Low-profile high-gain omnidirectional antenna based on 1 / 4 mode SIW structure

Abstract

The invention discloses a low-profile high-gain omnidirectional antenna based on a 1 / 4 mode SIW structure. The low-profile high-gain omnidirectional antenna comprises a dielectric layer and a grounding layer located below the dielectric layer. A radiation metal layer is arranged on the upper surface of the dielectric layer, and a power distribution network structure is etched on the lower surface of the grounding layer; the power distribution network structure is a one-equal-to-four type power distribution network structure; the radiation metal layer is of a 1 / 4 mode SIW structure and comprises a metal layer and a plurality of metal through holes formed in two vertical directions of the metal layer, and the metal through holes are used for connecting the metal layer and the grounding layer; four metal probes are arranged on the metal layer, and each metal probe is connected with an output port of the one-equal-division four-type power distribution network structure. According to the invention, the equal amplitude and the same phase are realized through the one-equal-division four-type feed network, and the omnidirectional characteristic is realized through the feed antenna structure; the antenna has a good omnidirectional radiation characteristic, and is suitable for the fields of wireless communication, wireless energy collection and the like.

Description

Technical Field

[0001] The present invention belongs to the technical field of wireless communication, and particularly relates to a low-profile, high-gain omnidirectional antenna based on a 1 / 4-mode SIW structure. Background Art

[0002] Omnidirectional antennas can transmit / receive electromagnetic wave information / energy in all directions and have important applications, especially in fields such as WLAN and Bluetooth. However, currently, omnidirectional antennas are mainly implemented using antennas such as monopole antennas, which have omnidirectional characteristics, usually have a relatively high profile, and are not very conducive to the integration of antenna structures and requirements such as low profile.

[0003] Omnidirectional antennas are realized through an array antenna structure form. Using a conventional microstrip antenna structure as the antenna unit, through a layered array structure, a high-gain performance is achieved, but there are problems such as a relatively large structural size and also not being very conducive to the miniaturization of the antenna. Therefore, researching and designing a high-gain, low-profile omnidirectional antenna has very important research significance. Summary of the Invention

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a low-profile, high-gain omnidirectional antenna based on a 1 / 4-mode SIW structure, which can solve technical problems such as large size, high profile, and low gain value existing in existing omnidirectional antennas.

[0005] The purpose of the present invention is achieved through the following technical solutions: A low-profile, high-gain omnidirectional antenna based on a 1 / 4-mode SIW structure, comprising a dielectric layer and a ground layer located below the dielectric layer; a radiation metal layer is provided on the upper surface of the dielectric layer, and a power distribution network structure is etched on the lower surface of the ground layer;

[0006] The power distribution network structure is a 1-equal-4 type power distribution network structure;

[0007] The radiation metal layer is a 1 / 4-mode SIW structure, including a metal layer and a plurality of metal through-holes established in two perpendicular directions of the metal layer, and the metal through-holes are used to connect the metal layer and the ground layer;

[0008] Four metal probes are provided on the metal layer, and the positions of the four metal probes correspond to the four output ports of the 1-equal-4 type power distribution network structure, and each metal probe is connected to an output port of the 1-equal-4 type power distribution network structure.

[0009] The dielectric layer uses F4B material, with a dielectric constant of 2.2, a tangent loss value of 0.001, and a thickness of 3 mm.

[0010] Compared with the prior art, the present invention has the following beneficial effects: The antenna unit of the present invention is a 1 / 4-mode SIW structure, and the omnidirectional antenna has the characteristics of compact structure and low profile; an air dielectric layer is adopted to achieve a relatively high gain value of the antenna. At the same time, a four-feed structure is adopted, and the surface current of the antenna has a symmetric relationship, and the antenna has an omnidirectional radiation pattern. The present invention has the characteristics of simple structure, low profile and high gain, and has good application prospects. The present invention solves well the problems existing in current omnidirectional antennas, such as high profile and low gain value. At the same time, a four-feed structure is adopted, which also realizes a relatively low circularity, and the antenna has great practical significance. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 FIG. is a 3D structure diagram of the antenna of the present invention;

[0012] Figure 2 FIG. is a schematic diagram of a 1-equal-4 type power distribution network structure;

[0013] Figure 3 FIG. is a schematic diagram of the structure of the radiation metal layer;

[0014] Figure 4 FIG. is a design process diagram of the radiation metal layer;

[0015] Figure 5 FIG. is a surface current distribution diagram of the antenna structure;

[0016] Figure 6 FIG. is an S11 curve diagram of the antenna;

[0017] Figure 7 FIG. is the radiation pattern of the antenna in the xoz plane at the operating frequency point of 2.45 GHz;

[0018] Figure 8 FIG. is the radiation pattern of the antenna in the yoz plane at the operating frequency point of 2.45 GHz. DETAILED DESCRIPTION OF THE INVENTION

[0019] The technical solution of the present invention will be further described below with reference to the drawings.

[0020] As Figure 1 shown, a low-profile and high-gain omnidirectional antenna based on a 1 / 4-mode SIW structure of the present invention includes a dielectric layer 3 and a ground layer 4 located below the dielectric layer 3; a radiation metal layer 1 is provided on the upper surface 2 of the dielectric layer, and a power distribution network structure 5 is etched on the lower surface of the ground layer;

[0021] The power distribution network structure 5 is a 1-equal-4 type power distribution network structure, and its structure is as Figure 2 shown;

[0022] The radiation metal layer 1 is a 1 / 4-mode SIW structure, including a metal layer and a plurality of metal vias 6 established in two perpendicular directions of the metal layer. The metal vias 6 are used to connect the metal layer to the upper surface of the ground layer 4, and its structure is as Figure 3 shown. The metal layer is divided into four parts with the same structure through the metal vias. Each part, together with the metal vias on its two sides, forms a 1 / 4-mode SIW structure unit. In this embodiment, the metal layer adopts a circular structure, and its metal vias 6 are arranged on two perpendicular diameters, dividing the metal layer into four fan-shaped structures. Each fan-shaped structure, together with the metal vias on its two sides, forms a 1 / 4-mode SIW structure unit. The 1 / 4-mode SIW structure unit adopts PCB processing technology, as Figure 4 shown. Figure 4 (a) is a 1 / 4-mode SIW structure unit, Figure 4 (b) is an array structure based on 1 / 4-mode SIW, Figure 4 (c) is the overall structure of the radiation metal layer 1. The metal layer can also adopt other shaped structures according to needs.

[0023] Four metal probes 7 are provided on the metal layer. The positions of the four metal probes 7 correspond to the four output ports of the 1-equal-4 type power distribution network structure. Each metal probe 7 is connected to an output port of the 1-equal-4 type power distribution network structure. In this embodiment, the four metal probes 7 are respectively arranged between the four regions formed by the metal vias, and the four metal probes 7 are symmetric with respect to the straight line formed by the metal vias. The equal-amplitude and in-phase four-feed antenna structure is realized through the 1-equal-4 type power distribution network, and the omnidirectional radiation pattern and lower circularity are achieved.

[0024] The dielectric layer 2 adopts F4B material, with a dielectric constant of 2.2, a tangent loss value of 0.001, and a thickness of 3 mm to improve the gain value of the antenna and broaden the working bandwidth of the antenna.

[0025] The surface current distribution of the antenna of the present invention is as Figure 5 shown. It can be seen from the figure that when the amplitudes of each excitation port are equal and in-phase, the current shows a central symmetry relationship, and the antenna has an omnidirectional radiation characteristic. The S11 curve graph of the antenna of the present invention is as Figure 6 shown. It can be obtained from the figure that the antenna of the present invention has good working characteristics at the working frequency point of 2.45 GHz and meets the basic requirements of the antenna.

[0026] The antenna structure of this embodiment connects the radiation patch structure and the feeding power distribution network through metal probes to realize a four-feed antenna structure. At the working frequency point of 2.45 GHz, the radiation patterns of the antenna in the xoz plane and the yoz plane are respectively as Figure 7 and Figure 8As shown. It can be seen from the figure that the present invention has an omnidirectional radiation pattern and at the same time has a low cross-polarization level value.

[0027] Those of ordinary skill in the art will realize that the embodiments described herein are to assist the reader in understanding the principles of the present invention, and it should be understood that the scope of protection of the present invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific deformations and combinations that do not depart from the essence of the present invention based on the technical revelations disclosed in the present invention, and these deformations and combinations are still within the scope of protection of the present invention.

Claims

1. A low-profile high-gain omnidirectional antenna based on a 1 / 4 mode SIW structure, characterized in that: It comprises a dielectric layer (3) and a grounding layer (4) located below the dielectric layer (3); a radiation metal layer (1) is provided on the upper surface (2) of the dielectric layer, and a power distribution network structure (5) is etched on the lower surface of the grounding layer; The power distribution network structure (5) is a 1-equally divided 4-type power distribution network structure; The radiation metal layer (1) is a 1 / 4 mode SIW structure, comprising a metal layer and a plurality of metal through holes (6) established in two vertical directions of the metal layer, wherein the metal through holes (6) are used to connect the metal layer and the ground layer (4); Four metal probes (7) are arranged on the metal layer, the positions of the four metal probes (7) correspond to the four output ports of the 1-equally divided 4-type power distribution network structure, and each metal probe (7) is connected to an output port of the 1-equally divided 4-type power distribution network structure.

2. According to claim 1, a low-profile high-gain omnidirectional antenna based on a 1 / 4-mode SIW structure is characterized in that: The dielectric layer (2) is made of F4B material, with a dielectric constant of 2.2, a tangent loss value of 0.001, and a thickness of 3 mm.

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