Display device

Abstract

The invention provides a display device. The display device comprises a backlight module and a display panel. The display panel is arranged on the backlight module and comprises two substrates, a sensor and a light shielding element. The sensor is arranged between the two substrates. The light shielding element at least partially surrounds the sensor. The height of the light shielding element is greater than that of the sensor.

Description

[0001] This application is a divisional application of the patent application with Chinese application number 202110234963.8 and invention title "Display Device". The filing date of the original application is March 3, 2021. Technical Field

[0002] The present disclosure relates to an electronic device, and more particularly to a display device. Background Art

[0003] When a sensor (such as a light sensor) is disposed in a display panel, the sensor is susceptible to stray light irradiation, which affects the sensor's sensing of an image. Summary of the Invention

[0004] The present disclosure provides a display device that can reduce the influence of stray light on the sensor.

[0005] According to some embodiments of the present disclosure, a display device includes a backlight module and a display panel. The display panel is disposed on the backlight module and includes two substrates, a sensor, and a light shielding element. The sensor is disposed between the two substrates. The light shielding element at least partially surrounds the sensor. The height of the light shielding element is greater than the height of the sensor.

[0006] According to other embodiments of the present disclosure, a display device includes a backlight module and a display panel. The display panel is disposed on the backlight module and includes two substrates, a sensor, and a light shielding element. The sensor is disposed between the two substrates. A portion of the light shielding element extends between the sensor and the backlight module, and the extension length of the portion of the light shielding element is greater than or equal to the height of the sensor.

[0007] To make the above features and advantages of the present disclosure more obvious and understandable, specific embodiments are hereinafter given and described in detail in conjunction with the accompanying drawings as follows. Brief Description of the Drawings

[0008] Figures 1 to 10 Are partial cross-sectional schematic views of display devices according to multiple embodiments of the present disclosure;

[0009] Figures 11 to 14 Are partial top-down schematic views of display devices according to multiple embodiments of the present disclosure. Detailed Description of the Embodiments

[0010] This disclosure can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that, for the convenience of the reader's understanding and the simplicity of the drawings, only a part of the electronic device / display device is shown in the multiple drawings of this disclosure, and the specific elements in the drawings are not drawn to actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of this disclosure. For example, for clarity, the relative sizes, thicknesses, and positions of each film layer, region, or structure may be reduced or enlarged.

[0011] Throughout this specification and the appended claims, certain terms will be used to refer to specific elements. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as "having" and "including" are open-ended terms and should therefore be interpreted as meaning "including but not limited to...".

[0012] The directional terms mentioned herein, such as "upper", "lower", "front", "rear", "left", "right", etc., are only with reference to the directions in the drawings. Therefore, the directional terms used are for illustration and not for limiting this disclosure. It should be understood that when an element or film layer is said to be disposed "on" another element or film layer or "connected" to another element or film layer, the said element or film layer may be directly on the said other element or film layer or directly connected to the said other element or film layer, or there may be intervening elements or film layers between the two (non-direct case). On the contrary, when an element or film layer is said to be "directly" on another element or film layer or "directly connected" to another element or film layer, there are no intervening elements or film layers between the two.

[0013] The terms "about", "equal to", "equivalent", "the same", "substantially", or "substantially" mentioned herein generally represent within 10% of a given value or range, or represent within 5%, 3%, 2%, 1%, or 0.5% of a given value or range. In addition, the phrase "a given range is from a first value to a second value", "a given range falls within the range from a first value to a second value" means that the said given range includes the first value, the second value, and other values therebetween.

[0014] In some embodiments of this disclosure, terms related to joining and connection, such as "connect", "interconnect", "contact", etc., unless otherwise specifically defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, with other structures disposed between these two structures. Terms related to joining and connection may also include cases where both structures are movable, or both structures are fixed. In addition, the terms "electrically connected" and "coupled" include any means of direct and indirect electrical connection.

[0015] In the following embodiments, the same or similar elements will be denoted by the same or similar reference numerals, and redundant descriptions thereof will be omitted. In addition, as long as the features in different embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily combined and used. Moreover, simple equivalent changes and modifications made according to this specification or claims still fall within the scope covered by this disclosure. In addition, the terms "first", "second", etc. mentioned in this specification or claims are only used to name different elements or distinguish different embodiments or scopes, and do not limit the upper or lower limits of the number of elements, nor are they used to define the manufacturing order or setting order of the elements.

[0016] The electronic device of this disclosure may include a display device, an antenna device, a sensing device, a light-emitting device, or a splicing device, but is not limited thereto. The electronic device may include a bendable or flexible electronic device. The electronic device may, for example, include a liquid crystal layer or a light-emitting diode. The light-emitting diode may, for example, include an organic light-emitting diode (OLED), a mini light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot LED, which may include QLED, QDLED), fluorescence, phosphor, or other suitable materials, or a combination thereof, but is not limited thereto. Hereinafter, the display device will be used as an example of the electronic device to illustrate the content of this disclosure, but this disclosure is not limited thereto.

[0017] The display device of this disclosure is, for example, a non-self-luminous display device, but is not limited thereto. The non-self-luminous display device may include a liquid crystal display device, but is not limited thereto. Hereinafter, the liquid crystal display device will be used as an example of the display device to illustrate the content of this disclosure, but this disclosure is not limited thereto.

[0018] Figures 1 to 10 are partial cross-sectional schematic diagrams of display devices according to multiple embodiments of this disclosure. Figures 11 to 14 are partial top-view schematic diagrams of display devices according to multiple embodiments of this disclosure.

[0019] Please refer to Figure 1 , the display device 1 may include a backlight module 10 and a display panel 12. The backlight module 10 can be used to provide illumination light beams to the display panel 12. For example, the backlight module 10 may include a direct-lit backlight module or a side-lit backlight module, which is not limited herein.

[0020] The display panel 12 is disposed on the backlight module 10 to receive the illumination light beam from the backlight module 10. Taking a liquid crystal display panel as an example, the display panel 12 may include a first substrate structure 120, a second substrate structure 122 disposed on the first substrate structure 120, and a liquid crystal layer 124 disposed between the first substrate structure 120 and the second substrate structure 122.

[0021] The first substrate structure 120 may be an element array substrate structure. Although not shown in Figure 1 , the first substrate structure 120 may include a substrate and circuits, elements (such as switching elements), electrodes, and / or other appropriate layers or elements disposed on the substrate, etc., but not limited thereto.

[0022] The second substrate structure 122 may be a color filter substrate structure. Although not shown in Figure 1 , the second substrate structure 122 may include a substrate and a light-shielding layer, a color filter layer, electrodes, and / or other appropriate layers or elements disposed on the substrate, etc., but not limited thereto. In some embodiments, the color filter layer or the light-shielding layer may be disposed on the substrate in the first substrate structure 120.

[0023] For the reader to easily understand and for the simplicity of the drawings, Figures 2 to 10 only a partial area of both the backlight module and the first substrate structure in the display device is schematically shown. For the description of other structures not shown, please refer to Figure 1 , and will not be repeated hereinafter.

[0024] Please refer to Figure 2 , the display device 1A may include two substrates (such as the substrate 1200 of the first substrate structure 120A and Figure 1 the substrate of the second substrate structure 122), a sensor 1202, and a light-shielding element 1204.

[0025] The two substrates can be used to carry elements and / or film layers. For example, the materials of the two substrates may each include glass, plastic, other appropriate materials, or a combination of the above, but not limited thereto.

[0026] The sensor 1202 may be disposed between the two substrates. The sensor 1202 can be used to receive a light beam. For example, the sensor 1202 can be used to receive the light beam reflected by a finger pressing on the display device 1A for subsequent fingerprint recognition, but not limited thereto. The sensor 1202 may include a photodetector, such as a PIN junction photodiode or a PN junction photodiode, but not limited thereto. In one embodiment, the sensor 1202 may include a P-type semiconductor layer, an N-type semiconductor layer, and a low-doped semiconductor layer, and the low-doped semiconductor layer may be located between the P-type semiconductor layer and the N-type semiconductor layer, but not limited thereto.

[0027] The light shielding element 1204 at least partially surrounds the sensor 1202 to reduce the influence of stray light on the sensor 1202 (for example, reducing the stray light received by the sensor 1202). In some embodiments, the light shielding element 1204 may include a light absorbing element, a light reflecting element, or a combination of the above. In the present embodiment, as Figure 2 shown, the light shielding element 1204 may include a light reflecting element, but is not limited thereto. For example, the lower electrode EL for electrically connecting the sensor 1202 can serve as the light shielding element 1204. By reflecting the stray light incident on the sensor 1202 through the lower electrode EL, the influence of the stray light on the sensor 1202 can be reduced.

[0028] In the architecture where the lower electrode EL serves as the light shielding element 1204, the light shielding element 1204 may include a part P1 and a part P2. The part P1 can surround the sensor 1202, and the part P2 can further extend between the sensor 1202 and the backlight module 10, where the part P2 of the light shielding element 1204 is in contact with the sensor 1202 and is a good electrical conductor. For example, the material of the part P2 may include metal, alloy, other suitable conductors, other suitable light shielding materials, or a combination of the above, but is not limited thereto. The part P1 and / or the part P2 can be a single-layer or multi-layer structure, but is not limited thereto. In some embodiments, the material of the light shielding element 1204 may also include a combination of a transparent conductive material (such as indium tin oxide) and a light shielding material, but is not limited thereto.

[0029] In the present embodiment, as Figure 2 shown, the part P1 and the part P2 are connected to each other. The part P1 and the part P2 can be formed by the same patterning process and can be made of the same material to simplify the process, but is not limited thereto. In other embodiments, the part P1 and the part P2 can be separated from each other, formed by different patterning processes, and / or made of different materials.

[0030] In some embodiments, as Figure 2As shown, the height H1204 of the light-shielding element 1204 may be greater than the height H1202 of the sensor 1202 to block stray light from a higher position. The height H1204 of the light-shielding element 1204 may be defined as the maximum distance in the thickness direction Z of the display device 1A from a certain plane (a plane lower than the light-shielding element 1204 and the sensor 1202, such as the upper surface S1200 of the substrate 1200) in the first substrate structure 120A to the top surface S1204 of the light-shielding element 1204 (for example: the surface of the light-shielding element 1204 farthest from the upper surface S1200). Similarly, the height H1202 of the sensor 1202 may be defined as the maximum distance in the thickness direction Z of the display device 1A from the said plane (such as the upper surface S1200 of the substrate 1200) to the top surface S1202 of the sensor 1202 (for example: the surface of the sensor 1202 farthest from the upper surface S1200). In other embodiments, the maximum distance between the bottom surface and the top surface S1204 of the light-shielding element 1204 may be defined as the height of the light-shielding element 1204, and the maximum distance between the bottom surface of the light-shielding element 1204 and the top surface S1202 of the sensor 1202 may be defined as the height of the sensor 1202, but not limited thereto. The method of making the height H1204 of the light-shielding element 1204 greater than the height H1202 of the sensor 1202 may include forming a recess C in one or more insulating layers (such as the insulating layer 1222) of the display device 1A, and disposing the light-shielding element 1204 in the recess C, wherein a part P2 of the light-shielding element 1204 may be disposed on the bottom of the recess C, and a part P1 of the light-shielding element 1204 may be disposed on the sidewall of the recess C. In addition, the sensor 1202 may be disposed in the recess C and on the light-shielding element 1204, for example, the sensor 1202 may be disposed on the part P2 of the light-shielding element 1204, such that the height H1204 of the light-shielding element 1204 is greater than the height H1202 of the sensor 1202, but not limited thereto. In some embodiments, the insulating layer 1222 may include an organic insulating layer, but not limited thereto.

[0031] According to different requirements, the display device 1A may further include other elements or film layers. Figure 2For example, in addition to the substrate 1200, the sensor 1202, the light shielding element 1204, and the insulating layer 1222, the first substrate structure 120A of the display device 1A may further include a light shielding layer 1206, an insulating layer 1208, a semiconductor layer 1210, a gate insulating layer 1212, a first conductive layer 1214, an insulating layer 1216, a second conductive layer 1218, an insulating layer 1220, an insulating layer 1224, an insulating layer 1226, an insulating layer 1228, an insulating layer 1230, an insulating layer 1232, a first transparent conductive layer 1234, an insulating layer 1236, and a second transparent conductive layer 1238, but not limited thereto. The first substrate structure 120A may add or reduce one or more elements or film layers according to requirements. The above insulating layer may include an organic insulating layer or an inorganic insulating layer. The above insulating layer may be a single-layer or multi-layer structure. In the embodiment of the multi-layer structure, the insulating layer may include a stacked structure of an organic insulating layer and an inorganic insulating layer, but not limited thereto.

[0032] The light shielding layer 1206 may be disposed on the substrate 1200. For example, the material of the light shielding layer 1206 may include a metal, an alloy, a black matrix, other suitable materials (such as a light reflecting material or a light absorbing material), or a combination of the above, but not limited thereto. The light shielding layer 1206 may be a patterned film layer. For example, the light shielding layer 1206 may include a plurality of light shielding patterns P1206 ( Figure 2 only one is schematically shown), but not limited thereto.

[0033] The insulating layer 1208 may be disposed on the light shielding layer 1206 and the substrate 1200. The insulating layer 1208 may be an inorganic insulating layer, but not limited thereto. For example, the material of the insulating layer 1208 may include silicon oxide, silicon nitride, or a combination of the above, but not limited thereto.

[0034] The semiconductor layer 1210 may be disposed on the insulating layer 1208, and the semiconductor layer 1210 may be separated / electrically insulated from the light shielding layer 1206 through the insulating layer 1208. For example, the material of the semiconductor layer 1210 may include polycrystalline silicon, amorphous silicon, metal oxide, or a combination thereof, but not limited thereto. In this embodiment, the semiconductor layer 1210 is, for example, a polycrystalline silicon semiconductor layer, and the semiconductor layer 1210 may include a plurality of semiconductor patterns CH ( Figure 2 only one is schematically shown). The semiconductor pattern CH may include a channel region R1, a low-doped region R21, a low-doped region R22, a source region R3, and a drain region R4, wherein the low-doped region R21 is located between the channel region R1 and the source region R3, and the low-doped region R22 is located between the channel region R1 and the drain region R4. In some embodiments, the first substrate structure 120 may include a plurality of semiconductor layers, such as a silicon semiconductor layer (such as polycrystalline silicon or amorphous silicon) and a metal oxide semiconductor layer. Only one semiconductor layer is schematically shown in the drawing.

[0035] A plurality of semiconductor patterns CH and a plurality of light-shielding layers 1206 may overlap in the thickness direction Z of the display device 1A. Unless otherwise specified, the "overlap" in this disclosure may include complete overlap and partial overlap. By disposing the light-shielding layer 1206 between the backlight module 10 and the semiconductor layer 1210, the light-shielding layer 1206 can shield (e.g., reflect or absorb) the light beam incident on the semiconductor layer 1210, thereby helping to reduce the influence of the light beam from the backlight module 10 on the semiconductor layer 1210.

[0036] The gate insulating layer 1212 may be disposed on the semiconductor layer 1210 and the insulating layer 1208. In one embodiment, the insulating layer 1212 may be an inorganic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1212 may include silicon oxide, silicon nitride, or a combination thereof, but is not limited thereto.

[0037] The first conductive layer 1214 may be disposed on the gate insulating layer 1212, and the first conductive layer 1214 may be separated / electrically insulated from the semiconductor layer 1210 through the gate insulating layer 1212. For example, the material of the first conductive layer 1214 may include metal, alloy, or a combination thereof, but is not limited thereto. The first conductive layer 1214 may be a patterned film layer. For example, the first conductive layer 1214 may include a plurality of gate electrodes GE ( Figure 2 only one is schematically shown) and other lines (such as Figure 11 the plurality of scan lines SL shown), but is not limited thereto. The plurality of gate electrodes GE and the plurality of semiconductor patterns CH overlap in the thickness direction Z of the display device 1A.

[0038] It should be understood that although Figure 2 a top-gate type switching element is schematically shown, the type of the switching element in the first substrate structure 120A may be changed according to requirements and is not limited to Figure 2 what is shown. For example, in other embodiments not shown, the switching element in the first substrate structure 120A may also include a bottom-gate type switching element or a double-gate type switching element. In the architecture of the bottom-gate type switching element or the double-gate type switching element, the light-shielding layer 1206 may be selectively omitted or the area of the light-shielding layer 1206 may be reduced, but is not limited thereto.

[0039] The insulating layer 1216 may be disposed on the first conductive layer 1214 and the gate insulating layer 1212. In one embodiment, the insulating layer 1216 may be an inorganic insulating layer or an organic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1216 may include silicon oxide, silicon nitride, or a combination thereof, but is not limited thereto.

[0040] The second conductive layer 1218 may be disposed on the insulating layer 1216. In one embodiment, the second conductive layer 1218 may be separated / electrically insulated from the first conductive layer 1214 by the insulating layer 1216. For example, the material of the second conductive layer 1218 may include a metal, an alloy, or a combination of the above, but is not limited thereto. The second conductive layer 1218 may be a patterned film layer. For example, the second conductive layer 1218 may include a plurality of source electrodes SE( Figure 2 only one is schematically shown), a plurality of drain electrodes (not shown), and other lines (such as Figure 11 the plurality of data lines DL shown), but is not limited thereto. Each source electrode SE may penetrate through the insulating layer 1216 and the insulating layer 1212 to contact the corresponding source region R3. Similarly, each drain electrode (not shown) may penetrate through the insulating layer 1216 and the insulating layer 1212 to contact the corresponding drain region R4.

[0041] The insulating layer 1220 may be disposed on the second conductive layer 1218 and the insulating layer 1216. In one embodiment, the insulating layer 1220 may be an inorganic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1220 may include silicon oxide, silicon nitride, or a combination of the above, but is not limited thereto. The insulating layer 1220 may have a via hole TH1 that exposes the source electrode SE.

[0042] The insulating layer 1222 may be disposed on the insulating layer 1220. In one embodiment, the insulating layer 1222 may be an organic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1222 may include an acrylic resin, a photosensitive resin, polyimide, a polymer, or a combination of the above, but is not limited thereto. The recess C of the insulating layer 1222 may expose the via hole TH1 of the insulating layer 1220.

[0043] The insulating layer 1224 may be disposed on the insulating layer 1222. The insulating layer 1224 may be an inorganic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1224 may include silicon oxide, silicon nitride, or a combination of the above, but is not limited thereto. The insulating layer 1224 may have a via hole TH2 that exposes the recess C. In one embodiment, the light-shielding element 1204 may be disposed on the insulating layer 1224 and may contact the corresponding source electrode SE through the via hole TH2, the recess C, and / or the via hole TH1.

[0044] The insulating layer 1226 can be disposed on the light-shielding element 1204 and the insulating layer 1224. In one embodiment, the insulating layer 1226 can be an inorganic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1226 can include silicon oxide, silicon nitride, or a combination of the above, but is not limited thereto. The insulating layer 1226 can have an opening A that exposes a partial light-shielding element 1204. The sensor 1202 can be in contact / electrically connected with the light-shielding element 1204 through the opening A.

[0045] The insulating layer 1228 is disposed on the sensor 1202 and the insulating layer 1226. In one embodiment, the insulating layer 1228 can be an organic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1228 can include acrylic resin, photosensitive resin, polyimide, polymer, or a combination of the above, but is not limited thereto.

[0046] The insulating layers 1230 and 1232 can be sequentially disposed on the insulating layer 1228. In one embodiment, the insulating layers 1230 and 1232 can be inorganic insulating layers, but is not limited thereto. For example, the materials of the insulating layers 1230 and 1232 can include silicon oxide, silicon nitride, or a combination of the above, but is not limited thereto.

[0047] The first transparent conductive layer 1234 can be disposed on the insulating layer 1232. For example, the material of the first transparent conductive layer 1234 can include metal oxide (such as indium tin oxide), graphene, or metal mesh, but is not limited thereto. The first transparent conductive layer 1234 can be a patterned film layer. For example, the first transparent conductive layer 1234 can include a plurality of touch elements TP ( Figure 2 only one is schematically shown) and other circuits (not shown, such as a plurality of wires), but is not limited thereto.

[0048] The insulating layer 1236 can be disposed on the first transparent conductive layer 1234 and the insulating layer 1232. In one embodiment, the insulating layer 1236 can be an inorganic insulating layer, but is not limited thereto. For example, the material of the insulating layer 1236 can include silicon oxide, silicon nitride, or a combination of the above, but is not limited thereto.

[0049] The second transparent conductive layer 1238 can be disposed on the insulating layer 1236, and the second transparent conductive layer 1238 can be separated / electrically insulated from the first transparent conductive layer 1234 through the insulating layer 1236. For example, the material of the second transparent conductive layer 1238 can include metal oxide (such as indium tin oxide), graphene, or metal mesh, but is not limited thereto. The second transparent conductive layer 1238 can be a patterned film layer. For example, the second transparent conductive layer 1238 can include a plurality of pixel electrodes PE ( Figure 2 only three are schematically shown) and other circuits (not shown, such as a plurality of wires), but is not limited thereto.

[0050] Please refer to Figure 3 , the main differences between the display device 1B and Figure 2 the display device 1A are described as follows. In the first substrate structure 120B of the display device 1B, in addition to the light-shielding element (such as the lower electrode EL), the light-shielding element 1204B further includes a light-shielding element AB. For example, the material of the light-shielding element AB may include a light-reflecting material or a light-absorbing material (such as a black resin or other light-absorbing materials), but is not limited thereto. The light-shielding element AB can be in contact / connected with the lower electrode EL through the via hole TH3. In one embodiment, the via hole TH3 can penetrate the insulating layer 1236, the insulating layer 1232, the insulating layer 1230, and the insulating layer 1228 and extend into the insulating layer 1226 to expose the partial lower electrode EL, but is not limited thereto.

[0051] Please refer to Figure 4 , the main differences between the display device 1C and Figure 3 the display device 1B are described as follows. In the first substrate structure 120C of the display device 1C, the light-shielding element AB may not be in contact / connected with the lower electrode EL. In addition, the light-shielding element AB can be in contact / connected with the insulating layer 1224 through the via hole TH3'. The via hole TH3' can penetrate the insulating layer 1236, the insulating layer 1232, the insulating layer 1230, the insulating layer 1228, and the insulating layer 1226 to expose the insulating layer 1224.

[0052] Please refer to Figure 5 , the main differences between the display device 1D and Figure 2 the display device 1A are described as follows. In the first substrate structure 120D of the display device 1D, the light-shielding element 1204D may include a portion P2 extending between the sensor 1202 and the backlight module 10 and may not include a portion P1 surrounding the sensor 1202 (refer to Figure 2 ).

[0053] In one embodiment, the portion P2 of the light-shielding element 1204D can be disposed on the insulating layer 1224 and extend into the via hole TH2, the recess C, and the via hole TH1 to contact the corresponding source electrode SE. In addition, the height of the portion P2 of the light-shielding element 1204D (i.e., the height H1204 of the light-shielding element 1204D) can be less than the height H1202 of the sensor 1202, but is not limited thereto.

[0054] In addition, the extension length L1204 of the portion P2 of the light-shielding element 1204D may be greater than or equal to the thickness T1202 of the sensor 1202 to reduce the probability that the light beam emitted from the backlight module 10 directly irradiates the sensor 1202. The extension length L1204 of the portion P2 may be defined as the shortest distance between the edge E1204 of the portion P2 and the edge E1202 of the sensor 1202. The thickness T1202 of the sensor 1202 may be defined as the maximum thickness of the sensor 1202 in the thickness direction Z of the display device 1A.

[0055] Please refer to Figure 6 , the main differences between the display device 1E and Figure 5 the display device 1D are described as follows. In the first substrate structure 120E of the display device 1E, in addition to the light-shielding element (lower electrode EL), the light-shielding element 1204E may further include a light-shielding element AB. For example, the material of the light-shielding element AB may include a light-reflective material or a light-absorbing material (such as black resin or other light-absorbing materials). The light-shielding element AB may be in contact / connected with the lower electrode EL through the via TH3. The via TH3 may penetrate through the insulating layer 1236, the insulating layer 1232, the insulating layer 1230, and the insulating layer 1228 and extend into the insulating layer 1226 to expose the local lower electrode EL. In other embodiments not shown, Figure 6 the via TH3 of Figure 4 may be replaced with

[0056] Please refer to Figure 7 , the main differences between the display device 1F and Figure 5 the display device 1D are described as follows. The first substrate structure 120F of the display device 1F further includes a fourth conductive layer 1240. The material of the fourth conductive layer 1240 may include metal, alloy, or a combination of the above, but is not limited thereto.

[0057] In one embodiment, the fourth conductive layer 1240 may be disposed on the insulating layer 1230 and may be a patterned film layer. For example, the fourth conductive layer 1240 may include a plurality of signal traces W( Figure 7Only two are schematically shown) and other lines (not shown), but not limited thereto. Each signal trace W can contact / connect with the insulating layer 1226 through a via hole TH4 that penetrates the insulating layer 1230 and the insulating layer 1228. In addition, the signal trace W can be separated / electrically insulated from the third conductive layer where the lower electrode EL is located through the insulating layer 1226, but not limited thereto. The signal trace W, the lower electrode EL located under the signal trace W, and the insulating layer 1226 therebetween can form a capacitor. In some embodiments, this capacitor can be used as the storage capacitor of the sensor 1202 to compensate for the problem of insufficient storage capacitance caused by insufficient area. In other embodiments not shown, the via hole TH4 can further extend into the insulating layer 1226 to expose a partial lower electrode EL, and the signal trace W can contact / connect with the lower electrode EL through the via hole TH4 to shield more stray light.

[0058] In this embodiment, the lower electrode EL and the signal trace W can both be light-reflecting elements, and thus can both be used as the light-shielding element 1204F. In the light-shielding element 1204F composed of the lower electrode EL and the signal trace W, the lower electrode EL can be disposed between the sensor 1202 and the backlight module 10 and can be used to block the stray light from the lower part (close to the substrate 1200 side); on the other hand, the signal trace W surrounds the sensor 1202 and can be used to block the stray light from the upper part (close to the pixel electrode PE side).

[0059] Please refer to Figure 8 , the main differences between the display device 1G and Figure 7 the display device 1F are described as follows. In the first substrate structure 120G of the display device 1G, in addition to the light-shielding elements (the lower electrode EL and the signal trace W), the light-shielding element 1204G can further include a light-shielding element AB. For example, the light-shielding element AB is, for example, a light-absorbing element. The material of the light-shielding element AB can include black resin or other light-absorbing materials. The light-shielding element AB can contact / connect with the signal trace W through a via hole TH5. The via hole TH5 can penetrate the insulating layer 1236 and the insulating layer 1232 and extend into the via hole TH4 to expose a partial signal trace W. In Figure 8 the architecture of, the via hole TH4 can also further extend into the insulating layer 1226 to expose a partial lower electrode EL, and the signal trace W can contact / connect with the lower electrode EL through the via hole TH4.

[0060] Please refer to Figure 9 , the display device 1H and Figure 8The main differences of the display device 1G are described as follows. In the first substrate structure 120H of the display device 1H, in addition to the light-shielding elements (the lower electrode EL and the signal trace W), the light-shielding element 1204H may further include the light-shielding element AB. The light-shielding element AB may be in contact / connected with the signal trace W through the via TH6. The via TH6 may penetrate the insulating layer 1236 and extend into the insulating layer 1232 to expose the partial signal trace W. Under Figure 9 the architecture, the via TH4 may further extend into the insulating layer 1226 to expose the partial lower electrode EL, and the signal trace W may be in contact / connected with the lower electrode EL through the via TH4. For example, the material of the light-shielding element AB may include a light-reflecting material or a light-absorbing material (such as black resin or other light-absorbing materials).

[0061] Please refer to Figure 10 , the main differences between the display device 1I and Figure 7 the display device 1F are described as follows. In an embodiment, in the first substrate structure 120I of the display device 1I, the insulating layer 1228' may be disposed only on the sensor 1202 and its surroundings, and the surface of the insulating layer 1228' may, for example, present an arc shape or other suitable shapes, but not limited thereto. In other embodiments, the insulating layer 1228' may also be the same layer as the insulating layer 1230, for example, formed into a structure such as Figure 10 through a deposition process and a lithography etching process, without an interface between the insulating layer 1228' and the insulating layer 1230. The signal trace W may cover the insulating layer 1228' and have an opening AW that exposes the sensor 1202. The size of the opening AW can be determined as needed and is not limited herein. In some embodiments, the maximum width of the opening AW may be equal to or less than the maximum width of the sensor 1202, but not limited thereto. In other embodiments, the maximum width of the opening AW may be greater than the maximum width of the sensor 1202 (please see Figures 11 to 14 subsequent), but not limited thereto. The maximum width of the opening AW may be between 0.6 times and 1.5 times the maximum width of the sensor 1202, such as 0.9 times or 1.2 times, but not limited thereto.

[0062] The signal trace W can be in contact / connected with the lower electrode EL through the via TH7. The via TH7 can penetrate through the insulating layer 1230 and extend into the insulating layer 1226 to expose the local lower electrode EL. For example, in this architecture, since the insulating layer 1228’ is designed to be a hemispherical shape, when forming the via TH7, it is not necessary to consider the thickness of the insulating layer 1228’, but only the thickness of the insulating layer 1230 and part of the insulating layer 1226. Therefore, the size of the via TH7 can be effectively reduced, thereby improving the pixel aperture ratio, but not limited to this. In other embodiments not shown, the via TH7 can also only penetrate through the insulating layer 1230 and expose the local insulating layer 1226, and the signal trace W can be in contact / connected with the insulating layer 1226 through the via TH7.

[0063] In Figure 10 the architecture, the lower electrode EL and the signal trace W can jointly serve as the light shielding element 1204I. In the light shielding element 1204I, the lower electrode EL can be used to block the stray light near the substrate 1200 side; on the other hand, the signal trace W can be used to block the stray light shooting to the side of the sensor 1202 and the stray light coming from the side near the pixel electrode PE.

[0064] For the convenience of readers' understanding and the simplicity of the drawings, Figures 11 to 14 only a partial area of the first substrate structure in the display device (including a plurality of opening areas R and the area where the sensor 1202 is located) is schematically shown. For other structures not shown (such as the switching elements in each pixel, the switching elements electrically connected to the sensor 1202, or other circuits), please refer to the above description and will not be repeated below. The opening area R can correspond to the pixel.

[0065] Please refer to Figures 11 to 14 , the sensor 1202 can be disposed between two adjacent scan lines SL, but not limited to this. In addition to the lower electrode EL and the signal trace W, the light shielding element can further include a light shielding pattern W’. The signal trace W and the light shielding pattern W’ can belong to the fourth conductive layer 1240, but not limited to this. In some embodiments, as Figure 11 and Figure 12 shown, the light shielding pattern W’ can surround the sensor 1202. In other embodiments, as Figure 13 and Figure 14 shown, the light shielding pattern W’ can be disposed on the opposite side of the sensor 1202 facing the plurality of opening areas R to reduce the influence of the stray light from the plurality of opening areas R on the sensor 1202. In some embodiments, as Figure 11 and Figure 13 shown, the signal trace W and the light shielding pattern W’ can be connected to each other. In other embodiments, as Figure 12 and Figure 14 shown, the signal trace W and the light shielding pattern W’ can be separated from each other.

[0066] In summary, in the embodiments of the present disclosure, a light shielding element is used to block stray light, thereby reducing the influence of stray light on the sensor. In some embodiments, the lower electrode of the sensor can be used as the light shielding element. In some embodiments, a light absorption element can be provided to block stray light from a high place.

[0067] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

[0068] Although the embodiments of the present disclosure and their advantages have been disclosed as above, it should be understood that any person skilled in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure, and the features between the embodiments can be arbitrarily mixed and replaced to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufactures, compositions of matter, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art can understand the processes, machines, manufactures, compositions of matter, devices, methods and steps developed currently or in the future from the disclosure of the present disclosure, as long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to the present disclosure. Therefore, the protection scope of the present disclosure includes the above processes, machines, manufactures, compositions of matter, devices, methods and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the present disclosure also includes the replacement, modification, combination, and / or recombination of the features in each claim and embodiment. The protection scope of the present disclosure shall be defined by the appended claims.

Claims

1. A display device, characterized in that, Comprising: A substrate; A sensor disposed on the substrate; A light-shielding element disposed on the sensor, wherein at least a part of the light-shielding element has an opening, and the opening exposes a part of the light-shielding element; A first insulating layer disposed between the light-shielding element and the sensor, and the first insulating layer has an arcuate surface; A second insulating layer disposed on the light-shielding element; And A pixel electrode disposed on the second insulating layer.

2. The display device according to claim 1, wherein Further comprising: A third insulating layer disposed between the light-shielding element and the first insulating layer, and the third insulating layer has an arcuate surface.

3. The display device according to claim 2, wherein The thickness of the third insulating layer is different from the thickness of the first insulating layer.

4. The display device according to claim 1, wherein The sensor has a first width in a direction, and the total width of the light-shielding element in the direction is greater than the first width.

5. The display device according to claim 1, characterized in that, Further comprising: A touch electrode disposed on the second insulating layer.

6. The display device according to claim 1, wherein, The sensor has a first width in a direction, the opening has a second width, and the second width is less than the first width.

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