Member for semiconductor manufacturing apparatus

Abstract

A member (10) for a semiconductor manufacturing device is provided with a ceramic plate (20), a plug arrangement hole (24), a porous plug (50), and an adhesive layer (60). The upper surface of the ceramic plate (20) is provided with a wafer carrying surface (21). The plug arrangement hole (24) passes through the ceramic plate (20) in the vertical direction, and has a truncated cone space in which the area of an upper opening is larger than the area of a lower opening. The porous plug (50) is a truncated cone-shaped member disposed in the plug placement hole (24) and having an upper surface area larger than a lower surface area. The adhesive layer (60) is provided between the inner peripheral surface of the plug arrangement hole (24) and the outer peripheral surface of the porous plug (50).

Description

Technical Field

[0001] The present invention relates to a component for a semiconductor manufacturing apparatus. Background Art

[0002] Conventionally, as a component for a semiconductor manufacturing apparatus, a component having an electrostatic chuck with a wafer placement surface on its upper surface is known. For example, the electrostatic chuck of Patent Document 1 is obtained by inserting a porous plug having a frustum shape into a bottomed recess of a frustum-shaped space provided on the lower surface of a ceramic plate, fixing it with an adhesive, and then bonding the lower surface of the ceramic plate and a metal substrate. The electrostatic chuck of Patent Document 2 is obtained by integrating a cylindrical porous plug with a through hole of a cylindrical space formed in a ceramic plate by sintering, and then bonding the lower surface of the ceramic plate and a metal substrate.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-101773

[0006] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2019-29384 Summary of the Invention

[0007] However, in the electrostatic chuck of Patent Document 1, since the bottomed recess for accommodating the porous plug is provided on the lower surface of the ceramic plate, there is a problem that it cannot be easily replaced when the porous plug needs to be replaced. In addition, in the electrostatic chuck of Patent Document 2, since the porous plug and the through hole are integrated by sintering, there is also a problem that it cannot be easily replaced when the porous plug needs to be replaced. Here, in the electrostatic chuck of Patent Document 2, although it is also possible to consider fixing the cylindrical porous plug to the through hole of the cylindrical space with an adhesive without using sintering, when bonding, the adhesive easily flows down, and thus, bubbles that extend long in the vertical direction are likely to be generated inside the adhesive. If such bubbles are generated, there is a possibility that discharge occurs inside the bubbles when the wafer is processed by plasma, and the back surface of the wafer is burned.

[0008] The present invention has been made to solve the above problems, and its main object is to be able to easily replace a plug that allows gas flow in the vertical direction and to make it less likely to generate discharge around the plug.

[0009] [1] The component for a semiconductor manufacturing apparatus of the present invention includes:

[0010] a ceramic plate having a wafer placement surface on its upper surface;

[0011] A plug configuration hole that penetrates the ceramic plate in the vertical direction and has a frustum-shaped space with an upper opening area larger than the lower opening area;

[0012] A plug having a frustum shape, which is disposed in the plug configuration hole, allows gas flow in the vertical direction, and has an upper surface area larger than the lower surface area;

[0013] An adhesive layer provided between the inner peripheral surface of the plug configuration hole and the outer peripheral surface of the plug;

[0014] A conductive substrate that is joined to the lower surface of the ceramic plate by a joining layer; and

[0015] A gas supply path provided in the substrate and the joining layer to supply gas to the plug.

[0016] For this component for a semiconductor manufacturing apparatus, when it is necessary to replace the plug, the adhesive layer can be cut, melted or softened, and the plug can be pulled out upward from the plug configuration hole of the ceramic plate. Additionally, a new plug can be inserted from above the plug configuration hole and bonded to the plug configuration hole. Therefore, the plug can be easily replaced. Further, when an adhesive layer is provided between the inner peripheral surface of the plug configuration hole and the outer peripheral surface of the plug, since these surfaces are tapered, the adhesive is not likely to flow down. Therefore, compared with the case where these surfaces are vertical surfaces, it is less likely to generate bubbles (bubbles of a size that causes discharge when processing a wafer using plasma) in the adhesive layer. Therefore, when processing a wafer using plasma, it is less likely to cause discharge around the plug (adhesive layer).

[0017] It should be noted that in this specification, the present invention is sometimes described using up and down, left and right, front and back, etc. However, up and down, left and right, front and back are merely relative positional relationships. Therefore, when the orientation of the component for a semiconductor manufacturing apparatus is changed, up may become left or right, or left or right may become up, and these cases are also included in the technical scope of the present invention.

[0018] [2] In the above-mentioned component for a semiconductor manufacturing apparatus (the component for a semiconductor manufacturing apparatus described in the above [1]), a space allowing the plug to enter may be provided at a position in the gas supply path that faces the plug. Accordingly, when the plug is disposed in the plug configuration hole, even if the plug configuration hole or the plug has manufacturing errors, the manufacturing errors can be absorbed by the space allowing the plug to enter.

[0019] [3] Among the components for semiconductor manufacturing apparatuses (components for semiconductor manufacturing apparatuses described in [1] or [2] above), the elevation angle of the inner peripheral surface of the plug arrangement hole and the elevation angle of the outer peripheral surface of the plug are preferably 65° or more and 85° or less. Accordingly, when a bonding layer is provided between the inner peripheral surface of the plug arrangement hole and the outer peripheral surface of the plug, the adhesive easily spreads uniformly, and thus, bubbles are less likely to be generated or hardly generated in the bonding layer. Therefore, the effect of preventing discharge from occurring around the plug (bonding layer) is improved.

[0020] [4] Among the components for semiconductor manufacturing apparatuses (components for semiconductor manufacturing apparatuses described in any one of [1] to [3] above), the bonding layer preferably does not have bubbles with a maximum length in the vertical direction exceeding 0.2 mm. If the maximum length of the bubbles in the vertical direction exceeds 0.2 mm, there is a possibility of discharge occurring inside the bubbles when the wafer is processed using plasma. However, if the maximum length of the bubbles in the vertical direction does not exceed 0.2 mm, there is almost no possibility of discharge occurring inside the bubbles.

[0021] [5] Among the components for semiconductor manufacturing apparatuses (components for semiconductor manufacturing apparatuses described in any one of [1] to [4] above), the bonding layer preferably does not have bubbles. Accordingly, the effect of preventing discharge from occurring around the plug (bonding layer) is further improved. Description of the Drawings

[0022] Figure 1 is a longitudinal sectional view of the component 10 for semiconductor manufacturing apparatuses.

[0023] Figure 2 is a top view of the ceramic plate 20.

[0024] Figure 3 is Figure 1 a partial enlarged view of.

[0025] Figure 4 is a manufacturing process diagram of the component 10 for semiconductor manufacturing apparatuses.

[0026] Figure 5 is a longitudinal sectional view of the component 110 for semiconductor manufacturing apparatuses. Detailed Description of the Preferred Embodiments

[0027] Next, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 is a longitudinal sectional view of the component 10 for semiconductor manufacturing apparatuses, Figure 2 is a top view of the ceramic plate 20, Figure 3 is Figure 1 a partial enlarged view of.

[0028] The component 10 for a semiconductor manufacturing apparatus includes: a ceramic plate 20, a plug arrangement hole 24, a substrate 30, a metal bonding layer 40, and a porous plug 50.

[0029] The ceramic plate 20 is a ceramic circular plate (for example, with a diameter of 300 mm and a thickness of 5 mm) such as a sintered alumina body or a sintered aluminum nitride body. The upper surface of the ceramic plate 20 is a wafer placement surface 21. Electrodes 22 are provided inside the ceramic plate 20. As Figure 2 shown, a sealing band 21a is formed along the outer edge on the wafer placement surface 21 of the ceramic plate 20, and a plurality of circular small protrusions 21b are formed on the entire surface. The sealing band 21a and the circular small protrusions 21b have the same height, and the height is, for example, several μm to several tens of μm. The electrodes 22 are planar mesh electrodes used as electrostatic electrodes and can apply a DC voltage. When a DC voltage is applied to the electrodes 22, the wafer W is adsorbed and fixed to the wafer placement surface 21 (specifically, the upper surfaces of the sealing band 21a and the circular small protrusions 21b) by electrostatic adsorption force; when the application of the DC voltage is released, the adsorption and fixation of the wafer W to the wafer placement surface 21 are released. It should be noted that the portion of the wafer placement surface 21 where the sealing band 21a and the circular small protrusions 21b are not provided is referred to as a reference surface 21c.

[0030] The plug arrangement hole 24 is a through hole that penetrates the ceramic plate 20 in the vertical direction and faces the gas hole 34 of the substrate 30. The plug arrangement hole 24 penetrates the electrodes 22 in the vertical direction, however, the electrodes 22 are not exposed on the inner peripheral surface of the plug arrangement hole 24. The plug arrangement hole 24 is a tapered hole having a frustum-shaped space with an upper opening area smaller than a lower opening area. The elevation angle α ( Figure 3 ) of the inner peripheral surface of the plug arrangement hole 24 is preferably 55° or more and 85° or less, and more preferably 65° or more and 85° or less. The plug arrangement hole 24 is, as Figure 2 shown, provided at multiple locations on the ceramic plate 20 (for example, at multiple locations provided at equal intervals along the circumferential direction).

[0031] The substrate 30 is a circular plate with good thermal conductivity (a circular plate having a diameter equal to or larger than the diameter of the ceramic plate 20). Inside the substrate 30, a refrigerant flow path 32 for circulating a refrigerant (e.g., an electrically insulating liquid such as a fluorine-based inert liquid) and a gas hole 34 for supplying gas to the porous plug 50 are formed. The gas hole 34 is provided so as to penetrate the substrate 30 in the vertical direction and has a large-diameter portion 34a at the upper side. The large-diameter portion 34a includes the lower opening of the plug arrangement hole 24 when viewed from above. The refrigerant flow path 32 is formed in one stroke from the inlet to the outlet over the entire surface of the substrate 30 when viewed from above. As the material of the substrate 30, for example, composite materials, metals, etc. can be cited. As the composite material, a composite material of metal and ceramic, etc. can be cited. As the composite material of metal and ceramic, Metal matrix composite (MMC), Ceramic matrix composite (CMC), etc. can be cited. As a specific example of this composite material, a material containing Si, SiC, and Ti, a material obtained by impregnating Al and / or Si into a SiC porous body, etc. can be cited. The material containing Si, SiC, and Ti is called SiSiCTi, the material obtained by impregnating Al into a SiC porous body is called AlSiC, and the material obtained by impregnating Si into a SiC porous body is called SiSiC. As the metal, Mo, etc. can be cited. As the material of the substrate 30, a substance having a thermal expansion coefficient close to that of the material of the ceramic plate 20 is preferable. The substrate 30 also serves as an RF electrode. Specifically, an upper electrode (not shown) is disposed above the wafer placement surface 21, and when high-frequency power is applied between the parallel plate electrodes composed of the upper electrode and the substrate 30, plasma is generated.

[0032] The metal bonding layer 40 bonds the lower surface of the ceramic plate 20 and the upper surface of the substrate 30. For example, the metal bonding layer 40 is formed by TCB (Thermal compression bonding). TCB is a well-known method in which a metal bonding material is sandwiched between two components to be bonded, and the two components are pressure-bonded in a state heated to a temperature below the solidus temperature of the metal bonding material. The metal bonding layer 40 can be a layer formed of solder or metal brazing material. The metal bonding layer 40 has a through hole 42. The through hole 42 is provided at a position opposed to the large-diameter portion 34a of the gas hole 34. The through hole 42 is provided coaxially with the large-diameter portion 34a, and the diameter of the through hole 42 is the same as the diameter of the large-diameter portion 34a. In this specification, "the same" includes not only the case of being exactly the same but also the case of being substantially the same (e.g., the case falling within the tolerance range, etc.) (the same applies hereinafter). It should be noted that the gas hole 34 and the through hole 42 correspond to the gas supply path of the present invention.

[0033] The porous plug 50 is fixed to the plug arrangement hole 24. The porous plug 50 is an electrically insulating component that allows gas to flow in the vertical direction. The porosity of the porous plug 50 is preferably 30% or more, and the average pore diameter is preferably 20 μm or more. The porous plug 50 is a frustum-shaped component with an upper surface area larger than the lower surface area. The elevation angle β of the outer peripheral surface of the porous plug 50 is the same as the elevation angle α of the inner peripheral surface of the plug arrangement hole 24. A bonding layer 60 is provided between the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24. The bonding layer 60 does not have bubbles (e.g., bubbles with a height of 2 mm or more in the vertical direction) of a size that causes discharge when the wafer W is processed using plasma. Examples of the material for the bonding layer 60 include acrylic resin, silicone resin, epoxy resin, etc. As the material for the porous plug 50, for example, ceramics can be cited. Specifically, a porous body made of the same material as the ceramic plate 20 can be used. The upper surface 50a of the porous plug 50 is exposed at the upper opening of the plug arrangement hole 24 and is in the same plane as the reference plane 21c. In this specification, "the same" includes not only the case of being completely the same but also the case of being substantially the same (e.g., within the tolerance range, etc.) (the same hereinafter). The lower surface 50b of the porous plug 50 is exposed at the lower opening of the plug arrangement hole 24.

[0034] Next, a usage example of the component 10 for a semiconductor manufacturing apparatus configured as described above will be described. First, with the component 10 for a semiconductor manufacturing apparatus disposed in a chamber (not shown), the wafer W is placed on the wafer placement surface 21. Then, the inside of the chamber is evacuated using a vacuum pump and adjusted to a specified vacuum degree. A DC voltage is applied to the electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, and the wafer W is adsorbed and fixed to the wafer placement surface 21 (specifically, the upper surface of the sealing tape 21a and the upper surface of the circular protrusion 21b). Next, the inside of the chamber is set to a reaction gas atmosphere at a specified pressure (e.g., several tens to several hundreds of Pa). In this state, a high-frequency voltage is applied between an upper electrode (not shown) provided at the top portion in the chamber and the substrate 30 of the component 10 for a semiconductor manufacturing apparatus to generate plasma. The surface of the wafer W is processed using the generated plasma. The refrigerant circulates in the refrigerant flow path 32 of the substrate 30. A backside gas is introduced from a gas cylinder (not shown) into the gas hole 34. As the backside gas, a heat conduction gas (e.g., helium, etc.) is used. The backside gas passes through the gas hole 34, the through hole 42, and the porous plug 50 and is supplied and sealed into the space between the back surface of the wafer W and the reference plane 21c of the wafer placement surface 21. Due to the presence of this backside gas, heat conduction between the wafer W and the ceramic plate 20 is efficiently performed.

[0035] Next, based on Figure 4 , a manufacturing example of the component 10 for a semiconductor manufacturing apparatus will be described. Figure 4This is a manufacturing process diagram of a component 10 for a semiconductor manufacturing apparatus. First, a ceramic plate 20, a substrate 30, and a metal bonding material 90 ( Figure 4 (A)) are prepared. The ceramic plate 20 has electrodes 22 built therein and is provided with plug arrangement holes 24. The substrate 30 has a refrigerant flow path 32 and gas holes 34. The gas holes 34 have large-diameter portions 34a at the upper side. The metal bonding material 90 has through holes 92 at positions opposed to the large-diameter portions 34a of the gas holes 34.

[0036] Next, the metal bonding material 90 is sandwiched between the lower surface of the ceramic plate 20 and the upper surface of the substrate 30 to form a laminate. At this time, the laminate is formed such that the plug arrangement holes 24 of the ceramic plate 20, the through holes 92 of the metal bonding material 90, and the gas holes 34 of the substrate 30 are coaxial. Then, the laminate is pressed and bonded at a temperature below the solidus temperature of the metal bonding material 90 (for example, at a temperature above the temperature obtained by subtracting 20°C from the solidus temperature and below the solidus temperature), and then returned to room temperature (TCB). Accordingly, the metal bonding material 90 and the through holes 92 respectively become a metal bonding layer 40 and through holes 42, and a bonded body 94 in which the ceramic plate 20 and the substrate 30 are bonded by the metal bonding layer 40 is obtained ( Figure 4 (B)). It should be noted that as the metal bonding material 90, an Al-Mg-based bonding material or an Al-Si-Mg-based bonding material can be used. The metal bonding material 90 is preferably a bonding material having a thickness of about 100 μm.

[0037] Next, a porous plug 50 having a frustum shape is prepared ( Figure 4 (B)). The height of the porous plug 50 is the same as the frustum space, that is, the depth of the plug arrangement hole 24 (i.e., the height of the ceramic plate 20). An adhesive 70 is applied at least once along the circumferential direction of the outer peripheral surface of the porous plug 50. The adhesive 70 can be an organic adhesive or an inorganic adhesive. The porous plug 50 coated with the adhesive 70 is inserted into the plug arrangement hole 24. At this time, the porous plug 50 is rotated or moved up and down so that the adhesive 70 spreads along the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24. Accordingly, the adhesive 70 spreads uniformly such that there are no air bubbles in the gap between the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24.

[0038] When the porous plug 50 is inserted into the plug arrangement hole 24, the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24 are joined by the adhesive 70. In this state, the upper surface of the porous plug 50 coincides with the upper surface of the ceramic plate 20 (reference surface 21c). A plurality of porous plugs 50 with different heights are prepared. Therefore, according to the actual height of the ceramic plate 20 (which has individual differences due to manufacturing errors), a porous plug is selected from the plurality of prepared porous plugs 50 with different heights such that when the porous plug 50 is completely inserted into the plug arrangement hole 24, the upper surface of the porous plug 50 coincides with the upper surface of the ceramic plate 20 (reference surface 21c). After that, the adhesive 70 is cured to form the adhesive layer 60, and the component 10 for a semiconductor manufacturing apparatus is obtained ( Figure 4 (C)).

[0039] In the component 10 for a semiconductor manufacturing apparatus described in detail above, when it is necessary to replace the porous plug 50, the adhesive layer 60 can be cut, melted or softened, and the porous plug 50 can be pulled out upward from the plug arrangement hole 24. In addition, a new porous plug 50 can be inserted from above the plug arrangement hole 24 and bonded to the plug arrangement hole 24. Therefore, the porous plug 50 can be easily replaced.

[0040] In addition, when the adhesive layer 60 is provided between the inner peripheral surface of the plug arrangement hole 24 and the outer peripheral surface of the porous plug 50, since these surfaces are tapered surfaces, the adhesive 70 does not easily flow down. Therefore, compared with the case where these surfaces are vertical surfaces, it is less likely to generate bubbles (bubbles of a size that causes discharge when the wafer W is processed by plasma) in the adhesive layer 60. Therefore, when the wafer W is processed by plasma, it is less likely to generate discharge around the porous plug 50 (adhesive layer 60).

[0041] Furthermore, a space (through-hole 42 and large-diameter portion 34a) that allows the porous plug 50 to enter is provided at a position facing the porous plug in the gas hole 34 and the through-hole 42 that constitute the gas supply path. Therefore, when the porous plug 50 is arranged in the plug arrangement hole 24, even if the plug arrangement hole 24 or the porous plug 50 has manufacturing errors, the manufacturing errors can be absorbed by the space that allows the porous plug 50 to enter. In contrast, when the plug arrangement hole 24 has a bottom surface, the porous plug 50 will hit its bottom surface, and thus the manufacturing errors cannot be absorbed.

[0042] In addition, the elevation angle α of the inner peripheral surface of the plug configuration hole 24 and the elevation angle β of the outer peripheral surface of the porous plug 50 are preferably the same, and are preferably 55° or more and 85° or less. Accordingly, when the adhesive layer 60 is provided between the inner peripheral surface of the plug configuration hole 24 and the outer peripheral surface of the porous plug 50, the adhesive 70 is likely to expand uniformly. Therefore, no bubbles (bubbles of a size that causes discharge when the wafer W is processed using plasma) or almost no bubbles are generated in the adhesive layer 60. Thus, the effect of preventing discharge from occurring around the porous plug 50 (adhesive layer 60) is improved.

[0043] Moreover, the adhesive layer 60 preferably does not have bubbles. However, in the case where bubbles are present, the maximum length in the vertical direction of the bubbles is preferably 0.2 mm or less (that is, preferably there are no bubbles with a maximum length in the vertical direction exceeding 0.2 mm). Accordingly, the effect of preventing discharge from occurring around the porous plug 50 (adhesive layer 60) is improved. For example, when the gas flowing through the gas supply path is helium, electrons generated by the ionization of helium are accelerated when plasma is generated, and strike other helium, thereby causing discharge (glow discharge). However, if the maximum length in the vertical direction of the bubbles is 0.2 mm or less, the electrons cannot be sufficiently accelerated within the bubbles, and thus, discharge can be suppressed.

[0044] In addition, by causing the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug configuration hole 24 to be joined together by the adhesive 70, it is possible to relatively easily make the height of the upper surface (reference surface 21c) of the ceramic plate 20 and the height of the upper surface of the porous plug 50 coincide.

[0045] It should be noted that the present invention is not limited by any of the above-described embodiments, and of course, various embodiments can be implemented as long as they fall within the technical scope of the present invention.

[0046] In the above-described embodiment, the porous plug 50 is exemplified as the plug that allows gas flow in the vertical direction, but it is not particularly limited thereto. For example, as this plug, a dense plug having a flow path (e.g., a spiral flow path) that allows gas flow in the vertical direction inside can be used.

[0047] In the above-described embodiment, the height of the lower surface 50b of the porous plug 50 may coincide with the height of the lower surface of the ceramic plate 20 (the lower opening of the plug configuration hole 24), but it may also be higher or lower than the height of the lower surface of the ceramic plate 20. In any case, the height of the upper surface 50a of the porous plug 50 is preferably the same as the height of the upper surface (reference surface 21c) of the ceramic plate 20.

[0048] In the above-described embodiment, a large-diameter portion 34a is provided above the gas hole 34, but it is not particularly limited thereto. For example, the gas hole 34 may be a straight hole having a diameter larger than the diameter of the lower opening of the plug arrangement hole 24. Even in such a case, the through hole 42 of the metal bonding layer 40 and the upper portion of the gas hole 34 are spaces that allow the porous plug 50 to enter.

[0049] In the above-described embodiment, the gas hole 34 that constitutes the gas supply path is provided in the substrate 30, but it is not particularly limited thereto. For example, as in Figure 5 the component 110 for a semiconductor manufacturing apparatus shown, a ring portion 64a that is concentric with the substrate 30 in a plan view, an introduction portion 64b that introduces gas from the back surface of the substrate 30 to the ring portion 64a, and a distribution portion 64c that distributes gas from the ring portion 64a to each porous plug 50 are provided in the substrate 30. Figure 5 In, the same reference numerals are given to the same components as those in the above-described embodiment. The number of the introduction portions 64b is less than the number of the distribution portions 64c and may be, for example, one. Accordingly, the number of gas pipes connected to the substrate 30 can be made less than the number of the porous plugs 50.

[0050] In the above-described embodiment, the electrostatic electrode is exemplified as the electrode 22 built in the ceramic plate 20, but it is not particularly limited thereto. For example, instead of or in addition to the electrode 22, a heater electrode (resistance heating element) may be built in the ceramic plate 20, or an RF electrode may be built in.

[0051] In the above-described embodiment, the ceramic plate 20 and the substrate 30 are joined by the metal bonding layer 40. However, a resin adhesive layer may be used instead of the metal bonding layer 40.

[0052] Examples

[0053] [Experimental Example 1]

[0054] A visual sample simulating the above-described component 10 for a semiconductor manufacturing apparatus was fabricated. Specifically, the ceramic plate 20 and the substrate 30 were made of transparent acrylic resin and bonded together. As the porous plug 50, an alumina porous body with a porosity of 30% was used. The elevation angles α and β of the inner peripheral surface of the plug arrangement hole 24 and the outer peripheral surface of the porous plug 50 were set to 75°. As the adhesive 70, a silicone adhesive with a viscosity of 40,000 cP was used. The adhesive 70 was coated at least once along the circumferential direction of the outer peripheral surface of the porous plug 50, and then the porous plug 50 was inserted into the plug arrangement hole 24. At this time, the porous plug 50 was rotated or moved up and down so that the adhesive 70 spread along the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24. Then, the adhesive 70 was cured, thereby obtaining a visual sample. When observing the adhesive layer 60 of this visual sample with the naked eye, no bubbles were found. When a high-frequency voltage was applied to this visual sample, no discharge occurred in the periphery (adhesive layer 60) of the porous plug 50.

[0055] [Experimental Example 2]

[0056] The elevation angles of the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24 were set to 85°, and a visual sample was fabricated in the same manner as in Experimental Example 1 except for this. When observing the adhesive layer 60 of this visual sample with the naked eye, no bubbles were found. When a high-frequency voltage was applied to this visual sample, no discharge occurred in the periphery (adhesive layer 60) of the porous plug 50.

[0057] [Experimental Example 3]

[0058] The elevation angles of the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24 were set to 65°, and a visual sample was fabricated in the same manner as in Experimental Example 1 except for this. When observing the adhesive layer 60 of this visual sample with the naked eye, no bubbles were found. When a high-frequency voltage was applied to this visual sample, no discharge occurred in the periphery (adhesive layer 60) of the porous plug 50.

[0059] [Experimental Example 4]

[0060] The elevation angles of the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug arrangement hole 24 were set to 55°, and a visual sample was fabricated in the same manner as in Experimental Example 1 except for this. When observing the adhesive layer 60 of this visual sample with the naked eye, there were several bubbles. When these bubbles were investigated in detail, it was found that there were no bubbles with a maximum length in the vertical direction exceeding 0.2 mm. When a high-frequency voltage was applied to this visual sample, no discharge occurred in the periphery (adhesive layer 60) of the porous plug 50. Therefore, it was judged that the bubbles were not of a size that would cause discharge when the wafer W was processed using plasma.

[0061] Industrial Applicability

[0062] The present invention can be used for components used in semiconductor manufacturing apparatuses, such as ceramic heaters, electrostatic chuck heaters, electrostatic chucks, and the like.

[0063] Description of Reference Numerals

[0064] 10 Component for semiconductor manufacturing apparatus, 20 Ceramic plate, 21 Wafer placement surface, 21a Sealing tape, 21b Circular small protrusion, 21c Reference surface, 22 Electrode, 24 Plug arrangement hole, 30 Substrate, 32 Refrigerant flow path, 34 Gas hole, 34a Large-diameter portion, 40 Metal bonding layer, 42 Through hole, 50 Porous plug, 50a Upper surface, 50b Lower surface, 60 Adhesive layer, 70 Adhesive, 90 Metal bonding material, 92 Through hole, 94 Bonded body.

Claims

1. A component for a semiconductor manufacturing apparatus, wherein, Comprising: A ceramic plate having a wafer placement surface on its upper surface; A plug configuration hole that penetrates the ceramic plate in the vertical direction and has a frustum-shaped space with an upper opening area larger than the lower opening area; A frustum-shaped plug that is disposed in the plug configuration hole, allows gas flow in the vertical direction, and has an upper surface area larger than the lower surface area; An adhesive layer provided between the inner peripheral surface of the plug configuration hole and the outer peripheral surface of the plug; A conductive substrate that is joined to the lower surface of the ceramic plate via a joining layer; and A gas supply path that is provided in the substrate and the joining layer and supplies gas to the plug.

2. The component for a semiconductor manufacturing apparatus according to claim 1, wherein: A space allowing the plug to enter is provided at a position in the gas supply path that faces the plug.

3. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The elevation angle of the inner peripheral surface of the plug configuration hole and the elevation angle of the outer peripheral surface of the plug are 55° or more and 85° or less.

4. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The adhesive layer does not have bubbles with a maximum length in the vertical direction exceeding 0.2 mm.

5. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The adhesive layer does not have bubbles.

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