Light emitting diode and display device including the same

Abstract

The present disclosure relates to a light emitting diode and a display device including the same. There is provided a light emitting diode including a first electrode disposed on a first region of a first semiconductor layer, and a magnetic substance not overlapping an active layer and disposed on a second region of the first semiconductor layer. Further, there is provided a light emitting diode including a first electrode disposed on a first region of a first semiconductor layer, and a magnetic substance disposed on a second semiconductor layer and overlapping a second region of the first semiconductor layer.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting diode and a display device including the light-emitting diode. More specifically, for example but not limited to, a light-emitting diode having an improved assembly rate during transfer and a display device including the light-emitting diode. Background Art

[0002] In addition to the display screens of televisions or monitors, display devices are widely used in notebook computers, tablet computers, smart phones, portable display devices, and portable information devices. Display devices include liquid crystal display devices (LCDs), plasma display devices (PDPs), field emission display devices (FEDs), organic light-emitting display devices (OLEDs), and micro LED (micro light-emitting diode) display devices, etc. Liquid crystal display devices and organic light-emitting display devices use transistors as switching elements to display images. Since liquid crystal display devices do not use their own light-emitting method, light irradiated from a backlight unit provided below the liquid crystal display panel is used to display images. Since such liquid crystal display devices have a backlight unit, there are design limitations, and the brightness and response speed may be reduced. Since organic light-emitting display devices include organic materials, they are easily affected by moisture, and the reliability and service life may deteriorate.

[0003] Recently, research and development of light-emitting diode (LED) display devices using light-emitting diodes are underway, and the light-emitting diode display devices are attracting attention as next-generation displays due to their high definition and high reliability.

[0004] To implement a high-definition light-emitting diode display device, it is necessary to apply micro LEDs having a smaller size. In this case, a very large number of light-emitting diodes must be mounted on a substrate. For this purpose, an assembly method using magnetism is used. Specifically, after the electrodes of the light-emitting diodes are formed to have magnetism, an electric field can be generated by applying a voltage to the assembly substrate. When the electric field is generated, the light-emitting diodes can be assembled in the grooves of the assembly substrate through the magnetism of the electrodes of the light-emitting diodes. In this case, if a magnetic substance exists in the light-emitting diodes, the light-emitting diodes can be assembled to the assembly substrate even if a partial region of the light-emitting diodes is damaged. Therefore, there is a problem that the assembly rate of the light-emitting diodes is reduced.

[0005] The descriptions provided in the discussion of the related art section should not be regarded as prior art merely because they are mentioned in or related to that section. The discussion in the related art section may include information describing one or more aspects of the subject technology, and the descriptions in this section do not limit the present disclosure. Summary of the Invention

[0006] The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a light-emitting diode having an improved assembly rate during transfer and a display device including the light-emitting diode.

[0007] In addition to the object of the present disclosure as described above, additional objects and features of the present disclosure will be clearly understood by those skilled in the art from the following description of the present disclosure.

[0008] The object according to the present disclosure is not limited to the above object. Other objects and advantages not mentioned in the present disclosure can be understood based on the following description, and can be more clearly understood based on the embodiments according to the present disclosure. In addition, it will be easily understood that the objects and advantages according to the present disclosure can be achieved by using the means shown in the claims or combinations thereof.

[0009] According to one aspect of the present disclosure, the above and other objects can be achieved by providing a light-emitting diode including: a first semiconductor layer including a first region, a second region, and a third region; an active layer exposing the first region and the second region of the first semiconductor layer and covering the third region of the first semiconductor layer; a first electrode disposed on the first region of the first semiconductor layer; a magnetic material disposed on the second region of the first semiconductor layer; and a second electrode disposed on the third region of the first semiconductor layer, and wherein the magnetic material does not overlap with the active layer.

[0010] In addition, according to one aspect of the present disclosure, the above and other objects can be achieved by providing a light-emitting diode including: a first semiconductor layer including a first region and a second region; an active layer exposing the first region of the first semiconductor layer and covering the second region of the first semiconductor layer; a second semiconductor layer disposed on the active layer; a first electrode disposed on the first region of the first semiconductor layer; and a magnetic material and a second electrode disposed on the second semiconductor layer, and wherein the magnetic material and the second electrode overlap with the second region of the first semiconductor layer.

[0011] It should be understood that the above general description and the following detailed description of the present disclosure are both exemplary and explanatory, and are intended to provide further explanation of the claimed disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated into and constitute a part of this application. The drawings illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure. In the drawings:

[0013] Figure 1A and Figure 1B are a plan view showing a light-emitting diode according to a first exemplary embodiment of the present disclosure.

[0014] Figure 2A and Figure 2B are a cross-sectional view showing a light-emitting diode according to a first exemplary embodiment of the present disclosure.

[0015] Figure 3A and Figure 3B are a plan view showing a light-emitting diode according to a second exemplary embodiment of the present disclosure.

[0016] Figure 4 are a cross-sectional view showing a light-emitting diode according to a second exemplary embodiment of the present disclosure.

[0017] Figure 5A and Figure 5B are a plan view showing a light-emitting diode according to a third exemplary embodiment of the present disclosure.

[0018] Figure 6 are a cross-sectional view showing a light-emitting diode according to a third exemplary embodiment of the present disclosure.

[0019] Figure 7 are a plan view showing a light-emitting diode according to a fourth exemplary embodiment of the present disclosure.

[0020] Figure 8 are a cross-sectional view showing a light-emitting diode according to a fourth exemplary embodiment of the present disclosure.

[0021] Figure 9 are a plan view showing a light-emitting diode according to a fifth exemplary embodiment of the present disclosure.

[0022] Figure 10 are a cross-sectional view showing a light-emitting diode according to a fifth exemplary embodiment of the present disclosure.

[0023] Figure 11 is a cross-sectional view showing a display device according to an exemplary embodiment of the present disclosure.

[0024] Throughout the drawings and the detailed description, unless otherwise specified, the same reference numerals should be understood to refer to the same elements, features, and structures. For clarity, illustration, and convenience, the relative sizes and descriptions of these elements may be exaggerated. Detailed Implementation Modes

[0025] Reference will now be made in detail to the embodiments of the present disclosure, examples of which may be illustrated in the accompanying drawings. The progress of the described processing steps and / or operations is an example; however, the order of the steps and / or operations is not limited to that set forth herein and may be changed as known in the art, except for steps and / or operations that must occur in a specific order. The names of the various elements used in the following explanations may be chosen merely for convenience in writing the specification and thus may be different from the names used in actual products.

[0026] The advantages and features of the present disclosure and the methods for realizing them will be clarified by the following exemplary embodiments described with reference to the accompanying drawings. However, the present disclosure may be implemented in different forms and should not be construed as limited to the exemplary embodiments set forth herein. On the contrary, these exemplary embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art. Furthermore, the claims are not limited by the present disclosure.

[0027] The shapes, sizes, ratios, angles, quantities, etc. disclosed in the accompanying drawings for describing the embodiments of the present disclosure are merely examples, and thus, the present disclosure is not limited to the details shown. Throughout the specification, the same reference numerals refer to the same elements. In the following description, when a detailed description of a related known function or configuration is determined to unnecessarily obscure aspects of the present disclosure, the detailed description will be omitted. In cases where "having", "including", "comprising", "constituting", "composing", "forming", etc. described in the present disclosure are used, another part may be added unless "only" is used. Unless otherwise mentioned, terms in the singular form may include the plural form.

[0028] When constructing an element, although not explicitly described, the element is interpreted as including an error band. Any implementation described herein as an "example" is not necessarily to be construed as superior to or having an advantage over other implementations.

[0029] When describing positional relationships, for example, when a positional relationship is described as "on", "above", "over", "above", "below", "beneath", and "next to", unless "exactly" or "directly" is used, one or more parts may be provided between two other parts, that is, one or more other parts may be provided between the two parts. For example, when an element or layer is provided on another element or layer, a third layer or element may be interposed therebetween.

[0030] When describing temporal relationships, for example, the temporal precedence relationship between two events, such as "after", "subsequently", and "before", unless specifically indicated as "directly after", "immediately following", or "directly before", another event may occur in between.

[0031] It should be understood that although terms such as "first", "second", "A", "B", "(A)", "(B)", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present disclosure, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element.

[0032] As can be fully understood by those skilled in the art, the features of various embodiments of the present disclosure can be partially or wholly coupled or combined with each other, and can operate differently and be technically driven with respect to each other. The embodiments of the present disclosure can be executed independently of each other, or can be executed together in a mutually dependent relationship.

[0033] The term "at least one" should be understood to include any and all combinations of one or more of the related listed items. For example, the meaning of "at least one of the first element, the second element, and the third element" encompasses the combination of all three listed elements, the combination of any two of the three elements, and each individual element, the first element, the second element, or the third element.

[0034] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should also be understood that terms (such as those defined in a common dictionary) should be interpreted as having a meaning consistent with the meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined herein. For example, the term "part" or "unit" can be applied to, for example, a separate circuit or structure, an integrated circuit, a computational block of a circuit device, or any structure configured to perform the described functions as understood by one of ordinary skill in the art.

[0035] The features of various embodiments of the present disclosure can be combined with each other partially or wholly, and can be technically related or interoperable with each other. The embodiments can be implemented independently of each other, or can be implemented together in an associated relationship. Hereinafter, the preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0036] For ease of illustration, the proportions of the components shown in the drawings are different from the actual proportions, and thus are not limited to the proportions shown in the drawings.

[0037] Figure 1A and Figure 1B is a plan view showing a light-emitting diode 100 according to a first exemplary embodiment of the present disclosure. In Figure 1A and Figure 1B , the first direction X may be a horizontal direction or an X-axis direction. In addition, the second direction Y may be a direction perpendicular to the first direction X, and may be a vertical direction or a Y-axis direction.

[0038] Referring to Figures 1A to 2B , the light-emitting diode 100 may include a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 140, a second electrode 150, and a magnetic material 160. The embodiment is not limited thereto. As an example, at least one of the above components may be omitted, and / or one or more additional components may also be included.

[0039] Referring to Figure 1A , the upper surface of the first semiconductor layer 110 may be formed in an elliptical shape, but is not limited thereto. For example, the first semiconductor layer 110 may be formed in a circular shape or a polygonal shape. The first semiconductor layer 110 may supply electrons to the active layer 120. The first semiconductor layer 110 may be formed of an n-GaN-based semiconductor material such as GaN, AlGaN, InGaN, or AlInGaN. In addition, Si, Ge, Se, Te, C, etc. may be used as impurities for doping the first semiconductor layer 110.

[0040] The first semiconductor layer 110 may include a first region 111, a second region 112, and a third region 113. However, the embodiment is not limited thereto.

[0041] The first region 111 may be provided on one side of the first semiconductor layer 110. A part of the edge of the first region 111 may be curved. That is, the first region 111 may be a region surrounded by a curve formed to be recessed from the edge of the first semiconductor layer 110 toward the inside of the first semiconductor layer 110 and the edge of the first semiconductor layer 110. In addition, the first region 111 may be in contact with the edge of the first semiconductor layer 110. That is, a part of the edge of the first region 111 may correspond to a part of the edge of the first semiconductor layer 110. In Figure 1A , when a straight line passing through the center C of the first semiconductor layer 110 and parallel to the first direction X is used as a reference line, the first region 111 is provided below the reference line, but is not limited thereto. In addition, when a straight line passing through the center C of the first semiconductor layer 110 while parallel to the second direction Y is used as a reference line, the first region 111 may be formed on the right side of the reference line, and the second region 112 may be formed on the left side of the reference line.

[0042] The second region 112 may be formed on the other side of the first semiconductor layer 110 and may be spaced apart from the first region 111. The area of the second region 112 may be larger than the area of the first region 111, but is not limited thereto. The second region 112 may have a shape obtained by cutting a part of the first semiconductor layer 110 with a straight line parallel to the second direction Y. As Figure 1A shown, when the first semiconductor layer 110 has an elliptical shape, one side of the second region 112 may be parallel to the minor axis of the first semiconductor layer 110. In addition, one side of the first region 111 may be disposed between one end of the first semiconductor layer 110 and the center C, and one side of the second region 112 may be disposed between the other end of the first semiconductor layer 110 and the center C. In addition, the second region 112 may be in contact with the edge of the first semiconductor layer 110. That is, a part of the edge of the second region 112 may correspond to a part of the edge of the first semiconductor layer 110.

[0043] In addition to the first region 111 and the second region 112, the third region 113 may be the remaining region of the first semiconductor layer 110. The boundary region between the first region 111 and the third region 113 may have a circular shape. In addition, the boundary region between the second region 112 and the third region 113 may have a linear shape. In addition, the boundary region between the first region 111 and the third region 113 may be disposed between one end of the first semiconductor layer 110 and the center C, and the boundary region between the second region 112 and the third region 113 may be disposed between the other end of the first semiconductor layer 110 and the center C. The area of the third region 113 among the first region 111 to the third region 113 may be the largest, but is not limited thereto.

[0044] The active layer 120 may be disposed on the third region 113 of the first semiconductor layer 110. In addition, the active layer 120 may expose the first region 111 and the second region 112 of the first semiconductor layer 110. That is, the active layer 120 may have a shape in which a partial region is recessed and may expose the first region 111. The active layer 120 may have a shape in which a partial region is linear and may expose the second region 112. In addition, the active layer 120 may cover the third region 113. That is, the active layer 120 may have a shape corresponding to the shape of the third region 113, but is not limited thereto.

[0045] The active layer 120 may be a light-emitting layer. For example, the light-emitting layer may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL), but the present disclosure is not limited thereto. The active layer 120 may have a multi-quantum well (MQW) structure including a well layer and a barrier layer having a higher bandgap than the well layer. For example, the active layer 120 may have a multi-quantum well structure such as InGaN / GaN, but is not limited thereto.

[0046] Figure 1B A structure is shown in which the second semiconductor layer 130 is disposed on the active layer 120, the first electrode 140 is disposed on the first region 111 of the first semiconductor layer, the magnetic material 160 is disposed on the second region 112 of the first semiconductor layer, and the second electrode 150 is disposed on the second semiconductor layer 130.

[0047] The second semiconductor layer 130 may be disposed on the active layer 120. The second semiconductor layer 130 may cover the entire upper surface of the active layer 120. That is, the second semiconductor layer 130 may have a shape corresponding to the shape of the active layer 120. Accordingly, the second semiconductor layer 130 may expose the first region 111 and the second region 112 of the first semiconductor layer 110. That is, the second semiconductor layer 130 may expose the first electrode 140 on the first region 111 and the magnetic material 160 on the second region 112.

[0048] The second semiconductor layer 130 may be formed of a p-GaN-based semiconductor material such as GaN, AlGaN, InGaN, or AlInGaN. In addition, impurities such as Mg, Zn, Be, etc. may be used to dope the second semiconductor layer 130.

[0049] The first electrode 140 may be disposed on the first region 111 of the first semiconductor layer 110. The area of the first electrode 140 may be smaller than the area of the first region 111 of the first semiconductor layer 110, but is not limited thereto. In addition, the first electrode 140 may be formed in a shape corresponding to the shape of the first region 111. That is, a part of the edge of the first electrode 140 may have a circular shape. In addition, the end of the first electrode 140 may overlap with the end of the first semiconductor layer 110, but is not limited thereto.

[0050] The second electrode 150 may be disposed on the second semiconductor layer 130. The second electrode 150 may overlap with the center C of the first semiconductor layer 110. In addition, the second electrode 150 may have a circular shape, an elliptical shape, or a polygonal shape, but is not limited thereto.

[0051] Each of the first electrode 140 and the second electrode 150 may include a metallic material such as Au, W, Pt, Si, Ir, Ag, Cu, Ni, Ti, or Cr, and alloys thereof. Alternatively, each of the first electrode 140 and the second electrode 150 may include a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but embodiments of the present disclosure are not limited thereto.

[0052] The magnetic material 160 may be disposed on the second region 112 of the first semiconductor layer 110. The area of the magnetic material 160 may be smaller than the area of the second region 112 of the first semiconductor layer 110, but is not limited thereto. In addition, the magnetic material 160 may be formed in a shape corresponding to the shape of the second region 112 and may be spaced apart from the first electrode 140 disposed on the first region 111. That is, a part of the edge of the magnetic material 160 may have a circular shape, but embodiments of the present disclosure are not limited thereto.

[0053] For example, referring to Figure 1B , when a straight line passing through the center C of the first semiconductor layer 110 and parallel to the first direction X is used as a reference line, the first electrode 140 may be disposed below the reference line, and the magnetic material 160 and the second electrode 150 may cross the reference line, but is not limited thereto.

[0054] The magnetic material 160 may be a metallic material such as iron (Fe), nickel (Ni), cobalt (Co), lead (Pb), aluminum (Al), copper (Cu), silver (Ag), gold (Au), tungsten (W), molybdenum (Mo), etc., but is not limited thereto.

[0055] Figure 2A and Figure 2B are cross-sectional views showing a light-emitting diode 100 according to a first exemplary embodiment of the present disclosure.

[0056] Figure 2A is a cross-sectional view showing the light-emitting diode 100 corresponding to the line A-A' of Figure 1B , and Figure 2B is a cross-sectional view showing the light-emitting diode 100 corresponding to the line B-B' of Figure 1B .

[0057] As described above, the light-emitting diode 100 may include a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 140, a second electrode 150, and a magnetic material 160. In addition, the first semiconductor layer 110 may include a first region 111, a second region 112, and a third region 113, but is not limited thereto.

[0058] Referring to Figure 2A, the first semiconductor layer 110 may include a first side surface 110a, a second side surface 110b, a third side surface 110c, and a fourth side surface 110d. The first side surface 110a and the second side surface 110b may face each other, and the third side surface 110c and the fourth side surface 110d may face each other. In addition, the heights of the first side surface 110a and the second side surface 110b may be the same, and the heights of the third side surface 110c and the fourth side surface 110d may be the same. In addition, the heights of the first side surface 110a and the second side surface 110b may be the same or substantially the same, and the heights of the third side surface 110c and the fourth side surface 110d may also be the same or substantially the same, but are not limited thereto.

[0059] One side of the first region 111 may correspond to the first side surface 110a, and the other side of the first region 111 may contact the third region 113. In addition, one side of the second region 112 may correspond to the second side surface 110b, and the other side of the second region 112 may contact the third region 113. In addition, one side of the third region 113 may correspond to the third side surface 110c, and the other side of the third region 113 may correspond to the fourth side surface 110d.

[0060] Among the first region 111 to the third region 113, the thickness of the third region 113 may be the largest. That is, the third region 113 may correspond to a region protruding from the first semiconductor layer 110. In addition, the height of the upper surface of the third region 113 may be higher than the heights of the first region 111 and the second region 112. Therefore, the third side surface 110c may be in contact with the upper surface of the first region 111, and the fourth side surface 110d may be in contact with the upper surface of the second region 112. However, the embodiments of the present disclosure are not limited thereto.

[0061] As referenced above Figure 1A As described above, the boundary between the first region 111 and the third region 113 may have a curved shape. Specifically, the third region 113 having a protruding shape may be formed by etching a portion of the first semiconductor layer 110 corresponding to the first region 111. Therefore, the third side surface 110c may have a curved shape, and a portion of the third side surface 110c contacting the first region 111 may have a curved shape, but the embodiments of the present disclosure are not limited thereto.

[0062] Compared with a structure in which the third side surface 110c is formed as a flat surface, when the contact portion between the third side surface 110c and the first region 111 is bent, the possibility of damage to the contact portion between the third side surface 110c and the top surface of the first region 111 can be reduced. Therefore, the possibility of separation of the first region 111 from the light-emitting diode 100 due to damage can be reduced or minimized, and thus the defect rate of the light-emitting diode 100 can be reduced or minimized.

[0063] The active layer 120 may be disposed on the upper surface of the third region 113 of the first semiconductor layer 110, and the second semiconductor layer 130 may be disposed on the upper surface of the active layer 120.

[0064] The first electrode 140 may be disposed on the upper surface of the first region 111 of the first semiconductor layer 110. The first electrode 140 may overlap with the first region 111 of the first semiconductor layer 110. The height of the first electrode 140 may be less than the height of the third side surface 110c. That is, the first electrode 140 may not face the side surface of the active layer 120. In addition, the second electrode 150 may be disposed on the upper surface of the second semiconductor layer 130. The second electrode 150 may overlap with the third region 113 of the first semiconductor layer 110.

[0065] In addition, the light-emitting diode 100 may further include a protective layer 170.

[0066] The protective layer 170 may be formed to cover the top surface and the side surfaces of the light-emitting diode 100. Specifically, the protective layer 170 may cover all the surfaces of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130. In addition, the protective layer 170 may cover the side surfaces of the first electrode 140 and the second electrode 150 and expose a part of the top surfaces of the first electrode 140 and the second electrode 150. Specifically, the protective layer 170 may expose a part of the top surface of the first electrode 140 using the first contact hole CH1, and may expose a part of the top surface of the second electrode 150 using the second contact hole CH2. The first electrode 140 and the second electrode 150 may be electrically connected to an external wire or a driving element through the first contact hole CH1 and the second contact hole CH2.

[0067] The protective layer 170 may be formed of an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy).

[0068] The protective layer may have a structure in which an organic film and an inorganic film are alternately stacked. The inorganic film can block the penetration of moisture or oxygen. The organic film can planarize the surface of the inorganic film. When the organic film and the inorganic film are stacked in multiple layers, since the length of the movement path of moisture or oxygen increases compared to a single layer, the penetration of moisture / oxygen that affects the light-emitting diode 100 can be effectively blocked.

[0069] Referring to Figure 2B , Figure 2B FIG. shows the magnetic substance 160 of the light-emitting diode 100.

[0070] The magnetic substance 160 may overlap with the second region 112 of the first semiconductor layer 110. In addition, the magnetic substance 160 may be disposed on the upper surface of the protective layer 170 corresponding to the second region 112 of the first semiconductor layer 110. Therefore, the magnetic substance 160 can be electrically separated from the first semiconductor layer 110 through the protective layer 170.

[0071] The sum of the thickness of the protective layer 170 and the thickness of the magnetic substance 160 may be less than the height of the fourth side surface 110d, but is not limited thereto. That is, the magnetic substance 160 may not face the side surface of the active layer 120.

[0072] The magnetic substance 160 may be used in the process of assembling the light-emitting diode 100 to an assembly substrate after the light-emitting diode 100 is formed. Specifically, when an electric field is generated by applying a voltage to the assembly substrate, the light-emitting diode 100 can be assembled into the groove of the assembly substrate through the magnetic substance 160. In this case, since the magnetic substance 160 is independently spaced apart from the first electrode 140 and the second electrode 150, the assembly rate of the light-emitting diode 100 can be improved.

[0073] Specifically, when the electrodes of the light-emitting diode also serve as magnetic substances, even if a part of the light-emitting diode is damaged, the electrodes can be disposed on the light-emitting diode. In this case, the damaged light-emitting diode can be assembled in the groove of the assembly substrate. Therefore, the damaged light-emitting diode may emit unstable light, resulting in color mixing, or a short circuit may occur inside the light-emitting diode.

[0074] However, according to the present disclosure, it is disclosed that the first electrode 140 is disposed on one side of the light-emitting diode 100, and the magnetic substance 160 is disposed on the other side. Therefore, even if one of the first electrode 140 and the magnetic substance 160 is damaged, the damage of the light-emitting diode 100 can be detected.

[0075] Specifically, when the first electrode 140 of the light-emitting diode 100 is damaged, the damaged light-emitting diode 100 can be assembled to the assembly substrate through the magnetic substance 160. However, since the light-emitting diode 100 does not emit light due to the damage of the first electrode 140, the damaged light-emitting diode 100 can be detected. In addition, when the magnetic substance 160 of the light-emitting diode 100 is damaged, since the magnetic substance 160 does not exist in the light-emitting diode 100, the damaged light-emitting diode 100 may not be assembled to the assembly substrate. Therefore, the damaged light-emitting diode 100 can be detected.

[0076] Therefore, since the possibility of detecting the damaged light-emitting diode 100 increases, there is an effect of improving the assembly rate of the light-emitting diode 100.

[0077] Figure 3A and Figure 3B is a plan view showing the light-emitting diode 100 according to the second exemplary embodiment of the present disclosure.

[0078] In contrast to Figure 1A and Figure 1B except for the structures of the first semiconductor layer 110 and the magnetic substance 160, substantially the same structures are disclosed. Therefore, the same reference numerals are used for the components identical to those of the light-emitting diode 100 shown in Figure 1A and Figure 1B and repeated descriptions are omitted.

[0079] As described above, the first semiconductor layer 110 may include a first region 111, a second region 112, and a third region 113.

[0080] Figure 3A The first region 111 described in Figure 1A may have the same or substantially the same shape and characteristics as the first region 111 described in

[0081] That is, the first region 111 may be a region surrounded by a curve formed to be recessed from the edge of the first semiconductor layer 110 toward the inside of the first semiconductor layer 110 and the edge of the first semiconductor layer 110. Figure 3A The second region 112 may be provided on the other side of the first semiconductor layer 110 and may be spaced apart from the first region 111. In

[0082] A part of the edge of the second region 112 may be curved and may be spaced apart from the first region 111 at a position farthest from the first region 111. For example, referring to Figure 3A , when a straight line passing through the center C of the first semiconductor layer 110 and parallel to the first direction X is used as a reference line, the first region 111 may be disposed below the reference line, and the second region 112 may be disposed above the reference line. In addition, when a straight line passing through the center C of the first semiconductor layer 110 and parallel to the second direction Y is used as a reference line, the first region 111 may be formed on the right side of the reference line, and the second region 112 may be formed on the left side of the reference line. In addition, the first region 111, the second region 112, and the third region 113 may be disposed on a straight line.

[0083] The active layer 120 may be disposed on the third region 113 of the first semiconductor layer 110 and may have a shape corresponding to the shape of the third region 113. That is, the active layer 120 may have a shape with a partially recessed region and may expose the first region 111 and the second region 112 of the first semiconductor layer 110.

[0084] Figure 3B A structure is shown in which the second semiconductor layer 130 is disposed on the active layer 120, the first electrode 140 is disposed on the first region 111 of the first semiconductor layer, the second electrode 150 is disposed on the second semiconductor layer 130, and the magnetic material 160 is disposed on the second region 112 of the first semiconductor layer.

[0085] As described above, the second semiconductor layer 130 may have a shape corresponding to the shape of the active layer 120. In addition, the first electrode 140 may be disposed on the first region 111 of the first semiconductor layer 110, the second electrode 150 may be disposed on the second semiconductor layer 130, and the magnetic material 160 may be formed on the second region 112 of the first semiconductor layer 110. In addition, the first electrode 140, the second electrode 150, and the magnetic material 160 may be disposed on any straight line passing through the center C of the first semiconductor layer 110.

[0086] The area of the first electrode 140 may be smaller than the area of the first region 111 of the first semiconductor layer 110, and the area of the second electrode 150 may be smaller than the area of the second semiconductor layer 130. In addition, the first electrode 140 may be formed to have the same or substantially the same shape as the first region 111, but is not limited thereto. In addition, the second electrode 150 may have a circular shape, but is not limited thereto.

[0087] The area of the magnetic material 160 may be smaller than the area of the second region 112 of the first semiconductor layer 110. In addition, the magnetic material 160 may be formed to have the same or substantially the same shape as the first electrode 140, but is not limited thereto.

[0088] Compared with Figure 1A and Figure 1B the first exemplary embodiment shown, the second exemplary embodiment can increase the area of the third region 113 by reducing the area of the second region 112 of the first semiconductor layer 110. That is to say, compared with the first exemplary embodiment, the second exemplary embodiment can increase the area of the active layer 120 corresponding to the third region 113. Therefore, the second exemplary embodiment can further increase the light-emitting area.

[0089] Figure 4 FIG. is a cross-sectional view of a light-emitting diode 100 according to a second exemplary embodiment of the present disclosure. That is to say, Figure 4 corresponds to Figure 3B a cross-sectional view of the light-emitting diode 100 taken along line A-A'.

[0090] As described above, the light-emitting diode 100 may include a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 140, a second electrode 150, and a magnetic material 160. The light-emitting diode 100 may further include a protective layer 170.

[0091] The first electrode 140 may be disposed on the upper surface of the first region 111 of the first semiconductor layer 110, and the height of the first electrode 140 may be less than the height of the third side surface 110c. That is to say, the first electrode 140 may not face the side surface of the active layer 120. In addition, the magnetic material 160 may overlap with the second region 112 of the first semiconductor layer 110. In addition, the magnetic material 160 may be disposed on the upper surface of the protective layer 170. Therefore, the magnetic material 160 may be electrically separated from the first semiconductor layer 110 through the protective layer 170. In addition, the second electrode 150 may be disposed on the upper surface of the second semiconductor layer 130. The second electrode 150 may overlap with the third region 113 of the first semiconductor layer 110.

[0092] As described above with reference to Figure 2A the first exemplary embodiment discloses reducing the possibility of damaging the portion where the third side surface 110c contacts the first region 111 by forming a curved portion. In the second exemplary embodiment, similar to the structure of the third side surface 110c and the first region 111, the contact portion between the fourth side surface 110d and the second region 112 is formed in a curved shape. Therefore, the possibility of damaging the portion where the fourth side surface 110d and the upper surface of the second region 112 contact each other can be reduced. Therefore, the second exemplary embodiment can further prevent the light-emitting diode 100 from being damaged.

[0093] Figure 5A and Figure 5B is a plan view showing a light-emitting diode according to a third exemplary embodiment of the present disclosure.

[0094] Compared with Figure 3A and Figure 3B except for the structures of the first semiconductor layer 110 and the magnetic material 160, the third exemplary embodiment discloses substantially the same or essentially the same structures. Accordingly, the same reference numerals are used for components identical to those of the light-emitting diode 100 shown in Figure 3A and Figure 3B and repeated descriptions are omitted.

[0095] Referring to Figures 5A to 6 , the first semiconductor layer 110 may include a first region 111 and a second region 112.

[0096] Figure 5A The first region 111 described in Figure 3A may have the same or substantially the same shape and characteristics as the first region 111 described in

[0097] That is, the first region 111 may be a region surrounded by a curve formed to be recessed from the edge of the first semiconductor layer 110 toward the inside of the first semiconductor layer 110 and the edge of the first semiconductor layer 110.

[0098] The second region 112 may be the region in the first semiconductor layer 110 other than the first region 111. The boundary region between the first region 111 and the second region 112 may have a circular shape. The area of the second region 112 may be larger than the area of the first region 111.

[0099] Figure 5B shows such a structure: wherein the second semiconductor layer 130 is disposed on the active layer 120, the first electrode 140 is disposed on the first region 111 of the first semiconductor layer, and the second electrode 150 and the magnetic material 160 are disposed on the second semiconductor layer 130.

[0100] The second semiconductor layer 130 may have a shape corresponding to the shape of the active layer 120. In addition, the first electrode 140 may be disposed on the first region 111 of the first semiconductor layer 110, and the second electrode 150 and the magnetic material 160 may be disposed on the second semiconductor layer 130. In addition, the first electrode 140, the second electrode 150, and the magnetic material 160 may be spaced apart from each other, and the first electrode 140, the second electrode 150, and the magnetic material 160 may be disposed on any straight line passing through the center C of the first semiconductor layer 110, but is not limited thereto.

[0101] The magnetic material 160 may be disposed away from the first electrode 140. For example, referring to Figure 5B , when a straight line parallel to the first direction X passes through the center C of the first semiconductor layer 110 as a reference line, the first electrode 140 may be disposed below the reference line, and the magnetic material 160 may be disposed above the reference line. In addition, when a straight line parallel to the second direction Y and passing through the center C of the first semiconductor layer 110 at the same time is used as a reference line, the first electrode 140 may be disposed on the right side of the reference line, and the magnetic material 160 may be disposed on the left side of the reference line. In addition, the magnetic material 160 may be formed in the same or substantially the same shape as the first electrode 140, but is not limited thereto. In addition, the area of the first electrode 140 may be smaller than the area of the first region 111 of the first semiconductor layer 110, but is not limited thereto. In addition, the first electrode 140 may be formed in a shape corresponding to the shape of the first region 111.

[0102] Compared with Figure 3A and Figure 3B shown in the second exemplary embodiment, the third exemplary embodiment discloses forming the magnetic material 160 on the second semiconductor layer 130. Therefore, the area for disposing the magnetic material 160 on the second region 112 of the first semiconductor layer 110 can be omitted, and thus the area of the active layer 120 can be further increased. Therefore, the third exemplary embodiment can further increase the light emitting area.

[0103] Figure 6 is a cross-sectional view of the light emitting diode 100 according to the third exemplary embodiment of the present disclosure. That is, Figure 6 is a cross-sectional view of the light emitting diode 100 corresponding to Figure 5B the line A-A' of

[0104] As described above, the light emitting diode 100 may include a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 140, a second electrode 150, and a magnetic material 160. In addition, the light emitting diode 100 may further include a protective layer 170. In addition, the first semiconductor layer 110 may include a first region 111 and a second region 112.

[0105] Reference Figure 6 ,The first semiconductor layer 110 may include a first side surface 110a, a second side surface 110b, and a third side surface 110c. The first side surface 110a and the second side surface 110b may face each other. In addition, the heights of the first side surface 110a and the second side surface 110b may be the same or substantially the same.

[0106] One side of the first region 111 may correspond to the first side surface 110a, and the other side of the first region 111 may be in contact with the second region 112. In addition, one side of the second region 112 may correspond to the second side surface 110b, and the other side of the second region 112 may be in contact with the first region 111. However, the embodiments are not limited thereto.

[0107] The thickness of the second region 112 may be greater than the thickness of the first region 111. That is, the second region 112 may correspond to a region protruding from the first semiconductor layer 110. In addition, the height of the upper surface of the second region 112 may be higher than the height of the first region 111. Therefore, the third side surface 110c may be in contact with the upper surface of the first region 111. However, the embodiments are not limited thereto.

[0108] As described above with reference to Figure 5A what has been described, the boundary between the first region 111 and the second region 112 may have a curved shape. Therefore, the third side surface 110c may have a curved shape, and the portion of the third side surface 110c in contact with the first region 111 may have a curved shape. Therefore, the possibility of separation of the first region 111 from the light-emitting diode 100 due to damage can be reduced or minimized, and thus the defect rate of the light-emitting diode 100 can be reduced or minimized.

[0109] The active layer 120 may be disposed on the upper surface of the second region 112 of the first semiconductor layer 110, and the second semiconductor layer 130 may be disposed on the upper surface of the active layer 120. That is, the active layer 120 and the second semiconductor layer 130 may overlap the second region 112 of the first semiconductor layer 110.

[0110] The first electrode 140 may be disposed on the upper surface of the first region 111 of the first semiconductor layer 110, and the second electrode 150 may be disposed on the upper surface of the second semiconductor layer 130. That is, the second electrode 150 may overlap with the second region 112 of the first semiconductor layer 110. In addition, the protective layer 170 may be disposed to cover the upper surfaces and side surfaces of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130. In addition, the protective layer 170 may cover the side surfaces of the first electrode 140 and the second electrode 150, and expose a part of the top surfaces of the first electrode 140 and the second electrode 150. Specifically, the protective layer 170 may expose a part of the top surface of the first electrode 140 using the first contact hole CH1, and may expose a part of the top surface of the second electrode 150 using the second contact hole CH2. The first electrode 140 and the second electrode 150 may be electrically connected to an external wire or a driving element through the first contact hole CH1 and the second contact hole CH2.

[0111] The magnetic material 160 may be disposed on the upper surface of the protective layer 170. Thus, the magnetic material 160 may be electrically separated from the first semiconductor layer 110 and the second semiconductor layer 130 through the protective layer 170. In addition, the magnetic material 160 may overlap with the second region 112 of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130. That is, the magnetic material 160 may be disposed at a position higher than the first electrode 140 and the second electrode 150.

[0112] Compared with Figure 4 the second exemplary embodiment shown, the third exemplary embodiment discloses forming the magnetic material 160 at the uppermost end of the light-emitting diode 100. That is, compared with the second exemplary embodiment including the magnetic material 160 disposed on the stepped region of the first semiconductor layer 110, the stepped region for arranging the magnetic material 160 may be omitted in the third exemplary embodiment. Therefore, since the stepped region of the first semiconductor layer 110 can be minimized, the possibility of damaging the light-emitting diode 100 can be further reduced.

[0113] Figure 7 is a plan view showing a light-emitting diode according to a fourth exemplary embodiment of the present disclosure. Compared with Figure 5A and Figure 5B except for the structure of the magnetic material 160, substantially the same or substantially the same structure is disclosed. Therefore, the same reference numerals are used for elements identical to the components of the light-emitting diode 100 shown in Figure 5A and Figure 5B and repeated descriptions are omitted.

[0114] Refer to Figure 7, the magnetic material 160 may be disposed on the second semiconductor layer 130. In addition, the magnetic material 160 may be formed in a shape surrounding the second electrode 150. In addition, the magnetic material 160 may have a circular shape, an elliptical shape, or an annular shape, and a partial region of the circle, a partial region of the ellipse, or a partial region of the annulus may be spaced apart from each other. As Figure 7 shown, when the second electrode 150 has a circular shape, the magnetic material 160 may have an annular shape having a constant radius from the center of the second electrode 150, but is not limited thereto. In addition, the magnetic material 160 may be spaced apart from the second electrode 150.

[0115] Since the magnetic material 160 according to the fourth exemplary embodiment of the present disclosure is disposed at the center of the light-emitting diode 100, the light-emitting diode 100 can be assembled more stably during the process of assembling the light-emitting diode 100 onto an assembly substrate. In addition, compared with a structure in which the magnetic material 160 is formed to be biased to one side of the light-emitting diode 100 rather than the center, the light generated in the active layer 120 can be emitted more uniformly.

[0116] Figure 8 is a cross-sectional view showing a light-emitting diode according to the fourth exemplary embodiment of the present disclosure. That is, Figure 8 is corresponding to Figure 7 a cross-sectional view of the light-emitting diode 100 taken along line A-A'.

[0117] As described above, the light-emitting diode 100 may include a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 140, a second electrode 150, and a magnetic material 160. In addition, the light-emitting diode 100 may further include a protective layer 170. In addition, the first semiconductor layer 110 may include a first region 111 and a second region 112.

[0118] Referring to Figure 8 , the magnetic material 160 may be disposed on the upper surface of the protective layer 170. Therefore, the magnetic material 160 can be electrically separated from the first semiconductor layer 110 and the second semiconductor layer 130 through the protective layer 170. In addition, the magnetic material 160 may overlap with the second region 112 of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130. That is, the magnetic material 160 may be disposed at a position higher than the first electrode 140 and the second electrode 150.

[0119] Compared with Figure 6 the third exemplary embodiment shown, the fourth exemplary embodiment discloses a substantially identical or substantially identical structure except for the magnetic material 160. As Figure 8 shown, the magnetic material 160 is disposed to surround the second electrode 150.Figure 9 is a plan view showing a light emitting diode according to a fifth exemplary embodiment of the present disclosure. Compared with Figure 7 , except for the structures of the first semiconductor layer 110 and the first electrode 140, structures that are substantially the same or basically the same are disclosed. Therefore, the same reference numerals are used for elements that are the same as the elements of the light emitting diode 100 shown in Figure 7 , and repeated descriptions are omitted.

[0120] Referring to Figures 9 to 10 , the first semiconductor layer 110 may include a first region 111, a second region 112, and a third region 113.

[0121] The first region 111 may be provided on one side of the first semiconductor layer 110, and the second region 112 may be provided on the other side of the first semiconductor layer 110. In addition, the third region 113 may be a region excluding the first region 111 and the second region 112 from the first semiconductor layer 110. However, the embodiment is not limited thereto.

[0122] The first region 111 and the second region 112 may be regions surrounded by curves formed by being recessed from the edge of the first semiconductor layer 110 toward the inside of the first semiconductor layer 110. The first region 111 and the second region 112 may be spaced apart from each other. In addition, when a straight line passing through the center C of the first semiconductor layer 110 and parallel to the first direction X is used as a reference line, the first region 111 and the second region 112 may be provided on the reference line.

[0123] The first electrode 140 may include a first sub - electrode 141 and a second sub - electrode 142. The first sub - electrode 141 may be provided in the first region 111 of the first semiconductor layer 110, and the second sub - electrode 142 may be provided in the second region 112 of the first semiconductor layer 110. That is, the first sub - electrode 141 may overlap with the first region 111 of the first semiconductor layer 110, and the second sub - electrode 142 may overlap with the second region 112 of the first semiconductor layer 110.

[0124] The first sub - electrode 141 may be formed in a shape corresponding to the first region 111 of the first semiconductor layer 110, and the second sub - electrode 142 may be formed in a shape corresponding to the second region 112 of the first semiconductor layer 110. That is, a part of the edge of each of the first sub - electrode 141 and the second sub - electrode 142 may have a circular shape, but is not limited thereto.

[0125] The end of each of the first sub - electrode 141 and the second sub - electrode 142 may be spaced apart from the end of the first semiconductor layer 110, but is not limited thereto. In addition, the first sub - electrode 141 and the second sub - electrode 142 may be formed of the same material. In addition, asFigure 9 As shown, the first sub - electrode 141 and the second sub - electrode 142 may have the same shape, but may also have different shapes.

[0126] When a straight line passing through the center C of the first semiconductor layer 110 and parallel to the first direction X is used as a reference line, the light - emitting diode 100 may have a structure symmetric with respect to the reference line. In addition, when a straight line passing through the center C of the first semiconductor layer 110 and parallel to the second direction Y is used as a reference line, the light - emitting diode 100 may have a structure symmetric with respect to the reference line.

[0127] Figure 10 is a cross - sectional view of a light - emitting diode according to a fifth exemplary embodiment of the present disclosure. That is, Figure 10 corresponds to Figure 9 a cross - sectional view of the light - emitting diode 100 along line A - A'.

[0128] As described above, the light - emitting diode 100 may include a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 140, a second electrode 150, and a magnetic material 160. In addition, the light - emitting diode 100 may further include a protective layer 170. The first semiconductor layer 110 may include silicon (such as amorphous silicon (a - Si), polycrystalline silicon (poly - Si), or low - temperature polycrystalline silicon), or may include an oxide (such as indium gallium zinc oxide (IGZO)), but the embodiments of the present disclosure are not limited thereto.

[0129] Referring to Figure 10 , the first semiconductor layer 110 may include a first side surface 110a, a second side surface 110b, a third side surface 110c, and a fourth side surface 110d. The first side surface 110a and the second side surface 110b may face each other and be spaced apart from each other, and the third side surface 110c and the fourth side surface 110d may face each other and be spaced apart from each other. In addition, the first side surface 110a and the second side surface 110b may have the same or substantially the same height, and the third side surface 110c and the fourth side surface 110d may have the same or substantially the same height, but are not limited thereto.

[0130] As described above, the first semiconductor layer 110 may include a first region 111, a second region 112, and a third region 113. One side of the first region 111 may correspond to the first side surface 110a, and the other side of the first region 111 may be in contact with the third region 113. In addition, one side of the second region 112 may correspond to the second side surface 110b, and the other side of the second region 112 may be in contact with the third region 113.

[0131] The thickness of the third region 113 among the first region 111 to the third region 113 may be the largest. That is to say, the third region 113 may correspond to the region protruding from the first semiconductor layer 110. However, the embodiments are not limited thereto.

[0132] The active layer 120 may be disposed on the upper surface of the third region 113 of the first semiconductor layer 110, and the second semiconductor layer 130 may be disposed on the upper surface of the active layer 120. However, the embodiments are not limited thereto.

[0133] The first electrode 140 may be disposed on the upper surfaces of the first region 111 and the second region 112 of the first semiconductor layer 110. As described above, the first electrode 140 may include a first sub - electrode 141 and a second sub - electrode 142.

[0134] The first sub - electrode 141 may be disposed on the upper surface of the first region 111 of the first semiconductor layer 110, and the second sub - electrode 142 may be disposed on the upper surface of the second region 112 of the first semiconductor layer 110. That is to say, the first sub - electrode 141 may overlap with the first region 111 of the first semiconductor layer 110, and the second sub - electrode 142 may overlap with the second region 112 of the first semiconductor layer 110. The height of the first sub - electrode 141 may be less than the height of the third side surface 110c, and the height of the second sub - electrode 142 may be less than the height of the fourth side surface 110d. That is to say, the first sub - electrode 141 and the second sub - electrode 142 may not face the side surfaces of the active layer 120.

[0135] The second electrode 150 may be disposed on the upper surface of the second semiconductor layer 130. The second electrode 150 may overlap with the third region 113 of the first semiconductor layer 110. However, the embodiments are not limited thereto.

[0136] The protective layer 170 may be formed to cover the top surface and the side surfaces of the light - emitting diode 100. Specifically, the protective layer 170 may cover all the surfaces of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130. In addition, the protective layer 170 may cover the side surfaces of the first electrode 140 and the second electrode 150 and expose a partial region of the top surface. However, the embodiments are not limited thereto.

[0137] Specifically, the protective layer 170 may expose a part of the upper surface of the first sub - electrode 141 using the first contact hole CH1, and may expose a part of the upper surface of the second sub - electrode 142 using the third contact hole CH3. In addition, the protective layer 170 may expose a part of the upper surface of the second electrode 150 using the second contact hole CH2. The first electrode 140 and the second electrode 150 may be electrically connected to an external wire or a driving element using the first contact hole CH1 to the third contact hole CH3.

[0138] In this case, a fifth exemplary embodiment of the present disclosure discloses a structure in which the first electrode 140 includes a first sub-electrode 141 and a second sub-electrode 142. Therefore, even if either the first sub-electrode 141 or the second sub-electrode 142 is damaged, the other sub-electrode can be used to drive the light-emitting diode 100.

[0139] Figure 11 is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Figure 11 Shows any one pixel.

[0140] Referring to Figure 11 , a pixel according to an exemplary embodiment of the present disclosure may include a light-emitting diode 100, a substrate 200, a thin-film transistor 210, an interlayer insulating layer 220, a passivation layer 230, a first planarization layer 240, a second planarization layer 250, a bank 260, a common voltage line 300, a reflective layer 400, an adhesive layer 500, and a connection electrode 600. However, the embodiments are not limited thereto.

[0141] The light-emitting diode 100 may have Figures 1A to 10 the structure of any one of the light-emitting diodes 100 described in Figure 11 Disclosed Figure 6 the structure of the light-emitting diode 100 of the third exemplary embodiment shown in

[0142] Although Figure 11 shows a structure in which the light-emitting diode 100 includes a magnetic material 160, it is not limited thereto. For example, the magnetic material 160 may be removed after the light-emitting diode 100 is transferred onto the substrate 200. According to the present disclosure, since the magnetic material 160 is formed on the protective layer 170 and separated from the first electrode 140 and the second electrode 150, the magnetic material 160 can be removed without damaging the light-emitting diode 100.

[0143] The substrate 200 may be formed of glass, plastic, or a flexible polymer film, but is not limited thereto. For example, the flexible polymer film may be made of any one of polyethylene terephthalate (PET), polycarbonate (PC), acrylonitrile-butadiene-styrene copolymer (ABS), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyethersulfone (PES), cycloolefin copolymer (COC), triacetyl cellulose (TAC) film, polyvinyl alcohol (PVA) film, polyimide (PI) film, and polystyrene (PS), which is only an example and is not necessarily limited thereto. According to an exemplary embodiment of the present disclosure, the display device may be formed as a top-emission type that emits the emitted light upward. Therefore, not only transparent materials but also opaque materials can be used as the material of the substrate 200.

[0144] The thin film transistor 210 may be disposed on the substrate 200. The thin film transistor 210 may include a gate electrode 211, a semiconductor layer 212, a gate insulating layer 213, a source electrode 214, and a drain electrode 215.

[0145] The gate electrode 211 of the thin film transistor 210 may be disposed on the substrate 200. In addition, the semiconductor layer 212 may be disposed on the gate electrode 211. The semiconductor layer 212 may include a polysilicon semiconductor or an oxide semiconductor. In addition, when the semiconductor layer 212 includes an oxide semiconductor, the semiconductor layer 212 may include at least one oxide of IGZO (indium-gallium-zinc-oxide), IZO (indium-zinc-oxide), IGTO (indium-gallium-tin-oxide), and IGO (indium-gallium-oxide). The gate electrode 211 may be formed of a conductive material such as copper Cu, aluminum Al, molybdenum Mo, nickel Ni, titanium Ti, chromium Cr, or an alloy thereof, but is not limited thereto.

[0146] In order to insulate the gate electrode 211 and the semiconductor layer 212, the gate insulating layer 213 may be disposed between the gate electrode 211 and the semiconductor layer 212. For example, the gate insulating layer 213 may be an inorganic layer. The gate insulating layer 213 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or a multi-layer thereof. In addition, Figure 11 A bottom gate structure in which the semiconductor layer 212 is formed on the gate electrode 211 is disclosed, but is not limited thereto. For example, a top gate structure in which the gate electrode 211 is formed on the semiconductor layer 212 may be disclosed. However, the embodiments are not limited thereto.

[0147] The source electrode 214 and the drain electrode 215 may be disposed on the semiconductor layer 212 while facing each other. However, the embodiments are not limited thereto.

[0148] The common voltage line 300 may be disposed on the gate insulating layer 213. The common voltage line 300 may apply a common voltage to the light emitting diode 100. In addition, the common voltage line 300 may be formed of the same or substantially the same material as the source electrode 214 and the drain electrode 215, but is not limited thereto.

[0149] The interlayer insulating layer 220 may be disposed on the source electrode 214, the drain electrode 215, and the common voltage line 300. Contact holes exposing portions of the source electrode 214 and the common voltage line 300 may be formed in the interlayer insulating layer 220. In addition, the interlayer insulating layer 220 may be formed of an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiOxNy).

[0150] The reflective layer 400 may be disposed on the interlayer insulating layer 220. The reflective layer 400 may reflect the light emitted from the light-emitting diode 100 toward the substrate 200 to the upper part of the display device. In addition, the reflective layer 400 may be formed of a metallic material having a high reflectivity.

[0151] The passivation layer 230 may be disposed on the thin-film transistor 210 and the reflective layer 400. The passivation layer 230 may compensate for the step difference caused by the thin-film transistor 210 and the reflective layer 400 to form the upper region above the thin-film transistor 210 into a flat surface. In addition, the passivation layer 230 may be formed of an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. In addition, the passivation layer 230 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multi-layer of SiOx and SiNx. However, the embodiments are not limited thereto.

[0152] The adhesive layer 500 may be disposed on the passivation layer 230. The adhesive layer 500 may overlap with the reflective layer 400. In addition, the adhesive layer 500 may fix the light-emitting diode 100. In addition, the adhesive layer 500 may be formed of a thermosetting material or a photocuring material, but is not limited thereto. The adhesive layer 500 has good adhesion or adhesiveness to the light-emitting diode 100. For example, the adhesive layer 500 may include a foam pad, a double-sided tape, an adhesive, etc., but the embodiments of the present disclosure are not limited thereto. For example, the adhesive layer 500 may include epoxy resin, acrylic resin, silicone resin, or polyurethane, but the embodiments of the present disclosure are not limited thereto. For example, the adhesive layer 500 may include a polyurethane-based material that has relatively ductile characteristics compared to acrylic in acrylic and polyurethane.

[0153] The first planarization layer 240 may be disposed on the interlayer insulating layer 220. The first planarization layer 240 may be formed to surround a part of the side surface of the light-emitting diode 100. In addition, the first planarization layer 240 may expose the upper surface of the first electrode 140 of the light-emitting diode 100. That is, the height of the upper surface of the first planarization layer 240 may be lower than the height of the upper surface of the first electrode 140 of the light-emitting diode 100.

[0154] The first planarization layer 240 may be formed of an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene, but the embodiments are not limited thereto.

[0155] The first connection electrode 610 may be disposed on the first planarization layer 240. The first connection electrode 610 may be electrically connected to the common voltage line 300 by using a third contact hole CH3 formed in the interlayer insulating layer 220, the passivation layer 230, and the first planarization layer 240. The first connection electrode 610 may include a metal material such as Au, W, Pt, Si, Ir, Ag, Cu, Ni, Ti, or Cr and alloys thereof. Alternatively, the first connection electrode 610 may include a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0156] The second planarization layer 250 may be disposed on the first planarization layer 240. The second planarization layer 250 may be formed to surround the remaining area of the side surface of the light emitting diode 100 that is not covered by the first planarization layer 240. In addition, the second planarization layer 250 may fill the inside of the third contact hole CH3 and expose the upper surface of the second electrode 150 of the light emitting diode 100. That is, the height of the upper surface of the second planarization layer 250 may be lower than the height of the upper surface of the second electrode 150 of the light emitting diode 100. The second planarization layer 250 may be formed of the same or substantially the same material as the first planarization layer 240, but is not limited thereto.

[0157] The second connection electrode 620 may be disposed on the second planarization layer 250. The second connection electrode 620 may be electrically connected to the source electrode 214 of the thin film transistor 210 by using a fourth contact hole CH4 formed in the interlayer insulating layer 220, the passivation layer 230, the first planarization layer 240, and the second planarization layer 250. The second connection electrode 620 may be made of the same or substantially the same material as the first connection electrode 610, but is not limited thereto.

[0158] Therefore, different voltage levels applied to each of the source electrode 214 of the thin film transistor 210 and the common voltage line 300 are transmitted to the first electrode 140 and the second electrode 150 by using the first connection electrode 610 and the second connection electrode 620, so that the light emitting diode 100 can emit light.

[0159] Figure 11 It is disclosed that the thin film transistor 210 is spaced apart from the light emitting diode 100, but is not limited thereto. For example, the thin film transistor 210 and the light emitting diode 100 may be disposed to vertically overlap each other.

[0160] The bank portion 260 may be disposed on the second planarization layer 250. The bank portion 260 may fill the interior of the fourth contact hole CH4. In addition, the bank portion 260 may be spaced apart from the light emitting diode 100. The bank portion 260 may be formed of an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. Alternatively, the bank portion 260 may include an inorganic insulating material such as silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide, etc.

[0161] According to the present disclosure, the following beneficial effects can be obtained.

[0162] According to the present disclosure, a plurality of light conversion layers may be formed such that light efficiency can be improved and reflection caused by external light can be reduced.

[0163] The display device according to one or more exemplary embodiments of the present disclosure may be applied to mobile devices, video telephones, smart watches, watch phones, wearable devices, foldable devices, rollable devices, bendable devices, flexible devices, curved devices, variable devices, sliding devices, electronic notepads, e-books, portable multimedia players (PMPs), personal digital assistants (PDAs), MP3 players, mobile medical devices, desktop personal computers (PCs), laptop PCs, netbook computers, workstations, navigation devices, automotive navigation devices, automatic display devices, automotive devices, theater devices, theater display devices, televisions, wallpaper display devices, signage devices, game consoles, notebook computers, monitors, cameras, camcorders, household appliances, etc., but the embodiments of the present disclosure are not limited thereto.

[0164] It will be apparent to those skilled in the art that the above present disclosure is not limited by the above embodiments and the drawings, and various substitutions, modifications, and variations can be made to the present disclosure without departing from the technical concept or scope of the present disclosure. Therefore, the scope of the present disclosure is not limited by the present disclosure, and it is intended that all variations or modifications derived from the meaning, scope, and equivalent concepts of the claims fall within the scope of the claims.

[0165] The above various embodiments may be combined to provide further embodiments. If necessary, aspects of the embodiments may be modified to adopt concepts of various patents, applications, and publications to provide further embodiments.

[0166] According to the above detailed description, these and other changes may be made to the embodiments. Generally, in the appended claims, the terms used should not be construed as limiting the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments and the full scope of equivalents to which these claims are entitled. Therefore, the claims are not limited by the present disclosure.

[0167] Cross - reference to related applications

[0168] This application claims the benefit and priority of Korean Patent Application No. 10 - 2023 - 0192900, filed on December 27, 2023, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein.

Claims

1. A light emitting diode, comprising: A first semiconductor layer, the first semiconductor layer comprising a first region, a second region and a third region; an active layer, the active layer exposing the first region and the second region of the first semiconductor layer and covering the third region of the first semiconductor layer; a first electrode, the first electrode being disposed on the first region of the first semiconductor layer; a magnetic substance, wherein the magnetic substance is disposed on the second region of the first semiconductor layer; as well as a second electrode, the second electrode being disposed on the third region of the first semiconductor layer, Wherein, the magnetic material does not overlap with the active layer.

2. The light emitting diode according to claim 1, wherein: The first electrode is formed in a shape corresponding to a shape of the first region, and an area of ​​the first electrode is smaller than an area of ​​the first region.

3. The light emitting diode according to claim 1, wherein: The magnetic substance has a circular shape or a shape corresponding to a shape of the second region, and an area of ​​the magnetic substance is smaller than an area of ​​the second region.

4. The light emitting diode according to claim 1, wherein: At least one of a boundary between the first region and the third region and a boundary between the second region and the third region is curved.

5. The light emitting diode according to claim 4, wherein: The boundary between the first region and the third region and the boundary between the second region and the third region are all curved.

6. The light emitting diode according to claim 1, wherein: The magnetic substance is not in direct contact with the first semiconductor layer.

7. The light emitting diode according to claim 1, further comprising a protective layer disposed between the second region of the first semiconductor layer and the magnetic substance, in, The protection layer covers a portion of the area of ​​the first electrode and a portion of the area of ​​the second electrode.

8. The light emitting diode according to claim 1, wherein: The first area is arranged on one side of the third area, The second area is arranged on the other side of the third area, and The first region and the second region are spaced apart from each other.

9. The light emitting diode according to claim 1, wherein: The height of the first region is the same as the height of the second region, and The height of the third region is higher than the height of the first region and the height of the second region.

10. A light emitting diode, comprising: A first semiconductor layer, the first semiconductor layer comprising a first region and a second region; an active layer, the active layer exposing the first region of the first semiconductor layer and covering the second region of the first semiconductor layer; a second semiconductor layer, wherein the second semiconductor layer is disposed on the active layer; a first electrode, the first electrode being disposed on the first region of the first semiconductor layer; as well as A magnetic substance and a second electrode are provided on the second semiconductor layer, wherein the magnetic substance and the second electrode overlap with the second region of the first semiconductor layer.

11. The light emitting diode according to claim 10, wherein: A boundary between the first region and the second region is curved.

12. The light emitting diode according to claim 10, wherein: The magnetic substance is not in contact with the first semiconductor layer and the second semiconductor layer.

13. The light emitting diode according to claim 10, further comprising a protective layer, wherein the protective layer is disposed between the second semiconductor layer and the magnetic substance. in, The protection layer covers a portion of the area of ​​the first electrode and a portion of the area of ​​the second electrode.

14. The light emitting diode according to claim 10, wherein: The first electrode, the second electrode and the magnetic substance are arranged on the same straight line, and The second electrode is disposed between the first electrode and the magnetic substance.

15. The light emitting diode according to claim 14, wherein: The magnetic substance is spaced apart from the second electrode and surrounds the second electrode.

16. The light emitting diode according to claim 14, wherein: The magnetic substance is disposed at the center of the light emitting diode.

17. The light emitting diode according to claim 15, wherein: The first semiconductor layer further includes a third region exposed by the active layer, The first electrode includes a first sub-electrode and a second sub-electrode, The first sub-electrode is disposed on the first region, and the second sub-electrode is disposed on the third region.

18. The light emitting diode according to claim 10, wherein: The magnetic substance is spaced apart from the first electrode and the second electrode.

19. A display device, comprising: A common voltage line and a thin film transistor, wherein the common voltage line and the thin film transistor are arranged on a substrate; an insulating layer, the insulating layer being disposed on the common voltage line and the thin film transistor; as well as a light emitting diode, the light emitting diode being disposed on the insulating layer, and Wherein, the light emitting diode comprises: A first semiconductor layer, the first semiconductor layer comprising a first region, a second region and a third region; an active layer, the active layer being disposed on the third region of the first semiconductor layer, and the active layer not existing in the first region and the second region of the first semiconductor layer; a first electrode, the first electrode being disposed on the first region of the first semiconductor layer; a magnetic substance disposed on the second region of the first semiconductor layer; and a second electrode, the second electrode being disposed on the third region of the first semiconductor layer, wherein the magnetic material does not overlap with the active layer, and wherein the first electrode of the light emitting diode is electrically connected to the common voltage line through a first connecting electrode, and The second electrode of the light emitting diode is electrically connected to the thin film transistor through a second connecting electrode.

20. The display device according to claim 19, further comprising: a first planarization layer, the first planarization layer being disposed on the insulating layer and surrounding a first portion of a side surface of the light emitting diode; as well as a second planarization layer, the second planarization layer being disposed on the first planarization layer and surrounding a remaining second portion of the side surface of the light emitting diode, Wherein, the first connecting electrode is arranged on the first planarization layer, and The second connecting electrode is disposed on the second planarization layer.

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