Laser, photoelectric conversion module, communication system and radar

Abstract

The embodiment of the invention provides a laser, a photoelectric conversion module, a communication system and a radar, which can effectively reduce the packaging size of the laser and improve the packaging integration level of the laser. The laser comprises a substrate, N emission units and a deflection unit, N is any integer not less than 2, the N emission units are located on a first surface of the substrate, and the N emission units at least comprise a first emission unit and a second emission unit which are connected with each other, the first transmitting unit is used for transmitting a first optical signal to the deflection unit, the second transmitting unit is used for transmitting a second optical signal to the deflection unit, and the wavelength of the first optical signal is different from that of the second optical signal; and the deflection unit is used for deflecting the first optical signal and the second optical signal to a light outlet of the laser.

Description

Technical Field

[0001] This application relates to the field of optical communication technologies, and particularly to a laser, an optoelectronic conversion module, a communication system, and a radar. Background Art

[0002] The passive optical network (PON) is gradually upgraded from the gigabit-capable passive optical network (GPON) to a network with a higher speed. Therefore, the optoelectronic conversion module is required to be compatible with services of multiple rates. For example, the optoelectronic conversion module needs to be compatible with 10GPON and 50GPON.

[0003] The existing optical communication devices include a device board and an optoelectronic conversion module connected to the device board. The optoelectronic conversion module includes a plurality of transistor outlines (TOs). Different TOs emit optical signals with different wavelengths. The optoelectronic conversion module further includes a multiplexing module, which is configured to multiplex the optical signals from the plurality of TOs to emit the multiplexed optical signal.

[0004] The plurality of TOs and the multiplexing module included in the optoelectronic conversion module result in a relatively large device size. If the optoelectronic conversion module needs to emit optical signals of more wavelengths, it will occupy a larger area on the device board, thereby increasing the size of the device board. Summary of the Invention

[0005] Embodiments of this application provide a laser, an optoelectronic conversion module, a communication system, and a radar, which can effectively reduce the size of the laser package and improve the integration degree of the laser package.

[0006] In a first aspect, an embodiment of this application provides a laser, including a substrate, N emission units, and a deflection unit, where N is any integer not less than 2. The N emission units are located on a first surface of the substrate. The N emission units at least include a first emission unit and a second emission unit that are connected to each other. The first emission unit is configured to transmit a first optical signal to the deflection unit, and the second emission unit is configured to transmit a second optical signal to the deflection unit. The wavelength of the first optical signal is different from the wavelength of the second optical signal. The deflection unit is configured to deflect the first optical signal and the second optical signal to an optical output port of the laser.

[0007] Using the laser shown in this aspect, the laser is packaged in the form of a single chip, that is, the N emission units included in the chip are all arranged on the first surface of the same substrate. By electrically controlling the single chip, the emission of multiple wavelengths can be directly achieved. For example, drive currents are respectively applied to the first emission unit and the second emission unit, so that the single chip emits two wavelengths, namely the first optical signal and the second optical signal. Since the single chip can emit multiple wavelengths, the integration degree of the laser is improved. Moreover, the laser packaged in a single chip can emit multiple wavelengths, reducing the device size of the laser package in the case of emitting multiple wavelengths. If the laser needs to emit more optical signals of different wavelengths, the area occupied by the laser package on the device single board is effectively suppressed.

[0008] Based on the first aspect, in an optional implementation manner, the first emission unit and the second emission unit are arranged side by side on the first surface of the substrate, and the first emission unit is connected between the second emission unit and the deflection unit. The first emission unit includes a first gain medium, and the second emission unit includes a second gain medium. The first emission unit is configured to emit the first optical signal according to the optical signal emitted by the first gain medium, and the second emission unit is configured to emit the second optical signal according to the optical signal emitted by the second gain medium. Moreover, the second optical signal emitted from the second emission unit passes through the first gain medium to be transmitted to the deflection unit.

[0009] Adopting this implementation manner, the second optical signal emitted by the second emission unit passes through the first emission unit to be transmitted to the deflection unit, ensuring that the deflection unit can deflect the first optical signal and the second optical signal to the light output port of the laser, improving the integration degree and reliability of the laser.

[0010] Based on the first aspect, in an optional implementation manner, the first emission unit further includes a first filter located on the first surface of the substrate, and the second emission unit further includes a second filter located on the first surface of the substrate. The first filter is configured to filter the optical signal emitted by the first gain medium to obtain the first optical signal, and the second filter is configured to filter the optical signal emitted by the second gain medium to obtain the second optical signal.

[0011] Adopting this implementation manner, the laser realizes the filtering function of the laser through the first filter and the second filter, ensuring the stability of the laser light output and improving the reliability of the laser light output.

[0012] Based on the first aspect, in an optional implementation, the first emission unit further includes a first optical resonator located on the first surface of the substrate, and the second emission unit further includes a second optical resonator located on the first surface of the substrate. The first gain medium and the first filter are located in the first optical resonator, and the second gain medium and the second filter are located in the second optical resonator. The first optical resonator is configured to perform laser resonance on the optical signal emitted by the first gain medium to emit the first optical signal, and the second optical resonator is configured to perform laser resonance on the optical signal emitted by the second gain medium to emit the second optical signal.

[0013] With this implementation, the laser realizes the laser resonance function through the first optical resonator and the second optical resonator, ensuring the stability of the laser output and improving the reliability of the laser output.

[0014] Based on the first aspect, in an optional implementation, the second optical signal transmits out of the second optical resonator and passes through the first optical resonator to be transmitted to the deflection unit, and the first optical signal transmits out of the first optical resonator to be transmitted to the deflection unit.

[0015] With this implementation, the second optical signal emitted by the second optical resonator passes through the first optical resonator to be transmitted to the deflection unit, ensuring that the deflection unit can deflect the first optical signal and the second optical signal to the light output port of the laser, improving the integration and reliability of the laser.

[0016] Based on the first aspect, in an optional implementation, the first optical resonator includes a first reflective layer and a second reflective layer located on the first surface of the substrate, and the second optical resonator includes a third reflective layer and a fourth reflective layer located on the first surface of the substrate. The second reflective layer and the third reflective layer are connected to each other. The second optical signal transmits through the third reflective layer to enter the first optical resonator, and the second optical signal passing through the first optical resonator transmits out through the first reflective layer; the first optical signal transmits out through the first reflective layer.

[0017] With this implementation, the second optical signal emitted by the second optical resonator passes through the first optical resonator to be transmitted to the deflection unit, ensuring that the deflection unit can deflect the first optical signal and the second optical signal to the light output port of the laser, improving the integration and reliability of the laser.

[0018] Based on the first aspect, in an optional implementation, the wavelength of the second optical signal is greater than the wavelength of the first optical signal.

[0019] With this implementation mode, when the wavelength of the second optical signal is greater than that of the first optical signal, the optical absorption loss of the laser is effectively reduced.

[0020] Based on the first aspect, in an alternative implementation mode, the first emission unit is connected between the second emission unit and the first surface of the substrate, and the first emission unit is in series with the second emission unit. The surface of the second emission unit facing away from the first emission unit includes an emission electrode, and the emission electrode is used to apply a current to the first emission unit and the second emission unit, so that the first emission unit and the second emission unit respectively emit the first optical signal and the second optical signal.

[0021] With this implementation mode, one driving current can drive the first emission unit to emit the first optical signal and drive the second emission unit to emit the second optical signal, improving the quantum efficiency of the laser and reducing the driving current for driving the laser to emit light.

[0022] Based on the first aspect, in an alternative implementation mode, the first emission unit includes a first gain medium and a first filter, the second emission unit includes a second gain medium and a second filter, the second filter, the second gain medium, the first gain medium, and the first filter are arranged in sequence along the direction perpendicular to the first surface of the substrate. The first filter is used to filter the optical signal emitted by the first gain medium to obtain the first optical signal, and the second filter is used to filter the optical signal emitted by the second gain medium to obtain the second optical signal.

[0023] With this implementation mode, the filtering function of the laser can be realized while reducing the driving current.

[0024] Based on the first aspect, in an alternative implementation mode, the laser further includes a first reflection layer and a second reflection layer on the first surface of the substrate. The first reflection layer and the second reflection layer form an optical resonator. The first emission unit and the second emission unit are both located in the optical resonator. The first optical signal and the second optical signal are transmitted out from the first reflection layer and transmitted to the converging module.

[0025] With this implementation mode, the laser resonance function of the laser can be realized while reducing the driving current.

[0026] Based on the first aspect, in an alternative implementation, the N transmitting units further include a third transmitting unit. The first transmitting unit is connected between the third transmitting unit and the first surface of the substrate, and the third transmitting unit is connected in series with the first transmitting unit. The surface of the third transmitting unit facing away from the first transmitting unit includes a transmitting electrode, and the transmitting electrode is used to apply a driving current to the third transmitting unit and the first transmitting unit, so that the third transmitting unit and the first transmitting unit respectively emit a third optical signal and the first optical signal. The wavelength of the third optical signal is different from the wavelength of the first optical signal, and the wavelength of the third optical signal is different from the wavelength of the second optical signal.

[0027] With this implementation, the laser is packaged in the form of a single chip, and this single chip can include transmitting units that emit multiple optical signals with different wavelengths, improving the integration degree of the laser. Moreover, the laser in the form of a single chip can emit multiple wavelengths, reducing the device size of the laser package in the case of emitting multiple wavelengths. If the laser needs to emit optical signals with more wavelengths, it effectively suppresses the area occupied by the laser package on the device single board.

[0028] Based on the first aspect, in an alternative implementation, the laser further includes a reflection module located on the first surface of the substrate and a converging module located on the second surface of the substrate. The reflection module is located on the transmission optical path of the first optical signal emitted from the first transmitting unit, and the reflection module is also located on the transmission optical path of the second optical signal emitted from the second transmitting unit. The reflection module is used to reflect the first optical signal and the second optical signal to the converging module, and the converging module is used to converge the first optical signal and the second optical signal to the light output port of the laser.

[0029] With this implementation, since the converging module and the reflection module are integrated on the substrate, the reliability of the laser is improved, and the integration degree of the laser package is also improved.

[0030] Based on the first aspect, in an alternative implementation, the laser further includes a wavelength multiplexer located on the first surface of the substrate. The wavelength multiplexer is located on the transmission optical path of the first optical signal emitted from the first transmitting unit, and the wavelength multiplexer is also located on the transmission optical path of the second optical signal emitted from the second transmitting unit. The wavelength multiplexer is used to combine the first optical signal and the second optical signal to obtain a combined optical signal, and transmit the combined optical signal to the deflection unit. The deflection unit is used to deflect the combined optical signal to the light output port of the laser.

[0031] With this implementation method, the laser is packaged in the form of a single chip. This multiplexer can combine multiple different wavelengths into one, improving the integration of the laser and reducing the device size of the laser package in the case of emitting multiple wavelengths. If the laser needs to emit more optical signals of different wavelengths, it effectively suppresses the area occupied by the laser package on the device single board.

[0032] In a second aspect, an embodiment of the present application provides an optoelectronic conversion module, including a modulator, an output optical fiber, and a laser as described in any one of the first aspects above. The modulator is respectively connected to the laser and the output optical fiber. The modulator is configured to receive a service electrical signal and receive an optical signal from the laser. The modulator is further configured to modulate the service electrical signal onto the optical signal to obtain a service optical signal, and emit the service optical signal through the output optical fiber. For the description of the beneficial effects of this aspect, please refer to the first aspect and will not be elaborated here.

[0033] In a third aspect, an embodiment of the present application provides an optoelectronic conversion module, including a demodulator, an input optical fiber, and a laser as described in any one of the first aspects above. The demodulator is respectively connected to the laser and the input optical fiber. The demodulator is configured to receive a service optical signal from the input optical fiber and receive an optical signal from the laser. The demodulator is further configured to perform coherent demodulation on the service optical signal according to the optical signal to obtain a service electrical signal. For the description of the beneficial effects of this aspect, please refer to the first aspect and will not be elaborated here.

[0034] In a fourth aspect, an embodiment of the present application provides a communication system, including a device and the optoelectronic conversion module as described in the second aspect above. The device includes a processing chip and a connector. The processing chip is connected to the optoelectronic conversion module through the connector. The processing chip is configured to send the service electrical signal to the optoelectronic conversion module.

[0035] In a fifth aspect, an embodiment of the present application provides a communication system, including a device and the optoelectronic conversion module as described in the third aspect above. The device includes a processing chip and a connector. The processing chip is connected to the optoelectronic conversion module through the connector. The processing chip is configured to receive the service electrical signal from the optoelectronic conversion module.

[0036] Sixth aspect, an embodiment of the present application provides a radar, including a detector array, a processor, and a laser as described in any one of the above first aspects. The processor is respectively connected to the detector array and the laser; the laser is configured to emit a detection optical signal; the detector array is configured to receive a reflected optical signal and convert the reflected optical signal into a detection electrical signal, where the reflected optical signal is an optical signal reflected by a detection object according to the detection optical signal; the processor is configured to obtain relevant information of the detection object according to the detection electrical signal.

[0037] Seventh aspect, an embodiment of the present application provides a vehicle, including a vehicle body, and the vehicle further includes the radar as described in the sixth aspect. Description of the Drawings

[0038] Figure 1 It is a structural schematic diagram of an optical network provided by the present application;

[0039] Figure 2a It is a structural schematic diagram of a first communication system provided by the present application;

[0040] Figure 2b It is a structural schematic diagram of a second communication system provided by the present application;

[0041] Figure 2c It is a structural schematic diagram of a communication system provided by the present application;

[0042] Figure 3 It is a schematic diagram of an existing TO structure;

[0043] Figure 4 It is a top view structural schematic diagram of a laser provided by the present application;

[0044] Figure 5 It is Figure 4 a side view structural schematic diagram of the laser shown;

[0045] Figure 6 It is Figure 5 a first example structural diagram of the laser shown;

[0046] Figure 7 It is Figure 6 an optical path schematic diagram of the laser shown;

[0047] Figure 8 It is Figure 5 a second example structural diagram of the laser shown;

[0048] Figure 9 It is Figure 5 a third example structural diagram of the laser shown;

[0049] Figure 10 It isFigure 9 Example diagrams of the first optical resonator and the second optical resonator shown;

[0050] Figure 11 A side view structural example diagram of the laser provided by this application;

[0051] Figure 12 is Figure 11 The first structural example diagram of the laser shown;

[0052] Figure 13 is Figure 11 The second structural example diagram of the laser shown;

[0053] Figure 14 Another side view structural example diagram of the laser provided by this application;

[0054] Figure 15 Another top view structural example diagram of the laser provided by this application;

[0055] Figure 16 The first packaging structural example diagram of the laser provided by this application;

[0056] Figure 17 An example structural diagram of an embodiment of the lidar provided by this application;

[0057] Figure 18 An example structural diagram of an embodiment of the vehicle provided by this application. Detailed implementation manners

[0058] Next, the technical solutions in the embodiments of this application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of this application.

[0059] Figure 1It is a structural example diagram of the optical network provided by this application. The optical network 100 includes a first communication system 101 and a second communication system 102, and the first communication system 101 and the second communication system 102 are connected by an optical fiber. The number of communication systems included in the optical network 100 is not limited in this example. For example, the first communication system 101 can be connected to multiple second communication systems 102 through an optical splitter. The networking type of the optical network is not limited in this example. For example, the optical network can adopt ring networking or star networking, etc. The network type applied by the optical network 100 is not limited in this example. For example, if the optical network 100 shown in this example is applied to PON, one of the first communication system 101 and the second communication system 102 can be an optical network unit (ONU) or an optical network terminal (ONT), and the other communication system of the first communication system 101 and the second communication system 102 can be an optical line terminal (OLT). If the optical network 100 is applied to an optical transport network (OTN), both the first communication system 101 and the second communication system 102 can be OTN devices. The optical network 100 shown in this example can also be applied to a data center network (DCN) or a metropolitan area network, etc., without specific limitation. Taking the first communication system 101 as an example, the device type of the first communication system 101 is not limited in this example. For example, the first communication system 101 can be an optical transmission device, an optical access device, a router, a switch, a wireless base station, a wireless remote access device, a wireless baseband signal processing device, etc., or it can also be a computing server (usually simply referred to as a server), a high performance computer (HPC), a storage server, or a memory resource pool, etc. The type of the first communication system 101 is not limited in this example, as long as the first communication system 101 has an electro-optical conversion function and an optical interface capable of connecting an optical fiber. For the description of the type of the second communication system 102, please refer to the description of the first communication system 101, and no specific elaboration will be made here.

[0060] Figure 2aThis is a structural example diagram of the first communication system provided by this application. The first communication system 101 includes a device 111 and one or more optoelectronic conversion modules 112. Among them, the optoelectronic conversion module 112 can also be called an optical transceiver module or an optical module, etc. In this example, the number of devices 111 included in the first communication system 101 is not limited. The device 111 and the first communication system 101 are integrated devices, or the device 111 is an independent pluggable single board. In this example, the number of optoelectronic conversion modules 112 included in the first communication system 101 is not limited. The optoelectronic conversion module 112 can be integrated with the device 111 or can be plugged into the single board of the device 111, etc., and no specific limitation is made. Specifically, the device 111 has a packaged processing chip 201 and a connector 202. Among them, the processing chip 201 can include one or more chips, or one or more integrated circuits. For another example, the processing chip 201 can include one or more of an optical digital signal processor (oDSP), a field-programmable gate array (FPGA), an application-specific integrated circuit (ASIC), a system on chip (SoC), a central processor unit (CPU), a network processor (NP), a microcontroller unit (MCU), a programmable logic device (PLD), a network card chip, a storage interface chip, or other integrated chips, and no specific elaboration is made. The processing chip 201 has a transmit (TX) interface 202, and the TX interface 202 is connected to a connector 203. The connector 203 is used to provide an electrical interface, and this electrical interface realizes a pluggable connection with the optoelectronic conversion module 112. The optoelectronic conversion module 112 includes a modulator 212 connected to the connector 203 and a laser 211 connected to the modulator 212. The laser 211 shown in this example can emit multiple optical signals with different wavelengths to the modulator. The modulator 212 receives the service electrical signal from the device 111 and modulates the service electrical signal onto the multiple optical signals with different wavelengths to obtain a first service optical signal. The modulator 212 is connected to an output optical fiber 213. Then, the modulator 212 emits the first service optical signal via the output optical fiber 213.

[0061] Figure 2bA structural example diagram of the second communication system provided by this application. The second communication system 102 includes a device 121 and one or more optoelectronic conversion modules 122. The number of devices 121 included in the second communication system 102 is not limited in this example. For the description of the device 121, please refer to Figure 2a the description of the device 111 shown, and details are not elaborated here. The number of optoelectronic conversion modules 122 included in the second communication system 102 is not limited in this example. The optoelectronic conversion module 122 can be integrated with the device 121 or can be pluggable on the single board of the device 121, etc., and specific details are not limited. Specifically, the device 121 has a packaged processing chip 231 and a connector 232. The processing chip 231 has a receive (RX) interface 233, and the RX interface 233 is connected to the connector 232. The connector 232 is used to provide an electrical interface, and this electrical interface realizes a pluggable connection with the optoelectronic conversion module 122. The optoelectronic conversion module 122 includes a demodulator 234 connected to the connector 232 and a laser 235 connected to the demodulator 234. The demodulator 234 is connected to the input optical fiber 236 and receives the second service optical signal via the input optical fiber 236. The demodulator 234 receives the optical signal from the laser 235. The demodulator 234 performs coherent demodulation on the second service optical signal according to the tuned optical signal to obtain the second service electrical signal. The demodulator 234 sends the second service electrical signal to the processing chip 231 through the connector 232 and the RX interface 233. As shown in this embodiment Figure 2a and Figure 2b shown may be included in the same communication system.

[0062] Figure 2c A structural example diagram of the communication system provided by this application. Figure 2c For the description of the device structure included in the communication system shown, please refer to Figure 2a and Figure 2b shown, and details are not elaborated here. The optoelectronic conversion module includes a laser 241 and a modulator connected in sequence. For specific description, please refer to Figure 2a shown, and details are not elaborated here. The optoelectronic conversion module also includes a laser 242 and a demodulator connected in sequence. For specific description, please refer to Figure 2b shown, and details are not elaborated here. The lasers 241 and 242 included in the optoelectronic conversion mode shown in this embodiment can be two different lasers or realized by the same laser, and specific details are not limited in this embodiment.

[0063] The embodiments of the present application provide a laser that can emit multiple different wavelengths and effectively reduce the size of the laser package. Among them, the laser package is used to package the laser, and the laser package provides necessary interfaces for the laser to ensure the normal operation of the laser and is used to improve the reliability and stability of the laser. To better understand the laser provided by the embodiments of the present application, in combination with Figure 3 illustrates the existing TO structure. Among them, Figure 3 is an example diagram of the existing TO structure. Figure 3 As shown, it includes a module body 310, and the module body 310 includes a plurality of discrete TOs. For example, the module body 310 shown in this example is connected to a first TO 301, a second TO 302, and a third TO 303 located at different positions. The first TO 301 includes a first laser, the second TO 302 includes a second laser, and the third TO 303 includes a third laser. The first wavelength emitted by the first laser, the second wavelength emitted by the second laser, and the third wavelength emitted by the third laser are different from each other. For example, the first wavelength is 1490 nanometers (nm), the second wavelength is 1342 nm, and the third wavelength is 1577 nm. The wavelengths are not limited in this example. Inside the module body 310, there is a multiplexing module. The first wavelength, the second wavelength, and the third wavelength are transmitted to the multiplexing module along different directions. The multiplexing module is used to multiplex the first wavelength, the second wavelength, and the third wavelength to emit a combined optical signal. Among them, the multiplexing module can use a mirror, a polarization beam combiner (PBC), and one or more lenses for multiplexing.

[0064] Figure 3 As shown, since it includes a plurality of discrete TOs, the overall size of the laser package is increased, resulting in the laser being difficult to apply to small package types. For example, a quad small form pluggable (QSFP) package. However, the volume of the QSFP package is relatively large. If the laser needs to emit more wavelengths of optical signals, it will cause the laser package to occupy a larger area on the device single board of the optical communication device, thereby increasing the size of the device single board. Since the multiplexing module uses a variety of optical devices, the structure of the multiplexing module is complex and the tolerance is small, thereby increasing the structural complexity of the laser package.

[0065] Figure 4 This is a top view structure example diagram of the laser provided by the present application. Figure 5 is Figure 4 a side view structure example diagram of the laser shown. Specifically, Figure 4 The figure shown is the top view structure of the laser in the XZ plane, Figure 5The figure shows a side view structure of the laser in the XY plane. The XY plane includes direction X and direction Y, where direction X is the transmission direction of the optical signal emitted by the laser. Direction Y is the direction perpendicular to the surface of the laser substrate. Direction Z is perpendicular to direction X and direction Y respectively. In this embodiment, taking the perpendicularity between any two of direction X, direction Y, and direction Z as an example, in other examples, the angle between the two directions can also be an acute angle or an obtuse angle, and the specific angle is not limited. In this embodiment, taking the type of the laser as a distributed bragg reflector (DBR) as an example, it should be clear that the type of the laser in this embodiment is not limited. For example, the type of the laser can also be a fabry–pérot laser, a distributed feedback laser, a modulated grating y-branch (MG-Y) laser, a multi-channel interference (MCI) laser, a V-cavity laser, and a chirped sampled grating–distributed reflector (CSG-DR) laser, etc.

[0066] The laser shown in this embodiment includes N emission units, where N is any integer not less than 2. The laser further includes a substrate 450 and a deflection unit. Among them, in this embodiment, taking the deflection unit including a reflection module 430 and a converging module 440 as an example. Among them, the first surface of the substrate 450 is used to fix N emission units and the reflection module 430. Moreover, the N emission units and the reflection module 430 are arranged in sequence along direction X. Specifically, taking N equal to 2 as an example in this embodiment, it can be understood that the N emission units at least include a first emission unit 410 and a second emission unit 420 that are connected to each other. The first emission unit 410 and the second emission unit 420 are arranged side by side on the first surface of the substrate 450, and the first emission unit 410 is located between the second emission unit 420 and the reflection module 430.

[0067] The substrate 450 can be an indium phosphide (InP) substrate, an indium gallium arsenide (InGaAs) substrate, a GaAs substrate, an indium gallium aluminum arsenide (InGaAlAs) substrate, an indium gallium aluminum antimonide (InGaAlAsSb) substrate, an aluminum gallium arsenide (ALGaAs) substrate, or a gallium nitride (GaN) substrate, etc., which is not limited specifically in this embodiment. For the specific structure of each emission unit, reference can be made to Figure 6 as shown, where Figure 6 isFigure 5The first exemplary structural diagram of the emitting unit shown. The first emitting unit 410 specifically includes a P-type doped layer 601, a first gain medium 602, and an N-type doped layer 603 arranged in sequence along the direction Y. Specifically, the N-type doped layer 603 is located on the first surface of the substrate 450. The N-type doped layer 603 can be N-type doped InGaAsP, InP, or GaAs. In this embodiment, taking the N-type doped layer 603 as N-type doped InP as an example, then the N-type doped layer 603 is an N-InP layer. For example, N-type ions of a semiconductor material are implanted into InP to obtain the N-type doped layer 603. Along the direction Y, the surface of the N-type doped layer 603 includes the first gain medium 602, and the first gain medium 602 is composed of a semiconductor gain medium material and is used to amplify the power of the optical signal. For example, in this embodiment, taking the material of the first gain medium 602 as multiple quantum well (MQW) as an example. The first emitting unit further includes a P-type doped layer 601 located on the surface of the first gain medium 602 along the direction Y. The P-type doped layer 601 can be P-type doped InGaAsP, InP, or GaAs. In this embodiment, taking the P-type doped layer 601 as P-type doped InP as an example, then the P-type doped layer 601 is a P-InP layer. For example, P-type ions of a semiconductor material are implanted into InP to obtain the P-type doped layer 601. Among them, the N-type doped layer 603 and the P-type doped layer 601 form a first PN junction. Specifically, in this embodiment, taking the first PN junction as a PIN diode (positive intrinsic negative diode, PIN diode) structure as an example. Along the direction Y, the surface of the P-type doped layer 601 includes a first gain electrode 604, and the second surface of the substrate 450 includes a second gain electrode 605. The second gain electrode 605 is connected to the N-type doped layer 603 through the substrate 450. It can be understood that along the direction Y, the P-type doped layer 601, the first gain medium 602, and the N-type doped layer 603 are located between the first gain electrode 604 and the second gain electrode 605. The first gain electrode 604 and the second gain electrode 605 can supply power to the first gain medium 602 and form a circuit loop. The description of the position of the second gain electrode 605 in this embodiment is an optional example and is not limited. For example, the second gain electrode 605 is located between the surface of the substrate 450 and the N-type doped layer 603. The first gain electrode 604 is used to apply a driving current to the first gain medium 602, and the first gain medium 602 is used to emit a first optical signal according to this driving current. That is, the first gain medium 602 generates a first optical signal under the excitation of the driving current. Specifically, when the driving current passes through the P-type doped layer 601 and the N-type doped layer 603, electrons flow from the N-type doped layer 603 to the P-type doped layer 601, and holes flow from the P-type doped layer 601 to the N-type doped layer 603. A population inversion is formed at the first PN junction, and the recombination of electrons and holes generates an optical signal and emits it.The first gain electrode 604 is connected to the electrical port of the processing chip, and the processing chip is configured to send current or voltage to the first gain electrode 604 so that the first gain electrode 604 applies a driving current to the first gain medium. Optionally, if the photoelectric conversion module includes a processing chip, the first gain electrode 604 is connected to the electrical port of the processing chip. For the description of the type of the processing chip of the photoelectric conversion module, please refer to the description of the type of the processing chip, which will not be elaborated here. The second emission unit 420 specifically includes a P-type doped layer 611, a second gain medium 612, and an N-type doped layer 613 arranged in sequence along the direction Y. Along the direction Y, the P-type doped layer 611, the second gain medium 612, and the N-type doped layer 613 are located between the third gain electrode 614 and the fourth gain electrode 615. For the specific description, please refer to the description of the first emission unit 410, which will not be elaborated here. It can be understood that the third gain electrode 614 is configured to apply a driving current to the second gain medium 612, and the second gain medium 612 is configured to emit a second optical signal according to the driving current.

[0068] Figure 7 is Figure 6 an optical path example diagram of the laser shown. The second optical signal 701 emitted by the second gain medium of the second emission unit 420 passes through the first emission unit 410 and exits from the first emission unit 410 to be incident on the reflection module 430. The first optical signal 702 emitted by the first gain medium of the first emission unit 410 exits from the first emission unit 410 to be incident on the reflection module 430. The first optical signal 702 and the second optical signal 701 are reflected by the reflection module 430 to be incident on the convergence module 440. The convergence module 440 is configured to converge the first optical signal 702 and the first optical signal 701, and transmit the converged first optical signal 702 and second optical signal 701 to the output optical fiber 710. In the example of this embodiment, the reflection module 430 is located on the transmission optical path of the first optical signal 702 emitted from the first emission unit 410 to deflect the transmission direction of the first optical signal 702. The reflection module 430 is located on the transmission optical path of the second optical signal 701 emitted from the second emission unit 420 to deflect the transmission direction of the second optical signal 701, so as to ensure that the first optical signal 702 and the second optical signal 701 reflected from the reflection module 430 are both transmitted to the convergence module 440. Combining Figure 6 and Figure 7As shown, the material on the first surface of the substrate 450 is etched to obtain the reflection module 430. The material on the first surface of the substrate 450 can be InP, InGaAs, GaAs, InGaAlAs, InGaAlAsSb, ALGaAs, GaN, etc. The second surface of the substrate 450 includes a converging module 440. The converging module 440 shown in this embodiment can be formed on the second surface of the substrate 450 by etching. Since the converging module 440 and the reflection module 430 shown in this embodiment are formed on the substrate 450 by etching, the reliability of the laser is improved, and the integration of the laser package is also improved. It should be noted that the description of the formation of the reflection module 430 and the converging module 440 in this embodiment is an optional example and is not limited. For example, a mirror serving as the reflection module 430 can be mounted on the first surface of the substrate 450. Another example is that a lens serving as the converging module 440 can be mounted on the second surface of the substrate 450. To ensure that the converging module 440 can converge the first optical signal 702 and the second optical signal 701 reflected from the reflection module 430 to the output optical fiber 710. The converging module 440 can be a spherical mirror or an aspherical mirror, etc. The light incident surface of the output optical fiber 710 is located at the focal point of the converging module 440. Based on the refraction phenomenon of light, when the first optical signal 702 and the second optical signal 701 pass through the converging module 440, the first optical signal and the second optical signal will bend towards the central axis of the converging module 440, thereby changing the transmission direction and achieving the purpose of converging the first optical signal 702 and the second optical signal 701 to the output optical fiber 710. The first optical signal 702 and the second optical signal 701 are transmitted in the output optical fiber 710 and then exit from the laser. For example, as shown in this embodiment, the first optical signal 702 and the second optical signal 701 emitted from the first reflection module 410 are both transmitted in a direction parallel to the plane XZ. The first optical signal 702 and the second optical signal 701 whose transmission directions are changed by the reflection module 430 are transmitted in a direction parallel to the plane YZ. Taking the first optical signal 702 as an example, in this embodiment, it is taken that the transmission direction of the optical signal emitted from the first reflection module 410 is perpendicular to the transmission direction of the first optical signal 702 reflected by the reflection module 430. In other examples, the transmission direction of the optical signal emitted from the first reflection module 410 and the transmission direction of the first optical signal 702 reflected by the reflection module 430 can form any angle.

[0069] To reduce the optical absorption loss of the optical signal emitted by the laser, the wavelength of the second optical signal 702 shown in this embodiment is greater than the wavelength of the first optical signal 701. Herein, optical absorption loss refers to the phenomenon that during the transmission of light, due to the interaction between the optical signal and the medium molecules of the emitting unit, the energy of the optical signal is absorbed and gradually attenuated. Optical absorption loss is related to the wavelength of the optical signal. For light with a short wavelength, the energy is higher, so it is more likely to be absorbed by the medium molecules of the emitting unit. While for light with a long wavelength, the energy is lower, so it is less likely to be absorbed by the medium molecules of the emitting unit. Therefore, when the wavelength of the second optical signal 701 shown in this embodiment is greater than the wavelength of the first optical signal 702, when the second optical signal passes through the first emitting unit 410, the energy of the second optical signal is not easily absorbed by the medium molecules of the first emitting unit 410, effectively reducing the optical absorption loss during the transmission of the second optical signal 701 to the output optical fiber 710. The wavelength of the first optical signal 702 is larger, and when the first optical signal 702 is transmitted to the output optical fiber 710, it does not need to pass through the second emitting unit 420. Then, the energy of the first optical signal will not be absorbed by the second emitting unit 420, effectively reducing the optical absorption loss of the first optical signal.

[0070] The wavelength of the first optical signal emitted by the first emitting unit 410 shown in this embodiment is related to at least one of the following:

[0071] The medium type of the gain medium, the temperature of the first emitting unit, the first gain electrode, and the power provided by the second gain electrode to the first gain medium.

[0072] Among them, the temperature of the first emitting unit can be controlled by a thermoelectric cooler (TEC), and the TEC can be attached to the first gain medium of the first emitting unit. It should be clear that the method for controlling the temperature of the first emitting unit in this embodiment is not limited. Then, the wavelength of the first optical signal can be adjusted by adjusting any one of the medium type of the first gain medium of the first emitting unit, the temperature of the first emitting unit, the first gain electrode, and the power provided by the second gain electrode to the first gain medium. For the description of adjusting the wavelength of the second optical signal, please refer to the description of adjusting the wavelength of the first optical signal, and details will not be elaborated here. It can be understood that by adjusting the wavelengths of the first optical signal and the second optical signal, it is ensured that the wavelength of the second optical signal is greater than the wavelength of the first optical signal to reduce the optical absorption loss of the optical signal emitted by the laser.

[0073] In this embodiment, taking the example that the first optical signal emitted by the first transmitting unit and the second optical signal emitted by the second transmitting unit need to pass through the reflection module and the convergence module in sequence and converge to the output optical fiber. In other examples, the convergence module can also be directly located on the transmission optical paths of the first optical signal and the second optical signal emitted from the first transmitting unit. Then, the first optical signal and the second optical signal emitted from the first transmitting unit can be directly transmitted to the convergence module without passing through reflection, and the convergence module converges the first optical signal and the second optical signal to the output optical fiber.

[0074] Using the laser shown in this embodiment, the laser is packaged in the form of a single chip, and the chip includes the substrate shown in the above embodiment and N transmitting units provided on the first surface of the substrate. By electrically controlling the single chip, the emission of multiple wavelengths can be directly achieved. For example Figure 6 As shown, by applying drive currents to the first transmitting unit and the second transmitting unit respectively through the first gain electrode 604 and the third gain electrode 614, the single chip will emit two wavelengths, namely the first optical signal and the second optical signal. Since the single chip can emit multiple wavelengths, the integration degree of the laser is improved. Moreover, the laser in the form of a single chip can emit multiple channels of wavelengths, reducing the device size of the laser package in the case of emitting multiple channels of wavelengths. If the laser needs to emit more wavelength optical signals, it effectively suppresses the area occupied by the laser package on the device single board. Moreover, the reflection module and the convergence module are etched on the substrate, simplifying the packaging of the laser and improving the integration degree and reliability of the laser.

[0075] Figure 8 For Figure 5 The second example structure diagram of the laser shown. The first transmitting unit shown in this embodiment specifically includes a first gain module and a first filtering module. The first gain module specifically includes a first gain electrode 604, a P-type doped layer 601, a first gain medium 602, an N-type doped layer 603, and a second gain electrode 605. For specific descriptions, please refer to Figure 6The corresponding description will not be elaborated here. The first filtering module specifically includes a P-type doped layer 801, a waveguide dielectric layer 802, and an N-type doped layer 803 arranged in sequence along the Y direction. As the first filter, the first filtering module can adjust the wavelength of the optical signal emitted by the first gain module, thereby locking the optical signal emitted by the first emitting unit at the first wavelength. The first filtering module further includes a first filtering electrode 804 on the surface of the P-type doped layer 801 and a second filtering electrode 805 on the second surface of the substrate. The first filtering electrode 804 and the second filtering electrode 805 can also supply power to the first filtering module to control the adjustment of the phase of the optical signal emitted by the first gain module by the first filtering module, thereby achieving wavelength adjustment. The second emitting unit shown in this embodiment specifically includes a second gain module and a second filtering module. The second gain module specifically includes a third gain electrode 614, a P-type doped layer 611, a second gain medium 612, an N-type doped layer 613, and a fourth gain electrode 615. For specific description, please refer to Figure 6 The corresponding description will not be elaborated here. The second filtering module specifically includes a P-type doped layer 811, a waveguide dielectric layer 812, and an N-type doped layer 813 arranged in sequence along the Y direction. As the second filter, the second filtering module can adjust the wavelength of the optical signal emitted by the second gain module, thereby locking the optical signal emitted by the second emitting unit at the second wavelength. The second filtering module further includes a third filtering electrode 814 on the surface of the P-type doped layer 811 and a fourth filtering electrode 815 on the second surface of the substrate. The third filtering electrode 814 and the fourth filtering electrode 815 can also supply power to the second filtering module to control the adjustment of the phase of the optical signal emitted by the second gain module by the second filtering module.

[0076] In this embodiment, taking the second filtering module, the second gain module, the first filtering module, and the first gain module arranged in sequence along the X direction as an example, there is no limitation. For example, along the X direction, the second filtering module is located between the first gain module and the second gain module. Another example is that the first filtering module is located between the first gain module and the second gain module, etc., as long as the first filtering module can lock the wavelength of the optical signal emitted by the first gain module at the first wavelength, and the second filtering module can lock the optical signal emitted by the second gain module at the second wavelength. Figure 8 The first optical signal emitted by the shown first emitting unit and the second optical signal emitted by the second emitting unit can sequentially pass through the reflection module 430 and the converging module 440 and be transmitted to the output optical fiber. For specific description, please refer to Figure 6 As shown, it will not be elaborated here.

[0077] Figure 9 is Figure 5 the third example structure diagram of the shown laser. Figure 9Taking the structure of the first transmitting unit as an example, the first transmitting unit specifically includes a second resonance module 930, a first filtering module 920, a first gain module 910, and a first resonance module 900 arranged in sequence along the direction X. In this embodiment, taking the first filtering module 920 being located between the second resonance module 930 and the first gain module 910 as an example, in other examples, the first filtering module 920 may also be located between the first resonance module 900 and the first gain module 910, and no specific limitation is made. Specifically, the first resonance module 900 includes a first resonance electrode 901, a P-type doped layer 902, a first reflective layer 903, an N-type doped layer 904, and a second resonance electrode 905 arranged in sequence along the direction Y. Among them, the N-type doped layer 904 is located on the first surface of the substrate, and the second resonance electrode 905 is located on the second surface of the substrate. For the description of the P-type doped layer 902 and the N-type doped layer 904, please refer to Figure 6 the corresponding description, which will not be elaborated here. The second resonance module 930 includes a third resonance electrode 931, a P-type doped layer 932, a second reflective layer 933, an N-type doped layer 934, and a second resonance electrode 935 arranged in sequence along the direction Y. Among them, the N-type doped layer 934 is located on the first surface of the substrate, and the second resonance electrode 935 is located on the second surface of the substrate. For the description of the P-type doped layer 932 and the N-type doped layer 934, please refer to Figure 6The corresponding description will not be elaborated here. Taking the first reflective layer 903 as an example, the structure of the first reflective layer 903 can be a grating, a microring resonator, or a waveguide. The first reflective layer 903 can be an undoped indium gallium arsenide phosphide (InGaAsP) layer, such as an intrinsic InGaAsP layer, that is, an i-InGaAsP layer. For the description of the second reflective layer 933, please refer to the description of the first reflective layer 903, which will not be elaborated here. The first reflective layer 903 and the second reflective layer 933 shown in this embodiment form a first optical resonator. Optionally, the first reflective layer 903 and the second reflective layer 933 can form a periodic tuning structure similar to a Fabry-Perot etalon, which is equivalent to integrating a Fabry-Perot cavity inside the first emission unit. The first optical resonator formed by the first reflective layer 903 and the second reflective layer 933 is used to periodically tune the optical signal emitted by the first gain medium to ensure that the wavelength of the optical signal emitted from the first optical resonator is the first wavelength. Specifically, the interference between the reflected lights formed by the optical signal emitted by the first gain medium reflecting back and forth multiple times between the first reflective layer 903 and the second reflective layer 933 is used to achieve periodic tuning. For example, if the wavelength of the first optical signal that the first emission unit hopes to emit is the first wavelength, then the optical power of the first wavelength transmitted in the first optical resonator will obtain the maximum gain, so that the first wavelength generates a peak optical power. It can be understood that the first optical resonator formed by the first reflective layer 903 and the second reflective layer 933 enhances the optical power of the first wavelength by reflecting the optical signal emitted by the first gain medium multiple times, and the first optical signal with the first wavelength is transmitted out from the first reflective layer 903, while the optical powers of the remaining optical signals gradually decrease until they are basically close to zero. The first filtering module 920 and the first gain module 910 are both located inside the first optical resonator. The first resonant electrode 901 and the third resonant electrode 931 shown in this embodiment are used to supply power to the first optical resonator to adjust the wavelength range tuned by the first optical resonator. The first filtering electrode 921 and the second filtering electrode 925 can also supply power to the first filtering module 920 to control the phase adjustment of the first filtering module 920.

[0078] The first optical resonator of the first emission unit shown in this embodiment is used to emit a first optical signal, and the wavelength of the first optical signal is related to at least one of the following:

[0079] The medium type of the first gain medium, the temperature of the first emission unit, the tuning of the first optical resonator, the first gain electrode, and the power provided by the second gain electrode to the first gain medium.

[0080] For the description of the structure of the second emission unit and the wavelength of the second optical signal emitted by the second emission unit, please refer to the description of the structure of the first emission unit and the wavelength of the first optical signal emitted by the first emission unit, and no specific details will be elaborated here. To reduce the optical absorption loss of the optical signal emitted by the laser, the wavelength of the second optical signal is greater than that of the first optical signal. For specific description, please refer to the above description of reducing the optical absorption loss of the optical signal of the laser, and no specific details will be elaborated here.

[0081] Figure 10 For Figure 9 An exemplary diagram of the first optical resonator and the second optical resonator shown in the figure. The first emission unit of the laser shown in this embodiment includes a first optical resonator 1001, and the second emission unit includes a second optical resonator 1002. The first optical resonator 1001 includes a first reflective layer and a second reflective layer, and the second optical resonator 1002 includes a third reflective layer and a fourth reflective layer. For the description of the second optical resonator 1002, please refer to the description of the first optical resonator 1001 shown above, and no specific details will be elaborated here. On the first surface of the same substrate, the second reflective layer and the third reflective layer are connected to each other along the direction X. For the description of the second optical resonator 1002 generating the second optical signal, please refer to the description of the first optical resonator 1001 generating the first optical signal shown in the above embodiment, and no specific details will be elaborated here. The reflection module 430 shown in this embodiment is located on the transmission optical path of the first optical signal emitted from the first emission unit to deflect the transmission direction of the first optical signal. For the description of the reflection module 430, please refer to the above embodiment shown, and no specific details will be elaborated here. The second surface of the substrate 450 includes a converging module 440. For the description of the converging module 440, please refer to the above embodiment shown, and no specific details will be elaborated here. The first optical signal generated by the first optical resonator 1001 is transmitted out from the first reflective layer and transmitted to the reflection module 430. The reflection module 430 changes the transmission direction of the first optical signal and transmits the first optical signal to the converging module 440. The second optical signal generated by the second optical resonator 1002 is transmitted out from the third reflective layer and passes through the first optical resonator to be transmitted out from the first reflective layer. The second optical signal transmitted out from the first reflective layer is transmitted to the reflection module 430. The reflection module 430 changes the transmission direction of the second optical signal and transmits the second optical signal to the converging module 440. The light output port of the laser is connected to the output optical fiber 710. For the description of the output optical fiber 710, please refer to the above embodiment shown, and no specific details will be elaborated here.

[0082] Figure 11An example side view structure diagram of the laser provided by this application. The laser shown in this embodiment includes a substrate 1100, N emission units, a first emission electrode 1141, a second emission electrode 1142, a reflection module 1150, and a convergence module 1160. For the descriptions of the substrate 1100, the reflection module 1150, and the convergence module 1160, please refer to the above embodiments and will not be elaborated here. The N emission units shown in this embodiment are connected in series in sequence. For example Figure 12 As shown, taking the laser including two emission units as an example. Figure 12 is Figure 11 An example diagram of the first structure of the laser shown. The first emission unit 1210 is located between the second emission unit 1211 and the first surface of the substrate 1100, and the first emission unit 1210 is connected in series with the second emission unit 1211. Specifically, the first emission unit 1210 includes a first gain medium 1201, a first waveguide dielectric layer 1202, and a P-type doped layer 1203 arranged in sequence along the Y direction, and the first gain medium 1201 is located on the first surface of the substrate 1100. For specific descriptions, please refer to Figure 8 the corresponding descriptions and will not be elaborated here. The second emission unit 1121 includes a second waveguide dielectric layer 1206, a second gain medium 1205, and an N-type doped layer 1204 arranged in sequence along the Y direction, and the N-type doped layer 1204 is located on the surface of the P-type doped layer 1203. The first reflection electrode 1141 is located on the surface of the second waveguide dielectric layer 1206. The first waveguide dielectric layer 1202 in this embodiment serves as the first filter, and the second waveguide dielectric layer 1206 serves as the second filter. For the descriptions of the first filter and the second filter, please refer to the above embodiments and will not be elaborated here.

[0083] The series connection of the first emission unit 1210 and the second emission unit 1211 shown in this embodiment means that along the Y direction, the P-type doped layer 1203 of the first emission unit 1210 is in contact with the N-type doped layer 1204 of the second emission unit 1211, and a reverse tunnel junction layer is formed. A power supply circuit is formed between the first emission electrode 1141 and the second emission electrode 1142. Then, when the first emission electrode 1141 applies a driving current to the second emission unit 1211, this driving current can enable the second gain medium 1205 to emit an optical signal, and moreover, electrons pass through the reverse tunnel junction layer and are applied to the first gain medium 1201 to enable the first gain medium 1201 to emit an optical signal. By using the laser shown in this embodiment, the magnitude of the driving current can be effectively reduced. Combining Figure 5 and Figure 12 the examples shown, at Figure 5In the illustrated embodiment, in order to make the first emission unit and the second emission unit emit light, the drive current applied by the first gain electrode to the first gain medium may be 60 mA, and the drive current applied by the second gain electrode to the second gain medium may be 60 mA. Then, two 60-mA currents need to be applied for the laser to emit light. And Figure 12 In the illustrated embodiment, only one 60-mA drive current needs to be applied by the first reflection electrode 1141, and the first gain medium 1201 and the second gain medium 1205 can respectively emit optical signals simultaneously, so that Figure 12 In the illustrated embodiment, the drive current is effectively reduced. In this embodiment, the N-type doped layer 1204 can be formed by heavily doping with N-type ions, and the P-type doped layer 1203 can be formed by heavily doping with P-type ions, so as to increase the tunneling probability of the reverse tunnel junction layer, maintain characteristics such as a steep doping profile and low diffusion at high temperatures, and further improve the quantum efficiency of the laser. The quantum efficiency of a laser refers to the ratio of the number of laser photons emitted in the laser to the number of electrons injected into the laser.

[0084] In this embodiment, a laser including two emission units is taken as an example. In other examples, the laser may include multiple emission units, and a reverse tunnel junction layer is formed between any two adjacent emission units in the multiple emission units connected in series in sequence. For example, in N emission units connected in series in sequence, a reverse tunnel junction layer is formed between any two adjacent emission units. Then, N - 1 reverse tunnel junction layers will be formed in the N emission units. Then, one drive current can sequentially pass through N - 1 reverse tunnel junction layers, so that all N emission units emit optical signals.

[0085] It can be understood that in the first emission unit 1200, the optical signal emitted by the first gain medium is filtered by the first waveguide medium layer 1202 to emit the first optical signal. In the second emission unit 1211, the optical signal emitted by the second gain medium is filtered by the second waveguide medium layer 1206 to emit the second optical signal. The wavelength of the first optical signal is different from the wavelength of the second optical signal.

[0086] Figure 13 For Figure 11 The second structural example diagram of the illustrated laser. The laser shown in this embodiment includes a first emission electrode 1141, a second emission unit, a first emission unit, a substrate 1100, and a second emission electrode 1142 arranged in sequence along the Y direction. The laser further includes a reflection module 1150 and a convergence module 1160. For specific descriptions, please refer to Figure 12The corresponding description will not be elaborated here. The laser shown in this embodiment further includes a first reflective layer 1301 and a second reflective layer 1302 on the first surface of the substrate 1100. The first reflective layer 1301 and the second reflective layer 1302 form an optical resonator. For the description of the optical resonator, please refer to the above description of the first optical resonator, which will not be elaborated here. The first emission unit and the second emission unit are both located in the optical resonator. For example, the first gain medium 1201 and the second gain medium 1205 have a first end and a second end along the direction X. The first ends of the first gain medium 1201 and the second gain medium 1205 are connected to the first reflective layer 1301. The second ends of the first gain medium 1201 and the second gain medium 1205 are connected to the second reflective layer 1302. The first optical signal and the second optical signal generated by the optical resonator respectively transmit out from the first reflective layer 1301 and are transmitted to the reflection module 1150. The first optical signal and the second optical signal reflected by the reflection module 1150 are transmitted to the convergence module 1160. The convergence module 1160 is used to converge the first optical signal and the second optical signal to the output optical fiber 1200.

[0087] Figure 14 This is another side view structure example diagram of the laser provided by this application. The laser shown in this embodiment includes a substrate 1400 and a first emission unit 1401 and a second emission unit 1402 on the first surface of the substrate 1400. For the description of the first emission unit 1401 and the second emission unit 1402, please refer to Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 and Figure 10 any one of the embodiments shown, which will not be elaborated here. The laser shown in this embodiment further includes a third emission unit 1403 and a fourth emission unit 1404. Among them, the first emission unit 1401 is located between the third emission unit 1401 and the first surface of the substrate 1400, and the third emission unit 1403 is connected in series with the first emission unit 1401. For the positional relationship and structural description of the third emission unit 1403 and the first emission unit 1401, etc., please refer to Figure 11 , Figure 12 and Figure 13 any one of the embodiments in, which will not be elaborated here. The second emission unit 1402 is located between the fourth emission unit 1404 and the first surface of the substrate 1400, and the second emission unit 1402 is connected in series with the fourth emission unit 1404. For the positional relationship and structural description of the fourth emission unit 1404 and the second emission unit 1402, etc., please refer to Figure 11 , Figure 12 and Figure 13For the description of any of the embodiments, details are not elaborated herein. The surface of the third transmitting unit 1403 facing away from the first transmitting unit 1401 includes a first transmitting electrode 1411, and the second surface of the substrate 1400 includes a second transmitting electrode 1412. A power supply circuit is formed between the first transmitting electrode 1411 and the second transmitting electrode 1412 to apply a first driving current to the third transmitting unit 1403 and the first transmitting unit 1401. For specific description, please refer to Figure 12 As shown, details are not elaborated herein. The third transmitting unit 1403 and the first transmitting unit 1401 to which the first driving current is applied are used to emit a third optical signal and a first optical signal respectively. The surface of the fourth transmitting unit 1404 facing away from the second transmitting unit 1402 includes a third transmitting electrode 1413, and the second surface of the substrate 1400 includes a fourth transmitting electrode 1414. A power supply circuit is formed between the third transmitting electrode 1413 and the fourth transmitting electrode 1414 to apply a second driving current to the fourth transmitting unit 1404 and the second transmitting unit 1402. For specific description, please refer to Figure 12 As shown, details are not elaborated herein. The fourth transmitting unit 1404 and the second transmitting unit 1402 to which the second driving current is applied are used to emit a fourth optical signal and a second optical signal respectively. Among them, the wavelengths of the first optical signal, the second optical signal, the third optical signal, and the fourth optical signal are different from each other. The number of transmitting units included in the laser in this embodiment is not limited. For example, along the X direction, more transmitting units may be included. Also, along the Y direction, more transmitting units may be included, etc. Details are not specifically limited.

[0088] Figure 15 This is another top view structural example diagram of the laser provided by the present application. The substrate 1500 shown in this embodiment includes M emission sets arranged along the Z direction. M is any integer greater than 1. The laser shown in this embodiment includes a first emission set 1501 to an Mth emission set 1502. Each emission set includes N transmitting units. For the description of the structure of each emission set, please refer to Figure 4 、 Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 、 Figure 12 、 Figure 13 And Figure 14 As shown in any of the embodiments, details are not elaborated herein. The laser shown in this embodiment further includes a multiplexer 1503 on the first surface of the substrate 1500, and the multiplexer 1503 is located between the M emission sets and the transmitting unit 1504. In this embodiment, the structure of the first emission set 1501 is Figure 13Taking the example shown, the first emission set 1501 transmits the first optical signal, the second optical signal, the third optical signal, and the fourth optical signal to the multiplexer 1503, and the wavelengths are λ1, λ2, λ3, and λ4 respectively. The Mth emission set 1502 transmits the fifth optical signal, the sixth optical signal, the seventh optical signal, and the eighth optical signal to the multiplexer 1503, and the wavelengths are λ5, λ6, λ7, and λ8 respectively. The multiplexer 1503 combines λ1, λ2, λ3, λ4, λ5, λ6, λ7, and λ8 to obtain a combined optical signal. The multiplexer 1503 transmits the combined optical signal to the reflection module 1504, the reflection module 1504 reflects the combined optical signal to the convergence module, and the convergence module converges the combined optical beam to the output optical fiber. For the descriptions of the reflection module and the multiplexing module, please refer to the above embodiments, and the details are not described herein. In this embodiment, the type of the multiplexer 1503 is not limited, as long as the multiplexer 1503 can achieve the combination of each optical signal. For example, the multiplexer 1503 can be a multimode interference (MMI) multiplexer or a Y-junction splitter or a coupler, etc.

[0089] Figure 16 This is a schematic diagram of the first packaging structure of the laser provided by the present application. The packaging type of the laser shown in this embodiment is TO. The TO shown in this embodiment includes a TO cap 1601 and a TO base 1602. Among them, the TO cap 1601 covers the TO base 1602. The laser 1610 is fixedly arranged on the TO base 1602. The laser 1610 includes M emission units to emit M optical signals with different wavelengths. The laser 1610 is used to transmit the M optical signals to the light output port 1604 of the laser and converge them to the output optical fiber 1603. It can be understood that the laser 1610 is accommodated in the TO cap 601. In this embodiment, the positional relationship between the output optical fiber 1603 and the light output port 1604 of the laser is not limited. For example, the output optical fiber 1603 is located outside the TO cap 601 and is aligned with the light output port 1604 of the laser, so that the optical signal emitted by the laser can pass through the light output port 1604 of the laser and converge to the output optical fiber 1603. Another example is that the output optical fiber 1603 is connected to the light output port 1604 of the laser, or the output optical fiber 1603 extends into the TO cap 601 through the light output port 1604 of the laser, so that the optical signal emitted by the laser can converge to the output optical fiber 1603. For the description of the structure of the laser 1610, please refer to Figure 4 、 Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、Figure 11 , Figure 12 , Figure 13 , Figure 14 and Figure 15 As shown, details are not elaborated here. For the TO shown in this embodiment, there is no need to set a lens separate from the laser outside the laser, for example, at the light output port 1604 of the laser, etc., thus improving the integration of the TO. Moreover, since there is no need to align the optical path between the lens separate from the laser and the optical signal emitted by the laser, the requirements for the laser process are reduced, and the efficiency of converging the optical signal emitted by the laser to the output optical fiber is improved.

[0090] Figure 16 The description of the laser packaging shown is an optional example and is not limited. For example, the laser can also adopt chip on board (COB), etc.

[0091] The embodiment of the present application provides an optical network. For specific descriptions, please refer to Figure 1 the corresponding embodiment, details are not elaborated here.

[0092] The embodiment of the present application provides a communication system. For specific descriptions, please refer to Figures 2a to 2c the corresponding embodiment, details are not elaborated here.

[0093] The embodiment of the present application provides an optoelectronic conversion module. For specific descriptions, please refer to Figures 2a to 2c the corresponding embodiment, details are not elaborated here.

[0094] Figure 17 This is a structural example diagram of an embodiment of the lidar provided by the present application. Lidar is a target detection technology. Lidar emits detection optical signals. After the detection optical signals encounter the object to be measured, diffuse reflection occurs, and the distance, azimuth, height, speed, attitude, shape and other characteristic quantities of the object to be measured are determined through the reflected return optical signals. Lidar is applied to fields such as intelligent driving vehicles, intelligent driving aircraft, 3D printing, virtual reality (VR), augmented reality (AR), service robots, etc. The intelligent driving in the embodiment of the present application can be driverless, autonomous driving, or assisted driving.

[0095] The lidar 1700 shown in this embodiment includes a processor 1701, a laser 1702, a modulator 1704, and a detector array 1703. For the description of the structure of the laser 1702, please refer to any of the above embodiments, and details will not be elaborated here. The laser 1702 and the detector array 1703 are respectively connected to the processor 1701. The processor 1701 is used to control the laser 1702 and the detector array 1703 to enable them to work properly. The processor 1701 is also connected to the modulator 1704. Exemplarily, the processor 1701 provides driving voltages for the laser 1702 and the detector array 1703 respectively, and the processor 1701 can also provide an emission control signal for the laser 1702. For the description of the type of the processor 1701, please refer to Figures 2a to 2c the corresponding description of the processing chip shown, and details will not be elaborated here.

[0096] The processor 1701 is used to send a control signal to the laser 1702, and the laser 1702 is used to emit a detection optical signal for lidar detection according to the control signal. The modulator 1704 is used to modulate the detection optical signal to suppress interference between different lidars. The detection optical signal propagates along the emission direction. When the detection optical signal encounters the object to be measured, reflection occurs on the surface of the object to be measured, and the reflected echo optical signal is received by the detector array 1703 of the lidar 1700. In the embodiment of the present application, the light beam reflected by the object to be measured from the detection optical signal is called the echo optical signal. After the detector array 1703 receives the echo optical signal, it performs photoelectric conversion on the echo optical signal, that is, converts the echo optical signal into an electrical signal (hereinafter referred to as the detection electrical signal). The detector array 1703 sends the detection electrical signal to the processor 1701. The processor 1701 can obtain the position information of the object to be measured according to the detection electrical signal. Specifically, the processor 1701 can determine the position information of the object to be measured by calculating the time delay between the emission time point of the detection optical signal and the return time point of the detection electrical signal. At the same time, the lidar 1700 can also emit detection optical signals with different spatial orientations to the object to be measured (such as the adjustment of the optical signal transmission direction by the metalens array shown in the above embodiment), so as to obtain the position information of each point on the surface of the object to be measured and generate a point cloud image of the object to be measured.

[0097] Taking the laser shown in the above embodiment and applied to the lidar of a vehicle as an example, in other examples, the laser can also be applied to a fixed radar (such as a radar fixed on a road, a surveillance radar, a radar in an industrial scenario, etc.). The laser can also be applied to the radar of an unmanned transport vehicle in a logistics warehouse or the radar of a smart home appliance in a smart home (such as the smart home appliance is an automatic cleaning robot), etc., and specific limitations are not made.

[0098] This embodiment also provides a vehicle. For the description of the specific structure, please refer to Figure 18 as shown, where Figure 18 is a structural example diagram of an embodiment of the vehicle provided by this application. The vehicle shown in this example can be a car, a truck, a motorcycle, a public vehicle, a lawn mower, a recreational vehicle, a playground vehicle, a tram, a golf cart, a train, a trolley, or a drone, etc. In this embodiment, the vehicle 1800 is configured to be in a fully or partially autonomous driving mode. The vehicle shown in this embodiment includes a vehicle body, which is used to fix a sensing system 1820, an advanced driving assistance system (ADAS) 1810, a peripheral device 1830, and a computer system 1840.

[0099] The sensing system 1820 includes one or more sensors that sense environmental information about the surroundings of the vehicle 1800. For example, the sensing system 1820 may include a positioning system, where the positioning system can be any positioning system such as a global positioning system (GPS) system or a Beidou system. The sensing system 1820 also includes an inertial measurement unit (IMU), a lidar, and a camera, etc. For the description of the lidar, please refer to Figure 17 the corresponding embodiment, which is not specifically limited. The sensing system 1820 may also include sensors for monitoring the internal systems of the vehicle 1800 (such as an in-vehicle air quality monitor, a fuel gauge, an oil temperature gauge, etc.). Sensor data from one or more of these sensors can be used to detect objects and their corresponding characteristics (position, shape, orientation, speed, etc.). The positioning system can be used to estimate the geographical location of the vehicle 1800. The IMU is used to sense the position and orientation changes of the vehicle 1800 based on inertial acceleration. The IMU can be a combination of an accelerometer and a gyroscope. The lidar can use radio signals to detect objects to be measured in the surrounding environment of the vehicle 1800. For example, the objects to be measured can be pedestrians, vehicles, or buildings, etc.

[0100] The ADAS1810 senses the surrounding environment at any time during the driving process of a vehicle, collects data, identifies, detects, and tracks static and dynamic objects, and combines with navigation map data to perform system operations and analysis, so as to enable the driver to perceive potential dangers in advance and effectively improve the comfort and safety of vehicle driving. For example, the ADAS1810 can control the vehicle through the data obtained by the sensing system 120. For another example, the ADAS1810 can control the vehicle through vehicle driving-related information, where the vehicle driving-related information can be the main data (fuel consumption, engine speed, temperature, etc.), vehicle speed information, steering wheel angle information, or body attitude data on the vehicle dashboard.

[0101] The vehicle 1800 interacts with external sensors, other vehicles, other computer systems, or users through the peripheral device 1830. The peripheral device 1830 can include a wireless communication system, an in-vehicle computer, a microphone, and / or a speaker. For example, the in-vehicle computer can provide information to the user of the vehicle 1800. The user interface can also operate the in-vehicle computer to receive user input. The in-vehicle computer can be operated through a touch screen. In other cases, the peripheral device 1830 can provide a means for the vehicle 1800 to communicate with other devices located inside the vehicle. For example, the microphone can receive audio (such as voice commands or other audio inputs) from the user of the vehicle 1800. The speaker can output audio to the user of the vehicle 1800. The wireless communication system can wirelessly communicate with one or more devices directly or via a communication network.

[0102] Some or all functions of the vehicle 1800 are controlled by the computer system 1840. The computer system 1840 can control the functions of the vehicle 1800 based on inputs received from various systems (such as the sensing system 1820, the ADAS1810, the peripheral device 1830) and from the user interface. The computer system 1840 can include at least one processor that executes instructions stored in a memory.

[0103] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated here.

[0104] As described above, the above embodiments are only used to illustrate the technical solutions of the present application and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A laser, characterized in that, It includes a substrate, N emission units, and a deflection unit, where N is any integer not less than 2. The N emission units are located on the first surface of the substrate. The N emission units at least include a first emission unit and a second emission unit connected to each other. The first emission unit is used to transmit a first optical signal to the deflection unit, and the second emission unit is used to transmit a second optical signal to the deflection unit. The wavelength of the first optical signal is different from the wavelength of the second optical signal. The deflection unit is used to deflect the first optical signal and the second optical signal to the light output port of the laser.

2. The laser according to claim 1, wherein, The first emission unit and the second emission unit are arranged side by side on the first surface of the substrate, and the first emission unit is connected between the second emission unit and the deflection unit. The first emission unit includes a first gain medium, and the second emission unit includes a second gain medium. The first emission unit is used to emit the first optical signal according to the optical signal emitted by the first gain medium, and the second emission unit is used to emit the second optical signal according to the optical signal emitted by the second gain medium. The second optical signal emitted from the second emission unit passes through the first gain medium and is transmitted to the deflection unit.

3. The laser according to claim 2, wherein The first emission unit further includes a first filter located on the first surface of the substrate, and the second emission unit further includes a second filter located on the first surface of the substrate. The first filter is used to filter the optical signal emitted by the first gain medium to obtain the first optical signal, and the second filter is used to filter the optical signal emitted by the second gain medium to obtain the second optical signal.

4. The laser according to claim 3, wherein The first emission unit further includes a first optical resonator located on the first surface of the substrate, and the second emission unit further includes a second optical resonator located on the first surface of the substrate. The first gain medium and the first filter are located in the first optical resonator, and the second gain medium and the second filter are located in the second optical resonator. The first optical resonator is used to perform laser resonance on the optical signal emitted by the first gain medium to emit the first optical signal, and the second optical resonator is used to perform laser resonance on the optical signal emitted by the second gain medium to emit the second optical signal.

5. The laser according to claim 4, characterized in that, The second optical signal is transmitted out of the second optical resonator and passes through the first optical resonator to be transmitted to the deflection unit, and the first optical signal is transmitted out of the first optical resonator to be transmitted to the deflection unit.

6. The laser according to claim 5, wherein, The first optical resonator includes a first reflective layer and a second reflective layer located on the first surface of the substrate. The second optical resonator includes a third reflective layer and a fourth reflective layer located on the first surface of the substrate. The second reflective layer and the third reflective layer are connected to each other. The second optical signal is transmitted through the third reflective layer to enter the first optical resonator. The second optical signal passing through the first optical resonator is transmitted through the first reflective layer; the first optical signal is transmitted through the first reflective layer.

7. The laser according to any one of claims 2 to 6, characterized in that The wavelength of the second optical signal is greater than the wavelength of the first optical signal.

8. The laser according to claim 1, characterized in that, The first emitting unit is connected between the second emitting unit and the first surface of the substrate, and the first emitting unit is in series with the second emitting unit. The surface of the second emitting unit facing away from the first emitting unit includes an emitting electrode, and the emitting electrode is used to apply a current to the first emitting unit and the second emitting unit, so that the first emitting unit and the second emitting unit respectively emit the first optical signal and the second optical signal.

9. The laser according to claim 8, characterized in that, The first emitting unit includes a first gain medium and a first filter. The second emitting unit includes a second gain medium and a second filter. The second filter, the second gain medium, the first gain medium, and the first filter are arranged in sequence along a direction perpendicular to the first surface of the substrate. The first filter is used to filter the optical signal emitted by the first gain medium to obtain the first optical signal. The second filter is used to filter the optical signal emitted by the second gain medium to obtain the second optical signal.

10. The laser according to claim 8 or 9, characterized in that, The laser further includes a first reflective layer and a second reflective layer located on the first surface of the substrate. The first reflective layer and the second reflective layer form an optical resonator. The first emitting unit and the second emitting unit are both located in the optical resonator. The first optical signal and the second optical signal are transmitted through the first reflective layer and transmitted to the converging module.

11. The laser according to any one of claims 2 to 7, characterized in that, The N emitting units further include a third emitting unit. The first emitting unit is connected between the third emitting unit and the first surface of the substrate, and the third emitting unit is in series with the first emitting unit. The surface of the third emitting unit facing away from the first emitting unit includes an emitting electrode, and the emitting electrode is used to apply a driving current to the third emitting unit and the first emitting unit, so that the third emitting unit and the first emitting unit respectively emit a third optical signal and the first optical signal. The wavelength of the third optical signal is different from the wavelength of the first optical signal, and the wavelength of the third optical signal is different from the wavelength of the second optical signal.

12. The laser according to any one of claims 1 to 11, characterized in that, The laser further includes a reflection module located on the first surface of the substrate and a converging module located on the second surface of the substrate. The reflection module is located on the transmission optical path of the first optical signal emitted from the first emission unit and is also located on the transmission optical path of the second optical signal emitted from the second emission unit. The reflection module is configured to reflect the first optical signal and the second optical signal to the converging module, and the converging module is configured to converge the first optical signal and the second optical signal to the light output port of the laser.

13. The laser according to any one of claims 1 to 12, characterized in that, The laser further includes a multiplexer located on the first surface of the substrate. The multiplexer is located on the transmission optical path of the first optical signal emitted from the first emission unit and is also located on the transmission optical path of the second optical signal emitted from the second emission unit. The multiplexer is configured to multiplex the first optical signal and the second optical signal to obtain a multiplexed optical signal and transmit the multiplexed optical signal to the deflection unit, and the deflection unit is configured to deflect the multiplexed optical signal to the light output port of the laser.

14. A photoelectric conversion module, characterized in that, It includes a modulator, an output optical fiber, and the laser according to any one of claims 1 to 13. The modulator is respectively connected to the laser and the output optical fiber; The modulator is configured to receive a service electrical signal and receive an optical signal from the laser; The modulator is further configured to modulate the service electrical signal onto the optical signal to obtain a service optical signal and output the service optical signal through the output optical fiber.

15. A photoelectric conversion module, characterized in that, It includes a demodulator, an input optical fiber, and the laser according to any one of claims 1 to 13. The demodulator is respectively connected to the laser and the input optical fiber; The demodulator is configured to receive a service optical signal from the input optical fiber and receive an optical signal from the laser; The demodulator is further configured to perform coherent demodulation on the service optical signal according to the optical signal to obtain a service electrical signal.

16. A communication system, characterized in that, It includes a device and the optoelectronic conversion module according to claim 14. The device includes a processing chip and a connector. The processing chip is connected to the optoelectronic conversion module through the connector, and the processing chip is configured to send the service electrical signal to the optoelectronic conversion module.

17. A communication system, characterized in that, It includes a device and the optoelectronic conversion module according to claim 15. The device includes a processing chip and a connector. The processing chip is connected to the optoelectronic conversion module through the connector, and the processing chip is configured to receive the service electrical signal from the optoelectronic conversion module.

18. A radar, characterized in that, It includes a detector array, a processor, and the laser according to any one of claims 1 to 13. The processor is respectively connected to the detector array and the laser; The laser is configured to emit a detection optical signal; The detector array is configured to receive a backscattered optical signal and convert the backscattered optical signal into a detection electrical signal. The backscattered optical signal is an optical signal reflected by a detection object according to the detection optical signal; The processor is configured to obtain relevant information of the detection object according to the detection electrical signal.

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