Light-emitting device, preparation method thereof and display device

Abstract

The invention discloses a light-emitting device, a preparation method thereof and a display device, and relates to the field of display. The light-emitting device comprises an anode, a light-emitting layer, an electronic function layer and a cathode which are arranged in a stacked mode, an interface regulation and control layer is arranged between the light-emitting layer and the electronic function layer, and the interface regulation and control layer comprises first ammonium salt. In the application, firstly, the interface regulation and control layer reduces the defect density of the interface of the light-emitting layer and the electronic functional layer, and secondly, the interface regulation and control layer improves the lattice mismatch of the interface of the light-emitting layer and the electronic functional layer through the electrostatic interaction between the ammonium salt and the materials of the light-emitting layer and the electronic functional layer, thereby weakening the exciton quenching of the interface of the light-emitting layer and the electronic functional layer. In addition, the interface regulation and control layer improves energy level alignment between the light-emitting layer and the interface of the electronic function layer, and electron injection of the device is enhanced. Finally, radiation recombination luminescence and carrier balance of the device are remarkably improved, and the brightness, the service life and the long-term storage stability of the device are remarkably improved.

Description

Technical Field

[0001] This application relates to the field of display technologies, and in particular, to a light-emitting device, a method for manufacturing the light-emitting device, and a display device including the light-emitting device. Background Art

[0002] Currently, the widely used light-emitting devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technologies. QLEDs have the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors of OLEDs.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. Under the action of an electric field, the holes generated by the anode and the electrons generated by the cathode of the light-emitting diode move, are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, which excite the light-emitting molecules to finally generate visible light.

[0004] Currently, the luminous efficiency of light-emitting devices is relatively low and needs to be further improved. Summary of the Invention

[0005] In view of this, this application provides a light-emitting device, aiming to improve the problem of relatively low luminous efficiency of existing light-emitting devices.

[0006] An embodiment of this application is implemented as follows. A light-emitting device includes an anode, a light-emitting layer, an electron functional layer, and a cathode that are stacked. An interface regulation layer is provided between the light-emitting layer and the electron functional layer, and the interface regulation layer includes a first ammonium salt.

[0007] Optionally, in some embodiments of this application, the thickness of the interface regulation layer is 3 nm to 5 nm; and / or

[0008] the material of the light-emitting layer includes quantum dots and a second ammonium salt; and / or

[0009] the material of the electron functional layer includes N-type inorganic particles and a third ammonium salt.

[0010] Optionally, in some embodiments of this application, the mass ratio of the quantum dots to the second ammonium salt is 49:1 to 199:1; and / or

[0011] the mass ratio of the N-type inorganic particles to the third ammonium salt is 9:1 to 19:1; and / or

[0012] Each of the first ammonium salt, the second ammonium salt, and the third ammonium salt independently includes one or more of an organic ammonium salt and an inorganic ammonium salt.

[0013] Optionally, in some embodiments of the present application, the organic ammonium salt includes one or more of sulfonic acid ammonium salts and carboxylic acid ammonium salts, wherein the sulfonic acid ammonium salts include one or more of ammonium sulfamate, tetrabutylammonium sulfamate, tetrabutylammonium p-toluenesulfonate, tetraethylammonium trifluoromethanesulfonate, tetramethylammonium p-toluenesulfonate, ammonium heptafluoro-1-octanesulfonate, tetrabutylammonium heptadecafluorooctanesulfonate, cetyltrimethylammonium p-toluenesulfonate, ammonium chlorophenol p-toluenesulfonate, tetrabutylammonium nonafluorobutanesulfonate, and tetrabutylammonium methanesulfonate, and the carboxylic acid ammonium salts include ammonium acetate; and / or

[0014] The inorganic ammonium salts include one or more of ammonium chloride, ammonium sulfate, ammonium nitrate, ammonium nitrite, ammonium hypophosphite, and ammonium carbonate.

[0015] Optionally, in some embodiments of the present application, the average particle size of the quantum dots is 5 nm to 10 nm; and / or

[0016] The quantum dots include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of ZnO, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, and ZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, SnSeS, SnSeTe, and SnSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor materials include doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ions, M is a divalent metal cation, including Sn 2+ , Cu 2+ , Ni 2 + , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the like, and X is a halogen anion, including Cl - , Br - , I - and one or more of the like. The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMY3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2)n NH3] 2+ , where n≥2, M is a divalent metal cation, including Sn 2+ , Cu 2+ , Ni 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ one or more of the following, Y is a halogen anion, including Cl - , Br - , I - one or more of the following; and / or

[0017] The anode and the cathode each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or

[0018] The N-type inorganic particles include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or

[0019] The optoelectronic device further includes a hole functional layer disposed between the anode and the light-emitting layer. The material of the hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,One or more of N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, wherein the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V, the metal sulfides include one or more of CuS, MoS3, and WS3, the metal selenides include one or more of MoSe3 and WSe3, and the metal nitrides include p-type gallium nitride.,

[0020] Optionally, in some embodiments of the present application, the thickness of the light-emitting layer is 20 nm to 60 nm; and / or

[0021] the thickness of the anode is 40 nm to 100 nm; and / or

[0022] the thickness of the cathode is 20 nm to 50 nm; and / or

[0023] the thickness of the hole functional layer is 20 nm to 60 nm; and / or

[0024] the thickness of the electron functional layer is 20 nm to 60 nm.

[0025] Correspondingly, an embodiment of the present application further provides a method for manufacturing a light-emitting device, including:

[0026] Providing a preform of an optoelectronic device, the preform of the optoelectronic device including an anode;

[0027] Forming a light-emitting layer on the preform of the optoelectronic device;

[0028] Providing a first ammonium salt solution, disposing the first ammonium salt solution on the light-emitting layer to form an interface control layer;

[0029] Forming an electron functional layer on the interface control layer;

[0030] Forming a cathode on the electron functional layer to obtain an optoelectronic device; or,

[0031] Providing a preform of an optoelectronic device, the preform of the optoelectronic device including a cathode;

[0032] Forming an electron functional layer on the preform of the optoelectronic device;

[0033] Provide a first ammonium salt solution, and dispose the first ammonium salt solution on the electronic functional layer to form an interface regulation layer;

[0034] Form a light-emitting layer on the interface regulation layer;

[0035] Form an anode on the light-emitting layer to obtain an inverted optoelectronic device.

[0036] Optionally, in some embodiments of the present application, the optoelectronic device preform includes an anode and a hole functional layer disposed in a stacked manner; and / or

[0037] Provide a luminescent material solution, the luminescent material solution includes quantum dots, a first solvent, a second ammonium salt, and a second solvent, and dispose the luminescent material solution on the optoelectronic device preform to form the light-emitting layer; and / or

[0038] The first ammonium salt solution includes a first ammonium salt and a third solvent; and / or

[0039] Provide an electronic functional layer material solution, the electronic functional layer material solution includes N-type inorganic particles, a fourth solvent, a third ammonium salt, and a fifth solvent, and dispose the electronic functional layer material solution on the interface regulation layer to form an electronic functional layer.

[0040] Optionally, in some embodiments of the present application, the light-emitting layer is formed on the hole functional layer; and / or

[0041] The preparation method of the luminescent material solution includes:

[0042] Provide quantum dots and a first solvent, mix them to obtain a quantum dot solution;

[0043] Provide a second ammonium salt and a second solvent, mix them to obtain a second ammonium salt solution;

[0044] Infiltrate the second ammonium salt solution into the quantum dot solution to obtain a luminescent material solution;

[0045] and / or

[0046] The preparation method of the electronic functional layer material solution includes:

[0047] Provide N-type inorganic particles and a fourth solvent, mix them to obtain an N-type inorganic particle solution;

[0048] Provide a third ammonium salt and a fifth solvent, mix them to obtain a third ammonium salt solution;

[0049] Add the third ammonium salt solution to the N-type inorganic particle solution to obtain an electronic functional layer material solution.

[0050] Optionally, in some embodiments of the present application, in the first ammonium salt solution, the mass concentration of the first ammonium salt is 1.5 mg / mL to 3 mg / mL; and / or

[0051] in the quantum dot solution, the mass concentration of the quantum dots is 15 mg / mL to 40 mg / mL; and / or

[0052] in the second ammonium salt solution, the mass concentration of the second ammonium salt is 0.075 mg / mL to 0.8 mg / mL; and / or

[0053] the volume ratio of the quantum dot solution to the second ammonium salt solution is 1:1 to 2:1; and / or

[0054] in the N-type inorganic particle solution, the mass concentration of the N-type inorganic particles is

[0055] 20 mg / mL to 40 mg / mL; and / or

[0056] in the third ammonium salt solution, the mass concentration of the third ammonium salt is 1 mg / mL to 4 mg / mL; and / or

[0057] the volume ratio of the N-type inorganic particle solution to the third ammonium salt solution is 1:1 to 2:1; and / or

[0058] the first solvent includes one or more of oleylamine, dodecyl mercaptan, oleic acid, toluene, n-heptane, cyclohexane, hexane, chloroform, n-octane; and / or

[0059] each of the second solvent, the third solvent, the fourth solvent, and the fifth solvent independently includes one or more of methanol, ethanol, acetic acid, propanol, isopropanol, butanol, n-butanol, octanol, pentanol, hexanol, heptanol, ethylene glycol, propylene glycol, glycerol, and other polar solvents containing hydroxyl groups.

[0060] Optionally, in some embodiments of the present application, after the luminescent material solution is disposed on the optoelectronic device preform, a first heat treatment is further included, the temperature of the first heat treatment is 80 °C to 120 °C, and the time of the first heat treatment is 3 min to 10 min; and / or

[0061] after the first ammonium salt solution is disposed on the light-emitting layer, a second heat treatment is further included, the temperature of the second heat treatment is 100 °C to 120 °C, and the time of the second heat treatment is 10 min to 30 min; and / or

[0062] After the electronic functional layer material solution is disposed on the interface regulation layer to form an electronic functional layer, a third heat treatment is further included. The temperature of the third heat treatment is 80°C to 120°C, and the time of the third heat treatment is 10 min to 30 min.

[0063] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned light-emitting device, or a light-emitting device prepared by the above-mentioned preparation method.

[0064] In the light-emitting device provided by the present application, an interface regulation layer is disposed between the light-emitting layer and the electronic functional layer, and the interface regulation layer includes a first ammonium salt. First, the interface regulation layer reduces the defect density at the interface between the light-emitting layer and the electronic functional layer. Second, the interface regulation layer improves the lattice mismatch at the interface between the light-emitting layer and the electronic functional layer material through the electrostatic interaction between the ammonium salt and the light-emitting layer and the electronic functional layer materials, thereby weakening the interfacial exciton quenching between the light-emitting layer and the electronic functional layer. In addition, the interface regulation layer improves the energy level alignment between the light-emitting layer and the electronic functional layer interface, and the electron injection of the device is enhanced. Finally, the radiative recombination luminescence and carrier balance of the device are significantly improved, and the brightness, lifetime, and long-term storage stability of the device are significantly enhanced, which is a practical improvement strategy for realizing the commercialization of QLED devices. Description of the Drawings

[0065] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0066] Figure 1 is a schematic structural diagram of a light-emitting device provided by an embodiment of the present application;

[0067] Figure 2 is a schematic structural diagram of another light-emitting device provided by an embodiment of the present application;

[0068] Figure 3 is a flowchart of a preparation method of a normal light-emitting device provided by an embodiment of the present application;

[0069] Figure 4 is a flowchart of a preparation method of an inverted light-emitting device provided by an embodiment of the present application.

[0070] Reference Numerals:

[0071] 10 - Anode, 20 - Hole functional layer, 30 - Light-emitting layer, 40 - Interface regulation layer, 50 - Electronic functional layer, 60 - Cathode. Detailed Embodiments

[0072] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0073] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" usually refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0074] In the present application, "and / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Where A and B can be singular or plural.

[0075] In the present application, "at least one" means one or more, and "multiple" means two or more. "One or several", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single (item) or plural items. For example, "at least one (item) of a, b, or c", or, "at least one (item) of a, b, and c" can all represent: a, b, c, a - b (that is, a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0076] The various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub - ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. In addition, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0077] At present, the quantum dot light-emitting layer for light-emitting devices is a thin film stacked by quantum dot nanoparticles, and the electron transport layer is generally a thin film stacked by N-type inorganic nanoparticles. This structure is prone to lattice mismatch at the QD / ETL interface.

[0078] The technical solution of this application is as follows:

[0079] In a first aspect, please refer to Figure 1 , an embodiment of this application provides a light-emitting device, including an anode 10, a light-emitting layer 30, an electron functional layer 50, and a cathode 60 that are stacked. An interface regulation layer 40 is provided between the light-emitting layer 30 and the electron functional layer 50, and the interface regulation layer 40 includes a first ammonium salt.

[0080] In this application, an interface regulation layer 40 is provided between the light-emitting layer 30 and the electron functional layer 50, and the interface regulation layer 40 includes a first ammonium salt. First, the interface regulation layer 40 reduces the defect density at the interface between the light-emitting layer 30 and the electron functional layer 50. Second, the interface regulation layer 40 improves the lattice mismatch at the interface between the light-emitting layer 30 and the electron functional layer 50 through the electrostatic interaction between the ammonium salt and the materials of the light-emitting layer 30 and the electron functional layer 50, thereby weakening the interfacial exciton quenching between the light-emitting layer 30 and the electron functional layer 50. In addition, the interface regulation layer 40 improves the energy level alignment between the light-emitting layer 30 and the electron functional layer 50, and the electron injection of the device is enhanced. Finally, the radiative recombination luminescence and carrier balance of the device are significantly improved, and the brightness, lifespan, and long-term storage stability of the device are significantly enhanced, which is a practical improvement strategy for realizing the commercialization of QLED devices.

[0081] Further, in some embodiments, the thickness of the interface regulation layer 40 is 3 nm to 5 nm, such as 3 nm, 3.2 nm, 3.4 nm, 3.5 nm, 3.8 nm, 4 nm, 4.2 nm, 4.3 nm, 4.5 nm, 4.6 nm, 4.8 nm, 4.9 nm, 5 nm, etc. Within this thickness range, the interface regulation layer 40 can form a continuous film and there will be no surface defects. In addition, it is beneficial for electron injection.

[0082] In some embodiments, the material of the light-emitting layer 30 includes quantum dots and a second ammonium salt.

[0083] Further, in some embodiments, in the light-emitting layer 30, the mass of the quantum dots is greater than the mass of the second ammonium salt. It can be understood that in the light-emitting layer 30, the quantum dots serve as the main light-emitting material, and the second ammonium salt can passivate the dangling bonds formed on the surface of the quantum dots due to ligand detachment. Specifically, due to the small size and large specific surface area of the quantum dots, 10-80% of all their atoms are located on the surface. Only some of these surface atoms are coordinated, and there are a large number of surface defects such as dangling bonds on the surface of the quantum dots, while the second ammonium salt can passivate the surface defects of the quantum dots. When synthesizing quantum dots, organic ligands are introduced to passivate the surface dangling bonds. When the surface ligands fall off, it will expose the original or newly formed surface defects such as dangling bonds in the quantum dot material, and the second ammonium salt deposited on the surface of the quantum dots serves as a lattice template for the subsequent interface control layer 40 to further improve the lattice matching.

[0084] Further, in some embodiments, the mass ratio of the quantum dots to the second ammonium salt is 49:1 to 199:1, such as 49:1, 50:1, 55:1, 60:1, 65:1, 70:1, 75:1, 80:1, 85:1, 90:1, 95:1, 100:1, 105:1, 110:1, 115:1, 120:1, 125:1, 130:1, 135:1, 140:1, 145:1, 150:1, 155:1, 160:1, 165:1, 170:1, 175:1, 180:1, 185:1, 190:1, 195:1, 199:1, etc. Within this mass ratio range, it is beneficial for the second ammonium salt to passivate the dangling bonds formed on the surface of the quantum dots due to ligand detachment, and the second ammonium salt deposited on the surface of the quantum dots serves as a lattice template for the subsequent interface control layer 40 to further improve the lattice matching.

[0085] In some embodiments, the material of the electron function layer 50 includes N-type inorganic particles and a third ammonium salt.

[0086] Further, in some embodiments, the mass of the N-type inorganic particles is greater than the mass of the third ammonium salt. It can be understood that in the electron function layer 50, the N-type inorganic particles serve as the main material of the electron function layer 50, and the third ammonium salt passivates the abundant surface defects of the electron function layer 50. Due to the electrostatic interaction between the third ammonium salt molecules, the subsequently provided electron function layer 50 containing the third ammonium salt is anchored on the interface control layer 40, and the lattice mismatch at the interface between the light-emitting layer 30 and the electron function layer 50 is further suppressed.

[0087] Further, in some embodiments, the mass ratio of the N-type inorganic particles to the third ammonium salt is 9:1 to 19:1, such as 9:1, 10:1, 11:1, 12:1, 13:1, 14:1, 15:1, 16:1, 17:1, 18:1, 19:1, etc. Within this mass ratio range, it is beneficial for the third ammonium salt to passivate the abundant surface defects of the electron functional layer 50.

[0088] In some embodiments, the first ammonium salt, the second ammonium salt, and the third ammonium salt each independently include one or more of an organic ammonium salt and an inorganic ammonium salt.

[0089] In some embodiments, the organic ammonium salt includes one or more of an ammonium sulfonate and an ammonium carboxylate.

[0090] In some embodiments, the ammonium sulfonate includes one or more of ammonium sulfamate, tetrabutylammonium sulfamate, tetrabutylammonium p-toluenesulfonate, tetraethylammonium trifluoromethanesulfonate, tetramethylammonium p-toluenesulfonate, ammonium heptafluorooctanesulfonate, tetrabutylammonium heptadecafluorooctanesulfonate, cetyltrimethylammonium p-toluenesulfonate, ammonium chlorophenol p-toluenesulfonate, tetrabutylammonium nonafluorobutanesulfonate, and tetrabutylammonium methanesulfonate.

[0091] In some embodiments, the ammonium carboxylate includes ammonium acetate.

[0092] In some embodiments, the inorganic ammonium salt includes one or more of ammonium chloride, ammonium sulfate, ammonium nitrate, ammonium nitrite, ammonium hypophosphite, and ammonium carbonate.

[0093] In some embodiments, the material of the quantum dots includes one or several of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0094] Further, in some embodiments, the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots can be respectively selected from, but not limited to, the single-structure quantum dots being selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2.

[0095] As an example, the quantum dots of the core-shell structure include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0096] The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - one or more of them, and X is a halogen anion selected from - Cl - Br n-2 I + one or more of them. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2)

[0097] [NH3(CH2) n NH3] 2+ where n≥2, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - one or more of them, and X is a halogen anion selected from - Cl - Br

[0098] In some embodiments, the average particle size of the quantum dots is 5 nm to 10 nm, such as 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, etc.

[0099] In some embodiments, the thickness of the light-emitting layer 30 is 20 nm to 60 nm, such as 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, etc.

[0100] In some embodiments, referring to Figure 2 , the optoelectronic device further includes a hole functional layer 20, and the hole functional layer 20 is disposed between the anode 10 and the light-emitting layer 30.

[0101] In some embodiments, the anode 10 and the cathode 60 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Herein, " / " represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including a sequentially stacked AZO layer, an Ag layer, and an AZO layer.

[0102] In some embodiments, the electron functional layer 50 includes one or more of an electron injection layer and an electron transport layer.

[0103] In some embodiments, the hole functional layer 20 includes one or more of a hole injection layer and a hole transport layer.

[0104] In some embodiments, the N-type inorganic particles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a Group IIB-VIA semiconductor material, a Group IIIA-VA semiconductor material, and a Group IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The Group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The Group IIIA-VA semiconductor material includes one or more of InP and GaP. The Group IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0105] In some embodiments, the material of the hole functional layer 20 includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfides include one or more of CuS, MoS3, WS3. The metal selenides include one or more of MoSe3, WSe3. The metal nitrides include p-type gallium nitride.

[0106] In some embodiments, the thickness of the anode 10 is 40 nm to 100 nm, such as 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, etc.

[0107] In some embodiments, the thickness of the cathode 60 is 20 nm to 50 nm, such as 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, etc.

[0108] In some embodiments, the thickness of the hole functional layer 20 is 20 nm to 60 nm, such as 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, etc.

[0109] In some embodiments, the thickness of the electron functional layer 50 is 20 nm to 60 nm, such as 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, etc.

[0110] In a second aspect, please refer to Figure 3 , embodiments of the present application further provide a method for preparing an optoelectronic device, including:

[0111] S01. Provide a preform of the optoelectronic device, where the preform of the optoelectronic device includes an anode 10;

[0112] S02. Form a light-emitting layer 30 on the preform of the optoelectronic device;

[0113] S03. Provide a first ammonium salt solution, and dispose the first ammonium salt solution on the light-emitting layer 30 to form an interface regulation layer 40;

[0114] S04. Form an electron functional layer 50 on the interface regulation layer 40;

[0115] S05. Form a cathode 60 on the electron functional layer 50 to obtain the optoelectronic device.

[0116] The optoelectronic device obtained by the above method of the present application is a normal optoelectronic device.

[0117] In the method for preparing an optoelectronic device provided by the present application, the first ammonium salt solution is prepared into an interface regulation layer 40, which is located between the light-emitting layer 30 and the electron functional layer 50. By the electrostatic interaction between the first ammonium salt and the materials of the light-emitting layer 30 and the electron functional layer 50, the lattice mismatch at the interface between the light-emitting layer 30 and the electron functional layer 50 is improved, the interfacial exciton quenching between the light-emitting layer 30 and the electron functional layer 50 is alleviated, and the electron injection is enhanced by adjusting the energy level alignment of the materials of the light-emitting layer 30 and the electron functional layer 50. Finally, the radiative recombination luminescence and carrier balance of the device are significantly improved, and the brightness, lifetime, and long-term storage stability of the device are significantly enhanced, which is a practical improvement strategy for realizing the commercialization of QLED devices.

[0118] In the above S01:

[0119] In some embodiments, the optoelectronic device preform includes an anode 10 and a hole functional layer 20 which are stacked.

[0120] In the above S02:

[0121] In some embodiments, the light-emitting layer 30 is formed on the hole functional layer 20.

[0122] In some embodiments, a luminescent material solution is provided. The luminescent material solution includes quantum dots, a first solvent, a second ammonium salt, and a second solvent. The luminescent material solution is disposed on the optoelectronic device preform to form the light-emitting layer 30.

[0123] In some embodiments, the preparation method of the luminescent material solution includes:

[0124] S21: Provide quantum dots and a first solvent, and mix them to obtain a quantum dot solution;

[0125] S22: Provide a second ammonium salt and a second solvent, and mix them to obtain a second ammonium salt solution;

[0126] S23: Infuse the second ammonium salt solution into the quantum dot solution to obtain the luminescent material solution.

[0127] In some embodiments, the first solvent includes one or more of oleylamine, dodecyl mercaptan, oleic acid, toluene, n-heptane, cyclohexane, hexane, chloroform, n-octane.

[0128] In some embodiments, the second solvent includes one or more of methanol, ethanol, acetic acid, propanol, isopropanol, butanol, n-butanol, octanol, pentanol, hexanol, heptanol, ethylene glycol, propylene glycol, glycerol, and other polar solvents containing hydroxyl groups.

[0129] In some embodiments, in the quantum dot solution, the mass concentration of the quantum dots is 15 mg / mL to 40 mg / mL, such as 15 mg / mL, 16 mg / mL, 18 mg / mL, 20 mg / mL, 21 mg / mL, 23 mg / mL, 25 mg / mL, 26 mg / mL, 28 mg / mL, 29 mg / mL, 30 mg / mL, 31 mg / mL, 32 mg / mL, 34 mg / mL, 36 mg / mL, 38 mg / mL, 39 mg / mL, 40 mg / mL, etc. Within this mass concentration range, it is beneficial to the full dissolution of the quantum dots.

[0130] In some embodiments, in the second ammonium salt solution, the mass concentration of the second ammonium salt is 0.075 mg / mL to 0.8 mg / mL, such as 0.075 mg / mL, 0.08 mg / mL, 0.085 mg / mL, 0.09 mg / mL, 0.095 mg / mL, 0.1 mg / mL, 0.15 mg / mL, 0.2 mg / mL, 0.25 mg / mL, 0.3 mg / mL, 0.35 mg / mL, 0.4 mg / mL, 0.45 mg / mL, 0.5 mg / mL, 0.55 mg / mL, 0.6 mg / mL, 0.65 mg / mL, 0.7 mg / mL, 0.75 mg / mL, 0.8 mg / mL, etc. Within this mass concentration range, it can achieve sufficient passivation effect, and is also beneficial to the charge injection of quantum dots, with high luminous efficiency.

[0131] In some embodiments, the volume ratio of the quantum dot solution to the second ammonium salt solution is 1:1 to 2:1, such as 1:1, 1.2:1, 1.3:1, 1.4:1, 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2:1, etc. Within this volume ratio range, it is beneficial for the quantum dot solution and the second ammonium salt solution to be fully dissolved.

[0132] In some embodiments, the method of disposing the luminescent material solution on the optoelectronic device preform includes one or more of a first spin coating method, a first printing method, a first doctor blade coating method, a first dip coating method, a first immersion method, a first spraying method, a first roll coating method, a first casting method, a first slot die coating method, and a first strip coating method.

[0133] Further, in some embodiments, the rotation speed of the first spin coating method is 1500 r / min to 4000 r / min, such as 1500 r / min, 1800 r / min, 2000 r / min, 2200 r / min, 2400 r / min, 2600 r / min, 2800 r / min, 3000 r / min, 3100 r / min, 3200 r / min, 3500 r / min, 3600 r / min, 3800 r / min, 3900 r / min, 4000 r / min, etc. The time is 20 s to 40 s, such as 20 s, 22 s, 23 s, 25 s, 26 s, 28 s, 30 s, 31 s, 32 s, 33 s, 35 s, 36 s, 38 s, 40 s, etc.

[0134] In some embodiments, after disposing the luminescent material solution on the optoelectronic device preform, a first heat treatment is further included.

[0135] Further, in some embodiments, the temperature of the first heat treatment is 80°C to 120°C, such as 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, etc. The time of the first heat treatment is 3 min to 10 min, such as 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, etc. Within the range of the temperature and time, it is beneficial to prepare the light-emitting layer 30 with good film-forming property.

[0136] In the S03:

[0137] In some embodiments, the first ammonium salt solution includes a first ammonium salt and a third solvent.

[0138] In some embodiments, the third solvent includes one or more of methanol, ethanol, acetic acid, propanol, isopropanol, butanol, n-butanol, octanol, pentanol, hexanol, heptanol, ethylene glycol, propylene glycol, glycerol, and other polar solvents containing hydroxyl groups.

[0139] In some embodiments, in the first ammonium salt solution, the mass concentration of the first ammonium salt is 1.5 mg / mL to 3 mg / mL, such as 1.5 mg / mL, 1.6 mg / mL, 1.7 mg / mL, 1.8 mg / mL, 1.9 mg / mL, 2.0 mg / mL, 2.1 mg / mL, 2.2 mg / mL, 2.3 mg / mL, 2.4 mg / mL, 2.5 mg / mL, 2.6 mg / mL, 2.7 mg / mL, 2.8 mg / mL, 2.9 mg / mL, 3.0 mg / mL, etc. Within the range of the mass concentration, the film thickness of the interface control layer 40 spin-coated is moderate, the film-forming continuity is good, and it is beneficial for electron injection.

[0140] In some embodiments, the method of disposing the first ammonium salt solution on the light-emitting layer 30 includes one or more of a second spin coating method, a second printing method, a second doctor blade coating method, a second dip coating method, a second immersion method, a second spraying method, a second roll coating method, a second casting method, a second slot die coating method, and a second bar coating method.

[0141] Further, in some embodiments, the rotation speed of the second spin coating method is 4000 r / min to 6000 r / min, such as 4000 r / min, 4200 r / min, 4400 r / min, 4600 r / min, 4800 r / min, 5000 r / min, 5200 r / min, 5400 r / min, 5600 r / min, 5800 r / min, 6000 r / min, etc. The time is 20 s to 40 s, such as 20 s, 22 s, 23 s, 25 s, 26 s, 28 s, 30 s, 31 s, 32 s, 33 s, 35 s, 36 s, 38 s, 40 s, etc.

[0142] In some embodiments, after the first ammonium salt solution is disposed on the light-emitting layer 30, a second heat treatment is further included.

[0143] Further, in some embodiments, the temperature of the second heat treatment is 100 °C to 120 °C, such as 100 °C, 102 °C, 105 °C, 106 °C, 108 °C, 110 °C, 112 °C, 115 °C, 118 °C, 120 °C, etc. The time of the second heat treatment is 10 min to 30 min, such as 10 min, 12 min, 14 min, 16 min, 18 min, 20 min, 22 min, 24 min, 26 min, 28 min, 30 min, etc. Within the temperature and time ranges, it is beneficial to prepare the interfacial control layer 40 film with better film-forming properties.

[0144] In the S04:

[0145] In some embodiments, an electron functional layer 50 material solution is provided. The electron functional layer 50 material solution includes N-type inorganic particles, a fourth solvent, a third ammonium salt, and a fifth solvent. The electron functional layer 50 material solution is disposed on the interfacial control layer 40 to form the electron functional layer 50.

[0146] In some embodiments, the preparation method of the electron functional layer 50 material solution includes:

[0147] S41. Provide N-type inorganic particles and a fourth solvent, and mix them to obtain an N-type inorganic particle solution;

[0148] S42. Provide a third ammonium salt and a fifth solvent, and mix them to obtain a third ammonium salt solution;

[0149] S43. Add the third ammonium salt solution to the N-type inorganic particle solution to obtain the electron functional layer 50 material solution.

[0150] In some embodiments, the fourth solvent includes one or more of methanol, ethanol, acetic acid, propanol, isopropanol, butanol, n-butanol, octanol, pentanol, hexanol, heptanol, ethylene glycol, propylene glycol, glycerol, and other polar solvents containing hydroxyl groups.

[0151] In some embodiments, the fifth solvent includes one or more of methanol, ethanol, acetic acid, propanol, isopropanol, butanol, n-butanol, octanol, pentanol, hexanol, heptanol, ethylene glycol, propylene glycol, glycerol, and other polar solvents containing hydroxyl groups.

[0152] In some embodiments, in the N-type inorganic particle solution, the mass concentration of the N-type inorganic particles is 20 mg / mL to 40 mg / mL, such as 20 mg / mL, 22 mg / mL, 24 mg / mL, 26 mg / mL, 28 mg / mL, 30 mg / mL, 31 mg / mL, 32 mg / mL, 33 mg / mL, 35 mg / mL, 36 mg / mL, 38 mg / mL, 39 mg / mL, 40 mg / mL, etc. Within this mass concentration range, it is beneficial for the N-type inorganic particles to be fully dissolved.

[0153] In some embodiments, in the third ammonium salt solution, the mass concentration of the third ammonium salt is 1 mg / mL to 4 mg / mL, such as 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 1.6 mg / mL, 1.8 mg / mL, 2 mg / mL, 2.2 mg / mL, 2.6 mg / mL, 2.8 mg / mL, 3 mg / mL, 3.2 mg / mL, 3.4 mg / mL, 3.6 mg / mL, 3.8 mg / mL, 4 mg / mL, etc. Within this mass concentration range, while achieving a passivation effect, the transport ability of the electron functional layer 50 is good.

[0154] In some embodiments, the volume ratio of the N-type inorganic particle solution to the third ammonium salt solution is 1:1 to 2:1, such as 1:1, 1.2:1, 1.3:1, 1.4:1, 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2:1, etc. Within this volume ratio range, it is beneficial for the N-type inorganic particle solution and the third ammonium salt solution to be fully dissolved.

[0155] In some embodiments, the method of forming the electron functional layer 50 by disposing the electron functional layer 50 material solution on the interface control layer 40 includes one or more of a third spin coating method, a third printing method, a third scraping method, a third dip coating method, a third immersion method, a third spraying method, a third roll coating method, a third casting method, a third slot die coating method, and a third strip coating method.

[0156] Further, in some embodiments, the rotation speed of the third spin coating method is 2000 r / min to 4000 r / min, such as 2000 r / min, 2200 r / min, 2400 r / min, 2600 r / min, 2800 r / min, 3000 r / min, 3200 r / min, 3400 r / min, 3600 r / min, 3800 r / min, 4000 r / min, etc. The time is 20 s to 40 s, such as 20 s, 22 s, 23 s, 25 s, 26 s, 28 s, 30 s, 31 s, 32 s, 33 s, 35 s, 36 s, 38 s, 40 s, etc.

[0157] In some embodiments, after the material solution of the electronic functional layer 50 is disposed on the interface regulation layer 40 to form the electronic functional layer 50, a third heat treatment is further included.

[0158] Further, in some embodiments, the temperature of the third heat treatment is 80 °C to 120 °C, such as 80 °C, 82 °C, 85 °C, 86 °C, 88 °C, 90 °C, 92 °C, 95 °C, 98 °C, 100 °C, 102 °C, 105 °C, 106 °C, 108 °C, 110 °C, 112 °C, 115 °C, 118 °C, 120 °C, etc. The time of the third heat treatment is 10 min to 30 min, such as 10 min, 12 min, 14 min, 16 min, 18 min, 20 min, 22 min, 24 min, 26 min, 28 min, 30 min, etc. Within the range of the temperature and time, it is beneficial to prepare the electronic functional layer 50 with better film-forming properties.

[0159] Thirdly, please refer to Figure 4 , the embodiments of the present application further provide an inverted optoelectronic device, including:

[0160] S001. Provide an optoelectronic device preform, where the optoelectronic device preform includes a cathode 60;

[0161] S002. Form an electronic functional layer 50 on the optoelectronic device preform;

[0162] S003. Provide a first ammonium salt solution, and dispose the first ammonium salt solution on the electronic functional layer 50 to form an interface regulation layer 40;

[0163] S004. Form a light-emitting layer 30 on the interface regulation layer 40;

[0164] S005. Form an anode 10 on the light-emitting layer 30 to obtain an inverted optoelectronic device.

[0165] In the said S005:

[0166] In some embodiments, a hole functional layer 20 is formed on the light-emitting layer 30, and the anode 10 is formed on the hole functional layer 20.

[0167] Among them, the preparation methods of the cathode 60, the electron functional layer 50, the interface control layer 40, the light-emitting layer 30, the hole functional layer 20 and the anode 10 are the same as those of the above-mentioned forward optoelectronic device, and will not be elaborated here.

[0168] Fourthly, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device.

[0169] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0170] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0171] Embodiment 1

[0172] This embodiment provides a light-emitting device, and the preparation method is as follows:

[0173] The ITO is treated by UVO for 15 minutes to obtain an ITO anode. PEDOT:PSS (2 wt%) is spin-coated on the ITO anode at a rotation speed of 5000 r / min for 30 seconds, and then heated at 150 °C for 15 minutes to obtain a hole injection layer;

[0174] TFB (8 mg / mL) is spin-coated on the hole injection layer at a rotation speed of 3000 r / min for 30 seconds, and then heated at 120 °C for 10 minutes to obtain a hole transport layer;

[0175] On the hole transport layer, according to the volume ratio of the ammonium sulfamate solution to the CdSe quantum dot solution being 1:1, 0.2 mg / mL ammonium sulfamate solution is doped into 20 mg / mL QD solution, and the QD solution doped with ammonium sulfamate is spin-coated at a rotation speed of 2000 r / min for 30 seconds, and then heated at 100 °C for 5 minutes to form the light-emitting layer 30, where the solvent in the ammonium sulfamate solution is ethanol and the solvent in the QD solution is oleic acid;

[0176] On the light-emitting layer 30, ammonium sulfamate was dissolved in ethanol to prepare an ammonium salt solution with a concentration of 2 mg / mL. The ammonium sulfamate solution was spin-coated at a speed of 5000 r / min for 30 seconds, and then heated at 110 °C for 20 minutes to form an ammonium salt interface control layer 40;

[0177] On the ammonium salt interface control layer 40, according to the volume ratio of ammonium sulfamate solution to ZnO solution being 1:1, 0.3 mg / mL ammonium sulfamate solution was doped into 30 mg / mL ZnO solution. The ZnO solution doped with ammonium sulfamate was spin-coated at a speed of 3000 r / min for 30 seconds, and then heated at 100 °C for 15 minutes to form an electron functional layer 50. Among them, the solvent in the ammonium sulfamate solution was ethanol, and the solvent in the ZnO solution was ethanol;

[0178] On the electron functional layer 50, through thermal evaporation, with a vacuum degree not higher than 3×10 -4 Pa, Ag was evaporated at a speed of 1 Å / second for 200 seconds with a thickness of 20 nm to form a cathode;

[0179] Encapsulation was carried out to obtain a light-emitting device.

[0180] Example 2

[0181] This example provides a light-emitting device, and the preparation method is as follows:

[0182] After ITO was treated by UVO for 15 min, PEDOT:PSS (2 wt%) was spin-coated on the ITO substrate at a speed of 5000 r / min for 30 seconds, and then heated at 150 °C for 15 minutes;

[0183] TFB (8 mg / mL) was spin-coated at a speed of 3000 for 30 seconds, and then heated at 120 °C for 10 minutes;

[0184] According to the volume ratio of ammonium sulfamate solution to CdSe quantum dot solution being 1:1, 0.2 mg / mL ammonium sulfamate solution was doped into 20 mg / mL QD solution. The QD solution doped with ammonium sulfamate was spin-coated at a speed of 2000 r / min for 30 seconds, and then heated at 100 °C for 5 minutes. Among them, the solvent in the ammonium sulfamate solution was ethanol, and the solvent in the QD solution was oleic acid;

[0185] Ammonium sulfamate was dissolved in ethanol to prepare an ammonium salt solution with a concentration of 2 mg / mL. The ammonium sulfamate solution was spin-coated at a speed of 5000 r / min for 30 seconds, and then heated at 110 °C for 20 minutes;

[0186] ZnO solution (30 mg / mL) was spin-coated at a speed of 3000 r / min for 30 seconds, and then heated at 100 °C for 15 minutes;

[0187] By thermal evaporation, with a vacuum degree not higher than 3×10 -4 Pa, evaporate Ag, with a speed of 1 Å / s, for a time of 200 s and a thickness of 20 nm to form a cathode;

[0188] Encapsulate to obtain a light-emitting device.

[0189] Example 3

[0190] This example provides a light-emitting device, and the preparation method is as follows:

[0191] After the ITO is treated by UVO for 15 min, spin-coat PEDOT:PSS (2 wt%) on the ITO substrate at a rotation speed of 5000 r / min for 30 s, and then heat at 150 °C for 15 minutes;

[0192] Spin-coat TFB (8 mg / mL) at a rotation speed of 3000 r / min for 30 s, and then heat at 120 °C for 10 minutes;

[0193] According to the volume ratio of the ammonium sulfamate solution to the CdSe quantum dot solution being 1:1, dope a 0.2 mg / mL ammonium sulfamate solution into a 20 mg / mL QD solution, spin-coat the QD solution doped with ammonium sulfamate at a rotation speed of 2000 r / min for 30 s, and then heat at 100 °C for 5 minutes, where the solvent in the ammonium sulfamate solution is ethanol and the solvent in the QD solution is oleic acid;

[0194] Dissolve ammonium sulfamate in ethanol to prepare a 2 mg / mL ammonium salt solution, spin-coat the ammonium sulfamate solution at a rotation speed of 5000 r / min for 30 s, and then heat at 110 °C for 20 minutes;

[0195] According to the volume ratio of the ammonium sulfamate solution to the ZnO solution being 1:1, dope a 0.3 mg / mL ammonium sulfamate solution into a 30 mg / mL ZnO solution, spin-coat the ZnO solution doped with ammonium sulfamate at a rotation speed of 3000 r / min for 30 s, and then heat at 100 °C for 15 minutes, where the solvent in the ammonium sulfamate solution is ethanol and the solvent in the ZnO solution is ethanol;

[0196] By thermal evaporation, with a vacuum degree not higher than 3×10 -4 Pa, evaporate Ag, with a speed of 1 Å / s, for a time of 200 s and a thickness of 20 nm to form a cathode;

[0197] Encapsulate to obtain a light-emitting device.

[0198] Example 4

[0199] This example is basically the same as Example 1, except that in this example, ammonium sulfamate is replaced by ammonium chloride.

[0200] Example 5

[0201] This example is basically the same as Example 1, except that in this example, ammonium sulfamate is replaced by ammonium acetate.

[0202] Example 6

[0203] This example is basically the same as Example 1, except that in this example, ammonium sulfamate is replaced by tetrabutylammonium sulfamate.

[0204] Example 7

[0205] This example is basically the same as Example 1, except that in this example, ammonium sulfamate is replaced by ammonium chlorophenolsulfonate.

[0206] Example 8

[0207] This example is basically the same as Example 1, except that in this example, in the QD solution, the concentration of ammonium sulfamate is 0.075 mg / mL; when preparing the ammonium salt interface control layer 40, the concentration of ammonium sulfamate is 1.5 mg / mL; in the ZnO solution, the concentration of ammonium sulfamate is 1 mg / mL.

[0208] Example 9

[0209] This example is basically the same as Example 1, except that in this example, in the QD solution, the concentration of ammonium sulfamate is 0.8 mg / mL; when preparing the ammonium salt interface control layer 40, the concentration of ammonium sulfamate is 3 mg / mL; in the ZnO solution, the concentration of ammonium sulfamate is 4 mg / mL.

[0210] Example 10

[0211] This example is basically the same as Example 1, except that in this example, the inverted light-emitting device is prepared in the order of cathode, electron functional layer 50, ammonium salt interface control layer 40, light-emitting layer 30, hole transport layer, hole injection layer, and anode.

[0212] Example 11

[0213] This example is basically the same as Example 1, except that in this example, neither the QD solution nor the ZnO solution is doped with ammonium sulfamate.

[0214] Comparative Example 1

[0215] This comparative example is basically the same as Example 1, except that in this comparative example, neither the QD solution nor the ZnO solution is doped with ammonium sulfamate, and the salt interface control layer 40 is removed. Specifically: the step of dissolving ammonium sulfamate in ethanol to prepare an ammonium salt solution with a concentration of 2 mg / mL, spin-coating the ammonium sulfamate solution at a speed of 5000 for 30 seconds, and then heating at 110 °C for 20 minutes is removed.

[0216] Comparative Example 2

[0217] This comparative example is basically the same as Example 1, except that in this comparative example, the QD solution is not doped with ammonium sulfamate, and the salt interface control layer 40 is removed. Specifically: the step of dissolving ammonium sulfamate in ethanol to prepare an ammonium salt solution with a concentration of 2 mg / mL, spin-coating the ammonium sulfamate solution at a speed of 5000 for 30 seconds, and then heating at 110 °C for 20 minutes is removed.

[0218] Comparative Example 3

[0219] This comparative example is basically the same as Example 1, except that in this comparative example, the ZnO solution is not doped with ammonium sulfamate, and the salt interface control layer 40 is removed. Specifically: the step of dissolving ammonium sulfamate in ethanol to prepare an ammonium salt solution with a concentration of 2 mg / mL, spin-coating the ammonium sulfamate solution at a speed of 5000 for 30 seconds, and then heating at 110 °C for 20 minutes is removed.

[0220] The maximum brightness, T95, T95-1k, and current efficiency of the light-emitting devices of Examples 1 to 11 and Comparative Examples 1 to 3 were tested, and the test results are shown in Table 1.

[0221] Among them, the method for testing the maximum brightness is: using a Fosda FPD optical property measurement device, and measuring the maximum brightness through an efficiency test system built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 through LabView.

[0222] The test methods for the lifetime T95 and the lifetime T95@1000 nit are: in CDA gas, under a constant current or voltage drive, measuring the time taken for the brightness of the device to decay to a certain proportion of the maximum brightness. The time when the brightness decays to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime test cycle, the device lifetime test is usually carried out by accelerating the device aging at a high brightness and fitting the lifetime at a low brightness through a decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000 nits, and the calculation formula is:

[0223]

[0224] Among them, T95 LThe lifespan at low brightness is generally the lifespan at 1000 nits, T95 H The lifespan at high brightness is the measured lifespan, L H The maximum brightness to which the device is accelerated, L L Generally 1000 nits, A is the acceleration factor, taken as 1.7. Among them, the constant current is 1 mA.

[0225] The test method for current efficiency is: scan from 0 V to 7 V at a wavelength of 0.2 V, and use a Keithley source meter and an integrating sphere to monitor the current (A) and brightness (nit / m 2 ), to obtain the measured value of current efficiency.

[0226] Table 1

[0227]

[0228] It can be seen from Table 1 that:

[0229] Compared with the light-emitting device of Comparative Example 1, the light-emitting devices of Examples 1-11 all contain an ammonium salt interface control layer 40, while the light-emitting device of Comparative Example 1 does not contain an ammonium salt interface control layer 40. 1 h and 1000 h after the preparation of the light-emitting device, the brightness, T95 time, T95-1k time and current efficiency of the light-emitting devices of Examples 1-11 are all higher than those of Comparative Example 1, indicating that the light-emitting devices of Examples 1-11 have good light-emitting efficiency, good performance and excellent stability. This is because the ammonium salt interface control layer 40 reduces the defect density at the interface between the light-emitting layer 30 and the electron functional layer 50. In addition, the ammonium salt interface control layer 40 improves the lattice mismatch at the interface between the light-emitting layer 30 and the electron functional layer 50 through the electrostatic interaction between the ammonium salt and the materials of the light-emitting layer 30 and the electron functional layer 50, thereby weakening the interface exciton quenching between the light-emitting layer 30 and the electron functional layer 50. The radiative recombination luminescence and carrier balance of the device are significantly improved, and the brightness, lifespan and long-term storage stability of the device are significantly enhanced.

[0230] Compared with the light-emitting device of Comparative Example 2, the electronic functional layers 50 of both the light-emitting device of Example 3 and the light-emitting device of Comparative Example 2 are doped with an ammonium salt. The light-emitting device of Example 3 contains an ammonium salt interface control layer 40, while the light-emitting device of Comparative Example 2 does not contain an ammonium salt interface control layer 40. The brightness, T95 time, T95-1k time, and current efficiency of the light-emitting device of Example 3 are all higher than those of Comparative Example 2. This is because the ammonium salt interface control layer 40 of the device significantly improves the radiative recombination luminescence and carrier balance of the device, and significantly enhances the brightness, lifetime, and long-term storage stability of the device. At the same time, the ammonium salt in the electronic functional layer 50 passivates the abundant surface defects of the electronic functional layer 50. Due to the electrostatic interaction between ammonium salt molecules, the subsequently provided electronic functional layer 50 containing ammonium salt is anchored on the ammonium salt interface control layer 40, and the lattice mismatch at the interface between the light-emitting layer 30 and the electronic functional layer 50 is further suppressed, and the performance of the light-emitting device of Example 3 is further improved.

[0231] Compared with Comparative Example 3, the light-emitting layers 30 of Examples 1-2 and Examples 4-10 are all doped with an ammonium salt. The light-emitting devices of Examples 1-2 and Examples 4-10 contain an ammonium salt interface control layer 40, while the light-emitting devices of Comparative Example 3 do not contain an ammonium salt interface control layer 40. The brightness, T95 time, T95-1k time, and current efficiency of the light-emitting devices of Examples 1-2 and Examples 4-10 are all higher than those of Comparative Example 3. This is because the ammonium salt interface control layer 40 of the device significantly improves the radiative recombination luminescence and carrier balance of the device, and significantly enhances the brightness, lifetime, and long-term storage stability of the device. At the same time, an organic ligand is introduced during the synthesis of quantum dots to passivate surface dangling bonds. When the surface ligand falls off, it will expose the original or newly formed dangling bonds and other surface defects of the quantum dot material, and the ammonium salt deposited on the surface of the quantum dot further improves the lattice matching as a lattice template for the subsequently provided ammonium salt interface control layer 40. The performance of the light-emitting devices of Examples 1-2 and Examples 4-10 is further improved.

[0232] The light-emitting device provided by the embodiments of the present application, its preparation method, and the display device have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A light-emitting device, characterized in that, It includes an anod, a light-emitting layer, an electron-functional layer, and a cathode which are stacked. An interface modulation layer is disposed between the light-emitting layer and the electron-functional layer, and the interface modulation layer includes a first ammonium salt.

2. The light-emitting device according to claim 1, characterized in that, The thickness of the interface modulation layer is 3 nm to 5 nm; and / or The material of the light-emitting layer includes quantum dots and a second ammonium salt; and / or The material of the electron-functional layer includes N-type inorganic particles and a third ammonium salt.

3. The light-emitting device according to claim 2, characterized in that, The mass ratio of the quantum dots to the second ammonium salt is 49:1 to 199:1; and / or The mass ratio of the N-type inorganic particles to the third ammonium salt is 9:1 to 19:1; and / or Each of the first ammonium salt, the second ammonium salt, and the third ammonium salt independently includes one or more of an organic ammonium salt and an inorganic ammonium salt.

4. The light-emitting device according to claim 3, characterized in that, The organic ammonium salt includes one or more of a sulfonic acid ammonium salt and a carboxylic acid ammonium salt. Among them, the sulfonic acid ammonium salt includes one or more of ammonium sulfamate, tetrabutylammonium sulfamate, tetrabutylammonium p-toluenesulfonate, tetraethylammonium trifluoromethanesulfonate, tetramethylammonium p-toluenesulfonate, ammonium heptafluorooctanesulfonate, tetrabutylammonium heptadecafluorooctanesulfonate, cetyltrimethylammonium p-toluenesulfonate, ammonium chlorophenol toluenesulfonate, tetrabutylammonium nonafluorobutanesulfonate, and tetrabutylammonium methanesulfonate. The carboxylic acid ammonium salt includes ammonium acetate; and / or The inorganic ammonium salt includes one or more of ammonium chloride, ammonium sulfate, ammonium nitrate, ammonium nitrite, ammonium hypophosphite, and ammonium carbonate.

5. The light-emitting device according to claim 2, wherein, The average particle size of the quantum dots is 5 nm to 10 nm; and / or The quantum dots include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of ZnO, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, and ZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, SnSeS, SnSeTe, and SnSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor materials include doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ions, M is a divalent metal cation, including Sn 2+ , Cu 2+ , Ni 2+ , Cr 2+ , Mn 2 + , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of them, and X is a halogen anion, including Cl - , Br - , I - and one or more of them. The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMY3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2, M is a divalent metal cation, including Sn 2+ , Cu 2+ , Ni 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ one or more of the following, Y is a halogen anion, including Cl - , Br - , I - one or more of the following; and / or Each of the anode and the cathode independently includes one or several of a metal, a carbon material, and a metal oxide; the metal includes one or several of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or several of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or several of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrode includes one or several of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The N-type inorganic particles include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The optoelectronic device further includes a hole functional layer, the hole functional layer is disposed between the anode and the light-emitting layer, and the material of the hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,One or more of N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, wherein the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, MoS3, WS3, the metal selenides include one or more of MoSe3, WSe3, and the metal nitrides include p-type gallium nitride., 6. The light-emitting device according to claim 5, wherein, The thickness of the light-emitting layer is 20 nm to 60 nm; and / or The thickness of the anode is 40 nm to 100 nm; and / or The thickness of the cathode is 20 nm to 50 nm; and / or The thickness of the hole functional layer is 20 nm to 60 nm; and / or The thickness of the electron functional layer is 20 nm to 60 nm.

7. A method for preparing a light-emitting device, characterized in that, Comprising: Providing a photoelectric device preform, the photoelectric device preform including an anode; Forming a light-emitting layer on the photoelectric device preform; Providing a first ammonium salt solution, disposing the first ammonium salt solution on the light-emitting layer to form an interface regulation layer; Forming an electron functional layer on the interface regulation layer; Forming a cathode on the electron functional layer to obtain a photoelectric device; Or, Providing a photoelectric device preform, the photoelectric device preform including a cathode; Forming an electron functional layer on the photoelectric device preform; Providing a first ammonium salt solution, disposing the first ammonium salt solution on the electron functional layer to form an interface regulation layer; Forming a light-emitting layer on the interface regulation layer; Forming an anode on the light-emitting layer to obtain an inverted photoelectric device.

8. The preparation method according to claim 7, characterized in that, The photoelectric device preform includes an anode and a hole functional layer disposed in a stacked manner; and / or Providing a light-emitting material solution, the light-emitting material solution including quantum dots, a first solvent, a second ammonium salt, and a second solvent, disposing the light-emitting material solution on the photoelectric device preform to form the light-emitting layer; and / or The first ammonium salt solution includes a first ammonium salt and a third solvent; and / or Providing an electron functional layer material solution, the electron functional layer material solution including N-type inorganic particles, a fourth solvent, a third ammonium salt, and a fifth solvent, disposing the electron functional layer material solution on the interface regulation layer to form an electron functional layer.

9. The preparation method according to claim 8, characterized in that, Forming the light-emitting layer on the hole functional layer; and / or The preparation method of the light-emitting material solution includes: Providing quantum dots and a first solvent, mixing to obtain a quantum dot solution; Provide a secondary ammonium salt and a secondary solvent, mix them to obtain a secondary ammonium salt solution; Infiltrate the secondary ammonium salt solution into the quantum dot solution to obtain a luminescent material solution; and / or The preparation method of the electron functional layer material solution includes: Provide N-type inorganic particles and a fourth solvent, mix them to obtain an N-type inorganic particle solution; Provide a tertiary ammonium salt and a fifth solvent, mix them to obtain a tertiary ammonium salt solution; Add the tertiary ammonium salt solution to the N-type inorganic particle solution to obtain an electron functional layer material solution.

10. The preparation method according to claim 8, wherein In the first ammonium salt solution, the mass concentration of the first ammonium salt is 1.5 mg / mL to 3 mg / mL; and / or In the quantum dot solution, the mass concentration of the quantum dot is 15 mg / mL to 40 mg / mL; and / or In the secondary ammonium salt solution, the mass concentration of the secondary ammonium salt is 0.075 mg / mL to 0.8 mg / mL; and / or The volume ratio of the quantum dot solution to the secondary ammonium salt solution is 1:1 to 2:1; and / or In the N-type inorganic particle solution, the mass concentration of the N-type inorganic particles is 20 mg / mL to 40 mg / mL; and / or In the tertiary ammonium salt solution, the mass concentration of the tertiary ammonium salt is 1 mg / mL to 4 mg / mL; and / or The volume ratio of the N-type inorganic particle solution to the tertiary ammonium salt solution is 1:1 to 2:1; and / or The first solvent includes one or more of oleylamine, dodecyl mercaptan, oleic acid, toluene, n-heptane, cyclohexane, hexane, chloroform, n-octane; and / or The second solvent, the third solvent, the fourth solvent, and the fifth solvent each independently include one or more of methanol, ethanol, acetic acid, propanol, isopropanol, butanol, n-butanol, octanol, pentanol, hexanol, heptanol, ethylene glycol, propylene glycol, glycerol, and other polar solvents containing hydroxyl groups.

11. The preparation method according to claim 8, characterized in that, After setting the luminescent material solution on the optoelectronic device preform, it further includes a first heat treatment, the temperature of the first heat treatment is 80°C to 120°C, and the time of the first heat treatment is 3 min to 10 min; and / or After setting the first ammonium salt solution on the luminescent layer, it further includes a second heat treatment, the temperature of the second heat treatment is 100°C to 120°C, and the time of the second heat treatment is 10 min to 30 min; and / or After setting the electron functional layer material solution on the interface control layer to form an electron functional layer, it further includes a third heat treatment, the temperature of the third heat treatment is 80°C to 120°C, and the time of the third heat treatment is 10 min to 30 min.

12. A display device, characterized in that, It includes the light-emitting device according to any one of claims 1 to 6, or includes the light-emitting device prepared by the preparation method according to any one of claims 7 to 11.

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