer have good transport properties, but also stabilize the radical; the polymer has good hole mobility, is not easily fluorescence quenched, can be solution processed, and the polymer is more stable than small molecules. The polymer can be used as a hole injection material or a hole transport material, and is used to form the hole transport layer 60 or the hole injection layer 50 of the optoelectronic device 100. And because it has high hole migration performance, it has better matching with electron transport materials with high electron mobility such as metal oxide nanoparticles, which helps to improve the balance of hole injection and electron injection in the device, and further improves the optoelectronic performance and service life of the device.

[0058] In some embodiments, X is selected from Cl. Correspondingly, the structural formula of the polymer is as follows:

[0059]

[0060] Each of R1 and R2 is independently selected from any one of substituted or unsubstituted C1-C30 alkoxy groups and substituted or unsubstituted thiophenyl groups. R1 and R2 may be the same or different.

[0061] In some embodiments, when R1 or R2 is selected from an alkoxy group or a thiophenyl group substituted with a substituent, each occurrence of the substituent may be independently selected from one or a combination of more than one of D, a halogen group, a C1-C20 alkyl group, and a C1-C20 alkoxy group.

[0062] In some embodiments, each of R1 and R2 is independently selected from one of the following structures:

[0063]

[0064] Wherein, R3 is selected from C6-C24 alkyl groups; Y1 and Y2 are each independently selected from hydrogen or a halogen group.

[0065] In some specific embodiments, the polymer includes one or more of the following structural formulas:

[0066]

[0067] The embodiments of the present application also provide a preparation method of a polymer. The synthesis route of the preparation method is as follows:

[0068]

[0069] Specifically, the preparation method includes the following steps:

[0070] S1, radicalize compound A to obtain intermediate m;

[0071] S2, mix the intermediate m with a halogenating agent and react to obtain intermediate n;

[0072] S3, mix the intermediate n with compound B and react to obtain polymer M;

[0073] Wherein, the structural formulas of compound A, intermediate m, intermediate n, compound B, and polymer M are as shown above. Through the above preparation method, a polymer having the structure shown in formula (I) can be prepared.

[0074] In some other embodiments, the polymer has the structure shown in formula (I-1). Correspondingly, the structures of compound A, intermediate m, intermediate n, and compound B are adjusted accordingly. The following is the synthesis route of the polymer having the structure shown in formula (I-1):

[0075]

[0076] The preparation method comprises the following steps:

[0077] S10: Mix compound C and trihalomethane and conduct a first reaction to obtain intermediate a;

[0078] S20: Mix the intermediate a and tetrachlorobenzoquinone and conduct a second reaction to obtain intermediate b;

[0079] S30: Mix the intermediate b and carbazole and conduct a third reaction to obtain compound A-1;

[0080] S40: Mix the compound A-1 and tetrachlorobenzoquinone and conduct a fourth reaction to obtain intermediate m-1;

[0081] S50: Mix the intermediate m-1 and a halogenating agent and conduct a fifth reaction to obtain intermediate n-1;

[0082] S60: Mix the intermediate n-1 and compound B and conduct a sixth reaction to obtain polymer M.

[0083] The structural formulas of the compound C, intermediate a, intermediate b, compound A-1, intermediate m-1, intermediate n-1, compound B-1 and polymer M are as shown above. Returning to the above synthetic route, X, Y, and Z are each independently selected from halogen groups; for example, they can be -F, -Cl, -Br or -I. In some embodiments, X and Y are each independently selected from -Cl; Z is selected from Br. Among them, R1 and R2 are each independently selected from substituted or unsubstituted C1-C30 alkoxy groups, substituted or unsubstituted thiophenyl groups; R1 and R2 can be the same or different. When substituted by a substituent, each occurrence of the substituent is independently selected from one or more combinations of D, halogen groups, nitro groups, amino groups, mercapto groups, hydroxyl groups, carboxyl groups, sulfonic acid groups, cyano groups, C1-C20 alkyl groups, C1-C20 alkoxy groups, C1-C20 alkyl carbonyl groups, C1-C20 alkoxy carbonyl groups, aryl groups with 6-20 ring atoms, and heteroaryl groups with 5-20 ring atoms; n is selected from any integer from 5 to 50.

[0084] In step S10:

[0085] The temperature of the first reaction is 70°C to 90°C; for example, it can be 70°C, 75°C, 80°C, 85°C, 90°C, and values between any two of the above. The time of the first reaction is 2-5 h; for example, it can be 2 h, 2.5 h, 3 h, 3.5 h, 4 h, 4.5 h, 5 h, and values between any two of the above.

[0086] The molar ratio of the trihalomethane to the compound C is 1:(7 - 10); for example, it can be 1:7, 1:7.5, 1:7.8, 1:7.9, 1:8, 1:8.1, 1:8.2, 1:8.5, 1:8.6, 1:8.8, 1:8.9, 1:9, 1:10, and values between any two of the above. Among them, the trihalomethane can be chloroform, bromoform, iodoform, etc. In some embodiments, the trihalomethane is chloroform.

[0087] In step S20:

[0088] The molar ratio of the intermediate a to chloranil is 1:(2 - 4); for example, it can be 1:2, 1:2.5, 1:3, 1:3.5, 1:4, and values between any two of the above.

[0089] The temperature of the second reaction is 20 - 40°C; for example, it can be 20°C, 25°C, 30°C, 35°C, 40°C, and values between any two of the above. The time of the second reaction is 1 - 3 h; for example, it can be 1 h, 1.5 h, 2 h, 2.5 h, 3 h, and values between any two of the above.

[0090] In step S30:

[0091] The molar ratio of the intermediate b to carbazole is 1:(4 - 7); for example, it can be 1:4, 1:5, 1:6, 1:7, and values between any two of the above.

[0092] The temperature of the third reaction is 150 - 170°C; for example, it can be 150°C, 155°C, 160°C, 165°C, 170°C, and values between any two of the above. The time of the third reaction is 2 - 4 h; for example, it can be 2 h, 2.5 h, 3 h, 3.5 h, 4 h, and values between any two of the above.

[0093] In some embodiments, the third reaction is carried out under the protection of a protective gas to avoid side reactions. The protective gas can be one or more of inert gases such as nitrogen and helium.

[0094] In step S40:

[0095] The molar ratio of the compound A-1 to chloranil is 1:(2 - 4); for example, it can be 1:2, 1:2.5, 1:3, 1:3.5, 1:4, and values between any two of the above.

[0096] The temperature of the fourth reaction is 20 to 40 °C; for example, it can be 20 °C, 25 °C, 30 °C, 35 °C, 40 °C, and values between any two of the above. The time of the fourth reaction is 1 to 3 h; for example, it can be 1 h, 1.5 h, 2 h, 2.5 h, 3 h, and values between any two of the above.

[0097] In some embodiments, the fourth reaction is carried out under a protective gas and in a light-shielded environment to avoid the influence of factors such as oxygen and light on the reaction and generate impurities.

[0098] In step S50:

[0099] The halogenating agent can be a common halogenating agent in the art. For example, it can include but is not limited to one or more of liquid bromine and N-bromosuccinimide (NBS). Correspondingly, in the generated product e, Z is Br.

[0100] The molar ratio of the intermediate m-1 to the halogenating agent is 1:(2 to 4); for example, it can be 1:2, 1:2.5, 1:3, 1:3.5, 1:4, and values between any two of the above.

[0101] The time of the fifth reaction is 5 to 15 h; for example, it can be 5 h, 6 h, 7 h, 8 h, 9 h, 10 h, 11 h, 12 h, 13 h, 14 h, 15 h, and values between any two of the above. The fifth reaction is a reflux reaction. In actual synthesis, the mixture of the intermediate m-1 and the halogenating agent is heated to the reflux state, and the product intermediate n-1 can be obtained by continuing for 5 to 15 h.

[0102] In some embodiments, the fifth reaction is carried out under a protective gas and in a light-shielded environment to avoid the influence of factors such as oxygen and light on the reaction and generate impurities.

[0103] In step S60:

[0104] The molar ratio of the intermediate n-1 to the compound B is 1:(0.8 to 1.2); for example, it can be 1:0.8, 1:0.9, 1:1.0, 1:1.1, 1:1.2, and values between any two of the above.

[0105] The time of the sixth reaction is 2 to 10 h; for example, it can be 2 h, 3 h, 4 h, 5 h, 6 h, 7 h, 8 h, 9 h, 10 h, and values between any two of the above. The sixth reaction is a reflux reaction. In actual synthesis, the mixture of the intermediate n-1 and the compound B is heated to the reflux state, and the product polymer M can be obtained by continuing for 2 to 10 h.

[0106] It can be understood that the polymer provided in this application is not limited to being prepared by the preparation method of the polymer provided in this application.

[0107] Based on the above polymer embodiments, the present application further provides a composition, which comprises the above polymer and a solvent. The composition can be used as a hole functional layer ink for preparing the hole functional layer of the optoelectronic device 100.

[0108] In one embodiment, in the composition, the concentration of the polymer is 5 to 15 mg / ml; for example, it can be 5 mg / ml, 6 mg / ml, 7 mg / ml, 8 mg / ml, 9 mg / ml, 10 mg / ml, 12 mg / ml, 14 mg / ml, 15 mg / ml, and values between any two of the above.

[0109] In some embodiments, the solvent may include, but is not limited to, one or more of toluene, chlorobenzene, dichlorobenzene, chloroform, tetralin, and chloronaphthalene.

[0110] In some embodiments, the composition may contain one of the above polymers or two or more of the above polymers.

[0111] In some embodiments, in the composition, in addition to including the polymer and the solvent, a first compound may also be included. The first compound may be other conductive materials or semiconductor materials, such as other hole transport materials or hole injection materials, for example, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), tris(3-methylphenylphenylamino)-triphenylamine (m-MTDATA), poly(p-phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, poly(N-vinylcarbazole) (PVK) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine (NPB), spiro-NPB, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, derivatives of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more of them.

[0112] The composition has good hole generation ability and hole mobility, has good compatibility with common electron transport materials, is used for preparing the hole functional layer of the optoelectronic device 100, helps to promote hole injection, improve carrier balance, and enhance the optoelectronic performance of the device.

[0113] When preparing the hole functional layer using the above composition, solution methods such as spin coating, blade coating, printing, or spraying can be employed on a substrate. After forming a film, annealing is carried out at 150 - 200 °C for 10 - 30 min to obtain the hole functional layer. Among them, the annealing temperature can be 150 °C, 170 °C, 180 °C, 200 °C, and values between any two of the above-mentioned values.

[0114] Furthermore, the present application also proposes an optoelectronic device 100, which includes but is not limited to an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED), and a photodetector. Please refer to Figure 1 , the optoelectronic device 100 includes an anode 10, a hole functional layer, and a cathode 20. The material of the hole functional layer includes the polymer described above, or a polymer prepared by the preparation method of the polymer described above, or is made from the composition described above.

[0115] The hole functional layer of the optoelectronic device 100 contains a polymer. Since the compound has good hole mobility and hole generation ability, when used to fabricate the hole functional layer, it can well enhance the hole injection ability, improve the carrier balance of the device, enhance the optoelectronic performance of the device, and extend the service life of the device.

[0116] In some embodiments, the hole functional layer includes one or both of a hole transport layer 60 and a hole injection layer 50. When the hole functional layer includes the hole transport layer 60 and the hole injection layer 50, the hole injection layer 50 is located between the hole transport layer 60 and the anode 10. In some embodiments, the material of the hole injection layer 50 includes the above-mentioned polymer or is made of a composition. The hole transport layer 60 can be made of a material that also contains the above-mentioned polymer, or can be made of a commonly used hole transport material in the art. For example, it can include, but is not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), tris(3-methylphenylphenylamino)-triphenylamine (m-MTDATA), poly(p-phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbiphenylamine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) (PVK) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine (NPB), spiro NPB, or one or more of them.In some other embodiments, the material of the hole transport layer 60 includes the above polymer or is made of a composition. The hole injection layer 50 can be made of a material that also contains the above polymer, or can be made of a commonly used hole injection material in the art. For example, it can include but is not limited to poly(ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), 2,3,5,6-tetrafluoro-7,7’,8,8’-tetracyanoquinodimethane (F4-TCNQ), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HATCN), copper phthalocyanine (CuPc), poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB), polyarylamine, poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N’,N’-tetrakis(4-methoxyphenyl)-benzidine (TPD), 4-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (α-NPD), 4,4’,4”-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA), 4,4’,4”-tris(N-carbazolyl)-triphenylamine (TCTA), 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), 4,4’,4”-tris(diphenylamino)triphenylamine (TDATA) doped with F4-TCNQ, p-doped phthalocyanine (e.g., F4-TCNQ-doped zinc phthalocyanine (ZnPc)), F4-TCNQ-doped N,N’-diphenyl-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4”-diamine (α-NPD), one or more of transition metal oxides, transition metal chalcogenides; wherein, the transition metal oxides include one or more of NiO, MoO2, WO3, CuO; the metal chalcogenides include one or more of MoS2, MoSe2, WS3, WSe3, CuS. In some embodiments, the thickness of the hole transport layer 60 can be 10 to 100 nm, and the thickness of the hole injection layer 50 can be 10 to 100 nm.

[0117] In some embodiments, the optoelectronic device 100 may further include a light-emitting layer 40, and the light-emitting layer 40 is disposed between the cathode 20 and the hole functional layer. In one embodiment, the material of the light-emitting layer 40 is selected from organic light-emitting materials or quantum dot light-emitting materials.

[0118] The organic light-emitting materials can be selected from at least one of diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, TBPe fluorescent material emitting blue light, TTPA fluorescent material emitting green light, TBRb fluorescent material emitting orange light, and DBP fluorescent material emitting red light.

[0119] The quantum dot light-emitting material may be selected from at least one of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The single-structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from at least one of CuInS, CuInSe, and AgInS. The core of the core-shell structure quantum dots is selected from any one of the above single-structure quantum dots. The shell layer of the core-shell structure quantum dots includes one or more layers, and the shell layer material of the core-shell structure quantum dots is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS.

[0120] As an example, the quantum dots of the core-shell structure may be selected from but not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0121] It should be noted that for the materials of the aforementioned single-structure quantum dots, or the core materials of the core-shell structure quantum dots, or the shell materials of the core-shell structure quantum dots, the chemical formulas provided only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn, and Se. If the content of each element is to be expressed, it corresponds to Cd x Zn 1-x Se, where 0 < x < 1.

[0122] The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ and at least one of them, X is a halogen anion selected from Cl - 、Br - 、I - and at least one of them; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2, M is a divalent metal cation selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ at least one of, X is a halogen anion, selected from Cl - 、Br - 、I - at least one of. When n = 2, the inorganic metal halide octahedron MX6 4- is connected by sharing vertices. The metal cation M is located at the center of the halogen octahedron, and the organic amine cation B fills the voids between the octahedrons, forming an infinitely extended three-dimensional structure; when n > 2, the inorganic metal halide octahedrons MX6 4- connected by sharing vertices extend in two-dimensional directions to form a layered structure. A bilayer of organic amine cations (protonated monoamine) or a monolayer of organic amine cations (protonated diamine) is inserted between the layers, and the organic layer and the inorganic layer overlap with each other to form a stable two-dimensional layered structure.

[0123] In one embodiment, the quantum dot light-emitting material includes one or more of red quantum dots, green quantum dots, and blue quantum dots.

[0124] In one embodiment, the optoelectronic device 100 further includes an electronic functional layer disposed between the cathode 20 and the light-emitting layer 40. The electronic functional layer may include an electron injection layer and / or an electron transport layer 30. When the electronic functional layer includes two layers, namely an electron injection layer and an electron transport layer 30, the electron injection layer is disposed closer to the cathode 20, and the electron transport layer 30 is disposed closer to the light-emitting layer 40. The electronic functional layer may be prepared using electronic functional materials known in the art for the optoelectronic device 100 and having electron transport performance or electron injection performance. Specifically, the material of the electron transport layer 30 includes one or more of metal oxides, doped metal oxides, Group IIB-VIA materials, Group IIIB-VA materials, and Group IB-IIIB-VIA materials; the metal oxides include one or more of ZnO, TiO2, and SnO2; the metal oxides in the doped metal oxides include one or more of ZnO, TiO2, and SnO2, and the doping elements include one or more of Al, Mg, Li, In, and Ga; the Group IIB-VIA materials include one or more of ZnS, ZnSe, CdS, and CdSe; the Group IIIB-VA materials include one or more of InP and GaP; the Group IB-IIIB-VIA materials include one or more of CuInS and CuGaS; the material of the electron injection layer includes at least one of cesium carbonate, cesium fluoride, cesium azide, and lithium fluoride.

[0125] In one embodiment, the anode 10 and the cathode 20 are each independently selected from metal electrodes, carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. Herein, " / " represents a laminated structure. For example, the composite electrode AZO / Ag / AZO represents an electrode with a three-layer laminated composite structure composed of an AZO layer, an Ag layer, and an AZO layer.

[0126] It can be understood that in addition to the above-mentioned functional layers, the optoelectronic device 100 may also be provided with some functional layers that are commonly used in optoelectronic devices 100 and are helpful for improving the performance of the optoelectronic device 100, such as an electron blocking layer, an electron injection layer, a hole blocking layer, and / or an interface modification layer, etc.

[0127] It can be understood that the materials and thicknesses of the various layers of the optoelectronic device 100 can be correspondingly set and adjusted according to the light-emitting requirements of the optoelectronic device 100.

[0128] In some embodiments, the optoelectronic device 100 further includes a substrate (not shown in the figure), and the substrate can also be referred to as a substrate, and the above-mentioned film layer structure is disposed on one side of the substrate. The substrate can be a rigid substrate or a flexible substrate. The rigid substrate can be a ceramic material or various glass materials, etc. The flexible substrate can be a substrate formed of materials such as polyimide film (PI) and its derivatives, polyethylene naphthalate (PEN), phosphoenolpyruvate (PEP), or polyphenylene ether resin. In one embodiment, the material of the substrate includes one or more combinations of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0129] It can be understood that the optoelectronic device 100 can be a normal optoelectronic device 100 or an inverted optoelectronic device 100. When the optoelectronic device 100 is a normal optoelectronic device 100, the substrate is bonded to the side of the anode 10 away from the light-emitting layer 40. When the optoelectronic device 100 is an inverted optoelectronic device 100, the substrate is bonded to the side of the cathode 20 away from the light-emitting layer 40.

[0130] It can be understood that the preparation methods of the various film layers in the optoelectronic device 100 provided in the present application, including the anode 10, the cathode 20, the light-emitting layer 40, the hole functional layer, the electron functional layer, and other film layers, can be realized by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical methods include chemical vapor deposition method, sequential ionic layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, and coprecipitation method. The physical methods include physical coating method and solution method. Among them, the physical coating method includes: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.; the solution method can be spin coating method, printing method, inkjet printing method, scraping method, printing method, dip coating method, soaking method, spraying method, roll coating method, casting method, slot die coating method, and bar coating method, etc.

[0131] It can be understood that the optoelectronic device 100 may further include a packaging layer (not shown in the figure) to isolate water and oxygen (for example, to make the concentrations of oxygen and water lower than 0.1 ppm), thereby improving the performance stability of the optoelectronic device 100. Specifically, the packaging material used to form the packaging layer may be selected from at least one of UV glue, metal thin film, glass glue, etc. In a specific embodiment, the packaging material may be acrylic resin or epoxy resin.

[0132] This application also relates to a display device, which includes the optoelectronic device 100 provided by this application. The display device may be any electronic product with a display function. The electronic products include but are not limited to smartphones, tablet computers, laptop computers, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, in-vehicle displays, televisions, or e-book readers. Among them, the smart wearable devices may be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0133] The following specifically illustrates this application through specific embodiments. The following embodiments are only partial embodiments of this application and do not limit this application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0134] Material Example 1

[0135] The structural formula of the polymer M1 in this embodiment is as follows:

[0136]

[0137] The synthesis route of the polymer in this embodiment is as follows:

[0138]

[0139] The preparation method is specifically as follows:

[0140] (1) A mixture of 1,3,5-trichlorobenzene (A1, 55.9 mmol, CAS: 108-70-3), anhydrous chloroform (6.3 mmol) and aluminum chloride (6.8 mmol) and a mixture of aluminum chloride (6.8 mmol) were heated in a glass pressure vessel at 80 °C for 2.5 h. After cooling to room temperature, the mixture was poured into ice hydrochloric acid (1 mol / mL) and extracted with chloroform multiple times. The organic phase was collected, dried over anhydrous magnesium sulfate, and then the solvent was removed in vacuo. The crude product was purified by silica gel column chromatography. Using pure petroleum ether as the eluent, the required white solid A2 (2.81 g, 81%) was obtained. 1H-NMR (500 MHz, CDCl3): δ 7.39 (d, 3H), 7.26 (d, 3H), 6.71 (s, 1H).

[0141] Under a nitrogen atmosphere and in the dark, a solution of tetrabutylammonium hydroxide in methanol (2.0 mol / mL, 14.3 mmol) was added to a solution of A2 (10 mmol) in freshly distilled THF (175 mL). After the mixture was stirred at room temperature for 5 h, chloranil (27.1 mmol, CAS: 118 - 75 - 2) was added to the reaction mixture, and the reaction was continued for 1 h. After the reaction was completed, the solvent was removed in vacuo. The product formed was adsorbed on silica gel and then purified by silica gel column chromatography. Using pure petroleum ether as the eluent, the desired radical A3 was obtained as a red powder (4.70 g, 85%). (2.81 g, 81%). 1 H-NMR (500 MHz, CDCl3): δ 7.39 (d, 3H), 7.26 (d, 3H).

[0142] A mixture of A3 (1.81 mmol), carbazole (9.0 mmol, CAS: 86 - 74 - 8), anhydrous Cs2CO3 (2.9 mmol) and DMF (20 mL) was stirred at 160 °C for 2.5 h under a nitrogen atmosphere and in the dark. After the reaction mixture was cooled to room temperature, it was poured into a (1 M) hydrochloric acid solution, and the precipitate was filtered. The crude product was purified by silica gel column chromatography to give the desired compound A4 as a light brown solid (0.51 g, 41%). 1 H-NMR (500 MHz, CDCl3): δ 8.18 (d, 2H), 7.69 (d, 1H), 7.55 (d, 1H), 7.53 - 7.45 (m, 5H), 7.41 - 7.33 (m, 4H), 6.91 (s, 1H), 5.48 (s, 1H).

[0143] Under a nitrogen atmosphere and in the dark, a solution of tetrabutylammonium hydroxide in methanol (2.0 mol / L, 3.00 mmol) was added to a solution of A4 (2.1 mmol) in THF (45 mL), and the mixture was stirred at room temperature for 5 h. Then chloranil (5.7 mmol) was added. After the reaction was completed, the solvent was removed in vacuo. The crude product was purified by silica gel column chromatography to give the desired radical A5 (1.20 g, 83%). 1 H-NMR (500 MHz, CDCl3): δ 8.18 (d, 2H), 7.69 (d, 1H), 7.55 (d, 1H), 7.53 - 7.45 (m, 5H), 7.41 - 7.33 (m, 4H), 6.91 (s, 1H).

[0144] Under a nitrogen and light - protected environment, A5 (2 mmol) and N - bromosuccinimide (NBS) (4.4 mmol, 2.2 eq) were added to a reaction flask, and carbon tetrachloride solvent (100 ml) was added. The mixture was heated under reflux for 10 h. The crude product was purified by silica gel column chromatography to obtain the desired A6 (1.53 g, 91%). 1 1H - NMR (500 MHz, CDCl3): δ 7.80 (s, 2H), 7.72 (s, 2H), 7.59 (s, 4H), 7.47 (d, 2H), 7.25 (d, 2H).

[0145] (2) Polymer synthesis:

[0146] Synthesis of B1: Under a nitrogen environment, B1 - 1 (CAS: 33527 - 21 - 8, 10 mmol) was added to a reaction flask and stirred at 0 °C for 1 h. Subsequently, B1 - 2 (CAS: 143 - 15 - 7, 22 mmol), Zn powder (1 mmol), sodium hydroxide (1 ml), and 200 ml of ethanol were added. The reaction was carried out overnight, and after the reaction was completed, the solvent was removed in vacuo. The crude product was purified by silica gel column chromatography to obtain the desired B1 - 3 4.8 g, 86%. 1 1H - NMR (500 MHz, CDCl3): δ 7.78 (d, 2H), 7.76 (d, 2H), 4.06 (d, 4H), 1.26 - 1.76 (m, 40H), 0.88 (m, 6H).

[0147] Under a nitrogen environment, B1 - 3 (1 mmol) was added to a reaction flask, the temperature was lowered to - 78 °C, and n - butyllithium (2.2 mmol, 1 mol / L) was added dropwise. The reaction was carried out for 1 h, and then trimethyltin chloride (2.2 mmol) was added, and the reaction was continued overnight. After the reaction was completed, the solvent was removed in vacuo. The crude product was recrystallized from ethanol to obtain 1 1H - NMR (500 MHz, CDCl3): δ 7.59 (s, 2H), 4.06 (d, 4H), 1.26 - 1.76 (m, 40H), 0.88 (m, 6H), 0.27 (s, 18H).

[0148] Synthesis of the polymer: Under a nitrogen environment, A6 (0.1 mmol) and B1 (0.1 mmol) were added to a reaction flask, and tetrakis(triphenylphosphine)palladium (0.002 mmol) as a catalyst was added. 5 ml of toluene solvent was added, and the mixture was heated under reflux for 2 - 10 h until the solution turned purple - black. Subsequently, it was cooled to room temperature and precipitated into 200 ml of methanol. Soxhlet extraction was carried out successively with n - hexane, dichloromethane, and chlorobenzene. The solution was concentrated, precipitated into 200 ml of methanol, filtered, and dried to obtain a purple - black solid M1 (1.05 g, 88%), Mn = 3.5 kDa, PDI = 1.9.

[0149] Material Example 2

[0150] The structural formula of polymer M2 in this example is as follows:

[0151]

[0152] The synthesis route of the polymer in this example is as follows:

[0153]

[0154] The specific preparation method is as follows: The preparation steps of the compound in this example are basically the same as those of M1, except that B1 in the polymer synthesis of step (2) is changed to B2 (CAS: 1373834-87-7). A purple-black solid M2 (1.25 g, 91%) was obtained, Mn = 5.6 kDa, PDI = 1.5.

[0155] Material Example 3

[0156] The structural formula of polymer M3 in this example is as follows:

[0157]

[0158] The synthesis route of the polymer in this example is as follows:

[0159]

[0160] The specific preparation method is as follows: The preparation steps of the compound in this example are basically the same as those of M1, except that B1 in the polymer synthesis of step (2) is changed to B3 (CAS: 2131164-64-0). A purple-black solid M3 (1.30 g, 92%) was obtained, Mn = 5.8 kDa, PDI = 1.6.

[0161] Material Example 4

[0162] The structural formula of polymer M4 in this example is as follows:

[0163]

[0164] The synthesis route of the polymer in this example is as follows:

[0165]

[0166] The specific preparation method is as follows: The preparation steps of the compound in this example are basically the same as those of M1, except that B1 in the polymer synthesis of step (2) is changed to B4 (CAS: 2648593-44-4). A purple-black solid M4 (1.23 g, 85%) was obtained, Mn = 4.7 kDa, PDI = 1.8.

[0167] Material Comparative Example 1

[0168] The material of this comparative example is TFB, also known as poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)], CAS: 220797-16-0.

[0169] Material Comparative Example 2

[0170] The material of this comparative example is PVK, also known as poly(N-vinylcarbazole), CAS: 25067-59-8.

[0171] Device Example 1

[0172] This device example provides a quantum dot light-emitting diode and its preparation method, which specifically includes the following steps.

[0173] Step 1: After cleaning and drying the ITO substrate (with a thickness of 100 nm), it is treated in an ultraviolet ozone cleaner for 15 min. Then, a PEDOT:PSS solution is spin-coated on the ITO substrate at a speed of 5000 rpm, and then heated at 230 °C for 15 min to obtain a hole injection layer with a thickness of 40 nm.

[0174] Step 2: The polymer M1 of Material Example 1 is dispersed in a chlorobenzene solvent to form a mixed solution with a concentration of 10 mg / ml. The mixed solution is spin-coated on the hole injection layer at a speed of 2500 rpm, and then heated at 200 °C for 30 min to obtain a hole transport layer with a thickness of 40 nm.

[0175] Step 3: A hexane solution of blue CdSe quantum dots (with a concentration of 40 mg / ml) is spin-coated on the hole transport layer at a speed of 1500 rpm, and then heated at 100 °C for 5 min to obtain a light-emitting layer with a thickness of 40 nm.

[0176] Step 4: An ethanol solution of ZnO (40 mg / ml) is spin-coated on the light-emitting layer at a speed of 3000 rpm, and then heated at 100 °C for 15 min to obtain an electron transport layer with a thickness of 20 nm;

[0177] Step 5: An Ag cathode with a thickness of 100 nm is vacuum-evaporated on the electron transport layer; then it is encapsulated to obtain a QLED device.

[0178] Device Examples 2 to 4

[0179] Device Example n is basically the same as Device Example 1, except that in Device Example n: in Step 2, the polymer prepared in Material Example n is used to prepare the hole transport layer on the hole injection layer, where n is any integer from 2 to 4. Other parameters and steps remain unchanged.

[0180] Device Comparative Example 1

[0181] This device comparative example is basically the same as Device Example 1, except that in step 2 of this device comparative example, TFB is used to prepare a hole transport layer on the hole injection layer, and other parameters and steps remain unchanged.

[0182] Device Comparative Example 2

[0183] This device comparative example is basically the same as Device Example 1, except that in step 2 of this device comparative example, PVK is used to prepare a hole transport layer on the hole injection layer, and other parameters and steps remain unchanged.

[0184] Experimental Example

[0185] (1) Using M1 to 4, TFB, and PVK as hole transport materials respectively, referring to the preparation process of each corresponding film layer in Device Example 1 above, a detection device with the following structure was constructed: ITO / PEDDOT:PSS / Polymer / QD / MoO x / Ag. Then, the hole mobility of the materials was detected using the detection device, and the results are shown in Table 1.

[0186] The hole mobility of the hole transport material was recorded by the space charge limited current (SCLC) method, which can be described by the Mott-Gurney equation: J = 9με0ε r V 2 / (8d 3 )

[0187] where J is the current density, μ is the hole mobility, ε0 is the vacuum permittivity (8.85×10 -12 F / m), ε r is the permittivity of the material (for organic semiconductors, it is usually approximately taken as 3), V is the applied bias voltage, and d is the film thickness.

[0188] Table 1

[0189] <![CDATA[Hole mobility (cm 2 V -1 s -1 )]]> M1 <![CDATA[6.8x10 -3 > M2 <![CDATA[8.9x10 -3 > M3 <![CDATA[1.1x10 -2 > M4 <![CDATA[9.5x10 -3 > TFB <![CDATA[3.6x10 -3 > PVK <![CDATA[5.2x10 -5 >

[0190] As can be seen from the above table, the polymers proposed in this application all have relatively high hole mobilities and can be used as hole transport materials.

[0191] (2) Performance tests were carried out on the quantum dot light-emitting diodes of the device examples and device comparative examples, and the test results are shown in Table 2.

[0192] (1) The test method for the external quantum efficiency EQE is as follows:

[0193] The ratio of the number of electron-hole pairs injected into the quantum dots to the number of emitted photons, in %, is an important parameter for measuring the quality of an electroluminescent device and can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0194] where ηe is the optical output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, K R is the radiation process rate, and K NR is the non-radiation process rate. Test conditions: Conducted at room temperature with an air humidity of 30 - 60%.

[0195] (2) The test method for the lifetime T95@1000nit is as follows:

[0196] The time required for the device to reduce the brightness to a certain proportion of the maximum brightness under constant current or voltage drive. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out at high brightness by accelerating the device aging and fitting the lifetime at high brightness through an extended exponential decay brightness decay fitting formula, such as: the lifetime at 1000nit is denoted as T95@1000nit. The specific calculation formula is as follows:

[0197]

[0198] where T95 L is the lifetime at low brightness, T95 H is the measured lifetime at high brightness, L H is the device accelerated to the maximum brightness, L L is 1000nit, and A is the acceleration factor. In this experiment, the value of A is obtained as 1.7 by measuring the lifetimes of several groups of red QLED devices at the rated brightness.

[0199] Table 2

[0200] T95@1000nit(h) EQE(%) Device Example 1 96 12.3 Device Example 2 103 12.8 Device Example 3 125 14.6 Device Example 4 120 13.8 Device Comparative Example 1 66 10.5 Device Comparative Example 2 35 7.8

[0201] As can be seen from the above table, each device example has a high EQE and T95@1000nit, and is superior to device comparative examples 1 and 2, indicating that the polymer proposed in this application has a high hole mobility. When used as a hole transport layer material, it helps to improve the carrier balance in the device, increase the light emission efficiency of the device, and extend the service life of the device.

[0202] The above has introduced in detail the technical solutions provided by the embodiments of the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A polymer, characterized in that, The polymer has the structure shown in formula (I): (I)： wherein, n is selected from any integer from 5 to 50; Ar1, Ar2, and Ar3 are each independently selected from a substituted or unsubstituted benzene ring, a substituted or unsubstituted single heterocycle, a substituted or unsubstituted fused aromatic ring having 10 to 30 ring atoms, and a substituted or unsubstituted fused heteroaromatic ring having 8 to 30 ring atoms; R is selected from one or a combination of more of a substituted or unsubstituted C1-C20 alkyl group and a substituted or unsubstituted aryl group having 6 to 20 ring atoms; When substituted by a substituent, each occurrence of the substituent is independently selected from one or a combination of more of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group having 6 to 20 ring atoms, and a heteroaryl group having 5 to 20 ring atoms.

2. The polymer according to claim 1, wherein, The hole mobility of the polymer ranges from 10 -2 to 10 -3 cm 2 V –1 s –1 ; and / or, Ar1 is selected from a substituted or unsubstituted fused aromatic ring having 10 to 30 ring atoms and a substituted or unsubstituted fused heteroaromatic ring having 8 to 30 ring atoms; and / or, Ar2 and Ar3 are each independently selected from a substituted or unsubstituted benzene ring and a substituted or unsubstituted fused aromatic ring having 10 to 30 ring atoms; and / or, -R · selected from the following structures: wherein, Ar4, Ar5, and Ar6 are each independently selected from a benzene ring substituted by a halogen group and a fused aromatic ring having 10 to 30 ring atoms substituted by a halogen group.

3. The polymer according to claim 2, wherein The polymer has the structure shown in formula (I-1): (I-1)： wherein, n is selected from any integer from 5 to 50; X is selected from a halogen group; R1 and R2 are each independently selected from a substituted or unsubstituted C1 to C30 alkoxy group and a substituted or unsubstituted thiophene group; When substituted by a substituent, each occurrence of the substituent is independently selected from one or a combination of more of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group having 6 to 20 ring atoms, and a heteroaryl group having 5 to 20 ring atoms.

4. The polymer according to claim 3, characterized in that, X is selected from Cl; and / or, R1 and R2 are the same; and / or, each occurrence of the substituent is independently selected from one or a combination of more of D, a halogen group, a C1-C20 alkyl group, and a C1-C20 alkoxy group; and / or, R1 and R2 are each independently selected from one of the following structures: wherein, R3 is selected from a C6-C24 alkyl group, and Y1 and Y2 are each independently selected from hydrogen or a halogen group.

5. The polymer according to claim 3, wherein The polymer includes one or more of the following structural formulas:

6. A method for preparing a polymer, characterized in that, including the following steps: Radicalize compound A to obtain intermediate m; Mix the intermediate m with a halogenating agent and react to obtain intermediate n; Mix the intermediate n with compound B and react to obtain polymer M; wherein, the structural formulas of the compound A, intermediate m, intermediate n, compound B, and polymer M are as follows: wherein, Z is selected from a halogen group, and n is selected from any integer from 5 to 50; Ar1, Ar2, and Ar3 are each independently selected from any one of a substituted or unsubstituted benzene ring, a substituted or unsubstituted single heterocycle, a substituted or unsubstituted fused aromatic ring having 10 to 30 ring atoms, and a substituted or unsubstituted fused heteroaromatic ring having 8 to 30 ring atoms; R is selected from one or more combinations of a substituted or unsubstituted C1-C20 alkyl group and a substituted or unsubstituted aryl group having 6 to 20 ring atoms; when substituted by a substituent, each occurrence of the substituent is independently selected from one or more combinations of D, a halogen group, a nitro group, an amino group, a mercapto group, a hydroxyl group, a carboxyl group, a sulfonic acid group, a cyano group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylcarbonyl group, a C1-C20 alkoxycarbonyl group, an aryl group having 6 to 20 ring atoms, and a heteroaryl group having 5 to 20 ring atoms.

7. The preparation method according to claim 6, characterized in that, The halogenating agent includes one or more of liquid bromine and N-bromosuccinimide; and / or, The molar ratio of the intermediate n to the compound B is 1:(0.8 - 1.2); and / or, When the compound A includes the compound A-1, the steps of radicalizing the compound A to obtain the intermediate m, mixing the intermediate m with the halogenating agent, and reacting to obtain the intermediate m-1 include: Mixing the compound C and trihalomethane, performing a first reaction to obtain the intermediate a; mixing the intermediate a and tetrachlorobenzoquinone, performing a second reaction to obtain the intermediate b; mixing the intermediate b and carbazole, performing a third reaction to obtain the compound A-1; mixing the compound A-1 and tetrachlorobenzoquinone, performing a fourth reaction to obtain the intermediate m-1; mixing the intermediate m-1 and the halogenating agent, performing a fifth reaction to obtain the intermediate n-1; wherein, the structural formulas of the compound A-1, the compound C, the intermediate a, the intermediate b, the intermediate m-1, and the intermediate n-1 are as follows: Wherein, X and Y are each independently selected from halogen groups.

8. The preparation method according to claim 7, characterized in that, The temperature of the first reaction is 70°C to 90°C; and / or, The time of the first reaction is 2 to 5 h; and / or, The molar ratio of trihalomethane to the compound C is 1:(7 - 10); and / or, The molar ratio of the intermediate a to tetrachlorobenzoquinone is 1:(2 - 4); and / or, The temperature of the second reaction is 20 to 40°C; and / or, The time of the second reaction is 1 to 3 h; and / or, The molar ratio of the intermediate b to carbazole is 1:(4 - 7); and / or, The temperature of the third reaction is 150 to 170°C; and / or, The time of the third reaction is 2 to 4 h; and / or, The molar ratio of the compound A-1 to tetrachlorobenzoquinone is 1:(2 - 4); and / or, The temperature of the fourth reaction is 20 to 40°C; and / or, The time of the fourth reaction is 1 to 3 h; and / or, The molar ratio of the intermediate m-1 to the halogenating agent is 1:(2 - 4); and / or, The fifth reaction is a reflux reaction; and / or, The time of the fifth reaction is 5 to 15 h.

9. A composition, characterized in that, It includes a polymer and a solvent. The polymer includes the polymer described in any one of claims 1 to 5, or includes the polymer prepared by the preparation method described in any one of claims 6 to 8.

10. The composition according to claim 9, wherein In the composition, the concentration of the polymer is 5 to 15 mg / ml; and / or, The solvent includes one or more of toluene, chlorobenzene, dichlorobenzene, chloroform, tetralin, and chloronaphthalene; and / or, The composition further includes a first compound. The first compound includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, tris(3-methylphenylphenylamino)-triphenylamine, poly(p-phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbiphenylamine, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with derivatives of s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, etc.

11. An optoelectronic device, characterized in that, It includes an anode, a hole functional layer, and a cathode. The material of the hole functional layer includes the polymer described in any one of claims 1 to 5, or includes the polymer prepared by the preparation method described in any one of claims 6 to 8, or the hole functional layer is made of the composition described in claim 9 or 10.

12. The optoelectronic device according to claim 11, wherein The anode and the cathode are each independently selected from a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, Ga:SnO2; the material of the composite electrode is selected from one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS; and / or, The optoelectronic device includes a light-emitting layer disposed between the cathode and the hole functional layer, and the material of the light-emitting layer is selected from organic light-emitting materials or quantum dot light-emitting materials; the organic light-emitting materials are selected from at least one of diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials emitting blue light, TTPA fluorescent materials emitting green light, TBRb fluorescent materials emitting orange light, and DBP fluorescent materials emitting red light; the quantum dot light-emitting materials are selected from at least one of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials, the single-structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and the I-III-VI group compounds are selected from at least one of CuInS, CuInSe, and AgInS;The core of the quantum dots with a core-shell structure is selected from any one of the above single-structure quantum dots. The shell layer of the quantum dots with a core-shell structure includes one or more layers. The shell layer material of the quantum dots with a core-shell structure is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu 2+ at least one of them, and X is a halogen anion selected from - Cl - Br - I n-2 NH3 + or [NH3(CH2) n NH3] 2+ where n≥2, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu 2+ at least one of them, and X is a halogen anion selected from - Cl - Br - I at least one of them.

13. A display device, characterized in that, comprising the optoelectronic device according to claim 11 or 12.

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