A vertical cavity surface emitting laser and a manufacturing method thereof

Abstract

The present application discloses a vertical cavity surface emitting laser and a manufacturing method thereof, which can be used in the field of semiconductor devices. The laser includes: a substrate, an epitaxial structure and a mode control structure; the epitaxial structure includes a first-type reflector layer, an active layer, an optoelectronic confinement layer and a second-type reflector layer sequentially arranged on the substrate; the optoelectronic confinement layer is used to limit the light-emitting aperture of the vertical cavity surface emitting laser; the mode control structure is arranged on the first-type reflector layer and / or the second-type reflector layer, and at least part of the structure is electrically in contact with the first-type reflector layer and / or the second-type reflector layer. The mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture to the first-type reflector layer and / or the second-type reflector layer, so that the vertical cavity surface emitting laser does not emit or emits less laser light at a preset point of the light-emitting aperture. In this way, the laser lasing state is controlled by the mode control structure, thereby improving the reliability of the laser chip.

Description

Technical Field

[0001] The present application relates to the field of semiconductor devices, and in particular to a vertical cavity surface emitting laser and a manufacturing method thereof. Background Art

[0002] Vertical-Cavity Surface-Emitting Laser (VCSEL) is a unique semiconductor laser that has shown great potential in consumer electronics, communications and emerging fields due to its unique vertical structure, high performance and low cost.

[0003] Existing VCSELs typically consist of P-type and N-type reflectors, a single circular or square mesa or multiple channels, and an oxide confinement layer formed inward from the mesa sidewalls using wet oxidation. This VCSEL structure suffers from high free-carrier absorption within the P-type ohmic contact and current diffusion layer, as well as uncontrolled current injection caused by the low mobility of the P-type semiconductor, leading to unreliable VCSEL chips.

[0004] Therefore, how to improve the reliability of vertical cavity surface emitting laser chips is an urgent problem that those skilled in the art need to solve. Summary of the Invention

[0005] Based on the above problems, the present application provides a vertical cavity surface emitting laser and a manufacturing method thereof, which controls the laser lasing state through a mode control structure and improves the reliability of the laser chip.

[0006] In a first aspect, an embodiment of the present application provides a vertical cavity surface emitting laser, comprising: a substrate, an epitaxial structure, and a mode control structure; the epitaxial structure comprises a first-type reflector layer, an active layer, an optoelectronic confinement layer, and a second-type reflector layer sequentially disposed on the substrate; the optoelectronic confinement layer is used to define the light-emitting aperture of the vertical cavity surface emitting laser;

[0007] The mode control structure is arranged on the first type reflector layer and / or the second type reflector layer, and at least part of the structure is electrically contacted with the first type reflector layer and / or the second type reflector layer. The mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture into the first type reflector layer and / or the second type reflector layer, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset point of the light-emitting aperture.

[0008] Optionally, the preset point is a position where a current exceeding a preset threshold value is applied to the vertical cavity surface emitting laser to generate a high-order mode laser; and / or

[0009] The preset threshold current is greater than or equal to 6 mA.

[0010] Optionally, the light-emitting aperture includes any one of an elliptical shape, a diamond shape and a spindle shape.

[0011] Optionally, the mode control structure includes an ohmic contact metal, and the ohmic contact metal is in electrical contact with the first-type reflector layer and / or the second-type reflector layer;

[0012] The ohmic contact metal is discontinuous at the preset point or does not provide pump source injection.

[0013] Optionally, when the ohmic contact metal is discontinuous at the preset point, the ohmic contact metal includes at least two metal parts, and each of the metal parts is evenly distributed along the light-emitting aperture.

[0014] Optionally, the light-emitting aperture is elliptical, and the ohmic contact metal includes two metal parts, which are respectively arranged on both sides of the short axis of the ellipse.

[0015] Optionally, when the ohmic contact metal does not provide pump source injection at the preset point, the vertical cavity surface emitting laser further includes an insulating layer provided between the ohmic contact metal and the epitaxial structure;

[0016] The insulating layer is correspondingly provided at the preset point; and / or

[0017] The insulating layer is formed by deposition or ion implantation.

[0018] In a second aspect, an embodiment of the present application provides a method for manufacturing a vertical cavity surface emitting laser, which is used to manufacture the vertical cavity surface emitting laser, comprising:

[0019] providing a substrate;

[0020] forming a first-type reflector layer, an active layer, a photoelectric confinement layer, and a second-type reflector layer on the substrate in sequence to obtain an epitaxial structure;

[0021] A mode control structure is fabricated on the first type reflector layer and / or the second type reflector layer, wherein at least a portion of the mode control structure is in electrical contact with the first type reflector layer and / or the second type reflector layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture into the first type reflector layer and / or the second type reflector layer, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset point of the light-emitting aperture.

[0022] In a third aspect, an embodiment of the present application provides an optical module comprising the vertical cavity surface emitting laser as described above.

[0023] In a fourth aspect, an embodiment of the present application provides an optical chip on which the vertical cavity surface emitting laser as described above is integrated.

[0024] It can be seen from the above technical solutions that compared with the existing technology, this application has the following advantages:

[0025] The present application provides a vertical cavity surface emitting laser (VCSEL) comprising: a substrate, an epitaxial structure, and a mode control structure; the epitaxial structure comprises a first-type reflector layer, an active layer, an optoelectronic confinement layer, and a second-type reflector layer sequentially arranged on the substrate; the optoelectronic confinement layer is used to define the light-emitting aperture of the VCSEL; the mode control structure is arranged on the first-type reflector layer and / or the second-type reflector layer, and at least part of the structure is in electrical contact with the first-type reflector layer and / or the second-type reflector layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture into the first-type reflector layer and / or the second-type reflector layer, so that the VCSEL does not emit or emits less laser light at a preset point of the light-emitting aperture. In this way, the laser lasing state is controlled by the mode control structure, thereby improving the reliability of the laser chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0027] Figure 1 A schematic structural diagram of a vertical cavity surface emitting laser provided in an embodiment of the present application;

[0028] Figure 2 A top view of a mode control structure provided in an embodiment of the present application;

[0029] Figure 3 A cross-sectional schematic diagram of a mode control structure provided in an embodiment of the present application;

[0030] Figure 4 A top view of an ohmic contact metal provided in an embodiment of the present application;

[0031] Figure 5 A top view of an N-type electrode layer provided in an embodiment of the present application;

[0032] Figure 6 A schematic structural diagram of an insulating layer provided in an embodiment of the present application;

[0033] Figure 7This is a flow chart of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application. DETAILED DESCRIPTION

[0034] As mentioned above, existing VCSEL structures have the problem of low reliability. Specifically, conventional VCSELs are generally composed of P-type and N-type reflectors, a single-layer circular or square mesa or multiple channels, and an oxide confinement layer formed inward from the sidewalls of the mesa using wet oxidation. VCSELs with this structure have high free carrier absorption in the P-type ohmic contact and current diffusion layer, as well as uncontrolled current injection caused by the low mobility of the P-type semiconductor. These factors limit the mode selection, polarization control, and thermal optimization of the laser lasing, leading to unreliable VCSEL chips.

[0035] To solve the above problems, an embodiment of the present application provides a vertical cavity surface emitting laser and a manufacturing method thereof, wherein the vertical cavity surface emitting laser includes: a substrate, an epitaxial structure and a mode control structure; the epitaxial structure includes a first-type reflector layer, an active layer, a photoelectric limiting layer and a second-type reflector layer sequentially arranged on the substrate; the photoelectric limiting layer is used to limit the light-emitting aperture of the vertical cavity surface emitting laser; the mode control structure is arranged on the first-type reflector layer and / or the second-type reflector layer, and at least part of the structure is electrically contacted with the first-type reflector layer and / or the second-type reflector layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture into the first-type reflector layer and / or the second-type reflector layer, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset point of the light-emitting aperture.

[0036] In this way, the laser lasing state is controlled by the mode control structure, thereby improving the reliability of the laser chip.

[0037] It should be noted that the VCSEL and its manufacturing method provided in this application can be applied to the field of semiconductor devices. The above is only an example and does not limit the application field of the VCSEL and its manufacturing method provided in this application.

[0038] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0039] Figure 1 A schematic diagram of the structure of a vertical cavity surface emitting laser provided in an embodiment of the present application. Figure 1 As shown, the vertical cavity surface emitting laser includes: a substrate 600, an epitaxial structure and a mode control structure 100; the epitaxial structure includes a first type reflector layer 500, an active layer 400, an optoelectronic confinement layer 300 and a second type reflector layer 200 sequentially arranged on the substrate 600; the optoelectronic confinement layer 300 is used to limit the light-emitting aperture of the vertical cavity surface emitting laser;

[0040] The mode control structure 100 is arranged on the first-type reflector layer 500 and / or the second-type reflector layer 200, and at least part of the structure is electrically contacted with the first-type reflector layer 500 and / or the second-type reflector layer 200. The mode control structure 100 is configured to introduce a pump source related to the shape of the light-emitting aperture into the first-type reflector layer 500 and / or the second-type reflector layer 200, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset point of the light-emitting aperture.

[0041] Specifically, the epitaxial structure provided in the embodiment of the present application mainly includes an N-type distributed Bragg reflector (DBR) layer, that is, a first-type reflector layer 500, an active layer 400 composed of a multiple quantum well (MQW) layer and a cladding layer, an Al 0.98 Ga 0.02 As photoelectric confinement layer 300 and P-type DBR layer (second type reflector layer 200 ). Figure 2 A top view of a mode control structure provided in an embodiment of the present application. Figure 2As shown, the mode control structure 100 is configured to introduce a pump source related to the shape of the light-emitting aperture into the reflector layer, thereby causing no lasing or less lasing at a preset point of the light-emitting aperture. The preset point is the position where a current exceeding a preset threshold current is applied to the vertical cavity surface emitting laser to generate a high-order mode laser. Generally, the preset threshold current is greater than or equal to 6 mA. For example, the preset threshold current may be 6 mA, or the preset threshold current may be 7 mA, or the preset threshold current may be 8 mA. It is understandable that if the mode control structure 100 is the same as the prior art and only adopts a circular ring or elliptical ring design concentric with the light-emitting aperture, it is impossible to control the introduction of the pump source, and thus it is impossible to cause the vertical cavity surface emitting laser to not emit or emit less laser at the preset point of the light-emitting aperture. To this end, the present embodiment provides a mode control structure 100. Through layout design, a pump source injection control structure is formed on the surface of the second-type reflector layer 200. Injecting carriers (holes) into the device from this mode control structure 100 can achieve controlled carrier injection and recombination in a plane perpendicular to the laser propagation direction, forming spontaneous radiation. This allows the vertical cavity surface emitting laser to not or only emit less laser light at a predetermined point in the light-emitting aperture, and after reaching a threshold, stimulated radiation is generated. A channel 800 is used to oxidize a portion of the second-type reflector layer 200 to form the photoelectric confinement layer 300. Furthermore, an N-type electrode layer 700 is provided on the substrate 600 on the same side as the first-type reflector layer 500, corresponding to the mode control structure 100, and similarly achieves control over the introduction of the pump source through layout design.

[0042] Figure 3 A cross-sectional schematic diagram of a mode control structure provided in an embodiment of the present application. Figure 4 A top view of an ohmic contact metal provided in an embodiment of the present application. Figure 3 and Figure 4 As shown, the mode control structure 100 includes an ohmic contact metal, and the ohmic contact metal is in electrical contact with the first-type reflector layer 500 and / or the second-type reflector layer 200;

[0043] The ohmic contact metal is discontinuous at the preset point or does not provide pump source injection.

[0044] Specifically, the ohmic contact metal refers to a segmented P-type electrode layer 120. On this basis, the vertical cavity surface emitting laser may further include a P-type electrode metal 110. The segmented P-type electrode layer 120 is disposed on the surface of the second-type reflector layer 200. The P-type electrode metal 110 fills the trench 800 and connects to the segmented P-type electrode layer 120 via an ohmic contact through-hole. Pump source injection is discontinuous or not provided at predetermined points. Furthermore, the embodiment of the present application further adds a P-type pad 130, which can be connected to the segmented P-type electrode layer 120 via the P-type electrode metal 110. This design, on the one hand, enables the segmented P-type electrode layer 120 to achieve uniform current redistribution and low free carrier absorption under a balanced high conductivity (low series resistance), thereby achieving effective selection and control of high-order mode lasing modes and polarization states. On the other hand, the P-type pad 130, i.e., the P-type contact electrode, can be used as an inlet for electrode injection, thereby reducing contact resistance, reducing Joule heat loss, and improving electro-optical conversion efficiency.

[0045] As an implementation method, regarding how to design the ohmic contact metal, when the ohmic contact metal is discontinuous at the preset point, the ohmic contact metal includes at least two metal parts, and each of the metal parts is evenly distributed along the light-emitting aperture.

[0046] Specifically, the segmented P-type electrode layer 120 provided in the embodiment of the present application can be a ring-shaped or notched ring-shaped P-type electrode that is interrupted to form two or more segments of electrodes (that is, two or more segments of P-electrode ohmic contact areas are set, and the width and azimuth angle of each segment of the electrode are adjustable depending on the device performance). In this way, the control of the laser lasing state can be achieved. It can be understood that the segmented P-type electrode layer 120 can also be designed in other shapes or other numbers of segments, that is, if you want the light intensity in a certain direction to be higher, you can retain the electrode in that direction. Generally, the retained electrode portion is evenly distributed along the light-emitting aperture. In summary, the design of the segmented P-type electrode layer 120 provided in the embodiment of the present application takes into account the incidental benefits of minimizing parasitic capacitance and resistance, improving device bandwidth, and reducing relative intensity noise (RIN).

[0047] In addition, the light emitting aperture may specifically include any one of an elliptical shape, a diamond shape, and a spindle shape.

[0048] As an embodiment, when the light-emitting aperture is elliptical, the ohmic contact metal includes two metal sections, and the two metal sections are respectively arranged on both sides of the short axis of the ellipse.

[0049] Specifically, in order to increase the bandwidth, it is possible to use methods such as reducing the oxidation aperture, non-circular oxidation aperture, and using a photoelectric confinement layer 300 with a gradient thickness. The embodiment of the present application provides an elliptical light-emitting aperture.0.98 Ga 0.02 As is partially oxidized on the photoelectric confinement layer 300. Figure 4 As shown, the segmented P-type electrode layer 120 in the ohmic contact metal can be configured as a two-segment electrode, one positioned on either side of the minor axis of the elliptical light-emitting aperture. Because the distribution of the spontaneous emission intensity under high current injection in a plane perpendicular to the laser emission direction has the most direct impact on the location and mode distribution of stimulated emission, the mode control structure 100, combined with the anisotropy of the elliptical light-emitting aperture and other polarization control methods such as surface microstructure gratings, ultimately achieves stimulated emission mode selection and polarization control.

[0050] As an embodiment, regarding how to design the channel 800, the channel 800 is designed as a broken ring, including at least four segments. In this specific embodiment, the channel 800 has four segments, and the four segments are evenly distributed. The four evenly distributed segments can form a nearly elliptical light-emitting aperture during wet oxidation. It is understood that in other embodiments, when a light-emitting aperture of a corresponding shape is required, the number and location of the channels 800 can also be selected and adjusted, and this application is not limited to this.

[0051] Furthermore, to improve the heat dissipation performance of the device, an insulating layer (not shown) may be first filled on the surface of the trench 800 and then filled with metal material.

[0052] Figure 5 A top view of an N-type electrode layer provided in an embodiment of the present application. Figure 5 As shown, the N-type electrode layer 700 is C-shaped.

[0053] Specifically, the design concept of the mode control structure 100 can also be applied to the N-type electrode layer 700. The embodiment of the present application provides a design of an N-type electrode layer 700, which is C-shaped when viewed from above. Like the P-electrode design, the C-shaped N-type electrode layer 700 can reduce parasitic capacitance and resistance, improve device bandwidth, and reduce the incidental benefits of RIN.

[0054] As an embodiment, with respect to how to control the pump source injection, when the ohmic contact metal does not provide the pump source injection at the preset point, the vertical cavity surface emitting laser further includes an insulating layer provided between the ohmic contact metal and the epitaxial structure;

[0055] The insulating layer is correspondingly provided at the preset point; and / or

[0056] The insulating layer is formed by deposition or ion implantation.

[0057] Specifically, Figure 6 A schematic diagram of the structure of an insulating layer provided in an embodiment of the present application. Figure 6 As shown, an insulating layer 900 such as SiN or SiO2 can be selectively laid at a preset point under the annular P electrode and the C-shaped N electrode by deposition, thereby further improving the current injection effect and achieving the purpose of controlling the laser lasing state, thereby improving the carrier injection recombination efficiency, slope efficiency, bandwidth and reliability of the vertical cavity surface emitting laser. In addition, in order to achieve control of the laser lasing state and improve the carrier injection recombination efficiency, slope efficiency, bandwidth and reliability of the vertical cavity surface emitting laser. It is also possible to selectively destroy the side wall of the channel 800 and the semiconductor material under the electrode at a preset point by O2 plasma injection, making it an insulating material, thereby forming an insulating layer and changing the current injection channel.

[0058] In summary, the present application provides a vertical cavity surface emitting laser comprising: a substrate, an epitaxial structure and a mode control structure; the epitaxial structure comprises a first type reflector layer, an active layer, an optoelectronic confinement layer and a second type reflector layer sequentially arranged on the substrate; the optoelectronic confinement layer is used to limit the light-emitting aperture of the vertical cavity surface emitting laser; the mode control structure is arranged on the first type reflector layer and / or the second type reflector layer, and at least part of the structure is in electrical contact with the first type reflector layer and / or the second type reflector layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture into the first type reflector layer and / or the second type reflector layer, so that the vertical cavity surface emitting laser does not laser or emits less laser at a preset point of the light-emitting aperture. In this way, the laser lasing state is controlled by the mode control structure, thereby improving the reliability of the laser chip.

[0059] Figure 7 A flow chart of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application. Figure 7 As shown, the method includes:

[0060] S1: providing a substrate, and sequentially forming a first-type reflector layer, an active layer, a photoelectric confinement layer, and a second-type reflector layer on the substrate to obtain an epitaxial structure.

[0061] In practical applications, an epitaxial structure is first constructed, and the N-type DBR layer (first type reflector layer), the active layer composed of the multi-quantum well MQW layer and the cladding layer, the Al 0.98 Ga 0.02 As photoelectric confinement layer and P-type DBR layer (second type reflector layer). 0.98 Ga 0.02 The As photoelectric confinement layer is arranged in the multilayer structure of the P-type DBR layer.

[0062] S2: A mode control structure is fabricated on the first type reflector layer and / or the second type reflector layer, wherein at least a portion of the mode control structure is in electrical contact with the first type reflector layer and / or the second type reflector layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture into the first type reflector layer and / or the second type reflector layer, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset point of the light-emitting aperture.

[0063] Specifically, an embodiment of the present application provides a possible process for producing a mode control structure, as shown in S201-S204.

[0064] S201: etching the epitaxial structure to obtain a channel; the channel penetrates the second-type reflector layer, the active layer, and the photoelectric confinement layer, and the bottom of the channel stays inside the first-type reflector layer.

[0065] In practical applications, the channel shape is first photolithographically carved on the surface of the P-type DBR layer, and then reactive ion etching (RIE) is performed on it. The etching process needs to penetrate the P-type DBR layer and the active layer from top to bottom, and stop at the multi-layer structure of the N-type DBR layer.

[0066] S202: Partially oxidize the high aluminum component layer (Al 0.98 Ga 0.02 As), forming a photoelectric confinement layer, and defining a non-circular light-emitting aperture through the photoelectric confinement layer.

[0067] In practical applications, based on wet oxidation, a mixed gas of N2 and water vapor can be used in a high-temperature cavity to oxidize the high-aluminum component layer in the P-type DBR layer into g-Al2O3 and form a non-circular light-emitting aperture.

[0068] S203: forming a segmented P-type electrode layer on the second-type reflector layer.

[0069] In practical applications, before generating the segmented P-type electrode layer, an insulating layer passivation can be first deposited on the surface of the P-type DBR layer and the inner surface of the channel by atomic layer deposition of Al2O3 or plasma-enhanced chemical vapor deposition of SiN / SiO2. Then, the target position area of ​​the segmented P-type electrode layer is patterned by photolithography and the passivation layer opening is etched. Furthermore, the segmented P-type electrode layer is formed by evaporation / sputtering and stripping, and finally, an insulating layer passivation is further deposited on the chip surface and the inner surface of the channel by plasma-enhanced chemical vapor deposition of SiN / SiO2.

[0070] S204: Filling the trench with a P-type electrode metal and forming an ohmic contact with the segmented P-type electrode layer; and forming a P-type pad on the P-type electrode metal.

[0071] In practical applications, the segmented P-type electrode layer first needs to be photolithographically opened and etched to prepare for subsequent ohmic contact with the P-type electrode metal. After etching, the P-type electrode metal is photolithographically processed. Then, through deposition (evaporation / sputtering) and electroplating, the P-type electrode metal is formed on the channel and the surface of the P-type DBR layer, achieving ohmic contact between the segmented P-type electrode layer and the P-type electrode metal. After this, Al2O3 atomic layer deposition is continued on the surface of the P-type DBR layer to form a passivation layer. Finally, the P-type pad is formed through photolithography and etching. The P-type pad serves as the inlet for electrode injection, which can reduce contact resistance, reduce Joule heat loss, and improve electro-optical conversion efficiency.

[0072] S3: forming an N-type electrode layer on the substrate layer, and forming an N-type pad on the N-type electrode layer.

[0073] In practical applications, the mesa is first fabricated, formed by photolithography and etching onto the N-GaAs substrate. The N-electrode pattern is then photolithographically patterned on the N-GaAs substrate. A C-shaped N-type electrode layer is then formed through deposition (evaporation / sputtering) and electroplating, followed by annealing to form an ohmic contact alloy. Furthermore, to reduce contact resistance, minimize Joule heat loss, and improve electro-optical conversion efficiency, an N-type pad can also be placed on the N-type electrode layer through photolithography and etching.

[0074] In summary, the present invention provides a method for manufacturing a vertical cavity surface emitting laser, comprising: providing a substrate; sequentially forming a first-type reflector layer, an active layer, a photoelectric confinement layer, and a second-type reflector layer on the substrate to obtain an epitaxial structure; etching the epitaxial structure to obtain a channel; the channel penetrates the second-type reflector layer, the active layer, and the photoelectric confinement layer, and the bottom of the channel remains inside the first-type reflector layer; partially oxidizing the photoelectric confinement layer to form a non-circular light-emitting aperture; forming a segmented P-type electrode layer on the second-type reflector layer; filling the channel with a P-type electrode metal and forming an ohmic contact with the segmented P-type electrode layer; forming a P-type pad on the P-type electrode metal; forming an N-type electrode layer on the substrate, and forming an N-type pad on the N-type electrode layer. In this way, the laser lasing state is controlled by the mode control structure, thereby improving the reliability of the laser chip.

[0075] In addition, an embodiment of the present application provides an optical module, which includes the vertical cavity surface emitting laser as described above.

[0076] In addition, an embodiment of the present application provides an optical chip on which the vertical cavity surface emitting laser as described above is integrated.

[0077] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vertical cavity surface emitting laser, characterized in that: include: A substrate, an epitaxial structure and a mode control structure; the epitaxial structure comprises a first-type reflector layer, an active layer, a photoelectric confinement layer and a second-type reflector layer sequentially arranged on the substrate; the photoelectric confinement layer is used to limit the light-emitting aperture of the vertical cavity surface emitting laser; The mode control structure is arranged on the first type reflector layer and / or the second type reflector layer, and at least part of the structure is in electrical contact with the first type reflector layer and / or the second type reflector layer. The mode control structure is configured to introduce a pump source into the first type reflector layer and / or the second type reflector layer so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset point of the light-emitting aperture.

2. The vertical cavity surface emitting laser according to claim 1, wherein: The preset point is a position where a current exceeding a preset threshold value is applied to the vertical cavity surface emitting laser to generate high-order mode laser.

3. The vertical cavity surface emitting laser according to claim 2, characterized in that: The preset threshold current is greater than or equal to 6 mA.

4. The vertical cavity surface emitting laser according to claim 3, wherein: The light emitting aperture includes any one of an elliptical shape, a diamond shape, and a spindle shape.

5. The vertical cavity surface emitting laser according to claim 4, characterized in that: The mode control structure includes an ohmic contact metal, wherein the ohmic contact metal is in electrical contact with the first-type reflector layer and / or the second-type reflector layer; The ohmic contact metal is discontinuous at the preset point or does not provide pump source injection.

6. The vertical cavity surface emitting laser according to claim 5, characterized in that: When the ohmic contact metal is discontinuous at the preset point, the ohmic contact metal includes at least two metal parts, and each of the metal parts is evenly distributed along the light-emitting aperture.

7. The vertical cavity surface emitting laser according to claim 6, characterized in that The light-emitting aperture is elliptical, and the ohmic contact metal includes two metal parts, which are respectively arranged on both sides of the short axis of the ellipse.

8. The vertical cavity surface emitting laser according to claim 5, characterized in that When the ohmic contact metal does not provide pump source injection at the preset point, the vertical cavity surface emitting laser further includes an insulating layer provided between the ohmic contact metal and the epitaxial structure; The insulating layer is correspondingly provided at the preset point; and / or The insulating layer is formed by deposition or ion implantation.

9. A method for manufacturing a vertical cavity surface emitting laser, characterized in that: For manufacturing the vertical cavity surface emitting laser according to claim 1, the method comprises: providing a substrate; forming a first-type reflector layer, an active layer, a photoelectric confinement layer, and a second-type reflector layer on the substrate in sequence to obtain an epitaxial structure; A mode control structure is fabricated on the first type reflector layer and / or the second type reflector layer, wherein at least a portion of the mode control structure is in electrical contact with the first type reflector layer and / or the second type reflector layer, and the mode control structure is configured to introduce a pump source into the first type reflector layer and / or the second type reflector layer so that the vertical cavity surface emitting laser does not emit or emits less laser light at a preset point of the light-emitting aperture.

10. An optical module, characterized in that: The vertical cavity surface emitting laser comprises the vertical cavity surface emitting laser according to any one of claims 1 to 8.

11. An optical chip, characterized in that: The optical chip is integrated with the vertical cavity surface emitting laser according to any one of claims 1 to 8.

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